JP5398442B2 - Method for producing dye-sensitized photoelectric conversion element and dye-sensitized photoelectric conversion element - Google Patents

Description

  The present invention relates to a method for producing a dye-sensitized photoelectric conversion element of a current collector with reduced contact resistance, and a dye-sensitized photoelectric conversion element with reduced contact resistance of a current collector.

The dye-sensitized solar cell has been proposed by a group such as Gretzel et al. In Switzerland, and has attracted attention as a photoelectric conversion element that can obtain high conversion efficiency (see, for example, Non-Patent Document 1).
Dye-sensitized solar cells can be significantly reduced in price compared to silicon-based conventional solar cells, but the price of conductive substrates used in power generation units is an obstacle to lower prices It has become. In a dye-sensitized solar cell having a conventional structure, the electrode (window electrode) on which light enters is particularly required to have visible light transmission and high conductivity. A substrate coated with a transparent conductive metal oxide such as indium oxide or fluorine-doped tin oxide has been used. Therefore, if a dye-sensitized solar cell having a completely new structure that does not use such a transparent conductive substrate is realized, research and development are being carried out on the assumption that the cost of solar cells can be greatly reduced. .

As a solution to these problems, a novel element structure (see Patent Documents 1, 2, 3, and 4) using a metal wire as a working electrode of a power generation unit has been proposed. However, in these structures, since a metal wire is used for the working electrode, it is difficult to configure a large-area solar cell module, and it is easy to increase the area that a dye-sensitized photoelectric conversion element originally has. As a result, the advantage was lost. Therefore, it is necessary to develop an element structure that does not impair the above advantages.
Furthermore, as described in Patent Document 5 and Patent Document 6, a structure in which metal wires are knitted in a mesh shape has been proposed as a structure that enables a large-area element.

JP 2008-181690 A JP 2008-181691 A JP 2005-196982 A JP 2005-516370 gazette JP 2001-283941 A JP 2001-283944 A

O'Regan B., Graetzel M., Alow cost, high-efficiency solar cell based on dye-sensitized colloidal TiO2 films, Nature, 1991, 353, 737-739

  By the way, in the case of the dye-sensitized solar cell using the metal thin wire as described above, the metal thin wire to be used needs to have corrosion resistance to the electrolyte, so that only limited metals such as Ti and W are used. I could not. However, these wires have a problem that their electrical conductivity is generally low and the price of the wires is high. With respect to this problem, by producing a metal wire in which a Cu wire is coated with Ti (hereinafter referred to as a Ti-coated Cu wire), the problem regarding conductivity and the problem of cost can be overcome. However, when using a Ti-coated Cu wire, Ti is a material that is difficult to solder and has a high contact resistance, which makes it difficult to collect current.

  This invention was made in consideration of such circumstances, and the object thereof is a dye-sensitized photoelectric conversion element having a working electrode having a cloth-like structure formed by knitting a plurality of metal wires in a mesh shape. An object of the present invention is to provide a dye-sensitized photoelectric conversion element that provides a reliable current collecting structure and thus has improved photoelectric conversion efficiency.

The method for producing a dye-sensitized photoelectric conversion element of the present invention includes a working electrode comprising a region in which a plurality of first and second base materials that are conductive and linear are knitted in a mesh shape, The first base material and / or the second base material from the region is connected to the current collecting wiring composed of the portions extending in the longitudinal direction, and the vicinity of the ends of the current collecting wiring is electrically connected together. A dye-sensitized type having a plurality of outer peripheral base materials that are electrically conductive and linear, and other regions in which the current-collecting wiring is knitted in a mesh shape In the method for manufacturing a photoelectric conversion element, as the first base material, the second base material, and the outer peripheral base material, a Cu conductive wire coated with Ti is used, and a Cu foil is stacked on the other region. Furthermore, after two Ti foils are stacked so as to sandwich the other region and the Cu foil, It is brought into contact with from the resistance welding electrode direction forming a resistance welding process crimped with, and forming a molten portion into the interior of the current collector.
In the method for producing a dye-sensitized photoelectric conversion element of the present invention, the pressure bonding may be performed in a spot shape.
In the method for producing a dye-sensitized photoelectric conversion element of the present invention, the pressure bonding may be performed in a line shape.

