JP5437739B2 - Liquid processing system - Google Patents

Description

  The present invention relates to a liquid processing system for liquid processing a substrate.

  In the photolithography process in the manufacturing process of semiconductor devices, the surface of a semiconductor substrate (hereinafter referred to as “substrate” or “wafer”) is subjected to a hydrophobic treatment, and then a BARC (Bottom Anti-Reflective Coating) is applied and heated. The resist is coated and heated, exposed, and the solubilized portion is developed and removed to form a fine resist pattern.

  The above-described coating process is usually performed in a state where the wafer held on the spin chuck is rotated in a coating processing unit provided with a spin chuck that is provided in a cup and rotatably holds the wafer and a nozzle that supplies a chemical solution. This is done by supplying a chemical solution from the nozzle to the wafer surface.

  Further, the above-described heat treatment is usually performed by placing a wafer on a heat plate maintained at a desired heat treatment temperature in a heat treatment unit such as an oven equipped with a heat plate.

  Further, when the wafer subjected to the coating process is subjected to a heat treatment, the wafer is provided with a wafer transfer arm that is adjacent to the coating processing section and the heating processing section and is provided so as to freely advance and retract in the coating processing section and the heating processing section. The wafer on which the coating process has been performed is transported from the coating processing section to the heat processing section.

  When performing a coating process on a wafer in this way, when a coating process is performed on a wafer using a chemical solution, the chemical solution supplied to the wafer surface rotating at high speed may scatter from the wafer surface as a mist. is there. In addition, when the coated wafer is transported, the transport unit is provided with a drive mechanism for extending and retracting the transport arm and driving up and down, so that particles may be generated from the drive mechanism. .

  Here, the transfer chamber in which the transfer unit is provided and the processing chamber in which the coating processing unit is provided may be individually partitioned so that mist or particles do not diffuse mutually. For example, a substrate processing apparatus is disclosed in which a shutter is provided and a shutter is provided at a transfer port through which a transfer unit allows an arm (wafer transfer arm) to enter a processing container (processing chamber) (see, for example, Patent Document 1). ). In the example disclosed in Patent Document 1, a gas supply unit is provided so as to sandwich the conveyance port, and when the shutter is opened, purge gas is supplied from the gas discharge hole to form an airflow curtain that functions as a particle diffusion barrier.

  Moreover, in the example disclosed in Patent Document 1, the casing that forms the exterior body of the lifting mechanism of the transport unit is divided into a first room and a second room, a fan is provided in the second room, The atmosphere in the room is sucked and particles generated when the transport unit is raised and lowered are discharged from the second room.

JP 2002-217264 A

  However, when the substrate is subjected to liquid processing using a chemical solution in the above-described liquid processing system (substrate processing apparatus), there are the following problems.

  In the example disclosed in Patent Document 1, it is possible to prevent particles generated when the transport unit is driven from flowing out to the coating processing unit. However, it may not be possible to prevent mist generated in the coating processing unit from flowing out to the transport unit.

  When performing a coating process by supplying a chemical solution to the wafer surface in the coating processing unit, if particles or the like are present on the wafer surface, the coating film homogeneity or surface flatness is lowered. Therefore, it is preferable to reduce dust contained in the atmosphere in the processing chamber as much as possible, and the pressure in the processing chamber may be higher than the pressure in the transfer chamber, that is, the processing chamber may be set to a positive pressure with respect to the transfer chamber. Therefore, when the shutter is opened, mist contained in the atmosphere in the processing chamber may flow out to the transfer chamber side through the transfer port.

  In such a case, the method of supplying the purge gas from the gas discharge hole may not sufficiently prevent the mist from flowing out from the processing chamber to the transfer chamber side.

  In addition, since the shutter has a drive mechanism, particles may be generated from the drive mechanism when the shutter is opened and closed.

  The present invention has been made in view of the above points, and can prevent mist or particles generated in a certain area including a liquid processing unit or the like from flowing out to another area including a transport unit or another processing unit. A liquid treatment system is provided.

  In order to solve the above-described problems, the present invention is characterized by the following measures.

The liquid processing system according to the present invention includes a liquid processing unit that liquid-processes a substrate using a chemical solution, a transport unit that carries the substrate into and out of the liquid processing unit, and a space between the liquid processing unit and the transport unit. with partitions, and the partition plate with an opening for the conveying unit loading and unloading the substrate to the liquid processing section are provided, in terms of the liquid processing part side of the partition plate, the opening of the partition plate A plurality of exhaust holes for exhausting the atmosphere of the space in which the liquid processing unit is provided , and an exhaust passage provided in the partition plate and communicating with the plurality of exhaust holes. Ru equipped, characterized in that.

  ADVANTAGE OF THE INVENTION According to this invention, it can prevent that the mist or particle which generate | occur | produced in a certain area containing a liquid process part etc. flows out into the other area containing a conveyance part or another process part.

1 is a schematic plan view of a resist coating and developing treatment system according to a first embodiment. 1 is a schematic front view of a resist coating and developing treatment system according to a first embodiment. 1 is a schematic rear view of a resist coating and developing treatment system according to a first embodiment. It is sectional drawing which shows typically the structure of the conveyance part of the resist application development processing system which concerns on 1st Embodiment, a coating process part, and a heat processing part. It is the front view and side view which show the structure of the partition plate of the resist application | coating development system which concerns on 1st Embodiment. It is sectional drawing which shows the structure of the partition plate of the resist application | coating development processing system which concerns on 1st Embodiment. It is the front view and side view which show the structure of the partition plate of the resist application | coating development system which concerns on the modification of 1st Embodiment. It is sectional drawing which shows the structure of the partition plate of the resist application | coating development processing system which concerns on the modification of 1st Embodiment. It is sectional drawing which shows typically the structure of the conveyance part of the resist coating and developing processing system which concerns on 2nd Embodiment, and a coating processing part. It is sectional drawing which shows typically the structure of the conveyance part of the resist coating and developing processing system which concerns on the modification of 2nd Embodiment, and a coating processing part. It is sectional drawing which shows typically the structure of the conveyance part and heat processing part of the resist application | coating development processing system which concerns on 3rd Embodiment. It is sectional drawing which shows typically the structure of the conveyance part and heat processing part of the resist application | coating development system which concerns on the modification of 3rd Embodiment.

