JP5558673B2 - Heat treatment equipment - Google Patents

Description

  The present invention relates to a heat treatment apparatus for heat-treating a semiconductor wafer, a glass substrate for a liquid crystal display device or the like (hereinafter simply referred to as “substrate”), particularly a heat treatment apparatus for heat-treating the substrate. The present invention relates to a heat treatment apparatus for heating.

  Conventionally, a lamp annealing apparatus using a halogen lamp has been generally used in an ion activation process of a substrate after ion implantation. In such a lamp annealing apparatus, ion activation of the substrate is performed by heating (annealing) the substrate to a temperature of about 1000 ° C. to 1100 ° C., for example. In such a heat treatment apparatus, the temperature of the substrate is raised at a rate of several hundred degrees per second by using the energy of light irradiated from the halogen lamp.

  On the other hand, in recent years, as semiconductor devices have been highly integrated, it is desired to reduce the junction depth as the gate length becomes shorter. However, even when ion activation of the substrate is performed using the above-mentioned lamp annealing apparatus that heats the substrate at a rate of several hundred degrees per second, ions such as boron and phosphorus implanted into the substrate are diffused deeply by heat. It has been found that a phenomenon occurs. When such a phenomenon occurs, there is a concern that the junction depth becomes deeper than required, which hinders good device formation.

  Therefore, a technique has been proposed in which only the surface of the substrate into which ions are implanted is heated in an extremely short time (several milliseconds or less) by irradiating the surface of the substrate with flash light using a xenon flash lamp or the like. Yes. The radiation spectral distribution of a xenon flash lamp ranges from the ultraviolet region to the near infrared region, has a shorter wavelength than the conventional halogen lamp, and almost coincides with the fundamental absorption band of the silicon substrate. Therefore, when the substrate is irradiated with flash light from the xenon flash lamp, the substrate can be rapidly heated with little transmitted light. It has also been found that if the flash irradiation is performed for a very short time of several milliseconds or less, only the vicinity of the surface of the substrate can be selectively heated. For this reason, if the temperature is raised for a very short time by a xenon flash lamp, only the ion activation can be performed without diffusing ions deeply. A configuration example of a heat treatment apparatus using such a xenon flash lamp is described in Patent Document 1, for example.

JP 2004-140318 A

  By the way, in the heat treatment apparatus, it is desirable that the state of the substrate carried into the apparatus can be grasped without opening the apparatus, and a technique capable of realizing this is required.

  For example, in a heating mode in which enormous heat energy is instantaneously applied to a substrate such as a xenon flash lamp, the substrate may be cracked by the thermal stress. If a substrate breaks in the equipment, it must be detected quickly and dealt with appropriately, but if it is confirmed that the board has been broken only after opening the equipment, take prompt action. It cannot be taken, and safety is not enough. Therefore, there is a need for a technique that can detect cracks in a substrate carried into the apparatus without opening the apparatus.

  In addition, for example, a recipe for heat treatment to be performed on the substrate (a heat treatment process sequence and control parameters of each component related to the heat treatment) may be changed according to the surface state of the substrate to be processed. Therefore, in order to select a recipe correctly, a technique capable of determining the surface state of the substrate carried into the apparatus is required.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of grasping the state of a substrate carried into the apparatus without opening the apparatus.

The invention of claim 1 is a heat treatment apparatus for heating a substrate by irradiating the substrate with light, the surface of the substrate being placed at a specified surface position, and the center being at a specified center position. Holding means for holding the substrate, one or more light irradiating means for irradiating light toward the specified surface position from a position separated by a predetermined distance from the substrate held by the holding means, and toward the specified surface position Detection light emitting means for making the detection light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) and light detection means, and the detection light emitted from the detection light emitting means is the prescribed surface. When reflected at a position, the reflected light detecting means arranged on the path along which the reflected light travels and the state of the substrate carried into the apparatus are determined based on the detection result by the reflected light detecting means. A state determination means The state determination unit, the substrate existence determining means for determining whether the substrate is held in said holding means, Ru comprising a.

Invention of Claim 2 is the heat processing apparatus of Claim 1 , Comprising: The said substrate presence determination means determines whether the board | substrate is hold | maintained at the said holding means before and after performing the heat processing with respect to the said board | substrate. To do.

The invention according to claim 3 is the heat treatment apparatus according to claim 1 or 2 , wherein the state determination unit determines whether the substrate held by the holding unit is warped, Is provided.

According to a fourth aspect of the present invention, there is provided a heat treatment apparatus for heating a substrate by irradiating the substrate with light, wherein the surface of the substrate is placed at a specified surface position and the center thereof is set at a specified center position. Holding means for holding the substrate, one or more light irradiating means for irradiating light toward the specified surface position from a position separated by a predetermined distance from the substrate held by the holding means, and toward the specified surface position Detection light emitting means for making the detection light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) and light detection means, and the detection light emitted from the detection light emitting means is the prescribed surface. When reflected at a position, the reflected light detecting means arranged on the path along which the reflected light travels and the state of the substrate carried into the apparatus are determined based on the detection result by the reflected light detecting means. A state determination means The state determination unit, on the basis of the detection result of the reflected light detecting means, and the reflectance calculating means for calculating the reflectance of the specified surface position, when the substrate is held in said holding means, said reflecting A positional deviation detecting means for determining whether or not a positional deviation in the circumferential direction has occurred on the substrate based on the rate;
Further, the invention according to claim 5 is the heat treatment apparatus according to claim 4, wherein the positional deviation detection means holds the reflectance calculated by the reflectance calculation means in the holding means. The amount of deviation is calculated from the reflectance obtained when the substrate is not displaced in the circumferential direction.When the calculated deviation exceeds a predetermined allowable range, the position deviation is calculated. Determine that it has occurred.

  Invention of Claim 6 is the heat processing apparatus in any one of Claim 1-5, Comprising: The said state determination means calculates | requires the reflectance of the said prescribed | regulated surface position based on the detection result by the said reflected light detection means. A reflectance calculating means for calculating; and a surface state determining means for determining a surface state of the substrate based on the reflectance when the substrate is held by the holding means.

The invention of claim 7 is a heat treatment apparatus according to claim 6, according to a determination result by the surface condition determining means selects a processing parameter according to the pressure heat treatment on the substrate, the selected processing parameters Control means for controlling each of the one or more light irradiation means based on

  Invention of Claim 8 is the heat processing apparatus in any one of Claim 1-7, Comprising: The said detection light emission means is a position which shifted | deviated from the said regulation center position on the said regulation surface position by predetermined distance. The detection light is incident on.

  The invention of claim 9 is the heat treatment apparatus according to any one of claims 1 to 8, wherein an irradiation region of the detection light on the prescribed surface position by the detection light emitting means is formed on the substrate. This area is larger than the size of the IC chip.

The invention of claim 10 is a heat treatment apparatus for heating a substrate by irradiating the substrate with light, the surface of the substrate being placed at a specified surface position, and the center being at a specified center position. Holding means for holding the substrate, one or more light irradiating means for irradiating light toward the specified surface position from a position separated by a predetermined distance from the substrate held by the holding means, and toward the specified surface position Detection light emitting means for making the detection light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) and light detection means, and the detection light emitted from the detection light emitting means is the prescribed surface. When the light travels straight through the position, the transmitted light detecting means arranged on the path along which the transmitted light travels and the state of the substrate carried into the apparatus are determined based on the detection result by the transmitted light detecting means. State determination means to Wherein the state determination means, the substrate existence determining means for determining whether the substrate is held in said holding means, Ru comprising a.

The invention according to claim 11 is the heat treatment apparatus according to claim 10 , wherein the substrate presence / absence determination unit determines whether or not the substrate is held by the holding unit before and after performing the heat treatment on the substrate. To do.

