JP5359165B2 - Nondestructive warpage measuring method and measuring apparatus for single crystal substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To measure warpage of a single-crystal substrate in a component sealed with a package material by diffracted X-rays through the package material without destroying the component. <P>SOLUTION: When the Bragg condition is satisfied when the rotation angle &omega; of a sample stage 6 measured from a wave number vector 8 of incident X rays 4 is changed with an X-ray detector 1 fixed, that is, when the angle &alpha; formed by the surface of a radiation area of an Si chip in a sample 30 and the wave number vector 8 of the incident X rays 4 is a specific value, crystal diffraction of X-rays occurs and the X-ray detector 1 detects diffracted X rays 9. The sample 30 has a structure in which the Si chip is mounted on a printed board and these are sealed with a mold. The X-ray detector 1 detects the diffracted X rays 9 through the mold and can acquire a rocking curve. Warpage of the Si chip can be measured based on the rocking curve. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a non-destructive warpage measuring method and measuring apparatus for a single crystal substrate, and more particularly to a non-destructive warpage measuring method for a single crystal substrate for measuring the warpage of a single crystal substrate using diffracted X-rays without destroying parts. It relates to a measuring device.

  In general, many of the physical properties and properties of a crystal material vary depending on stress and lattice strain appearing accompanying the stress. In addition, even if the crystal material has the same stress and lattice strain, it varies depending on the growth conditions and processing conditions of the same material, or the stress exerted by other materials in contact with the crystal material. Therefore, it is indispensable for the development of high-performance and highly reliable materials and products to evaluate the stress and lattice strain of the crystal material and to optimize the processing and growth conditions according to the application.

  In particular, when an electronic product is manufactured using a semiconductor crystal, the single crystal is processed into a thin plate-like wafer, and elements such as a diode, a transistor, and a capacitor are formed on one surface. Since the process for forming these elements includes steps such as oxidation, film formation, impurity introduction, etching, and heat treatment, stress is generated in the semiconductor wafer and appears as a macroscopic warpage. This warpage of the semiconductor wafer changes the physical properties and properties of the semiconductor crystal, thus affecting the performance and reliability of the device. Therefore, it is necessary to evaluate the warpage of the semiconductor wafer.

  Therefore, Patent Document 1 describes a method for measuring warpage of a single crystal substrate corresponding to a semiconductor wafer. In the method for measuring warpage of a single crystal substrate described in Patent Document 1, X-rays having a diffraction angle width of one hundredth or less of a silicon single crystal as a sample to be measured are incident on the single crystal substrate, and the warpage of the single crystal substrate causes Diffraction X-rays with different incident conditions are recorded on the nuclear plate. And in said measuring method, curvature is measured from the intensity distribution of the recorded diffraction X ray.

JP-A-4-285806

  By the way, in the recent large-scale semiconductor integrated circuit (LSI) packaging technology, due to the demand for space saving, the semiconductor wafer is thinned and divided into chips after the LSI diffusion process, and then packaging is performed. Is being considered.

  For example, by stacking and packaging semiconductor chips with the same function (mainly memory chips), the technology to improve the information processing capability and information storage capability of products without significantly increasing the mounting space is a multi-chip. -It is called a packaging (Multi-Chip-Packaging: MCP) technology. Also known is a system in package (SiP) technique in which semiconductor chips having different types of functions are stacked in one package and the package is given a new function.

  In such mounting technology represented by MCP and SiP, a semiconductor chip (single crystal substrate) is thinned to 100 μm or less. Since the thinned semiconductor chip is easily affected by the stress of the packaging material, the warped state of the semiconductor chip after packaging varies depending on the packaging material and the process. Therefore, it is necessary to measure the warpage of the semiconductor chip after packaging in order to control the performance of the semiconductor product and improve the reliability. In particular, it is desirable that warpage can be measured for each of a plurality of stacked semiconductor chips (single crystal substrates) after packaging.