Next, a mode for carrying out the present invention will be described with reference to the drawings.
(First embodiment)
First, the resist coating and developing system according to the first embodiment will be described with reference to FIGS.

  1 is a schematic plan view of a resist coating and developing treatment system according to the present embodiment, FIG. 2 is a schematic front view of the resist coating and developing processing system, and FIG. 3 is a schematic rear view of the resist coating and developing processing system.

  As shown in FIG. 1, the resist coating and developing system 1 carries, for example, 25 wafers W in the cassette unit from the outside to the resist coating and developing system 1 and also carries wafers W into the cassette C. A cassette station 2 to be taken out, a processing station 3 which is provided adjacent to the cassette station 2 and which is provided with various processing units for performing predetermined processing in a single-wafer type in the coating and developing process, and this processing station. 3 has a configuration in which an interface unit 4 for transferring the wafer W to and from an exposure apparatus (not shown) provided adjacent to the unit 3 is integrally connected.

  The cassette station 2 can mount a plurality of cassettes C at a predetermined position on the cassette mounting table 5 in a row in the horizontal X direction. Further, the cassette station 2 is provided with a wafer transfer arm 7 that can move along the X direction on the transfer path 6. The wafer transfer arm 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Is configured to be accessible.

  Further, the wafer transfer arm 7 is configured to be rotatable in the θ direction about the Z axis, and also accesses the transition apparatus TRS belonging to the third processing unit group G3 on the processing station 3 side as will be described later. It is configured to be able to.

  The processing station 3 includes, for example, five processing unit groups G1 to G5 in which a plurality of processing units are arranged in multiple stages. As shown in FIG. 1, on the front side of the processing station 3, a first processing unit group G1 and a second processing unit group G2 are arranged in this order from the cassette station 2 side. In addition, on the back side of the processing station 3, a third processing unit group G3, a fourth processing unit group G4, and a fifth processing unit group G5 are arranged in order from the cassette station 2 side. A first transport unit 8 is provided between the third processing unit group G3 and the fourth processing unit group G4. The first transfer unit 8 is configured to selectively access the first processing unit group G1, the third processing unit group G3, and the fourth processing unit group G4 to transfer the wafer W. A second transport unit 9 is provided between the fourth processing unit group G4 and the fifth processing unit group G5. The second transfer unit 9 is configured to selectively access the second processing unit group G2, the fourth processing unit group G4, and the fifth processing unit group G5 to transfer the wafer W.

  In the first processing unit group G1, as shown in FIG. 2, a liquid processing unit that performs processing by supplying a predetermined processing liquid to the wafer W, for example, a resist coating unit COT that applies a resist liquid to the wafer W, exposure Bottom coating units BARC for forming an antireflection film for preventing light reflection at the time are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units DEV for performing development processing on the wafer W are stacked in five stages in order from the bottom. Further, at the lowermost stage of the first processing unit group G1 and the second processing unit group G2, there are chemical chambers CHM for supplying various processing liquids to the liquid processing units in the processing unit groups G1 and G2, respectively. Is provided.

  On the other hand, as shown in FIG. 3, in the third processing unit group G3, the temperature control unit TCP, the transition device TRS for delivering the wafer W, and the wafer W under high-precision temperature management are sequentially arranged from the bottom. Heat treatment units ULHP for heat treatment are stacked in nine stages.

  In the fourth processing unit group G4, for example, a high-accuracy temperature control unit CPL, a pre-baking unit PAB that heat-processes the wafer W after the resist coating process, and a post-baking unit POST that heat-processes the wafer W after the development process are provided from below. They are stacked in 10 steps in order.

  In the fifth processing unit group G5, a plurality of heat treatment units for heat-treating the wafer W, for example, a high-accuracy temperature control unit CPL, and a post-exposure baking unit PEB for heat-treating the exposed wafer W are stacked in 10 stages in order from the bottom. ing.

  A plurality of processing units are arranged on the positive side in the X direction of the first transfer unit 8 as shown in FIG. 1, for example, to hydrophobize the wafer W as shown in FIG. Adhesion units AD and heating units HP for heating the wafers W are stacked in four stages in order from the bottom. Further, as shown in FIG. 1, for example, a peripheral exposure unit WEE that selectively exposes only the edge portion of the wafer W is disposed on the back side of the second transfer unit 9.

  As shown in FIG. 1, the interface unit 4 includes a first interface unit 10 and a second interface unit 11 in order from the processing station 3 side. In the first interface unit 10, a wafer transfer arm 12 is disposed at a position corresponding to the fifth processing unit group G5. For example, buffer cassettes 13 (back side in FIG. 1) and 14 (front side in FIG. 1) are installed on both sides of the wafer transfer arm 12 in the X direction. The wafer transfer arm 12 can access the heat treatment apparatus and the buffer cassettes 13 and 14 in the fifth processing unit group G5. The second interface unit 11 is provided with a wafer transfer arm 16 that moves on a transfer path 15 provided in the X direction. The wafer transfer arm 16 is movable in the Z direction and rotatable in the θ direction, and can access the buffer cassette 14 and an exposure apparatus (not shown) adjacent to the second interface unit 11. . Therefore, the wafer W in the processing station 3 can be transferred to the exposure apparatus via the wafer transfer arm 12, the buffer cassette 14, and the wafer transfer arm 16, and the wafer W after the exposure process is transferred to the wafer transfer arm 16 and the buffer. It can be transferred into the processing station 3 via the cassette 14 and the wafer transfer arm 12.

  Next, with reference to FIG. 4, the conveyance unit, the coating processing unit, and the heating processing unit of the resist coating and developing processing system will be described. FIG. 4 is a cross-sectional view schematically showing the configuration of the transport section, the coating processing section, and the heating processing section of the resist coating and developing processing system according to the present embodiment. In FIG. 4, the flow of the exhausted gas is indicated by arrows.

  4 corresponds to the first transport unit 8 and the second transport unit 9 illustrated in FIG. 4 corresponds to the resist coating unit COT and the bottom coating unit BARC shown in FIG. 4 corresponds to the temperature adjustment unit TCP, the heat treatment unit ULHP, the high-precision temperature adjustment unit CPL, the pre-baking unit PAB, the post-baking unit POST, and the heating unit HP shown in FIG. Hereafter, the transport section shown in FIG. 4 is replaced with the first transport section 8 shown in FIG. 3, the coating processing section shown in FIG. 4, the resist coating unit COT shown in FIG. 3, and the heating processing section shown in FIG. An example of the pre-baking unit PAB shown in FIG. 3 will be described.

  In FIG. 4, the transport unit 8, the coating processing unit COT, and the heat processing unit PAB are provided at the same height, but are not limited to the case where they are provided at the same height. As long as the wafer W can be transported to the coating processing unit COT and the heat processing unit PAB by moving in the direction (vertical direction), they may be provided at different heights.

  Further, in FIG. 4, the coating processing unit COT, the transport unit 8, and the heat processing unit PAB are illustrated as being arranged in a straight line in the horizontal direction, but this is for ease of explanation, and the example shown in FIG. As described above, the coating processing unit COT, the transport unit 8, and the heat processing unit PAB may be arranged in an L shape in a plan view.

  The heating unit shown in FIG. 4 may be a heating unit HP instead of the pre-baking unit PAB. In this case, the coating unit COT, the transport unit 8 and the heating unit HP are aligned in the X direction. Array.

  The transfer unit 8 has a plurality (three in the example shown in FIG. 4) of wafer transfer arms 21 for transferring wafers. The wafer transfer arm 21 can be moved forward and backward in a plane by the slide mechanism 22, can be moved in the Z direction by the Z axis movement mechanism 23, and can be rotated around the rotation axis 25 by the rotation mechanism 24. Can do. Accordingly, the transfer unit 8 includes the wafer transfer arm 21 from the space (transfer chamber) in which the transfer unit 8 is provided to the space (application process chamber) in which the coating processing unit COT is provided or the heat processing unit PAB. The wafer can be carried in and out of the space (heat treatment chamber).

  The wafer transfer arm 21 may contain a cooling pipe (not shown) through which, for example, a refrigerant flows. In this case, the inside of the wafer transfer arm 21 is maintained at a predetermined cooling temperature, for example, 23 ° C. The wafer transfer arm 21 may be formed with a slit (not shown). In this case, the wafer transfer arm 21 does not collide with a support pin (not shown) when the wafer transfer arm 21 moves on the cup 31 of the coating processing unit COT, or the wafer transfer arm 21 moves on the hot plate 41 of the heat processing unit PAB. It is possible to prevent collision with a support pin (not shown) provided on the hot plate.

  The transfer unit 8 is accommodated in the transfer chamber 26. The transfer chamber 26 is formed so as to surround the upper side, the lower side, and the four sides of the transfer unit 8. A transfer processing chamber 28 and a coating processing chamber 27 that stores the coating processing unit COT, which will be described later, are partitioned by a first partition plate 50, and a heating processing chamber 28 that stores the transporting chamber 26 and the heating processing unit PAB, 29 is partitioned by a second partition plate 60. The first partition plate 50 is formed with a first opening 51 for carrying the wafer W in and out of the coating processing unit COT, and the second partition plate 60 carries the wafer W into the heat processing unit PAB. Second openings 61 and 62 are formed for exiting.

  The coating processing unit COT includes a cup 31, a spin chuck 32, and a nozzle 33.

  The cup 31 is disposed at the center of the coating processing unit COT and has an annular shape. The spin chuck 32 is disposed inside the cup 31 and is rotationally driven by a rotational driving means such as a motor (not shown) in a state where the wafer W is fixed and held by vacuum suction. The spin chuck 32 is driven to move up and down by an elevating drive means made of, for example, an air cylinder (not shown). The spin chuck 32 has support pins (not shown) that can move up and down to deliver the wafer W.

  The nozzle 33 supplies a chemical solution to the surface of the wafer W. The nozzle 33 is connected to a chemical solution supply source (not shown) via a chemical solution supply pipe (not shown), and is supplied with a chemical solution from the chemical solution supply source. The nozzle 33 is detachably attached to the tip of the nozzle scan arm 34. The nozzle scan arm 34 is attached to the upper end of a vertical support member 35 that can move horizontally on a guide rail (not shown) that is laid in one horizontal plane on the bottom plate of the coating processing unit COT.

  In the coating processing unit COT, a set including a nozzle 33, a nozzle scan arm 34, and a vertical support member 35 is used, for example, resist, BARC, TARC (Top Anti-Reflective Coating), SOG (Spin On Glass), or the like. A plurality of sets may be provided corresponding to the types of chemical solutions, and one type can be selected and used as necessary from among the plurality of types of chemical solutions.

  The coating processing unit COT is accommodated in the coating processing chamber 27. The coating processing chamber 27 surrounds the upper and lower sides of the coating processing unit COT, surrounds three of the four sides of the coating processing unit COT, and an opening 51 is formed on one side. One side where the opening 51 is formed is partitioned from the transfer chamber 26 by a first partition plate 50 described later.

  The coating processing chamber 27 is provided with an exhaust port (not shown) separately from the first partition plate 50 described later, and the atmosphere inside the coating processing chamber 27 is inside or outside the resist coating and developing processing device (not shown). The exhaust system provided may exhaust air through an exhaust passage connected to an exhaust port (not shown).

  Heat processing part PAB has a hot platen. Here, an example is shown in which two heat treatment sections PAB are provided one above the other, each having a heat plate 41 and 42, respectively. The hot plates 41 and 42 place a wafer W coated with chemicals such as resist, BARC, TARC, SOG, etc., and heat them to a predetermined temperature, for example, 130 ° C. The hot plates 41 and 42 have, for example, a thick disk shape, and a heater (not shown) is built in the hot plates 41 and 42, for example. With this heater, the hot plates 41 and 42 can be heated to a predetermined heating temperature, for example, 130 ° C.

  Near the center of the heat plates 41 and 42, a plurality of, for example, three through holes (not shown) are formed, and each through hole is provided with a support pin (not shown) that can be moved up and down. Thus, the wafer W may be moved up and down on the hot plates 41 and 42, and the wafer W may be transferred between the hot plates 41 and 42 and the wafer transfer arm 21 of the transfer unit 8.

