JP5451920B1 - Dye-sensitized solar cell element - Google Patents

Abstract

Disclosed is a dye-sensitized solar cell element having excellent durability and conversion efficiency.
A conductive substrate, a current collector provided on the conductive substrate, a counter substrate facing the conductive substrate, a power generation layer provided on the conductive substrate or the counter substrate, a conductive substrate, and The current collector 19 includes an electrolyte disposed between the counter substrate, an annular sealing portion 30A that surrounds the power generation layer 13 and the electrolyte together with the conductive substrate and the counter substrate, and joins the conductive substrate and the counter substrate. Is a dye-sensitized solar cell element provided only outside the sealing portion 30A.
[Selection] Figure 7

Description

  The present invention relates to a dye-sensitized solar cell element.

  As a photoelectric conversion element, a dye-sensitized solar cell element has attracted attention because it is inexpensive and can provide high photoelectric conversion efficiency, and various developments have been made on the dye-sensitized solar cell element.

  As such a dye-sensitized solar cell element, the thing of the following patent document 1 is known, for example. In Patent Document 1 below, an upper electrode and a lower electrode, a power generation layer provided on the upper electrode, an electrolyte provided between the upper electrode and the lower electrode, and an upper electrode and a lower electrode provided around the electrolyte are provided. The upper electrode has a transparent conductive film and a current collector formed on the transparent conductive film, and the current collector is disposed from within the sealing part around the power generation layer. A dye-sensitized solar cell provided to extend outside the cell boundary is disclosed.

JP 2006-244554 A

  In the dye-sensitized solar cell described in Patent Document 1, a current collector is formed in a sealing portion around the power generation layer in order to efficiently collect electrons generated in the power generation layer. If the electric body is formed in the sealing portion, the durability may be lowered, and there is room for improvement in terms of durability. On the other hand, if the width of the sealing portion is simply increased in order to improve the durability, the area of the power generation layer is reduced and the conversion efficiency is reduced.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a dye-sensitized solar cell element having excellent durability and conversion efficiency.

  The present inventors examined the cause of the above problem in the photoelectric conversion device of Patent Document 1. As a result, in the dye-sensitized solar cell of Patent Document 1, since the current collector has a convex shape, a sealing portion is also formed along the convex shape, and sealing performance around the convex portion is achieved. It has been found that there is a risk of decline. In addition, since there is a current collector in the sealing portion, even if the defect is a small defect that does not affect the sealing performance, such as when a slight crack is formed in the sealing portion, the electrolyte and the current collector It was found that the current collector would corrode if touched. Further, in the structure of the dye-sensitized solar cell of Patent Document 1 described above, if the durability is improved with the current collector in the sealing portion, the width of the sealing is inevitably increased, and the area of the power generation layer is reduced. It has been found that the conversion efficiency decreases as a result. Therefore, as a result of intensive studies, the present inventors have found that the above problem can be solved by forming a current collector provided in the vicinity of the power generation layer only on the outside of the sealing portion.

That is, the present invention includes a conductive substrate, a conductive are current collector provided on a substrate, a counter substrate opposed to the conductive substrate, a conductive substrate also generating layer provided on the counter substrate, between the conductive substrate and the counter substrate And at least one dye-sensitized solar cell that has an annular sealing portion that surrounds the power generation layer and the electrolyte together with the conductive substrate and the counter substrate, and joins the conductive substrate and the counter substrate , a backsheet that faces at least one of the dye-sensitized solar cell, in the annular region surrounding the at least one of the dye-sensitized solar cell, and a bonding portion for bonding with the conductive substrate and the back sheet, wherein In the dye-sensitized solar cell element, the adhesive portion is separated from the sealing portion, and the current collector is provided only outside the sealing portion and inside the adhesive portion. Ah .

According to the dye-sensitized solar cell element, and the current collector provided it is only on the outside of the sealing portion, since no current collector in the sealing portion, reduced sealing performance of the sealing portion Can be prevented. Moreover, since the current collector is not provided in the sealing portion, corrosion of the current collector due to the electrolyte can be prevented. Therefore, the dye-sensitized solar cell element of the present invention has excellent durability. Furthermore, since the current collector is provided only on the outer side of the sealing portion, it is not necessary to increase the width of the sealing portion in order to improve the durability. As a result, the area of the power generation layer can be increased , and the conversion efficiency can be increased. Can be improved. Therefore, the dye-sensitized solar cell element of the present invention can have excellent durability and conversion efficiency. In addition, since the current collector is provided outside the sealing portion and only inside the back sheet, the current collector is corroded by moisture in the outside air while preventing the current collector from being corroded by the electrolyte. This can be sufficiently prevented.

The above dye-sensitized solar cell element was more chromatic the dye-sensitized solar cell, the conductive substrate includes an insulating substrate having a conductive film provided on an insulating substrate, increase plurality of dye sensitized solar cell The insulating substrate is a common insulating substrate for a plurality of dye-sensitized solar cells, and the conductive films of the plurality of dye-sensitized solar cells are respectively provided on the common insulating substrate. preferable.

Also Oite this dye-sensitized solar cell element, the current collector, because it is provided only on the outside of the sealing portion, it is possible to have excellent durability and conversion efficiency.

In the dye-sensitized solar cell element, it is preferable that the current collector is provided outside the sealing portion and only between the two adjacent dye-sensitized solar cells.

  In this case, since there is no current collector between two adjacent dye-sensitized solar cells, the area that does not contribute to power generation between the two adjacent dye-sensitized solar cells can be reduced. Since the area of the power generation layer can be increased, the conversion efficiency can be further improved.

In the said dye-sensitized solar cell element , it is preferable to further provide the external connection part for taking out an electric current outside only on the electroconductive board | substrate and the adhesion part outside.

  In this case, since the external connection portion is provided only outside the adhesion portion, it is possible to prevent moisture and the like from entering the inside of the adhesion portion through the inside of the external connection portion.

The dye-sensitized solar cell element is preferably a low-illuminance dye-sensitized solar cell element used in a low-illuminance environment. In a low-light environment, since the generated current is small, even if there is a current collector only on the outside of the sealing part, it is possible to sufficiently prevent an increase in resistance and to have a better conversion efficiency. it can.

  According to the present invention, a dye-sensitized solar cell element having excellent durability and conversion efficiency is provided.

It is sectional drawing which shows 1st Embodiment of the dye-sensitized solar cell element of this invention. It is a top view which shows a part of 1st Embodiment of the dye-sensitized solar cell element of this invention. It is a top view which shows the pattern of the transparent conductive film in the dye-sensitized solar cell element of FIG. It is a top view which shows the 1st integrated sealing part of FIG. It is a top view which shows the 2nd integrated sealing part of FIG. It is sectional drawing along the VI-VI line of FIG. It is a top view which shows the working electrode to which the sealing part and the adhesion part were affixed. It is a top view which shows the 1st integrated sealing part formation body for forming the 1st integrated sealing part of FIG. It is a top view which shows a part of 2nd Embodiment of the dye-sensitized solar cell element of this invention. It is a top view which shows a part of 3rd Embodiment of the dye-sensitized solar cell element of this invention. It is a top view which shows a part of 4th Embodiment of the dye-sensitized solar cell element of this invention.

  Hereinafter, embodiments of the present invention will be described in detail.

<First Embodiment>
First, a first embodiment of the dye-sensitized solar cell element of the present invention will be described in detail with reference to FIGS. FIG. 1 is a sectional view showing a first embodiment of the dye-sensitized solar cell element of the present invention. FIG. 2 is a plan view showing a part of the first embodiment of the dye-sensitized solar cell element of the present invention. 3 is a plan view showing the pattern of the transparent conductive film in the dye-sensitized solar cell module of FIG. 1, FIG. 4 is a plan view showing the first integrated sealing portion of FIG. 1, and FIG. 2 is a plan view showing the integrated sealing portion, FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2, and FIG. 7 is a plan view showing the working electrode to which the sealing portion and the adhesive portion are attached. is there.

  As shown in FIG. 1, a dye-sensitized solar cell module (hereinafter sometimes referred to as “DSC module”) 100 as a dye-sensitized solar cell element includes a plurality (four in FIG. 1) of dye-sensitized solar cells. The battery 50 (hereinafter may be referred to as “DSC”) 50 and a back sheet 80 disposed so as to face the DSC 50. As shown in FIG. 2, the plurality of DSCs 50 are connected in series by a conductive material 60P. Hereinafter, for convenience of description, the four DSCs 50 in the DSC module 100 may be referred to as DSCs 50A to 50D.

  As shown in FIG. 1, each of the plurality of DSCs 50 includes a working electrode 10, a counter electrode 20 that faces the working electrode 10, and an annular sealing portion 30 </ b> A that joins the working electrode 10 and the counter electrode 20. A cell space formed by the working electrode 10, the counter electrode 20, and the annular sealing portion 30A is filled with an electrolyte 40.

  The counter electrode 20 includes a metal substrate 21 and a catalyst layer 22 provided on the working electrode 10 side of the metal substrate 21 to promote a catalytic reaction. In two adjacent DSCs 50, the counter electrodes 20 are separated from each other. In the present embodiment, the counter substrate is constituted by the counter electrode 20.

  As shown in FIGS. 1 and 2, the working electrode 10 includes a transparent conductive substrate 15 having a transparent substrate 11 and a transparent conductive film 12 provided on the transparent substrate 11, and a transparent conductive film 12 of the transparent conductive substrate 15. A plurality of oxide semiconductor layers 13 provided on the substrate and a current collector 19 provided on the transparent conductive film 12. The oxide semiconductor layer 13 is disposed inside the annular sealing portion 30A. The transparent substrate 11 is used as a common transparent substrate for the DSCs 50A to 50D. In the present embodiment, the conductive substrate is constituted by the transparent conductive substrate 15, the power generation layer is constituted by the oxide semiconductor layer 13, the insulating substrate is constituted by the transparent substrate 11, and the transparent substrate A conductive film is constituted by the conductive film 12.

  As shown in FIGS. 2 and 3, the transparent conductive film 12 is composed of transparent conductive films 12 </ b> A to 12 </ b> F that are provided in an insulated state. That is, the transparent conductive films 12A to 12F are arranged with the groove 90 interposed therebetween. Here, the transparent conductive films 12A to 12D constitute the plurality of DSCs 50A to 50D, respectively. The transparent conductive film 12E is arranged so as to be bent along the sealing portion 30A. The transparent conductive film 12F is an annular transparent electrode film 12 for fixing the peripheral edge 80a of the back sheet 80 (see FIG. 1).

  As shown in FIG. 3, each of the transparent conductive films 12 </ b> A to 12 </ b> D has a rectangular main body portion 12 a having a side edge portion 12 b, and an extending portion 12 c that extends laterally from the side edge portion 12 b of the main body portion 12 a. And have.

  As shown in FIG. 2, of the transparent conductive films 12 </ b> A to 12 </ b> D, the extended portion 12 c of the transparent conductive film 12 </ b> C extends from the overhang portion 12 d and the overhang portion 12 d. It has an opposing portion 12e that extends and faces the main body portion 12a of the adjacent DSC 50D with a groove 90 therebetween.

  Also in the DSC 50B, the extending portion 12c of the transparent conductive film 12B has a protruding portion 12d and a facing portion 12e. Also in the DSC 50A, the extending portion 12c of the transparent conductive film 12A has a protruding portion 12d and a facing portion 12e.

  The DSC 50D is already connected to the DSC 50C, and there is no other DSC 50 to be connected. For this reason, in DSC50D, the extension part 12c of transparent conductive film 12D does not have the opposing part 12e. That is, the extending part 12c of the transparent conductive film 12D is constituted only by the projecting part 12d.

  However, the transparent conductive film 12D connects the first current extraction part 12f for extracting the current generated in the DSC module 100 to the outside, the first current extraction part 12f, and the main body part 12a, and the transparent conductive films 12A to 12C. And a connecting portion 12g extending along the side edge portion 12b. The first current extraction portion 12f is disposed around the DSC 50A and on the opposite side of the transparent conductive film 12B with respect to the transparent conductive film 12A.

