JP5229203B2 - Volatile organic compound processing equipment - Google Patents

Description

  The present invention relates to treatment of volatile organic compounds used for decomposing vapors of organic solvents and other organic compounds that are harmful when released into the air, such as toluene, xylene, and styrene, that is, volatile organic compounds (abbreviated as VOC). It relates to the device.

Painting factories, semiconductor factories, and printing factories use large amounts of organic solvents. VOCs discharged into the atmosphere from such factories have a serious adverse effect on the atmospheric environment, such as the formation of harmful organic fine particles by reaction with sunlight, ozone, etc., and increasing the ozone concentration in the atmosphere. It is known. For this reason, there is a strong demand to recover and detoxify VOCs.
In order to recover VOC, a gas concentrating rotor in which a sheet carrying a hydrophobic zeolite or activated carbon is formed in a honeycomb shape has been developed and spread. The VOC adsorbed and concentrated by the gas concentrating rotor is decomposed and detoxified by the catalyst and the combustion device and released to the atmosphere.

Devices for decomposing VOCs by discharge have also been developed. The configuration of the apparatus for decomposing VOC by electric discharge is a configuration in which a corrugated cardboard-shaped VOC adsorbent carrying hydrophobic zeolite is sandwiched between a pair of electrodes together with an insulator. Before the VOC adsorbent becomes saturated and cannot absorb VOC sufficiently, an AC voltage of 5 to 7 kV is applied between the electrodes to generate a discharge, and the generated discharge plasma desorbs the VOC from the VOC adsorbent. Further, the desorbed VOC is decomposed into water and carbon dioxide. While the VOC is decomposed by electric discharge, the same amount of gas to be processed flows as when no electric discharge is occurring. Note that if the gas is stopped when the VOC adsorbent is exposed to discharge to decompose the VOC, there is only one VOC adsorbent, so that the gas cannot be processed.
Note that the VOC adsorbent breaks through the fact that the VOC adsorbent becomes saturated and cannot sufficiently adsorb the VOC in the gas to be treated. (For example, see Patent Document 1)

Japanese Patent Application Laid-Open No. 2002-126445.

There is a demand for an apparatus that can decompose VOC and does not generate a substance that adversely affects the environment, consumes less power, and has a low apparatus cost. A conventional apparatus for decomposing VOC by electric discharge has the following problems.
(1) Since all VOC adsorbents are processed at the same time, it is necessary to increase the discharge current and therefore the power supply capacity, which increases the cost of the apparatus.
(2) Since the same amount of gas flows when discharge occurs as when no discharge occurs, nitrogen and oxygen in the gas react by discharge, and a large amount of harmful nitrogen oxides (abbreviated as NOx) Is generated.

The volatile organic compound processing apparatus according to the present invention includes an adsorbent that touches a gas to be treated and adsorbs a volatile organic compound, and a grounding that is arranged with the adsorbent interposed therebetween and generates an electric discharge when an AC voltage is applied. A pair of electrodes composed of an electrode and a high-voltage electrode ; a solid dielectric disposed between the pair of electrodes and between the adsorbent and the high-voltage electrode ; and provided between the dielectric and the high-voltage electrode. is, the generated power feeding layer you couple the high voltage electrode and the dielectric thermally and electrically, the discharge touching the adsorbent by applying a voltage of the alternating current between pairs of electrodes A switching element that switches between a first state and a second state in which the adsorber adsorbs a volatile organic compound without applying the voltage between the pair of electrodes and the dielectric and the power feeding layer. the high voltage electrode electrically coupled, the first Jo And those in which an electrode cooling mechanism for cooling in said second state.

The volatile organic compound processing apparatus according to the present invention includes an adsorbent that touches a gas to be treated and adsorbs a volatile organic compound, and a grounding that is arranged with the adsorbent interposed therebetween and generates an electric discharge when an AC voltage is applied. A pair of electrodes composed of an electrode and a high-voltage electrode ; a solid dielectric disposed between the pair of electrodes and between the adsorbent and the high-voltage electrode ; and provided between the dielectric and the high-voltage electrode. is, the generated power feeding layer you couple the high voltage electrode and the dielectric thermally and electrically, the discharge touching the adsorbent by applying a voltage of the alternating current between pairs of electrodes A switching element that switches between a first state and a second state in which the adsorber adsorbs a volatile organic compound without applying the voltage between the pair of electrodes and the dielectric and the power feeding layer. the high voltage electrode electrically coupled, the first Jo And an electrode cooling mechanism that cools in the second state, so that when changing from the first state to the second state, the temperature of the adsorbent can be quickly reduced and the adsorbent can adsorb volatile organic compounds. Can be.

