JP5373782B2 - ナノワイヤフォトダイオード及びナノワイヤフォトダイオードを作製する方法 - Google Patents
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
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- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
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Description
Claims (15)
- 第1の先端を含むテーパ状の第1の端部を備える第1の光導波路であって、前記第1の先端は、p型半導体材料もしくはn型半導体材料でドーピングされているか、または、p型半導体材料もしくはn型半導体材料で被覆されている、第1の光導波路と、
前記第1の先端から離間された第2の先端を含むテーパ状の第2の端部を備える第2の光導波路であって、前記第1の先端がp型半導体材料でドーピングまたは被覆されているときには、前記第2の先端はn型半導体材料でドーピングまたは被覆され、前記第1の先端がn型半導体材料でドーピングまたは被覆されているときには、前記第2の先端はp型半導体材料でドーピングまたは被覆されている、第2の光導波路と、
前記第1の先端と前記第2の先端とをブリッジ構成で接続する、i半導体材料から形成された少なくとも1本のナノワイヤとを備え、
前記第1の先端と前記ナノワイヤと前記第2の先端とによってp−i−n接合が形成される、ナノワイヤフォトダイオード。 - 前記ナノワイヤは、0.5μmから5μmの長さ及び10nmから500nmの直径を有し、
前記第1の先端及び前記第2の先端は、前記ナノワイヤの前記直径とほぼ等しい幅又は直径を有する、請求項1に記載のナノワイヤフォトダイオード。 - 前記p型半導体材料及び前記n型半導体材料は、多結晶シリコン、アモルファスシリコン、微結晶シリコン、ダイヤモンド、又はダイヤモンド状炭素である、請求項1または2に記載のナノワイヤフォトダイオード。
- 前記ナノワイヤは、少なくとも1つのIII−V族化合物半導体材料を含む、請求項1乃至3のいずれかに記載のナノワイヤフォトダイオード。
- 表面を有する基板をさらに備え、
前記第1の光導波路は、前記基板の前記表面上又は前記表面内に一体的に製造され、
前記第2の光導波路は、前記基板の前記表面上又は前記表面内に一体的に製造され、
前記第1の光導波路及び前記第2の光導波路は、前記基板の前記表面と同じ材料を含む、請求項1乃至4のいずれかに記載のナノワイヤフォトダイオード。 - 前記基板の前記表面並びに前記第1の光導波路及び前記第2の光導波路は、第2の半導体材料を含み、
前記第2の半導体材料は、非単結晶材料であり、
前記第1の光導波路及び前記第2の光導波路は、前記基板上で互いに電気的に絶縁される、請求項5に記載のナノワイヤフォトダイオード。 - 前記基板の前記表面並びに前記第1の光導波路及び前記第2の光導波路は、誘電体材料を含む、請求項5に記載のナノワイヤフォトダイオード。
- 前記ナノワイヤフォトダイオードは、1フェムトファラッド未満のキャパシタンス及び少なくとも10%の外部量子効率を有する、請求項1乃至7のいずれかに記載のナノワイヤフォトダイオード。
- 前記テーパ状の第1の端部及び前記テーパ状の第2の端部は、3度未満のテーパを有する、請求項1乃至8のいずれかに記載のナノワイヤフォトダイオード。
- 前記第1の光導波路は、第1のブラッグ反射器を含み、
前記第2の光導波路は、第2のブラッグ反射器を含み、
前記第1のブラッグ反射器及び前記第2のブラッグ反射器は、前記ナノワイヤを含む光キャビティを規定する、請求項1乃至9のいずれかに記載のナノワイヤフォトダイオード。 - 請求項1乃至10のいずれかに記載のナノワイヤフォトダイオードを製造する方法であって、
前記少なくとも1本のナノワイヤを、前記第1の光導波路の前記テーパ状の前記第1の端部の前記第1の先端から成長させることを含み、これによって、前記第1の先端から離間した前記第2の光導波路の前記テーパ状の第2の端部の前記第2の先端に前記ナノワイヤがブリッジ構成で接続し、及び、前記第1の先端と前記ナノワイヤと前記第2の先端とによってp−i−n接合が形成される、ナノワイヤフォトダイオードを製造する方法。 - 前記第1の光導波路内に前記第1のブラッグ反射器を形成し、
前記第2の光導波路内に前記第2のブラッグ反射器を形成することをさらに含み、
前記第1のブラッグ反射器及び前記第2のブラッグ反射器は、前記ナノワイヤを含む光キャビティを規定する、請求項11に記載の方法。 - 前記第1の光導波路及び前記第2の光導波路を基板上に配置し、
p型半導体材料又はn型半導体材料で前記第1の先端をドーピング又は被覆し、
p型半導体材料又はn型半導体材料の他方で前記第2の先端をドーピング又は被覆し、
前記第2の先端に接続し、及び、前記第1の先端と前記ナノワイヤと前記第2の先端とによってp−i−n接合が形成されるようにするために、前記第1の先端から前記ナノワイヤを成長させることをさらに含む、請求項11または12に記載の方法。 - 基板の表面上又は前記表面内に前記第1の光導波路を形成するために、前記基板の前記表面をエッチングし、
前記基板の表面上又は前記表面内に前記第2の光導波路を形成するために、前記基板の前記表面をエッチングし、
p型半導体材料又はn型半導体材料で前記第1の先端をドーピング又は被覆し、
p型半導体材料又はn型半導体材料の他方で前記第2の先端をドーピング又は被覆し、
前記第2の先端にブリッジ構成で接続し、及び、前記第1の先端と前記ナノワイヤと前記第2の先端とによってp−i−n接合が形成されるようにするために、前記第1の先端から前記ナノワイヤを成長させることをさらに含む、請求項11または12に記載の方法。 - a)前記基板の前記表面並びに前記第1の光導波路及び前記第2の光導波路は、第2の半導体材料を含み、
前記方法は、前記第1の光導波路と前記第2の光導波路とを互いに電気的に絶縁する電気絶縁領域を前記基板内に形成することをさらに含むか、又は、
b)前記基板の前記表面並びに前記第1の光導波路及び前記第2の光導波路は、誘電体材料を含み、
前記方法は、
p型半導体材料若しくはn型半導体材料で前記第1の先端を被覆し、
p型半導体材料若しくはn型半導体材料の他方で前記第2の先端を被覆することをさらに含む、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/819,226 US7663202B2 (en) | 2007-06-26 | 2007-06-26 | Nanowire photodiodes and methods of making nanowire photodiodes |
US11/819,226 | 2007-06-26 | ||
PCT/US2008/007931 WO2009023065A2 (en) | 2007-06-26 | 2008-06-25 | Nanowire photodiodes and methods of making nanowire photodiodes |
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JP2010532093A JP2010532093A (ja) | 2010-09-30 |
JP5373782B2 true JP5373782B2 (ja) | 2013-12-18 |
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JP (1) | JP5373782B2 (ja) |
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CN (1) | CN101689581B (ja) |
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WO (1) | WO2009023065A2 (ja) |
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US8519379B2 (en) * | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
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WO2016003884A1 (en) | 2014-06-30 | 2016-01-07 | Cooper Tire & Rubber Company | Modified fillers for rubber compounding and masterbatches derived therefrom |
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CN101689581B (zh) | 2011-04-06 |
KR20100022997A (ko) | 2010-03-03 |
DE112008001351B4 (de) | 2015-08-20 |
WO2009023065A2 (en) | 2009-02-19 |
WO2009023065A3 (en) | 2009-08-06 |
US7663202B2 (en) | 2010-02-16 |
JP2010532093A (ja) | 2010-09-30 |
DE112008001351T5 (de) | 2010-05-06 |
US20090001498A1 (en) | 2009-01-01 |
CN101689581A (zh) | 2010-03-31 |
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