JP5305146B2 - Exposure apparatus, exposure method, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To continuously expose a plurality of divided regions on a wafer to light by a plurality of reticles. <P>SOLUTION: A reticle R<SB>11</SB>traveling on a straight line path, a reticle R<SB>21</SB>traveling on a straight line path, a reticle R<SB>12</SB>traveling on a straight line path, and a reticle R<SB>22</SB>traveling on a straight line path are driven successively in a scanning direction (Y-axis direction), and a stage for holding a wafer W is driven in a scanning direction, thus continuously transferring patterns formed in the reticles R<SB>11</SB>, R<SB>21</SB>, R<SB>12</SB>, R<SB>22</SB>to a plurality of divided regions disposed in a scanning direction on a wafer W via a common projection optical system, where the reticles R<SB>11</SB>, R<SB>12</SB>, R<SB>21</SB>, R<SB>22</SB>are moved turningly in a peripheral direction along closed paths L<SB>1</SB>, L<SB>2</SB>including the respective straight line paths extended in a scanning direction, thus shortening time required for transferring the patterns to all divided regions, namely time required for an exposure process, and hence improving throughput. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method, and more particularly to an exposure apparatus and an exposure method used in a lithography process for manufacturing a semiconductor element (such as an integrated circuit) and a liquid crystal display element, and the exposure method. The present invention relates to a device manufacturing method to be used.

  Conventionally, in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements (integrated circuits, etc.), liquid crystal display elements, etc., step-and-repeat projection exposure apparatuses (so-called steppers), step-and- A scanning projection exposure apparatus (a so-called scanning stepper (also called a scanner)) or the like is used.

  In these exposure apparatuses, illumination light is projected onto a wafer (or glass plate or the like) coated with a photosensitive agent (resist) via a reticle (or mask) and a projection optical system, thereby forming on the reticle. The formed pattern (a reduced image thereof) is sequentially transferred to a plurality of shot areas on the wafer.

International Publication No. 2007/100081 Pamphlet JP 2007-27732 A

The present invention has been made under the circumstances described above. From a first viewpoint, a pattern formed on the plurality of masks using a plurality of masks and one common optical system on the object. A scanning exposure type exposure apparatus for transferring, wherein the first mask of the plurality of masks is held and can be moved around along a closed path including a first straight path extending in a scanning direction within a predetermined plane. A first movable body; and a second mask different from the first mask among the plurality of masks is held, and can move around along a closed path including a second linear path extending in the scanning direction. A second moving body; a third moving body that holds the object and is movable at least in the scanning direction; and an optical system that is provided in common to the first moving body and the second moving body. ; said first and second moving body to an orientation of the scanning direction Each other and simultaneously driven is driven the third moving body to the scanning direction, alternately the first and the pattern formed on the second mask wherein the first and second moving body holds each said optical system And a pattern transfer device that continuously transfers to a plurality of partitioned regions arranged in the scanning direction on the object held by the third moving body.

According to this, the first and second moving bodies that respectively hold the mask are alternately driven in one direction in the scanning direction , and at the same time, the third moving body that holds the object is driven in the scanning direction. The pattern formed in the above is continuously transferred to a plurality of partitioned areas arranged in the scanning direction on the object through a common optical system. Here, the first driving body moves around along the path including the first straight path, and the second driving body moves around along the path including the second straight path. Therefore, the patterns formed on the first and second masks can be alternately and continuously transferred onto the object, thereby requiring the time required to transfer the pattern to all the divided areas, that is, the exposure process. Time can be shortened, and as a result, throughput can be improved.

According to a second aspect of the present invention, there is provided a scanning exposure method exposure method for transferring a pattern formed on the plurality of masks onto an object using a plurality of masks and one common optical system, A first moving body capable of revolving along a closed path including a first straight path that holds a first mask of the plurality of masks and extends in a scanning direction within a predetermined plane; and of the plurality of masks A second moving body that holds a second mask different from the first mask and is capable of revolving along a closed path including a second linear path extending in the scanning direction ; and simultaneously driven alternately, alternately drives the third movable body that holds the object in the scanning direction, said first and second moving body is formed in the first and second mask respectively holding pattern to, via the common optical system, before Third moving body is an exposure method for transferring in succession into a plurality of divided areas which are arranged the scanning direction on the object to be held.

According to this, the first and second moving bodies that respectively hold the mask are alternately driven in one direction in the scanning direction , and at the same time, the third moving body that holds the object is driven in the scanning direction. The pattern formed in the above is continuously transferred to a plurality of partitioned areas arranged in the scanning direction on the object through a common optical system. Here, the first driving body moves around along the path including the first straight path, and the second driving body moves around along the path including the second straight path. Therefore, the patterns formed on the first and second masks can be alternately and continuously transferred onto the object, thereby requiring the time required to transfer the pattern to all the divided areas, that is, the exposure process. Time can be shortened, and as a result, throughput can be improved.

  According to a third aspect of the present invention, there is provided a device manufacturing method comprising: a step of forming a pattern on an object using the exposure method of the present invention; and a step of processing the object on which the pattern is formed. It is.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 shows a schematic configuration of an exposure apparatus 100 according to the present embodiment. The exposure apparatus 100 is a step-and-scan projection exposure apparatus (so-called scanning stepper (also called a scanner)).

The exposure apparatus 100 includes reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ (reticle R) that hold first and second illumination systems IOP ₁ , IOP ₂ , reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ , respectively. ₁₂ and reticle stage RST ₁₂ see FIG. 3A, reticle R ₂₂ see FIG. 5A, reticle stage RST ₂₂ not shown), reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST First and second reticle stage drive systems 22 ₁ and 22 ₂ (not shown in FIG. 1, refer to FIG. 2) for driving ₂₂ respectively, and patterns formed on reticles R ₁₁ , R ₁₂ , R ₂₁ , and R ₂₂ are wafers. Projection unit PU for projecting onto W, wafer stage WST for holding wafer W, wafer stage WST Wafer stage drive system 24 for moving (not shown in FIG. 1, see FIG. 2), and a control system of these parts. In the following, the direction in which each reticle and wafer W are relatively scanned for exposure is the Y-axis direction, the direction orthogonal to this in the horizontal plane is the X-axis direction, and the direction orthogonal to the X-axis and Y-axis directions is the Z-axis. The direction is described.

The first and second illumination systems IOP ₁ and IOP ₂ are arranged apart from each other in the X-axis direction. The first and second illumination systems IOP ₁ and IOP ₂ are connected to a light source composed of, for example, an ArF excimer laser (wavelength 193 nm) (or KrF excimer laser (wavelength 248 nm)) and the light source via a light transmission optical system. Including illumination optics. The illumination optical system includes, for example, an illumination uniformizing optical system including an optical integrator, a beam splitter, a reticle blind, and the like (all not shown) as disclosed in, for example, US Patent Application Publication No. 2003/0025890. Using these, the laser beam emitted from the light source is shaped. The shaped laser beam, as illumination light _IL 1, IL _2, with substantially uniform illuminance in the illumination area _IAR 1, IAR ₂ slit extending elongated in (the left-to-right direction in FIG. 1) X-axis direction on the reticle Irradiate. In FIG. 1, illumination lights IL ₁ and IL ₂ emitted from the first and second illumination systems IOP ₁ and IOP ₂ irradiate the illumination areas IAR ₁ and IAR ₂ on the reticles R ₁₁ and R ₂₁ , respectively. Has been. The illumination areas IAR ₁ and IAR ₂ (that is, the optical axes AX ₁ and AX ₂ ) have different positions in the Y-axis direction as shown in FIGS. 5A and 5B, for example. The illumination area IAR ₁ (optical axis AX ₁ ) is arranged on the + Y side and the illumination area IAR ₂ (optical axis AX ₂ ) is arranged on the −Y side with respect to the central axis AX of the optical system PL.

Reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST ₂₂ are arranged below first and second illumination systems IOP ₁ , IOP ₂ , respectively. In FIG. 1, reticle stages RST ₁₂ and RST ₂₂ are omitted. Here, reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST ₂₂ constitute first and second stage groups, respectively. A reticle R _ij on which a pattern is formed is placed on each reticle stage RST _ij . Reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST ₂₂ included in the first and second stage groups are configured to be drivable by first and second reticle stage drive systems 22 ₁ , 22 ₂ described later, respectively. ing.

In FIGS. 3 (A) and 3 (B) is a first configuration example of the first reticle drive system 22 ₁ is shown. FIG. 3 (A), a plan view of the first reticle drive system 22 ₁ is shown, in FIG. 3 (B), B-B ' line cross-sectional view in FIG. 3 (A) is partially omitted It is shown. Reticle stage _RST 11, _{RST 12} via an air bearing or the like, a reticle stage base (hereinafter, shortly referred to as platen) being supported on _{R B.} Reticles R ₁₁ and R ₁₂ are mounted on reticle stages RST ₁₁ and RST ₁₂ , respectively. In FIG. 1, the surface plate R _B are not shown.

In the area _{A C} of the platen _{R B} shown in FIG. 3 (A), as shown in FIG. 3 (B), the stator _{R C} is embedded inside. The stator R _C is composed of an armature unit (coil unit) including a plurality of armature coils arranged in a predetermined positional relation inside the platen R _B. The plurality of armature coils are covered with a flat plate member made of a non-magnetic material. Plate member constitutes the upper surface of the platen _{R B,} this upper surface is a moving surface of the reticle stage _RST 11, _{RST 12.} On the other hand, the bottom of the reticle stage _RST 11 _{(RST 12),} the movable element _{R M} consisting of the magnet unit including a plurality of permanent magnets is provided opposite to the platen _{R B.}

The surface plate _R stator _{R C} and the reticle stage _RST 11 provided in the _B, the movable element provided on the _{RST 12 R M,} moving-magnet planar motor is configured. The planar motor, the reticle stage _RST 11, _{RST 12} along the elliptically path _{L 1} shown in FIG. 3 (A), the driven the upper platen _{R B.}

In FIGS. 4 (A) and FIG. 4 (B), a second configuration example of the first reticle drive system 22 ₁ is shown. FIG. 4 (A), a plan view of the first reticle drive system 22 ₁ is shown, in FIG. 4 (B), B-B ' line cross-sectional view in FIG. 4 (A) is partially omitted It is shown. As shown in FIG. 4B, the reticle stages RST ₁₁ and RST ₁₂ hold the reticles R ₁₁ and R ₁₂ in openings (not shown) formed in the central portion via a holding mechanism (not shown), respectively. doing.

In the second configuration example, on vibration isolation system (not shown), plate R _CM is supported via an air bearing or the like. Plate R _CM is a two platen (upper platen and lower platen) superposed in parallel at regular distance in the Z axis direction, and is configured by fixing their periphery. The reticle stages RST ₁₁ and RST ₁₂ are driven between the upper and lower surface plates of the surface plate R _CM . In this case, the platen _{R CM} is the reaction force caused by the driving of the reticle stage _RST 11, _{RST 12,} moves in the opposite direction to the reticle stage _RST 11, _{RST 12,} the role of the counter mass to absorb the reaction force Fulfill.

In the region A _C portion of the platen R _CM shown in FIG. 4 (A), as shown in FIG. 4 (B), the surface facing the upper surface plate and lower surface plate constituting the surface plate R _CM, Each of the stators _RC is embedded. And respectively opposite the stator _{R C} provided in the upper platen and the lower platen, the top and bottom surfaces of the reticle stage _RST 11 _{(RST 12),} the movable element _{R M,} respectively.

Opposite the stator _{R C} and stator _{R C} provided in the upper platen becomes mover _{R M} Togagumi provided on the reticle stage _RST 11, _{RST 12,} the stator R provided on the lower platen opposite the _C and stator _{R C} becomes mover _{R M} Togagumi provided on the reticle stage _RST 11, _{RST 12,} respectively constituting the planar motor, from the upper and lower planar motor, magnetic levitation The planar motor device is configured. The planar motor apparatus, the reticle stage _RST 11, _{RST 12} along the FIG 4 (A) elliptically path _{L 1} shown in the drive between the upper platen and the lower platen of the platen _{R CM} Is done.

₂ second reticle drive system 22 that drives the reticle stage _RST 21, _{RST 22} can also be configured similarly to ₁ and the first reticle drive system 22. Details of driving the reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ will be described later.

The positions of reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST _{22 in} the XY plane are measured by first and second reticle interferometers 14 ₁ , 14 ₂ , respectively. Here, at the end of each reticle stage RST _ij , as shown in FIG. 1, a movable mirror 12 (actually a Y movable mirror (or a retroreflector) having a reflecting surface orthogonal to the Y axis, and an X axis) X moving mirror having a reflecting surface orthogonal to the X axis. First and second reticle interferometer ₁₄ 1, 14 ₂ irradiates a laser beam (measurement beam) onto the movement mirror 12, by receiving the reflected light from the movable mirror 12, respectively, the reticle stage _{RST 11,} The positions of RST ₁₂ and RST ₂₁ and RST ₂₂ are measured. The measurement results of the first and second reticle interferometers 14 ₁ and 14 ₂ are supplied to the main controller 20 (see FIG. 2). Main controller 20 drives and controls reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST ₂₂ via first and second reticle stage drive systems 22 ₁ , 22 ₂ , respectively, according to the supplied measurement results.

Above each of the reticle stages RST ₁₁ and RST ₂₁ , first and second reticle alignment detection systems 13 ₁ and 13 ₂ as disclosed in, for example, US Pat. No. 5,646,413 (FIG. 2). Reference) is provided. The first and second reticle alignment detection systems 13 ₁ and 13 ₂ are each composed of a TTR (Through The Reticle) alignment system using light having the same wavelength as the illumination lights IL ₁ and IL ₂ . First and second reticle alignment detection system ₁₃ 1, 13 ₂ of the detection signal is supplied to main controller 20 (see FIG. 2).

As shown in FIG. 1, the projection unit PU is disposed below the reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ . Projection unit PU includes a barrel 40, a first partial optical system PL ₀ disposed therein and a second partial optical system PL. Here, the first partial optical system PL ₀ includes optical elements that transmit the illumination lights IL ₁ and IL ₂ along the optical axes AX ₁ and AX ₂ to the second partial optical system PL. The second partial optical system PL is composed of a plurality of optical elements including a mirror and a lens. By the first partial optical system PL ₀ and the second partial optical system PL, erect images of the patterns in the illumination areas IAR ₁ and IAR ₂ that are illuminated by the illumination lights IL ₁ and IL ₂ , respectively, are displayed on the second partial optical system PL. A projection optical system including a catadioptric system and a reduction system formed on the image plane is configured. Hereinafter, this projection optical system will be described as a projection optical system PL for convenience, and its central axis will be described as a central axis AX. As described above, the illumination area IAR ₁ is disposed on the + Y side with respect to the central axis AX of the projection optical system PL, and the illumination area IAR ₂ is disposed on the −Y side with respect to the central axis AX of the projection optical system PL. In the projection optical system PL, the optical axis AX ₁ is arranged on the + Y side with respect to the central axis AX of the projection optical system PL, and the optical axis AX ₂ is −Y with respect to the central axis AX of the projection optical system PL. (In FIG. 1, the central axis AX, the optical axes AX ₁ , and AX ₂ are arranged so as to overlap in the depth direction of the paper (Y-axis direction)).

The projection magnification of the projection optical system PL is, for example, 1/5 (or 1/4). Therefore, when the reticle is illuminated with uniform illumination by the illumination light IL ₁ or IL ₂ as described above, the pattern of the reticle in the illumination areas IAR ₁ and IAR ₂ is reduced by the projection optical system PL and resist (photosensitive). (Agent) is projected onto the coated wafer W. Then, the pattern is transferred to the exposure areas IA ₁ and IA ₂ (part of the shot area) on the wafer W (a latent image of the pattern (reduced erect image) is formed on the resist). As described above, since the optical axes AX ₁ and AX ₂ are arranged on the + Y side and the −Y side with respect to the central axis AX, the exposure areas IA ₁ and IA ₂ on the wafer W are, for example, FIG. As shown in FIG. 5A and FIG. 5B, they are separated with respect to the Y-axis direction. The exposure area IA ₁ is located on the + Y side, and the exposure area IA ₂ is located on the −Y side.

  Wafer stage WST is arranged below projection unit PU. Wafer W is held by vacuum suction or the like on a wafer holder (not shown) installed on wafer stage WST.

  Wafer stage WST is driven with a predetermined stroke in the X-axis direction and Y-axis direction by wafer stage drive system 24 including a linear motor and the like, and also rotates in the Z-axis direction and the X-axis rotation direction (θx direction), Y-axis. It is finely driven in the rotation direction (θy direction) around and the rotation direction around the Z axis (θz direction). Instead of wafer stage WST, a first stage that moves in the X-axis direction, Y-axis direction, and θz direction, and a second stage that finely moves in the Z-axis direction, θx direction, and θy direction on the first stage, A stage provided may be used.

  Wafer stage WST position in the XY plane (including yawing (rotation θz in θz direction)) and tilt with respect to the Z axis (pitching (rotation θx in θx direction) and rolling (rotation θy in θy direction)) are wafer interference. It is measured using a total 18. Here, on the upper surface of wafer stage WST, moving mirror 16 (actually, a Y moving mirror having a reflecting surface orthogonal to the Y axis and an X moving mirror having a reflecting surface orthogonal to the X axis) is provided. . Wafer interferometer 18 measures the position of wafer stage WST by projecting a laser beam (length measuring beam) onto movable mirror 16 and receiving reflected light from movable mirror 16. The measurement result is supplied to the main controller 20 (see FIG. 2). Main controller 20 drives and controls wafer stage WST via wafer stage drive system 24 in accordance with the supplied measurement result.

  A focus sensor AFS (see FIG. 2) that measures the position of the surface of the wafer W in the Z-axis direction and the inclination with respect to the XY plane is disposed near the lower end of the projection optical system PL. As the focus sensor AFS, for example, an oblique incidence type multipoint focal position detection system disclosed in US Pat. No. 5,448,332 is adopted. The multipoint focal position detection system includes an irradiation optical system that emits an imaging light beam obliquely with respect to the Z axis (center axis AX) toward the best imaging plane of the projection optical system PL, and reflection from the surface of the wafer W. And a light receiving optical system for receiving the light beam through the slit. The measurement result of the focus sensor AFS is supplied to the main controller 20 (see FIG. 2). Main controller 20 drives wafer stage WST in the Z-axis direction and the tilt direction via wafer stage drive system 24 in accordance with the measurement result, and performs focus / leveling control of wafer W.

  A reference plate FP is fixed on wafer stage WST. Here, the height of the surface of the reference plate FP is substantially equal to that of the wafer W placed on a wafer holder (not shown). A reference mark for baseline measurement, a reference mark for reticle alignment, and the like are formed on the surface of the reference plate FP.

  An alignment detection system for detecting an alignment mark (wafer mark) attached to each shot area on the wafer W and a reference mark provided on the reference plate FP is provided on the side surface of the projection unit PU on the −Y side of the lens barrel 40. AS (see FIG. 2) is provided. As the alignment detection system AS, for example, an image processing type FIA (Field Image Alignment) system is used. Here, for example, the FIA system irradiates a mark with broadband light such as a halogen lamp, receives light reflected from the mark, and images the mark. Then, the position of the mark is measured by performing image processing on the imaging result. The detection result of the alignment detection system AS is supplied to the main controller 20 via an alignment signal processing system (not shown).

  FIG. 2 shows the main configuration of the control system of the exposure apparatus 100. The control system is mainly configured of a main controller 20 including a microcomputer (or workstation) that performs overall control of the entire apparatus.

The continuous exposure of the wafer by synchronous driving of the reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ and the wafer stage WST in the exposure apparatus 100 of the present embodiment will be described. Patterns A, B, C, and D are formed on reticles R ₁₁ , R ₁₂ , R ₂₁ , and R ₂₂ held on reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , and RST ₂₂ , respectively. The patterns A, B, C, and D may be the same or different.

5A and 5B schematically show the movement paths of four reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ and wafer stage WST. 5A and 5B, reticles R ₁₁ , R ₁₂ , R mounted on reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ are shown in FIGS. 5 (A) and 5 (B). ₂₁ , R ₂₂ (patterns A, B, C, D formed on) and wafer W (on the plurality of partitioned areas arranged on wafer stage WST mounted on wafer stage WST) Only). For convenience of explanation, the size of the partition area of the wafer W is displayed larger than the actual size.

As described above, the wafer in the projection optical system PL, since the optical axis _AX 1, AX ₂ of the illumination light _IL 1, IL ₂ are spaced apart in the Y-axis direction, the illumination light _IL 1, IL ₂ are respectively irradiated The exposure areas IA ₁ and IA ₂ on W are also separated in the Y-axis direction.

Reticles R ₁₁ , R ₁₂ (reticle stages RST ₁₁ , RST ₁₂ ) are in a round shape (more specifically, a shape similar to the contour of a figure in which semicircles are connected to both ends of a rectangle in the longitudinal direction). ₁ is rotated clockwise or counterclockwise, and reciprocally moves along a straight path parallel to the Y axis during the circular movement. Reticles R ₂₁ and R ₂₂ (reticle stages RST ₂₁ and RST ₂₂ ) move clockwise or counterclockwise on an elongated circular path L ₂ , and follow a linear path parallel to the Y axis during the circular movement. Move back and forth. Here, the following description will be made with the common points used for the reticles R ₁₁ , R ₁₂ , R ₂₁ , and R _{22 in} the + Y direction scan (plus scan) and the −Y direction scan (minus scan) as endpoints. Therefore, in FIGS. 5A and 5B, the movement locus of the center point (reticle center) of the pattern region in the constant velocity section of the reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ on the straight path is shown. The points at both ends are shown using points P ₁₁ , P ₁₂ , P ₂₁ , P ₂₂ . Therefore, the position of the reticle in the following description means the position of the center point of the pattern area of the reticle unless otherwise specified.

In the plus scan, the reticle R ₁₁ and the reticle R ₁₂ move at a constant speed in the + Y direction from the point P ₁₁ to the point P ₁₂ as represented by a black arrow in FIG. scan when, as represented with a black arrow in FIG. 5 (B), the from point P ₁₂ to the point P _11, moves at a speed in the -Y direction. That is, the reticle R ₁₁ and the reticle R ₁₂ move at a constant speed in the + Y direction or the −Y direction between the points P ₁₁ and P ₁₂ (referred to as the first constant speed section or simply the constant speed section) on the straight path. .