It is a system block diagram of the volatile organic compound processing apparatus in Embodiment 1 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 1 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 1 of this invention. It is a figure explaining the sequence of the operation state which the group of a gas processing unit takes in the control system of the VOC processing apparatus in Embodiment 1 of this invention. It is a figure explaining the effect of the control system of the VOC processing apparatus in Embodiment 1 of this invention. It is a figure explaining another control system of the VOC processing device concerning this invention. It is a figure explaining another control system of the VOC processing device concerning this invention. It is a figure explaining the control system in the case of making the structure of the group of the VOC processing device concerning this invention variable. It is a figure explaining the structure of the gas processing unit in Embodiment 2 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 3 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 4 of this invention. It is a figure explaining the example of the structure of the electric power feeding layer in Embodiment 4 of this invention. It is the figure which showed the longitudinal cross-sectional view of the high voltage electrode which provided the insulating layer in the inlet_port | entrance part in Embodiment 4 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 5 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 6 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 7 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 8 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 9 of this invention. It is a figure explaining the structure of the gas processing unit in Embodiment 10 of this invention. It is a figure explaining the structure of the high voltage electrode which provided the insulator between the heat sinks in Embodiment 10 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 11 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 12 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 13 of this invention. It is a top view explaining the structure of the VOC processing apparatus in Embodiment 14 of this invention. It is a longitudinal cross-sectional view explaining the structure of the gas processing unit of the VOC processing apparatus in Embodiment 14 of this invention. It is a cross-sectional view explaining the electrode arrangement | positioning of the gas processing unit of the VOC processing apparatus in Embodiment 14 of this invention. It is a longitudinal cross-sectional view explaining the structure of the electrode of the VOC processing apparatus in Embodiment 14 of this invention. It is a figure explaining the change of the VOC adsorption amount by the position of the adsorption agent in the gas processing unit in the VOC processing apparatus in Embodiment 14 of this invention. It is a cross-sectional view explaining the electrode arrangement | positioning of the gas processing unit of the VOC processing apparatus in Embodiment 15 of this invention. It is a longitudinal cross-sectional view explaining the structure of the electrode of the VOC processing apparatus in Embodiment 15 of this invention. It is a longitudinal cross-sectional view in the position near the ground electrode of the VOC processing apparatus in Embodiment 15 of this invention. It is a cross-sectional view explaining the electrode arrangement | positioning of the gas processing unit of the VOC processing apparatus in Embodiment 16 of this invention. It is a top view explaining the structure of the VOC processing apparatus in Embodiment 17 of this invention. It is a longitudinal cross-sectional view explaining the structure of the gas processing unit of the VOC processing apparatus in Embodiment 17 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 18 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 19 of this invention. It is a figure explaining the structure of the VOC processing apparatus in Embodiment 20 of this invention. It is a system block diagram of the VOC processing apparatus in Embodiment 21 of this invention. It is a figure explaining the operation state which the VOC processing apparatus in Embodiment 21 of this invention takes. It is a figure explaining the sequence of the operation state which the group of a gas processing unit takes in the control system of the VOC processing apparatus in Embodiment 21 of this invention. It is a system block diagram of the VOC processing apparatus in Embodiment 22 of this invention. It is a figure explaining the operation state which the VOC processing apparatus in Embodiment 22 of this invention takes. It is a figure explaining the sequence of the operation state which the group of a gas processing unit takes in the control system of the VOC processing apparatus in Embodiment 22 of this invention. It is a system block diagram of the VOC processing apparatus in Embodiment 23 of this invention. It is a figure explaining the relationship between the VOC density | concentration in the process target gas in Embodiment 23 of this invention, and the VOC adsorption amount of the adsorption agent in each group of a gas processing unit.

