JP5337532B2 - Vacuum processing equipment - Google Patents

Vacuum processing equipment Download PDF

Info

Publication number
JP5337532B2
JP5337532B2 JP2009045032A JP2009045032A JP5337532B2 JP 5337532 B2 JP5337532 B2 JP 5337532B2 JP 2009045032 A JP2009045032 A JP 2009045032A JP 2009045032 A JP2009045032 A JP 2009045032A JP 5337532 B2 JP5337532 B2 JP 5337532B2
Authority
JP
Japan
Prior art keywords
sample
chamber
exhaust
load lock
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009045032A
Other languages
Japanese (ja)
Other versions
JP2010199460A (en
Inventor
和之 大野
正和 高橋
伸彦 神崎
賢 山木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2009045032A priority Critical patent/JP5337532B2/en
Publication of JP2010199460A publication Critical patent/JP2010199460A/en
Application granted granted Critical
Publication of JP5337532B2 publication Critical patent/JP5337532B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、真空処理装置に係り、特に、試料室に試料を導入する際に試料雰囲気を真空排気する真空予備室(ロードロック室)を備えた真空処理装置に関する。   The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus provided with a vacuum preliminary chamber (load lock chamber) for evacuating a sample atmosphere when a sample is introduced into a sample chamber.

真空処理装置の1種である半導体ウェーハやマスクを、測定,検査する装置では、試料を保持する試料室に予備排気室が接続されている。試料を真空の試料室に搬入する時には、真空予備室と大気搬送系との間のゲートバルブを開き予備排気室に試料を搬入する。次に予備排気室の真空排気を行い、試料室と接続するゲートバルブを開き、試料を試料室に搬入する。処理の完了した試料は、試料室と真空予備室間のゲートバルブが開き、真空予備室へと搬出される。真空予備室が大気開放され、試料は大気搬送系により搬出される。   In an apparatus for measuring and inspecting a semiconductor wafer or mask, which is a kind of vacuum processing apparatus, a preliminary exhaust chamber is connected to a sample chamber for holding a sample. When the sample is carried into the vacuum sample chamber, the gate valve between the vacuum preparatory chamber and the atmospheric transfer system is opened and the sample is carried into the preexhaust chamber. Next, the preliminary exhaust chamber is evacuated, the gate valve connected to the sample chamber is opened, and the sample is carried into the sample chamber. The processed sample is transported to the vacuum preparatory chamber by opening the gate valve between the sample chamber and the vacuum preparatory chamber. The vacuum preliminary chamber is opened to the atmosphere, and the sample is carried out by the atmospheric transfer system.

真空予備室を大気開放する時に、チャンバ内に浮遊しているパーティクル、または壁面に堆積したパーティクルが気流によって運ばれ試料に付着し製品の歩留まりを低下させる。   When the vacuum preliminary chamber is opened to the atmosphere, particles floating in the chamber or particles deposited on the wall surface are carried by the air flow and adhere to the sample, thereby reducing the yield of the product.

大気開放を行う際には真空予備室の圧力と注入する不活性ガスの圧力差が大きく給気弁周辺の流速が増大する。給気弁周辺の流速を下げるために給気流量を制御するスロースタートバルブや、給気口の表面積を大きくする拡散フィルタの活用が有効となる。   When opening the atmosphere, the pressure difference between the pressure in the vacuum prechamber and the inert gas to be injected is large, and the flow velocity around the air supply valve increases. In order to reduce the flow velocity around the air supply valve, it is effective to use a slow start valve that controls the air supply flow rate and a diffusion filter that increases the surface area of the air supply port.

大気開放時に急激な圧力変化を避けるために給気をしながら排気を行う技術が特許文献1に開示されている。   Patent Document 1 discloses a technique for performing exhaust while supplying air in order to avoid a sudden pressure change when the atmosphere is released.

