JP5401763B2 - Coating liquid coating method and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a coating liquid coating method and a semiconductor device manufacturing method, and in particular, coating of a coating liquid for coating a coating liquid such as a resist, SOG, or polyimide on a substrate such as a semiconductor substrate, a photomask, or an LCD substrate. The present invention relates to a method and a semiconductor device manufacturing method including a step of applying a resist on a film to be patterned.

  For example, a process for forming a semiconductor device on a semiconductor substrate such as silicon or gallium arsenide includes a plurality of steps of patterning a film such as an insulating film, a semiconductor film, or a metal film on the substrate.

  Such film patterning is performed by forming a resist pattern on the film and then etching the film in a region not covered with the resist.

  The resist is applied onto the substrate on which the film is formed, and then patterned through processes such as baking, exposure, and development.

  The resist is applied by a method in which a resist solution is dropped on the substrate and then spread over the entire surface of the substrate by the centrifugal force and wettability of the rotation of the substrate. However, the amount of resist scattered outside the substrate increases.

  In order to reduce the amount of resist consumed by the spin coating method, for example, Japanese Patent Application Laid-Open No. 9-129549 (Patent Document 1) discloses that the resist dropped on the substrate covers the entire substrate, that is, during the substrate rotation time. It is described that the substrate rotation speed is increased and decreased.

  Patent Document 1 describes that according to this method, the formation of a flow (whisker) of a resist solution extending to the periphery of the substrate can be suppressed.

JP-A-9-129549

  By the way, in the resist coating method by rotating the substrate, it is also necessary to apply the resist uniformly over the entire surface of the substrate.

  That is, the resist is applied to the substrate and then patterned by exposure and development. In order to increase the pattern accuracy, the in-plane distribution of the resist film thickness is required to be uniform.

  The present inventors have reduced the consumption of a coating liquid such as a resist and applied a coating liquid on the substrate with a uniform thickness, and the coating liquid coating method capable of reducing the consumption of the coating liquid and the coating liquid The manufacturing method of the semiconductor device including the application | coating process of the coating liquid which can apply | coat the film thickness uniformly is proposed.

The coating liquid coating method includes a step of supplying a coating liquid onto the substrate while rotating the substrate at a first rotational speed having a vertical change in rotational speed in a first time, and the first rotational speed. The substrate is rotated at a second rotation speed of 0 rpm slower than the first rotation speed after the coating liquid supply is stopped, and the substrate is moved at the second rotation speed. And a step of rotating the substrate at a third rotational speed that is slower than the first rotational speed and faster than the second rotational speed after stopping, and the lower limit of the first rotational speed is fourth The upper limit of the first rotational speed is the fifth rotational speed, and the value obtained by subtracting the fourth rotational speed from the fifth rotational speed is divided by the fifth rotational speed. The value obtained is 0. l or more and 0.3 or less, wherein the first rotational speed is increased and variation rate of repeating the lowering of the rotational speed to so that to change uniformly in each of the divided time within a first time .

  According to the present invention, when the coating liquid is spin-coated on the substrate, the change in the rotation speed of the substrate is changed up to the end of the entire surface of the substrate, that is, until the end of the rotation. It becomes possible to make it uniform.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a side sectional view showing a configuration of a coating apparatus used in a coating liquid coating method according to an embodiment of the present invention. In the present embodiment, a resist will be described as an example of the coating liquid applied by the coating apparatus.

  In FIG. 1, a motor 3 is attached to the center of the bottom plate 2 of the coating unit 1 so as to be movable up and down. An elevator 4 attached to the bottom plate 2 is connected to the outer periphery of the motor 3. The elevator 4 is driven and controlled by the controller 11 so as to raise or lower the motor 3.

  The rotation axis of the spin chuck 5 is fixed to the upper end of the rotation axis of the motor 3, and the rotation speed of the spin chuck 5 is controlled by the control unit 11 that controls the rotation of the motor 3. An annular container 7 for collecting the coating solution is disposed around the spin chuck 5.

  An arm support column 14 whose height is adjusted by an elevating part 13 is attached to the bottom plate 2 in the region outside the annular container 7, and a rail 15 having an arm moving part 16 is attached to the upper end thereof.

  A scan arm 17 that is controlled to move in a direction orthogonal to the rail 15 is attached to the arm moving unit 16. Further, the moving position of the arm moving unit 16 on the rail 15 and the moving position of the scan arm 17 moved by the arm moving unit 16 are respectively controlled by the control unit 11.