  The heat plates 41 and 42 of the heat treatment part PAB are accommodated in two heat treatment chambers 28 and 29 that are provided so as to overlap each other in the vertical direction. The heat treatment chambers 28 and 29 surround the upper and lower sides of the hot plates 41 and 42, respectively, and surround three of the four sides of the hot plates 41 and 42, and openings 61 and 62 are formed on one side, respectively. Has been. One of the openings 61 and 62 is formed by a second partition plate 60 described later. As a result, the heat treatment unit PAB including the hot plates 41 and 42 is partitioned from the transfer chamber 26 in which the transfer unit 8 is provided by a second partition plate 60 described later.

  In addition, an exhaust port is provided in a part of the heat treatment chambers 28 and 29, and the atmosphere inside the exhaust chamber is an exhaust gas connected to the exhaust port by an exhaust system provided inside or outside a resist coating and developing treatment apparatus (not shown). The air may be exhausted through the flow paths 43 and 44.

  The hot plates 41 and 42 are, for example, a lid that can move up and down, and a support ring that is located below the lid and is integrated with the hot plate 41 and 42 to form a processing container. You may be surrounded by the processing container comprised by these. In this case, the outside of the processing container can be enclosed to form a heat treatment chamber.

  Next, the first partition plate 50 and the second partition plate 60 will be described with reference to FIG.

  As described above, the transfer chamber 26 and the coating processing chamber 27 are partitioned by the first partition plate 50, and the transfer section 8 receives the wafer W by the wafer transfer arm 21 on the first partition plate 50. A first opening 51 for loading / unloading to / from 27 is formed. As shown in FIG. 4, the first partition plate 50 is provided with a first exhaust hole 52 for exhausting the atmosphere of the coating processing chamber 27, which is a space in which the coating processing unit COT is provided. The first exhaust hole 52 can be provided around the first opening 51, and in particular, can be provided on the inner peripheral surface of the first opening 51. Further, the first exhaust holes 52 can be provided on the surface on the application processing unit COT side and the surface on the transport unit 8 side of the first partition plate 50.

  Inside the first partition plate 50, the first exhaust hole 52, the coating processing chamber 27 that is a space in which the coating processing unit COT is provided, and the transfer chamber 26 in which the transfer unit 8 is provided are exhausted. A first exhaust flow path 53 is provided to connect the exhaust system to be operated. Thereby, the mist of the chemical solution can be sucked into the first exhaust flow path 53 formed inside the first partition plate 50 around the first opening 51.

  As shown in FIG. 4, the second partition plate 60 is provided with a second exhaust hole 63 for exhausting the atmosphere of the heat treatment chambers 28 and 29, which is a space in which the heat treatment portion PAB is provided. It has been. The second exhaust holes 63 can be provided around the second openings 61 and 62, and in particular, can be provided on the inner peripheral surfaces of the second openings 61 and 62. The second exhaust holes 63 can be provided on the surface of the second partition plate 60 on the side of the heat treatment unit PAB and the surface on the side of the transport unit 8.

  Inside the second partition plate 60, the second exhaust hole 63, the heat treatment chambers 28 and 29, which are spaces in which the heat treatment portion PAB is provided, and the transfer chamber 26 in which the transfer portion 8 is provided. A second exhaust passage 64 for connecting the exhaust system to the exhaust system is provided. Thereby, the mist of the chemical solution can be sucked into the second exhaust flow path 64 formed inside the second partition plate 60 around the second openings 61 and 62.

  Further, as shown in FIG. 4, a third exhaust flow path 71 partitioned by a third partition plate 70 that is a floor surface of the transfer chamber 26 is provided under the floor of the transfer chamber 26. The third partition plate 70 is provided with a third exhaust hole 72 for exhausting the atmosphere in the transfer chamber 26 through the third exhaust passage 71. Further, the first exhaust flow path 53 joins the second exhaust flow path 64 via the third exhaust flow path 71 between the exhaust system and is provided under the heat treatment chambers 28 and 29 and the like. The air is exhausted by the fan 30a provided in the exhaust passage chamber 30 and further exhausted to the exhaust system. Since the exhaust passage chamber 30 is on the back side of the resist coating and developing treatment system 1, it passes through the lower part of the transfer chamber 26 and the like and is discharged to the back side of the resist coating and developing treatment system 1.

  Next, with reference to FIG.5 and FIG.6, the structure of a 1st partition plate, a 2nd partition plate, and a 3rd partition plate is demonstrated.

  FIG. 5 is a front view and a side view showing the configuration of the partition plate of the resist coating and developing treatment system according to the present embodiment, and FIG. 6 is a sectional view thereof. FIG. 5 shows a front view when the first partition plate is viewed from the direction of the application processing unit on the right side of the paper surface, and the first partition plate is viewed from the direction orthogonal to the direction of the application processing unit on the left side of the paper surface in the horizontal plane. A side view when viewed is shown. 6 is a cross-sectional view corresponding to each of the front view and the side view of FIG. 5. The right side of the drawing shows a cross-sectional view along the line AA ′ in the side view of FIG. Sectional drawing which follows the BB 'line in a front view of FIG. In FIGS. 5 and 6, the flow of the exhausted gas is indicated by arrows.

  As shown in FIG. 5, the 1st partition plate 50 has the 1st opening part 51 which has a rectangular shape in the center part. The first opening 51 is for the transfer unit 8 to carry in and out of the coating processing unit COT while the wafer transfer arm 21 holds the wafer W so that the surface of the wafer W is parallel to the horizontal plane. The opening width dimension is smaller than the opening width dimension in the vertical direction. Specifically, for example, the horizontal opening width dimension can be 350 mm, and the vertical opening width dimension can be 30 mm. Note that the surface of the wafer W held by the wafer transfer arm 21 may not be parallel to the horizontal plane, but may be perpendicular to the horizontal plane, or may have a predetermined angle with the horizontal plane. In this case, the inclination angle from the horizontal plane of the long side of the first opening 51 having a rectangular shape may be determined in accordance with the shape of the wafer W to be held.