  On the other hand, the transparent conductive film 12E also has a second current extraction portion 12h for extracting the current generated in the DSC module 100 to the outside. The second current extraction portion 12h is around the DSC 50A and is formed of a transparent conductive film. It is arranged on the opposite side to the transparent conductive film 12B with respect to 12A. The first current extraction portion 12f and the second current extraction portion 12h are arranged adjacent to each other through the groove 90 around the DSC 50A. Here, the groove 90 is formed along the first groove 90A formed along the edge of the main body 12a of the transparent conductive film 12, and the edge of the portion of the transparent conductive film 12 excluding the main body 12a. The second groove 90 </ b> B intersects with the peripheral edge 80 a of the backsheet 80.

  A current collector 19 is provided on the transparent conductive film 12. The current collector 19 includes a connection terminal 16 provided on each extending portion 12c of the transparent conductive films 12A to 12C and the transparent conductive film 12E, and a current collecting wiring 17 provided on the transparent conductive film 12D. Have.

  In the present embodiment, in the transparent conductive films 12A to 12C, at least the conductive material connection portion 16A of the connection terminals 16 is provided on the facing portion 12e of the extension portion 12c, and the main body of the adjacent DSC 50 to be connected. It faces the portion 12a. In the transparent conductive film 12E, the conductive material connection portion 16A of the connection terminals 16 faces the main body portion 12a of the adjacent DSC 50A to be connected. Each connection terminal 16 is connected to the conductive material 60P, and is sealed outside the sealing portion 30A, extending along the sealing portion 30A, and from the conductive material connecting portion 16A to the outside of the sealing portion 30A. And a conductive material non-connecting portion 16B extending along the portion 30A. The width of the conductive material non-connecting portion 16B is narrower than the width of the conductive material connecting portion 16A. Here, the widths of the conductive material connecting portion 16A and the conductive material non-connecting portion 16B are constant. Note that the width of the conductive material connecting portion 16A is the length in the direction orthogonal to the extending direction of the conductive material connecting portion 16A and means the narrowest width among the widths of the conductive material connecting portion 16A. The width of the portion 16B is the length in a direction orthogonal to the extending direction of the conductive material non-connecting portion 16B and means the narrowest width among the widths of the conductive material non-connecting portion 16B.

  And the conductive material connection part 16A of the connection terminal 16 provided on the extension part 12c of the transparent conductive film 12C in the DSC 50C and the metal substrate 21 of the counter electrode 20 in the adjacent DSC 50D are connected via the conductive material 60P. The conductive material 60P is disposed so as to pass over the sealing portion 30A. Similarly, the conductive material connection portion 16A of the connection terminal 16 in the DSC 50B and the metal substrate 21 of the counter electrode 20 in the adjacent DSC 50C are connected via the conductive material 60P, and adjacent to the conductive material connection portion 16A of the connection terminal 16 in the DSC 50A. The metal substrate 21 of the counter electrode 20 in the DSC 50B is connected via a conductive material 60P, and the conductive material connection portion 16A of the connection terminal 16 on the transparent conductive film 12E and the metal substrate 21 of the counter electrode 20 in the adjacent DSC 50A are conductive material 60P. Connected through.

  In the transparent conductive film 12D, the current collector wiring 17 having a lower resistance than the transparent conductive film 12D extends so as to pass through the main body portion 12a, the connection portion 12g, and the current extraction portion 12f. The current collecting wiring 17 is arranged so as not to intersect the connecting portion 14 between the back sheet 80 and the transparent conductive substrate 15.

  As shown in FIG. 7, the connection terminals 16 and the current collector wires 17 that are the current collectors 19 are not provided inside the sealing portion 30A, but are provided only outside the sealing portion 30A. The current collector 19 is not provided between two adjacent DSCs 50. Further, the current collector 19 is formed in an adhesive region surrounded by an adhesive portion 91 described later. In other words, the current collector 19 is formed outside only the sealing portion 30 </ b> A and inside the bonding portion 91.

  Further, external connection portions 18a and 18b for taking out current to the outside are provided on the first current extraction portion 12f and the second current extraction portion 12h, respectively. As shown in FIGS. 1 and 7, the external connection portions 18 a and 18 b are formed outside the bonding portion 91.

  As shown in FIG. 1, the sealing portion 30 </ b> A is connected to the annular first sealing portion 31 </ b> A provided between the transparent conductive substrate 15 and the counter electrode 20, and the first sealing portion 31 </ b> A. It has the 2nd sealing part 32A which covers a part of surface 20b by the side surface and the back sheet 80 side which is the surface opposite to the electrolyte side of the counter electrode 20. FIG. The second sealing portion 32A sandwiches the edge 20a of the counter electrode 20 together with the first sealing portion 31A. As shown in FIG. 4, adjacent first sealing portions 31 </ b> A are integrated to form a first integrated sealing portion 31. In other words, the first integrated sealing portion 31 includes an annular portion (hereinafter referred to as “annular portion”) 31 a that is not provided between two adjacent counter electrodes 20 and two adjacent counter electrodes 20. A portion (hereinafter referred to as a “partition portion”) 31 b that is provided between them and partitions the inner opening 31 c of the annular portion 31 a. Further, as shown in FIG. 5, the second sealing portions 32 </ b> A are integrated between the adjacent counter electrodes 20 to constitute a second integrated sealing portion 32. The second integrated sealing portion 32 is provided between an annular portion (hereinafter referred to as “annular portion”) 32 a that is not provided between two adjacent counter electrodes 20 and two adjacent counter electrodes 20. A portion (hereinafter referred to as a “partition”) 32b that partitions the inner opening 32c of the annular portion 32a, and a protruding portion 32d that is provided continuously on the inner opening 32c side of the annular portion 32a and the partition portion 32b. It consists of

  Moreover, as shown in FIG. 1, between the 1st sealing part 31A and the groove | channel 90 of the transparent conductive substrate 15, it enters into the groove | channel 90 between adjacent transparent conductive films 12A-12F, and an adjacent transparent conductive film An inorganic insulating material 33 is provided so as to straddle 12. More specifically, the inorganic insulating material 33 enters the first groove 90A formed along the edge of the main body 12a of the transparent conductive film 12 in the groove 90, and forms the first groove 90A. The edge of the main body 12a is also covered.

  As shown in FIG. 6, the width P of the bonding portion between the surface of the counter electrode 20 on the transparent conductive substrate 15 side and the partition portion 31 b of the first integrated sealing portion 31 is the transparent conductive substrate 15 of the counter electrode 20. It is narrower than the width Q of the bonding portion between the side surface and the annular portion 31 a of the first integrated sealing portion 31. Furthermore, the width R of the partition part 31 b of the first integrated sealing part 31 is 100% or more and less than 200% of the width T of the annular part 31 a of the first integrated sealing part 31.

  In addition, the second sealing portion 32A is provided on the opposite side of the counter electrode 20 from the main body portion 32e and the main body portion 32e, and on the opposite side of the main body portion 32e from the electrolyte 40. It has the protruding portion 32d that protrudes. Further, the second sealing portions 32 </ b> A further include an adhesive portion 32 f provided between the adjacent counter electrodes 20, thereby forming the second integrated sealing portion 32. The second integrated sealing portion 32 is bonded to the first integrated sealing portion 31 by an adhesive portion 32f. Of the second sealing portion 32A, the main body portion 32e extends beyond the region above the first sealing portion 31A to the region above the electrolyte 40, and the projecting portion 32d has an electrolyte. 40 is provided in a region above 40.

  As shown in FIG. 1, a back sheet 80 is provided on the transparent conductive substrate 15. The back sheet 80 includes a main body composed of a laminate including a weather-resistant layer and a metal layer, and an adhesive layer provided on the common transparent substrate 11 side of the main body and bonded to the transparent conductive substrate 15. Including. The back sheet 80 has the counter electrode 20 between the transparent conductive substrate 15 and is arranged so as to be separated from the counter electrode 20. The adhesive layer adheres to the common transparent substrate 11 side surface of the main body, and may be formed on the peripheral edge of the main body, or is provided on the entire surface of the main body on the DSC 50 side. It may be. The peripheral edge portion 80 a of the back sheet 80 is connected to the transparent conductive films 12 </ b> D, 12 </ b> E, and 12 </ b> F of the transparent conductive film 12 through the connecting portion 14 by the bonding portion 91. Here, the bonding portion 91 is separated from the sealing portion 30 </ b> A of the DSC 50. The connecting portion 14 is also separated from the sealing portion 30A. In addition, the electrolyte 40 is not filled in the space inside the back sheet 80 and outside the sealing portion 30A, that is, the space formed by the back sheet 80, the transparent substrate 11, and the bonding portion 91.

  Further, in the DSC module 100, the distance H 1 between the transparent conductive substrate 15 and the interface between the adhesive portion 91 and the back sheet 80 (hereinafter referred to as “first distance”) is equal to the transparent conductive substrate 15 and the counter electrode. 20, which is larger than a distance H <b> 2 (hereinafter referred to as “second distance”) between the surface 20 and the surface on the backsheet 80 side.

  As shown in FIG. 2, bypass diodes 70A to 70D are connected in parallel to the DSCs 50A to 50D, respectively. Specifically, the bypass diode 70A is fixed on the partition part 32b of the second integrated sealing part 32 between the DSC 50A and the DSC 50B, and the bypass diode 70B is a second integrated between the DSC 50B and the DSC 50C. The bypass diode 70C is fixed on the partition part 32b of the second integrated sealing part 32 between the DSC 50C and the DSC 50D. The bypass diode 70D is fixed on the sealing portion 30A of the DSC 50D. A conductive material 60Q is fixed to the metal substrate 21 of the counter electrode 20 so as to pass through the bypass diodes 70A to 70D. The conductive material 60P branches from the conductive material 60Q between the bypass diodes 70A and 70B, between the bypass diodes 70B and 70C, and between the bypass diodes 70C and 70D, and the conductive material connecting portion 16A on the transparent conductive film 12A, the transparent conductive film The conductive material connecting portion 16A on 12B and the conductive material connecting portion 16A on the transparent conductive film 12C are connected to each other. A conductive material 60P is also fixed to the metal substrate 21 of the counter electrode 20 of the DSC 50A, and the conductive material 60P connects the bypass diode 70A and the conductive material connection portion 16A of the connection terminal 16 on the transparent conductive film 12E. . Further, the bypass diode 70D is connected to the transparent conductive film 12D through the conductive material 60P.

  According to the DSC module 100, the current collector 19 is provided only outside the sealing portion 30A, and the current collector 19 is not included in the sealing portion 30A. Therefore, the sealing performance of the sealing portion 30A Can be prevented from decreasing. Further, since the current collector 19 is not provided in the sealing portion 30A, corrosion of the current collector 19 by the electrolyte 40 can be prevented. Therefore, the DSC module 100 has excellent durability. Furthermore, since the current collector 19 is provided only on the outer side of the sealing portion 30A, it is not necessary to increase the width of the sealing portion 30A in order to improve durability, and as a result, the area of the oxide semiconductor layer 13 can be increased. Conversion efficiency can be improved. Therefore, the DSC module 100 can have excellent durability and conversion efficiency.

  In the DSC module 100, the transparent substrate 11 is a common transparent substrate 11 for the plurality of DSCs 50, and the transparent conductive film 12 is provided on each common transparent substrate 11. Is provided only on the outside of the sealing portion 30A, the DSC module 100 can have excellent durability and conversion efficiency.

  Further, in the DSC module 100, the current collector 19 is provided outside the sealing portion 30 </ b> A and only between the two adjacent DSCs 50. The current collector 19 is also provided between the two adjacent DSCs 50. Therefore, the area that does not contribute to power generation between two adjacent DSCs 50 can be reduced. As a result, since the area of the oxide semiconductor layer 13 can be increased, conversion efficiency can be further improved.

  In the DSC module 100, since the current collector 19 is provided only outside the sealing portion 30A and inside the adhesion portion 91, the current collector 19 is prevented from being corroded by the electrolyte 40, and the current collector 19 is prevented from corroding. It is possible to sufficiently prevent the electric body 19 from being corroded by moisture or the like of the outside air.

  Further, in the DSC module 100, the external connection portion 18 is provided only outside the bonding portion 91, so that moisture and the like can be prevented from entering the bonding portion 91 through the external connection portion 18.