特開2002−231783号公報JP 2002-231783 A

特許文献1に説明されているように、大気開放時に排気をおこないながら、給気を行うことで、急激な圧力変動を避けると共に排気の流れと共にパーティクルを排出することができる。しかしながら、給気に併せて排気も行うため、大気開放までに時間がかかる。また、真空雰囲気の圧力が低い場合には、給気と共に排気を行ったとしても、急激に発生する圧力勾配を抑制することは困難になる。即ち、大気開放時に圧力が大気圧付近まで上昇したときに、真空室内に乱流を発生させる可能性がある。   As described in Patent Document 1, by supplying air while exhausting when the atmosphere is released, it is possible to avoid sudden pressure fluctuations and discharge particles along with the flow of exhaust. However, since exhaust is performed together with the supply air, it takes time until the atmosphere is released. In addition, when the pressure in the vacuum atmosphere is low, it is difficult to suppress a pressure gradient that occurs suddenly even if exhaust is performed together with air supply. That is, turbulence may be generated in the vacuum chamber when the pressure rises to near atmospheric pressure when the atmosphere is released.

以下に、大気開放時に要する時間を抑制しつつ、圧力勾配の発生に基づくパーティクルの巻上げ防止を目的とする真空処理装置を説明する。   Below, a vacuum processing apparatus for the purpose of preventing the rolling-up of particles based on the generation of a pressure gradient while suppressing the time required for opening to the atmosphere will be described.

上記目的を達成するために、給気管からのガス導入によるロードロック室の大気開放のときに、ロードロック室内の圧力が所定の第1の圧力まで上昇したときに、排気管を用いたロードロック室内の排気を開始し、第1の圧力より高い第2の圧力まで、ロードロック室内の圧力が上昇したときに、排気管を用いた排気を停止する真空処理装置を提案する。   In order to achieve the above object, when the pressure in the load lock chamber rises to a predetermined first pressure when the load lock chamber is opened to the atmosphere by introducing gas from the air supply pipe, the load lock using the exhaust pipe is used. A vacuum processing apparatus is proposed that starts exhausting a room and stops exhaust using an exhaust pipe when the pressure in the load lock chamber rises to a second pressure higher than the first pressure.

上記構成によれば、大気開放に要する時間を抑制と、パーティクル巻上げの抑制の両立を実現することが可能となる。   According to the above configuration, it is possible to achieve both suppression of the time required for opening to the atmosphere and suppression of particle winding.

走査電子顕微鏡を含む真空処理装置の概略説明図。Schematic explanatory drawing of the vacuum processing apparatus containing a scanning electron microscope. 大気開放プロセスを説明するフローチャート。The flowchart explaining an air release process. 大気開放時のロードロック室内の経過時間と圧力の関係を説明するグラフ。The graph explaining the relationship between the elapsed time and the pressure in the load lock chamber when the atmosphere is open. ロードロック室内の試料の配置条件を説明する図。The figure explaining the arrangement | positioning conditions of the sample in a load lock chamber.

以下に、主として、真空予備室(ロードロック室)の大気開放時の給気口を、試料の上方中心付近に配置し、拡散フィルタやスロースタートバルブなどの流量制御弁を設けた真空処理装置を説明する。しかしながら、以下に説明する大気開放に関する手法は、発明の趣旨を変えない範囲で、他の真空処理装置にも適用が可能である。また、本実施例装置では、試料と真空予備室上蓋とのクリアランスを10mm以下とした。また、排気口は、試料下方の中心付近に配置した。更に、大気開放時に真空予備室の圧力が10Pa〜10000Paの圧力において給気と共に排気を行うと共に、この際に排気される流量は大気圧力において真空予備室の10%以下とした。   Below, a vacuum processing device is mainly provided with an air supply opening when the vacuum preparatory chamber (load lock chamber) is opened to the atmosphere near the upper center of the sample and provided with flow control valves such as a diffusion filter and a slow start valve. explain. However, the method relating to the air release described below can be applied to other vacuum processing apparatuses as long as the gist of the invention is not changed. Further, in this example apparatus, the clearance between the sample and the upper cover of the vacuum preliminary chamber was set to 10 mm or less. The exhaust port was arranged near the center below the sample. Further, when the pressure in the vacuum preparatory chamber is 10 Pa to 10000 Pa when the atmosphere is opened, the air is exhausted together with the supply air.

