JP5367877B2 - MEMS pressure sensor - Google Patents

Description

Embodiments of the present invention relate to MEMS pressure sensors .

It is required in the field of non-disease medical care to perform continuous blood pressure measurement without load while performing daily life. In order to make this possible, it is necessary to realize blood pressure measurement with a small size such as an adhesive bandage type and sufficient measurement accuracy.

A cuff type is known as a blood pressure measurement. In the cuff type, blood pressure is measured by temporarily stopping the blood flow by applying a strong pressure to the arms and fingers. For this reason, continuous measurement is difficult. Further, since a mechanism for applying a strong pressure is required, it is difficult to reduce the size.

A tonometry method is known as a blood pressure measurement capable of continuous measurement. In the tonometry method, blood pressure is measured by contacting a human body with a sensor to sense skin distortion due to intra-arterial pressure.

MEMS (Micro Electro Mechanical) as a tonometry method
(System) Devices utilizing pressure sensors have been commercialized. In this product, a thin portion is provided on the Si substrate, and the thin portion is distorted by fluctuations in the arterial pressure. Blood pressure is measured using the change in electrical resistance due to this strain.

JP 2002-148132 A

G. Pressman, P. Newgard: “A transducer for continuous external measurement of arterial blood pressure”, IEEE Trans Biomed Electro 10 73 (1963). M. Lohndorf et al., “Highly sensitive strain sensors based on magnetic tunneling junctions” J. Magn. Magn. Mater. 316, e223 (2007) D. Meyners et al., “Characterization of magnetostrictive TMR pressure sensors by MOKE”, J. Appl. Phys. 105, 07C914 (2009)

However, in the tonometry method, if the sensor is not ideally in contact with the human body over a wide range, the sensitivity of distortion is reduced. In such a case, it is difficult to continuously measure blood pressure during daily life.

Then, an object of this invention is to provide the MEMS pressure sensor which can perform a pressure measurement continuously with high sensitivity.

MEMS pressure sensor according to one embodiment of the present invention comprises a first region that is supported by the support member, the second region tensile stress in the first direction by bent there inside said first region a substrate having said a second magnetoresistance device provided in a partial region, the magnetoresistive effect element includes a first electrode provided on the substrate, the first on the electrode A magnetization pinned layer whose magnetization is directed in one direction, a nonmagnetic layer provided on the magnetization pinned layer, and a region on the nonmagnetic layer and corresponding to the magnetization pinned layer. A first magnetization free layer having a variable magnetization and oriented in a direction different from both the first direction and the second direction perpendicular to the first direction; and the first magnetization free layer And a second electrode provided on the top.

The figure using the blood-pressure sensor which concerns on the 1st Embodiment of this invention. The figure which shows the blood pressure sensor which concerns on 1st Embodiment. The figure which shows the blood pressure sensor which concerns on 1st Embodiment. The figure which shows the blood pressure sensor which concerns on 1st Embodiment. The figure which shows the blood pressure sensor which concerns on 1st Embodiment. The figure which shows the blood pressure sensor which concerns on 1st Embodiment. The figure which shows the blood pressure sensor which concerns on 1st Embodiment. The figure explaining the maximum blood pressure and the minimum blood pressure. The figure which shows the direction of magnetization of a magnetization free layer, and a blood flow direction. The figure which shows the modification of MR element. The figure which shows the modification of MR element. The figure which shows the modification of MR element. The figure which shows the modification of MR element. The figure which shows the modification of MR element. The figure which shows the modification of MR element. The figure which shows the blood pressure sensor which concerns on the 2nd Embodiment of this invention. The figure for demonstrating the principle of operation of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the modification of the blood pressure sensor which concerns on 2nd Embodiment. The figure which shows the blood pressure sensor which concerns on the 3rd Embodiment of this invention. The figure which shows the modification of the blood pressure sensor which concerns on 3rd Embodiment. The figure which shows the blood pressure sensor which concerns on the 4th Embodiment of this invention. The figure which shows the measurement result of the electrical resistance with respect to the external magnetic field of MR element. The figure which shows the measurement result of the electrical resistance with respect to distortion of MR element. The figure explaining the application direction of distortion. The figure explaining the blood-pressure measurement system which concerns on the 5th Embodiment of this invention. The figure explaining the blood-pressure measurement system which concerns on 5th Embodiment. The figure explaining the blood-pressure measurement system which concerns on 5th Embodiment. The figure explaining the blood-pressure measurement system which concerns on 5th Embodiment. The figure explaining the blood-pressure measurement system which concerns on 5th Embodiment.

Embodiments of the present invention will be described below with reference to the drawings. The same reference numerals denote the same items. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio coefficient of the size between the parts, and the like are not necessarily the same as actual ones. Also,
Even in the case of representing the same part, the dimensions and ratio coefficient may be represented differently depending on the drawings.
(First embodiment)

FIG. 1 is a diagram using a blood pressure sensor 10 according to the first embodiment.

The blood pressure sensor 10 is provided at a blood pressure measurement site, and is provided in a part of a shape such as a bandage to adhere to the skin surface. That is, the blood pressure sensor 10 is disposed so as to contact the skin. The blood pressure sensor 10 is disposed directly under the skin where arterial blood vessels are present. The direction perpendicular to the paper surface is the direction of blood flow. The blood flow direction indicates the direction in which the blood vessel extends. If there are no arterial blood vessels near the skin surface, blood pressure measurement becomes difficult. The parts (and arteries below the body surface) where pulsation can be detected from the body surface are as follows.

The medial biceps sulcus (brachial artery), between the radial carpal flexor tendon and brachial peroneal tendon at the outer lower end of the forearm (radial artery), between the ulnar carpal flexor tendon and the superficial digital flexor tendon (Ulnar artery), ulnar side of the long extensor tendon (first dorsal metacarpal artery), axilla (axillary artery), femoral triangle (femoral artery), outside the front tibialis tendon at the lower front of the lower leg (Anterior tibial artery), posterior lower part of the internal capsule (posterior tibial artery), outer side of long thumb extensor tendon (foot dorsal artery), carotid artery triangle (common carotid artery), front of masseter stop (facial artery), thoracic chain Between the papillary muscle stop and the start of the trapezius muscle (occipital artery) and before the ear canal (superficial temporal artery). Therefore, the place where the blood pressure sensor 10 is arranged is the above-described part. That is, these correspond to blood pressure measurement sites. The blood pressure sensor 10 is attached to the skin surface at these locations.

As shown in FIG. 1, when the blood vessel expands in the radial direction, the skin is pushed up and works as blood pressure. At this time, the skin receives a tensile stress in a direction perpendicular to the direction in which the blood pressure works. At the same time, the blood pressure sensor 10 also works in one direction (first direction) where there is a tensile stress.

FIG. 2 is a diagram illustrating the blood pressure sensor 10.

In the blood pressure sensor 10, an electrode 30 is provided on a substrate 20, and a magnetization fixed layer 40 whose magnetization is directed in one direction is provided on the electrode 30. A nonmagnetic layer 50 is provided on the magnetization pinned layer 40, and a magnetization free layer 60 having a variable magnetization direction is provided on the nonmagnetic layer 50. An electrode 70 is provided on the magnetization free layer 60. The arrangement of the magnetization pinned layer 40 and the magnetization free layer 60 may be switched. The magnetization pinned layer 40 and the magnetization free layer 60 are ferromagnetic materials. A configuration including the electrode 30, the magnetization fixed layer 40, the nonmagnetic layer 50, the magnetization free layer 60, and the electrode 70 is referred to as a magnetoresistive effect element (hereinafter referred to as an MR element) 15. MR element obtained by removing electrodes 30 and 70 from MR element
It is called a membrane. An insulating layer such as aluminum oxide may be provided between the substrate 20 and the electrode 30.

A material such as an insulator or a semiconductor can be used for the substrate 20. As the material of the insulator, for example, a plastic material such as polyimide can be used. As the semiconductor material, for example, silicon can be used.

The magnetization pinned layer 40 is a ferromagnetic material. As a material of the magnetization fixed layer 40, for example, an FeCo alloy, a CoFeB alloy, a NiFe alloy, or the like can be used. The thickness of the magnetization pinned layer 40 is
For example, it is 2 nm to 6 nm.

The nonmagnetic layer 50 can use a metal or an insulator. Examples of the metal include Cu,
Au, Ag, or the like can be used. In the case of metal, the film thickness of the nonmagnetic layer 50 is, for example, 1 nm.
~ 7nm. As the insulator, for example, magnesium oxide (such as MgO), aluminum oxide (such as Al ₂ O ₃ ), titanium oxide (such as TiO), or zinc oxide (such as ZnO) can be used. In the case of an insulator, the film thickness of the nonmagnetic layer 50 is, for example, 0.6 nm to 2.5 nm.

The magnetization free layer 60 is a ferromagnetic material. As a material of the magnetization free layer 60, for example, an FeCo alloy, a NiFe alloy, or the like can be used. In addition, Fe—Co—Si—B alloy, λs>
Tb-M-Fe alloy showing 100 ppm (M is Sm, Eu, Gd, Dy, Ho, Er)
Tb-M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3 -M4-B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr
, Nd, Sm, Tb, Dy, Er), Ni, Al—Fe, and ferrite (Fe ₃ O ₄ , (F
eCo) ₃ O ₄ ) and the like. The film thickness of the magnetization free layer 60 is, for example, 2n
m or more.

The magnetization free layer 60 may have a two-layer structure. In this case, an FeCo alloy is laminated, and then F
e-Co-Si-B alloy, Tb-M-Fe alloy showing λs> 100 ppm (M is Sm,
Eu, Gd, Dy, Ho, Er), Tb-M1-Fe-M2 alloy (M1 is Sm, Eu,
Gd, Dy, Ho, Er, M2 are Ti, Cr, Mn, Co, Cu, Nb, Mo, W, T
a), Fe-M3-M4-B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo)
, W, Ta, M4 are Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al—Fe.
Or a material selected from ferrite (Fe ₃ O ₄ , (FeCo) ₃ O ₄ ), etc.) is laminated.

For the electrodes 30 and 70, for example, a non-magnetic material such as Au, Cu, Ta, or Al can be used. In addition, by using a soft magnetic material for the electrodes 30 and 70, external magnetic noise affecting the MR element 15 can be reduced. For example, permalloy (NiFe alloy) or silicon steel (FeSi alloy) can be used as the soft magnetic material. The MR element 15 is covered with an insulator such as aluminum oxide (eg, Al ₂ O ₃ ) or silicon oxide (eg, SiO ₂ ) (not shown) so that the electrodes 30 and 70 are not electrically short-circuited. .

Next, the operation principle of the blood pressure sensor 10 will be described.

The blood pressure sensor 10 includes a “reverse magnetostrictive effect” of a ferromagnetic material, a magnetization pinned layer 40, and a nonmagnetic layer 50.
, And the “MR effect” that appears in the laminated film of the magnetization free layer 60.

The “inverse magnetostriction effect” and “MR effect” using a part of the blood pressure sensor 10 will be described. "M
The “R effect” refers to the change in the relative angle of the magnetization direction using the electrode 30 and the electrode 70 and the magnetization pinned layer 4.
0, the nonmagnetic layer 50, and the magnetization free layer 60 are expressed as a change in electrical resistance when energized in the stacking direction. That is, if the magnetization direction of the magnetization free layer 60 is different from the direction of the tensile stress, the MR effect can be exhibited by the inverse magnetostriction effect. The amount of electrical resistance that changes due to the MR effect is referred to as “MR change amount”, and the MR change amount divided by the electrical resistance value is referred to as “MR change rate”.

FIG. 3 is a diagram illustrating the relationship between the magnetization direction of the magnetization pinned layer 40 and the magnetization free layer 60 and the direction of tensile stress. In FIG. 3, a magnetization pinned layer 40, a nonmagnetic layer 50, and a magnetization free layer 60 are shown.

FIG. 3A shows a state where no tensile stress is applied. The magnetization direction of the magnetization pinned layer 40 and the magnetization direction of the magnetization free layer 60 are in the same direction.

FIG. 3B shows a state in which a tensile stress is applied. The blood flow direction is also shown. The direction of blood flow and the direction in which tensile stress acts are orthogonal. The tensile stress is applied in a direction orthogonal to the magnetization directions of the magnetization pinned layer 40 and the magnetization free layer 60. At this time, the magnetization of the magnetization free layer 60 rotates so as to be in the same direction as the direction in which the tensile stress is applied. This is called “reverse magnetostriction effect”. Further, the magnetization of the magnetization pinned layer 40 is pinned in one direction. Therefore, the rotation of the magnetization of the magnetization free layer 60 changes the relative angle between the magnetization direction of the magnetization pinned layer 40 and the magnetization direction of the magnetization free layer 60. The magnetization direction of the magnetization pinned layer 40 is described as an example, and does not necessarily have to be the same direction as in the drawing.

In the inverse magnetostriction effect, the easy axis of magnetization changes depending on the sign of the magnetostriction constant of the ferromagnetic material. Many materials exhibiting a large inverse magnetostriction effect have a positive sign for the magnetostriction constant. When the magnetostriction constant has a positive sign, the direction in which the tensile stress acts as described above is the easy magnetization axis. That is, the magnetization free layer 60
Will rotate in the direction of the easy axis of magnetization.

Therefore, when the magnetostriction constant of the magnetization free layer 60 has a positive sign, the magnetization direction of the magnetization free layer 60 needs to be directed in a direction different from the direction in which the tensile stress acts.

When the magnetostriction constant has a negative sign, the direction perpendicular to the direction in which the tensile stress acts is the easy axis of magnetization. This is shown in FIG. When the magnetostriction constant has a negative sign, the magnetization direction of the magnetization free layer 60 needs to be directed in a direction different from the direction perpendicular to the direction in which the tensile stress acts. The magnetization direction of the magnetization pinned layer 40 is described as an example, and does not necessarily have to be the same direction as in the drawing.

FIG. 3 (D) is a diagram showing a case where the sign of the magnetostriction constant is positive and negative. The same direction or a direction perpendicular to the direction of blood flow coincides with the easy axis of magnetization.

FIG. 3E is a diagram showing the magnitude of energy based on the angle formed by the magnetization direction of the magnetization free layer 60 and the blood flow direction of the blood vessel and the inverse magnetostriction effect. The angle between the magnetization direction of the magnetization free layer 60 and the blood flow direction is θ (deg. Deg is equivalent to “°”). The vertical axis is energy and the horizontal axis is θ. The angle θ at which the energy is minimum corresponds to the easy magnetization axis. The angle θ at which the energy is maximum is the hard axis. The magnetization difficult axis means an axis in which the magnetization of the magnetization free layer 60 is difficult to face.

The relative change amount of the angle formed by the magnetization direction of the magnetization pinned layer 40 and the magnetization direction of the magnetization free layer 60 is referred to as an MR change amount.

The MR change amount increases as the angle between the magnetization direction of the magnetization pinned layer 40 and the magnetization direction of the magnetization free layer 60 increases. Therefore, the magnetization free layer 6 in a state where no tensile stress is applied.
When the magnetization of 0 is directed to the hard axis, the MR variation is maximized.

The magnetization of the magnetization free layer 60 rotates to the left or right. The probability of rotating counterclockwise and the probability of rotating clockwise are considered to be comparable. In this case, the MR change amount substantially takes two values. For this reason, the magnetization of the magnetization free layer 60 is slightly tilted from the magnetization difficult axis. That is,
When the magnetostriction constant of the magnetization free layer 60 has a positive sign, the magnetization direction of the magnetization free layer 60 is prevented from being parallel to the blood flow direction. When the magnetostriction constant of the magnetization free layer 60 has a negative sign, the magnetization direction of the magnetization free layer 60 is prevented from being perpendicular to the blood flow direction.

That is, in a state where no tensile stress is applied, the magnetization direction of the magnetization free layer 60 is prevented from being parallel to the easy axis and the hard axis. Therefore, regardless of the sign of the magnetostriction constant of the magnetization free layer 60, it is necessary to weakly fix the magnetization of the magnetization free layer 60 so as not to be perpendicular or parallel to the blood flow direction.

When the magnetostriction constant of the magnetization free layer 60 has a positive sign, θ in FIG.
5 °, 135 ° to 170 °, 190 ° to 225 °, 315 ° to 350 °,
The amount of MR rotation can be increased by increasing the amount of magnetization rotation. When the magnetostriction constant of the magnetization free layer 60 has a negative sign, θ in FIG. 3E is 45 ° to 80 °, and 100 ° to 135 °.
When the angle is changed from 225 ° to 260 °, from 280 ° to 315 °, the amount of magnetization rotation can be increased and the MR change amount can be increased.

