JP5281835B2 - Non-contact temperature detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a noncontact-type temperature detector capable of detecting a medical liquid, pure water, such a liquid as a mixed liquid of these, with sufficient responsivity in semiconductor or liquid crystal panel manufacturing equipment or the like. <P>SOLUTION: In the base 200 of the noncontact-type temperature detector S1 connected between both pipes P8, P9, a rectangular pillar section 210 has a communication path 210a and a recessed part 210b, and the recessed part 210b is formed into a shape recessed towards the axial center part of the communication path 210a from the upside end surface 213 of the rectangular pillar 210. The bottom wall part 212b of the recessed part 210b constitutes a wall part of the peripheral walls of the communication path 210a, and is formed thinly. Into the bottom wall 330 of a housing 300 attached to the rectangular pillar 210 so as to close the recessed part 210b, a thermopile-type temperature sensor 340 is fitted, and faces the bottom wall 212b with the inside of the recessed part 210b in between. Based on heat radiation energy radiated from a liquid inside the communication path 210a into the recessed part 210b passing through the bottom wall 212b, the temperature sensor 340 detects the temperature of the liquid. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention is a non-contact type suitable for detecting the temperature of a liquid such as a chemical solution, pure water or a mixture thereof used in a semiconductor element manufacturing process by a semiconductor manufacturing apparatus or a liquid crystal panel manufacturing process by a liquid crystal panel manufacturing apparatus. The present invention relates to a temperature detection device.

  Conventionally, for example, in a semiconductor manufacturing apparatus, a contact-type temperature sensor such as a resistance temperature sensor is used for temperature control of a liquid such as a chemical solution, pure water, or a mixture thereof used for various processing of a semiconductor wafer. (See Patent Document 1 below).

Here, the liquid flows in the piping system of the semiconductor manufacturing apparatus. Therefore, the temperature of the liquid is detected by inserting the light receiving portion of the contact temperature sensor through the peripheral wall of the piping system into the liquid.
JP 2005-103455 A

  By the way, when the temperature of the liquid is detected by the contact-type temperature sensor as described above, the temperature of the liquid is detected when the temperature of the light receiving part of the contact-type temperature sensor becomes the temperature of the liquid. .

  Here, since the liquid has a specific heat capacity, it takes time for the heat of the liquid to be transmitted to the light receiving unit of the contact temperature sensor. As a result, depending on the contact temperature sensor, there is a problem that good response cannot be obtained even if the temperature of the liquid is detected.

  For this, it is conceivable to provide a non-contact type temperature sensor in the piping system of the semiconductor manufacturing apparatus instead of the contact type temperature sensor. The non-contact temperature sensor is disposed so as to face the liquid via the peripheral wall of the piping system, and detects the temperature of the liquid based on the thermal radiation energy of the liquid. Therefore, the non-contact temperature sensor detects the temperature of the liquid in a non-contact state with the liquid. For this reason, according to the non-contact temperature sensor, it can be said that the detection of the temperature of the liquid is not influenced by the heat capacity of the liquid.

  However, the peripheral wall of the piping system itself has a heat capacity. For this reason, it takes time until the temperature of the peripheral wall of the piping system becomes the temperature of the liquid because the thermal radiation energy of the liquid is transmitted to the peripheral wall of the piping system according to the change. Accordingly, there is a problem that the temperature of the liquid cannot be detected with high responsiveness simply by providing the non-contact temperature sensor in the piping system of the semiconductor manufacturing apparatus.

  Therefore, in order to deal with the above-described problems, the present invention has been devised in a passage configuration for flowing a liquid such as a chemical solution, pure water, or a mixed solution thereof in a semiconductor manufacturing apparatus, a liquid crystal panel manufacturing apparatus, or the like. An object of the present invention is to provide a non-contact temperature detecting device capable of detecting the temperature of the above with good responsiveness.

In solving the above-mentioned problems, the non-contact temperature detection device according to the present invention, according to the description of claim 1,
Through-shaped communication passage ing of a fluororesin such as PTFE with (210a) and ingredients Bei, outside the recess (210 b) a predetermined wall portion of the peripheral wall of the communication passage (210 b) as a bottom wall (212b) so as to open the mouth directed towards a substrate (200) obtained by forming with at hardly corroded resin by corrosive gases,
A wall member (330) assembled to the base so as to close the recess,
A thermopile type temperature sensor supported by a wall member so as to face the bottom wall portion of the recess of the base body with a space therebetween, and flows through the communication path containing a component that releases the corrosive gas. A thermopile type temperature sensor (340) for detecting the temperature of the liquid based on thermal radiation energy radiated from the liquid into the recess through its bottom wall ;
The heat radiation energy radiated into the recess of the base is transmitted to the temperature sensor, and the corrosive gas released from the liquid into the recess through the bottom wall is blocked from the temperature sensor. Gas cutoff means (400) provided,
The peripheral wall of the communication passage is thin at the predetermined wall portion so that the liquid does not damage the predetermined wall portion by the pressure, and the thermal radiation energy from the liquid is responsive. It is formed to be thin enough to quickly reach the temperature sensor through the predetermined wall portion.

According to such a configuration, the thermopile type temperature sensor, in the recess of the base, the wall member so as to face at a against spacing in the bottom wall of the recess is a predetermined wall portion position of the peripheral wall of the communication passage It is supported by the. Thus, those temperature sensors at the recess as described above, so as not to be affected by the heat capacity of the liquid in the communication path, and the liquid material can be maintained in a non-contact state.

Here, as described above, the predetermined wall portion of the peripheral wall of the communication passage is thin enough that the liquid does not damage the predetermined wall portion due to the pressure, and the thermal radiation energy from the liquid. However, it is formed in such a thin thickness that it passes through the predetermined wall portion and reaches the temperature sensor quickly with good response. Therefore, even if the communication path is made of a fluororesin, the thermal radiation energy radiated from the liquid is quickly and responsively incident on the temperature sensor without being delayed by the heat capacity of the predetermined wall portion. As a result, according to the non-contact temperature detecting device, the temperature of the liquid in the communication path is affected by the predetermined wall portion even though the predetermined wall portion is interposed between the liquid and the temperature sensor. And can be detected with good responsiveness without delay .
Even if corrosive gas is released from the liquid into the recess, the corrosive gas is blocked from the temperature sensor by the gas blocking means. Therefore, the temperature sensor does not corrode on contact with the corrosive gas. Here, since the heat radiation energy radiated into the recess is transmitted to the temperature sensor by the gas blocking means, the temperature sensor always maintains the normal state and the heat radiated into the recess. The temperature of the liquid can be detected with good responsiveness based on the radiant energy. Since the base is formed of a resin that is not easily corroded by the corrosive gas, it does not corrode even when the base is in contact with the corrosive gas.

According to a second aspect of the present invention, in the non-contact type temperature detecting device according to the first aspect , the gas shut-off means isolates the temperature sensor from the bottom wall portion in the recess. A gas barrier film (400) that transmits the thermal radiation energy radiated into the recess to the temperature sensor and shields the corrosive gas released into the recess from the temperature sensor. ).

Thus, if the gas shut-off means is constituted by the gas shut-off film as described above, the effect of the invention according to claim 1 can be further ensured only by adopting a simple constituent member called a gas shut-off film. Can be achieved.