更に、大気開放を行う際に、給気弁を開く際には、給気自体をコントロールするスロースタートバルブや、拡散フィルタを利用して給気口周辺の急激な圧力勾配を制御しながら真空予備室の圧力を上昇させる。真空予備室の圧力が10Pa以上となったところで、排気弁を開き、給気と共に排気を行い、浮遊しているパーティクルを気流と共に真空予備室外部へ排出する。   In addition, when opening the air supply valve when releasing the atmosphere, a vacuum starter is used while controlling a sudden pressure gradient around the air supply port using a slow start valve that controls the air supply itself or a diffusion filter. Increase chamber pressure. When the pressure in the vacuum preparatory chamber becomes 10 Pa or more, the exhaust valve is opened, exhaust is performed together with air supply, and floating particles are discharged out of the vacuum preparatory chamber together with the airflow.

排出される容積は、真空予備室の圧力が10000Paおいて真空予備室の容量を置換えする容積とする。この際に試料と真空予備室上蓋とのクリアランスを10mm以下とすること及び試料の周囲に10mm以上の隙間をもち試料上面から下面に気流を作ることで給気口からの気流により試料上面に層流を保ち試料へのパーティクルの付着を抑制することができる。その後排気を止めて大気まで圧力を上昇させる。排気弁を閉める際の真空予備室の圧力は10000Pa以下として気流の乱れが発生する以前にパーティクルの排出を行う。   The discharged volume is a volume that replaces the capacity of the vacuum preliminary chamber when the pressure of the vacuum preliminary chamber is 10,000 Pa. At this time, the clearance between the sample and the upper cover of the vacuum prechamber is set to 10 mm or less, and a gap of 10 mm or more is formed around the sample to create an air flow from the upper surface of the sample to the lower surface. The flow can be maintained and the adhesion of particles to the sample can be suppressed. Then stop the exhaust and raise the pressure to the atmosphere. The pressure in the vacuum preparatory chamber when closing the exhaust valve is 10000 Pa or less, and particles are discharged before the turbulence of the air current occurs.

本実施例装置は、大気開放の時に、最適に排気を行うことで、大気開放時間を最短としながら、試料表面にパーティクルを付着させずに、巻き上がり、浮遊したパーティクルを効果的に排気と共に排出する装置である。   The apparatus of this embodiment effectively exhausts the particles that are rolled up and floated together with the exhaust gas without adhering to the sample surface while minimizing the air release time by optimally exhausting the air when the air is open. It is a device to do.

真空予備室の中で、試料の中心付近の上面に拡散フィルタを備えた給気管が用意される。給気管の噴出し口は試料に向かって緩やかに広がった形状を持ち粘性流領域で試料上面において層流を作り出す。給気管と試料の間にはパーティクルの要因となる可動部を設けてはならない。試料上面となる予備室の蓋は表面処理、及び洗浄により清浄に管理する。排気管は、試料の下面に配置する。試料下面にはチャンバ内が陽圧にならないように大気開放弁を設ける。   In the vacuum preliminary chamber, an air supply pipe having a diffusion filter on the upper surface near the center of the sample is prepared. The outlet of the supply pipe has a shape that gently spreads toward the sample, and creates a laminar flow in the upper surface of the sample in the viscous flow region. There should be no moving parts that cause particles between the air supply pipe and the sample. The cover of the preliminary chamber on the top surface of the sample is managed cleanly by surface treatment and cleaning. The exhaust pipe is disposed on the lower surface of the sample. An air release valve is provided on the lower surface of the sample so that the inside of the chamber does not become a positive pressure.

図1を参照して、測定,検査装置の一部を構成する真空処理装置の具体的な構成を説明する。本例の測定,検査装置は、試料室4,電子光学系を収納する鏡筒3、及び、予備排気室9を有する。試料室4と鏡筒3は接続されており、共に真空排気されている。試料室4と予備排気室9は通路5によって接続されており、通路5には試料室側ゲート弁6が設けられている。予備排気室9と大気は通路10によって接続され、通路10には、大気側ゲート弁11が設けられている。   With reference to FIG. 1, the specific structure of the vacuum processing apparatus which comprises a part of measuring and test | inspection apparatus is demonstrated. The measurement and inspection apparatus of this example has a sample chamber 4, a lens barrel 3 that houses an electron optical system, and a preliminary exhaust chamber 9. The sample chamber 4 and the lens barrel 3 are connected, and both are evacuated. The sample chamber 4 and the preliminary exhaust chamber 9 are connected by a passage 5, and a sample chamber side gate valve 6 is provided in the passage 5. The preliminary exhaust chamber 9 and the atmosphere are connected by a passage 10, and an atmosphere-side gate valve 11 is provided in the passage 10.

