TWI479534B - Inductively coupled plasma processing apparatus and control method thereof (1) - Google Patents
Inductively coupled plasma processing apparatus and control method thereof (1) Download PDFInfo
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- 238000009616 inductively coupled plasma Methods 0.000 title claims description 43
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- 239000003990 capacitor Substances 0.000 claims description 101
- 230000009471 action Effects 0.000 claims description 46
- 230000005856 abnormality Effects 0.000 claims description 8
- 238000011084 recovery Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 15
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- 238000005530 etching Methods 0.000 description 4
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Description
本發明涉及電感耦合電漿處理裝置及其控制方法，更具體地說，能夠自動進行阻抗控制的電感耦合電漿處理裝置及其控制方法。The present invention relates to an inductively coupled plasma processing apparatus and a control method thereof, and more particularly to an inductively coupled plasma processing apparatus capable of automatically performing impedance control and a control method therefor.
電感耦合電漿處理裝置是在半導體和顯示器製造工藝中用於進行蝕刻工藝或沉積工藝的裝置。用於進行蝕刻工藝的電感耦合電漿處理裝置，與反應性離子蝕刻裝置或電容耦合電漿蝕刻裝置相比，其蝕刻效果非常好。Inductively coupled plasma processing devices are devices used in semiconductor and display fabrication processes to perform etching or deposition processes. The inductively coupled plasma processing apparatus for performing the etching process has a very good etching effect as compared with the reactive ion etching apparatus or the capacitive coupling plasma etching apparatus.
但是，電感耦合電漿處理裝置難以對大面積基板進行蝕刻。通常，天線設在電感耦合電漿處理裝置的真空腔室上部。為了能夠有效地對大面積基板進行蝕刻，天線的配置和阻抗的控制是非常重要的技術要素。However, it is difficult for an inductively coupled plasma processing apparatus to etch a large-area substrate. Typically, the antenna is placed in the upper portion of the vacuum chamber of the inductively coupled plasma processing apparatus. In order to effectively etch a large-area substrate, the configuration of the antenna and the control of the impedance are very important technical elements.
此外，無論多麼有效地配置天線，由於複雜而長度較長的天線結構，不能有效地進行阻抗控制。進一步，為了 對大面積基板進行蝕刻，需要按區域分別設置天線。Further, no matter how efficiently the antenna is disposed, impedance control cannot be performed efficiently due to a complicated and long antenna structure. Further, in order to To etch a large-area substrate, it is necessary to separately set the antennas by region.
此外，為了處理更大面積的基板，需要將這些螺旋天線配置在多個彼此不同區域而使用，但是這種天線的結構和用於處理大面積基板的阻抗控制上，存在更大的困難。Further, in order to process a larger-area substrate, it is necessary to arrange these helical antennas in a plurality of different regions from each other, but there is a greater difficulty in the structure of such an antenna and the impedance control for processing a large-area substrate.
在先技術文獻Prior technical literature
專利文獻Patent literature
韓國公開專利第10-2010-0053253號，“電感耦合電漿天線”Korean Patent Publication No. 10-2010-0053253, "Inductively Coupled Plasma Antenna"
本發明的目的是提供一種電感耦合電漿處理裝置，其利用電機驅動可變電容器，從而能夠同時精密地控制多個可變電容器的阻抗。SUMMARY OF THE INVENTION An object of the present invention is to provide an inductively coupled plasma processing apparatus that drives a variable capacitor with a motor so that the impedances of a plurality of variable capacitors can be precisely controlled at the same time.
本發明的電感耦合型電漿處理裝置，其包括：腔室；多個源線圈，其設置在所述腔室的上部的電介質窗的外側；可變電容器控制裝置，其包括安裝在各個所述源線圈上用於控制各個所述源線圈的阻抗的可變電容器、使所述可變電容器自動旋轉的電機以及用於檢測所述電機的旋轉的外部編碼器；多個從控制器，其對設置在各個所述源線圈上的各個所述可變電容器控裝置進行分組後，按組進行控制；主機電腦，其通過網路與所述從控制器連接，以便控制所述多個從控制器，所述從控制器從所述主機電腦接收被分組的所述可變電容器的動作最小值或設定最小值並儲存，所述從控制器從所述主機電腦接收起始序列動作命令時，驅動所述電機使 相應的所述可變電容器以動作最小值或設定最小值進行動作後，達到動作設定值。An inductively coupled plasma processing apparatus of the present invention, comprising: a chamber; a plurality of source coils disposed outside of a dielectric window of an upper portion of the chamber; and a variable capacitor control device including a variable capacitor on the source coil for controlling the impedance of each of the source coils, a motor for automatically rotating the variable capacitor, and an external encoder for detecting rotation of the motor; a plurality of slave controllers, the pair Each of the variable capacitor control devices disposed on each of the source coils is grouped and controlled by a group; a host computer connected to the slave controller via a network to control the plurality of slave controllers And the slave controller receives, from the host computer, an action minimum value or a set minimum value of the grouped variable capacitors, and stores, when the slave controller receives the start sequence motion command from the host computer, drives The motor makes The corresponding variable capacitor operates at the minimum value or the minimum value and reaches the set value of the operation.
所述設定最小值為，由用戶設定的、所述可變電容器的最小電容量與最大電容量之間的值。The set minimum value is a value between a minimum capacitance and a maximum capacitance of the variable capacitor set by a user.
在所述起始序列動作時，所述從控制器驅動所述電機，使所述可變電容器的電容量依次被設定為，大於所述設定最小值的恢復設定值、所述動作最小值、所述設定最小值、所述動作設定值。When the initial sequence is activated, the slave controller drives the motor such that the capacitance of the variable capacitor is sequentially set to be greater than the set minimum value of the restored set value, the minimum value of the action, The set minimum value and the action set value.
所述從控制器具備：中央處理器；記憶體，其儲存由所述從控制器控制的所述可變電容器的規格資訊、即所述動作最小值、所述預設值、所述恢復設定值、所述動作設定值，以及由所述外部編碼器傳送的所述檢測值的資訊；運算器，其生成電機驅動值後傳送到所述電機，並接收從所述外部編碼器傳送的檢測值。The slave controller includes: a central processing unit; a memory that stores specification information of the variable capacitor controlled by the slave controller, that is, the minimum value of the action, the preset value, and the recovery setting a value, the action set value, and information of the detected value transmitted by the external encoder; an operator that generates a motor drive value, transmits to the motor, and receives a test transmitted from the external encoder value.
通過比較所述電機驅動值和從外部編碼器傳送的檢測值來判斷電機的動作異常。所述電機的動作發生異常時，進行所述起始序列動作。The motor abnormality is judged by comparing the motor drive value with the detected value transmitted from the external encoder. When the operation of the motor is abnormal, the initial sequence operation is performed.
本發明涉及一種電感耦合型電漿處理裝置的控制方法，所述電感耦合型電漿處理裝置具備：可變電容器控制裝置，其包括安裝在各個源線圈上用於控制所述源線圈的阻抗的可變電容器、使所述可變電容器自動旋轉的電機以及檢測所述電機的旋轉的外部編碼器；多個從控制器，其對設置在所述各個所述源線圈上的各個所述可變電容器控裝置進行分組並按組進行控制；主機電腦，其通過網路與所述從控制器 連接，以便控制所述多個從控制器，所述方法的特徵在於，各個所述從控制器從所述主機電腦接收分組後的所述可變電容器的動作最小值或設定最小值後儲存，所述從控制器從所述主機電腦接收起始序列(Home sequence)動作命令時，驅動電機使相應的可變電容器以動作最小值或設定最小值進行動作後，達到動作設定值。The present invention relates to a method of controlling an inductively coupled plasma processing apparatus, the inductively coupled plasma processing apparatus comprising: a variable capacitor control device including a source coil mounted on each source coil for controlling an impedance of the source coil a variable capacitor, a motor that automatically rotates the variable capacitor, and an external encoder that detects rotation of the motor; a plurality of slave controllers that are responsive to each of the variable bodies disposed on each of the source coils The capacitor control device is grouped and controlled in groups; the host computer passes through the network and the slave controller Connecting to control the plurality of slave controllers, wherein the method is characterized in that each of the slave controllers receives the minimum value or the minimum value of the variable capacitor after the packet is received from the host computer, and stores the result. When the slave controller receives the home sequence action command from the host computer, the drive motor drives the corresponding variable capacitor to operate at the minimum value or the minimum value, and then reaches the action set value.
所述設定最小值為由用戶設定的所述可變電容器的最小電容量與最大電容量之間的值。The set minimum value is a value between a minimum capacitance and a maximum capacitance of the variable capacitor set by a user.
在所述起始序列動作時，所述從控制器驅動所述電機使所述可變電容器的電容量依次被設定為，大於所述設定最小值的恢復設定值、所述動作最小值、所述設定最小值、所述動作設定值。When the initial sequence is activated, the slave controller drives the motor to sequentially set the capacitance of the variable capacitor to be greater than the set minimum value of the restored set value, the minimum value of the action, The set minimum value and the action set value are described.
所述從控制器具備：中央處理器；記憶體，其儲存所述從控制器控制的所述可變電容器的規格資訊、即所述動作最小值、所述預設值、所述恢復設定值、所述動作設定值，以及由所述外部編碼器傳送的所述檢測值；運算器，其生成所述電機驅動值後傳送到所述電機，並接收從所述外部編碼器傳送的檢測值。The slave controller includes: a central processor; a memory that stores specification information of the variable capacitor controlled by the slave controller, that is, the minimum value of the action, the preset value, and the restored set value The action set value, and the detected value transmitted by the external encoder; an operator that generates the motor drive value, transmits the same to the motor, and receives the detected value transmitted from the external encoder .
通過比較所述電機驅動值和從外部編碼器傳送的檢測值來判斷所述電機的動作異常。所述電機動作發生異常時，進行所述起始序列動作。The malfunction of the motor is judged by comparing the motor drive value with the detected value transmitted from the external encoder. The initial sequence action is performed when an abnormality occurs in the motor operation.
本發明的電感耦合電漿處理裝置及其控制方法具有以下效果：能夠利用電機精密地控制連接在各個源線圈用於調節阻抗的可變電容器的動作，以便能夠有效地控制多個源 線圈的阻抗，並且能夠對多個可變電容器進行精密的自動控制。The inductively coupled plasma processing apparatus of the present invention and the control method therefor have the effect that the operation of the variable capacitor connected to each source coil for adjusting the impedance can be precisely controlled by the motor so that the plurality of sources can be effectively controlled The impedance of the coil and the ability to precisely control multiple variable capacitors.