  However, the above-described method for measuring the warpage of a single crystal substrate described in Patent Document 1 directly applies X-rays that are one-hundred or less of the diffraction angle width of a silicon single crystal to the single crystal substrate, and the resulting diffraction X This is a method of measuring warpage of a single crystal substrate based on a line. For this reason, in the method for measuring the warpage of a single crystal substrate described in Patent Document 1, X-rays are irradiated through the package to a plurality of stacked single crystal substrates in the package, and a plurality of stacked single crystal substrates are stacked from inside the package. It is impossible to detect the warpage of each single crystal substrate by detecting diffracted X-rays from the single crystal substrate.

  The evaluation of stress and warpage of a packaged semiconductor chip has heretofore been performed using Raman spectroscopy and strain gauge methods. However, Raman spectroscopy is a destructive inspection in which measurement is performed on the cross section of the package, and stress is relaxed when the cross section is created. Therefore, there is a concern that the measurement result may not reflect the actual stress of the semiconductor chip. Although the strain gauge method is a nondestructive inspection, the strain measured by this method is a strain on the package surface, and the strain applied to the semiconductor chip can be obtained only by estimation. In addition, when a plurality of semiconductor chips are stacked like the above MCP and SiP, the difficulty of estimating the strain of each semiconductor chip is greatly increased.

  The present invention has been made in view of the above points, and a single crystal substrate that measures the warpage of a single crystal substrate in a component sealed with a package material using a diffracted X-ray through the package material without destroying the component. An object of the present invention is to provide a nondestructive warpage measuring method and measuring apparatus.

In order to achieve the above object, a non-destructive warpage measuring method for a single crystal substrate according to the present invention is applied to a component in which a plurality of single crystal substrates stacked on one printed circuit board are sealed together with a printed circuit board with a package material. an irradiation step of irradiating the line, is detected by performing the peak separation in a single rocking curve diffracted X-rays from each of the single-crystal substrate in the package material over each of the warp of the single crystal substrate several And a detection / measurement step for nondestructively measuring.

In order to achieve the above object, the non-destructive warpage measuring apparatus for a single crystal substrate according to the present invention is a component in which a plurality of single crystal substrates stacked on a single printed circuit board are sealed together with a package material together with a package material. irradiating means for irradiating X-rays on, it is detected by performing the peak separation in a single rocking curve diffracted X-ray in the packaging material over from the individual single-crystal substrate, each of the multiple single-crystal substrate And a detecting / measuring means for non-destructively measuring the warpage of the substrate.

  According to the present invention, the warpage of the single crystal substrate sealed with the package material can be measured using the diffracted X-rays through the package material without destroying the components. Process optimization is possible, and high-performance and highly reliable product development can be promoted.

  Next, embodiments of the present invention will be described in detail with reference to the drawings.

  1 to 5 show an outline of means and configuration used in an X-ray diffraction method, which is the basis of a non-destructive warpage measuring method for a single crystal substrate according to the present invention, and an X-ray ray diagram. 1 to 5 are simplified for the sake of explanation, and may not completely coincide with the means and configuration of actual measurement and the X-ray ray diagram. 1 to 5, the same components are denoted by the same reference numerals.

In FIG. 1, X-rays generated by an appropriate X-ray source 2 pass through an incident slit 3 and enter an irradiation region 7 (region A) of a single crystal substrate 5 fixed on a sample stage 6. If the rotation angle ω of the sample stage 6 measured from the direction of the wave vector 8 of the incident X-ray 4 is changed while the X-ray detector 1 is fixed, the Bragg condition is satisfied, that is, the irradiation region 7 (region A). when taking a certain angle formed alpha between the surface and the wave vector 8 of the incident X-ray 4 specific value alpha _B, diffracted X-rays 9 at the X-ray detector 1 occurs crystal diffraction of X-rays are detected. Here, representing the rotation angle omega of when the diffracted X-rays 9 are detected with omega _B. Further, the value of omega _B in the irradiation region 7 (region A) and omega _{B (A).} In this specification, the ω dependence of the diffracted X-ray intensity is called a rocking curve.

When the single crystal substrate 5 is not warped, the sample stage 6 is moved in the X-axis direction while keeping the rotation angle ω _B (A), and as shown in FIG. Even if X-rays are irradiated to 25 (region B), the diffracted X-rays 9 are continuously detected by the X-ray detector 1. This is because the angle α formed by the surface of the region 25 and the wave vector 8 of the incident X-ray 4 remains the same as α _{B in} the region 7 and the region 25.