  In the present embodiment, the first partition plate 50 is divided into a plurality of parts, and different exhaust passages are provided for each of the divided parts. Accordingly, the first exhaust passage 53 is divided into a plurality of exhaust passages corresponding to each portion where the first partition plate 50 is divided.

  In the example shown in FIGS. 5 and 6, the first partition plate 50 includes an upper surface 51 a, a lower surface 51 b, a first side surface 51 c, and a second among the inner peripheral surfaces of the first opening 51 having a rectangular shape. Corresponding to the side surface 51d, it is divided into four parts, a first part 50a, a second part 50b, a third part 50c, and a fourth part 50d. Accordingly, the first exhaust flow path 53 corresponds to the upper surface 51a, the lower surface 51b, the first side surface 51c, and the second side surface 51d of the inner peripheral surface of the first opening. It is divided into a first flow path portion 53a, a second flow path portion 53b, a third flow path portion 53c, and a fourth flow path portion 53d. The first to fourth flow path portions 53a to 53d are connected to and merged with the third exhaust flow path 71 via the first to fourth connection flow paths 54a to 54d, respectively.

  The shape and size of the first exhaust holes 52 are not particularly limited, but for example, circular holes having a diameter of 3 mm formed on the surface of the first partition plate 50 at 50 mm vertical and horizontal intervals, or 50 mm vertical and horizontal intervals. A rectangular hole of 5 mm square formed in can be used. Further, the exhaust flow rate of the first exhaust flow path 53 can be set to 500 L / min.

  Further, a filter such as a chemical filter may be provided inside the first exhaust passage.

  The shape and structure of the first partition plate 50 described above are the same for the second partition plate 60. That is, the second openings 61 and 62 having a rectangular shape are formed corresponding to the heat treatment part PAB. The second openings 61 and 62 are also used for the transfer unit 8 to carry in and out of the heat treatment unit PAB while holding the wafer transfer arm 21 so that the surface of the wafer W is parallel to the horizontal plane. The opening width dimension in the direction is smaller than the opening width dimension in the vertical direction. Specifically, similarly to the first partition plate 50, for example, the horizontal opening width dimension can be 350 mm, and the vertical opening width dimension can be 30 mm. Further, the surface of the wafer W held by the wafer transfer arm 21 is not parallel to the horizontal plane and may be perpendicular to the horizontal plane, or may have a predetermined angle with the horizontal plane. The same as the partition plate 50.

  The second partition plate 60 may also be divided into a plurality of parts, and different exhaust flow paths may be provided for each of the divided parts. The second exhaust flow path 64 may also be divided into a plurality of exhaust flow paths corresponding to the respective parts into which the second partition plate 60 is divided. For example, among the inner peripheral surfaces of the second openings 61 and 62 having a rectangular shape, it may be divided into four portions corresponding to the upper surface, the lower surface, the first side surface, and the second side surface. Further, the shape and size of the second exhaust hole 63 can be the same as the shape and size of the first exhaust hole 52. Further, the shape and size of the third exhaust hole 72 can be the same as the shape and size of the first exhaust hole 52.

  Further, a filter such as a chemical filter may be provided inside the second exhaust passage.

  According to the present embodiment, the first partition plate 50 in which the first opening 51 is formed is provided between the transfer chamber 26 and the coating processing chamber 27, and the periphery of the first opening 51, for example, A first exhaust hole 52 is formed in the inner peripheral surface of the first opening 51.

  When the coating process is performed by supplying the chemical solution to the surface of the wafer W by the coating processing unit COT, the chemical solution supplied to the surface of the wafer W rotating at high speed may scatter from the surface of the wafer W as mist. In this case, when the wafer transfer arm 21 is advanced from the transfer chamber 26 to the coating processing chamber 27 and the wafer W subjected to the coating process is to be carried out of the coating processing unit COT by the wafer transfer arm 21, the coating processing chamber is used. In some cases, the mist of the chemical solution contained in the atmosphere in 27 flows out from the coating processing chamber 27 to the transfer chamber 26 as the wafer transfer arm 21 moves in the horizontal plane.

  However, in the present embodiment, the first exhaust hole 52 is formed around the first opening 51, and the exhaust is performed by the first exhaust passage 53 provided inside the first partition plate 50. . Therefore, the mist that flows out of the coating processing chamber 27 into the transfer chamber 26 as the wafer transfer arm 21 moves is formed around the first opening 51 when crossing the first opening 51. The first exhaust hole 52 is sucked and exhausted through the first exhaust passage 53. Accordingly, it is possible to prevent the mist of the chemical solution from flowing out from the area including the coating processing unit COT (coating processing chamber 27) to the area including the transporting unit 8 (transporting chamber 26).

  Even when the pressure in the coating processing chamber 27 is set higher than the pressure in the transfer chamber 26 in order to reduce dust in the coating processing chamber 27 as much as possible, the inside of the coating processing chamber 27 enters the transfer chamber 26. Since the mist of the chemical solution to be moved due to the pressure difference is sucked by the first opening 51, the chemical solution mist is included in the area including the transport unit 8 from the area including the coating processing unit COT (coating processing chamber 27) (transporting). Outflow to the chamber 26) can be prevented.

  In the present embodiment, the mist exhausted from the first exhaust hole 52 passes through the first exhaust passage 53 and the third exhaust passage 71 provided under the floor of the transfer chamber 26 and the like. The air is exhausted by a fan 30a provided in an exhaust passage chamber 30 provided under the heat treatment chambers 28 and 29, and further exhausted to an exhaust system. Therefore, the mist once exhausted through the first exhaust flow path 53 does not return from the floor surface of the transfer chamber 26 or the like to another processing chamber in the coating and developing processing system.

  In the present embodiment, the first exhaust flow path 53 is divided into a plurality of parts, and the exhaust does not merge between the divided parts. It is possible to prevent the chemical liquid mist from flowing back and diffusing. Therefore, when the wafer W is transferred from the coating processing unit COT to the wafer transport arm 21 of the transporting unit 8 and the wafer W is unloaded from the coating processing unit COT, a mist or the like of a chemical solution flows from the coating processing chamber 27 to the transporting chamber 26. The fear can be further reduced. Further, the positive pressure adjustment for making the processing chamber a positive pressure with respect to the transfer chamber may not be performed, or even if the positive pressure adjustment is performed, it may not be performed precisely.