A1~A9‧‧‧分割區域A1~A9‧‧‧divided area
S10~S17‧‧‧流程步驟S10~S17‧‧‧ Process steps
11‧‧‧排氣孔11‧‧‧ venting holes
10‧‧‧腔室10‧‧‧ chamber
12‧‧‧工作臺12‧‧‧Workbench
13‧‧‧靜電卡盤13‧‧‧Electrostatic chuck
14‧‧‧閘門14‧‧ ‧ gate
15‧‧‧電介質窗15‧‧‧ dielectric window
16‧‧‧源線圈設置部16‧‧‧Source coil setting section
16a‧‧‧隔壁16a‧‧‧ next door
17‧‧‧電氣元件部17‧‧‧Electrical Components Division
20‧‧‧源線圈20‧‧‧ source coil
21、22、23、24‧‧‧源線圈21, 22, 23, 24‧‧‧ source coil
30‧‧‧第一高頻電源30‧‧‧First high frequency power supply
31‧‧‧第二高頻電源31‧‧‧Second high frequency power supply
100‧‧‧可變電容器控制裝置100‧‧‧Variable Capacitor Control
110‧‧‧電機110‧‧‧Motor
120‧‧‧外部編碼器120‧‧‧External encoder
121‧‧‧圓形盤121‧‧‧round disk
121a‧‧‧檢測孔121a‧‧‧Detection hole
122‧‧‧檢測感測器122‧‧‧Detection sensor
130‧‧‧絕緣法蘭130‧‧‧Insulation flange
140‧‧‧可變電容器140‧‧‧Variable Capacitors
200‧‧‧設備網200‧‧‧Device Network
211、212‧‧‧從控制器211, 212‧‧‧ slave controller
220‧‧‧主機電腦220‧‧‧Host computer
230‧‧‧輸入輸出部230‧‧‧Input and output
圖1是本發明實施例的電感耦合電漿處理裝置的圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention.
圖2是本發明實施例的電感耦合電漿處理裝置的源線圈的立體圖。2 is a perspective view of a source coil of an inductively coupled plasma processing apparatus according to an embodiment of the present invention.
圖3是本發明實施例的設置在電感耦合電漿處理裝置的一個區域上的可變電容器控制裝置的設置狀態示意圖。Fig. 3 is a view showing the arrangement state of a variable capacitor control device provided in an area of the inductively coupled plasma processing apparatus according to an embodiment of the present invention.
圖4是本發明實施例的電感耦合電漿處理裝置的可變電容器控制裝置的圖。Fig. 4 is a view showing a variable capacitor control device of the inductively coupled plasma processing apparatus according to the embodiment of the present invention.
圖5是本發明實施例的用於控制電感耦合電漿處理裝置的可變電容器的網路構成圖。Figure 5 is a diagram showing the network configuration of a variable capacitor for controlling an inductively coupled plasma processing apparatus according to an embodiment of the present invention.
圖6是本發明實施例的用於控制電感耦合電漿處理裝置的從控制器的方框圖。Figure 6 is a block diagram of a slave controller for controlling an inductively coupled plasma processing apparatus in accordance with an embodiment of the present invention.
圖7是本發明實施例的用於說明電感耦合電漿處理裝置的控制方法的圖。Fig. 7 is a view for explaining a control method of the inductively coupled plasma processing apparatus according to an embodiment of the present invention.
下面，參照附圖說明本發明涉及的電感耦合電漿處理裝置的實施例。但是，本發明並不限定於下面公開的實施例，可以以各種形式實現，下面說明的實施例僅用於充分公開本發明，以便本領域的技術人員充分瞭解發明的保護範圍。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of an inductively coupled plasma processing apparatus according to the present invention will be described with reference to the drawings. However, the present invention is not limited to the embodiments disclosed below, and may be implemented in various forms, and the embodiments described below are only for fully exposing the present invention so that those skilled in the art can fully understand the scope of protection of the invention.
圖1是示出本發明的實施例涉及的電感耦合電漿處理裝置的圖。如圖1所示，本發明涉及的電感耦合電漿處理裝置具備腔室10，該腔室10具備閘門14，並形成有使工藝空間內部被抽成真空所需的排氣孔11。在腔室10內部具有用於放置基板(晶片或不同尺寸的透明基板)的工作臺12。在工作臺12的上部設置有用於卡緊基板的靜電卡盤13。Fig. 1 is a view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention. As shown in Fig. 1, the inductively coupled plasma processing apparatus according to the present invention includes a chamber 10 having a shutter 14 and an exhaust hole 11 required to evacuate the inside of the process space. Inside the chamber 10 is a table 12 for placing substrates (wafers or transparent substrates of different sizes). An electrostatic chuck 13 for chucking the substrate is provided at an upper portion of the table 12.
腔室10上部設置有電介質窗15，電介質窗15的上部設置有RF天線、即源線圈20。源線圈20設置在劃分成單獨空間的源線圈設置部16內。源線圈設置部16的上部設有電氣組件部17，在該電氣元件部17安裝有RF電源等的電控制裝置。A dielectric window 15 is disposed at an upper portion of the chamber 10, and an RF antenna, that is, a source coil 20 is disposed at an upper portion of the dielectric window 15. The source coil 20 is disposed in the source coil setting portion 16 which is divided into individual spaces. An electric component unit 17 is provided at an upper portion of the source coil installation portion 16, and an electric control device such as an RF power source is mounted on the electric component portion 17.
