JP5422652B2 - フラッシュメモリ記憶装置における動的メモリ割当てに起因する自己エビクションの回避 - Google Patents

フラッシュメモリ記憶装置における動的メモリ割当てに起因する自己エビクションの回避 Download PDF

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JP5422652B2
JP5422652B2 JP2011520178A JP2011520178A JP5422652B2 JP 5422652 B2 JP5422652 B2 JP 5422652B2 JP 2011520178 A JP2011520178 A JP 2011520178A JP 2011520178 A JP2011520178 A JP 2011520178A JP 5422652 B2 JP5422652 B2 JP 5422652B2
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overlay
memory
allocation
indication
ram memory
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JP2011529225A (ja
JP2011529225A5 (https=
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ストラック，ワディム
スタージョン，デリル
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サンディスク テクノロジィース インコーポレイテッド
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/12—Replacement control
    • G06F12/121—Replacement control using replacement algorithms
    • G06F12/126—Replacement control using replacement algorithms with special data handling, e.g. priority of data or instructions, handling errors or pinning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System (AREA)
  • Stored Programmes (AREA)
JP2011520178A 2008-07-22 2009-07-22 フラッシュメモリ記憶装置における動的メモリ割当てに起因する自己エビクションの回避 Expired - Fee Related JP5422652B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/177,863 US8171206B2 (en) 2008-07-22 2008-07-22 Avoidance of self eviction caused by dynamic memory allocation in a flash memory storage device
US12/177,863 2008-07-22
PCT/US2009/051445 WO2010011780A1 (en) 2008-07-22 2009-07-22 Avoidance of self eviction caused by dynamic memory allocation in a flash memory storage device

Publications (3)

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JP2011529225A JP2011529225A (ja) 2011-12-01
JP2011529225A5 JP2011529225A5 (https=) 2012-08-30
JP5422652B2 true JP5422652B2 (ja) 2014-02-19

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JP2011520178A Expired - Fee Related JP5422652B2 (ja) 2008-07-22 2009-07-22 フラッシュメモリ記憶装置における動的メモリ割当てに起因する自己エビクションの回避

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US (1) US8171206B2 (https=)
EP (1) EP2307964B1 (https=)
JP (1) JP5422652B2 (https=)
KR (1) KR101636892B1 (https=)
CN (1) CN102160039A (https=)
WO (1) WO2010011780A1 (https=)

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US7962684B2 (en) 2008-02-14 2011-06-14 Sandisk Corporation Overlay management in a flash memory storage device
US8171206B2 (en) 2008-07-22 2012-05-01 Sandisk Technologies Inc. Avoidance of self eviction caused by dynamic memory allocation in a flash memory storage device
DE102014203062A1 (de) * 2014-02-20 2015-08-20 Bayerische Motoren Werke Aktiengesellschaft Vergrößern des verfügbaren FLASH-Speichers eines Micro-Controllers
US10083135B2 (en) 2015-08-28 2018-09-25 Macronix International Co., Ltd. Cooperative overlay
DE102016218280B4 (de) 2016-09-22 2018-07-19 Infineon Technologies Ag Vorrichtung, die einen Überlagerungsmechanismus umfasst, System mit Vorrichtungen, die jeweils einen Überlagerungsmechanismus mit einer individuellen programmierbaren Verzögerung umfassen
US10558576B2 (en) * 2018-01-22 2020-02-11 Western Digital Technologies, Inc. Storage device with rapid overlay access
US12393340B2 (en) * 2019-01-16 2025-08-19 Pure Storage, Inc. Latency reduction of flash-based devices using programming interrupts
KR102730664B1 (ko) 2019-04-01 2024-11-15 에스케이하이닉스 주식회사 메모리 시스템, 메모리 컨트롤러 및 그 동작 방법
US10852979B1 (en) * 2019-06-19 2020-12-01 Dell Products L.P. System and method of utilizing a non-volatile solid state storage device
KR20210012123A (ko) 2019-07-24 2021-02-03 에스케이하이닉스 주식회사 메모리 시스템, 메모리 컨트롤러 및 동작 방법
KR102806884B1 (ko) 2019-08-22 2025-05-14 에스케이하이닉스 주식회사 런타임 오버레이를 통해 펌웨어를 관리하는 장치 및 방법
KR20230016110A (ko) 2021-07-23 2023-02-01 삼성전자주식회사 메모리 모듈, 이를 포함하는 시스템, 및 메모리 모듈의 동작 방법
US11809750B1 (en) 2022-04-26 2023-11-07 Western Digital Technologies, Inc. Automated overlay regrouping
KR20250089762A (ko) * 2023-12-12 2025-06-19 에스케이하이닉스 주식회사 컨트롤러 및 스토리지 장치

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JPS5734251A (en) * 1980-08-07 1982-02-24 Toshiba Corp Address conversion and generating system
JPS60101641A (ja) * 1983-11-07 1985-06-05 Usac Electronics Ind Co Ltd オ−バレイ・モジユ−ルの管理方式
JP2551075B2 (ja) * 1988-01-20 1996-11-06 日本電気株式会社 オーバレイ構造プログラム実行方式
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US5588129A (en) 1994-02-09 1996-12-24 Ballard; Clinton L. Cache for optical storage device and method for implementing same
US7062761B2 (en) 2001-07-10 2006-06-13 Micron Technology, Inc. Dynamic arrays and overlays with bounds policies
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US7437516B2 (en) 2004-12-28 2008-10-14 Sap Ag Programming models for eviction policies
US7478218B2 (en) 2005-02-18 2009-01-13 Vmware, Inc. Adaptive cache sizing based on monitoring of regenerated and replaced cache entries
KR101014179B1 (ko) * 2005-09-14 2011-02-14 디스크레틱스 테크놀로지스 엘티디. 플래시 대용량 저장 메모리를 가진 보안 장치를 위한 보안 및 적응형 시스템 구조
US7934049B2 (en) 2005-09-14 2011-04-26 Sandisk Corporation Methods used in a secure yet flexible system architecture for secure devices with flash mass storage memory
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US7962684B2 (en) 2008-02-14 2011-06-14 Sandisk Corporation Overlay management in a flash memory storage device
US8171206B2 (en) 2008-07-22 2012-05-01 Sandisk Technologies Inc. Avoidance of self eviction caused by dynamic memory allocation in a flash memory storage device

Also Published As

Publication number Publication date
JP2011529225A (ja) 2011-12-01
KR101636892B1 (ko) 2016-07-06
CN102160039A (zh) 2011-08-17
EP2307964A1 (en) 2011-04-13
EP2307964B1 (en) 2014-01-15
US8171206B2 (en) 2012-05-01
KR20110050457A (ko) 2011-05-13
WO2010011780A1 (en) 2010-01-28
US20100023673A1 (en) 2010-01-28

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