JP5546363B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

  In recent years, after mounting semiconductor elements in a semiconductor device on a base material, batch sealing is performed for each area (MAP (Mold Area Package) method), and then cutting is performed to manufacture individual electronic components. Yes. Patent Document 1 describes information related to such a technique.

  In a conventional method for manufacturing a semiconductor device, first, a plurality of electrode terminals and a plurality of conductive plates are formed on a base material. Next, a plurality of semiconductor elements are arranged on each conductive plate. Next, the semiconductor element and the electrode terminal are connected by a wire. Next, the semiconductor element and the plurality of electrode terminals are collectively covered with a resin layer. Next, the resin layer is cut using a dicing blade, whereby individual pieces covered with resin for each semiconductor element are taken out as individual semiconductor devices.

  Water is used when the resin layer is cut using a dicing blade. In this case, since it takes time to dry the water after cutting the resin layer, development of a method capable of improving the productivity of the semiconductor device is desired.

JP 2008-218469 A

  The present invention has been conceived under the circumstances described above, and its main object is to provide a semiconductor device manufacturing method capable of improving the productivity of a semiconductor device.

  The method for manufacturing a semiconductor device provided by the first aspect of the present invention includes a step of forming a plurality of electrode terminals spaced from each other on a base material, a step of arranging a plurality of semiconductor elements on the base material, A step of forming a resin layer on the substrate having a portion disposed in a gap sandwiched between two adjacent electrode terminals, and covering the plurality of semiconductor elements, and irradiating a laser Forming a groove passing through the gap in the resin layer, and separating the resin layer into a plurality of resin portions each covering any of the plurality of semiconductor elements.

  In a preferred embodiment of the present invention, in the separating step, the groove is formed so as to extend in a second direction intersecting a first direction which is a direction in which the two electrode terminals are separated from each other.

  In a preferred embodiment of the present invention, the dimension of the groove in the first direction is larger than the separation distance of the two electrode terminals in the first direction.

  In a preferred embodiment of the present invention, in the separation step, the laser is irradiated with a wavelength that removes the resin layer and does not remove the plurality of electrode terminals.

  In a preferred embodiment of the present invention, in the separating step, the two electrode terminals are each exposed from one of the plurality of resin portions.

  In a preferred embodiment of the present invention, in the separating step, any of the plurality of electrode terminals is exposed from any of the plurality of resin portions.

  In a preferred embodiment of the present invention, in the step of forming the plurality of electrode terminals on the substrate, the plurality of electrode terminals are brought into contact with the substrate.

  In a preferred embodiment of the present invention, in the separating step, the direction from the resin layer toward the plurality of electrode terminals in the thickness direction of the resin layer intersecting the first direction and the second direction. Then, the laser is irradiated.

  In a preferred embodiment of the present invention, in the separating step, a direction from the plurality of electrode terminals toward the resin layer in a thickness direction of the resin layer intersecting the first direction and the second direction. Then, the laser is irradiated.

  In a preferred embodiment of the present invention, the method further includes the step of forming a plurality of conductive plates on the base material before the step of disposing the plurality of semiconductor elements, and the step of disposing the plurality of semiconductor elements. Each semiconductor element is disposed on one of the plurality of conductive plates.

  In a preferred embodiment of the present invention, in the step of arranging the plurality of semiconductor elements, each semiconductor element is electrically connected to one of the plurality of conductive plates.

  In preferable embodiment of this invention, the process of removing the said base material from the said resin layer is further provided before the said process to isolate | separate.

  In a preferred embodiment of the present invention, in the removing step, the plurality of electrode terminals are exposed from the resin layer.

  In a preferred embodiment of the present invention, in the separating step, the resin layer is disposed on a vacuum suction stage having a laser retracting groove, and the portion of the resin layer sandwiched between the two electrode terminals. Is opposed to the laser escape groove.

  A semiconductor device provided by the second aspect of the present invention covers a semiconductor element, a plurality of electrode terminals conducting to the semiconductor element, the semiconductor element and the plurality of electrode terminals, and surrounds the semiconductor element. A resin portion having a side surface and a bottom surface connected to the side surface, and each of the plurality of electrode terminals has a flat plate shape extending along the bottom surface, and has a first exposed surface exposed from the bottom surface. The entire side surface is a rough surface having a height difference larger than the height difference of the bottom surface.

  In preferable embodiment of this invention, the said resin part contains multiple spherical silica exposed by the said side surface over the said whole side surface.

  In a preferred embodiment of the present invention, each of the plurality of electrode terminals has a second exposed surface exposed from the side surface.

  In a preferred embodiment of the present invention, any of the plurality of electrode terminals includes a protruding portion protruding from the side surface.

  In a preferred embodiment of the present invention, the side surface is inclined with respect to a direction perpendicular to the bottom surface so as to form an acute angle with the bottom surface, and the resin portion is smoothly connected to the side surface and opposite to the bottom surface. It has a main surface facing side.

  In a preferred embodiment of the present invention, the side surface is inclined with respect to a direction perpendicular to the bottom surface so as to form an obtuse angle with the bottom surface, and is gently connected to the bottom surface.

  In a preferred embodiment of the present invention, the resin portion has a main surface that is connected to the side surface and faces away from the bottom surface, and the resin portion extends from the protruding portion to the main surface on the side surface. A band-shaped raised portion that rises in the direction in which the protruding portion protrudes is included.

  In a preferred embodiment of the present invention, each of the plurality of electrode terminals has a frustum shape having the first exposed surface as a bottom surface.

  In a preferred embodiment of the present invention, the plurality of electrode terminals are composed of a first plating layer constituting the first exposed surface and a conductor different from the first plating layer, and are laminated on the first plating layer. And a second plating layer made of a conductor different from the intermediate layer and laminated on the intermediate layer.

  In a preferred embodiment of the present invention, the semiconductor device further includes a conductive plate disposed and covered with the resin portion, the conductive plate having a flat plate shape extending along the bottom surface, and the bottom surface. Is exposed from.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is a perspective view of a semiconductor device according to a first embodiment of the present invention. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention. 1 is a front view of a semiconductor device according to a first embodiment of the present invention. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 3. FIG. 4 is a left side view of the semiconductor device shown in FIG. 3. FIG. 4 is a plan view (partially see through) of the semiconductor device shown in FIG. 3. It is sectional drawing which follows the VII-VII line of FIG. It is sectional drawing which follows the VIII-VIII line of FIG. FIG. 8 is a partial enlarged cross-sectional view of the semiconductor device shown in FIG. 7. It is a principal part top view which shows the process of forming the electrode terminal and conductive plate in the manufacturing process of the semiconductor device concerning 1st Embodiment of this invention. It is principal part sectional drawing which follows the BB line of FIG. 10A. It is principal part sectional drawing in alignment with CC line of FIG. 10A. It is a principal part top view which shows the process of forming the semiconductor element and wire following FIG. 10A. It is principal part sectional drawing which follows the BB line of FIG. 11A. It is principal part sectional drawing in alignment with CC line of FIG. 11A. It is a principal part top view (partially see through) which shows the process of forming the resin layer following FIG. 11A. It is principal part sectional drawing in alignment with the BB line of FIG. 12A. It is principal part sectional drawing in alignment with CC line of FIG. 12A. It is a principal part top view (partial transparency) which shows the process of removing the base material following FIG. 12A. It is principal part sectional drawing which follows the BB line of FIG. 13A. It is principal part sectional drawing in alignment with CC line of FIG. 13A. It is a principal part bottom view which shows the process of removing the base material following FIG. 12A. It is a principal part top view (partially see through) which shows the process of isolate | separating the resin layer following FIG. 13A into a resin part. It is principal part sectional drawing which follows the BB line of FIG. 14A. It is principal part sectional drawing in alignment with CC line of FIG. 14A. It is a principal part bottom view which shows the process of isolate | separating the resin layer following FIG. 13A into a resin part. It is a photograph which shows the cut surface when the thing which consists of the same material as a resin layer is cut | disconnected with a dicing blade, and the cut surface when the thing which consists of the same material as a resin layer is cut | disconnected by irradiating a laser. It is sectional drawing of the semiconductor device for showing the modification of an electrode terminal and a conductive plate. It is sectional drawing of the semiconductor device for showing the modification of an electrode terminal and a conductive plate. It is sectional drawing of the semiconductor device for showing the modification of an electrode terminal and a conductive plate. It is sectional drawing of the semiconductor device with which the 2nd exposed surface and the side surface of the resin part are flush. It is a perspective view of the semiconductor device concerning the modification of 1st Embodiment of this invention. It is a perspective view of the semiconductor device concerning the modification of 1st Embodiment of this invention. It is a top view (partially see through) of the semiconductor device concerning the modification of 1st Embodiment of this invention. It is a perspective view of the semiconductor device concerning 2nd Embodiment of this invention. It is a perspective view of the semiconductor device concerning 2nd Embodiment of this invention. It is a front view of the semiconductor device concerning a 2nd embodiment of the present invention. FIG. 26 is a bottom view of the semiconductor device shown in FIG. 25. FIG. 26 is a left side view of the semiconductor device shown in FIG. 25. FIG. 26 is a plan view (partially see through) of the semiconductor device shown in FIG. 25; It is sectional drawing which follows the XXIX-XXIX line | wire of FIG. It is sectional drawing which follows the XXX-XXX line of FIG. It is a principal part top view which shows the process of isolate | separating the resin part 32 in the resin layer in the manufacturing process of the semiconductor device concerning 2nd Embodiment of this invention. It is principal part sectional drawing which follows the BB line of FIG. 31A. It is principal part sectional drawing in alignment with CC line of FIG. 31A. It is a principal part bottom view (partially see-through | perspective view) which shows the process of isolate | separating the resin layer into the resin part in the manufacturing process of the semiconductor device concerning 2nd Embodiment of this invention. It is a perspective view of the semiconductor device concerning the modification of 2nd Embodiment of this invention. It is a perspective view of the semiconductor device concerning the modification of 2nd Embodiment of this invention. It is a top view (partially see through) of the semiconductor device concerning the modification of 2nd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.

  1st Embodiment of this invention is described using FIGS. 1 and 2 are perspective views of the semiconductor device according to the present embodiment. FIG. 3 is a front view of the semiconductor device according to the present embodiment. 4 is a bottom view of the semiconductor device shown in FIG. FIG. 5 is a left side view of the semiconductor device shown in FIG. 6 is a plan view (partially see through) of the semiconductor device shown in FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. FIG. 9 is a partially enlarged cross-sectional view of region 88 of FIG.

  The semiconductor device A1 shown in these drawings includes a resin portion 1, a semiconductor element 2, four electrode terminals 3, a conductive plate 4, and four wires 5. The semiconductor device A1 has, for example, a MAP (Mold Area Package) type structure. The dimension in the direction x of the semiconductor device A1 is about several mm (for example, 1 mm to 2 mm). The dimension in the direction y of the semiconductor device A1 is about several mm (for example, 1 mm to 2 mm). The dimension in the direction z of the semiconductor device A1 is, for example, about 0.5 to 0.85 mm.

  As shown in FIG. 7, the resin portion 1 covers the semiconductor element 2, the electrode terminal 3, the conductive plate 4, and the wire 5. The resin portion 1 is for protecting the semiconductor element 2, the electrode terminal 3, the conductive plate 4, and the wire 5. The resin part 1 consists of an epoxy resin, for example. As shown in FIG. 9, in the present embodiment, the resin portion 1 includes a plurality of spherical silica 11. As shown in FIG. 7, the resin portion 1 has a main surface 13, a side surface 14, and a bottom surface 15.

  The main surface 13 and the bottom surface 15 are both planar and face opposite sides. As clearly shown in FIG. 6, the side surface 14 surrounds the semiconductor element 2 in the direction z. As shown in FIG. 7, the side surface 14 is connected to the main surface 13 and the bottom surface 15. In the present embodiment, the side surface 14 is smoothly connected to the main surface 13. The side surface 14 has a tapered shape that is slightly inclined with respect to the direction z so as to form an acute angle with the bottom surface 15. The dimension L1 in the direction x of the part from the bottom surface 15 to the main surface 13 in the side surface 14 is, for example, 10 μm to 20 μm. The side surface 14 is a rough surface having a height difference larger than the height difference of the bottom surface 15 throughout. In the present embodiment, a plurality of spherical silicas 11 are exposed on the entire side surface 14 (see FIG. 9). The diameter of each silica 11 is, for example, 5 μm to 40 μm. In the side surface 14, for example, 40 to 80 silica 11 are exposed per region of 0.5 mm in length and 0.5 mm (0.5 mm square) in width.

  The semiconductor element 2 is an IC chip such as a regulator IC. A plurality of electrodes (not shown) are formed on the semiconductor element 2. Each dimension of the semiconductor element 2 in the direction x and the direction y is, for example, about 0.55 mm. The dimension in the direction z of the semiconductor element 2 is, for example, about 0.23 mm.

  As clearly shown in FIG. 7, each electrode terminal 3 functions as a mounting electrode when the semiconductor device A <b> 1 is mounted on the circuit board 81. Each electrode terminal 3 has a flat plate shape extending along the bottom surface 15. The dimensions of each electrode terminal in the direction x, the direction y, and the direction z are, for example, 200 μm, 200 μm, and 30 to 200 μm, respectively.