  In the DSC module 100, the second sealing portion 32 </ b> A has a protruding portion 32 d that protrudes on the side opposite to the electrolyte 40 on a part of the portion of the counter electrode 20 that covers the surface 20 b opposite to the electrolyte 40 side. . For this reason, the stress applied to the sealing portion 30A due to a change in internal pressure or an external force can be suppressed by the protruding portion 32d. Specifically, the stress caused by a change in internal pressure or an external force is most applied to the sealing portion 30 </ b> A that is a portion where the transparent conductive substrate 15 and the counter electrode 20 are joined. However, the portion of the second sealing portion 32A that covers the surface 20b opposite to the electrolyte 40 side of the counter electrode 20 has a protruding portion 32d, and the protruding portion 32d becomes a singular point in the sealing portion 30A. The stress applied to the sealing portion 30A by the protruding portion 32d can be sufficiently absorbed. As a result, compared with the case where the area of the second sealing portion 32A covering the surface 20b opposite to the electrolyte 40 side of the counter electrode 20 opposite to the surface 20b is made constant, the sealing portion 30A is destroyed or stressed by stress. It can suppress that peeling etc. occur between 1 sealing part 31A and the counter electrode 20. FIG. For this reason, the DSC module 100 can have excellent durability.

  Further, in the DSC module 100, since the protrusion 32d is provided in the region above the electrolyte 40, the stress generated from the inner direction of the sealing portion 30A toward the sealing portion 30A is applied to the counter electrode 20 and the first sealing. Before being added to the interface of the part 31A and the surface of the first sealing part 31A on the side of the electrolyte 40, it can be absorbed by the protruding part 32d. Thereby, since it becomes difficult to apply stress to the first sealing portion 31A, it is possible to further suppress the destruction of the sealing portion 30A or the separation between the first sealing portion 31A and the counter electrode 20. For this reason, the DSC module 100 can have more excellent durability.

  Further, in the DSC module 100, the inorganic insulating material 33 is provided between the first sealing portion 31A and the transparent conductive substrate 15, and the inorganic insulating material 33 has higher sealing performance than the resin. Compared to the case where the inorganic insulating material 33 is not provided between the first sealing portion 31A and the transparent conductive substrate 15, moisture intrusion from the outside of the sealing portion 30A and leakage of the electrolyte 40 are more effective. Can be suppressed.

  Furthermore, according to the DSC module 100, the bonding portion 91 is separated from the sealing portion 30A of the DSC 50. For this reason, it is sufficiently suppressed that the adhesive portion 91 contracts at a low temperature to pull the sealing portion 30A and an excessive stress is applied to the interface between the sealing portion 30A and the transparent conductive substrate 15 or the counter electrode 20. Is done. In addition, even when the temperature is high, it is sufficiently suppressed that the bonding portion 91 expands and pushes the sealing portion 30A to apply an excessive stress to the interface between the sealing portion 30A and the transparent conductive substrate 15 or the counter electrode 20. Is done. That is, excessive stress is sufficiently suppressed from being applied to the interface between the sealing portion 30 </ b> A and the transparent conductive substrate 15 or the counter electrode 20 at both high and low temperatures. For this reason, the DSC module 100 can have excellent durability.

  In the DSC module 100, the first distance H1 is larger than the second distance H2. For this reason, compared with the case where the 1st distance H1 is below the 2nd distance H2, the back sheet 80 cannot contact the counter electrode 20 easily. For this reason, even if the DSC module 100 is placed in a high temperature environment, the metal layer of the back sheet 80 is sufficiently prevented from connecting the counter electrodes 20 of the plurality of DSCs 50. As described above, according to the DSC module 100, it is possible to sufficiently prevent the occurrence of a short circuit.

  Further, in the DSC module 100, a groove 90 is formed along the edge of the transparent conductive film 12, and the groove 90 is an edge of the main body 12a of the transparent conductive film 12 disposed inside the annular sealing portion 30A. The first groove 90A is formed along the first groove 90A. The inorganic insulating material 33 enters the first groove 90A, and the inorganic insulating material 33 also covers the edge of the main body portion 12a forming the first groove 90A. For this reason, even if a crack is formed along the groove 90 in the transparent substrate 11 and below the groove 90, and the crack is connected to the edge of the main body 12 a, the crack is sealed. Intrusion of moisture from the outside of the stop portion 30 </ b> A is sufficiently suppressed by the inorganic insulating material 33. In particular, in the DSC module 100, since the inorganic insulating material 33 that covers the edge of the main body portion 12a that forms the first groove 90A and enters the first groove 90A is made of an inorganic material, the inorganic insulating material 33 is a resin. High sealing performance compared to For this reason, the DSC module 100 can have excellent durability.

  In the DSC module 100, the sealing portion 30A and the inorganic insulating material 33 are disposed so as to overlap each other. For this reason, compared with the case where the inorganic insulating material 33 is arrange | positioned so that it may not overlap with 30 A of sealing parts, the area of the part which contributes to electric power generation seen from the light-receiving surface side of the DSC module 100 can be increased more. it can. For this reason, an aperture ratio can be improved more.

  In the DSC module 100, the first current extraction unit 12f and the second current extraction unit 12h are disposed around the DSC 50A and on the opposite side of the transparent conductive film 12B from the transparent conductive film 12A. The first current extraction portion 12f and the second current extraction portion 12h of the transparent conductive film 12F are arranged adjacent to each other via the groove 90. Therefore, in the DSC module 100, the external connection portions 18a and 18b can be arranged adjacent to each of the first current extraction portion 12f and the second current extraction portion 12h. Accordingly, the number of connectors for taking out current from the external connection portions 18a and 18b to the outside can be reduced to one. That is, if the first current extraction part 12f is arranged on the opposite side of the transparent conductive film 12C with respect to the transparent conductive film 12D, the first current extraction part 12f and the second current extraction part 12h are arranged greatly apart from each other. Therefore, the external connection portions 18a and 18b are also arranged far apart. In this case, in order to take out the current from the DSC module 100, two connectors are necessary: a connector connected to the external connection portion 18a and a connector connected to the external connection portion 18b. However, according to the DSC module 100, since the external connection portions 18a and 18b can be arranged adjacent to each other, only one connector is required. For this reason, according to the DSC module 100, space saving can be achieved. Further, when the DSC module 100 is used under low illuminance, the generated current is small. Specifically, the generated current is 2 mA or less. Therefore, the second current in which a part of the transparent conductive film 12D of the DSC 50D on one end side of the DSCs 50A and 50D at both ends of the DSCs 50A to 50D is electrically connected to the metal substrate 21 of the counter electrode 20 of the DSC 50A on the other end side. Even if it arrange | positions as the 1st electric current extraction part 12f via the groove | channel 90 next to the extraction part 12h, the fall of the photoelectric conversion performance of the DSC module 100 can fully be suppressed.

  In the DSC module 100, the DSCs 50A to 50D are arranged in a line along the X direction, and the DSC 50A and 50D at both ends of the DSCs 50A to 50D include the transparent conductive film 12D of the DSC 50D at one end of the sealing portion 30A. It has a main body part 12a provided on the inner side, a first current extraction part 12f, and a connection part 12g for connecting the main body part 12a and the first current extraction part 12f. Therefore, DSC 50A and DSC 50D, which are a part of DSCs 50A to 50D, are folded back halfway, and DSC 50A is used to connect two adjacent DSCs 50 to each other as compared to the case where DSC 50A and DSC 50D are arranged adjacent to each other. It becomes possible to further shorten the installation area of the connection terminals 16 provided along the arrangement direction (X direction in FIG. 2) of ˜50D, and to further reduce the space. Also, according to the DSC module 100, when the DSC module 100 is used in a low illumination environment, the generated current is usually small, so the DSC module 100 connects the main body portion 12a and the first current extraction portion 12f. Even if it has the 1st connection part 12g to perform, the fall of a photoelectric conversion characteristic can fully be suppressed.

  Further, in the DSC module 100, the current collecting wiring 17 is arranged so as not to intersect the connecting portion 14 between the adhesive portion 91 and the transparent conductive substrate 15. In general, the current collector wiring 17 is porous and has air permeability, so that a gas such as water vapor can pass through. The current collector wiring 17 is connected to the adhesive portion 91 and the transparent conductive substrate 15. If it is arranged so as not to intersect the connecting portion 14, it prevents water vapor from entering the space formed by the back sheet 80, the transparent conductive substrate 15, and the bonding portion 91 through the current collecting wiring 17. be able to. As a result, the DSC module 100 can have excellent durability. Moreover, since the current collection wiring 17 has resistance lower than transparent conductive film 12D, even if a generated current becomes large, the fall of a photoelectric conversion characteristic can fully be suppressed.

  Furthermore, when the DSC module 100 is placed in an environment where the temperature change is large, the connection terminal 16 is less likely to be peeled off from the extending portion 12 c of the transparent conductive film 12 as the connection terminal 16 is narrower. In that respect, in the DSC module 100, the conductive material non-connecting portion 16B of the connection terminals 16 has a narrower width than the conductive material connecting portion 16A connected to the conductive material 60P. For this reason, the conductive material non-connecting portion 16 </ b> B of the connection terminal 16 is difficult to peel off from the extending portion 12 c of the transparent conductive film 12. Therefore, even if the conductive material connecting portion 16A is peeled off from the extending portion 12c of the transparent conductive film 12, the conductive material non-connecting portion 16B is not peeled off from the transparent conductive film 12, and the connection to the transparent conductive film 12 can be maintained. It becomes possible. Even if the conductive material connecting portion 16A is peeled off from the extending portion 12c of the transparent conductive film 12, the DSC module 100 can operate normally. Therefore, according to the DSC module 100, connection reliability can be improved. In addition, the conductive material 60P connected to the metal substrate 21 of the counter electrode 20 in one DSC 50 of the two adjacent DSCs 50 is connected to the conductive material connection portion 16A on the extending portion 12c in the other DSC 50, and is connected to the conductive material. The part 16A is provided outside the sealing part 30A on the extending part 12c. That is, two adjacent DSCs 50 are connected to each other outside the sealing portion 30A. For this reason, according to the DSC module 100, it is possible to improve the aperture ratio.

  Further, in the DSC module 100, in the DSC 50 connected to the adjacent DSC 50 among the DSCs 50A to 50D, the extension part 12c extends from the main body part 12a to the side and extends from the extension part 12d to the adjacent one. The DSC 50 has a facing portion 12e facing the main body portion 12a, and at least the conductive material connecting portion 16A of the connection terminals 16 is provided on the facing portion 12e.

  In this case, since at least the conductive material connection portion 16A of the connection terminals 16 is provided on the facing portion 12e facing the main body portion 12a of the adjacent DSC 50, at least the conductive material connection portion 16A of the connection terminals 16 is Unlike the case where it is not provided on the facing portion 12e facing the main body portion 12a of the adjacent DSC 50, the conductive material 60P connected to the conductive material connecting portion 16A crosses the metal substrate 21 of the counter electrode 20 of the adjacent DSC 50. Can be sufficiently prevented. As a result, it is possible to sufficiently prevent a short circuit between adjacent DSCs 50.

  In the DSC module 100, the conductive material connecting portion 16A and the conductive material non-connecting portion 16B are both arranged along the sealing portion 30A. For this reason, compared with the case where the electrically conductive material connection part 16A and the electrically conductive material non-connection part 16B are arranged along the direction away from the sealing part 30A, the space required for the connection terminal 16 can be omitted.