試料室4の底部には、試料室排気管7が接続されている。試料室排気管7には、試料室排気弁8と図示しない真空排気装置が設けられている。真空排気装置は例えば真空ポンプである。試料室排気弁8を開け、真空排気装置を運転することによって、試料室4内部は真空排気される。   A sample chamber exhaust pipe 7 is connected to the bottom of the sample chamber 4. The sample chamber exhaust pipe 7 is provided with a sample chamber exhaust valve 8 and a vacuum exhaust device (not shown). The vacuum exhaust device is, for example, a vacuum pump. By opening the sample chamber exhaust valve 8 and operating the vacuum exhaust device, the inside of the sample chamber 4 is evacuated.

予備排気室9の底部には、予備排気室排気管12及び大気開放管14が接続されている。予備排気室排気管12には、予備排気室排気弁13と図示しない真空排気装置が接続されている。予備排気室排気弁13を開け、真空排気装置を運転することによって、予備排気室9内部は真空排気される。   A preliminary exhaust chamber exhaust pipe 12 and an atmosphere release pipe 14 are connected to the bottom of the preliminary exhaust chamber 9. A preliminary exhaust chamber exhaust valve 13 and a vacuum exhaust device (not shown) are connected to the preliminary exhaust chamber exhaust pipe 12. By opening the preliminary exhaust chamber exhaust valve 13 and operating the vacuum exhaust device, the interior of the preliminary exhaust chamber 9 is evacuated.

大気開放管14には、大気に接続された大気開放弁15が設けられている。大気開放弁15は、逆止弁であり、且つ、所定の圧力より大きくなると開き、所定の圧力より小さくなると閉じる。大気開放弁15の作動圧は、大気圧より高ければよい。大気開放弁15は、制御弁又はリリース弁であってよい。予備排気室9内部が大気圧より高くなり更に所定の圧力より高くなると、大気開放弁15が開き、予備排気室9内の気体は、大気に放出される。それによって、予備排気室9内部が大気以上の設定した圧力よりも陽圧になることを防ぐ。   The atmosphere release pipe 14 is provided with an atmosphere release valve 15 connected to the atmosphere. The air release valve 15 is a check valve, and opens when the pressure is higher than a predetermined pressure, and closes when the pressure is lower than the predetermined pressure. The operating pressure of the air release valve 15 may be higher than the atmospheric pressure. The atmosphere release valve 15 may be a control valve or a release valve. When the inside of the preliminary exhaust chamber 9 becomes higher than the atmospheric pressure and further exceeds a predetermined pressure, the atmosphere release valve 15 is opened, and the gas in the preliminary exhaust chamber 9 is released to the atmosphere. This prevents the inside of the preliminary exhaust chamber 9 from becoming a positive pressure than the set pressure above the atmosphere.

予備排気室9の天井部には、給気管16が接続されている。給気管16には、給気弁17及び図示しない給気タンクが接続されている。給気弁は、スロー排気バルブ又は流量制御を併用したバルブとなる。給気弁17を開けることによって、給気タンクより予備排気室9内に乾燥窒素が導入される。本例では、乾燥窒素を使用するが、乾燥窒素以外の乾燥した不活性ガスであってもよい。なお、本実施例の真空処理装置は、図示しない制御装置によって制御され、上述のような給排気制御、及び後述する真空処理装置に関わる構成要素の動作を制御する。   An air supply pipe 16 is connected to the ceiling of the preliminary exhaust chamber 9. An air supply valve 17 and an air supply tank (not shown) are connected to the air supply pipe 16. The air supply valve is a slow exhaust valve or a valve combined with flow control. By opening the air supply valve 17, dry nitrogen is introduced into the preliminary exhaust chamber 9 from the air supply tank. In this example, dry nitrogen is used, but a dry inert gas other than dry nitrogen may be used. The vacuum processing apparatus of this embodiment is controlled by a control device (not shown), and controls the supply / exhaust control as described above and the operation of components related to the vacuum processing apparatus described later.