The dye-sensitized photoelectric conversion element of the present invention includes a working electrode including a region in which a plurality of first and second base materials that are conductive and have a linear shape are knitted in a mesh shape, and the first electrode One end side of the base material or the second base material is electrically connected to the current collecting wiring composed of a portion extending in the longitudinal direction from the region and the vicinity of the end of the current collecting wiring. A dye-sensitized photoelectric device having a plurality of outer peripheral base materials that are conductive and have a linear shape and another region in which the current-collecting wiring is knitted in a mesh shape In the conversion element, the first base material, the second base material, and the outer peripheral base material are obtained by coating Cu conductive wires with Ti, and the current collecting unit includes the other region, Cu foil, The melting part is made of a structure sandwiched between Ti foils.
In the dye-sensitized photoelectric conversion element of the present invention, the structure may be spot-like scattered in the current collector.
In the dye-sensitized photoelectric conversion element of the present invention, the structure may extend in a line shape in the current collector.

In the method for producing a dye-sensitized photoelectric conversion element, the current collector is a Ti foil so that a Cu foil is stacked on a region in which a linear base material is knitted in a mesh shape, and the region and the Cu foil are further sandwiched. Since the manufacturing method is such that the molten portion is formed by pressure bonding using a resistance welding method, the current can be collected more easily than the Cu foil, and the effect of reducing the contact resistance can be obtained.
Moreover, in performing resistance welding, by performing line welding, the area of a fusion | melting part spreads and contact resistance is reduced more.
Furthermore, the dye-sensitized photoelectric conversion element provided with the current collection structure of the present invention has an effect that the photoelectric conversion efficiency is improved by reducing the contact resistance in the current collection part.

It is a schematic block diagram of the photoelectric conversion element which concerns on embodiment of this invention. It is sectional drawing which follows the II-II line | wire of FIG. It is sectional drawing of the current collection part of a photoelectric conversion element, (a) is before resistance welding, (b) is during resistance welding, (c) is sectional drawing after resistance welding. It is a schematic block diagram of the photoelectric conversion element which concerns on other embodiment of this invention.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic configuration diagram illustrating a photoelectric conversion element including a current collector according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the photoelectric conversion element taken along line II-II in FIG.

As shown in FIGS. 1 and 2, the photoelectric conversion element 1 according to the present embodiment includes a power generation unit 2 having a rectangular shape in plan view and a current collection unit 3 provided outside the power generation unit 2. In this configuration, electrons generated in the unit 2 are collected in the current collecting unit 3 via a current collecting wire 4 extending from one side of the power generating unit 2.
The power generation unit 2 is configured such that a working electrode 5 having a cloth-like structure having a rectangular shape in plan view and a plate-like counter electrode 6 having a rectangular shape in plan view are overlapped via a separator 10. The working electrode 5 having a cloth-like structure has a plurality of first base materials 8 and a plurality of second base materials 9 having conductivity, and is arranged around the first base material 8 and the second base material 9 to carry a dye. The porous oxide semiconductor layer 13 is impregnated with the electrolyte 18 together with the sensitizing dye.
Both the first base material 8 and the second base material 9 are linear, and the first base material 8 and the second base material 9 are knitted in a mesh shape to form a rectangular cloth-like structure. .

The counter electrode 6 is a plate-like conductive base material, and is overlapped with the working electrode 5 via the separator 10. The counter electrode 6 has an extraction electrode 6 a that is paired with the current collector 3, and the extraction electrode 6 a extends to the outside of the power generation unit 2.
The working electrode 5 and the counter electrode 6, and the separator 10 inserted between them are housed in the storage bag 14 together with the support sheet 15, and the storage bag 14 is filled with the electrolyte 18.