The invention of claim 12 is a heat treatment apparatus for heating a substrate by irradiating the substrate with light, the surface of the substrate being placed at a specified surface position, and the center being at a specified center position. Holding means for holding the substrate, and at least one light for irradiating heating light for heating the substrate from a position separated from the substrate held by the holding unit by a predetermined distance toward the specified surface position An irradiating means and a light detecting means, and when the heating light emitted from the predetermined light irradiating means among the one or more light irradiating means passes straight through the specified surface position, the transmitted light is Transmitted light detecting means arranged on the traveling path, and state determining means for determining the state of the substrate carried into the apparatus based on the detection result by the transmitted light detecting means.

A thirteenth aspect of the present invention is the heat treatment apparatus according to the twelfth aspect , wherein the state determination unit includes a substrate presence / absence determination unit that determines whether or not a substrate is held by the holding unit.

The invention according to claim 14 is the heat treatment apparatus according to claim 13 , wherein the substrate presence / absence determining means determines whether or not the substrate is held by the holding means before and after performing the heat treatment on the substrate. To do.

A fifteenth aspect of the present invention is the heat treatment apparatus according to any one of the first to fourteenth aspects, wherein one of the one or more light irradiation means includes a flash lamp that irradiates flash light.

A sixteenth aspect of the invention is the heat treatment apparatus according to any one of the first to fifteenth aspects, wherein at least one of the one or more light irradiation means includes a halogen lamp.

According to the first, fourth, tenth and twelfth aspects of the present invention, it is possible to detect the light irradiated toward the specified surface position and determine the state of the substrate carried into the apparatus based on the detection result. Therefore, the state of the substrate in the apparatus can be grasped without opening the apparatus.

According to the inventions of claims 1 , 10 , and 13 , when a substrate that should be held by the holding means does not exist on the holding means for some reason, it can be detected without opening the apparatus. it can.

According to the inventions of claims 2 , 11 , and 14 , when the substrate is cracked in the heat treatment, it can be quickly detected without opening the apparatus.

According to the invention of claim 3 , when the substrate held by the holding means is warped, it can be detected without opening the apparatus.

According to the fourth aspect of the present invention, when the substrate held by the holding means is displaced in the circumferential direction, it can be detected without opening the apparatus.

  According to the invention of claim 6, the surface state of the substrate held by the holding means can be grasped without opening the apparatus.

According to the seventh aspect of the present invention, since the light irradiation means is controlled based on the processing parameter selected according to the determination result by the surface state determination means, the heat treatment suitable for the surface state of the substrate can be performed.

  According to the eighth aspect of the invention, the detection light is incident on a position shifted from the specified center position by a predetermined distance (that is, a position shifted from the center of the substrate), so that the state determination means correctly determines the state of the substrate. Can do.

  According to the ninth aspect of the invention, since the detection light irradiation region is a region larger than the size of the IC chip formed on the substrate, the state determination means can correctly determine the state of the substrate.

  A heat treatment apparatus according to an embodiment of the present invention will be described with reference to the drawings. The heat treatment apparatus according to the embodiment of the present invention is a flash lamp annealing apparatus that heats a substantially circular substrate W by irradiating flash light (flash light).

<1. Overall configuration of heat treatment equipment>
First, an overall configuration of a heat treatment apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a side sectional view showing the configuration of the heat treatment apparatus 100. 2 (a) and 2 (b) are longitudinal sectional views of the heat treatment apparatus 100 as seen from the directions of arrows Q1 and Q2 in FIG. 1, respectively.

  The heat treatment apparatus 100 includes a reflector 1 that is formed in a hexagonal cylindrical shape by six reflectors 11. Each reflector 11 is formed of a member having a sufficiently high reflectance (for example, aluminum). Alternatively, the inner surface is coated with a coating that increases reflectivity (eg, a gold non-diffusive coating). A part of the light beams emitted from the light irradiation units 3 and 4 described later are reflected by the inner surface of the reflecting plate 11 and enter the substrate W held by the holding unit 2 described later. As a result, the light energy generated from the light irradiation units 3 and 4 is used for heat treatment of the substrate W without waste.

  The heat treatment apparatus 100 also includes a holding unit 2 that holds the substrate W horizontally at a predetermined position inside the cylinder of the reflector 1 (hereinafter referred to as “specified position P”). More specifically, the holding unit 2 is configured such that the upper surface area of the substrate W is a predetermined area on a predetermined plane (in this embodiment, a horizontal plane) (more specifically, its shape is to be processed). It is held so as to coincide with a region congruent with the upper surface region of the substrate W (hereinafter referred to as “specified surface position Ps”). The geometric center of the specified surface position Ps is hereinafter referred to as “specified center position Po”.

  That is, the substrate W properly held by the holding unit 2 has an upper surface area that matches the specified surface position Ps and a geometric center of the upper surface area that matches the specified center position Po inside the cylinder of the reflector 1. Held in such a position and posture. In other words, the specified surface position Ps is a region where the upper surface region of the substrate W is placed when the substrate W is properly held by the holding unit 2. The specified center position Po is a three-dimensional position where the geometric center of the upper surface region of the substrate W is set.

  The holding unit 2 is a ring-shaped member having a diameter slightly larger than the diameter of the substrate W, and a plurality of (for example, four) support members 21 that support the back surface of the substrate W with dots are formed on the inner end surface thereof. Has been. The substrate W held by the holding unit 2 is supported from the back side by the plurality of support members 21.

  Further, the heat treatment apparatus 100 includes two light irradiation units 3 and 4 that heat the substrate W by irradiating the substrate W held by the holding unit 2 with light.

  The first light irradiation unit (first light irradiation unit 3) irradiates light toward the substrate W from a position below the substrate W held by the holding unit 2 and separated from the substrate W by 100 mm or more. . Then, the substrate W is heated to a predetermined preheating temperature (for example, 600 degrees) by the light energy. The first light irradiation unit 3 includes a plurality of halogen lamps 31 and a reflector 32. The plurality of halogen lamps 31 are rod-shaped lamps each having a long cylindrical shape, and are arranged in a plane so that their longitudinal directions are parallel to each other. The reflector 32 is provided below the plurality of halogen lamps 31 so as to cover all of them, and the surface thereof is roughened by blasting to exhibit a satin pattern.

  The halogen lamp 31 is a filament-type light source that emits light by making the filament incandescent by energizing the filament disposed inside the glass tube. Inside the glass tube, a small amount of a halogen element (iodine, bromine, etc.) introduced into an inert gas such as nitrogen or argon is enclosed. By introducing a halogen element, it is possible to set the filament temperature to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp 31 has a feature that it has a longer life than a normal incandescent bulb and can continuously radiate strong light.

  The second light irradiation unit (second light irradiation unit 4) is located on the substrate W (more specifically, the first light irradiation unit 4) from a position above the substrate W held by the holding unit 2 and separated from the substrate W by 100 mm or more. A flash is irradiated toward the substrate W) preliminarily heated by the one-light irradiation unit 3. Then, the surface of the substrate W is heated in a short time by the light energy. The second light irradiation unit 4 includes a plurality of (for example, 30) xenon flash lamps (hereinafter simply referred to as “flash lamps”) 41 and a reflector 42. The plurality of flash lamps 41 are rod-shaped lamps each having a long cylindrical shape, and are arranged in a plane so that the longitudinal directions thereof are parallel to each other. The reflector 42 is provided above the plurality of flash lamps 41 so as to cover all of them, and the surface thereof is roughened by blasting to exhibit a satin pattern.

  The xenon flash lamp 41 includes a glass tube in which xenon gas is sealed and an anode and a cathode connected to a capacitor at both ends thereof, a trigger electrode wound on the outer peripheral surface of the glass tube, Is provided. Since xenon gas is an electrical insulator, electricity does not flow into the glass tube under normal conditions. However, if the insulation is broken by applying a high voltage to the trigger electrode, the electricity stored in the capacitor instantaneously flows into the glass tube, and the xenon gas is heated by Joule heat at that time, and light is emitted. . In this xenon flash lamp 41, the electrostatic energy stored in advance is converted into an extremely short light pulse of 0.1 millisecond to 10 millisecond. It has the feature that it can.

