JP5282511B2 - Optical proximity effect correction pattern verification method and apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To verify a pattern in which an optical proximity effect is properly corrected. <P>SOLUTION: A pattern verification method is provided for verifying whether the distance between vertexes close to each other in a pattern subjected to optical proximity correction is less than a specified value. The method includes: a step of allowing a computer to analyze a pattern data having a sequence of vertex coordinates to extract at least one pattern in serif patterns, notch patterns and convex or concave triangular patterns formed by the optical proximity correction; and a step of allowing the computer to analyze the pattern data to verify that the distance between two vertexes close to each other is not less than a specified value, wherein in the verifying step, a distance between two vertexes in the extracted pattern is excluded from objects for verification. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to an optical proximity effect correction pattern verification method and a verification apparatus thereof.

  The pattern of large scale integrated circuits (LSIs) has been increasingly miniaturized in recent years. In general, LSI layout design consists of a logic design process in which circuit functions are described in HDL at RTL level, and a netlist is generated by logically synthesizing the functions, and a physical design that performs pattern layout from the netlist based on a layout library. Process. As a result, layout data is generated as design pattern data.

  Layout verification is performed on the layout data to check whether the design rule is satisfied. In this layout verification, it is verified that the pattern width (line width) and pattern interval (space) of the layout pattern are equal to or greater than a predetermined value.

  When an exposure mask is generated with a pattern based on the layout data thus verified, it is known that the pattern after exposure / development differs from the design pattern due to the optical proximity effect in the exposure process. For example, in a pattern developed after exposure, the tip of the line pattern is rounded down, the center of the isolated line pattern is thinned, or the line pattern adjacent to the large area pattern is thickened.

  Therefore, optical proximity correction (OPC: Optical Proximity Correction) is performed on the design pattern in anticipation of pattern variations due to the optical proximity effect. In the optical proximity correction, correction is performed by adding a serif pattern to the front end or corner of the pattern or making the center of the line pattern thicker or thinner. Then, the layout verification is performed again for the corrected OPC pattern.

  In this specification, in order to distinguish from the layout verification for the design pattern, the verification of the OPC pattern is referred to as OPC pattern verification. However, both the layout verification and the pattern verification verify that there is no inappropriate pattern interval or pattern width in a certain pattern, and are equivalent in that respect.

The following Patent Documents 1 to 4 describe that an OPC process is performed on each design pattern to generate an OPC pattern, and various verifications are performed on the OPC pattern.
JP 2000-314954 A JP 20044941 A JP 2007-102207 A Japanese Patent Laid-Open No. 10-239826

  In OPC pattern verification, by checking whether the distance between adjacent vertices is less than the specified value, the space between adjacent vertices is small, and there is a possibility that vertices may be joined after exposure / development. A portion where the pattern width between vertices to be narrowed is likely to be cut after exposure / development is detected. If it is detected, it is necessary to redo the OPC and layout of the design pattern.

  However, even a correct correction pattern generated by optical proximity correction may be recognized as an error pattern in the above OPC pattern verification process. For example, the outer serif pattern added to the pattern tip has a region where the pattern width is partially narrowed, and the inner serif pattern added to the corner of the pattern has a region where the interval is partially shortened. . If such an area is recognized as an error pattern by the OPC pattern verification, the pattern verification cannot be passed and the generation of the mask pattern cannot be completed.

  Accordingly, an object of the present invention is to provide a method, a program thereof, and an apparatus for appropriately performing OPC pattern verification.

The pattern verification method is a pattern verification method for verifying whether a distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
A computer analyzing pattern data having a vertex coordinate sequence and extracting at least one of a serif pattern, notch pattern, convex or concave triangular pattern formed by optical proximity correction;
A computer analyzing the pattern data to verify that the distance between the two adjacent vertices is not less than a specified value;
In the verification step, the distance between two vertices in the extracted pattern is excluded from the verification target.

  Since the distance between two vertices in the serif pattern, notch pattern, convex or concave triangular pattern formed by optical proximity correction is excluded from the verification target, the distance between the two vertices in these patterns is an error. Detection can be avoided, and OPC pattern verification can be performed appropriately.

  The pattern verification program is a program that causes a computer to execute the above OPC pattern verification method.

  The pattern verification apparatus is a computer apparatus that executes the above OPC pattern verification method.

