JP5264469B2 - Antenna device and adjustment method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an antenna device to which a dielectric substrate 22 of the same shape dimension for an antenna device of a different dimension also can be used, and further to provide a method for adjusting the antenna device which shifts an arrangement position of the dielectric substrate 22 to make adjustment simply with respect to a change of a resonance frequency caused by a variation of a dielectric constant in the dielectric substrate 22. <P>SOLUTION: In the antenna device in which the flat dielectric substrate 22 is arranged on a conductive base 10 serving as a GND electrode, and a radiation electrode 14 is arranged on an upper face of this dielectric substrate 22, the dielectric substrate 22 is configured in such a way that an empty space is provided at a central part, and divided into four parts when viewed from above to support a fringe part of the radiation electrode 14 substantially circularly. One or all arrangement positions of four members of the dielectric substrate 22 are shifted for the radiation electrode 14, so that two resonance frequencies or one of the two resonance frequencies is adjusted. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a planar antenna device in which a flat dielectric substrate is disposed on a conductor base, and a radiation electrode is disposed on the upper surface of the dielectric substrate. The present invention also relates to a method for adjusting the resonance frequency in the antenna device.

In the conventional planar antenna device, as shown in FIG. 20 , an open space is provided in the central portion on the conductor base 10 as the GND electrode and is flat and has a rectangular outer shape when viewed from above. The dielectric substrate 12 is disposed, the radiation electrode 14 is disposed so as to be supported by the upper surface of the dielectric substrate 12, and the power supply terminal 16 is disposed at an appropriate position of the radiation electrode 14. There is something. Such a technique is disclosed in Japanese Patent Application Laid-Open No. 2005-51576. Further, as shown in FIG. 21 , a dielectric base 13 having a flat shape with no empty space at the center and a rectangular shape when viewed from above is disposed on a conductor base 10 as a GND electrode . The radiation electrode 14 is disposed so as to be supported on the upper surface of the base material 13, and the feeding terminal 16 is disposed through the hole formed in the dielectric base material 13 at an appropriate position of the radiation electrode 14. Some are configured.
Japanese Patent Laid-Open No. 2005-51576

In the conventional technique shown in FIG. 20 proposed in the above-mentioned Patent Document 1 and the like, the dielectric base 12 is annular, and an empty space is provided in the center thereof. The amount of material is small. However, the outer dimensions of the dielectric substrate 12 are constant, and another antenna substrate 12 having a different size is required for an antenna device having a different size. Further, even in the conventional example shown in FIG. 21 , naturally, another dielectric substrate 13 having a different size is required for an antenna device having a different size. Here, it is economical if a dielectric base material having the same shape and dimension can be used for antenna apparatuses having different dimensions. In addition, the dielectric base material may vary in dielectric constant for each production lot, and the resonance frequency may change. Therefore, conventionally, adjustment is made by providing a notch in the radiation electrode 14 or by shaving it against a change in the resonance frequency due to variations in the dielectric constant of the dielectric substrate. The adjustment operation of the resonance frequency is complicated, and the operation of reliably removing the shavings generated by providing or cutting out the notches in the radiation electrode 14 is also complicated.

  Therefore, the present invention has been made in view of the circumstances as described above, and an object of the present invention is to provide an antenna device that can use dielectric substrates having the same shape and size even for antenna devices of different dimensions. Another object of the present invention is to provide an antenna device adjustment method that can be easily adjusted by shifting the position where the dielectric base material is disposed with respect to a change in the resonance frequency due to variations in the dielectric constant of the dielectric base material.

In order to achieve such an object, in the antenna device of the present invention, a flat dielectric substrate is disposed on a conductor base serving as a GND electrode, and a radiation electrode is disposed on the upper surface of the dielectric substrate. In the antenna device, the radiation electrode has a substantially rectangular shape in which one corner or two opposite corners are slightly cut off in a chamfered shape, and the dielectric substrate is provided with an empty space in a central portion and the radiation electrode. The four corners are each divided into four so as to support the four corners so as to form four substantially L-shapes, and the diagonal direction of the radiation electrode is set to 1 from the central position of the radiation electrode so as to be the current excitation direction. The power supply terminals are provided so as to be shifted to one side .

Furthermore, the antenna device adjustment method of the present invention is the antenna device according to claim 1 , wherein all the disposition positions of the four substantially L-shaped members of the dielectric base material are arranged on the inner side with respect to the radiation electrode. The resonance frequency can be adjusted to be lower.

The antenna device according to claim 1 , wherein all the disposition positions of the four substantially L-shaped members of the dielectric base material are expanded outward with respect to the radiation electrode to increase the resonance frequency. Can be adjusted.

