JP5379461B2 - Mask blank substrate manufacturing method, mask blank manufacturing method, and mask manufacturing method - Google Patents
Mask blank substrate manufacturing method, mask blank manufacturing method, and mask manufacturing method Download PDFInfo
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本発明は、マスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法に関する。 The present invention relates to a mask blank substrate manufacturing method, a mask blank manufacturing method, and a mask manufacturing method.
従来、マスクブランク用基板の製造方法において、両面研磨装置により基板の主表面を研磨する研磨工程を行う方法が知られている（例えば、特許文献１参照）。また、このような両面研磨装置として、例えば遊星歯車方式の両面研磨装置が知られている。
フォトリソグラフィープロセスで使用される露光波長の短波長化に伴い、マスクブランク用基板に対する高精度化の要求は、日増しに高まっている。例えば、近年、液浸ＡｒＦ露光技術等によりｈｐ４５ｎｍ、３２ｎｍの精度での量産、開発が本格化する状況にあり、ｈｐ４５世代、ｈｐ３２世代に対応した精度でマスクブランク用基板が求められている。 With the shortening of the exposure wavelength used in the photolithography process, the demand for higher accuracy for the mask blank substrate is increasing day by day. For example, in recent years, mass production and development with an accuracy of hp45 nm and 32 nm have been in full swing due to immersion ArF exposure technology and the like, and a mask blank substrate is required with an accuracy corresponding to the hp45 generation and hp32 generation.
そこで、本願の発明者は、このような高い精度のマスクブランク用基板を製造しようとする場合、研磨工程において、研磨装置内での基板の動き方を適切に制御することが必要であることを見出した。例えば、例えば遊星歯車方式の両面研磨装置で基板を研磨する場合において、基板の自転速度や公転速度の設定によっては、研磨によって却って平坦度が悪化し、製品歩留まりや品質に悪影響を及ぼす場合があることを見出した。 Therefore, when the inventors of the present application intend to manufacture such a high-accuracy mask blank substrate, it is necessary to appropriately control how the substrate moves in the polishing apparatus in the polishing step. I found it. For example, in the case of polishing a substrate with a planetary gear type double-side polishing apparatus, for example, depending on the setting of the rotation speed and revolution speed of the substrate, the flatness may be deteriorated by polishing, which may adversely affect the product yield and quality. I found out.
そのため、このような高い精度のマスクブランク用基板を製造しようとする場合、より適切に基板を研磨する方法が求められている。そこで、本発明は、上記の課題を解決できるマスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法を提供することを目的とする。 Therefore, when it is going to manufacture such a high precision mask blank substrate, a method for polishing the substrate more appropriately is demanded. Then, an object of this invention is to provide the manufacturing method of the mask blank board | substrate which can solve said subject, the manufacturing method of a mask blank, and the manufacturing method of a mask.
本願の発明者は、高い平坦度で精密な研磨を行う方法について、鋭意研究を行った。そして、基板を公転及び自転させて基板を研磨する研磨装置において、公転及び自転の回転速度を制御することにより、適切な研磨を行い得ることを見出した。本発明は、以下の構成を有する。 The inventor of the present application has conducted intensive research on a method for performing precise polishing with high flatness. Then, it has been found that in a polishing apparatus that revolves and rotates the substrate to polish the substrate, appropriate polishing can be performed by controlling the rotation speed of the rotation and rotation. The present invention has the following configuration.
（構成１）両面研磨装置の上下両定盤の研磨面間にキャリアで保持された基板を挟持して基板の両主表面を研磨する研磨工程を備えるマスクブランク用基板の製造方法であって、研磨工程は、上下両定盤を同心の回転軸で回転させ、１枚の基板を保持したキャリアを研磨面上の定盤の回転軸からずらした位置に配置して、研磨面上で基板を定盤の回転軸を中心に相対的に公転させ、基板主表面の中心を回転軸としてキャリアを上下両定盤と同じ方向に回転させて、基板を研磨面上で自転させることで基板の両主表面を研磨するものであり、基板の自転回転数と公転回転数とを等しくする。 (Configuration 1) A method of manufacturing a mask blank substrate comprising a polishing step of polishing both main surfaces of a substrate by sandwiching a substrate held by a carrier between polishing surfaces of both upper and lower surface plates of a double-side polishing apparatus, In the polishing process, the upper and lower surface plates are rotated by concentric rotation shafts, the carrier holding one substrate is arranged at a position shifted from the rotation surface of the surface plate on the polishing surface, and the substrate is placed on the polishing surface. Revolve around the rotation axis of the surface plate, rotate the carrier in the same direction as the upper and lower surface plates around the center of the main surface of the substrate, and rotate the substrate on the polishing surface to rotate both sides of the substrate. The main surface is polished, and the rotation speed and revolution speed of the substrate are made equal.
この基板は、例えばガラス基板である。両面研磨装置は、例えば、上定盤と下定盤との間に、複数のキャリアを挟み、それぞれのキャリアに保持された基板を研磨する。
本発明における基板の公転とは、基板が定盤の研磨面を基準として相対的に定盤の回転軸を中心に公転していることをいう。また、基板の自転回転数と公転回転数とが等しいとは、例えば、それぞれの単位時間あたりの回転数が等しいことである。単位時間あたりの回転数が等しいとは、それぞれの回転数が実質的に等しいことであってよい。回転数が実質的に等しいとは、例えば、一定のマージン、動作の微調整、誤差等を見込んだ範囲で、それぞれの回転数が等しいことである。
This substrate is, for example, a glass substrate. For example, the double-side polishing apparatus sandwiches a plurality of carriers between an upper surface plate and a lower surface plate, and polishes a substrate held by each carrier.
The revolution of the substrate in the present invention means that the substrate revolves around the rotation axis of the surface plate relative to the polishing surface of the surface plate. Further, the fact that the rotation speed and revolution speed of the substrate are equal means that the rotation speed per unit time is equal, for example. That the rotation speed per unit time is equal may be that each rotation speed is substantially equal. The fact that the rotational speeds are substantially equal means that the respective rotational speeds are equal within a range that allows for a certain margin, fine adjustment of operation, error, and the like.
このようにした場合、例えば、基板の各位置に対する上定盤及び下定盤の相対速度のベクトルを、基板の自転の１回転分集めると、集めたベクトルは、基板上のいずれの位置でも同一の円になる。また、その結果、例えば、基板の１回転分の期間で平均した場合、基板上の各位置において、この相対速度の平均は等しくなる。 In this case, for example, if the vectors of the relative speeds of the upper and lower surface plates for each position of the substrate are collected for one rotation of the substrate rotation, the collected vectors are the same at any position on the substrate. Become a circle. As a result, for example, when averaged over a period of one rotation of the substrate, the average of the relative speeds is equal at each position on the substrate.
そのため、このように構成すれば、例えば、上定盤及び下定盤の研磨パッドと被研磨物（ワーク）である基板との間において、相対速度運動及び研磨の軌跡密度を適切に均一化できる。また、これにより、基板の両主表面を適切かつ均一に研磨できる。 Therefore, if comprised in this way, relative velocity motion and the locus | trajectory density of grinding | polishing can be equalized appropriately between the polishing pad of an upper surface plate and a lower surface plate, and the board | substrate which is a to-be-polished object (work), for example. This also makes it possible to polish both main surfaces of the substrate appropriately and uniformly.
更には、これにより、例えば、主表面の平坦度が高いマスクブランク用基板を適切に製造できる。また、主表面の平坦度を高めることにより、欠陥の発生を適切に抑えることができる。これにより、例えば、欠陥サイズの微細化及び低欠陥化を適切に実現できる。 Further, this makes it possible to appropriately manufacture, for example, a mask blank substrate having a high main surface flatness. Further, by increasing the flatness of the main surface, it is possible to appropriately suppress the occurrence of defects. Thereby, for example, miniaturization of the defect size and reduction of the defect can be appropriately realized.
（構成２）上下両定盤を同一方向に回転させる。このように構成することにより、上定盤の研磨面、下定盤の研磨面がともに基板に対する相対速度が同じになるため、基板の両方の主表面の平坦度を高めることができる。 (Configuration 2) Both upper and lower surface plates are rotated in the same direction. By configuring in this way, the polishing surface of the upper surface plate and the polishing surface of the lower surface plate have the same relative speed with respect to the substrate, so that the flatness of both main surfaces of the substrate can be increased.
（構成３）キャリアには外周に歯車が設けられており、両面研磨装置には、定盤中心部に設けられた空洞に、定盤の回転軸と同心の回転軸で回転する太陽歯車を備えられ、定盤の外周に、リング状で内側に歯車を有し、定盤の回転軸と同心の回転軸で回転する内歯歯車を備えられており、太陽歯車と内歯歯車がキャリアの歯車と噛み合うことによってキャリアを回転させる。 (Configuration 3) The carrier is provided with a gear on the outer periphery, and the double-side polishing apparatus is provided with a sun gear that rotates in a cavity provided in the center of the surface plate and that rotates on a rotation axis concentric with the rotation axis of the surface plate. A ring-shaped gear on the outer periphery of the surface plate, and an internal gear that rotates on a rotation shaft concentric with the rotation shaft of the surface plate. The sun gear and the internal gear are carrier gears. Rotate the carrier by meshing with.