  A nozzle holder 20 that holds the resist nozzle 21 and the solvent nozzle 22 above the spin chuck 5 is attached to the tip of the scan arm 17.

  A resist supply pipe 21 a is connected to the upper end of the resist nozzle 21, and a solvent supply pipe 22 a is connected to the upper end of the solvent nozzle 22.

  A resist supply unit 23 for supplying a resist solution to the resist nozzle 21 is connected to the resist supply tube 21a, and a solvent supply unit 24 for supplying a solvent such as thinner to the solvent nozzle 22a is connected to the solvent supply tube 22a. Has been.

  The control unit 11 controls the resist supply amount from the resist supply unit 23, that is, the resist dropping amount from the resist nozzle 21, and the solvent supply amount from the solvent supply unit 24, that is, the solvent dropping amount from the solvent nozzle 22, respectively. .

  Next, the rotation of the substrate, the supply of the solvent, and the control of the supply of the resist according to the present embodiment will be described with examples.

  In order to supply the solvent to the substrate 10 and further apply the resist, the following control is performed according to the timing chart shown in FIG. A bare silicon substrate is used as the substrate 10.

  First, the control unit 11 stops the motor 3 and the spin chuck 5. In this state, the amount of solvent supplied to the solvent supply pipe 22 a is controlled by the solvent supply unit 24, and the solvent, for example, thinner is discharged from the solvent nozzle 22 to the center of the substrate 10.

Thereafter, by rotating the motor 3 by the control unit 11 rotates the substrate 10 at time T ₁ at the first rotation speed R ₁₂ to R ₁₁ with the change in the rotational speed.

The rotational speed of the substrate 10 at time T _1, higher rotation time T ₁ is divided into n (n is a number) interval, the rotational speed to a maximum value R ₁₂ of the predetermined range in the period of the division number n is an even number either controlled it to a lower rotational speed R _11, n is the be controlled to the rotation speed R _11, R ₁₂ and vice versa in the case of an odd number, that changes the first rotation speed R ₁₂ to R ₁₁ .

The rotation period T is T = 2T ₁ / n. The amplitude ΔR of the change in rotational speed is ΔR = (R ₁₂ −R ₁₁ ), and the ratio (variation rate) γ of the rotational speed fluctuation width ΔR to the maximum rotational speed value R ₁₂ is expressed by the following equation. .
γ (%) = ((R ₁₂ −R ₁₁ ) / R ₁₂ ) × 100

Further, up to the end from the beginning of the rotation time T ₁ of the substrate 10, to discharge the resist in the center of the substrate 10 from the resist nozzle 21. The supply amount is controlled by a resist supply unit 23 connected to the resist supply pipe 21a.

When the rotation time T1 has elapsed, by controlling the motor 3 by the control unit 11 decelerates the rotation of the substrate 10 to the second rotation speed R _2. Second rotational speed R ₂ is lower than the first rotation speed R ₁₂ to R _11.

Subsequently, when time T ₂ has elapsed from the start of deceleration of the substrate 10 to the second rotation speed R ₂ , the rotation of the substrate 10 is further increased to accelerate to the _third rotation speed R ₃ , and thereafter The rotational speed R ₃ is held at time T ₃ .

Third rotational speed R ₃ of, slower than the first rotation speed R ₁₂ to R _11, and sets faster than the second rotation speed R _2.

After the elapse of time T ₃ , the rotational speed of the substrate 10 may be further controlled as necessary, whereby the application of the resist on the substrate 10 is completed.

As described above, the number of divisions n with respect to the time T ₁ for rotating the substrate 10 at the first rotation speeds R _{12 to} R ₁₁ and the fluctuation rate γ of the rotation speed at the rotation time T ₁ are set as shown in Table 1 below. Then, a resist was applied, and five types of resist application tests 1 to 5 were performed on this embodiment.

In Test 1 to Test 5 in Table 1, the time T _{1 of} the first rotation speeds R _{12 to} R ₁₁ , that is, the resist discharge time was 1 second. In test 1, the division number (step) n is n = 10, in test 2, the division number (step) n is n = 5, and in test 3, test 4, the division number (step) n is n = 10. In Test 5, the number of divisions (step) n was set to n = 5.

  In Test 1 and Test 2, the ratio γ of the rotational speed variation is γ = 10%, in Test 3, the ratio γ is γ = 20%, and in Test 4 and Test 5, the ratio γ is γ = 30%. did.

