JP5293525B2 - Composition for sealing an optical semiconductor element - Google Patents
Composition for sealing an optical semiconductor element Download PDFInfo
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- JP5293525B2 JP5293525B2 JP2009214499A JP2009214499A JP5293525B2 JP 5293525 B2 JP5293525 B2 JP 5293525B2 JP 2009214499 A JP2009214499 A JP 2009214499A JP 2009214499 A JP2009214499 A JP 2009214499A JP 5293525 B2 JP5293525 B2 JP 5293525B2
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- epoxy
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- 239000000203 mixture Substances 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 230000003287 optical effect Effects 0.000 title claims description 11
- 238000007789 sealing Methods 0.000 title claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 26
- 229920000647 polyepoxide Polymers 0.000 claims description 26
- 125000003700 epoxy group Chemical group 0.000 claims description 25
- 229920001296 polysiloxane Polymers 0.000 claims description 19
- 229920002050 silicone resin Polymers 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- 239000004593 Epoxy Substances 0.000 claims description 15
- 239000003054 catalyst Substances 0.000 claims description 13
- 238000007259 addition reaction Methods 0.000 claims description 8
- 125000002723 alicyclic group Chemical group 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- -1 β- (3,4-epoxycyclohexyl) ethyl group Chemical group 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 150000008065 acid anhydrides Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 48
- 229920005989 resin Polymers 0.000 description 28
- 239000011347 resin Substances 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 6
- 238000006482 condensation reaction Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000004714 phosphonium salts Chemical group 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- QXBYUPMEYVDXIQ-UHFFFAOYSA-N 4-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound CC1CCCC2C(=O)OC(=O)C12 QXBYUPMEYVDXIQ-UHFFFAOYSA-N 0.000 description 2
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 2
- 235000019799 monosodium phosphate Nutrition 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- XAYDWGMOPRHLEP-UHFFFAOYSA-N 6-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1CCCC2OC21C=C XAYDWGMOPRHLEP-UHFFFAOYSA-N 0.000 description 1
- LQOPXMZSGSTGMF-UHFFFAOYSA-N 6004-79-1 Chemical compound C1CC2C3C(=O)OC(=O)C3C1C2 LQOPXMZSGSTGMF-UHFFFAOYSA-N 0.000 description 1
- CYJKAZJKDIWRQN-UHFFFAOYSA-O CC[Si+](C)(C)OC(C)(C)[Si+](C(C)(C)O[Si+](C)(C)CC)(c1ccccc1)O[SH2+](C)C Chemical compound CC[Si+](C)(C)OC(C)(C)[Si+](C(C)(C)O[Si+](C)(C)CC)(c1ccccc1)O[SH2+](C)C CYJKAZJKDIWRQN-UHFFFAOYSA-O 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- OZEHOHQZIRILDX-UHFFFAOYSA-N ctk1b7797 Chemical compound O=C1OC(=O)C2C1C1(C)CC2CC1 OZEHOHQZIRILDX-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- LYMYULOYDUWMOP-UHFFFAOYSA-M diethoxy-sulfanylidene-sulfido-$l^{5}-phosphane;tetrabutylphosphanium Chemical compound CCOP([S-])(=S)OCC.CCCC[P+](CCCC)(CCCC)CCCC LYMYULOYDUWMOP-UHFFFAOYSA-M 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/38—Polysiloxanes modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Silicon Polymers (AREA)
Description
本発明は、LED等の光半導体素子を封止するための組成物に関し、詳細には、エポキシ基が付加反応によりシリコーン鎖に導入された分岐シリコーン樹脂を含み、ポットライフが長く、耐熱衝撃性等に優れた硬化物を与える組成物に関する。 The present invention relates to a composition for sealing an optical semiconductor element such as an LED, and more specifically, includes a branched silicone resin in which an epoxy group is introduced into a silicone chain by an addition reaction, has a long pot life, and has a thermal shock resistance. It is related with the composition which gives the hardened | cured material excellent in these.
従来、光半導体素子を封止するために、エポキシ樹脂組成物が広く用いられている。該エポキシ樹脂組成物は、通常、脂環式エポキシ樹脂、硬化剤および硬化触媒を含有する。該組成物を、キャスティング、トランスファー成形などの成形法により、光半導体素子が配置された金型に流しこみ硬化させることにより、光半導体素子を封止する。しかし、LEDの輝度及びパワーUPに伴い、エポキシ樹脂の変色劣化が問題となっている。特に脂環式エポキシ樹脂は、青色光や紫外線により黄変するため、LED素子の寿命を短くするという問題があった。 Conventionally, epoxy resin compositions have been widely used to seal optical semiconductor elements. The epoxy resin composition usually contains an alicyclic epoxy resin, a curing agent and a curing catalyst. The composition is poured and cured by a molding method such as casting or transfer molding into a mold in which the optical semiconductor element is disposed, thereby sealing the optical semiconductor element. However, with the brightness and power of the LED, the color change deterioration of the epoxy resin has become a problem. In particular, the alicyclic epoxy resin has a problem of shortening the life of the LED element because it is yellowed by blue light or ultraviolet light.
そこで、耐熱耐光に優れたシリコーンをエポキシ化合物で変性した、エポキシ変性シリコーンを含む組成物が提案されている。該エポキシ変性シリコーンとしては、例えば、エポキシ基を有するシランと、シラノールとを縮合させて合成された樹脂(特許文献1)、エポキシ環を少なくとも2つ有するシルセスキオキサン(特許文献2)、一官能シロキサン単位(M単位)と四官能シロキサン単位(Q単位)からなるオルガノポリシロキサンにエポキシ基を導入したもの(特許文献3)等が知られている。 Therefore, a composition containing an epoxy-modified silicone obtained by modifying a silicone excellent in heat and light resistance with an epoxy compound has been proposed. Examples of the epoxy-modified silicone include a resin synthesized by condensing a silane having an epoxy group and silanol (Patent Document 1), a silsesquioxane having at least two epoxy rings (Patent Document 2), one Known is an organopolysiloxane composed of a functional siloxane unit (M unit) and a tetrafunctional siloxane unit (Q unit) in which an epoxy group is introduced (Patent Document 3).