The support sheet 15 is a sheet made of an insulator, and may be inserted between the storage bag 14 and the working electrode 5 and / or between the storage bag 14 and the counter electrode 6. By inserting the support sheet 15, it becomes easier to support the storage bag 14 in a planar shape, and the storage bag 14 and the working electrode 5 and / or the counter electrode 6 are mechanically connected. It can reduce that the storage bag 14 is damaged by rubbing.
The support sheet 15 is not particularly limited as long as it is light-transmitting and chemically stable with respect to the electrolyte 18. For example, PET, PEN (polyethylene naphthalate), PTFE (polytetrafluoroethylene) Etc. The thickness of the support sheet 15 may be, for example, 10 μm or more and 100 μm or less.

All of the plurality of first base members 8 constituting the working electrode 5 are extended outward from the working electrode 5 to be drawn out to become the current collecting wiring 4, and the current collecting region 19 (other region) is formed outside. Have.
The current collecting area 19 is composed of a first base material 8 constituting the current collecting wiring 4 and a plurality of outer peripheral base materials 20 having conductivity. The outer peripheral base material 20 has a linear shape, and constitutes a part formed by meshing with the current collector wiring 4.

  A Cu foil 21 is overlaid on the current collecting region 19, and the current collecting region 19 and the Cu foil 21 are sandwiched between two Ti foils 22a and 22b. The current collecting region 19, the Cu foil 21, and the Ti foils 22 a and 22 b are pressure-bonded by a resistance welding method and integrated in a plurality of spot welds 24. A part of the Cu foil 21 is drawn to the outside, and current can be collected from this part.

Hereinafter, each component will be described in detail.
The 1st base material 8, the 2nd base material 9, and the outer periphery base material 20 are the metal wires (henceforth Ti covering Cu wire) which coat | covered the 0.05 mm diameter Cu wire with Ti. Hereinafter, an example of a method for producing a Ti-coated Cu wire as a Ti-coated metal wire will be described.
First, Ti is formed into a pipe shape by extrusion molding or the like, and Cu is formed into a linear shape by extrusion molding or the like, and Cu is inserted into the Ti pipe while running these Ti pipe and Cu wire at the same time. Squeezing and bringing them into close contact with each other to obtain a Ti-coated Cu wire.

The working electrode 5 has a structure in which a predetermined number of the first base material 8 and the second base material 9 are knitted in a mesh shape. The 1st base material 8 and the 2nd base material 9 are knitted so that it may mutually contact in an overlapping part, and have the cloth-like structure which makes a rectangle.
The 1st base material 8, the 2nd base material 9, and the outer periphery base material 20 are not restricted to Ti covering Cu wire, The wire which has corrosivity with respect to electrolyte solution, such as W covering Cu wire, can also be used. Wires with high conductivity such as Ti-coated Al wires can also be used.
The thickness (diameter) of such a substrate is preferably 10 μm to 10 mm, for example. However, in order to fully exhibit flexibility, the thinner the substrate, the better.

In the power generation unit 2, the plurality of second base materials 9 extend in the vertical direction in FIG. 1 and are arranged in a predetermined number in the horizontal direction in FIG. 1.
The plurality of first base materials 8 are arranged in a predetermined number in the vertical direction in FIG. 1 and extend to the current collector 3 in the horizontal direction in FIG. That is, all of the first base materials 8 among the base materials constituting the working electrode 5 are drawn out so as to be extended from the power generation section 2 from one side of the power generation section 2 having a rectangular shape.
The extended first base material 8 is knitted in a mesh shape so as to intersect with the outer peripheral base material 20 at a predetermined position, thereby forming a cloth-like structure. It is preferable that the outer periphery base material 20 consists of three or more so that a cloth-like structure can be formed.