On the other hand, as shown in FIGS. 3 to 5, consider a case where the single crystal substrate 5 is warped upward. First, as shown in FIG. 3, the rotation angle ω _B when the irradiation region 26 (region C) is irradiated with the X-ray 4 is defined as ω _B (C). At this time, since the diffracted X-rays 9 are detected by the X-ray detector 1, the angle alpha between the wave vector 8 of the surface and the incident X-ray 4 irradiated region 26 (region C) is alpha _B.

Next, as shown in FIG. 4, with the rotation angle ω set to ω _B (C), the sample stage 6 is moved in the negative direction of the X axis parallel to the X axis, and the irradiation region 27 (region D). Is irradiated with X-rays 4. In this case, since the angle between the wave vector 8 of the irradiation region 27 (region D) in the surface and the incident X-ray 4 irradiated region 27 by warpage of the single-crystal substrate 5 (region D) alpha deviates from alpha _B, single Diffracted X-rays from the crystal substrate 5 are not detected by the X-ray detector 1.

In order to detect the diffracted X-rays 9 obtained when the irradiation region 27 (region D) is irradiated with X-rays, the surface of the irradiation region 27 (region D) and the incident X-ray 4 are detected as shown in FIG. it may be changed to the value of the rotational angle ω of the sample stage 6 as the angle between the wave vector 8 alpha is alpha _B. That is, the value of ω may be adjusted in a direction to cancel the change of α caused by the movement of the measurement point. Quantitatively, when the angle between the surface of the irradiation region 26 (region C) and the surface of the irradiation region 27 (region D) is Δθ ≧ 0,
ω = ω _B (C) + Δθ
= Ω _B (D) (1)
Then, the angle α formed by the surface of the irradiation region 27 (region D) and the wave vector 8 of the incident X-ray 4 becomes α _B , and the diffracted X-ray 9 is detected by the X-ray detector 1. From the above description, it is understood that the rotation angle ω when the diffracted X-ray 9 is detected changes due to the warp of the single crystal substrate 5.

  Here, when the equation (1) is modified, the following equation is obtained.

ω _B (D) −ω _B (C) = + Δθ (2)
If ω _B is measured in the irradiation region 27 (region D) and the irradiation region 26 (region C), the angle Δθ formed by the surfaces of the region C and the region D, that is, the change in the surface angle due to warpage is obtained from the change. It is shown that.

  Although the case where the single crystal substrate 5 is warped upward has been described above, the change of the angle formed by the surface can be measured by the same principle even when the single crystal substrate 5 is warped downward (explained) (Omitted). However, the rotation angle ω when warped downward and the angle Δθ formed by the surfaces of the region C and the region D are different from the above equations (1) and (2), respectively. (4)

ω = ω _B (C) −Δθ
= Ω _B (D) (3)
ω _B (D) −ω _B (C) = − Δθ (4)
Therefore, it is possible to determine the position of the codes of the change in the warp direction of the omega _B (convex downward convex or above).

  The above is the description of the principle of the method of measuring the warpage of the single crystal substrate using X-ray diffraction. Below, the example which actually performed the curvature determination using this is demonstrated.

  6A and 6B are a plan view and a side view of a sample used for measuring warpage of a single crystal substrate. As shown in FIGS. 6A and 6B, the sample 100 has a configuration in which a Si chip 11 made on the basis of a Si (001) single crystal substrate is pressure-bonded on a resin substrate 10. This sample 100 is a sample in the middle of the mounting process, and the surface of the resin substrate 10 is exposed to the air.

  FIG. 7 is a top view showing the relationship between the X-ray and the sample 100 during the experiment, particularly in the vicinity of the measurement sample. The schematic configuration of the X-ray diffractometer used in the experiment is the same as in FIG. In FIG. 7, incident X-rays 13 are incident on the Si chip 11 at an angle, whereby diffracted X-rays 14 are obtained. The slit width of the incident X-ray 13 is 0.5 mm × 0.1 mm. However, since the incident X-ray 13 is incident on the Si chip 11 at an angle, the X-ray irradiation region 12 on the Si chip 11 is approximately W1 × W2 = 0.5 mm × 0.2 mm region (region shown in white in FIG. 7).

Next, the actual measurement procedure will be described with reference to FIG. First, as shown in FIG. 8A, the sample 100 is set and irradiated with X-rays so that the irradiation region 12 at the end of the Si chip 11 is irradiated with X-rays. Thus, the rocking curve 15 is acquired to obtain ω _B.

Thereafter, as shown in FIG. 8C, the sample stage is translated by 0.1 mm in the X-axis direction, and the irradiated region 12 ′ after the movement is irradiated with X-rays in the same manner as described above, and FIG. get the rocking curve 16 as shown in to determine the ω _B. In this way, the two steps of “moving the sample stage by 0.1 mm along the X-axis direction” and “obtaining the rocking curve and obtaining ω _B ” are the sample ends where the measurement position is the measurement starting point. Repeat until the opposite end is reached.

Figure 9 shows the dependence of omega _B with respect to the position X on the Si chip thus obtained omega _{B (X).} In FIG. 9, ω _B (X) is an increasing function with respect to the position X except for the vicinity of the end of the Si chip, and it is considered that most of the Si chip is warped upward.

FIG. 10 shows the dependency Δω _B (X) of ω _B on the position X on the Si chip. Here, Δω _B (X) = ω _B (X) −ω _B (X = 0). As described above, since the change in ω _B (X) corresponds to the change in the angle of the single crystal substrate surface due to warping, Δω _B (X) is the value of the substrate surface at the position X measured with reference to the substrate surface where X = 0. It represents an angle.

Therefore, as shown in FIG. 11, when a schematic diagram of the cross section of the Si chip is drawn and the curve representing the substrate surface is expressed as z = f (X), the slope of f (X) is just tan (−Δω _B (X) ) =-Tan (Δω _B (X))
be equivalent to. The reason why the minus sign is attached is that Δω _B (X) is not the angle change itself of the substrate surface due to the warp but the amount obtained after adjusting the rotation angle ω of the sample stage so as to cancel it. .

From the above, the following equation for obtaining the curve f (X) representing the substrate surface in the sample cross-sectional view, that is, the amount of displacement in the z-axis direction of the sample surface at each point X, using the measured value Δω _B (X). The differential equation is obtained.

df / dX = −tan (Δω _B (X)) (5)
z = f (X) is obtained by the following equation that integrates this differential equation.

  Therefore, f (X), that is, a cross-sectional view of the sample can be obtained by performing integration using FIGS. 11 and (6). FIG. 12 shows a cross-sectional view of the sample thus obtained. The vertical axis represents the displacement corresponding to the displacement of the Si chip in the z direction. As shown in FIG. 12, the sample is convex upward as a whole, and the warpage amount (difference between the maximum value and the minimum value of z) of the entire substrate is about 70 μm.

  Table 1 is a table comparing the results of measuring warpage with the above-described method for samples having different warping directions and warpage amounts, and the results of measuring warpage using a surface roughness meter generally used for warpage measurement. Indicates. As can be seen from this table, there is a difference between the measurement results of 1.5 μm and 5 μm in absolute value, but the relationship between the direction of warpage and the amount of warpage between samples is between the two measurement methods. It agrees well. From this result, it is judged that the result of chip warpage measurement by X-ray diffraction is appropriate.

  What was shown above was the measurement result during the packaging process. That is, since the semiconductor chip is exposed, there is a simple warpage measurement method such as using a surface roughness meter, and warpage measurement using X-ray diffraction is not necessarily required. Below, the method of this invention which measures the curvature of the semiconductor chip of the state which finished the package process and was sealed by the package material is demonstrated.

Measurement of the warpage of a semiconductor chip sealed in a package material is difficult by a simple warpage measurement method such as using a surface roughness meter. On the other hand, in the warpage measurement using X-ray diffraction, the measurement of the warpage of the semiconductor chip sealed in the package material must be performed by measuring the X-ray diffraction through the package material. In general, when an X-ray having an intensity I ₀ enters a material and travels through the material, the X-ray is absorbed by the material, and the intensity attenuates exponentially with respect to the distance t. The X-ray intensity I (t) after traveling through the material by the distance t is expressed by the following equation.

I (t) = Io · exp [-μ m ρt] (7)
Here, [rho is the mass absorption coefficient of density, mu _m is X-ray materials. mu _m is dependent on the energy of the elements and the incident X-rays that make up the substance. That is in the mu _m is a greater tendency as elemental atomic number Z is high, the higher the energy E of the incident X-ray mu _m is small. These dependencies are approximately expressed as follows except for the vicinity of the absorption edge.

_{μ m = k (Z / E} ) 3 (8)
Here, k is a proportionality coefficient. Therefore, by using higher energy X-rays, the absorption of X-rays by the package material can be reduced, and as a result, X-ray diffraction measurement through the package material becomes possible.

FIGS. 13A and 13B schematically show a plan view and a cross-sectional view of an example of a sample in which diffracted X-ray acquisition is attempted through the package material by the non-destructive warpage measuring method for a single crystal substrate according to the present invention. Show. In the figure, a sample 30 has a structure in which a Si chip 32 made from a Si (001) substrate is mounted on a printed circuit board 31 and sealed with a mold (main component: SiO ₂ ) 33.

  FIG. 14 shows a schematic configuration diagram of an embodiment of a non-destructive warpage measuring apparatus for a single crystal substrate according to the present invention. In the figure, the same components as those in FIGS. 1 to 5 are denoted by the same reference numerals. In FIG. 14, the sample 30 shown in FIG. 13 is placed and fixed on the sample stage 6.

  In FIG. 14, X-rays 4 generated by an appropriate X-ray source 2 pass through an entrance slit 3 and pass through a mold 33 which is a package material of a sample 30 fixed on the sample stage 6 to form a single crystal substrate. The light enters the irradiation region of the Si chip 32. Thereby, diffracted X-rays are emitted from the irradiation region of the Si chip 32.

  When the rotation angle ω of the sample stage 6 measured from the direction of the wave vector 8 of the incident X-ray 4 is changed while the X-ray detector 1 is fixed, the Bragg condition is satisfied, that is, the irradiation region of the Si chip 32 is changed. When the angle α formed between the surface and the wave vector 8 of the incident X-ray 4 takes a specific value, X-ray crystal diffraction occurs, and the X-ray detector 1 detects the diffracted X-ray 9 transmitted through the mold 33. The

  Next, the rocking curve acquired by the X-ray detector 1 in this way will be described. FIG. 15 shows a rocking curve when a relatively low energy X-ray (CuKα characteristic X-ray, E = 8.05 keV) is used as the X-ray 4. If the diffracted X-ray ((004) reflection) from the Si chip 32 in FIG. 13 passes through the mold 33 and reaches the X-ray detector 1 in FIG. 14, the rotation angle ω of the sample stage 6 is around 34.56 °. A diffraction peak should be observed. However, a diffraction peak could not be observed due to absorption by the mold material.

FIG. 16 shows a rocking curve when an experiment similar to the above is performed using X-rays 4 with relatively high energy (MoKα characteristic X-rays, E = 17.5 keV). This rocking curve shows a diffraction peak when the rotation angle ω of the sample stage 6 is around 15.47 °. 16, sub-peak rotation angle of the sample stage 6 omega is observed around 15.57 ° is the diffraction peak due MoKarufa ₁ characteristic X-ray and slightly different wavelengths MoKarufa ₂ characteristic X-ray. This result shows that by using high-energy X-rays as the incident X-rays 4, the warpage measurement as described above with reference to FIGS. 1 to 12 can be performed without breaking the package.

  Thus, in this embodiment, it becomes possible to measure the warp (including stress) of the Si chip 32 sealed with the mold 33 through the mold 33 in a nondestructive manner. Therefore, the optimum mounting material and process based on this can be measured. And development of high performance and high reliability products can be promoted.

  In the above embodiment, MoKα characteristic X-rays are used as the incident X-rays. However, if the X-rays have such energy that can measure the diffracted X-rays from the Si chip 32 through the mold 33, the incident X-rays are used. The line 4 may not be a MoKα characteristic X-ray.

  When experimenting with a lab-scale diffractometer, characteristic X-rays are suitable as a source, but as an appropriate and realistic source for the above purposes, X-rays above about 10 keV are preferred for energy. . Examples of such X-rays include ZnKα characteristic X-rays, RhKα characteristic X-rays, PdKα characteristic X-rays, AgKα characteristic X-rays, MoKα characteristic X-rays, and WKα characteristic X-rays. Further, X-rays obtained from the acceleration motion of charged particles, for example, X-rays obtained from synchrotron radiation, may be used as long as the energy is appropriate.

  Further, although the detected diffracted X-rays are (004) reflection, diffracted X-rays from other grating surfaces may be used. For example, system reflection of (004) reflection such as (008), (0012), or asymmetric reflection such as (113) reflection may be used.

  The substrate on which the chip is based may be other than the (001) substrate 31. Even if the substrate is a (011) substrate, a (111) substrate, or another substrate having a plane index parallel to the surface, the same measurement can be performed by appropriately selecting the diffracted X-rays to be detected.

  Further, in the above embodiment, the measurement sample is the Si chip 32. However, as is clear from the above description, it may be a single crystal substrate, may be a compound semiconductor such as GaAg, or the like. A single crystal substrate may be used.

  In the above embodiment, the energy of incident X-rays is increased in order to transmit the mold 33. However, the energy increase of incident X-rays is higher than that of MCP or SiP in which a plurality of semiconductor chips are stacked. Creates the possibility of detecting diffracted X-rays from a plurality of semiconductor chips at once.

Therefore, the present inventor attempted to acquire a diffraction spectrum through a mold from a sample in which three Si chips were laminated using MoKα characteristic X-rays as incident X-rays. FIGS. 17A and 17B schematically show a plan view and a cross-sectional view of the sample 40 in this case. As shown in FIG. 17B, the sample 40 has three stacked Si chips 42 made from a Si (001) substrate mounted on a printed circuit board 41, and this is molded (main component: SiO _2). ) SiP product having a structure sealed at 43. This sample 40 is similar to the sample 30 shown in FIG. 13, but is characterized in that three Si chips 42 are laminated as can be seen from the cross-sectional view shown in FIG.

  FIG. 18 shows a schematic configuration diagram of another embodiment of a non-destructive warpage measuring apparatus for a single crystal substrate according to the present invention. In the figure, the same components as those in FIGS. 1 to 5 are denoted by the same reference numerals. 18, the sample 40 shown in FIG. 17 is placed and fixed on the sample stage 6.

In FIG. 18 , high energy X-rays 4 (here, as an example, MoKα characteristic X-rays) generated by an appropriate X-ray source 2 pass through the entrance slit 3 and are a package of the sample 40 fixed on the sample stage 6. The light passes through the mold 43 that is the material and enters the irradiation region of the three Si chips 42 stacked. Thereby, diffracted X-rays are emitted from the irradiation region of the Si chip 42.

  When the rotation angle ω of the sample stage 6 measured from the direction of the wave vector 8 of the incident X-ray 4 is changed while the X-ray detector 1 is fixed, the Bragg condition is satisfied, that is, the irradiation region of the Si chip 42 is changed. When the angle α formed by the surface and the wave vector 8 of the incident X-ray 4 takes a certain value, X-ray crystal diffraction occurs, and the X-ray detector 1 detects the diffracted X-ray 9 transmitted through the mold 43. The

Next, the rocking curve acquired by the X-ray detector 1 in this way will be described. FIG. 19 shows an example of a rocking curve acquired by the configuration of FIG. Assuming that the diffraction peak has a Lorentz distribution, when peak separation is performed on the measurement values indicated by white circles, a solid line in FIG. 19 is obtained. The separated curves are composed of six peaks in total, but since the peak due to the Kα ₁ line and the peak due to the Kα ₂ line are a pair, there are three independent peaks. Therefore, it is determined that the diffracted X-rays from the three stacked Si chips 42 are observed in one rocking curve.

  In FIG. 19, there is a region of ω in which the difference between the peak obtained by peak separation and the measured value is large. This is because the assumption that the diffraction peak has a Lorentz distribution is not strictly correct, and the layers were stacked. The result that the diffracted X-rays 9 were observed from the three Si chips 42 remains unchanged.

  The above results show that, by using high energy X-rays as incident X-rays 4, warpage measurement can be performed on individual Si chips among the three Si chips 42 stacked in the package 43. It shows that there is.

  Thus, in this embodiment, it becomes possible to measure the warp (including stress) of the individual Si chips of the three stacked Si chips 42 sealed with the mold 43 through the mold 43 in a nondestructive manner. Based on this, it is possible to optimize the mounting materials and processes, and it is possible to promote the development of high-performance and highly reliable products such as SiP products.

  In the above embodiment, the SiK product in which the three Si chips 42 are stacked is measured using the MoKα characteristic X-ray. However, the material of the semiconductor chip may be other than Si and may be a single crystal substrate. .

  Further, the incident X-ray 4 may be other than the MoKα characteristic X-ray as long as it has sufficient energy to pass through a desired number of single crystal substrates and detect diffracted X-rays. Examples of the X-ray include the already described ZnKα characteristic X-ray, RhKα characteristic X-ray, PdKα characteristic X-ray, AgKα characteristic X-ray, MoKα characteristic X-ray, and WKα characteristic X-ray. The incident X-ray 4 may be an X-ray obtained from the acceleration motion of charged particles, for example, an X-ray obtained from synchrotron radiation. That is, an appropriate X-ray source 2 should be selected in consideration of the type of the target single crystal substrate, the number of substrates to be transmitted, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS It is the figure (the 1) which shows the outline of the means and structure used with the X-ray-diffraction method used as the basis of the nondestructive curvature measuring method of the single crystal substrate of this invention, and an X-ray ray diagram. It is the figure (the 2) which shows the outline of the means and structure used with the X-ray-diffraction method used as the basis of the nondestructive curvature measuring method of the single crystal substrate of this invention, and an X-ray ray diagram. It is the figure (the 3) which shows the outline of the means and structure used with the X-ray-diffraction method used as the basis of the nondestructive curvature measuring method of the single crystal substrate of this invention, and an X-ray ray diagram. It is the figure (the 4) which shows the outline of the means and structure used with the X-ray-diffraction method used as the basis of the nondestructive curvature measuring method of the single crystal substrate of this invention, and an X-ray ray diagram. It is the figure (the 5) which shows the outline of the means and structure used with the X-ray-diffraction method used as the basis of the nondestructive curvature measuring method of the single crystal substrate of this invention, and an X-ray ray diagram. It is a schematic diagram of an example of the sample which performed the curvature measurement in FIGS. It is a schematic diagram which shows an example of the positional relationship of the irradiation area | region and sample of incident X-ray | X_line, a diffraction X-ray | X_line, and an X-ray. It is explanatory drawing of the measurement procedure of the curvature measurement of this invention. It is a figure which shows the sample position dependence of rotation angle (omega) _B of the sample stage measured by the curvature measuring method shown in FIGS. It is a figure which shows the sample position dependence of (DELTA) (omega) _B measured by the curvature measuring method shown in FIGS. It is a figure which shows the curve showing the board | substrate surface in sample cross section. It is a figure which shows an example of the cross section of Si chip | tip measured by the curvature measuring method shown in FIGS. It is the schematic diagram of an example of the sample which tried acquisition of the diffraction X-ray with the nondestructive curvature measuring method and measuring apparatus of the single crystal substrate of this invention. It is a schematic block diagram of one Embodiment of the nondestructive curvature measuring apparatus of the single crystal substrate of this invention. FIG. 15 is a diagram showing an example of a rocking curve obtained through the package material using CuKα characteristic X-rays for the sample shown in FIG. 13 in the measurement apparatus shown in FIG. 14. FIG. 15 is a diagram illustrating an example of a rocking curve obtained through the package material using MoKα characteristic X-rays for the sample illustrated in FIG. 13 in the measurement apparatus illustrated in FIG. 14. It is a schematic diagram of the other example of the sample which tried acquisition of the diffraction X-ray with the nondestructive curvature measuring method and measuring apparatus of the single crystal substrate of this invention. It is a schematic block diagram of other embodiment of the nondestructive curvature measuring apparatus of the single crystal substrate of this invention. FIG. 19 is a diagram illustrating an example of a rocking curve obtained through the package material using MoKα characteristic X-rays for the sample illustrated in FIG. 17 in the measurement apparatus illustrated in FIG. 18.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 X-ray detector 2 X-ray source 3 Incident slit 4, 13 Incident X-ray 5 Single crystal substrate 6 Sample stage 7, 12, 12 ', 25, 26, 27 Irradiation area 8 Wave vector of incident X-ray 9, 14 Diffraction X-ray 10 Resin substrate 11, 32 Si chip 15, 16 Rocking curve 30 Sample 31 including Si chip packaged in mold Printed circuit board 33, 43 Mold 40 Three stacked Si chips packaged in mold 40 Including sample (SiP product)
42 Three stacked Si chips

Claims (12)

An irradiation step of irradiating a component obtained by sealing a plurality of single crystal substrates stacked on a single printed board together with the printed board with a package material,
It is detected by performing the peak separation in a single rocking curve in the packaging material over the diffracted X-rays from each of the single crystal substrate, measuring the respective warp before Symbol plurality of single crystal substrate in a non-destructive And a non-destructive warpage measuring method for a single crystal substrate, comprising: The detection / measurement step includes
A detection step of obtaining a rocking curve from the single crystal substrate and detecting diffracted X-rays from the single crystal substrate;
Nondestructive method of measuring warpage single crystal substrate according to claim 1 Symbol placement and repeating the moving steps of a predetermined distance moves the parts to the opposite end from the one end of the component. The irradiation step is a non-destructive method of measuring warpage single crystal substrate according to claim 1 Symbol mounting, characterized in that a step of irradiating the X-rays having an energy higher than 10keV to said component. 4. The nondestructive warpage measurement of a single crystal substrate according to claim 3, wherein the X-ray having an energy of 10 keV or more is an X-ray obtained from any one of Zn, Rh, Pd, Ag, Mo and W. Method. 4. The method for measuring a non-destructive warpage of a single crystal substrate according to claim 3, wherein the X-ray having an energy of 10 keV or more is an X-ray obtained by acceleration motion of charged particles. 6. The method for measuring non-destructive warpage of a single crystal substrate according to claim 5 , wherein the X-rays obtained by the acceleration motion of the charged particles are X-rays obtained from synchrotron radiation of the charged particles. Irradiation means for irradiating X-rays on a component in which a plurality of single crystal substrates stacked on a single printed board are sealed together with the printed board with a package material;
It is detected by performing the peak separation in a single rocking curve in the packaging material over the diffracted X-rays from each of the single crystal substrate, measuring the respective warp before Symbol plurality of single crystal substrate in a non-destructive A non-destructive warpage measuring apparatus for a single crystal substrate, characterized by comprising: The detection / measurement means includes:
Detecting means for acquiring a rocking curve from the single crystal substrate and detecting diffracted X-rays from the single crystal substrate;
Nondestructive warpage measuring apparatus of the single-crystal substrate according to claim 7 Symbol mounting and repeating and moving means for a predetermined distance moves the parts to the opposite end from the one end of the component. Said illumination means, nondestructive warpage measuring apparatus of the single-crystal substrate according to claim 7 Symbol mounting, characterized in that the X-ray is a means for irradiating the part with a more energy 10 keV. The X-ray having energy higher than 10keV is, Zn, Rh, Pd, Ag , nondestructive warpage of the single crystal substrate according to claim 9 Symbol mounting, characterized in that an X-ray obtained from any of Mo and W measuring device. The X-ray having energy higher than 10keV is nondestructive warpage measuring apparatus of the single-crystal substrate according to claim 9 Symbol mounting, characterized in that an X-ray obtained by the acceleration motion of charged particles. 12. The apparatus for measuring a non-destructive warpage of a single crystal substrate according to claim 11 , wherein the X-ray obtained by the acceleration motion of the charged particle is an X-ray obtained from synchrotron radiation of the charged particle.

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