しかし、これらのシリコーン樹脂を含む組成物は、その硬化物の弾性率が低く且つ脆い。そのため、該組成物で封止したLEDは、温度サイクル試験において樹脂にクラックが入り易いという問題があった。 However, the composition containing these silicone resins has a low elastic modulus and is brittle. Therefore, the LED encapsulated with the composition has a problem that the resin easily cracks in the temperature cycle test.
本発明者らは、上記問題を解決すべく、所定の直鎖ポリシロキサン構造を有するエポキシ変性シリコーン樹脂を含む組成物を発明した(特願2008−195122号)。本発明は、該組成物を耐熱衝撃性及びポットライフの点でさらに改良することを目的とする。 In order to solve the above problems, the present inventors have invented a composition containing an epoxy-modified silicone resin having a predetermined linear polysiloxane structure (Japanese Patent Application No. 2008-195122). The present invention aims to further improve the composition in terms of thermal shock resistance and pot life.
本発明者らは、種々検討した結果、エポキシ基を付加反応によりシリコーン鎖に導入することによって、上記目的を達成できることを見出し、本発明を完成させるに至った。即ち、本発明は下記(A)、(B)、(C)及び(D)を含む光半導体素子封止用組成物である。
(A)不飽和基含有エポキシ化合物と、SiH基を有するオルガノポリシロキサンとの付加反応により調製される分岐シリコーン樹脂であって、1分子当たり、3以上のエポキシ基、1以上の(R1SiO3/2)単位、3以上の(R2R3R4SiO1/2)単位、及び、3以上の(R2R3SiO)n(nは1〜20の整数)構造を有する、分岐シリコーン樹脂 100質量部
[R1はC1−20の一価の有機基、R2及びR3は、互いに独立に、C1−20の一価の有機基、R4はC1−20の一価の有機基、但し、1分子中のR4のうちの3以上はエポキシ基含有基である]
(B)1分子当り2個以上のエポキシ基を有する非芳香族系エポキシ樹脂
(A)成分と(B)成分の合計100質量部に対して50質量部以下
(C)硬化剤 (A)成分と(B)成分のエポキシ基の合計1モルに対し該エポキシ基と反応性の基が0.4〜1.5モルとなる量
(D)硬化触媒 (A)成分、(B)成分及び(C)成分の合計100質量部に対し0.01〜3質量部
As a result of various studies, the present inventors have found that the above object can be achieved by introducing an epoxy group into a silicone chain by an addition reaction, and have completed the present invention. That is, this invention is a composition for optical semiconductor element sealing containing the following (A), (B), (C) and (D).
(A) A branched silicone resin prepared by an addition reaction between an unsaturated group-containing epoxy compound and an organopolysiloxane having a SiH group, wherein 3 or more epoxy groups and 1 or more (R 1 SiO 3/2 ) units, 3 or more (R 2 R 3 R 4 SiO 1/2 ) units, and 3 or more (R 2 R 3 SiO) n (n is an integer of 1 to 20) structure, branched 100 parts by mass of silicone resin [R 1 is a C 1-20 monovalent organic group, R 2 and R 3 are independently of each other a C 1-20 monovalent organic group, and R 4 is a C 1-20 Monovalent organic group, provided that 3 or more of R 4 in one molecule is an epoxy group-containing group]
(B) Non-aromatic epoxy resin having two or more epoxy groups per molecule (A) component and (B) 50 parts by mass or less with respect to 100 parts by mass in total (C) curing agent (A) component (D) Curing catalyst (A) component, (B) component, and (B) amount which becomes 0.4-1.5 mol of this epoxy group and a reactive group with respect to 1 mol in total of the epoxy group of (B) component C) 0.01 to 3 parts by mass with respect to 100 parts by mass in total of the components
上記本発明の光半導体素子止封止用組成物はポットライフが長く、保存中に粘度が上昇することが無い。また、該組成物の硬化物は、高硬度でありながら耐熱衝撃性に優れ、良好な光半導体パッケージを形成する。 The composition for sealing an optical semiconductor element of the present invention has a long pot life and does not increase in viscosity during storage. Further, the cured product of the composition is excellent in thermal shock resistance while being high in hardness, and forms a good optical semiconductor package.
本発明の組成物において、(A)分岐シリコーン樹脂は、不飽和基含有エポキシ化合物と、SiH基を有するオルガノポリシロキサンとの付加反応により調製される。これにより、縮合反応によりエポキシ基を導入したシリコーン樹脂を含む場合に比べて長いポットライフを達成することができる。付加反応は、定法に従い白金触媒の存在下で行う。 In the composition of the present invention, the branched silicone resin (A) is prepared by an addition reaction between an unsaturated group-containing epoxy compound and an organopolysiloxane having a SiH group. Thereby, a long pot life can be achieved as compared with the case where a silicone resin into which an epoxy group is introduced by a condensation reaction is included. The addition reaction is performed in the presence of a platinum catalyst according to a conventional method.
(A)分岐シリコーン樹脂は、1分子当り3以上のエポキシ基を有する。エポキシ基は、後述するR4中に含まれ、上記付加反応により飽和となった結合、例えばビニル基由来のエチレン基、アリル基由来のプロピレン基、さらに、該飽和結合とエポキシ基とを連結する基を介して、ケイ素原子に結合されている。(A)分岐シリコーン樹脂のエポキシ当量は、200〜1500g/eq、好ましくは200〜1200g/eq、である。 (A) The branched silicone resin has 3 or more epoxy groups per molecule. The epoxy group is contained in R 4 described later, and is saturated by the above addition reaction, for example, an ethylene group derived from a vinyl group, a propylene group derived from an allyl group, and further connects the saturated bond and the epoxy group. It is bonded to the silicon atom via a group. (A) The epoxy equivalent of the branched silicone resin is 200 to 1500 g / eq, preferably 200 to 1200 g / eq.
(A)分岐シリコーン樹脂は、1分子当たり、1以上の(R1SiO3/2)単位、3以上の(R2R3R4SiO1/2)単位、及び、3以上の(R2R3SiO)n(nは1〜20の整数)構造を有する。分岐を有するので、硬化物の硬度が高い。 (A) The branched silicone resin has one or more (R 1 SiO 3/2 ) units, three or more (R 2 R 3 R 4 SiO 1/2 ) units, and three or more (R 2 ) units per molecule. R 3 SiO) n (n is an integer of 1 to 20) structure. Since it has a branch, the hardness of the cured product is high.
R1、R2、R3及びR4はC1−20の一価の有機基、但し、1分子中のR4のうちの3以上はエポキシ基含有基である。C1−20の一価の有機基としては、メチル基、エチル基、プロピル基、ブチル基等のアルキル基、シクロペンチル基、シクロヘキシル基、ノルボニル基等の脂環式基、フェニル基等のアリール基等が挙げられる。好ましくは、R1がフェニル基であり、R2及びR3がメチル基である。 R 1 , R 2 , R 3 and R 4 are C 1-20 monovalent organic groups, provided that three or more of R 4 in one molecule are epoxy group-containing groups. The monovalent organic group of C 1-20 includes an alkyl group such as a methyl group, an ethyl group, a propyl group, and a butyl group, an alicyclic group such as a cyclopentyl group, a cyclohexyl group, and a norbornyl group, and an aryl group such as a phenyl group. Etc. Preferably, R 1 is a phenyl group, and R 2 and R 3 are methyl groups.
R4のエポキシ基含有基としては、γ−グリシドキシエチル基、及びβ−(3,4−エポキシシクロへキシル)エチル基及びこれらの組合せが例示される。好ましくはβ−(3,4−エポキシシクロへキシル)エチル基である。 Examples of the epoxy group-containing group of R 4 include a γ-glycidoxyethyl group, a β- (3,4-epoxycyclohexyl) ethyl group, and combinations thereof. A β- (3,4-epoxycyclohexyl) ethyl group is preferred.
好ましくは、(A)分岐シリコーン樹脂は下記式(2)で表される。 Preferably, (A) branched silicone resin is represented by following formula (2).
式(2)において、R1〜R4は上述のとおりであり、p、q、及びrは1〜20、好ましくは1〜10、の整数であり、sは1〜5、好ましくは1〜2、の整数である。
In the formula (2), R 1 to R 4 are as described above, p, q, and r are integers of 1 to 20, preferably 1 to 10, and s is 1 to 5, preferably 1 to 1. An integer of 2.
(A)分岐シリコーン樹脂は、上述のとおり、SiH基を有するオルガノポリシロキサンに、ビニル基等の不飽和基を有するエポキシ化合物を、白金等の金属触媒の存在下で、付加させて調製される。例えば、上記式(2)のものは、下記式(3)で表される末端にSiH基を有するオルガノポリシロキサンに、不飽和基を有するエポキシ化合物を付加反応させて得ることができる。 (A) As described above, the branched silicone resin is prepared by adding an epoxy compound having an unsaturated group such as a vinyl group to an organopolysiloxane having a SiH group in the presence of a metal catalyst such as platinum. . For example, those above formula (2) may be to turn organopolysiloxane having SiH groups at the ends represented by the following formula (3), obtained by addition reaction of an epoxy compound having an unsaturated group.
(式(3)において、R1〜R4、p、q、r及びsは上記のとおりである。)
該不飽和基を有するエポキシ化合物としては、ビニルシクロヘキセンモノオキサイド(セロキサイド2000Z、ダイセル化学工業社製)が例示される。
(In Formula (3), R 1 to R 4 , p, q, r, and s are as described above.)
Examples of the epoxy compound having an unsaturated group include vinylcyclohexene monooxide (Celoxide 2000Z, manufactured by Daicel Chemical Industries).
上記式(3)のオルガノポリシロキサンは、例えば、R1SiX3、HR2R3SiXで表される有機ケイ素化合物(Xはアルコキシ基等の加水分解性の基)と(R2R3SiO)n(n=1〜20)構造を有し、末端に加水分解性の基を有するオルガノポリシロキサンとを加水分解及び縮合反応に付することにより合成することができる。 The organopolysiloxane of the above formula (3) is, for example, an organosilicon compound represented by R 1 SiX 3 or HR 2 R 3 SiX (X is a hydrolyzable group such as an alkoxy group) and (R 2 R 3 SiO ) It can be synthesized by subjecting an organopolysiloxane having an n (n = 1 to 20) structure and having a hydrolyzable group at the terminal to hydrolysis and condensation reactions.
(B)1分子当り2個以上のエポキシ基を有する非芳香族系エポキシ樹脂としては、(3,4−エポキシシクロヘキサン)メチル3’,4’−エポキシシクロヘキシルカルボキシレート等の脂環式エポキシ樹脂;ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、アラルキル型エポキシ樹脂及びビフェニルアラルキル型エポキシ樹脂等の芳香環を水素添加した水添型エポキシ樹脂;ジシクロペンタジエン型エポキシ樹脂などを挙げることができる。なかでも耐光性の点で、脂環式エポキシ樹脂が好適である。 (B) Examples of non-aromatic epoxy resins having two or more epoxy groups per molecule include alicyclic epoxy resins such as (3,4-epoxycyclohexane) methyl 3 ′, 4′-epoxycyclohexyl carboxylate; Hydrogen aromatic rings such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, aralkyl type epoxy resin and biphenyl aralkyl type epoxy resin Examples include a hydrogenated epoxy resin added; a dicyclopentadiene epoxy resin. Of these, alicyclic epoxy resins are preferred in terms of light resistance.
(B)エポキシ樹脂の配合量は、(A)成分と(B)成分の合計100質量部に対して50質量部、好ましくは40質量部、以下である。50質量部を超えると、耐光性が低くなる傾向がある。 (B) The compounding quantity of an epoxy resin is 50 mass parts with respect to a total of 100 mass parts of (A) component and (B) component, Preferably it is 40 mass parts or less. If it exceeds 50 parts by mass, the light resistance tends to be low.
(C)硬化剤としては、任意のエポキシ樹脂の硬化剤を使用することができ、アミン系硬化剤、フェノール系硬化剤、酸無水物系硬化剤が挙げられる。好ましくは、酸無水物系硬化剤が使用される。酸無水物系硬化剤としては、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、3−メチル−ヘキサヒドロ無水フタル酸、4−メチル−ヘキサヒドロ無水フタル酸、あるいは3−メチル−ヘキサヒドロ無水フタル酸と4−メチル−ヘキサヒドロ無水フタル酸との混合物、テトラヒドロ無水フタル酸、無水ナジック酸、無水メチルナジック酸、ノルボルナン−2,3−ジカルボン酸無水物、メチルノルボルナン−2,3−ジカルボン酸無水物などを挙げることができる。 (C) As a hardening | curing agent, the hardening | curing agent of arbitrary epoxy resins can be used, An amine type hardening | curing agent, a phenol type hardening | curing agent, and an acid anhydride type hardening | curing agent are mentioned. Preferably, an acid anhydride curing agent is used. Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl-hexahydrophthalic anhydride, Or a mixture of 3-methyl-hexahydrophthalic anhydride and 4-methyl-hexahydrophthalic anhydride, tetrahydrophthalic anhydride, nadic anhydride, methyl nadic anhydride, norbornane-2,3-dicarboxylic anhydride, methyl norbornane- 2,3-dicarboxylic anhydride and the like can be mentioned.
(C)硬化剤の配合量は、組成物中の(A)成分と(B)成分のエポキシ基の合計1モルに対して0.4〜1.5モル、即ち、全エポキシ樹脂1当量に対して硬化剤0.4〜1.5当量、好ましくは、0.5〜1.0当量、である。 (C) The compounding quantity of a hardening | curing agent is 0.4-1.5 mol with respect to the total of 1 mol of the epoxy group of (A) component in a composition, and (B) component, ie, 1 epoxy of all the epoxy resins. The curing agent is 0.4 to 1.5 equivalents, preferably 0.5 to 1.0 equivalents.
(D)硬化触媒としては、テトラブチルホスホニウムO,O−ジエチルホスホロジチオエート、テトラフェニルホスホニウムテトラフェニルボレートなどの第四級ホスホニウム塩、トリフェニルフォスフィン、ジフェニルフォスフィン等の有機フォスフィン系硬化触媒、1,8−ジアザビシクロ(5,4,0)ウンデセン−7、トリエタノールアミン、ベンジルジメチルアミン等の三級アミン系硬化触媒、2−メチルイミダゾール、2−フェニル−4−メチルイミダゾールなどのイミダゾール類などを挙げることができ、なかでも第四級ホスホニウム塩が好ましい。 (D) Examples of curing catalysts include quaternary phosphonium salts such as tetrabutylphosphonium O, O-diethyl phosphorodithioate and tetraphenylphosphonium tetraphenylborate, and organic phosphine-based curing catalysts such as triphenylphosphine and diphenylphosphine. , 1,8-diazabicyclo (5,4,0) undecene-7, tertiary amine curing catalysts such as triethanolamine and benzyldimethylamine, imidazoles such as 2-methylimidazole and 2-phenyl-4-methylimidazole Among them, a quaternary phosphonium salt is preferable.
(D)硬化触媒の配合量は、(A)、(B)及び(C)成分の合計100質量部に対して、
0.01〜3質量部である。硬化触媒の配合量が前記下限値より少ないと、エポキシ樹脂と硬化剤との反応を促進する効果を十分に得ることができないおそれがある。一方、硬化触媒の配合量が前記上限値より多いと、硬化時やリフロー試験時の変色の原因となるおそれがある。
(D) The compounding amount of the curing catalyst is 100 parts by mass in total of the components (A), (B) and (C).
It is 0.01-3 mass parts. If the amount of the curing catalyst is less than the lower limit, the effect of promoting the reaction between the epoxy resin and the curing agent may not be sufficiently obtained. On the other hand, if the blending amount of the curing catalyst is larger than the upper limit value, it may cause discoloration during curing or a reflow test.
上記各成分に加えて、本発明の目的を逸脱しない範囲で、慣用の添加剤、例えば酸化防止剤、変色防止剤、劣化防止剤、シリカなどの無機充填剤、シラン系カップリング剤、変性剤、可塑剤、希釈剤等を配合してよい。また、波長変更するための蛍光体や酸化チタン微粉末、シリカなどのような光散乱剤などを添加することもできる。 In addition to the above components, conventional additives such as antioxidants, anti-discoloring agents, anti-degradation agents, inorganic fillers such as silica, silane coupling agents, and modifiers may be used without departing from the object of the present invention. Plasticizers, diluents and the like may be blended. Moreover, a phosphor for changing the wavelength, a titanium oxide fine powder, a light scattering agent such as silica, and the like can be added.
本発明の組成物は、(A)シリコーン樹脂、(B)エポキシ樹脂、(C)硬化剤および(D)硬化触媒および必要により各種の添加剤を配合して、溶融混合することで調製することができる。溶融混合は、公知の方法でよく、例えば、上記の成分をリアクターに仕込み、バッチ式にて溶融混合する方法、また上記の成分をニーダーや熱三本ロールなどの混練機に投入して、連続的に溶融混合する方法が挙げられる。 The composition of the present invention is prepared by blending (A) a silicone resin, (B) an epoxy resin, (C) a curing agent and (D) a curing catalyst and various additives as required, and melt-mixing them. Can do. Melt mixing may be a known method, for example, the above components are charged into a reactor and melt mixed in a batch system, or the above components are put into a kneader such as a kneader or a hot three roll to continuously The method of melt-mixing can be mentioned.
得られた溶融混合物を鋳型に注入した状態で所定の温度下において、Bステージ化して固形化した上で使用に供することも可能である。 It is also possible to use the molten mixture obtained by injecting the molten mixture into a mold at a predetermined temperature after being B-staged and solidified.
本発明の組成物で発光半導体を封止する態様は特に制限されるものではなく、例えば、開口部を有する筐体内に配置された発光半導体を覆って筐体内に組成物を充填し、硬化させて封止することができる。また、マトリックス化された基板上にLEDを搭載したものを、印刷法、トランスファー成型、インジェクション成型、圧縮成形などにより封止することもできる。LEDなどの発光半導体素子をポッティングやインジェクションなどで被覆する場合、本発明の組成物は液状であることが好ましく、25℃の回転粘度計による測定値として10〜1,000,000mPa・s、特には100〜1,000,000mPa・s程度が好ましい。一方、トランスファー成型、等で発光半導体装置を製造する場合には、上記の液状樹脂を使用することもできるが、液状樹脂を増粘させて固形化(Bステージ化)し、ペレット化した後、成型することでも製造することができる。 The mode of sealing the light emitting semiconductor with the composition of the present invention is not particularly limited. For example, the light emitting semiconductor disposed in the housing having the opening is covered, and the housing is filled with the composition and cured. And can be sealed. In addition, an LED mounted on a matrix substrate can be sealed by a printing method, transfer molding, injection molding, compression molding, or the like. When a light-emitting semiconductor element such as an LED is coated by potting or injection, the composition of the present invention is preferably in a liquid state, and a measured value by a rotational viscometer at 25 ° C. is preferably 10 to 1,000,000 mPa · s. Is preferably about 100 to 1,000,000 mPa · s. On the other hand, when manufacturing a light emitting semiconductor device by transfer molding, etc., the above liquid resin can be used, but after thickening the liquid resin to solidify (B stage), pelletize, It can also be manufactured by molding.
以下、実施例により本発明を説明するが、本発明はこれらの実施例に限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these Examples.
<比較合成例1:(A)分岐シリコーン樹脂の合成>
反応容器に、セロキサイド−2000(ダイセル化学工業社製)112.71g(0.908モル)、トルエン208ml、塩化白金酸2%オクチルアルコール溶液を(Pt量20ppm)仕込んだ後、下記式(a)で表されるオルガノポリシロキサン(n=1)100g(0.303モル)、トルエン61mlを滴下し、16時間加熱還流した。
反応終了後、減圧下トルエンを除去し、ろ過を行い目的の樹脂(樹脂1)を得た。樹脂1のエポキシ当量は262g/eqであった。
< Comparative synthesis example 1: (A) Synthesis of branched silicone resin>
After charging 112.71 g (0.908 mol) of Celoxide-2000 (manufactured by Daicel Chemical Industries), 208 ml of toluene, and a 2% octyl alcohol solution of chloroplatinic acid (Pt amount 20 ppm) in a reaction vessel, the following formula (a) 100 g (0.303 mol) of organopolysiloxane (n = 1) and 61 ml of toluene were added dropwise, and the mixture was heated to reflux for 16 hours.
After completion of the reaction, toluene was removed under reduced pressure, followed by filtration to obtain the desired resin (Resin 1). The epoxy equivalent of resin 1 was 262 g / eq.
上式(a)で表されるオルガノポリシロキサンの1H−NMR(300MHz, CDCl3)では、0.38ppm、4.98ppm(Si−H)、7.50ppm、及び7.75ppmにピークが観察された。一方、樹脂1の1H−NMR(300MHz, CDCl3)では、0.09ppm、0.51ppm、1.15ppm、1.29ppm、2.12ppm、3.12ppm、及び7.24ppmにピークが観察され、末端に脂環式エポキシ基が結合されていることを確認した。また、樹脂1の29Si−NMR(60MHz, CDCl3)では、−76〜−80ppm(PhSiO3/2)、及び8〜11ppm(Me2SiO)にピークが観察され、縮合反応により調製される樹脂で通常観察されるアルコキシ基が存在しないことを確認した。
In 1 H-NMR (300 MHz, CDCl 3 ) of the organopolysiloxane represented by the above formula (a), peaks are observed at 0.38 ppm, 4.98 ppm (Si—H), 7.50 ppm, and 7.75 ppm. It was done. On the other hand, in 1 H-NMR (300 MHz, CDCl 3 ) of resin 1, peaks are observed at 0.09 ppm, 0.51 ppm, 1.15 ppm, 1.29 ppm, 2.12 ppm, 3.12 ppm, and 7.24 ppm. It was confirmed that an alicyclic epoxy group was bonded to the terminal. Further, in 29 Si-NMR (60 MHz, CDCl 3 ) of resin 1, peaks are observed at −76 to −80 ppm (PhSiO 3/2 ) and 8 to 11 ppm (Me 2 SiO), and the resin 1 is prepared by a condensation reaction. It was confirmed that there were no alkoxy groups normally observed in the resin.
<合成例2:(A)分岐シリコーン樹脂の合成>
反応容器に、セロキサイド−2000(ダイセル化学工業社製)74.51g(0.600モル)、トルエン150ml、塩化白金酸2%オクチルアルコール溶液を(Pt量20ppm)仕込んだ後、上記式(a)で表されるオルガノポリシロキサン(n=5)161g(0.200モル)、トルエン40mlを滴下し、16時間加熱還流した。反応終了後、減圧下トルエンを除去し、ろ過を行い目的の樹脂(樹脂2)を得た。樹脂2のエポキシ当量は546g/eqであった。
<Synthesis Example 2: (A) Synthesis of Branched Silicone Resin>
A reaction vessel was charged with 74.51 g (0.600 mol) of Celoxide-2000 (manufactured by Daicel Chemical Industries), 150 ml of toluene, and a 2% octyl alcohol solution of chloroplatinic acid (Pt amount 20 ppm), and then the above formula (a) 161 g (0.200 mol) of organopolysiloxane (n = 5) and 40 ml of toluene were added dropwise, and the mixture was heated to reflux for 16 hours. After completion of the reaction, toluene was removed under reduced pressure, and filtration was performed to obtain the desired resin (resin 2). The epoxy equivalent of resin 2 was 546 g / eq.
<合成例3:(A)分岐シリコーン樹脂の合成>
反応容器に、セロキサイド−2000(ダイセル化学工業社製)74.51g(0.600モル)、トルエン150ml、塩化白金酸2%オクチルアルコール溶液を(Pt量20ppm)仕込んだ後 、上記式(a)で表されるオルガノポリシロキサン(n=10)520g(0.200モル)、トルエン100mlを滴下し、16時間加熱還流した。反応終了後、減圧下トルエンを除去し、ろ過を行い目的の樹脂(樹脂3)を得た。樹脂3のエポキシ当量は1023g/eqであった。
<Synthesis Example 3: (A) Synthesis of Branched Silicone Resin>
A reaction vessel was charged with 74.51 g (0.600 mol) of Celoxide-2000 (manufactured by Daicel Chemical Industries), 150 ml of toluene, and a 2% octyl alcohol solution of chloroplatinic acid (Pt amount 20 ppm), and then the above formula (a) 520 g (0.200 mol) of organopolysiloxane (n = 10) and 100 ml of toluene were added dropwise, and the mixture was heated to reflux for 16 hours. After completion of the reaction, toluene was removed under reduced pressure, followed by filtration to obtain the desired resin (Resin 3). The epoxy equivalent of the resin 3 was 1023 g / eq.
<比較合成例4:(A)分岐シリコーン樹脂の合成>
反応容器に、セロキサイド−2000(ダイセル化学工業社製)99.35g(0.800モル)、トルエン180ml、塩化白金酸2%オクチルアルコール溶液を(Pt量20ppm)仕込んだ後、下記式(b)で表されるオルガノポリシロキサン84g(0.200モル)、トルエン40mlを滴下し、加熱還流した。反応終了後、減圧下トルエンを除去し、ろ過を行い目的の樹脂(樹脂4)を得た。樹脂4のエポキシ当量は269g/eqであった。
< Comparative Synthesis Example 4: (A) Synthesis of Branched Silicone Resin>
After charging 99.35 g (0.800 mol) of Celoxide 2000 (manufactured by Daicel Chemical Industries, Ltd.), 180 ml of toluene, and a 2% octyl alcohol solution of chloroplatinic acid (Pt amount 20 ppm) into a reaction vessel, the following formula (b) The organopolysiloxane 84g (0.200 mol) represented by these and 40 ml of toluene were dripped, and it heated and refluxed. After completion of the reaction, toluene was removed under reduced pressure, followed by filtration to obtain the desired resin (resin 4). The epoxy equivalent of Resin 4 was 269 g / eq.
上式(b)で表されるオルガノポリシロキサンの1H−NMR(300MHz, CDCl3)では、0.31ppm、4.85ppm(Si−H)、7.39ppm、7.76ppmにピークが観察された。一方、樹脂4の1H−NMR(300MHz, CDCl3)では、0.02ppm、0.43ppm、1.07ppm、1.53ppm、1.90ppm、2.06ppm、3.10ppm、7.17ppmにピークが観察され、末端に脂環式エポキシ基が結合されていることを確認した。樹脂4の29Si−NMR(60MHz, CDCl3)では、−74〜−83ppm(PhSiO3/2)、7〜11ppm(Me2SiO)にピークが観察され、縮合反応により調製される樹脂で通常観察されるアルコキシ基が存在しないことを確認した。
In 1 H-NMR (300 MHz, CDCl 3 ) of the organopolysiloxane represented by the above formula (b), peaks were observed at 0.31 ppm, 4.85 ppm (Si—H), 7.39 ppm, and 7.76 ppm. It was. On the other hand, 1 H-NMR (300 MHz, CDCl 3 ) of Resin 4 has peaks at 0.02 ppm, 0.43 ppm, 1.07 ppm, 1.53 ppm, 1.90 ppm, 2.06 ppm, 3.10 ppm, 7.17 ppm. Was observed, and it was confirmed that an alicyclic epoxy group was bonded to the terminal. In 29 Si-NMR (60 MHz, CDCl 3 ) of resin 4, peaks are observed at −74 to −83 ppm (PhSiO 3/2 ) and 7 to 11 ppm (Me 2 SiO), and are usually prepared by a condensation reaction. It was confirmed that there were no observed alkoxy groups.
<比較合成例5:縮合反応による分岐シリコーン樹脂の調製>
反応容器に、MeO(Me)2SiO(Me2SiO)nSi(Me)2OMe (n=約1.5個)596.82g(2.10モル)、フェニルトリメトキシシラン(信越化学工業社製KBM103)95.34g(0.70モル)、イソプロピルアルコール1250mlを仕込んだ後、水酸化テトラメチルアンモニウムの25%水溶液21.75g、水195.75gを添加し、室温で3時間攪拌した。反応終了後、系内にトルエン1250mlを入れ、リン酸二水素ナトリウム水溶液で中和した。分液漏斗を用いて、残渣を熱水にて洗浄した。減圧下トルエンを除去してオリゴマーを得た。さらにオリゴマーに、3−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン(信越化学工業社製KBM303)517.44g(2.10モル)、イソプロピルアルコール600mlを仕込んだ後、水酸化テトラメチルアンモニウムの25%水溶液21.75g、水195.75gを添加し、室温で3時間攪拌した。反応終了後、系内にトルエン1250mlを入れ、リン酸二水素ナトリウム水溶液で中和した。分液漏斗を用いて、残渣を熱水にて洗浄した。減圧下トルエンを除去して目的の樹脂(「樹脂5」とする)を得た。樹脂5のエポキシ当量は441g/eqであった。
また、樹脂5の29Si−NMR(60MHz, CDCl3)では、−64〜−56ppm(PhSiO3/2)、−52〜−44ppm(完全縮合T単位Si部分)、−41〜−36ppm(アルコキシ含有T単位Si部分)、−4〜3ppm(完全縮合D単位Si部分)、6〜10ppm(アルコキシ含有D単位Si部分)にピークが観察され、アルコキシ基が残留していることを確認した。
<Comparative Synthesis Example 5: Preparation of branched silicone resin by condensation reaction>
In a reaction vessel, MeO (Me) 2 SiO (Me 2 SiO) n Si (Me) 2 OMe (n = about 1.5) 596.82 g (2.10 mol), phenyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd.) (KBM103) 95.34 g (0.70 mol) and 1250 ml of isopropyl alcohol were charged, 21.75 g of a 25% aqueous solution of tetramethylammonium hydroxide and 195.75 g of water were added, and the mixture was stirred at room temperature for 3 hours. After completion of the reaction, 1250 ml of toluene was put into the system and neutralized with an aqueous sodium dihydrogen phosphate solution. The residue was washed with hot water using a separatory funnel. Toluene was removed under reduced pressure to obtain an oligomer. Further, 517.44 g (2.10 mol) of 3- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (KBM303, Shin-Etsu Chemical Co., Ltd.) and 600 ml of isopropyl alcohol were added to the oligomer, and then tetramethylammonium hydroxide was added. 21.75 g of 25% aqueous solution and 195.75 g of water were added, and the mixture was stirred at room temperature for 3 hours. After completion of the reaction, 1250 ml of toluene was put into the system and neutralized with an aqueous sodium dihydrogen phosphate solution. The residue was washed with hot water using a separatory funnel. Toluene was removed under reduced pressure to obtain the desired resin (referred to as “resin 5”). The epoxy equivalent of resin 5 was 441 g / eq.
Further, in 29 Si-NMR (60 MHz, CDCl 3 ) of Resin 5, −64 to −56 ppm (PhSiO 3/2 ), −52 to −44 ppm (fully condensed T unit Si portion), −41 to −36 ppm (alkoxy) Peaks were observed at the contained T unit Si portion), -4 to 3 ppm (fully condensed D unit Si portion), and 6 to 10 ppm (alkoxy containing D unit Si portion), and it was confirmed that an alkoxy group remained.
得られた樹脂及び以下の成分を用いて、組成物を調製した。
(B)エポキシ樹脂:(3,4−エポキシシクロヘキサン)メチル3’,4’−エポキシシクロヘキシルカルボキシレート(セロキサイド2021P、ダイセル工業(株)製)
(C)硬化剤:メチルヘキサヒドロ無水フタル酸(MH、新日本理化(株)製)
(D)硬化触媒:有機ホスホニウム塩(UCAT−5003、サンアプロ(株)製)
接着助剤:3−メルカプトプロピルメチルジメトキシシラン(KBM−803、信越化学工業(株)製)
A composition was prepared using the obtained resin and the following components.
(B) Epoxy resin: (3,4-epoxycyclohexane) methyl 3 ′, 4′-epoxycyclohexylcarboxylate (Celoxide 2021P, manufactured by Daicel Industries, Ltd.)
(C) Hardener: Methylhexahydrophthalic anhydride (MH, manufactured by Shin Nippon Rika Co., Ltd.)
(D) Curing catalyst: Organic phosphonium salt (UCAT-5003, manufactured by San Apro Co., Ltd.)
Adhesion aid: 3-mercaptopropylmethyldimethoxysilane (KBM-803, manufactured by Shin-Etsu Chemical Co., Ltd.)
<実施例2、3、比較例1〜3>
表1に示す処方(質量部)に従い、組成物を調製した。
得られた組成物を用いて、100℃で2時間、さらにポストキュアを150℃4時間行って、厚み5mmの棒状硬化物を得た。この棒状硬化物を用いて、外観、曲げ弾性率及び曲げ強度(JIS K−6911)、耐光試験後の外観について評価した。耐光試験は初期の400nmにおける透過率を100%としたときの、12時間UV照射(高圧水銀灯 30mW/cm2、365nm)後の透過率を求めた。また、23℃での初期粘度に対する23℃/8hr保存後の粘度比を測定した。結果を表1に示す。
<Examples 2 and 3 and Comparative Examples 1 to 3 >
A composition was prepared according to the formulation (parts by mass) shown in Table 1.
The obtained composition was subjected to post-cure at 100 ° C. for 2 hours and further at 150 ° C. for 4 hours to obtain a bar-shaped cured product having a thickness of 5 mm. Using this rod-shaped cured product, the appearance, bending elastic modulus and bending strength (JIS K-6911), and the appearance after the light resistance test were evaluated. In the light resistance test, the transmittance after 12 hours of UV irradiation (high pressure mercury lamp 30 mW / cm 2 , 365 nm) when the transmittance at the initial 400 nm was 100% was determined. Further, the viscosity ratio after storage at 23 ° C./8 hr to the initial viscosity at 23 ° C. was measured. The results are shown in Table 1.
LED装置
実施例2、3及び比較例1の組成物を用いて、以下の方法でLED装置を各3個ずつ作成した。厚さ1mm、一辺が3mmで開口部が直径2.6mm、底辺部が銀メッキされたLED用プレモールドパッケージにInGaN系青色発光素子を銀ペーストにより固定した。次に外部電極と発光素子を金ワイヤーにて接続した。各組成物をパッケージ開口部に注入した。100℃で1時間、さらに150℃で2時間硬化させてLED装置を作成した。作成したLED装置を用い、下記条件での温度サイクル試験と、65℃/95%RH下で3000時間LED点灯試験を行い、パッケージ界面の接着不良、クラックの有無、並びに変色の有無を目視観察した。結果を表2に示す。
Using the compositions of LED device Examples 2 and 3 and Comparative Example 1, three LED devices were prepared by the following method. An InGaN-based blue light-emitting element was fixed with a silver paste on a pre-molded package for LED having a thickness of 1 mm, a side of 3 mm, an opening of 2.6 mm in diameter, and a bottom of which was silver-plated. Next, the external electrode and the light emitting element were connected by a gold wire. Each composition was injected into the package opening. It was cured at 100 ° C. for 1 hour and further at 150 ° C. for 2 hours to produce an LED device. Using the created LED device, a temperature cycle test under the following conditions and an LED lighting test at 65 ° C./95% RH for 3000 hours were performed, and the adhesion failure of the package interface, the presence of cracks, and the presence or absence of discoloration were visually observed. . The results are shown in Table 2.
表1から分かるように、縮合反応により得られた樹脂5を含む比較例1の組成物は、粘度上昇が顕著であった。また、表2から分かるように、比較例1の組成物から得られたパッケージは、実施例の組成物から得られた硬化物に比べて耐熱衝撃性、耐光性に劣った。 As can be seen from Table 1, in the composition of Comparative Example 1 containing the resin 5 obtained by the condensation reaction, the increase in viscosity was remarkable. Further, as can be seen from Table 2, the package obtained from the composition of Comparative Example 1 was inferior in thermal shock resistance and light resistance as compared with the cured products obtained from the compositions of Examples.
本発明の光半導体素子止封止用組成物はポットライフが長く、耐光性、耐熱衝撃性に優れた光半導体装置を形成するために有用である。 The composition for sealing an optical semiconductor element of the present invention has a long pot life and is useful for forming an optical semiconductor device excellent in light resistance and thermal shock resistance.
Claims (4)
(A)不飽和基含有エポキシ化合物と、SiH基を有するオルガノポリシロキサンとの付加反応により調製され下記式(2)で示される分岐シリコーン樹脂 100質量部
(B)1分子当り2個以上のエポキシ基を有する脂環式エポキシ樹脂 (A)成分と(B)成分の合計100質量部に対して50質量部以下
(C)硬化剤 (A)成分と(B)成分のエポキシ基の合計1モルに対し該エポキシ基と反応性の基が0.4〜1.5モルとなる量
(D)硬化触媒 (A)成分、(B)成分及び(C)成分の合計100質量部に対し0.01〜3質量部 The composition for optical semiconductor element sealing containing following (A), (B), (C) and (D).
(A) an unsaturated group-containing epoxy compounds and addition reaction is prepared from the following equation with the organopolysiloxane having a SiH group (2) branched silicone resins to 100 parts by mass of Ru indicated by
(B) Alicyclic epoxy resin having two or more epoxy groups per molecule (A) Component and (B) 50 parts by mass or less (C) Curing agent (A) component with respect to 100 parts by mass in total (B) Amount of the epoxy group and reactive group to be 0.4 to 1.5 mol with respect to 1 mol of the total epoxy group of component (D) Curing catalyst (A) Component, (B) component and (C ) 0.01-3 parts by mass with respect to 100 parts by mass in total of the components
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JP3851441B2 (en) * | 1998-04-23 | 2006-11-29 | 日東電工株式会社 | Epoxy resin composition for optical semiconductor element sealing and optical semiconductor device |
DE10107985C1 (en) * | 2001-02-19 | 2002-04-18 | 3M Espe Ag | Polymerizable formulation used for coating and/or bonding substrates or as dental formulation, contains organosilicon compound with aliphatic and cycloaliphatic epoxide groups, filler and initiator, inhibitor and/or accelerator |
JP4198091B2 (en) * | 2004-06-02 | 2008-12-17 | 旭化成株式会社 | Resin composition for sealing light emitting device |
US20070299165A1 (en) * | 2006-06-27 | 2007-12-27 | Gelcore Llc | Phenyl-containing silicone epoxy formulations useful as encapsulants for LED applications |
US20080160317A1 (en) * | 2006-12-29 | 2008-07-03 | Deborah Ann Haitko | Optoelectronic device |
WO2012066743A1 (en) | 2010-11-15 | 2012-05-24 | コニカミノルタオプト株式会社 | Hard coating film and image display device |
EP3378313A1 (en) | 2011-03-23 | 2018-09-26 | Basf Se | Compositions containing polymeric, ionic compounds comprising imidazolium groups |
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KR101751541B1 (en) | 2017-06-27 |
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