JP5306941B2 - Sputtering equipment - Google Patents

Description

  The present invention relates to a sputtering apparatus including, for example, a chamber having a divided structure.

  A sputtering apparatus is widely used in the industry as one of film forming apparatuses for forming a thin film in a vacuum. The sputtering apparatus includes a vacuum chamber and a target installed inside the vacuum chamber. The target is sputtered by the ions in the plasma formed in the vacuum chamber, and the particles ejected from the target surface by the sputtering action are deposited on the substrate. Thereby, a thin film made of the constituent material of the target is formed on the substrate.

  The target is configured as a part of the sputtering cathode, like the backing plate and the magnet unit. The sputtering cathode is removed from the vacuum chamber, and maintenance and target replacement are performed. For this reason, an opening for installing the sputtering cathode into the chamber is formed on one side of the vacuum chamber, and the sputtering cathode is taken in and out of the chamber through this opening (see Patent Document 1). ).

  On the other hand, with the recent increase in substrate size, the vacuum chamber has also increased in size. For example, the vertical and horizontal dimensions of the substrate are expected to be about 2850 mm × 3250 mm in the 10th generation, and about 3200 mm × 3700 mm in the 11th generation. Increasing the size of the vacuum chamber causes problems in production cost, installation workability, and transportation.

  Therefore, it is known to solve the above problem by dividing the vacuum chamber. For example, Patent Document 2 below discloses a method of manufacturing a large vacuum chamber by forming a vacuum chamber main body by a plurality of chamber pieces and joining flange portions formed on the joining surfaces of the chamber pieces to each other. Have been described. The vacuum chamber has an internal sealing property secured by a seal member mounted between the flange portions joined together by a plurality of bolts.

JP 2003-328120 A Japanese Patent Laid-Open No. 2006-13795

  In a vacuum chamber having a divided structure, it is necessary to interpose a seal member between the joining surfaces of the chamber pieces in order to ensure the sealing performance of the divided region. Therefore, when the opening used for attaching / detaching the sputtering cathode is divided, the joining end portion of the chamber piece to which the seal member is attached is positioned so as to cross the opening, which makes it difficult to attach / detach the sputtering cathode to / from the vacuum chamber. It will be extreme.

  On the other hand, the sputtering cathode can also be divided to correspond to the divided structure of the openings. However, when the sputtering cathode is divided, the continuity or symmetry of the target with respect to the substrate surface is impaired, and in most cases, uniform film formation cannot be obtained over the entire surface of the substrate.

  In addition, even in a vacuum chamber having no divided structure, if the strength of the chamber cannot be ensured by forming the opening, a reinforcing structure (rib) is often formed so as to divide the opening. Such a case also has the same problem as described above.

  In view of the circumstances as described above, an object of the present invention is to provide a sputtering apparatus capable of ensuring the mounting workability of a sputtering cathode and the uniformity of film formation.

In order to achieve the above object, a sputtering apparatus according to one embodiment of the present invention includes a chamber, a first target unit, a second target unit, and a conversion mechanism.
The chamber has a first side including an opening and a rib that divides the opening into a first opening and a second opening. The first and second openings are arranged along the first direction. The chamber has a polyhedral shape that forms a space inside.
The first target unit has a plurality of target portions arranged at a first interval along the first direction. The plurality of target portions include a first target portion disposed in the space portion so as to face the rib in a second direction orthogonal to the first side surface. The first target unit is detachably installed in the space through the first opening.
The second target unit has a plurality of target portions arranged at the first interval along the first direction. The plurality of target portions are arranged in the space portion with the first interval with respect to the first target portion so as to face the ribs in the second direction. including. The second target unit is detachably installed in the space through the second opening.
The conversion mechanism has a first state in which the first and second target portions are opposed to the rib and a second state in which the rib is not opposed to the rib in the second direction. The conversion mechanism is for converting the first and second target portions from the first state to the second state, respectively, when the first and second target units are attached to and detached from the space portion. is there.

It is a plane view sectional view showing a schematic structure of a sputtering device by one embodiment of the present invention. It is a disassembled perspective view which shows the structure of the chamber of the said sputtering device. It is principal part sectional drawing which shows schematic structure of one sputtering cathode of the said sputtering device. It is a principal part perspective view which shows the structure of one sputtering cathode of the said sputtering device. It is a top view sectional view showing a schematic structure of a sputtering device by other embodiments of the present invention.