  Further, in the DSC module 100, the width P of the bonding portion between the surface of the counter electrode 20 on the transparent conductive substrate 15 side and the partition portion 31 b of the first integrated sealing portion 31 is the transparent conductive substrate 15 of the counter electrode 20. It is narrower than the width Q of the bonding portion between the side surface and the annular portion 31 a of the first integrated sealing portion 31. For this reason, the aperture ratio in the DSC module 100 can be improved more sufficiently. In the DSC module 100, the adjacent first sealing portions 31 </ b> A and the adjacent second sealing portions 32 </ b> A are integrated between the adjacent counter electrodes 20. Here, if the adjacent first sealing portions 31 </ b> A are not integrated, two adjacent sealing portions are exposed to the atmosphere between the adjacent DSCs 50. On the other hand, in the DSC module 100, since the adjacent first sealing portions 31A are integrated, there is one sealing portion exposed to the atmosphere between the adjacent DSCs 50. That is, since the 1st integrated sealing part 31 is comprised by the annular part 31a and the partition part 31b, the sealing part exposed with respect to air | atmosphere between adjacent DSC50 is the partition part 31b. There is only one place. Further, since the first sealing portions 31A are integrated with each other, the penetration distance of moisture and the like from the atmosphere to the electrolyte 40 is extended. For this reason, it is possible to sufficiently reduce the amount of moisture and air entering from the outside of the DSC 50 between the adjacent DSCs 50. That is, the sealing ability of the DSC module 100 can be sufficiently improved. Further, according to the DSC module 100, the adjacent first sealing portions 31A are integrated. Therefore, the width P of the bonding portion between the surface of the counter electrode 20 on the transparent conductive substrate 15 side and the partition portion 31b of the first integrated sealing portion 31 is the same as the surface of the counter electrode 20 on the transparent conductive substrate 15 side. Even if it is narrower than the width Q of the bonding portion between the first integrated sealing portion 31 and the annular portion 31a, a sufficient sealing width can be secured in the partition portion 31b. That is, according to the DSC module 100, the adhesive strength between the first sealing portion 31A and the transparent conductive substrate 15 and the adhesive strength between the first sealing portion 31A and the counter electrode 20 are sufficiently increased while improving the aperture ratio. It is possible to make it larger. As a result, the aperture ratio can be improved, and when the DSC module 100 is used at a high temperature, the electrolyte 40 expands and an excessive stress is applied from the inside to the outside of the first sealing portion 31A. In addition, peeling of the first sealing portion 31A from the transparent conductive substrate 15 and the counter electrode 20 can be sufficiently suppressed, and excellent durability can be achieved.

  Furthermore, in the DSC module 100, the width R of the counter electrode 20 and the partition portion 31b of the first integrated sealing portion 31 is 100% or more and less than 200% of the width T of the annular portion 31a of the first integrated sealing portion 31. It has become. In this case, in the partition part 31b of the first integrated sealing part 31, the width of the partition part 31b is 100% or more of the width T of the annular part 31a. In comparison with the case where the width R of the partition portion 31b is less than 100% of the width T of the annular portion 31a, the penetration distance of moisture and the like from the atmosphere to the electrolyte 40 is further extended. For this reason, it can suppress more fully that a water | moisture content penetrate | invades from the exterior through the partition part 31b between adjacent DSC50. On the other hand, compared with the case where the width R of the partition part 31b exceeds 200% of the width T of the annular part 31a, the aperture ratio can be further improved.

  In the DSC module 100, the second sealing portion 32A is bonded to the first sealing portion 31A, and the edge portion 20a of the counter electrode 20 is sandwiched between the first sealing portion 31A and the second sealing portion 32A. Has been. For this reason, even if the stress in the direction away from the working electrode 10 acts on the counter electrode 20, the separation is sufficiently suppressed by the second sealing portion 32A. Further, since the partition portion 32b of the second integrated sealing portion 32 is bonded to the first sealing portion 31A through the gap S between the adjacent counter electrodes 20, the counter electrodes 20 of the adjacent DSCs 50 are in contact with each other. Is reliably prevented.

  Further, the DSC module 100 is preferably a low illuminance dye-sensitized solar cell module used in a low illuminance environment. In a low illuminance environment, since the generated current is small, even if there is a current collector only outside the sealing portion 30A, it is possible to sufficiently prevent an increase in resistance and to have a better conversion efficiency. Can do.

  Here, the low illumination environment means that the illumination is 20000 lux or less, and the DSC module 100 is more preferably used in an environment of 10000 lux or less. In addition, the low-illuminance dye-sensitized solar cell is one in which the concentration of at least one of the redox couple contained in the electrolyte 40 is 0.006 mol / liter or less.

  Next, the working electrode 10, the current collector 19, the external connection portion 18, the coupling portion 14, the photosensitizing dye, the counter electrode 20, the sealing portion 30A, the inorganic insulating material 33, the electrolyte 40, the conductive materials 60P and 60Q, and the back sheet. 80 will be described in detail.

(Working electrode)
The material which comprises the transparent substrate 11 should just be a transparent material, for example, As such a transparent material, glass, such as borosilicate glass, soda lime glass, white plate glass, quartz glass, polyethylene terephthalate (PET), for example , Polyethylene naphthalate (PEN), polycarbonate (PC), and polyethersulfone (PES). The thickness of the transparent substrate 11 is appropriately determined according to the size of the DSC module 100 and is not particularly limited, but may be in the range of 50 to 10,000 μm, for example.

Examples of materials included in the transparent conductive film 12 include tin-doped indium oxide (Indium-Tin-Oxide: ITO), tin oxide (SnO ₂ ), and fluorine-doped tin oxide (Fluorine-doped-Tin-Oxide: FTO). Examples include conductive metal oxides. The transparent conductive film 12 may be a single layer or a laminate of a plurality of layers containing different conductive metal oxides. When the transparent conductive film 12 is composed of a single layer, the transparent conductive film 12 preferably includes FTO because it has high heat resistance and chemical resistance. The transparent conductive film 12 may further include glass frit. The thickness of the transparent conductive film 12 may be in the range of 0.01 to 2 μm, for example.

Moreover, the resistance value of the connection part 12g of transparent conductive film 12D among the transparent conductive films 12 is not particularly limited, but is preferably equal to or less than the resistance value represented by the following formula (1).
Resistance value = number of DSCs 50 connected in series × 120Ω (1)

  In this case, compared with the case where the resistance value of the connection part 12g exceeds the resistance value represented by said Formula (1), the performance fall of the DSC module 100 can fully be suppressed. In the present embodiment, since the number of DSCs 50 is 4, the resistance value represented by the above formula (1) is 480Ω, and thus the resistance value of the connecting portion 12g is preferably 480Ω or less.

The oxide semiconductor layer 13 is composed of oxide semiconductor particles. Examples of the oxide semiconductor particles include titanium oxide (TiO ₂ ), silicon oxide (SiO ₂ ), zinc oxide (ZnO), tungsten oxide (WO ₃ ), niobium oxide (Nb ₂ O ₅ ), and strontium titanate (SrTiO ₃ ). , Tin oxide (SnO ₂ ), indium oxide (In ₃ O ₃ ), zirconium oxide (ZrO ₂ ), thallium oxide (Ta ₂ O ₅ ), lanthanum oxide (La ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ) , Holmium oxide (Ho ₂ O ₃ ), bismuth oxide (Bi ₂ O ₃ ), cerium oxide (CeO ₂ ), aluminum oxide (Al ₂ O ₃ ), or two or more thereof.

  The oxide semiconductor layer 13 is usually composed of an absorption layer for absorbing light, but may be composed of an absorption layer and a reflective layer that reflects light transmitted through the absorption layer and returns it to the absorption layer.

  The thickness of the oxide semiconductor layer 13 may be, for example, 0.5 to 50 μm.

(Current collector)
The connection terminal 16 and the current collector wiring 17 that are the current collector 19 include a metal material. Examples of the metal material include silver, copper, and indium. You may use these individually or in combination of 2 or more types.

  Moreover, although the connection terminal 16 may be comprised with the material same as the electrically conductive material 60P, or may be comprised with a different material, it is preferable that it is comprised with the same material.

  In this case, since the connection terminal 16 and the conductive material 60P are made of the same material, the adhesion between the connection terminal 16 and the conductive material 60P can be more sufficiently improved. For this reason, the connection reliability in the DSC module 100 can be further improved.

  In the connection terminal 16, the width of the conductive material non-connecting portion 16B is not particularly limited as long as it is smaller than the width of the conductive material connecting portion 16A, but is preferably 1/2 or less of the width of the conductive material connecting portion 16A.

  In this case, the connection reliability in the DSC module 100 can be further improved as compared with the case where the width of the conductive material non-connecting portion 16B exceeds 1/2 of the width of the conductive material connecting portion 16A.

  The width of the conductive material connecting portion 16A is not particularly limited, but is preferably 0.5 to 5 mm, and more preferably 0.8 to 2 mm.

(External connection)
The external connection portion 18 includes a metal material. Examples of the metal material include silver, copper, and indium. You may use these individually or in combination of 2 or more types.

(Connecting part)
The material constituting the connecting portion 14 is not particularly limited as long as the bonding portion 91 and the transparent conductive film 12 can be bonded. Examples of the material constituting the connecting portion 14 include a glass frit and a sealing portion. A resin material similar to the resin material used for 31A can be used. Especially, it is preferable that the connection part 14 is a glass frit. Since the glass frit has a higher sealing ability than the resin material, it is possible to effectively suppress the intrusion of moisture and the like from the outside of the back sheet 80 and the adhesive portion 91.

(Photosensitizing dye)
Examples of the photosensitizing dye include a ruthenium complex having a ligand containing a bipyridine structure, a terpyridine structure, and the like, and organic dyes such as porphyrin, eosin, rhodamine, and merocyanine. When used in low-light environments such as indoor light, indoor light is different from sunlight, and the wavelength of light is biased to the short wavelength side, so ruthenium having a ligand containing a bipyridine structure that can efficiently absorb short wavelengths. It is preferable to use a complex.

(Counter electrode)
As described above, the counter electrode 20 includes the metal substrate 21 and the conductive catalyst layer 22 that is provided on the working electrode 10 side of the metal substrate 21 and promotes the reduction reaction on the surface of the counter electrode 20. The counter electrode 20 preferably has flexibility. In this case, even if a stress generated from the inside of the sealing portion 30A toward the sealing portion 30A occurs, the counter electrode 20 can be deformed because it has flexibility, and a part of the stress can be absorbed by the counter electrode 20, Further, it is possible to suppress the destruction of the sealing portion 30 </ b> A and the separation between the first sealing portion 31 </ b> A and the counter electrode 20.

  The metal substrate 21 is made of a corrosion-resistant metal material such as titanium, nickel, platinum, molybdenum, tungsten, aluminum, and stainless steel. The thickness of the metal substrate 21 is appropriately determined according to the size of the DSC module 100 and is not particularly limited, but may be, for example, 0.005 to 0.1 mm.

  The catalyst layer 22 is composed of platinum, a carbon-based material, a conductive polymer, or the like. Here, carbon nanotubes are suitably used as the carbon-based material.

(Sealing part)
The sealing unit 30A includes a first sealing unit 31A and a second sealing unit 32A.

  Examples of the material constituting the first sealing portion 31A include a modified polyolefin resin containing, for example, an ionomer, an ethylene-vinyl acetic anhydride copolymer, an ethylene-methacrylic acid copolymer, an ethylene-vinyl alcohol copolymer, and ultraviolet curing. Examples thereof include resins and resins such as vinyl alcohol polymers. The first sealing portion 31A may contain an inorganic material such as glass or metal.

  The thickness of 31A of 1st sealing parts is 40-90 micrometers normally, Preferably it is 60-80 micrometers.

  The width P of the bonded portion between the counter electrode 20 and the partition portion 31b is preferably 25% or more and less than 100% of the width Q of the bonded portion between the counter electrode 20 and the annular portion 31a of the first integrated sealing portion 31. In this case, compared with the case where the width | variety P of an adhesion part is less than 25% of the width | variety Q of an adhesion part, it becomes possible to have more outstanding durability. The width P of the bonding portion is more preferably 30% or more of the width Q of the bonding portion, and further preferably 40% or more.

  In the DSC module 100, the width R of the partition part 31b of the first integrated sealing part 31 is preferably 100% or more and less than 200% of the width T of the annular part 31a of the first integrated sealing part 31. 120 to 180% is more preferable.

  In this case, a large aperture ratio and excellent durability can be balanced.

  As the material constituting the second sealing portion 32A, for example, an ionomer, an ethylene-vinyl acetic anhydride copolymer, an ethylene-methacrylic acid copolymer, an ethylene-vinyl alcohol copolymer, as in the first sealing portion 31A. Examples thereof include resins such as modified polyolefin resins, UV curable resins, and vinyl alcohol polymers. The second sealing portion 32A may contain an inorganic material such as glass or metal.

