JP5424823B2 - Semiconductor manufacturing apparatus and semiconductor processing method - Google Patents

Semiconductor manufacturing apparatus and semiconductor processing method Download PDF

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JP5424823B2
JP5424823B2 JP2009257963A JP2009257963A JP5424823B2 JP 5424823 B2 JP5424823 B2 JP 5424823B2 JP 2009257963 A JP2009257963 A JP 2009257963A JP 2009257963 A JP2009257963 A JP 2009257963A JP 5424823 B2 JP5424823 B2 JP 5424823B2
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plasma
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洋二 高橋
勤 田内
浩一 山本
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Hitachi High Tech Corp
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Description

本発明は、デバイスの微細化・薄膜化、あるいはウェハ大口径化が進むプロセス処理において、終点検出を安価に実現可能な半導体製造装置及び半導体処理方法に関するものである。   The present invention relates to a semiconductor manufacturing apparatus and a semiconductor processing method capable of detecting an end point at a low cost in process processing in which device miniaturization / thinning or wafer diameter increases.

プラズマを利用して半導体ウェハを処理するエッチング装置が広く利用されており、その一つにECR(電子サイクロトロン共鳴)方式のエッチング装置がある。この方式の一例を図1に示す。   Etching apparatuses that process semiconductor wafers using plasma are widely used, and one of them is an ECR (electron cyclotron resonance) type etching apparatus. An example of this method is shown in FIG.

チャンバー1の外部に配置したソレノイドコイル2,3に、ソレノイドコイル用直流電源4,5よりそれぞれ直流電流を流して、チャンバー1内に磁場を形成する。また、発振器6に発振器用直流電源7より高電圧を印加して例えばマイクロ波を発生させ、チャンバー1内に導入する。   A direct current is supplied from solenoid coil DC power supplies 4 and 5 to solenoid coils 2 and 3 arranged outside the chamber 1 to form a magnetic field in the chamber 1. Further, a high voltage is applied to the oscillator 6 from the DC power supply 7 for the oscillator to generate, for example, a microwave and introduce it into the chamber 1.

これらマイクロ波と磁場との相乗効果で電子サイクロトロン共鳴(ECR)を生じ、プロセスガス流量コントローラ4を介してチャンバー1に導入したプロセスガス15をプラズマ化しECRプラズマ16を生成する。   Electron cyclotron resonance (ECR) is generated by the synergistic effect of the microwave and the magnetic field, and the process gas 15 introduced into the chamber 1 via the process gas flow rate controller 4 is converted into plasma to generate ECR plasma 16.

電極7には静電吸着電源8より直流電圧を印加して半導体ウェハ10を電極に吸着させると共に、高周波バイアス電源9より高周波電力を印加しており、プラズマ中のイオンを半導体ウェハ10に対し、垂直に引き込み、かつ、入射イオンエネルギーを独立制御することで、加工精度の高い異方性エッチングを実現する。   A DC voltage is applied to the electrode 7 from the electrostatic adsorption power source 8 to adsorb the semiconductor wafer 10 to the electrode, and high frequency power is applied from the high frequency bias power source 9, and ions in the plasma are applied to the semiconductor wafer 10. Anisotropic etching with high processing accuracy is realized by drawing vertically and independently controlling the incident ion energy.

さらに、ECRプラズマ16についてプラズマ発光を採取する発光ピックアップ11より得た信号を発光分光分析器12で分析することによりエッチングの終点を判定し、エッチング処理を切り替え、あるいは終了処理に移行する。   Further, the signal obtained from the light emission pickup 11 that collects the plasma emission of the ECR plasma 16 is analyzed by the emission spectroscopic analyzer 12 to determine the end point of the etching, and the etching process is switched or the process is shifted to the end process.

通常、エッチング処理は複数の処理ステップから成り、各々の処理ステップについて処理時間、真空容器内の圧力、ソレノイドコイル2,3に流す直流電流の強度、マイクロ波電力の強度、プロセスガスの導入量、電極に印加する高周波電力の強度ほか数多くのパラメータ設定を予め決めておく。   Usually, the etching process consists of a plurality of process steps, and for each process step, the processing time, the pressure in the vacuum vessel, the intensity of the direct current flowing through the solenoid coils 2 and 3, the intensity of the microwave power, the amount of process gas introduced, In addition to the strength of the high frequency power applied to the electrodes, a number of parameter settings are determined in advance.

そして、エッチング途中で処理ステップが切り替わると、次の処理ステップの設定に基づいて、各種パラメータの値を設定値通りとなるように制御する。このように、単一あるいは複数の処理ステップからなるエッチング処理に関する、一連のパラメータ設定を以下ではレシピと称するものとする。   Then, when the processing step is switched during the etching, various parameter values are controlled to be the set values based on the setting of the next processing step. As described above, a series of parameter settings relating to an etching process including a single process step or a plurality of process steps is hereinafter referred to as a recipe.