このように構成すれば、例えば、基板の自転及び公転を適切に行わせることができる。研磨工程は、例えば、上定盤、下定盤、キャリア（太陽歯車と内歯歯車の回転数を調整して、キャリアの回転数を調整する）の単位時間あたりの回転数を等しくして、基板の研磨を行う。 If comprised in this way, the rotation and revolution of a board | substrate can be performed appropriately, for example. In the polishing process, for example, the upper surface plate, the lower surface plate, and the carrier (adjusting the rotational speed of the sun gear and the internal gear to adjust the rotational speed of the carrier) are made equal to the rotational speed per unit time. Polishing.
（構成４）上下定盤、太陽歯車および内歯歯車の各回転数を調整することで、基板の自転回転数と公転回転数とが等しくなるように制御する。このように構成すれば、基板の自転回転数及び公転回転数を適切に制御できる。 (Configuration 4) By adjusting the rotational speeds of the upper and lower surface plates, the sun gear, and the internal gear, the rotation speed and revolution speed of the substrate are controlled to be equal. If comprised in this way, the rotation speed and revolution speed of a board | substrate can be controlled appropriately.
（構成５）研磨工程は、基板の主表面に対する最終の研磨を行う超精密研磨工程である。超精密研磨工程は、例えば、コロイダルシリカ砥粒を含む研磨液を用いて研磨を行う研磨工程である。このコロイダルシリカ砥粒は、例えば、有機ケイ素化合物を加水分解することで生成したコロイダルシリカを含む研磨砥粒である。 (Configuration 5) The polishing step is an ultra-precision polishing step for performing final polishing on the main surface of the substrate. The ultraprecision polishing process is a polishing process in which polishing is performed using a polishing liquid containing colloidal silica abrasive grains, for example. This colloidal silica abrasive grain is an abrasive grain containing colloidal silica produced | generated by hydrolyzing an organosilicon compound, for example.
また、超精密研磨工程は、例えば、基板の主表面を所定の表面粗さに仕上げる前段の研磨工程の後に仕上げの研磨を行う工程である。この前段の研磨は、例えば、酸化セリウムを主材とする研磨液を用いて、基板の両主表面を研磨する。このようにすれば、例えば、基板の両主表面を、より高い平坦度に適切に研磨できる。 In addition, the ultraprecision polishing step is a step of performing final polishing after, for example, a previous polishing step in which the main surface of the substrate is finished to a predetermined surface roughness. In this first stage polishing, for example, both main surfaces of the substrate are polished using a polishing liquid mainly composed of cerium oxide. In this way, for example, both main surfaces of the substrate can be appropriately polished with higher flatness.
（構成６）研磨工程は、研磨液を供給しつつ基板の両主表面の研磨を行う工程であり、上定盤の研磨面には、研磨液の供給穴が複数並ぶ列である供給穴列が複数形成されており、供給穴列の供給穴は、上定盤の回転軸側から外側に、かつ上定盤の回転方向の進行側に向かって螺旋状に等間隔で配置されており、各供給穴列の最も回転軸側の供給穴は、回転軸と同心円上に、かつ円周方向に等間隔で配置されている。 (Structure 6) The polishing step is a step of polishing both main surfaces of the substrate while supplying the polishing liquid, and a supply hole array in which a plurality of supply holes for the polishing liquid are arranged on the polishing surface of the upper surface plate Are formed, and the supply holes of the supply hole row are arranged at equal intervals spirally from the rotation axis side of the upper surface plate to the outside and toward the traveling side in the rotation direction of the upper surface plate, The supply holes on the most rotating shaft side of each supply hole row are arranged concentrically with the rotating shaft and at equal intervals in the circumferential direction.
このようにすれば、例えば、上定盤と下定盤との間において基板が通過する領域に対して、適切かつ均一に研磨液を供給できる。また、これにより、例えば、基板の両主表面をより適切かつ均一に研磨できる。 In this way, for example, the polishing liquid can be supplied appropriately and uniformly to the region through which the substrate passes between the upper surface plate and the lower surface plate. In addition, for example, both main surfaces of the substrate can be polished more appropriately and uniformly.
（構成７）供給穴列の最も外側の供給穴は、当該供給穴列に対して上定盤の回転方向側に隣接する別の供給穴列の最も内側の供給穴よりも、上定盤の回転方向の進行側にある。 (Configuration 7) The outermost supply hole of the supply hole row is located on the upper surface plate more than the innermost supply hole of another supply hole row adjacent to the supply hole row on the rotation direction side of the upper surface plate. On the traveling side in the direction of rotation.
このようにすれば、例えば、より適切かつ均一に研磨液を供給できる。また、これにより、例えば、基板の両主表面をより適切かつ均一に研磨できる。 In this way, for example, the polishing liquid can be supplied more appropriately and uniformly. In addition, for example, both main surfaces of the substrate can be polished more appropriately and uniformly.
（構成８）マスクブランクの製造方法であって、構成１から７のいずれかに記載のマスクブランク用基板の製造方法で製造したマスクブランク用基板の主表面上に、マスクパターン形成用の薄膜を形成する。このようにすれば、例えば、構成１から７と同様の効果を得ることができる。また、これにより、例えば、マスクブランクを高い精度で適切に製造できる。 (Configuration 8) A mask blank manufacturing method, wherein a mask pattern forming thin film is formed on a main surface of a mask blank substrate manufactured by the mask blank substrate manufacturing method according to any one of configurations 1 to 7. Form. In this way, for example, the same effects as in configurations 1 to 7 can be obtained. Thereby, for example, a mask blank can be appropriately manufactured with high accuracy.
尚、マスクパターン形成用の薄膜とは、例えば、位相シフト膜、遮光膜等である。また、位相シフト膜と遮光膜とを積層した膜や、位相シフト機能と遮光機能を有するハーフトーン膜等、反射膜、吸収体膜等であってもよい。また、これらの膜は、複数の層を積層した多層膜であってもよい。 The thin film for forming the mask pattern is, for example, a phase shift film, a light shielding film, or the like. Moreover, a film in which a phase shift film and a light shielding film are laminated, a halftone film having a phase shift function and a light shielding function, a reflection film, an absorber film, or the like may be used. These films may be multilayer films in which a plurality of layers are stacked.
（構成９）マスクの製造方法であって、構成８に記載のマスクブランクの製造方法で製造したマスクブランクにおける薄膜をパターニングしてマスクパターンを形成する。このように構成すれば、例えば、構成８と同様の効果を得ることができる。また、これにより、マスクを高い精度で適切に製造できる。 (Configuration 9) A mask manufacturing method, in which a thin film in a mask blank manufactured by the mask blank manufacturing method described in Configuration 8 is patterned to form a mask pattern. If comprised in this way, the effect similar to the structure 8 can be acquired, for example. Thereby, a mask can be appropriately manufactured with high accuracy.
本発明によれば、定盤の回転方向と基板（キャリア）の回転方向とを同じ方向として、基板の自転方向と公転方向とが同じくし、さらに基板の自転回転数と公転回転数とを等しくすることによって、研磨面に対するトータルの相対速度を基板主表面全体で均一化でき、研磨量を均一化することができる。これにより、例えば、主表面の平坦度が高いマスクブランク用基板を適切に製造できる。 According to the present invention, the rotation direction of the surface plate and the rotation direction of the substrate (carrier) are the same direction, the rotation direction of the substrate and the revolution direction are the same, and the rotation speed and revolution speed of the substrate are equal. By doing so, the total relative speed with respect to the polishing surface can be made uniform over the entire main surface of the substrate, and the polishing amount can be made uniform. Thereby, for example, a mask blank substrate having a high flatness of the main surface can be appropriately manufactured.
以下、本発明に係る実施形態を、図面を参照しながら説明する。図１は、本発明の一実施形態に係るマスクブランク用基板の製造方法における研磨工程で使用される両面研磨装置１０の一例を示す。図１（ａ）は、両面研磨装置１０の構成の一例を示す。図１（ｂ）は、両面研磨装置１０内における基板２２の配置の一例を示す。 Hereinafter, embodiments according to the present invention will be described with reference to the drawings. FIG. 1 shows an example of a double-side polishing apparatus 10 used in a polishing process in a method for manufacturing a mask blank substrate according to an embodiment of the present invention. FIG. 1A shows an example of the configuration of the double-side polishing apparatus 10. FIG. 1B shows an example of the arrangement of the substrates 22 in the double-side polishing apparatus 10.