  In addition, between the light irradiation parts 3 and 4 and the holding | maintenance part 2, the atmosphere interruption member for putting each of the light irradiation parts 3 and 4 and the board | substrate W hold | maintained at the holding | maintenance part 2 in the isolate | separated space is provided. It may be provided. However, this atmosphere blocking member needs to be formed using a member that transmits light (for example, quartz). By providing the atmosphere blocking member, it is possible to prevent the substrate W held on the holding unit 2 from being contaminated by particles generated in the light irradiation units 3 and 4.

  Further, the heat treatment apparatus 100 includes a hexagonal cylindrical chamber 5 that covers the reflector 1. The chamber 5 includes a hexagonal cylindrical chamber side portion 51 that surrounds the reflector 1, a chamber lid portion 52 that covers the upper portion of the chamber side portion 51, and a chamber bottom portion 53 that covers the lower portion of the chamber side portion 51. . A transfer opening 511 for carrying in and out the substrate W is formed in the chamber side portion 51. The transfer opening 511 can be opened and closed by a gate valve 513 that rotates about a shaft 512. The transport opening 511 is also formed so as to penetrate the side wall surface of the reflector 1, and when the gate valve 513 is placed in the open position (the phantom line position in FIG. 1), the reflector 1 passes through the transport opening 511. The substrate W can be carried in and out of the cylinder (arrow AR5). On the other hand, when the gate valve 513 is placed in the closed position (solid line position in FIG. 1), the inside of the chamber 5 is set as a sealed space.

  Further, the heat treatment apparatus 100 includes a substrate state determination unit 6 for determining the state of the substrate W in the apparatus. The configuration of the substrate state determination unit 6 will be described later.

  In addition, the heat treatment apparatus 100 includes a control unit 91 that controls each of the above components, an operation unit 92 that is a user interface, and a display unit 93.

  The control unit 91 controls control parameters (for example, the first light irradiation unit) (for example, the first light irradiation unit 3, the second light irradiation unit 4, and the like). And a storage device (not shown) that stores a program describing each output value of the irradiation unit 3 and the second light irradiation unit 4). However, each of the plurality of heat treatment recipes corresponds to each of various surface states of the substrate W to be processed (for example, a recipe for a substrate (bare substrate) on which no pattern is formed on the surface, and a pattern is formed on the surface. A recipe for a substrate (device substrate), a recipe for a substrate having an antireflection film formed on the surface, and the like.

  The control unit 91 selects and reads out an appropriate heat treatment recipe from the storage device based on a determination result (particularly, a determination result by the surface state determination unit 637) of the substrate state determination unit 6 described later, and responds to the read heat treatment recipe. The respective components included in the heat treatment apparatus 100 are controlled. In particular, the outputs of the first light irradiation unit 3 and the second light irradiation unit 4 are adjusted according to the heat treatment recipe.

  The plurality of heat treatment recipes may be recorded on a predetermined recording medium, or may be directly input from the operator via the operation unit 92. In the former case, the control unit 91 reads the heat treatment recipe recorded on the recording medium via the recording medium reader.

  The operation unit 92 and the display unit 93 are arranged outside the chamber 5 and receive various instructions from the user outside the chamber 5. The control unit 91 controls each component of the heat treatment apparatus 100 based on various instructions input from the operation unit 92 and the display unit 93.

<2. Substrate state determination unit 6>
<2-1. Constitution>
The configuration of the substrate state determination unit 6 will be described with reference to FIGS. 1, 2, and 3. FIG. 3 is a diagram schematically illustrating the relationship among the components of the substrate state determination unit 6. The substrate state determination unit 6 includes an emission unit 61, a detection unit 62, and a state determination processing unit 63.

[Outgoing part 61]
The emission unit 61 is a light source that emits light for detecting the state of the substrate W. The emission part 61 is disposed on the inner wall surface of the chamber side part 51 so as to penetrate the reflector 1 (that is, the light emission port is located inside the cylinder of the reflector 1). Various light sources can be used as the emitting unit 61, and it is particularly preferable to use a light source having excellent straightness (for example, a laser light source or an LED).

  The emitting unit 61 makes light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) toward the specified surface position Ps. However, the emitting unit 61 causes the detection light to enter at a position shifted by a predetermined distance from the specified center position Po. By making the detection light incident at a position shifted from the prescribed center position Po, an accurate determination result can be obtained in the determination process in the state determination processing unit 63 described later.

  In addition, a range in which the emitting unit 61 irradiates the specified surface position Ps (that is, an irradiation region at the specified surface position Ps) Pt is a region larger than the size of the IC chip formed on the substrate W to be processed. By setting the irradiation region Pt at the prescribed surface position Ps to a region larger than the size of the IC chip, an accurate determination result can be obtained in the determination processing in the state determination processing unit 63 described later.

[Detector 62]
The detection unit 62 is a light detection unit, and includes, for example, a photon integration type photodetector such as a photodiode or a CCD (charge-coupled device). When the light (incident light L0) emitted from the emission unit 61 and incident on the specified surface position Ps is reflected at the specified surface position Ps, the detection unit 62 travels the reflected light (reflected light L1). Placed on top.

[State determination processing unit 63]
The state determination processing unit 63 is a processing unit that executes predetermined determination processing (that is, processing for determining the state of the substrate in the apparatus based on the detection result of the detection unit 62), and is realized by the control unit 91. The The state determination processing unit 63 may be realized using a dedicated hardware circuit, or a program stored in a storage device (not shown) (or a program acquired by reading a program stored in a recording medium). May be realized.

  The state determination processing unit 63 includes an incident light intensity acquisition unit 631, a reflected light intensity acquisition unit 632, a reflectance calculation unit 633, a presence / absence detection unit 634, a warp detection unit 635, a misalignment detection unit 636, and a surface state determination unit 637. Is provided.

  The incident light intensity acquisition unit 631 acquires from the emission unit 61 the intensity of detection light emitted from the emission unit 61 and incident on the specified surface position Ps (that is, the intensity of the incident light L0) D0.

  The reflected light intensity acquisition unit 632 acquires the intensity of the light detected by the detection unit 62 (that is, the intensity of the light reflected at the specified surface position Ps (reflected light L1)) D1 from the detection unit 62.

  The reflectance calculation unit 633 reflects the reflectance R (R) of the specified surface position Ps based on the incident light intensity D0 acquired by the incident light intensity acquisition unit 631 and the reflected light intensity D1 acquired by the reflected light intensity acquisition unit 632. = D1 / D0).

  The processing units of the presence / absence detection unit 634, the warp detection unit 635, the positional deviation detection unit 636, and the surface state determination unit 637 are based on the reflectance R calculated by the reflectance calculation unit 633, and are the substrates in the heat treatment apparatus 100. Processing for determining the state of W is performed. Specific contents of processing executed in each processing unit will be described with reference to FIGS.

[A. Presence / absence detection unit 634]
The presence / absence detection unit 634 determines whether or not the substrate W exists at the specified position P (that is, whether or not the substrate W is held by the holding unit 2).

  As shown in FIG. 1, when the incident light L0 emitted from the emission unit 61 and incident on the specified surface position Ps is reflected at the specified surface position Ps, the detection unit 62 travels the reflected light L1. Is placed on top. When the reflecting surface exists at the prescribed surface position Ps (that is, when the substrate W exists at the prescribed position P), the incident light L0 is reflected according to the reflectance of the substrate surface that is the reflecting surface, and the reflected light L1 is reflected. It is formed. Therefore, in this case, the reflectance R is a value other than “0%”. On the other hand, when the reflecting surface does not exist at the specified surface position Ps (that is, when the substrate W does not exist at the specified position P), the incident light L0 goes straight without being reflected, and the reflected light L1 is not formed. Therefore, in this case, the value of the reflectance R is “0%”. Thus, it can be determined from the value of the reflectance R whether or not the substrate W exists at the specified position P.

