JP5487387B2 - Manufacturing method of sensor device - Google Patents

Description

  The present invention relates to a method for manufacturing a sensor device that detects a physical quantity.

  Conventionally, tactile sensors have been used for limbs and the like of robots. For example, the tactile sensor described in Patent Literature 1 has four minute cantilevers (cantilever beams) formed on a silicon substrate by a nano thin film generation technique. The four cantilevers are arranged at 90 degrees different from each other. An elastomer layer covering four cantilevers is formed on the silicon substrate.

  When pressure or shearing force is applied to the elastomer layer, any or all of the four cantilevers are deformed by changing the internal stress of the elastomer layer. By detecting the amount of deformation of the four cantilevers, the magnitude and direction of the pressure or shear force can be detected.

JP 2008-008854 A

  In the above tactile sensor, when pressure or shear force is repeatedly applied to the elastomer layer, the four corners of the elastomer layer are easily peeled off from the silicon substrate. Thereby, the reliability of the tactile sensor decreases.

  The objective of this invention is providing the manufacturing method of the sensor apparatus which can prevent that the edge part of a coating body peels from one surface of a board | substrate.

[1] The present invention
(1) A method of manufacturing a sensor device according to the present invention includes a step of forming a detection unit for detecting a physical quantity on one surface of a substrate, and a frame member made of a polymer material so as to surround the detection unit on one surface of the substrate. A step of adhering with an adhesive, a step of filling a fluid polymer material into a space inside the frame member on the substrate so as to cover the detection portion, and a frame member by curing the fluid polymer material Forming a coating layer that covers the detection unit on the inside of the substrate and integrating the frame member and the coating layer as a covering, and the step of forming the detection unit includes three or more different directions on one surface of the substrate. Each of the plurality of sensor elements includes a cantilever having a movable part that curves obliquely upward from one surface of the substrate, and a resistance part having a resistance value that changes due to deformation of the cantilever. Including Thus, the thickness of the integrated cover layer is the same as the thickness of the frame member or larger than the thickness of the frame member.
In the method for manufacturing a sensor device according to the present invention, a frame member made of a polymer material is bonded with an adhesive so as to surround a detection portion formed on one surface of the substrate, and flows into a space inside the frame member on the substrate. The functional polymer material is filled. Further, by curing the fluid polymer material, a coating layer that covers the detection portion is formed inside the frame member, and the frame member and the coating layer are integrated as a coating body.
In this case, since the frame member of the integrated cover is bonded to one surface of the substrate with an adhesive, the edge of the cover is prevented from being peeled off from the one surface of the substrate. Therefore, the reliability of the sensor device is improved.
The step of forming the detection unit includes a step of forming three or more sensor elements in different directions on one surface of the substrate, and each of the plurality of sensor elements includes a movable portion that curves obliquely upward from one surface of the substrate. And a resistance portion having a resistance value that changes due to deformation of the cantilever.
In this case, when pressure or a shearing force is applied to the covering made of the elastic polymer material, the cantilever is deformed by changing the internal stress of the covering. Thereby, the resistance value of the resistance portion changes. Therefore, the magnitude and direction of the pressure and shear force applied to the covering can be detected by detecting changes in the resistance values of the resistance portions of the three or more sensor elements.
(2) A frame member made of an elastic polymer material is used as a frame member made of a polymer material, and a fluid elastic material is used as a fluid polymer material in a space inside the frame member so as to cover a plurality of sensor elements. It may be filled with molecular material.
In this case, the frame member made of the elastic polymer material and the coating layer made of the elastic polymer material are integrated to form a covering that covers the plurality of sensor elements on one surface of the substrate. When a pressure or a shearing force is applied to the cover made of the elastic polymer material, the internal stress of the cover changes, so that the movable parts of the plurality of sensor elements are deformed. Therefore, the pressure and shear force can be detected as physical quantities by detecting the deformation amount of the movable part of each sensor element. According to such a configuration, even when a pressure or a shearing force is repeatedly applied to the cover, the edge of the cover is prevented from being peeled from one surface of the substrate. Therefore, the reliability of the sensor device that detects pressure and shear force is improved.
(3) The polymer material used for the frame member and the polymer material used for the coating layer may be the same type of polymer material.
(4) The step of forming the plurality of sensor elements includes a step of sequentially forming the first and second films on the substrate, and a second step in a region corresponding to the movable portion of each sensor element on the second film. Forming a control layer having a thermal expansion coefficient different from that of the film, and forming a cantilever of each sensor element by the second film and the control layer, wherein the step of forming the cantilever is a first under the movable part. A step of bending the movable portion obliquely upward from one surface of the substrate due to internal stress of the control layer by removing the film portion may be included.
In this case, since the control layer has a different thermal expansion coefficient from that of the second film, internal stress is generated in the control layer. Therefore, by removing the part of the first film below the movable part, the control layer is autonomously curved diagonally upward from one surface of the substrate together with the movable part due to the internal stress of the control layer. Thereby, the cantilever of each sensor element that curves obliquely upward from one surface of the substrate can be easily and compactly formed, and the structure of each sensor element can be simplified. Therefore, it is possible to reduce the size, cost, and reliability of the sensor device that detects pressure and shear force.
(5) The resistance portion may be formed by forming the second film from a semiconductor material and adding an impurity to a partial region of the movable portion.
In this case, the resistance part can be easily formed in the movable part of the cantilever of each sensor element, and the structure of the cantilever of each sensor element can be simplified.
[2] Reference form (1) A method for manufacturing a sensor device according to this reference form includes a step of forming a detection unit for detecting a physical quantity on one surface of a substrate, and a frame made of a polymer material so as to surround the detection unit. A step of adhering a member to one surface of the substrate with an adhesive, a step of filling a space inside the frame member on the substrate with a fluid polymer material so as to cover the detection portion, and a fluid polymer material And a step of forming a coating layer that covers the detection portion inside the frame member by curing and integrating the frame member and the coating layer as a covering.

