JP5354906B2 - Nickel-based semi-finished product having a cubic texture and its manufacturing method - Google Patents
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Abstract
Description
本発明は、立方体集合組織を有するニッケルベースの半製品及びその製造方法に関する。この半製品は、高度な立方体集合組織を有する絶縁性酸化ニッケル層を、前記半製品の表面上に成長させるという可能性を提供し、前記層は、基礎材料と、後で施与されうるコーティング、例えば超伝導体層との間の緩衝層として作用する。 The present invention relates to a nickel-based semi-finished product having a cubic texture and a method for producing the same. This semi-finished product offers the possibility of growing an insulating nickel oxide layer with a high cubic texture on the surface of the semi-finished product, the layer comprising a base material and a coating that can be applied later For example, it acts as a buffer layer between the superconductor layers.
技術水準
面心立方格子を有する多結晶金属、例えばニッケル及び銅が、圧延による先行する強い冷間成形後に、その後の再結晶の際に立方体層(Wuerfellage)を有する特徴ある集合組織を形成しうることは知られている(G. Wassermann: Texturen metallischer Werkstoffe, Springer, Berlin, 1939)。このようにして集合組織化された金属テープ、特にニッケルテープは、金属被膜、セラミック緩衝層及びセラミック超伝導体層用の支持体(Unterlage)としても利用される(米国特許(US)第5,741,377号明細書)。その場合に、基体原料としてのそのような金属テープの適性は、集合組織の達成可能度及びコーティングプロセスが行われる温度の範囲内で集合組織の安定性に決定的に依存する。
State of the art Polycrystalline metals with face-centered cubic lattice, such as nickel and copper, can form a characteristic texture with a cubic layer (Wuerfellage) upon subsequent recrystallization after strong cold forming by rolling This is known (G. Wassermann: Texturen metallischer Werkstoffe, Springer, Berlin, 1939). The textured metal tape, in particular nickel tape, is also used as a support for metal coatings, ceramic buffer layers and ceramic superconductor layers (US Pat. No. 5,741,377). Specification). In that case, the suitability of such a metal tape as a substrate raw material depends critically on the texture achievability and the texture stability within the temperature range at which the coating process takes place.
Ni−Cr、Ni−Cr−V、Ni−Cu及び類似の合金からなり、高温超伝導体を製造するための立方体集合組織を有する半製品は、既に知られている(米国特許(US)第5,964,966号明細書;米国特許(US)第6,106,615号明細書)。しかしながら、これらのニッケル基合金は、前記合金表面上に、立方体集合組織を有するエピタキシャル酸化ニッケルを成長させるために適していない。同じことは工業用純度のニッケルにあてはまり、前記ニッケル中の化学的不純物が酸化物膜の成長において妨害を引き起こす。百分率範囲内のモリブデン又はタングステンで合金化されているニッケル(独国特許(DE-C1)第100 05 861号明細書)も、酸化ニッケルのエピタキシャル成長に適していない。 Semi-finished products made of Ni-Cr, Ni-Cr-V, Ni-Cu and similar alloys and having a cubic texture for producing high temperature superconductors are already known (US Pat. No. 5,964,966; U.S. Pat. No. 6,106,615). However, these nickel-based alloys are not suitable for growing epitaxial nickel oxide having a cubic texture on the alloy surface. The same applies to industrial purity nickel, where chemical impurities in the nickel cause interference in the growth of oxide films. Nickel alloyed with molybdenum or tungsten in the percentage range (DE-C1 100 05 861) is also not suitable for the epitaxial growth of nickel oxide.