Similarly, the reticle R ₂₁ and the reticle R ₂₂ move at a constant speed in the + Y direction from the point P ₂₁ to the point P ₂₂ as indicated by a black arrow in FIG. , during negative scan, as represented by using the black arrow in FIG. 5 (B), the from point P ₂₂ to the point P _21, moves at a speed in the -Y direction. That is, the reticle R ₂₁ and the reticle R ₂₂ move at a constant speed in the + Y direction or the −Y direction between the points P ₂₁ and P ₂₂ on the straight path (referred to as a second constant speed section or simply a constant speed section). .

Reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , and RST ₂₂ circulate along paths L ₁ and L ₂ after passing through the above-mentioned constant speed section, and again move at a constant speed in the constant speed section as above. To do. Further, after repeating the same circular movement an arbitrary number of times, the circular direction is reversed and the same circular movement is repeated an arbitrary number of times.

On the other hand, wafer stage WST moves at a constant speed between points P ₁ and P ₂ (constant velocity section) on linear path L _W parallel to the Y axis. In FIGS. 5A and 5B, the constant velocity section is represented as a movement path of the partitioned area on the wafer W to be exposed. The distance of the constant velocity section of wafer stage WST is, for example, N × M times the length of the partition area in the Y-axis direction according to the number N of reticle stages (reticles) to be used and the number of rotations M (further, between the partition areas). N × M−1 times the separation distance is added).

6A to 6F, reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ (reticle R ₁₁ , reticle) in continuous exposure, which are executed by main controller 20 in accordance with a predetermined algorithm. The details of the synchronous driving of R ₁₂ , R ₂₁ , R ₂₂ ) and wafer stage WST (wafer W), that is, the temporal changes in their positional relationship during continuous exposure are schematically shown. The notation in the figure is the same as the notation in FIG. 5 (A) and FIG. 5 (B). Hereinafter, the states illustrated in FIGS. 6A to 6F are also referred to as states A to F, respectively.

FIG. 6A shows a state (state A) immediately after the start of continuous exposure. In the state A, the reticle stage RST ₁₁ (reticle R ₁₁ ) moves around the path L ₁ counterclockwise on the paper surface, and the center of the pattern area of the reticle R ₁₁ is the one end point P ₁₁ of the first constant velocity section. Is reached from the -Y side. At this time, reticle stage RST ₁₂ (reticle R ₁₂ ) is retracted out of the constant velocity section on path L ₁ .

When the center of the pattern area of reticle R ₁₁ reaches one end point P ₁₁ of the first constant speed section, reticle stage RST ₁₁ starts moving at a constant speed while keeping the speed constant. At the same time, the wafer stage WST, a first central compartment area S ₁ on the wafer W reaches the end point P ₁ of the constant speed section to initiate a constant speed movement while maintaining its speed constant. Thereby, as shown in FIG. 6B, the reticle R ₁₁ passes through the illumination area IAR ₁ . Therefore, the pattern area of the reticle _{R 11} is illuminated by the illumination light IL _1. At the same time, the first partition area S ₁ on the wafer W passes through the exposure area IA ₁ . Therefore, the illumination light IL _1, the pattern A of the reticle _{R 11} is projected to the first divided region _{S 1,} pattern A is transferred to the first divided region _{S 1.} In FIGS. 6B to 6F, the black illumination areas IAR ₁ and IAR ₂ and the exposure areas IA ₁ and IA ₂ mean that the illumination lights IL ₁ and IL ₁ are projected. To do.

On the other hand, in parallel with the revolving movement of reticle stage RST ₁₁ (reticle R ₁₁ ), reticle stage RST ₂₁ (reticle R ₂₁ ) revolves clockwise on the paper surface along path L ₂ . In the state B shown in FIG. 6 (B), the chickle R ₂₁ is moving toward the one end point P ₂₁ of the second constant velocity section. When the center of the pattern area of reticle R ₂₁ reaches point P ₂₁ , reticle stage RST ₂₁ starts moving at a constant speed while keeping the speed constant. At this time, the speed of reticle stage RST ₂₁ (reticle R ₂₁ ) is equal to that of reticle stage RST ₁₁ (reticle R ₁₁ ). In addition, as shown in FIG. 6C, reticle stage RST ₂₁ (reticle R ₂₁ ) follows reticle stage RST ₁₁ (reticle R ₁₁ ) at a constant interval in the Y-axis direction. Note that the fixed interval corresponds to the arrangement interval of the partitioned regions arranged on the wafer W and adjacent to each other in the Y-axis direction.

At this time, reticle stage RST ₂₂ (reticle R ₂₂ ) is retracted outside the constant velocity section on path L ₂ . Wafer stage WST (wafer W) continues to move at a constant speed in a constant speed section.

As the reticle stage RST ₂₁ (reticle R ₂₁ ) moves following the reticle stage RST ₁₁ (reticle R ₁₁ ), as shown in FIG. 6C, before the reticle R ₁₁ finishes passing through the illumination area IAR _1. , Reticle R ₂₁ begins to pass through illumination area IAR ₂ . For this reason, the pattern area of the reticle R ₁₁ is illuminated by the illumination light IL ₁ and at the same time, the pattern area of the reticle R ₂₁ is illuminated by the illumination light IL ₂ . Further, before the first divided region _{S 1} on the wafer W passing completely through the exposure area IA _1, the second partition region _{S 2} starts to pass through the exposure area IA _2. Therefore, simultaneously with the pattern A of the reticle _{R 11} is projected to the first divided region _{S 1} by the illumination light IL _1, the pattern B of the reticle _{R 21} is projected to the second partition region _{S 2} by the illumination light IL _2. That is, the pattern B of the reticle R ₂₁ is transferred to the second partition region S _{2 in} parallel with the transfer of the pattern A of the reticle R ₁₁ to the first partition region S ₁ .

As described above, in the exposure apparatus 100 of the present embodiment, since the optical axes AX ₁ and AX ₂ are separated from each other in the Y-axis direction, the exposure area IA while the wafer stage WST passes through one section on the movement path. ₁ and IA ₂ simultaneously overlap _two partitioned areas S ₁ and S ₂ adjacent to each other on the wafer W in the Y-axis direction. Therefore, by following the reticle stages RST ₁₁ and RST ₂₁ (reticles R ₁₁ and R ₂₁ ) as described above, the patterns A and B of the reticles R ₁₁ and R ₂₁ are simultaneously 2 over a fixed time. Transferred to the _two partitioned areas S ₁ and S ₂ . Note that the fixed time is equal to the separation distance of the optical axes AX ₁ and AX _{2 in} the Y-axis direction / the movement speed of wafer stage WST.

As shown in FIG. 6 (D), the center of the pattern area of the reticle _{R 11} reaches the end point _{P 12} of the first constant velocity section, the pattern area of the reticle _{R 11} passing completely through the illumination area IAR _1. At the same time, the first partition area S ₁ of the wafer W has finished passing through the exposure area IA ₁ . Thereby, the transfer of the pattern A of the reticle R ₁₁ to the first partition region S ₁ is completed. Thereafter, reticle stage RST ₁₁ (reticle R ₁₁ ) orbits along path L ₁ and retreats from the first constant velocity section until the next follow-up movement.

As shown in FIG. 6D, the center of the pattern area of reticle R ₂₁ also reaches one end point P ₂₂ of the second constant velocity section, and the pattern area of reticle R ₂₁ finishes passing through illumination area IAR _2. . At the same time, the second partition region _{S 2} of the wafer W is also passing completely through the exposure area IA _2. Thereby, the transfer of the pattern B of the reticle R ₂₁ to the second partition region S ₂ is completed. Thereafter, reticle stage RST ₂₁ (reticle R ₂₁ ) circulates on path L ₂ and retreats from the second constant velocity section until the next follow-up movement.

Following the constant speed driving of the reticle stages RST ₁₁ and RST ₂₁ (reticles R ₁₁ and R ₂₁ ), the constant speed driving of the reticle stages RST ₁₂ and RST ₂₂ (reticles R ₁₂ and R ₂₂ ) is started. As a result, the patterns C and D of the reticles R ₁₂ and R ₂₂ are transferred to the third and fourth partition regions S ₃ and S ₄ on the wafer W, respectively.

As shown in FIG. 6D, when the reticle stage RST ₁₁ (reticle R ₁₁ ) is retracted from the first constant velocity section, the reticle R ₁₂ has the center of the pattern area at one end point P ₁₁ of the first constant velocity section. The constant speed movement is started while keeping the speed constant. At this time, the speed of reticle stage RST ₁₂ (reticle R ₁₂ ) is equal to that of reticle stage RST ₂₁ (reticle R ₂₁ ). Here, reticle stage RST ₂₁ (reticle R ₂₁ ) precedes in the + Y direction, and reticle stage RST ₁₂ (reticle R ₁₂ ) follows the reticle stage RST ₂₁ (reticle R ₂₁ ). At this time, wafer stage WST (wafer W) continues to move at a constant speed in a constant speed section.

Here, as described above, the illumination area IAR ₁ is separated from the + Y side, and the illumination area IAR ₂ is separated from the −Y side. For this reason, in the state D shown in FIG. 6D, the pattern areas of the reticles R ₁₂ and R ₂₁ are not illuminated by the illumination lights IL ₁ and IL ₂ , and the pattern transfer is interrupted.

When reticle stage RST ₁₂ (reticle R ₁₂ ) starts moving at a constant speed, reticle R ₁₂ passes through illumination area IAR ₁ . Thus, the pattern area of the reticle _{R 12} is illuminated by the illumination light IL _1. At the same time, a third section area _{S 3} of the wafer W passes through the exposure area IA _1. Thereby, the illumination light IL _1, the pattern C of the reticle _{R 12} is projected into the third compartment area _{S 3,} the pattern C is transferred to the third section area _{S 3.}

On the other hand, as shown in FIG. 6E, when the reticle stage RST ₂₁ (reticle R ₂₁ ) is retracted from the second constant velocity section, the reticle R ₂₂ has the center of the pattern area at one end point of the second constant velocity section. reached P _21, it starts the constant speed movement while maintaining its speed constant. At this time, the speed of reticle stage RST ₂₂ (reticle R ₂₂ ) is equal to that of reticle stage RST ₁₂ (reticle R ₁₂ ). Here, reticle stage RST ₁₂ (reticle R ₁₂ ) is advanced in the + Y direction, and reticle stage RST ₂₂ (reticle R ₂₂ ) follows the reticle stage RST ₁₂ (reticle R ₁₂ ).

By following movement of reticle stage RST ₂₂ (reticle R ₂₂ ) to reticle stage RST ₁₂ (reticle R ₁₂ ), as shown in FIG. 6 (F), to the third partition region S ₃ of pattern C of reticle R ₁₂ . In parallel with this transfer, the pattern D of the reticle R ₂₂ is transferred to the fourth partition region S ₄ .

Center of the pattern area of the reticle _{R 12} reaches the end point _{P 12} of the first constant velocity section, the pattern area of the reticle _{R 12} passing completely through the illumination area IAR _1. At the same time, a third section area _{S 3} of the wafer W passing completely through the exposure area IA _1. Thus, transfer to third section area _{S 3} of the pattern C of the reticle _{R 12} is completed. Thereafter, reticle stage RST ₁₂ (reticle R ₁₂ ) orbits along path L ₁ and retreats from the first constant velocity section until the next follow-up movement.

The center of the pattern area of reticle R ₂₂ also reaches one end point P ₂₂ of the second constant velocity section, and the pattern area of reticle R ₂₂ finishes passing through illumination area IAR ₂ . At the same time, the fourth partition area _{S 4} of the wafer W is also passing completely through the exposure area IA _2. Thereby, the transfer of the pattern B of the reticle R ₂₁ to the second partition region S ₂ is completed. Thereafter, reticle stage RST ₂₂ (reticle R ₂₂ ) orbits along path L ₂ and retreats from the second constant velocity section until the next follow-up movement.

As described above, in synchronization with the driving of wafer stage WST in the + Y direction, reticle stages RST ₁₁ and RST ₁₂ constituting the first stage set and reticle stages RST ₂₁ and RST ₂₂ constituting the second stage set are set. Drive alternately. The illumination light IL ₁ and the illumination light IL ₂ through the reticles R ₁₁ and R ₁₂ and the illumination light IL ₂ through the reticles R ₂₁ and R ₂₂ are alternately and continuously arranged in the Y-axis direction on the wafer W. Projecting to the partition areas S ₁ , S ₂ , S ₃ , S ₄ . As a result, the patterns A, B, C, and D of the reticles R ₁₁ , R ₂₁ , R ₁₂ , and R ₂₂ are continuously transferred to the partitioned areas S ₁ , S ₂ , S ₃ , and S ₄ , respectively.

Further, the driving directions of reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , and RST ₂₂ are reversed, and they are driven to rotate in the opposite direction. At the same time, wafer stage WST (wafer W) is moved stepwise in the non-scanning direction (+ X direction), and is driven at a constant speed by reversing the driving direction in the -Y direction. Here, the distance of the step movement is equal to the arrangement interval of the partition areas adjacent on the non-scanning direction (X-axis direction) arranged on the wafer W. As a result, in the same manner as in the previous continuous exposure, but in the reverse order, the reticles R ₁₁ , R ₂₁ , R are placed in the partitioned areas adjacent to the partitioned areas S ₁ , S ₂ , S ₃ , S ₄ on the wafer W in the X axis direction. ₁₂ and R ₂₂ patterns A, B, C, and D are continuously transferred.

  By repeating the above-described continuous exposure, the patterns A, B, C, and D are transferred to a plurality of partitioned regions arranged on the wafer W, as shown in FIG. That is, as the wafer W is moved stepwise in the X-axis direction, the four partitioned areas arranged in the Y-axis direction on the wafer W are to be exposed in the order represented by the white arrows, and in the order represented by the black arrows. Patterns A, B, C, and D are transferred to the four partitioned areas.

  In the conventional scanning exposure using only one reticle, a pattern is transferred to only one partitioned area every step movement. Further, it is necessary to accelerate / decelerate the wafer stage for each transfer of one partitioned area. On the other hand, in the present embodiment, the number of step movements in transferring the pattern to all the partitioned areas can be reduced by continuous exposure. Further, the number of times of acceleration / deceleration of the wafer stage can be reduced, and the acceleration / deceleration time not contributing to exposure can be shortened as a whole. As a result, the time required for the exposure process can be shortened, that is, the throughput can be improved.

Here, in the continuous exposure according to the present embodiment, the reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , and RST ₂₂ are driven only once in one direction. Patterns A, B, C, and D are transferred to a plurality of partitioned areas adjacent in the axial direction. For example, in the case of repeating twice, as shown in FIG. 7B, when the wafer W is moved stepwise in the X-axis direction, eight pieces arranged in the Y-axis direction on the wafer W in the order represented by the white arrows are used. The partitioned areas are to be exposed, and the reticles R ₁₁ , R ₂₁ , R ₁₂ , R ₂₂ patterns A, B, C, and D are transferred to the eight partitioned areas in the order indicated by the black arrows.

Further, the circular drive of reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ is not limited to an integral number of circular drives. That is, even when the number of partition areas arranged in the Y-axis direction on the wafer W is different for each column, or even when the number of partition areas arranged in the Y-axis direction is not an integral multiple of the number of reticle stages, the exposure according to this embodiment is performed. Continuous exposure using the apparatus 100 is possible. In this case, after the exposure of a predetermined number of partitioned areas arranged in the Y-axis direction on the wafer W is completed, the driving direction may be reversed and the exposure processing of the adjacent partitioned areas may be started even if the circulation is in progress.

Further, the above-described continuous exposure can be performed using only a part of the plurality of reticle stages. For example, when only the reticle stages RST ₁₁ and RST ₂₁ are used, as shown in FIG. 7C, the wafer W moves stepwise in the X-axis direction, so that the wafer W is moved in the order indicated by the white arrows. The two partitioned areas arranged in the Y-axis direction are to be exposed, and the patterns A and B of the reticles R ₁₁ and R ₂₁ are transferred to the two partitioned areas in the order indicated by the black arrows.

In the exposure apparatus 100 of the present embodiment, four reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , and RST ₂₂ are mounted, and a continuous exposure is performed using them. The number is not limited to four, and may be other numbers (two or more). For example, as shown in FIG. 8, six reticle stages RST ₁₁ , RST ₁₂ , RST ₁₃ , RST ₂₁ , RST ₂₂ , RST ₂₃ are mounted, and the first stage set from the three stages RST ₁₁ , RST ₁₂ , RST ₁₃ is mounted. And the second stage set may be configured from the three stages RST ₂₁ , RST ₂₂ , and RST ₂₃ . The notation in FIG. 8 is the same as that in FIG. By increasing the number of reticle stages to be used, it is possible to perform more continuous exposure stably and efficiently. The number of reticle stages is not limited to an even number, and may be an odd number. However, the distance between the first and second constant velocity sections does not depend on the number of reticle stages used, and is equal to those distances in the previous example. On the other hand, the distance of the constant velocity section of wafer stage WST is determined according to the number of reticle stages to be used and the number of laps M as described above, and is about 1.5 times that in the previous example (see FIG. 5). ).

In the exposure apparatus 100 of this embodiment, prior to exposure, a wafer W provided with a photosensitive layer (resist) by a coater / developer (not shown) provided in the exposure apparatus 100 is used as a wafer holder (not shown) of the wafer stage WST. ) Is placed on top. Main controller 20 detects an alignment mark (attached to a sample shot area on wafer W) provided on the surface of wafer W using alignment detection system AS, and performs alignment measurement (EGA). Thereby, the position of the shot area on the wafer W in the XY plane (further, the magnification in the scanning direction, θz rotation, and orthogonality) is determined. Details of alignment measurement (EGA) are disclosed in, for example, US Pat. No. 6,876,946. Main controller 20 determines the projection position of the pattern of reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ (projection center of projection optical system PL) and each shot area on wafer W according to the result of alignment measurement (EGA). The relative positional relationship is calculated. According to the result, the pattern of reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ is sequentially exposed in the entire shot area on the wafer W by the above-described continuous exposure.

As described above in detail, in the exposure apparatus 100 of the present embodiment, the reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ holding the reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ are moved in the scanning direction ( The pattern formed on the reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ by driving the wafer stage WST holding the wafer W in the scanning direction (Y-axis direction) at the same time as driving alternately in the Y-axis direction). Can be continuously transferred to a plurality of partitioned regions arranged in the scanning direction on the wafer W via the common projection optical system PL. Here, reticle stages RST ₁₁ , RST ₁₂ and RST ₂₁ , RST ₂₂ move around along closed paths L ₁ , L ₂ including a linear path extending in the scanning direction (Y-axis direction), respectively. As a result, in transferring the pattern to all of the partition areas arranged on the wafer, no matter how many the partition areas are arranged in the scanning direction, all of the sections in one row can be obtained without stepping the wafer stage in the middle. The pattern can be transferred to the area. Further, it is possible to transfer the pattern to each partition area without performing acceleration / deceleration of the wafer stage every time the pattern is transferred to one partition area. That is, the number of step movements can be reduced and the number of acceleration / decelerations can be reduced. As a result, the time required for the exposure process can be shortened, that is, the throughput can be improved.

As described above, in the exposure apparatus 100 of the present embodiment, the second partitioned area S ₂ of the pattern B of the reticle R ₂ is concurrently transferred to the transfer of the pattern A of the reticle R ₁ to the first partitioned area S ₁ . Transfer to is performed. In the above embodiment, as shown in FIG. 6 (C), immediately before the transfer of the pattern A to the first divided region S ₁ is completed, the transfer of the pattern B of the second partition region S ₂ is started However, by increasing the distance between the exposure area IA ₁ (optical axis AX ₁ ) and the exposure area IA ₂ (optical axis AX ₂ ) on the wafer in the Y-axis direction, the second partition area S _{2 can be obtained} . The timing for starting the transfer of the pattern B can be advanced (for example, the transfer to the pattern B can be started at the stage of FIG. 6B), and the throughput can be further improved. However, if the distance between the exposure area IA ₁ and the exposure area IA ₂ in the Y-axis direction is increased, the projection optical system PL becomes larger. Therefore, the distance between the exposure areas takes into consideration the balance between the throughput and the size of the apparatus. To set as appropriate.

In addition, the exposure apparatus 100 of this embodiment includes independent illumination systems IOP ₁ and IOP ₂ that generate illumination lights IL ₁ and IL ₂ , respectively. Thereby, the illumination lights IL ₁ and IL ₂ can be projected on the reticles R ₁₁ , R ₁₂ , R ₂₁ and R ₂₂ under different illumination conditions. This is particularly suitable when the reticles R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ are different from each other.

Further, the exposure apparatus 100 of the present embodiment employs a configuration in which the optical axes AX ₁ and AX ₂ of the illumination lights IL ₁ and IL ₂ are separated in the non-scanning direction (X-axis direction). For this reason, the paths L ₁ and L ₂ along which the reticle stages constituting the first and second stage groups revolve are also arranged apart from each other in the non-scanning direction. Not limited to this, the optical axes AX ₁ and AX ₂ may be spaced apart in the scanning direction (Y-axis direction) or any direction. For example, the optical axes AX ₁ and AX ₂ are separated from each other in the scanning direction (Y-axis direction), and the scanning direction of the reticle stages RST ₁₁ and RST _{12 and} the scanning direction of the reticle stages RST ₂₁ and RST ₂₂ are set in the Y-axis direction. It may be on a straight line parallel to the.

In the exposure apparatus 100 of the present embodiment, the positions of the reticle stages RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ are set by the reticle interferometers 14 ₁ , 14 ₂ , and the position of the wafer stage WST is set by the wafer interferometer 18. However, the present invention is not limited to this. For example, an encoder (an encoder system including a plurality of encoders) may be used instead of the reticle interferometers 14 ₁ and 14 ₂ . Alternatively, reticle interferometers 14 ₁ and 14 ₂ and an encoder may be used in combination. Similarly, an encoder (an encoder system including a plurality of encoders) may be used instead of the wafer interferometer 18. Alternatively, the wafer interferometer 18 and the encoder may be used in combination.