図1を参照して、試料1を外部から予備排気室9内に搬入し、更に試料室4に搬入する工程を説明する。試料室側ゲート弁6が閉じ予備排気室排気弁13及び給気弁17は閉じていて予備排気室は大気状態とする。大気側ゲート弁11を開ける。次に、試料1を、外部から通路10を経由して予備排気室9内に搬入し、試料ホルダ2上に固定する。大気側ゲート弁11を閉める。予備排気室排気弁13を開き、試料1が搬入された予備排気室9を真空排気する。試料室側ゲート弁6を開き真空状態の試料室4へ通路5を経由して試料1を試料ホルダに固定したまま搬送する。次に試料室側ゲート弁6を閉じる。   With reference to FIG. 1, a process of carrying the sample 1 from the outside into the preliminary exhaust chamber 9 and further carrying it into the sample chamber 4 will be described. The sample chamber side gate valve 6 is closed, the preliminary exhaust chamber exhaust valve 13 and the air supply valve 17 are closed, and the preliminary exhaust chamber is in an atmospheric state. Open the atmosphere side gate valve 11. Next, the sample 1 is carried into the preliminary exhaust chamber 9 from the outside via the passage 10 and fixed on the sample holder 2. The atmosphere side gate valve 11 is closed. The preliminary exhaust chamber exhaust valve 13 is opened, and the preliminary exhaust chamber 9 into which the sample 1 is carried is evacuated. The sample chamber side gate valve 6 is opened, and the sample 1 is transported to the sample chamber 4 in a vacuum state via the passage 5 while being fixed to the sample holder. Next, the sample chamber side gate valve 6 is closed.

次に、試料室4内の試料1を予備排気室9内に搬入し大気まで搬出する工程を説明する。試料室側ゲート弁6を開ける。なお予備排気室9内は真空排気されているものとする。次に、試料ホルダ2上に保持された試料1を、試料ホルダ2と共に、通路5を経由して試料室4から予備排気室9に搬入する。次に、試料室側ゲート弁6を閉じる。予備排気室排気弁13を閉じる。給気弁17を開ける。それによって、乾燥窒素が予備排気室9内に注入される。予備排気室9内の圧力が大気圧となったら、大気開放弁が開く。給気弁17を閉じて、大気側ゲート弁11を開け、大気開放弁が閉まる。試料1を、通路10を経由して外部に搬送する。   Next, the process of carrying the sample 1 in the sample chamber 4 into the preliminary exhaust chamber 9 and carrying it out to the atmosphere will be described. Open the sample chamber side gate valve 6. It is assumed that the preliminary exhaust chamber 9 is evacuated. Next, the sample 1 held on the sample holder 2 is carried together with the sample holder 2 from the sample chamber 4 to the preliminary exhaust chamber 9 via the passage 5. Next, the sample chamber side gate valve 6 is closed. The preliminary exhaust chamber exhaust valve 13 is closed. Open the air supply valve 17. Thereby, dry nitrogen is injected into the preliminary exhaust chamber 9. When the pressure in the preliminary exhaust chamber 9 becomes atmospheric pressure, the air release valve is opened. The air supply valve 17 is closed, the atmosphere side gate valve 11 is opened, and the atmosphere release valve is closed. The sample 1 is conveyed to the outside via the passage 10.

図1を参照して本実施例装置により、予備排気室を大気開放する方法を説明する。ここでは図1に示すように、試料ホルダ2上に保持された試料1が試料室4から搬出され、予備排気室9内に配置されているものとする。ステップ01にて、試料室側ゲート弁6を閉じる。ステップ02にて、予備排気室排気弁13を閉じる。ステップ03にて、予備排気給気弁17を開ける。乾燥窒素が、予備排気室9内に導入される。乾燥窒素はスロー排気バルブ及び流量制御を併用したバルブにより流量が徐々に増加する。予備排気室9の圧力が上昇する。ステップ04にて、予備排気室9内の圧力検出器である真空計18にて真空予備室の圧力が10Paまで上昇したことを確認しステップ05にて予備排気室排気弁13を開放する。   With reference to FIG. 1, a method for opening the preliminary exhaust chamber to the atmosphere using the apparatus of this embodiment will be described. Here, as shown in FIG. 1, it is assumed that the sample 1 held on the sample holder 2 is unloaded from the sample chamber 4 and arranged in the preliminary exhaust chamber 9. In step 01, the sample chamber side gate valve 6 is closed. In step 02, the preliminary exhaust chamber exhaust valve 13 is closed. In step 03, the preliminary exhaust air supply valve 17 is opened. Dry nitrogen is introduced into the preliminary exhaust chamber 9. The flow rate of dry nitrogen is gradually increased by a slow exhaust valve and a valve combined with flow control. The pressure in the preliminary exhaust chamber 9 increases. In step 04, it is confirmed by the vacuum gauge 18 which is a pressure detector in the preliminary exhaust chamber 9 that the pressure in the vacuum preliminary chamber has increased to 10 Pa. In step 05, the preliminary exhaust chamber exhaust valve 13 is opened.

予備排気室排気弁が接続する配管にはドライポンプに接続され数Paの圧力が用意される。予備排気室の圧力は、給気弁17からの流量と予備排気室排気弁13の流量のバランスする圧力まで一旦下がり、給気弁17からの流量の増加と共に徐々に上昇する。浮遊しているパーティクルは排気と共に予備排気室9から予備排気室配管12を通り排出される。ステップ06において排気時間の待ちを設定する。   A pipe connected to the preliminary exhaust chamber exhaust valve is connected to a dry pump and a pressure of several Pa is prepared. The pressure in the preliminary exhaust chamber temporarily decreases to a pressure that balances the flow rate from the supply valve 17 and the flow rate in the preliminary exhaust chamber exhaust valve 13, and gradually increases as the flow rate from the supply valve 17 increases. The floating particles are discharged together with the exhaust gas from the preliminary exhaust chamber 9 through the preliminary exhaust chamber pipe 12. In step 06, an exhaust time waiting is set.

このときに設定する待ち時間は、1000Paにおいて予備排気室の容量を置換えする容積を予備排気室排気弁が接続される排気系が排気する時間を設定する。その容積は大気状態で予備排気室9の10%の容積となる。ステップ07で予備排気室排気弁13を閉じる。予備排気室9の圧力はさらに上昇しステップ08で圧力が大気まで上昇したことを確認後、ステップ09大気開放弁15が開く。ステップ10で給気弁17を閉鎖する。   The waiting time set at this time sets the time for the exhaust system to which the auxiliary exhaust chamber exhaust valve is connected to exhaust the volume replacing the capacity of the auxiliary exhaust chamber at 1000 Pa. The volume is 10% of the preliminary exhaust chamber 9 in the atmospheric state. In step 07, the preliminary exhaust chamber exhaust valve 13 is closed. After confirming that the pressure in the preliminary exhaust chamber 9 has further increased and the pressure has increased to the atmosphere in step 08, the step 09 atmosphere release valve 15 is opened. In step 10, the supply valve 17 is closed.