Of the first base material 8 and the second base material 9, the porous oxide semiconductor layer 13 is disposed on the surface of the portion that forms the cloth-like structure of the working electrode 5. A sensitizing dye and an electrolyte 18 are supported on the substrate. Of the first substrate 8, the porous oxide semiconductor layer 13 is not disposed on the current collecting wiring portion 4. The semiconductor forming the porous oxide semiconductor layer 13 is titanium oxide (TiO ₂ ). is there. The thickness of the titanium oxide is about 5 μm, but is not particularly limited, and may be, for example, 1 μm to 50 μm.
The semiconductor that forms the porous oxide semiconductor layer 13 is not limited to titanium oxide, and is generally zinc oxide (ZnO), tin oxide (SnO ₂ ), oxidation, as long as it is used for dye-sensitized solar cells. Various semiconductor electrodes such as zinc (ZnO), niobium oxide (Nb ₂ O ₅ ), and tungsten oxide (WO ₃ ) can be used without limitation.

  Examples of the sensitizing dye include ruthenium complexes such as N719, N3, and black dye, metal-containing complexes such as porphyrin and phthalocyanine, and organic dyes such as eosin, rhodamine, and merocyanine. From the above, it is only necessary to appropriately select one having an excitation behavior suitable for the application and the semiconductor used.

  The porous oxide semiconductor layer 13 is impregnated with an electrolytic solution, and this electrolytic solution also constitutes a part of the electrolyte 18. In this case, the electrolyte 18 in the porous oxide semiconductor layer 13 is formed by impregnating the porous oxide semiconductor layer 13 with an electrolytic solution, or impregnating the porous oxide semiconductor layer 13 with an electrolytic solution. Then, the electrolyte solution is gelled (pseudo-solidified) using an appropriate gelling agent and formed integrally with the porous oxide semiconductor layer 13 or based on an ionic liquid Further, a gel electrolyte containing oxide semiconductor particles and conductive particles is used.

As said electrolyte solution, what melt | dissolved electrolyte components, such as an iodine, iodide ion, and tertiary butyl pyridine, in organic solvents and ionic liquids, such as ethylene carbonate and methoxyacetonitrile, is used.
Examples of the gelling agent used for gelling the electrolytic solution include polyvinylidene fluoride, a polyethylene oxide derivative, and an amino acid derivative.
Moreover, if it replaces with a volatile electrolyte solution and is generally used for a dye-sensitized solar cell, not only what a solvent is an ionic liquid or the gelatinized thing but a p-type inorganic semiconductor and an organic hole transport layer Even solids such as these can be used without limitation.

Although it does not specifically limit as said ionic liquid, It is a liquid at room temperature, For example, the normal temperature molten salt which used the compound which has the quaternized nitrogen atom as a cation is mentioned.
Examples of the cation of the room temperature molten salt include quaternized imidazolium derivatives, quaternized pyridinium derivatives, and quaternized ammonium derivatives.
Examples of the anion of the room temperature molten salt include BF ₄ ⁻ , PF ₆ ⁻ , (HF) _n ⁻ , bistrifluoromethylsulfonylimide [N (CF ₃ SO ₂ ) ₂ ⁻ ], and iodide ions.
Specific examples of the ionic liquid include salts composed of quaternized imidazolium-based cations and iodide ions or bistrifluoromethylsulfonylimide ions.

  The oxide semiconductor particles are not particularly limited in terms of the type and particle size of the substance, but are excellent in miscibility with an electrolyte mainly composed of an ionic liquid and gel the electrolyte. Is used. In addition, the oxide semiconductor particles are required to have excellent scientific stability against other coexisting components contained in the electrolyte 18 without reducing the semiconductivity of the electrolyte 18. In particular, even when the electrolyte 18 includes a redox pair such as iodine / iodide ions or bromine / bromide ions, the oxide semiconductor particles are preferably those that do not deteriorate due to an oxidation reaction.

Examples of such oxide semiconductor particles include TiO ₂ , SnO ₂ , SiO ₂ , ZnO, Nb ₂ O ₅ , In ₂ O ₃ , ZrO ₂ , Al ₂ O ₃ , WO ₃ , SrTiO ₃ , Ta ₂ O ₅ , One or a mixture of two or more selected from the group consisting of La ₂ O ₃ , Y ₂ O ₃ , Ho ₂ O ₃ , Bi ₂ O ₃ , CeO ₂ is preferable, and the average particle size is about 2 nm to 1000 nm. preferable.