  It is possible to provide a method, a program, and a device for appropriately verifying the layout of an OPC pattern.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the technical scope of the present invention is not limited to these embodiments, but extends to the matters described in the claims and equivalents thereof.

  FIG. 1 is a diagram for explaining an OPC pattern verification method. In FIG. 1A, the two patterns P10 and P12 are square patterns, and the vertex V10 of the pattern P10 and the vertex V12 of the pattern P12 are close to each other with an interval space. If this interval space is less than the predetermined minimum interval value, the pattern P10 and P12 are likely to be joined after exposure, so that it is detected as an error graphic.

  In FIG. 1B, in a single pattern P20, the vertices V21 and V22 are close to each other with a width width. If the width width is less than the minimum width value, which is a specified value, there is a high possibility that the vertices V21 and V22 will be cut off after exposure / development. Further, in FIG. 1B, in the pattern P20, the vertices V23 and V24 are close to each other with an interval space. If this interval space is also less than the minimum interval value, which is a prescribed value, there is a high possibility that the vertices V23 and V24 are joined after exposure / development, and this is detected as an error graphic.

  2, 3 and 4 are diagrams for explaining optical proximity effect correction. According to the optical proximity effect, when the pattern area is exposed to exposure energy, such as an electron beam or a charged particle beam, the amount of exposure of the isolated pattern becomes insufficient due to the scattering of the beam. The amount of exposure becomes excessive. Therefore, in the isolated pattern, the tip of the line pattern is rounded and contracted, the width of the line pattern is narrowed, and the convex part is rounded. Further, in a pattern having a high pattern density, the width of the line-shaped pattern becomes thick and the concave portion becomes round and thick.

  FIG. 2 shows an L-shaped pattern P30 and a line-shaped pattern P31. In contrast to the design pattern indicated by the solid line, the pattern deformation due to the optical proximity effect is indicated by the broken line. As described above, due to the optical proximity effect, in the isolated patterns P30 and P31, the tip portion contracts in a round shape, the line width becomes narrow, the convex portion becomes round, and the concave portion becomes round and thick. Therefore, an OPC pattern indicated by a one-dot chain line is added. In the pattern P30, outer serifs S10, S11, S12, and S13 are formed at the tip portion, outer serif S14 is formed at the convex portion, inner serif S15 is formed at the concave portion, and pattern OP16 that increases the line width at the line portion. , OP17, OP18, OP19 are formed. Similarly, in the pattern P31, outer serifs S20 and S21 are formed at the tip. The lines S10 to S15, S20, and S21 and the patterns OP16 to OP19 are patterns added by OPC.

  In FIG. 2, in the one-dot chain line OPC pattern to which the pattern is added by OPC, the interval SP1 between two adjacent vertices of the lines S10 and S20 is extremely narrow. This interval SP1 is detected as an error graphic by the OPC pattern verification shown in FIG. That is, the interval SP1 needs to be detected as an error graphic in the OPC pattern verification because there is a possibility of pattern joining by exposure and development.

  FIG. 3 shows an inverted T-shaped pattern P32. Since the pattern P32 is an isolated pattern, as described above, after the exposure / development process, the pattern is deformed as indicated by the broken line due to the optical proximity effect. Therefore, by OPC, outer serifs S22 to S27 are added to the leading end, inner serifs S28 and S29 are added to the concave portion, and patterns OP30 to OP32 are added to the line portion.

  In FIG. 3, in the one-dot chain line OPC pattern, the width WD1 between adjacent vertices of the inner serifs S28 and S29 is extremely narrow. The width WD1 is detected as an error graphic by the OPC pattern verification shown in FIG. That is, the width WD1 needs to be detected as an error graphic in the OPC pattern verification because the pattern P32 may be cut by exposure / development.

  FIG. 4 shows a line pattern P33 and a large area pattern. A broken line shows pattern deformation by the optical proximity effect. Outer lines S30 to S33 are formed at the tip of the portion of the line-shaped pattern P33 away from the pattern 34 by OPC, as in the case of the above-described isolated pattern, and patterns OP34 and OP35 are formed. On the other hand, the side of the pattern P33 that is close to the pattern 34 becomes thicker as shown by the broken line due to the scattering of exposure energy with respect to the pattern 34, so that a pattern OP36 that narrows the line width is formed by OPC.