  The second sealing portion 32A is preferably made of the same material as the first sealing portion 31A. In this case, the first sealing portion 31A and the second sealing portion 32A can be firmly bonded to eliminate the interface between the first sealing portion 31A and the second sealing portion 32A. It is possible to prevent moisture from entering from the outside.

  The thickness of the main body portion 32e in the second sealing portion 32A is usually 20 to 40 μm, preferably 30 to 40 μm. On the other hand, the thickness of the protruding portion 32d may be thicker than the main body portion 32e, but is usually 40 to 150 μm, and preferably 50 to 120 μm. Moreover, it is preferable that the difference of the thickness of the protrusion part 32d and the thickness of the main-body part 32e is 20-100 micrometers.

(Insulating material)
Glass frit etc. are mentioned as a material which comprises the inorganic insulating material 33. FIG. The thickness of the inorganic insulating material 33 is usually 10 to 100 μm, preferably 15 to 50 μm.

(Electrolytes)
The electrolyte 40 contains a redox couple such as I ⁻ / I ₃ ^— and an organic solvent. As an organic solvent, acetonitrile, methoxyacetonitrile, methoxypropionitrile, propionitrile, ethylene carbonate, propylene carbonate, diethyl carbonate, γ-butyrolactone, valeronitrile, pivalonitrile, glutaronitrile, methacrylonitrile, isobutyronitrile, Phenylacetonitrile, acrylonitrile, succinonitrile, oxalonitrile, pentanitrile, adiponitrile and the like can be used. Examples of the redox pair include I ⁻ / I ₃ ^— and redox pairs such as bromine / bromide ions, zinc complexes, iron complexes, and cobalt complexes. The electrolyte 40 may use an ionic liquid instead of the organic solvent. As the ionic liquid, for example, a known iodine salt such as a pyridinium salt, an imidazolium salt, or a triazolium salt, and a room temperature molten salt that is in a molten state near room temperature is used. Examples of such room temperature molten salts include 1-hexyl-3-methylimidazolium iodide, 1-ethyl-3-propylimidazolium iodide, dimethylimidazolium iodide, ethylmethylimidazolium iodide, and dimethylpropyl. Imidazolium iodide, butylmethylimidazolium iodide, or methylpropyl imidazolium iodide is preferably used.

  In addition, the electrolyte 40 may use a mixture of the ionic liquid and the organic solvent instead of the organic solvent.

An additive can be added to the electrolyte 40. As the _{additive, LiI, I 2, 4-} t- butylpyridine, guanidinium thiocyanate, 1-methylbenzimidazole, 1-butyl-benzimidazole and the like.

Further, as the electrolyte 40, a nano-composite gel electrolyte, which is a pseudo-solid electrolyte formed by kneading nanoparticles such as SiO ₂ , TiO ₂ , carbon nanotubes, etc. into the electrolyte, may be used, and polyvinylidene fluoride may be used. Alternatively, an electrolyte gelled with an organic gelling agent such as a polyethylene oxide derivative or an amino acid derivative may be used.

The electrolyte 40 includes an oxidation-reduction pair consisting of I ⁻ / I ₃ ^—, and the concentration of I ₃ ⁻ is preferably 0.006 mol / liter or less, and is 0 to 6 × 10 ⁻⁶ mol / liter. More preferably, it is more preferably 0-6 × 10 ⁻⁸ mol / liter. In this case, since the concentration of I ₃ ⁻ carrying electrons is low, the leakage current can be further reduced. In particular, in a dye-sensitized solar cell for low illuminance, since the generated current is small, even if the concentration of I ₃ ⁻ transporting electrons is lowered, it is between the counter electrode 20 and the electrolyte 40 and between the electrolyte 40 and the dye. The internal resistance does not increase, and the leakage current can be further reduced by lowering the concentration of I ₃ ⁻ . For this reason, since an open circuit voltage can be increased more, a photoelectric conversion characteristic can be improved more.

(Conductive material)
For example, metal films are used as the conductive materials 60P and 60Q. As a metal material constituting the metal film, for example, silver or copper can be used.

(Back sheet)
As described above, the backsheet 80 includes a main body portion including a weather resistant layer and a metal layer, and an adhesive layer provided on the DSC 50 side surface of the main body portion and bonded to the transparent conductive substrate 15.

  The weather resistant layer may be made of, for example, polyethylene terephthalate or polybutylene terephthalate.

  The thickness of the weather resistant layer may be, for example, 50 to 300 μm.

  The metal layer should just be comprised with the metal material containing aluminum, for example. The metal material is usually composed of aluminum alone, but may be an alloy of aluminum and another metal. Examples of other metals include copper, manganese, zinc, magnesium, lead, and bismuth. Specifically, 1000 series aluminum obtained by adding a trace amount of other metals to 98% or more pure aluminum is desirable. This is because the 1000 series aluminum is cheaper and more workable than other aluminum alloys.

  Although the thickness of a metal layer is not specifically limited, For example, what is necessary is just 12-30 micrometers.

  The main body may further include a resin layer. Examples of the material constituting the resin layer include butyl rubber, nitrile rubber, thermoplastic resin, and the like. These can be used alone or in combination of two or more. The resin layer may be formed on the entire surface of the metal layer opposite to the weather-resistant layer, or may be formed only on the peripheral edge.

  Examples of the material constituting the adhesive layer include butyl rubber, nitrile rubber, and thermoplastic resin. These can be used alone or in combination of two or more.

  The thickness of the adhesive layer may be, for example, 300 to 1000 μm.

  The thickness of the bonding portion 91 is not particularly limited as long as the first distance H1 can be larger than the second distance H2, but is in a range of 100 to 1000 μm, for example.

  The ratio of the first distance H1 to the second distance H2 (H1 / H2) is preferably 1.1-15. In this case, the DSC 50 is less likely to be destroyed because the DSC 50 is less susceptible to external force than when the ratio is outside the above range.

  Next, a method for manufacturing the DSC module 100 will be described with reference to FIGS. 3, 7, and 8. FIG. 8 is a plan view showing a first integrated sealing portion forming body for forming the first integrated sealing portion of FIG. 4.

  First, a laminate in which a transparent conductive film is formed on one transparent substrate 11 is prepared.

  As a method for forming the transparent conductive film, a sputtering method, a vapor deposition method, a spray pyrolysis (SPD) method, a CVD method, or the like is used.

  Next, as shown in FIG. 3, grooves 90 are formed in the transparent conductive film, and transparent conductive films 12 </ b> A to 12 </ b> F that are disposed in an insulating state with the grooves 90 interposed therebetween are formed. Specifically, the four transparent conductive films 12A to 12D corresponding to the DSCs 50A to 50D are formed to have a rectangular main body portion 12a and an extension portion 12c. At this time, for the transparent conductive films 12A to 12C corresponding to the DSCs 50A to 50C, the extending part 12c extends not only from the overhanging part 12d but also from the overhanging part 12d to face the main body part 12a of the adjacent DSC 50. It is formed so that it may also have. The transparent conductive film 12D includes not only the rectangular main body 12a and the overhanging portion 12d, but also the first current extraction portion 12f and a connection portion 12g that connects the first current extraction portion 12f and the main body portion 12a. To form. At this time, the first current extraction portion 12f is formed to be disposed on the opposite side of the transparent conductive film 12B with respect to the transparent conductive film 12A. Further, the transparent conductive film 12E is formed so that the second current extraction portion 12h is formed. At this time, the second current extraction portion 12h is disposed on the opposite side of the transparent conductive film 12A with respect to the transparent conductive film 12A, and is disposed adjacent to the first current extraction portion 12f via the groove 90. Form.

The groove 90 can be formed by a laser scribing method using, for example, a YAG laser or a CO ₂ laser as a light source.

  Thus, a transparent conductive substrate 15 formed by forming the transparent conductive film 12 on the transparent substrate 11 is obtained.

  Next, the precursor of the connection terminal 16 composed of the conductive material connecting portion 16A and the conductive material non-connecting portion 16B is formed on the extending portion 12c of the transparent conductive films 12A to 12C. Specifically, the precursor of the connection terminal 16 is formed so that the conductive material connection portion 16A is provided on the facing portion 12e. Also, the precursor of the connection terminal 16 is formed on the transparent conductive film 12E. The precursor of the conductive material non-connecting portion 16B is formed to be narrower than the width of the conductive material connecting portion 16A. The precursor of the connection terminal 16 can be formed, for example, by applying a silver paste and drying it.

  Furthermore, the precursor of the current collection wiring 17 is formed on the connection part 12g of transparent conductive film 12D. The precursor of the current collecting wiring 17 can be formed, for example, by applying a silver paste and drying it.

  Further, precursors of external connection portions 18a and 18b for taking out current to the outside are formed on the first current extraction portion 12f and the second current extraction portion 12h of the transparent conductive film 12A, respectively. The precursor of the external connection terminal can be formed, for example, by applying a silver paste and drying it.

  Furthermore, the precursor of the oxide semiconductor layer 13 is formed on each main body part 12a of the transparent conductive films 12A to 12D. The precursor of the oxide semiconductor layer 13 can be formed by printing a porous oxide semiconductor layer forming paste containing oxide semiconductor particles and then drying the paste.

  The oxide semiconductor layer forming paste contains a resin such as polyethylene glycol and a solvent such as terpineol in addition to the oxide semiconductor particles.

  As a method for printing the oxide semiconductor layer forming paste, for example, a screen printing method, a doctor blade method, a bar coating method, or the like can be used.

  Furthermore, it is a region where the first integrated sealing portion 31 is formed so as to enter the first groove 90A formed along the edge portion of the main body portion 12a and also cover the edge portion of the main body portion 12a. Then, a precursor of the inorganic insulating material 33 is formed. The inorganic insulating material 33 can be formed by applying and drying a paste containing glass frit, for example.

  Further, in order to fix the back sheet 80, in the same manner as the inorganic insulating material 33, the adhesive portion 91 is formed in a region surrounding the inorganic insulating material 33 and the transparent conductive film 12D, the transparent conductive film 12E, A precursor of the annular connecting portion 14 is formed so as to pass through the transparent conductive film 12F.

  Finally, the precursor of the connection terminal 16, the precursor of the current collector wiring 17, the precursor of the external connection portion 18, the precursor of the inorganic insulating material 33, the precursor of the coupling portion 14, and the precursor of the oxide semiconductor layer 13 The connection terminal 16, the current collection wiring 17, the external connection part 18, the inorganic insulating material 33, the connection part 14, and the oxide semiconductor layer 13 are formed by baking collectively.

  At this time, the firing temperature varies depending on the types of oxide semiconductor particles and glass frit, but is usually 350 to 600 ° C., and the firing time also varies depending on the types of oxide semiconductor particles and glass frit, but usually 1 to 5 times. It's time.

  In this way, the working electrode 10 in which the connecting portion 14 for fixing the inorganic insulating material 33 and the back sheet 80 is formed is obtained.

  Next, a photosensitizing dye is supported on the oxide semiconductor layer 13 of the working electrode 10. For this purpose, the working electrode 10 is immersed in a solution containing a photosensitizing dye, the photosensitizing dye is adsorbed on the oxide semiconductor layer 13, and then the excess photosensitizer is added with the solvent component of the solution. The photosensitizing dye may be adsorbed to the oxide semiconductor layer 13 by washing away the dye and drying it. However, even if the photosensitizing dye is adsorbed to the oxide semiconductor layer 13 by applying a solution containing the photosensitizing dye to the oxide semiconductor layer 13 and then drying the solution, the photosensitizing dye can be absorbed into the oxide semiconductor layer 13. 13 can be carried.

  Next, the electrolyte 40 is disposed on the oxide semiconductor layer 13.

  Next, as shown in FIG. 8, a first integrated sealing portion forming body 131 for forming the first integrated sealing portion 31 is prepared. The first integrated sealing portion forming body 131 prepares one sealing resin film made of the material constituting the first integrated sealing portion 31, and the sealing resin film according to the number of DSCs 50. It can be obtained by forming a rectangular opening 131a. The first integrated sealing portion forming body 131 has a structure in which a plurality of first sealing portion forming bodies 131A are integrated.