When blood pressure is measured by the blood pressure sensor 10, the pressure received from the blood vessel by the blood pressure sensor 10 varies depending on the state of the maximum blood pressure and the minimum blood pressure in accordance with the movement of the pulse. At the highest blood pressure, tensile stress acts strongly on the skin surface. At the lowest blood pressure, the tensile stress acts weakly on the skin surface. The strength of the tensile stress corresponds to the periodic vibration of the pulse.

Whether or not the blood pressure sensor 10 can measure the blood pressure can be determined by a change in the blood pressure associated with the periodic vibration of the pulse. In addition, the blood pressure sensor 10 or a control unit attached thereto calculates the values of the maximum blood pressure and the minimum blood pressure.

FIG. 4 is a diagram for explaining the maximum blood pressure and the minimum blood pressure. FIG. 4 shows an example when the blood pressure sensor 10 is attached to the wrist. As shown in (1) of FIG. 4, the blood pressure sensor 10 formed on the substrate is disposed so as to overlap the arterial blood vessel.

(2) of FIG. 4 shows a state where MR elements are arranged on a substrate (a flexible substrate is assumed in FIG. 4). The substrate is bent along the outer diameter of the arterial blood vessel. The tensile stress works in a direction substantially perpendicular to the blood flow direction.

(3) in FIG. 4 is a view of the substrate and the arterial blood vessel as viewed from the direction of blood flow in the systolic blood pressure state and the systolic blood pressure state. In the systolic blood pressure state, the arterial blood vessel is in a maximally inflated state, so that the tensile stress acting on the substrate increases. In the diastolic blood pressure state, arterial blood vessel expansion is suppressed, so that the tensile stress acting on the substrate is reduced.

(4) of FIG. 4 is a diagram showing the arrangement of the MR elements when detecting the systolic blood pressure state and the systolic blood pressure state. A case where the magnetostriction constant is a positive sign will be described. When no blood pressure is applied, the magnetization of the magnetization free layer 60 is directed in a direction other than the direction in which the tensile stress is applied. When the maximum blood pressure is applied, the substrate is greatly distorted, and the magnetization of the magnetization free layer is greatly rotated. When the minimum blood pressure is applied, the substrate is distorted to a smaller extent than at the maximum blood pressure, and the magnetization of the magnetization free layer takes an intermediate angle between the initial state and the maximum blood pressure state.

Blood vessels may not be clear. One example is when measuring blood pressure in the occipital artery, etc.
It is difficult to find complete blood vessels in the radial artery of the wrist. On the other hand, there is no problem if the flexible substrate of the blood pressure sensor has strain anisotropy. Specifically, when a tensile stress is applied to the skin, the substrate is always pulled in a specified direction, and the direction and the magnetization direction of the magnetization free layer 60 are set. A conceptual diagram is shown in FIG. As a specific method for imparting strain anisotropy, the flexible substrate may have a shape having a major axis and a minor axis, such as a rectangle or an ellipse. A conceptual diagram is shown in FIG. When the shape of the substrate is elliptical, the major axis direction corresponds to the longitudinal direction. When the shape of the substrate is rectangular, the long side direction corresponds to the longitudinal direction. The longitudinal direction preferably intersects with the blood flow direction.

In the case where the nonmagnetic layer 50 is a metal, GMR (Giant magnetoresistant)
e) An effect is exhibited, and in the case of an insulator, TMR (Tunnel magnetistist)
ance) effect is manifested. In the present embodiment and the second embodiment to be described below, a CPP (Current perpendental to) is energized in the stacking direction of the stacked films.
plane) -GMR effect is used. Energization is performed between the electrode 30 and the electrode 70. TM
Even when the R effect is used, current is applied in the same way in the stacking direction of the stacked films.

In order to measure the blood pressure, for example, the blood pressure fluctuation can be grasped by using the correlation between the data accumulated by measuring the blood pressure from the subject in advance and the MR change rate at that time. This will be described later.
(Modification 1)

FIG. 6 is a view showing a modification of the MR element 15 according to the first embodiment. The electrodes are omitted. A description of the same configuration as that described in the first embodiment is omitted.

The MR element 15 shown in FIG. 6A has an antiferromagnetic layer 90, a pinned magnetic layer 40, an underlayer 80,
The nonmagnetic layer 50, the magnetization free layer 60, and the protective layer 100 are provided in this order. This structure is called a bottom type spin valve film.

The underlayer 80 is for increasing the crystal orientation of the film laminated on the underlayer 80. Underlayer 8
As the material of 0, for example, amorphous Ta that is easily compatible with the substrate, crystalline Ru, NiFe, Cu, or the like that improves the crystal orientation of the layer thereon can be used. When amorphous Ta is laminated with crystalline Ru, NiFe, Cu or the like, both wettability and crystal orientation can be achieved. The film thickness of the foundation layer 80 is, for example, 0.5 nm to 5 nm.

The protective layer 100 protects the MR element 15 from damage when the MR element 15 is manufactured. As a material of the protective film 100, for example, Cu, Ta, Ru, or the like can be used. The film thickness of the protective film 100 is, for example, 1 nm to 20 nm.

The MR element 15 shown in FIG. 6B has an antiferromagnetic layer 90 and a magnetization pinned layer 110 on an underlayer 80.
, Antiparallel coupling layer 120, magnetization pinned layer 40, nonmagnetic layer 50, magnetization free layer 60, protective layer 100
Are provided in order. This structure is called a bottom-type synthetic valve film, and can increase the magnetization fixing force of the magnetization fixed layer 40.

The magnetization pinned layer 110 is pinned in one direction by exchange coupling from the antiferromagnetic layer 90. The material used for the magnetization pinned layer 110 is the same as that for the magnetization pinned layer 40. The thickness of the magnetization pinned layer 110 is made to be substantially the same as the magnetic film thickness of the magnetization pinned layer 40 (the product of the saturation magnetization Bs and the film thickness t, Bst). For example, it is 2 nm to 6 nm.

The antiparallel coupling layer 120 couples the magnetization of the magnetization pinned layer 40 and the magnetization of the magnetization pinned layer 110 in antiparallel. Therefore, even if the exchange coupling energy from the antiferromagnetic layer 90 is constant, the magnetization pinned layer 4
The fixed magnetic field with zero magnetization can be strengthened. Therefore, the influence on the magnetic noise generated from the electronic device can be reduced. As a material of the antiparallel coupling layer 120, for example, Ru, Ir, or the like can be used. The film thickness of the antiparallel coupling layer 120 is, for example, 0.8 nm to 1 nm.

As shown in FIG. 7A, the MR element 15 of this modification has a magnetization free layer 60 on an underlayer 80.
In addition, a top type spin valve film in which the nonmagnetic layer 50, the magnetization pinned layer 40, the antiferromagnetic layer 90, and the protective layer 100 are stacked in this order may be used.

As shown in FIG. 7B, the MR element 15 of the present modification has a magnetization free layer 60 on the underlayer 80,
Nonmagnetic layer 50, magnetization pinned layer 40, antiparallel coupling layer 120, magnetization pinned layer 110, antiferromagnetic layer 9
A top-type synthetic spin-valve film in which 0 and a protective layer 100 are sequentially stacked can also be used. The layers constituting the top-type spin valve film and the top-type synthetic spin-valve film are the same as the bottom-type spin-valve film and the bottom-type synthetic spin-valve film, and thus description thereof is omitted.

As a method of directing the magnetization of the magnetization free layer 60 in a direction different from the tensile stress, there is a method of using interlayer coupling with the magnetization of the magnetization pinned layer 40. When the nonmagnetic layer 50 is a metal, it is 3 nm or less, and when it is an insulator, it is 1.5 nm or less. Interlayer coupling works so that the magnetizations of both are aligned in parallel. Therefore, by fixing the magnetization of the magnetization pinned layer 40 in a direction different from the tensile stress,
The magnetization of the magnetization free layer 60 can be directed in the same direction with weak energy.