Further, in Test 1 Test 5, the total time _{T 1} of the first rotation speed _R 11 _{to R 12} 1.0 seconds, the maximum rotation speed _{R 12} of the first rotation speed _R 11 _{to R 12} and 3000rpm In addition, the second rotation speed R ₂ was set at 100 rpm, the time T ₂ was set at 1.0 second, the third rotation speed R ₃ was set at 1650 rpm, and the time T ₃ was set at 15 seconds.

As an example, the timing chart of Test 2 is shown in Table 2.

  In Table 2, thinner is supplied as a solvent to the stopped substrate 10 in Step 1. The substrate 10 may be rotated at a low speed after the thinner is supplied.

In step 3 of Table 2, the division number n of the first rotation speeds R _{12 to} R ₁₁ with respect to the rotation time T _{1 is set} to n = 5. In the first 0.2 seconds, the rotation speed of the substrate 10 is set to 3000 rpm. In 0.2 seconds, the rotation speed is 2700 rpm, and the rotation speed is changed to 3000 rpm, 2700 rpm, and 3000 rpm every 0.2 seconds.

In step 3, and supplies the resist to a substrate 10 that is rotating at a first rotational speed R ₁₂ to R _11. In step 4 after the resist supply is stopped, the rotational speed of the substrate 10 is reduced to 100 rpm for 1.5 seconds, and then in step 5, the rotational speed of the substrate 10 is increased to rotate at 1650 rpm for 15 seconds. To do.

  The acceleration values in Table 2 are accelerations for obtaining the left rotation speed, and the acceleration values indicated by negative (−) are accelerations for decelerating the rotation of the substrate 10. Also called deceleration.

And when the ArF resist was apply | coated to the board | substrate 10 on the resist application conditions by Test 1-Test 5, the resist film thickness distribution as shown in the curve of Test 1-Test 5 of FIG. 3 was obtained. Note that the target film thickness of the resist was 250 nm, and the total amount of resist supplied in time T ₁ = 1 second was 1.0 ml.

  The film thickness distribution shown in FIG. 3 is based on data obtained by measuring 49 points including a center point at intervals of 4 mm along a straight line passing through the center of the substrate 10.

  When the standard deviation σ of the film thickness distribution of Test 1 to Test 5 and the difference between the maximum value and the minimum value of the film thickness (in other words, the film thickness difference) range were obtained, the results shown in FIG. 4 were obtained. It was.

  On the other hand, when a resist is applied by a timing chart as shown in FIG. 5 as a reference, a film thickness distribution as shown by a black diamond line shown in FIG. 3 is obtained, and a film thickness deviation as shown in FIG. A value σ and a film thickness range range were obtained.

As illustrated in the timing chart of Table 3, the resist coating conditions by the reference shown in FIG. 5 are set at a rotational speed R of 3000 rpm for 0.1 second before the substrate 10 is rotated at the _first rotational speed R1. after rotating the substrate 10 at _10, it is held in one second constant without variation first set 2500rpm this rotational speed R ₁ simultaneously resist supply start and to the substrate 10. The other conditions are the same as those in Test 1 to Test 5.

  As shown in FIG. 4, the intermediate values of the film thickness distributions of the resists according to Tests 1 to 5 and the reference are substantially the same.

  However, according to the coating method according to Test 1 to Test 5 according to the present embodiment, the uniformity of the film thickness distribution was better than that of the reference coating method.

  For example, in FIG. 3, regarding the flatness at the center of the substrate 10 and in the vicinity thereof, the film thickness distribution by the methods of Test 1 to Test 5 is better than the film thickness distribution by the reference. Also, according to FIG. 4, it can be seen that both of the standard deviation σ and the film thickness range range are significantly better in the tests 1 to 5 than the reference, and high flatness is ensured.

On the other hand, when the results of the film thickness distributions of Test 1 to Test 5 in the present embodiment are compared with each other, the standard deviation σ, the film thickness difference range, and the film thickness are almost the same, and the first rotation speed R ₁₁ is not changed. the time T ₁ of the to R ₁₂ at least 5-fold to 10 split, further even if the ratio of the rotational speed fluctuation width γ is varied in the range of 10% to 30%, thickness and flatness of the resist almost identical I understand that

  This is because, while supplying the resist onto the substrate 10, first, the rotational speed is rapidly decreased from the maximum value in the predetermined range to the minimum value, and then the change is repeated until the resist is applied to the entire surface of the substrate. Because. This is considered to be because the resist can be stirred in the circumferential direction of the substrate to the end, and the resist bias that tends to occur between the center and the periphery of the substrate can be suppressed.