  Hereinafter, the determination process executed by the presence / absence detection unit 634 will be described in detail with reference to FIG. FIG. 5 is a diagram illustrating a flow of determination processing executed by the presence / absence detection unit 634.

  First, the presence / absence detection unit 634 acquires the reflectance R of the specified surface position Ps calculated by the reflectance calculation unit 633 (step S11). Subsequently, it is determined whether or not the reflectance R acquired in step S11 is larger than a predetermined value (presence / absence detection threshold E634) (step S12). If it is determined that the reflectance R is greater than the presence / absence detection threshold value E634, it is determined that the substrate W exists at the specified position P (step S13). On the other hand, when it is determined that the reflectance R is equal to or less than the presence / absence detection threshold value E634, it is determined that the substrate W does not exist at the specified position P (step S14).

  Note that a sufficiently small value is desirable as a specific value of the presence / absence detection threshold value E634. As shown in FIG. 4, according to the inventor of the present invention, it has been confirmed that the reflectance R when the substrate W does not exist at the specified position P is “0%”. Therefore, for example, “0” can be used as the value of the presence / absence detection threshold value E634. However, FIG. 4 is a diagram showing the relationship between the reflectance R of the substrate surface and the state of the substrate W, and the numerical data in the drawing is obtained by the inventor of the present invention. In addition, the numerical value of the reflectance R (%) shown in FIG. 4 is standardized by setting the reflectance R at room temperature of the bare substrate to “100%”.

[B. Warpage detection unit 635]
The substrate W that has been subjected to the heat treatment may warp like a sword in the process of raising the temperature. In particular, a warp called “Warpage” may occur after the flash heat treatment described later. The warpage detection unit 635 determines whether or not such warpage has occurred in the substrate W held by the holding unit 2.

  As shown in FIG. 1, when a reflecting surface parallel to the specified surface position Ps exists (that is, when the substrate W placed at the specified position P is not warped), the reflected light L1 is: The almost entire amount is detected by the detection unit 62. On the other hand, when there is a reflecting surface that is not parallel to the specified surface position Ps (that is, when the substrate W placed at the specified position P is warped), the traveling direction of the reflected light is shifted. Only a part of the reflected light (abnormally reflected light L2) is detected by the detection unit 62. That is, when the substrate W placed at the specified position P is warped, the value of the reflectance R is smaller than when the warp is not generated. As described above, the warpage occurring in the substrate W can be detected from the value of the reflectance R.

  Hereinafter, the determination process executed by the warp detection unit 635 will be specifically described with reference to FIG. FIG. 6 is a diagram illustrating a flow of determination processing executed by the warp detection unit 635.

  The warpage detection unit 635 first acquires the reflectance R of the specified surface position Ps calculated by the reflectance calculation unit 633 (step S21). Subsequently, it is determined whether or not the reflectance R acquired in step S21 is greater than a predetermined value (warpage detection threshold E635) (step S22). If it is determined that the reflectance R is greater than the warpage detection threshold E635, it is determined that no warpage has occurred in the substrate W (step S23). On the other hand, when it is determined that the reflectance R is equal to or less than the warpage detection threshold E635, it is determined that the substrate W is warped (step S24).

  As shown in FIG. 4, according to the inventor of the present invention, when the reflectance R of the bare substrate is normalized as “100%”, the reflectance R of the substrate W in which the warp has occurred is “10 to 10”. It has been confirmed that the value is about "50 (%)". On the other hand, as will be described later, it has been confirmed that the reflectance R of the substrate W on which the antireflection film is formed exhibits a value of about “68 to 73 (%)”. Therefore, a value of “50 to 68” is appropriate as the value of the warp detection threshold E635.

[C. Misalignment detection unit 636]
The to-be-processed substrate W hold | maintained by the holding | maintenance part 2 in the regulation position P is positioned appropriately also about the position of the circumferential direction using a reference notch etc. However, there is a case where the substrate W rotates due to some factor and causes a positional shift in the circumferential direction. The position deviation detection unit 636 determines whether or not such a position deviation (position deviation in the circumferential direction) has occurred in the substrate W held by the holding unit 2.

  The reflectance R of the substrate W having a pattern formed on the surface changes according to the incident direction of incident light. That is, the reflectance R obtained when the substrate W is arranged at an appropriate position in the circumferential direction by a reference notch or the like and when the substrate W is rotated from the appropriate position to cause a displacement in the circumferential direction. Will change. This is because the substrate W is formed with a grid-like cut to divide it into small pieces. That is, when light is incident from a direction parallel to this notch, the substrate surface exhibits a relatively high reflectance R, whereas when light is incident from a direction not parallel to this notch, The reflectivity R on the substrate surface is relatively low.

  FIG. 7 is a diagram illustrating how the reflectance R obtained changes when the substrate W is displaced in the circumferential direction. According to the example of FIG. 7, for example, when “0 °” is used as a reference, the reflectance R increases when the substrate W deviates by “140 °” or “320 °” from the position. Further, when the angle is shifted by “80 °” or “260 °”, the reflectance R becomes low. Then, the maximum deviation width is about 2%.

  That is, when the substrate W placed at the specified position P is displaced in the circumferential direction, the reflectance R is smaller or larger than when no displacement is generated. It has been confirmed by the inventors that the reflectance R of the substrate W is highly consistent within the same lot, and shows a substantially constant value when the process is determined. Therefore, it can be determined that the substrate W showing the reflectance R that is shifted by about 2% from the reflectance R of the other substrate W of the same lot has a positional shift. As described above, it is possible to detect the positional deviation occurring on the substrate W from the value of the reflectance R.

  Hereinafter, the determination process executed by the misregistration detection unit 636 will be specifically described with reference to FIG. FIG. 8 is a diagram illustrating a flow of determination processing executed by the misregistration detection unit 636.

  First, the displacement detector 636 acquires the reflectance R of the defined surface position Ps calculated by the reflectance calculator 633 (step S31). Subsequently, how many percent of the reflectance R acquired in step S31 is deviated from the normal value is calculated and acquired as a reflectance deviation value (step S32). However, this “normal value” is the reflectance R obtained when the substrate W is not displaced. The value of the normal value may be stored in advance as a reference data in a predetermined memory or the like accessible by the misalignment detection unit 636, or the reflectance R previously acquired for the substrate W of the same lot is used as the normal value. It may be used.

  Subsequently, it is determined whether or not the reflectance deviation value acquired in step S32 is smaller than a predetermined value (position deviation detection threshold E636) (step S33). If it is determined that the reflectance deviation value is smaller than the positional deviation detection threshold E636, it is determined that no positional deviation has occurred in the substrate W (step S34). On the other hand, when it is determined that the reflectance shift value is equal to or greater than the position shift detection threshold E636, it is determined that a position shift has occurred in the substrate W (step S35).

  As shown in FIG. 7, according to the inventors of the present invention, it is confirmed that the reflectance R changes by about “2%” when the substrate W is displaced in the circumferential direction. Yes. Therefore, a value of about 2% of the normal value is appropriate as the value of the positional deviation detection threshold E636.

[D. Surface state determination unit 637]
In performing heat treatment, it may be necessary to change the heat treatment recipe according to the surface state of the substrate to be processed. For example, it is necessary to change the outputs of the first light irradiation unit 3 and the second light irradiation unit 4 depending on whether or not a pattern is formed. In order to perform an appropriate heat treatment according to the surface state, as described above, the control unit 91 needs to select an appropriate heat treatment recipe according to the surface state. It is necessary to correctly grasp the surface state of the substrate. Therefore, the surface state determination unit 637 determines the surface state of the substrate W held by the holding unit 2.