Further, when the magnetization free layer 60 is formed by a sputtering apparatus, the magnetization of the magnetization free layer 60 can be directed in one direction by applying a magnetic field. Since magnetization is easily directed in the direction of the magnetic field during film formation, it is preferable to form the film by sputtering while applying a magnetic field in a direction different from the tensile stress.
(Modification 2)

FIG. 8 is a view showing a modification of the MR element 15 according to the first embodiment. The electrodes are omitted. A description of the same configuration as that described in the first embodiment is omitted.

FIG. 8A is a top view of the MR element 15 showing the magnetization free layer 60. FIG.
B) is a cross-sectional view of the MR element 15, and includes a magnetization pinned layer 40, a nonmagnetic layer 50, and a magnetization free layer 6.
0 is shown.

As shown in FIG. 8A, the MR element 15 has a longitudinal shape having a longitudinal direction in a direction (in-plane direction) perpendicular to the stacking direction. As shown in FIG. 8A, the lengths of one side when the shape of the magnetization free layer 60 viewed from the top surface is rectangular are X and Y, respectively. At this time, Y is longer than X.

Thus, by making the magnetization free layer 60 into a shape having a longitudinal direction, the magnetization of the magnetization free layer 60 is oriented in the longitudinal direction by the shape magnetic anisotropy. This is because the magnetostatic energy is smaller in that direction.

As shown in FIG. 8C, the MR element 15 may have an elliptical shape having a major axis and a minor axis as viewed from above. Also in this case, as described above, the magnetization of the magnetization free layer 60 is oriented with respect to the major axis direction (longitudinal direction). FIG. 8D shows a cross-sectional view of the MR element 15.

In this way, the magnetization of the magnetization free layer 60 can be weakly fixed in one direction. Therefore, the direction of magnetization of the magnetization free layer 60 can be set to different directions of tensile stress applied to the MR element 15.

In FIG. 8, a rectangle and an ellipse are illustrated, but if the longitudinal shape has a longitudinal direction, the magnetization direction of the magnetization free layer 60 can be similarly directed to a direction different from the tensile stress.

Next, a method for manufacturing the blood pressure sensor 10 using the MR element 15 according to this modification will be described.

Examples of the substrate 20 include a substrate made of Si or glass, a substrate made of a flexible plastic material, and a substrate made of a soft magnetic material that is a metal. By giving the substrate 20 a high elastic modulus, it can be easily bent, and by giving a low rigidity, it is difficult to break. As a result, a flexible substrate is obtained, and the strain is increased with respect to the pressure.

In the case of a substrate made of a soft magnetic material such as Si, glass, or metal, the portion where the MR element 15 is disposed can be made thin to facilitate bending. The thinning of the Si substrate is performed by, for example, selective etching by RIE (Reactive Ion Etching) after creating an MR element to be described later.

A substrate made of a flexible plastic material is formed on a hard substrate such as Si or glass by coating, film formation, or synthesis. An MR element is formed thereon, and then peeled off from a hard substrate made of Si or glass. By providing the fixed support portion before peeling, it becomes easy to handle a substrate made of a flexible plastic material in a later step. Alternatively, a substrate made of a flexible plastic material may be formed with a thickness that does not bend, and a portion where the MR element 15 is disposed later may be thinned to a thickness that allows bending.

The characteristics required for a flexible plastic substrate will be described below. The first is water supply rate and moisture permeability. The plastic substrate has a water supply rate and moisture permeability that are almost zero for Si and glass substrates, and cannot be ignored for MR element production. The first reason that cannot be ignored is the problem of outgassing in the vacuum system. The substrate is placed in a vacuum chamber of a film forming apparatus each time an electrode, an MR film, or the like is formed during MR element formation. In the MR film forming apparatus, the degree of vacuum is 10 ^−9.
Since it is below the Torr level, it is necessary to suppress the amount of gas released from the flexible plastic substrate. It is effective to perform pre-baking before entering the film forming apparatus, or to perform baking before entering the film forming chamber by providing a heater in the preparation chamber of the multi-chamber film forming apparatus. The second reason why the water supply rate and moisture permeability cannot be ignored is the deformation of the substrate.
If the amount of substrate deformation is large, a fine MR element cannot be formed. Therefore, it is important to select a material with as low a water supply rate and moisture permeability as possible.

The second characteristic required for plastic substrates is mechanical strength. In the blood pressure sensor, the substrate flexes flexibly along the contraction / expansion of the blood vessel. For this reason, a material having a high elastic modulus, for example, 2 to 15000 MPa, preferably 50 MPa or more is desired. Furthermore, there are tensile strength and elongation at break as indices of strength that does not break during use. Tensile strength is preferably 10 to several hundred MPa. The elongation at break is 1% to 1000%, preferably 400 MPa or less.

A third characteristic required for plastic substrates is heat resistance. The MR film requires heat treatment in a magnetic field in order to fix the magnetization of the magnetization pinned layer in one direction. A plastic material that can withstand this temperature is required. This index is a linear expansion coefficient, and the smaller this is, the smaller the stress applied to the substrate by heat. In the MR element production process, heat treatment at about 300 ° C. is required. A substrate having a sufficiently small linear expansion coefficient is required even at 300 ° C.

In view of the required characteristics described above, a polyimide substrate, a parylene substrate, or the like is preferable as the flexible plastic substrate.

An insulating layer is formed by laminating an aluminum oxide of about 500 nm on the substrate 20 by sputtering.

A resist is applied onto the insulating layer by a spin coat method, and the resist is patterned by photolithography to remove a part of the resist.

A portion of the substrate 20 is exposed by removing the portion of the insulating layer from which the resist has been removed by RIE (Reactive Ion Etching).

A portion of the substrate 20 exposed from the insulating layer is masked with Ta (5 nm) /
The electrode 30 is formed by stacking Cu (400 nm) / Ta (20 nm). Note that the parenthesis indicates the film thickness. '/' Indicates a stack, and when A / B / C is written,
It shows that the layer and the C layer are laminated.

The surface of the electrode 30 is exposed from the insulating layer by planarizing the surface of the insulating layer by performing CMP (Chemical Mechanical Polishing).

An MR film of about 40 nm is stacked on the electrode 30 exposed from the insulating layer by sputtering using a mask.

A plurality of linear grooves having a width of 2 μm to 5 μm are formed in the MR film using a mask.

A silicon oxide layer is deposited on the insulating layer and the MR film by sputtering to a thickness of about 200 nm.

A resist is applied onto the silicon oxide layer by spin coating, and the resist on the upper surface of the MR film is removed in a range of 1.5 μm to 5 μm in a direction perpendicular to the direction in which the groove of the MR film is formed. Defines the shape of the MR film.

By removing the silicon oxide layer where the resist has been removed by RIE and ion milling, the upper surface of the MR film is exposed.

The heat treatment in the magnetic field for directing the magnetization of the magnetization pinned layer 40 in one direction is performed even after the MR element is manufactured.
It may be immediately after the R film is formed. When the antiferromagnetic layer was IrMn, heat treatment was performed at 280 ° C. for 4 hours in a magnetic field of 7 kOe.

The blood pressure sensor 10 is manufactured by forming an electrode 70 by laminating about 100 nm of Au on the upper surface of the MR film exposed from the silicon oxide layer using a mask. Thereafter, an Au pad or the like is formed on the electrode 70.
(Modification 3)

FIG. 9 is a view showing a modification of the MR element 15 according to the first embodiment. The electrodes are omitted. A description of the same configuration as that described in the first embodiment is omitted.

A hard magnetic layer 130 is provided so as to sandwich the magnetization pinned layer 40, the nonmagnetic layer 50, and the magnetization free layer 60 in a direction perpendicular to the stacking direction of the MR elements 15.

The magnetization in the hard magnetic layer 130 is directed in one direction by annealing at 200 ° C. or more and 250 ° C. or less in a magnetic field of about 5 kOe, for example. Due to the magnetic field from the hard magnetic layer 130, the magnetization of the magnetization free layer 60 is oriented in the same direction as the magnetic field direction of the hard magnetic layer 130. For the hard magnetic layer 130, for example, CoPt, FePt, or the like can be used. The film thickness of the hard magnetic layer 130 is, for example, 5 nm to 20 nm.

Next, a method for manufacturing the blood pressure sensor 10 using the MR element 15 according to this modification will be described.

An insulating layer is formed by laminating an aluminum oxide of about 500 nm on the substrate 20 by sputtering.

A resist is applied onto the insulating layer by a spin coat method, and the resist is patterned by photolithography to remove a part of the resist.