A sputtering apparatus according to an embodiment of the present invention includes a chamber, a first target unit, a second target unit, and a conversion mechanism.
The chamber has a first side including an opening and a rib that divides the opening into a first opening and a second opening. The first and second openings are arranged along the first direction. The chamber has a polyhedral shape that forms a space inside.
The first target unit has a plurality of target portions arranged at a first interval along the first direction. The plurality of target portions include a first target portion disposed in the space portion so as to face the rib in a second direction orthogonal to the first side surface. The first target unit is detachably installed in the space through the first opening.
The second target unit has a plurality of target portions arranged at the first interval along the first direction. The plurality of target portions are arranged in the space portion with the first interval with respect to the first target portion so as to face the ribs in the second direction. including. The second target unit is detachably installed in the space through the second opening.
The conversion mechanism has a first state in which the first and second target portions are opposed to the rib and a second state in which the rib is not opposed to the rib in the second direction. The conversion mechanism is for converting the first and second target portions from the first state to the second state, respectively, when the first and second target units are attached to and detached from the space portion. is there.

  In the sputtering apparatus, when the first and second target units are attached to and detached from the space portion, the ribs are moved from the first state where the first and second target portions are opposed to the ribs by the conversion mechanism. The conversion operation to the second state that is not opposed to the second state is possible. Therefore, according to the sputtering apparatus, when the first and second target units are attached and detached, interference between the first and second target portions and the rib can be prevented, and good workability can be ensured. .

  Further, when the first and second target units are mounted in the space portion, the first and second target portions can be arranged with a first interval. Accordingly, since the plurality of target portions of each target unit can be arranged at equal intervals in one direction in the space portion, the continuity or arrangement of the target portions with respect to the surface of the substrate accommodated in the space portion Symmetry is ensured. Therefore, according to the sputtering apparatus, it is possible to ensure the uniformity of film formation over the entire surface of the substrate.

  The rib that divides the opening of the chamber may be a reinforcing rib for increasing the strength of the chamber that has been lowered by the formation of the opening. When the chamber has a divided structure, the rib may be formed by a joint portion of each chamber block.

For example, the chamber may include a first chamber block and a second chamber block. The first chamber block has the first side surface having the first opening and the second side surface having a third opening formed therein. The second chamber block has the first side surface having the second opening and the third side surface having a fourth opening. The second chamber block forms an internal space including the third and fourth openings as the space portion by joining the third side surface to the second side surface.
On the other hand, the rib has a joint structure of a first end edge and a second end edge. The first end edge is formed between the first opening and the second side surface. The second end edge portion is formed between the second opening and the third side surface.
Thereby, it becomes possible to ensure the mounting property of the target unit and the film formation uniformity for the chamber having the divided structure.

In the sputtering apparatus having the chamber having the divided structure, the first target portion may face the first edge portion in the first state, and the second target portion may be the first target portion. In this state, it may be opposed to the second edge portion.
As a result, the first and second target units can be properly attached to the first and second openings.

As one embodiment of the conversion mechanism, the conversion mechanism may have a rotation axis parallel to a third direction orthogonal to the first and second directions. In this case, the conversion mechanism rotates the first and second target portions around the rotation shaft, thereby moving the first and second target portions from the first state to the second state. It can be converted to the state.
Thereby, the conversion mechanism can be configured with a simple configuration.

As another embodiment of the conversion mechanism, the conversion mechanism may include a guide unit that slides the first and second target units in the first direction. In this case, the first and second target portions can be converted from the first state to the second state by sliding the first and second target portions by the guide portion.
This can also simplify the configuration of the conversion mechanism.

The sputtering apparatus may further include a first magnet unit, a second magnet unit, and a moving mechanism.
The first magnet unit has a plurality of magnet portions facing the back side of the first target unit and arranged at a second interval along the first direction. The first magnet unit is detachably installed in the space through the first opening.
The second magnet unit has a plurality of magnet portions that face the back side of the second target unit and are arranged at a second interval along the first direction. The second magnet unit is detachably installed in the space through the second opening.
The moving mechanism moves the first and second magnet units in the first and second directions.

  The magnet unit constitutes a magnetic circuit for forming a magnetic field on the surface of each target unit. Thereby, a magnetron type sputtering apparatus is constituted. Since each magnet unit can be moved in the first direction with respect to the target unit by the moving mechanism, it is possible to extend the erosion region on the surface of the target unit and extend the life of the target unit. Further, since the facing distance between the target unit and the magnet unit is variable by the moving mechanism, the state between the target unit and the magnet unit is changed when the state of the first and second target units is changed during mounting. Interference can be prevented.