  Each electrode terminal 3 has a first exposed surface 31 and a second exposed surface 32. The first exposed surface 31 is exposed from the bottom surface 15. The first exposed surface 31 is flush with the bottom surface 15. Each electrode terminal 3 has a frustum shape with the first exposed surface 31 as a bottom surface. The shape of each electrode terminal 3 is not necessarily a frustum shape, but is a rectangular parallelepiped shape (see FIG. 16), an inverted frustum shape (see FIG. 17), or a wedge shape (see FIG. 18). Also good. The second exposed surface 32 is exposed from the side surface 14. The second exposed surface 32 may be flush with the side surface 14 as long as it is exposed from the side surface 14 (see FIG. 19). In the present embodiment, each electrode terminal 3 includes a protruding portion 34 protruding from the side surface 14. The projecting dimension from the side surface 14 of the electrode terminal 3, that is, the dimension L2 in the direction x of the projecting portion 34 is, for example, 10 μm to 30 μm.

  Each electrode terminal 3 includes a first plating layer 36, an intermediate layer 37, and a second plating layer 38. Each electrode terminal 3 has a laminated structure in which a first plating layer 36, an intermediate layer 37, and a second plating layer 38 are laminated. The first plating layer 36, the intermediate layer 37, and the second plating layer 38 are all made of a conductive material. The first plating layer 36 constitutes the first exposed surface 31. The first plating layer 36 is formed in order to prevent the intermediate layer 37 from being removed in the process of manufacturing the semiconductor device A1 described later. The second plating layer 38 is formed to prevent the intermediate layer 37 from being oxidized. The second plating layer 38 is further formed in order to improve the bondability with the wire 5 when the wire 5 is bonded. The material constituting the first plating layer 36 and the material constituting the intermediate layer 37 are different from each other. The material constituting the second plating layer 38 and the material constituting the intermediate layer 37 are different from each other. Examples of materials constituting the first plating layer 36, the intermediate layer 37, and the second plating layer 38 include Ag, Cu, and Ag, respectively. Alternatively, examples of materials constituting the first plating layer 36, the intermediate layer 37, and the second plating layer 38 include Ni / Ag, Cu, and Ni / Au, respectively.

  In each figure, each of the plurality of electrode terminals 3 is designated as electrode terminals 3a, 3b, 3c, 3d.

  As clearly shown in FIG. 7, the conductive plate 4 has a flat plate shape extending along the bottom surface 15. The dimensions of the conductive plate 4 in the direction x, the direction y, and the direction z are, for example, 600 μm, 600 μm, and 30 to 200 μm, respectively. In the figure, the size of the conductive plate 4 as viewed in the direction z is substantially the same as the size of the semiconductor element 2, but the conductive plate 4 as viewed in the direction z may be smaller or larger than the semiconductor element 2. Good.

  As clearly shown in FIG. 7, the conductive plate 4 has an exposed surface 41. The exposed surface 41 is exposed from the bottom surface 15. The exposed surface 41 is flush with the bottom surface 15. The conductive plate 4 has a frustum shape with the exposed surface 41 as a bottom surface. The shape of the conductive plate 4 is not necessarily a frustum shape, and may be a rectangular parallelepiped shape (see FIG. 16), an inverted frustum shape (see FIG. 17), or a wedge shape. A semiconductor element 2 is disposed on the conductive plate 4. Heat generated in the semiconductor element 2 is transmitted to the conductive plate 4. A conductive adhesive layer (not shown) may be interposed between the conductive plate 4 and the semiconductor element 2.

  The conductive plate 4 has the same laminated structure as each electrode terminal 3. That is, the conductive plate 4 has a laminated structure in which the first plating layer 46, the intermediate layer 47, and the second plating layer 48 are laminated. Since the first plating layer 46 is the same as the first plating layer 36, the intermediate layer 47 is the intermediate layer 37, and the second plating layer 48 is the same as the second plating layer 38, the first plating layer 46, the intermediate layer 47, and Description of the second plating layer 48 is omitted.

  Each of the plurality of wires 5 is bonded to an electrode (not shown) formed on the semiconductor element 2 and the electrode terminal 3. Thereby, the wire 5 has electrically connected the semiconductor element 2 and each electrode terminal 3. The wire 5 is made of, for example, Au, Cu, or Al.

  As shown in FIG. 7, the semiconductor device A <b> 1 is mounted on the circuit board 81 using the solder 82. The solder 82 adheres not only to the first exposed surface 31 but also to the second exposed surface 32. Therefore, the solder 82 is formed with a fillet 821 that is easily visible from the upper side of the figure. Further, solder 82 may be formed between the conductive plate 4 and the circuit board 81. By doing so, heat generated in the semiconductor element 2 is transmitted to the circuit board 81 through the conductive plate 4 and the solder 82. Therefore, the heat generated in the semiconductor element 2 can be quickly released to the outside of the semiconductor device A1. Furthermore, when the semiconductor element 2 has back surface conduction, electrical connection to the circuit board 81 is also possible.

  Next, a method for manufacturing the semiconductor device A1 will be described with reference to FIGS. 10A to 14D.

<Formation of electrode terminal and conductive plate>
FIG. 10A is a plan view of relevant parts showing a step of forming electrode terminals and a conductive plate. FIG. 10B is a cross-sectional view of main parts along the line BB in FIG. 10A. FIG. 10C is a cross-sectional view of main parts along the line CC in FIG. 10A.

  First, the base material 71 shown in these drawings is prepared. The base material 71 is made of, for example, Cu or stainless steel. Next, a plurality of electrode terminals 3 and a plurality of conductive plates 4 are formed on the base material 71. On the base material 71, the plurality of electrode terminals 3 and the plurality of conductive plates 4 are separated from each other. More specifically, on the base material 71, the electrode terminals 3a and 3b are alternately arranged along the direction x while being separated from each other. On the base material 71, the electrode terminals 3c and 3d are alternately arranged along the direction x while being separated from each other. On the other hand, on the base material 71, the electrode terminals 3a and 3c are alternately arranged along the direction y while being separated from each other. On the base material 71, the electrode terminals 3b and 3d are alternately arranged along the direction y while being separated from each other. Furthermore, on the base material 71, each conductive plate 4 is arrange | positioned so that it may be enclosed by electrode terminal 3a, 3b, 3c, 3d. The electrode terminals 3a, 3b, 3c, 3d and the conductive plate 4 are all in contact with the base material 71.