By the way, since the flatness of the resist film thickness is hardly changed due to the difference in the conditions in Table 1, the fluctuation width ΔR of the rotation speed is changed to be nonuniform in the first rotation speeds R _{12 to} R ₁₁ . may be, also, it may not be equally divided in the time T _1.

In FIG. 2, after the substrate 10 is rotated at the first rotation speeds R _{11 to} R ₁₂ , the rotation speed is reduced to the second rotation speed R ₂ , but the substrate 10 may be stopped.

  The resist coating method as described above is applied to, for example, a semiconductor device manufacturing process, and such steps will be described with reference to FIGS.

  First, as shown in FIG. 6A, after a silicon oxide film / silicon nitride film laminated film 52 is formed on the surface of the silicon substrate 51 corresponding to the above-described substrate 10, the upper layer side silicon nitride film laminated film is formed. Then, thinner, which is a solvent, is supplied from the solvent nozzle 22, and then an ArF resist 53 having a viscosity of 2.2 mPa · s is applied from the resist nozzle 21 onto the silicon nitride film. The resist is applied, for example, under the conditions shown in Tables 1 and 2 above.

  In this case, even if the resist dropping amount by the resist nozzle 21 is less than 1.0 ml as described above, a uniform film thickness distribution can be obtained.

  Thereafter, as shown in FIG. 6B, the ArF resist 53 on the silicon substrate 51 is exposed using a light source having a wavelength of 193 nm, and further developed to form an opening 54 in the shallow trench region. Subsequently, as shown in FIG. 6C, the silicon oxide film / silicon nitride film laminated film 52 exposed from the opening 54 is etched to remove the ArF resist 53, and then the silicon oxide film / silicon nitride film laminated film 52 is removed. Using this as a mask, the silicon substrate 51 is etched by reactive ion etching to form a groove 55.

  Next, as shown in FIG. 6D, a silicon oxide film is buried in the groove 55 of the silicon substrate 51 to form a shallow trench isolation 56. Note that the upper silicon nitride film of the silicon oxide film / silicon nitride film stack film 52 is removed by, for example, phosphoric acid after the embedded silicon oxide film is removed by a chemical mechanical polishing method or the like.

  Next, as shown in FIG. 7A, n-type or p-type wells 57 are formed by ion-implanting either n-type or p-type impurities into the silicon substrate 51. Further, the surface of the silicon substrate 51 is thermally oxidized to form a gate insulating film 58.

  Subsequently, as illustrated in FIG. 7B, a polysilicon film 59 is formed on the gate insulating film 58. Then, a solvent is supplied onto the polysilicon film 59 by the method shown in Tables 1 and 2, and then an ArF resist 60 is applied. Further, the ArF resist 60 is exposed and developed to form a gate pattern as shown in FIG.

  Next, the polysilicon film 59 is etched using the patterned ArF resist 60 as a mask, and then the ArF resist 60 is removed. As a result, as shown in FIG. 7D, a gate electrode 59g composed of the polysilicon film 59 is formed on the well 57 via the gate insulating film 58.

  Thereafter, as shown in FIG. 8A, n-type or p-type impurity diffusion regions 61a and 61b serving as source / drain are formed on both sides of the gate electrode 59g in the silicon substrate 51. In the case of forming the impurity diffusion regions 61a and 61b, there are a plurality of impurity ion implantation steps, and the insulating sidewall 65 is formed on the side surface of the gate electrode 59g in the meantime. The insulating sidewall 65 is formed by forming an insulating film such as silicon dioxide on the silicon substrate 51 and then etching it back.

  Next, as shown in FIG. 8B, a silicon oxide film to be the first interlayer insulating film 62 is formed on the gate electrode 59g and the silicon substrate 51 by chemical vapor deposition (CVD). Subsequently, conductive plugs 63 connected to the impurity diffusion regions 61 a and 61 b are formed in the first interlayer insulating film 62.

  Next, after forming a tungsten conductive film 64 on the first-layer interlayer insulating film 62, a solvent is dropped on the tungsten conductive film 64, and then a KrF resist 65 is applied.

  Further, as shown in FIG. 8C, the KrF resist 65 is exposed and developed using a light source having a wavelength of 248 nm to form a wiring pattern. Further, as shown in FIG. 8D, the conductive film 64 is etched using the pattern of the KrF resist 65 as a mask, and the remaining conductive film 64 is used as the first wiring 64a. Thereafter, a silicon dioxide film is formed on the wiring 64a and the interlayer insulating film 62, and this is etched back to leave an insulating sidewall 66 around the first wiring 64a.

  Thereafter, an interlayer insulating film, wiring, and the like are further formed, and the formation of the semiconductor device is completed.

  By the way, in the above embodiment, the method of applying a resist to the substrate surface has been described. However, the above application method is also applied to the case of applying a resist on a photomask substrate, an LCD substrate, and other substrates. Also good. Further, the above-described coating method is not limited to the case of applying a resist on a substrate, but may be applied to the case of applying SOG (spin-on-glass), polyimide resin, or the like on a substrate.

Next, the features of the above embodiment will be added.
(Supplementary Note 1) A step of supplying a coating liquid onto the substrate while rotating the substrate at a first rotational speed having a vertical change in the rotational speed in a first time, and after supplying the coating liquid, the substrate And a step of reducing the rotational speed of the coating liquid from the first rotational speed.
(Supplementary Note 2) The first rotation speed is changed by repeatedly increasing and decreasing the rotation speed every time divided within the first time period. Application method.
(Additional remark 3) The said 1st rotation speed changes with the repetition of the maximum speed of the set speed range, and the minimum speed, The coating liquid coating method of Additional remark 1 or Additional remark 2 characterized by the above-mentioned.
(Supplementary note 4) The coating liquid coating method according to any one of supplementary notes 1 to 3, wherein the first rotation speed changes every time obtained by equally dividing the first time.
(Additional remark 5) After stopping supply of the said coating liquid to the said board | substrate, the rotation of the said board | substrate is decelerated to the 2nd rotational speed, The coating liquid in any one of additional remark 1 thru | or additional 4 characterized by the above-mentioned. Application method.
(Supplementary note 6) The coating liquid coating method according to any one of supplementary notes 1 to 4, wherein the supply of the coating solution to the substrate is stopped and then the rotation of the substrate is stopped.
(Supplementary note 7) The first rotational speed is changed by repeatedly increasing and decreasing the rotational speed every time divided equally in the first time. Application method of coating solution.
(Supplementary note 8) The supplementary note 1 is characterized in that the first rotation speed is changed by repeatedly increasing and decreasing the rotation speed every time divided in an unequal manner within the first time period. Application method of coating liquid.
(Supplementary note 9) The first rotation speed according to the supplementary note 1, wherein a fluctuation rate at which the rotation speed is repeatedly increased and decreased is uniformly changed every time divided within the first time period. Application method of coating solution.
(Supplementary Note 10) The supplementary note 1 is characterized in that the first rotational speed has a non-uniform change rate in which the rotational speed increases and decreases every time divided within the first time. Application method of coating liquid.
(Supplementary Note 11) A step of supplying a coating liquid onto the semiconductor substrate while rotating the semiconductor substrate at a first rotational speed having a vertical change in the rotational speed in a first time, and after supplying the coating liquid, And a step of reducing the rotational speed of the semiconductor substrate from the first rotational speed.
(Supplementary note 12) The semiconductor device according to Supplementary note 11, wherein the first rotation speed is changed by repeatedly increasing and decreasing the rotation speed every time divided within the first time period. Production method.
(Supplementary note 13) The method of manufacturing a semiconductor device according to supplementary note 11 or 12, wherein the first rotation speed is changed by repetition of a maximum speed and a minimum speed within a set speed range.
(Supplementary note 14) The method for manufacturing a semiconductor device according to any one of supplementary notes 11 to 13, wherein the first rotation speed changes at every time obtained by equally dividing the first time.
(Supplementary note 15) The semiconductor device according to any one of Supplementary notes 11 to 14, wherein after the supply of the coating liquid to the substrate is stopped, the rotation of the substrate is decelerated to a second rotational speed. Production method.
(Supplementary note 16) The semiconductor device manufacturing method according to any one of supplementary note 11 to supplementary note 14, wherein the rotation of the semiconductor substrate is stopped after the supply of the coating liquid to the semiconductor substrate is stopped.
(Supplementary note 17) The supplementary note 11 is characterized in that the first rotational speed is changed by repeatedly increasing and decreasing the rotational speed every time divided equally within the first time period. A method for manufacturing a semiconductor device.
(Supplementary note 18) The supplementary note 11 is characterized in that the first rotation speed is changed by repeatedly increasing and decreasing the rotation speed every time divided in an unequal manner within the first time period. Semiconductor device manufacturing method.
(Supplementary note 19) The supplementary note 11 is characterized in that the first rotational speed has a uniform change rate of repetition of increasing and decreasing rotational speed every time divided within the first time period. A method for manufacturing a semiconductor device.
(Supplementary note 20) The supplementary note 11 is characterized in that the first rotational speed has a non-uniform change rate in which the rotational speed increases and decreases every time divided within the first time. Semiconductor device manufacturing method.