The first and second magnet units have a first position located inward of the third or fourth opening in the second direction, and an inner side of the third or fourth opening. And a second position that is not located at the second position. The moving mechanism may move the first and second magnet units from the first position to the second position when the first and second magnet units are attached to and detached from the space. .
Accordingly, when the first and second magnets are attached to and detached from the chamber, interference between the ribs of the chamber and each magnet unit can be prevented, and the mounting workability of the magnet unit can be ensured.

The moving mechanism may include a first moving unit and a second moving unit. The first moving unit moves the first magnet unit in the first and second directions. The second moving unit moves the second magnet unit in the first and second directions.
Thereby, it becomes possible to control movement of the first and second magnet units individually.

The sputtering apparatus may further include a first support plate and a second support plate. The first support plate supports the first target unit, the first magnet unit, and the first moving unit in common, and is detachably attached to the first opening. It is done. The second support plate supports the second target unit, the second magnet unit, and the second moving unit in common, and is detachably attached to the second opening. It is done.
Accordingly, the first and second target units, the magnet unit, and the moving unit can be collectively attached to and detached from the chamber as a set, and attachment / detachment workability can be improved.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
[overall structure]
FIG. 1 is a plan view sectional view showing a schematic configuration of a sputtering apparatus according to an embodiment of the present invention. The illustrated sputtering apparatus 100 includes a chamber 1 and sputtering cathodes 2 </ b> A and 2 </ b> B installed inside the chamber 1. In the figure, the x direction and the y direction indicate horizontal directions orthogonal to each other, and the z direction indicates a vertical direction.

  The sputtering apparatus 100 of this embodiment is configured as a vertical sputtering apparatus that forms a film in a posture in which a substrate is substantially upright. The sputtering apparatus 100 may be a stationary film formation method in which the film is formed while the substrate is stationary in the chamber, or a moving film formation method in which the film is formed while the substrate is moved in the chamber. The sputtering apparatus 100 of this embodiment is configured as a sputtering chamber in an in-line vacuum processing apparatus in which other vacuum processing chambers (a film forming chamber, a heat treatment chamber, a load lock chamber, etc.) are connected to both sides of the chamber 1. .

[Composition of chamber]
First, the configuration of the chamber 1 will be described.

  The chamber 1 has a joint structure of the first chamber block 10A and the second chamber block 10B. FIG. 2 is an exploded perspective view of the chamber 1. The chamber 1 includes a first chamber block 10A, a second chamber block 10B, and a seal ring 10C.

  The first and second chamber blocks 10A and 10B are made of, for example, a metal material such as stainless steel or aluminum alloy, and are formed into a polyhedral shape through processes such as punching, pressing, and welding. . In the present embodiment, each of the first and second chamber blocks has a rectangular parallelepiped shape (hexahedron) having the same size, but the shape is not limited thereto.

  The first chamber block 10A includes a back surface 11A (first side surface) in which a back surface opening portion 11Aw (first opening portion) is formed and an inner surface opening portion 12Aw (third opening portion). It has a side surface 12A (second side surface) and an outer surface 13A in which an outer surface opening 13Aw is formed. The first sputtering cathode 2A is attached to the back surface 11A, and the second chamber block 10B is connected to the inner surface 12A. A gate valve that opens and closes the outer surface opening 13Aw is connected to the outer surface 13A. The front surface 14A, the upper wall surface 15A, and the bottom wall surface 16A of the first chamber block 10A are all closed surfaces, but a maintenance opening / closing door or the like may be provided.

  The second chamber block 10B includes a back surface 11B (first side surface) in which a back surface opening portion 11Bw (second opening portion) is formed, and an inner surface opening portion 12Bw (fourth opening portion) in which the back surface opening portion 11Bw (second opening portion) is formed. It has a side surface 12B (third side surface) and an outer surface 13B in which an outer surface opening 13Bw is formed. The second sputtering cathode 2B is attached to the back surface 11B, and the first chamber block 10A is connected to the inner surface 12B. A gate valve that opens and closes the outer surface opening 13Bw is connected to the outer surface 13B. The front surface 14B, the upper wall surface 15B, and the bottom wall surface 16B of the second chamber block 10B are all closed surfaces, but a maintenance opening / closing door or the like may be provided.

  The inner surface 12A of the first chamber block 10A and the inner surface 12B of the second chamber block 10B are joined to each other via a seal ring 10C, whereby the chamber 1 is configured. The inner side surfaces 12A and 12B of the chamber blocks 10A and 10B each have an annular groove (only the groove 17A on the side surface 12A side is shown in FIG. 2) in which the seal ring 10C is mounted around the inner side opening portions 12Aw and 12Bw. Have. 1st and 2nd chamber block 10A, 10B is joined so that each back surface 11A, 11B may become the same surface, and it integrates using several bolt member.

  Each chamber block 10A, 10B may be integrally joined by welding. In this case, it is possible to omit the mounting of the seal ring 10C.

  Although not shown, the chamber 1 includes a gas introduction passage for introducing a process gas such as a sputtering gas into the space 19, an exhaust port communicating with a vacuum pump for evacuating the space 19, A power supply system for the drive system is provided.

  The chamber 1 configured as described above has two openings 11Aw and 11Bw arranged in the x direction in the drawing on the back surfaces 11A and 11B (hereinafter also simply referred to as “back surface 11”). Between these openings 11Aw and 11Bw, there is a structure (rib) 18 extending in the z direction. The structure 18 is formed so as to divide one opening formed in the back surface 11 of the chamber 1 into two openings. The structure 18 is configured by a joined body of a first end edge 18A on the first chamber block 10A side and a second end edge 18B on the second chamber block 10B side. The first edge 18A is formed on one side of the first chamber block 10A located between the back surface 11A and the inner surface 12A. The second end edge 18B is formed on one side of the second chamber block 10B located between the back surface 11B and the inner surface 12B.

  Further, the chamber 1 configured as described above has a space portion 19 inside. The space portion 19 corresponds to the sum of the space portions of the first and second chamber blocks 10A and 10B coupled via the inner side surface openings 12Aw and 12Bw. The space 19 holds the substrate S to be deposited in a substantially upright state, and is capable of moving in the space 19 in the x direction, and a carrier C transport mechanism (not shown), and a first sputtering cathode. 2A and a second sputtering cathode 2B are provided.

  The substrate S is typically a glass substrate. The length (width) in the x direction of the substrate S transported to the space 19 is smaller than the width of the chamber 1 but larger than the width of each of the chamber blocks 10A and 10B. Therefore, as shown in FIG. 1, the substrate S is disposed in the space 19 so as to penetrate the openings 12Aw and 12Bw.

[Configuration of sputtering cathode]
Next, the configuration of the first and second sputtering cathodes 2A and 2B will be described.

  The first and second sputtering cathodes 2 </ b> A and 2 </ b> B have the same configuration, and include a target unit 21, a magnet unit 22, and a moving unit 23.

  The target unit 21 includes a plurality of target units 31, 32, and 33 and a target base 30. The target base 30 is formed in a frame shape and supports a plurality of target portions 31 to 33. The target portions 31 to 33 have a strip shape having a width direction in the x direction and a length direction in the z direction, and include a sputtering target made of a film forming material and a backing plate. The target portions 31 to 33 are arranged at equal intervals in the x direction. Note that the shape, size, and number of arrays of the target portions are not limited to the above example.

  The magnet unit 22 includes a plurality of magnet parts 41, 42 and 43 and a magnet base 40. The magnet base 40 supports a plurality of magnet parts 41 to 43. The magnet parts 41 to 43 are made of an E-type permanent magnet material having a width direction in the x direction and a length direction in the z direction, and are arranged to face the back side of the target parts 31 to 33. The magnet parts 41 to 43 are arranged at equal intervals in the x direction.

  The moving unit 23 is for moving the magnet unit 22 in the x, y, and z directions with respect to the target unit 21. The moving unit 23 includes a first guide base 231x that guides movement of the magnet unit 22 in the x direction, a second guide base 231z that guides movement of the magnet unit 22 in the z direction, and y of the magnet unit 22. And a third guide base 231y for guiding the movement in the direction.

  Further, the moving unit 23 includes a first drive source 233 that drives the magnet unit 22 in the x direction and the z direction, and a second drive source 234 that drives the magnet unit 22 in the y direction. The first drive source 233 and the second drive source 234 are each attached to the support plate 24. The first drive source 233 has a drive shaft 233a that passes through the first guide base 231x and is connected to the magnet base 40, and moves the magnet unit 22 in the x and z directions via the drive shaft 233a. Let The drive shaft 233a is configured to advance and retract in the y direction as the magnet unit 22 moves in the y direction by the second drive source 234. The second drive source 234 has a drive shaft 234a connected to the third guide base z, and moves the magnet unit 22 in the y direction via the drive shaft 234a.