  As shown in FIGS. 10A and 10B, a gap 721 is formed on the base material 71 so as to be sandwiched between the electrode terminals 3 a and 3 b that are separated in the direction x. The electrode terminals 3a and 3b sandwiching the gap 721 are separated by a distance w1. Similarly, a gap 722 shown in the figure is formed on the base 71 between the electrode terminals 3c and 3d spaced apart in the direction x. The electrode terminals 3c and 3d sandwiching the gap 722 are separated by a distance w1. The distance w1 is, for example, 20 μm to 40 μm. As shown in FIGS. 10A and 10C, a gap 723 shown in the figure is formed on the base 71 between the electrode terminals 3 a and 3 c that are separated in the direction y. The electrode terminals 3a and 3c sandwiching the gap 723 are separated by a distance w2. On the base material 71, a gap 724 shown in the figure is formed between the electrode terminals 3b and 3d separated in the direction y. The electrode terminals 3b and 3d sandwiching the gap 724 are separated by a distance w2. The distance w2 is, for example, 120 μm to 160 μm.

  Formation of the plurality of electrode terminals 3 and the plurality of conductive plates 4 on the base material 71 uses an electroforming method. When the electroforming method is used, the base material 71 functions as a conductor for passing a current. Since the plurality of electrode terminals 3 and the plurality of conductive plates 4 are formed using an electroforming method, both of them are generally in the shape of a frustum having the base 71 side surface as a bottom surface. Various cross-sectional shapes are possible. As described above, each electrode terminal 3 has a laminated structure in which the first plating layer 36, the intermediate layer 37, and the second plating layer 38 are laminated with each other. Similarly, each conductive plate 4 has a laminated structure in which a first plating layer 46, an intermediate layer 47, and a second plating layer 48 are laminated with each other. The first plating layer 36 and the first plating layer 46, the intermediate layer 37 and the intermediate layer 47, the second plating layer 38 and the second plating layer 48 are made of the same material. The first plating layer 36 and the first plating layer 46 are formed simultaneously. The intermediate layer 37 and the intermediate layer 47 are formed simultaneously. The second plating layer 38 and the second plating layer 48 are formed simultaneously.

<Formation of semiconductor elements and wires>
FIG. 11A is a plan view of a principal part showing a step of forming a semiconductor element and a wire following FIG. 10A. FIG. 11B is a cross-sectional view of main parts along the line BB in FIG. 11A. FIG. 11C is a cross-sectional view of main parts along the line CC in FIG. 11A.

  Next, as shown in FIGS. 11A to 11C, a plurality of semiconductor elements 2 are arranged on the base material 71. More specifically, a plurality of semiconductor elements 2 are bonded to each conductive plate 4 one by one. In order to join the semiconductor element 2 to the conductive plate 4, for example, a conductive adhesive can be used. Next, the wire 5 is bonded to the electrode (not shown) formed on the semiconductor element 2 and the adjacent electrode terminal 3.

<Formation of resin layer>
FIG. 12A is a plan view (partially see through) of relevant parts showing a step of forming a resin layer subsequent to FIG. 11A. 12B is a cross-sectional view of main parts along the line BB in FIG. 12A. FIG. 12C is a cross-sectional view of a principal part taken along line CC in FIG. 12A.

  Next, as illustrated in FIGS. 12A to 12C, a resin layer 74 is formed on the base material 71. The resin layer 74 covers the semiconductor element 2, the plurality of electrode terminals 3, and the plurality of conductive plates 4. Further, the resin layer 74 has portions disposed in the gaps 721 to 724. The resin layer 74 is large enough to cover, for example, several hundred to several thousand semiconductor elements 2 in the xy plan view.

<Removal of base material>
FIG. 13A is a plan view (partially see through) of the principal part showing the step of removing the base material following FIG. 12A. FIG. 13B is a cross-sectional view of the main part along the line BB in FIG. 13A. FIG. 13C is a cross-sectional view of main parts along the line CC in FIG. 13A. FIG. 13D is a bottom view of relevant parts showing a step of removing the base material.

  Next, as shown in FIGS. 13A to 13D, the base material 71 is removed from the resin layer 74. In order to remove the base material 71, an etching process for selectively removing only the material constituting the base material 71 is performed. As shown in FIG. 13B, the first plating layer 36 is interposed between the base material 71 and the intermediate layer 37, respectively. Therefore, even if the materials constituting the base material 71 and the intermediate layer 37 are the same, the first plating layer 36 serves as a barrier against etching, and the intermediate layer 37 is not removed. Similarly, even if the materials constituting the base material 71 and the intermediate layer 47 are the same, the first plating layer 46 serves as a barrier against etching, and the intermediate layer 47 is not removed. By removing the base material 71, the plurality of electrode terminals 3 and the plurality of conductive plates 4 are exposed from the resin layer. In this way, an intermediate body 76 in which the plurality of electrode terminals 3 and the plurality of conductive plates 4 are exposed from the resin layer 74 can be obtained.

<Separation into resin part>
FIG. 14A is a principal part plan view (partially see through) showing a process of separating the resin layer subsequent to FIG. 13A into a resin part. FIG. 14B is a cross-sectional view of the main part along the line BB in FIG. 14A. FIG. 14C is a cross-sectional view of main parts along the line CC in FIG. 14A. FIG. 14D is a main part bottom view showing a step of separating the resin layer into resin parts.

  Next, as illustrated in FIGS. 14A to 14D, the resin layer 74 is separated into a plurality of resin portions 1. In order to separate the resin layer 74 into the plurality of resin portions 1, the laser layer 77 is irradiated with a laser 77. When irradiating the resin layer 74 with the laser 77, the intermediate body 76 shown in FIGS. 13A to 13D is held on a vacuum suction stage 78 (not shown in FIGS. 14A and 14D). The intermediate body 76 is arranged with the side where the plurality of electrode terminals 3 are exposed facing the vacuum suction stage 78. The vacuum suction stage 78 has a plurality of laser retracting grooves 781 and a plurality of suction holes (not shown). In a state where the intermediate body 76 is held by the vacuum suction stage 78, the laser retracting groove 781 overlaps the gaps 721 to 724 in the direction z. The laser retracting groove 781 is for preventing the surface of the vacuum suction stage 78 from being damaged even when the laser 77 is irradiated on the vacuum suction stage 78.

  In the present embodiment, the direction of irradiating the laser 77 is the direction from the upper side to the lower side of FIGS. 14B and 14C, that is, the direction from the resin layer 74 to the plurality of electrode terminals 3 in the direction z. The wavelength of the laser 77 belongs to a range in which the resin layer 74 is removed and the electrode terminal 3 is not removed. The range is, for example, 532 to 1064 nm. Examples of the laser 77 having such a wavelength include a YAG laser and a half wavelength green laser. The spot diameter of the laser 77 is, for example, 20 μm to 30 μm.

  By irradiating the resin layer 74 with the laser 77, a plurality of first grooves 741 and a plurality of second grooves 742 are formed in the resin layer 74. Each first groove 741 extends along the direction y and passes through the gaps 721 and 722. On the other hand, each second groove 742 extends along the direction x and passes through the gaps 723 and 724. When the laser 77 is scanned once or a plurality of times (for example, 4 or 5 times), the first groove 741 and the second groove 742 penetrate the resin layer 74. The plurality of first grooves 741 and the plurality of second grooves 742 penetrate the resin layer 74, whereby the resin layer 74 is separated into the plurality of resin portions 1.

  The minimum dimension W1 in the direction x of each first groove 741 is preferably larger than the distance w1. The dimension W1 is, for example, 40 μm to 70 μm. By making the dimension W1 larger than the distance w1, the plurality of electrode terminals 3 are all exposed from the side surface 14. Further, the electrode terminal 3 is formed with a protruding portion 34 protruding from the side surface 14 of the resin portion 1. On the other hand, the minimum dimension W2 in the direction y of each second groove 742 is smaller than the distance w2.

  The side surface 14 of the resin part 1 is formed by irradiating a laser 77 and removing a part of the resin layer 74. Therefore, as described above (see FIG. 9), the side surface 14 tends to be a rough surface having a height difference larger than the height difference of the bottom surface 15 over the entire surface. In the present embodiment, the material constituting the resin layer 74 includes silica. By irradiating the laser 77, silica contained in the material constituting the resin layer 74 is melted and exposed as a plurality of spherical silica 11 on the side surface 14. 15 in FIG. 15 is a cut surface when an object made of the same material as the resin layer 74 is cut with a dicing blade, and 92 in FIG. 15 is cut by irradiating the object made of the same material as the resin layer 74 with a laser. The cut surface is shown. As shown in the figure, the cut surface shown by 92 has irregularities as compared to the cut surface shown by 91.

  In the present embodiment, the direction of irradiating the laser 77 is the direction from the upper side to the lower side of FIGS. 14B and 14C. Therefore, as described above (see FIG. 7), the side surface 14 is easily connected to the main surface 13 smoothly. Further, the side surface 14 tends to be tapered with a slight inclination with respect to the direction z so as to form an acute angle with the bottom surface 15.

  As described above, the semiconductor device A1 is manufactured.

  Next, the effect of this embodiment is demonstrated.

  In this embodiment, as shown in FIGS. 14B and 14C, the resin layer 74 is separated into a plurality of resin portions 1 by irradiating a laser 77 to form the first groove 741 and the second groove 742. doing. In the present embodiment, no dicing blade is used to separate the resin layer 74 into a plurality of resin portions 1. When a dicing blade is used, since water is used, it takes time to dry the water. Moreover, it is necessary to hold | maintain firmly so that the resin part 1 may not be scattered by water flow pressure, the centrifugal force at the time of drying, and the blowing force of air. On the other hand, according to the present embodiment, since the laser 77 is irradiated to separate the resin layer 74 into the plurality of resin portions 1, no water is required. Therefore, the labor of drying the moisture after separating the resin layer 74 into the plurality of resin portions 1 can be saved, and the external force at the time of separation is hardly applied, so that the holding force is small. Therefore, the method according to the present embodiment can improve the productivity of the semiconductor device A1, and is highly effective for a very small product in which it is difficult to secure the holding force for the resin portion 1.

  The manufacturing method according to the present embodiment is suitable for manufacturing a semiconductor device that can prevent a burr from being generated in the electrode terminal 3 and can easily grasp the mounting state. The reason is as follows.

  In this embodiment, since the electrode terminal 3 is formed using an electroforming method, no burr is originally generated. Further, the resin layer 74 is separated into a plurality of resin portions 1 using a laser 77, and a dicing blade is not used. Therefore, no burr is generated in the electrode terminal 3.

  When the first groove 741 is formed by irradiating the resin layer 74 with the laser 77, the position of the first groove 741 formed in the resin layer 74 may slightly shift from a desired position. In addition, when the first groove 741 is formed by irradiating the resin layer 74 with the laser 77, the width in the direction x of the first groove 741 may deviate from a desired width. Therefore, in the present embodiment, in consideration of these deviations, each first groove 741 is formed so that the width in the direction x of the first groove 741 is larger than the distance w1. As a result, even if the position of the first groove 741 is deviated from the desired position or the width of the first groove 741 in the direction x is deviated from the desired width, the width of the first groove 741 in the direction x. Can be larger than the distance w1. Actually, as shown in FIG. 14A, the width in the direction x of the first groove 741 is a dimension W1 larger than the distance w1. As a result, the electrode terminal 3 can be more reliably exposed from the side surface 14. When the electrode terminal 3 is exposed from the side surface 14, as shown in FIG. 7, a fillet 821 that can be easily seen from the upper side of the figure can be formed on the solder 82. Therefore, the manufacturing method according to the present embodiment is suitable for manufacturing a semiconductor device that can easily grasp the mounting state.

  As described above, the manufacturing method according to the present embodiment is suitable for manufacturing a semiconductor device that can prevent a burr from being generated in the electrode terminal 3 and can easily grasp the mounting state.

  When the resin layer 74 is diced using a dicing blade as in the past, the cutting speed along the direction y of the resin layer 74 is limited in order to suppress the generation of burrs at the electrode terminals 3. For this reason, conventionally, the resin layer 74 is diced at a slow cutting speed such that almost no burrs are generated. However, in the present embodiment, in order to separate the resin layer 74 into the plurality of resin portions 1, since the laser 77 is irradiated, no burrs are generated in the first place. Therefore, the cutting speed along the direction y of the resin layer 74 can be determined regardless of the presence or absence of burrs that may occur in the electrode terminals 3. Therefore, the method according to the present embodiment is suitable for improving the cutting speed of the resin layer 74 along the direction y. Therefore, the method according to the present embodiment is suitable for improving the productivity of the semiconductor device.

  In the present embodiment, the direction in which the laser 77 is irradiated is the direction from the resin layer 74 toward the plurality of electrode terminals 3 in the direction z. When irradiating the laser 77 in this way, the variation width of the value of the dimension L1 shown in FIG. 7 is large, but the variation width of the dimension W1 (the dimension of the first groove 741 in the part close to the electrode terminal 3) is so much. not big. Therefore, the value of the dimension W1 is easier to control than the value of the dimension L1. Therefore, according to the method according to the present embodiment, it is easy to manufacture the semiconductor device A1 in which the electrode terminal 3 is exposed from the side surface 14.

  In the present embodiment, each electrode terminal 3 has a frustum shape having the first exposed surface 31 as a bottom surface. Since the solder 82 also adheres to the second exposed surface 32 of each electrode terminal 3, the solder fillet 821 can be easily seen from the upper side of FIG.

  Next, a modified example of the present embodiment will be described with reference to FIGS. 20 and 21 are perspective views of a semiconductor device according to a modification of the present embodiment. FIG. 22 is a plan view (partially see through) of a semiconductor device according to a modification of the present embodiment.

  The semiconductor device A11 shown in these drawings differs from the above-described semiconductor device A1 in that it further includes four electrode terminals 3 in addition to the four electrode terminals 3a, 3b, 3c, and 3d. The electrode terminal 3 protrudes not only from the side surface 14 facing the direction x but also from the side surface 14 facing the direction y. The semiconductor device A11 can be manufactured by a method similar to the manufacturing method described in the first embodiment. Also with the semiconductor device A11, a solder fillet with high visibility can be attached to each electrode terminal 3 in the same manner as described regarding the semiconductor device A1.

  Next, a second embodiment of the present invention will be described with reference to FIGS. 23 to 31D. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

  FIG. 23 is a perspective view of a semiconductor device according to the second embodiment of the present invention. FIG. 24 is a perspective view of a semiconductor device according to the second embodiment of the present invention. FIG. 25 is a front view of a semiconductor device according to the second embodiment of the present invention. 26 is a bottom view of the semiconductor device shown in FIG. 27 is a left side view of the semiconductor device shown in FIG. 28 is a plan view (partially see through) of the semiconductor device shown in FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG. 30 is a cross-sectional view taken along line XXX-XXX in FIG.

  In the present embodiment, the direction in which the laser 77 is applied to the resin layer 74 in the step of separating the resin layer 74 into the plurality of resin portions 1 is opposite to that in the first embodiment.

  The semiconductor device A2 according to the present embodiment includes a resin portion 1, a semiconductor element 2, four electrode terminals 3, a conductive plate 4, and four wires 5. Since each structure of the semiconductor element 2, the electrode terminal 3, the conductive plate 4, and the wire 5 is the same as that in the first embodiment, the description thereof is omitted.

  As shown in FIG. 29, the resin portion 1 covers the semiconductor element 2, the electrode terminal 3, the conductive plate 4, and the wire 5. The resin portion 1 is for protecting the semiconductor element 2, the electrode terminal 3, the conductive plate 4, and the wire 5. The resin part 1 consists of an epoxy resin, for example. In the present embodiment, the resin portion 1 includes a plurality of spherical silicas 11 (see FIG. 9, not shown in the present embodiment). The resin part 1 has a main surface 13, a side surface 14, and a bottom surface 15.

  The main surface 13 and the bottom surface 15 are both planar and face opposite sides. As clearly shown in FIG. 28, the side surface 14 surrounds the semiconductor element 2 in the direction z. As shown in FIG. 29, the side surface 14 is connected to the main surface 13 and the bottom surface 15. In the present embodiment, the side surface 14 is smoothly connected to the bottom surface 15. The side surface 14 has a tapered shape that is slightly inclined with respect to the direction z so as to form an obtuse angle with the bottom surface 15. A dimension L4 (see FIG. 25) in the direction x of the portion from the main surface 13 to the bottom surface 15 of the side surface 14 is, for example, 10 μm to 20 μm. The side surface 14 is a rough surface having a height difference larger than the height difference of the bottom surface 15 throughout. Also in the present embodiment, a plurality of spherical silicas 11 are exposed over the entire side surface 14 (see FIG. 9, not shown in the present embodiment).

  In the present embodiment, the resin portion 1 includes a plurality of belt-like raised portions 16a, 16b, 16c, and 16d. As shown in FIG. 25, the protruding portion 16 a has a shape that protrudes from the protruding portion 34 of the electrode terminal 3 a to the main surface 13 in the side surface 14 in the direction in which the protruding portion 34 of the electrode terminal 3 a protrudes. Similarly, the protruding portion 16b has a shape that protrudes from the protruding portion 34 of the electrode terminal 3b to the main surface 13 on the side surface 14 in the protruding direction of the protruding portion 34 of the electrode terminal 3b. Similarly, the protruding portion 16 c has a shape that protrudes in the direction in which the protruding portion 34 of the electrode terminal 3 c protrudes from the protruding portion 34 of the electrode terminal 3 c to the main surface 13 on the side surface 14. Similarly, the protruding portion 16d has a shape protruding on the side surface 14 from the protruding portion 34 of the electrode terminal 3d to the main surface 13 in a direction in which the protruding portion 34 of the electrode terminal 3d protrudes. In the figure, the raised portions 16a, 16b, 16c, and 16d are schematically shown. The corners of the raised portions 16a, 16b, 16c, and 16d are not sharp as illustrated, and may be curved.

  Next, a method for manufacturing the semiconductor device A2 will be described with reference to FIGS. 31A to 31D. In the present embodiment, similarly to the first embodiment, the process of removing the base material 71 is performed, and the intermediate body 76 shown in FIGS. 13A to 13D is manufactured.

<Separation into resin part>
FIG. 31A is a plan view of relevant parts showing a step of separating the resin layer into resin parts. FIG. 31B is a cross-sectional view of main parts along the line BB in FIG. 31A. FIG. 31C is a main-portion cross-sectional view along the line CC in FIG. 31A. FIG. 31D is an essential part bottom view (partially see through) showing the step of separating the resin layer into resin parts.

  Next, as shown in FIGS. 31A to 31D, the resin layer 74 is separated into a plurality of resin portions 1. In order to separate the resin layer 74 into the plurality of resin portions 1, the laser layer 77 is irradiated with a laser 77. When the resin layer 74 is irradiated with the laser 77, the intermediate body 76 is held on the vacuum suction stage 78. The intermediate body 76 is arranged with the side opposite to the side where the plurality of electrode terminals 3 are exposed facing the vacuum suction stage 78. The vacuum suction stage 78 has a plurality of laser retracting grooves 781 and a plurality of suction holes (not shown). In a state where the intermediate body 76 is held by the vacuum suction stage 78, the laser retracting groove 781 overlaps the gaps 721 to 724 in the direction z.

  In the present embodiment, the direction of irradiating the laser 77 is the direction from the upper side to the lower side of FIGS. 31B and 31C, that is, the direction from the plurality of electrode terminals 3 to the resin layer 74 in the direction z. The wavelength of the laser 77 belongs to a range in which the resin layer 74 is removed and the electrode terminal 3 is not removed. The range is, for example, 532 to 1064 nm. Examples of the laser 77 having such a wavelength include a YAG laser and a half wavelength green laser. The spot diameter of the laser 77 is, for example, 20 μm to 30 μm.

  By irradiating the resin layer 74 with the laser 77, a plurality of third grooves 743 and a plurality of fourth grooves 744 are formed in the resin layer 74. Each third groove 743 extends along the direction y and passes through the gaps 721 and 722. On the other hand, each fourth groove 744 extends along the direction x and passes through the gaps 723 and 724. When the laser 77 is scanned once or a plurality of times (for example, 4, 5 times), the third groove 743 and the fourth groove 744 penetrate the resin layer 74. The plurality of third grooves 743 and the plurality of fourth grooves 744 penetrate the resin layer 74, whereby the resin layer 74 is separated into the plurality of resin portions 1.

  The minimum dimension W3 in the direction x of each third groove 743 is preferably larger than the distance w1. The dimension W3 is, for example, 40 μm to 70 μm. By making the dimension W3 larger than the distance w1, the plurality of electrode terminals 3 are all exposed from the side surface 14. Further, the electrode terminal 3 is formed with a protruding portion 34 protruding from the side surface 14 of the resin portion 1. On the other hand, the minimum dimension W4 in the direction y of each fourth groove 744 is smaller than the distance w2.

  The side surface 14 of the resin part 1 is formed by irradiating a laser 77 and removing a part of the resin layer 74. Therefore, as described above, the side surface 14 tends to be a rough surface having a height difference larger than the height difference of the bottom surface 15 throughout. In the present embodiment, the direction of irradiation with the laser 77 is a direction from the plurality of electrode terminals 3 toward the resin layer 74 in the direction z. Therefore, as shown in FIG. 29, the side surface 14 is easily connected to the bottom surface 15 smoothly. Further, the side surface 14 tends to be tapered with a slight inclination with respect to the direction z so as to form an obtuse angle with the bottom surface 15. In the present embodiment, the laser 77 is blocked by the projecting portion 34 and a part of the resin layer 74 is not removed, and a plurality of belt-like raised portions 16 a, 16 b, 16 c, and 16 d are formed on the resin portion 1. In the present embodiment, the material constituting the resin layer 74 further includes silica. By irradiating the laser 77, the silica contained in the material constituting the resin layer 74 is melted and exposed as a plurality of spherical silica 11 on the side surface 14 (see FIG. 9, not shown in the present embodiment).

  As described above, the semiconductor device A2 is manufactured.

  Next, the effect of this embodiment is demonstrated.

  In this embodiment, as shown in FIGS. 31B and 31C, the resin layer 74 is separated into a plurality of resin portions 1 by irradiating the laser 77 to form the third groove 743 and the fourth groove 744. doing. In the present embodiment, no dicing blade is used to separate the resin layer 74 into a plurality of resin portions 1. When a dicing blade is used, since water is used, it takes time to dry the water. Moreover, it is necessary to hold | maintain firmly so that the resin part 1 may not be scattered by water flow pressure, the centrifugal force at the time of drying, and the blowing force of air. On the other hand, according to the present embodiment, since the laser 77 is irradiated to separate the resin layer 74 into the plurality of resin portions 1, no water is required. Therefore, the labor of drying the moisture after separating the resin layer 74 into the plurality of resin portions 1 can be saved, and the external force at the time of separation is hardly applied, so that the holding force is small. Therefore, the method according to the present embodiment can improve the productivity of the semiconductor device A2, and is highly effective for a very small product in which it is difficult to secure the holding force for the resin portion 1.

  For the same reason as described above in the first embodiment, the manufacturing method according to this embodiment manufactures a semiconductor device that can prevent a burr from being generated in the electrode terminal 3 and can easily grasp the mounting state. Suitable for

  For the same reason as described above in the first embodiment, according to this embodiment, the cutting speed along the direction y of the resin layer 74 can be improved. Therefore, the method according to the present embodiment is suitable for improving the productivity of the semiconductor device.

  Next, a modified example of the present embodiment will be described with reference to FIGS. 32 and 33 are perspective views of a semiconductor device according to a modification of the present embodiment. FIG. 34 is a plan view (partially see through) of a semiconductor device according to a modification of the present embodiment.

  The semiconductor device A21 shown in these drawings is different from the above-described semiconductor device A2 in that it further includes four electrode terminals 3 in addition to the four electrode terminals 3a, 3b, 3c, and 3d. The electrode terminal 3 protrudes not only from the side surface 14 facing the direction x but also from the side surface 14 facing the direction y. Further, in the semiconductor device A <b> 21, the resin portion 1 includes a plurality of raised portions 16 that are raised on the side 14 facing the direction y. The semiconductor device A21 can be manufactured by a method similar to the manufacturing method described in the second embodiment. Also with the semiconductor device A21, a solder fillet with high visibility can be attached to each electrode terminal 3 in the same manner as described for the semiconductor device A2.

  The scope of the present invention is not limited to the embodiment described above. The specific configuration of each part of the present invention can be changed in various ways.

  Electroforming may not be used to form each electrode terminal on the substrate. For example, each electrode terminal may be formed on the substrate using a metal foil lamination method, metal nanopaste printing, or a drawing method. In this case, the electrode terminal has a frustum shape, a rectangular parallelepiped shape, an inverted frustum shape, or a wedge shape.

A1, A11, A2, A21 Semiconductor device 1 Resin portion 11 Silica 13 Main surface 14 Side surface 15 Bottom surface 16, 16a, 16b, 16c, 16d Raised portion 2 Semiconductor element 3, 3a, 3b, 3c, 3d Electrode terminal 31 First exposure Surface 32 Second exposed surface 34 Projection 36 First plating layer 37 Intermediate layer 38 Second plating layer 4 Conductive plate 41 Exposed surface 46 First plating layer 47 Intermediate layer 48 Second plating layer 5 Wire 71 Base materials 721 to 724 74 Resin layer 741 1st groove 742 2nd groove 743 3rd groove 744 4th groove 76 Intermediate body 77 Laser 78 Vacuum suction stage 781 Laser retracting groove 81 Circuit board 82 Solder 821 Fillet L1, L2, L4 Dimensions W1 , W2, W3, W4 Dimensions w1, w2 Distance

Claims (24)

Forming a plurality of electrode terminals spaced apart from each other on a substrate;
Arranging a plurality of semiconductor elements on the substrate;
Forming a resin layer on the substrate having a portion disposed in a gap sandwiched between two adjacent electrode terminals among the plurality of electrode terminals, and covering the plurality of semiconductor elements;
Separating the resin layer into a plurality of resin portions each covering any of the plurality of semiconductor elements by irradiating a laser and forming a groove passing through the gap in the resin layer ,
In the separation step, the groove is formed to extend in a second direction intersecting a first direction that is a direction in which the two electrode terminals are separated from each other,
The dimension of the groove in the first direction is larger than the separation distance of the two electrode terminals in the first direction,
In the separating step, the laser is irradiated at a wavelength that removes the resin layer and does not remove the plurality of electrode terminals,
In the above-described separation to step, the two electrode terminals, respectively, Ru is exposed from one of the plurality of the resin portion, a method of manufacturing a semiconductor device. Forming a plurality of electrode terminals spaced apart from each other on a substrate;
Arranging a plurality of semiconductor elements on the substrate;
Forming a resin layer on the substrate having a portion disposed in a gap sandwiched between two adjacent electrode terminals among the plurality of electrode terminals, and covering the plurality of semiconductor elements;
Separating the resin layer into a plurality of resin portions each covering any of the plurality of semiconductor elements by irradiating a laser and forming a groove passing through the gap in the resin layer ,
In the separation step, the groove is formed to extend in a second direction intersecting a first direction that is a direction in which the two electrode terminals are separated from each other,
The dimension of the groove in the first direction is larger than the separation distance of the two electrode terminals in the first direction,
In the separating step, the laser is irradiated at a wavelength that removes the resin layer and does not remove the plurality of electrode terminals,
In the above-described separation to process, any of the plurality of electrode terminals Ru also exposed from one of the plurality of the resin portion, a method of manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of forming the plurality of electrode terminals on the base material, the plurality of electrode terminals are brought into contact with the base material. Forming a plurality of electrode terminals spaced apart from each other on a substrate;
Arranging a plurality of semiconductor elements on the substrate;
Forming a resin layer on the substrate having a portion disposed in a gap sandwiched between two adjacent electrode terminals among the plurality of electrode terminals, and covering the plurality of semiconductor elements;
Separating the resin layer into a plurality of resin portions each covering any of the plurality of semiconductor elements by irradiating a laser and forming a groove passing through the gap in the resin layer,
In the step of forming the plurality of electrode terminals on the substrate, the plurality of electrode terminals are brought into contact with the substrate,
A semiconductor device that irradiates the laser in a direction from the resin layer toward the plurality of electrode terminals in a thickness direction of the resin layer intersecting the first direction and the second direction in the separating step; Manufacturing method. Forming a plurality of electrode terminals spaced apart from each other on a substrate;
Arranging a plurality of semiconductor elements on the substrate;
Forming a resin layer on the substrate having a portion disposed in a gap sandwiched between two adjacent electrode terminals among the plurality of electrode terminals, and covering the plurality of semiconductor elements;
Separating the resin layer into a plurality of resin portions each covering any of the plurality of semiconductor elements by irradiating a laser and forming a groove passing through the gap in the resin layer,
In the step of forming the plurality of electrode terminals on the substrate, the plurality of electrode terminals are brought into contact with the substrate,
A semiconductor device that irradiates the laser in a direction from the plurality of electrode terminals toward the resin layer in a thickness direction of the resin layer intersecting the first direction and the second direction in the separating step; Manufacturing method. 6. The manufacturing of a semiconductor device according to claim 4 , wherein, in the separating step, the groove is formed to extend in a second direction intersecting a first direction that is a direction in which the two electrode terminals are separated from each other. Method. The method of manufacturing a semiconductor device according to claim 6 , wherein a dimension of the groove in the first direction is larger than a separation distance of the two electrode terminals in the first direction. 8. The method of manufacturing a semiconductor device according to claim 7 , wherein, in the separating step, the laser is irradiated with a wavelength that removes the resin layer and does not remove the plurality of electrode terminals. The method for manufacturing a semiconductor device according to claim 8 , wherein in the separating step, the two electrode terminals are exposed from any one of the plurality of resin portions. Before the step of arranging the plurality of semiconductor elements, further comprising a step of forming a plurality of conductive plates on the substrate,
The method for manufacturing a semiconductor device according to claim 1, wherein, in the step of arranging the plurality of semiconductor elements, each semiconductor element is arranged on any of the plurality of conductive plates.   The method of manufacturing a semiconductor device according to claim 10, wherein, in the step of arranging the plurality of semiconductor elements, each semiconductor element is electrically connected to one of the plurality of conductive plates.   The method for manufacturing a semiconductor device according to claim 1, further comprising a step of removing the base material from the resin layer before the step of separating.   The method of manufacturing a semiconductor device according to claim 12, wherein in the removing step, the plurality of electrode terminals are exposed from the resin layer.   In the separating step, the resin layer is disposed on a vacuum suction stage having a laser retracting groove, and a portion of the resin layer sandwiched between the two electrode terminals is opposed to the laser retracting groove. A method for manufacturing a semiconductor device according to claim 1. A semiconductor element;
A plurality of electrode terminals electrically connected to the semiconductor element;
A resin portion that covers the semiconductor element and the plurality of electrode terminals and has a side surface that surrounds the semiconductor element and a bottom surface that is connected to the side surface;
Each of the plurality of electrode terminals is a flat plate extending along the bottom surface, and has a first exposed surface exposed from the bottom surface,
The semiconductor device, wherein the side surface is a rough surface having a height difference larger than a height difference of the bottom surface.   The semiconductor device according to claim 15, wherein the resin portion includes a plurality of spherical silica exposed on the side surface over the entire side surface.   The semiconductor device according to claim 15, wherein each of the plurality of electrode terminals has a second exposed surface exposed from the side surface.   18. The semiconductor device according to claim 17, wherein any one of the plurality of electrode terminals includes a protruding portion protruding from the side surface. The side surface is inclined with respect to a direction perpendicular to the bottom surface so as to form an acute angle with the bottom surface,
The semiconductor device according to claim 18, wherein the resin portion has a main surface that is gently connected to the side surface and faces away from the bottom surface.   The semiconductor device according to claim 18, wherein the side surface is inclined with respect to a direction perpendicular to the bottom surface so as to form an obtuse angle with the bottom surface, and is smoothly connected to the bottom surface. The resin part has a main surface that is connected to the side surface and faces away from the bottom surface,
21. The semiconductor device according to claim 20, wherein the resin portion includes a belt-like raised portion that protrudes in a direction in which the protruding portion protrudes from the protruding portion toward the main surface on the side surface.   The semiconductor device according to claim 15, wherein each of the plurality of electrode terminals has a frustum shape with the first exposed surface as a bottom surface.   The plurality of electrode terminals are different from the first plating layer constituting the first exposed surface, an intermediate layer made of a conductor different from the first plating layer and laminated on the first plating layer, and the intermediate layer The semiconductor device according to claim 15, further comprising: a second plating layer made of a conductor and laminated on the intermediate layer. A conductive plate on which the semiconductor element is disposed and covered with the resin portion;
The semiconductor device according to any one of claims 15 to 23, wherein the conductive plate has a flat plate shape extending along the bottom surface and is exposed from the bottom surface.