  In the present embodiment, the first partition plate 50 is not provided with a shutter having a drive mechanism. Therefore, particles are not generated when the shutter is opened and closed.

  Furthermore, according to the present embodiment, the second partition plate 60 in which the second openings 61 and 62 are formed is provided between the transfer chamber 26 and the heat treatment chambers 28 and 29, and the second partition plate 60 is provided. A second exhaust passage 63 is formed in the second partition plate 60 by forming a second exhaust hole 63 in the periphery of the openings 61, 62, for example, on the inner peripheral surface of the second openings 61, 62. Exhaust by. Therefore, when the mist that is about to flow out of the transfer chamber 26 into the heat treatment chambers 28 and 29 with the movement of the wafer transfer arm 21 crosses the second openings 61 and 62, the second opening 61. , 62 is sucked by the second exhaust hole 63 formed around the periphery of the gas, and is exhausted through the second exhaust passage 64. Therefore, even when a part of the chemical mist generated in the coating processing chamber 27 flows out into the transfer chamber 26, the chemical solution mist includes an area including the transfer processing unit COT (the coating processing chamber 27) to an area including the transfer unit 8 ( It is possible to prevent outflow to the area (heat treatment chambers 28 and 29) including the heat treatment portion PAB through the transfer chamber 26).

  In the present embodiment, the second partition plate 60 is not provided with a shutter having a drive mechanism. Therefore, particles are not generated when the shutter is opened and closed.

The coating processing unit according to the present embodiment corresponds to the liquid processing unit in the present invention, and the resist coating and developing processing system according to the present embodiment corresponds to the liquid processing system according to the present invention. The liquid processing unit and the liquid processing system in the present invention only need to include a processing apparatus that may generate mist or particles. For example, it may include a spin coater, a dip coater, and the like, and may include a coating processing apparatus that coats a wafer using a chemical solution such as resist, BARC, TARC, or SOG. Further, it may include a liquid processing apparatus for developing or acid-treating a wafer using a developing solution such as a developer or a chemical solution such as a solution containing an acid. Alternatively, it may include a cleaning processing apparatus for cleaning the wafer, such as a spin rinse process station and a pre-post immersion rinse station.
(Modification of the first embodiment)
Next, a resist coating and developing treatment system according to a modification of the first embodiment will be described with reference to FIGS.

  FIG. 7 is a front view and a side view showing the configuration of the partition plate of the resist coating and developing treatment system according to this modification, and FIG. 8 is a sectional view thereof. FIG. 7 shows a front view when the first partition plate is viewed from the direction of the coating treatment unit on the right side of the paper, and the first partition plate is viewed from the direction orthogonal to the direction of the coating processing unit on the left side of the paper in the horizontal plane. A side view when viewed is shown. 8 is a cross-sectional view corresponding to each of the front view and the side view of FIG. 7. The right side of the drawing shows a cross-sectional view along the line AA ′ in the side view of FIG. Sectional drawing which follows the BB 'line in a front view of FIG. 7 and 8, the flow of the exhausted gas is indicated by arrows. In the following text, the same reference numerals are given to the parts described above, and the description may be omitted (the same applies to the following embodiments and modifications).

  The resist coating and developing processing system according to this modification is different from the resist coating and developing processing system according to the first embodiment in that the partition plate is not divided into a plurality of portions.

  Regarding the configuration method of the resist coating and developing treatment system according to this modification other than the dividing method of the partition plate, the liquid processing system, the transport unit, and the liquid processing described in the first embodiment with reference to FIGS. Part and the heat treatment part. In addition, the first opening having a rectangular shape may be formed in the central portion of the first partition plate in the same manner as in the first embodiment.

  On the other hand, in this modified example, as shown in FIGS. 7 and 8, the first partition plate 50 is provided with the same exhaust flow path 53 without being divided into a plurality of portions. In the first embodiment, the first exhaust flow path is divided into first to fourth portions, and in the present modification, the upper surface 51a and the lower surface of the first opening 51 are different. 51b, the first side surface 51c, and the second side surface 51d are all in communication with each other via a first exhaust passage 53 provided inside the first partition plate 50. The first exhaust flow channel 53 is dispersed to the first to fourth flow channels 54a to 54d and connected to the third exhaust flow channel 71, but is connected to the third exhaust flow channel 71 and joined again. To do.

  Moreover, the 2nd partition plate 60 is not divided | segmented into several parts, but the same exhaust flow path may be provided.

  In the present modification as well, although the first exhaust flow path 53 is not divided, the mist that tends to flow out of the coating processing chamber 27 into the transfer chamber 26 as the wafer transfer arm 21 moves is the first opening. When crossing the portion 51, the air is sucked through the first exhaust holes 52 formed around the first opening 51 and is exhausted through the first exhaust passage 53. Accordingly, it is possible to prevent the mist of the chemical solution from flowing out from the area including the coating processing unit COT (coating processing chamber 27) to the area including the transporting unit 8 (transporting chamber 26).

Similarly to the first embodiment, the coating processing section and the resist coating and developing processing system according to this modification also correspond to the liquid processing section and the liquid processing system in the present invention, and use various chemical solutions. It may include a coating processing apparatus for coating a wafer, a liquid processing apparatus for developing or acid-treating a wafer using various chemicals, and a cleaning processing apparatus for cleaning the wafer using various cleaning liquids. .
(Second Embodiment)
Next, a resist coating / developing system according to the second embodiment will be described with reference to FIG.

  FIG. 9 is a cross-sectional view schematically showing the configuration of the transport section and the coating processing section of the resist coating and developing processing system according to the present embodiment.

  The resist coating and developing system according to the present embodiment is different from the resist coating and developing system according to the first embodiment in that the partition plate is not provided between the transfer chamber and the heat processing chamber. .

  The resist coating and developing processing system according to the present embodiment can be the same as the liquid processing system described with reference to FIGS. However, the resist coating and developing treatment system according to the present embodiment does not need to be provided with the heat treatment part PAB. In addition, the first opening 51 having a rectangular shape may be formed in the central portion of the first partition plate 50 in the same manner as in the first embodiment.