公知の半製品は次の欠点を有する:
工業用純度を有するニッケルは、冷間成形及び再結晶焼きなまし後に、粗大な粒構造を形成する強い傾向があり、前記粒構造は高度な立方体集合組織の達成に不利である。そのうえ、ppm範囲内の不純物は、特に酸化ニッケル形成のより高い温度(850...1200℃)で、粒界溝を形成する強い傾向を引き起こす。粒界溝を有する基体材料は、エピタキシャル層堆積(例えば緩衝層、超伝導体層)用の支持体としてあまり適していない。Ni−Cr、Ni−Cr−V、Ni−Cu、Ni−Mo又はNi−Wからなり、より高度に合金化されたテープ中で、確かに高度な立方体集合組織が達成されることができるが、しかしNiOの膜成長は甚だしく妨げられるので、そのような合金は合金元素の妨害する影響に基づいて酸化の際に不十分にのみ二軸成長し、ひいてはエピタキシャル層堆積(例えば緩衝層、超伝導体層)用の基体材料としてあまり適していない。また、既に、立方体集合組織を有するNi酸化物を成長させる可能性を提供する、ミクロ合金範囲内でAg添加剤を有するNi原料も提案されていた(独国特許出願(DE) 103 42 965.4号)。しかしこの原料は比較的高価である。
Known semi-finished products have the following disadvantages:
Nickel with industrial purity has a strong tendency to form a coarse grain structure after cold forming and recrystallization annealing, which is disadvantageous for achieving a high cubic texture. Moreover, impurities in the ppm range cause a strong tendency to form grain boundary grooves, especially at the higher temperature of nickel oxide formation (850 ... 1200 ° C.). Substrate materials having grain boundary grooves are not well suited as supports for epitaxial layer deposition (eg, buffer layers, superconductor layers). In a more highly alloyed tape consisting of Ni-Cr, Ni-Cr-V, Ni-Cu, Ni-Mo or Ni-W, certainly a high cubic texture can be achieved. However, since the film growth of NiO is severely hindered, such alloys grow biaxially only during oxidation due to the disturbing effects of the alloying elements and thus epitaxial layer deposition (eg buffer layers, superconductivity) It is not very suitable as a base material for the body layer. In addition, a Ni raw material having an Ag additive in the range of microalloys has already been proposed which provides the possibility of growing Ni oxides having a cubic texture (German Patent Application (DE) 103 42 965.4). ). However, this raw material is relatively expensive.
発明の開示
本発明の課題は、技術水準の欠点が取り除かれているニッケルベースの半製品を作り出すことである。
DISCLOSURE OF THE INVENTION An object of the present invention is to create a nickel-based semi-finished product that eliminates the state of the art drawbacks.
この課題は、特許請求の範囲において特徴付けられた特徴を用いて解決される。 This problem is solved with the features characterized in the claims.
本発明による半製品は、再結晶立方体集合組織を有し、かつ元素の周期表の第3副族の金属の添加剤を有する工業用純度のニッケル又はニッケル合金からなる。その場合に、添加剤最大600原子ppm及び最小10原子ppmが原料中に含まれている。 The semi-finished product according to the invention consists of nickel or nickel alloy of industrial purity having a recrystallized cubic texture and having an additive of a metal of the third subgroup of the periodic table of elements. In that case, the additive contains a maximum of 600 atomic ppm and a minimum of 10 atomic ppm in the raw material.
金属添加剤は、好ましくはイットリウム及び/又はセリウムであってよい。 The metal additive may preferably be yttrium and / or cerium.
本発明の有利な一実施態様によれば、原料表面上に立方体集合組織を有する酸化ニッケル層が存在する。 According to one advantageous embodiment of the invention, there is a nickel oxide layer having a cubic texture on the raw material surface.
半製品の製造については、本発明によれば、まず最初に溶融冶金学的又は粉末冶金学的な経路で又は機械的な合金化により合金が製造され、かつこの合金が、その後の高度な冷間成形を伴う熱間成形を用いて、>80%の厚さ減少によりテープ、ホイル又はフラットワイヤーに加工されることが意図されている。最後に、前記原料は、立方体集合組織を達成するために再結晶焼きなましにかけられる。 For the production of semi-finished products, according to the invention, an alloy is first produced by the melt metallurgical or powder metallurgical route or by mechanical alloying, and this alloy is then subjected to a high degree of cooling. It is intended to be processed into tape, foil or flat wire with a thickness reduction of> 80% using hot forming with hot forming. Finally, the raw material is subjected to recrystallization annealing to achieve a cubic texture.
特に有利には、Niベース原料上に酸化雰囲気中で高度な立方体集合組織(>90%)を有する酸化ニッケル層が製造されることができる。 Particularly advantageously, a nickel oxide layer having a high cubic texture (> 90%) in an oxidizing atmosphere on a Ni-based raw material can be produced.
これは、ニッケルへの本発明による合金添加剤により可能になる。そのうえ、前記合金添加剤は、成長条件を改善する粉末度を生じさせる。 This is made possible by the alloy additive according to the invention to nickel. Moreover, the alloy additive produces a fineness that improves the growth conditions.
本発明による半製品は、工業用純度のニッケル及び前記ニッケルをベースとするその他の合金からなる半製品と比較して同価値の又はより良好な立方体集合組織を有し、かつ支持体として物理化学的なコーティングに、例えば層超伝導体に、使用可能である。前記半製品は、好ましくは、高度な立方体集合組織を有する絶縁性酸化ニッケル層を、前記半製品の表面上に成長させるという可能性を提供し、前記層は、基礎材料と、後で施与されうる超伝導体層との間の緩衝層として作用する。この酸化物層は大体において、集合組織化された基体の合金に制約されたより微細な粒構造を引き受け(uebernimmt)、かつそれにより酸化ニッケル成長のための明らかにより好都合な必要条件を得る。 The semi-finished product according to the present invention has a cubic texture equivalent to or better than that of semi-finished products made of industrial purity nickel and other alloys based on said nickel, and has a physical chemistry as support Can be used for typical coatings, for example, layer superconductors. The semi-finished product preferably offers the possibility of growing an insulating nickel oxide layer with a high degree of cubic texture on the surface of the semi-finished product, the layer being applied to the base material and later applied Acting as a buffer layer between the superconductor layers that can be made. This oxide layer generally assumes a finer grain structure constrained by the textured substrate alloy, and thereby obtains a clearly more favorable requirement for nickel oxide growth.
本発明は次に、実施例に基づいてより詳細に説明されている。 The invention will now be described in more detail on the basis of examples.
図の簡単な説明
図1は、以下の例2によるイットリウム添加剤を有するニッケル原料について上方で、EBSD(電子後方散乱回折)を用いて調べられた方位マッピングを示す。その中で、立方体方位に関する粒方位の頻度分布を有する帰属する図表が示されている。図1は、集合組織形成の際のイットリウムの有利な作用の証拠として役立つ。
BRIEF DESCRIPTION OF THE FIGURES FIG. 1 shows an orientation mapping investigated using EBSD (Electron Back Scattering Diffraction) above a nickel source with an yttrium additive according to Example 2 below. Among them, an attached chart having a frequency distribution of the grain orientation with respect to the cube orientation is shown. FIG. 1 serves as proof of the beneficial effects of yttrium during texture formation.
図2は、以下の例2によるイットリウム添加剤を有するニッケル原料について上方で、同様にEBSDを用いて調べられた、ニッケル原料上に存在している酸化ニッケル層の方位マッピングを示す。その中で、酸化ニッケル中の立方体方位に関する粒方位の頻度分布を有する帰属する図表が示されている。図2は、生じた酸化ニッケル中の集合組織へのイットリウムの有利な作用の証拠として役立つ。 FIG. 2 shows the orientation mapping of the nickel oxide layer present on the nickel source, as above, similarly investigated using EBSD for the nickel source with the yttrium additive according to Example 2 below. Among them, an attribution chart having a frequency distribution of grain orientations with respect to the cubic orientation in nickel oxide is shown. FIG. 2 serves as evidence of the beneficial effect of yttrium on the texture in the resulting nickel oxide.
発明の実施態様
例1
例えばニッケル99.9原子%の純度を有する、工業用純度のニッケルを溶融させ、セリウム33原子ppmと合金化しながら鋳型へ流し込む。インゴットを、850℃で正方形寸法(22x22)mm2に圧延し、均一化焼きなましをし、かつ急冷する。引き続いて、正方形材料を、圧延によるその後の冷間成形のための欠陥のない表面を得るために、切削により仕上げる。冷間圧延を、まず最初に85%を上回る厚さ減少の圧延度(Abwalzgrad)で、20mmから出発して80μmの厚さまで実施し、この場合に99.6%の厚さ減少である。その後の550℃で30minにわたる焼もどし処理は、立方体集合組織を有する再結晶を生じさせ、その際に(111)極点図の半値全幅(FWHM)値は、以下に示された表から明らかであるように、6.6°である。この集合組織鮮鋭度は、純度99.9%のニッケルに比較して1°を上回るだけ改善されている。次に、酸素下に1150℃で2分間、短時間酸化させ、かつ冷却する。生じた酸化ニッケル膜は、同様に鮮鋭な立方体集合組織を有する。(111)極点図のFWHM値はそれどころか5.4°であるに過ぎない(表参照)。第1表は、立方体集合組織形成に関してイットリウム及びセリウムの合金作用の証拠として役立つ。
Embodiment 1 of the Invention
For example, nickel of industrial purity having a purity of 99.9 atomic% nickel is melted and poured into a mold while alloying with 33 atomic ppm of cerium. The ingot is rolled to a square dimension (22 × 22) mm 2 at 850 ° C., homogenized, and quenched. Subsequently, the square material is finished by cutting in order to obtain a defect-free surface for subsequent cold forming by rolling. Cold rolling is first carried out at a thickness reduction of more than 85% (Abwalzgrad) starting from 20 mm to a thickness of 80 μm, in this case a thickness reduction of 99.6%. Subsequent tempering at 550 ° C. for 30 min results in recrystallization with a cubic texture, with the full width at half maximum (FWHM) value of the (111) pole figure apparent from the table shown below. Thus, it is 6.6 °. This texture sharpness is improved by more than 1 ° compared to 99.9% pure nickel. Next, it is oxidized for a short time at 1150 ° C. for 2 minutes under oxygen and cooled. The resulting nickel oxide film has a sharp cubic texture as well. On the contrary, the FWHM value of the (111) pole figure is only 5.4 ° (see table). Table 1 serves as evidence of yttrium and cerium alloying with respect to cube texture formation.
表
工業用純度のニッケル、Y−又はCe−合金化されたニッケル及びY−又はCe−合金化されたニッケル上のNiOの立方体集合組織のFWHM(111)値。
Table FWHM (111) values of cubic texture of NiO on industrial purity nickel, Y- or Ce-alloyed nickel and Y- or Ce-alloyed nickel.
例2
例えばニッケル99.9原子%の純度を有する、工業用純度のニッケルを、イットリウム33原子ppmと合金化しながら真空誘導炉中で溶融させ、鋳型へ流し込む。インゴットを、均一化焼きなましをし、水中で急冷し、850℃で正方形寸法(22×22)mm2に圧延する。引き続いて、正方形材料を、その後の冷間成形のための欠陥のない表面を圧延により得るために、切削により仕上げる。冷間圧延を、85%を上回る厚さ減少の圧延度で実施し、この場合に99.6%である。生じるニッケルテープは80μmの厚さを有する。このニッケルテープを次に550℃で30minにわたり焼もどしする。
Example 2
For example, nickel of industrial purity having a purity of 99.9 atomic% nickel is melted in a vacuum induction furnace while being alloyed with 33 atomic ppm of yttrium and poured into a mold. The ingot is homogenized, quenched in water, and rolled at 850 ° C. to square dimensions (22 × 22) mm 2 . Subsequently, the square material is finished by cutting in order to obtain a defect-free surface by rolling for subsequent cold forming. Cold rolling is carried out with a rolling reduction with a thickness reduction of more than 85%, in this case 99.6%. The resulting nickel tape has a thickness of 80 μm. The nickel tape is then tempered at 550 ° C. for 30 minutes.
結果は、再結晶立方体集合組織であり(図1参照)、粒方位についての前記再結晶立方体集合組織の分布は、5°を幾分下回る最大を有する。立方体層を有する粒子の割合(<10°偏差)は98%であり、かつ小角度粒界の割合(<9.5°偏差)は92%である。粒度は、純ニッケルの場合の大きさの約半分に過ぎない約42μmを有する。引き続いて、前記テープを純酸素ガス中で1150℃で2分間の酸化にかける。生じた酸化ニッケル層は、立方体層を有する構造を有する。立方体方位を有する粒子の割合は、97%である(図2)。小角度粒界の割合は、96%である。この集合組織は、ニッケルテープの集合組織に対して45°だけ回転している(gedreht)。 The result is a recrystallized cube texture (see FIG. 1) and the distribution of the recrystallized cube texture with respect to grain orientation has a maximum somewhat below 5 °. The proportion of particles with a cubic layer (<10 ° deviation) is 98% and the proportion of small angle grain boundaries (<9.5 ° deviation) is 92%. The particle size has about 42 μm, which is only about half that of pure nickel. Subsequently, the tape is subjected to oxidation in pure oxygen gas at 1150 ° C. for 2 minutes. The resulting nickel oxide layer has a structure with a cubic layer. The proportion of particles having a cubic orientation is 97% (FIG. 2). The proportion of small angle grain boundaries is 96%. This texture is rotated by 45 ° with respect to the texture of the nickel tape (gedreht).
例3
工業用純度のニッケル粉末を、セリウム100原子ppmを添加しながら粉末冶金的に加工する。プレス、熱処理及び押出と圧延とによる熱間成形後に、(22x22)mm2のロッド材料が得られる。均一化焼きなまし後に、圧延又は圧延引抜(Walzziehen)によるその後の冷間成形のための欠陥のない表面を得るために、表面を切削により仕上げる。冷間成形を、約(20×20)mm2から出発して3mmの厚さまで実施する。次に850℃で15minにわたり焼もどしする。その後、厚さ80μmの完成寸法に冷間圧延する。テープの縁部領域は分離され、かつ反る(verworfen)。得られたニッケルテープを、引き続いて、まず最初に、還元雰囲気中で再結晶化のために850℃で30分間の焼きなまし処理にかける。その後、テープを、高度な立方体集合組織を有する酸化ニッケル膜を製造するために、第二の焼きなましにおいて酸化雰囲気中で1150℃で5分にわたり処理する。
Example 3
Industrial purity nickel powder is processed in powder metallurgy while adding 100 atomic ppm of cerium. After hot forming by pressing, heat treatment and extrusion and rolling, a rod material of (22 × 22) mm 2 is obtained. After uniform annealing, the surface is finished by cutting in order to obtain a defect-free surface for subsequent cold forming by rolling or rolling (Walzziehen). Cold forming is carried out starting from about (20 × 20) mm 2 to a thickness of 3 mm. Then temper at 850 ° C. for 15 min. Then, it cold-rolls to the finished dimension of thickness 80micrometer. The edge area of the tape is separated and verworfen. The nickel tape obtained is subsequently subjected to an annealing treatment at 850 ° C. for 30 minutes for recrystallization in a reducing atmosphere. The tape is then treated for 5 minutes at 1150 ° C. in an oxidizing atmosphere in a second annealing to produce a nickel oxide film with a high degree of cubic texture.
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PCT/EP2005/056799 WO2006064030A1 (en) | 2004-12-14 | 2005-12-14 | Semifinished product based on nickel and having a cubic texture, and method for the production thereof |
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DE102010031058A1 (en) * | 2010-07-07 | 2012-01-12 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Metallic profile wire with recrystallization cube texture and process for its production |
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US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
DE10148889A1 (en) * | 2001-09-21 | 2003-06-26 | Leibniz Inst Fuer Festkoerper | Nickel-based carrier material and process for its production |
DE10342965A1 (en) * | 2003-09-10 | 2005-06-02 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Nickel-based semifinished product with a recrystallization cube texture and process for its production |
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2004
- 2004-12-14 DE DE200410060900 patent/DE102004060900A1/en not_active Ceased
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2005
- 2005-12-14 JP JP2007546060A patent/JP5354906B2/en not_active Expired - Fee Related
- 2005-12-14 WO PCT/EP2005/056799 patent/WO2006064030A1/en active Application Filing
- 2005-12-14 EP EP05823780A patent/EP1828425A1/en not_active Withdrawn
Also Published As
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DE102004060900A1 (en) | 2006-06-29 |
JP2008523252A (en) | 2008-07-03 |
EP1828425A1 (en) | 2007-09-05 |
WO2006064030A1 (en) | 2006-06-22 |
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