2. The antenna device according to claim 1 , wherein one of the substantially L-shaped members of the dielectric base material that supports a corner having a long diagonal line where a corner of the radiation electrode is not cut off with respect to the radiation electrode. One or two arrangement positions can be shifted inward or outward to adjust the low resonance frequency with the long diagonal direction as the excitation direction.

The antenna device according to claim 1 , wherein one of the substantially L-shaped members of the dielectric base material that supports a short diagonal corner where the corner of the radiation electrode is cut off with respect to the radiation electrode. Alternatively, the two arrangement positions can be shifted inward or outward to adjust the high resonance frequency with the short diagonal direction as the excitation direction.

2. The antenna device according to claim 1 , wherein the four substantially L-shaped members of the dielectric base material are disposed with respect to the radiation electrode in a direction passing through the center of the radiation electrode and the feeding terminal. The resonance frequency can be adjusted by narrowing inwardly or shifting outwardly.

2. The antenna device according to claim 1 , wherein the four substantially L-shaped members of the dielectric base material are disposed with respect to the radiation electrode in a direction passing through the center of the radiation electrode and the feeding terminal. The resonance frequency can be adjusted by narrowing inward or expanding outward in the orthogonal direction.

In the antenna device according to claim 1, a dielectric substrate which is disposed on the conductor base, is divided into four when viewed from above so as to support the four corners of the radiation electrode, respectively Since it has four substantially L-shapes, it is possible to deal with antenna devices of different dimensions by narrowing the position of the dielectric base material disposed on the conductor base inward or expanding outward. it can. Therefore, it is economical that a dielectric substrate having the same shape and dimension can be used. In addition, since the four corners of the rectangular radiation electrode are respectively supported by the substantially L-shaped dielectric substrate, the radiation electrode can be reliably disposed with a simple configuration. Furthermore, in an antenna in which the diagonal line of the rectangular radiation electrode is the current excitation direction, the current concentrates at the four corners of the radiation electrode, but the four corners can be securely fixed by the dielectric substrate, and the GND electrode The distance from the conductor base does not change due to vibration or the like, and the antenna characteristics are stable.

In the antenna device adjustment method according to claim 2, in the antenna device according to claim 1 , if the resonance frequency shifts to a higher side due to variations in the dielectric constant of the dielectric substrate, the dielectric substrate By narrowing the arrangement position inward, the resonance frequency can be lowered and adjusted to a predetermined frequency. Since the resonance frequency can be adjusted to a predetermined frequency by narrowing the arrangement position of the dielectric base material, it is not necessary to cut or scrape the radiating electrode as in the past, and further, the radiating electrode is not cut or cut. There is no shavings caused by shaving. Naturally, the trouble of removing the shavings can be saved.

In the antenna device adjustment method according to claim 3, in the antenna device according to claim 1 , if the resonance frequency shifts to a lower side due to variations in the dielectric constant of the dielectric substrate, the dielectric substrate By enlarging the arrangement position to the outside, the resonance frequency can be increased and adjusted to a predetermined frequency. Since the resonance frequency can be adjusted to a predetermined frequency by expanding the position of the dielectric substrate to the outside, there is no need to cut or cut the radiation electrode as in the past, and the radiation electrode is notched. Or shavings generated by shaving do not occur. Naturally, the trouble of removing the shavings can be saved.

5. The antenna device adjustment method according to claim 4, wherein the antenna device according to claim 1 supports a corner having a long diagonal line where a corner of the radiation electrode is not cut off with respect to the radiation electrode. By shifting one or two arrangement positions of the four substantially L-shaped members of the material inward or outward, a low resonance frequency with the long diagonal direction as the excitation direction can be adjusted. Due to the variation in the dielectric constant of the dielectric substrate, it is effective to adjust the low resonance frequency of one of the two resonance frequencies.

In the adjustment method of an antenna device according to claim 5, in the antenna device according to claim 1, a dielectric substrate for supporting the corner as a short diagonal, which cut off the corners of the radiation electrode to the radiation electrode By shifting one or two positions of the four substantially L-shaped members to the inside or the outside, a high resonance frequency with the short diagonal direction as the excitation direction can be adjusted. Due to variations in the dielectric constant of the dielectric substrate, it is effective to adjust one of the two resonance frequencies.

The antenna device adjustment method according to claim 6, wherein in the antenna device according to claim 1 , the disposition positions of the four substantially L-shaped members of the dielectric base material with respect to the radiation electrode are radiated. The entire resonance frequency can be adjusted by adjusting the area where the radiation electrode and the dielectric substrate are in contact with each other, by narrowing inward or expanding outward in the direction passing through the center of the electrode and the feeding terminal. . It is effective to adjust the entire two resonance frequencies with respect to variations in the dielectric constant of the dielectric substrate.