  On the other hand, in the present embodiment, as shown in FIG. 9, the transfer chamber and the heat treatment chamber are not partitioned by the partition plate, and the transfer chamber 26 and the coating treatment chamber 27 are partitioned by the partition plate. Therefore, only the first partition plate 50 and the third partition plate 70 in the first embodiment are provided, and the first exhaust flow path 53 is below the floor of the transfer chamber 26 between the exhaust system and the first exhaust flow path 53. The air is exhausted by the fan 30a provided in a portion other than the transfer chamber 26 and the coating processing chamber 27 through the third exhaust flow path 71 provided, and further exhausted to the exhaust system. The third exhaust channel 71 is partitioned from the transfer chamber 26 by a third partition plate 70 that is a floor plate of the transfer chamber 26, and a third exhaust hole 72 for exhausting the atmosphere of the transfer chamber 26 is provided. This is the same as in the first embodiment.

  Also in the present embodiment, when the mist that tries to flow out from the inside of the coating processing chamber 27 into the transfer chamber 26 as the wafer transfer arm 21 moves, when the first opening 51 is crossed. Is sucked through the first exhaust hole 52 formed in the periphery of the gas and is exhausted through the first exhaust passage 53. Accordingly, it is possible to prevent the mist of the chemical solution from flowing out from the area including the coating processing unit COT (coating processing chamber 27) to the area including the transporting unit 8 (transporting chamber 26).

Similarly to the first embodiment, the coating processing section and the resist coating and developing processing system according to the present embodiment correspond to the liquid processing section and the liquid processing system in the present invention, and use various chemical solutions. A coating processing apparatus for coating a wafer, a liquid processing apparatus for developing or acid-treating a wafer using various chemical solutions, and a cleaning processing apparatus for cleaning a wafer using various cleaning liquids. Good.
(Modification of the second embodiment)
Next, with reference to FIG. 10, a resist coating and developing system according to a modification of the second embodiment will be described.

  FIG. 10 is a cross-sectional view schematically showing the configuration of the transport section and the coating processing section of the resist coating and developing processing system according to this modification.

  The resist coating and developing processing system according to this modification is different from the resist coating and developing processing system according to the second embodiment in that no exhaust hole is provided in the surface of the first partition plate on the transport unit side. .

  The resist coating and developing treatment system according to this modification can also be the same as the liquid treatment system described with reference to FIGS. In addition, the first opening 51 having a rectangular shape may be formed in the central portion of the first partition plate 50 in the same manner as in the first embodiment.

  On the other hand, in this modified example, as shown in FIG. 10, no exhaust hole is provided in the surface of the first partition plate 50 on the side of the conveyance unit 8. Further, no exhaust hole is provided in the floor surface of the transfer chamber 26. Therefore, in the present modification, the first exhaust holes 52 are provided on the inner peripheral surface of the first opening 51 and the surface of the first partition plate 50 on the coating processing unit COT side.

  Also in this modification, the mist that tends to flow out of the coating processing chamber 27 into the transfer chamber 26 with the movement of the wafer transfer arm 21 crosses the first opening 51 when the first opening 51 is moved. The air is sucked through the first exhaust hole 52 formed on the inner peripheral surface, and exhausted through the first exhaust passage 53. In addition, since the first exhaust hole 52 is formed on the surface of the first partition plate 50 on the side of the application processing unit COT, the mist of the chemical solution is also generated around the first opening 51 in the first partition plate. 50 is sucked into the first exhaust flow path 53 formed inside 50, so that the mist of the chemical solution is moved from the area including the application processing unit COT (application processing chamber 27) to the area including the transfer unit 8 (transfer chamber 26). It can prevent outflow.

Similarly to the second embodiment, the coating processing unit and the resist coating and developing processing system according to this modification also correspond to the liquid processing unit and the liquid processing system in the present invention, and use various chemical solutions. It may include a coating processing apparatus for coating a wafer, a liquid processing apparatus for developing or acid-treating a wafer using various chemicals, and a cleaning processing apparatus for cleaning the wafer using various cleaning liquids. .
(Third embodiment)
Next, a resist coating and developing treatment system according to the third embodiment will be described with reference to FIG.

  FIG. 11 is a cross-sectional view schematically showing the configuration of the transport unit and the heat treatment unit of the resist coating and developing treatment system according to the present embodiment.

  The resist coating and developing system according to the present embodiment is different from the resist coating and developing system according to the first embodiment in that the partition plate is not provided between the transfer chamber and the coating processing chamber. .

  The resist coating and developing processing system according to the present embodiment can be the same as the liquid processing system described with reference to FIGS. However, the resist coating and developing processing system according to the present embodiment does not have to be provided with the coating processing unit COT. Moreover, it can be made the same as that of 1st Embodiment that the 2nd opening parts 61 and 62 are formed in the 2nd partition plate 60. FIG.

  On the other hand, in the present embodiment, as shown in FIG. 11, the transfer chamber and the coating treatment chamber are not partitioned by the partition plate, and the transfer chamber 26 and the heat treatment chambers 28 and 29 are partitioned by the partition plate. Therefore, only the second partition plate 60 in the first embodiment is provided, and the second exhaust flow path 64 is exhausted by the fan 30a provided in a portion other than the transfer chamber 26 and the heat treatment chambers 28 and 29. And exhausted to the exhaust system.

  When the wafer W is placed on the hot plates 41 and 42 and heat treatment is performed by the heat treatment unit PAB, the chemical solution supplied to the surface of the wafer W may scatter from the surface of the wafer W as mist or particles. In this case, when the wafer transfer arm 21 is advanced from the transfer chamber 26 to the heat treatment chambers 28 and 29 and the wafer W that has been subjected to the heat treatment is about to be carried out of the heat treatment portion PAB by the wafer transfer arm 21, Mist or particles contained in the atmosphere in the processing chambers 28 and 29 may flow out from the heat processing chambers 28 and 29 to the transfer chamber 26 as the wafer transfer arm 21 moves in the horizontal plane.

