JP5457754B2 - 透過型電極体を用いたプラズマ処理装置 - Google Patents

透過型電極体を用いたプラズマ処理装置 Download PDF

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Publication number
JP5457754B2
JP5457754B2 JP2009184776A JP2009184776A JP5457754B2 JP 5457754 B2 JP5457754 B2 JP 5457754B2 JP 2009184776 A JP2009184776 A JP 2009184776A JP 2009184776 A JP2009184776 A JP 2009184776A JP 5457754 B2 JP5457754 B2 JP 5457754B2
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Japan
Prior art keywords
electrode layer
discharge
plasma
electromagnetic wave
sample
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JP2009184776A
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English (en)
Japanese (ja)
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JP2011040481A (ja
JP2011040481A5 (enExample
Inventor
敬三 鈴木
勝 伊澤
伸幸 根岸
賢悦 横川
賢治 前田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2009184776A priority Critical patent/JP5457754B2/ja
Priority to US12/709,149 priority patent/US20110030899A1/en
Publication of JP2011040481A publication Critical patent/JP2011040481A/ja
Publication of JP2011040481A5 publication Critical patent/JP2011040481A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2009184776A 2009-08-07 2009-08-07 透過型電極体を用いたプラズマ処理装置 Active JP5457754B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009184776A JP5457754B2 (ja) 2009-08-07 2009-08-07 透過型電極体を用いたプラズマ処理装置
US12/709,149 US20110030899A1 (en) 2009-08-07 2010-02-19 Plasma processing apparatus using transmission electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009184776A JP5457754B2 (ja) 2009-08-07 2009-08-07 透過型電極体を用いたプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011040481A JP2011040481A (ja) 2011-02-24
JP2011040481A5 JP2011040481A5 (enExample) 2012-09-20
JP5457754B2 true JP5457754B2 (ja) 2014-04-02

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ID=43533908

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JP2009184776A Active JP5457754B2 (ja) 2009-08-07 2009-08-07 透過型電極体を用いたプラズマ処理装置

Country Status (2)

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US (1) US20110030899A1 (enExample)
JP (1) JP5457754B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5632186B2 (ja) * 2010-04-20 2014-11-26 株式会社日立ハイテクノロジーズ 稠密スロット透過型電極体を用いたプラズマ処理装置
CN103367089B (zh) * 2012-03-30 2016-04-06 中微半导体设备(上海)有限公司 一种具有双外壳的等离子体处理装置
KR20230000480A (ko) * 2021-06-23 2023-01-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
US4776918A (en) * 1986-10-20 1988-10-11 Hitachi, Ltd. Plasma processing apparatus
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
JPH0950898A (ja) * 1995-08-08 1997-02-18 Hitachi Ltd プラズマ処理装置
US6059922A (en) * 1996-11-08 2000-05-09 Kabushiki Kaisha Toshiba Plasma processing apparatus and a plasma processing method
JPH10284299A (ja) * 1997-04-02 1998-10-23 Applied Materials Inc 高周波導入部材及びプラズマ装置
JP3430053B2 (ja) * 1999-02-01 2003-07-28 東京エレクトロン株式会社 プラズマ処理装置
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
US6432819B1 (en) * 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
JP4298876B2 (ja) * 1999-11-30 2009-07-22 東京エレクトロン株式会社 プラズマ処理装置
KR100762754B1 (ko) * 1999-11-30 2007-10-09 동경 엘렉트론 주식회사 플라즈마 처리 장치
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP4366856B2 (ja) * 2000-10-23 2009-11-18 東京エレクトロン株式会社 プラズマ処理装置
US7097782B2 (en) * 2002-11-12 2006-08-29 Micron Technology, Inc. Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly
US7138767B2 (en) * 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using

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Publication number Publication date
JP2011040481A (ja) 2011-02-24
US20110030899A1 (en) 2011-02-10

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