JP5343838B2 - Thin film manufacturing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film production apparatus with which a dopant concentration is detected with high accuracy, and which has high product management ability. <P>SOLUTION: The thin film production apparatus 1 includes: a first deposition chamber 13a to a third deposition chamber 13c which are installed from the upstream side to the downstream side of a transfer direction of a film substrate 10 and in which a thin film is formed on the film substrate 10 under the reduced pressure; and a first sampling chamber 14a and a second sampling chamber 14b which are installed adjacent to the downstream side of the first deposition chamber 13a to the third deposition chamber 13c. The film substrate 10 on which a first thin film layer 41 has been formed in the first deposition chamber 13a is carried into the first sampling chamber 14a, and a sample is extracted from the film substrate 10 under the reduced pressure. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a thin film manufacturing apparatus for forming a thin film on a flexible film substrate or the like.

  In recent years, a thin film device obtained by forming a thin film on a film substrate or forming a device in the field of an organic transistor, an organic EL display, a thin film solar cell, and the like has attracted attention. A thin film device using a film substrate is thin and lightweight, and has high flexibility. Therefore, it is easy to increase the area, and the manufacturing cost can be reduced, which is advantageous in terms of mass production.

  A thin film device using a film substrate is manufactured by laminating nano-order thin films on a film substrate and injecting a small amount of impurities (dopant) into each thin film layer according to desired electronic device characteristics. As an example of a thin film device using a film substrate, a thin film solar cell manufactured by a stepping roll method has been proposed (see, for example, Patent Document 1).

  Such a thin-film solar cell is manufactured by a thin-film manufacturing apparatus that continuously forms a film by transporting a film substrate to 10 or more film forming chambers in a roll-to-roll manner. Each film formation chamber of the thin film manufacturing apparatus is configured so that film formation under a different condition and injection of a trace amount of dopant can be performed. The thin film solar cell described in Patent Document 1 can be mass-produced by continuous production as compared with a conventional glass substrate type solar cell in which a film formation layer is laminated on a glass substrate one by one, and has a width of 50 cm and a length of 1 Thin-film solar cells with a large area of kilometers to 2 kilometers are being manufactured.

JP 2003-318425 A

  By the way, the electronic device characteristics of the thin film device change depending on the film thickness, composition, film structure (bonded state, crystal structure), trace dopant concentration, and the like of the formed thin film layer. For this reason, product management in a thin film manufacturing apparatus is important for mass production of thin film devices with stable electronic device characteristics. In particular, the dopant concentration of each thin film layer of the thin film device is one of the main factors that influence the electronic device characteristics of the thin film device. In thin film manufacturing equipment, the success or failure of implanting a small amount of dopant within the design standard into each thin film layer. This is important for product management of thin film devices.

  In general, a small amount of dopant concentration in each thin film layer of a thin film device is detected by irradiating the sample surface with a small bundle of primary ion beams and mass analysis (MS) SIMS (Secondary Ion Mass Spectrometry) is used. In the thin film device, the concentration of each element of the trace amount dopant in each thin film layer is measured by SIMS on the order of ppm to ppb.

  However, in a thin film device in which a plurality of thin film layers are laminated, when a high dopant concentration thin film layer and a low dopant concentration thin film layer are laminated, the analysis value of the high dopant concentration thin film layer is a low dopant concentration thin film. The analysis value of the layer was affected, and there was a problem that the dopant concentration of the thin film layer having a low dopant concentration could not be measured accurately.

  On the other hand, in a thin film manufacturing apparatus that stacks a plurality of thin film layers, the film formation conditions for each thin film layer are individually examined under the conditions for forming a single layer film on a film substrate, and the film formation conditions for obtaining a desired dopant concentration are determined. Manufacturing thin film devices in combination is also under consideration. However, in the case of laminating a plurality of thin film layers, if the film formation conditions determined in units of a single layer film are applied to each thin film layer of the laminated film, each thin film layer of the manufactured thin film device is not necessarily an appropriate dopant. It was difficult to control the concentration, and product management of thin film devices was difficult.

  Moreover, in a normal thin film manufacturing apparatus, a nano-order thin film layer is formed under reduced pressure conditions and high temperatures. For this reason, when the inside of the thin film manufacturing apparatus is returned to room temperature and normal pressure, a concentration gradient occurs in the dopant concentration of the thin film layer due to the deterioration of the thin film layer due to a small amount of oxygen accompanying the opening to the atmosphere, and the diffusion of the dopant due to the temperature change, It was difficult to accurately measure the dopant concentration.

  This invention is made | formed in view of this point, and it aims at providing a thin film manufacturing apparatus with a high product management capability which can detect a dopant density | concentration accurately.