装置コントローラ13は、レシピに従い、順次、各構成機器への設定信号を設定すると共に、モニタ信号を監視し、何らかの構成機器の異常を検知した場合、予め決められた異常処理を行う。また、省略するが、装置コントローラ13はマンマシンインタフェース用のモニタ表示や設備側のホストコンピュータへのモニタリングデータの伝達なども行う。   The device controller 13 sequentially sets a setting signal for each component device according to the recipe, monitors the monitor signal, and performs a predetermined abnormality process when an abnormality of any component device is detected. Although omitted, the apparatus controller 13 also performs monitor display for man-machine interface and transmission of monitoring data to the host computer on the equipment side.

さて、半導体製造においては歩留まりが非常に重要であり、適切なエッチング終点判定の可否はこの歩留まりを大きく左右する。エッチング終点判定の代表例は、使用ガスや副生成物に応じてガス分子の振動や回転による励起で生じる特定の波長の光をプラズマが放射し、処理層の除去が進むにつれて、特定の波長での発光強度が変化することを利用して、エッチングする層の大部分が除去されたポイントを検出する機能である。   In semiconductor manufacturing, the yield is very important, and whether or not an appropriate etching end point can be determined greatly affects the yield. A typical example of etching end point determination is that the plasma emits light of a specific wavelength generated by excitation or vibration of gas molecules depending on the gas or by-product used, and at a specific wavelength as the processing layer is removed. This is a function for detecting a point at which most of the layer to be etched has been removed by utilizing the change in the emission intensity.

昨今の高付加価値ウェハ処理におけるエッチング終点判定はますます重要度が増してきているが、一方で、微細化・薄膜化に伴う様々なプロセス条件、言い換えると、様々なプラズマ強度分布に対して微弱な発光変化での終点判定を要する、あるいは、大口径のウェハ全体として最適な終点判定を要するなど技術的難易度は高まってきている。   While the end point of etching in high value-added wafer processing is becoming increasingly important, on the other hand, it is weak against various process conditions associated with miniaturization and thinning, in other words, various plasma intensity distributions. Technical difficulty is increasing, for example, that it is necessary to determine the end point when the light emission changes, or to determine the optimal end point for the entire large-diameter wafer.

特表2007−525019号公報Special Table 2007-525019

様々なプラズマ強度分布に対して微弱な発光変化での終点判定や大口径のウェハ全体として最適な終点判定を低コストで実現することが課題である。 It is a problem to realize an end point determination with a weak light emission change with respect to various plasma intensity distributions and an optimum end point determination for the entire large-diameter wafer at a low cost.

本発明は、プロセス条件ごとにプラズマ発光をピックアップする方向や位置を可変する手段を有することを最も主要な特徴とする。 The most important feature of the present invention is that it has means for changing the direction and position of picking up plasma emission for each process condition.

本発明の半導体製造装置は、半導体ウェハを処理するためにチャンバ内に形成したプラズマのプラズマ発光を検出して前記処理の終点判定を行う手段を備える半導体製造装置であって、前記プラズマ発光をピックアップする方向や位置を可変する手段を有することを特徴とする。 The semiconductor manufacturing apparatus of the present invention is a semiconductor manufacturing apparatus comprising means for performing end point detection of the processing to detect the plasma emission of plasma formed in the chamber for processing a semiconductor wafer, picked up the plasma emission It has the means to change the direction and position to do.

本発明の半導体製造装置は、更に、前記可変手段は発光ピックアップを固定した回転機構と、前記回転機構を駆動する手段を備えたことを特徴とする。   The semiconductor manufacturing apparatus of the present invention is further characterized in that the variable means includes a rotation mechanism to which a light emitting pickup is fixed, and means for driving the rotation mechanism.

本発明の半導体製造装置は、更に、前記回転機構の回転軸を、半導体ウェハを載置する電極の半径方向と垂直とし、前記発光ピックアップの光軸先端が前記電極の中央から外周部に可変とすることを特徴とする。   In the semiconductor manufacturing apparatus of the present invention, the rotation axis of the rotation mechanism is perpendicular to the radial direction of the electrode on which the semiconductor wafer is placed, and the tip of the optical axis of the light-emitting pickup is variable from the center to the outer periphery of the electrode. It is characterized by doing.

また、本発明の半導体処理方法は、チャンバ内に配置した半導体ウェハを処理するためにこのチャンバ内にプラズマを形成してプラズマ発光を検出して前記処理の終点判定を行う半導体処理方法であって、前記プラズマ発光をピックアップする方向や位置を処理ステップごとに可変することを特徴とする。 Further, the semiconductor processing method of the present invention is a semiconductor processing method for determining the end point of the processing by forming plasma in the chamber and detecting plasma emission in order to process the semiconductor wafer disposed in the chamber. , characterized by varying the direction and position to pick up the plasma emission for each processing step.

本発明の半導体処理方法は、更に、前記プラズマ発光による発光強度の様々な分布に応じて、中央部の発光強度が比較的強いプロセス条件では前記プラズマ発光をピックアップする方向を中央部に向け、外周部の発光強度が比較的強い条件では前記プラズマ発光をピックアップする方向を外周部に向けて、発光ピックアップが固定の場合に比べて、幅広く終点判定可能とすることを特徴とする。   In the semiconductor processing method of the present invention, the process of picking up the plasma emission is directed toward the central portion under the process conditions where the emission intensity of the central portion is relatively strong according to various distributions of the emission intensity due to the plasma emission. When the light emission intensity of the part is relatively high, the direction of picking up the plasma light emission is directed toward the outer peripheral part, and the end point can be determined more widely than when the light emission pickup is fixed.

本発明の半導体製造装置によれば、数多くの発光ピックアップ手段を備える必要がなく、ピックアップする方向や位置を可変なので、プロセス条件ごとの最適なピックアップによる終点判定を安価に実現できる利点がある。   According to the semiconductor manufacturing apparatus of the present invention, it is not necessary to provide a large number of light-emitting pickup means, and the pickup direction and position are variable. Therefore, there is an advantage that the end point determination by the optimum pickup for each process condition can be realized at low cost.

図1は、従来の半導体製造装置の一例を示すブロック図である。FIG. 1 is a block diagram showing an example of a conventional semiconductor manufacturing apparatus. 図2は、本発明の半導体製造装置の一実施例を示すブロック図である。FIG. 2 is a block diagram showing an embodiment of the semiconductor manufacturing apparatus of the present invention. 図3は、本発明の半導体製造装置の制御方法の一実施例を示すフロー図である。FIG. 3 is a flowchart showing an embodiment of the control method of the semiconductor manufacturing apparatus of the present invention.

以下、本発明の実施の形態について図面を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図2は、本発明の実施例の半導体製造装置の構成図であって、1〜16は、図2と同様であるが、一部、符号のみの表記としている。また、図1と異なる点は、ピックアップ駆動手段111を備えることである。 装置コントローラ13はピックアップ駆動手段111への設定信号を設定すると共に、モニタ信号を監視し、何らかの構成機器の異常を検知した場合、予め決められた異常処理を行う。   FIG. 2 is a configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention. Reference numerals 1 to 16 are the same as those in FIG. Further, the difference from FIG. 1 is that a pickup driving means 111 is provided. The apparatus controller 13 sets a setting signal to the pickup driving means 111 and monitors the monitor signal. When an abnormality of any component device is detected, a predetermined abnormality process is performed.

図3に、ピックアップ駆動手段111の構成例を示す。ピックアップ駆動手段111は、モータドライバ1111、エンコーダ付ステッピングモータ1112及び回転機構1113からなる。   FIG. 3 shows a configuration example of the pickup driving means 111. The pickup driving unit 111 includes a motor driver 1111, a stepping motor 1112 with an encoder, and a rotation mechanism 1113.

回転機構1113には発光ピックアップ11が実装されており、エンコーダ付ステッピングモータ1112により回転角度が制御される。上記の通り、装置コントローラ13からモータドライバ1111に回転角度の設定信号を与えると共に、実際の回転角度のモニタ信号を監視する。モータドライバ1111はエンコーダ付ステッピングモータ1112を駆動すると共に、エンコーダからの信号に基づいて実際の回転角度のモニタ信号を出力する。   The light emitting pickup 11 is mounted on the rotation mechanism 1113, and the rotation angle is controlled by a stepping motor 1112 with an encoder. As described above, the apparatus controller 13 gives a rotation angle setting signal to the motor driver 1111 and monitors the actual rotation angle monitor signal. The motor driver 1111 drives the stepping motor with encoder 1112 and outputs a monitor signal of the actual rotation angle based on the signal from the encoder.

ここで、回転機構の回転軸を、電極7(半導体ウェハ9)の半径方向と垂直とし、発光ピックアップ11の光軸先端が、電極7の中央から外周部に可変とすることが考えられる。このようにすれば、プラズマによる発光強度の様々な分布に応じて、中央部が比較的強いプロセス条件では中央に向け、外周部が比較的強い条件では外周部に向けるなどして、発光ピックアップが固定の場合に比べて、幅広く終点判定可能とすることができる。   Here, it is conceivable that the rotation axis of the rotation mechanism is perpendicular to the radial direction of the electrode 7 (semiconductor wafer 9), and the tip of the optical axis of the light emitting pickup 11 is variable from the center of the electrode 7 to the outer periphery. In this way, according to various distributions of the light emission intensity by the plasma, the light emitting pickup is directed toward the center in a relatively strong process condition at the center and toward the outer periphery in a condition where the outer periphery is relatively strong. Compared to the fixed case, the end point can be determined widely.

