JP5299638B2 - Exposure apparatus and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner capable of precisely driving a stage for holding a wafer. <P>SOLUTION: A measurement arm 71A positioned within a space surrounded by a slight movement stage WFS1 and a rough movement stage WCS1 for supporting the slight movement stage WFS1 includes an encoder head, applies measurement beams to a grating RG provided in the slight movement stage WFS1 by the head, and receives return beams from the grating RG. Based on output of the head, a slight movement stage position measurement system measures position information of the slight movement stage WFS1. A measurement arm position measurement system 72A<SB>0</SB>measures relative position information to a light axis AX of the measurement arm 71A. Thus, based on measurement results of the slight movement stage position measurement system and the measurement arm position measurement system 72A<SB>0</SB>, the position information of the slight movement stage WFS1 in reference to the light axis AX is measured precisely. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to an exposure apparatus and a device manufacturing method, and more particularly to an exposure apparatus used in a lithography process for manufacturing an electronic device such as a semiconductor element and a device manufacturing method using the exposure apparatus.

  Conventionally, in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements (integrated circuits, etc.), liquid crystal display elements, etc., step-and-repeat projection exposure apparatuses (so-called steppers), step-and- A scanning projection exposure apparatus (a so-called scanning stepper (also called a scanner)) or the like is used.

  Substrates such as wafers or glass plates used in this type of exposure apparatus are gradually becoming larger (for example, every 10 years in the case of wafers). Currently, 300 mm wafers with a diameter of 300 mm are the mainstream, but now the era of 450 mm wafers with a diameter of 450 mm is approaching. In the case of a 450 mm wafer, the number of dies (chips) that can be taken from one wafer is more than twice that of the current 300 mm wafer, contributing to cost reduction. In addition, the efficient use of energy, water and other resources is expected to reduce the use of all resources on a single chip.

    Semiconductor elements are gradually miniaturized, and therefore, high resolution is required for the exposure apparatus. Means for improving the resolution include shortening the wavelength of the exposure light and increasing the numerical aperture of the projection optical system (higher NA). In order to maximize the substantial numerical aperture of the projection optical system, various immersion exposure apparatuses that expose a wafer through the projection optical system and a liquid have been proposed (see, for example, Patent Documents 1 and 2). .

  However, in the local immersion type exposure apparatus disclosed in Patent Documents 1 and 2 and the like, in order to maximize the throughput, in order to maintain the immersion space formed below the projection optical system at all times, the projection is performed. A plurality of stages (for example, two wafer stages, or a wafer stage and a measurement stage) need to be exchangeably disposed immediately below the optical system.

  When the size of the wafer is as large as 450 mm, the wafer stage for holding the wafer is enlarged, and particularly when a plurality of stages are provided, the footprint may be considerably increased. Further, when the wafer stage is enlarged, the position controllability may be lowered.

US Patent Application Publication No. 2005/0259234 US Patent Application Publication No. 2008/0088843

  According to the first aspect of the present invention, there is provided an exposure apparatus that exposes an object with energies via an optical system supported by a support member, having an internal space and at least along a two-dimensional plane. A first movable body that is movable; a holding member that is movably supported by the first movable body, holds the object, and is movable in a plane parallel to at least the two-dimensional plane; and the two-dimensional plane An arm member extending in a direction parallel to a first axis parallel to the arm and allowed to move relative to the support member in the two-dimensional plane; at least a portion of the arm member is provided, and the two-dimensional of the holding member A first measurement member configured to irradiate a measurement beam disposed on one surface substantially parallel to a plane and receive the beam from the measurement surface; and using the output of the first measurement member, the holding member At least the two-dimensional plane of First measurement system for determining the position information of the; second measurement system obtains the position information of said arm member; exposure apparatus equipped with is provided.

  According to this, based on the measurement results of the first and second measurement systems, it is possible to measure the position information of the holding member with reference to a predetermined reference position, for example, the optical axis of the optical system. Based on this, the holding member can be driven (position control) with high accuracy.

  According to a second aspect of the present invention, there is provided a device manufacturing method comprising: exposing an object with the exposure apparatus of the present invention; and developing the exposed object.

It is a figure which shows schematically the structure of the exposure apparatus of one Embodiment. 2A is a side view of the wafer stage provided in the exposure apparatus of FIG. 1 as viewed from the −Y direction, and FIG. 2B is a plan view of the wafer stage. FIG. 2 is a block diagram showing a configuration of a control system of the exposure apparatus in FIG. 1. FIG. 2 is a plan view showing an arrangement of an alignment system and a projection unit PU included in the exposure apparatus of FIG. 1 together with a wafer stage. It is a figure for demonstrating the auxiliary stage with which the exposure apparatus of FIG. 1 is provided. It is a figure for demonstrating the isolation | separation structure of a coarse movement stage. It is a top view which shows arrangement | positioning of the magnet unit and coil unit which comprise a fine movement stage drive system. FIG. 8A is a diagram for explaining an operation when the fine movement stage is rotated around the Z axis with respect to the coarse movement stage, and FIG. 8B is a diagram illustrating the fine movement stage with respect to the coarse movement stage. FIG. 8C is a diagram for explaining the operation when the fine movement stage is rotated about the X axis with respect to the coarse movement stage. It is a figure for demonstrating the operation | movement at the time of bending the center part of a fine movement stage to + Z direction. FIG. 10A is a perspective view showing the distal end portion of the measurement arm, and FIG. 10B is a plan view of the upper surface of the distal end portion of the measurement arm as viewed from the + Z direction. FIG. 11A is a diagram showing a schematic configuration of the X head 77x, and FIG. 11B is a diagram for explaining the arrangement of the X head 77x and the Y heads 77ya and 77yb in the measurement arm. 12A is a view of the auxiliary stage viewed from the + Y direction, FIG. 12B is a view of the auxiliary stage viewed from the + X direction, and FIG. 12C is a view of the auxiliary stage viewed from the + Z direction. It is. FIG. 6 is a diagram (No. 1) for explaining the arrangement relationship between the fine movement stage and the blade. FIG. 14A is a diagram for explaining a wafer driving method during scan exposure, and FIG. 14B is a diagram for explaining a wafer driving method during stepping. FIGS. 15A to 15D are views (No. 1) for describing parallel processing performed using fine movement stages WFS1 and WFS2. FIG. 6 is a diagram (No. 1) for explaining delivery of a liquid immersion space (liquid Lq) performed between a fine movement stage and a blade. FIGS. 17A and 17B are views (No. 2) for explaining the positional relationship between the fine movement stage and the blades. FIG. 10 is a diagram (No. 2) for explaining the delivery of the immersion space (liquid Lq) performed between the fine movement stage and the blade. FIG. 6 is a diagram (No. 3) for explaining the arrangement relationship between the fine movement stage and the blade. FIG. 10 is a diagram (No. 3) for explaining the delivery of the immersion space (liquid Lq) performed between the fine movement stage and the blade. FIGS. 21A to 21F are views (No. 2) for describing parallel processing performed using fine movement stages WFS1 and WFS2. It is a figure which shows an example of the aerial image measuring device comprised by the member provided in each of the fine movement stage and the auxiliary | assistant stage.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to FIGS.

  FIG. 1 schematically shows a configuration of an exposure apparatus 100 according to an embodiment. The exposure apparatus 100 is a step-and-scan projection exposure apparatus, a so-called scanner. As will be described later, in the present embodiment, a projection optical system PL is provided, and in the following, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, and the reticle is in a plane perpendicular to the Z-axis direction. The direction in which the wafer and the wafer are relatively scanned is the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is the X-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are θx and θy, respectively. , And θz direction will be described.

  As shown in FIG. 1, the exposure apparatus 100 is disposed in the vicinity of the −Y side end on the base board 12 and in the vicinity of the + Y side end on the base board 12. A measurement station (measurement processing unit) 300, two wafer stages WST1, WST2, a relay stage DRST, and a control system thereof. Here, the base board 12 is supported substantially horizontally (parallel to the XY plane) on the floor surface by a vibration isolation mechanism (not shown). The base board 12 is made of a member having a flat outer shape, and the upper surface thereof is finished with a very high flatness, and serves as a guide surface when the above-described three stages WST1, WST2, and DRST are moved. In FIG. 1, wafer stage WST1 is positioned at exposure station 200, and wafer W is held on wafer stage WST1 (more specifically, fine movement stage WFS1). Further, wafer stage WST2 is located at measurement station 300, and another wafer W is held on wafer stage WST2 (more specifically, fine movement stage WFS2).

  The exposure station 200 includes an illumination system 10, a reticle stage RST, a projection unit PU, a local liquid immersion device 8, and the like.

  The illumination system 10 includes a light source, an illuminance uniformizing optical system including an optical integrator, a reticle blind, and the like (both not shown) as disclosed in, for example, US Patent Application Publication No. 2003/0025890. And an illumination optical system. The illumination system 10 illuminates a slit-like illumination area IAR on the reticle R defined by a reticle blind (also called a masking system) with illumination light (exposure light) IL with a substantially uniform illuminance. Here, as an example of the illumination light IL, ArF excimer laser light (wavelength 193 nm) is used.

  On reticle stage RST, reticle R having a circuit pattern or the like formed on its pattern surface (lower surface in FIG. 1) is fixed, for example, by vacuum suction. The reticle stage RST can be finely driven in the XY plane by a reticle stage drive system 11 (not shown in FIG. 1, refer to FIG. 3) including, for example, a linear motor and the like, and in the scanning direction (left and right direction in FIG. 1). In the Y-axis direction) at a predetermined scanning speed.

  Position information of the reticle stage RST in the XY plane (including rotation information in the θz direction) is transferred by a reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 13 to a movable mirror 15 (actually fixed to the reticle stage RST). Is provided with a Y moving mirror (or a retroreflector) having a reflecting surface orthogonal to the Y-axis direction and an X moving mirror having a reflecting surface orthogonal to the X-axis direction), for example. It is always detected with a resolution of about 25 nm. The measurement value of reticle interferometer 13 is sent to main controller 20 (not shown in FIG. 1, see FIG. 3).

  Projection unit PU is arranged below reticle stage RST in FIG. The projection unit PU is supported by a main frame (also referred to as a metrology frame) BD supported horizontally by a support member (not shown) via a flange portion FLG provided on the outer peripheral portion thereof. The main frame BD may be configured such that vibration is not transmitted from the outside and vibration is not transmitted to the outside by providing a vibration isolator or the like on the support member. The projection unit PU includes a lens barrel 40 and a projection optical system PL held in the lens barrel 40. As projection optical system PL, for example, a refractive optical system including a plurality of optical elements (lens elements) arranged along optical axis AX parallel to the Z-axis direction is used. The projection optical system PL is, for example, both-side telecentric and has a predetermined projection magnification (for example, 1/4 times, 1/5 times, or 1/8 times). For this reason, when the illumination area IAR on the reticle R is illuminated by the illumination light IL from the illumination system 10, the reticle R in which the first surface (object surface) of the projection optical system PL and the pattern surface are substantially coincided with each other is arranged. Illumination light IL passes through. Then, a reduced image (a reduced image of a part of the circuit pattern) of the reticle R in the illumination area IAR is projected onto the second surface (image) of the projection optical system PL via the projection optical system PL (projection unit PU). Formed on a region (hereinafter also referred to as an exposure region) IA that is conjugate to the illumination region IAR on the wafer W having a resist (sensitive agent) coated on the surface. Then, by synchronously driving the reticle stage RST and the fine movement stage WFS1 (or fine movement stage WFS2), the reticle R is moved relative to the illumination area IAR (illumination light IL) in the scanning direction (Y-axis direction), and the exposure area. By moving the wafer W relative to IA (illumination light IL) in the scanning direction (Y-axis direction), scanning exposure of one shot area (partition area) on the wafer W is performed, and a reticle is placed on the shot area. The R pattern is transferred. That is, in this embodiment, a pattern is generated on the wafer W by the illumination system 10, the reticle R, and the projection optical system PL, and the pattern is formed on the wafer W by exposure of the sensitive layer (resist layer) on the wafer W by the illumination light IL. Is formed.

  The local liquid immersion device 8 is provided corresponding to the exposure apparatus 100 of the present embodiment performing immersion type exposure. The local liquid immersion device 8 includes a liquid supply device 5, a liquid recovery device 6 (both not shown in FIG. 1, refer to FIG. 3), a nozzle unit 32, and the like. As shown in FIG. 1, the nozzle unit 32 holds an optical element on the most image plane side (wafer W side) constituting the projection optical system PL, here a lens (hereinafter also referred to as “tip lens”) 191. It is suspended and supported by a main frame BD that supports the projection unit PU and the like via a support member (not shown) so as to surround the lower end portion of the lens barrel 40. The nozzle unit 32 includes a supply port and a recovery port for the liquid Lq, a lower surface on which the wafer W is disposed and the recovery port is provided, a liquid supply tube 31A and a liquid recovery tube 31B (both not shown in FIG. 1). , See FIG. 4) and a supply channel and a recovery channel respectively connected. The other end of a supply pipe (not shown) whose one end is connected to the liquid supply apparatus 5 (not shown in FIG. 1, see FIG. 3) is connected to the liquid supply pipe 31A. The other end of a recovery pipe (not shown) whose one end is connected to the liquid recovery device 6 (not shown in FIG. 1, see FIG. 3) is connected. In the present embodiment, the main controller 20 controls the liquid supply device 5 (see FIG. 3) to supply liquid between the tip lens 191 and the wafer W via the liquid supply pipe 31A and the nozzle unit 32. Then, the liquid recovery apparatus 6 (see FIG. 3) is controlled to recover the liquid from between the tip lens 191 and the wafer W via the nozzle unit 32 and the liquid recovery pipe 31B. At this time, the main controller 20 controls the liquid supply device 5 and the liquid recovery device 6 so that the amount of supplied liquid and the amount of recovered liquid are always equal. Therefore, a fixed amount of liquid Lq (see FIG. 1) is always exchanged and held between the front lens 191 and the wafer W. In the present embodiment, pure water that transmits ArF excimer laser light (light having a wavelength of 193 nm) is used as the liquid. Note that the refractive index n of pure water with respect to ArF excimer laser light is approximately 1.44. In pure water, the wavelength of the illumination light IL is shortened to 193 nm × 1 / n = about 134 nm.