圖2是本發明實施例的電感耦合電漿處理裝置源線圈結構的立體圖。2 is a perspective view showing the structure of a source coil of an inductively coupled plasma processing apparatus according to an embodiment of the present invention.
如圖2所示，本發明的電感耦合電漿處理裝置的源線圈設置部16被劃分為9個區域A1~A9，每個區域內都設置有源線圈20。其中，位元於角落部分的4個區域A1~A4內的源線圈20與第一高頻電源30連接。位於其餘5個區域A5~A9內的源線圈20與第二高頻電源31連接。第一高頻電源30與第二高頻電源31分別發射13.56MHz的高頻。As shown in Fig. 2, the source coil setting portion 16 of the inductively coupled plasma processing apparatus of the present invention is divided into nine regions A1 to A9, and an active coil 20 is provided in each region. The source coil 20 in the four areas A1 to A4 of the corner portion is connected to the first high frequency power source 30. The source coil 20 located in the remaining five areas A5 to A9 is connected to the second high frequency power source 31. The first high frequency power source 30 and the second high frequency power source 31 respectively emit a high frequency of 13.56 MHz.
設置在每個區域A1~A9內的源線圈20又被分為第一~第四源線圈21、22、23、24等4個，並向同一方向捲繞。各源線圈21、22、23、24的端部設置有可變電容器控制裝置100。The source coil 20 provided in each of the areas A1 to A9 is further divided into four of the first to fourth source coils 21, 22, 23, and 24, and wound in the same direction. The variable capacitor control device 100 is provided at the end of each of the source coils 21, 22, 23, and 24.
圖3是本發明實施例的設置在電感耦合電漿處理裝置的一個區域中的可變電容器控制裝置的設置狀態的圖。Fig. 3 is a view showing an arrangement state of a variable capacitor control device provided in an area of the inductively coupled plasma processing apparatus according to an embodiment of the present invention.
如圖3所示，可變電容器控制裝置100設置在分佈在各個區域上的源線圈21、22、23、24的末端或中間部位。可變電容器控制裝置100也可以設置在源線圈21、22、23、24的中間或始端部位。這些可變電容器控制裝置100固定安裝在劃分各個區域A1~A9的隔壁16a上。As shown in FIG. 3, the variable capacitor control device 100 is disposed at the end or intermediate portion of the source coils 21, 22, 23, 24 distributed over the respective regions. The variable capacitor control device 100 may also be disposed at an intermediate or starting end portion of the source coils 21, 22, 23, 24. These variable capacitor control devices 100 are fixedly mounted on the partition walls 16a that partition the respective areas A1 to A9.
圖4是本發明實施例的電感耦合電漿處理裝置的可變電容器控制裝置的圖。Fig. 4 is a view showing a variable capacitor control device of the inductively coupled plasma processing apparatus according to the embodiment of the present invention.
如圖4所示，可變電容器控制裝置100包括：電機110；外部編碼器120，其設置在從電機110延伸出的旋轉軸上；絕緣法蘭130，其經過外部編碼器120並延伸；可變電容器(VVC：Vacuum Variable Capacitor)140，其從絕緣法蘭130延伸，且驅動軸與絕緣法蘭130連接；冷卻部150，其設置在可變電容器140的端部。As shown in FIG. 4, the variable capacitor control device 100 includes: a motor 110; an external encoder 120 disposed on a rotating shaft extending from the motor 110; an insulating flange 130 that extends through the external encoder 120; A variable capacitor (VVC: Vacuum Variable Capacitor) 140 extends from the insulating flange 130 and the drive shaft is coupled to the insulating flange 130; and a cooling portion 150 disposed at an end of the variable capacitor 140.
電機110採用步進電機110。外部編碼器120包含：圓盤121，在圓盤121上設有沿圓周以每隔7.2度形成的共有50個檢測孔121a；檢測感測器122，在圓盤121外周的上部和下部分別設有發光部和受光部，以便能夠檢測圓盤121上的檢測孔121a。可變電容器140同時具有Z-掃描感測器(未圖示)。The motor 110 employs a stepper motor 110. The external encoder 120 includes a disk 121 having a total of 50 detection holes 121a formed at intervals of 7.2 degrees along the circumference, and a detection sensor 122 at the upper and lower portions of the outer periphery of the disk 121, respectively. A light emitting portion and a light receiving portion are provided so as to be able to detect the detecting hole 121a on the disk 121. The variable capacitor 140 has a Z-scan sensor (not shown) at the same time.
如圖3所示，上述結構的可變電容器控制裝置100分別安裝在位於一個區域內的源線圈21、22、23、24上。因此，為了處理大面積的基板而配置天線時，可能需要使用數十個可變電容器控制裝置100。本發明的實施例共使用36個可變電容器控制裝置100。As shown in Fig. 3, the variable capacitor control device 100 of the above configuration is mounted on the source coils 21, 22, 23, 24 located in one region, respectively. Therefore, when an antenna is disposed to process a large-area substrate, it may be necessary to use dozens of variable capacitor control devices 100. A total of 36 variable capacitor control devices 100 are used in embodiments of the present invention.
