JP5452897B2 - 化学機械研磨のための層状フィラメント格子 - Google Patents
化学機械研磨のための層状フィラメント格子 Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、一般に、化学機械研磨のための研磨パッドの分野に関する。具体的には、本発明は、磁性、光学及び半導体基板を化学機械研磨するために有用である研磨構造を有する研磨パッドに向けられる。
集積回路又は他の電子デバイスの作製では、導電、半導体及び誘電材料の多層を、半導体ウェーハの表面上に堆積させ、そこから除去する。導電、半導体及び誘電材料の薄層は、多くの堆積技術を用いて堆積させることができる。現代のウェーハ加工における一般的な堆積技術は、とりわけ、スパッタリングとしても知られる物理蒸着(PVD)、化学気相蒸着(CVD)、プラズマ促進化学蒸着(PECVD)及び電気化学めっきを含む。一般的な除去技術は、とりわけ、湿式及び乾式の等方性及び異方性エッチングを含む。
本発明の実施態様は、研磨媒体の存在下で、磁性、光学及び半導体基板の少なくとも一つを研磨するために有用である研磨パッドを提供し、研磨フィラメントのベース層上に積層され、研磨フィラメントの各層が、少なくとも一つの下部の研磨フィラメントの上にあり、それに取り付けられている連続して積層された形状を有し、研磨パッドの研磨面に対して平衡である多層の研磨フィラメントを含み、多層の研磨フィラメントの個々の研磨フィラメントが、少なくとも平均3つ以上の研磨フィラメントの上にあり、相互接続された研磨フィラメントの開放型格子構造を有する研磨パッドを形成する。
図面を参照すると、図1は、本発明の研磨パッド104とともに用いるのに好適である、2軸化学機械研磨(CMP)ポリッシャ100を概略的に図示している。一般的に、研磨パッド104は、物品、たとえば半導体ウェーハ112(加工されているか又は加工されていない)又は他の工作物、たとえばとりわけガラス、フラットパネルディスプレイ又は磁気情報記憶ディスクと対面し、研磨媒体120の存在下で工作物の研磨面116の研磨を行うための研磨面110を有する研磨層108を含む。研磨媒体120は、深さ128を有する任意の螺旋溝124を通って、研磨パッドの外周122へと進む。便宜上、以下用語「ウェーハ」は、一般性を失うことなく用いられる。加えて、特許請求の範囲を含む本明細書で用いられるように、用語「研磨媒体」は、粒子を含有する研磨液及び粒子を含有しない液、たとえば研磨剤を含まない、反応性液体の研磨液を含む。
の比率0.5を有し、接触面積率及び流れ面積率の両方が等しく50%に相当する。いくつかの用途では、非常に広い流れ面積を有することが望ましい場合があり、たとえばフィラメント幅対フィラメントピッチの比率が0.2であり、接触面積率20%及び流れ面積率80%に相当する。注目すべきは、20%の接触面積率でさえも、ダイヤモンドコンディショニング後の従来の研磨パッド材料で実現されるよりも著しく大きいことである。
Claims (8)
- 研磨媒体の存在下で、磁性、光学及び半導体基板の少なくとも一つを研磨するために有用である研磨パッドであって、
研磨フィラメントのベース層上に積層され、研磨フィラメントの各層が、少なくとも一つの下部の研磨フィラメントの上にあり、それに取り付けられている連続して積層された形状を有し、研磨パッドの研磨面に対して平行である多層の研磨フィラメントを含み、
多層の研磨フィラメントの個々の研磨フィラメントが、研磨フィラメントのベース層に接続する少なくとも3つ以上の研磨フィラメントの上にあり、流体が複数の方向に流れることを許容するための相互接続された研磨フィラメントの開放型格子構造を有する研磨パッドを形成する、研磨パッド。 - 研磨媒体の存在下で、磁性、光学及び半導体基板の少なくとも一つを研磨するために有用である研磨パッドであって、
研磨フィラメントのベース層上に積層され、研磨フィラメントの各層が、下部の研磨フィラメントの上にあり、研磨フィラメントの間の各交点でそれに取り付けられている連続して積層された形状を有し、研磨パッドの研磨面に対して平行である多層の研磨フィラメントを含み、
多層の研磨フィラメントの個々の研磨フィラメントがポリマー性であり、研磨フィラメントのベース層に接続する少なくとも3つ以上の研磨フィラメントの上にあり、流体が複数の方向に流れることを許容するための相互接続された研磨フィラメントの開放型格子構造を有する研磨パッドを形成する、研磨パッド。 - ポリマー材料が研磨フィラメントの層を形成し、個々の研磨フィラメントが1mm未満の平均幅を有する、請求項1又は2記載の研磨パッド。
- 個々の研磨フィラメントが、研磨パッドの研磨面に直交する垂直側壁を有する、請求項1又は2記載の研磨パッド。
- 個々の研磨フィラメントが、正方形又は矩形の断面を有する、請求項4記載の研磨パッド。
- 研磨パッドが外周を有し、個々の研磨フィラメントが、外周でそれぞれ終端する二つの端を有する、請求項1又は2記載の研磨パッド。
- 開放型格子構造が、互い違いの導電性及び非導電性フィラメントを有する、請求項1又は2記載の研磨パッド。
- ポリマー材料が研磨フィラメントの層を形成し、個々の研磨フィラメントが0.2mm未満の平均幅を有する、請求項1又は2記載の研磨パッド。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/893,495 US7517277B2 (en) | 2007-08-16 | 2007-08-16 | Layered-filament lattice for chemical mechanical polishing |
US11/893,495 | 2007-08-16 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009056586A JP2009056586A (ja) | 2009-03-19 |
JP2009056586A5 JP2009056586A5 (ja) | 2013-07-18 |
JP5452897B2 true JP5452897B2 (ja) | 2014-03-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008209144A Active JP5452897B2 (ja) | 2007-08-16 | 2008-08-15 | 化学機械研磨のための層状フィラメント格子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7517277B2 (ja) |
EP (1) | EP2025459B1 (ja) |
JP (1) | JP5452897B2 (ja) |
KR (1) | KR101539462B1 (ja) |
CN (1) | CN101367202B (ja) |
SG (1) | SG150465A1 (ja) |
TW (1) | TWI446424B (ja) |
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US7828634B2 (en) * | 2007-08-16 | 2010-11-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interconnected-multi-element-lattice polishing pad |
US7530887B2 (en) * | 2007-08-16 | 2009-05-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with controlled wetting |
US8057287B2 (en) * | 2009-08-10 | 2011-11-15 | Hg Tools Co., Ltd. | Abrasive mesh for a powered grinding wheel |
JP2011115935A (ja) * | 2009-10-30 | 2011-06-16 | Toray Ind Inc | 研磨パッドおよび研磨パッドの製造方法 |
US9950408B2 (en) * | 2009-11-02 | 2018-04-24 | Diamabrush Llc | Abrasive pad |
JP2011143533A (ja) * | 2009-12-16 | 2011-07-28 | Toray Ind Inc | 研磨パッドおよび半導体ウエハの研磨方法 |
CN102229105A (zh) * | 2011-06-28 | 2011-11-02 | 清华大学 | 化学机械抛光方法 |
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CN101367202A (zh) | 2009-02-18 |
TWI446424B (zh) | 2014-07-21 |
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TW200910443A (en) | 2009-03-01 |
US7517277B2 (en) | 2009-04-14 |
EP2025459B1 (en) | 2015-06-17 |
KR20090017992A (ko) | 2009-02-19 |
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