JP5571410B2 - 特性劣化防止方法 - Google Patents
特性劣化防止方法 Download PDFInfo
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- JP5571410B2 JP5571410B2 JP2010037098A JP2010037098A JP5571410B2 JP 5571410 B2 JP5571410 B2 JP 5571410B2 JP 2010037098 A JP2010037098 A JP 2010037098A JP 2010037098 A JP2010037098 A JP 2010037098A JP 5571410 B2 JP5571410 B2 JP 5571410B2
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- oxide film
- superconductor
- reaction chamber
- precursor
- atomic layer
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Description
図4に示すような超伝導共振器を超伝導材料であるニオブを用いてサファイア基板上に作製し、本特性劣化防止方法を施した超伝導共振器とそのままのもの、つまり、ニオブ表面にニオブ酸化膜が存在する超伝導共振器の特性の温度依存性を測定した。
11…基板
12…超伝導体
13,13A…酸化膜
15…自然酸化膜
100…原子層堆積装置
101…キャリアガス
102,103…パルシングバルブ
104…反応チャンバ
105…ドライポンプ
106…配管
20…前駆体
30…酸化剤
40…超伝導共振器
41…インダクタ
42…キャパシタンス
Claims (1)
- 超伝導体であるニオブの表面に原子層堆積法を用いてアルミナの酸化膜を形成する特性劣化防止方法であって、
150℃以上250℃以下の基板温度で、前記超伝導体を格納した反応チャンバ内にキャリアガスに乗せて前駆体としてのトリメチルアルミニウムと酸化剤としての水を交互に供給するステップを有し、
前記前駆体を供給するステップの後、及び前記酸化剤を供給するステップの後に、前記反応チャンバ内に前記キャリアガスのみを供給することを特徴とする特性劣化防止方法。
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JP2010037098A JP5571410B2 (ja) | 2010-02-23 | 2010-02-23 | 特性劣化防止方法 |
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JP2010037098A JP5571410B2 (ja) | 2010-02-23 | 2010-02-23 | 特性劣化防止方法 |
Publications (2)
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JP2011176000A JP2011176000A (ja) | 2011-09-08 |
JP5571410B2 true JP5571410B2 (ja) | 2014-08-13 |
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JP2010037098A Expired - Fee Related JP5571410B2 (ja) | 2010-02-23 | 2010-02-23 | 特性劣化防止方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7059810B2 (ja) * | 2018-05-30 | 2022-04-26 | 株式会社デンソー | 表面被覆部材及びその製造方法 |
CN113964265A (zh) * | 2021-09-30 | 2022-01-21 | 复旦大学 | 约瑟夫森结的制备方法及半导体工艺集成系统 |
CN115835768B (zh) * | 2023-02-10 | 2023-05-30 | 材料科学姑苏实验室 | 一种超导量子芯片制备用保护层及超导量子芯片 |
Family Cites Families (2)
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JPS61278181A (ja) * | 1985-06-03 | 1986-12-09 | Agency Of Ind Science & Technol | ジヨゼフソン素子の作成方法 |
KR100924055B1 (ko) * | 2005-02-17 | 2009-10-27 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 디바이스의 제조 방법 및 기판 처리 장치 |
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