As the conductive fine particles, conductive particles such as a conductor and a semiconductor are used.
Further, the type and particle size of the conductive particles are not particularly limited, and those that are excellent in miscibility with an electrolytic solution mainly composed of an ionic liquid and that gel the electrolytic solution are used. Furthermore, it is necessary to be excellent in chemical stability against other coexisting components contained in the electrolyte 18.
In particular, even when the electrolyte 18 contains an oxidation-reduction pair such as iodine / iodide ions or bromine / bromide ions, an electrolyte that does not deteriorate due to an oxidation reaction is preferable.

  Examples of such conductive fine particles include those composed mainly of carbon, and specific examples include particles such as carbon nanotubes, carbon fibers, and carbon black. All methods for producing these substances are known, and commercially available products can also be used.

The counter electrode 6 is formed of a Ti plate having a thickness of 0.1 mm, which has a conductive plate shape and has a non-conductive surface. The counter electrode 6 has a catalyst film (not shown) made of Pt on the surface. Note that an extraction electrode 6a is provided at the end for current collection.
In order to prevent a short circuit between the working electrode 5 and the counter electrode 6, a separator 10 made of a nonconductive material and having a thickness of 20 μm is inserted between the working electrode 5 and the counter electrode 6.

Furthermore, the working electrode 5, the counter electrode 6, and the separator 10 are accommodated in a storage bag 14 made of PET or PEN (polyethylene naphthalate). The material used for the storage bag 14 is not limited to PET and PEN, and can be appropriately changed as long as the material has translucency and can withstand the electrolytic solution.
An electrolyte 18 is sealed in the storage bag 14 and sealed with an adhesive so that the current collection wiring 4 of the working electrode 5 and the extraction electrode 6a of the counter electrode 6 are exposed to the outside. As an adhesive material, an adhesive material that can withstand an electrolyte and can provide a good adhesive force with the storage bag 14 and Ti is preferable.

Next, the structure and manufacturing method of the current collector 3 of the photoelectric conversion element of the present invention will be described. FIG. 3 is a diagram illustrating the structure and manufacturing method of the current collector 3.
The current collector 3 of the photoelectric conversion element of the present invention has a cloth-like electrode like the power generator 2. In order to carry out current collection, a Cu foil 21 is used. The Cu foil 21 and the current collecting region 19 forming a cloth-like electrode are overlapped with each other and then integrated using a resistance welding method.

  However, when direct pressure welding is performed between the Cu foil 21 and the current collecting region 19 which is a cloth-like electrode, Cu has a lower melting point than Ti, and therefore, prior to Ti during resistance welding. It will melt. In this case, since the molten Cu is deposited on the resistance welding electrode 25 used in the resistance welding method, the current collecting region 19 and Cu are not joined. In addition, if resistance welding is performed by directly bringing the current collecting region 19 of the cloth electrode and the resistance welding electrode 25 into contact, a difference occurs in the joining state depending on the contact state, so that welding is not stable.

Therefore, in the present invention, as shown in FIG. 3A, the current collecting region 19 and the Cu foil 21 are overlapped, and the current collecting region 19 and the Cu foil 21 are further paired with a pair of Ti foils 22a. , 22b was resistance welded. In FIG. 2B, the current collecting region 19, the Cu foil 21, and the pair of Ti foils 22 a and 22 b are pressed with a pair of resistance welding electrodes 25, and a current is passed to perform resistance welding. It is a figure which shows a mode.
As a result, as shown in FIG. 2 (c), during resistance welding, the inner current collector 3 and the Cu foil 21 are melted to form a melted portion 23, and the Cu foil 21 and the current collector 3 are completely formed. Joined. On the other hand, since the resistance welding electrode 25 is in contact with only the Ti foils 22a and 22b, Cu was not deposited on the resistance welding electrode 25.
After welding, current is collected from the portion of the Cu foil 21 having low contact resistance, so that current collection becomes easy.