  However, in the present embodiment, the second exhaust holes 63 are formed around the second openings 61 and 62, and the exhaust is performed by the second exhaust flow path 64 provided in the second partition plate 60. I do. Therefore, when the mist that is about to flow out of the heat treatment chambers 28 and 29 into the transfer chamber 26 with the movement of the wafer transfer arm 21 crosses the second openings 61 and 62, the second opening 61. , 62 is sucked by the second exhaust hole 63 formed around the periphery of the gas, and is exhausted through the second exhaust passage 64. Therefore, it is possible to prevent mist or particles from flowing out from the area including the heat processing unit PAB (heat processing chambers 28 and 29) to the area including the transport unit 8 (transfer chamber 26).

The resist coating and developing system according to the present embodiment corresponds to the liquid processing system in the present invention. In addition, the heat treatment unit according to the present embodiment is a wafer using a wide variety of methods, such as a heat treatment unit that is placed on a hot plate and heat-treated, a heat treatment unit that heat-treats the wafer with a heating lamp, or the like. The heat processing part which heat-processes may be sufficient.
(Modification of the third embodiment)
Next, referring to FIG. 12, a resist coating and developing system according to a modification of the third embodiment will be described.

  FIG. 12 is a cross-sectional view schematically showing the configuration of the transport unit and the heat treatment unit of the resist coating and developing treatment system according to this modification.

  The resist coating and developing system according to this modification is different from the resist coating and developing system according to the third embodiment in that no exhaust hole is provided in the surface of the second partition plate on the side of the conveying unit. .

  The resist coating and developing treatment system according to this modification can also be the same as the liquid treatment system described with reference to FIGS. In addition, the second opening having a rectangular shape may be formed in the second partition plate in the same manner as in the second embodiment.

  On the other hand, in this modification, as shown in FIG. 12, no exhaust hole is provided on the surface of the second partition plate 60 on the side of the conveyance unit 8. Therefore, in the present modification, the second exhaust holes 63 are provided on the inner peripheral surfaces of the second openings 61 and 62 and the surface of the second partition plate 60 on the heat treatment unit PAB side.

  Also in this modification, mist or particles that are about to flow out of the heat treatment chambers 28 and 29 into the transfer chamber 26 with the movement of the wafer transfer arm 21 pass through the second openings 61 and 62 when the The second exhaust holes 63 formed in the inner peripheral surfaces of the two openings 61 and 62 are sucked and exhausted through the second exhaust passage 64. Further, since the second exhaust hole 63 is formed on the heat treatment section PAB side of the second partition plate 60, the mist of the chemical solution is also generated around the second openings 61 and 62 in the second partition plate. Since the liquid exhaust mist is sucked into the second exhaust passage 64 formed inside 60, the chemical solution mist is included in the area including the heat processing section PAB (the heat processing chambers 28 and 29) and the area including the transport section 8 (the transfer chamber 26). ) Can be prevented.

  Similarly to the third embodiment, the resist coating and developing processing system according to this modification also corresponds to the liquid processing system according to the present invention. In addition, the heat treatment unit according to this modification includes a heat treatment unit that is placed on a hot plate and heat-treats, a heat treatment unit that heat-treats the wafer with a heating lamp, and the like, and a wide variety of other methods. The heat processing part which heat-processes may be sufficient.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

  Further, the liquid processing system according to the present invention includes not only a resist coating and developing processing apparatus, but also a substrate cleaning apparatus, a film forming apparatus, an etching apparatus, and other various apparatuses as long as the processing system includes an apparatus that generates mist or particles. It is possible to apply to the processing system which contains. That is, the present invention separates a processing unit that processes a substrate, a transfer unit that carries the substrate in and out of the processing unit, and the processing unit and the transfer unit, and the transfer unit transfers the substrate to the substrate. And a partition plate provided with an opening for carrying in and out of the processing unit, and the partition plate is provided with an exhaust hole for exhausting the atmosphere of the space in which the processing unit is provided. It can be applied to the system.

  Furthermore, the present invention can be applied to an apparatus including a step of transporting a semiconductor substrate, a glass substrate, and other various substrates.

8 1st conveyance part (conveyance part)
26 Transfer chamber 27 Coating treatment chamber (space)
28, 29 Heat treatment chamber 50 First partition plate (partition plate)
51 1st opening part (opening part)
52 1st exhaust hole 53 1st exhaust flow path 60 2nd partition plate 70 3rd partition plate COT Application | coating process part (liquid process part)

Claims (5)

A liquid processing unit for liquid processing a substrate using a chemical solution;
A transport unit that carries the substrate into and out of the liquid processing unit;
A partition plate provided with an opening for partitioning the liquid processing unit and the transport unit, and for the transport unit to carry the substrate into and out of the liquid processing unit ,
A plurality of exhaust holes provided on a surface of the partition plate on the liquid processing unit side and an inner peripheral surface of the opening, and for exhausting an atmosphere in a space in which the liquid processing unit is provided ;
Wherein provided in the partition plate, the liquid processing system characterized the exhaust passage communicating with a plurality of the exhaust holes Ru with a <br/>, that. The liquid processing system according to claim 1, further comprising a plurality of exhaust holes that are provided on a surface of the partition plate on the side of the transport unit and exhaust the atmosphere of the space in which the transport unit is provided . The partition plate is divided into a plurality of parts,
The liquid processing system according to claim 1 or claim 2, characterized in that the exhaust flow path that is different for each divided portion is provided. A heat treatment unit for placing the substrate on a hot plate and performing heat treatment ;
With partitioning between the transport unit and the pre-Symbol heating unit, and a second partition plate second opening for the conveying unit loading and unloading the substrate to the heating unit is provided,
A plurality of second exhaust holes that are provided on the surface of the second partition plate on the side of the heat treatment unit and on the inner peripheral surface of the second opening, and exhaust the atmosphere of the space in which the heat treatment unit is provided. When,
Wherein provided in the partition plate, Ru with a <br/> a second exhaust passage communicating with a plurality of the second exhaust hole, any one of claims 1 to 3, characterized in that The liquid processing system according to one item . 5. The apparatus according to claim 1 , further comprising a third partition plate provided under the floor of the transfer unit and provided with a plurality of third exhaust holes for exhausting the atmosphere in the transfer unit. The liquid processing system as described in any one of Claims .

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