  When the encoder system is used, for example, as disclosed in International Publication No. 2007/097379 (corresponding to US Patent Application Publication No. 2008/08843), a grating portion (Y (Scale, X scale) may be provided, and the X head and Y head may be arranged outside the wafer stage so as to face the scale. For example, it is disclosed in US Patent Application Publication No. 2006/0227309. As shown, an encoder head is provided on the wafer stage, and a grating part (for example, a two-dimensional grating or a two-dimensionally arranged one-dimensional grating part) is arranged outside the wafer stage so as to face the encoder head. A system may be adopted. Further, the Z head may be provided on the wafer stage, and the surface of the lattice portion may be a reflective surface to which the measurement beam of the surface position measurement system Z head is irradiated.

  In the above-described embodiment, the case where the present invention is applied to a dry type exposure apparatus that exposes the wafer W without using liquid (water) is described. However, the present invention is not limited to this. / 49504 pamphlet, European Patent Application Publication No. 1,420,298, International Publication No. 2004/055803 Pamphlet, Japanese Patent Application Laid-Open No. 2004-289126 (corresponding US Pat. No. 6,952,253), etc. In this exposure, an immersion space including an optical path of illumination light is formed between the projection optical system and the wafer, and the wafer is exposed with illumination light through the liquid in the projection optical system and the immersion space. The present invention can also be applied to an apparatus.

  In the above-described embodiment, the case where the present invention is applied to a scanning exposure apparatus such as a step-and-scan method has been described. However, the present invention is not limited thereto, and the step-and- The present invention can also be applied to a stitch type reduction projection exposure apparatus or a mirror projection aligner. Further, as disclosed in, for example, US Pat. No. 6,590,634, US Pat. No. 5,969,441, US Pat. No. 6,208,407, etc. The present invention can also be applied to a multi-stage type exposure apparatus provided with a stage. Further, as disclosed in, for example, WO 2005/074014 pamphlet, an exposure apparatus including a measurement stage including a measurement member (for example, a reference mark and / or a sensor) is provided separately from the wafer stage. The present invention is applicable.

  Further, the projection optical system in the exposure apparatus of the above embodiment may be not only a reduction system but also any of the same magnification and enlargement systems, and the projection optical system PL may be any of a reflection system and a catadioptric system as well as a refraction system. The projected image may be either an inverted image or an erect image. In addition, the illumination area and the exposure area described above are rectangular in shape, but the shape is not limited to this, and may be, for example, an arc, a trapezoid, or a parallelogram.

The light source of the exposure apparatus of the above embodiment is not limited to the ArF excimer laser, but is a KrF excimer laser (output wavelength 248 nm), F ₂ laser (output wavelength 157 nm), Ar ₂ laser (output wavelength 126 nm), Kr ₂ laser ( It is also possible to use a pulse laser light source with an output wavelength of 146 nm, an ultrahigh pressure mercury lamp that emits a bright line such as g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. A harmonic generator of a YAG laser or the like can also be used. In addition, as disclosed in, for example, U.S. Pat. No. 7,023,610, a single wavelength laser beam in an infrared region or a visible region oscillated from a DFB semiconductor laser or a fiber laser as vacuum ultraviolet light, For example, a harmonic which is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.

  In the above embodiment, it is needless to say that the illumination light IL of the exposure apparatus is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may be used. For example, in recent years, in order to expose a pattern of 70 nm or less, EUV (Extreme Ultraviolet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm) is generated using an SOR or a plasma laser as a light source, and its exposure wavelength Development of an EUV exposure apparatus using an all-reflection reduction optical system designed under (for example, 13.5 nm) and a reflective mask is underway. In this apparatus, since a configuration in which scanning exposure is performed by synchronously scanning the mask and the wafer using arc illumination is conceivable, the present invention can also be suitably applied to such an apparatus.

  Further, for example, the present invention can be applied to an exposure apparatus (lithography system) that forms line and space patterns on a wafer by forming interference fringes on the wafer.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, two reticle patterns are synthesized on a wafer via a projection optical system, and one scan exposure is performed on one wafer. The present invention can also be applied to an exposure apparatus that performs double exposure of shot areas almost simultaneously.

  Note that the object on which the pattern is to be formed in the above embodiment (the object to be exposed to the energy beam) is not limited to the wafer, but other objects such as a glass plate, a ceramic substrate, a film member, or a mask blank. But it ’s okay.

  An electronic device such as a semiconductor element includes a step of performing functional / performance design of a device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a mask (reticle) by the exposure apparatus of the above-described embodiment. The lithography step for transferring the pattern to the wafer, the development step for developing the exposed wafer, the etching step for removing the exposed member other than the portion where the resist remains by etching, and the resist that has become unnecessary after the etching. It is manufactured through a resist removal step, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like. In this case, in the lithography step, the exposure method described above is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the wafer. Therefore, a highly integrated device can be manufactured with high productivity.

  The exposure apparatus and exposure method of the present invention are suitable for forming a pattern on an object. The device manufacturing method of the present invention is suitable for manufacturing an electronic device such as a semiconductor element or a liquid crystal display element.

It is a figure which shows schematically the structure of the exposure apparatus which concerns on one Embodiment. It is a block diagram which shows the main structures of the control system of the exposure apparatus of one Embodiment. 3A and 3B are diagrams showing a first configuration example of the reticle drive system. 4A and 4B are diagrams illustrating a second configuration example of the reticle driving system. FIG. 5A and FIG. 5B are diagrams schematically showing the movement paths of the four reticle stages and the wafer stage. FIGS. 6A to 6F are diagrams for explaining the details of the synchronous drive of the four reticle stages and the wafer stage. FIG. 7A to FIG. 7C are views showing the exposure order for a plurality of partitioned regions arranged on the wafer. FIGS. 8A and 8B are diagrams schematically showing the movement paths of the six reticle stages and the wafer stage.

Explanation of symbols

14 ₁ , 14 ₂ ... reticle interferometer, 18 ... wafer interferometer, 20 ... main controller, 22 ₁ , 22 ₂ ... reticle stage drive system, 24 ... wafer stage drive system, 100 ... exposure apparatus, AFS ... focus sensor, AS ... alignment detection system, IOP ₁ , IOP ₂ ... illumination system, PL ... projection optical system, PU ... projection unit, R ₁₁ , R ₁₂ , R ₁₃ , R ₂₁ , R ₂₂ , R ₂₃ ... reticle, RST ₁₁ , RST ₁₂ , RST ₂₁ , RST ₂₂ ... Reticle stage, W... Wafer, WST... Wafer stage.