A plurality of thin film production apparatuses of the present invention are provided from the upstream side to the downstream side in the transport direction of the film substrate, each of which forms a thin film containing a dopant on the film substrate under reduced pressure conditions, A sampling chamber provided adjacent to the downstream side of the film chamber, and the sampling chamber detects a dopant concentration of a sample under reduced pressure from a film substrate carried in from the film formation chamber corresponding to the sampling chamber. characterized in that it comprises a sampling mechanism for collecting the use.

  According to this configuration, since the dopant concentration of each thin film layer of the thin film device can be detected for each desired film formation process, the influence on the analysis value due to the difference in dopant concentration between the thin film layers is reduced, and the dopant concentration of each thin film layer is reduced. It can be detected with high accuracy. Further, since the dopant concentration of the thin film layer formed under the same conditions as the film forming conditions of each thin film layer in an actual thin film manufacturing apparatus can be detected, the film forming conditions of each thin film layer can be adjusted accurately and easily. Furthermore, since the thin film formed on the film substrate under reduced pressure conditions can be collected as a sample from the film substrate without opening to the atmosphere, the deterioration of the thin film layer of the film substrate due to opening to the atmosphere can be suppressed, and the product management ability is high. A thin film manufacturing apparatus can be realized.

  According to the present invention, in the thin film manufacturing apparatus, the sampling mechanism includes a die having a punching hole and disposed in the sampling chamber, and a position facing the punching hole in the sampling chamber. And a punch blade for punching the mounted film substrate.

  According to this configuration, it is possible to easily collect the analysis sample by punching the film substrate. Moreover, generation | occurrence | production of the dust accompanying collection | recovery of the sample from a film substrate can be suppressed.

Further, the present invention is the thin film manufacturing apparatus, wherein the sampling chamber has an open end and a hollow portion, a part of the sampling chamber is inserted into the sampling chamber from the open end side, and the open end is formed in the punched hole. A take-out portion disposed opposite to the other end side of the open end and disposed outside the sampling chamber; and in the take-out portion, a first position provided on the open end side from a holding position for holding a sample collected by the sampling mechanism. provided between the first valve and a second valve which forms the sample extraction chamber across the front Kiho lifting position between said first valve, said first valve and said second valve And an exhaust means for discharging the air in the sample take-out chamber, wherein the first valve opens the sample so that it can be taken in and closes the atmosphere in the sampling chamber so as to be airtight. And butterflies.

  According to this configuration, the sample collected in the sampling chamber can be taken into the sample extraction chamber, the sample can be taken out after the first valve is closed, and the sample can be taken out without opening the sampling chamber to the atmosphere. . Further, since the sample can be taken out without opening the sampling chamber to the atmosphere, the sample can be analyzed without stopping the production of the film substrate, and the working efficiency can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, a dopant concentration can be detected accurately and the thin film manufacturing apparatus with high product management capability can be provided.

It is the schematic of the thin film manufacturing apparatus which concerns on embodiment of this invention. It is the schematic of the sampling mechanism of the thin film manufacturing apparatus which concerns on embodiment of this invention. It is a schematic diagram of the punch blade used for the thin film manufacturing apparatus which concerns on embodiment of this invention. It is a schematic diagram which shows the thin film device manufacturing process using the thin film manufacturing apparatus which concerns on embodiment of this invention. It is a figure which shows the SIMS analysis value of the 1st thin film layer of the thin film device manufactured using the thin film manufacturing apparatus which concerns on embodiment of this invention, and a 2nd thin film layer. It is a figure which shows the SIMS analysis value of the 1st thin film layer of the thin film device manufactured using the thin film manufacturing apparatus which concerns on embodiment of this invention. It is the schematic which shows the other example of the thin film manufacturing apparatus which concerns on embodiment of this invention. It is the schematic which shows the other example of the sampling mechanism of the thin film manufacturing apparatus which concerns on embodiment of this invention.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of a stepping roll type thin film manufacturing apparatus according to the present embodiment. In the thin film manufacturing apparatus 1 according to the present embodiment, a thin film device is manufactured by transporting the film substrate 10 from the upstream side to the downstream side by a roll-to-roll method. Further, the thin film manufacturing apparatus 1 is configured to be hermetically sealed by dividing the interior into a plurality of rooms by partition walls.

  As shown in FIG. 1, the thin film manufacturing apparatus 1 according to the present embodiment includes an unwinding chamber 11 that sends out a film substrate 10 and a winding chamber 12 that winds up the film substrate 10 sent out from the unwinding chamber 11. . Between the unwinding chamber 11 and the winding chamber 12, a first film forming chamber 13a and a second film forming film are formed on the film substrate 10 from the upstream side to the downstream side in the transport direction of the film substrate 10. A film forming chamber 13b and a third film forming chamber 13c are provided in this order. A first sampling chamber 14a is provided between the first film forming chamber 13a and the second film forming chamber 13b, and a second sampling is provided between the second film forming chamber 13b and the third film forming chamber 13c. A chamber 14b is provided. In order to analyze other thin film layers before stacking among a plurality of deposition chambers, a sampling chamber is provided for each deposition chamber in which deposition is performed. In FIG. 1, no sampling chamber is provided on the downstream side of the third film formation chamber 13c, which is the final stage.

  In the unwinding chamber 11, an unwinding roll 15 for unwinding the film substrate 10 before forming a thin film and a transporting roll 16 for transporting the film substrate 10 unwound from the unwinding roll 15 are provided. The unwinding roll 15 is installed in the unwinding chamber 11 so that the rotation axis thereof is horizontal in accordance with the transport direction of the film substrate 10. The transport roll 16 is installed so that the rotation axis is parallel to the unwinding roll 15, and supports the film substrate 10 from the lower surface and transports it to the first film forming chamber 13a. The inner wall of the unwinding chamber 11 is provided with a vacuum line 17a to which exhaust means such as a vacuum pump is connected, so that the inside of the unwinding chamber 11 can be decompressed.

  In the winding chamber 12, a transport roll 18 that transports the film substrate 10 and a winding roll 19 that winds the film substrate 10 are provided. The transport roll 18 has a rotating shaft installed horizontally, and transports the film substrate 10 transported from the third film forming chamber 13 c located at the final stage from the lower surface to the take-up roll 19. As with the unwinding roll 15, the winding axis of the winding roll 19 is horizontally installed so that the film substrate 10 conveyed from the conveying roll 18 can be wound. A vacuum line 17b to which exhaust means such as a vacuum pump is connected is provided on the inner wall of the winding chamber 12, and the inside of the winding chamber 12 can be decompressed.

  In the present embodiment, the film substrate 10 sent out from the unwinding chamber 11 is transported toward the winding chamber 12 through the plurality of film forming chambers 13a to 13c and the sampling chambers 14a and 14b. Therefore, a drive mechanism (not shown) including a motor that rotates the take-up roll 19 and a speed reducer that rotates the take-up roll 19 at a constant speed is provided in the take-up chamber 12. Thus, the film substrate 10 is configured to be conveyed at a constant speed. Moreover, in order to form a thin film device in the arbitrary film-forming position on the film substrate 10 in the winding chamber 12, the winding roll 19 is stopped so that conveyance of the film substrate 10 can be stopped at an arbitrary position. A control mechanism (not shown) is provided. The thin film manufacturing apparatus 1 is provided with a mechanism for applying a constant brake to the unwinding roll 15 in the unwinding chamber 11 so that the film substrate 10 is pulled out in a state of maintaining a constant tension corresponding to the driving mechanism. May be.

  The first film formation chamber 13a is provided with a high voltage electrode 20a and a ground electrode 21a. The high voltage electrode 20 a is provided at a position facing the upper surface of the film substrate 10, and the ground electrode 21 a is provided at a position facing the lower surface of the film substrate 10. The high voltage electrode 20a and the ground electrode 21a are configured so that a thin film having an arbitrary composition can be formed on the upper surface of the film substrate 10 by sputtering, vacuum deposition, etc., and dopant can be implanted. A vacuum line 17c is provided on the inner wall of the first film forming chamber 13a so that the inside of the first film forming chamber 13a can be decompressed.

  The first sampling chamber 14 a is provided with a sampling mechanism 22 a including a die for placing the film substrate 10 and a punch blade for collecting a sample from the film substrate 10. In the present embodiment, the sampling mechanism 22a is configured to collect a sample from the film substrate 10 on which a thin film has been formed in the first film formation chamber 13a. A vacuum line 17d is provided on the inner wall of the first sampling chamber 14a so that the inside of the first sampling chamber 14a can be depressurized to an arbitrary depressurization degree.

  The second film formation chamber 13b and the third film formation chamber 13c are configured similarly to the first film formation chamber 13a. The second film forming chamber 13b is provided with a high voltage electrode 20b and a ground electrode 21b, and a vacuum line 17e is provided on the inner wall of the second film forming chamber 13b. The third film forming chamber 13c is provided with a high voltage electrode 20c and a ground electrode 21c, and a vacuum line 17g is provided on the inner wall of the third film forming chamber 13c. In the present embodiment, a thin film having a higher dopant concentration than the first film formation chamber 13a is formed in the second film formation chamber 13b.

  Similar to the first sampling chamber 14a, the second sampling chamber 14b is provided with a sampling mechanism 22b, and a sample can be collected from the film substrate 10 on which a thin film is formed in the first film forming chamber 13a and the second film forming chamber 13b. It is configured as follows. A vacuum line 17f is provided on the inner wall of the second sampling chamber 14b.