Embodiment 1 FIG.
FIG. 1 is a system block diagram of a volatile organic compound processing apparatus (abbreviated as a VOC processing apparatus) in the first embodiment. The VOC processing apparatus includes a predetermined number of gas processing units 1 divided into a predetermined number (two or more) of groups that adsorb VOCs supplied in parallel and decompose by discharge, and an alternating current for causing discharge. A high voltage generator 2 that generates a high voltage, a voltage switching control mechanism 3 that applies a high voltage to a high voltage electrode of any gas processing unit 1, a filter 4 at a gas inlet, and each gas processing unit 1 A flow rate adjusting mechanism 5 for adjusting the flow rate of the gas flowing through the exhaust fan 6 and an exhaust fan 6. Here, the voltage switching control mechanism 3 is a discharge control mechanism in the present invention. The group of gas processing units 1 includes one or more gas processing units 1.
The gas processing unit 1 includes an adsorbent 1C that adsorbs VOC, a ground electrode 1A that is a pair of electrodes that generate discharge, and a high-voltage electrode 1D.

The VOC processing apparatus sucks the same amount of gas from the suction port by exhausting the gas from the apparatus by the exhaust fan 6. The gas that is inhaled by the VOC processing apparatus is called a processing target gas, and the gas exhausted from the VOC processing apparatus is called a processed gas. The mission of the VOC processing apparatus is to make the treated gas clean air that does not contain VOC or NOx.
The filter 4 is for removing components that have a high degree of adhesion, such as paint and oil, and that can be separated from the gas to be treated relatively easily. The filter 4 is useful but not essential to the VOC processor. If the gas that has been processed by another apparatus becomes the gas to be processed, and the component that can be removed by the filter 4 is not included in the gas to be processed, the filter 4 is unnecessary.

FIG. 2 is a diagram for explaining the structure of the VOC processing apparatus. FIG. 2 (a) shows a transverse sectional view, and FIG. 2 (b) shows a longitudinal sectional view. FIG. 3 is a diagram for explaining the structure of one gas processing unit 1. FIG. 3A shows a transverse sectional view, and FIG. 3B shows a longitudinal sectional view. 2A and 2B are cross-sectional views taken along the line BB in FIG. 2A, and FIG. 2A and FIG. 2B are cross-sectional views taken along the line AA in FIG. 3 (a).
As can be seen from FIG. 2 (a), in the first embodiment, there are 36 gas processing units 1 divided into 6 groups of 6 in a vessel 7 having a circular cross section. A broken line in FIG. 2A indicates a group division of the gas processing unit 1. As shown in FIG. 2 (b), there is a valve 5A for adjusting the gas flow rate for each group. In FIG. 2 (b), the gas to be processed enters the inside of the VOC processing device through the intake port 7A at the lower right of the container 7, and is further processed by the gas processing unit 1 arranged in parallel through the valve 5A. The gas is discharged from the exhaust port 7B at the lower left of the container 7 as processed gas. A filter 4 is provided outside the intake port 7A, and an exhaust fan 6 is provided immediately inside the exhaust port 7B. In FIG. 2 (b), the outer side of the container 7 is shown as a side view rather than a cross-sectional view.

  As shown in FIG. 3, one gas processing unit 1 includes a cylindrical ground electrode 1A, a cylindrical glass tube 1B having a hemispherical end inside the ground electrode 1A, a glass tube 1B and a ground. Between the adsorbent 1C that is an adsorbent disposed in the space between the electrodes 1A, the cylindrical high-voltage electrode 1D that is in close contact with the inner surface of the glass tube 1B, and between the high-voltage electrode 1D and the voltage switching control device 3 , A fuse 1F that blows when the current flowing through the high-voltage conductor 1E exceeds an allowable value, and a brush-like support material 1G that supports the high-voltage conductor 1E and flows current in the glass tube 1B. The The interval between the ground electrode 1A and the high-voltage electrode 1D is set to a value that can generate a discharge with the applied high voltage. The adsorbent 1C is a spherical hydrophobic zeolite, and the diameter of the hydrophobic zeolite is substantially the same as the interval between the high voltage electrode 1A and the glass tube 1B. As a result, one row of hydrophobic zeolite enters the high voltage electrode 1D and the glass tube 1B.

  A part of the adsorbent 1C in the entire VOC processing apparatus is present in each gas processing unit 1. Therefore, when a high voltage is applied to the high voltage electrode 1D of the gas processing unit 1, a part of the adsorbent 1C comes into contact with the discharge. In addition, the gas processing unit 1 includes an electrode pair of a ground electrode 1A and a high voltage electrode 1D, and the group of the gas processing unit 1 is also a group of electrode pairs.