A portion of the substrate 20 is exposed by removing the portion of the insulating layer from which the resist has been removed by RIE.

A portion of the substrate 20 exposed from the insulating layer is masked with Ta (5 nm) /
The electrode 30 is formed by stacking Cu (400 nm) / Ta (20 nm).

The surface of the electrode 30 is exposed from the insulating layer by performing CMP to flatten the surface of the insulating layer.

An MR film of about 40 nm is stacked on the electrode 30 exposed from the insulating layer by sputtering using a mask.

About 3 of the hard magnetic layer 130 is formed on the side surface of the MR film by sputtering using a mask on the insulating layer.
Laminate 0 nm.

Next, a silicon oxide layer is formed on the insulating layer, MR film, and hard magnetic layer by sputtering to a thickness of about 200 nm.
Laminate.

A resist is applied on the silicon oxide layer by spin coating, and the resist on the silicon oxide layer on the upper surface of the MR film is removed.

By removing the silicon oxide layer where the resist has been removed by RIE and ion milling, the upper surface of the MR film is exposed.

Using a mask on the upper surface of the MR film exposed from the silicon oxide layer, Ta (5 nm) / Cu (4
The blood pressure sensor 10 is manufactured by stacking (00 nm) / Ta (5 nm) to form the electrode 70.
Thereafter, an Au pad or the like is formed on the electrode 70.

The heat treatment in the magnetic field for directing the magnetization of the magnetization pinned layer 40 in one direction is performed even after the MR element is manufactured.
It may be immediately after the R film is formed. When the antiferromagnetic layer was IrMn, heat treatment was performed at 280 ° C. for 4 hours in a magnetic field of 7 kOe.
(Modification 4)

FIG. 10 is a view showing a modification of the MR element 15 according to the first embodiment. The electrodes are omitted. A description of the same configuration as that described in the first embodiment is omitted.

An antiferromagnetic layer 90 is provided on the magnetization free layer 60. As shown in FIG. 10A, when the antiferromagnetic layer 90 is provided on the upper surface of the magnetization free layer 60, a thin antiferromagnetic layer 90 having a thickness of 1 nm to 5 nm is used. Provide. By doing so, since the antiferromagnetic layer 90 and the magnetization free layer 60 are weakly exchange-coupled, the magnetization of the magnetization free layer 60 is weakly fixed.

As shown in FIG. 10B, two antiferromagnetic layers 90 may be provided apart from each other on the magnetization free layer 60. The material of the antiferromagnetic layer 90 is, for example, IrMn and the thickness is, for example, 5 nm to 7 nm. In the place where the antiferromagnetic layer 90 of the magnetization free layer 60 is provided, the magnetization free layer 60 and the antiferromagnetic layer 90 are strongly exchange coupled. As a result, in the magnetization free layer 60 provided with the antiferromagnetic layer 90, the magnetization of the magnetization free layer 60 is fixed in one direction. In the case of FIG.
The magnetization of the magnetization free layer 60 is pinned in one direction by the antiferromagnetic layer 90 at two locations of the magnetization free layer 60. Therefore, the magnetization free layer 60 in which the antiferromagnetic layer 90 is not provided is also aligned in one direction.

As shown in FIGS. 11A and 11B, the stacking order is the antiferromagnetic layer 90, the magnetization free layer 60,
The nonmagnetic layer 50 and the magnetization pinned layer 40 may be used.

According to this modification, the magnetization of the magnetization free layer 60 can be directed in one direction with relatively small energy.
(Second Embodiment)

FIG. 12 is a view showing a blood pressure sensor 190 according to the second embodiment. A description of the same configuration as that described in the first embodiment is omitted. The blood pressure sensor 190 uses a plurality of MR elements 15.

A plurality of wirings (also referred to as bit lines) 35 are arranged in the column direction, and wirings (also referred to as word lines) 75.
Are arranged in the row direction. The MR element 15 is provided between the wiring 35 and the wiring 75 at a position where the wiring 35 and the wiring 75 intersect. The wiring 35 and the wiring 75 that sandwich the plurality of MR elements 15 are sandwiched between the insulating layers 200 and 210. The insulating layers 200 and 210 are further sandwiched between the substrates 220 and 230.

The material of the wirings 35 and 75 is the same as that of the electrodes 30 and 70. The MR element 15 has electrodes 30 and 70.
There is no need.

The substrates 220 and 230 are the same as the material of the substrate 20.

For the insulating layers 200 and 210, for example, aluminum oxide (for example, Al ₂ O ₃ ), silicon oxide (for example, SiO ₂ ), or the like can be used.

When the substrates 220 and 230 are insulators, the insulating layers 200 and 210 may not be used. A layer (soft magnetic layer) made of a soft magnetic material may be inserted between the insulating layer 200 and the substrate 220 or between the insulating layer 210 and the substrate 230. By inserting the soft magnetic layer between the insulating layer and the substrate, magnetic noise with respect to the MR element 15 can be reduced. The influence on magnetic noise may be reduced by using a soft magnetic material for the substrates 220 and 230 .

Next, the operation principle of the blood pressure sensor 190 will be described.

FIG. 13 is a diagram for explaining the operation principle of the blood pressure sensor 190.

Control units 240, 250, 260, and 270 are provided for the wiring 35 and the wiring 75. The insulating layers 200 and 210 and the substrates 220 and 230 are omitted. Three wires 35 are shown,
These are designated as BL1, BL2, and BL3, respectively. Four wirings 75 are shown, which are designated as WL1, WL2, WL3, and WL4, respectively. The number of wirings 35 and 75 is not limited to this. It is assumed that a tensile stress is applied to the blood pressure sensor 190.

The control units 240 and 250 select BL1 among the plurality of BL1 to BL3 and energize it. BL1
In the state where current is supplied, the control units 260 and 270 sequentially supply current from WL1 to WL4 and sequentially measure the MR change rates of the plurality of MR elements 15 provided along BL1. When energization is completed up to WL4, BL2 is selected and energization is performed. WL1 to WL again with BL2 energized
4 is energized in sequence, and the MR change rates of the plurality of MR elements 15 provided along BL2 are measured in sequence. Thus, the MR change rate of all the MR elements 15 sandwiched between the wiring 35 and the wiring 75 is measured, and the CPU ((Central Process) connected to the control unit is measured.
ing Unit) (not shown) specifies the MR element 15 having the largest MR change rate. MR
When the MR element 15 having the highest rate of change can be identified, blood pressure is measured using the MR element 15 having the highest rate of change in MR.

The above operation may be repeated with a certain time interval in units of minutes or hours, for example. Further, the data measured by the blood pressure sensor 190 may be accumulated in a database connected to the blood pressure sensor 190.
(Modification 5)

FIG. 14 is a diagram illustrating a modification of the blood pressure sensor 190 according to the second embodiment. A description of the same configuration as that described in the second embodiment is omitted.

Both end surfaces of the substrates 220 and 230 of the blood pressure sensor 190 are sandwiched between the supports 280 and 290.
The support 280 and the support 290 are opposed to each other. These supports 280 and 290 serve as reference points for distortion of the substrates 220 and 230 which are distorted by receiving tensile stress. That is, the support 280,
290 serves as a fixed end. For this reason, a more quantitative blood pressure measurement can be performed. When viewed from the direction perpendicular to the surface of the substrate 220 or the substrate 230 on which the wirings 35, 75, etc. are provided, it is as shown in FIG.

For the supports 280 and 290, for example, a material such as silicon can be used. Support 28
For example, 0 and 290 are preferably plate-shaped. The thickness is, for example, about 1 μm.

As shown in FIG. 15B, a support body may be provided so as to surround the end surfaces of the substrate 220 and the substrate 230.

When providing a plurality of blood pressure sensors 190, for example, as shown in FIG. 16, the blood pressure sensors 190 may be provided between the plurality of supports in the direction in which the tensile stress acts. FIG. 17A is a view as seen from the direction perpendicular to the surface of the substrate 220 or the substrate 230 of FIG.

A support may be provided so as to surround the end surfaces of the substrate 220 and the substrate 230 as shown in FIG. When a plurality of blood pressure sensors 190 are provided over a two-dimensional plane as shown in FIG. 17C, a support may be provided so as to surround the end surfaces of the substrates 220 and 230.
(Modification 6)

FIG. 18 is a diagram illustrating a modified example of the blood pressure sensor 190 according to the second embodiment. A description of the same configuration as that described in the second embodiment is omitted.

In addition to the supports 280 and 290 described in the fifth modification, another support 300 is provided on the end surfaces of the supports 280 and 290. By providing the support body 300 in this manner, the support bodies 280 and 290 can be more firmly fixed. Therefore, more quantitative blood pressure measurement can be performed.

In the case where a plurality of blood pressure sensors 190 are provided, for example, the blood pressure sensors 190 are provided between the plurality of supports in the direction in which the tensile stress acts as shown in FIG.
(Modification 7)

FIG. 20 is a diagram illustrating a modified example of the blood pressure sensor 190 according to the second embodiment. A description of the same configuration as that described in the second embodiment is omitted.

A pressurizing mechanism 310 is provided on a substrate 230 constituting the pressure sensor 190. By maintaining the pressure P2 of the pressurizing mechanism 310 constant within a range that is balanced with the blood pressure P1 of the measurement subject in advance, more quantitative blood pressure measurement can be performed. In this case, to obtain the absolute value of blood pressure during measurement,
Correlation data between the pressure of the blood pressure sensor and the electrical resistance is accumulated in advance. Specifically, the pressure P1 is applied while being changed by a pressure generator that controls the pressure, and the electric resistance R corresponding to the pressure P1 is taken. The correlation data between the pressure P1 and the electric resistance R is used as a blood pressure sensor gauge. When actually measuring the blood pressure, the stored blood pressure is referred to from the electrical resistance R obtained as data to obtain the blood pressure P1. By using the pressurizing mechanism 310, the correlation between the MR change rate and the blood pressure can be measured.

The pressurizing mechanism 310 corresponds to the broken line shown in FIG. The pressurizing mechanism 310 can keep the pressure constant. The pressurizing mechanism may be configured so as to be surrounded by a support, or the substrate 230.
You may comprise by providing the housing | casing sealed on top.

Further, as shown in FIG. 21, the pressure mechanism 31 is provided by providing a spring 320 in the pressure mechanism 310.
The zero pressure may be constant. As the spring 320, for example, a precision micro spring having a diameter of 800 μm can be used. A plurality of springs 320 may be provided.

Note that a plurality of blood pressure sensors 190 may be provided as described with reference to FIG. In this case, for example, by providing springs having various spring constants, blood pressure corresponding to various subjects can be measured.

Further, the pressure mechanism 310 may adjust the pressure by electronic control from the outside. For example, in the case of using a sealed casing, electronic control is performed on the entry and exit of air from the outside.
(Third embodiment)

FIG. 22A is a diagram showing a blood pressure sensor 400 according to the third embodiment. The first embodiment and the second embodiment are different from each other in that a CIP (Current in Plane) -GMR effect is used. That is, the MR ratio is detected by energizing in the in-plane direction (direction perpendicular to the lamination direction) of the laminated film of the MR element.

In the blood pressure sensor 400, the insulating layer 200 is provided on the substrate 20, and a pair of electrodes 30 and 70 are provided so as to sandwich the MR film 410 in a direction perpendicular to the stacking direction of the MR film 410. In the case where the substrate 20 is an insulator, the insulating layer 200 may not be provided.

Since the MR film 410 is obtained by removing the electrodes 30 and 70 from the MR element 15, description thereof will be omitted.

A hard magnetic layer 130 may be provided between the electrodes 30 and 70 and the MR film 410 as shown in FIG.
(Modification 8)

FIG. 23 is a diagram illustrating a modification of the blood pressure sensor 400 according to the third embodiment. FIG. 23 shows a circuit using the blood pressure sensor 400. The substrate 20 and the like are omitted. Further, the description of the same configuration as that of the third embodiment is omitted.

As shown in FIG. 23A, a plurality of wirings 35 are provided in the column direction, and a plurality of wirings 75 are provided in the row direction. At the position where the wiring 35 and the wiring 75 intersect, the wiring 35 and the wiring 7
5 is provided with an MR film 410. The principle of operation is
Since it is the same as that described with reference to FIG.

FIG. 23B is a view of the circuit of the blood pressure sensor 400 viewed from the row direction. MR for wiring 35
A membrane 410 is sandwiched.

FIG. 23C is a view of the circuit of the blood pressure sensor 400 viewed from the column direction. MR for wiring 75
A membrane 410 is sandwiched.

In addition, since the above structures differ only in the electricity supply direction from 2nd Embodiment, it can be used for the form demonstrated in the modifications 5-7.
(Fourth embodiment)

FIG. 24 is a diagram illustrating a fourth embodiment of the blood pressure sensor. FIG. 24 shows a state in which a measurement subject is measured using a blood pressure sensor. FIG. 24 shows an example of a power supply method and a data storage method when a blood pressure sensor is attached to a blood pressure measurement site. The blood pressure sensor includes first, second,
The blood pressure sensors 10, 190, and 400 described in the third embodiment can be used.

As a power feeding method, a small battery can be used, or wireless power feeding can be employed. As a data storage method, for example, a method of storing in a mobile phone, a personal computer, a wristwatch or the like by wireless transmission is used.
(Example)

On a silicon substrate, Al ₂ O ₃ (20 nm) / Cu (400 nm (corresponding to an electrode)) / Ir
Mn (7 nm) / CoFe (3.4 nm) / Ru (0.8 nm) / FeCo (3 nm (corresponding to a magnetization pinned layer)) / Al ₂ O ₃ (1 nm (corresponding to a nonmagnetic layer)) / FeCo (4 nm ( MR element was fabricated by laminating by sputtering the equivalent of magnetization free layer)) / Cu (400 nm (corresponding to electrode)) / Ta (corresponding to (3 nm) protective layer). The MR element was then processed into an 8 μm square. The produced MR element was used as a TMR element.

FIG. 25 is a diagram illustrating a result of measuring the electrical resistance of the MR element by sweeping an external magnetic field in the range of −4000 Oe to 4000 Oe to the manufactured MR element. The vertical axis represents the electrical resistance value R (Ω) of the MR element, and the horizontal axis represents the magnetic field H (Oe).

As shown in FIG. 25, it can be seen that when the external magnetic field is increased, the electrical resistance value is rapidly increased or decreased. When the electric resistance value is the smallest, it indicates that the magnetization direction of the magnetization free layer and the magnetization direction of the magnetization pinned layer are parallel. When the electric resistance value is the largest, it indicates that the magnetization direction of the magnetization free layer and the magnetization direction of the magnetization pinned layer are antiparallel. The MR change rate at this time was 36%, the sheet resistance was 5 kΩμm ² , and the magnetostriction constant of the magnetization free layer was 56 ppm. The area resistance is the product of the cross-sectional area perpendicular to the stacking direction of the MR element stacked film and the resistance obtained from a pair of electrodes when a current is passed perpendicularly to the film surface of the MR element stacked film. . MR
The rate of change indicates a value obtained by dividing the amount of change in the electrical resistance value by the electrical resistance value. The magnetostriction constant λs indicates the amount of the ferromagnetic layer extending in the plane by applying an external magnetic field in the in-plane direction of the ferromagnetic layer. If there is no external magnetic field and the length is l, but is extended by Δl, the magnetostriction constant λ
s is represented by the following formula.

λs = Δl / l

This phenomenon is called the magnetostrictive effect. When the ferromagnetic layer is extended by Δl, the phenomenon in which the direction of magnetization is extended is called the inverse magnetostriction effect. As described above, in the blood pressure sensor, tensile stress is applied by applying strain, and the magnetostriction effect is obtained by extending the magnetization free layer 60. When the magnetostriction constant is negative, when an external magnetic field is applied, the magnetic layer is compressed in that direction.

From the above, it was found that the produced MR element showed a good MR change rate with respect to strain.

FIG. 26 is a diagram showing the results of measuring the electrical resistance of the MR element by applying a tensile stress to the manufactured MR element. The vertical axis represents the electric resistance value R (Ω), and the horizontal axis represents the strain applied to the silicon substrate (applied strain ε (percentage: ‰)). As shown in FIG. 27, the strain was applied by fixing three points on the substrate. Both ends are fixed ends, and strain is applied by pressing the intermediate point.
At this time, the distortion is expressed by the following equation.

ε = 6 hT / l ²

Here, h is the displacement in the vertical direction of the substrate, T is the thickness of the substrate, and l is the distance between the fixed ends of the substrate.

In a state without distortion, the magnetization of the magnetization free layer is oriented in the same direction as the magnetization of the magnetization fixed layer due to the magnetic interlayer coupling between the magnetization free layer and the magnetization fixed layer. Further, the magnetization of the magnetization pinned layer was determined by performing a heat treatment at 280 ° C. for 4 hours in a magnetic field of 7 kOe after forming the MR film. The direction of the magnetic field was parallel to the substrate orientation flat. Therefore, the magnetization of the magnetization free layer also faces the substrate orientation flat direction. This was memorized, and the strain was measured while being applied in a direction perpendicular thereto. Here, the external magnetic field is parallel to the magnetization direction of the magnetization pinned layer 40, and the external magnetic field is 6 [Oe].
The measurement was performed in the applied state. In an actual blood pressure sensor, in order to apply a magnetic field to the MR element from the outside, a hard magnetic layer is disposed on the side wall, or an antiferromagnetic layer is brought into contact with the magnetization free layer. A tensile strain was applied to the MR element by bending the silicon substrate so that a tensile stress acts in a direction perpendicular to the magnetization direction of the magnetization free layer. The value of applied strain ε is set to 0 ‰, 0.35 ‰,
The electrical resistance of the MR element was measured at 0.55 ‰, 0.78 ‰, and 0.99 ‰.

From FIG. 26, it was found that since the electrical resistance value changed according to the change in applied strain, the manufactured MR element showed a good MR change rate with respect to the strain. It can also be seen that the electrical resistance value decreases as the applied strain value increases. This is because, initially, the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetization free layer are anti-parallel, and the magnetization of the magnetization free layer rotates to approach parallel to the magnetization direction of the magnetization fixed layer. This is because.

Generally, a gauge factor is used as an indicator of whether or not a good response to strain is exhibited. The gauge factor is defined by a value obtained by dividing the MR change rate by the strain amount ε. It can be said that the greater the value of the gauge factor, the better the sensitivity to strain. This can be understood from the fact that when the strain amount ε is fixed, the value of the gauge factor increases as the MR change rate increases.

The produced MR element had a gauge factor value of 270. This is ME using Si
It is known that the gauge factor of the MS pressure sensor is about 140, which is much larger than that.

In addition, on a silicon substrate, Al ₂ O ₃ (20 nm) / Cu (400 nm (corresponding to an electrode)
) / IrMn (7 nm) / CoFe (3.4 nm) / Ru (0.8 nm) / FeCoB (
3 nm (corresponding to a magnetization pinned layer) / MgO (1 nm (corresponding to a nonmagnetic layer)) / FeCo (1 n
m (corresponding to a magnetization free layer)) / FeCoB (4 nm (corresponding to a magnetization free layer)) / Cu (400
In an MR element produced by sputtering as nm (corresponding to an electrode) / Ta (corresponding to a (3 nm) protective layer) and processed into a square of 8 μm square, the MR change rate is 200% and the gauge factor is 1000 there were. As described above, the value of the gauge factor can be increased by using the MR element.
(Fifth embodiment)

FIG. 28 is a diagram showing a blood pressure measurement system using the blood pressure sensor 500. Blood pressure sensor 50
0 is the same configuration as the blood pressure sensors 190 and 400. The blood pressure sensor 500 is attached to the blood pressure measurement site of the measurement subject. Here, the blood pressure measurement site is shown as a wrist. It is assumed that the blood pressure measurement system according to this embodiment includes a blood pressure sensor 500 and an electronic device 510. The electronic device 510 indicates, for example, a television, a mobile phone, a medical database, a personal computer, or the like.

The blood pressure sensor 500 includes a processing unit 520 inside.

The processing unit 520 includes a first control unit 530 that controls the blood pressure sensor 500 and a first control unit 53.
A transmission unit 540 that transmits information from 0 to the outside, and a second reception unit 550 that receives information from the outside and sends the information to the first control unit 520.

The information refers to, for example, blood pressure value data, electrical resistance change rate data, and electrical resistance value data.

The electronic device 510 includes a reception unit 560, a second control unit 570, a calculation unit 580, and a transmission unit 5.
90 and a database (hereinafter referred to as DB1).

The reception unit 560 receives the information transmitted from the transmission unit 540 and transmits the information to the second control unit 570.

The second control unit 570 transmits the information received from the reception unit 560 to the calculation unit 580 and transmits the information to the transmission unit 5.
The information is transmitted to 90 or stored as data in DB1.

The calculation unit 580 calculates information transmitted from the second control unit 570. The calculation method will be described later.

Information exchange between the transmission unit 540 and the reception unit 560, and the transmission unit 590 and the reception unit 5
The exchange of information between 50 is wireless communication or wired communication.

FIG. 29 is a flowchart for explaining the operation of the blood pressure measurement system using the blood pressure sensor.

In step S10, the first control unit 530 instructs the blood pressure sensor 500 to measure the electrical resistance change amount at the blood pressure measurement site. At this time, the electrical resistance change amount in all MR elements provided in the blood pressure sensor 500 is measured. The electrical resistance change amount measured by the blood pressure sensor 500 is transmitted as data to the reception unit 560 of the electronic device 510 by the transmission unit 540 via the first control unit 530. The electrical resistance change amount data received by the reception unit 560 is transmitted to the calculation unit 580 via the second control unit 570. The calculation unit 580 performs calculation for converting the electrical resistance change amount data to the electrical resistance change amount.

FIG. 30 is a diagram for explaining a method of measuring the electrical resistance change amount of the blood pressure sensor 500. Each MR element provided at a position where the word line and the bit line intersect is designated by the word line and the bit line.
For example, an MR element at a position where the word line WL1 and the bit line BL1 cross each other has an MR element label of 11, and the electric resistance obtained there is called R11.

A current is applied to each of the arranged MR elements. For example, the number of word lines is N,
When the number of bit lines is M, the energized portion of the bit line is energized from BL1 to BLM while energizing WL1, and energized from BL1 to BLM while energizing WL2 as necessary, and the same is repeated until WLN. Further, this is repeated at the time of vasoconstriction and vasodilation. The electrical resistance at the time of vasoconstriction is Rcoarctation, the electrical resistance at the time of vasodilation is Rdilation, and together with the label of the MR element, the electrical resistance of the MR element 11 at the time of vasoconstriction is Rcoarctation11, and the electrical resistance at the time of vasodilation is Rdilation11. . Next, the absolute value of the electrical resistance change amount at the time of vasoconstriction and vasodilation in each MR element is obtained. That is, in the MR element XY, Δ
RXY = | RcoarctationXY−RdilationXY | is calculated by calculation.

In step S20, the calculation unit 580 further grasps the MR element disposed at a position where the contraction / expansion of the blood vessel can be detected to the maximum based on the absolute value of the electric resistance change amount.

FIG. 31 is a diagram illustrating a method of selecting an MR element that maximizes the absolute value of the electrical resistance change amount during vasoconstriction and vasodilation. That is, the electric resistance change amount ΔR11 of the MR element 11 and the electric resistance change amount ΔR12 of the MR element 12 are compared, and the larger value is recorded. The recorded value and Δ
Compare R13 and record the larger value. By repeating the comparison and recording up to the last MR element MN, it is possible to grasp the MR element that has the largest amount of electrical resistance change during vasoconstriction and vasodilation. When the MR element having the largest electric resistance change amount is grasped, the second control unit 570 transmits to the receiving unit 550 via the transmitting unit 590 so as to select the MR element. Receiver 550
Transmits the instruction information to the first control unit 530, and the first control unit 530 selects the MR element having the maximum change in electrical resistance.

In step S30, the first controller 530 instructs the blood pressure sensor 500 to continuously acquire the electrical resistance value of the MR element selected in step S20. By measuring for a certain period, the maximum blood pressure, the minimum blood pressure, and the blood pressure waveform are obtained. The fixed period indicates a second unit or a minute unit, for example, 30 seconds, 2 minutes, or the like.

In step S40, the electric resistance value acquired by the measurement in step S30 is used as data as DB1.
To store.