In the antenna device adjustment method according to claim 7, in the antenna device according to claim 1 , the disposition positions of the four substantially L-shaped members of the dielectric base material with respect to the radiation electrode may be radiated. By adjusting the area where the radiation electrode and the dielectric substrate are in contact with each other by adjusting the area where the radiation electrode and the dielectric substrate are in contact with each other by narrowing inward or expanding outward in the direction orthogonal to the direction passing through the center of the electrode and the feeding terminal, Can be adjusted. It is effective to adjust the entire two resonance frequencies with respect to variations in the dielectric constant of the dielectric substrate. The change in impedance is different from the adjustment method according to the eighth aspect. Therefore, the adjustment method according to any one of claims 6 and 7 can be selected according to which impedance is adjusted.

Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is an exploded perspective view of an antenna device according to a first embodiment of the present invention. FIG. 2 is a diagram showing the gain of the antenna device of the present invention shown in FIG. FIG. 3 is a diagram showing the gain of the conventional antenna apparatus shown in FIG. 21 for comparison.

  In the first embodiment of the antenna device according to the present invention shown in FIG. 1, an open space is provided in the central portion on the conductor base 10 as the GND electrode, and the outer shape is substantially flat as viewed from above. A dielectric base 22 divided into four in a rectangular ring shape is disposed. The dielectric substrate 22 is composed of four substantially L-shaped portions. And the radiation electrode 14 is arrange | positioned so that four corners may be supported by the four substantially L-shaped upper surfaces of the dielectric base material 22, respectively. Further, the power supply terminal 16 is provided so as to be shifted to one side from the center position of the radiation electrode 14, and the diagonal direction of the radiation electrode 14 is configured to be the current excitation direction. The radiation electrode 14 has a substantially rectangular shape in which two opposite corners of one diagonal line are slightly cut off in a chamfered shape.

In the antenna apparatus of the present invention shown in FIG. 1, as shown in FIG. 2, a gain of 2.8 dBic was obtained at 0 ° of the zenith and an average gain of −1.6 dBic was obtained. In the conventional antenna device shown in FIG. 21 , as shown in FIG. 3, the gain was 3.1 dBic at 0 ° of the zenith, and the gain was -1.7 dBic on average. In the antenna characteristics shown in FIGS. 2 and 3, the outer dimensions of the dielectric base materials 12 and 22 and the radiation electrode 14 are the same and are compared. Practically, it is sufficient that the gain is 0 dBic or more at 0 ° of the zenith, and the antenna device of the present invention has no problem in practical use. In addition, the axial ratio of the antenna apparatus of the present invention is 2.2 dB, whereas the axial ratio of the conventional antenna apparatus is 2.1 dB. In practical use, it was confirmed that the antenna device of the present invention and the conventional antenna device can obtain equivalent antenna characteristics.

  In the antenna device of the present invention, the dielectric base material 22 is not limited to the substantially L-shaped one as described above. As shown in FIG. 4, the dielectric base material 24 is provided with an empty space in the center and is flat and has a substantially rectangular annular shape when viewed from above, and is divided into four substantially four L-shapes. However, a triangular portion may be provided inside a corner portion that forms a substantially L shape. Further, as shown in FIG. 5, the triangular portion provided inside the corner portion that forms a substantially L-shape is enlarged, and the dielectric base material 26 has four substantially triangular shapes with an empty space in the center portion. It may be arranged so as to provide.

The dielectric base materials 22, 24, and 26 shown in FIGS. 1, 4 and 5 are suitable for supporting the four corners of the substantially rectangular radiation electrode 14, respectively. Here, in the radiation electrode 14, as shown in FIG. 6A, two corners of one diagonal line are slightly cut off in a chamfered shape, and the length d1 of the diagonal line is not cut off. It is set slightly shorter than the length d2 of the other diagonal line. A high frequency resonance frequency current is excited in the direction of the short diagonal length d1, and a low frequency resonance frequency current is excited in the direction of the other long diagonal length d2. In addition, as shown in FIG. 6B, the radiation electrode 14 has one corner of one diagonal line slightly cut off in a chamfered shape, and the length d1 of the diagonal line is the other side where the corner is not cut off. It may be set slightly shorter than the length d2 of the diagonal line. In such a configuration, the four corners of the rectangular radiating electrode can be reliably supported by the dielectric base materials 22, 24, and 26, so that the radiating electrode 14 can be reliably arranged with a simple configuration, and a diagonal line can be formed. The resonance frequency current in the excitation direction is concentrated at the four corners of the radiation electrode 14, but the four corners can be securely fixed by the dielectric base materials 22, 24, and 26, so that the distance to the conductor base 10 as the GND electrode is increased. Does not change due to vibration or the like, and the antenna characteristics are stable.

