JP5415713B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5415713B2
JP5415713B2 JP2008136061A JP2008136061A JP5415713B2 JP 5415713 B2 JP5415713 B2 JP 5415713B2 JP 2008136061 A JP2008136061 A JP 2008136061A JP 2008136061 A JP2008136061 A JP 2008136061A JP 5415713 B2 JP5415713 B2 JP 5415713B2
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JP
Japan
Prior art keywords
insulator
integrated circuit
layer
semiconductor
semiconductor integrated
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JP2008136061A
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Japanese (ja)
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JP2009283793A (ja
JP2009283793A5 (enExample
Inventor
舜平 山崎
欣聡 及川
博信 小路
豊 塩野入
清 加藤
昌孝 中田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008136061A priority Critical patent/JP5415713B2/ja
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Publication of JP2009283793A5 publication Critical patent/JP2009283793A5/ja
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  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2008136061A 2008-05-23 2008-05-23 半導体装置 Expired - Fee Related JP5415713B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008136061A JP5415713B2 (ja) 2008-05-23 2008-05-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008136061A JP5415713B2 (ja) 2008-05-23 2008-05-23 半導体装置

Publications (3)

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JP2009283793A JP2009283793A (ja) 2009-12-03
JP2009283793A5 JP2009283793A5 (enExample) 2011-07-14
JP5415713B2 true JP5415713B2 (ja) 2014-02-12

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Family Applications (1)

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JP2008136061A Expired - Fee Related JP5415713B2 (ja) 2008-05-23 2008-05-23 半導体装置

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JP (1) JP5415713B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9887568B2 (en) * 2010-02-12 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Moving object, wireless power feeding system, and wireless power feeding method
KR101767037B1 (ko) * 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
TWI539597B (zh) * 2011-01-26 2016-06-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628283A (ja) * 1985-07-04 1987-01-16 Matsushita Electric Ind Co Ltd 情報カ−ド
JPS63154397A (ja) * 1986-12-19 1988-06-27 昭和電工株式会社 Ｉｃカ−ド
JP4541246B2 (ja) * 2004-12-24 2010-09-08 トッパン・フォームズ株式会社 非接触ｉｃモジュール
JP2007241999A (ja) * 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP5469799B2 (ja) * 2006-03-15 2014-04-16 株式会社半導体エネルギー研究所 無線通信によりデータの交信を行う半導体装置
JP5296360B2 (ja) * 2006-10-04 2013-09-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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JP2009283793A (ja) 2009-12-03

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