  In addition, the exposure station 200 is provided with a fine movement stage position measurement system 70A. The fine movement stage position measurement system 70A will be described after the description of the fine movement stage described later for convenience of explanation.

  The measurement station 300 includes an alignment device 99 provided on the main frame BD, and a fine movement stage including a measurement arm 71B supported in a cantilever state (supported in the vicinity of one end) from the main frame BD via a support member 72B. A position measurement system 70B.

Alignment device 99 includes five alignment systems AL1, AL2 ₁ AL24 ₄ shown in FIG. More specifically, as shown in FIG. 4, a straight line passing through the center of the projection unit PU (the optical axis AX of the projection optical system PL, which also coincides with the center of the exposure area IA in the present embodiment) and parallel to the Y axis. On the LV (hereinafter referred to as the reference axis), the primary alignment system AL1 is arranged in a state where the detection center is located at a position spaced a predetermined distance from the optical axis AX to the -Y side. Secondary alignment systems AL2 ₁ , AL2 ₂ , AL2 ₃ , AL2 _{4 in} which detection centers are arranged almost symmetrically with respect to the reference axis LV are disposed on one side and the other side of the X-axis direction across the primary alignment system AL1. Each is provided. That is, the detection centers of the five alignment systems AL1, AL2 _{1 to} AL2 ₄ are arranged along the X-axis direction. In FIG. 1, the alignment device 99 includes five alignment systems AL1, AL2 _{1 to} AL2 ₄ and a holding device (slider) for holding them.

As the alignment systems AL1, AL2 _{1 to} AL2 ₄ , for example, the target mark is irradiated with a broadband detection light beam that does not expose the resist on the wafer and the reflected light from the target mark forms an image on the light receiving surface. An image processing type FIA that takes an image and an image of an index (not shown) of an index (an index pattern on an index plate provided in each alignment system) using an image sensor (CCD or the like) and outputs the imaged signals. (Field Image Alignment) system is used. Imaging signals from the alignment systems AL1, AL2 _{1 to} AL2 ₄ are supplied to the main controller 20 (see FIG. 3).

The primary alignment system AL1 is suspended and supported on the lower surface of the main frame BD via a support member. The secondary alignment systems AL2 ₁ , AL2 ₂ , AL2 ₃ , AL2 ₄ are each a pair of FIA surface plates (not shown) fixed to the lower surface of the main frame BD via sliders (not shown) fixed to the upper surface thereof. Is magnetically adsorbed on the surface. That is, each slider is provided with a permanent magnet, and each slider, that is, each of the secondary alignment systems AL2 ₁ , AL2 ₂ , AL2 ₃ , AL2 ₄ , normally has a magnetic attraction force of the permanent magnet. It is adsorbed by a pair of FIA surface plates (not shown) (landing state). Each slider is provided with a gas hydrostatic bearing that generates a repulsive force against the opposing FIA surface plate. The balance between the repulsive force generated by the gas hydrostatic bearing and the magnetic attractive force of the permanent magnet is provided. Each slider, that is, each of the secondary alignment systems AL2 ₁ , AL2 ₂ , AL2 ₃ , AL2 ₄ is in a state (floating state) in which a predetermined clearance is formed and maintained between the opposing FIA surface plate. You can also.

  Further, an actuator (alignment system motor) capable of driving each slider in the XY plane is provided between each slider and the FIA surface plate facing the slider.

Then, main controller 20 sets each slider in a floating state and controls each actuator, thereby driving each slider in the XY plane and setting each slider in a landing state after driving. As a result, it is possible to adjust the positions of the secondary alignment systems AL2 ₁ , AL2 ₂ , AL2 ₃ , AL2 ₄ in the XY plane.

  Details of the configuration and the like of the alignment apparatus 99 of the present embodiment are disclosed in, for example, International Publication No. 2008/056735.

  As can be seen from FIGS. 1 and 2A and the like, wafer stage WST1 is levitated and supported on base board 12 by a plurality of non-contact bearings, for example, air bearings 94 provided on the bottom surface thereof, and drives coarse movement stage. Coarse movement stage WCS1 driven in an XY two-dimensional direction by system 51A (see FIG. 3), and fine movement stage WFS1 supported in a non-contact state by coarse movement stage WCS1 and movable relative to coarse movement stage WCS1 have. Fine movement stage WFS1 is in a direction of six degrees of freedom (X-axis direction, Y-axis direction, Z-axis direction, θx direction, θy direction, and θz direction) with respect to coarse movement stage WCS1 by fine movement stage drive system 52A (see FIG. 3). Hereinafter, it is driven (abbreviated as (X, Y, Z, θx, θy, θz))).

  Position information (including rotation information in the θz direction) of wafer stage WST1 (coarse movement stage WCS1) in the XY plane is obtained (measured) by wafer stage position measurement system 16A. Further, the position information of the fine movement stage WFS1 (or fine movement stage WFS2) supported by the coarse movement stage WCS1 in the exposure station 200 in the six degrees of freedom direction (X, Y, Z, θx, θy, θz) is the fine movement stage position measurement. It is obtained (measured) by the system 70A. The measurement results (measurement information) of wafer stage position measurement system 16A and fine movement stage position measurement system 70A are sent to main controller 20 (see FIG. 3) for position control of coarse movement stage WCS1 and fine movement stage WFS1 (or WFS2). Supplied.

  Similar to wafer stage WST1, wafer stage WST2 is levitated and supported on base board 12 by a plurality of non-contact bearings (for example, air bearings (not shown)) provided on the bottom surface thereof, and coarse movement stage drive system 51B (FIG. 3), a coarse movement stage WCS2 driven in the XY two-dimensional direction, and a fine movement stage WFS2 supported in a non-contact state on the coarse movement stage WCS2 and movable relative to the coarse movement stage WCS2. Yes. Fine movement stage WFS2 is driven in directions of six degrees of freedom (X, Y, Z, θx, θy, θz) with respect to coarse movement stage WCS2 by fine movement stage drive system 52B (see FIG. 3).

  Position information (including rotation information in the θz direction) of wafer stage WST2 (coarse movement stage WCS2) in the XY plane is obtained (measured) by wafer stage position measurement system 16B. Further, the position information of the fine movement stage WFS2 (or WFS1) supported by the coarse movement stage WCS2 in the measurement station 300 in the directions of six degrees of freedom (X, Y, Z, θx, θy, θz) is the fine movement stage position measurement system 70B. Is obtained (measured). Measurement information of wafer stage position measurement system 16B and fine movement stage position measurement system 70B is supplied to main controller 20 (see FIG. 3) for position control of coarse movement stage WCS2 and fine movement stage WFS2 (or WFS1).

  Similar to coarse movement stages WCS1 and WCS2, relay stage DRST is levitated and supported on base board 12 by a plurality of non-contact bearings (for example, air bearings (not shown)) provided on the bottom surface thereof, and relay stage drive system 53 (See FIG. 3), it can be driven in the XY two-dimensional direction.

  Position information in the XY plane of relay stage DRST (including rotation information in the θz direction) is obtained (measured) by a position measurement system (not shown) including an interferometer and / or an encoder, for example. The measurement information of the position measurement system is supplied to the main controller 20 (see FIG. 3) for position control of the relay stage DRST.

  Furthermore, although not shown in FIG. 1, the exposure apparatus 100 of the present embodiment includes an auxiliary stage AST having a blade BL in the vicinity of the projection unit PU as shown in FIG.

  The configuration of each part of the stage system including the various measurement systems will be described in detail later.

In addition, the exposure apparatus 100 of the present embodiment has an image pickup device such as a CCD above the reticle stage RST as disclosed in detail in, for example, US Pat. No. 5,646,413. , A pair of reticle alignment systems RA ₁ and RA _{2 of} an image processing system using exposure wavelength light (illumination light IL in this embodiment) as alignment illumination light (in FIG. 1, the reticle alignment system RA ₂ is a reticle alignment system). It is hidden behind the RA ₁ paper surface. The pair of reticle alignment systems RA ₁ and RA ₂ is formed on the reticle R by the main controller 20 in a state in which a later-described measurement plate on the fine movement stage WFS1 (or WFS2) is positioned directly below the projection optical system PL. The projection optical system PL projects the pattern of the reticle R by detecting the projection image of the pair of reticle alignment marks (not shown) and the pair of first reference marks on the measurement plate corresponding to the projection images. This is used to detect the positional relationship between the center of the region and the reference position on the measurement plate, that is, the center of the pair of first reference marks. Detection signals of reticle alignment systems RA ₁ and RA ₂ are supplied to main controller 20 through a signal processing system (not shown) (see FIG. 3).

  FIG. 3 shows the main configuration of the control system of the exposure apparatus 100. The control system is configured around the main controller 20. The main controller 20 includes a workstation (or a microcomputer) or the like, and the above-described local liquid immersion device 8, coarse movement stage drive systems 51A and 51B, fine movement stage drive systems 52A and 52B, and a relay stage drive system 53, etc. The overall configuration of each part of the exposure apparatus 100 is controlled.

  Here, the configuration of each part of the stage system will be described in detail. First, wafer stages WST1 and WST2 will be described. In the present embodiment, wafer stage WST1 and wafer stage WST2 are configured in exactly the same way, including their drive system, position measurement system, and the like. Therefore, the following description will be made taking the wafer stage WST1 as a representative.

  As shown in FIGS. 2 (A) and 2 (B), coarse movement stage WCS1 has a rectangular plate shape (cuboid shape) having a longitudinal direction in the X-axis direction in plan view (as viewed from the + Z direction). A pair of rectangular plate-like members that are fixed to the upper surface of one end and the other end in the longitudinal direction of the moving slider 91 and the coarse slider 91 in a state parallel to the YZ plane, and whose longitudinal direction is the Y-axis direction. Side wall portions 92a and 92b, and a pair of stator portions 93a and 93b fixed to the upper surfaces of the side wall portions 92a and 92b, respectively. As a whole, coarse movement stage WCS1 has a box-like shape with a low height in which an X-axis center portion of the upper surface and both side surfaces in Y-axis direction are open. That is, in coarse movement stage WCS1, a space portion penetrating in the Y-axis direction is formed inside.

  As shown in FIG. 6, coarse movement stage WCS1 is configured to be separable into two parts, a first part WCS1a and a second part WCS1b, with a separation line at the center in the longitudinal direction of coarse movement slider 91 as a boundary. Has been. Accordingly, the coarse slider 91 is composed of a first slider 91a that constitutes a part of the first part WCS1a and a second slider 91b that constitutes a part of the second part WCS1b.

  As shown in FIG. 1, a coil unit including a plurality of coils 14 arranged in a matrix with the XY two-dimensional direction as the row direction and the column direction is accommodated inside the base board 12.

  Corresponding to the coil unit, the bottom surface of the coarse movement stage WCS1, that is, the bottom surface of the first slider portion 91a and the second slider portion 91b has an XY two-dimensional direction as shown in FIG. 6 and FIG. A magnet unit comprising a plurality of permanent magnets 18 arranged in a matrix in the row direction and the column direction is provided. The magnet units, together with the coil unit of the base board 12, are coarse movement stage drive systems 51Aa, 51Ab (FIG. 3) composed of a Lorentz electromagnetic force drive type planar motor disclosed in, for example, US Pat. No. 5,196,745. Each). The magnitude | size and direction of the electric current supplied to each coil 14 which comprises a coil unit are controlled by the main controller 20 (refer FIG. 3).

  A plurality of air bearings 94 are fixed around the magnet unit on the bottom surfaces of the first and second slider portions 91a and 91b. The first part WCS1a and the second part WCS1b of the coarse movement stage WCS1 are levitated and supported on the base board 12 by air bearings 94 through a predetermined clearance, for example, a clearance of about several μm, and the coarse movement stage drive system 51Aa. , 51Ab to drive in the X-axis direction, the Y-axis direction, and the θz direction.

  Normally, the first part WCS1a and the second part WCS1b are integrated and locked via a lock mechanism (not shown). That is, normally, the first part WCS1a and the second part WCS1b operate integrally. Therefore, hereinafter, a drive system composed of a planar motor for driving coarse movement stage WCS1 formed by integrating first part WCS1a and second part WCS1b is referred to as coarse movement stage drive system 51A (see FIG. 3).

  The coarse stage driving system 51A is not limited to a Lorentz electromagnetic force driving type planar motor, but may be a variable magnetoresistive driving type planar motor, for example. In addition, the coarse movement stage drive system 51A may be configured by a magnetic levitation type planar motor. In this case, it is not necessary to provide an air bearing on the bottom surface of the coarse slider 91.

  Each of the pair of stator portions 93a and 93b is made of a plate-shaped member, and coil units CUa and CUb each including a plurality of coils for driving the fine movement stage WFS1 (or WFS2) are accommodated therein. . The main controller 20 controls the magnitude and direction of the current supplied to the coils constituting the coil units CUa and CUb. The configuration of the coil units CUa and CUb will be described later. Here, fine movement stage WFS1 and fine movement stage WFS2 are configured in exactly the same manner, and are similarly supported and driven in a non-contact manner by coarse movement stage WCS1, but in the following, fine movement stage WFS1 will be representatively taken up. I will explain.

  Each of the pair of stator portions 93a and 93b has a rectangular plate shape whose longitudinal direction is the Y-axis direction, as shown in FIGS. 2 (A) and 2 (B). The end portion on the + X side of the stator portion 93a is fixed to the upper surface of the side wall portion 92a, and the end portion on the −X side of the stator portion 93b is fixed to the upper surface of the side wall portion 92b.

  As shown in FIGS. 2A and 2B, fine movement stage WFS1 includes a main body portion 81 made of an octagonal plate-like member whose longitudinal direction is the X-axis direction in plan view, and A pair of mover portions 82a and 82b fixed to one end portion and the other end portion in the longitudinal direction are provided.

  The main body 81 is formed of a transparent material through which light can pass because the measurement beam (laser light) of an encoder system to be described later needs to be able to travel inside. The main body 81 is formed to be solid (no space in the interior) in order to reduce the influence of air fluctuations on the laser light inside. Note that the transparent material preferably has a low coefficient of thermal expansion. In this embodiment, synthetic quartz (glass) or the like is used as an example. The main body 81 may be made of a transparent material as a whole, but only a portion through which the measurement beam of the encoder system is transmitted may be made of a transparent material, and this measurement beam is transmitted. Only the portion may be formed solid.

  A wafer holder (not shown) that holds the wafer W by vacuum suction or the like is provided at the center of the upper surface of the main body 81 of the fine movement stage WFS1. Note that the wafer holder may be formed integrally with fine movement stage WFS1, or may be fixed to main body 81 via, for example, an electrostatic chuck mechanism or a clamp mechanism, or by adhesion.

Further, the upper surface of the main body 81 is slightly larger than the wafer W (wafer holder), as shown in FIGS. 2A and 2B, outside the wafer holder (mounting area of the wafer W). A plate (liquid repellent plate) 83 having an octagonal outer shape (contour) corresponding to the main body 81 and having a circular opening formed at the center is attached. The surface of the plate 83 is subjected to a liquid repellent process (a liquid repellent surface is formed) with respect to the liquid Lq. The plate 83 is fixed to the upper surface of the main body 81 so that the entire surface (or part) of the plate 83 is flush with the surface of the wafer W. Further, at the −Y side end portion of the plate 83, as shown in FIG. 2B, the surface thereof is substantially flush with the surface of the plate 83, that is, the surface of the wafer W in the X-axis direction. An elongated rectangular measuring plate 86 is installed. On the surface of the measurement plate 86, a pair of first reference marks (not shown) detected by the pair of reticle alignment systems RA ₁ and RA ₂ described above and a _second reference mark (not shown) detected by the primary alignment system AL1 are provided. And other measurement members (details will be described later) and the like.

  As shown in FIG. 2A, in a region slightly larger than the wafer W on the upper surface of the main body 81, a two-dimensional grating (hereinafter simply referred to as a grating) RG is horizontal (parallel to the surface of the wafer W). Has been placed. The grating RG includes a reflective diffraction grating (X diffraction grating) whose periodic direction is the X-axis direction and a reflective diffraction grating (Y diffraction grating) whose periodic direction is the Y-axis direction.

  The upper surface of the grating RG is covered and protected by a protective member, for example, a cover glass 84. In the present embodiment, the above-described electrostatic chuck mechanism for attracting and holding the wafer holder is provided on the upper surface of the cover glass 84. In the present embodiment, the cover glass 84 is provided so as to cover almost the entire upper surface of the main body 81, but may be provided so as to cover only a part of the upper surface of the main body 81 including the grating RG. good. The protective member (cover glass 84) may be formed of the same material as that of the main body 81, but is not limited thereto, and the protective member may be formed of metal, ceramics, or a thin film, for example. You may comprise.

  As can be seen from FIG. 2 (A), the main body 81 is composed of an octagonal plate-like member as a whole in which a protruding portion protruding outward is formed at the lower end of both end portions in the longitudinal direction. A recess is formed in a portion facing RG. The main body 81 is formed in a plate shape having a substantially uniform thickness in the central region where the grating RG is disposed.

  On the upper surface of each of the + X side and −X side projecting portions of the main body 81, spacers 85a and 85b having a convex cross section are extended in the Y-axis direction with the convex portions 89a and 89b facing outward. Yes.

As shown in FIGS. 2A and 2B, the mover portion 82a has a Y-axis direction dimension (length) and an X-axis direction dimension (width) that are both shorter than the stator portion 93a (see FIG. It includes _two plate-like members 82a ₁ and 82a ₂ having a rectangular shape in plan view (about half). These two plate-like members 82a ₁ and 82a ₂ are predetermined in the Z-axis direction (up and down) with respect to the end portion on the + X side in the longitudinal direction of the main body portion 81 via the convex portion 89a of the spacer 85a. Both are fixed in parallel to the XY plane while being separated by a distance. In this case, the −X side end portion of the plate-like member 82 a ₂ is sandwiched between the spacer 85 a and the + X side protruding portion of the main body portion 81. Between the two plate-like members 82a ₁ and 82a ₂ , the end on the −X side of the stator portion 93a of the coarse movement stage WCS1 is inserted without contact. Magnet units MUa ₁ and MUa ₂ described later are accommodated in the plate-like members 82a ₁ and 82a ₂ .

The mover portion 82b includes two plate-like members 82b ₁ and 82b ₂ in which a predetermined interval is maintained in the Z-axis direction (up and down) on the spacer 85b. Has been. Between the two plate-like members 82b ₁ and 82b ₂ , the end on the + X side of the stator portion 93b of the coarse movement stage WCS is inserted in a non-contact manner. Magnet units MUb ₁ and MUb ₂ configured in the same manner as the magnet units MUa ₁ and MUa ₂ are accommodated in the plate-like members 82b ₁ and 82b ₂ .

Here, as described above, since coarse movement stage WCS1 is open on both sides in the Y-axis direction, when attaching fine movement stage WFS1 to coarse movement stage WCS1, plate-like members 82a ₁ and 82a _{2 are provided.} , And 82b ₁ , 82b ₂ , the fine movement stage WFS1 is positioned in the Z-axis direction so that the stator parts 93a, 93b are positioned, and then the fine movement stage WFS1 is moved (slid) in the Y-axis direction. It ’s fine.

  Next, the configuration of fine movement stage drive system 52A for driving fine movement stage WFS1 relative to coarse movement stage WCS1 will be described.

The fine movement stage drive system 52A includes a pair of magnet units MUa ₁ and MUa ₂ included in the above-described mover portion 82a, a coil unit CUa included in the stator portion 93a, and a pair of magnet units MUb _{1 included} in the mover portion 82b. MUb ₂ and a coil unit CUb included in the stator portion 93b are included.

  This will be described in further detail. As can be seen from FIG. 7, at the end on the −X side inside the stator portion 93a, a plurality of (here, 12) rectangular YZ coils in plan view (hereinafter simply referred to as “coils” as appropriate). ) 55 and 57 are arranged at equal intervals in the Y-axis direction, and two coil arrays are arranged at predetermined intervals in the X-axis direction. The YZ coil 55 has an upper winding and a lower winding (both windings are not shown) having a rectangular shape in plan view and arranged in an up-down direction (Z-axis direction). Further, one X coil (hereinafter referred to as a “coil” as appropriate) having a rectangular shape in plan view with the Y-axis direction as the longitudinal direction between the above-described two coil rows inside the stator portion 93a. 56) are arranged. In this case, the two coil rows and the X coil 56 are arranged at equal intervals in the X-axis direction. A coil unit CUa is configured including two coil rows and an X coil 56.

  In the following, one stator part 93a and the movable part 82a supported by the stator part 93a will be described with reference to FIG. 7, but the other (−X side) stator part 93b and the movable part are movable. The child portion 82b is configured in the same manner as these and functions in the same manner.

Inside part constituting the + Z side of the plate-like member 82a ₁ of the mover section 82a of the fine movement stage WFS1, as seen with reference to FIG. 7, a plurality of rectangular shape as viewed in plan to the X-axis direction is the longitudinal direction ( Two permanent magnets 65a and 67a are arranged at equal intervals in the Y-axis direction, and are arranged at predetermined intervals in the X-axis direction. Each of the two magnet rows is arranged to face the coils 55 and 57.

  The plurality of permanent magnets 65a are arranged in such an arrangement that their polarities are alternately reversed with respect to their arrangement direction (Y-axis direction). The magnet array composed of the plurality of permanent magnets 67a is configured in the same manner as the magnet array composed of the plurality of permanent magnets 65a.

In addition, a pair (two) of permanent members having a longitudinal direction in the Y-axis direction, which is arranged in the plate-like member 82a ₁ and is spaced apart in the X-axis direction between the above-described two magnet rows. Magnets 66 a ₁ and 66 a ₂ are disposed to face the coil 56. The permanent magnets 66a ₁ and 66a ₂ are arranged so as to have opposite polarities.

A magnet unit MUa ₁ is configured by the plurality of permanent magnets 65a, 67a and 66a ₁ , 66a ₂ described above.

The permanent magnets are also arranged in the plate-like member 82a ₂ on the −Z side in the same arrangement as that of the plate-like member 82a ₁ described above, and the magnet unit MUa ₂ is configured by these permanent magnets. .

Here, in fine movement stage drive system 52A, a plurality of permanent magnets 65a arranged adjacent to each other in the Y-axis direction are two adjacent permanent magnets (a first permanent magnet and a second permanent magnet for convenience) 65a. When facing a winding portion of a YZ coil (referred to as a first YZ coil for convenience) 55, a third permanent magnet 65a adjacent to the second permanent magnet 65 is adjacent to the first YZ coil 55 described above. A plurality of permanent magnets 65 and a plurality of YZ coils so as not to face the winding portion of the second YZ coil 55 (to face a hollow portion in the center of the coil or a core around which the coil is wound, for example, an iron core). The positional relationship (each interval) of 55 in the Y-axis direction is set. In this case, each of the fourth permanent magnet 65a and the fifth permanent magnet 65a adjacent to the third permanent magnet 65a faces the winding portion of the third YZ coil 55 adjacent to the second YZ coil 55. . Permanent magnets 67a, and the distance also in the Y-axis direction of the inner two rows permanent magnet array of the -Z side of the plate-like member 82a _2, has the same.

  In the fine movement stage drive system 52A of the present embodiment, the arrangement of the coils and permanent magnets as described above is adopted, so that the main controller 20 has a plurality of YZ coils 55 and 57 arranged in the Y-axis direction. On the other hand, fine current stage WFS1 can be driven in the Y-axis direction by supplying a current every other time. At the same time, the main controller 20 supplies current to a coil that is not used to drive the fine movement stage WFS1 in the Y-axis direction among the YZ coils 55 and 57, thereby moving the Y-axis direction in the Y-axis direction. Apart from the driving force, it is possible to generate a driving force in the Z-axis direction so that fine movement stage WFS1 is levitated from coarse movement stage WCS1. Then, main controller 20 maintains the floating state of coarse movement stage WFS1 with respect to coarse movement stage WCS1, that is, the non-contact state, by sequentially switching the current supply target coil according to the position of fine movement stage WFS1 in the Y-axis direction. However, fine movement stage WFS1 is driven in the Y-axis direction. Further, main controller 20 can be driven in the X-axis direction independently of the Y-axis direction in a state where fine movement stage WFS1 is lifted from coarse movement stage WCS1.

  Further, as shown in FIG. 8 (A), for example, main controller 20 provides a Y-axis having different sizes to + X-side movable element 82a and -X-side movable element 82b of fine movement stage WFS1. By applying a driving force (thrust force) in the direction (see the black arrow in FIG. 8A), fine movement stage WFS1 can be rotated around the Z axis (rotated by θz) (white in FIG. 8A). See the drop arrow). Contrary to FIG. 8A, the fine movement stage WFS1 is rotated counterclockwise with respect to the Z axis by making the driving force applied to the + X side movable element 82a larger than the -X side. Can do.

  Further, as shown in FIG. 8 (B), main controller 20 causes levitation force (FIG. 8 (FIG. 8 (B)) on + X side mover portion 82a and −X side mover portion 82b of fine movement stage WFS1. By operating (see the black arrow in B), the fine movement stage WFS can be rotated around the Y axis (θy drive) (see the white arrow in FIG. 8B). Contrary to FIG. 8B, the fine movement stage WFS1 can be rotated counterclockwise with respect to the Y axis by making the levitation force acting on the mover portion 82a larger than that on the mover portion 82b side. it can.

  Further, as shown in FIG. 8C, for example, main controller 20 has different levitation forces on the + side and the − side in the Y-axis direction in each of the mover portions 82a and 82b of fine movement stage WFS1. By operating the solid arrow in FIG. 8C, the fine movement stage WFS1 can be rotated around the X axis (θx drive) (see the white arrow in FIG. 8C). Contrary to FIG. 8C, the fine movement stage is made by making the levitation force acting on the −Y side portion of the mover portion 82a (and 82b) smaller than the levitation force acting on the + Y side portion. WFS1 can be rotated counterclockwise with respect to the X axis.

  As can be seen from the above description, in the present embodiment, fine movement stage WFS1 is levitated and supported in a non-contact state with coarse movement stage WCS1 by fine movement stage drive system 52A, and non-moving with respect to coarse movement stage WCS1. It can be driven in the direction of six degrees of freedom (X, Y, Z, θx, θy, θz) by contact.

  In the present embodiment, when the main controller 20 applies a levitation force to the fine movement stage WFS1, the two rows of coils 55 and 57 (see FIG. 7) arranged in the stator portion 93a are opposed to each other. By supplying the current, for example, as shown in FIG. 9, the floating force (see the black arrow in FIG. 9) and the rotational force about the Y axis (see the white arrow in FIG. 9) are simultaneously applied to the mover portion 82a. See). Further, main controller 20 causes the central portion of fine movement stage WFS1 to move in the + Z direction or the −Z direction by applying a rotational force around the Y axis in the opposite direction to each of the pair of mover portions 82a and 82b. Can be bent (see hatched arrows in FIG. 9). Accordingly, as shown in FIG. 9, the center portion of fine movement stage WFS1 is bent in the + Z direction, so that intermediate position in the X-axis direction of fine movement stage WFS1 (main body portion 81) caused by the weight of wafer W and main body portion 81 is obtained. The degree of parallelism with respect to the XY plane (horizontal plane) of the surface of the wafer W can be secured by canceling the deflection of the portion. This is particularly effective when the diameter of the wafer W is increased and the fine movement stage WFS1 is increased in size. FIG. 9 shows an example in which fine movement stage WFS1 is bent in the + Z direction (in a convex shape). However, by controlling the direction of the current with respect to the coil, in the opposite direction (in a concave shape) It is also possible to bend the fine movement stage WFS1.

  In exposure apparatus 100 of the present embodiment, during step-and-scan exposure operation on wafer W, position information (including position information in the θz direction) of fine movement stage WFS1 in the XY plane is received by main controller 20. It is obtained (measured) using an encoder system 73 (see FIG. 3) of a fine movement stage position measurement system 70A described later. The position information of fine movement stage WFS1 is sent to main controller 20, and main controller 20 controls the position of fine movement stage WFS1 based on this position information.

  In contrast, when wafer stage WST1 (fine movement stage WFS1) is positioned outside the measurement area of fine movement stage position measurement system 70A, position information of wafer stage WST1 (and fine movement stage WFS1) is obtained by main controller 20. Measurement is performed using a wafer stage position measurement system 16A (see FIGS. 1 and 3). As shown in FIG. 1, wafer stage position measurement system 16A irradiates a length measurement beam onto a reflection surface formed by mirror finishing on the side surface of coarse movement stage WCS1, and obtains position information of wafer stage WST1 in the XY plane. Includes a laser interferometer (to measure). Although not shown in FIG. 1, actually, coarse movement stage WCS1 is formed with a Y reflecting surface perpendicular to the Y axis and an X reflecting surface perpendicular to the X axis. In addition, the laser interferometer is also provided with an X interferometer and a Y interferometer for irradiating a measurement beam on the X reflecting surface and the Y reflecting surface, respectively. In wafer stage position measurement system 16A, for example, the Y interferometer has a plurality of measurement axes, and also measures position information (rotation information) in the θz direction of wafer stage WST1 based on the output of each measurement axis. it can. Note that the position information of wafer stage WST1 in the XY plane may be measured by another measuring device, for example, an encoder system, instead of the above-described wafer stage position measuring system 16A. In this case, for example, a two-dimensional scale can be arranged on the upper surface of the base board 12, and an encoder head can be provided on the bottom surface of the coarse movement stage WCS1.

As described above, fine movement stage WFS2 is configured in the same manner as fine movement stage WFS1 described above, and can be supported in a non-contact manner on coarse movement stage WCS1 instead of fine movement stage WFS1. In this case, wafer stage WST1 is constituted by coarse movement stage WCS1 and fine movement stage WFS2 supported by coarse movement stage WCS1, and a pair of mover portions (each pair of magnet units MUa ₁ and MUa) provided in fine movement stage WFS2 are provided. ₂ and MUb ₁ , MUb ₂ ) and a pair of stator parts 93a, 93b (coil units CUa, CUb) of the coarse movement stage WCS1 constitute a fine movement stage drive system 52A. Then, fine movement stage drive system 52A drives fine movement stage WFS2 in the direction of six degrees of freedom in a non-contact manner relative to coarse movement stage WCS1.

Fine movement stages WFS2 and WFS1 can be supported by coarse movement stage WCS2 in a non-contact manner, and wafer stage WST2 is configured by coarse movement stage WCS2 and fine movement stage WFS2 or WFS1 supported by coarse movement stage WCS2. Is done. In this case, a pair of mover parts (each pair of magnet units MUa ₁ , MUa ₂ and MUb ₁ , MUb ₂ ) provided in fine movement stage WFS2 or WFS1 and a pair of stator parts 93a, 93b (coil unit) of coarse movement stage WCS2 CUa, CUb) constitutes fine movement stage drive system 52B (see FIG. 3). Then, fine movement stage drive system 52B drives fine movement stage WFS2 or WFS1 in the direction of six degrees of freedom in a non-contact manner relative to coarse movement stage WCS2.

  Returning to FIG. 1, the relay stage DRST is similar to the coarse movement stages WCS1 and WCS2 (however, it is not configured to be separated into the first part and the second part), And a transfer device 46 (see FIG. 3) provided inside the main body 44. Accordingly, the stage main body 44 can support (hold) the fine movement stage WFS1 or WFS2 in a non-contact manner, similarly to the coarse movement stages WCS1 and WCS2, and the fine movement stage supported by the relay stage DRST is the fine movement stage. The driving system 52C (see FIG. 3) can drive the relay stage DRST in directions of six degrees of freedom (X, Y, Z, θx, θy, θz). However, the fine movement stage only needs to be slidable at least in the Y-axis direction with respect to the relay stage DRST.

  The transfer device 46 includes a transfer member main body that can reciprocate with a predetermined stroke in the Y-axis direction along both side walls in the X-axis direction of the stage main body 44 of the relay stage DRST and can move up and down with a predetermined stroke also in the Z-axis direction. The transport member 48 including a moving member that holds the fine movement stage WFS1 or WFS2 and can move relative to the transport member main body in the Y-axis direction, and the transport member main body and the moving member constituting the transport member 48 are individually driven. A possible conveyance member drive system 54 (see FIG. 3) is provided.

  Next, fine movement stage position measurement system 70A (see FIG. 3) used for measuring position information of fine movement stage WFS1 or WFS2 (moving from wafer stage WST1) held movably on coarse movement stage WCS1 in exposure station 200. ) Will be described. Here, the case where fine movement stage position measurement system 70A measures the positional information of fine movement stage WFS1 will be described.

  As shown in FIG. 1, an encoder head or the like constituting a part of fine movement stage position measurement system 70A is provided inside coarse movement stage WCS1 with wafer stage WST1 disposed below projection optical system PL. The measuring arm 71A is inserted into the space. This will be described later. The measurement arm 71A is supported in a cantilevered state (supported in the vicinity of one end) by the measurement arm stage 72A that can move the -Y side region of the projection optical system PL on the base board 12 with the Y-axis direction as the longitudinal direction Has been. The measurement arm stage 72A is levitated and supported on the base board 12 by a plurality of non-contact bearings (for example, air bearings (not shown)) provided on the bottom surface thereof, and XY2 is measured by the measurement arm drive system 59 (see FIG. 3). Driven in the dimensional direction.

In exposure apparatus 100 of the present embodiment, the position of the measuring arm 71A, i.e., the measurement arm position measuring system 72A ₀ for measuring the position of the measuring arm stage 72A, is provided. For example, as shown in FIGS. 1 and 5, the measurement arm position measurement system 72 </ b> A ₀ is provided on the reflection surface of the reference mirror (fixed mirror) 72 </ _b > A ₂ fixed to the side surface (or main frame BD) of the projection optical system PL. irradiates a reference beam, and irradiates measurement beams on the reflection surface 72A ₁ provided in the measurement arm 71A (or measurement arm stage 72A which supports the measuring arm 71A), the corresponding reflective surface of the reference beam and the measurement beam receiving a reflected beam from, X of measurement arm 71A relative to the Y position of the reference mirror 72A ₂ (measurement arm stage 72A), it can be constituted by a laser interferometer system that measures the Y and θz position.

Measuring position by the measuring arm position measuring system 72A ₀ (measurement result) is sent to main controller 20 (see FIG. 3). The main controller 20, normal, based on the measurement arm position measuring system 72A ₀ of measurement results, and measurement arm drive system 59 drives the measuring arm stage 72A through (see FIG. 3) (position control), The measuring arm 71A is maintained in the positioning state to the reference position. Here, the reference position of the measurement arm 71A means a position where a measurement center of an encoder system 73 and a laser interferometer system 75, which will be described later, coincides with the optical axis AX of the projection optical system PL.

  However, when measuring the optical characteristics of the projection optical system PL using various measuring instruments of the auxiliary stage AST described later, the main controller 20 retracts the measuring arm 71A out of the reference position.

  The measurement arm 71A is a quadrangular columnar (that is, rectangular parallelepiped) member having a longitudinally long rectangular cross section in which the dimension in the height direction (Z-axis direction) is larger than the width direction (X-axis direction) with the Y-axis direction as the longitudinal direction. And a plurality of the same materials that transmit light, for example, glass members are bonded together. The measurement arm 71A is formed solid, except for a portion in which an encoder head (optical system) described later is accommodated. As described above, the measurement arm 71A is inserted into the space portion of the coarse movement stage WCS1 in a state where the wafer stage WST1 is disposed below the projection optical system PL as described above, and as shown in FIG. Is opposed to the lower surface of the fine movement stage WFS1 (more precisely, the lower surface of the main body 81 (not shown in FIG. 1, refer to FIG. 2A, etc.)). The upper surface of measurement arm 71A is arranged substantially parallel to the lower surface of fine movement stage WFS1, with a predetermined clearance, for example, a clearance of about several millimeters, formed between the lower surface of fine movement stage WFS1.

  As shown in FIG. 3, fine movement stage position measurement system 70A includes an encoder system 73 that measures the positions of fine movement stage WFS1 in the X-axis direction, Y-axis direction, and θz direction, Z-axis direction of fine movement stage WFS1, and θx. And a laser interferometer system 75 that measures a position in the direction and the θy direction. The encoder system 73 includes an X linear encoder 73x that measures the position of the fine movement stage WFS1 in the X-axis direction, and a pair of Y linear encoders 73ya and 73yb that measure the position of the fine movement stage WFS1 in the Y-axis direction (hereinafter, these are combined as appropriate). Y linear encoder 73y). In the encoder system 73, for example, the same encoder head disclosed in US Pat. No. 7,238,931 and US Patent Application Publication No. 2007/288121 (hereinafter abbreviated as a head as appropriate). A diffraction interference type head having a configuration is used. However, in this embodiment, as described later, in the head, the light source and the light receiving system (including the photodetector) are arranged outside the measurement arm 71A, and only the optical system is inside the measurement arm 71A, that is, the grating RG. It is arranged to face. Hereinafter, the optical system arranged inside the measurement arm 71A is referred to as a head unless particularly required.

  10A shows a perspective view of the distal end portion of the measurement arm 71A, and FIG. 10B shows a plan view of the upper surface of the distal end portion of the measurement arm 71A viewed from the + Z direction. Has been. The encoder system 73 measures the position of the fine movement stage WFS1 in the X-axis direction with one X head 77x (see FIGS. 11A and 11B), and determines the position in the Y-axis direction with a pair of Y heads 77ya, Measurement is performed at 77 yb (see FIG. 11B). That is, the X head 77x that measures the position of the fine movement stage WFS1 in the X-axis direction using the X diffraction grating of the grating RG constitutes the X linear encoder 73x, and the fine movement stage WFS1 using the Y diffraction grating of the grating RG. A pair of Y linear encoders 73ya and 73yb is configured by the pair of Y heads 77ya and 77yb that measure the position in the Y-axis direction.

As shown in FIGS. 10A and 10B, the X head 77x has two points on the straight line LX parallel to the X axis that are equidistant from the center line CL of the measurement arm 71A in the Y axis direction. (Refer to the white circles in FIG. 10B.) Measurement beams LBx ₁ and LBx ₂ (shown by solid lines in FIG. 10A) are irradiated onto the grating RG. The measurement beams LBx ₁ and LBx ₂ are irradiated to the same irradiation point on the grating RG (see FIG. 11A). The irradiation points of the measurement beams LBx ₁ and LBx ₂ , that is, the detection points of the X head 77 x (see reference numeral DP in FIG. 10B) are irradiated to the wafer W at the normal time when the measurement arm 71 A is positioned at the reference position. It coincides with the exposure position that is the center of the irradiation area (exposure area) IA of the illumination light IL to be emitted (see FIG. 1). That is, as shown in FIG. 10A, the position where the detection point DP coincides with the center of the exposure area IA (coincidence with the optical axis AX) is set as the reference position of the measurement arm 71A. The measurement beams LBx ₁ and LBx ₂ are actually refracted at the interface between the main body 81 and the air layer, but are simplified in FIG. 11A and the like.

As shown in FIG. 11B, each of the pair of Y heads 77ya and 77yb is disposed on the + X side and the −X side of the aforementioned center line CL of the measurement arm 71A. As shown in FIGS. 10A and 10B, the Y head 77ya is arranged on a straight line Lya parallel to the Y axis, and two points (equal to the straight line LX) (see FIG. 10B). From the white circles), measurement beams LBya ₁ and LBya ₂ indicated by broken lines in FIG. 10A are irradiated to the common irradiation points on the grating RG. The irradiation points of the measurement beams LBya ₁ and LBya ₂ , that is, the detection points of the Y head 77ya are indicated by reference sign DPya in FIG.

Similarly to the Y head 77ya, the Y head 77yb is disposed on a straight line LYb parallel to the Y axis that is the same distance as the straight line LYa from the center line CL of the measurement arm 71A, and has two equal distances from the straight line LX (see FIG. 10 (B) (see white circle), the measurement beams LByb ₁ and LByb ₂ are irradiated to the common irradiation point DPyb on the grating RG. As shown in FIG. 10 (B), the measurement beam LBya _1, LBya ₂ and measurement beams LByb _1, LByb ₂ each detection point DPya, DPyb is placed on a parallel line LX in the X-axis. Here, in main controller 20, the position of fine movement stage WFS1 in the Y-axis direction is determined based on the average of the measurement values of two Y heads 77ya and 77yb. Therefore, in the present embodiment, the position of fine movement stage WFS1 in the Y-axis direction is measured using the midpoint of detection points DPya and DPyb as a substantial measurement point. The midpoints of the detection points DPya and DPyb detected by the Y heads 77ya and 77yb coincide with the irradiation point DP on the grating RG of the measurement beams LBx ₁ and LBX ₂ . That is, in the present embodiment, there is a common detection point regarding the measurement of the positional information of fine movement stage WFS1 in the X-axis direction and the Y-axis direction, and this detection point is usually the measurement arm 71A positioned at the reference position. Sometimes, it coincides with the exposure position which is the center of the irradiation area (exposure area) IA of the illumination light IL irradiated onto the wafer W. Therefore, in the present embodiment, the main controller 20 uses the encoder system 73 to transfer the pattern of the reticle R to a predetermined shot area of the wafer W placed on the fine movement stage WFS1, thereby moving the fine movement stage WFS1. The position information in the XY plane can always be measured directly below the exposure position (on the back side of fine movement stage WFS1). Further, main controller 20 measures the position of fine movement stage WFS in the Y-axis direction, and fine movement stage based on the difference between the measurement values of a pair of Y heads 77ya and 77yb that are spaced apart in the X-axis direction. The amount of rotation of WFS in the θz direction is measured.

  Here, the configuration of the three heads 77x, 77ya, 77yb constituting the encoder system 73 will be described. FIG. 11A shows a schematic configuration of the X head 77x as a representative of the three heads 77x, 77ya, and 77yb. FIG. 11B shows the arrangement of the X head 77x and the Y heads 77ya and 77yb in the measurement arm 71A.

  As shown in FIG. 11A, the X head 77x includes a polarization beam splitter PBS whose separation surface is parallel to the YZ plane, a pair of reflection mirrors R1a and R1b, lenses L2a and L2b, a quarter-wave plate. (Hereinafter referred to as λ / 4 plate) WP1a, WP1b, reflection mirrors R2a, R2b, reflection mirrors R3a, R3b, etc., and these optical elements are arranged in a predetermined positional relationship. The Y heads 77ya and 77yb also have an optical system having the same configuration. As shown in FIGS. 11A and 11B, the X head 77x and the Y heads 77ya and 77yb are unitized and fixed inside the measurement arm 71A.

As shown in FIG. 11B, in the X head 77x (X linear encoder 73x), in the −Z direction from the light source LDx provided on the upper surface (or above) the end of the measurement arm 71A on the −Y side. laser beam LBx ₀ is emitted, the light path parallel to the Y-axis direction through an angle oblique set the reflected surface RP of 45 ° to the XY plane is bent in a part of the measuring arm 71A. The laser beam LBx ₀ is a solid section inside measurement arm 71A, and proceeding in parallel in the longitudinal direction (Y-axis direction) of the measurement arm 71A, reaches the reflection mirror R3a shown in Figure 11 (A). Then, the optical path of the laser beam LBx ₀ is incident on the polarization beam splitter PBS after its optical path is bent by the reflection mirror R3a. The laser beam LBx ₀ is polarized and separated by the polarization beam splitter PBS to become two measurement beams LBx ₁ and LBx ₂ . The measurement beam LBx ₁ transmitted through the polarization beam splitter PBS reaches the grating RG formed on the fine movement stage WFS1 via the reflection mirror R1a, and the measurement beam LBx ₂ reflected by the polarization beam splitter PBS passes through the reflection mirror R1b. Reach the grating RG. Here, “polarized light separation” means that an incident beam is separated into a P-polarized component and an S-polarized component.

A diffracted beam of a predetermined order generated from the grating RG by irradiation of the measurement beams LBx ₁ and LBx ₂ , for example, a first-order diffracted beam is converted into circularly polarized light by the λ / 4 plates WP1a and WP1b via the lenses L2a and L2b, respectively. After that, the light is reflected by the reflection mirrors R2a and R2b, passes through the λ / 4 plates WP1a and WP1b again, follows the same optical path as the forward path in the reverse direction, and reaches the polarization beam splitter PBS.

The polarization directions of the two first-order diffracted beams that have reached the polarization beam splitter PBS are each rotated by 90 degrees with respect to the original direction. Therefore, the first-order diffracted beam of the measurement beam LBx ₁ that has passed through the polarizing beam splitter PBS is reflected by the polarizing beam splitter PBS. The first-order diffracted beam of the measurement beam LBx ₂ previously reflected by the polarizing beam splitter PBS is transmitted through the polarizing beam splitter PBS. Thereby, the first-order diffracted beams of the measurement beams LBx ₁ and LBx ₂ are combined on the same axis as a combined beam LBx ₁₂ . The combined beam LBx ₁₂ has its optical path bent in parallel with the Y-axis by the reflecting mirror R3b, travels in the measurement arm 71A in parallel with the Y-axis, and passes through the reflecting surface RP described above with reference to FIG. ), The light is transmitted to the X light receiving system 74x provided on the upper surface (or above) of the end portion on the −Y side of the measurement arm 71A.

In the X light receiving system 74x, the first-order diffracted beams of the measurement beams LBx ₁ and LBx ₂ synthesized as the synthesized beam LBx ₁₂ are aligned in polarization direction by a polarizer (analyzer) (not shown) and interfere with each other to cause interference light. This interference light is detected by a photodetector (not shown) and converted into an electrical signal corresponding to the intensity of the interference light. Here, when fine movement stage WFS1 moves in the measurement direction (in this case, the X-axis direction), the phase difference between the two beams changes and the intensity of the interference light changes. This change in the intensity of the interference light is supplied to main controller 20 (see FIG. 3) as positional information regarding fine movement stage WFS1 in the X-axis direction.

As shown in FIG. 11B, the Y heads 77ya and 77yb emit laser beams LBya emitted from the respective light sources LDya and LDyb and parallel to the Y axis whose optical path is bent by 90 ° at the reflection surface RP. ₀ and LByb ₀ are incident, and in the same manner as described above, the combined beam LBya of the first-order diffracted beam by the grating RG (Y diffraction grating) of each of the measurement beams deflected and separated by the deflecting beam splitter from the Y heads 77ya and 77yb. ₁₂ and LByb ₁₂ are respectively output and returned to the Y light receiving systems 74ya and 74yb. Here, the light source LDya, laser beam LBya _0, LByb ₀ and Y light receiving systems 74ya emitted from LDyb, the combined beams _{LBya 12,} LByb 12 returned to 74yb, optical path overlap in a direction perpendicular to the page surface in FIG. 11 (B) Through each. Further, as described above, the laser beam LBya _0, LByb ₀ and Y light receiving systems 74ya emitted from the light source, and a combined beam _{LBya 12,} LByb 12 returned to 74yb, through the optical path parallel apart in the Z-axis direction As described above, in the Y heads 77ya and 77yb, the optical paths are appropriately bent inside (not shown).

As shown in FIG. 10A, the laser interferometer system 75 causes the _three length measuring beams LBz ₁ , LBz ₂ , and LBz ₃ to enter the lower surface of the fine movement stage WFS from the distal end portion of the measurement arm 71A. The laser interferometer system 75 includes three laser interferometers 75a to 75c (see FIG. 3) that irradiate these three length measuring beams LBz ₁ , LBz ₂ , and LBz ₃ .

In the laser interferometer system 75, the three measurement beams LBz ₁ , LBz ₂ , and LBz ₃ are on the same straight line on the upper surface of the measurement arm 71A as shown in FIGS. 10 (A) and 10 (B). Injected in parallel to the Z-axis from each of the three points that are not present. Here, as shown in FIG. 10B, the _three measurement beams LBz ₁ , LBz ₂ , and LBz ₃ have their center of gravity at the detection point DP (this is because the measurement arm 71A is at the reference position). At a certain time, irradiation is performed from the position of each vertex of an isosceles triangle (or equilateral triangle) that coincides with the exposure position that is the center of the irradiation area (exposure area) IA. In this case, the emission point (irradiation point) of the measurement beam LBz ₃ is located on the center line CL, and the emission points (irradiation points) of the remaining measurement beams LBz ₁ and LBz ₂ are equidistant from the center line CL. is there. In the present embodiment, main controller 20 uses laser interferometer system 75 to measure information on the position of fine movement stage WFS1 in the Z-axis direction and the amount of rotation in the θz direction and the θy direction. The laser interferometers 75a to 75c are provided on the upper surface (or above) of the end portion on the −Y side of the measurement arm 71A. The measurement beams LBz ₁ , LBz ₂ , and LBz ₃ emitted in the −Z direction from the laser interferometers 75a to 75c travel along the Y-axis direction in the measurement arm 71A via the reflection surface RP, and Each optical path is bent and emitted from the above-mentioned three points.

  In the present embodiment, a wavelength selection filter (not shown) that transmits each measurement beam from the encoder system 73 and prevents transmission of each measurement beam from the laser interferometer system 75 is provided on the lower surface of the fine movement stage WFS1. It has been. In this case, the wavelength selection filter also serves as a reflection surface of each measurement beam from the laser interferometer system 75.

  As can be seen from the above description, main controller 20 can measure the position of fine movement stage WFS1 in the direction of six degrees of freedom by using encoder system 73 and laser interferometer system 75 of fine movement stage position measurement system 70A. it can. In this case, in the encoder system 73, since the optical path length of the measurement beam in the air is extremely short and almost equal, the influence of the air fluctuation can be almost ignored. Therefore, position information (including the θz direction) of fine movement stage WFS1 in the XY plane can be measured with high accuracy by encoder system 73. The detection point on the bottom surface of fine movement stage WFS in the Z-axis direction by laser interferometer system 75 is used as a reference by measurement arm 71A as a detection point on the X-axis direction and the Y-axis direction by encoder system 73 and in the Z-axis direction. At the normal time of the position, each coincides with the center (exposure position) of the exposure area IA, so that the occurrence of so-called Abbe error is suppressed to a level that can be substantially ignored. Therefore, main controller 20 can measure the position of fine movement stage WFS1 in the X-axis direction, the Y-axis direction, and the Z-axis direction with high accuracy without Abbe error by using fine movement stage position measurement system 70A. When coarse movement stage WCS1 is below projection unit PU and fine movement stage WFS2 is movably supported by coarse movement stage WCS1, main controller 20 uses fine movement stage position measurement system 70A. Thus, the position of the fine movement stage WFS2 in the direction of 6 degrees of freedom can be measured. In particular, the positions of the fine movement stage WFS2 in the X axis direction, the Y axis direction, and the Z axis direction can be measured with high accuracy without Abbe error. .

  Further, fine movement stage position measurement system 70B provided in measurement station 300 is basically configured in the same manner as fine movement stage position measurement system 70A as shown in FIG. However, the measurement arm 71B included in the fine movement stage position measurement system 70B has the Y-axis direction as the longitudinal direction, and the vicinity of the + Y side end is substantially cantilevered from the main frame BD via the support member 72B.

  When coarse movement stage WCS2 is below alignment apparatus 99 and fine movement stage WFS2 or WFS1 is movably supported by coarse movement stage WCS2, main controller 20 uses fine movement stage position measurement system 70B. Thus, the position of fine movement stage WFS2 or WFS1 in the 6-degree-of-freedom direction can be measured. In particular, the positions of fine movement stage WFS2 or WFS1 in the X-axis direction, Y-axis direction, and Z-axis direction are high without Abbe error. It can be measured accurately.

  Next, the configuration and the like of the auxiliary stage AST will be described in detail.

  12A, 12B, and 12C are a side view of the auxiliary stage AST that is positioned immediately below the projection optical system PL (a view seen from the + Y direction), and a front view, respectively. A diagram (a diagram viewed from the + X direction) and a plan view (a diagram viewed from the + Z direction) are shown. The auxiliary stage AST has a rectangular slider portion 60a whose longitudinal direction is the X-axis direction in a plan view (as viewed from the + Z direction) and a square fixed to a portion excluding the + X side end of the upper surface of the slider portion 60a. A columnar support portion (optical system accommodation portion) 60b, a rectangular table 60c supported by the support portion 60b except for the + X side end, and a plate-like blade BL fixed to the upper surface of the table 60c And.

  Although not shown, a plurality of permanent magnets that constitute an auxiliary stage drive system 58 (see FIG. 3), which is composed of a Lorentz electromagnetic force driven planar motor, together with the coil unit of the base board 12, are not shown on the bottom surface of the slider portion 60 a. A magnet unit is provided. A plurality of air bearings (not shown) are fixed around the magnet unit on the bottom surface of the slider portion 60a. The auxiliary stage AST is levitated and supported on the base board 12 by an air bearing through a predetermined clearance, for example, a clearance of about several μm, and is driven by the auxiliary stage drive system 58 in the X-axis direction and the Y-axis direction. .

  Normally, as shown in FIG. 13, the auxiliary stage AST is located in the exposure station 200, and is a standby position that is a predetermined distance or more away from the measurement arm 71A used for measuring the position of the fine movement stage WFS1 on the −X side. Waiting to Since the blade BL constitutes a part of the auxiliary stage AST, when the auxiliary stage AST is driven in the XY plane, the blade BL is driven in the XY plane. That is, the auxiliary stage drive system 58 also serves as a blade drive system that drives the blade BL in the X-axis direction and the Y-axis direction.

  As shown in FIGS. 12B and 12C, the blade BL is formed of a substantially rectangular plate member in which a part of the + Y side end protrudes from the other part, and the protrusion is a table 60c. It is fixed to the upper surface of the table 60c so as to protrude from the upper surface.

  The upper surface of the blade BL is liquid repellent with respect to the liquid Lq. The blade BL includes, for example, a metal base material such as stainless steel and a film of a liquid repellent material formed on the surface of the base material. Examples of the liquid repellent material include PFA (Tetrafluoroethylene-perfluoroalkylvinylether copolymer), PTFE (Polytetrafluoroethylene), and Teflon (registered trademark). The material for forming the film may be an acrylic resin or a silicon resin. The entire blade BL may be formed of at least one of PFA, PTFE, Teflon (registered trademark), acrylic resin, and silicon resin. In the present embodiment, the contact angle of the upper surface of the blade BL with respect to the liquid Lq is, for example, 90 degrees or more.

  The auxiliary stage AST can be engaged with the measurement arm 71A from the −X side through a predetermined gap, and in this engaged state, a part of the blade BL (near the end on the + X side) of the measurement arm 71A. It is located directly above (see, for example, FIG. 12A). In FIG. 12A, the measurement arm 71A is moved (withdrawn) from the position directly below the optical axis AX of the projection optical system PL to the + X side integrally with the above-described measurement arm stage 72A (FIG. 12A). ) See the white arrow in the middle).

  Further, the blade BL can be brought into contact with the fine movement stage WFS1 (or WFS2) supported by the coarse movement stage WCS1 from the −Y side or through a clearance of about 300 μm, and the fine movement stage in the contact or proximity state A seemingly integral full flat surface is formed together with the upper surface of WFS1 (or WFS2) (see, for example, FIG. 16). The blade BL (auxiliary stage AST) is driven by the main controller 20 via the auxiliary stage drive system 58, and transfers the immersion space (liquid Lq) to and from the fine movement stage WFS1 (or WFS2). The delivery of the immersion space (liquid Lq) between the blade BL and fine movement stage WFS1 (or WFS2) will be further described later.

  Inside the table 60c and the support 60b, various measuring instruments for measuring the optical characteristics of the projection optical system PL, such as an illuminance unevenness sensor (not shown), a wavefront aberration measuring instrument (not shown), and an aerial image measuring device. 61 etc. are provided. As the illuminance unevenness sensor, for example, a sensor having a configuration disclosed in US Pat. No. 4,465,368 can be employed. As the wavefront aberration measuring instrument, for example, a Shack-Hartman measuring instrument disclosed in US Patent Application Publication No. 2005/020850 can be adopted.

  FIG. 12A typically shows the configuration of the aerial image measurement device 61. The aerial image measurement device 61 includes an optical system including optical members such as slit plates 61a, mirrors 61b and 61c, a light transmission lens 61d, and others disposed on the upper surface of the table 60c of the auxiliary stage AST and the support 60b. And a light receiving system 62 fixed to the main frame BD, that is, a light receiving lens 62a and an optical sensor 62b.

  The slit plate 61a is arranged in a state of closing a circular opening formed in the plate member constituting the blade BL so that the upper surface thereof is the same as the upper surface of the blade BL. A flat blade BL is formed. Here, the height of the upper surface of the slit plate 61a, that is, the upper surface of the blade BL, is the upper surface of the fine movement stage WFS1 (or WFS2) supported by the coarse movement stage WCS1 (or WCS2) and the fine movement stage WFS1 (or WFS2). Is substantially equal to the height of the surface of the wafer W placed on the substrate. The slit plate 61a is composed of a circular light-receiving glass formed of synthetic quartz or fluorite having high transparency to the illumination light IL, and a metal thin film such as aluminum formed outside the central circular region on the upper surface thereof. A reflecting film (also serving as a light shielding film) and a light shielding film made of a chromium thin film formed in a circular region.

  For example, the light shielding film (slit plate 61a) has an opening pattern (X slit) having a predetermined width (for example, 0.2 μm) whose longitudinal direction is the Y-axis direction and a predetermined width (for example, the longitudinal direction is the X-axis direction). , 0.2 μm) opening pattern (Y slit) is formed by patterning.

  According to the aerial image measurement device 61, the illumination light IL (image light beam) incident vertically downward (−Z direction) via the slit plate 61a is bent in the −X direction by the mirror 61b. The bent illumination light IL is bent in the + X direction by the mirror 61c and sent out to the outside of the table 60c through the light transmission lens 61d. The illumination light IL is received by the optical sensor 62b through the light receiving lens 62a. As the optical sensor 62b, a photoelectric conversion element (light receiving element) that accurately detects weak light, for example, a photomultiplier tube (PMT, photomultiplier tube) or the like is used.

  The output signal of the light receiving system 62 (the optical sensor 62b) is sent to a signal processing device (not shown) including, for example, an amplifier, an A / D converter (usually one having a resolution of 16 bits), etc. Is sent to the main controller 20.

  The aerial image measurement device 61 is configured similarly to the aerial image measurement device disclosed in, for example, US Patent Application Publication No. 2002/0041377. Therefore, the main controller 20 is formed on the reticle or the reference plate on the reticle stage by using the aerial image measuring device 61 by a method similar to the method disclosed in US Patent Application Publication No. 2002/0041377. A profile (aerial image profile) of the projected image (aerial image) of the X measurement mark (Y measurement mark) is obtained.

  In the exposure apparatus 100 of the present embodiment configured as described above, one fine movement stage (here, WFS1 as an example) is held by the coarse movement stage WCS1 in the exposure station 200 during device manufacture. The wafer W held on the wafer W is subjected to step-and-scan exposure, and the pattern of the reticle R is transferred to a plurality of shot areas on the wafer W, respectively. This step-and-scan exposure operation is performed in advance by the main controller 20 as a result of wafer alignment (for example, an array of shot areas on the wafer W obtained by enhanced global alignment (EGA)). Information obtained by converting the coordinates into coordinates based on the second reference mark), the result of reticle alignment, and the like, and the fine movement stage to the scanning start position (acceleration start position) for exposure of each shot area on the wafer W This is performed by repeating an inter-shot moving operation in which the WFS 1 is moved and a scanning exposure operation in which a pattern formed on the reticle R is transferred to each shot area by a scanning exposure method. The above exposure operation is performed in a state where the liquid Lq is held between the tip lens 191 and the wafer W, that is, by immersion exposure. Further, the processing is performed in the order from the shot area located on the + Y side to the shot area located on the −Y side. The EGA is disclosed in detail in, for example, US Pat. No. 4,780,617.

In exposure apparatus 100 of the present embodiment, during a series of exposure operations described above, the main controller 20, based on the measurement result of the position of the measuring arm 71A (measurement arm stage 72A) by the measuring arm position measuring system 72A _0, measured The positioning state of the arm 71A to the reference position is maintained. Further, during the exposure operation, the fine movement stage WFS1 is determined by the main controller 20 based on the measurement result of the position of the fine movement stage WFS1 (wafer W) based on the optical axis AX of the projection optical system PL by the fine movement stage position measurement system 70A. The position of (wafer W) is controlled.

  During the scanning exposure operation described above, the wafer W needs to be driven at a high acceleration in the Y-axis direction. However, in the exposure apparatus 100 of the present embodiment, the main controller 20 performs the operation shown in FIG. As shown in FIG. 14A, in principle, the coarse movement stage WCS1 is not driven, and only the fine movement stage WFS1 is driven in the Y-axis direction (and also in other five degrees of freedom as necessary) (FIG. 14). Thus, the wafer W is scanned in the Y-axis direction. This is because moving the fine movement stage WFS1 alone is more advantageous than the case of driving the coarse movement stage WCS1, because the weight of the object to be driven can be reduced and the wafer W can be driven at a high acceleration. Further, as described above, fine movement stage position measurement system 70A has higher position measurement accuracy than wafer stage position measurement system 16A, so it is advantageous to drive fine movement stage WFS1 during scanning exposure. Note that during this scanning exposure, the coarse movement stage WCS1 is driven to the opposite side of the fine movement stage WFS1 by the action of the reaction force (see the white arrow in FIG. 14A) due to the driving of the fine movement stage WFS1. That is, coarse movement stage WCS1 functions as a counter mass, and the momentum of the system consisting of wafer stage WST1 as a whole is preserved and the center of gravity does not move. Therefore, the partial weight is applied to base board 12 by the scanning drive of fine movement stage WFS1. There will be no inconvenience.

  On the other hand, when performing the shot-to-shot movement (stepping) operation in the X-axis direction, main control device 20 is shown in FIG. 14B because the amount of fine movement stage WFS1 that can be moved in the X-axis direction is small. As described above, by driving coarse movement stage WCS1 in the X-axis direction, wafer W is moved in the X-axis direction.

  In parallel with the exposure of the wafer W on one fine movement stage WFS1, the wafer exchange, wafer alignment, and the like are performed on the other fine movement stage WFS2. In the wafer exchange, when the coarse movement stage WCS2 that supports the fine movement stage WFS2 is at a predetermined wafer exchange position near the measurement station 300, the wafer W that has been exposed is finely moved by the wafer transfer system (not shown). This is performed by unloading from above and loading a new wafer W onto fine movement stage WFS2.

In wafer alignment, main controller 20 first drives fine movement stage WFS2 to position measurement plate 86 on fine movement stage WFS2 immediately below primary alignment system AL1, and uses second alignment standard AL1 as the second reference. Detect the mark. Then, main controller 20 moves wafer stage WST2 in the −Y direction, for example, as disclosed in, for example, US Patent Application Publication No. 2008/0088843, and the wafer is placed at a plurality of locations on the movement path. The stage WST is positioned, and each time positioning is performed, position information of the alignment mark in the alignment shot area (sample shot area) is detected using at least one of the alignment systems AL1, AL2 ₂ , AL2 ₃ . For example, considering the case where positioning is performed four times, main controller 20 uses primary alignment system AL1, secondary alignment systems AL2 ₂ and AL2 ₃ in the first positioning, for example, in three sample shot areas. alignment marks (hereinafter, also referred to as sample marks), and the second alignment system during positioning AL1, AL2 ₁ AL24 ₄ five samples marks on wafer W using the alignment system during the third positioning AL1, AL2 ₁ The five sample marks are detected using .about.AL2 ₄ and the three sample marks are detected using the primary alignment system AL1, the secondary alignment systems AL2 ₂ and AL2 ₃ at the time of the fourth positioning. As a result, the position information of the alignment marks in a total of 16 alignment shot regions can be obtained in a much shorter time than when 16 alignment marks are sequentially detected by a single alignment system. In this case, in conjunction with the movement operation of wafer stage WST2, alignment systems AL1, AL2 ₂ , AL2 ₃ are sequentially arranged in the detection region (for example, corresponding to the detection light irradiation region). A plurality of alignment marks (sample marks) arranged along the direction are detected. Therefore, it is not necessary to move wafer stage WST2 in the X-axis direction when measuring the alignment mark.

  In the present embodiment, main controller 20 includes detection of the second reference mark, and during wafer alignment, fine movement stage position measurement system 70B including measurement arm 71B is used for coarse movement stage WCS2 at the time of wafer alignment. The position of the fine movement stage WFS2 supported in the XY plane is measured. However, not limited to this, when the fine movement stage WFS2 is moved integrally with the coarse movement stage WCS2 during wafer alignment, the wafer alignment is performed while measuring the position of the wafer W via the wafer stage position measurement system 16B. May be performed. Further, since measurement station 300 and exposure station 200 are separated from each other, the position of fine movement stage WFS2 is managed on different coordinate systems during wafer alignment and during exposure. Therefore, main controller 20 converts the array coordinates of each shot area on wafer W obtained as a result of the wafer alignment into array coordinates based on the second reference mark.

  In this way, the wafer alignment with respect to the wafer W held on the fine movement stage WFS2 is completed. At this time, the exposure on the wafer W held on the fine movement stage WFS1 is still continued in the exposure station 200. FIG. 15A shows the positional relationship between the coarse movement stages WCS1 and WCS2 and the relay stage DRST when the wafer alignment with respect to the wafer W is completed.

  Main controller 20 drives wafer stage WST2 through a coarse movement stage drive system 51B by a predetermined distance in the -Y direction, as indicated by the white arrow in FIG. It is brought into contact with or close to the relay stage DRST that is stationary at the center position of the optical axis PL of the optical system PL and the center position of the detection center of the primary alignment system AL1.

  Next, main controller 20 controls the current flowing through the YZ coils of fine movement stage drive systems 52B and 52C so that fine movement stage WFS2 is indicated by the black arrow in FIG. 15C by Lorentz force. , -Y direction, and fine movement stage WFS2 is transferred from coarse movement stage WCS2 to relay stage DRST. FIG. 15D shows a state where transfer of fine movement stage WFS2 to relay stage DRST is completed.

  Main controller 20 waits for the exposure of wafer W on fine movement stage WFS1 to be completed in a state where relay stage DRST and coarse movement stage WCS2 are on standby at the positions shown in FIG.

  FIG. 16 shows the state of wafer stage WST1 immediately after the exposure is completed.

  Prior to the end of exposure, main controller 20 starts the auxiliary stage from the standby position (see FIG. 13) via auxiliary stage drive system 58 (see FIG. 3) as shown by the white arrow in FIG. The AST (blade BL) is driven by a predetermined amount in the + X direction. Accordingly, as shown in FIG. 17A, the vicinity of the + X end portion of the blade BL is positioned directly above the measurement arm 71A. Then, main controller 20 waits for the exposure to end in this state.

  When the exposure is completed, main controller 20 drives auxiliary stage AST (blade BL) in the + X direction and the + Y direction via auxiliary stage drive system 58 (see the white arrow in FIG. 17B). As shown in FIGS. 16 and 17B, the blade BL is brought into contact with the fine movement stage WFS1 in the Y-axis direction or close to it through a clearance of about 300 μm. That is, main controller 20 starts setting the scram state for blade BL and fine movement stage WFS1. Thereafter, main controller 20 drives auxiliary stage AST (blade BL) slightly further in the + X direction. Then, when the X-axis direction center of the + Y side protrusion of the blade BL coincides with the center of the measurement arm 71A, the scram state between the blade BL and the fine movement stage WFS1 is changed as shown in FIGS. While maintaining, the auxiliary stage AST (blade BL) is driven in the + Y direction integrally with wafer stage WST1 (see white arrows in FIGS. 18 and 19). Thereby, the immersion space formed with the liquid Lq held between the front end lens 191 is transferred from the fine movement stage WFS1 to the blade BL. FIG. 18 shows a state immediately before the immersion space formed by the liquid Lq is transferred from the fine movement stage WFS1 to the blade BL. In the state of FIG. 18, the liquid Lq is held between the tip lens 191 and the fine movement stage WFS1 and the blade BL.

  When the transfer of the immersion space from fine movement stage WFS1 to blade BL is finished, as shown in FIG. 20, coarse movement stage WCS1 holding fine movement stage WFS1 holds fine movement stage WFS2 at the aforementioned standby position. Then, it contacts the relay stage DRST that is waiting in a state of being close to the coarse movement stage WCS2 or closes through a clearance of about 300 μm. In the middle of the movement of coarse movement stage WCS1 holding fine movement stage WFS1 in the + Y direction, main controller 20 causes coarse movement stage to move conveyance member 48 of conveyance device 46 via conveyance member drive system 54. It is inserted into the space of WCS1.

  When coarse movement stage WCS1 holding fine movement stage WFS1 comes into contact with or approaches relay stage DRST, main controller 20 drives conveyance member 48 upward to support fine movement stage WFS1 from below.

  In this state, main controller 20 releases the lock mechanism (not shown) and separates coarse movement stage WCS1 into first part WCS1a and second part WCS1b. Thereby, fine movement stage WFS1 can be detached from coarse movement stage WCS1. Therefore, main controller 20 drives downward conveying member 48 supporting fine movement stage WFS1 as indicated by the white arrow in FIG.

  Then, main controller 20 combines the first part WCS1a and the second part WCS1b of coarse movement stage WCS1 and then locks a lock mechanism (not shown).

  Next, main controller 20 moves transport member 48 that supports fine movement stage WFS1 from below into stage body 44 of relay stage DRST. FIG. 21B shows a state where the transport member 48 is moving. The main controller 20 controls the current flowing through the Y drive coils of the fine movement stage drive systems 52C and 52A in parallel with the movement of the conveying member 48, and the fine movement stage WFS2 is controlled by the Lorentz force as shown in FIG. As indicated by the black arrow in the middle, it is driven in the −Y direction, and fine movement stage WFS2 is transferred (sliding) from relay stage DRST to coarse movement stage WCS1.

  Further, main controller 20 holds fine movement stage WFS1 after accommodating the conveyance member body of conveyance member 48 in the space of relay stage DRST so that fine movement stage WFS1 is completely accommodated in the space of relay stage DRST. The moving member is moved in the + Y direction on the transport member body (see the white arrow in FIG. 21C).

  Next, main controller 20 moves coarse movement stage WCS1 holding fine movement stage WFS2 in the -Y direction, so that liquid immersion liquid is held from blade BL to fine movement stage WFS2 with tip lens 191. Pass the space. The transfer of the immersion space (liquid Lq) is performed in the reverse procedure to the transfer of the immersion space from fine movement stage WFS1 to blade BL described above.

  After delivery of the immersion space, main controller 20 retracts auxiliary stage AST (blade BL) to a position away from measurement arm 71A, for example, the aforementioned standby position (see FIG. 13).

  Prior to the start of exposure, main controller 20 uses the pair of reticle alignment systems RA1 and RA2 described above and the pair of first reference marks on measurement plate 86 of fine movement stage WFS and the like to perform normal scanning and scanning. The reticle alignment is performed by the same procedure as that of the stepper (for example, the procedure disclosed in US Pat. No. 5,646,413). FIG. 21D shows fine movement stage WFS2 during reticle alignment together with coarse movement stage WCS1 that holds the fine movement stage WFS2. Then, main controller 20 uses a step-and-scan method based on the result of reticle alignment and the result of wafer alignment (alignment coordinates with reference to the second reference mark of each shot area on wafer W). An exposure operation is performed to transfer the pattern of the reticle R to a plurality of shot areas on the wafer W. As is apparent from FIGS. 21 (E) and 21 (F), this exposure is performed after reticle alignment, by returning fine movement stage WFS2 to one end -Y side, and from the + Y side shot area on wafer W to the -Y side. This is performed in the order of the shot areas.

  In parallel with the above-mentioned immersion space delivery, reticle alignment, and exposure, the following operations are performed.

  That is, main controller 20 moves transport member 48 holding fine movement stage WFS1 into the space of coarse movement stage WCS2, as shown in FIG. At this time, main controller 20 moves the moving member holding fine movement stage WFS1 in the + Y direction on the conveying member main body along with the movement of conveying member 48.

  Next, main controller 20 releases the locking mechanism (not shown), and separates coarse movement stage WCS2 into first part WCS2a and second part WCS2b, and also with a white arrow in FIG. As shown in the drawing, the conveying member 48 holding the fine movement stage WFS1 is driven upward, and the fine movement stage WFS1 and the pair of movable parts included in the fine movement stage WFS1 are paired with the pair of stator parts of the coarse movement stage WCS2. It is positioned at a height at which it can be engaged.

  Then, main controller 20 combines first portion WCS2a and second portion WCS2b of coarse movement stage WCS2. Thereby, fine movement stage WFS1 holding exposed wafer W is supported by coarse movement stage WCS2. Therefore, main controller 20 locks a lock mechanism (not shown).

  Next, main controller 20 drives coarse movement stage WCS2 supporting fine movement stage WFS1 in the + Y direction as indicated by the white arrow in FIG.

  Thereafter, on the fine movement stage WFS1, the main controller 20 performs wafer replacement, second reference mark detection, wafer alignment, and the like in the same procedure as described above.

  Then, main controller 20 converts the array coordinates of each shot area on wafer W obtained as a result of the wafer alignment into array coordinates based on the second reference mark. Also in this case, the position of fine movement stage WFS1 during alignment is measured using fine movement stage position measurement system 70B.

  In this way, the wafer alignment for the wafer W held on the fine movement stage WFS1 is completed. At this time, however, the exposure of the wafer W held on the fine movement stage WFS2 is still continued in the exposure station 200.

  Then, main controller 20 transfers fine movement stage WFS1 to relay stage DRST in the same manner as described above. Main controller 20 waits for the exposure of wafer W on fine movement stage WFS2 to end in a state where relay stage DRST and coarse movement stage WCS2 are in the standby position described above.

  Thereafter, the same processing is repeatedly performed using the fine movement stages WFS1 and WFS2 alternately, and the exposure processing for a plurality of wafers W is continuously performed.

By the way, in the exposure apparatus 100, during the series of parallel processing operations described above or at an appropriate time, the main controller 20 uses various measuring instruments (such as the aerial image measuring apparatus 61 described above) provided on the auxiliary stage AST. Thus, the optical characteristics of the projection optical system PL are measured. At this time, as shown in, for example, FIGS. 12A and 12C, the main controller 20 measures the measurement arm drive system 59 so that the support portion 60b of the auxiliary stage AST does not interfere with the measurement arm 71A. The measurement arm stage 72A is driven via (see FIG. 3), and the measurement arm 71A is retracted in the + X direction from the position on the optical axis AX of the projection optical system PL, and then various measurements provided on the auxiliary stage AST. Measure using the instrument. During this measurement, when it is necessary to control the position of the fine movement stage WFS1 or WFS2 supported by coarse movement stage WCS1, the main controller 20, fine movement stage position measurement system 70A, and measurement of the measuring arm position measurement 72A ₀ Based on the result, the position of fine movement stage WFS1 or WFS2 is controlled with reference to the optical axis of projection optical system PL.

As described above in detail, according to the exposure apparatus 100 of the present embodiment, when exposure is performed on the wafer W on the fine movement stage WFS1 (or WFS2), the head of the fine movement stage position measurement system 70A is provided. measurement arm 71A is, main controller 20 obtains the relative position information with respect to the optical axis AX of the projection optical system PL of the measurement arm 71A (measured) measured based on the measurement result of the measuring arm position measurement system 72A ₀ arm By controlling the drive system 59, it is positioned at the reference position, and this positioning state is maintained. Then, the position of fine movement stage WFS1 (or WFS2) is determined by main controller 20 by the head (X head) on measurement arm 71A positioned in the space surrounded by fine movement stage WFS1 (or WFS2) and coarse movement stage WCS1. 77x, Y heads 77ya, 77yb) irradiate the grating RG of fine movement stage WFS1 (or WFS2) with a measurement beam, and receive the return beam from grating RG, thereby allowing the fine movement stage WFS1 (WFS2) in the XY plane. It is measured using a fine movement stage position measurement system 70A that measures position information, and is controlled based on the measurement result. Therefore, according to the exposure apparatus 100 of the present embodiment, the position information of the wafer W held on the fine movement stage WFS1 (or WFS2), that is, the fine movement stage WFS1 (or WFS2) is accurately determined with reference to the optical axis AX of the projection optical system PL. Measurement can be performed well, and fine movement stage WFS1 (or WFS2) can be driven with high accuracy based on the measurement result. Thereby, the pattern of the reticle R can be accurately transferred onto the wafer W.

Of course, the main controller 20, without positioning the measuring arm 71A to the reference position, and the measurement result of the measuring arm position measuring system 72A _0, based on the measurement result of the fine movement stage position measurement system 70A, coarse movement stage WCS1 The fine movement stage WFS1 (WFS2) supported by the motor may be driven. Also in this case, the position information of the wafer W held on the fine movement stage WFS1 (or WFS2), that is, the fine movement stage WFS1 (or WFS2) can be accurately measured with reference to the optical axis AX of the projection optical system PL. Based on the measurement result, fine movement stage WFS1 (or WFS2) can be driven with high accuracy.

  Further, according to the exposure apparatus 100 of the present embodiment, since the measurement arm 71A is supported by the measurement arm stage 72A that can move in the XY plane, the main control device 20 moves the measurement arm 71A as necessary. The auxiliary stage AST is retracted from the optical axis AX of the projection optical system PL, the auxiliary stage AST is positioned on the optical axis AX, and various measuring instruments (such as the aerial image measuring device 61) on the auxiliary stage AST are used. Optical characteristics can be measured without hindrance.

In the above embodiment, the measurement arm 71A is supported on the measurement arm stage 72A and driven on the base board 12. However, the configuration is not limited thereto, and the measurement arm 71A is connected to the main arm similarly to the measurement arm 71B. The frame BD may be movably supported (in a cantilever state). In this case, a drive support device having the same configuration as that of the secondary ant alignment systems AL2 _{1 to} AL2 ₄ described above may be employed, and the measurement arm 71A may be supported by the main frame BD using the device.

  The configuration of the above-described aerial image measurement device 61 and the like is an example, and various measuring instruments applicable to the exposure apparatus of the present invention are not limited thereto. For example, various measuring instruments in which a part is provided in fine movement stage WFS1 (or WFS2) and the remaining part is provided in auxiliary stage AST may be employed.

  FIG. 22 shows an example of the aerial image measuring apparatus having such a configuration. In fine movement stage WFS1 shown in FIG. 22, a pair of aerial image measurement slit patterns SL is formed on measurement plate 86 as a pair of first reference marks. As each aerial image measurement slit pattern SL, a slit pattern similar to the X slit and Y slit formed in the previous slit plate 61a can be used.

  Inside fine movement stage WFS1, a pair of casings 63a are housed in a state of penetrating main body 81 in the Z-axis direction below each of the pair of aerial image measurement slit patterns SL. An optical system including an objective lens, a relay lens, and the like is disposed inside each housing 63a. Hereinafter, for the sake of convenience, the optical system inside the housing 63a is referred to as a light transmission system 63a using the same reference numerals as those of the housing 63a.

On the other hand, the supporting portion 60b of the auxiliary stage AST, the protruding portion 60b ₀ provided at an end surface of the + Y side. Inside the projecting portion 60b _0, a pair of L-shaped casing 63b facing the pair of light-transmitting systems 63a described above is embedded. An optical system such as a relay lens and a mirror and a light receiving element such as a photomultiplier tube are disposed inside each housing 63b. Hereinafter, for the sake of convenience, the optical system and the light receiving element inside the housing 63b will be referred to as the light receiving system 63b using the same reference numerals as the housing 63b. The above-described measurement plate 86 (aerial image measurement slit pattern SL), the light transmission system 63a, and the light reception system 63b are the same as those disclosed in the specification of US Patent Application Publication No. 2002/0041377. A device 63 is configured.

  According to the aerial image measurement device 63, when the illumination light IL passes through the aerial image measurement slit pattern SL from the upper side (+ Z side) to the lower side (−Z side), it passes through the light transmission system 63a and −Z of the fine movement stage WFS1. Inject to the side. The illumination light IL enters the light receiving system 63b from above (+ Z side), and is received by the light receiving element therein.

  Note that the measurement arm 71 </ b> A is retracted from the optical axis AX of the projection optical system PL by the main controller 20 also when measurement is performed by the aerial image measurement device 63.

  In the above embodiment, the case where fine movement stage position measurement systems 70A and 70B are provided with measurement arms 71A and 71B that are formed entirely of glass and capable of allowing light to travel inside is described. It is not limited. For example, in the measurement arm, at least a portion where each of the laser beams travels is formed by a solid member that can transmit light, and the other portion may be a member that does not transmit light, for example. It may be a hollow structure. For example, as a measurement arm, as long as a measurement beam can be irradiated from a portion facing the grating, for example, a light source, a photodetector, or the like may be built in the distal end portion of the measurement arm. In this case, it is not necessary to advance the measurement beam of the encoder inside the measurement arm. Furthermore, the shape of the measuring arm is not particularly limited. Further, fine movement stage position measurement systems 70A and 70B do not necessarily have a measurement arm, and are arranged in the space of coarse movement stages WCS1 and WCS2 so as to face grating RG, and at least one grating RG is provided. If the position information of at least the fine movement stage WFS1 (or WFS2) in the XY plane can be measured based on the output of the head It ’s enough.

  In the above-described embodiment, the encoder system 73 is illustrated as having an X head and a pair of Y heads. However, the present invention is not limited to this. One or two heads (2D heads) may be provided. When two 2D heads are provided, their detection points may be two points separated from each other by the same distance in the X-axis direction with the exposure position as the center on the grating.

  In the above embodiment, the grating is arranged on the upper surface of the fine movement stage, that is, the surface facing the wafer. However, the present invention is not limited to this, and the grating may be formed on a wafer holder that holds the wafer. . In this case, even if the wafer holder expands during exposure or the mounting position with respect to the fine movement stage shifts, the position of the wafer holder (wafer) can be measured following this. The grating may be arranged on the lower surface of the fine movement stage. In this case, since the measurement beam irradiated from the encoder head does not travel inside the fine movement stage, the grating is a solid member capable of transmitting light through the fine movement stage. Therefore, it is possible to reduce the weight of the fine movement stage by making the fine movement stage into a hollow structure and arranging piping, wiring, and the like inside.

  In the above embodiment, the case where the present invention is applied to the scanning stepper has been described. However, the present invention is not limited to this, and the present invention may be applied to a stationary exposure apparatus such as a stepper. Even if it is a stepper, the position measurement error caused by air fluctuation is different from the case where the position of this stage is measured using an interferometer by measuring the position of the stage on which the object to be exposed is mounted with an encoder. Generation can be made almost zero, and the stage can be positioned with high accuracy based on the measurement value of the encoder. As a result, the reticle pattern can be transferred onto the object with high accuracy. . The present invention can also be applied to a step-and-stitch reduction projection exposure apparatus that synthesizes a shot area and a shot area. In addition, the present invention is not limited to an immersion type exposure apparatus, but can also be applied to a normal dry exposure type exposure apparatus that does not use a liquid.

  Further, the projection optical system in the exposure apparatus of the above embodiment may be not only a reduction system but also any of the same magnification and enlargement systems, and the projection optical system PL may be any of a reflection system and a catadioptric system as well as a refraction system. The projected image may be an inverted image or an erect image.

The illumination light IL is not limited to ArF excimer laser light (wavelength 193 nm), but may be ultraviolet light such as KrF excimer laser light (wavelength 248 nm) or vacuum ultraviolet light such as F ₂ laser light (wavelength 157 nm). good. For example, as disclosed in US Pat. No. 7,023,610, single-wavelength laser light in the infrared region or visible region oscillated from a DFB semiconductor laser or fiber laser is used as vacuum ultraviolet light, for example, erbium. A harmonic which is amplified by a fiber amplifier doped with (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.

  In the above embodiment, it is needless to say that the illumination light IL of the exposure apparatus is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may be used. For example, the present invention can be applied to an EUV exposure apparatus that uses EUV (Extreme Ultraviolet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm). In addition, the present invention can be applied to an exposure apparatus using a charged particle beam such as an electron beam or an ion beam.

  In the above-described embodiment, a light transmission mask (reticle) in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. Instead of this reticle, For example, as disclosed in US Pat. No. 6,778,257, an electronic mask (variable shaping mask, which forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed, as disclosed in US Pat. No. 6,778,257. For example, a non-light emitting image display element (spatial light modulator) including a DMD (Digital Micro-mirror Device) may be used. When such a variable shaping mask is used, the stage on which the wafer or glass plate is mounted is scanned with respect to the variable shaping mask, and the position of this stage is measured using an encoder system and a laser interferometer system. Thus, an effect equivalent to that of the above embodiment can be obtained.

  Further, as disclosed in, for example, International Publication No. 2001/035168, an exposure apparatus (lithography system) that forms a line-and-space pattern on a wafer W by forming interference fringes on the wafer W. The present invention can also be applied.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, two reticle patterns are synthesized on a wafer via a projection optical system, and 1 on the wafer by one scan exposure. The present invention can also be applied to an exposure apparatus that double exposes two shot areas almost simultaneously.

  In the above embodiment, the object on which the pattern is to be formed (the object to be exposed to which the energy beam is irradiated) is not limited to the wafer, but may be another object such as a glass plate, a ceramic substrate, a film member, or a mask blank. good.

  The use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, but for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, an organic EL, a thin film magnetic head, an image sensor (CCD, etc.), micromachines, DNA chips and the like can also be widely applied to exposure apparatuses. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern.

  An electronic device such as a semiconductor element includes a step of designing a function / performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and the exposure apparatus (pattern forming apparatus) of the above-described embodiment. And a lithography step for transferring the mask (reticle) pattern to the wafer by the exposure method, a development step for developing the exposed wafer, and an etching step for removing the exposed member other than the portion where the resist remains by etching, It is manufactured through a resist removal step for removing a resist that has become unnecessary after etching, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like. In this case, in the lithography step, the exposure method described above is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the wafer. Therefore, a highly integrated device can be manufactured with high productivity.

  As described above, the exposure apparatus of the present invention is suitable for irradiating an energy beam on an object to form a pattern on the object. The device manufacturing method of the present invention is suitable for manufacturing an electronic device.

DESCRIPTION OF SYMBOLS 5 ... Liquid supply apparatus, 8 ... Local immersion apparatus, 20 ... Main control apparatus, 59 ... Measurement arm drive system, 61 ... Aerial image measurement apparatus, 70A ... Fine movement stage position measurement system, 71A ... Measurement arm, 72A ... Measurement arm Stage, 72A ₀ ... measurement arm position measurement system, 77x ... X head, 77ya, 77yb ... Y head, 100 ... exposure apparatus, BD ... main frame, PL ... projection optical system, IL ... illumination light, WCS1 ... coarse motion stage, W: Wafer, WFS1, WFS2: Fine movement stage, RG: Grating, AST: Auxiliary stage, Lq: Liquid.

Claims (18)

An exposure apparatus that exposes an object with energy through an optical system supported by a support member,
A first moving body having a space inside and movable along at least a two-dimensional plane;
A holding member that is movably supported by the first moving body, holds the object, and is movable in a plane parallel to at least the two-dimensional plane;
An arm member extending in a direction parallel to a first axis parallel to the two-dimensional plane and allowed to move relative to the support member in the two-dimensional plane;
The arm member is provided with at least a part, irradiates a measurement beam to a measurement surface arranged on one surface substantially parallel to the two-dimensional plane of the holding member, and receives a beam from the measurement surface. A first measurement system that includes a measurement member and obtains positional information of at least the two-dimensional plane of the holding member using an output of the first measurement member;
A second measurement system for obtaining position information of the arm member;
An exposure apparatus comprising:   The exposure apparatus according to claim 1, wherein the second measurement system obtains positional information relative to the support member of the arm member.   The apparatus according to claim 1, further comprising: a second moving body that has at least a part of a second measurement member that receives the energy beam and measures an optical characteristic of the optical system, and moves along the two-dimensional plane. The exposure apparatus described.   The exposure apparatus according to claim 3, further comprising a drive system that drives the arm member in the two-dimensional plane.   5. The drive system retracts the arm member from the optical axis when the second moving body moves on the optical axis of the optical system for measuring optical characteristics of the optical system. The exposure apparatus described.   The exposure apparatus according to claim 4, wherein the drive system further includes a third moving body that supports the arm member and moves in the two-dimensional plane. The arm member is supported by the support member so as to be relatively movable,
The exposure apparatus according to claim 4, wherein the drive system drives the arm member relative to the support member. At least a part of the first measurement member is provided at one end in the longitudinal direction of the arm member,
The exposure apparatus according to claim 7, wherein the other end of the arm member in the longitudinal direction is supported by the support member. The apparatus further includes a liquid supply device for supplying a liquid between the exit surface of the energy beam of the optical system and a member movable in a plane parallel to the two-dimensional plane disposed to face the exit surface. ,
The exposure apparatus according to claim 3, wherein the object held by the holding member by the energy beam is exposed through the optical system and the liquid.   The exposure apparatus according to claim 9, wherein at least one of the holding member and the second moving body is disposed to face the emission surface.   The exposure apparatus according to claim 10, wherein the holding member and the second moving body are adjacent to each other and form the same surface.   The exposure apparatus according to claim 11, wherein the liquid is transferred between the holding member and the second moving body. A part of the second measuring member is provided on the second moving body,
When the holding member is positioned on the optical axis of the optical system, the second measurement object is optically connected to a part of the second measuring member by the proximity of the second moving body to the holding member. The exposure apparatus according to any one of claims 3 to 12, wherein a remaining part of the second measurement member constituting the member is provided. When the arm member is positioned at its reference position,
The exposure apparatus according to claim 1, wherein the first measurement system measures the position of the holding member with a point on the optical axis of the optical system as a measurement center.   The exposure apparatus according to claim 1, wherein the measurement surface is provided on a back surface side of a surface on which the object of the holding member is placed. A grating is formed on the measurement surface,
The exposure apparatus according to claim 1, wherein the first measurement member receives a diffracted beam from the grating.   The control system for driving the holding member supported by the first moving body based on the measurement result of the first position measurement system and the measurement result of the second position measurement system. The exposure apparatus according to any one of the above. Exposing an object with the exposure apparatus according to claim 1;
Developing the exposed object. A device manufacturing method comprising:

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