JP5485888B2 - 熱に敏感な材料の気化 - Google Patents
熱に敏感な材料の気化 Download PDFInfo
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- JP5485888B2 JP5485888B2 JP2010519943A JP2010519943A JP5485888B2 JP 5485888 B2 JP5485888 B2 JP 5485888B2 JP 2010519943 A JP2010519943 A JP 2010519943A JP 2010519943 A JP2010519943 A JP 2010519943A JP 5485888 B2 JP5485888 B2 JP 5485888B2
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- Prior art keywords
- particulate material
- heater
- vaporization system
- vaporization
- heat
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- 239000000463 material Substances 0.000 title claims description 60
- 230000008016 vaporization Effects 0.000 title claims description 58
- 238000009834 vaporization Methods 0.000 title claims description 53
- 239000011236 particulate material Substances 0.000 claims description 52
- 239000011800 void material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000011364 vaporized material Substances 0.000 claims description 10
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 230000005484 gravity Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 description 19
- 239000003446 ligand Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 239000006200 vaporizer Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005524 ceramic coating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241000222354 Trametes Species 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
(a)粒子状材料の受け入れに適した空隙を規定するリガンドからなる網状材料構造を持ち、その空隙が網状材料構造の体積の85%超を占めることで、粒子状材料をその空隙に供給するのが容易になるとともに、気化した材料がその空隙から広がるのが容易になっている構成のヒーターと;
(b)上記リガンドによって熱を発生させるか伝えることで、上記空隙の中にある粒子状材料を気化させてその空隙の中を移動させる熱発生手段とを備える気化装置によって達成される。
20 マニホールド
25 気化装置
30 ヒーター
35 熱伝達支持体
40 支持体
50 基部
60 供給装置
70 容器
80 粒子状材料
90 開口部
100 気化装置
110 ヒーター
120 粒子の経路
130 切断線
140a 可塑性材料
140b 可塑性材料
150a 導電性プレート
150b 導電性プレート
160 熱シンク
Claims (13)
- 粒子状材料を気化させるための気化システムであって、
(a)粒子状材料の供給源と;
(b)粒子状材料の受け入れに適した空隙を含む網状材料構造を持ち、その空隙が網状材料構造の体積の85%超を占めることで、粒子状材料をその空隙に供給するのが容易になるとともに、気化した材料がその空隙から広がるのが容易になっている構成と、その空隙内の粒子状材料を気化させるための熱を発生または伝導させるための手段とを有するヒーターと;
(c)そのヒーターによって生成された気化した材料を受け入れる位置にあるマニホールドと;
(d)上記粒子状材料を加熱された上記ヒーターに重力で供給してその材料を空隙の中に配置する手段とを備え、上記ヒーターの角度を水平に対して30°〜70°に設定した気化システム。 - 上記網状材料構造が導電性であり、上記熱発生手段が、上記網状材料構造に電流を流して熱を発生させる、請求項1に記載の気化システム。
- 上記網状材料構造がガラス状炭素を含む、請求項2に記載の気化システム。
- 上記網状材料構造が、ガラス状炭素と、耐火性金属または導電性セラミックからなる同形の被覆とを備える、請求項2に記載の気化システム。
- 上記耐火性金属が、タングステン、タンタル、モリブデンのいずれかを含む、請求項4に記載の気化システム。
- 上記導電性セラミックが炭化ケイ素である、請求項4に記載の気化システム。
- それぞれの空隙が、上記粒子状材料の有効直径以上の有効直径を持つ、請求項1に記載の気化システムの使用。
- それぞれの空隙が、上記粒子状材料の有効直径の2倍を超える有効直径を持つ、請求項7に記載の気化システムの使用。
- 上記網状材料構造の中に上記粒子状材料が滞在する平均滞在時間が2秒未満である、請求項1に記載の気化システムの使用。
- 上記粒子状材料として、固体状態から蒸気状態へと変化するもの、または気化する前に液体状態を通過するものが選択される、請求項1に記載の気化システムの使用。
- 上記網状材料構造が振動する、請求項1に記載の気化システムの使用。
- 上記熱発生手段が独立した加熱要素である、請求項1に記載の気化システム。
- 上記粒子状材料が上記網状材料構造に到達する前にその粒子状材料を冷却する手段をさらに備える、請求項1に記載の気化システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/834,039 US8027574B2 (en) | 2007-08-06 | 2007-08-06 | Vaporization of thermally sensitive materials |