  Then, the first integrated sealing portion forming body 131 is adhered on the working electrode 10. At this time, the first integrated sealing portion forming body 131 is bonded to the working electrode 10 so as to overlap the inorganic insulating material 33. The first integrated sealing portion forming body 131 can be adhered to the working electrode 10 by heating and melting the first integrated sealing portion forming body 131. The first integrated sealing portion forming body 131 is adhered to the working electrode 10 so that the main body portion 12 a of the transparent conductive film 12 is disposed inside the first integrated sealing portion forming body 131.

  On the other hand, the same number of counter electrodes 20 as the number of DSCs 50 are prepared.

  The counter electrode 20 can be obtained by forming a conductive catalyst layer 22 that promotes the reduction reaction on the surface of the counter electrode 20 on the metal substrate 21.

  Next, another first integrated sealing portion forming body 131 described above is prepared. And each of the some counter electrode 20 is bonded together so that each opening 131a of the 1st integrated sealing part formation body 131 may be plugged up.

  Next, the first integrated sealing portion forming body 131 bonded to the counter electrode 20 and the first integrated sealing portion forming body 131 bonded to the working electrode 10 are superposed to form a first integrated sealing portion forming body. 131 is heated and melted under pressure. Thus, the first integrated sealing portion 31 is formed between the working electrode 10 and the counter electrode 20. At this time, the width P of the bonding portion between the surface of the counter electrode 20 on the transparent conductive substrate 15 side and the partition portion 31b of the first integrated sealing portion 31 is equal to the surface of the counter electrode 20 on the transparent conductive substrate 15 side. The first integrated sealing portion 31 is formed so as to be narrower than the width Q of the bonding portion between the first integrated sealing portion 31 and the annular portion 31a. Further, the first integrated sealing is performed such that the width R of the partition portion 31b of the first integrated sealing portion 31 is not less than 100% and less than 200% of the width T of the annular portion 31a of the first integrated sealing portion 31. A portion 31 is formed. The formation of the first integrated sealing portion 31 may be performed under atmospheric pressure or under reduced pressure, but is preferably performed under reduced pressure.

  Next, the 2nd integrated sealing part 32 is prepared (refer FIG. 5). The second integrated sealing portion 32 has a structure formed by integrating a plurality of second sealing portions 32A. The second integrated sealing portion 32 can be obtained by preparing one sealing resin film and forming the rectangular inner openings 32c corresponding to the number of DSCs 50 in the sealing resin film. . The second integrated sealing portion 32 is bonded to the counter electrode 20 so as to sandwich the edge portion 20 a of the counter electrode 20 together with the first integrated sealing portion 31. The adhesion of the second integrated sealing portion 32 to the counter electrode 20 can be performed by heating and melting the second integrated sealing portion 32.

  When the second integrated sealing portion 32 is heated and melted, the protruding portion 32d is provided with irregularities in advance on the heating jig that is pressed against the second integrated sealing portion 32 to form heat, thereby forming the protruding portion 32d. A projecting portion can be formed by pressing a concave portion on a desired portion.

  Examples of the sealing resin film include ionomers, ethylene-vinyl acetic anhydride copolymers, modified polyolefin resins containing ethylene-methacrylic acid copolymers, ethylene-vinyl alcohol copolymers, ultraviolet curable resins, and vinyls. Examples thereof include resins such as alcohol polymers. The constituent material of the sealing resin film for forming the second integrated sealing portion 32 is the same as the constituent material of the sealing resin film for forming the first integrated sealing portion 31. It is preferable. In this case, the first sealing portion 31A and the second sealing portion 32A are firmly bonded, and the interface between the first sealing portion 31A and the second sealing portion 32A can be eliminated, so that electrolyte leaks from the interface. Intrusion of moisture from the outside can be prevented.

  Next, the bypass diodes 70A, 70B, and 70C are fixed to the partition portion 32b of the second sealing portion 32A. The bypass diode 70D is also fixed on the sealing portion 30A of the DSC 50D.

  Then, the conductive material 60Q is fixed to the metal substrate 21 of the counter electrode 20 of the DSCs 50B to 50C so as to pass through the bypass diodes 70A to 70D. Furthermore, each conductive material 60Q between the bypass diodes 70A and 70B, between the bypass diodes 70B and 70C, between the bypass diodes 70C and 70D, the conductive material connection portion 16A on the transparent conductive film 12A, and the conductive material connection portion on the transparent conductive film 12B. A conductive material 60P is formed so as to connect 16A and the conductive material connecting portion 16A on the transparent conductive film 12C. Further, the conductive material 60P is fixed to the metal substrate 21 of the counter electrode 20 of the DSC 50A so as to connect the conductive material connecting portion 16A on the transparent conductive film 12E and the bypass diode 70A. Further, the transparent conductive film 12D and the bypass diode 70A are connected by the conductive material 60P.

  At this time, as the conductive material 60P, a paste containing a metal material constituting the conductive material 60P is prepared, and this paste is applied from the counter electrode 20 to the conductive material connection portion 16A of the connection terminal 16 of the adjacent DSC 50 and cured. . For the conductive material 60Q, a paste containing a metal material constituting the conductive material 60Q is prepared, and this paste is applied on each counter electrode 20 so as to connect adjacent bypass diodes, and is cured. At this time, as the paste, it is preferable to use a low-temperature curable paste that can be cured at a temperature of 90 ° C. or less from the viewpoint of avoiding an adverse effect on the photosensitizing dye.

  Finally, the back sheet 80 is prepared. Then, the peripheral edge portion 80 a of the back sheet 80 is bonded to the annular region 14 a of the connecting portion 14 via the bonding portion 91. At this time, the peripheral portion 80a of the backsheet 80 is connected via the bonding portion 91 so that the bonding portion 91 and the sealing portion 30A of the DSC 50 are separated from each other and the backsheet 80 and the counter electrode 20 are separated from each other. It adheres to the annular region 14a. At this time, the thickness of the bonding portion 91 is adjusted so that the first distance H1 can be larger than the second distance H2.

  The DSC module 100 is obtained as described above.

  In the above description, in order to form the connection terminal 16, the current collector wiring 17, the external connection portion 18, the inorganic insulating material 33, the coupling portion 14, and the oxide semiconductor layer 13, Although the precursor of the electrical wiring 17, the precursor of the external connection portion 18, the precursor of the inorganic insulating material 33, the precursor of the coupling portion 14, and the precursor of the oxide semiconductor layer 13 are used, the method is used. The connecting terminal 16, the current collector wiring 17, the external connecting portion 18, the inorganic insulating material 33, the connecting portion 14, and the oxide semiconductor layer 13 may be formed by separately firing the precursor.

  The present invention is not limited to the above embodiment. For example, in the above embodiment, a desiccant may be provided between the counter electrode 20 of the DSC 50 and the back sheet 80. In this case, the desiccant may be provided between the counter electrode 20 and the back sheet 80 of at least one DSC 50 of all the DSCs 50, but the desiccant is provided between the counter electrode 20 of all the DSCs 50 and the back sheet 80. It is preferable to provide it. The desiccant may be sheet-like or granular. The desiccant is not particularly limited as long as it absorbs moisture, and examples of the desiccant include silica gel, alumina, and zeolite.

  Moreover, in the said embodiment, although both the connection terminal 16 and the current collection wiring 17 are provided as the electrical power collector 19, what is necessary is just to provide any one. Moreover, as long as what constitutes the current collector 19 is provided, both the connection terminal 16 and the current collector wiring 17 may not be provided. For example, as in the DSC module 200 shown in FIG. 9, when the DSCs 50C and 50D that are part of the DSCs 50A to 50D are folded halfway and the DSC 50A and the DSC 50D are arranged so that they are adjacent to each other, the transparent conductive film 12D is Unlike the DSC module 100, it is not necessary to provide the connection part 12g between the main body part 12a and the first current extraction part 12f, and it is not necessary to provide the current collecting wiring 17.

  In the above embodiment, the current collector 19 is not provided between two adjacent DSCs 50, but the current collector 19 may be provided between two adjacent DSCs 50.

  In the above embodiment, the current collector 19 is provided only on the inner side of the bonding portion 91, but may be provided on the outer side of the bonding portion 91.

  Moreover, in the said embodiment, although the 2nd groove | channel 90B which cross | intersects the connection part 14 of the adhesion part 91 and the transparent conductive substrate 15 is not covered with the inorganic insulating material 33, like the DSC module 300 shown in FIG. In addition, the second groove 90 </ b> B is preferably covered with the inorganic insulating material 33. In FIG. 10, the back sheet 80 is omitted. As shown in FIG. 10, when the second groove 90 </ b> B intersects the connecting portion 14, moisture enters the space formed by the back sheet 80, the DSC 50, and the adhesive portion 91 through the second groove 90 </ b> B. It becomes possible. In this case, the inorganic insulating material 33 enters the second groove 90 </ b> B, and the inorganic insulating material 33 covers the edge of the transparent conductive film 12 except for the main body portion 12 a, so that the back sheet 80 and the adhesive are bonded. Intrusion of moisture from the outside to the inside of the portion 91 is sufficiently suppressed. For this reason, the water | moisture content which penetrate | invaded into the space formed with the back sheet 80, DSC50, and the adhesion part 91 enters into the inside of the sealing part 30A through the sealing part 30A sufficiently. For this reason, it is possible to sufficiently suppress a decrease in durability of the DSC module 300.

Furthermore, in the said embodiment, although the 1st electric current extraction part 12f and the 2nd electric current extraction part 12h are arrange | positioned around the DSC50A side, as shown to the DSC module 400 shown in FIG. And the 2nd electric current extraction part 12h may be arrange | positioned around the DSC50D side. In this case, the 1st electric current extraction part 12f is provided so that it may protrude to the outer side of 30 A of sealing parts on the opposite side to DSC50C with respect to the main-body part 12a of transparent conductive film 12D. On the other hand, the second current extraction portion 12h is provided on the opposite side of the DSC 50C with respect to the main body portion 12a of the transparent conductive film 12D. A connecting portion 12i as a second connecting portion extends along the transparent conductive films 12A to 12D, and the connecting portion 12i connects the second current extraction portion 12f and the metal substrate 21 of the counter electrode 20 of the DSC 50A. Yes. Specifically, the current collection wiring 417 is provided on the connection portion 12i along the connection portion 12i, and the current collection wiring 417 and the conductive material 60P extending from the bypass diode 70A are connected. The DSC module 400 can also save space while having excellent photoelectric conversion characteristics. In this case, the resistance value of the connection portion 12i is preferably equal to or less than the resistance value represented by the following formula (1), as in the first embodiment.
Resistance value = number of DSCs 50 connected in series × 120Ω (1)

  Moreover, in the said embodiment, although the external connection part 18 is provided, the external connection part 18 does not need to be provided.

  Moreover, in the said embodiment, although 31 A of 1st sealing parts integrate 1st sealing part 31A adjacent, and comprise the 1st integrated sealing part 31, adjacent 1st sealing part 31A may not be integrated. Similarly, the second sealing portions 32A are integrated between the adjacent counter electrodes 20 to form the second integrated sealing portion 32, but the second sealing portions 32A are integrated. It does not have to be.

  Moreover, in the said embodiment, although the protrusion part 32d is provided in the area | region above the electrolyte 40, you may provide in the area | region above 31 A of 1st sealing parts. Even in this case, the stress applied to the sealing portion 30A due to a change in internal pressure or an external force can be suppressed by the protruding portion 32d.

  Moreover, in the said embodiment, although the protrusion part 32d is provided over the cyclic | annular circumference as shown in FIG. 5, it does not need to be provided over the whole circumference. In this case, when the DSC 50 is rectangular as in the above embodiment, the protrusion 32d is preferably provided at a position corresponding to at least the long side. When the DSC 50 is rectangular, stress is applied to the long side rather than the short side. Therefore, the second sealing portion 32A provided at the position corresponding to the long side has the protruding portion 32d, so that the stress can be sufficiently relieved. it can.

  In the above embodiment, the second sealing portion 32A is provided on the first sealing portion 31A. However, as long as the second sealing portion 32A is adhered to the first sealing portion 31A, the side surface of the first sealing portion 31A is provided. May be adhered to the inorganic insulating material 33, or the side surface of the inorganic insulating material 33 may be further covered and adhered to the transparent conductive substrate 15.