In the manufacturing method of the sensor device according to the present embodiment , a frame member made of a polymer material is bonded with an adhesive so as to surround a detection part formed on one surface of the substrate, and is placed in a space inside the frame member on the substrate. A fluid polymeric material is filled. Further, by curing the fluid polymer material, a coating layer that covers the detection portion is formed inside the frame member, and the frame member and the coating layer are integrated as a coating body.

  In this case, since the frame member of the integrated cover is bonded to one surface of the substrate with an adhesive, the edge of the cover is prevented from being peeled off from the one surface of the substrate. Therefore, the reliability of the sensor device is improved.

  (2) The detection unit includes a sensor element having a movable part, and uses a frame member made of an elastic polymer material as a frame member made of a fluid polymer material, and a space inside the frame member so as to cover the sensor element. Alternatively, a fluid elastic polymer material may be filled as the fluid polymer material.

  In this case, the frame member made of the elastic polymer material and the coating layer made of the elastic polymer material are integrated to form a covering that covers the sensor element on one surface of the substrate. When pressure or a shearing force is applied to the cover made of the elastic polymer material, the internal stress of the cover changes, so that the movable part of the sensor element is deformed. Therefore, the pressure and shear force can be detected as physical quantities by detecting the deformation amount of the movable part. According to such a configuration, even when a pressure or a shearing force is repeatedly applied to the cover, the edge of the cover is prevented from being peeled from one surface of the substrate. Therefore, the reliability of the sensor device that detects pressure and shear force is improved.

  (3) The step of forming the detection unit includes a step of forming three or more sensor elements in different directions on one surface of the substrate, and each of the plurality of sensor elements curves obliquely upward from one surface of the substrate. You may include the cantilever which has a movable part, and the resistance part which has a resistance value which changes with deformation | transformation of a cantilever.

  In this case, when pressure or a shearing force is applied to the covering made of the elastic polymer material, the cantilever is deformed by changing the internal stress of the covering. Thereby, the resistance value of the resistance portion changes. Therefore, the magnitude and direction of the pressure and shear force applied to the covering can be detected by detecting changes in the resistance values of the resistance portions of the three or more sensor elements.

(4) The step of forming the plurality of sensor elements includes a step of sequentially forming the first and second films on the substrate, and a heat different from that of the second film in a region corresponding to the movable portion on the second film. A step of forming a control layer having an expansion coefficient and a step of forming a cantilever with the second film and the control layer, wherein the step of forming the cantilever is performed by removing a portion of the first film under the movable part. A step of bending the movable portion obliquely upward from one surface of the substrate due to the internal stress of the control layer may be included.

  In this case, since the control layer has a different thermal expansion coefficient from that of the second film, internal stress is generated in the control layer. Therefore, by removing the part of the first film below the movable part, the control layer is autonomously curved diagonally upward from one surface of the substrate together with the movable part due to the internal stress of the control layer. Thereby, the cantilever that curves obliquely upward from one surface of the substrate can be easily and compactly formed, and the structure of the sensor element can be simplified. Therefore, it is possible to reduce the size, cost, and reliability of the sensor device that detects pressure and shear force.

  (5) The resistance portion may be formed by forming the second film from a semiconductor material and adding an impurity to a partial region of the movable portion.

  In this case, the resistance portion can be easily formed in the movable portion of the cantilever, and the structure of the cantilever can be simplified.

  According to the present invention, since the frame member of the integrated cover is bonded to one surface of the substrate by the adhesive, it is possible to prevent the edge of the cover from being peeled from the one surface of the substrate. Therefore, the reliability of the sensor device is improved.

It is a perspective view of a tactile sensor device. It is a top view of a tactile sensor device. It is a longitudinal section of a tactile sensor device. It is process drawing which shows the manufacturing method of a tactile sensor apparatus. It is process drawing which shows the manufacturing method of a tactile sensor apparatus. It is process drawing which shows the manufacturing method of a tactile sensor apparatus. It is process drawing which shows the manufacturing method of a tactile sensor apparatus. It is process drawing which shows the manufacturing method of a tactile sensor apparatus. It is a figure for demonstrating the manufacturing method of a tactile sensor apparatus. It is a perspective view of one tactile sensor of a tactile sensor device. It is a top view of a tactile sensor. It is a longitudinal cross-sectional view of a tactile sensor device. It is process drawing which shows an example of the manufacturing method of a tactile sensor. It is process drawing which shows an example of the manufacturing method of a tactile sensor. It is process drawing which shows an example of the manufacturing method of a tactile sensor. It is process drawing which shows an example of the manufacturing method of a tactile sensor. It is process drawing which shows an example of the manufacturing method of a tactile sensor. It is process drawing which shows an example of the manufacturing method of a tactile sensor. It is a circuit diagram which shows the part of the output circuit connected to a cantilever. It is a top view of one tactile sensor in a tactile sensor device.

  Hereinafter, a tactile sensor device according to an embodiment of the present invention and a manufacturing method thereof will be described with reference to the drawings.

(1) Configuration of Touch Sensor Device FIG. 1 is a perspective view of a touch sensor device according to an embodiment of the present invention, FIG. 2 is a plan view of the touch sensor device of FIG. 1, and FIG. It is a longitudinal cross-sectional view.

  As shown in FIGS. 1 to 3, a plurality of tactile sensors 200 (see FIGS. 2 and 3) are formed in a partial region on one surface of a common substrate 101 made of, for example, crystalline silicon. The covering body 110 is covered. The covering 110 is composed of a frame member 111 and a covering layer 112. The frame member 111 and the covering layer 112 are integrated.

  In the present embodiment, six tactile sensors 200 are formed on the substrate 101. The detailed configuration of each tactile sensor 200 will be described later. In the remaining region 115 on one surface of the substrate 101, a part or all of an output circuit described later is formed.

  For example, when the surface of the covering 110 of the touch sensor device 100 is pressed with a finger, pressure and shear force are applied to the plurality of touch sensors 200. Pressure and shear force are detected by each of the plurality of tactile sensors 200. Details will be described later.

(2) Manufacturing Method of Tactile Sensor Device 100 FIGS. 4 to 8 are process diagrams showing a manufacturing method of the tactile sensor device. 4, FIG. 5, FIG. 6, FIG. 7 (a) and FIG. 8 (a) are perspective views, FIG. 7 (b) and FIG. 8 (b) are plan views, and FIG. 7 (c) and FIG. 8 (c) is a longitudinal sectional view.

  First, as shown in FIG. 4, for example, a metal mold 500 is prepared. The mold 500 has a rectangular groove 501.

  Next, as shown in FIG. 5, the groove portion 501 of the mold 500 is filled with a fluid elastomer 111A. As the elastomer 111A, a thermosetting elastomer, a thermoplastic elastomer, a room temperature curable elastomer, or the like can be used. Thermosetting elastomers include thermosetting resin elastomers and vulcanized rubber. In the present embodiment, room temperature curable silicone rubber is used. For example, Sylpot (registered trademark) 184 W / C manufactured by Toray Dow Corning Co., Ltd. can be used as the room temperature curable silicone rubber.

  By curing the fluid elastomer 111A in the groove portion 501 of the mold 500, a frame member 111 made of an elastomer is formed as shown in FIG. In the present embodiment, by using room temperature curable silicone rubber as the elastomer 111A, the fluid elastomer 111A can be cured by natural drying at room temperature. The frame member 111 has a rectangular shape as a whole. The frame member 111 has a rectangular cross section.

  Next, as shown in FIG. 7, a substrate 101 on which a plurality of tactile sensors 200 are formed in advance in a partial region of one surface is prepared by a method described later. In another region 115 on one surface of the substrate 101, a part or all of an output circuit described later is formed in advance. A frame member 111 is bonded to one surface of the substrate 101 with an adhesive 113 so as to surround the plurality of touch sensors 200 on one surface of the substrate 101. As the adhesive 113, a thermoplastic resin adhesive, a thermosetting resin adhesive, an ultraviolet curable resin adhesive, or the like can be used.

  After that, as shown in FIG. 8, a fluid elastomer is filled in the space inside the frame member 111 on the substrate 101 so as to cover the plurality of tactile sensors 200, and is cured. Thereby, the coating layer 112 made of an elastomer that covers the plurality of tactile sensors 200 is formed inside the frame member 111. The type of elastomer of the covering layer 112 may be the same as or different from the elastomer of the frame member 111. In the present embodiment, room temperature curable silicone rubber is used as the elastomer of the frame member 111. For example, Sylpot (registered trademark) 184 W / C manufactured by Toray Dow Corning Co., Ltd. can be used as the room temperature curable silicone rubber.

  In the present embodiment, by using room temperature curable silicone rubber as the elastomer of the covering layer 112, the fluid elastomer can be cured by natural drying at room temperature. The frame member 111 and the covering layer 112 are integrated as a covering body 110.

  It is preferable that the thickness of the covering layer 112 is the same as the thickness of the frame member 111 or the thickness of the covering layer 112 is larger than the thickness of the frame member 111.

  Here, in order to explain the effect of the method of manufacturing the touch sensor device 100 according to the present embodiment, a method of manufacturing the touch sensor device according to the comparative example will be described.

  FIG. 9 is a diagram for explaining a method of manufacturing a tactile sensor device according to a comparative example. 9A is a perspective view, FIG. 9B is a plan view, and FIG. 9C is a longitudinal sectional view.

  In the manufacturing method according to the comparative example, a mold (not shown) having an opening is used. The opening of the mold has a rectangular shape corresponding to a rectangular region including a plurality of touch sensors 200 on the substrate 101. A mold is placed on the substrate 101 so that the opening is located in a region including the plurality of tactile sensors 200, and the opening is filled with a fluid elastomer. After the elastomer is cured, the mold is removed to form the coating layer 120 shown in FIG.

  In the tactile sensor device manufactured by the manufacturing method according to the comparative example, when pressure and shear force are repeatedly applied to the covering layer 120, the edge of the covering layer 120 is easily peeled off from the substrate 101.

  On the other hand, in the tactile sensor device 100 manufactured by the manufacturing method according to the present embodiment, even when pressure and shear force are repeatedly applied to the integrated cover 110, the edge of the cover 110 is the substrate. Peeling from 101 is prevented.

(3) Configuration of Touch Sensor 200 Next, the configuration of the touch sensor 200 included in the touch sensor device 100 of FIGS. 1 to 3 will be described.

  10 is a perspective view of one tactile sensor of the tactile sensor device of FIGS. 1 to 3, FIG. 11 is a plan view of the tactile sensor of FIG. 10, and FIG. 12 is a longitudinal sectional view of the tactile sensor of FIG.

  Hereinafter, the X axis and the Y axis are defined in two directions parallel to the surface of the substrate 101 and orthogonal to each other, and the Z axis is defined in a direction perpendicular to the surface of the substrate 101.

  The tactile sensor 200 shown in FIGS. 10 to 12 includes three or more sensor elements 201, 202, 203, and 204. In the present embodiment, the tactile sensor 200 includes four sensor elements 201, 202, 203, and 204.

  Sensor elements 201, 202, 203, and 204 include cantilevers CL1, CL2, CL3, and CL4, respectively. Sensor elements 201, 202, 203, and 204 are formed on a common substrate 101. The size of the touch sensor 200 is as small as about 1 mm, for example.

  The cantilever CL1 of the sensor element 201 and the cantilever CL3 of the sensor element 203 face each other, and the cantilever CL2 of the sensor element 202 and the cantilever CL4 of the sensor element 204 face each other. Further, the sensor elements 201 and 203 and the sensor elements 202 and 204 are arranged in directions orthogonal to each other.

  In the present embodiment, sensor elements 201 and 203 are arranged so that cantilevers CL1 and CL3 are along the X-axis direction, and sensor elements 202 and 204 are arranged so that cantilevers CL3 and CL4 are along the Y-axis direction. .

(4) Example of Manufacturing Method of Tactile Sensor 200 FIGS. 13 to 18 are process diagrams showing an example of a manufacturing method of the tactile sensor 200, where (a) is a schematic cross-sectional view, and (b) is a schematic plan view. is there. 13 to 18 show only one sensor element 201 included in the tactile sensor 200, the other sensor elements 202, 203, and 204 are simultaneously formed in the same manner.

First, as shown in FIG. 13, an SOI (Silicon On Insulator: silicon on insulator) substrate 1000 is prepared. The SOI substrate 1000 includes, for example, a substrate 101 made of crystalline silicon, a buried oxide film 102, and a crystalline silicon film 103. The thickness of the crystalline silicon film 103 is, for example, 200 nm. The buried oxide film 102 is made of, for example, silicon oxide (SiO ₂ ).

Next, as shown in FIG. 14, boron (B) is added to the substantially U-shaped region of the crystalline silicon film 103 by thermal diffusion or ion implantation. As a result, a substantially U-shaped p-type doped layer 103 a is formed in the crystalline silicon film 103. The substantially U-shaped p-type doped layer 103a includes a pair of leg portions extending in parallel with each other and a connecting portion connecting these leg portions. The thickness of the p-type doped layer 103a is, for example, 100 nm. Moreover, the boron concentration in the p-type doped layer 103a is, for example, 0.2 atomic% (10 ²⁰ / cm ³ ).

  Next, as shown in FIG. 15, photolithography and low pressure CVD (chemical vapor deposition) are performed on the crystalline silicon film 103 so as to cover the pair of legs of the substantially U-shaped p-type doped layer 103a. Then, an insulating layer 104 made of SiN (silicon nitride) having a pair of openings 105 is formed. The pair of openings 105 in the insulating layer 104 are provided so as to overlap the pair of legs of the p-type doped layer 103a. Thereby, part of the p-type doped layer 103 a is exposed in the pair of openings 105.

  Further, as shown in FIG. 16, a pair of rectangular electrodes 106 made of Cr (chrome) / Au (gold) are formed on the region of the insulating layer 104 including the pair of openings 105 by photolithography and vacuum deposition. At the same time, a substantially rectangular deflection control layer 107 made of Cr is formed on the crystalline silicon film 103 so as to be aligned with the p-type doped layer 103a.

  During the deposition of Cr, the deflection control layer 107 and the crystalline silicon film 103 are thermally expanded due to a temperature rise. Thereafter, the deflection control layer 107 and the crystalline silicon film 103 contract. In this case, residual stress is generated in the deflection control layer 107 after cooling due to the difference in thermal expansion coefficient between Cr and crystalline silicon.

  Next, as shown in FIG. 17, the crystalline silicon around the substantially U-shaped p-type doped layer 103a and the substantially rectangular deflection control layer 107 is removed by photolithography and etching, except for the region under the insulating layer 104. The region of the film 103 is removed. The connecting portion of the deflection control layer 107 and the p-type doped layer 103a, and the portion of the crystalline silicon film 103 below them serve as a cantilever CL1 described later. As the etching, for example, a wet etching method can be used. As the etching solution, for example, 2,6-hydroxynaphthoic acid (HNA) can be used.

  Next, as shown in FIG. 18, the region of the buried oxide film 102 under the cantilever CL1 is removed by etching. As the etchant, for example, hydrogen fluoride (HF) can be used.

  Here, as described above, residual stress is generated in the deflection control layer 107. Therefore, when the above-described region of the buried oxide film 102 is removed, due to the residual stress in the deflection control layer 107, the deflection control layer 107 and the portion of the crystalline silicon film 103 therebelow as shown in FIG. Curves upward. Thereby, the cantilever CL1 is formed so as to be substantially rectangular in the XY plane and to bend obliquely upward from one surface of the substrate 101. The cantilever CL1 includes a support part S and a movable part R. The support portion S is supported on the buried oxide film 102, and the buried oxide film 102 under the movable portion R is removed.

  In this way, the sensor element 201 having the cantilever CL1 is manufactured. In the sensor element 201, electrodes 106 are respectively formed on a pair of legs of a p-type doped layer 103a having a substantially U shape. Thereby, the p-type doped layer 103a can function as a piezoresistive element.

  Next, in the state of FIG. 18, water washing, IPA (isopropyl alcohol) substitution, and t-butyl alcohol substitution are performed. Thereafter, freeze drying (vacuum freeze drying) is performed.

  A part or all of an output circuit described later is formed on the substrate 101 before or in parallel with the formation of the touch sensor 200.

  Thereafter, as shown in FIGS. 7 and 8, a covering body 110 including a frame member 111 and a covering layer 112 is formed so as to cover the plurality of tactile sensors 200.

In the sensor element 201 thus manufactured, an electrode 104a is formed at one end of a p-type doped layer 103a having a substantially U shape, and an electrode 104b is formed at the other end. Thereby, the p-type doped layer 103a can function as a piezoresistive element.

  When pressure or shear force is applied to the surface of the covering 110, the internal stress of the covering 110 changes, and the cantilever CL1 is deformed. Thereby, the piezoresistance of the p-type doped layer 103a changes.

  According to the above manufacturing method, since the residual stress exists in the deflection control layer 107, the deflection control layer 107 caused by the residual stress is removed from the movable portion by removing the portion of the buried oxide film 102 below the movable portion R. Along with R, it bends diagonally upward from one surface of the substrate 101 autonomously. Thereby, the cantilevers CL1, CL2, CL3, and CL4 that are curved obliquely upward from one surface of the substrate 101 can be easily and compactly formed, and the structure of the sensor elements 201 to 204 can be simplified. Therefore, the tactile sensor device 100 can be reduced in size and cost.

(5) Output Circuit of Tactile Sensor Device 200 FIG. 19 is a circuit diagram showing a portion of the output circuit connected to the cantilever CL1. As shown in FIG. 19, external resistors R1, R2, and R3 are connected to the pair of electrodes 106 of the cantilever CL1, and a bridge circuit 211 is configured by the cantilever CL1, the external resistors R1, R2, and R3 and the DC power source E. Yes. The output voltage of the bridge circuit 211 is supplied to the amplifier 221, and the output voltage of the amplifier 221 is input to the A / D converter 231.

  An output circuit similar to the output circuit of FIG. 19 is connected to the other cantilevers CL2, CL3, and CL4.

Some or all of the bridge circuit 211, the amplifier 221 and the A / D converter 231 are formed in the region 115 of the substrate 101 of FIGS. In this embodiment mode, only the bridge circuit 211 is formed in the region 115 of the substrate 101, and the amplifier 221 and the A / D converter 231 are provided in an external device. Further, the bridge circuit 211, the amplifier 221 and the A / D converter 231 may be formed in the region 115 of the substrate 101.

  In the present embodiment, six sets of bridge circuits 211 corresponding to the six tactile sensors 200 are formed in the region 115 of the substrate 101.

  Here, the piezoresistance of the p-type doped layer 103a changes due to the deformation of the hinge portion of the cantilever CL1. This amount of change in piezoresistance is detected as a change in voltage by the bridge circuit 211 and the amplifier 221. Further, the output voltage of the amplifier 221 is converted into an output value S1 of a digital signal by the A / D converter 231. The magnitude of pressure and shear force can be detected based on the output value S1.

  As shown in FIG. 12, the cantilevers CL1 and CL3 are curved obliquely upward at one end side. The cantilevers CL1 and CL3 are arranged so that one end sides thereof face each other. For this reason, when a shearing force is applied to the covering 110 in FIG. 12 in the direction of arrow A, the cantilever CL1 is deformed so that the radius of curvature is large, and the cantilever CL3 is deformed so that the radius of curvature is small. On the other hand, when a shearing force is applied to the cover 110 in the direction of arrow B, the cantilever CL1 is deformed so that the radius of curvature is small, and the cantilever CL3 is deformed so that the radius of curvature is large. Further, when pressure is applied to the covering 110 in the direction of arrow C, the cantilevers CL1 and CL3 are deformed so that the radius of curvature becomes large.

  Therefore, when the shear force is applied in the direction of the arrow A and when the shear force is applied in the direction of the arrow B, the change direction (increases in the piezoresistance of the p-type doped layer 103a of the cantilevers CL1 and CL3. Direction or decreasing direction) is reversed. When pressure is applied in the direction of arrow C, the direction of change in piezoresistance of the p-type doped layer 103a of the cantilevers CL1, CL2, CL3, and CL4 is the same.

  The operations of the other cantilevers CL2 and CL4 are the same as the operations of the cantilevers CL1 and CL3.

  10 to 12, output values corresponding to the sensor elements 201, 202, 203, and 204 are obtained. The relationship between the shear force in the X-axis direction and the output value, the relationship between the shear force in the Y-axis direction and the output value, and the relationship between the pressure in the Z-axis direction and the output value are obtained in advance by measurement. Thereby, the magnitude and direction of pressure and shear force can be detected.

(6) Effects of the Embodiment According to the method for manufacturing the tactile sensor device 100 according to the present embodiment, the frame member 111 of the integrated covering 110 is bonded to one surface of the substrate 101 by the adhesive 113. Even when a pressure and a shearing force are repeatedly applied to the cover 110, the edge of the cover 110 is prevented from peeling off from one surface of the substrate 101. Therefore, the reliability of the tactile sensor device 100 is improved.

(7) Other Embodiments (a) In the above embodiment, the frame member 111 has a rectangular shape as a whole. However, the present invention is not limited to this, and if the frame member 111 can surround the tactile sensor 200, The frame member 111 may have other shapes. For example, the entire shape of the frame member 111 may be a circle or an ellipse, or may be another polygon such as a triangle, a pentagon, or a hexagon. Further, the entire shape of the frame member 111 may be another shape formed by a curve.

  (B) In the above-described embodiment, the frame member 111 has a rectangular cross-sectional shape. However, the frame member 111 is not limited to this, and the frame member 111 is not limited thereto. The cross section may have other shapes. When one surface of the substrate 101 is a flat surface, the side surface and the upper surface of the frame member 111 may have any shape as long as the lower surface of the frame member 111 is a flat surface. For example, the cross-sectional shape of the frame member 111 may be a triangle or a trapezoid. If one surface of the substrate 101 is a curved surface, a frame member 111 having a lower surface coinciding with the curved surface of the substrate 101 is used.

  (C) In the above embodiment, a crystalline silicon substrate is used as the material of the substrate 101, but the present invention is not limited to this, and other materials may be used as the material of the substrate 101. For example, another semiconductor material such as silicon carbide, an insulating material such as glass, ceramics, or resin, or a metal material such as aluminum may be used as the material of the substrate 101.

  (D) In the above embodiment, an elastomer is used as the material of the frame member 111 and the covering layer 112. However, the present invention is not limited to this, and other polymer materials such as an elastic resin may be used. In addition, when the covering that covers the detection unit does not require elasticity, other polymer materials such as a resin that does not have elasticity may be used.

  (E) In the above embodiment, the tactile sensor device 100 having the plurality of tactile sensors 200 on the substrate 101 has been described. However, the tactile sensor device 100 may have one tactile sensor 200 on the substrate 101.

  (F) Although the tactile sensor device 100 has been described in the above embodiment, the present invention can also be applied to other sensor devices that require a covering. For example, the detection unit may be one or a plurality of load sensors that do not use a cantilever.

  (G) In the above embodiment, a part or all of the output circuit is formed together with the plurality of touch sensors 200 on the substrate 101, but only the touch sensor 200 may be formed on the substrate 101.

  (H) In the above embodiment, the tactile sensor 200 is configured by the four sensor elements 201 to 204, but the tactile sensor 200 may be configured by three or more other sensor elements.

  FIG. 20 is a plan view of one tactile sensor in a tactile sensor device according to another embodiment of the present invention.

  The tactile sensor 200 of FIG. 20 is different from the tactile sensor 200 of FIGS. 10 to 12 in that the tactile sensor 200 includes three sensor elements 201, 202, and 203. The three sensor elements 201, 202, and 203 are arranged in directions different from each other by 120 degrees.

  In the tactile sensor 200 of FIG. 20, output values corresponding to the sensor elements 201, 202, and 203 are obtained. The relationship between the shear force in the X-axis direction and the output value, the relationship between the shear force in the Y-axis direction and the output value, and the relationship between the pressure in the Z-axis direction and the output value are obtained in advance by measurement. Thereby, the magnitude and direction of pressure and shear force can be detected.

  (I) In the above embodiment, the p-type doped layer 103a serving as a piezoresistive element is formed in a U-shape. However, the shape of the p-type doped layer 103a is not limited to the U-shape, and is V-shaped, W It may be a letter shape, or any other shape.

(8) Correspondence between each constituent element of claim and each part of the embodiment Hereinafter, an example of correspondence between each constituent element of the claim and each part of the embodiment will be described, but the present invention is limited to the following example. Not.

  In the above embodiment, the substrate 101 is an example of the substrate, the tactile sensor 200 is an example of the detection unit, the frame member 111 is an example of the frame member, the covering layer 112 is an example of the covering layer, and the covering body 110 is an example of a covering, and elastomer is an example of a polymer material.

  The sensor elements 201 to 204 are examples of sensor elements, the cantilevers CL1 to CL4 are examples of cantilevers, the p-type doped layer 103a is an example of a resistance portion, and the buried oxide film 102 is an example of a first film. The crystalline silicon film 103 is an example of the second film, the deflection control layer 107 is an example of the control layer, the p-type doped layer 103a is an example of the resistance part, and the movable part R is an example of the movable part. Boron is an example of an impurity, and crystalline silicon is an example of a semiconductor material.

  The present invention can be used to manufacture a sensor device that detects various physical quantities.

DESCRIPTION OF SYMBOLS 100 Tactile sensor device 101 Substrate 102 Embedded oxide film 103 Crystal silicon film 103a P-type doped layer 104 Insulating layer 105 Opening 106 Electrode 107 Deflection control layer 110 Covering body 111 Frame member 111A Elastomer 112 Covering layer 113 Adhesive 115 Region 200 Touch sensor 201, 202, 203, 204 Sensor element 210 Bridge circuit part 211 Bridge circuit 221 Amplifier 231 A / D converter 500 Metal mold 501 Groove part 1000 SOI substrate CL1, CL2, CL3, CL4 Cantilever E DC power supply R Movable part R1 , R2, R3 External resistance S Support part S1 Output value

Claims (5)

Forming a detection unit for detecting a physical quantity on one surface of the substrate;
Bonding a frame member made of a polymer material to the one surface of the substrate with an adhesive so as to surround the detection unit;
Filling a space inside the frame member on the substrate with a fluid polymer material so as to cover the detection unit;
E Bei a step of integrating the said coating layer and the frame member as the covering member to form a coating layer covering the detection portion on the inner side of the frame member by curing the flowable polymeric material ,
The step of forming the detection unit includes a step of forming a plurality of sensor elements of three or more in different directions on the one surface of the substrate,
Each of the plurality of sensor elements includes a cantilever having a movable portion that curves obliquely upward from one surface of the substrate, and a resistance portion having a resistance value that changes due to deformation of the cantilever,
Method of manufacturing a sensor device the thickness of the integrated coating layer, characterized in that greater than the thickness of the same or the frame member and the thickness of the frame member. A frame member made of an elastic polymer material is used as the frame member made of the polymer material, and a fluid elastic material is used as the fluid polymer material in the space inside the frame member so as to cover the plurality of sensor elements. The method for manufacturing a sensor device according to claim 1, wherein a polymer material is filled. 3. The method of manufacturing a sensor device according to claim 1, wherein the polymer material used for the frame member and the polymer material used for the coating layer are the same type of polymer material. The step of forming the plurality of sensor elements includes:
Forming first and second films in sequence on the substrate;
Forming a control layer having a thermal expansion coefficient different from that of the second film in a region corresponding to the movable part of each sensor element on the second film;
Forming the cantilever of each sensor element by the second film and the control layer,
The step of forming the cantilever includes
The step of bending the movable portion obliquely upward from the one surface of the substrate due to an internal stress of the control layer by removing a portion of the first film below the movable portion. The manufacturing method of the sensor apparatus as described in any one of claim | item 1 -3 . 5. The method of manufacturing a sensor device according to claim 4, wherein the second film is formed of a semiconductor material, and the resistance section is formed by adding an impurity to a partial region of the movable section.

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