  The support plate 24 supports the magnet unit 22 via the third guide base 231y, the second guide base 231z, and the first guide base 231x. Further, the support plate 24 supports the target unit 21 via the support member 25. Therefore, the target unit 21, the magnet unit 22, and the moving unit 23 are supported in common by the support plate 24. Note that the support member 25 may also serve as a supply path for power, a cooling medium, and the like to the target units 31 to 33 of the target unit 21.

  The target unit 21, the magnet unit 22, the moving unit 23, and the support plate 24 configured as described above are configured in common for the first and second sputtering cathodes 2A and 2B. The first sputtering cathode 2A is installed in the space 19 through the first opening 11Aw of the chamber 1, and the second sputtering cathode 2B is installed in the space 19 through the opening 11Bw of the chamber 1. The The support plate 24 of the first sputtering cathode 2A is fixed to the back surface 11A of the first chamber block 10A by a plurality of bolt members via a seal member. The support plate 24 of the second sputtering cathode 2B is fixed to the back surface 11B of the second chamber block 10B by a plurality of bolt members via a seal member. Thereby, opening part 11Aw and 11Bw are obstruct | occluded, and the sealing performance of the space part 19 is ensured.

  Next, details of the configuration of the sputtering cathodes 2A and 2B will be described together with the operation of the sputtering cathodes 2A and 2B. Here, the first sputtering cathode 2A will be described, but the second sputtering cathode 2B is also configured in the same manner.

  FIG. 3 is a diagram showing an operation mode of the first sputtering cathode 2A. FIG. 4 is a perspective view of a main part showing a state of attaching / detaching the first sputtering cathode 2 </ b> A to the chamber 1. 3 and 4, the support member 25 that fixes the target unit 21 to the support plate 24 is not shown. The target portion 31 located on the inner side (the rib 18A side) among the plurality of target portions 31 to 33 constituting the target unit 21 has a shaft portion 311 (rotating shaft) extending in the z direction. The shaft portion 311 is configured to be rotatable. The target unit 31 has a normal posture (first posture) indicated by a two-dot chain line in FIG. 3 and a non-normal posture (second posture) indicated by a solid line. The shaft portion 311 of the target portion 31 is engaged with a groove portion 301 formed at the side end portion of the target base 30. The engaged state of the shaft portion 311 with respect to the target base 30 is maintained by a stopper 312 fixed to the target base 30 at positions near both ends of the shaft portion 311.

  In the normal posture, the target unit 31 is in a rotational position where the surface to be sputtered faces the front surface 14A of the chamber block 10A, like the other target units 32 and 33. At the time of sputtering film formation on the substrate S, the target unit 31 takes the normal posture. In the normal posture, a part of the target unit 31 is located inward of the inner side surface opening 12Aw of the chamber block 10A and faces the end edge 18A (rib 18) of the chamber block 10A in the y direction.

  On the other hand, the non-normal posture of the target unit 31 is set to a rotational position where the surface to be sputtered of the target unit 31 faces the outer surface 13A of the chamber block 10A. In this non-normal posture, the target portion 31 is not positioned inward of the inner side surface opening portion 12Aw, and therefore does not face the end edge portion 18A (rib 18) of the chamber block 10A in the y direction. The non-normal posture is converted from the normal posture when the sputtering cathode 2A is attached to and detached from the chamber block 10A (conversion mechanism). Although not shown, the target unit 21 includes a lock mechanism that fixes the normal posture and the non-normal posture of the target unit 31. The conversion of the posture of the target unit 31 may be performed manually by an operator or automatically using a separate drive source.

  The second sputtering cathode 2B has the same configuration as described above. In the second sputtering cathode, the target portion 31 located on the inner side (the rib 18B side) of the plurality of target portions 31 to 33 has a shaft portion 311 that can rotate with respect to the target base 30. (See FIG. 1). When the target portions 31 of the first and second sputtering cathodes 2A and 2B are in the normal posture, the interval between the target portions 31 is set to be equal to the arrangement interval of the target portions 31 to 33. .

  The magnet unit 22 has a normal position (first position) indicated by a two-dot chain line in FIG. 3 and an abnormal position (second position) indicated by a solid line. Conversion of the position of the magnet unit 22 is performed by the moving unit 23.

  In the normal position, the magnet unit 22 is set to a height position at which the magnet portions 41 to 43 face each other with a predetermined distance from the target unit 21. The magnet unit 22 is configured as a magnetic circuit that forms a magnetic field having a predetermined strength from the surface of each of the target units 31 to 33 at a normal position, and generates a magnetron discharge of sputtering gas between the substrate S and the target units 31 to 33. Form. Further, the magnet unit 22 is located on the inner side of the inner side opening 12Aw at the normal position, and faces the end edge 18A (rib 18) of the chamber block 10A in the y direction.

  On the other hand, the non-normal position of the magnet unit 22 is set to a position away from the target unit 21 by a predetermined distance from the normal position to the rear side. The predetermined distance is not particularly limited as long as the magnet unit 22 does not interfere with the target unit 31 when the target unit 31 is rotated from the normal posture to the non-normal posture. In this non-normal position, the magnet unit 22 is not positioned inward of the inner side surface opening 12Aw, and therefore faces the edge 18A (rib 18) of the chamber block 10A in the y direction. Absent. The non-normal position is changed from the normal position when the sputtering cathode 2A is attached to or detached from the chamber block 10A.

[Sputtering cathode attachment / detachment operation]
Next, the attaching / detaching operation of the first and second sputtering cathodes 2A and 2B with respect to the chamber 1 will be described.

  When the first and second sputtering cathodes 2A and 2B are attached to the chamber 1, as shown in FIG. 4, the target portion 31 of each target unit 21 is converted into a non-normal posture, and the magnet unit 22 is in a non-normal position. Moved to. Therefore, the first and second sputtering cathodes 2A and 2B can be mounted in the space 19 without interfering with the ribs 18 located between the two openings 11Aw and 11Bw of the chamber 1. The first and second sputtering cathodes 2A and 2B are installed in the space portion 19 by joining each support plate 24 to the back surfaces 11A and 11B of the chamber using a plurality of bolt members.

  After the first and second sputtering cathodes 2 </ b> A and 2 </ b> B are installed in the space portion 19, the target portion 31 is converted from the non-normal posture to the normal posture by the turning operation around the shaft portion 311. After the target unit 31 is converted to the normal posture, the magnet unit 22 is moved from the non-normal position to the normal position by the moving operation in the x and y directions by the moving unit 23. At this time, an operation of moving the magnet unit 22 in the z direction by the moving unit 23 may be included. Thus, the sputtering cathodes 2A and 2B take the form shown in FIG. Thereby, not only the individual target units 21 of the sputtering cathodes 2A and 2B but all the targets 31 to 33 are arranged at equal intervals along the x direction in all the target units 21.

  Therefore, even when the width of the rib 18 of the chamber 1 is larger than the separation distance between the target portion 31 of the first sputtering cathode 2A and the target portion 31 of the second sputtering cathode 2B, Interference between 31 and the rib 18 can be prevented. Thereby, good mounting workability of the sputtering cathodes 2A and 2B to the chamber 1 is ensured.

  Moreover, according to this embodiment, since each target part 31-33 is arrange | positioned at equal intervals, respectively, the continuity or arrangement | positioning of the target parts 31-33 with respect to the board | substrate S conveyed in the space part 19 is provided. Symmetry is ensured. Accordingly, it is possible to ensure the uniformity of film formation on the entire surface of the substrate S.

  At the time of sputtering film formation, the magnet unit 22 in the normal position may be swung in the x direction by driving the moving unit 23. Thereby, the erosion area | region formed in the surface of the target parts 31-33 can be expanded, the use efficiency of the target parts 31-33 can be improved, and the lifetime improvement of the target parts 31-33 can be achieved. The swing of the magnet unit 22 may be controlled independently for each sputtering cathode 2A, 2B by the moving unit 23, or may be driven synchronously between the sputtering cathodes 2A, 2B.

  On the other hand, at the time of maintenance of the sputtering cathodes 2 </ b> A and 2 </ b> B such as replacement of the target parts 31 to 33, the sputtering cathodes 2 </ b> A and 2 </ b> B are removed from the chamber 1 after adjusting the space 19 of the chamber 1 to atmospheric pressure. In this case, after moving the magnet unit 22 in the normal position to the non-normal position, the target unit 31 is converted from the normal posture to the non-normal posture. Thereby, when removing sputtering cathode 2A, 2B from the chamber 1, interference with the rib 18 of the chamber 1, the magnet unit 22, and the target part 31 is prevented. Therefore, the sputtering cathodes 2A and 2B can be easily removed from the chamber 1.

  As described above, according to the sputtering apparatus of this embodiment, when the first and second sputtering cathodes 2A and 2B are attached and detached, the interference between the target portions 31 of the sputtering cathodes 2A and 2B and the ribs 18 of the chamber 1 occurs. Can be prevented, and good workability can be secured. In addition, since the target portions 31 to 33 of the sputtering cathodes 2A and 2B can be arranged at equal intervals during film formation, good film formation uniformity can be ensured even when the substrate S is a large substrate. Can do.

  In addition, according to the present embodiment, the conversion mechanism for converting the posture of the target unit 31 is realized by the rotation mechanism of the target unit 31 with respect to the target base 30 as described above. Simplification can be achieved.

  Furthermore, according to the present embodiment, since the configuration in which the target unit 21, the magnet unit 22, and the moving unit 23 are commonly supported by the support plate 24 is adopted, the sputtering cathodes 2A and 2B can be unitized, The efficiency of attaching / detaching workability can be improved.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. FIG. 5 is a plan view sectional view showing a schematic configuration of the sputtering apparatus of the present embodiment. In the figure, portions corresponding to those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  The sputtering apparatus 200 of the present embodiment includes a chamber 1 and sputtering cathodes 2A and 2B installed inside the chamber 1. In the sputtering cathodes 2A and 2B of the present embodiment, the posture changing mechanism of the target unit 31 of the target unit 21 is different from that of the first embodiment described above.

  In the present embodiment, the target portion 31 located on the inner side (the rib 18A side) among the plurality of target portions 31 to 33 constituting the target unit 21 has a shaft portion 313 extending in the z direction. . The shaft portion 313 engages with a long hole 303 (guide portion) formed in the side portion of the target base 30 and is configured to be slidable in the x direction. The long hole 303 has a longitudinal direction in the x direction.

  The target unit 31 has a normal position (first posture) indicated by a two-dot chain line and a non-normal position (second posture) indicated by a solid line in FIG. At the normal position, the target unit 31 is adjacent to the target unit 32 with an interval equivalent to the interval between the other target unit 32 and the target unit 33. During sputtering film formation on the substrate S, the target unit 31 takes the normal position. In the normal position, a part of the target portion 31 is located inward of the inner side surface opening portion 12Aw of the chamber block 10A and faces the end edge portion 18A (rib 18) of the chamber block 10A in the y direction.

  On the other hand, the non-normal position of the target unit 31 is set to a position where the target unit 31 is close to the target unit 32 adjacent thereto. In this non-normal position, the target portion 31 is not located inward of the inner side surface opening portion 12Aw, and therefore does not face the end edge portion 18A (rib 18) of the chamber block 10A in the y direction. The non-normal position is converted from the normal position when the sputtering cathode 2A is attached to or detached from the chamber block 10A (conversion mechanism). The position conversion of the target portion 31 between the normal position and the non-normal position is performed by a sliding operation of the shaft portion 313 along the longitudinal direction of the long hole 303. The position conversion of the target unit 31 may be performed manually by an operator or may be performed automatically using a separate drive source. Although not shown, the target unit 21 includes a lock mechanism that fixes the normal position and the non-normal position of the target unit 31.

  The second sputtering cathode 2B has the same configuration as described above. In the second sputtering cathode, the target unit 31 located on the inner side (the rib 18 </ b> B side) of the plurality of target units 31 to 33 has a shaft unit that can slide with respect to the target base 30. When the target portions 31 of the first and second sputtering cathodes 2A and 2B are at the normal position, the distance between the target portions 31 is set to the same size as the arrangement interval between the target portion 32 and the target portion 33. Has been.

  Also in the sputtering apparatus 200 of the present embodiment configured as described above, the same effects as those of the first embodiment described above can be obtained. Thereby, it is possible to ensure good detachability of the sputtering cathodes 2A and 2B with respect to the chamber 1 and good uniformity during sputtering film formation. Moreover, since the conversion mechanism for converting the posture of the target unit 31 is realized by the slide mechanism of the target unit 31 with respect to the target base 30 as described above, the configuration of the conversion mechanism can be simplified.

  The embodiment of the present invention has been described above, but the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.

  For example, in the above embodiment, the case where the chamber 1 has the bonding structure of the first chamber block 10A and the second chamber block 10B has been described as an example. However, the present invention is not limited to this, and the chamber 1 includes a single chamber block. May be. In this case, the present invention is applicable to a chamber structure in which the sputtering cathode mounting opening is divided into a plurality of reinforcing ribs.

  The number of sputtering cathodes mounted in the chamber 1 is not limited to two, and the number of sputtering cathodes mounted can be set in accordance with the number of openings. In this case, the sputtering cathodes are not limited to the horizontal direction, but may be arranged in the vertical direction.

  The moving unit 23 that linearly moves the magnet unit 22 may be configured in common for the sputtering cathodes 2A and 2B. In this case, it is also possible to configure the sputtering cathodes 2A and 2B as a single module by using a common support plate for the sputtering cathodes 2A and 2B.

  In the above embodiment, the in-line type sputtering apparatus has been described as an example. However, the present invention is not limited to this, and the present invention can also be applied to a single wafer type sputtering apparatus. Further, the film forming method is not limited to the vertical type, and the present invention can be applied to a horizontal sputtering apparatus for forming a film in a posture in which the substrate is horizontally laid down.

DESCRIPTION OF SYMBOLS 1 Chamber 2A 1st sputtering cathode 2B 2nd sputtering cathode 10A 1st chamber block 10B 2nd chamber block 11Aw, 11Bw Back surface opening part 18 Rib 18A 1st edge part 18B 2nd edge part 19 Space Part 21 Target unit 22 Magnet unit 23 Moving unit 24 Support plate 31-33 Target part 41-43 Magnet part 100, 200 Sputtering device 303 Long hole 311, 313 Shaft part

Claims (9)

A first side surface including an opening and a rib that divides the opening into a first opening and a second opening, wherein the first and second openings are arranged along a first direction; A polyhedral chamber that forms a space therein, and
A first target portion disposed in the space portion so as to face the rib in a second direction orthogonal to the first side surface; and arranged at a first interval along the first direction. A first target unit that has a plurality of target portions and is detachably installed in the space portion through the first opening,
The first target portion including the second target portion disposed in the space portion with the first interval with respect to the first target portion so as to face the rib in the second direction. A second target unit having a plurality of target portions arranged at first intervals along a direction, and detachably installed in the space portion through the second opening;
The first and second target portions in the second direction have a first state facing the rib and a second state not facing the rib, and the first and second relative to the space portion. And a conversion mechanism for converting each of the first and second target portions from the first state to the second state when the target unit is attached and detached. The sputtering apparatus according to claim 1,
The chamber is
A first chamber block having the first side surface having the first opening and a second side surface having a third opening formed;
The first side surface having the second opening and the third side surface having a fourth opening formed thereon, and the third side surface is joined to the second side surface, A second chamber block that forms an internal space including the third and fourth openings as the space,
The rib is formed between a first end edge formed between the first opening and the second side surface, and between the second opening and the third side surface. A sputtering apparatus having a junction structure with the second edge portion. The sputtering apparatus according to claim 2,
The first target portion faces the first edge portion in the first state,
The said 2nd target part is a sputtering device which opposes a said 2nd edge part in a said 1st state. The sputtering apparatus according to claim 1,
The conversion mechanism has a rotation axis parallel to a third direction orthogonal to the first and second directions, and rotates the first and second target portions around the rotation axis. Sputtering apparatus that converts the first and second target portions from the first state to the second state. The sputtering apparatus according to claim 1,
The conversion mechanism includes a guide unit that slides the first and second target units in the first direction, and the first and second target units are slid by the guide unit, A sputtering apparatus that converts the first and second target portions from the first state to the second state. The sputtering apparatus according to claim 2,
A plurality of magnet portions facing the back side of the first target unit and arranged at a second interval along the first direction are attached to and detached from the space portion through the first opening. A first magnet unit installed freely;
A plurality of magnet portions facing the back side of the second target unit and arranged at a second interval along the first direction, and being attached to and detached from the space portion through the second opening. A second magnet unit installed freely;
A sputtering apparatus further comprising: a moving mechanism for moving the first and second magnet units in the first and second directions. The sputtering apparatus according to claim 6,
The first and second magnet units have a first position located inward of the third or fourth opening in the second direction and an inner side of the third or fourth opening. A second position not located at
The said moving mechanism moves the said 1st and 2nd magnet unit from the said 1st position to the said 2nd position at the time of the attachment or detachment of the said 1st and 2nd magnet unit with respect to the said space part Sputtering apparatus. The sputtering apparatus according to claim 7,
The moving mechanism is
A first moving unit for moving the first magnet unit in the first and second directions;
A sputtering apparatus comprising: a second moving unit that moves the second magnet unit in the first and second directions. The sputtering apparatus according to claim 8,
A first support plate that commonly supports the first target unit, the first magnet unit, and the first moving unit, and is detachably attached to the first opening;
A second support plate that supports the second target unit, the second magnet unit, and the second moving unit in common and is detachably attached to the second opening; Further provided is a sputtering apparatus.

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