  In the above embodiment, the counter electrode 20 has the metal substrate 21, but instead of the metal substrate 21, an insulating substrate and a conductive layer provided on the electrolyte side of the insulating substrate may be used. As the material of the insulating substrate, the same material as that of the transparent substrate 11 can be used. Moreover, as a material of a conductive layer, the same material as the transparent conductive film 12 can be used. In this case, a plurality of DSCs 50 can be connected in series by extending the counter electrode 20 to the upper part of the connection terminal 16 and connecting the conductive layer of the counter electrode 20 and the connection terminal 16 via the conductive material 60P.

  Moreover, in the said embodiment, although the groove | channel 90 has the 2nd groove | channel 90B, the 2nd groove | channel 90B does not necessarily need to be formed.

  In the above embodiment, the oxide semiconductor layer 13 is formed on the transparent conductive substrate 15, but may be formed on the metal substrate 21. In this case, the metal substrate 21 does not have the catalyst layer 22, and the catalyst layer 22 may be formed on the transparent conductive substrate 15.

  Moreover, in the said embodiment, although the width | variety of the conductive material connection part 16A and the conductive material non-connection part 16B of the connection terminal 16 is made constant, the width | variety of the conductive material connection part 16A and the conductive material non-connection part 16B is respectively connected. It may change along the extending direction of the terminal 16. For example, the width of the conductive material non-connecting portion 16B monotonically increases from the end farthest from the conductive material connecting portion 16A toward the end closest to the conductive material connecting portion 16A. The width may monotonously increase from the end portion on the 16B side toward the end portion farthest from the conductive material non-connecting portion 16B.

  Moreover, in the said embodiment, although the electrically-conductive material connection part 16A and the electrically-conductive material non-connection part 16B are provided along the sealing part 30A, respectively, these are formed so that it may extend in the direction away from the sealing part 30A. May be. However, in this case, it is preferable that the conductive material connecting portion 16A is disposed at a position closer to the sealing portion 30A than the conductive material non-connecting portion 16B. In this case, the conductive material 60P can be made shorter.

  Alternatively, in the connection terminals 16 formed on the transparent conductive films 12A to 12C, the conductive material non-connecting portion 16B may be disposed so as to be orthogonal to the conductive material connecting portion 16A.

  Further, it may be equal to or smaller than the width of the conductive material connecting portion 16A and the conductive material non-connecting portion 16B.

  In the above embodiment, the second sealing portion 32A is bonded to the first sealing portion 31A. However, the second sealing portion 32A may not be bonded to the first sealing portion 31A.

  Furthermore, in the said embodiment, although 30 A of sealing parts are comprised by 31 A of 1st sealing parts and 32 A of 2nd sealing parts, 32 A of 2nd sealing parts may be abbreviate | omitted.

  Moreover, in the said embodiment, the width P of the adhesion part of the counter electrode 20 and the partition part 31b of the 1st integrated sealing part 31 is the adhesion part of the counter electrode 20 and the annular part 31a of the 1st integrated sealing part 31. Although it is narrower than the width Q, the width P of the bonding portion may be equal to or greater than the width Q of the bonding portion.

  Furthermore, in the said embodiment, the width | variety R of the partition part 31b of the 1st integrated sealing part 31 is 100% or more of the width | variety T of the annular part 31a of the 1st integrated sealing part 31, and less than 200%. However, the width R of the partition part 31b may be less than 100% of the width T of the annular part 31a of the first integrated sealing part 31, or 200% or more.

  Moreover, in the said embodiment, although the adhesion part 91 and the transparent conductive film 12 are adhere | attached through the connection part 14 which consists of glass frit, the adhesion part 91 and the transparent conductive film 12 do not necessarily pass through the connection part 14. FIG. Need not be glued together.

  Furthermore, in the said embodiment, although the connection part 14 and the inorganic insulating material 33 are spaced apart, it is preferable that these are all comprised with the glass frit and integrated. In this case, even if moisture enters in the space formed by the back sheet 80, the DSC 50, and the adhesive portion 91, the interface between the connecting portion 14 and the transparent conductive substrate 15, the sealing portion 30A and the transparent conductive substrate. 15 no longer exists. In addition, both the inorganic insulating material 33 and the connecting portion 14 are made of an inorganic material, and have a higher sealing ability than a resin. For this reason, invasion of moisture through the interface between the connecting portion 14 and the transparent conductive substrate 15 or through the interface between the inorganic insulating material 33 and the transparent conductive substrate 15 can be sufficiently suppressed.

  Moreover, in the said embodiment, although the inorganic insulating material 33 consists of inorganic substances, the material which comprises the inorganic insulating material 33 should just have melting | fusing point higher than the material which comprises 30 A of 1st sealing parts. For this reason, a glass frit is mentioned as such a material.

  Furthermore, in the said embodiment, although several DSC50 is connected in series, you may connect in parallel.

  In the above embodiment, the DSC module 100 has a plurality of DSCs 50, but the number of DSCs 50 may be one. In this case, the back sheet 80 only needs to be provided so as to surround one DSC 50. Even in this case, the current collector 19 is outside the sealing portion 30 </ b> A and inside the bonding portion 91. It is preferable to be provided.

  Moreover, in the said embodiment, although the number of DSC50 is four, in the case of multiple, it is not limited to four. When there are a plurality of DSCs 50 as described above, as shown in FIG. 9, it is preferable to arrange the DSCs 50 in a certain direction as shown in FIG. 2, rather than when a part of the DSCs 50A to 50D is folded halfway. When the DSCs 50 are arranged in a certain direction as described above, it is possible to select either an even number or an odd number as the number of DSCs 50, the number of DSCs 50 can be freely determined, and the degree of freedom in design is improved. be able to.

  Moreover, in the said embodiment, although the counter electrode 20 comprises the counter substrate, it may replace with the counter electrode 20 and may use an insulating substrate as a counter substrate. In this case, a structure including an oxide semiconductor layer, a porous insulating layer, and a counter electrode is disposed in a space between the insulating substrate, the sealing portion 30A, and the transparent conductive substrate 15. The structure can be provided on the surface of the transparent conductive substrate 15 on the counter substrate side. The structure includes an oxide semiconductor layer, a porous insulating layer, and a counter electrode in order from the transparent conductive substrate 15 side. An electrolyte is disposed in the space. The electrolyte is impregnated into the oxide semiconductor layer and the porous insulating layer. Here, as the insulating substrate, for example, a glass substrate or a resin film can be used. As the counter electrode, the same electrode as the counter electrode 20 of the above embodiment can be used. Alternatively, the counter electrode may be composed of a single porous layer containing, for example, carbon. The porous insulating layer is mainly for preventing physical contact between the porous oxide semiconductor layer and the counter electrode, and impregnating the electrolyte inside. As such a porous insulating layer, for example, an oxide fired body can be used.

  Hereinafter, the content of the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples.

Example 1
First, a laminate was prepared by forming a transparent conductive film made of FTO having a thickness of 1 μm on a transparent substrate made of glass having a thickness of 1 mm. Next, as shown in FIG. 3, CO ₂ to form a groove 90 on the transparent conductive film 12 by a laser (Universal System Co. V-460), to form a transparent conductive film 12A-12F. At this time, the width of the groove 90 was 1 mm. Each of the transparent conductive films 12A to 12C was formed so as to have a rectangular main body portion of 4.6 cm × 2.0 cm and an extension portion protruding from one side edge portion of the main body portion. The transparent conductive film 12D was formed to have a 4.6 cm × 2.1 cm rectangular main body portion and an extending portion protruding from one side edge of the main body portion. Further, of the transparent conductive films 12A to 12D, the extension portions 12c of the three transparent conductive films 12A to 12C are extended from the one side edge portion 12b of the main body portion 12a and the extension portion 12d, and are adjacent to each other. The transparent conductive film 12 is configured to include a facing portion 12e facing the main body portion 12a. Further, the extending portion 12c of the transparent conductive film 12D is configured only by the overhanging portion 12d protruding from the one side edge portion 12b of the main body portion 12a. At this time, the length of the overhang portion 12d in the overhang direction (direction orthogonal to the X direction in FIG. 2) was 2.1 mm, and the width of the overhang portion 12d was 9.8 mm. The width of the facing portion 12e was 2.1 mm, and the length of the facing portion 12e in the extending direction was 9.8 mm.

  The transparent conductive film 12D has not only the main body portion 12a and the extension portion 12c but also a first current extraction portion 12f and a connection portion 12g that connects the first current extraction portion 12f and the main body portion 12a. Formed. The transparent conductive film 12E was formed to have the second current extraction part 12h. At this time, the width of the connecting portion 12g was 1.3 mm, and the length was 59 mm. Further, the resistance value of the connecting portion 12g was measured by a four-terminal method and found to be 100Ω.

  Next, a precursor of the connection terminal 16 including the conductive material connection portion 16A and the conductive material non-connection portion 16B was formed on the extending portion 12c of the transparent conductive films 12A to 12C. Specifically, the precursor of the connection terminal 16 is provided such that the precursor of the conductive material non-connecting portion 16B is provided on the overhanging portion 12d so that the precursor of the conductive material connecting portion 16A is provided on the facing portion 12e. Formed. At this time, the precursor of the conductive material non-connecting portion 16B was formed to be narrower than the width of the conductive material connecting portion 16A. The precursor of the connection terminal 16 was formed by applying and drying a silver paste (“GL-6000X16” manufactured by Fukuda Metal Foil Powder Industry Co., Ltd.) by screen printing.

  Furthermore, the precursor of the current collection wiring 17 was formed on the connection part 12g of transparent conductive film 12D. The precursor of the current collector wiring 17 was formed by applying a silver paste by screen printing and drying.

  Further, precursors of external connection portions 18a and 18b for taking out current to the outside were formed on the first current extraction portion 12f and the second current extraction portion 12h of the transparent conductive film 12A, respectively. The precursor of the external connection terminal was formed by applying a silver paste by screen printing and drying.

  Furthermore, the precursor of the oxide semiconductor layer 13 was formed on each main body part 12a of the transparent conductive films 12A to 12D. The precursor of the oxide semiconductor layer 13 is a porous oxide semiconductor layer forming paste containing titania (“PST-21NR” manufactured by JGC Catalysts & Chemicals Co., Ltd.) three times by screen printing, dried, and further titania. It was formed by applying a porous oxide semiconductor layer forming paste (“PST-400C” manufactured by JGC Catalysts & Chemicals Co., Ltd.) by screen printing, followed by drying.

  Moreover, the precursor of the inorganic insulating material 33 was formed so as to enter the first groove 90A and cover the edge of the main body part 12a forming the first groove 90A. The inorganic insulating material 33 was formed by applying and drying a paste containing glass frit by screen printing. At this time, the edge of the transparent conductive film covered with the inorganic insulating material 33 was a 0.2 mm portion from the groove 90.

  Further, in order to fix the back sheet 80, it is made of glass frit so as to surround the inorganic insulating material 33 and pass through the transparent conductive film 12D, the transparent conductive film 12E, and the transparent conductive film 12F in the same manner as the inorganic insulating material 33. A precursor of the annular connecting portion 14 was formed. At this time, the precursor of the connecting portion 14 was formed so that the precursor of the current collecting wiring 17 was disposed inside thereof. Moreover, the connection part 14 was formed so that the 1st electric current extraction part and the 2nd electric current extraction part may be arrange | positioned on the outer side. The connecting part 14 was formed by applying and drying a paste containing glass frit by screen printing.

Next, the precursor of the connection terminal 16, the precursor of the current collector wiring 17, the precursor of the external connection portions 18a and 18b, the precursor of the inorganic insulating material 33, the precursor of the connecting portion 14, and the precursor of the inorganic insulating material 33 Then, the precursor of the oxide semiconductor layer 13 is baked at 500 ° C. for 15 minutes to form the connection terminal 16, the current collector wiring 17, the external connection portions 18 a and 18 b, the connection portion 14, the inorganic insulating material 33, and the oxide semiconductor layer 13. did. At this time, the width of the conductive material connection portion of the connection terminal 16 was 1.0 mm, and the width of the conductive material non-connection portion was 0.3 mm. Further, the length along the extending direction of the conductive material connecting portion was 7.0 mm, and the length along the extending direction of the conductive material non-connecting portion was 7.0 mm. The dimensions of the current collector wiring 17, the external connection portions 18 a and 18 b, the coupling portion 14, and the oxide semiconductor layer 13 were as follows.

