CN106933055A - A kind of alignment device and alignment methods - Google Patents

A kind of alignment device and alignment methods Download PDF

Info

Publication number
CN106933055A
CN106933055A CN201511031863.6A CN201511031863A CN106933055A CN 106933055 A CN106933055 A CN 106933055A CN 201511031863 A CN201511031863 A CN 201511031863A CN 106933055 A CN106933055 A CN 106933055A
Authority
CN
China
Prior art keywords
light
alignment
grating
alignment mark
diffraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201511031863.6A
Other languages
Chinese (zh)
Other versions
CN106933055B (en
Inventor
周钰颖
陆海亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to CN201511031863.6A priority Critical patent/CN106933055B/en
Publication of CN106933055A publication Critical patent/CN106933055A/en
Application granted granted Critical
Publication of CN106933055B publication Critical patent/CN106933055B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7076Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention was used including two groups of cycles nuance and grating placed side by side is used as alignment mark, the optical projection system that optical magnification is -1 times is set on alignment mark, when illumination light is by exposing on one group of grating and with θ1Angle of emergence diffraction, diffraction light is reflected back on another group of grating again by being overturn with 180 ° of angle after optical projection system, because the cycle of two groups of gratings is similar, therefore with the output angle θ of very little from another group of grating2(sinθ2=sin θ1-sinθ3, θ3It is the angle of emergence of the light that diffraction after normal incidence to another group of grating goes out, and θ1With θ3Difference very little) light that goes out of diffraction is on planar array detector according to can form Moire fringe, and transmit to processing unit, the offset distance of alignment mark is calculated, the silicon chip on travelling workpiece platform is so as to mobile alignment mark, until the offset distance of alignment mark is 0, then alignment is completed.This method can self-reference form Moire fringe, without using reference grating, it is to avoid the drift error that reference grating is brought, improve alignment precision.