両面研磨装置１０は、マスクブランク用基板の素材であるガラスの基板２２の両主表面を研磨する遊星歯車方式の研磨装置である。両面研磨装置１０は、上定盤１２、下定盤１４、太陽歯車１６、及び内歯歯車１８を備え、上下両定盤（上定盤１２、下定盤１４）は、中心部に空洞１２ａ，１４ａを有するドーナツ状であり、空洞１２ａ，１４ａにキャリア２０で保持された基板２２を挟持して基板２２の両主表面を研磨する。 The double-side polishing apparatus 10 is a planetary gear type polishing apparatus that polishes both main surfaces of a glass substrate 22 that is a material of a mask blank substrate. The double-side polishing apparatus 10 includes an upper surface plate 12, a lower surface plate 14, a sun gear 16, and an internal gear 18, and the upper and lower surface plates (the upper surface plate 12 and the lower surface plate 14) have cavities 12a and 14a at the center. The substrate 22 held by the carrier 20 is sandwiched between the cavities 12a and 14a, and both main surfaces of the substrate 22 are polished.
尚、本例において、両面研磨装置１０は、上下両定盤の間に、例えば図１（ｂ）に示すように、複数のキャリア２０を保持する。複数のキャリア２０は、例えば、太陽歯車１６と内歯歯車１８との間のドーナツ状の領域において、上定盤１２及び下定盤１４の円周方向へ並べて配置される。 In this example, the double-side polishing apparatus 10 holds a plurality of carriers 20 between upper and lower surface plates, for example, as shown in FIG. The plurality of carriers 20 are arranged side by side in the circumferential direction of the upper surface plate 12 and the lower surface plate 14, for example, in a donut-shaped region between the sun gear 16 and the internal gear 18.
また、キャリア２０は、基板２２を収容する４角穴状の貫通部を中央に有する円板状体であり、外周に歯車が設けられており、外周部において太陽歯車１６及び内歯歯車１８と噛み合う。各キャリア２０は、マスクブランク用基板の形状である四角板状の基板２２をそれぞれ１枚保持する。 The carrier 20 is a disk-like body having a square hole-shaped through portion that accommodates the substrate 22 in the center, and a gear is provided on the outer periphery, and the sun gear 16 and the internal gear 18 on the outer periphery. Engage. Each carrier 20 holds one square plate-like substrate 22 which is the shape of a mask blank substrate.
上定盤１２及び下定盤１４は、基板２２の上側及び下側の定盤である。本例において、上定盤１２及び下定盤１４は、ドーナツ状体であり、これらのドーナツ状体の中心軸である定盤中心軸１０２を中心にして、キャリア２０に保持された基板２２を間に挟みつつ、同じ方向へ回転する。上定盤１２及び下定盤１４は、基板２２と対向する面に、研磨パッド２４をそれぞれ有する。研磨パッド２４は、例えばスウェードタイプの軟質ポリシャであり、上定盤１２及び下定盤１４において基板２２と対向する面にそれぞれ貼り付けられている。 The upper surface plate 12 and the lower surface plate 14 are the upper surface plate and the lower surface plate of the substrate 22. In this example, the upper surface plate 12 and the lower surface plate 14 are doughnut-shaped bodies, and the substrate 22 held by the carrier 20 is interposed between the surface plate center axis 102 that is the central axis of these donut-shaped bodies. And rotate in the same direction. The upper surface plate 12 and the lower surface plate 14 each have a polishing pad 24 on the surface facing the substrate 22. The polishing pad 24 is, for example, a suede type soft polisher, and is attached to the surface of the upper surface plate 12 and the lower surface plate 14 facing the substrate 22.
尚、本例において、上定盤１２には、更に、研磨液（スラリー）を供給する研磨液供給穴が形成されている。これにより、両面研磨装置１０は、上定盤１２及び下定盤１４の研磨パッド２４と基板２２との間に、研磨液を供給する。 In this example, the upper surface plate 12 further has a polishing liquid supply hole for supplying a polishing liquid (slurry). Thereby, the double-side polishing apparatus 10 supplies the polishing liquid between the polishing pad 24 of the upper surface plate 12 and the lower surface plate 14 and the substrate 22.
太陽歯車１６及び内歯歯車１８は、キャリア２０の外周面と噛み合うギアである。太陽歯車１６は、上定盤１２及び下定盤１４の中心側からキャリア２０と接する外歯の歯車であり、上下両定盤１２，１４中心部の空洞１２ａ，１４ａに備えられ、上下定盤１２，１４の回転軸である定盤中心軸１０２と同心の回転軸で回転する。また、内歯歯車１８は、上定盤１２及び下定盤１４の外周側からキャリア２０と接する内歯の歯車である。内歯歯車１８は、リング状で内側に歯車を有する歯車であり、上下定盤１２，１４の外周に備えられ、定盤の回転軸である定盤中心軸１０２と同心の回転軸で回転する。 The sun gear 16 and the internal gear 18 are gears that mesh with the outer peripheral surface of the carrier 20. The sun gear 16 is an external gear that comes into contact with the carrier 20 from the center side of the upper surface plate 12 and the lower surface plate 14, and is provided in the cavities 12 a and 14 a at the center of the upper and lower surface plates 12, 14. , 14 and the rotation axis concentric with the center axis 102 of the surface plate. The internal gear 18 is an internal gear that contacts the carrier 20 from the outer peripheral side of the upper surface plate 12 and the lower surface plate 14. The internal gear 18 is a ring-shaped gear having a gear inside, and is provided on the outer periphery of the upper and lower surface plates 12, 14, and rotates on a rotation axis concentric with the surface plate central axis 102 which is the rotation axis of the surface plate. .
そして、太陽歯車１６と内歯歯車１８は、キャリア２０の歯車と噛み合うことによって、キャリア２０を回転させる。また、これにより、太陽歯車１６及び内歯歯車１８は、上定盤１２と下定盤１４との間において、基板２２を公転及び自転させる。本発明でいう基板２２の公転は、定盤に対しての相対的な公転で考える必要があり、研磨工程時は定盤自体が回転していることから、仮に基板１２が静止状態であっても定盤の研磨面上を相対的に公転していることになる。よって、本発明では、基板２２の公転回転数は、太陽歯車１６と内歯歯車１８によって、キャリア２０（基板２２）を定盤中心軸１０２を中心に回転させることによる回転数に、定盤自体の回転数を差し引いた回転数で考えなければならない。 The sun gear 16 and the internal gear 18 are engaged with the gear of the carrier 20 to rotate the carrier 20. Accordingly, the sun gear 16 and the internal gear 18 revolve and rotate the substrate 22 between the upper surface plate 12 and the lower surface plate 14. The revolution of the substrate 22 in the present invention needs to be considered as a relative revolution with respect to the surface plate, and since the surface plate itself rotates during the polishing process, the substrate 12 is temporarily stationary. Is relatively revolving on the polished surface of the surface plate. Therefore, in the present invention, the revolution speed of the substrate 22 is set to the rotation speed by rotating the carrier 20 (substrate 22) around the center axis 102 of the surface plate by the sun gear 16 and the internal gear 18, and the surface plate itself. You must consider the number of rotations minus the number of rotations.
以上の構成により、研磨工程において、両面研磨装置１０は、上下両定盤を同心の回転軸で同一方向に回転させる。また、１枚の基板２２を保持したキャリア２０を研磨面上の定盤の回転軸からずらした位置に配置して、研磨面上で基板２２を定盤の回転軸を中心に相対的に公転させる。また、基板主表面の中心を回転軸としてキャリア２０を上下両定盤と同じ方向に回転させて、基板２０を研磨面上で自転させる。これにより、両面研磨装置１０は、基板２０の両主表面を研磨する。なお、キャリア２０（基板２２）を定盤の回転軸からずらした位置に配置するのは、定盤の回転軸周辺の領域は、回転中心付近の研磨面の移動速度は非常に遅く、そこに基板２２を配置してもほとんど研磨ができないためである。 With the above configuration, in the polishing process, the double-side polishing apparatus 10 rotates both the upper and lower surface plates in the same direction with concentric rotation shafts. In addition, the carrier 20 holding one substrate 22 is arranged at a position shifted from the rotation axis of the surface plate on the polishing surface, and the substrate 22 is relatively revolved around the rotation axis of the surface plate on the polishing surface. Let Further, the carrier 20 is rotated in the same direction as the upper and lower surface plates with the center of the substrate main surface as the rotation axis, so that the substrate 20 is rotated on the polishing surface. Thereby, the double-side polishing apparatus 10 polishes both main surfaces of the substrate 20. The carrier 20 (substrate 22) is arranged at a position shifted from the rotation axis of the surface plate because the moving speed of the polishing surface near the rotation center is very slow in the area around the rotation axis of the surface plate. This is because even if the substrate 22 is disposed, polishing is hardly possible.
両面研磨装置１０においては、例えば両面研磨装置１０の動作を制御する制御部に、上定盤１２、下定盤１４、太陽歯車１６、及び内歯歯車１８のそれぞれについて、回転数、回転時間、及び荷重シーケンス（研磨時間と荷重）等が予め設定されている。そして、両面研磨装置１０は、これらの設定に従って、基板２２を研磨加工する。本例によれば、上定盤１２と下定盤１４との間で基板２２に遊星運動を行わせ、基板２２の両主表面を適切に研磨できる。 In the double-side polishing apparatus 10, for example, the control unit that controls the operation of the double-side polishing apparatus 10 includes the rotation number, the rotation time, and the rotation time for the upper surface plate 12, the lower surface plate 14, the sun gear 16, and the internal gear 18. A load sequence (polishing time and load) and the like are set in advance. Then, the double-side polishing apparatus 10 polishes the substrate 22 according to these settings. According to this example, planetary motion is performed on the substrate 22 between the upper surface plate 12 and the lower surface plate 14, and both main surfaces of the substrate 22 can be polished appropriately.