  The reflectance R of the substrate surface changes depending on the surface state. For example, the reflectance of a substrate (device substrate) on which a pattern is formed is smaller than that of a substrate (bare substrate) on which no pattern is formed. This is because the absorption rate of the energy on the substrate surface is increased by forming the pattern. Further, when the antireflection film is formed on the surface, the energy absorption rate of the substrate surface is further increased, and thus the reflectance is further decreased. Thus, if the reflectance R is known, the state of the reflecting surface can be estimated from the value.

  Hereinafter, the determination process executed by the surface state determination unit 637 will be specifically described with reference to FIG. FIG. 9 is a diagram illustrating a flow of determination processing executed by the surface state determination unit 637.

  The surface state determination unit 637 first acquires the reflectance R of the specified surface position Ps calculated by the reflectance calculation unit 633 (step S41).

  Subsequently, it is determined whether or not the reflectance R acquired in step S41 is larger than a predetermined value (pattern presence / absence determination threshold E637a) (step S42). If it is determined that the reflectance R is greater than the pattern presence / absence determination threshold E637a, it is determined that no pattern is formed on the substrate surface (step S43).

  On the other hand, if it is determined that the reflectance R is equal to or less than the pattern presence / absence determination threshold E637a, it is further determined whether or not the reflectance R is greater than a predetermined value (an antireflection film presence / absence determination threshold E637b) (step). S44). If it is determined that the reflectance R is greater than the antireflection film presence / absence determination threshold E637b, it is determined that a pattern is formed on the substrate surface and no antireflection film is formed (step S45). When it is determined that the reflectance R is equal to or less than the antireflection film presence / absence determination threshold E637b, it is determined that an antireflection film is formed on the substrate surface (step S46).

  According to the inventor of the present invention, the intensity D1 of the reflected light detected by the detecting unit 62 is a value detected at room temperature when the temperature is about 700 ° C. in any surface state. It has been confirmed that it is several percent larger than For example, in the case of a bare substrate, if the reflectance R shown at room temperature (here 23 ° C.) is 100%, the reflectance R when it is placed in a high temperature state (here 700 ° C.) shows 105% ( (See FIG. 4). In the case of the device substrate, the reflectivity R shown at room temperature was 82%, whereas the reflectivity R when placed in a high temperature state was 85% (see FIG. 4). Further, in the case of the substrate on which the antireflection film is formed, the reflectance R shown at room temperature shows 68%, whereas the reflectance R when placed in a high temperature state shows 73% (see FIG. 4). ). Therefore, a value of “85 to 100” is appropriate as the value of the pattern presence / absence determination threshold E637a. Further, as the value of the antireflection film presence / absence determination threshold value E637b, a value of “73 to 82” is appropriate.

<3. Operation of heat treatment equipment>
Next, a processing procedure for the substrate W in the heat treatment apparatus 100 will be described with reference to FIGS. 10 and 11. 10 and 11 are diagrams showing a flow of processing executed in the heat treatment apparatus 100. FIG. Here, the substrate W to be processed is a semiconductor substrate to which impurities are added by an ion implantation method, and activation of the added impurities is performed by heat treatment by the heat treatment apparatus 100. The following processing operations are performed by the control unit 91 controlling each component at a predetermined timing.

  First, the substrate W after ion implantation is carried into the heat treatment apparatus 100 (step S101). More specifically, the control unit 91 controls driving means (not shown) to place the gate valve 513 in the open position. As a result, the transport opening 511 is opened. Subsequently, a transfer robot outside the apparatus carries the ion-implanted substrate W into the chamber 5 through the transfer opening 511 and places it on the holding unit 2. When the substrate W is placed on the holding unit 2, the control unit 91 controls the driving means (not shown) again to place the gate valve 513 in the closed position. As a result, the transfer opening 511 is closed and the inside of the chamber 5 is made a sealed space.

  Subsequently, the reflectance R of the specified surface position Ps is acquired (step S102). More specifically, first, light for detection is emitted from the emitting portion 61 toward the specified surface position Ps, and light detection is performed by the detecting portion 62. Subsequently, the incident light intensity acquisition unit 631 acquires the incident light intensity D 0 from the emission unit 61, and the reflected light intensity acquisition unit 632 acquires the reflected light intensity D 1 from the detection unit 62. The reflectance calculation unit 633 then reflects the reflectance R of the specified surface position Ps based on the incident light intensity D0 acquired by the incident light intensity acquisition unit 631 and the reflected light intensity D1 acquired by the reflected light intensity acquisition unit 632. Is calculated.

  Subsequently, the state determination processing unit 63 determines whether an abnormality has occurred in the substrate W carried into the apparatus in step S101 based on the reflectance R of the specified surface position Ps acquired in step S102 ( Step S103).

  More specifically, the process of step S103 is performed as follows. First, the presence / absence detection unit 634 determines whether or not the substrate W exists at the specified position P based on the reflectance R acquired in step S102 (see FIG. 5) (step S131). Here, when it is determined that the substrate W does not exist at the specified position P, it is determined that there is an abnormality in the substrate W carried into the apparatus (step S134).

  On the other hand, when it is determined that the substrate W exists at the specified position P, the warpage detection unit 635 subsequently determines whether or not the substrate W is warped based on the reflectance R acquired in step S102. Determination is made (see FIG. 6) (step S132). If it is determined that the substrate W is warped, it is determined that there is an abnormality in the substrate W carried into the apparatus (step S134).

  On the other hand, when it is determined that the substrate W is not warped, the positional deviation detection unit 636 subsequently detects the positional deviation in the circumferential direction on the substrate W based on the reflectance R acquired in step S102. It is determined whether or not it has occurred (see FIG. 8) (step S133). Here, when it is determined that the substrate W is displaced in the circumferential direction, it is determined that there is an abnormality in the substrate W carried into the apparatus (step S134).

  On the other hand, when it is determined that the substrate W is not displaced in the circumferential direction, it is determined that no abnormality has occurred in the substrate W carried into the apparatus (step S135).

  If it is determined in step S103 that an abnormality has occurred in the substrate W carried into the apparatus, a predetermined alarm process (for example, what abnormality has occurred) is determined without proceeding to the heat treatment operation on the substrate W. Processing for notifying the operator) is performed (step S104).

  On the other hand, when it is determined in step S103 that there is no abnormality in the substrate W carried into the apparatus, the surface state determination unit 637 subsequently reflects the reflectance R of the specified surface position Ps acquired in step S102. Based on (that is, the reflectance R of the surface of the substrate held by the holding unit 2), the surface state of the substrate W held by the holding unit 2 is determined (step S105). That is, whether the substrate surface is in a state where no pattern is formed, a state where a pattern is formed and no antireflection film is formed, or a state where an antireflection film is formed is determined. (See FIG. 9).

  Subsequently, the control unit 91 selects and reads an appropriate recipe from the storage device that stores the plurality of heat treatment recipes according to the determination result of step S105 (step S106).

  Subsequently, the control unit 91 controls each component included in the heat treatment apparatus 100 based on the heat treatment recipe read in step S106, and performs the heat treatment on the substrate W (step S107).

  More specifically, the process of step S107 is performed as follows. First, the substrate W held by the holding unit 2 is preheated (step S171). More specifically, the control unit 91 controls the first light irradiation unit 3 according to the recipe selected in step S <b> 106 to irradiate light toward the substrate W held by the holding unit 2. The substrate W is heated to a predetermined preheating temperature by this light energy. At this time, the light emitted from the halogen lamp 31 of the first light irradiating unit 3 is directed to the substrate W held by the holding unit 2 while being reflected directly or reflected by the reflecting plate 11, the reflector 32, etc. The substrate W is preheated by the light irradiation.

  When the preliminary heating is completed, the substrate W held by the holding unit 2 is then flash-heated (step S182). More specifically, the control unit 91 controls the second light irradiation unit 4 according to the recipe selected in step S106 to irradiate the substrate W held by the holding unit 2 with flash light (flash light). The substrate W is heated to a predetermined processing heating temperature by this light energy. At this time, the light emitted from the flash lamp 41 of the second light irradiation unit 4 is directed to the substrate W held by the holding unit 2 while being reflected directly or by the reflector 11 or the reflector 42, and so on. The substrate W is heated by flash irradiation.

  In addition, since flash heating is performed by flash irradiation from the flash lamp 41, the surface temperature of the substrate W can be increased in a short time. In other words, the flash light emitted from the flash lamp 41 of the second light irradiation unit 4 has an irradiation time of about 0.1 to 10 milliseconds, in which the electrostatic energy stored in advance is converted into an extremely short light pulse. It is a very short and strong flash. The surface temperature of the substrate W that is flash-heated by flash irradiation from the flash lamp 41 instantaneously increases to a predetermined processing temperature (for example, about 1000 ° C. to 1100 ° C.), and impurities added to the substrate W After being activated, the surface temperature drops rapidly. As described above, since the surface temperature of the substrate W can be raised and lowered in a very short time in the heat treatment apparatus 100, diffusion of impurities added to the substrate W due to heat (this diffusion phenomenon is caused by the profile of the impurities in the substrate W). Impurities can be activated while suppressing (also referred to as “bending”). Since the time required for activation of the added impurity is extremely short compared to the time required for thermal diffusion, activation is possible even for a short time when no diffusion of about 0.1 millisecond to 10 millisecond occurs. Is completed.

  Further, by preheating the substrate W by the first light irradiation unit 3 before the flash heating, the surface temperature of the substrate W can be easily raised to the processing temperature by the flash light irradiation from the flash lamp 41. In particular, in this embodiment, since the halogen lamp 31 is used for preheating, the substrate W is preliminarily heated to a higher temperature (for example, 600 degrees or more) region than when a hot plate or the like is used. be able to. This makes it possible to reduce the temperature rise width in flash heating, and to prevent the occurrence of cracks in the substrate in flash heating.

  Here, a recipe suitable for the surface state of the substrate W held by the holding unit 2 is selected in advance, and the control unit 91 controls the first light irradiation unit 3 and the second light irradiation unit 4 according to the recipe. To do. More specifically, the output of the halogen lamp 31 and the flash lamp 41 is adjusted. As a result, an appropriate heat treatment according to the surface state of the substrate W can be performed.

  When the process of step S107 is completed, the reflectance R of the specified surface position Ps is acquired again (step S108). The specific contents of this process are the same as in step S102 described above.

  Subsequently, the state determination processing unit 63 determines whether an abnormality has occurred in the substrate W after the heat treatment based on the reflectance R of the specified surface position Ps acquired in step S108 (step S109). The specific contents of this process are the same as in step S103 described above.

  If it is determined in step S109 that an abnormality has occurred in the substrate W after the heat treatment, a predetermined alarm process (for example, a process for notifying the operator of what abnormality has occurred) is performed (step S110).

  For example, the presence / absence detection unit 634 determines that the substrate W exists at the specified position P in the determination process before heat treatment (step S103), but the substrate at the specified position P in the determination process after heat treatment (step S109). When it is determined that W does not exist, it can be estimated that the substrate W has been cracked due to thermal stress in the heat treatment. This is because if the substrate W is cracked by thermal stress, the substrate W is shattered and can no longer be detected at the specified position P. Therefore, in this case, in step S110, a process of notifying the operator that there is a high possibility that the substrate W has been cracked by the heat treatment is performed.

  Further, for example, the warpage detection unit 635 warps the substrate W in the determination process after the heat treatment (step S109) even though it is determined that the substrate W is not warped in the determination process before the heat treatment (step S103). When it is determined that the substrate has occurred, it can be estimated that the substrate W has warped in the temperature rising process in the heat treatment. Therefore, in this case, in step S110, a process of notifying the operator that there is a high possibility that the substrate W has been warped by the heat treatment is performed.

  If it is determined in step S109 that no abnormality has occurred in the substrate W after the heat treatment, the substrate W is unloaded from the heat treatment apparatus 100 (step S111). More specifically, the controller 91 controls the driving means (not shown) to place the gate valve 513 in the open position. Subsequently, a transfer robot outside the apparatus carries the substrate W out of the chamber 5 through the transfer opening 511. Thus, the processing of the substrate W in the heat treatment apparatus 100 is completed.

<4. effect>
In the heat treatment apparatus 100 according to the above-described embodiment, the emitting unit 61 causes light to be incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) toward the specified surface position Ps, and the incident light Is reflected at the specified surface position Ps, the detection unit 62 detects the reflected light. Then, the state determination processing unit 63 determines the state of the substrate W based on the reflected light intensity D1 detected by the detection unit 62. Thereby, the state of the substrate W in the apparatus can be grasped without opening the apparatus.

  In addition, the presence / absence detection unit 634 determines whether or not the substrate W exists at the specified position P (that is, whether or not the substrate W exists on the holding unit 2). When the substrate W no longer exists, it can be detected without opening the apparatus.

  In particular, before and after the apparatus is opened when the substrate W is cracked in the heat treatment by the presence / absence detection unit 634 performing the determination process before and after performing the heat treatment (step S107 in FIG. 11) on the substrate W. (Step S111 in FIG. 11), the situation can be detected quickly.

  In addition, when the substrate W exists at the specified position P, the warpage detection unit 635 determines whether the substrate W is warped. Can be detected without opening.

  Further, the reflectance calculation unit 633 calculates the reflectance R of the specified surface position Ps based on the detection result by the detection unit 62. When the substrate W exists at the specified position P (that is, when the substrate W is held by the holding unit 2), the reflectance R is the surface reflectance of the substrate W. The misregistration detection unit 636 determines whether or not misregistration in the circumferential direction has occurred on the substrate W based on the reflectance R calculated by the reflectance calculation unit 633. Therefore, when the substrate W is displaced, this can be detected without opening the apparatus. Further, the surface state determination unit 637 determines the surface state of the substrate W based on the reflectance R. Therefore, the surface state of the substrate W in the apparatus can be grasped without opening the apparatus.

  Further, the control unit 91 can select an appropriate recipe according to the surface state of the substrate W to be processed according to the determination result by the surface state determination unit 637. The control unit 91 controls each unit in the apparatus according to a properly selected recipe, so that heat treatment suitable for the surface state of the substrate W can be performed.

  In addition, since the emitting unit 61 causes the detection light to enter the position shifted from the specified surface position Ps by a predetermined distance (that is, the position shifted from the center of the substrate W held by the holding unit 2), the state determination processing unit 63 can correctly determine the state of the substrate W. For example, even when the substrate W is warped from the center toward the peripheral portion, the warpage detection unit 635 can perform the determination by using the reflected light from the position shifted from the center of the substrate. It is possible to reliably detect warpage. Further, for example, when the substrate W is displaced in the circumferential direction, the misalignment detection unit 636 can detect a slight misalignment by performing the determination using the reflected light from the position deviated from the center of the substrate. It becomes possible to detect with high accuracy.

  In addition, since the emitting unit 61 irradiates a region larger than the size of the IC chip formed on the substrate, the state determination processing unit 63 can correctly determine the state of the substrate W. For example, even when there is unevenness in the surface state of the substrate W held by the holding unit 2 (for example, even when a pattern having a roughness is formed on the surface of the substrate), a sufficiently large region is used. By performing the determination using the reflected light, the surface state determination unit 637 can correctly determine the surface state.

<5. Other Embodiments>
Other embodiments will be described. In the following, only differences from the heat treatment apparatus 100 according to the above embodiment will be described, and descriptions of points that are not different will be omitted. In addition, the same components are indicated by using the reference symbols used earlier.

<5-1. Transmitted light>
In the heat treatment apparatus 100 according to the above-described embodiment, when the light emitted from the emission unit 61 is reflected at the specified surface position Ps, the detection unit 62 is arranged on the path along which the reflected light travels. However, as shown in FIG. 12, when the light emitted from the emitting portion 61 passes through the specified surface position Ps and travels straight as it is, it may be arranged on the path along which the transmitted light (straight light) travels. Good (detector 62a). However, FIG. 12 is a side sectional view showing the configuration of the heat treatment apparatus 100a according to this embodiment.

  The detection unit 62 according to the above embodiment detects light (reflected light L1) reflected at the specified surface position Ps and acquires the intensity D1 (see FIG. 1). The detection unit 62a detects the light (transmitted light L3) transmitted through the specified surface position Ps and acquires the intensity (transmitted light intensity D3).

  The heat treatment apparatus 100a includes a processing unit that determines the state of the substrate W based on the transmitted light intensity D3 acquired by the detection unit 62a. In particular, based on the transmitted light intensity D3, a processing unit (presence / absence detecting unit 634a) that determines whether or not the substrate W exists at the specified position P (that is, whether or not the substrate W is held by the holding unit 2). Is provided. Presence / absence detection unit 634a is realized by control unit 91.

  When the reflecting surface exists at the prescribed surface position Ps (that is, when the substrate W exists at the prescribed position P), the incident light L0 is reflected according to the reflectance of the substrate surface that is the reflecting surface, and the reflected light L1 is reflected. It is formed. Therefore, in this case, the transmitted light L3 is not formed, and the transmitted light intensity D3 is substantially “0”. On the other hand, when the reflecting surface does not exist at the specified surface position Ps (that is, when the substrate W does not exist at the specified position P), the incident light L0 travels straight without being reflected and the transmitted light L3 is formed. Therefore, in this case, the transmitted light intensity D3 is a sufficiently large value other than “0”. In this way, it is possible to determine whether or not the substrate W exists at the specified position P from the value of the transmitted light intensity D3.

  Hereinafter, the determination process executed by the presence / absence detection unit 634a will be described in detail with reference to FIG. FIG. 13 is a diagram illustrating a flow of determination processing executed by the presence / absence detection unit 634a.

  First, the presence / absence detection unit 634a acquires the transmitted light intensity D3 acquired by the detection unit 62a (step S51). Subsequently, it is determined whether or not the transmitted light intensity D3 acquired in step S51 is greater than a predetermined value (presence / absence detection threshold E634a) (step S52). However, it is assumed that “0” or a sufficiently small value is used as the presence / absence detection threshold value E634a. If it is determined that the transmitted light intensity D3 is greater than the presence / absence detection threshold value E634a, it is determined that the substrate W does not exist at the specified position P (step S53). On the other hand, when it is determined that the transmitted light intensity D3 is equal to or less than the presence / absence detection threshold E634a, it is determined that the substrate W exists at the specified position P (step S54).

  Before and after the apparatus is opened when the substrate W is cracked in the heat treatment by the presence / absence detection unit 634a executing the determination process before and after performing the heat treatment on the substrate W (see step S107 in FIG. 11) ( The fact can be quickly detected (see step S111 in FIG. 11).

<5-2. Light from halogen lamp>
In the heat treatment apparatus 100 according to the above-described embodiment, the detection unit 62 detects the light emitted from the emission unit 61, but may detect the light emitted from the halogen lamp 31 (the detection unit 62b). ). That is, as shown in FIG. 14, when the light emitted from the halogen lamp 31 passes straight through the specified surface position Ps and goes straight as it is, the detection unit 62b may be arranged on the path along which the straight light travels. . However, FIG. 14 is a side sectional view showing the configuration of the heat treatment apparatus 100b according to this embodiment.

  When the light (incident light L0) emitted from the halogen lamp 31 and incident on the specified surface position Ps passes through the specified surface position Ps, the detection unit 62b according to this embodiment transmits the transmitted light (transmitted halogen). The light L4) is detected and its intensity (transmitted halogen light intensity D4) is acquired.

  The heat treatment apparatus 100b includes a processing unit that determines the state of the substrate W based on the transmitted halogen light intensity D4 acquired by the detection unit 62b. In particular, based on the transmitted halogen light intensity D4, a processing unit (presence / absence detection unit 634b) that determines whether or not the substrate W exists at the specified position P (that is, whether or not the substrate W is held by the holding unit 2). ). Presence / absence detection unit 634b is realized by control unit 91.

  When the reflecting surface is present at the prescribed surface position Ps (that is, when the substrate W is present at the prescribed position P), the incident light L0 is reflected by the substrate surface that is the reflecting surface (here, the back surface of the substrate W). Therefore, the transmitted halogen light L4 does not reach the detection unit 62b. Therefore, in this case, the transmitted halogen light intensity D4 is substantially “0”. On the other hand, when the reflecting surface does not exist at the specified surface position Ps (that is, when the substrate W does not exist at the specified position P), the incident light L0 travels straight without being reflected and the transmitted halogen light L4 is formed. Therefore, in this case, the transmitted halogen light intensity D4 is a sufficiently large value other than “0”. In this way, it is possible to determine whether or not the substrate W exists at the specified position P from the value of the transmitted halogen light intensity D4.

  Hereinafter, the determination process executed by the presence / absence detection unit 634b will be described in detail with reference to FIG. FIG. 15 is a diagram illustrating a flow of determination processing executed by the presence / absence detection unit 634b.

  First, the presence / absence detection unit 634b acquires the transmitted halogen light intensity D4 acquired by the detection unit 62b (step S61). Subsequently, it is determined whether or not the transmitted halogen light intensity D4 acquired in step S61 is larger than a predetermined value (presence / absence detection threshold value E634b) (step S62). However, it is assumed that “0” or a sufficiently small value is used as the presence / absence detection threshold value E634b. When it is determined that the transmitted halogen light intensity D4 is greater than the presence / absence detection threshold value E634b, it is determined that the substrate W does not exist at the specified position P (step S63). On the other hand, if it is determined that the transmitted halogen light intensity D4 is equal to or less than the presence / absence detection threshold value E634b, it is determined that the substrate W exists at the specified position P (step S64).

  Before and after the apparatus is opened when the substrate W is cracked in the heat treatment by the presence / absence detection unit 634b performing the determination process before and after performing the heat treatment on the substrate W (see step S107 in FIG. 11) ( The fact can be quickly detected (see step S111 in FIG. 11).

<5-3. Others>
In the above embodiment, the substrate state determination unit 6 performs a process of detecting an abnormality of the substrate W before and after performing the heat treatment (step S103 in FIG. 10 and step S109 in FIG. 11). The timing for executing the process for detecting W abnormality is not limited to this, and may be executed at an arbitrary timing. For example, when some abnormality occurs in the heat treatment apparatus 100 and the apparatus stops urgently, the substrate state determination unit 6 may perform a process of detecting an abnormality of the substrate W.

  In the above-described embodiment, the presence / absence detection unit 634, the warp detection unit 635, the displacement detection unit 636, and the surface state determination unit 637 perform various determinations using the reflectance R acquired by the reflectance calculation unit 633. (See, for example, FIG. 5), the determination may be made using the reflected light intensity D1 acquired by the reflected light intensity acquisition unit 632 directly. For example, the presence / absence detection unit 634 may determine that the substrate W exists when the reflected light intensity D1 is larger than a predetermined value (for example, “0”). For example, the warpage detection unit 635 may determine that the substrate W is not warped when the reflected light intensity D1 is larger than a predetermined value.

  In the above embodiment, the chamber 5 is a hexagonal column. However, the shape of the chamber 5 is not limited to this, and various columnar shapes (for example, a cylinder, a square column, a triangular column, etc.) may be used. May be.

  In the above-described embodiment, both of the two light irradiation units 3 and 4 are arranged at positions separated by 100 mm or more from the substrate W held by the holding unit 2. The portions 3 and 4 need not be separated from the substrate W by 100 mm or more.