また、中央部向け、外周部向けなど複数位置に発光ピックアップを固定する場合に比べて、安価に終点判定を実現することができる。この場合、上記の回転角度の設定信号を、背景技術で述べたレシピのパラメータとし、処理ステップごとに発光ピックアップ11の回転角度を設定することが考えられる。さらに、半導体ウェハ9に終点判定用のサンプルパターンを設け、その位置に応じて、回転角度の設定信号を決定する運用も考えられる。   In addition, the end point determination can be realized at a lower cost than in the case where the light emitting pickups are fixed at a plurality of positions such as for the central part and the outer peripheral part. In this case, it is conceivable to set the rotation angle of the light emitting pickup 11 for each processing step using the rotation angle setting signal as a recipe parameter described in the background art. Further, it is also conceivable to provide a sample pattern for determining the end point on the semiconductor wafer 9 and determine a rotation angle setting signal according to the position.

1 チャンバー
2 ソレノイドコイル
3 ソレノイドコイル
4 ソレノイドコイル用直流電源
5 ソレノイドコイル用直流電源
6 圧力コントローラ
7 電極
8 静電吸着電源
9 高周波バイアス電源
10 半導体ウェハ
11 発光ピックアップ
12 発光分光分析器
13 装置コントローラ
14 プロセスガス流量コントローラ
15 プロセスガス
16 ECRプラズマ
111 ピックアップ駆動手段
1111 モータドライバ
1112 エンコーダ付ステッピングモータ
1113 回転機構
1 Chamber 2 Solenoid Coil 3 Solenoid Coil 4 DC Power Supply for Solenoid Coil 5 DC Power Supply for Solenoid Coil 6 Pressure Controller 7 Electrode 8 Electrostatic Adsorption Power Supply 9 High Frequency Bias Power Supply 10 Semiconductor Wafer 11 Light Emission Pickup 12 Emission Spectrometer 13 Device Controller 14 Process Gas flow controller 15 Process gas 16 ECR plasma 111 Pickup drive means 1111 Motor driver 1112 Stepping motor with encoder 1113 Rotating mechanism

Claims (2)

半導体ウェハを処理するためにチャンバ内に形成したプラズマのプラズマ発光を検出して前記処理の終点判定を行う手段を備える半導体製造装置において、
前記プラズマ発光をピックアップする方向や位置を可変する可変手段を有し、
前記可変手段は発光ピックアップを固定した回転機構と、前記回転機構を駆動する手段を備え、
前記回転機構の回転軸を、半導体ウェハを載置する電極の半径方向と垂直とし、前記発光ピックアップの光軸先端が前記電極の中央から外周部に可変とすることを特徴とする半導体製造装置。
In a semiconductor manufacturing apparatus comprising means for detecting plasma emission of plasma formed in a chamber for processing a semiconductor wafer and determining an end point of the processing,
Have a varying means for varying the direction and position to pick up the plasma emission,
The variable means includes a rotation mechanism to which a light emitting pickup is fixed, and means for driving the rotation mechanism,
A semiconductor manufacturing apparatus , wherein a rotation axis of the rotation mechanism is perpendicular to a radial direction of an electrode on which a semiconductor wafer is placed, and an optical axis tip of the light emitting pickup is variable from a center of the electrode to an outer peripheral portion .
チャンバ内に配置した半導体ウェハを処理するためにこのチャンバ内にプラズマを形成してプラズマ発光を検出して前記処理の終点判定を行う半導体処理方法において、
前記プラズマ発光をピックアップする方向や位置を処理ステップごとに可変するとともに、
前記プラズマ発光による発光強度の様々な分布に応じて、中央部の発光強度が比較的強いプロセス条件では前記プラズマ発光をピックアップする方向を中央部に向け、外周部の発光強度が比較的強い条件では前記プラズマ発光をピックアップする方向を外周部に向けて、発光ピックアップが固定の場合に比べて、幅広く終点判定可能とすることを特徴とする半導体処理方法
In a semiconductor processing method for determining a processing end point by detecting plasma emission by forming a plasma in the chamber to process a semiconductor wafer disposed in the chamber ,
While changing the direction and position of picking up the plasma emission for each processing step,
Depending on the various distributions of the emission intensity due to the plasma emission, the process conditions where the emission intensity at the center is relatively strong are directed toward the center in the process conditions for picking up the plasma emission, and the emission intensity at the outer periphery is relatively strong. A semiconductor processing method characterized in that the direction of picking up the plasma emission is directed toward the outer peripheral portion, and the end point can be determined more widely than when the light emitting pickup is fixed .
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