  Between the unwinding chamber 11, the first film forming chamber 13a to the third film forming chamber 13c, the first sampling chamber 14a, the second sampling chamber 14b, and the winding chamber 12 of the thin film manufacturing apparatus 1, the partition walls 23a to 23 23f is provided. The partition walls 23a to 23f are each provided with a communication hole, and the film substrate 10 can be transferred from the unwind chamber 11 to the take-up chamber 12 by inserting the film substrate 10 into the communication holes.

  In the present embodiment, the evacuation means used for each of the vacuum lines 17a to 17g is not particularly limited as long as the evacuation means can depressurize the thin film manufacturing apparatus 1, and various exhaust means such as a vacuum pump and an ejector can be used. . Further, the same exhaust means may be used or different exhaust means may be mixed and used.

  Next, the first sampling chamber 14a and the second sampling chamber 14b of the thin film manufacturing apparatus 1 according to the present embodiment will be described in detail with reference to FIG. In the following description, the first sampling chamber 14a is described as an example, but the second sampling chamber 14b is configured in the same manner as the first sampling chamber 14a.

  As shown in FIG. 2, a sampling mechanism 22a is provided in the first sampling chamber 14a. The sampling mechanism 22 a includes a die 24 disposed on the lower surface side of the film substrate 10 and a punch blade 25 provided on the upper surface side of the film substrate 10 in the first sampling chamber 14 a. The die 24 is arranged horizontally, and is configured such that the film substrate 10 can be placed on the main surface thereof. A punching hole 26 penetrating in a direction orthogonal to the main surface is formed in the main surface of the die 24, and a punch blade 25 is provided at a position facing the punching hole 26 on the upper surface side of the film substrate 10. .

  In the present embodiment, the film substrate 10 on which a thin film is formed is placed on the die 24 when a sample is taken from the film substrate 10 by the sampling mechanism 22a. The film substrate 10 is placed on the die 24 by, for example, moving the die 24 upward by a driving mechanism (not shown) and bringing it into contact with the film substrate 10. The film substrate 10 is placed on the die 24 by adjusting the tension of the film substrate 10 stretched between the unwinding roll 15 and the winding roll 19 so that the film substrate 10 and the die 24 come into contact with each other. You may do it.

  The punch blade 25 is disposed on the upper surface side of the film substrate 10 with a predetermined gap between the punch substrate 25 and is configured to be driven in the vertical direction so that the film substrate 10 can be punched. Further, the punch blade 25 is configured to be retracted to the upper surface side of the film substrate 10 in the first sampling chamber 14a when the film substrate 10 is transported.

  Here, the punch blade 25 will be described with reference to FIG. As shown in FIG. 3, the punch blade 25 is formed in a cylindrical shape having a diameter of 6 mm, for example, and is formed in a semicircular arc shape having a notch of 3 mm in the height direction in a longitudinal sectional view. The shape of the punch blade 25 is not particularly limited as long as the punching of the film substrate 10 can be performed, and various shapes can be used. For example, punch blades 25 such as a circle, an ellipse, a rectangle, a triangle, and a polygon can be used in a U-shaped shape, a V-shaped shape, and a cross-sectional view in a longitudinal sectional view. Among these, from the viewpoint of suppressing the punching property of the film substrate 10 and the generation of dust accompanying the punching process of the film substrate 10, in the present embodiment, a punch having a semicircular arc shape in a longitudinal section and a substantially cylindrical shape in a transverse section view. A blade 25 is used.

  With reference to FIG. 2 again, the sample takeout unit 27 will be described. In the first sampling chamber 14 a, a sample take-out part 27 that is formed in a cylindrical shape and is open at one end is provided below the die 24. The sample take-out portion 27 has an opening end side inserted into the first sampling chamber 14a and disposed at a position corresponding to the punching hole 26 of the die 24, and the other end side disposed outside the first sampling chamber 14a.

  A sample holder 28 is provided in the cavity of the sample take-out part 27. A first gate valve 29 is provided between the sample holding unit 28 and the opening end on the die 24 side, and the second gate valve 30 is interposed between the first gate valve 29 and the sample holding unit 28. Is provided. A vacuum line 17h is connected to the sample take-out part 27, and the inside of the sample take-out part 27 can be decompressed. The vacuum line 17h is configured in the same way as the vacuum lines 17a to 17g, and may be connected to the same exhaust means or different exhaust means.