In the photoelectric conversion element 1 configured as described above, the cloth-shaped current collecting region 19 and the Cu foil 21 constituting the current collecting unit 3 are pressure-bonded using a resistance welding method, and the current collecting region 19 and the Cu foil 21 are Is melted, the contact resistance between the current collecting region 19 and the Cu foil 21 is greatly reduced, and the photoelectric conversion efficiency is remarkably improved.
In addition, when an electrical device or the like is connected to the Cu foil 21 via a connection conductor, all of the electrons generated in the first base material 8 among the electrons generated in the power generation unit 2 when a light beam such as sunlight is incident. Thus, photoelectric conversion efficiency is improved.
Moreover, since the electric power generation part 2 is the combination of the working electrode 5 of cloth-like structure, the thin plate-like counter electrode 6, and the storage bag 14 which consists of PET, manufacture of the photoelectric conversion element 1 excellent in flexibility is attained. In addition, the photoelectric conversion element 1 can be thinned.
Further, when the working electrode 5 composed of the first base material 8 and the second base material 9 is knitted in a mesh shape so as to cross each other, the current collector 3 is knitted in a mesh shape at the same time, so that the working electrode can be obtained in a shorter time. 5 and the current collecting region 19 can be formed.

(Second Embodiment)
The second embodiment of the present invention will be described in detail. FIG. 4 is a schematic configuration diagram illustrating a photoelectric conversion element including a current collector according to the second embodiment of the present invention.

  This embodiment is substantially the same as the first embodiment except that the welded portion is in a line shape. That is, when manufacturing the current collector 3 of the present embodiment, the pressure welding is performed using the resistance welding method similarly to the eleventh embodiment, but the first embodiment performs spot welding. On the other hand, line welding is performed, and as a result, the welded portion has a line shape as indicated by reference numeral 24a in FIG.

  In the photoelectric conversion element 1 according to the second embodiment having the above-described configuration, the area of the melted portion is expanded and the contact resistance is further reduced by performing line welding in resistance welding.

(Example)
A photoelectric conversion element having the structure shown in FIG. 1 was produced.
First, a Ti-coated Cu wire drawn to a diameter of 0.050 mm was woven into a cloth electrode having a dense plain weave structure using a loom as shown in FIG. The size of the rectangular portion (power generation unit) on which the vertical and horizontal Ti-coated Cu wires are woven is 10 cm × 10 cm, and the number of Ti-coated Cu wires is 1500 to 2000 in the vertical and horizontal directions.
The number of Ti-coated Cu wires constituting the current collector was 1500 to 2000, and the width of the current collector was 1 cm.

This power generation part was immersed in TiO ₂ paste (catalyst conversion, PST-21NR) and then pulled up and temporarily dried (in a state where it was not completely dried). Thereafter, 500 ° C. in an electric furnace to obtain a porous TiO ₂ film with Ti cloth portion was sintered for 1 hour. The film thickness of TiO ₂ was approximately 15 μm. In addition, when the portion other than the power generation unit (10 cm × 10 cm) constituting the working electrode is immersed in the paste, TiO ₂ is formed only by the power generation unit by masking with a tape or the like. became.

Next, the electrode was immersed in a 0.3 mM, acetonitrile / tert-butanol = 1: 1 solution of a ruthenium dye (Solaronix, RutheAlum535-bisTBA, generally called N719) and left at room temperature for 24 hours. A dye was supported on the TiO ₂ surface. After pulling up from the dye solution, it was washed with the above mixed solvent and used as a working electrode.

On the other hand, a counter electrode was prepared by depositing Pt on a 10 cm × 10 cm rectangular Ti plate using a ternary RF sputtering apparatus. The working electrode and the counter electrode were overlapped via a separator made of polyolefin (Asahi Kasei Chemicals, Hypore) with a thickness of 20 μm.
A working electrode and a counter electrode were inserted into a storage bag made of PET and sealed with an adhesive.

  In the current collector, a Cu foil formed longer than the length in the longitudinal direction of the current collector region is superimposed on the current collector region, and these are sandwiched between Ti foils, and then a predetermined spot welder is used. Then, pressure bonding was performed using a resistance welding method. The spot welding interval was about 2 mm along the longitudinal direction of the current collector 3.

When the power generation characteristics of the photoelectric conversion element manufactured as described above were measured, the conversion efficiency was 3.2% (J _SC = 5.6 mA / cm ² , V _OC = 730 mV, ff = 0.71). there were.

(Comparative example)
A current collecting region and a Cu foil plated with Au were sandwiched between clips to produce a photoelectric conversion element having a structure for collecting current from the Cu foil.
In the photoelectric conversion element of this structure, the conversion efficiency is 0.5% (J _SC = 1.5 mA / cm ² , V _OC = 620 mV, ff = 0.51), which is a large performance compared to the examples. Decreased.

  The current collector 3 is formed in the vicinity of the end of the base material extending from one side of the quadrangular power generation unit 2. However, the present invention is not limited to this. For example, the current collector 3 is arranged in four directions from the four sides of the square power generation unit 2. It is also possible to form in the vicinity of each end of the extended base material.

  The present invention is widely applicable to photoelectric conversion elements using metal wires as electrodes.

DESCRIPTION OF SYMBOLS 1 ... Photoelectric conversion element, 2 ... Power generation part, 3 ... Current collection part, 4 ... Current collection wiring, 5 ... Working electrode, 6 ... Counter electrode, 8 ... 1st base material, 9 ... 2nd base material, 10 ... Separator DESCRIPTION OF SYMBOLS 13 ... Porous oxide semiconductor layer, 14 ... Storage bag, 18 ... Electrolyte, 19 ... Current collection area | region, 20 ... Outer periphery base material, 21 ... Cu foil, 22 ... Ti foil, 23 ... Molten part, 24 ... Spot welding Part, 25 ... Electrode for resistance welding.

Claims (6)

A working electrode comprising a region in which a plurality of first and second base materials having conductivity and a linear shape are knitted in a mesh;
The current collector wiring composed of the first base material and / or the second base material extending in the longitudinal direction from the region;
A current collecting portion that electrically connects the vicinity of the ends of the current collecting wiring together,
A method for producing a dye-sensitized photoelectric conversion element having other regions in which a plurality of outer peripheral base materials that are conductive and have a linear shape and the current collecting wiring are knitted in a mesh shape,
As the first base material, the second base material, and the outer peripheral base material, a Cu conductor coated with Ti is used,
After the Cu foil is overlaid on the other region, and two Ti foils are stacked so as to sandwich the other region and the Cu foil, the resistance welding electrodes are brought into contact with each other in the direction perpendicular to each Ti foil. A method for producing a dye-sensitized photoelectric conversion element, wherein pressure-bonding is performed using a resistance welding method, and a melted part is formed inside the current collecting part.   The method for producing a dye-sensitized photoelectric conversion element according to claim 1, wherein the pressure bonding is performed in a spot shape.   The method for producing a dye-sensitized photoelectric conversion element according to claim 1, wherein the pressure bonding is performed in a line shape. A working electrode comprising a region in which a plurality of first and second base materials having conductivity and a linear shape are knitted in a mesh;
One end side of the first base material or the second base material is a current collector wiring composed of a portion extending in the longitudinal direction from the region;
A current collecting portion that electrically connects the vicinity of the ends of the current collecting wiring together,
A dye-sensitized photoelectric conversion element having other regions formed of a plurality of outer peripheral base materials that are conductive and have a linear shape and the wiring for current collection are knitted in a mesh shape,
The first base material, the second base material, and the outer peripheral base material are Cu conductor wires coated with Ti,
The dye-sensitized photoelectric conversion element, wherein the current collector has a structure in which a melted portion composed of the other region and a Cu foil is sandwiched between Ti foils.   The dye-sensitized photoelectric conversion element according to claim 4, wherein the structure is scattered in a spot shape in the current collector.   The dye-sensitized photoelectric conversion element according to claim 4, wherein the structure extends in a line shape in the current collector.

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