FIG. 1 is a side view showing an example of a coating unit used in a coating liquid supply method according to an embodiment of the present invention. FIG. 2 is a time chart showing an example of the rotation speed and rotation time of the substrate in the coating liquid coating method according to the embodiment of the present invention. FIG. 3 is a graph showing the film thickness distribution of the resist formed under the conditions of the resist solution coating method of the first example according to the embodiment of the present invention. FIG. 4 is a chart showing the flatness of the resist applied by the respective application methods of the embodiment according to the present invention and the reference. FIG. 5 is a time chart showing an example of the rotation speed and rotation time of the substrate in the coating liquid coating method according to the reference. FIG. 6 is a cross-sectional view (No. 1) showing a step of forming a semiconductor device by the method of the embodiment of the present invention. FIG. 7 is a cross-sectional view (No. 2) showing the step of forming the semiconductor device by the method of the embodiment of the present invention. FIG. 8 is a cross-sectional view (No. 2) showing the step of forming the semiconductor device by the method of the embodiment of the present invention.

Explanation of symbols

1 coating unit,
3 motor,
5 Spin chuck,
10 substrates,
11 Control unit,
21 resist nozzle,
22 solvent nozzle,
23 resist supply section,
24 solvent supply section,
51 silicon substrate,
52 Silicon oxide film / silicon nitride film laminated film 53 ArF resist (coating solution),
55 grooves,
59 polysilicon film,
60 ArF resist (coating solution),
59g gate electrode,
64 conductive film,
65 KrF resist,
64a wiring.

Claims (6)

Supplying a coating liquid onto the substrate while rotating the substrate at a first rotation speed having a vertical change in the rotation speed in a first time;
After rotating the substrate at the first rotation speed, and after stopping the supply of the coating liquid, stopping the substrate at a second rotation speed of 0 rpm, which is slower than the first rotation speed;
After stopping the substrate at the second rotational speed, rotating the substrate at a third rotational speed that is slower than the first rotational speed and faster than the second rotational speed;
Have
The lower limit of the first rotation speed is a fourth rotation speed,
The upper limit of the first rotation speed is a fifth rotation speed,
A value obtained by dividing a value obtained by subtracting the fourth rotation speed from the fifth rotation speed by the fifth rotation speed is 0. l or higher state, and are 0.3 or less,
Wherein the first rotation speed, of the coating method according to the first time within said Rukoto variation rate will change uniformly repeating the increase in the rotational speed and lowered to each divided time in.   2. The coating liquid coating method according to claim 1, wherein the fourth rotation speed is faster than the second rotation speed and the third rotation speed. Wherein the first rotation speed, to claim 1 or claim 2, characterized in that varies by repeating increase and decrease of the rotational speed for each of the time divided in a equally first time The coating method of the coating liquid as described. Supplying a resist onto the semiconductor substrate while rotating the semiconductor substrate at a first rotation speed having a change in rotation speed up and down in a first time;
After rotating the semiconductor substrate at the first rotation speed and then stopping the semiconductor substrate at a second rotation speed of 0 rpm slower than the first rotation speed after stopping the resist supply;
A step of forming a resist film by stopping the substrate at the second rotation speed and then rotating the semiconductor substrate at a third rotation speed that is slower than the first rotation speed and faster than the second rotation speed; When,
Have
The lower limit of the first rotation speed is a fourth rotation speed,
The upper limit of the first rotation speed is a fifth rotation speed,
A value obtained by dividing a value obtained by subtracting the fourth rotation speed from the fifth rotation speed by the fifth rotation speed is 0. l or higher state, and are 0.3 or less,
Wherein the first rotation speed, the method of manufacturing a semiconductor device rises volatility repeating the descent of the first rotational speed in each divided time in time, it characterized that you change uniformly. 5. The method of manufacturing a semiconductor device according to claim 4 , wherein the fourth rotation speed is faster than the second rotation speed and the third rotation speed. Before the step of supplying the resist, the step of forming a film to be etched on the semiconductor substrate,
After the step of forming the resist film,
Exposing and developing the resist film to form a resist pattern;
Etching the film to be etched using the resist pattern as a mask;
The method of manufacturing a semiconductor device according to claim 4 or claim 5 characterized in that it has a.

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