JP5348216B2 - Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 - Google Patents
Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 Download PDFInfo
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| JP2011230895A JP5348216B2 (ja) | 2011-10-20 | 2011-10-20 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| JP2011230895A JP5348216B2 (ja) | 2011-10-20 | 2011-10-20 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| JP2009228894A Division JP5397136B2 (ja) | 2009-09-30 | 2009-09-30 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| JP2012015563A JP2012015563A (ja) | 2012-01-19 |
| JP2012015563A5 JP2012015563A5 (https=) | 2012-11-08 |
| JP5348216B2 true JP5348216B2 (ja) | 2013-11-20 |
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| JP2011230895A Expired - Fee Related JP5348216B2 (ja) | 2011-10-20 | 2011-10-20 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| JP2008187044A (ja) * | 2007-01-30 | 2008-08-14 | Rohm Co Ltd | 半導体レーザ |
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