In the antenna device of the present invention shown in FIG. 1 described above, the resonance frequency can be easily adjusted by adjusting the arrangement position of the dielectric base material 22 with respect to the radiation electrode 14. This is because the area of contact between the radiation electrode 14 and the dielectric base material 22 is adjusted by adjusting the position of the dielectric base material 22 with respect to the radiation electrode 14, and the magnitude of the wavelength shortening effect of the dielectric base material 22 is large. However, since the size of the radiation electrode 14 is constant, a change in the resonance frequency occurs. That is, if the area where the radiation electrode 14 and the dielectric base material 22 are in contact with each other is increased, the wavelength shortening effect is increased and the resonance frequency is lowered. If the area where the radiation electrode 14 is in contact with the dielectric base material 22 is reduced, The wavelength shortening effect is reduced and the resonance frequency is increased. Therefore, such a function effect may cause the dielectric base material 22 to vary in the dielectric constant for each production lot, but the resonance frequency is adjusted in response to the change in the resonance frequency due to this. It is suitable for. First, as shown in FIG. 7A, the dielectric base material 22 is disposed with respect to the radiation electrode 14. Then, in such arrangement, the such was VSWR characteristic shown in FIG. 7 (c) with an impedance such shown in FIG. 7 (b). Here, in order to adjust the whole resonance frequency in the lower direction, as shown in FIG. 8A , four members of the dielectric base material 22 are arranged with respect to the radiation electrode 14, and the center of the radiation electrode 14 and the feeding terminal 16 The arrangement positions may be shifted so as to narrow toward each other in the direction passing through (vertical direction in FIG. 8 ). Then, the impedance as shown in FIG. 8 (b) varies clockwise, VSWR characteristic as shown in FIG. 8 (c) varies a lower frequency direction as a whole. Further, in order to adjust the overall resonance frequency in the higher direction, as shown in FIG. 9A , the four members of the dielectric base material 22 with respect to the radiation electrode 14, the center of the radiation electrode 14 and the feeding terminal 16 are connected. What is necessary is just to shift the arrangement | positioning position so that it may mutually expand outside in the passing direction (vertical direction in FIG. 9 ). Then, as shown in FIG. 9B, the impedance fluctuates counterclockwise, and as shown in FIG. 9C, the VSWR characteristic fluctuates in the high frequency direction as a whole. Furthermore, as another method of adjusting the whole resonance frequency in a low direction, as shown in FIG. 10A , four members of the dielectric base material 22 are fed from the center of the radiation electrode 14 to the radiation electrode 14. The arrangement positions may be shifted so as to narrow toward each other in the direction orthogonal to the direction in which the terminals 16 are provided (lateral direction in FIG. 10 ). Then, as shown in FIG. 10B, the impedance fluctuates counterclockwise, and as shown in FIG. 10C, the VSWR characteristic fluctuates in the lower frequency direction as a whole. Further, as another method for adjusting the entire resonance frequency in the high direction, as shown in FIG. 11A , four members of the dielectric base material 22 are fed from the center of the radiation electrode 14 to the radiation electrode 14. What is necessary is just to shift the arrangement | positioning position so that it may spread outside each other and may be expanded in the direction orthogonal to the direction in which the terminal 16 was provided (horizontal direction in FIG. 11 ). Then, the impedance as shown in FIG. 11 (b) varies clockwise, VSWR characteristic as shown in FIG. 11 (c) varies to a higher frequency direction as a whole. The adjustment method shown in FIGS . 8 and 9 and the adjustment method shown in FIGS. 10 and 11 are different in the direction of impedance variation accompanying the variation of the resonance frequency, and any one of the adjustment methods depending on the desired impedance. Can be selected.

Further, in order to adjust the overall resonance frequency in the lower direction, as shown in FIG. 12A , all four substantially L-shaped members of the dielectric base material 22 are diagonally aligned with respect to the radiation electrode 14. You may arrange | position by narrowing inside and shifting. Then, as shown in FIG. 12B, the impedance does not change greatly, and as shown in FIG. 12C, the VSWR characteristic changes in the lower frequency direction as a whole. In order to adjust the overall resonance frequency in the high direction, as shown in FIG. 13A , all of the four substantially L-shaped members of the dielectric substrate 22 with respect to the radiation electrode 14 are placed diagonally outward. You may arrange | position by expanding and shifting. Then, as shown in FIG. 13B, the impedance does not change greatly, and as shown in FIG. 13C, the VSWR characteristic changes in the high frequency direction as a whole. The adjustment methods shown in FIGS . 12 and 13 are suitable for adjusting the entire resonance frequency without fluctuations in impedance.

Furthermore, if the two resonance frequencies of the radiation electrode 14 can be adjusted one by one, it is more preferable to obtain desired antenna characteristics. Therefore, a method for adjusting the high resonance frequency of one of the two resonance frequencies will be described below. First, as shown in FIG. 14 (a), one of the dielectric substrates 22 at one corner, which is a short diagonal line d1, is placed outward from the center of the radiation electrode 14 in the direction opposite to the direction in which the feeding terminal 16 is provided (see FIG. 14 , the arrangement position is shifted toward the upper side in the vertical direction. Then, as shown in FIG. 14D, the high resonance frequency shifts in the higher direction in the VSWR characteristic as shown in FIG. 14D, as in the VSWR characteristic shown in FIG . Further, if one arrangement position of the dielectric substrate 22 is shifted further outward, the high resonance frequency is shifted in the higher direction as in the VSWR characteristic shown in FIG . Little variation in the resonant frequency is observed. Accordingly, as shown in FIG. 14G, the fluctuation of the high resonance frequency fluctuates higher as one arrangement position of the dielectric substrate 22 at one corner that becomes the short diagonal line d1 is shifted outward. Here, one of the dielectric substrates 22 at one corner, which is a short diagonal line d1, is placed inward from the center of the radiation electrode 14 in the direction opposite to the direction in which the power supply terminal 16 is provided (lower side in the vertical direction in FIG. 14 ). When the arrangement position is shifted toward, the resonance frequency shifts in a slightly lower direction as shown in the VSWR characteristic shown in FIG . Moreover, the high resonance frequency and the low resonance frequency cannot be distinguished. Furthermore, if one arrangement position of the dielectric substrate 22 is shifted more inward, the resonance frequency is shifted in a lower direction as in the VSWR characteristic shown in FIG . In FIG. 14G, fH represents a high resonance frequency, fL represents a low resonance frequency, and f0 represents an average resonance frequency. Further, as shown in FIG. 15A, one of the dielectric substrates 22 at one corner, which is a short diagonal line d1, is placed outside (in the direction perpendicular to the direction in which the feed terminal 16 is provided from the center of the radiation electrode 14). In FIG. 15 , the arrangement position is shifted toward the right side in the horizontal direction. Then, as shown in FIG. 15D, the VSWR characteristic shown in FIG. 15D has a higher resonance frequency shifted in the higher direction as shown in FIG. If it is greatly shifted, as shown in FIG. 15 (f), the high resonance frequency shifts further in the higher direction. Then, as shown in FIG. 15G, the fluctuation of the high resonance frequency fluctuates higher as one arrangement position of the dielectric substrate 22 at one corner that becomes the short diagonal line d1 is shifted outward. Here, one of the dielectric substrates 22 at one corner, which is a short diagonal line d1, is placed inward in the direction orthogonal to the direction in which the feeding terminal 16 is provided from the center of the radiation electrode 14 (laterally left side in FIG. 15 ). When the arrangement position is shifted toward, the resonance frequency is shifted slightly lower as shown in the VSWR characteristic shown in FIG . Moreover, the high resonance frequency and the low resonance frequency cannot be distinguished. Furthermore, if one arrangement position of the dielectric substrate 22 is shifted more inward, the resonance frequency is shifted in a lower direction as in the VSWR characteristic shown in FIG . In FIG. 15G, fH indicates a high resonance frequency, fL indicates a low resonance frequency, and f0 indicates an average resonance frequency. Further, as shown in FIG. 16 (a), one of the dielectric substrates 22 at one corner that becomes the short diagonal line d1 is disposed in the diagonal direction toward the outside (slant upper right side in FIG. 16 ). Shift. Then, more ones of VSWR characteristics such shown in FIG. 16 (d) is, as the VSWR characteristic shown in FIG. 16 (e), the deviation in the higher direction is high resonant frequencies, one arrangement position of the dielectric substrate 22 If it is greatly shifted, as shown in FIG. 16 (f), the high resonance frequency is shifted in a higher direction. As shown in FIG. 16 (f), the fluctuation of the high resonance frequency is such that one arrangement position of the dielectric substrate 22 at one corner that becomes the short diagonal line d1 is shifted outward in the direction of the short diagonal line d1. Fluctuate higher. Here, when one of the dielectric substrates 22 at one corner that becomes the short diagonal line d1 is shifted in the diagonal direction toward the inner side (diagonally lower left side in FIG. 16 ), the arrangement position in FIG. As shown in VSWR characteristics, the resonance frequency is shifted slightly lower. Moreover, the high resonance frequency and the low resonance frequency cannot be distinguished. Furthermore, if one arrangement position of the dielectric substrate 22 is shifted to the lower left side more largely, the resonance frequency is shifted in a lower direction as shown in the VSWR characteristic shown in FIG . In FIG. 16G, fH represents a high resonance frequency, fL represents a low resonance frequency, and f0 represents an average resonance frequency. As a method of adjusting one of the two resonance frequencies, the method shown in FIGS . 14 , 15 , and 16 is arranged as one arrangement of the dielectric substrate 22 at one corner that becomes a short diagonal line d1. Although the positions are shifted, the two arrangement positions of the dielectric substrate 22 at the two corners that are the short diagonal line d1 may be shifted so as to be both point-symmetric.

Further, a method for adjusting the other low resonance frequency of the two resonance frequencies will be described below. First, as shown in FIG. 17 (a), one of the dielectric substrates 22 at one corner, which is a long diagonal line d2, is placed inward from the center of the radiation electrode 14 in the direction opposite to the direction in which the feed terminal 16 is provided (see FIG. 17 , the arrangement position is shifted toward the lower side in the vertical direction. Then, as shown in FIG. 17D, the VSWR characteristic as shown in FIG. 17D shifts the low resonance frequency in the lower direction as the VSWR characteristic shown in FIG . Furthermore, if one arrangement position of the dielectric substrate 22 is shifted to the lower side in the vertical direction, the low resonance frequency is shifted in the lower direction as in the VSWR characteristic shown in FIG . Almost no fluctuation of the high resonance frequency is observed. Then, as shown in FIG. 17 (g), the fluctuation of the low resonance frequency decreases in the lower direction as one arrangement position of the dielectric substrate 22 at one corner which becomes the long diagonal line d2 is shifted downward in the vertical direction. fluctuate. Here, one of the dielectric substrates 22 at one corner that becomes the long diagonal line d2 is placed outward (upward in the vertical direction in FIG. 17 ) from the center of the radiation electrode 14 in the direction opposite to the direction in which the feeding terminal 16 is provided . When the arrangement position is shifted, the resonance frequency is shifted slightly higher as shown in the VSWR characteristic shown in FIG . Moreover, the high resonance frequency and the low resonance frequency cannot be distinguished. Furthermore, if one arrangement position of the dielectric substrate 22 is largely shifted upward in the vertical direction, the resonance frequency is shifted in a higher direction as in the VSWR characteristic shown in FIG . In FIG. 17G, fH indicates a high resonance frequency, fL indicates a low resonance frequency, and f0 indicates an average resonance frequency. Further, as shown in FIG. 18A , one of the dielectric substrates 22 at one corner, which is a long diagonal line d2, is placed on the inside (in the direction orthogonal to the direction in which the feeding terminal 16 is provided from the center of the radiation electrode 14). In FIG. 18 , the arrangement position is shifted toward the right side in the horizontal direction. Then, as shown in FIG. 18D, the VSWR characteristic as shown in FIG. 18D shifts the lower resonance frequency in a lower direction as in the VSWR characteristic shown in FIG. If it is greatly shifted to the right in the lateral direction, the low resonance frequency is shifted further downward as shown in FIG . Then, as shown in FIG. 18G, the fluctuation of the low resonance frequency fluctuates in the lower direction as the position of one of the dielectric substrates 22 at one corner that becomes the long diagonal line d2 is shifted to the right in the horizontal direction. To do. Here, one of the dielectric substrates 22 at one corner that becomes the long diagonal line d2 is placed outward (in the horizontal direction in FIG. 18 ) from the center of the radiation electrode 14 in the direction opposite to the direction in which the power supply terminal 16 is provided . When the arrangement position is shifted, the resonance frequency is shifted slightly higher as shown in the VSWR characteristic shown in FIG . Moreover, the high resonance frequency and the low resonance frequency cannot be distinguished. Furthermore, if one arrangement position of the dielectric substrate 22 is greatly shifted to the left in the lateral direction, the resonance frequency is shifted in a higher direction as in the VSWR characteristic shown in FIG . In FIG. 18G, fH represents a high resonance frequency, fL represents a low resonance frequency, and f0 represents an average resonance frequency. Further, as shown in FIG. 19 (a), one of the dielectric substrates 22 at one corner of the long diagonal line d2 is disposed inwardly (in the diagonally lower right side in FIG. 19 ) in the direction of the long diagonal line d2 . Shift the position. Then, more ones of VSWR characteristics such shown in FIG. 19 (d) is, as the VSWR characteristic shown in FIG. 19 (c), shift to a lower direction is low resonance frequencies, one arrangement position of the dielectric substrate 22 If it is greatly shifted to the lower right side, as shown in FIG. 19B , the low resonance frequency shifts further in the lower direction. Then, as shown in FIG. 19 (g), the fluctuation of the low resonance frequency is caused by the fact that one arrangement position of the dielectric substrate 22 at one corner that becomes the long diagonal line d2 is inclined diagonally to the inside in the direction of the long diagonal line d2. The lower the value, the lower the value. Here, when one of the dielectric substrates 22 at one corner which becomes the long diagonal line d2 is shifted in the direction of the diagonal line toward the outside (slant left upper side in FIG. 19 ), the arrangement position of FIG. As shown in VSWR characteristics, the resonance frequency is shifted slightly higher. Moreover, the high resonance frequency and the low resonance frequency cannot be distinguished. Furthermore, if one arrangement position of the dielectric substrate 22 is shifted to the upper left side more largely, the resonance frequency is shifted in a higher direction as in the VSWR characteristic shown in FIG . In FIG. 19G, fH represents a high resonance frequency, fL represents a low resonance frequency, and f0 represents an average resonance frequency. As a method for adjusting one of the two resonance frequencies, the method shown in FIGS . 17 , 18 and 19 is arranged in one arrangement of the dielectric substrate 22 at one corner which becomes the long diagonal line d2. Although the positions are shifted, the two arrangement positions of the dielectric substrate 22 at the two corners which are the long diagonal line d2 may be shifted so as to be both point-symmetric.

It is a disassembled perspective view of 1st Example of the antenna apparatus of this invention. It is a figure which shows the gain of the antenna apparatus of this invention shown in FIG. In order to compare, it is a figure which shows the gain of the conventional antenna apparatus. It is a perspective view of the structure which provided the triangular part inside four corners by the other dielectric base material which can be used for the antenna apparatus of this invention in four substantially L shape. It is a perspective view of the structure made into four substantially triangular shapes with the other dielectric material base material which can be used for the antenna apparatus of this invention. It is a diagram showing the structure of the radiation electrode provided with a feeding terminal shifted from the central position to one side, (a) shows a shape in which two corners of one diagonal is slightly cut off in a chamfered shape, (B) shows a shape in which one corner of one diagonal line is slightly cut off in a chamfered shape. The state before adjustment of the base in the case of adjusting the whole resonance frequency is shown, (a) shows the arrangement position of the dielectric substrate with respect to the radiation electrode, (b) shows the impedance, and (c) shows the VSWR characteristics. Indicates. It is explanatory drawing of the method of adjusting the whole resonant frequency to the low direction, (a) orient | assigns all four members of a dielectric base material to the direction in which the feed terminal was provided from the center of the radiation electrode with respect to the radiation electrode. (B) shows the impedance, and (c) shows the VSWR characteristics. It is explanatory drawing of the method of adjusting the whole resonance frequency to a high direction, (a) is opposite to the direction where the feed terminal was provided from the center of the radiation electrode for all four members of the dielectric substrate with respect to the radiation electrode. The arrangement position is shifted toward the direction, (b) shows the impedance, and (c) shows the VSWR characteristic. It is explanatory drawing of another method which adjusts the whole resonant frequency to a low direction, (a) is the direction where all four members of the dielectric base material were provided with respect to the radiation electrode, and the feed terminal was provided from the center of the radiation electrode. It shows that the arrangement position is shifted toward the left side when viewed from above in the direction orthogonal to the graph, (b) shows the impedance, and (c) shows the VSWR characteristics. It is explanatory drawing of another method of adjusting the whole resonance frequency to a high direction, (a) is the direction where all four members of the dielectric base material were provided with respect to the radiation electrode, and the feed terminal was provided from the center of the radiation electrode. It shows that the arrangement position is shifted toward the right side when viewed from above in the direction orthogonal to the graph, (b) shows the impedance, and (c) shows the VSWR characteristics. It is explanatory drawing of another method of adjusting the whole resonant frequency to the low direction, (a) is arrange | positioning by shifting all four members of a dielectric base material, narrowing inward with respect to a radiation electrode. (B) shows the impedance, and (c) shows the VSWR characteristics. It is explanatory drawing of another method of adjusting the whole resonance frequency to a high direction, (a) is arrange | positioned by magnifying and shifting all four members of a dielectric base material outside with respect to a radiation electrode. (B) shows the impedance, and (c) shows the VSWR characteristics. It is explanatory drawing of the method of adjusting only the high resonant frequency of two resonant frequencies to a high direction, (a) is arrange | positioning one member of the dielectric base material of a diagonal line short with respect to a radiation electrode on the upper side of a radiation electrode. (B) shows the VSWR characteristics before shifting, (c) shows the VSWR characteristics with a slight shift, (d) shows the VSWR characteristics with a large shift, e) is a graph showing the change of the resonance frequency with respect to the shifted distance. It is explanatory drawing of another method of adjusting only the high resonant frequency of two resonant frequencies to a high direction, (a) is one member of the dielectric base material of a diagonal line short with respect to a radiation electrode. (B) shows the VSWR characteristics before shifting, (c) shows the VSWR characteristics with a slight shift, and (d) shows the VSWR characteristics with a large shift. (E) is a graph which shows the change of the resonant frequency with respect to the shifted distance. FIG. 9 is an explanatory diagram of still another method for adjusting only a high resonance frequency of two resonance frequencies in a high direction, in which (a) shows one member of a dielectric substrate having a short diagonal line with respect to the radiation electrode; (B) shows the VSWR characteristic before shifting, (c) shows the VSWR characteristic with a slight shift, and (d) shows a state with a large shift. VSWR characteristic is shown, (e) is a graph which shows the change of the resonant frequency with respect to the shifted distance. It is explanatory drawing of the method of adjusting only the low resonant frequency of two resonant frequencies to a low direction, (a) arrange | positions one member of the dielectric base material of a diagonal line short with respect to a radiation electrode above a radiation electrode. (B) shows the VSWR characteristics before shifting, (c) shows the VSWR characteristics with a slight shift, (d) shows the VSWR characteristics with a large shift, e) is a graph showing the change of the resonance frequency with respect to the shifted distance. It is explanatory drawing of another method of adjusting only the low resonant frequency of two resonant frequencies to a low direction, (a) is one member of the dielectric base material of a diagonal line short with respect to a radiation electrode, The side of a radiation electrode (B) shows the VSWR characteristics before shifting, (c) shows the VSWR characteristics with a slight shift, and (d) shows the VSWR characteristics with a large shift. (E) is a graph which shows the change of the resonant frequency with respect to the shifted distance. FIG. 9 is an explanatory view of still another method for adjusting only a low resonance frequency of two resonance frequencies in a low direction, in which (a) shows one member of a dielectric substrate having a short diagonal line with respect to the radiation electrode; (B) shows the VSWR characteristic before shifting, (c) shows the VSWR characteristic with a slight shift, and (d) shows a state with a large shift. VSWR characteristic is shown, (e) is a graph which shows the change of the resonant frequency with respect to the shifted distance. It is a disassembled perspective view of the conventional planar antenna device. It is a disassembled perspective view of another conventional planar antenna device.

DESCRIPTION OF SYMBOLS 10 Conductor base 12, 13, 22, 24, 26 Dielectric base material 14 Radiation electrode 16 Feed terminal

Claims (7)

In an antenna device in which a flat dielectric substrate is disposed on a conductor base as a GND electrode, and a radiation electrode is disposed on the top surface of the dielectric substrate, the radiation electrode is disposed at one corner or opposite two. When viewed from above , the four corners of the dielectric substrate are formed in a substantially rectangular shape with corners slightly cut off in a chamfered shape so that an empty space is provided in the center and the four corners of the radiation electrode are supported respectively. Divided into four, substantially L-shaped, and provided with a feed terminal shifted from the central position of the radiation electrode to one side so that the diagonal direction of the radiation electrode is the current excitation direction. A feature antenna device. 2. The antenna device according to claim 1 , wherein the arrangement positions of all of the four substantially L-shaped members of the dielectric base with respect to the radiation electrode are narrowed inward to adjust the resonance frequency to a lower side. A method for adjusting an antenna device, comprising: 2. The antenna device according to claim 1 , wherein all the arrangement positions of the four substantially L-shaped members of the dielectric base material are expanded outward with respect to the radiation electrode, and the resonance frequency is adjusted to be higher. A method for adjusting an antenna device, comprising: 2. The antenna device according to claim 1 , wherein one of the substantially L-shaped members of the dielectric base material that supports a corner having a long diagonal line where a corner of the radiation electrode is not cut off with respect to the radiation electrode; A method for adjusting an antenna device, wherein two arrangement positions are shifted inward or outward to adjust a low resonance frequency having the long diagonal direction as an excitation direction. 2. The antenna device according to claim 1 , wherein one or two of the substantially L-shaped members of the dielectric base material supporting a corner that is a short diagonal line in which the corner of the radiation electrode is cut off with respect to the radiation electrode. A method for adjusting an antenna device, characterized in that a high resonance frequency having the short diagonal direction as an excitation direction is adjusted by shifting one arrangement position inward or outward. 2. The antenna device according to claim 1 , wherein the four substantially L-shaped members of the dielectric base are disposed with respect to the radiation electrode in a direction passing through a center of the radiation electrode and the feeding terminal. The method for adjusting an antenna device is characterized in that the resonance frequency is adjusted by narrowing the antenna device so as to be narrowed or expanded outward. 2. The antenna device according to claim 1 , wherein the positions of the four substantially L-shaped members of the dielectric base material with respect to the radiation electrode are arranged in a direction passing through the center of the radiation electrode and the feeding terminal. A method of adjusting an antenna device, wherein the resonance frequency is adjusted by narrowing inward or expanding outward in an orthogonal direction.