所有可變電容器控制裝置100為了控制阻抗而動作 ，以便個別地控制可變電容器140以保持均勻的電漿。為此，各可變電容器140需要個別控制，而且被控制成彼此間的關聯動作有效協調，要由用戶一一手動調節這些可變電容器140來調節阻抗，效率非常低。All variable capacitor control devices 100 operate to control impedance In order to individually control the variable capacitor 140 to maintain a uniform plasma. To this end, each of the variable capacitors 140 needs to be individually controlled, and is controlled to effectively coordinate the associated actions with each other. The variable capacitors 140 are manually adjusted by the user to adjust the impedance one by one, and the efficiency is very low.
因此，在本發明中，在電感耦合電漿處理裝置內部通過網路構建控制可變電容器140的設備網(Devicenet)200，以便同時自動控制所有的可變電容器140。Therefore, in the present invention, a device network 200 that controls the variable capacitor 140 is constructed through the network inside the inductively coupled plasma processing apparatus to simultaneously automatically control all of the variable capacitors 140.
圖5是本發明實施例的用於控制可變電容器的電感耦合電漿處理裝置的網路構成圖。Fig. 5 is a view showing the network configuration of an inductively coupled plasma processing apparatus for controlling a variable capacitor according to an embodiment of the present invention.
如圖5所示，位於各個區域內的第一~第四可變電容器控制裝置100連接到第一從控制器(slave controller)211，第n-3~第n可變電容器控制裝置100連接到第M從控制器212。其中，M和n為自然數。As shown in FIG. 5, the first to fourth variable capacitor control devices 100 located in the respective areas are connected to a first slave controller 211, and the n-3th to nth variable capacitor control devices 100 are connected to The Mth slave controller 212. Among them, M and n are natural numbers.
因此，本發明實施例的可變電容器控制裝置100，可以根據源線圈20的數量進行大量設置，同時，網路範圍可以擴展至所述可變電容器控制裝置100需要控制的範圍。Therefore, the variable capacitor control device 100 of the embodiment of the present invention can be arranged in a large amount according to the number of the source coils 20, and at the same time, the network range can be extended to the range that the variable capacitor control device 100 needs to control.
另外，從控制器211、212確保通信線路用於將外部編碼器120和Z-掃描感測器檢測的檢測值傳送到主機電腦220。In addition, the slave controllers 211, 212 ensure that the communication line is used to transmit the detected values detected by the external encoder 120 and the Z-scan sensor to the host computer 220.
主機電腦220可以連接顯示器，該顯示器上結合有作為輸入輸出部230的觸控板。輸入輸出部230具備：輸入部，其用於輸入可變電容器140的動作最小值、預設值、動作設定值；作為輸出部的顯示器，輸出可變電容器140及步進電機110的動作相關的資訊。The host computer 220 can be connected to a display to which a touch panel as the input/output unit 230 is incorporated. The input/output unit 230 includes an input unit for inputting an operation minimum value, a preset value, and an operation setting value of the variable capacitor 140, and a display as an output unit for outputting the operation of the variable capacitor 140 and the stepping motor 110. News.
其中，動作設定值是為控制阻抗而由用戶設定的可變電容器140的電容量值；動作最小值(或是負向極限值，“-limit”)可以是該可變電容器140的最小電容量值。Wherein, the action set value is a capacitance value of the variable capacitor 140 set by the user for controlling the impedance; the action minimum value (or a negative limit value, "-limit") may be the minimum capacitance of the variable capacitor 140. value.
另外，設定最小值可以是由用戶設定的可變電容器140的最小電容量和最大電容量之間的值，而動作設定值可被設定為略大於最小電容量的值。如此設定最小值的原因是，一方面，如果使用可變電容器140的最小電容量值和最大電容量值範圍之間的所有的值，由於頻繁的動作會使可變電容器140的壽命變短；另一方面，所有可變電容器140都具有10%左右的誤差(Tolerance)，即所有的可變電容器140的最小電容量(capacitance)並非是“0pF(皮法)”，而是具有數~數十pF等不同的動作最小值，所以設置在多個源線圈20上的所有的可變電容器140的動作最小值都會不同。因此，先檢測這些可變電容器140的所有的動作最小值以後，再預設一個大於所有動作最小值的統一的值作為預設值，以使用為操作可變電容器140的動作基準。In addition, the set minimum value may be a value between the minimum capacitance and the maximum capacitance of the variable capacitor 140 set by the user, and the action setting value may be set to a value slightly larger than the minimum capacitance. The reason for setting the minimum value in this way is that, on the one hand, if all values between the minimum capacitance value and the maximum capacitance value range of the variable capacitor 140 are used, the life of the variable capacitor 140 is shortened due to frequent actions; On the other hand, all of the variable capacitors 140 have a tolerance of about 10%, that is, the minimum capacitance of all the variable capacitors 140 is not "0pF (pseudo)", but has a number to several Since the minimum operation value is ten pF or the like, the minimum operation values of all the variable capacitors 140 provided on the plurality of source coils 20 are different. Therefore, after detecting all the minimum values of the operation of these variable capacitors 140, a uniform value greater than the minimum value of all the actions is preset as a preset value to use the action reference for operating the variable capacitor 140.
圖6是本發明實施例的用於控制電感耦合電漿處理裝置的從控制器的方框圖。如圖6所示，從控制器211具有通過設備網200連接至主機電腦的中央處理器(CPU)211a。本發明實施例的中央處理器211a可具備ARM(Advance RISC Machines)處理器。Figure 6 is a block diagram of a slave controller for controlling an inductively coupled plasma processing apparatus in accordance with an embodiment of the present invention. As shown in FIG. 6, the slave controller 211 has a central processing unit (CPU) 211a connected to the host computer through the device network 200. The central processing unit 211a of the embodiment of the present invention may be provided with an ARM (Advance RISC Machines) processor.