US11/834,039 | 2007-08-06 | ||
PCT/US2008/009316 WO2009020562A1 (en) | 2007-08-06 | 2008-08-01 | Vaporization of thermally sensitive materials |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010535941A JP2010535941A (ja) | 2010-11-25 |
JP5485888B2 true JP5485888B2 (ja) | 2014-05-07 |
Family
ID=39816945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010519943A Active JP5485888B2 (ja) | 2007-08-06 | 2008-08-01 | 熱に敏感な材料の気化 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8027574B2 (ja) |
EP (1) | EP2188409B1 (ja) |
JP (1) | JP5485888B2 (ja) |
TW (1) | TWI401120B (ja) |
WO (1) | WO2009020562A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103930588B (zh) * | 2011-06-22 | 2016-08-17 | 艾克斯特朗欧洲公司 | 用于气相沉积的方法和装置 |
WO2012175124A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Vapor deposition material source and method for making same |
KR101711504B1 (ko) | 2011-06-22 | 2017-03-02 | 아익스트론 에스이 | 기상 증착 시스템 및 공급 헤드 |
DE102011051260A1 (de) | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs |
DE102011051263B4 (de) | 2011-06-22 | 2022-08-11 | Aixtron Se | Vorrichtung zur Aerosolerzeugung und Abscheiden einer lichtemittierenden Schicht |
DE102011051261A1 (de) | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu |
DE102011051931A1 (de) | 2011-07-19 | 2013-01-24 | Aixtron Se | Vorrichtung und Verfahren zum Bestimmen des Dampfdrucks eines in einem Trägergasstrom verdampften Ausgangsstoffes |
US9338828B2 (en) * | 2012-10-02 | 2016-05-10 | Illinois Tool Works Inc. | Foam heat exchanger for hot melt adhesive or other thermoplastic material dispensing apparatus |
KR20210074343A (ko) * | 2018-12-04 | 2021-06-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 재료를 증발시키기 위한 증발 장치 및 증발 장치를 이용하여 재료를 증발시키기 위한 방법 |
WO2020244733A1 (en) * | 2019-06-03 | 2020-12-10 | Applied Materials, Inc. | Evaporator arrangement, deposition system, and evaporation method |
WO2021058093A1 (en) * | 2019-09-24 | 2021-04-01 | Applied Materials, Inc. | Evaporation apparatus for evaporating a material to be evaporated, evaporation source, and evaporation method |
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-
2007
- 2007-08-06 US US11/834,039 patent/US8027574B2/en active Active
-
2008
- 2008-08-01 EP EP08794974.9A patent/EP2188409B1/en active Active
- 2008-08-01 WO PCT/US2008/009316 patent/WO2009020562A1/en active Application Filing
- 2008-08-01 JP JP2010519943A patent/JP5485888B2/ja active Active
- 2008-08-05 TW TW097129682A patent/TWI401120B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2009020562A1 (en) | 2009-02-12 |
JP2010535941A (ja) | 2010-11-25 |
EP2188409A1 (en) | 2010-05-26 |
US20090039175A1 (en) | 2009-02-12 |
US8027574B2 (en) | 2011-09-27 |
TW200924855A (en) | 2009-06-16 |
EP2188409B1 (en) | 2013-10-02 |
TWI401120B (zh) | 2013-07-11 |
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