Current collecting wiring 17: thickness 4 μm, width 200 μm, length 79 mm along the X direction in FIG. 2, length 21 mm along the direction orthogonal to the X direction in FIG.
External connection portions 18a and 18b: thickness 20 μm, width 2 mm, length 7 mm
Connection part 14: Thickness (H1): 50 μm, width 3 mm
Oxide semiconductor layer 13: 13 μm thick, 17 mm length in the X direction in FIG. 2, 42.1 mm length in the direction orthogonal to the X direction in FIG.

  Next, the working electrode is immersed overnight in a dye solution containing 0.2 mM of a photosensitizing dye composed of N719 and a solvent in which acetonitrile and tert-butanol are mixed at a volume ratio of 1: 1. Then, it was taken out and dried, and a photosensitizing dye was supported on the oxide semiconductor layer.

  Next, on the oxide semiconductor layer, in a solvent composed of 3-methoxypropionitrile, hexylmethylimidazolium iodide 2M, n-methylbenzimidazole 0.3M, and guanidinium thiocyanate 0.1M are formed. The electrolyte was applied and dried to place the electrolyte.

  Next, a first integrated sealing portion forming body for forming the first sealing portion was prepared. The first integrated sealing portion forming body prepares one sealing resin film made of maleic anhydride-modified polyethylene (trade name: Binnel, manufactured by DuPont) of 8.0 cm × 4.6 cm × 50 μm, It was obtained by forming four rectangular openings in the sealing resin film. At this time, each opening has a size of 1.7 cm × 4.4 cm × 50 μm, the width of the annular portion is 2 mm, and the width of the partition portion that partitions the inner opening of the annular portion is 2.6 mm. The 1st integrated sealing part formation body was produced.

  Then, after superposing the first integrated sealing portion forming body on the inorganic insulating material 33 on the working electrode, the first integrated sealing portion forming body is heated and melted to form the inorganic insulating material 33 on the working electrode. Glued.

  Next, four counter electrodes were prepared. Of the four counter electrodes, two counter electrodes were prepared by forming a catalyst layer of platinum having a thickness of 5 nm on a 4.6 cm × 1.9 cm × 40 μm titanium foil by sputtering. The remaining two counter electrodes among the four counter electrodes were prepared by forming a catalyst layer made of platinum having a thickness of 5 nm on a 4.6 cm × 2.0 cm × 40 μm titanium foil by sputtering. In addition, another first integrated sealing portion forming body was prepared, and this first integrated sealing portion forming body was adhered to the surface of the counter electrode facing the working electrode in the same manner as described above. .

Then, the first integrated sealing portion forming body bonded to the working electrode and the first integrated sealing portion forming body bonded to the counter electrode are opposed to each other, and the first integrated sealing portion forming bodies are overlapped with each other. Combined. In this state, the first integrated sealing portion forming body was heated and melted while pressurizing the first integrated sealing portion forming body. Thus, the first sealing portion was formed between the working electrode and the counter electrode. At this time, the width P of the bonded portion between the partition portion of the first integrated sealing portion and the surface on the transparent conductive substrate side of the counter electrode, and the transparent conductive portion of the annular portion and the counter electrode of the first integrated sealing portion. The width Q of the adhesive portion with the surface on the conductive substrate side, the width R of the partition portion of the first integrated sealing portion, the width T of the annular portion, and the distance H2 between the transparent conductive substrate 15 and the surface 20b of the counter electrode 20 Was as follows.

P = 1.0mm
Q = 2.0mm
R = 2.6mm
T = 2.2mm
H2 = 0.08mm

  Next, a second integrated sealing part was prepared. The second integrated sealing portion is prepared by preparing a sealing resin film made of maleic anhydride-modified polyethylene (trade name: Binnel, manufactured by DuPont) of 8.0 cm × 4.6 cm × 50 μm. It was obtained by forming four rectangular openings in the stopping resin film. At this time, each opening has a size of 1.7 cm × 4.4 cm × 50 μm, the width of the annular portion is 2 mm, and the width of the partition portion that partitions the inner opening of the annular portion is 2.6 mm. A second integrated sealing portion was produced so that the width of the protruding portion provided continuously on the inner opening side of the portion and the partition portion was 0.3 mm. The second integrated sealing portion was bonded to the counter electrode so as to sandwich the edge of the counter electrode together with the first integrated sealing portion. At this time, a heating jig composed of a brass frame-like member having the same shape as the second integrated sealing portion is heated and pressed against the second integrated sealing portion, and the first integrated sealing portion and the second integrated sealing portion The integrated sealing portion was bonded to the counter electrode and the first integrated sealing portion by heating and melting.

  Next, the desiccant sheet was affixed on the metal substrate of each counter electrode with the adhesive which consists of a double-sided tape. The dimensions of the desiccant sheet were 1 mm in thickness x 3 cm in length x 1 cm in width, and a zeo sheet (trade name, manufactured by Shinagawa Kasei Co., Ltd.) was used as the desiccant sheet.

  Next, as shown in FIG. 2, bypass diodes 70 </ b> A to 70 </ b> C are respectively provided in the three partition portions of the second integrated sealing portion, and a low-temperature curing type silver paste (Dotite D500 manufactured by Fujikura Kasei Co., Ltd.) is used. It fixed by apply | coating so that it might connect with the metal substrate 21 of the counter electrode 20 from the terminal of both ends. Further, among the four DSCs 50A to 50D, the bypass diode 70D is connected to the annular part of the second integrated sealing part of the DSC 50D, and the low-temperature curing type silver paste is connected to the counter electrode from one of the terminals at both ends of the diode. It was fixed by applying as follows. Thus, the conductive material 60Q was formed so as to connect the two adjacent bypass diodes to the four bypass diodes 70A to 70D. At this time, the conductive material 60Q was formed by curing the low temperature curable silver paste at 30 ° C. for 12 hours. As the bypass diode, RB751V-40 manufactured by ROHM was used.

  Further, a low temperature curing type silver paste (Dotite D-500, manufactured by Fujikura Kasei Co., Ltd.) is used so as to connect each conductive material 60Q between the bypass diodes and the conductive material connecting portions on the three transparent conductive films 12A to 12C. The conductive material 60P was formed by applying and curing. Further, with respect to the bypass diode 70A, the conductive material 60P was formed by applying and curing the low-temperature curable silver paste so as to be connected to the conductive material connecting portion on the transparent conductive film 12E. At this time, the conductive material 60P was formed by curing the low temperature curable silver paste at 30 ° C. for 12 hours.

  Next, butyl rubber (“Aikamelt” manufactured by Aika Kogyo Co., Ltd.) was applied onto the connecting portion 14 with a dispenser while heating at 200 ° C. to form a precursor of the bonded portion. On the other hand, a laminate is prepared by laminating a film (thickness 50 μm) made of polybutylene terephthalate (PBT) resin film (thickness 50 μm), aluminum foil (thickness 25 μm) and binel (trade name, manufactured by DuPont) in this order. did. And it piled up on the peripheral part of this laminated body, and the precursor of the adhesion part 91, and pressurized for 10 second. Thus, the peripheral edge 80a of the back sheet 80 was bonded to the connecting portion 14 via the bonding portion 91 having a thickness of 0.2 mm. A DSC module was obtained as described above.

(Comparative Example 1)
Between the first sealing portion of each DSC 50 and the inorganic insulating material, it extends from the end of the sealing portion in the direction orthogonal to the arrangement direction X, and the connection terminal 16 or the current collector outside the sealing portion. A DSC module was produced in the same manner as in Example 1 except that the current collector connected to the wiring 17 was formed with a width of 200 μm. One current collector wiring was provided for each DSC 50.

(Comparative Example 2)
A DSC module was prepared in the same manner as in Comparative Example 1 except that the width of the sealing portion including the current collecting wiring was doubled and the area of the power generation layer was reduced accordingly.

(Characteristic evaluation)
(Durability and initial photoelectric conversion efficiency)
About the DSC module obtained in Example 1 and Comparative Examples 1-2, the initial photoelectric conversion efficiency immediately after preparation was measured under the illumination intensity of 200 lux. Moreover, about DSC module, the time until photoelectric conversion efficiency at the time of leaving in a high temperature environment of 85 degreeC fell 10% with respect to initial stage photoelectric conversion efficiency was measured. Specifically, the module was taken out every 250 hours and the photoelectric conversion efficiency was measured. The results are shown in Table 1. In Table 1, the initial photoelectric conversion efficiency indicates the initial photoelectric conversion efficiency of Example 1 and Comparative Examples 1 and 2 when the initial photoelectric conversion efficiency of Comparative Example 1 is 100.

  From the results shown in Table 1, it was found that the DSC module of Example 1 exhibited high durability and initial photoelectric conversion efficiency. On the other hand, although the DSC module of Comparative Example 1 has high initial photoelectric conversion efficiency, the durability is insufficient, and the DSC module of Comparative Example 2 has sufficient durability but low initial photoelectric conversion efficiency. I understood.

  From the above, it was confirmed that the DSC module of the present invention has excellent durability and conversion efficiency.

11 ... Transparent substrate (insulating substrate)
12 ... Transparent conductive film (conductive film)
13 ... Oxide semiconductor layer (power generation layer)
DESCRIPTION OF SYMBOLS 14 ... Connection part 14a ... Ring area 15 ... Transparent conductive substrate (conductive substrate)
DESCRIPTION OF SYMBOLS 16 ... Connection terminal 17 ... Current collection wiring 18 ... External connection part 19 ... Current collector 20 ... Counter electrode (counter substrate)
30A ... Sealing part 31 ... First integrated sealing part (first sealing part)
31A ... 1st sealing part 32 ... 2nd integrated sealing part (2nd sealing part)
32A, 32B ... second sealing portion 32d ... protruding portion 33 ... inorganic insulating material 40 ... electrolyte 50, 50A to 50D ... dye-sensitized solar cell 80 ... back sheet 91 ... adhesive portion 100, 200, 300, 400 ... dye increase Sensitive solar cell module (Dye-sensitized solar cell element)
H1: Distance between the transparent conductive substrate and the interface between the adhesive portion and the back sheet H2: Distance between the transparent conductive substrate and the back sheet side surface of the counter electrode

Claims (4)

Conductive substrate ,
Current collector provided on the conductive substrate,
A counter substrate facing the conductive substrate ;
A power generation layer provided on the conductive substrate or the counter substrate ;
An electrolyte disposed between the conductive substrate and the counter substrate ; and
At least one dye-sensitized solar cell that surrounds the power generation layer and the electrolyte together with the conductive substrate and the counter substrate, and has an annular sealing portion that joins the conductive substrate and the counter substrate ;
A backsheet facing the at least one dye-sensitized solar cell;
In an annular region surrounding the at least one dye-sensitized solar cell, an adhesive portion that bonds the back sheet and the conductive substrate ,
The adhesive portion is spaced apart from the sealing portion;
The dye-sensitized solar cell element, wherein the current collector is provided only outside the sealing portion and inside the bonding portion . The dye-sensitized solar cells and multiple Yes,
The conductive substrate has an insulating substrate and a conductive film provided on the insulating substrate,
The insulating substrate of a plurality of dye-sensitized solar cells is a common insulating substrate of a plurality of dye-sensitized solar cells,
2. The dye-sensitized solar cell element according to claim 1, wherein the conductive films of the plurality of dye-sensitized solar cells are respectively provided on the common insulating substrate . 3. The dye-sensitized solar cell according to claim 2, wherein the current collector is provided only outside the sealing portion and between two adjacent dye-sensitized solar cells. Element . The said dye-sensitized solar cell element is further provided with the external connection part for taking out an electric current outside only on the said electroconductive board | substrate and the said adhesion part, The Claim 2 or Claim 3 characterized by the above-mentioned. The dye-sensitized solar cell element according to 1 .

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