  The left high-voltage conducting wire 1E in the figure of the fuse 1F is connected to the voltage switching element 3A. The voltage switching element 3 </ b> A is provided for each gas processing unit 1. A high-voltage conductor 1H connected to a high-voltage generating terminal 2 of the high-voltage generator 2 outside the container 7 enters the container through the high-voltage line inlet 7C of the container 7 and is connected to one terminal of each voltage switching element 3A. Connecting. A high voltage conductor 1E is connected to the other terminal of the voltage switching element 3A. When the voltage switching element 3A is turned on, a high voltage is applied to the high voltage electrode 1D of the corresponding gas processing unit 1. Necessary insulation is performed on a portion to which a high voltage is applied, such as the high voltage conductive 1E and the high voltage conducting wire 1H. Although not shown in the figure, the grounded terminal of the high voltage generator 2 and the ground electrode 1A of each gas processing unit 1 are electrically connected. Further, the high-pressure line introduction port 7C has necessary airtightness.

  As shown in FIG. 2 (a), one gas processing unit 1 is stored in the hole formed in the container 7 one by one. In addition, after arrange | positioning ground electrode 1A to the side surface of the hole formed in the container 7, and giving required wiring, another component is inserted and it is set as the gas processing unit 1. FIG. A space 7D between the hole for accommodating the gas processing unit 1 and the container 7 is a sealable cavity 7D, which is filled with cooling water and circulated. A partition wall 7E is provided at the center of the cavity 7D in FIG. 2B, and the partition wall 7E has one through hole 7F at the top. There is a cooling water supply port 7G below the container 7 and on the right side of the partition wall 7E. There is a cooling water discharge port 7H on the lower side of the container 7 and on the left side of the partition wall 7E. The water that has entered the cavity 7D from the cooling water supply port 7G moves upward due to the presence of the partition wall 7E, moves to the left side of the partition wall 7E through the through hole 7F, and further moves downward to discharge the cooling water. It is discharged from the outlet 7H.

Next, the operation will be described. First, the operation state of the gas processing unit 1 will be described. The gas processing unit 1 takes two operation states, an operation state A and an operation state B. The operation state A is a state in which the valve 5A is open and no high voltage is applied to the high voltage electrode 1D, and the adsorbent 1C adsorbs VOC. On the other hand, in the operation state B, the valve 5A is closed, a high voltage is applied to the high voltage electrode 1D, and a discharge is generated between the ground electrode 1A and the high voltage electrode 1D. In the operation state B, an alternating current of about 10 kV at about 1 kHz is applied to the high voltage electrode 1D. Then, a stable discharge is generated between the outer surface of the glass tube 1B, which is a dielectric surrounding the high-voltage electrode 1D, and the inner surface of the ground electrode 1A. In addition, a ceramic tube such as alumina or zirconia or a ceramic sprayed glass lining may be used as the dielectric instead of the glass tube.
The adsorbent 1C touches the discharge and the temperature rises to release the adsorbed VOC. The released VOC is decomposed into water and carbon dioxide by colliding with electrons or reacting with active species such as oxygen atoms and ozone generated by discharge. The VOC is desorbed from the adsorbent 1C, and the adsorbent 1C is regenerated to a state capable of adsorbing VOC.

  The lifetime of oxygen atoms, which have a stronger ability to decompose VOC than ozone, is as short as about 1 microsecond, and when it is generated, it disappears before moving. Therefore, the decomposition of VOC by oxygen atoms is performed in the immediate vicinity of the place where the discharge is generated. Since ozone has a relatively long life of about 100 seconds, ozone and VOC react and decompose VOC if ozone moves even at a location away from where the discharge occurs in gas processing unit 1. .

FIG. 4 is a diagram illustrating a sequence of operation states taken by the group of gas processing units 1 in the control method of the VOC processing apparatus. There is a phase 1 to a phase 6, and in the phase n, the group n is in the operation state B, and the rest is the operation state A. From phase 1 to phase 6 in order, the phase 6 is followed by returning to phase 1 repeatedly. In the first embodiment, one phase is 10 minutes and one cycle is 60 minutes.
The effect of the method based on the sequence of FIG. 4 (referred to as the present method) will be described with reference to FIG. In FIG. 5, the horizontal axis represents the time axis, and the vertical axis represents the power consumption of the VOC processing device. The solid line is the present method, the broken line is the continuous method (described later), and the dotted line is the intermittent method (described later). FIG. 5 shows that this method consumes less power than both the continuous method and the intermittent method. The integral value of power consumption in one cycle is almost the same as that of the present method and the intermittent method, and the continuous method is larger than these.

Here, the intermittent method is a method in Patent Document 1, and after adsorbing VOC sufficiently to the adsorbent 1C, all adsorbents are simultaneously discharged and processed while flowing the gas to be processed. . The continuous method is a method in which the adsorbent 1C is always regenerated by continuously generating discharge while flowing the gas to be processed.
As described in Patent Document 1, the higher the VOC concentration, the smaller the amount of energy required for VOC processing. As described above, the VOC is decomposed by the collision of discharged electrons or the reaction with active species such as oxygen atoms and ozone generated by the collision of discharged electrons with oxygen molecules. For this reason, the higher the concentration of VOC in the gas to be processed, the higher the probability that VOC reacts with active species or electrons, and the processing efficiency also increases. For this reason, in the continuous method in which VOC is not concentrated, the power consumption is larger than in the present method and the intermittent method in which VOC is concentrated.

  Now, comparing this method with the intermittent method, the intermittent method consumes almost the same amount of power as the present method in a short time, so that the power supply capacity of the device increases and the cost of the power supply device also increases. On the other hand, in this system, since VOC can be disassembled with high efficiency by constantly consuming small electric power, the power supply capacity of the apparatus can be reduced, and the cost of the VOC processing apparatus can be reduced.

  The number of groups of the gas processing unit 1, the processing cycle, the power consumption, and the like are determined so as to be appropriate values according to the assumed VOC concentration, the amount of processing target gas, and the like. Since it is necessary to prevent the adsorbent from breaking through, the processing cycle becomes longer in a large apparatus capable of using a large amount of adsorbent, and shorter in a small apparatus. Even when the VOC concentration fluctuates, when the average is taken in a cycle, the longer the cycle, the higher the probability that the amount of VOC enters a predetermined range and the lower the probability that the adsorbent breaks through. As the number of groups in the gas processing unit 1 is larger, the amount of adsorbent to be desorbed at a time is reduced, so that there is a high possibility that the power supply capacity can be further reduced. In order for the adsorbent to desorb the VOC, even if the amount of the adsorbent is small, it is necessary to carry out the treatment for a predetermined time, so even if the number of groups is increased, the operation state B in each group is taken. It is necessary to make the time longer than the predetermined time. The power consumption is set such that the VOC can be desorbed from the adsorbent and decomposed when the assumed maximum amount of VOC is adsorbed within the time that the gas processing unit 1 takes the operating state B.

  In this method, the gas to be processed does not flow to the gas processing unit 1 in the operation state B. This is to prevent NOx from being generated as much as possible. By injecting discharge energy, fast electrons are generated, and the generated fast electrons collide with oxygen molecules or nitrogen molecules in the gas to be processed, thereby generating harmful NOx. If the gas flow is stopped during the discharge treatment, the NOx concentration in the gas treatment unit 1 increases, but the amount of gas is small, so the amount of NOx produced is small. When the NOx concentration in the gas is about 3%, the NOx decomposition and generation are in an equilibrium state, and the NOx concentration does not increase even when the discharge energy to be input increases. When the gas is stopped, this equilibrium state is established in the internal space of the gas processing unit 1, and the amount of NOx generated is only about 3% of the volume of the internal space of the gas processing unit 1. The volume of the internal space of the gas processing unit 1 is much smaller than the gas flow rate, and the amount of generated NOx is reduced. When the same amount of gas is flowed at the time of occurrence of discharge as when no discharge has occurred, NOx is generated in proportion to the discharge energy to be input.

Note that the effect of reducing the amount of NOx produced by stopping the gas flow during the occurrence of discharge can also be applied in an intermittent manner. However, when applied to the intermittent method, the gas to be processed cannot flow to the VOC processing apparatus during the occurrence of discharge, and the gas to be processed generated during that time is stored somewhere, or the gas to be processed is not generated. It is necessary to do so. On the other hand, in this method, only a part of the gas processing units 1 stops the gas flow, and the VOC processing apparatus as a whole has an effect that the processing of the processing target gas is not interrupted.
When the discharge is touched to the adsorbent that has sufficiently adsorbed VOC, the adsorbent temperature rises, the adsorbed VOC is rapidly desorbed, and when flowing gas, the VOC that could not be decomposed by the discharge is treated. There was a problem of leaking out of the VOC processing apparatus as a spent gas. By stopping the gas at the time of discharge, VOC does not come out of the gas processing unit 1. The desorbed VOC stays in the gas processing unit 1 and is decomposed by reacting with electrons and active species.
In the first embodiment, the discharge is sequentially generated in some gas processing units 1 and the gas flow is stopped at the time of the discharge, but only one of them may be performed.

  In desorbing VOC from the adsorbent 1C, the higher the temperature of the adsorbent 1C, the higher the desorption efficiency. However, if the temperature of the gas in the space where the discharge occurs becomes high and the temperature of the glass tube 1B becomes too high, the withstand voltage of the glass tube 1B is lowered, and the glass tube 1B may cause dielectric breakdown. If the glass tube 1B breaks down, it will not function as the gas processing unit 1. Even if the dielectric breakdown does not occur, when the temperature of the glass tube 1B rises, the dielectric loss tan δ of the glass tube 1B increases and the power consumption increases. For this reason, in the first embodiment, the ground electrode 1A is water-cooled to indirectly suppress the temperature rise of the glass tube 1B so that the temperature of the glass tube 1B and the adsorbent 1C is about 100 ° C. even during discharge. Yes. In conventional gas concentrating rotors and the like, a phenomenon (called a saturation phenomenon) occurs in which the rate at which VOC is desorbed from the adsorbent decreases as the VOC concentration around the adsorbent increases. The VOC is desorbed by heating to about 300 ° C. so that the VOC can be desorbed. In this method in which VOC is desorbed by electric discharge, the desorbed VOC is decomposed in situ, so that the VOC can be desorbed even if the temperature of the adsorbent is suppressed to about 100 ° C. without causing a saturation phenomenon. Note that the temperature is not necessarily about 100 ° C. The temperature may be higher or lower than about 100 ° C., as long as the temperature can protect the dielectric and perform the desorption process efficiently.

  Since the adsorbent 1C is heated only to about 100 ° C. even during the occurrence of discharge, the temperature of the adsorbent immediately decreases even after changing to the operation state A where no discharge is performed, and VOC can be adsorbed. In addition, the temperature in the gas processing unit 1 in the operation state A is about the temperature of the cooling water. Even when there is a gas processing unit 1 that cannot sufficiently adsorb VOC immediately after returning from the operation state B to the operation state A, the majority of the gas processing units 1 are in a state that can sufficiently adsorb VOC and regenerate the adsorbent. In addition, there is an effect that there is no need to stop the decomposition of VOC.

In the first embodiment, any one group of the gas processing units 1 always takes the operating state B. However, as shown in FIG. May be a simple sequence.
In the first embodiment, the number of gas processing units 1 in each group is the same, and the time taken for the operation state B is also the same. This is for operating the VOC processing apparatus constantly and efficiently. The number of gas processing units 1 in the group may not be the same, or the time for taking the operation state B, the power consumption of discharge, and the like may be changed. However, in that case, the efficiency may decrease unless some measures are taken at the same time. Any control method that generates a discharge by applying a high voltage in order to a group of gas processing units 1 in which VOC is sufficiently adsorbed on the adsorbent 1C can be obtained by increasing the VOC concentration. This has the effect of reducing the power required for disassembling the battery and reducing the power supply capacity.

In the first embodiment, a plurality of gas processing units 1 are provided, but the gas processing units 1 may not be provided. If the adsorbent can be divided into a plurality of parts and the VOC is sufficiently adsorbed by the adsorbent and a part of the separated adsorbent is processed by the discharge generated between the electrodes in order, the decomposition of the VOC This has the effect of reducing the power required for reducing the power supply capacity. It should be noted that “can be divided into a plurality of parts” includes the case where the way of division changes depending on the case.
Either the ground electrode 1A or the high-voltage electrode 1D may be shared by a plurality of electrode pairs. It is sufficient that either the ground electrode 1A or the high-voltage electrode 1D has the same number as the pair so that a plurality of pairs of the ground electrode 1A and the high-voltage electrode 1D can be configured.

  Here, measures generally required in the VOC processing device are classified into performance maintenance measures and efficiency improvement measures. The performance maintenance measure is a measure for operating the VOC processing device without any problem. The efficiency improvement measure is a measure for improving the efficiency of the VOC processing apparatus. Implement performance maintenance measures and efficiency improvement measures as necessary.

  Allowing the number of gas processing units 1 in each group to be different may be a measure for improving efficiency. For example, in FIG. 2A, a cavity is provided in the center of the container 7, but the gas processing unit 1 may be provided at this location. In that case, one more gas processing unit 1 can be provided even in a container 7 having the same outer dimensions. However, when the 37 gas processing units 1 are similarly divided into 6 groups, the number of gas processing units 1 in the group is 6 in 5 groups and 7 in 1 group. Become. If the power supply capacity of the VOC processing apparatus has a margin, no countermeasure is required. However, when the power supply capacity is marginal, a performance maintenance measure for increasing the power supply capacity is required so that even seven groups can be handled. Furthermore, as a measure for improving efficiency, the power consumption is changed by changing the time of the operation state B at the same time or the power consumption is made the same in the operation state B according to the number of the gas processing units 1 that are simultaneously in the operation state B. It is also necessary to change a certain time. If the power supply capacity is marginal, it is necessary to increase the power supply capacity by 7/6 when the time during the operation state B is the same. When the time during the operation state B is changed, the power supply capacity is 37%. / 36 times required.

  When the total number of gas processing units 1 does not become an integral multiple of the number of groups, two or more types of groups may be used, and one group in each type may take operation state B in order. For example, 37 gas processing units 1 may be divided into 4 groups of 3 groups of type A and 5 groups of 5 groups of type B, and the operation sequence as shown in FIG. Good. In FIG. 7, any one group from the group A1 to the group A3 is in the operation state B in order, and any one group from the group B1 to the group B5 is in the operation state B in order. In FIG. 7, the time taken for the operation state B is the same for the type A and the type B, and the power consumption is proportional to the number of the gas processing units 1. Even if it controls in this way, each gas processing unit 1 can process VOC efficiently similarly. The time taken for the operation state B for the types A and B and the cycle may be set to different values so that the time for the adsorbent to contact the gas to be processed is almost the same for the types A and B. Further, if there is no unacceptable difference between the types A and B regarding the VOC processing, the power consumption and processing time of the types A and B may be determined in any way.

As a measure for improving efficiency when the total number of gas processing units 1 does not become an integral multiple of the number of groups, a measure as shown in FIG. 8 may be taken. In FIG. 8, the number of the gas processing unit 1 that takes the operation state B is written in the parenthesis at the place where the operation state B is obtained. Referring to FIG. 8, the number of the gas processing units 1 taking the operating state B is always constant, but the configuration of the group of the gas processing units 1 taking the operating state B changes each time. Initially, the gas processing units 1 of Nos. 1 to 7 are simultaneously in the operating state B, and then the gas processing units 1 of Nos. 36, 37, and 1 to 5 are simultaneously in the operating state B. Even in this case, each gas processing unit 1 can similarly process VOC efficiently. The grouping of the gas processing units 1 is performed by a voltage switching control mechanism 3 that is a discharge control mechanism.
Such control can be easily performed without adding special piping or the like when the gas flow is not stopped in the operation state B. The piping of the gas to be processed becomes complicated, and a valve 5A is required for each gas processing unit 1, but similar control may be performed when the gas flow is stopped at the time of discharge.

In the first embodiment, the VOC processing apparatus having the configuration shown in FIGS. 2 and 3 has been described. However, a pair of electrodes exist with an adsorbent that adsorbs VOC in between, and a discharge generated between the electrodes is generated. Any configuration may be used as long as the configuration touches the adsorbent. Although the dielectric is disposed around the high-voltage electrode, a dielectric may be added toward the ground electrode. A dielectric may be disposed between the high-voltage electrode and the ground electrode by providing a gap between the high-voltage electrode and the ground electrode. Furthermore, the dielectric may be eliminated and an AC or DC high voltage may be applied.
In the first embodiment, the valve 5A for stopping the gas flow at the time of discharge is provided on the intake side of the gas processing unit 1, but may be provided on the exhaust side. Since the valve 5A is provided for each group of the gas processing units 1, it is advantageous in reducing the number of parts and realizing low cost. A valve 5A may be provided for each gas processing unit 1. In this case, the cost of the apparatus becomes high, but there may be a case where more advanced control can be performed and the processing efficiency of VOC can be improved.
In the first embodiment, the voltage switching element 3A is provided for each gas processing unit 1, but may be provided for each group of gas processing units 1. For each group, the number of voltage switching elements 3A is reduced, which is advantageous in terms of cost reduction.