  Next, with reference to FIGS. 1-4, operation | movement of the thin film manufacturing apparatus 1 which concerns on this Embodiment is demonstrated. As shown in FIG. 1, first, the unwinding roll 15 around which the film substrate 10 is wound is installed in the unwinding chamber 11, and the film substrate 10 is installed between the unwinding roll 15 and the winding roll 19. Next, the entire thin film manufacturing apparatus 1 is depressurized by the vacuum lines 17a to 17g to be in a vacuum state. In this state, the take-up roll 19 is driven to transport the film substrate 10 from the unwind roll 15 to the first film forming chamber 13a.

  The conveyance of the film substrate 10 conveyed to the first film formation chamber 13a is stopped according to the film formation position of the film substrate 10 (FIG. 4A). Next, the first thin film layer 41 is formed on the film substrate 10 by sputtering. First, plasma is generated in the first film forming chamber 13a by applying a high frequency voltage to the high voltage electrode 20a. Next, the raw material gas introduced from the introduction pipe (not shown) is decomposed to form the first thin film layer 41 on the surface of the film substrate 10 (FIG. 4B).

  Next, the film substrate 10 is transported to the first sampling chamber 14a while maintaining the reduced pressure state. Next, as shown in FIG. 2, the film substrate 10 is placed on the die 24. Next, the inside of the sample take-out part 27 is depressurized by the vacuum line 17h, and after the vacuum state is established, the first gate valve 29 is opened.

  Next, the sampling position of the film substrate 10 is punched by the punch blade 25 (FIG. 4C). The film substrate 10 (analytical sample A) punched by punching falls to the sample holder 28 through the punching hole 26 of the die 24. Next, after closing the first gate valve 29 and the vacuum line 17h, the second gate valve 30 is opened, the inside of the sample holder 28 is returned to atmospheric pressure, and the analysis sample A is taken out.

  Next, the first gate valve 29 is closed and the film substrate 10 is transferred to the second film forming chamber 13b. Next, the conveyance of the film substrate 10 is stopped at a position corresponding to the film formation site on the film substrate 10. Next, the second thin film layer 42 is formed on the film substrate 10 by sputtering (FIG. 4D).

  Next, the film substrate 10 is transported to the second sampling chamber 14b while maintaining the reduced pressure state. Next, as shown in FIG. 2, the film substrate 10 is placed on the die 24. Next, the inside of the sample take-out part 27 is depressurized by the vacuum line 17h, and after the vacuum state is established, the first gate valve 29 is opened.

  Next, the sampling position of the film substrate 10 is punched by the punch blade 25 (FIG. 4E). The film substrate 10 (analytical sample B) punched by punching falls to the sample holder 28 through the punching hole 26 of the die 24. Next, after closing the first gate valve 29 and the vacuum line 17h, the second gate valve 30 is opened, the inside of the sample holder 28 is returned to atmospheric pressure, and the analysis sample B is taken out.

  Through the above steps, the analysis sample A in which only the first thin film layer 41 is formed and the analysis sample B in which the first thin film layer 41 and the second thin film layer 42 are stacked are collected under reduced pressure conditions. Here, since only the first thin film layer 41 is formed on the film substrate 10 in the obtained analysis sample A, the first thin film layer 41 formed under the film formation conditions of the first film formation chamber 13a. The dopant concentration can be detected. Further, since the analysis sample B is collected before the formation of the third thin film layer 43 to be described later, it is formed under the film formation conditions in the second film formation chamber 13b without being affected by the dopant concentration of the third thin film layer 43. The dopant concentration of the second thin film layer 42 can be detected.

  Next, the first gate valve 29 is closed, the film substrate 10 is transferred to the third film forming chamber 13c, and the transfer of the film substrate 10 is stopped at a position corresponding to the film forming portion on the film substrate 10. Next, the conveyance of the film substrate 10 is stopped at a position corresponding to the film formation site on the film substrate 10.

  Next, the third thin film layer 43 is formed on the film substrate 10 by sputtering (FIG. 4F). Next, the film substrate 10 is transported to the winding chamber 12 while maintaining the reduced pressure state. The film substrate 10 conveyed to the winding chamber 12 is wound up by a winding roll 19.

  Next, dry air is introduced into the winding chamber 12 to release it to the atmosphere. Finally, the tension between the unwinding roll 15 and the winding roll 19 is released, and the film substrate 10 is cut in the unwinding chamber 11 and the winding chamber 12 to take out the thin film device.

  In the present embodiment, sampling from the film substrate 10 is performed by providing a sampling space (test space) around the thin film device formed on the film substrate 10. By providing the sampling space, an analysis sample can be collected without affecting the performance of the thin film device.

  Next, analysis values obtained by SIMS analysis of the analysis sample A and the analysis sample B collected in the thin film manufacturing process described above with reference to FIGS. 5 and 6 will be described. In the present embodiment, the dopant concentration of the first thin film layer 41 is set to 5.0E + 16, and the dopant concentration of the second thin film layer 42 is set to 5.0E + 20.

  FIG. 5 is a diagram showing SIMS analysis values of analysis sample B. The vertical axis in FIG. 5 indicates the boron concentration of mass number 11 as a dopant, and the horizontal axis indicates the depth from the surface. The boron concentration shown here is a value converted from a sample having a known concentration. The range R1 from the sample depth 0 to 12 on the horizontal axis indicates the analysis value of the second thin film layer 42 having a high dopant concentration, and the range R2 from the sample depth 12 to 16 is the first thin film layer 41 having a low dopant concentration. The analysis value is shown. The range R3 where the sample depth is greater than 16 corresponds to the analysis value of the film substrate 10. The solid line in FIG. 5 indicates the design value of the dopant concentration of the first thin film layer 41 and the second thin film layer 42 of the above-described thin film device, and the dotted line in FIG.

  As shown in FIG. 5, the analysis sample B has a dopant concentration as designed in the range R1 corresponding to the second thin film layer 42 having a high dopant concentration. On the other hand, in the range R2 corresponding to the first thin film layer 41 having a low dopant concentration, it is influenced by the dopant concentration of the second thin film layer 42, and the analysis value of the dopant concentration becomes higher than the design value. From this result, when analyzing in the state where the second thin film layer 42 having a high dopant concentration is stacked on the first thin film layer 41 having a low dopant concentration, the dopant concentration of the first thin film layer 41 having a low dopant concentration is accurately evaluated. I understand that I can't.

  In FIG. 5, the analysis value is unstable in the range of 1.0E + 17 to 2.0E + 17 in the region of the sample depth 15-17. This range corresponds to the interface between the thin film layer and the film substrate, and is a region where the base material component changes (base material of the thin film layer: silicon, base material of the film substrate: carbon, etc.). Secondary ions are generated by the base material component. The efficiency changes greatly (in SIMS analysis, it is called matrix effect). Thus, in SIMS analysis, fluctuations in concentration near the interface may not reflect the original concentration, and thus will not be discussed here.

  FIG. 6 is a diagram showing SIMS analysis values of the analysis sample A. The vertical axis and the horizontal axis in FIG. 6 indicate the dopant concentration and the sample depth in the same manner as in FIG. 5, and the range R4 of the sample depth 0 to 3 on the horizontal axis indicates the analysis value of the first thin film layer 41. Yes. A range R5 larger than the sample depth 3 on the horizontal axis corresponds to an analysis value of the film substrate 10.

  As shown in FIG. 6, it can be seen that the analytical sample A is stable at a dopant concentration value of about 5.0E + 16 in the range R4 indicating the dopant concentration of the first thin film layer 41. From this result, it can be seen that the analysis value of the first thin film layer 41 matches the design value of the dopant concentration. In the example shown in FIG. 6, the dopant concentration is extremely high at the interface between the ranges R4 and R5. This is because of the influence of the outermost surface of the first thin film layer 41 and the interface of the film substrate 10 and stable secondary ions are not generated.

  In the present embodiment, since the dopant concentration of the third thin film layer 43 is formed in the uppermost layer of the thin film device, it can be detected by SIMS analysis of the thin film device after being taken out from the thin film manufacturing apparatus 1. it can.

  As described above, according to the present embodiment, the analysis sample A, the first thin film layer 41, and the second thin film layer 42 in which only the first thin film layer 41 is formed from above the film substrate 10 under reduced pressure are formed. By collecting the analyzed sample B and analyzing each sample individually, the dopant concentrations of the first thin film layer 41 and the second thin film layer 42 can be accurately detected. Therefore, the dopant concentration injected into the first thin film layer 41 under the film forming conditions in the first film forming chamber 13a and the dopant concentration injected into the second thin film layer 42 under the film forming conditions in the second film forming chamber 13b are determined. Each can be detected. Further, since the dopant concentration of the third thin film layer 43 is detected by product analysis of the thin film device, the dopant concentration implanted under the film forming conditions in the third film forming chamber 13c can be measured. Thus, since the dopant concentration of the first thin film layer 41 to the third thin film layer 43 can be individually measured without being affected by the difference in dopant concentration between the thin film layers, the first film forming chamber 13a to the third film forming chamber 13c. According to the film forming conditions, the dopant concentration injected into each of the first thin film layer 41 to the third thin film layer 43 can be managed, and a thin film manufacturing apparatus with high product management capability can be realized.

  In addition, according to the present embodiment, since the analysis sample A and the analysis sample B can be collected from the film substrate 10 under a reduced pressure condition, the film surfaces of the first thin film layer 41 and the second thin film layer 42 are oxidized. In addition, the dopant concentration of the first thin film layer 41 to the third thin film layer 43 can be accurately analyzed without causing deposition of impurities in the atmosphere.

  In the present embodiment, the degree of vacuum in the thin film manufacturing apparatus 1 when the first thin film layer 41 to the third thin film layer 43 are formed is preferably smaller than 133 Pa. By setting the degree of vacuum in the thin film manufacturing apparatus 1 to 133 Pa or less, the first thin film layer 41 to the third thin film layer 43 can be suitably formed.

  Further, it is preferable that the degree of decompression of the sample extraction unit 27 is relatively higher than that in the first sampling chamber 14a and the second sampling chamber 14b. By making the pressure reduction degree of the sample extraction part 27 higher than the 1st sampling chamber 14a and the 2nd sampling chamber 14b, mixing of oxygen and dust at the time of sample collection can be suppressed.

  Further, the embodiment has been described in which the film substrate 10 is transported from the upstream side to the downstream side, and samples are sequentially collected in the first sampling chamber 14a and the second sampling chamber 14b. However, the first sampling chamber 14a and / or the second sampling chamber 14b have been described. Depending on the analysis result of the sample collected in the sampling chamber 14b, thin film deposition or dopant implantation may be performed again in the first deposition chamber 13a or the second deposition chamber 13b. In this case, when the thin film formation or the dopant injection in the first film formation chamber 13a or the second film formation chamber 13b is defective, the thin film formation or the dopant injection can be performed again. Therefore, the product management of the thin film device can be performed more reliably.

  In the above-described embodiment, the thin film manufacturing apparatus 1 that transports the film substrate so that the surface of the film substrate is horizontal has been described. However, the present invention can also be applied to a thin film manufacturing apparatus that transports the surface of the film substrate vertically. it can. With reference to FIG. 7 and FIG. 8, the thin film manufacturing apparatus 2 which conveys the surface of a film board | substrate perpendicularly | vertically with respect to a horizontal surface is demonstrated centering on difference with the thin film manufacturing apparatus 1 shown in FIG. FIG. 7 is a schematic view seen from the horizontal plane of the thin film manufacturing apparatus 2 when the surface of the film substrate is conveyed perpendicularly to the horizontal plane.

  As shown in FIG. 7, in this thin film manufacturing apparatus 2, the rotation axes of the unwinding roll 72 of the unwinding chamber 71 and the winding roll 74 of the winding chamber 73 are arranged perpendicular to the horizontal plane. A first film forming chamber 75a to a third film forming chamber 75c are provided between the unwinding chamber 71 and the winding chamber 73, and a first sampling chamber 76a, between the film forming chambers 75a to 75c, A second sampling chamber 76b is provided. Partitions 77a to 77f are provided between the film forming chambers 75a to 75c and the first sampling chamber 76a and the second sampling chamber 76b, respectively. The partition walls 77a to 77f are each provided with a communication hole, and the film substrate 78 can be transferred from the unwind chamber 71 to the take-up chamber 72 by inserting the film substrate 78 into the communication holes. Vacuum lines 79a to 79g are provided on the inner walls of the unwinding chamber 71, the winding chamber 73, the film forming chambers 75a to 75c, and the sampling chambers 76a and 76b.

  The conveyance roll 80 of the unwinding chamber 71 and the conveyance roll 81 of the winding chamber 73 are arranged on the front side of the paper surface with respect to the film substrate 78, support the film substrate 78 from one surface side, and the surface of the film substrate 78 is Transport it so that it is perpendicular to the horizontal plane.

  In each of the film forming chambers 75a to 75c, high voltage electrodes 82a to 82c are arranged at positions facing the film substrate 78 on the back side of the paper with respect to the film substrate 78, and at positions facing the film substrate 78 on the front side of the paper. Ground electrodes 83a to 83c are arranged. Sampling mechanisms 84a and 84b are provided in the sampling chambers 76a and 76b.

  Next, the sampling mechanism 84a of the first sampling chamber 76a of the thin film manufacturing apparatus 2 will be described with reference to FIG. The sampling mechanism 84b of the second sampling chamber 76b is configured similarly to the sampling mechanism 84a of the first sampling chamber 76a.

  As shown in FIG. 8, the sampling mechanism 84a of the thin film manufacturing apparatus 2 includes a die 85 disposed perpendicularly to one surface side of the film substrate 78 and the other surface of the film substrate 78 in the first sampling chamber 76a. And a film support mechanism 86 disposed on the side. A punching hole 87 is formed in the main surface of the die 85 so as to penetrate in a direction orthogonal to the main surface, and a punch blade 88 is provided at a position facing the punching hole 87 on the other surface side of the film substrate 78. ing. The film support mechanism 86 is disposed on each of the upstream side and the downstream side of the punch blade 88 in the transport direction of the film substrate 78, and the film substrate 78 is placed between the die 85 and the film support mechanism 86 when the punch blade 88 collects a sample. It is comprised so that it can clamp with.

  The punch blade 88 is disposed on the other surface side of the film substrate 78 with a predetermined gap between the punch substrate 88 and is configured to be driven in the horizontal direction so that the film substrate 78 can be punched. In this way, the thin film manufacturing apparatus 2 is configured to suppress the deflection of the film substrate 78 with respect to the weight direction even when the film substrate 78 is vertically conveyed and to punch the film substrate 78 in the horizontal direction.

  Next, the sample extraction unit 89 will be described. The sample extraction unit 89 is formed in a cylindrical shape with one end opened, and is provided on the side wall of the first sampling chamber 76a. The sample take-out portion 89 has an opening end side inserted into the first sampling chamber 76a and disposed at a position corresponding to the punching hole 87 of the die 85, and the other end side disposed outside the first sampling chamber 76a.

  A sample holder 90 is provided in the cavity of the sample take-out part 89. A first gate valve 91 is provided between the sample holding unit 90 and the opening end on the die 85 side, and a second gate valve 92 is provided so as to sandwich the sample holding unit 90 between the first gate valve 91. Is provided. A vacuum line 79h is connected to the sample take-out unit 89, and the inside of the sample take-out unit 89 can be decompressed. Other configurations and operations at the time of sample collection are the same as those of the thin film manufacturing apparatus 1, and thus description thereof is omitted. Thus, in the thin film manufacturing apparatus 2 according to the present embodiment, even when the surface of the film substrate 78 is configured to be vertical, bending of the film substrate 78 can be suppressed, and sampling is performed in the same manner as the thin film manufacturing apparatus 1. It can be performed.

  The present invention is not limited to the above embodiment, and can be implemented with various modifications. Moreover, there is no restriction | limiting in particular about the numerical value, dimension, and material which were demonstrated by the said embodiment. Other modifications may be made as appropriate without departing from the scope of the object of the present invention.

  The present invention is applicable to, for example, a flexible thin film solar cell or other various thin film devices.

DESCRIPTION OF SYMBOLS 1, 2 Thin film manufacturing apparatus 10, 78 Film substrate 11, 71 Unwinding chamber 12, 73 Winding chamber 13a, 75a 1st film-forming chamber 13b, 75b 2nd film-forming chamber 13c, 75c 3rd film-forming chamber 14a, 76a 1st sampling chamber 14b, 76b 2nd sampling chamber 15, 72 Unwinding roll 16, 18, 80, 81 Transport roll 17a-17h, 79a-79h Vacuum line 19, 74 Winding roll 20a-20c, 82a-82c High voltage Electrodes 21a-21c, 83a-83c Grounding electrodes 22a, 22b, 84a, 84b Sampling mechanism 23a-23f, 77a-77f Bulkhead 24, 85 Die 25, 88 Punch blade 26, 87 Punching hole 27, 89 Sample take-out part 28, 90 Sample holding portion 29, 91 First gate valve 30, 92 Second gate valve 4 The first thin film layer 42 and the second thin film layer 43 third thin layer 86 film support mechanism

Claims (3)

A plurality of film formation chambers that are provided from the upstream side to the downstream side in the conveyance direction of the film substrate, each forming a thin film containing a dopant on the film substrate under reduced pressure conditions,
A sampling chamber provided adjacent to the downstream side of the film forming chamber, and
The sampling chamber is provided with a sampling mechanism for collecting a sample for detection of dopant concentration under a reduced pressure condition from a film substrate on which a thin film carried from the film formation chamber corresponding to the sampling chamber is formed. Thin film manufacturing equipment.   The sampling mechanism includes a die having a punching hole and disposed in the sampling chamber, and a punch for punching the film substrate placed on the die provided at a position facing the punching hole in the sampling chamber. The thin film manufacturing apparatus according to claim 1, further comprising a blade. The sampling chamber has an open end and a hollow portion, a part from the open end side is inserted into the sampling chamber, the open end is disposed to face the punching hole, and the other end side of the open end is An extraction portion disposed outside the sampling chamber;
A first valve provided on the opening end side from a holding position for holding a sample collected by the sampling mechanism in the take-out portion;
A second valve forming a sample extraction chamber across the front Kiho lifting position between said first valve,
An exhaust means provided between the first valve and the second valve for exhausting air in the sample take-out chamber;
Wherein the first valve is opened the sample can capture, the film manufacturing apparatus 請 Motomeko 2 wherein you said closing the atmosphere of the sampling chamber to be hermetically maintained.

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