図3は、図2に例示したフローチャートに沿って真空処理装置の各構成要素を制御したときの真空予備室内の圧力変化を示すグラフである。なお、本実施例では、おおよそ1000Paにて予備排気室排気弁13を閉じているが、10000Pa以下の他の圧力で閉じるようにしても良い。また、図4は、試料1と、予備排気室9内壁との位置関係を説明する図である。本実施例装置では、大気開放時における給気管16の開口が設けられた天井部と、試料1との距離が10mm以下とすると共に、試料1の周囲部(半導体ウェーハ縁部)と、予備排気室9の内壁側部との距離が10mm以上とするように構成した。換言すれば、点線で示す円筒の側部から半導体ウェーハの面方向に、10mm以上の間隔が保たれるように、試料が保持されている。なお、本実施例では、試料ホルダ2上に試料を配置する構成を説明しているが、予備排気室9と試料室4間を、試料ホルダなしで試料搬送する装置の場合は、予備排気室9内で試料を保持する試料保持機構が設けられる。   FIG. 3 is a graph showing a change in pressure in the vacuum preparatory chamber when each component of the vacuum processing apparatus is controlled along the flowchart illustrated in FIG. In the present embodiment, the preliminary exhaust chamber exhaust valve 13 is closed at approximately 1000 Pa, but may be closed at other pressures of 10,000 Pa or less. FIG. 4 is a diagram for explaining the positional relationship between the sample 1 and the inner wall of the preliminary exhaust chamber 9. In the apparatus of this embodiment, the distance between the ceiling portion provided with the opening of the air supply pipe 16 at the time of opening to the atmosphere and the sample 1 is 10 mm or less, the periphery of the sample 1 (semiconductor wafer edge), and preliminary exhaust. The distance from the inner wall side of the chamber 9 was set to 10 mm or more. In other words, the sample is held such that an interval of 10 mm or more is maintained from the side of the cylinder indicated by the dotted line in the surface direction of the semiconductor wafer. In the present embodiment, the configuration in which the sample is arranged on the sample holder 2 is described. However, in the case of an apparatus for transporting the sample between the preliminary exhaust chamber 9 and the sample chamber 4 without the sample holder, the preliminary exhaust chamber is provided. A sample holding mechanism is provided for holding the sample in 9.

1 試料
2 試料ホルダ
3 電子光学系鏡筒
4 試料室
5,10 通路
6 試料室側ゲート弁
7 試料室排気管
8 試料室排気弁
9 予備排気室
11 大気側ゲート弁
12 予備排気室排気管
13 予備排気室排気弁
14 大気開放管
15 大気開放弁
16 給気管
17 給気弁
18 真空計
DESCRIPTION OF SYMBOLS 1 Sample 2 Sample holder 3 Electro-optic system lens tube 4 Sample chambers 5 and 10 Passage 6 Sample chamber side gate valve 7 Sample chamber exhaust pipe 8 Sample chamber exhaust valve 9 Preliminary exhaust chamber 11 Air side gate valve 12 Preliminary exhaust chamber exhaust pipe 13 Preliminary exhaust chamber exhaust valve 14 Air release pipe 15 Air release valve 16 Air supply pipe 17 Air supply valve 18 Vacuum gauge

Claims (4)

真空室に連結され、当該真空室内に試料を導入するときに、当該試料雰囲気を真空排気するロードロック室と、当該ロードロック室内にガスを導入する給気管と、当該ロードロック室内の気体を排気する排気管と、当該給気管及び排気管による給排気を制御する制御装置を備えた真空処理装置において、
前記ロードロック室内の圧力を検出する検出器を備え、
前記制御装置は、前記給気管からのガス導入による前記ロードロック室の大気開放のときに、前記ロードロック室内の圧力が所定の第1の圧力まで上昇したことを、前記検出器が検出したときに、前記排気管を用いたロードロック室内の排気を開始し、前記第1の圧力より高い第2の圧力まで、前記ロードロック室内の圧力が上昇したことを、前記検出器が検出したときに、前記排気管を用いた排気を停止し、当該排気停止後、前記ロードロック室内が大気状態となるまで、前記給気管を用いた給気を行うよう、前記給排気を制御することを特徴とする真空処理装置。
A load lock chamber that is connected to a vacuum chamber and evacuates the sample atmosphere when a sample is introduced into the vacuum chamber, a supply pipe that introduces gas into the load lock chamber, and exhausts the gas in the load lock chamber In a vacuum processing apparatus provided with an exhaust pipe to be controlled and a control device for controlling supply and exhaust of the air supply pipe and the exhaust pipe,
A detector for detecting the pressure in the load lock chamber;
When the detector detects that the pressure in the load lock chamber has increased to a predetermined first pressure when the load lock chamber is opened to the atmosphere by introducing gas from the air supply pipe. When the detector detects that the pressure in the load lock chamber has started to be exhausted using the exhaust pipe and the pressure in the load lock chamber has increased to a second pressure higher than the first pressure. , Stopping the exhaust using the exhaust pipe, and controlling the supply / exhaust so as to supply air using the air supply pipe until the load lock chamber is in an atmospheric state after the exhaust is stopped. Vacuum processing equipment.
請求項1において、
前記制御装置は、10Pa乃至10000Paの範囲内にて、前記排気を行うことを特徴とする真空処理装置。
In claim 1,
The vacuum processing apparatus, wherein the control device performs the exhaust in a range of 10 Pa to 10,000 Pa.
請求項1において、
前記ロードロック室内にて試料を支持する支持台を備え、当該支持台は、前記試料と前記ロードロック室の内壁上面との距離より、前記試料と前記ロードロック室の内壁側面との距離が大きくなるように、前記試料を支持することを特徴とする真空処理装置。
In claim 1,
A support table for supporting the sample in the load lock chamber, wherein the support table has a greater distance between the sample and the inner wall side surface of the load lock chamber than a distance between the sample and the inner wall upper surface of the load lock chamber; The vacuum processing apparatus is characterized in that the sample is supported.
請求項3において、
前記試料と前記ロードロック室の内壁上面との距離が10mm以下、前記試料と前記ロードロック室の内壁側面との距離を10mm以上としたことを特徴とする真空処理装置。
In claim 3,
A vacuum processing apparatus characterized in that the distance between the sample and the upper surface of the inner wall of the load lock chamber is 10 mm or less, and the distance between the sample and the inner wall side surface of the load lock chamber is 10 mm or more.
JP2009045032A 2009-02-27 2009-02-27 Vacuum processing equipment Expired - Fee Related JP5337532B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009045032A JP5337532B2 (en) 2009-02-27 2009-02-27 Vacuum processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009045032A JP5337532B2 (en) 2009-02-27 2009-02-27 Vacuum processing equipment