  As described with reference to FIGS. 2 to 4, an outer serif, an inner serif, a pattern for increasing the line width, a pattern for reducing the thickness, and the like are added to the design pattern by OPC. Then, pattern verification is performed on the OPC pattern, and the narrow interval SP1 in FIG. 2 and the narrow width WD1 in FIG. 3 are detected as error graphics.

  However, in a pattern added by OPC, the distance between two adjacent vertices may be shorter than a specified value. Therefore, it is detected as an error graphic in the OPC pattern verification. In the present embodiment, in the OPC pattern verification, two adjacent vertices that should not be an error graphic are excluded from the verification target.

  FIG. 5 is a diagram showing a serif pattern that is inappropriately detected as an error graphic. By OPC, the outer serif pattern S40 is formed on the convex portion of the pattern P40, and the inner serif pattern S42 is formed on the concave portion. The outer serif pattern S40 is a convex pattern for avoiding the convex portion from contracting in a round shape, and has a shape with five vertices. The vertices V40 and V41 are close to each other, and the distance between them is detected as the pattern width WD40 in the OPC pattern verification. If the pattern width WD40 is smaller than a specified value, it is detected as an error graphic.

  On the other hand, the inner serif pattern S42 is a concave pattern for avoiding the concave portion from expanding in a round shape, and has a shape with five vertices. The vertices V42 and V43 are close to each other, and the distance between them is detected as the pattern interval SP42 in the OPC pattern verification. If this pattern interval SP42 is shorter than a specified value, it is detected as an error graphic.

  However, the pattern width WD40 and the pattern interval SP42 shown in FIG. 5 are caused by the serif pattern formed by OPC, and it is not necessary to detect these as error figures. Conversely, if these are detected as error graphics, the OPC pattern cannot pass the OPC pattern verification, and the mask design cannot be completed. Therefore, in this embodiment, these are excluded from the target of OPC pattern verification. A specific method will be described later.

  FIG. 6 is a diagram showing a notch pattern that is inappropriately detected as an error graphic. By OPC, an outer notch pattern OP50 and an inner notch pattern OP52 are formed in the pattern P50. The outer notch pattern OP50 is a pattern formed to avoid a reduction in line width as in the pattern OP19 in FIG. 2, and the pattern length is extremely shortened. On the other hand, the inner notch pattern OP52 is a pattern formed in order to avoid an increase in line width as the pattern OP36 in FIG. 4, and the pattern length is extremely shortened.

  The outer notch pattern OP50 has a shape with four vertices, and the vertices V50 and V51 are close to each other, and the distance between them is detected as a pattern width WD50 in the OPC pattern verification. If the pattern width WD50 is narrower than a specified value, an error graphic is detected. Similarly, the inner notch pattern OP52 has a shape with four vertices, and the vertices V52 and V53 are close to each other, and the distance between them is detected as a pattern interval SP52 in the OPC pattern verification. If the pattern interval SP52 is shorter than the specified value, it is detected as an error graphic.

  However, the pattern width WD50 and the pattern interval SP52 are caused by a serif pattern formed by OPC, and need not be detected as an error graphic. Therefore, in the present embodiment, these are excluded from the targets for OPC pattern verification.

  FIG. 7 is a diagram illustrating a method for detecting a serif pattern in the present embodiment. 7A shows the outer serif pattern S60, and FIGS. 7B and C show the inner serif patterns S62 and S64. Each serif pattern is a figure composed of five vertices h, i, j, k, and l.

  Therefore, the OPC pattern verification program can detect five vertices that can constitute these serif patterns by analyzing the OPC pattern data having the vertex coordinate sequence for the OPC pattern. That is, the OPC pattern verification program extracts five vertices by extracting the figures of sides a, b, c, and d that can form the serif pattern shown in FIG. 7 based on the vertex coordinates. Then, the OPC pattern verification program, for the five vertices that can form the detected serif pattern, when the total a + b + c + d of the sides a, b, c, d between the vertices is less than the serif judgment value, It is determined that the line pattern is formed by OPC.

  In a normal design pattern, as described above, the total a + b + c + d of the lengths of the figure consisting of five vertices never falls below the serif judgment value, so that the serif pattern formed by OPC based on the judgment criteria described above Can be determined.

  The extracted OPC serif correction unit is excluded from the OPC pattern verification target and is not detected as an error graphic.

  FIG. 8 is a diagram for explaining a notch pattern detection method according to the present embodiment. 8A shows the outer notch pattern OP66, and FIGS. 8B and 8C show the inner notch patterns OP68 and OP70. Each notch pattern is a figure composed of four vertices m, n, o, and p.

  Similar to the detection of the serif pattern, the OPC pattern verification program analyzes the OPC pattern data having the vertex coordinate sequence for the OPC pattern, and detects four vertices that can constitute these notch patterns. That is, the OPC pattern verification program extracts four vertices by extracting the figures of sides a, b, and c that can form the notch pattern of FIG. 8 based on the vertex coordinates. Then, the OPC pattern verification program uses OPC when the total length a + b + c of the sides a, b, and c between the vertices is less than or equal to the notch determination value for the four vertices that can form the detected notch pattern. It is determined that the notch pattern is formed.

  In a normal design pattern, as described above, the total a + b + c of the sides of the figure composed of four vertices is not less than or equal to the notch determination value. Therefore, the notch pattern formed by OPC based on the above determination criteria Can be determined. Since the extracted notch correction unit is excluded from the target of OPC pattern verification, it is not detected as an error graphic.

  FIG. 9 is a diagram showing a triangular pattern which is a pattern formed by OPC and detected as an error graphic. FIG. 9 shows design patterns P60 and P62 and an OPC pattern P60 corrected by OPC. The pattern P60 is a line-shaped pattern that is orthogonal at two locations, and a large-area pattern P62 exists in the vicinity thereof. Therefore, by OPC, a concave pattern OP61 is formed on the side facing the pattern P62, and a convex pattern OP60 is formed on the side not facing.

  As a result, the OPC pattern P60 (OPC) has a zigzag shape composed of vertices q, r, s, t, u, and v by adding the patterns OP60 and OP61 formed by OPC to the orthogonal shape of the design pattern. . That is, a convex triangular pattern with vertices q, r, and s and a convex triangular pattern with vertices s, t, and u are formed.

  In this pattern P60 (OPC), the width between the vertices q and s and the width between the vertices s and u are detected by the OPC pattern verification program, respectively. Is done.

  On the contrary, it can be identified that a concave triangular pattern by vertices r, s, and t and a concave triangular pattern by vertices t, u, and v are formed. In this case, the OPC pattern verification program detects the interval between the vertices r and t and the interval between the vertices t and v, respectively. If these intervals are shorter than a predetermined value, it is inappropriately detected as an error graphic.

  However, the above-described triangular pattern does not exist in a normal design pattern, and is a pattern formed by OPC, and therefore does not need to be detected as an error graphic. Therefore, in this embodiment, the width and interval between the two vertices of these triangular patterns are excluded from the OPC pattern verification target.

  FIG. 10 is a diagram for explaining a method of removing the interval or width between two vertices of the triangular pattern from the target of OPC pattern verification in the present embodiment. FIG. 10A shows two vertices of a convex triangular pattern. The OPC pattern verification program analyzes OPC pattern data having a vertex coordinate sequence, extracts a combination of two adjacent vertices, and checks whether the distance (interval or width) between them is less than a predetermined value. In this case, the OPC pattern verification program excludes the two adjacent vertices from the determination target when the two adjacent vertices are two vertices in the three consecutive vertices. In the example of FIG. 10A, a pair of two adjacent vertices V60 and V61, and V60 and V62 are vertices in the same pattern and two vertices belonging to three consecutive vertices. Such a combination of two vertices is excluded from the determination target.

  FIG. 10B shows two vertices of a concave triangular pattern. Similarly to the above, the pair of two adjacent vertices V64 and V65, and V64 and V66 are vertices in the same pattern and two vertices belonging to three consecutive vertices. Therefore, such a combination of two vertices is excluded from the determination target.

  FIG. 11 is a configuration diagram of the verification apparatus according to the present embodiment. The verification device is realized by installing a verification program in a general-purpose computer. The general-purpose computer shown in FIG. 11 has an arithmetic processing unit 100, a memory unit 102, an input / output unit 104, and a monitor 106, which are connected via a bus 107. The verification apparatus includes a design pattern data file 114, an OPC pattern data file 116, and an error graphic data file 118. The verification apparatus further includes a layout verification program 108 for verifying the design pattern, an OPC program 110 for performing OPC on the design pattern, and an OPC pattern verification program 112 for verifying the OPC pattern. What is detected as an error graphic by the layout verification program or the OPC pattern verification program is output as an error graphic data file 118. Among the above, the verification apparatus that executes the OPC pattern verification program performs the OPC pattern verification method according to the present embodiment.

  FIG. 12 is a flowchart showing an outline of the LSI mask generation process. In this flowchart, the logic design process of the LSI has been completed and the net list has been generated. In the mask generation process, pattern layout is performed by an automatic layout tool based on the net list (S100), and design pattern data (114 in FIG. 11) is generated. The layout verification program (108 in FIG. 11) performs layout verification to verify whether or not this design pattern is consistent with the design rule (S102). If an error is detected in the layout verification (YES in S104), the layout process S100 is performed again.

  When the layout verification of the design pattern is passed (NO in S104), optical proximity effect correction (OPC) is performed by the OPC program, and OPC pattern data (116 in FIG. 11) is generated (S106). The OPC pattern is a pattern for an exposure mask in which a serif pattern, an enlarged pattern, a reduced pattern, etc. are formed on a design pattern.

  Then, the OPC pattern verification program (112 in FIG. 11) verifies whether or not there is a pattern interval or pattern width less than the predetermined value in the OPC pattern (S108). When an error graphic is detected (YES in S110), the layout process S100 is performed again. That is, a design pattern is generated so that an error does not occur in OPC pattern verification even if OPC is performed. If this OPC pattern verification is passed (NO in S110), it becomes a mask pattern and becomes input data for a mask forming apparatus such as an electron beam exposure apparatus.

  FIG. 13 is a flowchart of the OPC pattern verification method in the present embodiment. This OPC pattern verification method is performed by an OPC pattern verification program by verifying that there is no figure in the OPC pattern whose distance between adjacent vertices is less than a predetermined value. Unlike layout verification performed on a design pattern, in OPC pattern verification, a minute pattern that does not exist in a design pattern that has passed layout verification but is generated by OPC is extracted and excluded from the verification target.

  Explaining along FIG. 13, first, verification conditions are input to the OPC pattern verification program (S200). The verification condition includes conditions such as a default value as a criterion for error determination and whether or not to exclude a triangular pattern portion. Next, the OPC pattern verification program generates an input graphic table 120 that can be analyzed by the OPC pattern verification program from the OPC pattern data file 116 to be verified (S202). The OPC pattern data 116 is a pattern vertex coordinate sequence or a set of polygon data, but the input figure table 120 is a pattern vertex coordinate sequence.

  Then, the OPC pattern verification program analyzes the input figure table 120 and includes a serif correction unit including the serif patterns S40 and S42 illustrated in FIG. 5 and a notch correction unit including the notch patterns OP50 and OP52 illustrated in FIG. Is detected, and a flag indicating that it is a serif correction unit or notch correction unit is set at the apex of the pattern (S204). This flag is a flag that can distinguish between a vertex in the same serif correction unit or notch correction unit or a vertex in a different serif correction unit or notch correction unit.

  The algorithm for detecting the serif correction unit and the notch correction unit is as already described in the explanation of FIGS. In other words, if a figure that can form a serif pattern or notch pattern is detected based on successive vertex coordinate sequences, and the total length of the sides of the figure is less than or equal to the serif judgment value or notch judgment part, A pattern or notch pattern is detected.

  Further, the OPC pattern verification program analyzes the vertex coordinate sequence of the input graphic table and distinguishes the vertex table 122 composed of the vertex coordinate sequence of the concave portion of the pattern from the vertex table 124 composed of the vertex coordinate sequence of the convex portion of the pattern. Separately generated (S206). Since the pattern width WD1 shown in FIG. 3 is verified in the concave portion and the pattern interval SP1 shown in FIG. 2 is verified in the convex portion, it is desirable to generate these vertex tables separately.

  Then, the OPC pattern verification program executes a concave width verification subroutine for the concave vertex table 122 (S208). Further, the OPC pattern verification program executes a convex interval verification subroutine (S210). An error graphic table 126 is generated by each verification subroutine. The error graphic table 126 has, for example, vertex coordinate data in which the width between two adjacent vertices is less than a specified value. Finally, the OPC pattern verification program generates error graphic data 118 from the error graphic table 126 (S212). The error graphic data 118 is, for example, a data format that enables an error graphic to be displayed, or a data format that is referred to when the layout process is performed again.

  FIG. 14 is a flowchart of a concave width verification subroutine and a convex interval verification subroutine in the OPC pattern verification method according to the present embodiment. First, the subroutine program checks whether there is a designation for excluding the adjacent vertices within the consecutive N vertices (N = 3) shown in FIG. 10 (S300). If specified (YES in S300), the subroutine program determines whether two adjacent vertices are vertices included in N vertices (N = 3) and belong to the same figure (polygon, pattern). Is checked (S302). When step S302 is YES, since these are the two vertices of the triangular pattern shown in FIG. 10, these two vertices are excluded from the verification target.

  Then, the subroutine program checks whether the two vertices have the same serif correction unit or notch correction unit flag (S304). If the same serif correction unit or notch correction unit flag is set (S304), the two vertices are excluded from the verification target. When two vertices have different serif correction unit or notch correction unit flags, they should be verified and are not excluded from the verification target. This is as shown in SP1 of FIG. 2 and WD1 of FIG.

  For the two vertices not excluded in steps S302 and S304, the subroutine program checks whether the interval or width between the two vertices is greater than or equal to a specified value (or less than a specified value). (S306) If it is equal to or greater than the predetermined value (YES in S306), it is not an error, and if it is less than the predetermined value (NO in S306), the vertex data is stored in the error graphic table as an error graphic (S308). The above steps S300 to S308 are repeated for all vertices.

  As described above, in step S302, the two vertices of the triangular pattern generated by OPC are excluded from the verification target, and in step S304, the two vertices of the serif correction unit and the notch correction unit generated by OPC are excluded from the verification target. The Therefore, it is possible to avoid a figure that should not be an error from being detected as an error due to a pattern generated due to OPC.

  The above embodiment is summarized as follows.

(Appendix 1)
In a pattern verification method for verifying whether or not the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
A computer analyzing pattern data having a vertex coordinate sequence and extracting at least one of a serif pattern, notch pattern, convex or concave triangular pattern formed by optical proximity correction;
A computer analyzing the pattern data to verify that the distance between the two adjacent vertices is not less than a specified value;
The pattern verification method characterized in that, in the verification step, a distance between two vertices in the extracted pattern is excluded from a verification target.

(Appendix 2)
In a pattern verification method for verifying whether or not the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
A computer analyzing pattern data having a vertex coordinate sequence to extract a serif pattern formed by optical proximity correction;
A computer analyzing the pattern data to verify that the distance between the two adjacent vertices is not less than a specified value;
The pattern verification method characterized in that, in the verification step, a distance between two vertices in the serif pattern is excluded from verification targets.

(Appendix 3)
In Appendix 2,
In the process of extracting the serif pattern, when the sum of the distances between five consecutive vertices that can form a convex or concave serif pattern is equal to or less than the serif determination value, the serif pattern is determined as the serif pattern added by the optical proximity correction A pattern verification method characterized by that.

(Appendix 4)
In a pattern verification method for verifying whether or not the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
A computer analyzing pattern data having a vertex coordinate sequence and extracting a notch pattern formed by optical proximity correction;
A computer analyzing the pattern data to verify that the distance between the two adjacent vertices is not less than a specified value;
In the verification step, the distance between two vertices in the notch pattern is excluded from verification targets.

(Appendix 5)
In Appendix 4,
The notch pattern extraction step determines that a notch pattern is added by the optical proximity effect correction when the total distance between four consecutive vertices that can form a convex or concave notch pattern is equal to or less than a notch determination value. A pattern verification method characterized by that.

(Appendix 6)
In a pattern verification method for verifying whether or not the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
A step of analyzing a pattern data having a vertex coordinate sequence and extracting a convex or concave triangular pattern formed by optical proximity correction;
A computer analyzing the pattern data to verify that the distance between the two adjacent vertices is not less than a specified value;
A pattern verification method characterized in that, in the verification step, a distance between two vertices in the triangular pattern is excluded from verification targets.

(Appendix 7)
In Appendix 6,
The step of extracting the triangular pattern excludes the distance between the two adjacent vertices from the verification target when the two adjacent vertices are vertices in three consecutive vertices of the vertex coordinate sequence. Pattern verification method.

(Appendix 8)
In a computer-readable pattern verification program for causing a computer to execute a pattern verification method for verifying whether a distance between adjacent vertices in a pattern subjected to optical proximity effect correction is less than a specified value, the pattern verification program includes:
Analyzing pattern data having vertex coordinate sequences and extracting at least one of serif patterns, notch patterns, convex or concave triangular patterns formed by optical proximity correction;
Analyzing the pattern data and verifying that the distance between the two adjacent vertices is not less than a specified value;
A pattern verification program characterized in that, in the verification step, a distance between two vertices in the extracted pattern is excluded from a verification target.

(Appendix 9)
In a pattern verification apparatus for verifying whether the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
Extracting means for analyzing pattern data having a vertex coordinate sequence and extracting at least one of a serif pattern, notch pattern, convex or concave triangular pattern formed by optical proximity correction;
Analyzing the pattern data and verifying that the distance between the two adjacent vertices is not less than a specified value;
The pattern verification apparatus, wherein the verification means excludes a distance between two vertices in the extracted pattern from a verification target.

(Appendix 10)
In a pattern verification apparatus for verifying whether the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
An extracting means for analyzing the pattern data having the vertex coordinate sequence and extracting a serif pattern formed by optical proximity correction;
Analyzing the pattern data and verifying that the distance between the two adjacent vertices is not less than a specified value;
The pattern verification apparatus, wherein the verification means excludes a distance between two vertices in the serif pattern from a verification target.

(Appendix 11)
In Appendix 10,
The line pattern extraction means determines that the line pattern is added by the optical proximity effect correction when the total distance between five consecutive vertices that can form a convex or concave line pattern is equal to or less than the line determination value. A pattern verification apparatus characterized by that.

(Appendix 12)
In a pattern verification apparatus for verifying whether the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
An extraction means for analyzing pattern data having a vertex coordinate sequence and extracting a notch pattern formed by optical proximity correction;
Analyzing the pattern data and verifying that the distance between the two adjacent vertices is not less than a specified value;
The pattern verification apparatus, wherein the verification means excludes a distance between two vertices in the notch pattern from a verification target.

(Appendix 13)
In Appendix 12,
The notch pattern extraction means determines the notch pattern added by the optical proximity effect correction when the total distance between four consecutive vertices that can form a convex or concave notch pattern is equal to or less than a notch determination value. A pattern verification apparatus characterized by that.

(Appendix 14)
In a pattern verification apparatus for verifying whether the distance between adjacent vertices in a pattern corrected for optical proximity effect is less than a specified value,
Extracting means for analyzing pattern data having a vertex coordinate sequence and extracting a convex or concave triangular pattern formed by optical proximity correction;
Analyzing the pattern data and verifying that the distance between the two adjacent vertices is not less than a specified value;
The pattern verification apparatus, wherein the verification means excludes a distance between two vertices in the triangular pattern from a verification target.

(Appendix 15)
In Appendix 14,
The triangle pattern extraction means excludes the distance between two adjacent vertices from the verification target when the two adjacent vertices are vertices within three consecutive vertices of the vertex coordinate sequence. A pattern verification device.

It is a figure explaining the OPC pattern verification method. It is a figure explaining optical proximity effect correction. It is a figure explaining optical proximity effect correction. It is a figure explaining optical proximity effect correction. It is a figure which shows the serif pattern detected as an error figure inappropriately. It is a figure which shows the notch pattern detected as an error figure inappropriately. It is a figure explaining the detection method of a serif pattern in this Embodiment. It is a figure explaining the detection method of the notch pattern in this Embodiment. It is a figure which shows the triangular pattern detected as an error figure. It is a figure explaining the method to exclude the space | interval and width | variety between two vertexes of the triangular pattern in this Embodiment from the object of OPC pattern verification. It is a block diagram of the verification apparatus in this Embodiment. It is a flowchart figure which shows the outline of the mask production | generation process of LSI. It is a flowchart figure of the OPC pattern verification method in this Embodiment. It is a flowchart figure of the width verification subroutine of a recessed part in the OPC pattern verification method in this Embodiment, and the space | interval verification subroutine of a convex part.

Explanation of symbols

P10, P12: Pattern V10, V12: Two adjacent vertices P20: Pattern V21, V22: Two adjacent vertices V23, V24: Near vertices

Claims (8)

In the verification method of pattern data corrected for optical proximity effect,
A computer that analyzes a vertex coordinate sequence indicating coordinates of each vertex of the pattern included in the pattern data, and a serif pattern formed by the optical proximity effect correction based on a plurality of consecutive vertex coordinates in the vertex coordinate sequence ; An extraction step of extracting at least one of a notch pattern, a convex or concave triangular pattern;
Computer, and a verification step of the analyzing the vertex coordinates columns, the distance between the two vertex coordinates adjacent to verify whether less than a specified value,
In the verification step, a pattern data verification method, wherein a distance between two vertex coordinates in the pattern extracted in the extraction step is excluded from a verification target. In the verification method of pattern data corrected for optical proximity effect,
A computer analyzes a vertex coordinate sequence indicating the coordinates of each vertex of the pattern included in the pattern data, and determines a serif pattern formed by the optical proximity effect correction based on a plurality of continuous vertex coordinates in the vertex coordinate sequence. An extraction process to extract ;
Computer, and a verification step of the analyzing the vertex coordinates columns, the distance between the two vertex coordinates adjacent to verify whether less than a specified value,
A pattern data verification method, wherein, in the verification step, a distance between two vertex coordinates in the serif pattern is excluded from a verification target. In claim 2,
In the step of extracting the serif pattern, when the total distance between the vertex coordinates of five consecutive vertex coordinates in the vertex coordinate sequence is equal to or less than a serif determination value, the serif pattern is determined and extracted. Pattern data verification method. In the verification method of pattern data corrected for optical proximity effect,
A computer analyzes a vertex coordinate sequence indicating the coordinates of each vertex of the pattern included in the pattern data, and calculates a notch pattern formed by the optical proximity effect correction based on a plurality of consecutive vertex coordinates in the vertex coordinate sequence. An extraction process to extract ;
Computer, and a verification step of the analyzing the vertex coordinates columns, the distance between the two vertex coordinates adjacent to verify whether less than a specified value,
A pattern data verification method, characterized in that, in the verification step, a distance between two vertex coordinates in the notch pattern is excluded from verification targets. In claim 4,
The notch pattern extracting step is characterized in that the notch pattern is determined and extracted when the sum of the distances between the vertex coordinates of four consecutive vertex coordinates in the vertex coordinate sequence is equal to or less than a notch determination value. Pattern data verification method. In the verification method of pattern data corrected for optical proximity effect,
A computer analyzes a vertex coordinate sequence indicating coordinates of each vertex of the pattern included in the pattern data, and a convex shape formed by the optical proximity effect correction based on three consecutive vertex coordinates in the vertex coordinate sequence or An extraction process for extracting the concave triangular pattern;
Computer, and a verification step of the analyzing the vertex coordinates columns, the distance between the two vertex coordinates adjacent to verify whether less than a specified value,
A pattern data verification method, wherein, in the verification step, a distance between two vertex coordinates in the triangular pattern is excluded from a verification target. In a computer-readable pattern data verification program for causing a computer to execute a pattern data verification method corrected for optical proximity effect, the pattern data verification program includes:
Analyzing a vertex coordinate sequence indicating the coordinates of each vertex of the pattern included in the pattern data, a serif pattern formed by the optical proximity effect correction based on a plurality of consecutive vertex coordinates in the vertex coordinate sequence , a notch pattern, An extraction step of extracting at least one of a convex or concave triangular pattern;
Analyzing the vertex coordinate sequence and causing a computer to execute a verification step of verifying whether a distance between two adjacent vertex coordinates is less than a specified value;
A pattern data verification program characterized in that, in the verification step, a distance between two vertex coordinates in the pattern extracted in the extraction step is excluded from a verification target. In the verification device for the pattern data corrected by the optical proximity effect,
Analyzing a vertex coordinate sequence indicating the coordinates of each vertex of the pattern included in the pattern data, a serif pattern formed by the optical proximity effect correction based on a plurality of consecutive vertex coordinates in the vertex coordinate sequence , a notch pattern, Extraction means for extracting at least one of a convex or concave triangular pattern;
Verifying means for analyzing the vertex coordinate sequence and verifying whether a distance between two adjacent vertex coordinates is less than a specified value;
The pattern data verification apparatus, wherein the verification unit excludes a distance between two vertex coordinates in the pattern extracted by the extraction unit from a verification target.