According to a third aspect of the present invention, the non-contact temperature detecting device according to the present invention is provided.
It has a cylinder (510) and a side wall member (520) that closes one side opening end (512) of the cylinder, and is made of a fluororesin such as PTFE that is inserted into the peripheral wall of the cylinder so as to cross its axis. A base body (500) having a communication pipe (530) formed with a predetermined wall portion (535) so as to face the other side opening end (513) of the cylinder on its peripheral wall,
The other side wall member that closes the other side opening end of the cylinder, and the concave portion of the communicating pipe facing the predetermined wall part is directed away from the predetermined wall part from the other side opening end of the cylinder. The other side wall member (630) formed to be,
In the cylinder, the liquid is supported by the concave facing portion of the other side wall member so as to face the predetermined wall portion of the communication pipe at a distance from the liquid flowing through the communication pipe through the predetermined wall portion of the communication pipe. A thermopile type temperature sensor (340) for detecting the temperature of the liquid based on the thermal radiation energy radiated to
The predetermined wall portion of the communication pipe is thin enough that the liquid does not damage the predetermined wall portion due to the pressure thereof, and the thermal radiation energy from the liquid is quickly and responsively responsive to the predetermined wall portion. It is so thin that it reaches the temperature sensor through the wall.

  According to this, the thermopile type temperature sensor is spaced from the predetermined wall portion of the communication pipe in a space formed between the concave facing portion of the other side wall member and the one side wall member through the inside of the cylinder. The other side wall member is supported by the concave facing portion so as to face each other. For this reason, the temperature sensor can be maintained in a non-contact state with the liquid so as not to be affected by the heat capacity of the liquid in the communication pipe in the space as described above.

Here, since the space includes the inside of the cylinder between the concave facing portion of the other side wall member and the one side wall member, the space is formed widely. Therefore, the temperature of the substrate is not easily transmitted to the temperature sensor. Therefore, the predetermined wall portion of the communicating pipe, since it is set to a predetermined thinness in the same manner as described above, thermal radiation energy emitted from the liquid in the communication pipe, without being affected by the temperature of the substrate And, it is rapidly incident on the temperature sensor without being delayed by the heat capacity of the predetermined wall portion of the communication pipe. As a result, according to the non-contact temperature detecting device, the temperature of the liquid can be detected with high responsiveness without being influenced by the temperature of the base in the wide space as described above.

According to a fourth aspect of the present invention, in the non-contact temperature detecting device according to the third aspect ,
The liquid contains components that release corrosive gases,
The substrate and the communication pipe are formed of a resin that is not easily corroded by the corrosive gas.
The temperature sensor is supported so as to be isolated from the predetermined wall part in a space formed between the concave facing part of the other side wall member and the one side wall member through the inside of the cylinder and radiated into the cylinder. A gas barrier film (700) that transmits thermal radiation energy to the temperature sensor and blocks the corrosive gas released into the cylinder from the temperature sensor is provided.

As described above, the gas barrier film having the above-described configuration is disposed between the predetermined wall and the temperature sensor in the space formed between the concave facing portion of the other side wall member and the one side wall member via the inside of the cylinder. By supporting so as to be isolated from the site, the effect of the invention of claim 3 can be achieved more reliably. In addition, since the base body and the communication pipe are formed of a resin that is not easily corroded by the corrosive gas, the base body and the communication pipe are not corroded by contact with the corrosive gas.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 shows a first embodiment of the present invention applied to a single wafer processing system of a semiconductor manufacturing apparatus. In forming a semiconductor element on each of a plurality of semiconductor wafers that have been procured, the semiconductor manufacturing apparatus uses the single wafer processing system to form a film on each of the plurality of semiconductor wafers, photoresist coating, exposure, development, Various processes such as etching, ion implantation, and stripping of photoresist are performed. In addition, the semiconductor manufacturing apparatus performs a cleaning process for each semiconductor wafer by the single wafer processing system as necessary in the course of various processes as described above.

  Here, the configuration of the single wafer processing system will be described with reference to FIG. 1. Normal temperature pure water supplied from the pure water supply source 10 into the upstream portion of the pipe P <b> 1 is flow controlled by the flow control device 20. Then, it flows into the downstream portion of the pipe P1. The high-temperature pure water supplied from the pure water supply source 30 into the upstream portion of the pipe P2 is flow-controlled by the flow control device 40 and flows into the downstream portion of the pipe P2.

  The normal temperature pure water that has flowed into the downstream portion of the pipe P1 as described above flows into the pipe P3 and is mixed with the high-temperature pure water that has flowed into the downstream portion of the pipe P2 as described above. It flows into the on-off valve device 50 as pure water.

  In the single wafer processing system, the chemical solution in the chemical solution tank 60 is sucked by the pump 70 through the pipe P4 and discharged into the pipe P5. The discharged chemical solution is filtered by the filter 80 and flows into the pipe P6. The flow rate control device 90 controls the flow rate so as to obtain a predetermined flow rate, and flows into the on-off valve device 50 through the pipe P7. To do. In addition, the said chemical | medical solution consists of a liquid mixture of a sulfuric acid and hydrogen peroxide, for example, and the said chemical | medical solution discharge | releases corrosive gas with the radiation | emission of the radiation energy (henceforth thermal radiation energy) by infrared rays. The corrosive gas corrodes the constituent member by contact with a constituent member (a casing, a thermopile element or the like) of a temperature sensor 340 (described later).

  Thus, the pure water that has flowed into the on-off valve device 50 as described above is supplied into the pipe P8 by the on-off valve device 50 in the first valve opening mode (described later), and the non-contact type temperature is increased. It passes through the detection device S1 and flows down from the pipe P9 into the processing cup 100 on the left side in FIG. With the mixed pure water flowing down in this way, the semiconductor wafer (refer to symbol W in FIG. 1) in the left processing cup 100 is washed.

  In the first embodiment, the semiconductor wafer W is fixed on the spin table 101 in the processing cup 100 on the left side, and the semiconductor wafer W is rotated by the spin table 101 as described above. Washed with mixed pure water flowing down. Further, when the flow position of the mixed pure water from the pipe P9 is switched to the right processing cup 100, the semiconductor wafer W fixed on the spin table 101 in the right processing cup 100 is also the left side described above. The semiconductor wafer W in the processing cup 100 is cleaned in the same manner.

  Further, as described above, the chemical liquid that has flowed into the on-off valve device 50 is mixed with the inflowing mixed pure water in the on-off valve device 50 to obtain a predetermined temperature (for example, 60 (° C.)) and a predetermined low concentration. It is produced as a treatment chemical solution. The treatment chemical solution generated in this way is supplied into the pipe P8 by the opening / closing valve device 50 in the second valve opening mode (described later), passes through the temperature detection device S1, and is connected to the left processing cup from the pipe P9. Flow down into 100. The semiconductor wafer W in the processing cup 100 on the left side is processed with the processing chemical solution flowing down in this way. The same applies to the semiconductor wafer W in the processing cup 100 on the right side.

  In the first embodiment, each of the flow rate control devices 20 and 40 described above is controlled by the electronic control circuit 110 based on the detection output (described later) of the temperature detection device S1, and the temperature and concentration of the processing chemical solution are controlled. The inflow amount of normal temperature pure water into the downstream portion of the pipe P1 and the inflow amount of high temperature pure water into the downstream portion of the pipe P2 are controlled so as to maintain the predetermined temperature and the predetermined low concentration.

  The on-off valve device 50 described above is switched to the first or second valve opening mode or valve closing mode according to air from an air supply source (not shown) under switching control by an electronic control circuit (not shown). I'm left. Further, the flow rate control device 90 described above controls the inflow amount of the chemical liquid from the pipe P6 into the pipe P7 so as to be a predetermined flow rate.

  Further, in the single wafer processing system, the mixed pure water or the processing chemical used for cleaning or processing the semiconductor wafer W in each processing cup 100 overflows from any of the processing cups 100, and is used as waste liquid. It flows into the waste liquid treatment tank 120 through the pipe P10 and is stored.

  The waste liquid stored in the waste liquid treatment tank 120 in this manner is sucked from the waste liquid treatment tank 120 through the pipe P12 by the aspirator 130, and from the industrial water supply source 140 to the upstream portion of the pipe P11, the flow control device 150, and It is mixed with industrial water supplied through the downstream portion of the pipe P11 to become a waste liquid having a predetermined temperature that can be discharged, and is discharged through the pipe P13, the non-contact temperature detecting device S2, and the pipe P14.

  In the present embodiment, the predetermined dischargeable temperature is higher than the heat resistance temperature (60 (° C.) to 80 (° C.)) of the forming material of both the pipes P13 and P14, for example, vinyl chloride resin (hereinafter referred to as PVC). It is set to be low. Each of the pipes P1 to P11 described above is formed of perfluoroalkoxyalkane (hereinafter referred to as PFA), which is a chemical solution (for example, a solution containing sulfuric acid or hydrogen peroxide), in particular. Good chemical resistance to high concentration chemicals.

  In the first embodiment, the above-described flow rate control device 150 is controlled by the electronic control circuit 160 based on a detection output (described later) of the temperature detection device S2, and industrial water from the industrial water supply source 140 to the aspirator 130 is controlled. Control the flow rate.

  Next, the structure of both non-contact-type temperature detection apparatuses S1 and S2 will be described. As shown in FIGS. 1 and 2, the temperature detection device S <b> 1 is connected between both pipes P <b> 8 and P <b> 9, and the temperature detection device S <b> 1 is configured by a base body 200 and a detection device main body 300. In the present embodiment, the upper, lower, left and right sides in FIG. 2 correspond to the upper, lower, left and right sides of the temperature detection device S1 in FIG.

  As shown in FIG. 2, the base body 200 includes a trapezoidal rectangular column part 210, an upstream annular boss part 220, and a downstream annular boss part 230. The quadrangular column part 210 has a cross-sectional circular communication path 210a, and the communication path 210a is formed in the quadrangular column part 210 so as to penetrate in a direction parallel to both opposing outer surfaces.

  Further, the square column part 210 has a recess 210b, and this recess 210b has an upper and lower side recesses 211 and 212 so that it extends from the upper end surface 213 of the square column part 210 in the axial center of the communication path 210a. It is formed in a concave shape toward the part.

  The upper concave portion 211 is formed in a U-shaped cross section with a cylindrical inner peripheral wall portion 211a and a circular bottom wall portion 211b, and the upper concave portion 211 has an upper end surface of the quadrangular prism portion 210 at its upper end opening. It opens upward from 213.

  The lower concave portion 212 is formed in a U-shaped cross section with a cylindrical inner peripheral wall portion 212a and a disk-shaped bottom wall portion 212b. The lower concave portion 212 is formed on the bottom wall portion 211b of the upper concave portion 211. The circular central opening 211c opens into the upper recess 211.

  In the first embodiment, the bottom wall portion 212b is configured by a predetermined wall portion of the peripheral wall of the communication passage 210a, and the bottom wall portion 212b is formed to have the following external shape. Has been. That is, the bottom wall portion 212b has a predetermined thickness t (for example, a thickness within a range of 0.3 (mm) to 0.5 (mm)) over the whole of the communication passage 210a. Along the inner peripheral surface of the central portion in the axial direction, it is formed in an upward cross-sectional arc shape.

Here, the heat capacity of the bottom wall 212b are then rapidly enters the communication passage liquid (mixture of pure water or treatment solution) thermal radiation energy response delay from a Ku bottom wall 212b through lower recess 212 in 210a obtained so that that value, the bottom wall 212b is, similar the predetermined thinness t, is set to be thinner. However, even if the bottom wall 212b is thin as described above, the bottom wall 212b has a thickness sufficient to withstand pressure as a liquid fluid in the communication path 210a and is not easily damaged.

According to the above, the predetermined thinness t is predetermined wall portion position of the peripheral wall of the communication passage 210a such that (the bottom wall 212b) is damaged under the pressure from the liquid Ku, thermal radiation energy from the liquid but it is set to a value such that reach the temperature sensor eliminates through delay a predetermined wall portion (bottom wall 212b).

  The upstream side annular boss part 220 and the downstream side annular boss part 230 respectively extend in opposite directions from both end openings of the communication path 210a. The upstream side annular boss part 220 and the downstream side annular boss part 230 are These are respectively fluid-tightly screwed to the opposing opening ends of the both-side pipes P8 and P9 through both nuts 221 and 231 having a U-shaped cross section. The nut 221 is fitted to the opposite opening end of the pipe P8 at the annular bottom wall portion 221a and the cylindrical portion 221b, and is fluid-tightly connected to the upstream annular boss portion 220 through the opening portion of the cylindrical portion 221b. It is screwed. The nut 231 is fitted to the opposite opening end of the pipe P9 at the annular bottom wall portion 231a and the cylindrical portion 231b, and is fluid-tightly connected to the upstream annular boss portion 230 through the opening portion of the cylindrical portion 231b. It is screwed.

  Thereby, the liquid in the pipe P8 flows through the upstream annular boss part 220, the communication path 210a, and the downstream annular boss part 230 into the pipe P9. In addition, each internal diameter of the upstream side annular boss part 220 and the downstream side annular boss part 230 is the same as the internal diameter of the communicating path 210a. The substrate 200 is made of polytetrafluoroethylene (hereinafter referred to as PTFE).

  The detection apparatus main body 300 includes a housing 300a and a temperature detection circuit 300b assembled to the housing 300a. The housing 300 a is formed of polypropylene (hereinafter referred to as PP) so as to have a square tube 310, an upper wall 320, and a bottom wall 330, and the upper wall 320 closes an upper opening end 311 of the square tube 310. In this way, the upper opening end 311 is formed integrally. In addition, the bottom wall 330 is attached to the lower opening end 312 of the square tube 310 at the outer peripheral portion 331 to close the lower opening end 312.

  The housing 300 a configured as described above is assembled to the base body 200 by fitting the annular wall portion 333 of the bottom wall 330 into the opening end portion of the upper concave portion 211 of the base body 200. The annular wall portion 333 extends downward from the bottom surface of the bottom wall 330.

  The temperature detection circuit 300b includes a thermopile type temperature sensor 340, a signal processing circuit 350, and a connector 360. The temperature sensor 340 includes a casing 340a. The casing 340a includes a cylinder 341, an upper wall 342 that closes an upper opening end of the cylinder 341, and a bottom wall that closes a lower opening end of the cylinder 341. 343. Here, the outer peripheral portion of the upper wall 342 projects annularly outward from the upper opening end of the cylinder 341 in the radial direction as an annular flange portion 342a.

  Thus, in the casing 340 a, the annular flange portion 342 a is hermetically fitted into the large diameter portion 332 a of the stepped central hole portion 332 formed in the bottom wall 330, and the cylinder 341 has a small diameter of the stepped central hole portion 332. The portion 332b is hermetically fitted and extends downward. The large diameter portion 332 a is formed at the upper end portion of the stepped central hole portion 332, and the small diameter portion 332 b is formed at a portion other than the upper end portion of the stepped central hole portion 332.

  The temperature sensor 340 includes an infrared transmission filter 340b and a thermopile element 340c provided in the casing 340a. The infrared transmission filter 340b is attached from the inner side to the peripheral edge of the central opening 343a formed in the bottom wall 343 of the casing 340a at the outer periphery thereof, and the infrared transmission filter 340b is installed at the center thereof. The gas barrier film 400 (described later) is opposed through the central opening 343a of the bottom wall 343. The infrared transmission filter 340b transmits thermal radiation energy incident from below through the central opening 343a of the bottom wall 343 as infrared rays.

  The thermopile element 340c has a plurality of thermocouples connected in series. The thermopile element 340c is formed in the central opening of the substrate 340d supported in parallel with the bottom wall 343 in the casing 340a. And is supported so as to face the infrared transmission filter 340b. Thereby, the thermopile element 340c is supported in the casing 340a in a non-contact state with the inner surface of the casing 340a.

  Accordingly, the thermopile element 340c receives the infrared rays from the infrared transmission filter 340b through the central opening of the substrate 340d without being affected by the heat capacity of the casing 340a, and based on the received infrared rays, A temperature detection signal representing the temperature of the liquid is generated. This means that the temperature sensor 340 generates a temperature detection signal indicating the temperature of the liquid in the communication path 210a.

  The signal processing circuit 350 is supported in the housing 300a, and the signal processing circuit 350 processes the temperature detection signal from the temperature sensor 340 and outputs it. The connector 360 is provided at the upper end portion of the substrate 340d. The connector 360 outputs a temperature detection signal from the signal processing circuit 350 to the electronic control circuit 110 through both lead wires 361. Both the lead wires 361 extend outward through a cable gland 313 fitted in the central opening of the upper wall 320 of the housing 300a.

  The temperature detection device S1 includes a gas barrier film 400. The gas barrier film 400 transmits heat radiation energy from the liquid in the communication pipe 210a of the base body 200 to the temperature sensor 340 side, and also communicates with the temperature sensor S1. The corrosive gas released from the liquid in the passage 210a through the bottom wall 212b into the lower recess 212 is blocked from the upper recess 212a. In the first embodiment, the gas barrier film 400 is formed using PTFE or polychlorotrifluoroethylene (hereinafter referred to as PCTFE) so as to have the above characteristics. In the first embodiment, an MIR infrared sensor manufactured by SSC Corporation and its output processing circuit are employed as the temperature detection circuit 300b in the temperature detection device S1.

  As shown in FIG. 2, the temperature detection device S2 has the same configuration as the above-described temperature detection device S1, and this temperature detection device S2 includes both pipes P13, as shown in FIGS. Connected between P14. Specifically, the temperature detection device S2 is configured such that the upstream side annular boss part 220 and the downstream side annular boss part 230 are respectively connected to the pipes P13 and P14 on both side pipes via both nuts 221 and 231 having a U-shaped cross section. The opposite end side opening is screwed in a fluid-tight manner. Accordingly, the waste liquid in the pipe P13 flows through the upstream annular boss part 220, the communication path 210a, and the downstream annular boss part 230 of the temperature detection device S2 toward the pipe P14. The nut 221 is fitted to the opposed opening end of the pipe P13 at the annular bottom wall portion 221a and the cylindrical portion 221b, and is fluid-tightly connected to the upstream annular boss portion 220 through the opening portion of the cylindrical portion 221b. It is screwed. The nut 231 is fitted to the opposite opening end of the pipe P14 at the annular bottom wall portion 231a and the cylindrical portion 231b, and is fluid-tightly connected to the upstream annular boss portion 230 through the opening portion of the cylindrical portion 231b. It is screwed.

  In the present embodiment, the temperature detection device S2 outputs a temperature detection signal from the thermopile element 340c to the electronic control circuit 160 via the signal processing circuit 350, the connector 360, and both lead wires 361 (FIG. 1). And FIG. 2).

  In the first embodiment configured as described above, when the processing chemical solution from the on-off valve device 50 flows into the pipe P8 as described above, the processing chemical solution is upstream of the annular boss portion of the base body 200 of the temperature detection device S1. 220, the communication passage 210a, and the downstream side annular boss 230 pass through the inside of the pipe P9.

In such a flow process, when the treatment chemical liquid flowing inside the communication passage 210a radiates heat radiation energy, the heat radiation energy enters the lower recess 212 of the base body 200 through the bottom wall portion 212b. Shoot. Here, as described above, the bottom wall 212b of the lower recess 212 of the temperature detection device S1 is formed thin as described above. For this reason, the thermal radiant energy of the treatment chemical liquid can quickly enter the lower concave portion 212 through the bottom wall portion 212b. Further, the bottom wall portion 212b of the lower concave portion 212 is formed thin as described above. For this reason, the thermal radiant energy of the treatment chemical liquid can efficiently enter the lower concave portion 212 through the entire bottom wall portion 212b.

  Next, the heat radiation energy that has entered the lower concave portion 212 in this way enters the gas barrier film 400. Here, the gas barrier film 400 has the characteristic of blocking the corrosive gas and transmitting the heat radiation energy as described above.

For this reason, even if the treatment chemical solution releases the corrosive gas together with the radiation of the thermal radiation energy through the bottom wall portion 212b, the gas barrier film 400 blocks the corrosive gas from the inside of the upper concave portion 211. while being caused to enter the thermal radiation energy into the upper recess 2 11.

According to this, when caused to enter the thermal radiation energy into the upper recess 2 in 11, since the corrosive gas does not reach the temperature sensor 340, temperature sensor 340, corrode in contact with the corrosive gas Therefore, normal detection operation can be maintained. Moreover, such an effect can be achieved only by providing a simple structural member called the gas barrier film 400 as described above. In addition, since the base body 200 is formed of PTFE as described above, it does not corrode even when it comes into contact with the corrosive gas. Since both nuts 221 and 231 are also made of PTFE, they do not corrode even when they come into contact with the corrosive gas.

Thus, thermal radiation energy incident on the upper concave portion 2 in 11 as described above is transmitted through an opening 343a of the casing 340a of the temperature sensor 340 through the infrared transmission filter 340b as infrared. The infrared light transmitted in this way passes through the opening of the substrate 340d and is received by the thermopile element 340c.

  Accordingly, the thermopile element 340c generates a temperature detection signal indicating the temperature of the processing chemical in the communication path 210a based on the received infrared rays, and the signal processing circuit 350 outputs the temperature detection signal from the thermopile element 340c. The processed data is output to the electronic control circuit 110 through the connector 360 and both lead wires 361.

  Here, as described above, the thermal radiant energy of the treatment chemical solution passes through the entire bottom wall portion 212b quickly and efficiently enters the lower concave portion 212, so that the infrared light reception and temperature detection signal after that by the thermopile element 340c. Similarly, the output processing of the temperature detection signal and the output processing of the temperature detection signal by the signal processing circuit 350 can be performed quickly and satisfactorily with good responsiveness.

  For this reason, each flow control device 20, 40 is controlled by the electronic control circuit 110 based on the temperature detection signal from the signal processing circuit 350, and each pure water from the upstream portion to the downstream portion of each pipe P 1, P 2. Can be controlled quickly and satisfactorily without response delay. As a result, based on such flow rate control, the temperature and concentration of the processing chemical solution supplied into the pipe P9 by the on-off valve device 50 are well maintained with good responsiveness to the predetermined temperature and the predetermined concentration as described above. obtain.

  In addition, as described above, even when the mixed pure water from the on-off valve device 50 is supplied into the pipe P8 instead of the processing chemical solution, the temperature of the mixed pure water is mixed by the temperature detection device S1. Based on the temperature detection of pure water, the predetermined temperature can be maintained satisfactorily without delay in response, as in the case of the treatment chemical solution.

  Further, as described above, when the waste liquid from the aspirator 130 flows into the pipe P13, this processing chemical liquid flows into the upstream side annular boss part 220, the communication path 210a, and the downstream side annular boss part 230 of the base body 200 of the temperature detection device S2. It flows through the inside and into the pipe P14.

  In such a flow process, when the waste liquid in the communication path 210a of the temperature detection device S2 radiates thermal radiant energy, this thermal radiant energy is similar to the thermal radiant energy of the treatment chemical liquid, and the lower concave portion 212 of the substrate 200. The bottom wall portion 212b of the first passage quickly enters the lower recess 212.

Next, the heat radiation energy of the waste liquid incident in this manner is incident on the gas barrier film 400 of the temperature detection device S2, similarly to the heat radiation energy of the treatment chemical liquid. However, as described above, the gas barrier film 400 has a characteristic of blocking the corrosive gas and transmitting the thermal radiation energy to the upper recess 211 side . For this reason, even if the waste liquid releases the corrosive gas together with the radiation of the thermal radiant energy through the bottom wall portion 212b into the lower concave portion 212, the gas barrier film 400 causes the corrosive gas to flow into the upper concave portion 2. The heat radiation energy is allowed to enter the upper concave portion 211 while blocking from the inside of the upper portion 11 .

According to this, the temperature detecting device S2 are, when made incident thermal radiation energy of the waste liquid in the upper recess 2 in 11, since the corrosive gas of the waste liquid is prevented from reaching the temperature sensor 340, temperature sensor 340 Normal operation can be maintained without being corroded by contact with the corrosive gas.

Also in the temperature detecting device S2, thermal radiation energy incident on the upper concave portion 2 in 11 as described above, similarly to the above, it passes through the infrared transmission filter 340b as the infrared, and is received by the thermopile element 340 c. For this reason, the temperature sensor 340 generates a temperature detection signal indicating the temperature of the waste liquid in the communication path 210a based on the received infrared rays by the thermopile element 340c and outputs the temperature detection signal to the electronic control circuit 160.

  Here, as described above, also in the temperature detection device S2, the bottom wall portion 212b of the lower concave portion 212 is formed thin as described above over the entirety thereof. For this reason, the thermal radiant energy of the waste liquid can quickly enter the lower concave portion 212 through the entire bottom wall portion 212b. Therefore, subsequent infrared light reception by the thermopile element 340c of the temperature detection device S2 and output processing of the temperature detection signal by the temperature sensor 340 can be performed quickly as well.

  For this reason, the flow rate control device 150 quickly adjusts the flow rate of industrial water flowing into the pipe P11 under a control by the electronic control circuit 160 based on the temperature detection signal from the temperature sensor 340 of the temperature detection device S2 without a response delay. And can be controlled well. As a result, based on such flow rate control, the temperature of the waste liquid flowing into the pipe P13, the communication path 210a of the temperature detection device S2, and the pipe P14 can be well maintained with good responsiveness. Accordingly, the temperature resistance characteristics of both the pipes P13 and P14 can be favorably maintained without being disturbed.

  In both the temperature detection devices S1 and S2, the bottom wall portion 212b has a predetermined thickness t as described above, so that the treatment chemical solution, the mixed pure water, or the waste solution flows through the communication path 210a of the base body 200. Even if pressure is applied to the bottom wall 212b when flowing inside, the bottom wall 212b is not damaged.

  In both the temperature detection devices S1 and S2, the recess 210d of the base body 200 is closed by the bottom wall 330 of the housing 300a as described above. For this reason, without causing the corrosive gas in the recess 210d to leak to the outside of the temperature detection devices S1 and S2, based on the heat radiation energy incident in the recess 210d, The temperature of the mixed pure water can be detected by the temperature sensor 340 with good responsiveness.

  In both temperature detection devices S1 and S2, as described above, the temperature sensor 340 is located at a distance from the bottom wall portion 212b of the recess 210b, which is a part of the peripheral wall of the communication passage 210a. For this reason, the temperature sensor 340 is maintained in a non-contact state with the liquid in the communication path 210a. Therefore, the temperature sensor 340 is not affected by the heat capacity of the liquid, and the liquid is soiled or becomes a fluid resistance to the liquid, thereby hindering the smooth flow of the liquid. There is no.

Further, as described above, since the temperature sensor 340 is maintained in a non-contact state with the liquid in the communication path 210a, static electricity is generated by frictional contact with the inner wall of the liquid communication path 210a. However, the static electricity does not act on the temperature sensor 340 and the temperature sensor is not damaged.
(Second Embodiment)
FIG. 3 shows a main part of the second embodiment of the present invention. In the second embodiment, a non-contact temperature detection device S3 is employed instead of the temperature detection device S1 described in the first embodiment, and the temperature detection device S3 is the same as the first embodiment. Are arranged between the two pipes P3a and P3b instead of the pipe P3 described above. Note that the pure water in the downstream portion of the pipe P1 and the pure water in the downstream portion of the pipe P2 described in the first embodiment flow into the pipe P3a and are mixed.

  The temperature detection device S3 has a configuration in which the gas blocking film 400 is eliminated as shown in FIG. 4 in the temperature detection device S1 described in the first embodiment. The side annular boss portion 220 and the downstream side annular boss portion 230 are thread-tightly screwed to the opposing end side opening portions of the pipe P3a and the pipe P3b via both nuts 221 and 231 having a U-shaped cross section, respectively. Yes. The nut 221 is fitted to the opposed opening end of the pipe P3a at the annular bottom wall portion 221a and the cylindrical portion 221b, and is fluid-tightly connected to the upstream annular boss portion 220 through the opening portion of the cylindrical portion 221b. It is screwed. The nut 231 is fitted to the opposite opening end of the pipe P3b at the annular bottom wall portion 231a and the cylindrical portion 231b, and is fluid-tightly connected to the upstream annular boss portion 230 through the opening portion of the cylindrical portion 231b. It is screwed.

  Thereby, in the temperature detection device S3, the mixed pure water in the pipe P3a flows toward the pipe P3b through the upstream side annular boss part 220, the communication path 210a, and the downstream side annular boss part 230. Accordingly, the temperature detection circuit 300b of the temperature detection device S3 sets the temperature of the mixed pure water based on the thermal radiation energy from the mixed pure water flowing in the communication path 210a, similarly to the temperature detection circuit of the temperature detection device S1. A temperature detection signal is generated.

  In the second embodiment, the flow rate control devices 20 and 40 described in the first embodiment are respectively supplied to the downstream portion of the pipe P2 and the inflow amount of pure water at room temperature into the downstream portion of the pipe P1. The inflow amount of the high-temperature pure water is controlled to maintain the temperature of the mixed pure water at a predetermined temperature under the control of the electronic control circuit 110 based on the detection output of the temperature detection device S3. Other configurations are the same as those in the first embodiment.

  In the second embodiment configured as described above, when the pure water in the downstream portions of both pipes P1 and P2 flows into the pipe P3a and is mixed, the mixed pure water is added to the base 200 of the temperature detection device S3. The fluid flows through the upstream annular boss 220, the communication passage 210a, and the downstream annular boss 230, and flows into the on-off valve device 50 from the pipe P3b.

  In such a flow process, the mixed pure water flowing inside the communication path 210a enters its thermal radiation energy into the lower recess 212 of the temperature detection device S3 through its bottom wall 212b. In the second embodiment, since the mixed pure water does not contain a component that releases corrosive gas like chemical liquid and waste liquid, the gas barrier film described in the first embodiment is eliminated. Therefore, the heat radiation energy radiated into the lower concave portion 212 as described above directly enters the upper concave portion 211 and is received as infrared rays by the thermopile element 340c of the temperature sensor 340 of the temperature detection device S3. The

  Here, the bottom wall 212b of the lower recess 212 of the temperature detection device S3 is formed thin like the bottom wall 212b of the temperature detection device S1. For this reason, the thermal radiant energy of the mixed pure water can be rapidly received with high responsiveness by the thermopile element 340c through the bottom wall portion 212b.

  Along with this, the temperature sensor 340 of the temperature detection device S3 quickly generates a temperature detection signal indicating the temperature of the mixed pure water in the communication path 210a based on the received infrared ray of the thermopile element 340c with high responsiveness. Similarly, it is output to the electronic control circuit 110.

  For this reason, each flow control device 20, 40 is controlled by the electronic control circuit 110 based on the temperature detection signal from the temperature detection device S3, and each pure water from the upstream portion to the downstream portion of each pipe P1, P2. In other words, the flow rate of the mixed pure water flowing into the on-off valve device 50 can be quickly and satisfactorily controlled without delay in response before flowing into the on-off valve device 50.

As a result, based on such flow rate control, the temperature and concentration of the processing chemical solution supplied into the pipe P9 by the on-off valve device 50 or the temperature of the mixed pure water is set to the predetermined temperature and the predetermined concentration as described above. Good responsiveness can be maintained. Other operations and effects are the same as those of the first embodiment.
(Third embodiment)
FIG. 5 shows a main part of the third embodiment of the present invention. In the third embodiment, the temperature detection device S4 is disposed between the pipes P8 and P9 instead of the temperature detection device S1 described in the first embodiment.

  The temperature detection device S4 includes a base body 500 and a detection device body 600 corresponding to the base body 200 and the detection device body 300 of the temperature detection device S1. The base 500 includes a square tube 510 and a bottom wall member 520. As can be seen from FIG. 5 or FIG. 6, the rectangular cylinder 510 has rectangular cutout portions 511a at the left and right side walls 511. The rectangular cutout portions 511a are arranged in the left and right sides so as to face each other. It is formed on both side walls 511 (see FIG. 5). Here, as illustrated in FIG. 6, each rectangular notch 511 a has a predetermined width in the left-right direction and has a rectangular shape extending from the center in the vertical direction of the left and right side walls 511 to the center of the lower ends of the left and right side walls 511. Notches are formed.

  Further, as shown in FIG. 5 or FIG. 6, the square cylinder 510 has semicircular notches 511 b on the left and right side walls 511, respectively, and these semicircular notches 511 b face each other. Thus, it is formed in the left and right side walls 511 (see FIG. 5). In addition, each semicircular cutout 511b is halfway upward from each upper edge around the center in the left-right direction of the upper edge of each rectangular cutout 511a so as to open into each rectangular cutout 511a. It is formed in a circular shape. In addition, the diameter of each semicircle notch part 511b is shorter than the horizontal direction width | variety of each rectangular notch part 511a (refer FIG. 6).

  The bottom wall member 520 includes a bottom wall portion 521, left and right side wall portions 522, and a pair of hooks 523 on the left and right sides. As can be seen from FIG. 5 or FIG. 6, the left and right side wall portions 522 have a horizontal width equal to the horizontal width of each rectangular notch 511 a of the square tube 510, and are upward from the central portions on the left and right ends of the bottom wall portion 521. It extends in an L shape.

  Each of the left and right side wall portions 522 has a semicircular cutout portion 522a, and each of the semicircular cutout portions 522a has a semicircular shape downward from the center of each upper edge of the left and right side wall portions 522. Is formed. However, in each of the left and right side wall portions 522, the semicircular cutout portions 511b and 522a corresponding to each other have the center and radius of each semicircular cutout portion 522a so as to be equal to the outer diameter of the communication pipe 530 (described later). Are the same as the center and radius of each semicircular notch 511b.

  Thus, the left and right side wall portions 522 are fitted upward in the respective rectangular cutout portions 511a from the lower opening end portions so that the bottom wall portion 521 is joined to the lower end opening portion 512 of the rectangular tube 510. Thus, the bottom wall member 520 is assembled to the rectangular tube 510 so as to close the lower end opening of the rectangular tube 510 and each rectangular notch 511a. Along with this, both through hole portions for supporting the communication pipe 530 (described later) in a penetrating manner are formed by the respective semicircular cutout portions 511b and 522a.

  As illustrated in FIG. 6, the pair of hooks 523 on both the left and right sides extend upward along the left and right side wall portions 511 into the rectangular tube 510 from the left and right side front and rear end portions of the bottom wall portion 521. Each extension end of the left pair of hooks 523 is formed so that each claw 523a bends to the left in an L shape, and each extension end of the pair of right hooks 523 has Each nail | claw part 523a is formed so that it may be bent in the L shape to the right side.

  In the third embodiment, since the above-described square tube 510 and the bottom wall member 520 are formed of the PTFE or PFA described in the first embodiment, each hook 523 has elasticity. . For this reason, when the bottom wall member 520 is assembled to the square tube 510 as described above, the pair of left hooks 523 are locked by the respective claw portions 523a against the elasticity of the left wall portions 511. The pair of right hooks 523 are engaged with the hooks 523c of the right side wall 511 against the elasticity of the pair of right hooks 523a. Lock removably. As a result, the bottom wall member 520 is firmly assembled to the square tube 510.

  In addition, the base body 500 has a communication pipe 530. The communication pipe 530 is supported in a penetrating manner in the both through-hole portions of the square tube 510, and the communication pipe 530 has both nuts 533 having a U-shaped cross section at both open end portions 531 and 532 thereof. Via 534, the pipes P8 and P9 are screwed in a liquid-tight manner in the opposing opening ends. Here, the nut 533 is fitted to the opposed opening end of the pipe P8 at the annular bottom wall portion 533a and the cylindrical portion 533b, and is liquidated to the opening end portion 531 of the communication pipe 530 by the opening portion of the cylindrical portion 533b. It is tightly screwed. Further, the nut 534 is fitted to the opposed opening end of the pipe P9 at the annular bottom wall portion 534a and the cylindrical portion 534b, and liquid-tight to the opening end portion 532 of the communication pipe 530 by the opening portion of the cylindrical portion 534b. Screwed on. As shown in FIG. 5, the communication pipe 530 is supported by the rectangular tube 510 so as not to escape by sandwiching the outer peripheral portions of the two through-hole portions with a pair of flange portions 531 a and 532 a on both the left and right sides. Yes.

  A predetermined annular wall portion 535 is formed at the axially central portion of the peripheral wall of the communication pipe 530 by cutting along the outer peripheral portion of the axially central portion so as to have the predetermined thickness t. ing. In addition, by forming the annular wall portion 535 in this way, the formation of the annular wall portion 535 is facilitated. Further, in FIG. 5, reference numeral 514 indicates a small hole portion for venting gas formed in the upper end portion of the left side wall 511 of the square cylinder 510.

  The detection device main body 600 includes a housing 600a and the temperature detection circuit 300b described in the first embodiment. The housing 600a is formed of PP so as to have a square tube 610, an upper wall 620, and a bottom wall 630, and the upper wall 620 closes the upper open end 611 of the square tube 610. It is formed integrally with the part 611.

  The bottom wall 630 is formed by coaxially and integrally forming a disc-shaped central wall portion 632 on the inner peripheral side of the outer peripheral wall portion 631. The bottom wall 630 is formed by the outer peripheral wall portion 631. The lower opening end 612 is attached to the lower opening end 612 of the square tube 610 and closed.

  In the third embodiment, the central portion of the bottom wall 630 is cut out into a truncated cone shape from below, so that the outer peripheral wall portion 631 ends upward from the lower surface of the outer peripheral wall portion 631 at its inner peripheral surface 631a. It is formed in a constricted shape. Accordingly, the disk-shaped central wall 632 is formed in a thin shape on the upper end side of the bottom wall 630. As a result, a trapezoidal cross-sectional space is formed in the bottom wall 630 by the lower opening surface thereof, the inner peripheral surface 631 a of the outer peripheral wall portion 631, and the lower surface of the disc-shaped central wall portion 632.

  Thus, the housing 600a configured as described above is coaxially fitted into the upper open end 513 of the rectangular tube 510 at the annular lower end 631b of the outer peripheral wall 631 of the bottom wall 630, and the rectangular tube 510 is assembled. For this reason, the trapezoidal cross-sectional space is integrated with the inside of the square tube 510. In other words, an integral space is formed between the inner peripheral surface 631 a of the outer peripheral wall portion 631, the lower surface of the disk-shaped central wall portion 632, the inside of the square tube 510, and the inner surface of the bottom wall member 520. The annular lower end 631b is formed along the outer periphery of the outer peripheral wall 631.

  In the temperature detection circuit 300b, the thermopile type temperature sensor 340 is airtightly fitted from above into an opening 632a formed in the disc-shaped central wall 632 of the bottom wall 630 in the cylinder 341 of the casing 340a and downward. The temperature sensor 340 extends and is seated on the opening 632a of the disk-shaped central wall 632 at the annular flange 342a of the casing 340a.

  Thereby, the temperature sensor 340 is opposed to the annular wall portion 535 of the communication pipe 530 in the square tube 510 by the bottom wall 343 of the casing 340a. Note that the signal processing circuit 350 and the connector 360 described in the first embodiment are accommodated in the housing 600a. Further, both the lead wires 361 described in the first embodiment extend outward through a cable gland 621 fitted in the central opening of the upper wall 620 of the housing 600a.

  Further, the temperature detection device S4 includes a gas barrier film 700, and the gas barrier film 700 is disposed on the outer peripheral wall of the bottom wall 630 within the upper opening end 513 of the square tube 510 by the outer peripheral portion thereof. Attached to the annular lower end of the part 631. Thereby, the gas barrier film 700 isolates the trapezoidal space in the bottom wall 630 from the inside of the square tube 510. In this embodiment, the gas barrier film 700 is formed of the same material as that of the gas barrier film 400 described in the first embodiment so as to have the same characteristics as the gas barrier film 400. ing. Other configurations are the same as those in the first embodiment.

  In the third embodiment configured as described above, as described above, the integrated space is formed through the inside of the square tube 510, and the inner peripheral surface 631a of the outer peripheral wall portion 631 and the lower surface of the disc-shaped central wall portion 632 are provided. And the inner surface of the bottom wall member 520. Since the space formed in this way includes the inside of the square tube 510, it is considerably wider than the recess 210d of the base body 200 described in the first or second embodiment. Therefore, the temperature of the base body 500, that is, the square tube 510 and the bottom wall member 520 is not easily transmitted to the temperature sensor 340.

  For this reason, the heat radiation energy radiated from the liquid such as the processing chemical solution or mixed pure water in the communication pipe 530 is not affected by the temperature of the base body 500 and the heat capacity of the predetermined wall portion 535 of the communication pipe 530. Quickly enters the temperature sensor without being delayed by. As a result, according to the non-contact temperature detection device S4, the temperature of the liquid in the communication pipe 530 can be detected well with good responsiveness without being affected by the temperature of the base 500. Other operations and effects are the same as those of the first embodiment.

  In the third embodiment, the temperature detection device S4 may be employed in place of the temperature detection device S2 as well as the temperature detection device S1. In this case, the temperature detection device S4 is connected between the pipes P13 and P14 instead of the temperature detection device S2. According to this, in the detection of the temperature of the waste liquid flowing into the communication pipe 530 of the temperature detection device S4 from the pipe P13, the same effects as those of the third embodiment can be achieved.

  In the third embodiment, the temperature detection device S4 may be employed instead of the temperature detection device S3 described in the second embodiment, and may be connected between the pipes P3a and P3b. However, the gas barrier film 700 is abolished.

  According to this, in the detection of the temperature of the mixed pure water flowing into the communication pipe 530 of the temperature detection device S4 from the pipe P3a, the third embodiment is achieved while achieving the effects described in the second embodiment. The same effect can be achieved.

In carrying out the present invention, the following various modifications are possible without being limited to the above embodiments.
(1) In the base body 200 of both the temperature detection devices S1 and S2, in addition to the communication path 210a, another communication path is adopted, and the other communication path is parallel to the communication path 210a and below the recess 210b. A purge gas (for example, nitrogen gas) is formed so as to pass through the rectangular column 210 so as to pass through the recess 212, and an upstream portion of the other communication passage, the lower recess 212, and the other communication passage. You may make it flow through the downstream part.

  Here, the purge gas is not limited to the liquid in the communication passage 210a even if the thermal radiation energy radiated from the liquid in the communication passage 210a through the bottom wall portion 212b into the recess 210b is transmitted to the temperature sensor 340. The corrosive gas released from the temperature sensor 340 through the bottom wall 212b into the recess 210b is blocked from the temperature sensor 340. The purge gas and the other communication passage may be grasped as a gas blocking means together with the gas blocking film 400 or instead of the gas blocking film 400.

According to this, the temperature sensor 340 detects the temperature of the liquid in the communication path 210a under the blocking of the corrosive gas by the purge gas in the lower recess 212. Therefore, when detecting the temperature of the liquid, the temperature sensor 340 can always maintain a normal detection operation without being corroded by the corrosive gas.
(2) In the housing 300a of the detection apparatus main body 300 described in the above embodiment, the square tube 310 and the upper wall 320 may be eliminated. The upper wall 320 may be grasped as a wall member that closes the recess 210b of the trapezoidal square column part 210 of the base body 200 regardless of the configuration of the housing 300a.
(3) The present invention may be applied to a batch processing system instead of the single wafer processing system. According to this batch type processing system, a plurality of semiconductor wafers are collectively subjected to processing of a processing chemical solution or cleaning with mixed pure water in the batch type processing system. Also by this, substantially the same operation and effect as described in the above embodiments can be achieved in detecting the temperature of the processing chemical solution and the mixed pure water.
(4) The forming material of various constituent members such as the base bodies 200 and 500, the housings 300a and 600a, and the pipes P1 to P11 of the temperature detecting device is not limited to PFA, and the constituent members that come into contact with the chemical solution among the various constituent members. Then, PTFE may be sufficient, and PP or PVC may be sufficient as the structural member which does not contact a chemical | medical solution among the said various structural members.
(5) The material for forming the gas barrier films 400 and 700 is not limited to PCTFE or PTFE, but may be a fluororesin, and is generally a material having a permeability to thermal radiation energy and a barrier to the above chemical solution. I just need it.
(6) The communication path 210a is not limited to a linear shape, and may be formed in an appropriate shape such as a crank shape or a meandering shape. For example, the peripheral wall of the communication path 210a may be bent in a crank shape toward the lower concave portion 212 at a peripheral wall portion including a predetermined wall portion corresponding to the bottom wall portion 212b of the lower concave portion 212.

Further, even when the communication path 210a is linear, a predetermined wall portion corresponding to the bottom wall 212b of the lower recess 212 in the peripheral wall of the communication path 210a is opened to the lower recess 212 in a cylindrical shape. The bottom wall 212b may be formed so as to be formed as a cylindrical opening and to close the opening end of the cylindrical opening.
(7) In implementing the present invention, the temperature sensor 340 is not limited to the one described in the above embodiment, and may be any infrared sensor that incorporates a thermopile element.
(8) The present invention may be applied to a liquid crystal panel manufacturing apparatus or the like instead of the semiconductor manufacturing apparatus.
(9) Instead of the aspirator 130, a pump may be employed.

1 is a block circuit diagram showing a first embodiment of the present invention applied to a single wafer processing system of a semiconductor manufacturing apparatus. FIG. It is an expanded fracture sectional view of the non-contact-type temperature detection apparatus of FIG. It is a block diagram which shows the principal part of 2nd Embodiment of this invention applied to the said single wafer processing system. It is an expanded fracture sectional view of the non-contact-type temperature detection apparatus of FIG. It is an expanded fracture sectional view which shows the non-contact-type temperature detection apparatus of 3rd Embodiment of this invention. It is a left view of the base | substrate of FIG.

Explanation of symbols

200, 500 ... base, 210a ... communication path, 210b ... recess, 212b ... bottom wall,
330 ... Bottom wall, 340 ... Thermopile type temperature sensor, 400, 700 ... Gas barrier film,
510 ... Square tube, 512 ... Lower open end, 513 ... Other open end, 530 ... Communication pipe,
535 ... An annular wall.

Claims (4)

A through-shaped communication passage ing of a fluororesin such as PTFE and ingredients Bei, so as to open the mouth toward the recess outward a predetermined wall portion of the peripheral wall of the communication passage as the bottom wall portion, corrosive gas Depending on the substrate formed of a resin that is not easily corroded ,
A wall member assembled to the base so as to close the recess;
Before contain components that release said recess said bottom wall portion and the corrosive gas a thermopile type temperature sensor that will be supported by the wall member so as to face at a distance to the said base Killen A thermopile type temperature sensor for detecting the temperature of the liquid based on thermal radiant energy radiated from the liquid flowing through the passage into the recess through the bottom wall ;
The thermal radiant energy radiated into the recess of the base is transmitted to the temperature sensor, and the corrosive gas released from the liquid into the recess through the bottom wall is shielded from the temperature sensor. A gas blocking means provided on the base body ,
The peripheral wall of the communication passage is thin at the predetermined wall portion so that the liquid does not damage the predetermined wall portion with the pressure, and the thermal radiation energy from the liquid is responsive. A non-contact temperature detecting device formed so as to be thin enough to pass through the predetermined wall portion quickly and efficiently. Before SL gas shutoff means, the thermal radiation energy emitted by a gas barrier film which is supported so as to isolate the temperature sensor from the bottom wall portion in the recess in said recess to said temperature sensor The non-contact type temperature detecting device according to claim 1, wherein the non-contact type temperature detecting device is a gas barrier film that transmits the corrosive gas that is transmitted and released into the recess from the temperature sensor . A pipe made of fluororesin such as PTFE, which has a cylinder and a side wall member that closes one side opening end of the cylinder, and is inserted into the peripheral wall of the cylinder so as to cross the shaft. A base body comprising a communication pipe formed with a predetermined wall portion so as to face the other open end of the cylinder;
A side wall member that closes the other side opening end of the cylinder, and a direction in which the communication pipe is opposed to the predetermined wall part away from the predetermined wall part from the other side opening end of the cylinder. The other side wall member formed to be concave toward
The predetermined wall portion of the communication tube is supported by the concave facing portion of the other side wall member so as to face the predetermined wall portion of the communication tube with an interval, and from the liquid flowing through the communication tube. A thermopile type temperature sensor for detecting the temperature of the liquid based on the thermal radiant energy radiated into the cylinder via,
The predetermined wall portion of the communication pipe is thin enough that the liquid does not damage the predetermined wall portion due to the pressure thereof, and the thermal radiant energy from the liquid is quickly and responsively responsive. A non- contact temperature detecting device formed to be thin enough to reach a temperature sensor through a predetermined wall portion . The liquid contains a component that releases corrosive gas,
The base body and the communication pipe are formed of a resin that is not easily corroded by the corrosive gas,
The temperature sensor is supported so as to be isolated from the predetermined wall portion in a space formed between the concave facing portion of the other side wall member and the one side wall member via the inside of the tube. 4. A gas barrier film is provided for transmitting the thermal radiation energy radiated to the temperature sensor to the temperature sensor and blocking the corrosive gas released into the cylinder from the temperature sensor. The non- contact type temperature detection device described in 1 .