Claims (41)

An exposure apparatus of a scanning exposure system that transfers a pattern formed on the plurality of masks onto an object using a plurality of masks and one common optical system,
A first moving body that holds the first mask of the plurality of masks and is capable of revolving along a closed path including a first linear path extending in a scanning direction within a predetermined plane;
A second moving body that holds a second mask different from the first mask among the plurality of masks and is capable of circular movement along a closed path including a second linear path extending in the scanning direction;
A third moving body that holds the object and is movable at least in the scanning direction;
An optical system provided in common to the first moving body and the second moving body;
The first and second moving bodies are alternately driven in one direction in the scanning direction , and at the same time, the third moving body is driven in the scanning direction, and the first and second moving bodies respectively hold the first and second moving bodies. And a pattern in which the pattern formed on the second mask is alternately transferred to the plurality of partitioned areas arranged in the scanning direction on the object held by the third moving body via the optical system. An exposure apparatus comprising: a transfer device;   The exposure apparatus according to claim 1, wherein the pattern transfer device drives the first and second moving bodies to rotate in opposite directions.   3. The exposure apparatus according to claim 1, wherein the pattern transfer device continuously drives the first and second moving bodies a plurality of times.   The exposure apparatus according to claim 1, wherein the first and second straight paths are separated along the scanning direction within the predetermined plane.   The pattern transfer device projects a first energy beam onto a sensitive layer of the object through the common optical system and the first mask, and also transmits the sensitive energy through the optical system and the second mask. The exposure apparatus according to claim 1, wherein the second energy beam is projected onto the layer.   The pattern transfer device projects the first energy beam onto the first mask held by the first moving body when the first moving body moves on the first linear path, and The exposure apparatus according to claim 5, wherein when the moving body moves on the second straight path, the second energy beam is projected onto the second mask held by the second moving body.   When the third moving body moves in the scanning direction, the pattern transfer device has the first and second partition regions arranged in the scanning direction on the object held by the third moving body. The exposure apparatus according to claim 5 or 6, wherein the second energy beam is projected alternately.   The exposure apparatus according to claim 7, wherein the pattern transfer device continuously projects the first and second energy beams onto the plurality of partitioned regions.   The said pattern transfer apparatus projects the said 1st and 2nd energy beam to the 1st and 2nd projection point respectively spaced apart in the said scanning direction on the said object, respectively. Exposure equipment.   The pattern transfer device is configured to separate the first and second projection points with respect to the scanning direction in two partitioned regions adjacent to the scanning direction in which the first and second energy beams are arranged on the object. The exposure apparatus according to claim 9, wherein the exposure is performed simultaneously over a time corresponding to the distance.   The exposure apparatus according to claim 5, wherein the first and second energy beams are generated and supplied by independent beam sources.   12. The exposure apparatus according to claim 1, wherein the pattern transfer device drives the first and second moving bodies at a constant speed on the first and second linear paths, respectively.   The exposure apparatus according to claim 12, wherein the pattern transfer device continuously drives the first and second moving bodies at a predetermined distance with respect to the scanning direction.   14. The exposure apparatus according to claim 13, wherein the predetermined distance corresponds to a center-to-center distance between partition areas adjacent to each other in the scanning direction arranged on the object.   The exposure apparatus according to claim 12, wherein the pattern transfer device drives the third moving body at a constant speed in synchronization with constant speed driving of the first and second moving bodies.   The exposure apparatus according to claim 15, wherein the pattern transfer device drives the third moving body at a constant speed over a distance corresponding to the number of the first and second moving bodies that are driven at a constant speed.   The pattern transfer device drives a predetermined number of the first and second moving bodies in one direction along each closed path, and then closes the driven first and second moving bodies. The exposure apparatus according to claim 12, wherein the exposure apparatus is driven in the other direction along the path.   The pattern transfer device reverses the driving direction of the first and second moving bodies and simultaneously reverses the driving direction of the third moving body, and in a non-scanning direction perpendicular to the scanning direction within the predetermined plane. The exposure apparatus according to claim 17, wherein the third moving body is step-driven.   The exposure apparatus according to claim 18, wherein the distance of the step driving corresponds to an arrangement interval of partition areas adjacent to each other in the non-scanning direction arranged on the object.   The exposure apparatus according to any one of claims 1 to 19, wherein the pattern transfer device includes two independent moving body devices that drive the first and second moving bodies, respectively.   The pattern transfer device drives a position measuring system that measures the positions of the first, second, and third moving bodies, and drives the first, second, and third moving bodies according to a measurement result of the position measuring system. An exposure apparatus according to any one of 1 to 20, further comprising: An exposure method of a scanning exposure method for transferring a pattern formed on the plurality of masks onto an object using a plurality of masks and one common optical system,
A first moving body that holds the first mask of the plurality of masks and can move around along a closed path including a first linear path extending in a scanning direction within a predetermined plane; and among the plurality of masks A second moving body that holds a second mask different from the first mask and is capable of reciprocating along a closed path including a second linear path extending in the scanning direction . Simultaneously, the third moving body holding the object is driven in the scanning direction, and the patterns formed on the first and second masks held by the first and second moving bodies, respectively. An exposure method in which images are alternately transferred to a plurality of partitioned areas arranged in the scanning direction on the object held by the third moving body alternately via the common optical system.   The exposure method according to claim 22, wherein the first and second moving bodies are driven to rotate in directions opposite to each other.   The exposure method according to claim 22 or 23, wherein the first and second moving bodies are continuously driven in a plurality of rounds.   25. The exposure method according to any one of claims 22 to 24, wherein the first and second straight paths are separated along the scanning direction within the predetermined plane.   A first energy beam is projected onto the sensitive layer of the object through the optical system and the first mask, and a second energy beam is projected onto the sensitive layer through the optical system and the second mask. The exposure method according to any one of claims 22 to 25.   When the first moving body moves on the first straight path, the first energy beam is projected onto the first mask held by the first moving body, and the second moving body is the second moving body. 27. The exposure method according to claim 26, wherein the second energy beam is projected onto the second mask held by the second moving body when moving on a straight path.   When the third moving body moves in the scanning direction, the first and second energy beams are alternately applied to a plurality of partitioned regions arranged in the scanning direction on the object held by the third moving body. 28. The exposure method according to claim 26 or 27, wherein the exposure method is projected onto.   The exposure method according to claim 28, wherein the first and second energy beams are continuously projected onto the plurality of partitioned regions.   30. The exposure method according to any one of claims 22 to 29, wherein the first and second energy beams are respectively projected onto first and second projection points that are separated from each other in the scanning direction on the object.   Each of the first and second energy beams is arranged on the object in two partitioned regions adjacent to each other in the scanning direction over a time corresponding to a separation distance in the scanning direction between the first and second projection points. The exposure method according to claim 30, wherein the exposure is performed simultaneously.   The exposure method according to any one of claims 22 to 31, wherein the first and second moving bodies are driven at a constant speed on the first and second linear paths, respectively.   The exposure method according to claim 32, wherein the first and second moving bodies are continuously driven at a predetermined distance with respect to the scanning direction.   34. The exposure method according to claim 33, wherein the predetermined distance corresponds to a center-to-center distance between partitioned areas arranged in the scanning direction and arranged on the object.   The exposure method according to any one of claims 32 to 34, wherein the third moving body is driven at a constant speed in synchronization with the constant speed driving of the first and second moving bodies.   36. The exposure method according to claim 35, wherein the third moving body is driven at a constant speed over a distance corresponding to the number of the first and second moving bodies that are driven at a constant speed.   After driving a predetermined number of the first and second moving bodies in one direction along the respective closed paths, the driven first and second moving bodies are driven in the other direction along the respective closed paths. 37. The exposure method according to any one of claims 32 to 36, which is driven in a direction.   At the same time as reversing the driving directions of the first and second moving bodies, the driving direction of the third moving body is reversed, and the third moving body is moved in a non-scanning direction perpendicular to the scanning direction within the predetermined plane. 38. The exposure method according to claim 37, which is step-driven.   39. The exposure method according to claim 38, wherein the distance of the step drive corresponds to an arrangement interval of partition areas adjacent to each other in the non-scanning direction arranged on the object.   40. The position of the first, second, and third moving bodies is measured, and the first, second, and third moving bodies are driven according to the measurement results. Exposure method. A step of forming a pattern on an object using the exposure method according to any one of claims 22 to 40;
Processing the object on which the pattern is formed;
A device manufacturing method including:

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