Description

A kind of alignment device and alignment methods
Technical field
The present invention relates to semiconductor lithography field, more particularly to a kind of alignment device and alignment methods.
Background technology
In semiconducter IC ic manufacturing process, a complete chip is generally needed by multiple photolithographic exposure Can complete.In addition to first time photoetching, the photoetching of remaining level before exposure will be by the figure of the level and with front layer The secondary figure for leaving that exposes is accurately positioned, and so just can guarantee that between each layer pattern there is correct relative position, that is, cover Carve precision.Under normal circumstances, alignment precision be the 1/3~1/5 of litho machine resolution ratio index, litho machine for 100 nanometers and Speech, alignment precision index request is less than 35nm.When characteristic size CD requirement more hours, requirement to alignment precision and thus produce The requirement of raw alignment precision becomes more strict, CD sizes requirement 10nm or the smaller alignment precision of such as 90nm.
In projection lithography field, silicon chip alignment is more by the way of off-axis alignment, and silicon chip leads to the position relationship of mask The alignment mark crossed on work stage datum plate refers to indirect gain as transition, i.e., first establish silicon chip and mask respectively in work stage Position under coordinate system, then obtains relative position relation between silicon chip, mask indirectly.Wherein, silicon chip is in worktable coordinate system Under position establish, i.e., silicon chip alignment, it is increasingly complex, it is necessary to be set up by reference to marking.Therefore, by silicon chip alignment mark (and work stage alignment mark) carries out being directed at the key as problem with reference marker.
Fig. 1 schematically illustrates the structure of the projection lithography equipment, and silicon chip alignment system is residing wherein Position.The lithographic equipment includes:Illuminator 01 for providing exposing light beam;Mask stage 03 for supporting mask plate 02, There are mask pattern and the mark for being aligned on mask plate 02;For the mask pattern on mask plate 02 to be projected into silicon chip 06 Optical projection system 04;Work stage 07 for supporting silicon chip 06, there is the datum plate 08 for being carved with reference mark, silicon chip in work stage 07 There are the periodic markings for being aligned on 06;For the off-axis alignment system 05 that mask plate 02 and silicon chip 06 are aligned.Mask stage 03 All driven by high accuracy servo system with work stage 07.
Disclose in the prior art and a kind of can be used for the alignment device of projection aligner.Fig. 2 is refer to, with silicon chip face week Phase is respectively P3And P4Grating marker as a example by, the forming process of alignment Moire fringe used is:Light source normal incidence is to lower floor's grating P3On, (0 order diffraction light refers to be incident to after grating with the diffraction light of 0 ° of angle of emergence outgoing ,+1, -1 grade to+1, -1 order diffraction light Diffraction light refers to the diffraction light of the minimum angle of emergence outgoing that the angle of emergence is not 0 deg) with the angle of emergence as θ4(Work as illumination During including multiple wavelength, θ4It is an angular range), it is blocked into 4,0 grade of light of optical projection system, the diffraction light of level high can not Into optical projection system 4;By+1, -1 order diffraction light of optical projection system 4 with θ4’(M is optical projection system 4 Enlargement ratio) incidence angle be radiated reference grating P4' on, P4' and P3× M is slightly different, and then+1 grade-the 1 of incident light grade is spread out Light is penetrated, -1 grade of+1 order diffraction light of incident light can be with an angle, θ for very little5(When illumination is including more During individual wavelength, θ5It is an angular range) outgoing, outgoing beam is produced in confluce interferes, and forms Moire fringe.
Two gratings positioned at the grating 3 of lower floor are arranged side by side, and screen periods are respectively P3And P4, two of reference grating 5 Grating is also arranged side by side, and screen periods are respectively P3' and P4', the grating 3 respectively positioned at lower floor of reference grating 5 is through optical projection system 4 Image space on.As described above, they are by producing two groups of cycle identical interference fringes after diffraction twice, and up and down The relative movement of layer grating 3 can cause interference fringe, and opposite direction is moved each other, and relative phase between moving displacement and interference fringe Position change relation be:
Wherein,It is two groups of position differences of striped,WithThe respectively two groups position phases of striped,
In fig. 2, this two groups of interference fringes are all imaged onto on detector 9, and are transmitted into processing system 10, in processing system In system 10, the phase information between various signal processing algorithms can be applied to extract two groups of interference fringes, to determine levels light The alignment position of grid.The information of alignment position will be transferred to the control system being connected with processing system 10 and be processed, and control System processed is connected with work stage simultaneously, drives work stage to move to correct position during for exposing.
This technology is increased to Barebone by increasing an optical projection system between silicon chip alignment mark and reference marker Working distance, makes it be more applicable for modern projection litho machine.But such scheme needs to refer to grating, limiting silicon chip mark can The cycle of use and direction, and the drift of reference grating etc. is also introduced into alignment error, reduces alignment precision, therefore have Necessity invents a kind of alignment device and method without using reference grating.
The content of the invention
To solve the above problems, the present invention proposes a kind of alignment device and alignment methods, by using with different weeks The grating of phase is used as alignment mark so that forms Moire fringe without necessarily referring to self-reference by grating, and can accurately calculate right The offset distance of fiducial mark note so that alignment mark can accurately be aligned, and improve alignment precision.
To reach above-mentioned purpose, the present invention provides a kind of alignment device, successively including planar array detector, imaging lens, point Light prism, optical projection system, alignment mark, the Amici prism are also connected with lighting device light path, and the alignment mark is located at silicon On piece or datum plate, the alignment mark includes two groups of cycle discrepant gratings placed side by side, and the lighting device is carried By reaching the alignment mark after the Amici prism, the optical projection system, light passes through the illumination light of confession after producing diffraction Moire fringe image is formed after the optical projection system, the Amici prism, the imaging lens on the planar array detector.
Preferably, the grating is one-dimensional linear grating.
Preferably, the optical magnification of the optical projection system is -1 times, the optical projection system includes speculum and thing Mirror, the speculum is annular, center drilling printing opacity, and on the back focal plane of the object lens.
Preferably, the detector is charge coupled cell or complementary metal oxide semiconductors (CMOS).
Preferably, the lighting device provides the illumination light with collimated ray, the illumination light wavelength 450nm~ 750nm, or the illumination light includes the light of multiple wavelength.
Preferably, also including light source strobe unit in the lighting device, the light source of certain wavelength is selected to be illuminated.
Preferably, also including processing unit and work stage, the silicon chip or datum plate are positioned in the work stage, The processing unit is connected with the planar array detector, the work stage circuit.
Preferably, also setting up aperture diaphragm between the optical projection system and the alignment mark, the aperture diaphragm hides Keep off the reflected light that the angle of diffraction is 0 ° of diffraction light or angle of reflection is 0 °.
The present invention also provides a kind of alignment methods using alignment device as described above, comprises the following steps:
Step one:Lighting device is opened, illumination light sequentially passes through Amici prism, optical projection system and reaches first on alignment mark On group grating;
Step 2:Enter the optical projection system, the projection system from first group of diffraction light of diffraction on the alignment mark System converges on the alignment mark on second group of grating light line reflection;
Step 3:The optical projection system, described is sequentially passed through from second group of diffraction light of diffraction on second group of grating Moire fringe image is formed after Amici prism and imaging lens on planar array detector;
Step 4:The electric signal of the Moire fringe image that processing unit is transmitted according to the planar array detector, calculates and works as The spacing of position and normal place where the preceding alignment mark, and send move to work stage according to the spacing, Until the position and normal place spacing where the alignment mark are 0, alignment is completed.
Preferably,+1 grade described in step 2 in first group of diffraction light is θ with the angle of emergence of -1 order diffraction light1, thenWherein λ is the wavelength of the illumination light, P1It is first group of cycle of grating described in step one.
Preferably, angle of light on second group of grating of the alignment mark is converged to described in step 2 for 0 ° or θ1, when incidence angle is 0 ° ,+1 grade in second group of diffraction light is θ with the angle of emergence of -1 grade of diffraction light3,Wherein λ is the wavelength of the illumination light, P2It is the cycle of second group of grating;When incidence angle is θ1When, institute The angle of emergence for stating the diffraction light of+1 grade and -1 grade in second group of diffraction light is θ2, whereinThat is sin θ2= sinθ1-sinθ3
Preferably, the cycle of Moire fringe image described in step 3
Preferably, when the alignment mark occurs transverse shifting, two groups of interference fringes are each other in Moire fringe image Opposite direction is moved, and the relation between moving displacement Δ s and interference fringe between relative phase change isWhereinIt is two groups of phase differences of interference fringe,WithRespectively two groups interference The phase of striped.
Preferably, first group of grating and second group of screen periods are all higher than 1 μm.
Compared with prior art, the beneficial effects of the invention are as follows:The present invention using include two groups of cycles have nuance and Grating placed side by side sets the optical projection system that optical magnification is -1 times as alignment mark on alignment mark, works as photograph Mingguang City after Amici prism, the centre bore of Perimeter Truss Reflector and object lens by exposing on one group of grating and with θ1The angle of emergence spread out Penetrate, diffraction light is reflected back on another group of grating again by being overturn with 180 ° of angle after object lens and Perimeter Truss Reflector, and incidence angle is θ1, because the cycle of two groups of gratings is similar, therefore with the output angle θ of very little from another group of grating2(sinθ2=sin θ1-sin θ3, θ3It is the angle of emergence of the light that diffraction after normal incidence to another group of grating goes out, and θ1With θ3Difference very little) light that goes out of diffraction Moire fringe is formed on planar array detector after sequentially passing through object lens, the centre bore of Perimeter Truss Reflector and imaging lens, then The picture signal of Moire fringe is transmitted to processing unit, the offset distance of alignment mark is calculated, then by controlling workpiece The movement of platform, the silicon chip on travelling workpiece platform until the offset distance of alignment mark is 0, is then aligned so as to mobile alignment mark Complete.This method can self-reference form Moire fringe, without using reference grating, it is to avoid the drift that reference grating is brought is missed Difference, improves alignment precision.
Brief description of the drawings
Fig. 1 is the structural representation of projection lithography equipment in the prior art;
Fig. 2 is alignment device structural representation in the prior art;
Fig. 3 is alignment device structural representation in the embodiment of the present invention one;
Fig. 4 is Moire fringe image forming apparatus structural representation in the embodiment of the present invention one;
Fig. 5 is the top view of speculum in Fig. 4;
Fig. 6 is defocus impact analysis schematic diagram in the embodiment of the present invention one;
Fig. 7 is obliquity effects analysis schematic diagram in the embodiment of the present invention one.
In Fig. 1:01- illuminators, 02- mask plates, 03- mask stages, 04- optical projection systems, 05- off-axis alignments system, 06- Silicon chip, 07- work stages, 08- datum plates;
In Fig. 2:1- work stages, 2- silicon chips, 3- gratings, 4- optical projection systems, 5- reference gratings, 6- illuminators, 7- detections Device camera lens, 8- beam splitting systems, 9- detectors, 10- processing systems;
Present invention diagram:100- lighting devices, 101- illumination lights, 200- optical projection systems, the diffraction lights of 201- first, 202- Two diffraction lights, 210- object lens, 220- speculums, 300- silicon chips, the reflected lights of 301- first, the reflected lights of 302- second, 310- alignments Mark, the gratings of 311- first, the gratings of 312- second, 320- ideal focal plane, 330- ideal images position, 400- imaging lens, The diffraction lights of 401- the 3rd, the diffraction lights of 402- the 4th, 500- planar array detectors, 600- Amici prisms, 700- processing units, 800- works Part platform.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.
Embodiment one
Refer to Fig. 3, the alignment device that the present invention is provided, including planar array detector 500, imaging lens 400, Amici prism 600th, optical projection system 200, alignment mark 310, the Amici prism 600 are also connected with the light path of lighting device 100, described to fiducial mark Note 310 is located on silicon chip 300, and the alignment mark 310 includes two groups of cycle discrepant gratings, respectively the first grating 311 With the second grating 312, the illumination light that the lighting device 100 is provided is by the Amici prism 600, the optical projection system 200 After reach the alignment mark 310, and diffraction by the optical projection system 200, the Amici prism 600, the imaging lens Moire fringe image is formed after 400 on the planar array detector 500.
Lighting device 100 provides collimated illumination light.Illumination light can be broadband light (such as 450~750nm), or The light of multiple wavelength, such as wavelength are respectively λ1、λ2、λ3Laser.It is preferred that light source strobe unit can also be included, one is may be selected Standing wave light source lighting long.The different process of silicon chip 300 layer, the light source of certain wavelength different to the diffraction efficiency of different wavelengths of light As diffraction efficiency light source higher, i.e., be illuminated using diffraction efficiency light source higher, to improve the contrast of interference fringe image Degree, reaches the purpose of enhancing Technological adaptability.
Amici prism 600, light beam of the diffraction from lighting device 100 makes its normal incidence (vertical incidence) arrive alignment mark On 310, while the diffraction light by optical projection system 200 from the diffraction of alignment mark 310 can be transmitted.
The optical magnification of the optical projection system 200 is -1, and optical projection system 200 includes speculum 220 and object lens 210, Fig. 5 is refer to, speculum 220 is annular, center drilling printing opacity, and on the back focal plane of object lens 210, object lens 210 are used for Collect the light from diffraction on alignment mark 310.
Imaging lens 400 are used to for the light of the re-diffraction of low-angle to converge to the surface of planar array detector 500, form More Stripe pattern.Re-diffraction light refers to reflect to project again by speculum 220 from after alignment mark 310 upper first time diffraction On alignment mark 310, then second light of diffraction.
Planar array detector 500, usually CCD or CMOS, the light for collecting from optical grating diffraction forms interference fringe The image of (being Moire fringe in the present embodiment).Planar array detector 500 is also connected with the circuit of processing unit 700, by interference fringe Picture signal send processing unit 700 to, alignment mark is calculated according to the picture signal of interference fringe by processing unit 700 310 offset distance.
Alignment mark 310, the respectively mark with two rows difference screen periods, the first grating 311 and the second grating 312, the screen periods of two groups of gratings are slightly differed.Alignment mark 310 can be one-dimensional linear grating, or linear with fine structure Grating, on labeled vector silicon chip 300, silicon chip 300 is positioned in work stage 800, and work stage 800 is electric with processing unit 700 Road connects, and processing unit 700 sends move after the offset distance for calculating alignment mark 310 to work stage 800, mobile Silicon chip 300 is so as to drive alignment mark 310 to move, until alignment mark 310 is 0 with the offset distance of normal place.
Refer to Fig. 3 and Fig. 4, the present invention also provides a kind of alignment methods using alignment device described above, including with Lower step:
Step one:Lighting device 100 is opened, illumination light 101 sequentially passes through Amici prism 600, the normal incidence of optical projection system 200 (vertical incidence) is reached on the first grating 311;
Step 2:Because the optical magnification of optical projection system 200 is -1, first gone out from diffraction on the first grating 311 Diffraction light 201 (+1 grade) and the second diffraction light 202 (- 1 grade) are with the first output angle θ1Outgoing to object lens 210 reach speculum 220 On, it is anti-by going successively to first reflected light 301 and second of the formation of object lens 210 after the annular reflection region reflection of speculum 220 Light 302 is penetrated, the first reflected light 301 and the second reflected light 302 reach the second grating 312, the first reflected light 301 and the second reflected light 302 incidence angles for reaching the second grating 312 are θ1, i.e., overturn 180 ° equivalent to by the first diffraction light 201 and the second diffraction light 202 After form the first reflected light 301 and the second reflected light 302 and then be incident to the second grating 312;
Step 3:Because the first grating 311 is similar with the screen periods of the second grating 312, therefore reach the second grating 312 On the first reflected light 301 and the second reflected light 302 by the diffraction of the second grating 312 with the second output angle θ2Outgoing (sin θ2 =sin θ1-sinθ3, the 3rd output angle θ3It is the angle of emergence of the light that diffraction after normal incidence to the second grating goes out, and θ1With θ3Difference Very little) the 3rd diffraction light 401 (+1 grade) and the 4th diffraction light 402 (- 1 grade) are formed, due to the first output angle θ1With the 3rd outgoing Angle θ3Difference very little, therefore the second output angle θ2It is the low-angle angle of emergence, by the central bore region of speculum 220 and can wears Cross Amici prism 600 and imaging lens 400 form Moire fringe on planar array detector 500;
Step 4:The electric signal of the Moire fringe image that processing unit 700 is transmitted according to planar array detector 500, calculates The spacing of position and normal place where current alignment mark 310, and mobile finger is sent to work stage 800 according to the spacing Order, until the position and normal place spacing where alignment mark 310 are 0.
Similarly, if normal incidence to the second grating 312 light with the 3rd output angle θ3Diffraction is reached into object lens 210 On speculum 220, by speculum 220 reflection after again by object lens 210 reach the first grating 311 on, then with the angle of emergence as- θ2Diffraction goes out, and equally passes sequentially through object lens 210, the central bore region of speculum 220, Amici prism 600 and imaging lens 400 Reach planar array detector 500 and form Moire fringe, it is identical with the Moire fringe formed in step 3 to form the Moire fringe cycle.
Wherein,Wherein λ is the wavelength of illumination light 101, P1It is the screen periods of the first grating 311.P2It is the screen periods of the second grating 312,sinθ2=sin θ1-sinθ3, formation is not The cycle of your stripe pattern
It is preferred that when there is transverse shifting in alignment mark 310, two groups of interference fringes opposite direction fortune each other in Moire fringe Dynamic, the relation between moving displacement Δ s and interference fringe between relative phase change isWhereinIt is two groups of phase differences of interference fringe,WithTwo groups of phases of interference fringe respectively in Moire fringe.
Due to can be applicable without reference grating, therefore grating of the screen periods more than 1um, improve to the expansible of Barebone Property.When data processing is to two groups of phase differences of stripedWhen resolution ratio is identical, screen periods are smaller, and Δ s resolution ratio is higher, i.e., Alignment performance is higher.
Additionally, program structure is on substantially symmetrical about its central axis, therefore suitable for alignment mark at any angle, especially 45 ° With 135 ° of grating alignment marks in direction, alignment speed is improved, to adapt to the requirement of more high yield.
Fig. 6 is refer to, when alignment mark 310 occurs defocus (not inclining), A and B is on the alignment mark 310 of defocus Two points, A ' and B ' is respectively the ideal image point of 2 points of A, B, and on ideal image position 330, and a, b are respectively A, B two Position (2 points of A, B and the distance of ideal focal plane 320 etc. of point by actual projected after first time diffraction on alignment mark 310 In the distance of 2 points of a, b and preferable focal plane 320) because when the defocus distance of 2 points of A, B is for L, then 2 points of A, B into Distance of the image position apart from ideal image position 330 is L × M, and wherein M is absolute for the optical magnification of optical projection system 200 Value, when actual optical magnification is timing, the direction of motion of imaging is consistent with the direction of motion of object, but when actual optics is put When big multiplying power is to bear, then the direction of motion and the direction of motion of object being imaged are conversely, and the optical magnification of optical projection system 200 It is -1, therefore ideal image point A ', the B ' of 2 points of A, B and the right position of actual imaging point a, b and 2 points of A, B in figure Right position is the imaging of symmetry conversely, be not subjected to displacement still.Therefore as can be seen from the figure between 2 points of a, b Horizontal range it is equal with the horizontal range between A ', 2 points of B ', this just because of Projection System Optics enlargement ratio be -1 times, Therefore 2 points of a, b is projected to from symmetry after 180 ° of the diffraction light upset of 2 outgoing of A, B, the level interval that A, B is not at 2 points Have because becoming big after diffraction, reflection distortion or diminishing, therefore defocus has no effect on alignment result.
Fig. 7 is refer to, when the run-off the straight of alignment mark 310 (not defocus), A and B is inclined alignment mark 310 On two points, a, b be respectively A, B at 2 points by position of the actual projected on alignment mark 310 after first time diffraction, A, B, Straight line where tetra- points of a, b intersects with preferable focal plane 320, it can be seen that also due to Projection System Optics amplify Multiplying power is -1 times, therefore is also to be projected to 2 points of a, b after overturning 180 ° from the diffraction light of 2 outgoing of A, B, also in that being one Symmetry imaging is planted, therefore horizontal range is still constant, and be not affected by distorting and becoming big or diminution, therefore nor affect on alignment As a result.
As can be seen here, this alignment device and method can not only improve alignment precision, and whether alignment mark defocus or Person incline, do not affect alignment result, further increase alignment device adaptability and can realize, operability.
Embodiment two
The present embodiment is to increase aperture light between Amici prism 600 and imaging lens 400 with the difference of embodiment one Late (not shown), due to 0 order diffraction light (i.e. the angle of emergence is 0 ° of diffraction light) or normal incidence from diffraction on alignment mark 310 The formation of Moire fringe can be influenceed to the reflected light that the back reflection angle of alignment mark 310 is 0 ° so that Moire fringe image is thin out, clearly It is clear degree decline, therefore set up between Amici prism 600 and imaging lens 400 aperture diaphragm can block 0 order diffraction light or Angle of reflection is 0 ° of reflected light, so as to reduce the influence factor of Moire fringe formation so that Moire fringe becomes apparent from.
The present invention is described to above-described embodiment, but the present invention is not limited only to above-described embodiment, it is clear that this area Technical staff can carry out various changes and modification to invention without departing from the spirit and scope of the present invention.So, if this hair These bright modifications and modification belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to include Including these changes and modification.

Claims (14)

1. a kind of alignment device, it is characterised in that successively including planar array detector, imaging lens, Amici prism, optical projection system, Alignment mark, the Amici prism is also connected with lighting device light path, and the alignment mark is located on silicon chip or datum plate, institute Stating alignment mark includes two groups of cycle discrepant gratings placed side by side, and the illumination light that the lighting device is provided is by described Reach the alignment mark after Amici prism, the optical projection system, produce after diffraction light by the optical projection system, described point Moire fringe image is formed after light prism, the imaging lens on the planar array detector.
2. alignment device as claimed in claim 1, it is characterised in that the grating is one-dimensional linear grating.
3. alignment device as claimed in claim 1, it is characterised in that the optical magnification of the optical projection system is -1 times, The optical projection system includes speculum and object lens, and the speculum is annular, center drilling printing opacity, and positioned at the object lens On back focal plane.
4. alignment device as claimed in claim 1, it is characterised in that the detector is charge coupled cell or complementary gold Category oxide semiconductor.
5. alignment device as claimed in claim 1, it is characterised in that the lighting device provides the illumination with collimated ray Light, the illumination light wavelength includes the light of multiple wavelength in 450nm~750nm, or the illumination light.
6. alignment device as claimed in claim 1, it is characterised in that also include light source strobe unit in the lighting device, The light source of certain wavelength is selected to be illuminated.
7. alignment device as claimed in claim 1, it is characterised in that also including processing unit and work stage, the silicon chip or Person's datum plate is positioned in the work stage, and the processing unit is connected with the planar array detector, the work stage circuit.
8. alignment device as claimed in claim 1, it is characterised in that also set between the optical projection system and the alignment mark Aperture diaphragm is put, the aperture diaphragm blocks the diffraction light that the angle of diffraction is 0 ° or the reflected light that angle of reflection is 0 °.
9. alignment methods of a kind of alignment device using as described in claim 1~8 any one, it is characterised in that including Following steps:
Step one:Lighting device is opened, illumination light sequentially passes through Amici prism, optical projection system and reaches first group of light on alignment mark On grid;
Step 2:Enter the optical projection system from first group of diffraction light of diffraction on the alignment mark, the optical projection system will Light line reflection is converged on the alignment mark on second group of grating;
Step 3:The optical projection system, the light splitting are sequentially passed through from second group of diffraction light of diffraction on second group of grating Moire fringe image is formed after prism and imaging lens on planar array detector;
Step 4:The electric signal of the Moire fringe image that processing unit is transmitted according to the planar array detector, calculates current institute The spacing of position and normal place where stating alignment mark, and send move to work stage according to the spacing, until Position and normal place spacing where the alignment mark are 0, and alignment is completed.
10. alignment methods as described in claim 9, it is characterised in that described in step 2 in first group of diffraction light+1 The angle of emergence of level and -1 order diffraction light is θ1, thenWherein λ is the wavelength of the illumination light, P1It is institute in step one State first group of cycle of grating.
11. alignment methods as described in claim 10, it is characterised in that the alignment mark is converged to described in step 2 Angle of light on second group of grating is 0 ° or θ1, when incidence angle is 0 ° ,+1 grade and -1 in second group of diffraction light The angle of emergence of the diffraction light of level is θ3,Wherein λ is the wavelength of the illumination light, P2It is second group of grating Cycle;When incidence angle is θ1When ,+1 grade in second group of diffraction light is θ with the angle of emergence of -1 grade of diffraction light2, whereinThat is sin θ2=sin θ1-sinθ3
12. alignment methods as described in claim 11, it is characterised in that the cycle of Moire fringe image described in step 3
13. alignment methods as described in claim 11, it is characterised in that when the alignment mark occurs transverse shifting, Two groups of interference fringe opposite direction motions each other in Moire fringe image, relative phase becomes between moving displacement Δ s and interference fringe Relation between change isWhereinIt is two groups of phase differences of interference fringe,With The respectively two groups phases of interference fringe.
14. alignment methods as described in claim 9, it is characterised in that first group of grating and second group of grating Cycle is all higher than 1 μm.
CN201511031863.6A 2015-12-31 2015-12-31 A kind of alignment device and alignment methods Active CN106933055B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201511031863.6A CN106933055B (en) 2015-12-31 2015-12-31 A kind of alignment device and alignment methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201511031863.6A CN106933055B (en) 2015-12-31 2015-12-31 A kind of alignment device and alignment methods

Publications (2)

Publication Number Publication Date
CN106933055A true CN106933055A (en) 2017-07-07
CN106933055B CN106933055B (en) 2019-04-12

Family

ID=59443806

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201511031863.6A Active CN106933055B (en) 2015-12-31 2015-12-31 A kind of alignment device and alignment methods

Country Status (1)

Country Link
CN (1) CN106933055B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109581710A (en) * 2019-01-29 2019-04-05 京东方科技集团股份有限公司 Alignment mark, the method aligned and display device
CN110334402A (en) * 2019-06-05 2019-10-15 上海华虹宏力半导体制造有限公司 The method for placing symmetric figure
CN110657953A (en) * 2018-06-29 2020-01-07 上海微电子装备(集团)股份有限公司 Focal length measuring system and method, focusing system and method and photoetching device
CN116893585A (en) * 2023-07-17 2023-10-17 南京航空航天大学 High-precision alignment device based on moire fringe amplification

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010147241A2 (en) * 2009-06-19 2010-12-23 Nikon Corporation Exposure apparatus and device manufacturing method
CN102419520A (en) * 2010-09-27 2012-04-18 上海微电子装备有限公司 Alignment signal simulating generator
CN102540322A (en) * 2011-12-30 2012-07-04 暨南大学 Micro-nano fiber grating laser writing method and device
JP5299638B2 (en) * 2009-09-14 2013-09-25 株式会社ニコン Exposure apparatus and device manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010147241A2 (en) * 2009-06-19 2010-12-23 Nikon Corporation Exposure apparatus and device manufacturing method
JP5299638B2 (en) * 2009-09-14 2013-09-25 株式会社ニコン Exposure apparatus and device manufacturing method
CN102419520A (en) * 2010-09-27 2012-04-18 上海微电子装备有限公司 Alignment signal simulating generator
CN102540322A (en) * 2011-12-30 2012-07-04 暨南大学 Micro-nano fiber grating laser writing method and device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110657953A (en) * 2018-06-29 2020-01-07 上海微电子装备(集团)股份有限公司 Focal length measuring system and method, focusing system and method and photoetching device
CN110657953B (en) * 2018-06-29 2022-02-18 上海微电子装备(集团)股份有限公司 Focal length measuring system and method, focusing system and method and photoetching device
CN109581710A (en) * 2019-01-29 2019-04-05 京东方科技集团股份有限公司 Alignment mark, the method aligned and display device
CN110334402A (en) * 2019-06-05 2019-10-15 上海华虹宏力半导体制造有限公司 The method for placing symmetric figure
CN116893585A (en) * 2023-07-17 2023-10-17 南京航空航天大学 High-precision alignment device based on moire fringe amplification
CN116893585B (en) * 2023-07-17 2024-04-02 南京航空航天大学 High-precision alignment device based on moire fringe amplification

Also Published As

Publication number Publication date
CN106933055B (en) 2019-04-12

Similar Documents

Publication Publication Date Title
US10163806B2 (en) Photolithography alignment mark structures and semiconductor structures
US6613483B2 (en) Mask for measuring optical aberration and method of measuring optical aberration
CN102540778B (en) Measuring system and photoetching device using same
CN1963679A (en) Alignment mark structure for aligning wafer
CN106933055B (en) A kind of alignment device and alignment methods
US20180143539A1 (en) Exposure apparatus, exposure method, and device manufacturing method
JPS6313329A (en) Exposure device
JP2003282420A (en) Method and device for exposure
US8149385B2 (en) Alignment unit and exposure apparatus
CN101464637B (en) Measurement apparatus and method for wave aberration of photo-etching machine projection objective
WO2017167260A1 (en) Coaxial mask alignment device, photolithography apparatus and alignment method
TWI627513B (en) Devices and methods for sensing or determining alignment and height of a work piece, alignment sensors and apparatuses for electron-beam lithography
KR102189687B1 (en) Method and apparatus for determining the location of a target structure on a substrate, method and apparatus for determining the location of a substrate
CN103197518B (en) Alignment device and method
CN106483777A (en) A kind of with focusing function to Barebone and alignment methods
JP2756862B2 (en) Exposure equipment
CN108333880B (en) Photoetching exposure device and focal plane measuring device and method thereof
CN116893585B (en) High-precision alignment device based on moire fringe amplification
JP7317579B2 (en) Alignment apparatus, alignment method, lithographic apparatus and method of manufacturing an article
TWI760959B (en) Alignment method and associated alignment and lithographic apparatuses
JPH0927449A (en) Position detection method applicable to proximity exposure
KR20220122489A (en) Detection apparatus, detection method, program, lithography apparatus, and article manufacturing method
CN107342239B (en) A kind of alignment measuring device and a kind of alignment system and method
JP2513281B2 (en) Alignment device
CN103135358B (en) Multi-light-source interference exposure device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai

Applicant after: Shanghai microelectronics equipment (Group) Limited by Share Ltd

Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai

Applicant before: Shanghai Micro Electronics Equipment Co., Ltd.

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant