JP5284829B2 - Plating equipment cooling device and high-speed continuous plating equipment - Google Patents

Plating equipment cooling device and high-speed continuous plating equipment Download PDF

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JP5284829B2
JP5284829B2 JP2009052930A JP2009052930A JP5284829B2 JP 5284829 B2 JP5284829 B2 JP 5284829B2 JP 2009052930 A JP2009052930 A JP 2009052930A JP 2009052930 A JP2009052930 A JP 2009052930A JP 5284829 B2 JP5284829 B2 JP 5284829B2
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正利 真嶋
信二 稲澤
忠拓 貝吹
晃久 細江
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Sumitomo Electric Industries Ltd
Sumitomo Electric Printed Circuits Inc
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Description

本発明はめっき処理装置用冷却装置および高速連続めっき処理装置に関し、特に高速連続めっき処理時にメッキ液や基板の温度が上昇することを抑制するめっき処理装置用冷却装置およびこのようなめっき処理装置用冷却装置を備えた高速連続めっき処理装置に関する。   TECHNICAL FIELD The present invention relates to a cooling apparatus for a plating processing apparatus and a high-speed continuous plating processing apparatus, and more particularly to a cooling apparatus for a plating processing apparatus that suppresses an increase in the temperature of a plating solution or a substrate during high-speed continuous plating processing. The present invention relates to a high-speed continuous plating apparatus equipped with a cooling device.

フレキシブルプリント回路(以下FPCという)等の基板の電気回路は、一般に基板の表面に電気銅めっき等のめっきを施すことによって形成される。具体的な方法としては、従来より、ロール状の基板を負に帯電させた巻き出し側の給電ローラーと巻き取り側の給電ローラーの回転によりめっき槽中のアノード(陽極)の間を高速で搬送させつつ、めっき液の噴流を基板に向けて噴出させると共に、高電流を基板に印加することによりめっきを行う方法が広く採用されている。   An electric circuit of a substrate such as a flexible printed circuit (hereinafter referred to as FPC) is generally formed by performing plating such as electrolytic copper plating on the surface of the substrate. As a specific method, conventionally, the roll-shaped substrate is negatively charged, and the feed roller on the unwinding side and the feed roller on the winding side are rotated at high speed between the anodes (anodes) in the plating tank. In addition, a method of performing plating by ejecting a jet of a plating solution toward a substrate and applying a high current to the substrate is widely adopted.

しかし、このように高速でめっきを行うこと、即ち、高電流を薄い基板に印加することは、めっき液や基板の温度上昇を招いてしまうため、均一なめっき層の形成が阻害されたり、めっき面が酸化されたりするという問題があった。   However, performing plating at such a high speed, that is, applying a high current to a thin substrate leads to an increase in the temperature of the plating solution and the substrate. There was a problem that the surface was oxidized.

このような問題に対処するために、基板に直接水を吹き付けたり、給電ローラーに水冷ジャケットを入れたりして、基板や給電ローラーを冷却することが行われており、具体的には、めっき装置にラミナーフローノズルを配設し、基板の表裏両面に水などを吹き付けることなどが示されている(特許文献1)。   In order to deal with such problems, water is directly sprayed on the substrate or a water cooling jacket is inserted into the power supply roller to cool the substrate and the power supply roller. It is shown that a laminar flow nozzle is disposed on the front and back surfaces of the substrate and sprayed with water or the like (Patent Document 1).

特開2001−288594JP 2001-288594 A

しかしながら、近年、10A/dmを超える大きな電流密度を用いたさらなる高速めっきの要請がなされており、めっき液や基板の温度上昇が一層大きくなるため、冷却に大量の水が必要となり、コストの増加のみならず、めっき液の濃度管理が困難になると言う問題が発生していた。 However, in recent years, there has been a demand for further high-speed plating using a large current density exceeding 10 A / dm 2 , and since the temperature rise of the plating solution and the substrate is further increased, a large amount of water is required for cooling, and the cost is reduced. In addition to the increase, there has been a problem that it becomes difficult to control the concentration of the plating solution.

そこで、本発明は、FPC等の基板に対して高速めっきを行う際に、大量の水を用いることなく基板や給電ローラーを効率的に冷却することができるめっき装置用冷却装置およびこのようなめっき装置用冷却装置を備えた高速連続めっき処理装置を提供することを課題とする。   Therefore, the present invention provides a cooling device for a plating apparatus and such plating that can efficiently cool a substrate and a power supply roller without using a large amount of water when performing high-speed plating on a substrate such as an FPC. It aims at providing the high-speed continuous plating processing apparatus provided with the cooling device for apparatuses.

本発明者は、鋭意検討の結果、以下に示す各請求項の発明により、上記課題が解決できることを見出し、本発明を完成するに至った。   As a result of intensive studies, the inventor has found that the above-described problems can be solved by the inventions of the following claims, and has completed the present invention.

請求項1に記載の発明は、
高速連続めっき処理装置のめっき槽の手前に配置されて前記高速連続めっき処理装置を冷却するめっき処理装置用冷却装置であって、
冷却用の水を補給する水補給槽と、
前記水補給槽より水を吸水する毛細管吸水体と、
前記毛細管吸水体の一端に接触して設けられて、前記水補給槽から前記毛細管吸水体に吸水された水を霧化して、めっき処理装置の冷却対象に噴霧させる超音波振動素子と、
前記超音波振動素子に超音波振動を付与する超音波振動発信器と
を備えていることを特徴とするめっき処理装置用冷却装置である。
The invention described in claim 1
A cooling device for a plating apparatus that is disposed in front of a plating tank of a high-speed continuous plating apparatus and cools the high-speed continuous plating apparatus,
A water replenishment tank for replenishing cooling water;
A capillary water absorber that absorbs water from the water supply tank;
An ultrasonic vibration element that is provided in contact with one end of the capillary absorbent body, atomizes the water absorbed by the capillary absorbent body from the water replenishing tank, and sprays the water to be cooled in the plating apparatus;
An apparatus for cooling a plating apparatus, comprising: an ultrasonic vibration transmitter that applies ultrasonic vibration to the ultrasonic vibration element.

本請求項の発明においては、超音波振動素子の超音波振動を毛細管吸水体に伝えることにより、毛細管吸水体に含まれた水が霧化して、基板や給電ローラーなどの冷却対象に噴霧されるため、少ない水の量で効率的に基板や給電ローラーなどを冷却して、メッキ液や基板の温度が上昇することを抑制できる。その結果、FPC等の基板に対して高速めっきを行う場合であっても、冷却用水の使用量を大幅に減少させ、コストを抑制することができる。さらに、基板表面に付着する水量が少ないため、めっき液の濃度管理が容易となる。   In the invention of this claim, by transmitting the ultrasonic vibration of the ultrasonic vibration element to the capillary absorbent body, the water contained in the capillary absorbent body is atomized and sprayed onto a cooling target such as a substrate or a power supply roller. Therefore, it is possible to efficiently cool the substrate, the power supply roller, and the like with a small amount of water, and to prevent the temperature of the plating solution and the substrate from rising. As a result, even when high-speed plating is performed on a substrate such as an FPC, the amount of cooling water used can be greatly reduced and costs can be suppressed. Furthermore, since the amount of water adhering to the substrate surface is small, it is easy to manage the concentration of the plating solution.

超音波振動素子および超音波振動発信器としては、毛細管吸水体を介して水を霧化して、噴霧するために充分なエネルギーを与えることができるものであればよく、めっき処理装置の運転状況に応じて適宜選択することができる。   Any ultrasonic vibration element and ultrasonic vibration transmitter may be used as long as they can atomize water through a capillary water absorbent and give sufficient energy for spraying. It can be appropriately selected depending on the case.

毛細管吸水体とは、毛細管機能を備えた吸水体を指し、一端を水補給槽へ浸漬した際、毛細管現象により吸水する特性を有する材料であれば、種類は限定されない。具体的には、脱脂綿を棒状に成形したものや、フェルト、連続気泡を有する合成樹脂の多孔質体などを好ましく用いることができる。   The capillary water-absorbing body refers to a water-absorbing body having a capillary function, and the type is not limited as long as it is a material that absorbs water by capillary action when one end is immersed in a water supply tank. Specifically, it is preferable to use a cotton-molded absorbent cotton, a felt, a synthetic resin porous body having open cells, and the like.

水補給槽は、前記の超音波振動により霧化、噴霧された水を毛細管吸水体に補給するために設けられており、容量は霧化に伴う消費量を考慮して、適宜定めることができる。   The water replenishing tank is provided for replenishing the capillary water-absorbing body with the water atomized and sprayed by the ultrasonic vibration, and the capacity can be appropriately determined in consideration of the amount of consumption accompanying the atomization. .

請求項2に記載の発明は、
10A/dmを超える電流密度で基板へのめっきを行う高速連続めっき処理装置であって、
銅イオン供給部、めっき槽、給電部を備えており、
前記めっき槽は、銅イオン噴流部および不溶性陽極部を備えており、
前記銅イオン供給部は、めっき液に酸化銅粉を溶解する酸化銅粉溶解槽を備えており、
前記銅イオン噴流部は、前記銅イオン供給部において調製された前記めっき液を基板面に向けて噴出させてめっき槽に供給する噴流ポンプを備えており、
さらに、請求項1に記載のめっき処理装置用冷却装置が、前記めっき槽の手前において、前記給電部と前記めっき槽との間に、前記基板および/または前記給電部と対向して配置されている
ことを特徴とする高速連続めっき処理装置である。
The invention described in claim 2
A high-speed continuous plating apparatus that performs plating on a substrate at a current density exceeding 10 A / dm 2 ,
It has a copper ion supply part, a plating tank, and a power supply part.
The plating tank includes a copper ion jet part and an insoluble anode part,
The copper ion supply unit includes a copper oxide powder dissolving tank for dissolving copper oxide powder in a plating solution,
The copper ion jet section includes a jet pump that jets the plating solution prepared in the copper ion supply section toward the substrate surface and supplies the plating bath to the plating tank.
Furthermore, the cooling device for a plating processing apparatus according to claim 1 is disposed in front of the plating tank and between the power supply unit and the plating tank so as to face the substrate and / or the power supply unit. It is a high-speed continuous plating apparatus characterized by

上記の構成のような10A/dmを超える電流密度で基板へのめっきを行う高速連続めっき処理装置の場合、めっき液の噴流によるめっき液の抵抗や基板の高速搬送などにより、短時間にめっき液や基板の温度が上昇し易く、温度上昇を抑制するためには、大量の水を冷却対象に放出させる必要があるが、前記のめっき装置用冷却装置を採用することにより、少ない水の量で効率的にめっき液や基板の温度上昇を抑制することができ、冷却用水の使用量を大幅に減少させることができる。さらに、基板表面に付着する水量が少ないため、めっき液の濃度管理が容易となる。 In the case of a high-speed continuous plating apparatus that performs plating on a substrate at a current density exceeding 10 A / dm 2 as in the above configuration, plating can be performed in a short time due to the resistance of the plating solution due to the jet of the plating solution or high-speed conveyance of the substrate. The temperature of the liquid and the substrate is likely to rise, and in order to suppress the temperature rise, it is necessary to release a large amount of water to the object to be cooled. Thus, the temperature rise of the plating solution and the substrate can be efficiently suppressed, and the amount of cooling water used can be greatly reduced. Furthermore, since the amount of water adhering to the substrate surface is small, it is easy to manage the concentration of the plating solution.

めっき処理装置用冷却装置の配置は、めっき槽の手前でも後でもよく、また両方であってもよい。めっき槽の手前に基板や給電ローラーと対向して配置される場合には、めっき前の基板を冷却した状態でめっき槽に搬入することができるため、めっき液の温度上昇を抑制することができ、均一なめっきを行うことができる。   The arrangement of the cooling apparatus for the plating apparatus may be before or after the plating tank, or both. When it is placed in front of the plating tank and facing the substrate and the feed roller, it can be carried into the plating tank with the substrate before plating cooled, so the temperature rise of the plating solution can be suppressed. Uniform plating can be performed.

また、めっき槽の後に基板や給電ローラーと対向して配置される場合には、めっき後の基板をめっき槽から搬出された時点で直ちに冷却することができるため、めっき面が酸化されることがない。   In addition, if the substrate is disposed after the plating tank so as to face the power feeding roller, the plated surface can be immediately cooled when the substrate is unloaded from the plating tank, so that the plating surface may be oxidized. Absent.

また、めっき処理装置用冷却装置は、基板に対向させて基板を直接に冷却してもよく、給電部に対向させて給電部を冷却してもよい。   Further, the plating apparatus cooling apparatus may directly cool the substrate by facing the substrate, or may cool the power feeding unit by facing the power feeding unit.

本発明により、FPC等の基板に対して高速めっきを行う場合であっても、少ない水の量で効率的に基板や給電ローラーなどを冷却して、メッキ液や基板の温度が上昇することを抑制することができ、コストの増加を抑制することができる。さらに、基板表面に付着する水量が少ないため、めっき液の濃度管理が容易となる。   According to the present invention, even when high-speed plating is performed on a substrate such as an FPC, the temperature of the plating solution or the substrate is increased by efficiently cooling the substrate or the power supply roller with a small amount of water. It is possible to suppress the increase in cost. Furthermore, since the amount of water adhering to the substrate surface is small, it is easy to manage the concentration of the plating solution.

本発明の実施の形態の冷却装置の要部を概念的に示す模式図である。It is a schematic diagram which shows notionally the principal part of the cooling device of embodiment of this invention. 本発明の実施の形態の冷却装置を採用する高速連続めっき処理装置の要部を、概念的に示す模式図である。It is a schematic diagram which shows notionally the principal part of the high-speed continuous plating processing apparatus which employ | adopts the cooling device of embodiment of this invention. 本発明の実施の形態におけるめっき液の温度変化を示す図である。It is a figure which shows the temperature change of the plating solution in embodiment of this invention.

以下、本発明を実施の形態に基づいて説明する。なお、本発明は、以下の実施の形態に限定されるものではない。本発明と同一および均等の範囲内において、以下の実施の形態に対して種々の変更を加えることが可能である。   Hereinafter, the present invention will be described based on embodiments. Note that the present invention is not limited to the following embodiments. Various modifications can be made to the following embodiments within the same and equivalent scope as the present invention.

1.冷却装置
最初に、本実施の形態における冷却装置につき、図1を用いて説明する。図1は、冷却装置の要部を概念的に示す模式図であり、(a)は斜視図、(b)は断面図である。
1. First, the cooling device according to the present embodiment will be described with reference to FIG. 1A and 1B are schematic views conceptually showing a main part of a cooling device, wherein FIG. 1A is a perspective view and FIG. 1B is a cross-sectional view.

図1において、30は超音波発信器、31はノズル状の超音波振動素子である。そして、40は水補給槽、41は毛細管吸水体である。また、43は毛細管吸水体41から霧化された微小な水滴である。   In FIG. 1, 30 is an ultrasonic transmitter, and 31 is a nozzle-shaped ultrasonic vibration element. And 40 is a water replenishment tank, 41 is a capillary water absorbing body. Reference numeral 43 denotes minute water droplets atomized from the capillary water-absorbing body 41.

水補給槽40には水42が入っており、毛細管吸水体41の一端が浸漬されている。毛細管吸水体41は、毛細管現象によって水42を吸い上げ、保持している。なお、本実施の形態においては、毛細管吸水体41として外径10mm、長さ80mmの大きさの脱脂綿を用い、水42として純水を用いている。   The water replenishing tank 40 contains water 42 and one end of the capillary water-absorbing body 41 is immersed therein. The capillary water-absorbing body 41 sucks up and holds the water 42 by a capillary phenomenon. In the present embodiment, absorbent cotton having an outer diameter of 10 mm and a length of 80 mm is used as the capillary absorbent body 41, and pure water is used as the water 42.

図1に示すように、超音波発信器30で出力された超音波が、超音波振動素子31のノズル先端から毛細管吸水体41に伝達される。これにより、毛細管吸水体41に含まれていた水42は霧化されて微小な水滴43となり、図示しない基板や給電ローラーに向けて、黒塗り矢印の方向に噴霧される。   As shown in FIG. 1, the ultrasonic wave output from the ultrasonic transmitter 30 is transmitted from the nozzle tip of the ultrasonic vibration element 31 to the capillary water absorber 41. Thereby, the water 42 contained in the capillary water-absorbing body 41 is atomized into minute water droplets 43 and sprayed in the direction of a black arrow toward a substrate or a power supply roller (not shown).

噴霧された水滴43により、近傍の温度が低下し、また、基板や給電ローラーに水滴43が付着することにより、基板や給電ローラーが冷却される。   The sprayed water droplets 43 lower the temperature in the vicinity, and the water droplets 43 adhere to the substrate and the power feeding roller, thereby cooling the substrate and the power feeding roller.

2.高速連続めっき処理装置
次に、前記の冷却装置を採用する高速連続めっき処理装置につき、図2を用いて説明する。図2は、高速連続めっき処理装置の要部を概念的に示す模式図である。
2. High-speed continuous plating apparatus Next, a high-speed continuous plating apparatus that employs the cooling device will be described with reference to FIG. FIG. 2 is a schematic diagram conceptually showing a main part of the high-speed continuous plating apparatus.

図2に示すように、本実施の形態における高速連続めっき処理装置は、銅イオン供給部90、めっき槽70および給電ローラー51、52からなる給電部を備えており、めっき槽70は銅イオン噴流部80および不溶性陽極部60を備えている。   As shown in FIG. 2, the high-speed continuous plating apparatus in the present embodiment includes a power supply unit including a copper ion supply unit 90, a plating tank 70, and power supply rollers 51 and 52. The plating tank 70 is a copper ion jet. Part 80 and insoluble anode part 60 are provided.

銅イオン供給部90は、めっき槽70中のめっき液に銅イオンを供給するものであり、酸化銅粉溶解槽91、銅イオン補給槽92、溶存酸素低減槽93および濾過器94より構成されている。   The copper ion supply unit 90 supplies copper ions to the plating solution in the plating tank 70, and includes a copper oxide powder dissolution tank 91, a copper ion supply tank 92, a dissolved oxygen reduction tank 93, and a filter 94. Yes.

酸化銅粉溶解槽91には、所定濃度のめっき液が貯えられている。めっき液に酸化銅粉を投入し、攪拌して酸化銅粉を溶解させる。酸化銅粉が溶解して銅イオンとなることにより、銅イオンがめっき液中に供給される。   In the copper oxide powder dissolution tank 91, a plating solution having a predetermined concentration is stored. The copper oxide powder is put into the plating solution and stirred to dissolve the copper oxide powder. When the copper oxide powder dissolves to become copper ions, copper ions are supplied into the plating solution.

溶解後のめっき液の上澄みが、銅イオン補給槽92に送られた後、さらに溶存酸素低減槽93に送られ、窒素ガスなどの不活性ガスが吹き込まれる(バブリング)ことにより溶存酸素が低減される。そして、濾過器94で濾過された後、銅イオン噴流部80に送られる。   After the dissolution, the supernatant of the plating solution is sent to the copper ion replenishing tank 92 and further sent to the dissolved oxygen reducing tank 93, where the dissolved oxygen is reduced by blowing (bubbling) an inert gas such as nitrogen gas. The And after filtering with the filter 94, it is sent to the copper ion jet part 80. FIG.

銅イオン噴流部80は、配管パイプ81、噴流ポンプ82および噴流ノズル83より構成されている。配管パイプ81を経由して送られてきためっき液は、噴流ポンプ82により加圧されて、噴流ポンプ82の先端に設けられた噴流ノズル83の噴出口より基板10に向けて所定の噴流速度で噴出される。   The copper ion jet part 80 includes a pipe 81, a jet pump 82 and a jet nozzle 83. The plating solution sent via the piping pipe 81 is pressurized by the jet pump 82 and is jetted from the jet nozzle 83 provided at the tip of the jet pump 82 toward the substrate 10 at a predetermined jet velocity. Erupted.

噴流ポンプ82(および噴流ノズル83)は、基板10の表面および裏面に対向して交互にずれた位置に配置されている。このように、表裏で交互にずれた位置に配置することにより、基板の近傍に乱流が発生することがない。さらに、基板10がたわむなどの変形が殆ど発生しない。   The jet pump 82 (and the jet nozzle 83) are arranged at positions that are alternately shifted to face the front surface and the back surface of the substrate 10. In this way, by arranging the positions alternately on the front and back sides, turbulence does not occur in the vicinity of the substrate. Further, deformation such as the bending of the substrate 10 hardly occurs.

給電部は、巻き出し側の給電ローラー51と巻き取り側の給電ローラー52により構成されている。給電ローラー51、52は、基板10を負に帯電させて、めっき槽70内を走行させる。基板10が負に帯電されているため、その表面にめっき液中の銅イオンが電着して、銅めっきが行われる。   The power feeding unit includes a power feeding roller 51 on the unwinding side and a power feeding roller 52 on the winding side. The power feeding rollers 51 and 52 cause the substrate 10 to be negatively charged and travel in the plating tank 70. Since the substrate 10 is negatively charged, copper ions in the plating solution are electrodeposited on the surface, and copper plating is performed.

3.実施例
図2の矢印Aの上下2箇所および矢印Bの上下2箇所の計4箇所に、基板の上下方向から前記の冷却装置を基板に対向させて配置して、本実施例の高速連続めっき処理装置を作製した。そして、この高速連続めっき処理装置を用いて、厚さ20μmのポリイミド層11の表裏両面に厚さ9μm程度の銅層が形成され、さらに直径100μm程度のスルーホールが適宜形成された幅125mmの銅貼り基板(長さ:100m)に対して、25A/dmの電流密度、3時間のめっき処理を行った。
3. Example The high-speed continuous plating of the present example was performed by placing the cooling device facing the substrate from the vertical direction of the substrate at a total of four locations, two at the top and bottom of the arrow A and two at the top and bottom of the arrow B in FIG. A processing apparatus was produced. Then, using this high-speed continuous plating apparatus, a copper layer having a width of 125 mm in which a copper layer having a thickness of about 9 μm is formed on both the front and back surfaces of the polyimide layer 11 having a thickness of 20 μm and a through hole having a diameter of about 100 μm is appropriately formed. The pasted substrate (length: 100 m) was plated with a current density of 25 A / dm 2 for 3 hours.

なお、噴流ノズルからのめっき液の噴出は、噴流速度50km/hで噴出量20L/分(2dm当たりの流量)とし、不溶性陽極と基板との距離は15mmに設定した。そして、各冷却装置からの水の噴霧量が各々150ml/hとなるように、超音波の出力(85kHz、3W/m)を調整した。 The plating solution was ejected from the jet nozzle at a jet velocity of 50 km / h, an ejection amount of 20 L / min (flow rate per 2 dm 2 ), and the distance between the insoluble anode and the substrate was set to 15 mm. And the output (85 kHz, 3 W / m < 2 >) of an ultrasonic wave was adjusted so that the spray amount of the water from each cooling device might be 150 ml / h, respectively.

以上の構成によりめっき処理を行い、FPCの基板中央で給電ローラーから20cm離れた場所と、給電ローラーの表面温度を測定した。結果を表1に示す。   Plating treatment was performed with the above configuration, and a location 20 cm away from the feeding roller at the center of the FPC substrate and the surface temperature of the feeding roller were measured. The results are shown in Table 1.

4.比較例
冷却装置を組み込まなかった以外は、実施例と同様にして、めっき処理を行った。同様に、基板および給電ローラーの表面温度を測定した。結果を表1に示す。
4). Comparative Example Plating was performed in the same manner as in the example except that the cooling device was not incorporated. Similarly, the surface temperatures of the substrate and the feeding roller were measured. The results are shown in Table 1.

Figure 0005284829
Figure 0005284829

表1に示すように、本実施の形態の冷却装置を組み込むことにより、従来の冷却方法においては冷却効果が殆ど期待できなかった150ml/hという極微量の冷却水で、5℃を超える基板温度の低下を得ることができた。なお、本実施例では、基板面に対して冷却水の噴霧を行ったため、給電ローラーでは、若干の冷却効果に留まっている。   As shown in Table 1, by incorporating the cooling device of the present embodiment, a substrate temperature exceeding 5 ° C. with a very small amount of cooling water of 150 ml / h that could hardly be expected in the conventional cooling method. We were able to get a drop in In this embodiment, since the cooling water is sprayed on the substrate surface, the power supply roller has only a slight cooling effect.

5.めっき液の温度変化
また、前記実施例について、めっき処理の進行に伴うめっき液の温度変化を測定した。測定結果を、図3のグラフに示す。図3に示すように、めっき液の温度は、30℃弱(めっき開始時)から徐々に上昇して行ったが、2時間経過後は、50℃程度で安定しそれ以上の上昇は見られなかった。この結果、本発明の冷却装置を用いることにより、少ない量の水によってもめっき処理装置に必要な冷却効果が得られることが確認できた。
5. Temperature Change of Plating Solution In addition to the above example, the temperature change of the plating solution as the plating process progressed was measured. The measurement results are shown in the graph of FIG. As shown in FIG. 3, the temperature of the plating solution was gradually increased from a little less than 30 ° C. (at the start of plating), but after 2 hours, it was stable at about 50 ° C. and increased further. There wasn't. As a result, it was confirmed that by using the cooling device of the present invention, the cooling effect necessary for the plating apparatus can be obtained even with a small amount of water.

そして、本実施例によるめっきの状態を観察したところ、均一なめっき面が形成されていることが確認できた。   And when the state of the plating by a present Example was observed, it has confirmed that the uniform plating surface was formed.