Publications (2)

Publication Number Publication Date
JP2010199460A JP2010199460A (en) 2010-09-09
JP5337532B2 true JP5337532B2 (en) 2013-11-06

Family

ID=42823858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009045032A Expired - Fee Related JP5337532B2 (en) 2009-02-27 2009-02-27 Vacuum processing equipment

Country Status (1)

Country Link
JP (1) JP5337532B2 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186355A (en) * 1997-12-22 1999-07-09 Tokyo Electron Ltd Load locking mechanism, substrata processing device and substrate processing method
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
KR100470998B1 (en) * 2002-10-22 2005-03-10 삼성전자주식회사 Method for creating vacuum at load-lock chamber of semiconductor device fabricating equipment

Also Published As

Publication number Publication date
JP2010199460A (en) 2010-09-09

Similar Documents

Publication Publication Date Title
JP5155848B2 (en) N2 purge device for FOUP
KR101669752B1 (en) Substrate processing apparatus, method of manufacturing semiconductor device and recording medium
WO2017104485A1 (en) Storage device, vaporizer, substrate processing device, and method for manufacturing semiconductor device
TW201730927A (en) Substrate treating apparatus and substrate treating method
JP2007073746A (en) Substrate processing device
JP2010192513A (en) Plasma processing apparatus and method of operating the same
JP5337532B2 (en) Vacuum processing equipment
WO2012008439A1 (en) Substrate processing method and substrate processing system
JP2007142284A (en) Substrate treatment apparatus
JP4414869B2 (en) Vacuum processing equipment
JP2772835B2 (en) Substrate processing apparatus and vacuum processing method
JP5869003B2 (en) Load lock device and vacuum processing apparatus equipped with the same
TWI797469B (en) Substrate processing apparatus, manufacturing method of semiconductor device, and substrate processing program
JP2013236033A (en) Vacuum processing device and sample conveying method
JP2657254B2 (en) Processing apparatus and its exhaust method
JP2012129232A (en) Substrate processing apparatus and manufacturing method of semiconductor device
JP3320505B2 (en) Heat treatment apparatus and method
JP4490636B2 (en) Semiconductor manufacturing apparatus and semiconductor device manufacturing method
JP2010106303A (en) Semiconductor-manufacturing apparatus
JPH10303090A (en) Control system for vacuum vessel
JP2000271469A (en) Vacuum treating device
JPH11219908A (en) Substrate processor and method therefor
JPH10326730A (en) Semiconductor manufacturing device and its maintenance method
JP2020102518A (en) Deposition method
WO2014041656A1 (en) Vacuum processing device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110225

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130416

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130418

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130709

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130805

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees