JP5241688B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device, and more particularly to a vehicle-mounted power conversion device for an electric vehicle and a hybrid vehicle.

  An electric vehicle or a hybrid vehicle is equipped with a motor as a power source of the vehicle, and generally includes a power conversion device such as an inverter for controlling electric power supplied to the motor.

  The power conversion device includes a power module including a power semiconductor such as an IGBT, a drive circuit that drives the power module, a control circuit that controls them, and a capacitor for current smoothing. Since these electronic components are vulnerable to high temperatures, it is necessary to cool them. In particular, many power converters having a large capacity and a large calorific value are provided with a water-cooled cooler for circulating cooling water.

  Among the inverter parts, a power module cooling device that generates a large amount of heat is required to have a particularly high performance. Thus, a double-sided cooling module that cools the semiconductor element from both the front and back sides has been put into practical use. For example, Japanese Patent Laying-Open No. 2006-93293 discloses a cooler structure for a double-sided cooling module.

  However, even when the temperature of the cooling water is increased by a plurality of power modules, it is required to suppress the influence of the cooling performance deterioration.

JP 2006-93293 A

  The problem to be solved by the present invention is to suppress the influence of a decrease in cooling performance even when the temperature of the cooling water is increased by a plurality of power modules.

  In order to solve the above-described problems, a power conversion device according to the present invention includes a first semiconductor chip, a first conductor plate facing one main surface of the first semiconductor chip, and the other of the first semiconductor chip. A first semiconductor module having a second conductor plate facing the main surface; a second semiconductor chip; a third conductor plate facing one main surface of the second semiconductor chip; and A second conductor module having a fourth conductor plate facing the other main surface, the third conductor plate being disposed so as to face the second conductor of the first semiconductor module, and a refrigerant inlet portion. The first semiconductor module and the second semiconductor module sandwiching the refrigerant outlet portion disposed on the side where the refrigerant inlet portion is disposed and the first conductor plate of the first semiconductor module, 1 Semiconductor chip placement side A first flow path provided on the opposite side, a second flow path provided on the opposite side to the arrangement side of the first semiconductor chip across the second conductor plate of the first semiconductor module, and the first 2 sandwiching the third conductor plate of the semiconductor module, sandwiching the third flow path provided on the side opposite to the arrangement side of the second semiconductor chip, sandwiching the fourth conductor plate of the second semiconductor module, A fourth flow path provided on the side opposite to the arrangement side of the second semiconductor chip, a first intermediate flow path for connecting the refrigerant inlet portion and the first flow path, the refrigerant outlet portion, and the A second intermediate flow path for connecting to the second flow path, a third intermediate flow path for connecting to the refrigerant inlet portion and the third flow path, and a connection to the refrigerant outlet portion and the fourth flow path. A fourth intermediate flow path, and a flow direction of the refrigerant flowing in the first flow path and flowing in the second flow path The first flow path and the second flow path are provided such that the flow direction of the refrigerant is opposite, and the flow direction of the refrigerant flowing through the third flow path and the flow direction of the refrigerant flowing through the fourth flow path are The third flow path and the fourth flow path are provided so as to be opposite, and the refrigerant inlet part and the refrigerant outlet part are arranged at different positions with respect to the height direction of the first flow path, In the second intermediate flow path and the third intermediate flow path, the projection part of the first intermediate flow path projected from the height direction of the first flow path intersects the projection part of the third intermediate flow path. Formed.

  According to the present invention, the overall cooling performance can be improved by dispersing the influence of the cooling performance decrease due to the temperature rise of the cooling water to the plurality of modules.

It is the figure which showed the example of the circuit block structure of the power converter device which concerns on embodiment of this invention. It is the figure which showed the example of the external appearance perspective view of the power converter device which concerns on embodiment of this invention. It is the figure which showed the example of the internal structure of the power converter device housing | casing which concerns on embodiment of this invention. It is the figure which showed the example of the internal structure of the semiconductor module which concerns on embodiment of this invention. It is the figure which showed the positional relationship of the flow path structure and semiconductor module which reciprocate especially in 3 branches among FIG. It is the figure which showed the positional relationship of the flow-path structure reciprocated by 3 branches in the case of one inverter apparatus, and a semiconductor module. It is the figure which showed the positional relationship of the flow path structure where all the 3 branched flow paths merge in a turn part, and a semiconductor module. FIG. 5 is a perspective view showing the positional relationship between a semiconductor module and a flow path structure in which a flow path near an inlet hole intersects with a flow path near an outlet hole in a vertical direction and reciprocates in three branches. It is sectional drawing which passes along the centerline of the cooling water exit hole 12 of FIG. It is sectional drawing which passes along the centerline of the cooling water inlet hole 11 of FIG. FIG. 9 is a flowchart schematically showing the flow direction around each module in FIG. 8. It is the perspective view which showed the positional relationship of the flow-path structure where each phase semiconductor module is arranged toward upstream from downstream, and reciprocates by 2 branches, and a semiconductor module. It is sectional drawing which passes along the centerline of the cooling water inlet hole 11 of FIG. FIG. 13 is a flowchart schematically showing the flow direction around each module in FIG. 12. It is the figure which showed the effect of being able to cancel the influence of water temperature rise with the opposite flow. It is the perspective view which showed the positional relationship of the flow-path structure which supplies a liquid to two heat radiating surfaces near the center of a housing | casing from a flow path near an inlet hole, and reciprocates by two branches, and a semiconductor module. It is sectional drawing which passes along the centerline of the cooling water inlet hole 11 of FIG. FIG. 17 is a flowchart schematically showing the flow direction around each module in FIG. 16. The V-phase semiconductor module has a heat dissipation surface in a direction perpendicular to the U-phase semiconductor module and the W-phase semiconductor module, and shows a flow path structure that reciprocates in two branches so as to generate an alternating current on the heat dissipation surface. Perspective view. Sectional drawing which passes along the centerline of the cooling water inlet hole 11 of FIG. FIG. 20 is a flowchart schematically showing the flow direction around each module in FIG. 19.

  Before describing the specific configuration of the present embodiment, the principle and problems of the present embodiment will be described.

  In the cooler of a power converter, distribution of cooling water to a plurality of power modules becomes a problem. In the flow path configuration as described in Patent Document 1, there is a difference in flow rate between the flow path on the near side near the inlet / outlet of the cooling water and the flow path on the far side from the inlet / outlet, and the flow path on the near side. The flow rate is large and the cooling performance tends to be high.

  In the power conversion device described in Patent Document 1, by utilizing this uneven cooling performance, a module with a large amount of heat generation is arranged in a portion with a high cooling performance, and a module with a small amount of heat generation is disposed in a portion with a low cooling performance. doing. According to this configuration, the temperature between modules can be made uniform.

  However, the amount of heat generated by each module mounted on the power converter does not necessarily have a difference in the amount of heat generated that cancels the difference in cooling capacity. In addition, since the amount of heat generated by each module depends on the running state of the vehicle, a module that generates a large amount of heat and a module that generates a small amount of heat are not always determined. However, it is possible that the heat generation amount of the back module is large in another state.

  Therefore, when the heat generation amount of each module is approximately equal, or when the magnitude relationship of the heat generation amount changes depending on the situation, a cooling water flow path structure that can distribute the cooling water evenly to all the modules is desirable.

  For example, a structure in which a flow rate adjusting valve or the like is provided at a branch portion of the flow path in order to make the flow rate distribution uniform can be considered. However, since the valve has a large pressure loss, there is a demerit that the power for feeding cooling water to the inverter is increased. In addition, when the number of branches of the flow path is large, even if a valve is used, it is difficult to branch evenly.

  Next, in the cooling water channel structure of Patent Document 1, since the number of branches of the flow path is very large, the flow rate of the cooling water flowing into each flow path is small. Since the cooling capacity of the cooling fins depends on the flow rate of the cooling water, there is a problem that the number of branches increases, the flow rate decreases, and the cooling capacity decreases.

  On the other hand, when trying to configure a cooler by meandering one flow path without branching at all, all the pressure losses due to the coolers of the respective modules are added, resulting in a very large pressure loss in the entire inverter. Result. Therefore, it is necessary to select an optimal value for the number of branches of the flow path in consideration of the balance between the cooling capacity and the pressure loss.

  Further, in the water cooling structure, since the cooling water receives the heat released from the power module, the temperature rises and the cooling performance of the downstream power module deteriorates. In particular, when the flow rate of cooling water in contact with each power module is small as in Patent Document 1, the amount of water temperature rise tends to increase.

  Furthermore, the cooling water channel structure of Patent Document 1 employs a structure in which the cooling water inlet / outlet flow channels and the power module cooling flow channels intersect perpendicularly, and the flow is perpendicular to the flow path branching portion. Large pressure loss due to bending.

  The present embodiment has been made in view of the above problems, and its purpose is to distribute the cooling water approximately equally to the plurality of double-sided cooling power modules and to keep the pressure loss of the entire cooling water channel small. It is.

  Another object of the present embodiment is to provide a flow path structure that can select the optimal number of branches of the cooling flow path according to the cooling performance required for the inverter device and the limit value of the pressure loss of the cooling water. is there.

  Another object of the present embodiment is to make the cooling capacity uniform by avoiding the influence of the temperature rise of the cooling water from concentrating on the downstream power module.

  Still another object of the present embodiment is to provide a flow path branching structure with low pressure loss.

  Hereinafter, a specific configuration of the present embodiment will be described in detail with reference to the drawings.

  FIG. 1 is a diagram illustrating an example of a circuit block configuration of a power conversion device according to an embodiment of the present invention. As shown in FIG. 1, power conversion device 100 is connected to battery 200 and motor generator 300, converts a DC current supplied from battery 200 into a three-phase AC current, and supplies it to motor generator 300. Device.

  The power conversion apparatus 100 includes a capacitor integrated module 110 for stabilizing and smoothing a direct current supplied from the battery 200 and an inverter device 120 for generating a three-phase alternating current from the direct current. The Moreover, the inverter apparatus 120 is comprised including the upper-lower arm series circuit 121 which comprises three phases of U phase V phase W phase, and the control module 130 which controls it.

  In the embodiment shown in FIG. 1, a case where there is one inverter device 120 will be described as an example. However, as will be described later with reference to FIG. It is possible to cope with an increase in the amount of electric power to be converted and a plurality of motor generators 300.

  In the inverter device 120, each of the upper and lower arm series circuits 121 is configured by arranging two current switch circuits including a parallel connection circuit of an IGBT 125 and a diode 126 in series. The upper and lower ends of the upper and lower arm series circuit 121 are connected to the positive electrode and the negative electrode of the battery 200 via the DC connector 140, respectively. The current switch circuit composed of the IGBT 125 and the diode 126 disposed on the upper side (positive side) operates as a so-called upper arm, and the current composed of the IGBT 125 and the diode 126 disposed on the lower side (negative side). The switch circuit operates as a so-called lower arm.

  In the inverter device 120, three-phase alternating currents u, v, and w are output from the midpoint position of each of the upper and lower arm series circuits 121, that is, the connecting portion of the upper and lower current switch circuits, and the output three-phase Are supplied to the motor generator 300 through the AC connector 160.

  The control module 130 includes a driver circuit 131 that drives and controls the three sets of upper and lower arm series circuits 121, and a control circuit 132 that supplies a control signal to the driver circuit 131. Here, the signal output from the driver circuit 131 is supplied to each of the IGBTs 125 of the upper arm and the lower arm of the power module 122, controls the switching operation thereof, and the alternating current u output from each of the upper and lower arm series circuits 121. , V, w are controlled in amplitude and phase.

  The control circuit 132 includes a microcomputer for calculating the switching timing of each IGBT 125 in the three sets of upper and lower arm series circuits 121. The microcomputer includes, as input information, a target torque value required for the motor generator 300, a current value supplied from the upper and lower arm series circuit 121 to the motor generator 300, a magnetic pole position of the rotor of the motor generator 300, and the like. Entered.

  Among these pieces of input information, the target torque value is based on a command signal output from a host controller (not shown). The current value is based on the detection signal of the current sensor 150 that detects the current value of the alternating current output from each upper and lower arm series circuit 121. The magnetic pole position is based on a detection signal from a rotating magnetic pole sensor (not shown) provided in the motor generator 300.

  In addition, the control module 130 has a function of detecting an abnormality such as overcurrent, overvoltage, and overtemperature, and protects the upper and lower arm series circuit 121. Incidentally, the emitter electrode of the IGBT 125 of each arm is connected to the driver circuit 131, and the driver circuit 131 performs overcurrent detection in the emitter electrode for each IGBT 125, and the switching operation is performed for the IGBT 125 in which the overcurrent is detected. To protect against overcurrent.

  The control circuit 132 receives signals from a temperature sensor (not shown) provided in the upper and lower arm series circuit 121, a detection circuit that detects a DC voltage applied to both ends of the upper and lower arm series circuit 121, and the like. Detect abnormalities such as over-temperature and over-voltage based on this signal. And when abnormality, such as overtemperature and overvoltage, is detected, all IGBT125 switching operation | movements are stopped and the power module 122 whole is protected from abnormality, such as overtemperature and overvoltage.

  In the power conversion device 100 described above, the current switch circuit including the IGBT 125 and the diode 126 may be configured using a MOSFET (metal oxide semiconductor field effect transistor). The three sets of upper and lower arm series circuits 121 may be configured to include two upper and lower arm series circuits, and may output a two-phase alternating current. Furthermore, the power conversion device 100 may be a device that converts a three-phase (two-phase) alternating current into a direct current, which is configured almost in the same manner as the circuit configuration of FIG.

  As will be described in detail later, the semiconductor module 1 according to the present embodiment uses a 2-in-1 type configured corresponding to the upper and lower arm series circuit 121 of each phase. However, the positional relationship between the cooling water channel 21 and the semiconductor module 1 shown in the present embodiment is a 1 in 1 type semiconductor module (a configuration in which each arm divided into an upper arm and a lower arm is a unit) or a 6 in 1 type semiconductor module. Even (a configuration in which upper and lower arms for three phases are combined) does not change.

  FIG. 2 is a diagram illustrating an example of an external perspective view of the power conversion device according to the present embodiment. As shown in FIG. 2, the power conversion device 100 includes an upper lid 10 and a housing 20. Although details will be described later, in the power conversion device 100 of the present embodiment, two inverter devices 120 are housed inside the housing 20.

  In the case of this embodiment, two inverter devices 120 are housed inside the housing 20. A control module 130 and the like are housed in the upper part of the housing 20, and a capacitor integrated module 110 is housed in the lower part of the housing 20. A plurality of semiconductor modules constituting 121 are mounted. The semiconductor module and the capacitor integrated module 110 constituting the upper and lower arm series circuit 121 are inserted into the cooling water passage 21 to be described later and cooled.

  A cooling water inlet hole 11 for supplying cooling water to the cooling water flow path and a cooling water outlet hole for discharging the cooling water warmed by each heat generating part from the cooling water flow path are provided on one side wall of the housing 20. 12 are provided. In addition, a control signal connector 30 that holds a signal line for the control module 130 to transmit and receive signals to and from an external device such as a host system is provided on the side wall provided with the cooling water inlet hole 11.

  Further, a lateral lid 2 b for projecting two AC connectors 160 (not shown) corresponding to the two inverter devices 120 is provided on the other side wall of the housing 20.

  FIG. 3 is an exploded perspective view showing an example of the internal structure of the housing 20 of the power conversion apparatus 100 according to the present embodiment.

  In the housing 20, six 2 in 1 type semiconductor modules 1 configured corresponding to the upper and lower arm series circuits 121 of each phase are mounted, so that two inverter devices 120 can be driven.

  A cooling water channel 21 formed by die casting or the like is provided inside the housing 20 on the lower side of the housing 20. A control circuit board 50 and a driver circuit board 40 are disposed on the upper side of the housing 20.

  The cooling flow path 21 forms a storage space for the semiconductor module 1 having an opening formed on the side where the control circuit board 50 and the driver circuit board 40 are provided. In addition, the cooling flow path 21 forms a capacitor storage space having an opening formed on the side where the control circuit board 50 and the driver circuit board 40 are provided, similarly to the storage space of the semiconductor module 1.

  Each semiconductor module 1 is stored in a storage space of the semiconductor module 1. In the capacitor integrated module 110, the capacitor cell 111 is also stored in the capacitor storage space.

  The DC connector 140 is provided on the side wall opposite to the side wall in which the cooling inlet hole 11 is formed, and is insulated and protected by the horizontal lid 2a. The AC connector 160 is insulated and protected by the horizontal lid 2b.

  The capacitor integrated module 110 includes a capacitor cell 111, a PN bus bar 112, and a capacitor case 113 in the direction from the cooling water channel 21 to the driver circuit board 40.

  The capacitor cell 111 has a structure in which a film-like conductor is wound, and is disposed so that the outer peripheral surface of the capacitor cell 111 faces the flat portion of the PN bus bar 112.

  The PN bus bar 112 has a laminated structure constituted by a positive electrode conductor plate and a negative electrode conductor plate, and an insulating material sandwiched between the positive electrode conductor plate and the negative electrode conductor plate. The PN bus bar 112 is configured to be wide so as to cover the plurality of capacitor cells 111. Further, the PN bus bar 112 forms six holes 144 through which the terminals of the six semiconductor modules 1 are passed. A DC terminal 142 is provided on the side of the PN bus bar 112 close to the DC connector 140.

  The capacitor case 113 is a case for housing the capacitor cell 111 and the PN bus bar 112. In addition, when the capacitor case 113 is fixed to the housing 20 with screws through the plurality of screw fitting portions 14, the capacitor case 113 presses the flange of each semiconductor module 1 against the housing 20. Thereby, it can suppress that a refrigerant | coolant leaks from the cooling flow path 21. FIG. Further, by using the case for storing the cell as a pressing member for sealing, a highly reliable and small power converter can be realized.

  The AC bus bar 114 is disposed above the capacitor case 113 and wired from each semiconductor module 1 to the AC connector 160. The current sensor 150 is attached to the AC connector 160 and detects the current value of the AC current output from each semiconductor module 1.

  This embodiment employs a slot-in structure in which the semiconductor module 1 and the capacitor integrated module 110 are inserted into the cooling water channel 21 from above, and as a result, the assemblability is improved.

  FIG. 4 is an exploded view showing an example of the internal structure of the 2-in-1 type semiconductor module 1 according to the present embodiment. In the semiconductor module 1, a positive-side conductor plate 402a and upper and lower arm connecting conductor plates 402d are arranged on one surface side of a power semiconductor element (in this embodiment, an IGBT 125 and a diode 126), and on the other surface side of the power semiconductor element. The upper and lower arm series circuit 121 of FIG. 1 is configured by arranging the negative electrode side conductor plate 402b and the AC side conductor plate 402c.

  The upper and lower arm series circuit 121 configured as described above is inserted into a cylindrical case 405. The case 405 has an opening 406 for projecting the signal terminals 403a to 403d and the main current terminal to the outside of the case 405 on one surface. Further, the case 405 has pin fins formed on both surfaces parallel to the main surface of the power semiconductor element. In this embodiment, pin fins are particularly provided, but flat fins may be used.

  An insulating sheet 401 is provided between the inner wall of the case 405 and the positive conductor plate 402a, the upper and lower arm connecting conductor plates 402d, the negative conductor plate 402b, and the AC conductor plate 402c. The case 405 is filled with mold resin.

  In this embodiment, an example is shown in which two IGBTs 125 and two diodes 126 are arranged in parallel in the upper arm and the lower arm, respectively, and there is an advantage that the thermal resistance can be reduced by paralleling the elements. However, the parallel number may be changed according to the inverter required output and the element cost.

  On the surface where the negative electrode side conductor plate 402b and the AC side conductor plate 402c are joined to the power semiconductor element, an emitter side protrusion 404a is provided at a position corresponding to the IGBT 125, and an anode side protrusion 404b is provided at a position corresponding to the diode 126. ing. As a result, even if the flatness of the conductor plate is not completely zero, it is possible to generate stress necessary for sandwiching both surfaces of the power semiconductor element (in this embodiment, the IGBT 125 and the diode 126), and at the protrusions. It becomes possible to diffuse heat and has an effect of reducing thermal resistance.

  Also, the upper and lower arm connecting projections 408 are located between the AC side conductor plate 402c and the upper and lower arm connecting conductor plate 402d, and they are soldered together. The signal terminals 403a / 403b receive the drive signal output from the driver circuit board 40 and control each IGBT chip 125. Further, the signal terminals 403c / 403d input the current output from each IGBT 125 to the control circuit board 50, detect the overcurrent, and stop the switching operation of the corresponding IGBT when the overcurrent is detected. And protect the corresponding IGBT from overcurrent.

  An upper arm signal terminal 403a for controlling the upper arm IGBT chip 125a, an upper arm signal terminal 403c for receiving a signal output from the upper arm IGBT chip 125a, and a lower arm IGBT chip 125b are provided. The lower arm signal terminal 403b for control and the upper arm signal terminal 403d that receives signals output from the lower arm IGBT chip 125b are all fixed to one conductor plate 402. This facilitates the wire bonding connection process for connecting the terminal 403 and the terminal 403, leading to improvement in productivity and connection reliability.

  FIG. 5 shows the cooling water passage 21, the cooling water inlet hole 11, and the cooling water outlet that are formed when the semiconductor module 1 and the capacitor integrated module 110 are inserted into the casing 20 in the power conversion device 100 described in FIG. 3. FIG. 6 is a diagram showing a positional relationship of holes 12.

  As shown in FIG. 3, the capacitor case 113 is provided with capacitor cell storage portions 113 a to 113 c for storing the capacitor cell 111. Further, as shown in FIG. 5, two semiconductor modules 1a constituting the U phase are disposed between the capacitor cell storage portion 113a and the capacitor cell storage portion 113b. The two semiconductor modules 1a are arranged side by side along the longitudinal direction of the capacitor cell storage portion 113a and the capacitor cell storage portion 113b.

  In addition, two semiconductor modules 1b constituting the V phase are arranged between the capacitor cell storage portion 113b and the capacitor cell storage portion 113c. The two semiconductor modules 1b are arranged side by side along the longitudinal direction of the capacitor cell storage portion 113b and the capacitor cell storage portion 113c.

  In addition, two semiconductor modules 1c constituting the W phase are disposed between the capacitor cell storage portion 113c and the side wall of the housing 20. The two semiconductor modules 1c are arranged side by side along the longitudinal direction of the capacitor cell storage portion 113b.

  The first U-phase module side flow path 23a is formed between the heat dissipation surface of the semiconductor module 1a and the capacitor cell storage portion 113a. The second U-phase module side flow path 23b is formed between the heat radiation surface of the semiconductor module 1a and the capacitor cell storage portion 113b. The first V-phase module side flow path 23c is formed between the heat radiation surface of the semiconductor module 1b and the capacitor cell storage portion 113b. The second V-phase module side flow path 23d is formed between the heat radiation surface of the semiconductor module 1b and the capacitor cell storage portion 113c. The first W-phase module side flow path 23e is formed between the heat dissipation surface of the semiconductor module 1c and the capacitor cell storage portion 113c. The second W-phase module-side flow path 23f is formed between the heat radiation surface of the semiconductor module 1c and the inner wall of the housing 20.

  Next, how the cooling water supplied from the cooling water inlet hole 11 is distributed to each module side surface flow path 23 and how it is discharged to the cooling water outlet hole 12 will be described. First, the cooling water supplied from the cooling water inlet hole 11 is branched into three at the inlet-side flow paths 22a to 22c. The first inlet side channel 22 a is connected to the first U-phase module side channel 23 a and the cooling water inlet hole 11. The second inlet side channel 22 b is connected to the second U-phase module side channel 23 b and the cooling water inlet hole 11. The third inlet side channel 22 c is connected to the first V-phase module side channel 23 c and the cooling water inlet hole 11.

  On the surface of the housing 20 opposite to the surface where the cooling water inlet hole 11 and the cooling water outlet hole 12 are present, U-turn portion flow paths 24a to 24f are provided. The 1st U turn part channel 24a is connected with the 1st U phase module side channel 23a. The second U-turn channel 24b is connected to the first U-phase module side channel 23b. The first U-turn part flow path 24 a and the second U-turn part flow path 24 b are coupled at the junction 29, and are configured such that the refrigerant mixes at the junction 29. Further, a fifth U-turn channel 24e and a sixth U-turn channel 24f connected to the junction 29 are provided, and the channels are branched again in the fifth U-turn channel 24e and the sixth U-turn channel 24f. The fifth U-turn portion flow path 24e is connected to the first W-phase module side flow path 23e. The sixth U-turn portion channel 24f is connected to the second W-phase module side channel 23f.

  On the other hand, the third U-turn channel 24c is connected to the first V-phase module-side channel 23c, and the fourth U-turn channel 24d is connected to the third U-turn channel 24c without branching. The second V-phase module side channel 23d is connected to the fourth U-turn channel 24d.

  The first outlet-side flow path 25a is connected to the second W-phase module-side flow path 23f. The second outlet side channel 25b is connected to the first W-phase module side channel 23e. The third outlet side channel 25c is connected to the second V-phase module side channel 23d. The first outlet side flow path 25a, the second outlet side flow path 25b, and the third outlet side flow path 25c are combined on the cooling water outlet hole 12 side, and the cooling water outlet is in a state where the refrigerant merges at the connecting portion. It is discharged from the hole 12.

  The semiconductor modules 1 a to 1 c are arranged in the housing 20 so that the heat radiation surfaces of the semiconductor modules 1 a to 1 c are parallel to the liquid traveling direction in the cooling water inlet hole 11. On the other hand, the arrangement direction of the semiconductor module 1 a constituting the U phase, the semiconductor module 1 b constituting the V phase, and the semiconductor module 1 c constituting the W phase is substantially perpendicular to the liquid traveling direction in the cooling water inlet hole 11. In addition, the semiconductor modules 1 a to 1 c are arranged in the housing 20.

  In this embodiment, two inverter devices 120 are built in one housing 20. That is, three 2 in 1 semiconductor modules constitute an inverter for driving one motor, and two such inverters are provided, so six 2 in 1 semiconductor modules are provided.

  The capacitor cells 111 are not concentrated in one storage space, but are arranged adjacent to the plurality of module side surfaces 23 and separated from the plurality of regions. This allows cooling from both sides of the capacitor cell, leading to improved cooling performance of the capacitor cell 111. As a result, the capacitor integrated module 110 that occupies most of the floor area of the housing 20 can be downsized. it can.

  Furthermore, each semiconductor module 1 can be efficiently cooled by providing the module side surface flow path 23 along the heat radiation surfaces present on both surfaces of each of the semiconductor modules 1a to 1c and supplying cooling water.

  In the present embodiment, modules in the same phase are connected by an inter-module flow path forming body 27. The inter-module flow path forming body 27 has a role of connecting the flow paths corresponding to the semiconductor modules in which two phases exist without causing cooling water to flow between the two modules. Further, the inter-module flow path forming body 27 can increase the contact area between the flange surface present in the case 405 of the semiconductor module 1 and the housing 20, and thus also has a role of ensuring sealing performance.

  In this configuration, the semiconductor module 1 having the longitudinal direction in the direction parallel to the traveling direction of the liquid flowing in the cooling water inlet hole 11 and the outlet hole 12 and the module side flow paths 23a to 23f are provided. It is possible to distribute the cooling water approximately evenly with low pressure loss to each flow path at the branching and joining location. Further, since the reciprocation is performed in a three-branch state, the pressure loss can be reduced as compared with a method in which a cooler is configured by meandering one flow path without branching at all.

  Furthermore, since the V-phase semiconductor module 1b is arranged so as to be sandwiched between the opposing flows (the forward traveling direction 3a and the backward traveling direction 3b), it has the effect of offsetting the influence of the water temperature rise with the opposing flow. . That is, since the V-phase semiconductor module 1b is disposed so as to be sandwiched between the U-phase semiconductor module 1a and the W-phase semiconductor module 1c, it is easy to receive heat from the U-phase semiconductor module 1a and the W-phase semiconductor module 1c. The temperature tends to be higher than that of the U phase or the W phase. Therefore, the overall cooling performance can be improved by offsetting the influence of the water temperature rise with the opposing flow with respect to the V phase.

  Further, the inlet side flow paths 22a to 22c and the outlet side flow paths 25a to 25c shown in FIG. 5 are arranged on the control signal connector 30 side shown in FIG. 3, and the U-turn section flow path 24 of FIG. Arranged on the DC connector 140 side. Channels other than the module side channels 23a to 23f (inlet side channels 22a to 22c, outlet side channels 25a to 25c, and U-turn channel) branch and merge to distribute cooling water evenly to all modules. Although it has a function, it hardly contributes to cooling. Therefore, a signal line coming out from the control signal connector 30 and a bus bar coming out from the DC connector 140 are provided above the flow path portion that does not contribute to cooling, and the cooling water passage 21 in the housing 20 is provided. By increasing space efficiency, the power converter 100 can be reduced in size.

  The inlet-side channels 22a to 22c, the outlet-side channels 25a to 25c, and the U-turn channel are supplied with liquid toward the IGBT 125 and the diode 126 in the semiconductor modules 1a to 1c. Formed as follows. The chip mounting area 128a is provided inside the semiconductor module 1a, and the chip mounting area 128a is formed in parallel with the heat dissipation surface of the semiconductor module 1a. The inlet-side flow paths 22a and 22b are formed so that the flow directions 4a and 4b have a predetermined angle with respect to the heat radiation surface parallel to the chip mounting region 128a. Thereby, the chip mounting area 128a can be efficiently cooled. The same applies to the chip mounting areas 128b and 128c. Since the cooling performance can be improved in this way, the number of IGBTs 125 and diodes 126 in parallel and the element area can be reduced, and as a result, the semiconductor module 1 can be reduced in size.

  In addition, even if the cooling water inlet hole 11 and the cooling water outlet hole 12 are replaced, the flow path structure is symmetric with respect to the central V-phase semiconductor module 1b so that the cooling performance does not change. This has the effect of increasing the degree of freedom of attachment of the power converter 100.

  FIG. 6 is a view showing the positional relationship between the water channel structure and the semiconductor module according to the second embodiment of the present invention. In this embodiment, the structure is an example in which the number of inverter devices 120 is one, and the basic configuration is almost the same as that in FIG. Unlike the flow path configuration of Patent Document 1 (the heat radiation surfaces of all the semiconductor modules 1a to 1c are arranged in a direction perpendicular to the cooling water inlet hole 11), it is connected to the inlet side flow path 22 as shown in FIG. The heat radiating surface of the semiconductor module 1 is arranged in parallel with the liquid traveling direction in the cooling water inlet hole 11. As a result, the inlet-side flow path 22 and the outlet-side flow path 25 can distribute the cooling water approximately equally to the three semiconductor modules 1 and keep the pressure loss of the entire cooling water path small. Furthermore, the V-phase semiconductor module 1b that is susceptible to heat from the U-phase semiconductor module 1a and the W-phase semiconductor module 1c is disposed so as to straddle the opposing flows (the forward travel direction 3a and the backward travel direction 3b). Therefore, since the influence of the water temperature rise can be offset by the opposing flow, a decrease in cooling performance can be suppressed. Further, unlike the first embodiment, the inter-module flow path forming body 27 is not required, and the number of parts can be reduced.

  FIG. 7 is a view showing the positional relationship between the water channel structure and the semiconductor module according to the third embodiment of the present invention. The difference between the present embodiment and the first embodiment is the shape of the U-turn channel section. The shapes of the third U-turn flow path portion 24c and the fourth U-turn flow path portion 24d of the present embodiment are structured such that all three branched flow paths merge at the turn portion.

