CN106933055A - A kind of alignment device and alignment methods - Google Patents
A kind of alignment device and alignment methods Download PDFInfo
- Publication number
- CN106933055A CN106933055A CN201511031863.6A CN201511031863A CN106933055A CN 106933055 A CN106933055 A CN 106933055A CN 201511031863 A CN201511031863 A CN 201511031863A CN 106933055 A CN106933055 A CN 106933055A
- Authority
- CN
- China
- Prior art keywords
- light
- alignment
- grating
- alignment mark
- diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention was used including two groups of cycles nuance and grating placed side by side is used as alignment mark, the optical projection system that optical magnification is -1 times is set on alignment mark, when illumination light is by exposing on one group of grating and with θ1Angle of emergence diffraction, diffraction light is reflected back on another group of grating again by being overturn with 180 ° of angle after optical projection system, because the cycle of two groups of gratings is similar, therefore with the output angle θ of very little from another group of grating2(sinθ2=sin θ1-sinθ3, θ3It is the angle of emergence of the light that diffraction after normal incidence to another group of grating goes out, and θ1With θ3Difference very little) light that goes out of diffraction is on planar array detector according to can form Moire fringe, and transmit to processing unit, the offset distance of alignment mark is calculated, the silicon chip on travelling workpiece platform is so as to mobile alignment mark, until the offset distance of alignment mark is 0, then alignment is completed.This method can self-reference form Moire fringe, without using reference grating, it is to avoid the drift error that reference grating is brought, improve alignment precision.
Description
Technical field
The present invention relates to semiconductor lithography field, more particularly to a kind of alignment device and alignment methods.
Background technology
In semiconducter IC ic manufacturing process, a complete chip is generally needed by multiple photolithographic exposure
Can complete.In addition to first time photoetching, the photoetching of remaining level before exposure will be by the figure of the level and with front layer
The secondary figure for leaving that exposes is accurately positioned, and so just can guarantee that between each layer pattern there is correct relative position, that is, cover
Carve precision.Under normal circumstances, alignment precision be the 1/3~1/5 of litho machine resolution ratio index, litho machine for 100 nanometers and
Speech, alignment precision index request is less than 35nm.When characteristic size CD requirement more hours, requirement to alignment precision and thus produce
The requirement of raw alignment precision becomes more strict, CD sizes requirement 10nm or the smaller alignment precision of such as 90nm.
In projection lithography field, silicon chip alignment is more by the way of off-axis alignment, and silicon chip leads to the position relationship of mask
The alignment mark crossed on work stage datum plate refers to indirect gain as transition, i.e., first establish silicon chip and mask respectively in work stage
Position under coordinate system, then obtains relative position relation between silicon chip, mask indirectly.Wherein, silicon chip is in worktable coordinate system
Under position establish, i.e., silicon chip alignment, it is increasingly complex, it is necessary to be set up by reference to marking.Therefore, by silicon chip alignment mark
(and work stage alignment mark) carries out being directed at the key as problem with reference marker.
Fig. 1 schematically illustrates the structure of the projection lithography equipment, and silicon chip alignment system is residing wherein
Position.The lithographic equipment includes:Illuminator 01 for providing exposing light beam;Mask stage 03 for supporting mask plate 02,
There are mask pattern and the mark for being aligned on mask plate 02;For the mask pattern on mask plate 02 to be projected into silicon chip 06
Optical projection system 04;Work stage 07 for supporting silicon chip 06, there is the datum plate 08 for being carved with reference mark, silicon chip in work stage 07
There are the periodic markings for being aligned on 06;For the off-axis alignment system 05 that mask plate 02 and silicon chip 06 are aligned.Mask stage 03
All driven by high accuracy servo system with work stage 07.