  In the above embodiment, the second light irradiation unit 4 is configured to include the xenon flash lamp as the light source, but a halogen lamp may be used as the light source.

  In the above-described embodiment, each of the first light irradiation unit 3 and the second light irradiation unit 4 includes a plurality of rod-shaped light sources (halogen lamp 31 and flash lamp 41). It does not have to be rod-shaped. For example, a spiral light source may be used. A plurality of point light sources may be arranged regularly. A plurality of annular light sources having different diameters may be arranged concentrically.

  Further, in the above embodiment, the holding unit 2 is configured to support the substrate W by the ring-shaped member, but the mode of holding the substrate W is not limited to this. For example, the substrate W may be supported (surface supported) by a flat plate member (for example, a stage formed of quartz). Moreover, it is good also as a structure which further provides a some support pin in such a plate-shaped member, and supports the board | substrate W by these some support pins (point support). Moreover, it is good also as a structure supported by the hand of various shapes.

It is a sectional side view which shows the structure of the heat processing apparatus. It is a longitudinal cross-sectional view which shows the structure of the heat processing apparatus. It is a figure which shows typically the relationship of the component of a board | substrate state determination part. It is a figure which shows the relationship between the reflectance of a board | substrate surface, and the state of the said board | substrate. It is a figure which shows the flow of the judgment process which a presence detection part performs. It is a figure which shows the flow of the judgment process which a curvature detection part performs. It is a figure which illustrates how the reflectance obtained when a substrate raises position shift in the peripheral direction changes. It is a figure which shows the flow of the judgment process which a position shift detection part performs. It is a figure which shows the flow of the judgment process which a surface state determination part performs. It is a figure which shows the flow of the process performed with the heat processing apparatus. It is a figure which shows the flow of the process performed with the heat processing apparatus. It is a sectional side view which shows the structure of the heat processing apparatus. It is a figure which shows the flow of the judgment process which a presence detection part performs. It is a sectional side view which shows the structure of the heat processing apparatus. It is a figure which shows the flow of the judgment process which a presence detection part performs.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reflector 2 Holding | maintenance part 3 1st light irradiation part 4 2nd light irradiation part 5 Chamber 6 Substrate state determination part 61 Emitting part 62, 62a, 62b Detection part 63 State determination processing part 91 Control part 100, 100a, 100b Heat processing apparatus 631 Incident light intensity acquisition unit 632 Reflected light intensity acquisition unit 633 Reflectance calculation unit 634, 634a, 634b Presence / absence detection unit 635 Warpage detection unit 636 Position shift detection unit 637 Surface state determination unit W Substrate

Claims (16)

A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
Holding means for holding the substrate such that the surface thereof is placed at the prescribed surface position and the center thereof is located at the prescribed center position;
One or more light irradiation means for irradiating light toward the specified surface position from a position separated from the substrate held by the holding means by a predetermined distance;
Detection light emitting means for making detection light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) toward the specified surface position;
A reflected light detecting means disposed on a path along which the reflected light travels when the detected light emitted from the detected light emitting means is reflected at the specified surface position;
State determination means for determining the state of the substrate carried into the apparatus based on the detection result by the reflected light detection means;
With
The state determination means is
Substrate presence / absence determining means for determining whether or not a substrate is held by the holding means;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 1,
The substrate presence / absence determining means is
A heat treatment apparatus characterized by determining whether or not a substrate is held by the holding means before and after performing the heat treatment on the substrate. The heat treatment apparatus according to claim 1 or 2,
The state determination means is
A warp detecting means for determining whether or not the substrate held by the holding means is warped;
A heat treatment apparatus comprising: A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
Holding means for holding the substrate such that the surface thereof is placed at the prescribed surface position and the center thereof is located at the prescribed center position;
One or more light irradiation means for irradiating light toward the specified surface position from a position separated from the substrate held by the holding means by a predetermined distance;
Detection light emitting means for making detection light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) toward the specified surface position;
A reflected light detecting means disposed on a path along which the reflected light travels when the detected light emitted from the detected light emitting means is reflected at the specified surface position;
State determination means for determining the state of the substrate carried into the apparatus based on the detection result by the reflected light detection means;
With
The state determination means is
Based on the detection result by the reflected light detection means, reflectance calculation means for calculating the reflectance of the specified surface position;
A misregistration detection means for determining whether or not a misregistration occurs in the circumferential direction on the substrate based on the reflectance when the substrate is held by the holding means;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 4,
The positional deviation detection means is
The reflectivity calculated by the reflectivity calculating means is calculated as to how much is deviated from the reflectivity obtained when the substrate held by the holding means is not displaced in the circumferential direction, A heat treatment apparatus characterized by determining that the positional deviation has occurred when the calculated deviation amount exceeds a predetermined allowable range. A heat treatment apparatus according to any one of claims 1 to 5,
The state determination means is
Based on the detection result by the reflected light detection means, reflectance calculation means for calculating the reflectance of the specified surface position;
When the substrate is held by the holding unit, the surface state determination unit that determines the surface state of the substrate based on the reflectance;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 6,
Depending on the result of determination by the surface condition determining means, control means for selecting the processing parameter according to the pressure heat treatment on the substrate to control each of the one or more light emitting means based on the selected processing parameters,
A heat treatment apparatus comprising: The heat treatment apparatus according to any one of claims 1 to 7,
The detection light emitting means is
A heat treatment apparatus, wherein the detection light is incident on a position on the specified surface position and shifted by a predetermined distance from the specified center position. A heat treatment apparatus according to any one of claims 1 to 8,
The heat treatment apparatus characterized in that the detection light irradiation region on the prescribed surface position by the detection light emitting means is a region larger than the size of an IC chip formed on the substrate. A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
Holding means for holding the substrate such that the surface thereof is placed at the prescribed surface position and the center thereof is located at the prescribed center position;
One or more light irradiation means for irradiating light toward the specified surface position from a position separated from the substrate held by the holding means by a predetermined distance;
Detection light emitting means for making detection light incident at a predetermined incident angle θ (where 0 ° ≦ θ <90 °) toward the specified surface position;
A light detection means, and when the detection light emitted from the detection light emission means passes through the prescribed surface position and travels straight, the transmitted light detection means arranged on a path along which the transmitted light travels;
State determination means for determining the state of the substrate carried into the apparatus based on the detection result by the transmitted light detection means;
With
The state determination means is
Substrate presence / absence determining means for determining whether or not a substrate is held by the holding means;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 10,
The substrate presence / absence determining means is
A heat treatment apparatus characterized by determining whether or not a substrate is held by the holding means before and after performing the heat treatment on the substrate. A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
Holding means for holding the substrate such that the surface thereof is placed at the prescribed surface position and the center thereof is located at the prescribed center position;
One or more light irradiation means for irradiating heating light for heating the substrate from a position separated by a predetermined distance from the substrate held by the holding means toward the specified surface position;
A light detecting means, and when the heating light emitted from the predetermined light irradiating means among the one or more light irradiating means passes straight through the specified surface position, the transmitted light travels along the path A transmitted light detecting means arranged;
State determination means for determining the state of the substrate carried into the apparatus based on the detection result by the transmitted light detection means;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 12,
The state determination means is
Substrate presence / absence determining means for determining whether or not a substrate is held by the holding means;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 13,
The substrate presence / absence determining means is
A heat treatment apparatus characterized by determining whether or not a substrate is held by the holding means before and after performing the heat treatment on the substrate. The heat treatment apparatus according to any one of claims 1 to 14,
One of the one or more light irradiation means is:
A flash lamp that emits a flash of light,
A heat treatment apparatus comprising: The heat treatment apparatus according to any one of claims 1 to 15,
At least one of the one or more light irradiation means,
Halogen lamp,
A heat treatment apparatus comprising:

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