從控制器211生成驅動步進電機110的脈衝，還具備：FPGA(現場可程式設計閘陣列)211b，其與發送和接收外部編碼器120、Z-掃描感測器、步進電機110的資訊的輸入輸 出部230連接；記憶體211c，其儲存可變電容器的規格資料、各種設定資訊、外部編碼器120的檢測值等資料。A pulse for driving the stepping motor 110 is generated from the controller 211, and further includes: an FPGA (Field Programmable Gate Array) 211b, and information for transmitting and receiving the external encoder 120, the Z-scan sensor, and the stepping motor 110. Input and loss The output unit 230 is connected to the memory 211c, which stores specifications of the variable capacitor, various setting information, and detection values of the external encoder 120.
記憶體211c可以是在電源斷開的狀態下也能夠儲存資訊的EPROM(可擦可程式設計唯讀記憶體)模式的記憶體。儲存在該記憶體211c內的可變電容器140的規格資訊為動作最小值、預設值、恢復設定值、動作設定值。其中，恢復設定值是略大於設定最小值的電容量值。The memory 211c may be a memory of an EPROM (Erasable Programmable Read Only Memory) mode capable of storing information even when the power is off. The specification information of the variable capacitor 140 stored in the memory 211c is an operation minimum value, a preset value, a recovery setting value, and an operation setting value. Wherein, the recovery set value is a capacitance value slightly larger than the set minimum value.
以下說明如前述構成的本發明實施例的電感耦合型電漿處理裝置的控制方法。Next, a control method of the inductively coupled plasma processing apparatus according to the embodiment of the present invention configured as described above will be described.
基板被搬運至腔室10內部，安裝在靜電卡盤上13。然後，向腔室10內部供應工藝氣體，而且腔室10內部通過排氣設備維持在預設的壓力。隨後，打開高頻電源以規定RF功率輸出用於生成電漿的高頻，該RF功率被提供至源線圈20。由此，源線圈20的磁力線穿過電介質窗15後橫跨腔室10內部處理空間，形成感應電場。The substrate is carried inside the chamber 10 and mounted on the electrostatic chuck 13. Then, the process gas is supplied to the inside of the chamber 10, and the inside of the chamber 10 is maintained at a preset pressure by the exhaust device. Subsequently, the high frequency power source is turned on to specify the RF power output for generating a high frequency of the plasma, which is supplied to the source coil 20. Thereby, the magnetic lines of force of the source coil 20 pass through the dielectric window 15 and traverse the processing space inside the chamber 10 to form an induced electric field.
由於該感應電場，工藝氣體分解為分子或原子並相互碰撞而生成電漿。該電漿以原子團或離子的形態在工藝空間內部擴散。此時，原子團等方性地射入基板上，而離子由於直流偏壓的作用，向基板移動，從而對基板進行蝕刻等的處理。Due to the induced electric field, the process gas decomposes into molecules or atoms and collides with each other to form a plasma. The plasma diffuses inside the process space in the form of radicals or ions. At this time, the atomic group is incident on the substrate in an isotropic manner, and the ions move toward the substrate by the action of the DC bias, thereby performing etching or the like on the substrate.
另一方面，為了進行有效的所述電漿處理工藝，電漿密度需要均勻。為了形成密度均勻的電漿，需要調節源線圈20的阻抗。因此，需要利用設置在每個源線圈20上的可變電容器控制裝置100來調節每個源線圈20的阻抗。On the other hand, in order to carry out the effective plasma treatment process, the plasma density needs to be uniform. In order to form a plasma of uniform density, it is necessary to adjust the impedance of the source coil 20. Therefore, it is necessary to adjust the impedance of each source coil 20 with the variable capacitor control device 100 provided on each source coil 20.
例如，如圖2所述，9個區域A1~A9上分散設置有源線圈20，此時，即便設置在所有區域的源線圈20上流過相同的高頻電流，也不能確保電漿密度或基板處理的均勻性。For example, as shown in FIG. 2, the active coils 20 are dispersedly disposed in the nine regions A1 to A9. At this time, even if the same high-frequency current flows through the source coils 20 provided in all the regions, the plasma density or the substrate cannot be ensured. Uniformity of processing.
即根據工藝環境，需要對設置在9個區域A1~A9上的每個源線圈20固有的阻抗調節。因此，為了確保各個區域A1~A9上的相應的阻抗，需要利用可變電容器控制裝置100來調節每個源線圈20的阻抗。That is, depending on the process environment, it is necessary to adjust the impedance inherent to each of the source coils 20 provided in the nine areas A1 to A9. Therefore, in order to secure the respective impedances in the respective areas A1 to A9, it is necessary to adjust the impedance of each of the source coils 20 by the variable capacitor control device 100.
另一方面，本發明實施例的可變電容器140的操作動作通過步進電機進行。但是由於不可預測的原因，步進電機110有發生失步(step out)的情況。如果步進電機110發生失步，即使為了可變電容器140的動作而向步進電機110輸入規定的動作設定值，步進電機110實際上也不按照輸入的動作設定值動作。這種情況下，由於無法控制阻抗，因此無法調節需要的電漿的均勻度，繼而無法實現有效的基板處理。On the other hand, the operation of the variable capacitor 140 of the embodiment of the present invention is performed by a stepping motor. However, the stepping motor 110 has a step out due to unpredictable reasons. When the stepping motor 110 is out of synchronization, even if a predetermined operation setting value is input to the stepping motor 110 for the operation of the variable capacitor 140, the stepping motor 110 does not actually operate in accordance with the input operation setting value. In this case, since the impedance cannot be controlled, the uniformity of the required plasma cannot be adjusted, and then efficient substrate processing cannot be achieved.