  For example, when the motor is in a locked (stall) state due to a curb ride on the vehicle or the like, heat may concentrate on a specific phase in which current flows among the semiconductor modules 1a to 1c of each phase. At this time, when heat generation concentrates on the V-phase semiconductor module 1b, it is desirable that the liquid can be supplied from the U-phase semiconductor module 1a side where the temperature rise is small to the V-phase return path. The shape of the U-turn flow path of the present embodiment has a structure in which all three branched flow paths merge at the turn portion. Therefore, when heat generation is concentrated on the V-phase semiconductor module 1b as described above, The liquid whose temperature has not increased can be supplied from the turn part flow path part 24a and the second U turn flow path part 24b toward the fourth U turn part flow path part 24d, and the effect of lowering the element temperature of the V phase is expected. it can.

  8-11 is the figure which showed the positional relationship of the water channel structure and semiconductor module which concern on 4th Embodiment of this invention. In this embodiment, as in FIGS. 5 and 7, the semiconductor modules 1 a to 1 c are arranged in the housing 20 so that the heat radiation surfaces of the semiconductor modules 1 a to 1 c are parallel to the liquid traveling direction in the cooling water inlet hole 11. Placed in. On the other hand, the arrangement direction of the semiconductor module 1 a constituting the U phase, the semiconductor module 1 b constituting the V phase, and the semiconductor module 1 c constituting the W phase is substantially perpendicular to the liquid traveling direction in the cooling water inlet hole 11. In addition, the semiconductor modules 1 a to 1 c are arranged in the housing 20.

  Further, the first U-turn portion channel 24a is connected to the second U-turn portion channel 24b, the third U-turn portion channel 24c is connected to the fourth U-turn portion channel 24d, and the fifth U-turn portion channel 24e is connected to the sixth U-turn portion. The point connected to the flow path 24f is also different from those in FIGS.

  FIG. 8 is a perspective view of a state in which the semiconductor modules 1a to 1c are inserted into the housing 20, and is characterized in that all the semiconductor modules 1a to 1c are sandwiched between opposing flows.

  9 is a cross-sectional view passing through the center line of the cooling water outlet hole 12 of FIG. 8, and FIG. 10 is a cross-sectional view passing through the center line of the cooling water inlet hole 11 of FIG. FIG. 11 is a flowchart schematically showing the flow direction around each module.

  Next, how the cooling water supplied from the cooling water inlet hole 11 is distributed to each module side surface flow path and how it is discharged to the cooling water outlet hole 12 will be described. First, the cooling water supplied from the cooling water inlet hole 11 is branched into three at the inlet-side flow path 22. The first U-phase module side channel 23a and the cooling water inlet hole 11 are connected by a first inlet side channel 22a, and the first V-phase module side channel 23c and the cooling water inlet hole 11 are connected by a second inlet side channel 22b. Then, the first W-phase module side channel 23e and the cooling water inlet hole 11 are connected by the third inlet side channel 22c.

  The first U-phase module-side flow path 23a, the second U-phase module-side flow path 23b, the first V-phase module-side flow path 23c, and the first The 2V-phase module side flow path 23d, the first W-phase module side flow path 23e, and the second W-phase module side flow path 23f are connected by U-turn section flow paths 24a to 24f, respectively.

  The second U-phase module side channel 23b and the cooling water outlet hole 12 are connected by the first outlet side channel 25a, and the second V-phase module side channel 23d and the cooling water outlet hole 12 are connected by the first outlet side channel 25b. Then, the second W-phase module side flow path 23f and the cooling water outlet hole 12 are connected by the third outlet side flow path 25c, and the three outlet side flow paths 25 are discharged to the cooling water outlet hole 12 in a joined state.

  The inlet side flow path 22 for branching the flow path is three-dimensionally intersected with the outlet side flow path 25 for merging the flow paths in the vertical direction so that all the semiconductor modules 1a to 1c are sandwiched between the opposing flows. It becomes possible. In this embodiment, since the flow path is branched into three, the pressure loss can be lowered as compared with the case where a single flow path is meandered without being branched at all to constitute a cooler. The effect of the rise can be offset by the opposing flow.

  12-14 is the figure which showed the positional relationship of the water channel structure and semiconductor module which concern on 5th Embodiment of this invention. In this embodiment, as in FIGS. 8 to 11, the inlet-side channel 22 that branches the channel is three-dimensionally intersected with the outlet-side channel 25 that joins the channel in the vertical direction.

  However, the fact that the semiconductor modules 1a to 1c are arranged in series from upstream to downstream in the order of U phase, V phase, and W phase, and that the flow path is bifurcated are as shown in FIGS. Different. Next, how the cooling water supplied from the cooling water inlet hole 11 is distributed to each module side surface flow path 23 and how it is discharged to the cooling water outlet hole 12 will be described.

  First, the cooling water supplied from the cooling water inlet hole 11 is branched into two at the inlet side flow path 22, and the two first U-phase module side flow paths 23 a and the cooling water inlet hole 11 are respectively connected to the first inlet side flow path 22 a. And the second inlet side flow path 22b. The first W-phase module side flow path 23e and the second W-phase module side flow path 23f are connected by the U-turn section flow path 24 on the side opposite to the surface where the cooling water inlet hole 11 and the cooling water outlet hole 12 exist. .

  Here, the two W-phase semiconductor modules 1c each independently form a flow path, the first U-turn section flow path 24a is connected to the second U-turn section flow path 24b, and the third U-turn section flow path 24c is the fourth U-turn section. Connected to the flow path 24d.

  The two second U-phase module side flow paths 23b and the cooling water outlet hole 12 are connected by the first outlet side flow path 25a and the second outlet side flow path 25b, respectively, and the two outlet side flow paths 25 are joined together. It is discharged to the cooling water outlet hole 12.

  The cooling water outlet hole 12 is provided on one surface of the housing 20 on the same side as the side where the cooling water inlet hole 11 is disposed with respect to the semiconductor modules 1a to 1c. The first inlet side channel 22a and the second inlet side channel 22b shown in FIG. 12 function as intermediate channels that connect the cooling water inlet hole 11 and the channel on the semiconductor module side. Similarly, the first outlet side channel 25a and the second outlet side channel 25b function as an intermediate channel that connects the coolant outlet hole 12 and the channel on the semiconductor module side.

  Further, in the present embodiment, the cooling water inlet hole 11 and the cooling water outlet hole 12 are formed at the heights of the semiconductor modules 1a to 1c in order to make a three-dimensional intersection with the inlet side flow path 22 and the outlet side flow path 25 in the vertical direction. They are arranged at different positions with respect to the vertical direction or the height direction of the flow path on the semiconductor module side. Here, three-dimensionally intersecting the inlet-side channel 22 and the outlet-side channel 25 in the vertical direction means that the first inlet-side channel 22a and the second outlet-side channel 25b are higher than the channel on the semiconductor module side. The first inlet-side channel 22a and the second outlet-side channel 25b are formed so that the projected portion of the first inlet-side channel 22a and the projected portion of the outlet-side channel 25 intersect when projected from the vertical direction. That is.

  Even with the arrangement of the semiconductor modules 1 of the present embodiment, it is possible to arrange all the semiconductor modules 1 so as to straddle the opposing flows, and configure a cooler by meandering one flow path without branching at all. The pressure loss can be further reduced, and the influence of the water temperature rise can be offset by the opposing flow in all the semiconductor modules 1.

  Here, the point that the influence of the water temperature rise can be offset by the opposing flow will be described with reference to FIG. FIG. 15 shows the relationship between the distance from the inlet hole, the liquid temperature, and the IGBT temperature. The temperature difference ΔT between the liquid temperature and the IGBT temperature is a value obtained by multiplying the heat resistance by the calorific value. If the flow velocity between the fins of each semiconductor module part is constant, it is a substantially constant value from the inlet hole to the outlet hole. Indicates. The liquid temperature receives heat from each semiconductor module and rises toward the outlet hole. For example, if the total inverter loss is 6 kW and 50% ethylene glycol aqueous solution is flowed at 10 L / min, the liquid temperature difference between the inlet hole and the outlet hole is about 10 ° C. The IGBT temperature of the conventional configuration is increased by the amount of increase in the liquid temperature, and the temperature of the IGBT near the outlet hole is increased. On the other hand, in the double-sided heat dissipation structure proposed in the present invention, the low-temperature side refrigerant is in contact with one side of the heat-dissipation surface, and the high-temperature side refrigerant is in contact with the opposite side of the heat-dissipation surface. Considering the temperature difference ΔT. Therefore, the temperature of the IGBT near the outlet hole is lower than that of the conventional structure, and as a result, the product life can be extended.

  FIG. 12 is a perspective view of a state in which the semiconductor module 1 is inserted into the housing 20, and is characterized in that all the semiconductor modules 1 arranged in parallel with the heat radiating surface straddle the opposing flows. 13 is a cross-sectional view passing through the center line of the cooling water inlet hole 11 of FIG. FIG. 14 is a flowchart schematically showing the flow direction around each module. In this embodiment, since the flow path is bifurcated, the pressure loss can be reduced as compared with the case where a single flow path meanders without being branched at all and the cooler is configured. The effect of the rise can be offset by the opposing flow.

  16 to 18 are views showing the positional relationship between the water channel structure and the semiconductor module according to the sixth embodiment of the present invention. In the present embodiment, like FIG. 12 to FIG. 14, the inlet-side channel 22 that divides the channel into two branches intersects with the outlet-side channel 25 that merges the channel in the vertical direction. However, of the four heat radiating surfaces of the two U-phase semiconductor modules 1a, two heat radiating surfaces close to the center of the housing 20 (one is the second U-phase module side channel 23b and the other is the first U-phase module side flow It differs from FIGS. 12-14 in supplying a refrigerant | coolant liquid from the inlet side flow path 22 to the path 23a). Next, how the cooling water supplied from the cooling water inlet hole 11 is distributed to each module side surface flow path 23 and how it is discharged to the cooling water outlet hole 12 will be described.

  First, the cooling water supplied from the cooling water inlet hole 11 is branched into two at the inlet-side flow path 22 and supplied to the heat radiating surfaces corresponding to the two heat radiating surfaces near the outside of the housing 20. The first inlet-side channel 22a and the first U-phase module side channel 23a are connected to the module in which the first U-phase module-side channel 23a is located outside the housing 20. On the other hand, the second inlet-side channel 22b and the second U-phase module side channel 23b are connected to the module in which the second U-phase module-side channel 23b is located outside the housing 20. The first W-phase module side flow path 23e and the second W-phase module side flow path 23f are connected by the U-turn section flow path 24 on the side opposite to the surface where the cooling water inlet hole 11 and the cooling water outlet hole 12 exist. .

  Here, the two W-phase semiconductor modules each independently form a channel, the first U-turn channel 24a is connected to the second U-turn channel 24b, and the third U-turn channel 24c is the fourth U-turn channel. Connected to the path 24d. The first outlet side channel 25a and the second U phase module side channel 23b are connected to the module in which the second U phase module side channel 23b is located at the center of the housing 20. On the other hand, the second outlet side channel 25b and the first U phase module side channel 23a are connected to the module in which the first U phase module side channel 23a is located at the center of the housing 20.

  Finally, the two outlet side flow paths 25 are discharged to the cooling water outlet hole 12 in a state where they merge. FIG. 15 is a perspective view of a state in which the semiconductor module 1 is inserted into the housing 20, and is characterized in that all the semiconductor modules 1 arranged in parallel with the heat dissipation surface straddle opposing flows. FIG. 17 is a cross-sectional view through the center line of the cooling water inlet hole 11 of FIG.

  FIG. 18 is a flowchart schematically showing the flow direction around each module. The flow path structure of this embodiment supplies other heat generation such as the capacitor integrated module 110 to the flow path adjacent space 22 in order to supply refrigerant liquid with a small increase in water temperature to the two heat radiating surfaces near the center of the housing 20. It has a function to actively cool the members. In addition, since the center of the housing 20 is a portion that is easily subjected to heat from many members, it is possible to improve the cooling performance by supplying a refrigerant liquid with a small increase in water temperature. This embodiment is particularly preferable when the refrigerant liquid does not flow backward.

  FIGS. 19-21 is the figure which showed the positional relationship of the water channel structure and semiconductor module which concern on 7th Embodiment of this invention. In the present embodiment, like FIG. 12 to FIG. 14, the inlet-side channel 22 that divides the channel into two branches intersects with the outlet-side channel 25 that merges the channel in the vertical direction. However, the arrangement of the semiconductor modules 1 is different from those shown in FIGS. The semiconductor module 1 is arranged in series in the order of two U-phase semiconductor modules 1a, two V-phase semiconductor modules 1b, and two W-phase semiconductor modules 1c in a clockwise direction from a location near the inlet-side flow path 22.

  In particular, the V-phase semiconductor module 1b is characterized by having a heat dissipation surface in a direction perpendicular to the U-phase semiconductor module 1a and the W-phase semiconductor module 1c. FIG. 19 is a perspective view of a state in which the semiconductor module 1 is inserted into the housing 20, and is characterized in that all the semiconductor modules 1 arranged in parallel with the heat radiating surface straddle the opposing flows. 20 is a cross-sectional view through the center line of the cooling water inlet hole 11 of FIG. 19 and FIG. 20, the module side surface channels 23c and 23d of the V-phase semiconductor module 1b are structured to form a U-turn portion channel 24.

  Next, how the cooling water supplied from the cooling water inlet hole 11 is distributed to each module side surface flow path 23 and how it is discharged to the cooling water outlet hole 12 will be described. First, the cooling water supplied from the cooling water inlet hole 11 is branched into two at the inlet side flow path 22, and the first U-phase module side flow path 23 a and the cooling water inlet hole 11 are connected to the first inlet side flow path 22 a and the second W. The phase module side flow path 23f and the cooling water inlet hole 11 are connected by the second inlet side flow path 22b.

  The first U-phase module side channel 23a and the first V-phase module side channel 23c are connected by the first corner channel 26a on the side opposite to the surface where the cooling water inlet hole 11 and the cooling water outlet hole 12 exist. The second U-phase module side flow path 23b and the second V-phase module side flow path 23d are connected by the second corner portion flow path 26b, and further, the first V-phase module side flow path 23c and the first W-phase module side flow path 23e are connected. The second V-phase module side channel 23d and the second W-phase module side channel 23f are connected by the fourth corner portion channel 26d.

  Here, the first V-phase side channel 23c and the second V-phase side channel 23d are characterized in that they constitute a first U-turn channel 24a and a second U-turn channel 24b, respectively. Finally, the second U-phase module side channel 23b and the cooling water outlet hole 12 are connected by the first outlet side channel 25a, and the first W-phase module side channel 23e and the cooling water outlet hole 12 are connected to the second outlet side channel. 25 b and are discharged to the cooling water outlet hole 12 in a state where the two outlet-side flow paths 25 are joined.

  The corner channel 26 has a function of individually changing the traveling direction of the refrigerant flowing in the module side channel 23 by about 90 °. Since the flow path structure of the present embodiment can make the flow path adjacent space 28 larger than the other embodiments, for example, even if other heat generating members such as the capacitor integrated module 110 are relatively large, It is easy to store and it is possible to cool them.

Claims (9)

A first semiconductor module having a first semiconductor chip, a first conductor plate facing one main surface of the first semiconductor chip, and a second conductor plate facing the other main surface of the first semiconductor chip. When,
A second semiconductor chip; a third conductor plate facing one main surface of the second semiconductor chip; and a fourth conductor plate facing the other main surface of the second semiconductor chip. A second semiconductor module disposed such that a three-conductor plate faces the second conductor of the first semiconductor module;
A refrigerant inlet,
A refrigerant outlet portion disposed on a side where the refrigerant inlet portion is disposed with respect to the first semiconductor module and the second semiconductor module;
A first flow path provided on a side opposite to the arrangement side of the first semiconductor chip across the first conductor plate of the first semiconductor module;
A second flow path provided on the opposite side of the first semiconductor chip across the second conductor plate of the first semiconductor module;
A third flow path provided on the opposite side to the arrangement side of the second semiconductor chip across the third conductor plate of the second semiconductor module;
A fourth flow path provided on the side opposite to the arrangement side of the second semiconductor chip across the fourth conductor plate of the second semiconductor module;
A first intermediate flow path for connecting the refrigerant inlet and the first flow path;
A second intermediate flow path for connecting the refrigerant outlet and the second flow path;
A third intermediate flow path for connecting the refrigerant inlet and the third flow path;
A fourth intermediate flow path for connecting the refrigerant outlet portion and the fourth flow path,
The first flow path and the second flow path are provided such that the flow direction of the refrigerant flowing through the first flow path is opposite to the flow direction of the refrigerant flowing through the second flow path,
The third flow path and the fourth flow path are provided so that the flow direction of the refrigerant flowing through the third flow path is opposite to the flow direction of the refrigerant flowing through the fourth flow path,
The refrigerant inlet portion and the refrigerant outlet portion are arranged at different positions with respect to the height direction of the first flow path,
The third interim flow path and the second intermediate passage, the projection portion of the projection portion and the third intermediate channel of the second during passage of projecting in the height direction of the first flow path cross A power conversion device formed as described above. The power conversion device according to claim 1,
The first intermediate channel is formed so as to have a bent portion in the middle of the first intermediate channel, and the flow direction of the refrigerant from the bent portion to the first channel is the main of the first semiconductor chip. The power converter formed so that it may become more than a predetermined angle with a surface. The power conversion device according to claim 1 or 2, wherein
The refrigerant inlet portion is formed such that the flow direction of the refrigerant flowing through the refrigerant inlet portion is parallel to the flow direction of the refrigerant flowing through the first flow path,
The power conversion device in which the refrigerant outlet part is formed so that the flow direction of the refrigerant flowing through the refrigerant outlet part is parallel to the flow direction of the refrigerant flowing through the fourth flow path. The power conversion device according to any one of claims 1 and 3,
The first channel and the second channel are connected on the opposite side of the first intermediate channel across the first semiconductor module,
The power conversion device, wherein the third flow path and the fourth flow path are connected on the opposite side to the fourth intermediate flow path with the second semiconductor module interposed therebetween. The power conversion device according to any one of claims 1 to 4,
The first semiconductor module has a first fin protruding in a direction perpendicular to a main surface of the first semiconductor chip,
The second semiconductor module is a power conversion device having second fins protruding in a direction perpendicular to a main surface of the second semiconductor chip. The power conversion device according to any one of claims 1 to 5,
A power conversion apparatus comprising: a smoothing capacitor module disposed between the second flow path and the third flow path, which is a space between the first semiconductor module and the second semiconductor module. The power conversion device according to any one of claims 1 to 6,
A housing for housing the first semiconductor module and the second semiconductor module;
The refrigerant inlet and the refrigerant outlet are disposed on one side of the housing,
The first intermediate flow path, the second intermediate flow path, the third intermediate flow path, and the fourth intermediate flow path are provided in an intermediate flow path forming portion that is formed integrally with the housing. The power conversion device according to any one of claims 1 to 7,
The first semiconductor module includes an upper arm circuit and a lower arm circuit configured to include the first semiconductor chip,
The second semiconductor module is a power conversion device including an upper arm circuit and a lower arm circuit configured to include the second semiconductor chip. The power conversion device according to claim 8, wherein
The first semiconductor module and the second semiconductor module are power conversion devices that are semiconductor modules for driving different motors.

Images