ここで、本例において製造されるマスクブランク用基板は、例えば、フォトマスクブランク又は位相シフトマスクブランク等のマスクブランクの製造に用いられる。このマスクブランクは、例えば液浸ＡｒＦ露光用、ＡｒＦエキシマレーザー露光用等のマスクブランクである。また、このマスクブランクは、例えばＬＳＩ（半導体集積回路）用のマスクの製造に用いられる。 Here, the mask blank substrate manufactured in this example is used for manufacturing a mask blank such as a photomask blank or a phase shift mask blank. This mask blank is, for example, a mask blank for immersion ArF exposure or ArF excimer laser exposure. The mask blank is used for manufacturing a mask for LSI (semiconductor integrated circuit), for example.
また、このマスクブランクは、例えばｈｐ４５世代、好ましくはｈｐ３２世代のマスクの製造に用いられる。ｈｐ４５世代、及びｈｐ３２世代のマスクとは、例えば、ＤＲＡＭ製造用のマスクにおける最小の配線幅の半分（ハーフピッチ）がそれぞれ４５ｎｍ、３２ｎｍとなるテクノロジ世代のマスクである。 Further, this mask blank is used, for example, for manufacturing a mask of hp45 generation, preferably hp32 generation. The hp45 generation and hp32 generation masks are, for example, technology generation masks in which half of the minimum wiring width (half pitch) in a mask for manufacturing DRAM is 45 nm and 32 nm, respectively.
尚、このマスクブランクは、例えばＬＣＤ（液晶表示板）用マスク等の製造に用いられてもよい。また、例えば、ＥＵＶ用反射型のマスクブランク等であってよい。 In addition, this mask blank may be used for manufacture of a mask for LCD (liquid crystal display board) etc., for example. For example, it may be a reflective mask blank for EUV.
また、基板２２の材料となるガラスは、特に限定されない。基板２２の材料としては、例えば、合成石英ガラス、ホウケイ酸ガラス、アルミノシリケートガラス、アルミノボロシリケートガラス、ソーダライムガラス、無アルカリガラス、ＳｉＯ２−ＴｉＯ２低熱膨張ガラスなどが挙げられる。 Moreover, the glass used as the material of the substrate 22 is not particularly limited. Examples of the material of the substrate 22 include synthetic quartz glass, borosilicate glass, aluminosilicate glass, aluminoborosilicate glass, soda lime glass, alkali-free glass, and SiO 2 —TiO 2 low thermal expansion glass.
図２は、両面研磨装置１０内における基板２２の動きについて更に詳しく説明する図である。図２（ａ）は、基板２２の公転及び自転の動作について説明する図である。本例においては、両面研磨装置１０における太陽歯車１６及び内歯歯車１８（図１参照）の回転等に応じて、キャリア２０は、例えば矢印２０２で示す方向へ回転する。そして、キャリア２０のこの回転により、キャリア２０に保持されている基板２２は、矢印２０２の方向への自転運動を行う。また、キャリア２０は、太陽歯車１６と内歯歯車１８と間に回転数差を設ける、例えば、内歯歯車１８の回転数の方を早くすると、矢印２０４で示す方向へ移動することにより、定盤中心軸１０２の周りを周回する。そして、キャリア２０のこの移動と、定盤自体の回転により、基板２２は、定盤の研磨面に対して矢印２０４の方向への公転運動を行う。尚、基板２２の自転の方向や、研磨面に対する相対的な公転の方向は、両方が同じ回転方向であれば、図２（ａ）に図示した方向と逆方向に回転させてもよい。 FIG. 2 is a diagram for explaining the movement of the substrate 22 in the double-side polishing apparatus 10 in more detail. FIG. 2A is a diagram illustrating the revolution and rotation of the substrate 22. In this example, the carrier 20 rotates, for example, in the direction indicated by the arrow 202 according to the rotation of the sun gear 16 and the internal gear 18 (see FIG. 1) in the double-side polishing apparatus 10. Then, by this rotation of the carrier 20, the substrate 22 held by the carrier 20 rotates in the direction of the arrow 202. Further, the carrier 20 is provided with a rotational speed difference between the sun gear 16 and the internal gear 18. For example, when the rotational speed of the internal gear 18 is increased, the carrier 20 moves in the direction indicated by the arrow 204, thereby Circulate around the center axis 102 of the panel. By this movement of the carrier 20 and the rotation of the surface plate itself, the substrate 22 revolves in the direction of the arrow 204 with respect to the polishing surface of the surface plate. Note that the direction of rotation of the substrate 22 and the direction of revolution relative to the polishing surface may be rotated in the direction opposite to the direction illustrated in FIG.
図２（ｂ）は、基板２２が研磨される様子の一例を示す図である。研磨工程において研磨される研磨量は、経験上、プレストンの法則として、被研磨物（ワーク）である基板２２と工具である上定盤１２及び下定盤１４との間における相対速度、圧力、及び時間に比例することが知られている。 FIG. 2B shows an example of how the substrate 22 is polished. The amount of polishing to be polished in the polishing step is, as experience, the relative speed, pressure, and pressure between the substrate 22 that is the object to be polished (work) and the upper surface plate 12 and the lower surface plate 14 that are tools as Preston's law. It is known to be proportional to time.
また、両面研磨装置１０において、基板２２に対する上定盤１２及び下定盤１４の相対的な動きを考えた場合、上定盤１２及び下定盤１４の各部は、矢印２０６で示すような軌跡で、基板２２の各部を通過する。また、上定盤１２及び下定盤１４の研磨面各部の速度は、定盤の回転軸ではゼロであり、外周側に向かって速くなっていき、最外周で最大となるため、基板２２の定盤（研磨面）外周側に位置する部分では研磨量が多く、定盤内周側に位置する部分では研磨量が少なくなる。基板はキャリア２０によって、定盤と同じ回転方向に自転させられているため、特に、定盤内周側でも、定盤の回転速度ベクトルと基板の自転の回転速度ベクトルとが逆方向になる領域である主表面の角部周辺の領域２０８では、基板２２の全領域のなかで最も定盤との相対速度が遅くなるため、研磨量が最も少なくなる。 In the double-side polishing apparatus 10, when considering the relative movement of the upper surface plate 12 and the lower surface plate 14 with respect to the substrate 22, each part of the upper surface plate 12 and the lower surface plate 14 follows a locus as indicated by an arrow 206. It passes through each part of the substrate 22. Further, the speed of each part of the polishing surface of the upper surface plate 12 and the lower surface plate 14 is zero on the rotating shaft of the surface plate, increases toward the outer peripheral side, and becomes maximum at the outermost peripheral surface. The portion located on the outer peripheral side of the platen (polishing surface) has a large amount of polishing, and the portion located on the inner peripheral side of the surface plate has a small amount of polishing. Since the substrate is rotated by the carrier 20 in the same rotation direction as the surface plate, a region where the rotation speed vector of the surface plate and the rotation speed vector of the substrate rotation are in the opposite directions even on the inner peripheral side of the surface plate. In the region 208 around the corner of the main surface, the relative speed with respect to the surface plate is the slowest among all the regions of the substrate 22, and the amount of polishing is the smallest.
研磨工程中は、基板２２は自転するため、４隅とも領域２０８で研磨されることにはなるが、４隅の間でその領域２０８を通過する回数（時間）にばらつきがあると、基板主表面の平坦度の悪化が生じやすくなる。
これに対して、基板２２の定盤上での相対的な公転速度及び自転速度の設定により、基板２２の各位置における相対速度をコントロールし、基板２２の位置による研磨量の差を抑えることが可能である。具体的には、基板２２の定盤上での相対公転速度（相対公転回転数）：自転速度（自転回転数）＝１：１となるように調整すると、基板２２の位置による研磨量を実質的に均一にすることができる。相対公転速度（相対公転回転数）の調整は、例えば、定盤の回転数を最初に定め、太陽歯車の半径、内歯歯車の半径、キャリアの半径との関係から、定盤の回転数を差し引いたキャリアの公転回転数（定盤の回転方向とキャリアの回転方向がともに同じ方向の場合）とキャリアの自転回転数の比が１：１となるように、太陽歯車と内歯歯車の各回転数を選定するとよい。
Since the substrate 22 rotates during the polishing process, the four corners are polished in the region 208. However, if the number of times (time) of passing through the region 208 between the four corners varies, The flatness of the surface is likely to deteriorate.