In step S50, an electrical resistance value continuously measured by calculation is converted into blood pressure using a correlation database of blood pressure and electrical resistance acquired in advance. When creating the database, a pressure control device capable of accurately controlling blood pressure is used to apply pressure to the blood pressure sensor. The pressure range includes at least 50 mmHg to 300 mmHg so as to cover the blood pressure, and is obtained in increments of at least 1 mmHg and preferably in increments of 0.01 mmHg for accurate measurement. Data of electrical resistance values corresponding to such blood pressure is acquired and used as a database. In this database, for example, a correlation graph as shown in the upper diagram of FIG. 32 is obtained. As shown in the lower diagram of FIG. 32, when measuring blood pressure, blood pressure data is converted into blood pressure corresponding to the database.

DESCRIPTION OF SYMBOLS 10 ... Blood pressure sensor, 15 ... Magnetoresistive effect element (MR element), 20 ... Board | substrate, 3
0, 70 ... Electrode, 40 ... Magnetized pinned layer, 50 ... Nonmagnetic layer, 60 ... Magnetized free layer

Claims (19)

A substrate having a first region, said second region first direction tensile stress to flex there inside occurs in the first region is supported by the support body,
A magnetoresistive element provided in a part of the second region ,
The magnetoresistive effect element is
A first electrode provided on the substrate;
A magnetization pinned layer provided on the first electrode and having magnetization oriented in one direction;
A nonmagnetic layer provided on the magnetization pinned layer;
A variable which is provided in a region corresponding to the non-magnetic layer and on the magnetization pinned layer and faces a direction different from both the first direction and the second direction perpendicular to the first direction. A first magnetization free layer having a magnetization of
A MEMS pressure sensor including a second electrode provided on the first magnetization free layer. A substrate having a first region, said second region first direction tensile stress to flex there inside occurs in the first region is supported by the support body,
A magnetoresistive element provided in a part of the second region ,
The magnetoresistive effect element is
A first electrode provided on the substrate;
A first magnetization free layer having a variable magnetization provided on the first electrode and facing a direction different from both the first direction and the second direction perpendicular to the first direction;
A nonmagnetic layer provided on the first magnetization free layer;
A magnetization pinned layer provided in a region corresponding to the nonmagnetic layer and on the first magnetization free layer, and having a magnetization oriented in one direction;
A MEMS pressure sensor including a second electrode provided on the magnetization pinned layer. A direction that is in a region corresponding to the magnetization pinned layer and is provided between the first magnetization free layer and the second electrode, and is different from the first direction and the second direction. A second magnetization free layer having a variable magnetization facing
The first magnetization free layer includes an FeCo alloy, and the second magnetization free layer includes an Fe—Co—Si—B alloy, a Tb—M—Fe alloy (M is Sm, Eu, Gd, Dy, Ho, Er), Fe-Co-B, Tb-M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4-B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, The MEMS pressure sensor according to claim 1, comprising Er), Ni, an Al-Fe alloy, or ferrite. It is in a region corresponding to the first magnetization free layer, and is provided between the first magnetization free layer and the nonmagnetic layer, and is different from both the first direction and the second direction. A second magnetization free layer having a variable magnetization facing the direction,
The first magnetization free layer is composed of an Fe-Co-Si-B alloy, a Tb-M-Fe alloy (M is Sm, Eu, Gd, Dy, Ho, Er), Fe-Co-B, Tb-M1-. Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4-B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al-Fe alloy, or ferrite. The MEMS pressure sensor according to claim 2, wherein the second magnetization free layer includes an FeCo alloy. The MEMS pressure sensor according to claim 1, wherein the substrate has a shape having a longitudinal direction. The first magnetization free layer has a longitudinal shape having a longitudinal direction in a direction perpendicular to a stacking direction of the magnetization pinned layer, the nonmagnetic layer, and the first magnetization free layer. Item 3. The MEMS pressure sensor according to Item 2. The magnetization pinned layer, the nonmagnetic layer, and the first magnetization free layer are perpendicular to the stacking direction and sandwich the magnetization pinned layer, the nonmagnetic layer, and the first magnetization free layer. A pair of hard magnetic layers provided as follows:
The MEMS pressure sensor according to claim 1 or 2, further comprising: An antiferromagnetic layer provided between the first magnetization free layer and the second electrode;
The MEMS pressure sensor according to claim 1, further comprising: An antiferromagnetic layer provided between the magnetization pinned layer and the second electrode;
The MEMS pressure sensor according to claim 2, further comprising: The MEMS pressure sensor according to claim 8, wherein the antiferromagnetic layer is provided separately on the first magnetization free layer . The MEMS pressure sensor according to claim 1, wherein the substrate contains polyimide or parylene. The MEMS pressure sensor according to claim 1, wherein the substrate is a soft magnetic material. A first insulating film provided between the first electrode and the substrate;
A first soft magnetic layer provided between the first insulating film and the substrate;
A second insulating film provided on the second electrode;
A second soft magnetic layer provided on the second insulating film;
The MEMS pressure sensor according to claim 1, further comprising: A substrate having a first region, said second region first direction tensile stress to flex there inside occurs in the first region is supported by the support body,
A plurality of first wires provided in the second direction on the second region ;
A plurality of first electrodes provided on the first wiring; a magnetization pinned layer provided on the first electrode and having a magnetization oriented in one direction; and a nonmagnetic layer provided on the magnetization pinned layer. A layer and a direction different from a first direction and a third direction perpendicular to the first direction provided in a region corresponding to the nonmagnetic layer and the magnetization pinned layer. A magnetoresistive effect element comprising: a first magnetization free layer having a variable magnetization; and a second electrode provided on the first magnetization free layer;
A plurality of second wirings provided on the magnetoresistive element in a fourth direction intersecting the second direction so as to sandwich the magnetoresistive element;
A MEMS pressure sensor comprising: A substrate having a first region, said second region first direction tensile stress to flex there inside occurs in the first region is supported by the support body,
A plurality of first wires provided in the second direction on the second region ;
A plurality of first electrodes provided on the first wiring and a direction different from both the first direction and a third direction perpendicular to the first direction provided on the first electrode A first magnetization free layer having a variable magnetization facing the magnetic field, a nonmagnetic layer provided on the first magnetization free layer, the nonmagnetic layer , and the first magnetization free layer A magnetoresistive effect element including a magnetization pinned layer provided in a region corresponding to 1 and having a magnetization oriented in one direction, and a second electrode provided on the magnetization pinned layer;
A plurality of second wirings provided on the magnetoresistive element in a fourth direction intersecting the second direction so as to sandwich the magnetoresistive element;
A MEMS pressure sensor comprising: A direction that is in a region corresponding to the magnetization pinned layer and is provided between the first magnetization free layer and the second electrode, and is different from the first direction and the third direction. A second magnetization free layer having a variable magnetization facing
The first magnetization free layer includes an FeCo alloy, and the second magnetization free layer includes an Fe—Co—Si—B alloy, an Fe—Co—B, and a Tb—M—Fe alloy (M is Sm, Eu, Gd, Dy, Ho, Er), Tb-M1-Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2, M2, Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4-B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, The MEMS pressure sensor according to claim 14, comprising Er), Ni, an Al—Fe alloy, or ferrite. It is in a region corresponding to the first magnetization free layer and is provided between the first magnetization free layer and the nonmagnetic layer, and is different from both the first direction and the third direction. A second magnetization free layer having a variable magnetization facing the direction,
The first magnetization free layer is composed of an Fe-Co-Si-B alloy, a Tb-M-Fe alloy (M is Sm, Eu, Gd, Dy, Ho, Er), Fe-Co-B, Tb-M1-. Fe-M2 alloy (M1 is Sm, Eu, Gd, Dy, Ho, Er, M2 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta), Fe-M3-M4-B alloy (M3 is Ti, Cr, Mn, Co, Cu, Nb, Mo, W, Ta, M4 is Ce, Pr, Nd, Sm, Tb, Dy, Er), Ni, Al-Fe alloy, or ferrite. The MEMS pressure sensor according to claim 15, further comprising: the second magnetization free layer including an FeCo alloy. The MEMS pressure sensor according to claim 6, wherein the substrate is attached to a blood pressure measurement site of the measurement subject, and the longitudinal direction of the first magnetization free layer intersects the blood flow direction of the blood vessel of the measurement subject. .   The substrate is attached to a blood pressure measurement site of the measurement subject, and the first magnetization free layer has a longitudinal shape having a longitudinal direction, and the longitudinal direction intersects the blood flow direction of the blood vessel of the measurement subject. Item 16. The MEMS pressure sensor according to item 14 or claim 15.