JP5338396B2 - Manufacturing method of surface acoustic wave device - Google Patents

Manufacturing method of surface acoustic wave device Download PDF

Info

Publication number
JP5338396B2
JP5338396B2 JP2009059078A JP2009059078A JP5338396B2 JP 5338396 B2 JP5338396 B2 JP 5338396B2 JP 2009059078 A JP2009059078 A JP 2009059078A JP 2009059078 A JP2009059078 A JP 2009059078A JP 5338396 B2 JP5338396 B2 JP 5338396B2
Authority
JP
Japan
Prior art keywords
wave device
acoustic wave
piezoelectric substrate
surface acoustic
protective body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009059078A
Other languages
Japanese (ja)
Other versions
JP2010213144A (en
JP2010213144A5 (en
Inventor
敦 鷹野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2009059078A priority Critical patent/JP5338396B2/en
Publication of JP2010213144A publication Critical patent/JP2010213144A/en
Publication of JP2010213144A5 publication Critical patent/JP2010213144A5/ja
Application granted granted Critical
Publication of JP5338396B2 publication Critical patent/JP5338396B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は低背化した弾性表面波デバイスの製造方法に関するものである。   The present invention relates to a method for manufacturing a surface acoustic wave device having a reduced height.

近年、機器の薄型化への要望に対して、弾性表面波デバイスに対しても小型化、低背化への要望が強まってきている。   In recent years, in response to the demand for thinner equipment, there has been an increasing demand for surface acoustic wave devices that are smaller and lower in profile.

弾性表面波デバイスの小型化、低背化へのひとつの方法として、弾性表面波デバイスのパターンを形成した圧電基板の表面に振動空間を確保しながら周囲および上方を覆い、これをダイサーで切断してデバイスを得るウェハレベルパッケージと呼ばれる方法がある。しかしながら、弾性表面波デバイスのサイズが小さくなってくると、ダイサーによる切り代の面積の割合が大きくなってくるため、結果として弾性表面波デバイスのサイズの割には得られる弾性表面波デバイスの個数が増えず、量産性があまり向上しなくなってくる。また異なる硬さのものをダイシングするときにチッピングが発生し、特に弾性表面波デバイスを樹脂等でモールドする場合、チッピングのところからクラックが発生しやすくなるという課題があった。   One way to reduce the size and height of a surface acoustic wave device is to cover the periphery and top of the surface of the piezoelectric substrate on which the surface acoustic wave device pattern is formed, while cutting it with a dicer. There is a method called a wafer level package for obtaining devices. However, as the surface acoustic wave device size decreases, the ratio of the cutting allowance by the dicer increases, and as a result, the number of surface acoustic wave devices obtained for the surface acoustic wave device size. Will not increase, and mass productivity will not improve much. In addition, chipping occurs when dicing products having different hardnesses, and particularly when a surface acoustic wave device is molded with a resin or the like, there is a problem that cracks tend to occur from the chipping.

なお、この出願の発明に関連する先行技術文献情報としては、例えば、特許文献１が知られている。
特開２００８−５４６４号公報 As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP 2008-5464 A

本発明は上記課題を解決するものであり、小型化、低背化した弾性表面波デバイスを量産性良く得ることができ、また信頼性の高い弾性表面波デバイスを得ることを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and to obtain a surface acoustic wave device having a small size and a low profile that can be obtained with high productivity and a highly reliable surface acoustic wave device.

上記課題を解決するために本発明は、圧電基板の第１面に弾性表面波デバイスパターンを複数個形成する工程と、弾性表面波デバイスパターンを囲む側壁とこの側壁上に設けられ弾性表面波デバイスパターンの励振空間を覆う天板を設け、圧電基板の第１面全体に保護体で覆う工程と、レーザ光を前記圧電基板の内部および保護体に集光させて照射することにより圧電基板の内部に改質領域を形成するとともにレーザ光を照射した部分の保護体を除去する工程と、圧電基板の第１面とは反対側の第２面側を研削することにより圧電基板を薄板化する工程と、改質領域で各デバイスに分離する工程と、を備えたものであり、このようにすることにより、切り代をなくすことにより、ウェハ当たりのデバイスの取れ数を増加させるとともに、チッピングを低減させ、信頼性を向上させることができる。   In order to solve the above problems, the present invention provides a step of forming a plurality of surface acoustic wave device patterns on a first surface of a piezoelectric substrate, a side wall surrounding the surface acoustic wave device pattern, and a surface acoustic wave device provided on the side wall. A step of providing a top plate for covering the excitation space of the pattern, covering the entire first surface of the piezoelectric substrate with a protective body, and condensing and irradiating the inside of the piezoelectric substrate and the protective body with the laser light. Forming a modified region and removing a portion of the protective body irradiated with laser light, and thinning the piezoelectric substrate by grinding the second surface side opposite to the first surface of the piezoelectric substrate And a step of separating each device in the modified region, and in this way, the number of devices per wafer can be increased and the chip can be removed by eliminating the cutting allowance. Reduce the ring, thereby improving the reliability.

本発明によると、量産性良くチッピングの少ない薄板化した弾性表面波デバイスが得られ、高品質な弾性表面波デバイスを得ることができる。   According to the present invention, a thinned surface acoustic wave device with high productivity and less chipping can be obtained, and a high quality surface acoustic wave device can be obtained.

（実施の形態１）
図１は、本発明の実施の形態１における弾性表面波デバイスの製造方法を示す図である。 (Embodiment 1)
FIG. 1 is a diagram showing a method for manufacturing a surface acoustic wave device according to Embodiment 1 of the present invention.

まず図１（ａ）のように、厚さ約０．３５ｍｍの両面を鏡面研磨したタンタル酸リチウムあるいはニオブ酸リチウムの単結晶からなる圧電基板１１の第１面にフォトリソグラフィ技術を用いて弾性表面波デバイスパターン１２を複数個形成する。その上に弾性表面波デバイスパターン１２を囲み、個片に分離した際の外周から全周に渡って間隔を設けて形成した側壁１４を設け、さらにその上に弾性表面波デバイスパターン１２の励振空間を覆い、同じく個片に分離した際の外周から全周に渡って間隔を設けて形成した天板１５を設け、弾性表面波デバイスパターン１２に接続され外部に電気信号を取り出すための接続電極１６を設け、圧電基板１１の第１面側全体をエポキシ系樹脂からなる保護体１７で覆うことにより、図１（ｂ）のようになる。ここで保護体１７の圧電基板１１の第１面側からの厚さを約０．０８ｍｍとし、保護体１７は重量比で８５％以上のシリカをフィラーとして含有したエポキシ系樹脂を用いている。   First, as shown in FIG. 1A, an elastic surface is formed on the first surface of a piezoelectric substrate 11 made of a single crystal of lithium tantalate or lithium niobate having a mirror-polished surface having a thickness of about 0.35 mm using a photolithography technique. A plurality of wave device patterns 12 are formed. A sidewall 14 is provided on the surface of the surface acoustic wave device pattern 12 so as to be spaced from the outer periphery to the entire periphery when the surface acoustic wave device pattern 12 is separated into individual pieces. Similarly, a top plate 15 is provided which is formed to be spaced from the outer periphery to the entire periphery when separated into individual pieces, and is connected to the surface acoustic wave device pattern 12 and is connected to an electrode 16 for taking out an electric signal to the outside. And covering the entire first surface side of the piezoelectric substrate 11 with a protective body 17 made of an epoxy resin, as shown in FIG. Here, the thickness of the protective body 17 from the first surface side of the piezoelectric substrate 11 is about 0.08 mm, and the protective body 17 is made of an epoxy resin containing 85% or more silica by weight as a filler.

次に図１（ｃ）のように、圧電基板１１の裏面（第２面）側から近赤外レーザ光１８を照射し、レンズにより圧電基板１１の内部に集光させる。このとき集光させる位置は、第１面側に近いところになるようにする。本実施の形態では第１面側から約０．０８ｍｍの深さの位置に焦点が結ばれるようにする。さらに保護体１７に焦点が結ばれるように近赤外レーザ光１８を照射する。   Next, as shown in FIG. 1C, the near-infrared laser light 18 is irradiated from the back surface (second surface) side of the piezoelectric substrate 11 and is condensed inside the piezoelectric substrate 11 by the lens. At this time, the condensing position is close to the first surface side. In the present embodiment, the focal point is formed at a depth of about 0.08 mm from the first surface side. Further, the near-infrared laser beam 18 is irradiated so that the protective body 17 is focused.

このとき、通常弾性表面波デバイスの圧電基板はバルク波による影響を抑圧するために裏面を荒らしているため、裏面側からレーザ光を照射すると荒れた裏面で反射するため、十分に内部で集光させることができない。これに対し本発明の実施形態１では裏面側も鏡面研磨しているため、内部に集光させることができる。   At this time, the piezoelectric substrate of the surface acoustic wave device usually has a rough back surface in order to suppress the influence of bulk waves. I can't let you. On the other hand, in Embodiment 1 of the present invention, the back side is also mirror-polished, so that it can be condensed inside.

以上のように圧電基板１１の内部にレーザ光１８を集光させると、その集光された付近で多光子吸収が起こり、図１（ｄ）のように改質領域１３が形成される。さらにレーザ光１８を保護体１７に集光させることにより照射した部分の保護体１７を除去する。これは保護体１７を構成する材料が重量比で８５％以上と多量のフィラーを含み、またその厚さも約０．０８ｍｍと非常に薄いため、レーザ光を照射した部分の保護体１７中のエポキシ系樹脂を揮発させ、フィラーのみの状態となった保護体除去部１９を形成することが可能となるものである。   When the laser beam 18 is condensed inside the piezoelectric substrate 11 as described above, multiphoton absorption occurs in the vicinity of the condensed light, and the modified region 13 is formed as shown in FIG. Furthermore, the irradiated portion of the protective body 17 is removed by condensing the laser beam 18 on the protective body 17. This is because the material constituting the protective body 17 contains a large amount of filler of 85% or more by weight, and the thickness thereof is also very thin, about 0.08 mm. It is possible to form the protective body removing portion 19 in which the resin is volatilized and only the filler is in a state.

次に図１（ｅ）のように、裏面側から研削を行い、圧電基板１１の厚さが約０．１６ｍｍになるようにする。このように薄板化を行うと同時に、裏面加工をも実現することができる。従来チップを薄板化する方法として先ダイシングと呼ばれている方法が知られているが、この場合ハーフカット溝を設けているため、この部分が空間になっている。そのため研削バイトがこの空間を通った後圧電基板に到達するまで研削を行うため、弾性表面波デバイスチップの裏面の角となる部分でチッピングが発生しやすいが、本実施の形態１では、改質領域１３だけで空間ができていないため、チッピングが発生しにくくなるようにすることができる。   Next, as shown in FIG. 1E, grinding is performed from the back surface side so that the thickness of the piezoelectric substrate 11 becomes about 0.16 mm. In this way, the back surface processing can be realized simultaneously with the thinning. Conventionally, a method called tip dicing is known as a method for thinning a chip. In this case, since a half-cut groove is provided, this portion is a space. Therefore, since grinding is performed until the grinding tool passes through this space and reaches the piezoelectric substrate, chipping is likely to occur at the corner of the back surface of the surface acoustic wave device chip. Since there is no space only in the region 13, chipping can be made difficult to occur.

次にピックアップシート２０へ貼り合わせし、ピックアップシート２０をエキスパンドすることにより、改質領域１３で分離させることができ、図１（ｆ）のようになる。   Next, it is bonded to the pickup sheet 20, and the pickup sheet 20 is expanded so that it can be separated in the modified region 13, as shown in FIG.

以上のように個片化する際に、ダイサーを用いずに、レーザ光を集光させることによって分離させているため、切り代が発生せず、同じデバイスサイズのものを得る場合、ウェハ当たりの取れ数を増加させることができ、量産性を向上させることができる。また分離させた面についても、ダイサーで切断したものに比べてチッピングを少なくすることができ、特にこの弾性表面波デバイスを基板に実装した後にモールドするような場合において、信頼性を向上させることができる。   When separating into individual pieces as described above, since the laser beam is separated by condensing without using a dicer, the cutting margin does not occur, and when obtaining the same device size, The number of picks can be increased, and mass productivity can be improved. In addition, the separated surface can also reduce chipping compared to a surface cut by a dicer, and can improve reliability particularly when the surface acoustic wave device is molded after being mounted on a substrate. it can.

さらに、保護体１７の側面部はエポキシ系樹脂が揮発し、フィラーのみの状態となった保護体除去部１９としているため、この弾性表面波デバイスを実装した後樹脂モールドした場合、クッション層として働き、モールド樹脂による弾性表面波デバイスへのストレスを緩和することができる。   Further, since the side surface portion of the protective body 17 is the protective body removing portion 19 in which the epoxy resin is volatilized and becomes only the filler, when the surface acoustic wave device is mounted and then resin-molded, it functions as a cushion layer. The stress on the surface acoustic wave device due to the mold resin can be alleviated.

本発明の弾性表面波デバイスの製造方法は、小型化、低背化の弾性表面波デバイスを量産性良く得ることができ、また信頼性をも向上させることができるため、産業上有用なものとなる。   The surface acoustic wave device manufacturing method of the present invention can provide a surface acoustic wave device having a small size and a low profile with good mass productivity, and can also improve reliability. Become.

本発明の実施の形態１における弾性表面波デバイスの製造方法を示す図The figure which shows the manufacturing method of the surface acoustic wave device in Embodiment 1 of this invention

１１ 圧電基板
１２ 弾性表面波デバイスパターン
１３ 改質領域
１４ 側壁
１５ 天板
１６ 接続電極
１７ 保護体
１８ レーザ光
１９ 保護体除去部
２０ ピックアップシート DESCRIPTION OF SYMBOLS 11 Piezoelectric substrate 12 Surface acoustic wave device pattern 13 Modification | denaturation area | region 14 Side wall 15 Top plate 16 Connection electrode 17 Protection body 18 Laser beam 19 Protection body removal part 20 Pickup sheet

Claims (4)

圧電基板の第１面に弾性表面波デバイスパターンを複数個形成する工程と、前記圧電基板の第１面に前記弾性表面波デバイスパターンを囲む側壁を設ける工程と、励振空間を介して前記弾性表面波デバイスパターンを覆う天板を前記側壁上に設ける工程と、前記側壁と前記天板を形成した前記圧電基板の第１面を保護体で覆う工程と、レーザ光を前記保護体に集光させて照射することにより前記レーザ光を照射した部分の前記保護体を除去する工程と、レーザ光を前記圧電基板の内部に集光させて照射することにより前記圧電基板の内部に改質領域を形成する工程と、前記改質領域で各デバイスに分離する工程とを備え、前記保護体はフィラーを含有した樹脂からなり、前記レーザ光を前記保護体に集光させる工程は、レーザ光を照射した部分の前記保護体の中の前記樹脂を揮発させ、前記フィラーからなる保護体除去部を形成する工程である弾性表面波デバイスの製造方法。 Forming a plurality of surface acoustic wave device patterns on the first surface of the piezoelectric substrate; providing a side wall surrounding the surface acoustic wave device pattern on the first surface of the piezoelectric substrate; and the elastic surface via an excitation space. A step of providing a top plate covering the wave device pattern on the side wall, a step of covering the first surface of the piezoelectric substrate on which the side wall and the top plate are formed with a protective body, and condensing laser light on the protective body. The step of removing the protective body from the portion irradiated with the laser beam by irradiating the laser beam, and forming a modified region inside the piezoelectric substrate by condensing and irradiating the laser beam inside the piezoelectric substrate And a step of separating each device in the modified region, the protective body is made of a resin containing a filler, and the step of condensing the laser light on the protective body is irradiated with laser light. Part Wherein said resin is volatilized in a protected form, method of manufacturing a surface acoustic wave device is a step of forming a protective member removing unit formed of the filler. 前記弾性表面波デバイスは、側面部に前記フィラーのみの箇所を設けた請求項１記載の弾性表面波デバイスの製造方法。 The method for manufacturing a surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is provided with only the filler on a side surface. 前記改質領域で各デバイスに分離する工程の前に、前記圧電基板の第１面とは反対側の第２面側を研削することにより前記圧電基板を薄板化する工程を備えた請求項１に記載の弾性表面波デバイスの製造方法。2. The method of thinning the piezoelectric substrate by grinding a second surface side opposite to the first surface of the piezoelectric substrate before the step of separating each device in the modified region. A method for producing a surface acoustic wave device according to claim 1. 前記レーザ光を前記圧電基板の内部に集光させて照射することにより前記圧電基板の内部に改質領域を形成する工程は、前記圧電基板の第１面に近い位置に焦点を結ぶ請求項３に記載の弾性表面波デバイスの製造方法。4. The step of forming a modified region in the piezoelectric substrate by condensing and irradiating the laser beam inside the piezoelectric substrate focuses on a position close to the first surface of the piezoelectric substrate. A method for producing a surface acoustic wave device according to claim 1.
JP2009059078A 2009-03-12 2009-03-12 Manufacturing method of surface acoustic wave device Active JP5338396B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009059078A JP5338396B2 (en) 2009-03-12 2009-03-12 Manufacturing method of surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009059078A JP5338396B2 (en) 2009-03-12 2009-03-12 Manufacturing method of surface acoustic wave device

Publications (3)

Publication Number Publication Date
JP2010213144A JP2010213144A (en) 2010-09-24
JP2010213144A5 JP2010213144A5 (en) 2012-04-12
JP5338396B2 true JP5338396B2 (en) 2013-11-13

Family

ID=42972837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009059078A Active JP5338396B2 (en) 2009-03-12 2009-03-12 Manufacturing method of surface acoustic wave device

Country Status (1)

Country Link
JP (1) JP5338396B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5882154B2 (en) * 2012-07-19 2016-03-09 太陽誘電株式会社 Method for manufacturing acoustic wave device
JP6362327B2 (en) * 2013-12-26 2018-07-25 太陽誘電株式会社 Elastic wave device and manufacturing method thereof
JP2018026673A (en) * 2016-08-09 2018-02-15 株式会社ディスコ Wafer processing method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009583A (en) * 2000-06-26 2002-01-11 Matsushita Electric Ind Co Ltd Piezoelectric device and its manufacturing method
JP2003115734A (en) * 2001-10-09 2003-04-18 Matsushita Electric Ind Co Ltd Surface acoustic wave device and manufacturing method thereof
JP3917405B2 (en) * 2001-10-31 2007-05-23 株式会社東芝 Manufacturing method of electronic component device
JP4692024B2 (en) * 2005-03-04 2011-06-01 パナソニック株式会社 Surface acoustic wave device
WO2006134928A1 (en) * 2005-06-16 2006-12-21 Murata Manufacturing Co., Ltd. Piezoelectric device and manufacturing method thereof
JP2007130768A (en) * 2005-11-08 2007-05-31 Seiko Epson Corp Cutting method of quartz substrate
JP2007158212A (en) * 2005-12-08 2007-06-21 Matsushita Electric Ind Co Ltd Electronic components, and cutting method thereof
EP2159916B1 (en) * 2007-02-28 2018-07-11 Murata Manufacturing Co. Ltd. Branching filter and its manufacturing method
JP4906557B2 (en) * 2007-03-28 2012-03-28 京セラ株式会社 Manufacturing method of surface acoustic wave device
KR101484296B1 (en) * 2007-06-26 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor substrate, manufacturing method of the semiconductor substrate, and semiconductor device and electronic device using the same

Also Published As

Publication number Publication date
JP2010213144A (en) 2010-09-24

Similar Documents

Publication Publication Date Title
JP2007235008A (en) Dividing method for wafer, and chip
JP2003174345A (en) Manufacturing method of surface acoustic wave filter package
JP2007096115A (en) Manufacturing method of semiconductor device
US20060160273A1 (en) Method for wafer level packaging
JP2012069747A (en) Semiconductor device and method of manufacturing the same
JP5338396B2 (en) Manufacturing method of surface acoustic wave device
JP2014045142A (en) Semiconductor device and semiconductor device manufacturing method
JP5262573B2 (en) Method for manufacturing acoustic wave device
JP2018128703A (en) Wafer structure
JP5882154B2 (en) Method for manufacturing acoustic wave device
JP2010212832A (en) Method of manufacturing surface acoustic wave device
JP2011077429A (en) Workpiece dividing method
CN105632911A (en) Wafer level package method for reducing edge stress
WO2007069456A1 (en) Semiconductor device manufacturing method
JP2009200648A (en) Frequency adjusting method for piezoelectric vibration device
JP2020174393A (en) Frequency adjustment method of piezoelectric vibration device
TWI525763B (en) Chip package and method for forming the same
WO2012120694A1 (en) Method of manufacturing wafer level package and wafer level package
JP4881337B2 (en) Semiconductor device
JP2005102113A (en) Fbar element and manufacturing method thereof
JP2009225256A (en) Acoustic wave device and manufacturing method therefor
JP5546363B2 (en) Semiconductor device and manufacturing method of semiconductor device
JP6523999B2 (en) Semiconductor device and method of manufacturing the same
JP2017069269A (en) Semiconductor device and method of manufacturing the same
KR100681264B1 (en) Electronic device package and method for fabricating the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120228

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120228

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20120313

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20121214

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130417

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130709

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130722

R151 Written notification of patent or utility model registration

Ref document number: 5338396

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250