このように、本実施の形態によれば、高速連続めっき処理時であっても、150ml/hと極微量の冷却水で、メッキ液や基板の温度が上昇することを抑制できることが分かる。   Thus, according to the present embodiment, it can be understood that even during high-speed continuous plating treatment, it is possible to suppress an increase in the temperature of the plating solution and the substrate with an extremely small amount of cooling water of 150 ml / h.

10 フレキシブル配線基板
30 超音波発信器
31 超音波振動素子
40 水補給槽
41 毛細管吸水体
42 水
43 水滴
51、52 給電ローラー
60 不溶性陽極部
61 発泡抵抗体
62 不溶性陽極本体
63 セラミックコート層
70 めっき槽
80 銅イオン噴流部
81 配管パイプ
82 噴流ポンプ
83 噴流ノズル
90 銅イオン供給部
91 酸化銅粉供給槽
92 銅イオン補給槽
93 溶存酸素低減槽
94 濾過器
DESCRIPTION OF SYMBOLS 10 Flexible wiring board 30 Ultrasonic transmitter 31 Ultrasonic vibration element 40 Water replenishment tank 41 Capillary water absorption body 42 Water 43 Water drop 51, 52 Feed roller 60 Insoluble anode part 61 Foaming resistor 62 Insoluble anode main body 63 Ceramic coat layer 70 Plating tank 80 Copper ion jet part 81 Pipe pipe 82 Jet pump 83 Jet nozzle 90 Copper ion supply part 91 Copper oxide powder supply tank 92 Copper ion replenishment tank 93 Dissolved oxygen reduction tank 94 Filter

Claims (2)

高速連続めっき処理装置のめっき槽の手前に配置されて前記高速連続めっき処理装置を冷却するめっき処理装置用冷却装置であって、
冷却用の水を補給する水補給槽と、
前記水補給槽より水を吸水する毛細管吸水体と、
前記毛細管吸水体の一端に接触して設けられて、前記水補給槽から前記毛細管吸水体に吸水された水を霧化して、めっき処理装置の冷却対象に噴霧させる超音波振動素子と、
前記超音波振動素子に超音波振動を付与する超音波振動発信器と
を備えていることを特徴とするめっき処理装置用冷却装置。
A cooling device for a plating apparatus that is disposed in front of a plating tank of a high-speed continuous plating apparatus and cools the high-speed continuous plating apparatus,
A water replenishment tank for replenishing cooling water;
A capillary water absorber that absorbs water from the water supply tank;
An ultrasonic vibration element that is provided in contact with one end of the capillary absorbent body, atomizes the water absorbed by the capillary absorbent body from the water replenishing tank, and sprays the water to be cooled in the plating apparatus;
An apparatus for cooling a plating apparatus, comprising: an ultrasonic vibration transmitter that applies ultrasonic vibration to the ultrasonic vibration element.
10A/dmを超える電流密度で基板へのめっきを行う高速連続めっき処理装置であって、
銅イオン供給部、めっき槽、給電部を備えており、
前記めっき槽は、銅イオン噴流部および不溶性陽極部を備えており、
前記銅イオン供給部は、めっき液に酸化銅粉を溶解する酸化銅粉溶解槽を備えており、
前記銅イオン噴流部は、前記銅イオン供給部において調製された前記めっき液を基板面に向けて噴出させてめっき槽に供給する噴流ポンプを備えており、
さらに、請求項1に記載のめっき処理装置用冷却装置が、前記めっき槽の手前において、前記給電部と前記めっき槽との間に、前記基板および/または前記給電部と対向して配置されている
ことを特徴とする高速連続めっき処理装置。
A high-speed continuous plating apparatus that performs plating on a substrate at a current density exceeding 10 A / dm 2 ,
It has a copper ion supply part, a plating tank, and a power supply part.
The plating tank includes a copper ion jet part and an insoluble anode part,
The copper ion supply unit includes a copper oxide powder dissolving tank for dissolving copper oxide powder in a plating solution,
The copper ion jet section includes a jet pump that jets the plating solution prepared in the copper ion supply section toward the substrate surface and supplies the plating bath to the plating tank.
Furthermore, the cooling device for a plating processing apparatus according to claim 1 is disposed in front of the plating tank and between the power supply unit and the plating tank so as to face the substrate and / or the power supply unit. A high-speed continuous plating apparatus characterized by
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