On the other hand, by setting the relative revolution speed and rotation speed of the substrate 22 on the surface plate, the relative speed at each position of the substrate 22 is controlled, and the difference in polishing amount depending on the position of the substrate 22 can be suppressed. Is possible. Specifically, when the relative revolution speed (relative revolution speed) on the surface plate of the substrate 22 is adjusted to be 1: 1, the polishing amount depending on the position of the substrate 22 is substantially adjusted. Can be made uniform. To adjust the relative revolution speed (relative revolution speed), for example, the speed of the surface plate is determined first, and the speed of the surface plate is determined from the relationship between the radius of the sun gear, the radius of the internal gear, and the radius of the carrier. Each of the sun gear and the internal gear is set so that the ratio of the revolution speed of the subtracted carrier (when the rotation direction of the surface plate and the rotation direction of the carrier are the same) and the rotation speed of the carrier is 1: 1. It is recommended to select the rotation speed.
図３に基板の相対公転回転数：自転回転数＝１：１とした場合における、定盤が１回転したときの基板の研磨軌跡を示す。この図３においては、便宜上、基板２２の主表面の中心部分、初期位置で定盤上の最も内周側にある部分およびもっとも外周側にある部分の３点について、それぞれの研磨軌跡を示した。当然ながら、基板の中心部分の研磨軌跡については常に相対速度の同じ部分を通過しており、真円を描いている。また、基板の最も内周側の部分の研磨軌跡については、最も内周側と最も外周側との間で均等になるような真円を描いている。さらに、基板の最も外周側の部分の研磨軌跡については、最も外周側と最も内周側との間で均等になるような真円を描いている。つまり、基板の相対公転回転数：自転回転数＝１：１とした場合、基板主表面のどの部分でも、定盤が１周する間におけるトータルの研磨面の通過速度が等しくなり、研磨量も均一にできるということがわかる。 FIG. 3 shows the polishing trajectory of the substrate when the surface plate makes one rotation when the relative revolution number of the substrate: rotational rotation number = 1: 1. In FIG. 3, for the sake of convenience, the respective polishing trajectories are shown for the central portion of the main surface of the substrate 22, the innermost portion on the surface plate at the initial position, and the outermost portion on the surface plate. . Of course, the polishing locus of the central portion of the substrate always passes through the same portion of the relative speed and draws a perfect circle. In addition, the polishing locus of the innermost peripheral portion of the substrate is drawn as a perfect circle that is uniform between the innermost peripheral side and the outermost peripheral side. Furthermore, the polishing trajectory of the outermost part of the substrate has a perfect circle that is even between the outermost side and the innermost side. In other words, when the relative revolution speed of the substrate: rotation speed = 1: 1, the passing speed of the total polishing surface is the same during one turn of the surface plate in any part of the main surface of the substrate, and the polishing amount is also It can be seen that it can be made uniform.
図４に基板の相対公転回転数：自転回転数＝１：０．５とした場合における、定盤が１回転したときの基板の研磨軌跡を示す。図４においても、便宜上、基板２２の主表面の中心部分、初期位置で定盤上の最も内周側にある部分および最も外周側にある部分の３点について、それぞれの研磨軌跡を示した。当然ながら、基板の中心部分の研磨軌跡については常に相対速度の同じ部分を通過しており、真円を描いている。しかし、基板の最も内周側の部分の研磨軌跡については、真円ではあるが、最も内周側と中間部分（最も内周側と最も外周側の中間点のエリア、基板の中心部分が通る研磨軌跡のエリア）との間しか描かれない。さらに、基板の最も外周側の部分の研磨軌跡についても、真円ではあるが、最も外周側と中間部分（最も内周側と最も外周側の中間点のエリア、基板の中心部分が通る研磨軌跡のエリア）との間しか描かれない。つまり、基板の相対公転回転数：自転回転数＝１：０．５とした場合、基板主表面のどの部分でも、定盤が１周する間におけるトータルの研磨面の通過速度にはばらつきが生じてしまい、研磨量も均一にできないということがわかる。 FIG. 4 shows the polishing trajectory of the substrate when the surface plate makes one rotation when the relative revolution number of the substrate: rotational rotation number = 1: 0.5. Also in FIG. 4, for the sake of convenience, the respective polishing trajectories are shown for the central portion of the main surface of the substrate 22, the innermost portion on the surface plate at the initial position, and the outermost portion. Of course, the polishing locus of the central portion of the substrate always passes through the same portion of the relative speed and draws a perfect circle. However, the polishing trajectory of the innermost part of the substrate is a perfect circle, but the innermost part and the intermediate part (the area of the intermediate point between the innermost part and the outermost part, the central part of the substrate passes). It is drawn only between the area of the polishing locus). Further, the polishing trajectory of the outermost part of the substrate is also a perfect circle, but the outermost side and the intermediate part (the polishing point traversed by the area of the intermediate point between the innermost side and the outermost side, the central part of the substrate) It is only drawn between the area. In other words, when the relative revolution speed of the substrate: rotation speed = 1: 0.5, there is a variation in the total passing speed of the polishing surface during one turn of the surface plate in any part of the main surface of the substrate. As a result, the polishing amount cannot be made uniform.
以下、この点について、更に詳しく説明する。図５は、相対速度のコントロールの一例を示す図である。図５（ａ）は、基板２２に対する上定盤１２の相対速度の一例を示す。尚、図示は省略したが、以下に説明する点は、下定盤１４の相対速度についても同様である。 Hereinafter, this point will be described in more detail. FIG. 5 is a diagram showing an example of relative speed control. FIG. 5A shows an example of the relative speed of the upper surface plate 12 with respect to the substrate 22. Although not shown, the points described below are the same for the relative speed of the lower surface plate 14.
本例において、キャリア２０は、それぞれ１枚の基板２２を保持する。この場合、キャリア２０の回転によって基板２２が自転しても、それぞれの基板２２の中心の位置は、変化しない。そのため、基板２２の中心における相対速度は、例えば、上定盤１２の回転速度のベクトルと平行で同じ大きさのベクトルの速度となる。 In this example, each carrier 20 holds one substrate 22. In this case, even if the substrate 22 rotates due to the rotation of the carrier 20, the position of the center of each substrate 22 does not change. Therefore, the relative speed at the center of the substrate 22 is, for example, a vector speed parallel to the rotation speed vector of the upper surface plate 12 and having the same magnitude.
図５（ｂ）は、基板２２の主表面上のある１点について、自転を１回転する間の相対速度のベクトルを集めた様子の一例を示す。上記のように相対速度をコントロールした場合、例えば、基板２２の各位置に対する上定盤１２の相対速度のベクトルを、基板２２の自転の１回転分集めると、集めたベクトルは、基板２２上のいずれの位置でも同一の円になる。その結果、例えば、基板２２の１回転分の期間で平均した場合、基板２２上の各位置において、相対速度の平均は等しくなる。 FIG. 5B shows an example of a state in which vectors of relative speeds during one rotation of one point on a main surface of the substrate 22 are collected. When the relative speed is controlled as described above, for example, when the vector of the relative speed of the upper surface plate 12 with respect to each position of the substrate 22 is collected for one rotation of the rotation of the substrate 22, the collected vector is It will be the same circle at any position. As a result, for example, when averaged over a period of one rotation of the substrate 22, the average relative speed is equal at each position on the substrate 22.
そのため、このように相対速度をコントロールすれば、例えば、基板２２に対する上定盤１２の相対速度を適切に均一化できる。また、相対速度を均一化することにより、例えば、基板２２の各部を通過する上定盤１２による研磨の軌跡密度を適切に均一化できる。また、これにより、例えば、研磨によって平坦度を悪化させることなく、基板２２の両主表面を適切かつ均一に研磨できる。 Therefore, if the relative speed is controlled in this way, for example, the relative speed of the upper surface plate 12 with respect to the substrate 22 can be appropriately equalized. Further, by making the relative speed uniform, for example, the trajectory density of polishing by the upper surface plate 12 passing through each part of the substrate 22 can be appropriately uniformized. Further, for example, both main surfaces of the substrate 22 can be properly and uniformly polished without deteriorating the flatness by polishing.
尚、本例において、両面研磨装置１０は、上定盤１２に形成された研磨液の供給穴から研磨液を供給しつつ、基板２２の両主表面の研磨を行う。そのため、基板２２を適切に研磨するためには、相対速度のコントロールにより基板２２の公転及び自転の軌跡を制御することに加え、研磨液の供給経路も重要となる。 In this example, the double-side polishing apparatus 10 polishes both main surfaces of the substrate 22 while supplying the polishing liquid from the polishing liquid supply hole formed on the upper surface plate 12. Therefore, in order to properly polish the substrate 22, in addition to controlling the trajectory of revolution and rotation of the substrate 22 by controlling the relative speed, the supply path of the polishing liquid is also important.
図６は、上定盤１２の構成の一例を示す図であり、上定盤１２に形成された研磨液供給穴の配置の一例を示す。本例において、上定盤１２の研磨面には、研磨液の供給穴が複数並ぶ列である供給穴列３０２が複数形成されている。そして、それぞれの供給穴列３０２において、供給穴は、上定盤１２の回転軸側から外側に、かつ上定盤１２の回転方向の進行側に向かって、螺旋状に等間隔で配置されている。 FIG. 6 is a diagram illustrating an example of the configuration of the upper surface plate 12, and illustrates an example of the arrangement of the polishing liquid supply holes formed in the upper surface plate 12. In this example, a plurality of supply hole rows 302, which is a row in which a plurality of supply holes for polishing liquid are arranged, are formed on the polishing surface of the upper surface plate 12. In each supply hole row 302, the supply holes are arranged at regular intervals in a spiral manner from the rotation axis side of the upper surface plate 12 to the outside and toward the traveling side in the rotation direction of the upper surface plate 12. Yes.
また、各供給穴列３０２の最も回転軸側の供給穴を最内周側穴３０４とし、最も外側の供給穴を最外周側穴３０６とした場合、各供給穴列３０２の最内周側穴３０４は、回転軸と同心円上に、かつ円周方向に等間隔で配置されている。更に、各供給穴列３０２の最外周側穴３０６は、当該供給穴列３０２に対して上定盤１２の回転方向側に隣接する別の供給穴列３０２の最内周側穴３０４よりも、上定盤２２の回転方向の進行側にある。 In addition, when the supply hole on the most rotating shaft side of each supply hole row 302 is the innermost peripheral hole 304 and the outermost supply hole is the outermost peripheral hole 306, the innermost peripheral hole of each supply hole row 302 304 are arranged concentrically with the rotation axis and at equal intervals in the circumferential direction. Furthermore, the outermost peripheral side hole 306 of each supply hole row 302 is more than the innermost peripheral side hole 304 of another supply hole row 302 adjacent to the supply hole row 302 on the rotation direction side of the upper surface plate 12. The upper surface plate 22 is on the traveling side in the rotational direction.
本例によれば、例えば、上定盤１２と下定盤１４との間において基板２２が通過する領域に対して、適切かつ均一に研磨液を供給できる。また、これにより、例えば、基板２２の両主表面をより適切かつ均一に研磨できる。 According to this example, for example, the polishing liquid can be appropriately and uniformly supplied to a region through which the substrate 22 passes between the upper surface plate 12 and the lower surface plate 14. Thereby, for example, both main surfaces of the substrate 22 can be more appropriately and uniformly polished.
尚、上記の構成は、均一に研磨液を供給するのに特に適した構成である。上定盤１２における研磨液供給穴の配置は、例えば必要な精度に応じて、上記と異なる配置とすることも考えられる。例えば、研磨液供給穴を、均一なランダム配置とすることも考えられる。 In addition, said structure is a structure especially suitable for supplying polishing liquid uniformly. The arrangement of the polishing liquid supply holes in the upper surface plate 12 may be different from the above, for example, depending on the required accuracy. For example, it is conceivable that the polishing liquid supply holes have a uniform random arrangement.
以上のように、本例によれば、例えば、主表面の平坦度が高いマスクブランク用基板を適切に製造できる。また、主表面の平坦度を高めることにより、欠陥の発生を適切に抑えることができる。これにより、例えば、欠陥サイズの微細化及び低欠陥化を適切に実現できる。 As described above, according to this example, for example, a mask blank substrate with a high flatness of the main surface can be appropriately manufactured. Further, by increasing the flatness of the main surface, it is possible to appropriately suppress the occurrence of defects. Thereby, for example, miniaturization of the defect size and reduction of the defect can be appropriately realized.
また、マスクブランク用基板の主表面上に、マスクパターン形成用の薄膜を形成してマスクブランクを製造することにより、例えば、高い精度で適切にマスクブランクを製造できる。更には、このマスクブランクにおける薄膜をパターニングしてマスクパターンを形成することにより、高い精度で適切にマスクを製造できる。 Moreover, a mask blank can be appropriately manufactured with high accuracy, for example, by manufacturing a mask blank by forming a thin film for forming a mask pattern on the main surface of the mask blank substrate. Furthermore, a mask can be appropriately manufactured with high accuracy by patterning the thin film in the mask blank to form a mask pattern.
ここで、本例のマスクブランク用基板の製造方法は、例えば、複数段階の研磨工程を備える。例えば、マスクブランク用基板の製造方法は、精密研磨工程及び超精密研磨工程を含む複数段階の研磨工程を備える。また、本例のマスクブランク用基板の製造方法は、例えば、精密研磨工程の前に、基板２２の形状を加工する研削工程や粗研磨工程等を更に備える。 Here, the manufacturing method of the mask blank substrate of the present example includes, for example, a multi-step polishing process. For example, the mask blank substrate manufacturing method includes a plurality of stages of polishing processes including a precision polishing process and an ultraprecision polishing process. Moreover, the manufacturing method of the mask blank substrate of the present example further includes, for example, a grinding process and a rough polishing process for processing the shape of the substrate 22 before the precision polishing process.
この場合、以上に説明した方法による基板２２の研磨は、例えば主表面に対する最終の研磨工程である超精密研磨工程において行うことが好ましい。超精密研磨工程は、例えば、コロイダルシリカ砥粒を含む研磨液を用いて研磨を行う工程である。このコロイダルシリカ砥粒は、例えば、有機ケイ素化合物を加水分解することで生成したコロイダルシリカを含む研磨砥粒である。 In this case, the polishing of the substrate 22 by the method described above is preferably performed, for example, in an ultraprecision polishing process that is a final polishing process for the main surface. The ultraprecision polishing step is a step of performing polishing using a polishing liquid containing colloidal silica abrasive grains, for example. This colloidal silica abrasive grain is an abrasive grain containing colloidal silica produced | generated by hydrolyzing an organosilicon compound, for example.
このようにすれば、例えば、基板の両主表面を、高い平坦度に適切に研磨できる。また、これにより、例えば、欠陥サイズの微細化及び低欠陥化をより適切に実現できる。 In this way, for example, both main surfaces of the substrate can be appropriately polished with high flatness. Thereby, for example, the defect size can be miniaturized and the defect can be reduced more appropriately.
また、超精密研磨工程より先に行われる研磨工程においては、例えば、上記と異なる方法により研磨を行ってもよい。例えば、精密研磨工程において、基板２２の自転回転数と公転回転数とを異ならせてもよい。この場合、例えば、上定盤１２、下定盤１４、太陽歯車１６、及び内歯歯車１８の回転数を異ならせて研磨を行うことが考えられる。また、例えば、更に、基板中心からオフセットした状態で研磨を行ってもよい。 Moreover, in the polishing process performed prior to the ultraprecision polishing process, for example, polishing may be performed by a method different from the above. For example, in the precision polishing step, the rotational speed and revolution speed of the substrate 22 may be made different. In this case, for example, it can be considered that the upper surface plate 12, the lower surface plate 14, the sun gear 16, and the internal gear 18 are subjected to polishing with different rotational speeds. Further, for example, polishing may be performed in a state offset from the center of the substrate.
また、この場合、上定盤１２、下定盤１４、太陽歯車１６、及び内歯歯車１８のそれぞれ又は一部の回転数を異ならせることにより、例えば、基板２２の主表面を均一に研磨するのではなく、例えば、中心領域又は周辺領域等の特定の領域を、他の領域よりも重点的に研磨できる。そのため、このようにすれば、例えば、超精密研磨を行う前に、基板２２の一部を強制的に加工して、基板２２の面内形状の創成を適切に行うことができる。また、その後に超精密研磨を行うことにより、基板２２の主表面の表面粗さを更に低減できる。
ＡｒＦ露光光用等の光透過型マスクの精密研磨工程や超精密研磨工程に本例を適用する場合において、薄膜を形成する側とは反対側の主表面については、薄膜を形成する側の主表面ほどの平坦度を要しないときには、その反対側の主表面側に研磨面を接する定盤の回転数を本例のように特に制御しなくてもよい。もとより、回転数を制御しない従来の製造方法でもある程度の主表面の平坦度は得られるからである。
Further, in this case, for example, the main surface of the substrate 22 is uniformly polished by changing the rotational speed of each of the upper surface plate 12, the lower surface plate 14, the sun gear 16, and the internal gear 18 or a part thereof. Instead, for example, a specific region such as a central region or a peripheral region can be polished more preferentially than other regions. Therefore, in this way, for example, before performing ultra-precision polishing, a part of the substrate 22 can be forcibly processed to create an in-plane shape of the substrate 22 appropriately. Moreover, the surface roughness of the main surface of the substrate 22 can be further reduced by performing ultra-precision polishing thereafter.
When this example is applied to a precision polishing process or an ultra-precision polishing process of a light transmission mask for ArF exposure light, etc., the main surface opposite to the side on which the thin film is formed is the main surface on the side on which the thin film is formed. When the flatness as much as the surface is not required, the rotational speed of the surface plate contacting the polishing surface to the opposite main surface side does not need to be particularly controlled as in this example. This is because a certain degree of flatness of the main surface can be obtained even by a conventional manufacturing method in which the rotational speed is not controlled.
尚、精密研磨工程は、超精密研磨工程の前段の研磨工程であり、例えば酸化セリウムを主材とする研磨液を用いて基板２２の両主表面を研磨することにより、使用する露光波長において要求されるマスクブランク用ガラス基板の表面粗さに応じて、基板２２の主表面を所定の表面粗さに仕上げる。具体的には、例えば、ＡｒＦエキシマレーザー露光用のマスクブランク用基板の場合、二乗平均平方根表面粗さ（ＲＭＳ）で０．２ｎｍ以下、ＥＵＶ反射型マスクブランク用の基板の場合、二乗平均平方根粗さ（ＲＭＳ）で０．１５ｎｍ以下に仕上げる。 The precision polishing process is a polishing process preceding the ultra-precision polishing process, and is required at the exposure wavelength to be used, for example, by polishing both main surfaces of the substrate 22 using a polishing liquid mainly composed of cerium oxide. The main surface of the substrate 22 is finished to a predetermined surface roughness according to the surface roughness of the mask blank glass substrate. Specifically, for example, in the case of a mask blank substrate for ArF excimer laser exposure, the root mean square surface roughness (RMS) is 0.2 nm or less, and in the case of a substrate for EUV reflective mask blank, the root mean square roughness (RMS) to 0.15 nm or less.
以下、実施例に基づいて本発明をより具体的に説明する。
（実施例１）
以下の工程により基板２２を加工して、実施例１に係るマスクブランク用基板を作製した。
Hereinafter, based on an Example, this invention is demonstrated more concretely.
Example 1
The substrate 22 was processed by the following steps to produce a mask blank substrate according to Example 1.
１）粗研磨工程
合成石英ガラス基板（１５２．４ｍｍ×１５２．４ｍｍ）の端面を面取加工、及び両面ラッピング装置によって研削加工を終えたガラス基板を、両面研磨装置に１０枚セットし、以下の研磨条件で粗研磨工程を行った。１０枚セットを１０回行い合計１００枚のガラス基板の粗研磨工程を行った。尚、加工荷重、研磨時間は適宜調整して行った。
研磨液：酸化セリウム（平均粒径２〜３μｍ）＋水
研磨パッド：硬質ポリシャ（ウレタンパッド）
粗研磨工程後、ガラス基板に付着した研磨砥粒を除去するため、ガラス基板を洗浄槽に浸漬（超音波印加）し、洗浄を行った。
1) Rough Polishing Step 10 glass substrates that have been finished with chamfering and grinding with a double-sided lapping machine on the end face of a synthetic quartz glass substrate (152.4 mm × 152.4 mm) are set in a double-sided polishing machine. The rough polishing process was performed under the polishing conditions. A set of 10 sheets was performed 10 times to perform a rough polishing step on a total of 100 glass substrates. The processing load and polishing time were adjusted as appropriate.
Polishing liquid: Cerium oxide (average particle size 2 to 3 μm) + water Polishing pad: Hard polisher (urethane pad)
After the rough polishing step, the glass substrate was immersed in a cleaning tank (ultrasonic application) in order to remove the abrasive grains adhering to the glass substrate and cleaned.
２）精密研磨工程
両面研磨装置に１０枚セットし、以下の研磨条件で精密研磨工程を行った。１０枚セットを１０回行い合計１００枚のガラス基板の精密研磨工程を行った。尚、加工荷重、研磨時間は適宜調整して行った。
研磨液：酸化セリウム（平均粒径１μｍ）＋水
研磨パッド：軟質ポリシャ（スウェードタイプ）
精密研磨工程後、ガラス基板に付着した研磨砥粒を除去するため、ガラス基板を洗浄槽に浸漬（超音波印加）し、洗浄を行った。
2) Precision polishing process Ten sheets were set in a double-side polishing apparatus, and a precision polishing process was performed under the following polishing conditions. A 10-sheet set was performed 10 times to perform a precision polishing step for a total of 100 glass substrates. The processing load and polishing time were adjusted as appropriate.
Polishing liquid: Cerium oxide (average particle size 1μm) + water Polishing pad: Soft polisher (suede type)
After the precision polishing step, in order to remove the abrasive grains adhering to the glass substrate, the glass substrate was immersed in a cleaning tank (ultrasonic application) and cleaned.
３）超精密研磨工程
両面研磨装置に１０枚セットし、以下の研磨条件で超精密研磨工程を行った。１０枚セットを１０回行い合計１００枚のガラス基板の超精密研磨工程を行った。尚、加工荷重、研磨時間は位相シフトマスクブランクに使用するガラス基板として必要な表面粗さ（所望の表面粗さ：二乗平均平方根粗さＲＭＳで０．２ｎｍ以下）となるように適宜調整して行った。但し、超精密研磨工程終了直前（即ち所望の表面粗さが得られる研磨時間が経過した後であって研磨定盤の回転停止直前）のガラス基板に対する加工圧力を１４４ｇ／ｃｍ２、この加工圧力のもとでの研磨時間を９０秒とした。
研磨液：アルカリ性（ｐＨ１０．５程度）コロイダルシリカ（平均粒径３０〜２００ｎｍ）＋水
研磨パッド：超軟質ポリシャ（スウェードタイプ）
超精密研磨工程後、ガラス基板に付着した研磨砥粒を除去するため、ガラス基板を、アルカリ水溶液を含む洗浄液が入った洗浄槽に浸漬（超音波印加）し、洗浄を行った。
3) Ultra-precision polishing process Ten sheets were set in a double-side polishing apparatus, and an ultra-precision polishing process was performed under the following polishing conditions. A 10-sheet set was performed 10 times to perform a super-precision polishing step on a total of 100 glass substrates. The processing load and polishing time are appropriately adjusted so that the surface roughness necessary for the glass substrate used for the phase shift mask blank (desired surface roughness: root mean square roughness RMS is 0.2 nm or less). went. However, the processing pressure on the glass substrate immediately before the end of the ultraprecision polishing process (that is, after the polishing time for obtaining the desired surface roughness has elapsed and immediately before the rotation of the polishing platen) is 144 g / cm 2 , and this processing pressure The polishing time under the condition was 90 seconds.
Polishing liquid: Alkaline (about pH 10.5) colloidal silica (average particle size 30 to 200 nm) + water Polishing pad: Super soft polisher (suede type)
After the ultraprecision polishing step, in order to remove the abrasive grains adhering to the glass substrate, the glass substrate was immersed in a cleaning tank containing a cleaning solution containing an alkaline aqueous solution (applied with ultrasonic waves) for cleaning.
ここで、実施例１において、超精密研磨工程を行う両面研磨装置としては、図１〜図６を用いて説明した両面研磨装置１０を用いた。また、上定盤１２、下定盤１４の単位時間当たりの回転数を設定し、さらに、キャリア２０（基板２２）の上定盤１２、下定盤１４に対する単位時間当たりの相対的な公転回転数と、キャリア２０（基板２２）の単位時間当たりの自転回転数が等しくなるように調整した。 Here, in Example 1, the double-side polishing apparatus 10 described with reference to FIGS. 1 to 6 was used as the double-side polishing apparatus that performs the ultraprecision polishing process. Moreover, the rotation speed per unit time of the upper surface plate 12 and the lower surface plate 14 is set, and the relative revolution speed per unit time with respect to the upper surface plate 12 and the lower surface plate 14 of the carrier 20 (substrate 22) and The carrier 20 (substrate 22) was adjusted to have the same rotation speed per unit time.
図７は、実施例１の超精密研磨工程において上定盤１２の研磨液供給穴から供給される研磨液の軌跡の一例を示す。研磨液の軌跡とは、例えば、各研磨液供給穴が基板２２の主表面の各部を通過する軌跡である。 FIG. 7 shows an example of the locus of the polishing liquid supplied from the polishing liquid supply hole of the upper surface plate 12 in the ultraprecision polishing process of the first embodiment. The locus of the polishing liquid is, for example, a locus through which each polishing liquid supply hole passes through each part of the main surface of the substrate 22.
例えば、図６に示す配置のように、均一な分布で研磨液供給穴が形成されている場合、基板２２の自転回転数と相対公転回転数とを等しくすると、研磨液の軌跡は、例えば、図７に示すように、研磨液の軌跡が集中している部分は、基板の外側のエリアになっている。研磨液が供給される軌跡が基板主表面内で集中すると、その部分に研磨液が多く供給されるため、優先的に研磨されてしまう。この実施例１の超精密研磨工程では、基板２２の主表面の全体に均一に研磨液が供給されることとなる。この観点からも、主表面を適切にかつ均一に研磨することが可能になる。 For example, when the polishing liquid supply holes are formed with a uniform distribution as in the arrangement shown in FIG. 6, if the rotation speed of the substrate 22 is equal to the relative revolution speed, the locus of the polishing liquid is, for example, As shown in FIG. 7, the portion where the locus of the polishing liquid is concentrated is an area outside the substrate. When the locus of supplying the polishing liquid is concentrated in the main surface of the substrate, a large amount of polishing liquid is supplied to that portion, so that polishing is preferentially performed. In the ultraprecision polishing process of the first embodiment, the polishing liquid is uniformly supplied to the entire main surface of the substrate 22. Also from this viewpoint, it is possible to polish the main surface appropriately and uniformly.
（比較例１）
超精密研磨工程における基板２２の相対公転回転数と自転回転数との比が１：０．５となるように、上定盤１２、下定盤１４、太陽歯車１６、及び内歯歯車１８の回転数を設定し、基板２２の自転回転数と相対公転回転数とを異ならせた以外は実施例１と同様にして、比較例１に係るマスクブランク用基板を作製した。
(Comparative Example 1)
The rotation of the upper surface plate 12, the lower surface plate 14, the sun gear 16, and the internal gear 18 so that the ratio of the relative revolution speed and the rotational speed of the substrate 22 in the ultra-precision polishing process is 1: 0.5. A mask blank substrate according to Comparative Example 1 was fabricated in the same manner as in Example 1 except that the number was set and the rotation speed and relative revolution speed of the substrate 22 were varied.
先の図４に示したように、定盤が１回転した時点での基板の研磨軌跡が偏っており、トータルの研磨面の通過速度にばらつきが生じており、研磨量が均一にならない。また、基板の研磨軌跡が偏っていることから、研磨液の軌跡も偏っており、基板主表面上の研磨液の供給量分布にも、供給量が多い部分と少ない部分との偏りが発生してしまい。主表面を高い歩留りで適切にかつ均一に研磨することは難しい。 As shown in FIG. 4 above, the polishing trajectory of the substrate at the time when the surface plate makes one rotation is biased, the total passing speed of the polishing surface varies, and the polishing amount is not uniform. Also, since the polishing locus of the substrate is biased, the locus of the polishing liquid is also biased, and the supply amount distribution of the polishing liquid on the main surface of the substrate has a deviation between the portion with a large supply amount and the portion with a small supply amount. End. It is difficult to properly and uniformly polish the main surface with a high yield.
（評価）
実施例１及び比較例１に係るマスクブランク用基板に対し、公知の欠陥検査装置を用いて、平坦度及び欠陥の検査を行った。この検査では、例えばｈｐ３２世代で要求される精度に基づき、平坦度について、例えば、マスクパターン形成用の薄膜が形成される側の主表面の平坦度が０．５μｍ以下、その裏面の平坦度が１．０μｍ以下である場合に合格とした。この平坦度は、例えば、主表面における高さが最大の箇所と最小の箇所との間の高低差である。また、欠陥について、０．３μｍ以上のサイズの欠陥がない場合を合格とした。
(Evaluation)
The mask blank substrate according to Example 1 and Comparative Example 1 was inspected for flatness and defects using a known defect inspection apparatus. In this inspection, for example, the flatness of the main surface on the side where the thin film for forming the mask pattern is formed is 0.5 μm or less and the flatness of the back surface thereof is based on the accuracy required in the hp32 generation. When it was 1.0 μm or less, it was regarded as acceptable. This flatness is, for example, a difference in height between the place with the highest height and the place with the smallest height on the main surface. Moreover, about the defect, the case where there was no defect of the size of 0.3 micrometer or more was set as the pass.
検査の結果、実施例１に係るマスクブランク用基板は、全数が合格であった。一方、比較例１に係るマスクブランク用基板については、平坦度について一部が不合格となり、合格率は約８０％となった。これは、比較例１において、基板２２の主表面の中央部分を強制的に研磨したことにより、超精密研磨により却って平坦度が悪化したためであると考えられる。以上の結果から、実施例１の超精密研磨において、より均一な研磨を実現できていることがわかる。 As a result of the inspection, all the mask blank substrates according to Example 1 were acceptable. On the other hand, with respect to the mask blank substrate according to Comparative Example 1, part of the flatness was rejected, and the pass rate was about 80%. This is considered to be because in the first comparative example, the central portion of the main surface of the substrate 22 was forcibly polished, so that the flatness deteriorated due to the ultraprecision polishing. From the above results, it can be seen that more uniform polishing can be realized in the ultraprecision polishing of Example 1.
以上、本発明について実施形態を用いて説明したが、本発明の技術的範囲は上記実施形態に記載の範囲には限定されない。上記実施形態に、多様な変更又は改良を加えることが可能であることが当業者に明らかである。その様な変更又は改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。 As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above embodiment. It is apparent from the description of the scope of claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.
本発明は、例えばマスクブランク用基板の製造方法に好適に利用できる。 The present invention can be suitably used for, for example, a method for manufacturing a mask blank substrate.
１０・・・両面研磨装置、１２・・・上定盤、１４・・・下定盤、１６・・・太陽歯車、１８・・・内歯歯車、２０・・・キャリア、２２・・・基板、２４・・・研磨パッド、１０２・・・定盤中心軸、１０４・・・キャリア中心軸、２０２・・・矢印、２０４・・・矢印、２０６・・・矢印、２０８・・・領域、３０２・・・供給穴列、３０４・・・最内周側穴、３０６・・・最外周側穴 DESCRIPTION OF SYMBOLS 10 ... Double-side polish apparatus, 12 ... Upper surface plate, 14 ... Lower surface plate, 16 ... Sun gear, 18 ... Internal gear, 20 ... Carrier, 22 ... Substrate, 24 ... Polishing pad, 102 ... Center plate center axis, 104 ... Carrier center axis, 202 ... Arrow, 204 ... Arrow, 206 ... Arrow, 208 ... Region, 302 ..Supply hole array, 304 ... innermost hole, 306 ... outermost hole
Claims (9)
前記研磨工程は、
上下両定盤を同心の回転軸で回転させ、
１枚の基板を保持したキャリアを研磨面上の定盤の回転軸からずらした位置に配置して、研磨面上で基板を定盤の回転軸を中心に相対的に公転させ、
基板主表面の中心を回転軸としてキャリアを上下両定盤と同じ方向に回転させて、基板を研磨面上で自転させ、
基板の自転回転数と公転回転数が等しくなる条件で基板の両主表面を研磨するものであり、
前記上定盤の研磨面には、研磨液の供給穴が複数並ぶ列である供給穴列が複数形成されており、
前記供給穴列の供給穴は、前記上定盤の回転軸側から外側に、かつ上定盤の回転方向の進行側に向かって螺旋状に等間隔で配置されており、
各供給穴列の最も回転軸側の供給穴は、回転軸と同心円上に、かつ円周方向に等間隔で配置されている
ことを特徴とするマスクブランク用基板の製造方法。 A mask blank substrate manufacturing method comprising a polishing step of sandwiching a substrate held by a carrier between upper and lower surface plates of a double-side polishing apparatus and polishing both main surfaces of the substrate while supplying a polishing liquid. And
The polishing step includes
Rotate both upper and lower surface plates with concentric rotation shafts,
The carrier holding one substrate is placed at a position shifted from the rotation axis of the surface plate on the polishing surface, and the substrate is revolved relatively around the rotation axis of the surface plate on the polishing surface.
Rotate the carrier on the polishing surface by rotating the carrier in the same direction as the upper and lower surface plates with the center of the substrate main surface as the rotation axis ,
Both main surfaces of the substrate are polished under the condition that the rotation speed and revolution speed of the substrate are equal .
The polishing surface of the upper surface plate is formed with a plurality of supply hole rows, which are rows in which a plurality of supply holes for the polishing liquid are arranged,
The supply holes of the supply hole row are arranged at equal intervals in a spiral from the rotation axis side of the upper surface plate to the outside and toward the traveling side in the rotation direction of the upper surface plate,
The method for manufacturing a mask blank substrate, characterized in that the supply holes on the most rotation axis side of each supply hole row are arranged concentrically with the rotation axis and at equal intervals in the circumferential direction .
両面研磨装置には、
定盤中心部に設けられた空洞に、定盤の回転軸と同心の回転軸で回転する太陽歯車を備えられ、
定盤の外周に、リング状で内側に歯車を有し、定盤の回転軸と同心の回転軸で回転する内歯歯車を備えられており、
太陽歯車と内歯歯車がキャリアの歯車と噛み合うことによってキャリアを回転させる
ことを特徴とする請求項１または２のいずれかに記載のマスクブランク用基板の製造方法。 The carrier has gears on the outer periphery,
Double-side polishing equipment
In a cavity provided in the center of the surface plate, a sun gear that rotates on a rotation axis concentric with the rotation axis of the surface plate is provided,
On the outer periphery of the surface plate, there is a ring-shaped inner gear, and an internal gear that rotates on a rotation axis concentric with the rotation axis of the surface plate is provided.
3. The method of manufacturing a mask blank substrate according to claim 1, wherein the sun gear and the internal gear are engaged with the carrier gear to rotate the carrier.
ことを特徴とする請求項３に記載のマスクブランク用基板の製造方法。 The mask blank according to claim 3, wherein the rotational speed of the substrate and the revolution speed of the substrate are controlled to be equal by adjusting the rotational speeds of the upper and lower surface plates, the sun gear, and the internal gear. Manufacturing method for industrial use.
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