為瞭解決這些問題，為步進電機110的動作而輸入的值以脈衝值表示，步進電機110的實際動作由外部編碼器120檢測後以脈衝值表示實際輸出值。然後比較為步進電機110的動作而輸入的脈衝形態的電機驅動值和由外部編碼器120檢測後輸出的脈衝形態的檢測值，如果顯示兩個值不等同或者在設定的範圍內不相同時，可以判斷為發生了失步。In order to solve these problems, the value input for the operation of the stepping motor 110 is represented by a pulse value, and the actual operation of the stepping motor 110 is detected by the external encoder 120, and the actual output value is represented by a pulse value. Then, the motor drive value of the pulse form input for the operation of the stepping motor 110 and the detected value of the pulse form outputted by the external encoder 120 are compared, and if the two values are not identical or are different within the set range, It can be judged that a loss of step has occurred.
圖7是本發明實施例用於說明電感耦合電漿處理裝置的控制方法的圖。如圖7所示，主機電腦220通過設備網200以資料包的形式向每個從控制器211傳輸可變電容器的動作設定值(S10)。該動作設定值是為了每個可變電容器140的 動作而設定的值，也是為每個源線圈20所需的阻抗而設定的電容量。Fig. 7 is a view for explaining a control method of an inductively coupled plasma processing apparatus according to an embodiment of the present invention. As shown in FIG. 7, the host computer 220 transmits the action setting value of the variable capacitor to each slave controller 211 in the form of a packet through the device network 200 (S10). The action set value is for each variable capacitor 140 The value set by the operation is also the capacitance set for the impedance required for each source coil 20.
從控制器211從主機電腦220接收動作設定值後，生成與該動作設定值匹配的用於旋轉步進電機110的步進電機驅動用脈衝，並傳送至步進電機(S11)。接收該脈衝的對應的步進電機110進行旋轉，從而驅動對應的可變電容器140。When the controller 211 receives the operation setting value from the host computer 220, the stepping motor driving pulse for rotating the stepping motor 110 matching the operation setting value is generated and transmitted to the stepping motor (S11). The corresponding stepping motor 110 that receives the pulse rotates to drive the corresponding variable capacitor 140.
另外，在步進電機110旋轉期間，外部編碼器120檢測步進電機110的旋轉，將該檢測結果發送至從控制器211。然後，從控制器211比較為驅動步進電機110而提供的步進電機驅動用的脈衝值和由外部編碼器120檢測的旋轉脈衝值，以判斷失步與否，即判斷步進電機110是否正常動作(S13)。根據該結果判斷是否發生失步。而不管是否發生失步，從控制器211通過設備網向主機電腦220報告步進電機動作的異常與否(S14)。In addition, during rotation of the stepping motor 110, the external encoder 120 detects the rotation of the stepping motor 110, and transmits the detection result to the slave controller 211. Then, the slave controller 211 compares the pulse value for driving the stepping motor provided to drive the stepping motor 110 with the value of the rotation pulse detected by the external encoder 120 to determine whether the stepping motor 110 is out of step or not, that is, whether the stepping motor 110 is judged whether Normal action (S13). Based on the result, it is judged whether or not the out of step occurs. Regardless of whether or not the out-of-synchronization occurs, the controller 211 reports the abnormality of the stepping motor operation to the host computer 220 through the device network (S14).
當判斷為步進電機110發生異常，即判斷為電機發生失步時，主機電腦220將自動或手動開始起始序列(Home sequence)動作，並向從控制器211發出起始序列動作命令(S15)。從控制器211接收起始序列動作命令後執行起始序列動作(S16)。When it is determined that the stepping motor 110 is abnormal, that is, it is determined that the motor is out of synchronization, the host computer 220 will automatically or manually start the home sequence action and issue a start sequence action command to the slave controller 211 (S15). ). The start sequence action is executed after receiving the start sequence action command from the controller 211 (S16).
起始序列動作調節步進電機110的動作速度以使可變電容器140維持穩定狀態，繼而使得可變電容器140以動作設定值迅速動作。因此，起始序列動作先以恢復設定值快速旋轉步進電機110。如果此時發生失步，將反復傳達命令使步進電機110進行動作，以便找到恢復設定值。The initial sequence action adjusts the speed of operation of the stepper motor 110 to maintain the variable capacitor 140 in a steady state, which in turn causes the variable capacitor 140 to act quickly at the set action value. Therefore, the initial sequence action first rapidly rotates the stepper motor 110 with the restored set value. If an out-of-synchronization occurs at this time, the command is repeatedly transmitted to cause the stepping motor 110 to operate to find the recovery set value.
達到恢復設定值以後慢速驅動步進電機110，使可變電容器140處於動作最小值，繼續以設定最小值慢速驅動步進電機110，最後快速驅動步進電機110使其達到動作設定值，如此，可以在不發生可變電容器140的動作超載的情況下平穩地設定成動作設定值。外部編碼器120持續檢測動作過程中是否發生失步，並將檢測值傳送至從控制器211，從控制器211將其結果傳送至主機電腦220。因此，由輸入輸出部230即時顯示其結果，能夠顯示可變電容器140的動作有無異常，並能迅速地對動作異常進行控制。After the recovery set value is reached, the stepping motor 110 is driven at a slow speed to make the variable capacitor 140 at the minimum value of the operation, continue to drive the stepping motor 110 at a set minimum value, and finally drive the stepping motor 110 to the action setting value. In this way, the operation set value can be smoothly set without causing the operation of the variable capacitor 140 to be overloaded. The external encoder 120 continuously detects whether or not an out-of-step occurs during the action, and transmits the detected value to the slave controller 211, and the slave controller 211 transmits the result to the host computer 220. Therefore, the result is immediately displayed by the input/output unit 230, and it is possible to display whether or not the operation of the variable capacitor 140 is abnormal, and it is possible to quickly control the operation abnormality.
如上所述，本發明的實施例，並不應該解釋為用於限定本發明的技術思想。本發明的保護範圍僅以權利要求書的記載為准，對於本發明所屬技術領域的普通技術人員來說，可以將本發明的技術思想進行各種形式的改進變更。因此，這些改進和變更對於本發明所屬技術領域的普通技術人員來說是顯而易見的，屬於本發明的保護範圍內。As described above, the embodiments of the present invention should not be construed as limiting the technical idea of the present invention. The scope of the present invention is intended to be limited only by the scope of the appended claims. Accordingly, such modifications and alterations will be apparent to those skilled in the art of the invention.
A1‧‧‧分割區域A1‧‧‧ segmented area
16a‧‧‧隔壁16a‧‧‧ next door
21、22、23、24‧‧‧源線圈21, 22, 23, 24‧‧‧ source coil
100‧‧‧可變電容器控制裝置100‧‧‧Variable Capacitor Control
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020072136A1 (en) * | 1999-09-27 | 2002-06-13 | Masatoshi Kanamaru | Method for manufacturing semiconductor device utilizing semiconductor testing equipment |
| TW200302683A (en) * | 2002-01-30 | 2003-08-01 | Alps Electric Co Ltd | Plasma processing apparatus and method |
| US20040014325A1 (en) * | 2000-05-19 | 2004-01-22 | Franz Laermer | Plasma etching equipment |
| KR20100053253A (en) * | 2008-11-12 | 2010-05-20 | 세메스 주식회사 | Inductively coupled plasma antenna |
| TW201026166A (en) * | 2008-10-27 | 2010-07-01 | Tokyo Electron Ltd | Inductively coupled plasma processing apparatus, plasma processing method, and storage medium |
| TW201143546A (en) * | 2009-10-27 | 2011-12-01 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100462584B1 (en) * | 2001-07-06 | 2004-12-17 | 주성엔지니어링(주) | Plasma processing apparatus |
| TW200300650A (en) * | 2001-11-27 | 2003-06-01 | Alps Electric Co Ltd | Plasma processing apparatus |
| JP2005204402A (en) * | 2004-01-15 | 2005-07-28 | Pearl Kogyo Co Ltd | Motor controller and semiconductor plasma processor using it |
| JP4350766B2 (en) * | 2007-03-30 | 2009-10-21 | 東京エレクトロン株式会社 | Plasma processing equipment, high frequency power supply calibration method, high frequency power supply |
| JP2008300322A (en) * | 2007-06-04 | 2008-12-11 | Canon Anelva Corp | Plasma processing device, plasma processing method, matcher, and method of operating matcher |
| JP5094289B2 (en) * | 2007-09-05 | 2012-12-12 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP4905304B2 (en) * | 2007-09-10 | 2012-03-28 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and storage medium |
| CN201174575Y (en) * | 2008-03-03 | 2008-12-31 | 广东中玉科技有限公司 | Automatic blowout coil set apparatus |
| US8144438B2 (en) * | 2008-10-03 | 2012-03-27 | General Electric Company | Motor control center communication system |
| US8502455B2 (en) * | 2009-05-29 | 2013-08-06 | Agilent Technologies, Inc. | Atmospheric inductively coupled plasma generator |
| JP5632626B2 (en) * | 2010-03-04 | 2014-11-26 | 東京エレクトロン株式会社 | Automatic alignment apparatus and plasma processing apparatus |
| JP5711953B2 (en) * | 2010-12-13 | 2015-05-07 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| KR20120077509A (en) * | 2010-12-30 | 2012-07-10 | 세메스 주식회사 | Adjustable capacitor, plasma impedance matching system and the methode |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020072136A1 (en) * | 1999-09-27 | 2002-06-13 | Masatoshi Kanamaru | Method for manufacturing semiconductor device utilizing semiconductor testing equipment |
| US20040014325A1 (en) * | 2000-05-19 | 2004-01-22 | Franz Laermer | Plasma etching equipment |
| TW200302683A (en) * | 2002-01-30 | 2003-08-01 | Alps Electric Co Ltd | Plasma processing apparatus and method |
| TW201026166A (en) * | 2008-10-27 | 2010-07-01 | Tokyo Electron Ltd | Inductively coupled plasma processing apparatus, plasma processing method, and storage medium |
| KR20100053253A (en) * | 2008-11-12 | 2010-05-20 | 세메스 주식회사 | Inductively coupled plasma antenna |
| TW201143546A (en) * | 2009-10-27 | 2011-12-01 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
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