Disclose in the prior art and a kind of can be used for the alignment device of projection aligner.Fig. 2 is refer to, with silicon chip face week
Phase is respectively P3And P4Grating marker as a example by, the forming process of alignment Moire fringe used is:Light source normal incidence is to lower floor's grating
P3On, (0 order diffraction light refers to be incident to after grating with the diffraction light of 0 ° of angle of emergence outgoing ,+1, -1 grade to+1, -1 order diffraction light
Diffraction light refers to the diffraction light of the minimum angle of emergence outgoing that the angle of emergence is not 0 deg) with the angle of emergence as θ4(Work as illumination
During including multiple wavelength, θ4It is an angular range), it is blocked into 4,0 grade of light of optical projection system, the diffraction light of level high can not
Into optical projection system 4;By+1, -1 order diffraction light of optical projection system 4 with θ4’(M is optical projection system 4
Enlargement ratio) incidence angle be radiated reference grating P4' on, P4' and P3× M is slightly different, and then+1 grade-the 1 of incident light grade is spread out
Light is penetrated, -1 grade of+1 order diffraction light of incident light can be with an angle, θ for very little5(When illumination is including more
During individual wavelength, θ5It is an angular range) outgoing, outgoing beam is produced in confluce interferes, and forms Moire fringe.
Two gratings positioned at the grating 3 of lower floor are arranged side by side, and screen periods are respectively P3And P4, two of reference grating 5
Grating is also arranged side by side, and screen periods are respectively P3' and P4', the grating 3 respectively positioned at lower floor of reference grating 5 is through optical projection system 4
Image space on.As described above, they are by producing two groups of cycle identical interference fringes after diffraction twice, and up and down
The relative movement of layer grating 3 can cause interference fringe, and opposite direction is moved each other, and relative phase between moving displacement and interference fringe
Position change relation be:
Wherein,It is two groups of position differences of striped,WithThe respectively two groups position phases of striped,
In fig. 2, this two groups of interference fringes are all imaged onto on detector 9, and are transmitted into processing system 10, in processing system
In system 10, the phase information between various signal processing algorithms can be applied to extract two groups of interference fringes, to determine levels light
The alignment position of grid.The information of alignment position will be transferred to the control system being connected with processing system 10 and be processed, and control
System processed is connected with work stage simultaneously, drives work stage to move to correct position during for exposing.
This technology is increased to Barebone by increasing an optical projection system between silicon chip alignment mark and reference marker
Working distance, makes it be more applicable for modern projection litho machine.But such scheme needs to refer to grating, limiting silicon chip mark can
The cycle of use and direction, and the drift of reference grating etc. is also introduced into alignment error, reduces alignment precision, therefore have
Necessity invents a kind of alignment device and method without using reference grating.
The content of the invention
To solve the above problems, the present invention proposes a kind of alignment device and alignment methods, by using with different weeks
The grating of phase is used as alignment mark so that forms Moire fringe without necessarily referring to self-reference by grating, and can accurately calculate right
The offset distance of fiducial mark note so that alignment mark can accurately be aligned, and improve alignment precision.
To reach above-mentioned purpose, the present invention provides a kind of alignment device, successively including planar array detector, imaging lens, point
Light prism, optical projection system, alignment mark, the Amici prism are also connected with lighting device light path, and the alignment mark is located at silicon
On piece or datum plate, the alignment mark includes two groups of cycle discrepant gratings placed side by side, and the lighting device is carried
By reaching the alignment mark after the Amici prism, the optical projection system, light passes through the illumination light of confession after producing diffraction
Moire fringe image is formed after the optical projection system, the Amici prism, the imaging lens on the planar array detector.
Preferably, the grating is one-dimensional linear grating.
Preferably, the optical magnification of the optical projection system is -1 times, the optical projection system includes speculum and thing
Mirror, the speculum is annular, center drilling printing opacity, and on the back focal plane of the object lens.
Preferably, the detector is charge coupled cell or complementary metal oxide semiconductors (CMOS).
Preferably, the lighting device provides the illumination light with collimated ray, the illumination light wavelength 450nm~
750nm, or the illumination light includes the light of multiple wavelength.
Preferably, also including light source strobe unit in the lighting device, the light source of certain wavelength is selected to be illuminated.
Preferably, also including processing unit and work stage, the silicon chip or datum plate are positioned in the work stage,
The processing unit is connected with the planar array detector, the work stage circuit.
Preferably, also setting up aperture diaphragm between the optical projection system and the alignment mark, the aperture diaphragm hides
Keep off the reflected light that the angle of diffraction is 0 ° of diffraction light or angle of reflection is 0 °.
The present invention also provides a kind of alignment methods using alignment device as described above, comprises the following steps:
Step one:Lighting device is opened, illumination light sequentially passes through Amici prism, optical projection system and reaches first on alignment mark
On group grating;
Step 2:Enter the optical projection system, the projection system from first group of diffraction light of diffraction on the alignment mark
System converges on the alignment mark on second group of grating light line reflection;
Step 3:The optical projection system, described is sequentially passed through from second group of diffraction light of diffraction on second group of grating
Moire fringe image is formed after Amici prism and imaging lens on planar array detector;
Step 4:The electric signal of the Moire fringe image that processing unit is transmitted according to the planar array detector, calculates and works as
The spacing of position and normal place where the preceding alignment mark, and send move to work stage according to the spacing,
Until the position and normal place spacing where the alignment mark are 0, alignment is completed.
Preferably,+1 grade described in step 2 in first group of diffraction light is θ with the angle of emergence of -1 order diffraction light1, thenWherein λ is the wavelength of the illumination light, P1It is first group of cycle of grating described in step one.
Preferably, angle of light on second group of grating of the alignment mark is converged to described in step 2 for 0 ° or
θ1, when incidence angle is 0 ° ,+1 grade in second group of diffraction light is θ with the angle of emergence of -1 grade of diffraction light3,Wherein λ is the wavelength of the illumination light, P2It is the cycle of second group of grating;When incidence angle is θ1When, institute
The angle of emergence for stating the diffraction light of+1 grade and -1 grade in second group of diffraction light is θ2, whereinThat is sin θ2=
sinθ1-sinθ3。
Preferably, the cycle of Moire fringe image described in step 3
Preferably, when the alignment mark occurs transverse shifting, two groups of interference fringes are each other in Moire fringe image
Opposite direction is moved, and the relation between moving displacement Δ s and interference fringe between relative phase change isWhereinIt is two groups of phase differences of interference fringe,WithRespectively two groups interference
The phase of striped.
Preferably, first group of grating and second group of screen periods are all higher than 1 μm.
Compared with prior art, the beneficial effects of the invention are as follows:The present invention using include two groups of cycles have nuance and
Grating placed side by side sets the optical projection system that optical magnification is -1 times as alignment mark on alignment mark, works as photograph
Mingguang City after Amici prism, the centre bore of Perimeter Truss Reflector and object lens by exposing on one group of grating and with θ1The angle of emergence spread out
Penetrate, diffraction light is reflected back on another group of grating again by being overturn with 180 ° of angle after object lens and Perimeter Truss Reflector, and incidence angle is
θ1, because the cycle of two groups of gratings is similar, therefore with the output angle θ of very little from another group of grating2(sinθ2=sin θ1-sin
θ3, θ3It is the angle of emergence of the light that diffraction after normal incidence to another group of grating goes out, and θ1With θ3Difference very little) light that goes out of diffraction
Moire fringe is formed on planar array detector after sequentially passing through object lens, the centre bore of Perimeter Truss Reflector and imaging lens, then
The picture signal of Moire fringe is transmitted to processing unit, the offset distance of alignment mark is calculated, then by controlling workpiece
The movement of platform, the silicon chip on travelling workpiece platform until the offset distance of alignment mark is 0, is then aligned so as to mobile alignment mark
Complete.This method can self-reference form Moire fringe, without using reference grating, it is to avoid the drift that reference grating is brought is missed
Difference, improves alignment precision.
Brief description of the drawings
Fig. 1 is the structural representation of projection lithography equipment in the prior art;
Fig. 2 is alignment device structural representation in the prior art;
Fig. 3 is alignment device structural representation in the embodiment of the present invention one;
Fig. 4 is Moire fringe image forming apparatus structural representation in the embodiment of the present invention one;
Fig. 5 is the top view of speculum in Fig. 4;
Fig. 6 is defocus impact analysis schematic diagram in the embodiment of the present invention one;
Fig. 7 is obliquity effects analysis schematic diagram in the embodiment of the present invention one.
In Fig. 1:01- illuminators, 02- mask plates, 03- mask stages, 04- optical projection systems, 05- off-axis alignments system, 06-
Silicon chip, 07- work stages, 08- datum plates;
In Fig. 2:1- work stages, 2- silicon chips, 3- gratings, 4- optical projection systems, 5- reference gratings, 6- illuminators, 7- detections
Device camera lens, 8- beam splitting systems, 9- detectors, 10- processing systems;
Present invention diagram:100- lighting devices, 101- illumination lights, 200- optical projection systems, the diffraction lights of 201- first, 202-
Two diffraction lights, 210- object lens, 220- speculums, 300- silicon chips, the reflected lights of 301- first, the reflected lights of 302- second, 310- alignments
Mark, the gratings of 311- first, the gratings of 312- second, 320- ideal focal plane, 330- ideal images position, 400- imaging lens,
The diffraction lights of 401- the 3rd, the diffraction lights of 402- the 4th, 500- planar array detectors, 600- Amici prisms, 700- processing units, 800- works
Part platform.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Embodiment one
Refer to Fig. 3, the alignment device that the present invention is provided, including planar array detector 500, imaging lens 400, Amici prism
600th, optical projection system 200, alignment mark 310, the Amici prism 600 are also connected with the light path of lighting device 100, described to fiducial mark
Note 310 is located on silicon chip 300, and the alignment mark 310 includes two groups of cycle discrepant gratings, respectively the first grating 311
With the second grating 312, the illumination light that the lighting device 100 is provided is by the Amici prism 600, the optical projection system 200
After reach the alignment mark 310, and diffraction by the optical projection system 200, the Amici prism 600, the imaging lens
Moire fringe image is formed after 400 on the planar array detector 500.
Lighting device 100 provides collimated illumination light.Illumination light can be broadband light (such as 450~750nm), or
The light of multiple wavelength, such as wavelength are respectively λ1、λ2、λ3Laser.It is preferred that light source strobe unit can also be included, one is may be selected
Standing wave light source lighting long.The different process of silicon chip 300 layer, the light source of certain wavelength different to the diffraction efficiency of different wavelengths of light
As diffraction efficiency light source higher, i.e., be illuminated using diffraction efficiency light source higher, to improve the contrast of interference fringe image
Degree, reaches the purpose of enhancing Technological adaptability.
Amici prism 600, light beam of the diffraction from lighting device 100 makes its normal incidence (vertical incidence) arrive alignment mark
On 310, while the diffraction light by optical projection system 200 from the diffraction of alignment mark 310 can be transmitted.
The optical magnification of the optical projection system 200 is -1, and optical projection system 200 includes speculum 220 and object lens 210,
Fig. 5 is refer to, speculum 220 is annular, center drilling printing opacity, and on the back focal plane of object lens 210, object lens 210 are used for
Collect the light from diffraction on alignment mark 310.
Imaging lens 400 are used to for the light of the re-diffraction of low-angle to converge to the surface of planar array detector 500, form More
Stripe pattern.Re-diffraction light refers to reflect to project again by speculum 220 from after alignment mark 310 upper first time diffraction
On alignment mark 310, then second light of diffraction.
Planar array detector 500, usually CCD or CMOS, the light for collecting from optical grating diffraction forms interference fringe
The image of (being Moire fringe in the present embodiment).Planar array detector 500 is also connected with the circuit of processing unit 700, by interference fringe
Picture signal send processing unit 700 to, alignment mark is calculated according to the picture signal of interference fringe by processing unit 700
310 offset distance.
Alignment mark 310, the respectively mark with two rows difference screen periods, the first grating 311 and the second grating
312, the screen periods of two groups of gratings are slightly differed.Alignment mark 310 can be one-dimensional linear grating, or linear with fine structure
Grating, on labeled vector silicon chip 300, silicon chip 300 is positioned in work stage 800, and work stage 800 is electric with processing unit 700
Road connects, and processing unit 700 sends move after the offset distance for calculating alignment mark 310 to work stage 800, mobile
Silicon chip 300 is so as to drive alignment mark 310 to move, until alignment mark 310 is 0 with the offset distance of normal place.
Refer to Fig. 3 and Fig. 4, the present invention also provides a kind of alignment methods using alignment device described above, including with
Lower step:
Step one:Lighting device 100 is opened, illumination light 101 sequentially passes through Amici prism 600, the normal incidence of optical projection system 200
(vertical incidence) is reached on the first grating 311;
Step 2:Because the optical magnification of optical projection system 200 is -1, first gone out from diffraction on the first grating 311
Diffraction light 201 (+1 grade) and the second diffraction light 202 (- 1 grade) are with the first output angle θ1Outgoing to object lens 210 reach speculum 220
On, it is anti-by going successively to first reflected light 301 and second of the formation of object lens 210 after the annular reflection region reflection of speculum 220
Light 302 is penetrated, the first reflected light 301 and the second reflected light 302 reach the second grating 312, the first reflected light 301 and the second reflected light
302 incidence angles for reaching the second grating 312 are θ1, i.e., overturn 180 ° equivalent to by the first diffraction light 201 and the second diffraction light 202
After form the first reflected light 301 and the second reflected light 302 and then be incident to the second grating 312;
Step 3:Because the first grating 311 is similar with the screen periods of the second grating 312, therefore reach the second grating 312
On the first reflected light 301 and the second reflected light 302 by the diffraction of the second grating 312 with the second output angle θ2Outgoing (sin θ2
=sin θ1-sinθ3, the 3rd output angle θ3It is the angle of emergence of the light that diffraction after normal incidence to the second grating goes out, and θ1With θ3Difference
Very little) the 3rd diffraction light 401 (+1 grade) and the 4th diffraction light 402 (- 1 grade) are formed, due to the first output angle θ1With the 3rd outgoing
Angle θ3Difference very little, therefore the second output angle θ2It is the low-angle angle of emergence, by the central bore region of speculum 220 and can wears
Cross Amici prism 600 and imaging lens 400 form Moire fringe on planar array detector 500;
Step 4:The electric signal of the Moire fringe image that processing unit 700 is transmitted according to planar array detector 500, calculates
The spacing of position and normal place where current alignment mark 310, and mobile finger is sent to work stage 800 according to the spacing
Order, until the position and normal place spacing where alignment mark 310 are 0.
Similarly, if normal incidence to the second grating 312 light with the 3rd output angle θ3Diffraction is reached into object lens 210
On speculum 220, by speculum 220 reflection after again by object lens 210 reach the first grating 311 on, then with the angle of emergence as-
θ2Diffraction goes out, and equally passes sequentially through object lens 210, the central bore region of speculum 220, Amici prism 600 and imaging lens 400
Reach planar array detector 500 and form Moire fringe, it is identical with the Moire fringe formed in step 3 to form the Moire fringe cycle.
Wherein,Wherein λ is the wavelength of illumination light 101, P1It is the screen periods of the first grating 311.P2It is the screen periods of the second grating 312,sinθ2=sin θ1-sinθ3, formation is not
The cycle of your stripe pattern
It is preferred that when there is transverse shifting in alignment mark 310, two groups of interference fringes opposite direction fortune each other in Moire fringe
Dynamic, the relation between moving displacement Δ s and interference fringe between relative phase change isWhereinIt is two groups of phase differences of interference fringe,WithTwo groups of phases of interference fringe respectively in Moire fringe.
Due to can be applicable without reference grating, therefore grating of the screen periods more than 1um, improve to the expansible of Barebone
Property.When data processing is to two groups of phase differences of stripedWhen resolution ratio is identical, screen periods are smaller, and Δ s resolution ratio is higher, i.e.,
Alignment performance is higher.
Additionally, program structure is on substantially symmetrical about its central axis, therefore suitable for alignment mark at any angle, especially 45 °
With 135 ° of grating alignment marks in direction, alignment speed is improved, to adapt to the requirement of more high yield.
Fig. 6 is refer to, when alignment mark 310 occurs defocus (not inclining), A and B is on the alignment mark 310 of defocus
Two points, A ' and B ' is respectively the ideal image point of 2 points of A, B, and on ideal image position 330, and a, b are respectively A, B two
Position (2 points of A, B and the distance of ideal focal plane 320 etc. of point by actual projected after first time diffraction on alignment mark 310
In the distance of 2 points of a, b and preferable focal plane 320) because when the defocus distance of 2 points of A, B is for L, then 2 points of A, B into
Distance of the image position apart from ideal image position 330 is L × M, and wherein M is absolute for the optical magnification of optical projection system 200
Value, when actual optical magnification is timing, the direction of motion of imaging is consistent with the direction of motion of object, but when actual optics is put
When big multiplying power is to bear, then the direction of motion and the direction of motion of object being imaged are conversely, and the optical magnification of optical projection system 200
It is -1, therefore ideal image point A ', the B ' of 2 points of A, B and the right position of actual imaging point a, b and 2 points of A, B in figure
Right position is the imaging of symmetry conversely, be not subjected to displacement still.Therefore as can be seen from the figure between 2 points of a, b
Horizontal range it is equal with the horizontal range between A ', 2 points of B ', this just because of Projection System Optics enlargement ratio be -1 times,
Therefore 2 points of a, b is projected to from symmetry after 180 ° of the diffraction light upset of 2 outgoing of A, B, the level interval that A, B is not at 2 points
Have because becoming big after diffraction, reflection distortion or diminishing, therefore defocus has no effect on alignment result.
Fig. 7 is refer to, when the run-off the straight of alignment mark 310 (not defocus), A and B is inclined alignment mark 310
On two points, a, b be respectively A, B at 2 points by position of the actual projected on alignment mark 310 after first time diffraction, A, B,
Straight line where tetra- points of a, b intersects with preferable focal plane 320, it can be seen that also due to Projection System Optics amplify
Multiplying power is -1 times, therefore is also to be projected to 2 points of a, b after overturning 180 ° from the diffraction light of 2 outgoing of A, B, also in that being one
Symmetry imaging is planted, therefore horizontal range is still constant, and be not affected by distorting and becoming big or diminution, therefore nor affect on alignment
As a result.
As can be seen here, this alignment device and method can not only improve alignment precision, and whether alignment mark defocus or
Person incline, do not affect alignment result, further increase alignment device adaptability and can realize, operability.
Embodiment two
The present embodiment is to increase aperture light between Amici prism 600 and imaging lens 400 with the difference of embodiment one
Late (not shown), due to 0 order diffraction light (i.e. the angle of emergence is 0 ° of diffraction light) or normal incidence from diffraction on alignment mark 310
The formation of Moire fringe can be influenceed to the reflected light that the back reflection angle of alignment mark 310 is 0 ° so that Moire fringe image is thin out, clearly
It is clear degree decline, therefore set up between Amici prism 600 and imaging lens 400 aperture diaphragm can block 0 order diffraction light or
Angle of reflection is 0 ° of reflected light, so as to reduce the influence factor of Moire fringe formation so that Moire fringe becomes apparent from.
The present invention is described to above-described embodiment, but the present invention is not limited only to above-described embodiment, it is clear that this area
Technical staff can carry out various changes and modification to invention without departing from the spirit and scope of the present invention.So, if this hair
These bright modifications and modification belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to include
Including these changes and modification.
Claims (14)
1. a kind of alignment device, it is characterised in that successively including planar array detector, imaging lens, Amici prism, optical projection system,
Alignment mark, the Amici prism is also connected with lighting device light path, and the alignment mark is located on silicon chip or datum plate, institute
Stating alignment mark includes two groups of cycle discrepant gratings placed side by side, and the illumination light that the lighting device is provided is by described
Reach the alignment mark after Amici prism, the optical projection system, produce after diffraction light by the optical projection system, described point
Moire fringe image is formed after light prism, the imaging lens on the planar array detector.
2. alignment device as claimed in claim 1, it is characterised in that the grating is one-dimensional linear grating.
3. alignment device as claimed in claim 1, it is characterised in that the optical magnification of the optical projection system is -1 times,
The optical projection system includes speculum and object lens, and the speculum is annular, center drilling printing opacity, and positioned at the object lens
On back focal plane.
4. alignment device as claimed in claim 1, it is characterised in that the detector is charge coupled cell or complementary gold
Category oxide semiconductor.
5. alignment device as claimed in claim 1, it is characterised in that the lighting device provides the illumination with collimated ray
Light, the illumination light wavelength includes the light of multiple wavelength in 450nm~750nm, or the illumination light.
6. alignment device as claimed in claim 1, it is characterised in that also include light source strobe unit in the lighting device,
The light source of certain wavelength is selected to be illuminated.
7. alignment device as claimed in claim 1, it is characterised in that also including processing unit and work stage, the silicon chip or
Person's datum plate is positioned in the work stage, and the processing unit is connected with the planar array detector, the work stage circuit.
8. alignment device as claimed in claim 1, it is characterised in that also set between the optical projection system and the alignment mark
Aperture diaphragm is put, the aperture diaphragm blocks the diffraction light that the angle of diffraction is 0 ° or the reflected light that angle of reflection is 0 °.
9. alignment methods of a kind of alignment device using as described in claim 1~8 any one, it is characterised in that including
Following steps:
Step one:Lighting device is opened, illumination light sequentially passes through Amici prism, optical projection system and reaches first group of light on alignment mark
On grid;
Step 2:Enter the optical projection system from first group of diffraction light of diffraction on the alignment mark, the optical projection system will
Light line reflection is converged on the alignment mark on second group of grating;
Step 3:The optical projection system, the light splitting are sequentially passed through from second group of diffraction light of diffraction on second group of grating
Moire fringe image is formed after prism and imaging lens on planar array detector;
Step 4:The electric signal of the Moire fringe image that processing unit is transmitted according to the planar array detector, calculates current institute
The spacing of position and normal place where stating alignment mark, and send move to work stage according to the spacing, until
Position and normal place spacing where the alignment mark are 0, and alignment is completed.
10. alignment methods as described in claim 9, it is characterised in that described in step 2 in first group of diffraction light+1
The angle of emergence of level and -1 order diffraction light is θ1, thenWherein λ is the wavelength of the illumination light, P1It is institute in step one
State first group of cycle of grating.
11. alignment methods as described in claim 10, it is characterised in that the alignment mark is converged to described in step 2
Angle of light on second group of grating is 0 ° or θ1, when incidence angle is 0 ° ,+1 grade and -1 in second group of diffraction light
The angle of emergence of the diffraction light of level is θ3,Wherein λ is the wavelength of the illumination light, P2It is second group of grating
Cycle;When incidence angle is θ1When ,+1 grade in second group of diffraction light is θ with the angle of emergence of -1 grade of diffraction light2, whereinThat is sin θ2=sin θ1-sinθ3。
12. alignment methods as described in claim 11, it is characterised in that the cycle of Moire fringe image described in step 3
13. alignment methods as described in claim 11, it is characterised in that when the alignment mark occurs transverse shifting,
Two groups of interference fringe opposite direction motions each other in Moire fringe image, relative phase becomes between moving displacement Δ s and interference fringe
Relation between change isWhereinIt is two groups of phase differences of interference fringe,With
The respectively two groups phases of interference fringe.
14. alignment methods as described in claim 9, it is characterised in that first group of grating and second group of grating
Cycle is all higher than 1 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511031863.6A CN106933055B (en) | 2015-12-31 | 2015-12-31 | A kind of alignment device and alignment methods |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511031863.6A CN106933055B (en) | 2015-12-31 | 2015-12-31 | A kind of alignment device and alignment methods |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106933055A true CN106933055A (en) | 2017-07-07 |
CN106933055B CN106933055B (en) | 2019-04-12 |
Family
ID=59443806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201511031863.6A Active CN106933055B (en) | 2015-12-31 | 2015-12-31 | A kind of alignment device and alignment methods |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106933055B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109581710A (en) * | 2019-01-29 | 2019-04-05 | 京东方科技集团股份有限公司 | Alignment mark, the method aligned and display device |
CN110334402A (en) * | 2019-06-05 | 2019-10-15 | 上海华虹宏力半导体制造有限公司 | The method for placing symmetric figure |
CN110657953A (en) * | 2018-06-29 | 2020-01-07 | 上海微电子装备(集团)股份有限公司 | Focal length measuring system and method, focusing system and method and photoetching device |
CN116893585A (en) * | 2023-07-17 | 2023-10-17 | 南京航空航天大学 | High-precision alignment device based on moire fringe amplification |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010147241A2 (en) * | 2009-06-19 | 2010-12-23 | Nikon Corporation | Exposure apparatus and device manufacturing method |
CN102419520A (en) * | 2010-09-27 | 2012-04-18 | 上海微电子装备有限公司 | Alignment signal simulating generator |
CN102540322A (en) * | 2011-12-30 | 2012-07-04 | 暨南大学 | Micro-nano fiber grating laser writing method and device |
JP5299638B2 (en) * | 2009-09-14 | 2013-09-25 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
-
2015
- 2015-12-31 CN CN201511031863.6A patent/CN106933055B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010147241A2 (en) * | 2009-06-19 | 2010-12-23 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP5299638B2 (en) * | 2009-09-14 | 2013-09-25 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
CN102419520A (en) * | 2010-09-27 | 2012-04-18 | 上海微电子装备有限公司 | Alignment signal simulating generator |
CN102540322A (en) * | 2011-12-30 | 2012-07-04 | 暨南大学 | Micro-nano fiber grating laser writing method and device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110657953A (en) * | 2018-06-29 | 2020-01-07 | 上海微电子装备(集团)股份有限公司 | Focal length measuring system and method, focusing system and method and photoetching device |
CN110657953B (en) * | 2018-06-29 | 2022-02-18 | 上海微电子装备(集团)股份有限公司 | Focal length measuring system and method, focusing system and method and photoetching device |
CN109581710A (en) * | 2019-01-29 | 2019-04-05 | 京东方科技集团股份有限公司 | Alignment mark, the method aligned and display device |
CN110334402A (en) * | 2019-06-05 | 2019-10-15 | 上海华虹宏力半导体制造有限公司 | The method for placing symmetric figure |
CN116893585A (en) * | 2023-07-17 | 2023-10-17 | 南京航空航天大学 | High-precision alignment device based on moire fringe amplification |
CN116893585B (en) * | 2023-07-17 | 2024-04-02 | 南京航空航天大学 | High-precision alignment device based on moire fringe amplification |
Also Published As
Publication number | Publication date |
---|---|
CN106933055B (en) | 2019-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10163806B2 (en) | Photolithography alignment mark structures and semiconductor structures | |
US6613483B2 (en) | Mask for measuring optical aberration and method of measuring optical aberration | |
CN102540778B (en) | Measuring system and photoetching device using same | |
CN1963679A (en) | Alignment mark structure for aligning wafer | |
CN106933055B (en) | A kind of alignment device and alignment methods | |
US20180143539A1 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
JPS6313329A (en) | Exposure device | |
JP2003282420A (en) | Method and device for exposure | |
US8149385B2 (en) | Alignment unit and exposure apparatus | |
CN101464637B (en) | Measurement apparatus and method for wave aberration of photo-etching machine projection objective | |
WO2017167260A1 (en) | Coaxial mask alignment device, photolithography apparatus and alignment method | |
TWI627513B (en) | Devices and methods for sensing or determining alignment and height of a work piece, alignment sensors and apparatuses for electron-beam lithography | |
KR102189687B1 (en) | Method and apparatus for determining the location of a target structure on a substrate, method and apparatus for determining the location of a substrate | |
CN103197518B (en) | Alignment device and method | |
CN106483777A (en) | A kind of with focusing function to Barebone and alignment methods | |
JP2756862B2 (en) | Exposure equipment | |
CN108333880B (en) | Photoetching exposure device and focal plane measuring device and method thereof | |
CN116893585B (en) | High-precision alignment device based on moire fringe amplification | |
JP7317579B2 (en) | Alignment apparatus, alignment method, lithographic apparatus and method of manufacturing an article | |
TWI760959B (en) | Alignment method and associated alignment and lithographic apparatuses | |
JPH0927449A (en) | Position detection method applicable to proximity exposure | |
KR20220122489A (en) | Detection apparatus, detection method, program, lithography apparatus, and article manufacturing method | |
CN107342239B (en) | A kind of alignment measuring device and a kind of alignment system and method | |
JP2513281B2 (en) | Alignment device | |
CN103135358B (en) | Multi-light-source interference exposure device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai Applicant after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai Applicant before: Shanghai Micro Electronics Equipment Co., Ltd. |
|
CB02 | Change of applicant information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |