JP5513864B2 - 原子炉炉内構造物およびその製造方法 - Google Patents
原子炉炉内構造物およびその製造方法 Download PDFInfo
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- JP5513864B2 JP5513864B2 JP2009279555A JP2009279555A JP5513864B2 JP 5513864 B2 JP5513864 B2 JP 5513864B2 JP 2009279555 A JP2009279555 A JP 2009279555A JP 2009279555 A JP2009279555 A JP 2009279555A JP 5513864 B2 JP5513864 B2 JP 5513864B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04F—PUMPING OF FLUID BY DIRECT CONTACT OF ANOTHER FLUID OR BY USING INERTIA OF FLUID TO BE PUMPED; SIPHONS
- F04F5/00—Jet pumps, i.e. devices in which flow is induced by pressure drop caused by velocity of another fluid flow
- F04F5/02—Jet pumps, i.e. devices in which flow is induced by pressure drop caused by velocity of another fluid flow the inducing fluid being liquid
- F04F5/10—Jet pumps, i.e. devices in which flow is induced by pressure drop caused by velocity of another fluid flow the inducing fluid being liquid displacing liquids, e.g. containing solids, or liquids and elastic fluids
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04F—PUMPING OF FLUID BY DIRECT CONTACT OF ANOTHER FLUID OR BY USING INERTIA OF FLUID TO BE PUMPED; SIPHONS
- F04F5/00—Jet pumps, i.e. devices in which flow is induced by pressure drop caused by velocity of another fluid flow
- F04F5/44—Component parts, details, or accessories not provided for in, or of interest apart from, groups F04F5/02 - F04F5/42
- F04F5/46—Arrangements of nozzles
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C1/00—Reactor types
- G21C1/04—Thermal reactors ; Epithermal reactors
- G21C1/06—Heterogeneous reactors, i.e. in which fuel and moderator are separated
- G21C1/08—Heterogeneous reactors, i.e. in which fuel and moderator are separated moderator being highly pressurised, e.g. boiling water reactor, integral super-heat reactor, pressurised water reactor
- G21C1/084—Boiling water reactors
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C15/00—Cooling arrangements within the pressure vessel containing the core; Selection of specific coolants
- G21C15/24—Promoting flow of the coolant
- G21C15/243—Promoting flow of the coolant for liquids
- G21C15/25—Promoting flow of the coolant for liquids using jet pumps
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C19/00—Arrangements for treating, for handling, or for facilitating the handling of, fuel or other materials which are used within the reactor, e.g. within its pressure vessel
- G21C19/28—Arrangements for introducing fluent material into the reactor core; Arrangements for removing fluent material from the reactor core
- G21C19/30—Arrangements for introducing fluent material into the reactor core; Arrangements for removing fluent material from the reactor core with continuous purification of circulating fluent material, e.g. by extraction of fission products deterioration or corrosion products, impurities, e.g. by cold traps
- G21C19/307—Arrangements for introducing fluent material into the reactor core; Arrangements for removing fluent material from the reactor core with continuous purification of circulating fluent material, e.g. by extraction of fission products deterioration or corrosion products, impurities, e.g. by cold traps specially adapted for liquids
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C17/00—Monitoring; Testing ; Maintaining
- G21C17/02—Devices or arrangements for monitoring coolant or moderator
- G21C17/022—Devices or arrangements for monitoring coolant or moderator for monitoring liquid coolants or moderators
- G21C17/0225—Chemical surface treatment, e.g. corrosion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Fluid Mechanics (AREA)
- Ceramic Engineering (AREA)
- Chemically Coating (AREA)
- Chemical Treatment Of Metals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
また、水ジェット洗浄を行うことで付着堆積したクラッドを取り除くことも提案されているが、その費用は極めて高価であり、実用的ではない。
この課題を解決するために、従来、ジェットポンプ部材の表面に各種の皮膜を形成することによりクラッドの付着を抑制することが提案されていた(特許文献1〜4)。しかしながら、これらの技術は、いずれも、皮膜形成によるクラッドの付着抑制効果が十分でなく、また、皮膜形成のために高価な装置が必要であり、皮膜形成部材の大きさ、形状に制限があるなどの課題があった。
図1は外部再循環方式によるジェットポンプシステムを採用した沸騰水型原子炉の概略構成を示す縦断面図、図2は沸騰水型原子炉のジェットポンプの要部拡大図である。
ジェットポンプ11へのクラッドの付着を抑制するために、ジェットポンプ11を構成するジェットポンプ部材の表面の少なくとも一部、特にクラッドの付着の著しい部位に、酸化ニオブ、チタン酸ジルコニウムまたはチタン酸ニッケルからなるコーティング皮膜を形成する。これにより炉水中に存在するクラッドがジェットポンプ部材表面に付着、堆積することを抑制し、ジェットポンプ11の初期の性能を長期間に亘って維持することができる。
この熱処理により、ジェットポンプ部材の表面に酸化ニオブ、チタン酸ジルコニウムまたはチタン酸ニッケルからなるコーティング皮膜が形成される。
試験片として、ステンレスSUS304Lを40mm×5mm×1mmの短冊状に加工したものを用意する。
このコーティング皮膜を形成した試験片に対し、実機を模擬したクラッド付着特性試験を行った。
チタンとジルコニウムに原子比率が1:1であるチタン−ジルコニウム系アルコキシドを5重量%含むイソプロピルアルコール溶液を用いた他は実施例1と同じ方法、条件でコーティング皮膜を形成した。試験片上に形成されたコーティング皮膜はアモルファスのチタン酸ジルコニウムからなるものであった。
チタンとニッケルの原子比率が1:1であるチタン−ニッケル系アルコキシド5重量%含むブタノール溶液を用いた他は実施例1と同じ方法、条件でコーティング皮膜を形成した。試験片上に形成されたコーティング皮膜はアモルファスのチタン酸ニッケルからなるものであった。
比較例1として、コーティング皮膜を形成しないSUS304L基材からなる試験片についても実施例1と同じ方法でクラッド付着特性試験を行った。その結果、目視、または顕微鏡観察により試験片表面に顕著なクラッド付着が観察され、また顕著な重量増も認められた。
Claims (12)
- 沸騰水型原子炉を構成する原子炉炉内構造物の表面の少なくとも一部に、酸化ニオブ、チタン酸ジルコニウムまたはチタン酸ニッケルからなるコーティング皮膜を形成したことを特徴とする原子炉炉内構造物。
- 前記チタン酸ジルコニウムのチタンとジルコニウムの原子比率が1:1であることを特徴とする請求項1記載の原子炉炉内構造物。
- 前記チタン酸ニッケルのチタンとニッケルの原子比率が1:1であることを特徴とする請求項1記載の原子炉炉内構造物。
- 前記コーティング皮膜は、膜厚が、0.01μm以上、10μm以下であることを特徴とする請求項1乃至3いずれかに記載の原子炉炉内構造物。
- 前記原子炉炉内構造物が、インレットミキサーを構成するジェットポンプ部材であることを特徴とする請求項1乃至4いずれかに記載の原子炉炉内構造物。
- 沸騰水型原子炉を構成する原子炉炉内構造物の表面の少なくとも一部にニオブ化合物を含む溶液を塗布する工程と、前記溶液を塗布した原子炉炉内構造物の表面を熱処理して酸化ニオブからなるコーティング皮膜を形成する工程とを有することを特徴とする原子炉炉内構造物の製造方法。
- 沸騰水型原子炉を構成する原子炉炉内構造物の表面の少なくとも一部にチタン及びジルコニウムの錯体を含む溶液、チタン及びジルコニウムのアルコキシド化合物を含む溶液又はチタン及びジルコニウムの塩を含む溶液を塗布する工程と、前記溶液を塗布した原子炉炉内構造物の表面を熱処理してチタン酸ジルコニウムからなるコーティング皮膜を形成する工程とを有することを特徴とする原子炉炉内構造物の製造方法。
- 前記溶液のチタンとジルコニウムの原子比率が1:1であることを特徴とする請求項7記載の原子炉炉内構造物の製造方法。
- 沸騰水型原子炉を構成する原子炉炉内構造物の表面の少なくとも一部にチタン及びニッケルの錯体を含む溶液、チタン及びニッケルのアルコキシド化合物を含む溶液又はチタン及びニッケルの塩を含む溶液を塗布する工程と、前記溶液を塗布した原子炉炉内構造物の表面を熱処理してチタン酸ニッケルからなるコーティング皮膜を形成する工程とを有することを特徴とする原子炉炉内構造物の製造方法。
- 前記溶液のチタンとニッケルの原子比率が1:1であることを特徴とする請求項9記載の原子炉炉内構造物の製造方法。
- 前記熱処理は、80℃以上、600℃以下の温度で行うことを特徴とする請求項6ないし10いずれかに記載の原子炉炉内構造物の製造方法。
- 前記コーティング皮膜は、膜厚が、0.01μm以上、10μm以下であることを特徴とする請求項6ないし11いずれかに記載の原子炉炉内構造物の製造方法。
Priority Applications (1)
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JP2009279555A JP5513864B2 (ja) | 2008-12-12 | 2009-12-09 | 原子炉炉内構造物およびその製造方法 |
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JP2008317128 | 2008-12-12 | ||
JP2008317128 | 2008-12-12 | ||
JP2009279555A JP5513864B2 (ja) | 2008-12-12 | 2009-12-09 | 原子炉炉内構造物およびその製造方法 |
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JP2010160144A JP2010160144A (ja) | 2010-07-22 |
JP5513864B2 true JP5513864B2 (ja) | 2014-06-04 |
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US (2) | US20110256036A1 (ja) |
EP (1) | EP2377966A4 (ja) |
JP (1) | JP5513864B2 (ja) |
WO (1) | WO2010067849A1 (ja) |
Families Citing this family (2)
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JP5774285B2 (ja) * | 2010-06-25 | 2015-09-09 | 株式会社東芝 | ジェットポンプの皮膜形成方法 |
JP6173806B2 (ja) * | 2013-07-09 | 2017-08-02 | 株式会社東芝 | ジェットポンプの皮膜形成方法及びその皮膜形成用浸漬装置 |
Family Cites Families (12)
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JPS5895615A (ja) * | 1981-11-30 | 1983-06-07 | Nippon Soda Co Ltd | 酸化ニオブ薄膜形成用組成物 |
JPS5978929A (ja) * | 1982-10-28 | 1984-05-08 | Nippon Soda Co Ltd | 酸化ニオブの薄膜形成用組成物 |
US4973526A (en) | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
US5260353A (en) * | 1992-10-16 | 1993-11-09 | Kerr-Mcgee Chemical Corporation | Hydrophobicity through metal ion activation |
US5444747A (en) * | 1994-05-09 | 1995-08-22 | General Electric Company | Jet pump electro-nozzle |
US6633623B2 (en) | 2000-11-29 | 2003-10-14 | General Electric Company | Apparatus and methods for protecting a jet pump nozzle assembly and inlet-mixer |
JP2004345922A (ja) * | 2003-05-23 | 2004-12-09 | Tokyo Ohka Kogyo Co Ltd | 高誘電体薄膜、高誘電体薄膜形成用材料、および高誘電体薄膜形成方法 |
JP2005049099A (ja) * | 2003-07-29 | 2005-02-24 | Toshiba Corp | インターナルポンプおよび軽水型原子力プラント一次系配管 |
JP2005049161A (ja) * | 2003-07-31 | 2005-02-24 | Toshiba Corp | ジェットポンプ、インターナルポンプ、絞り流量計および異物フィルタ |
US8023609B2 (en) * | 2004-12-30 | 2011-09-20 | General Electric Company | Dielectric coating for surfaces exposed to high temperature water |
US20070003001A1 (en) | 2005-06-30 | 2007-01-04 | General Electric Company | Method for mitigation oxide fouling in structural components in light water reactors |
US9691506B2 (en) * | 2008-09-16 | 2017-06-27 | General Electric Company | High dielectric insulated coax cable for sensitive impedance monitoring |
-
2009
- 2009-12-09 JP JP2009279555A patent/JP5513864B2/ja active Active
- 2009-12-10 US US13/139,424 patent/US20110256036A1/en not_active Abandoned
- 2009-12-10 EP EP09831953A patent/EP2377966A4/en not_active Withdrawn
- 2009-12-10 WO PCT/JP2009/070705 patent/WO2010067849A1/ja active Application Filing
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2016
- 2016-02-19 US US15/048,227 patent/US9850581B2/en active Active
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Publication number | Publication date |
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US9850581B2 (en) | 2017-12-26 |
US20160194763A1 (en) | 2016-07-07 |
US20110256036A1 (en) | 2011-10-20 |
WO2010067849A1 (ja) | 2010-06-17 |
EP2377966A1 (en) | 2011-10-19 |
EP2377966A4 (en) | 2012-08-29 |
JP2010160144A (ja) | 2010-07-22 |
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