Although the gas flow is completely stopped at the time of discharge, the gas flow rate flowing through the adsorbent when touching the discharge may be made smaller than the flow rate when not touching the discharge. Consider how much the gas flow rate can be reduced to reduce the generation of NOx. Here, X is the ratio of the gas flow rate when touching the discharge to the gas flow rate when not touching the discharge. X is a real number less than 1 and greater than or equal to 0. As described earlier, when the NOx concentration increases, the reaction in which NOx decomposes cannot be ignored. When the NOx concentration is small and the reaction that decomposes NOx can be ignored, the amount of NOx generated is the same regardless of the gas flow rate. Therefore, when the gas flow rate is increased by X times, the NOx concentration in the gas becomes 1 / X times. When the NOx concentration in the gas increases, the NOx decomposition reaction cannot be ignored, and the NOx concentration in the gas becomes smaller than 1 / X times. When the NOx concentration in the gas is smaller than 1 / X, the effect of reducing the generation of NOx can be obtained.
Instead of the valve 5A, a mechanism using an opening and a member that closes the opening may be used, and any flow rate adjusting mechanism may be used as long as the flow rate of the gas flowing through the adsorbent in contact with the discharge can be sufficiently reduced. A flow rate adjusting mechanism may be provided for each gas processing unit 1.

  To suppress the generation of NOx, a sufficient effect can be obtained by stopping or reducing the supply of processing target gas containing nitrogen at the time of discharge, but gas treatment during discharge of inert gas such as argon and helium and oxygen gas If it supplies to the unit 1, generation | occurrence | production of NOx can further be reduced. In particular, when oxygen gas is flowed, more oxygen atoms and ozone are generated, and the VOC decomposition efficiency can be further improved. For the purpose of reducing NOx, a gas in which a predetermined component supplied to the gas processing unit 1 during discharge is mixed at a predetermined concentration is referred to as a special compound gas. In the case of one kind of component such as oxygen gas, it is also called a special compound gas. The special compound gas may be recovered and reused.

In the first embodiment, hydrophobic zeolite is used as the adsorbent. However, the hydrophobicity has an effect that VOC can be adsorbed even when the gas to be treated has a lot of moisture. In the case of performing pretreatment such as drying the gas to be treated in advance, the adsorbent may not be hydrophobic. Although the hydrophobic zeolite is spherical, the adsorbent may have any shape as long as the gas to be treated can be passed through and can be disposed between the electrodes. The adsorbent may be a high silica adsorbent other than zeolite, such as meso bolus silicate, dealuminated faujasite, high silica pentasil zeolite, silica gel, or other types of adsorbent. Any adsorbent may be used as long as it can adsorb and desorb VOC.
The above also applies to other embodiments.

Embodiment 2
In the second embodiment, the electrode configuration inside the gas processing unit 1 is changed. FIG. 9 shows a diagram for explaining the structure of the gas processing unit 1 in the second embodiment. FIG. 9A shows a transverse sectional view, and FIG. 9B shows a longitudinal sectional view. A dielectric film 1J is coated on the inner surface of the ground electrode 1A, a single row of spherical hydrophobic zeolite is disposed, and a metal cylindrical high voltage electrode 1D is disposed. Other configurations are the same as those of the first embodiment.

In the second embodiment, since the dielectric film 1J is coated on the ground electrode 1A, the dielectric can also be cooled by water cooling the ground electrode 1A. Therefore, the discharge current density when the temperature of the dielectric film 1J is set to about 100 ° C. can be increased as compared with the case of the first embodiment, and the gas processing unit 1 can be further downsized.
Also in the second embodiment, VOC can be processed efficiently with a small power source capacity, and generation of NOx can be reduced.
Instead of coating the dielectric film 1J on the inner surface of the ground electrode 1A, the ground electrode 1A may be configured by bringing a metal into close contact with the outside of the dielectric tube.

Embodiment 3 FIG.
In the third embodiment, the electrode configuration inside the gas processing unit 1 is changed to change the first embodiment so as to cool the high voltage electrode. FIG. 10 is a diagram for explaining the structure of the gas processing unit 1 according to the third embodiment. FIG. 10A shows a transverse sectional view, and FIG. 10B shows a longitudinal sectional view. In addition, the BB cross section in Fig.10 (a) is FIG.10 (b), and the AA cross section in FIG.10 (b) is FIG.10 (a).

A high-pressure electrode 1D made of a metal cylinder has a structure in which cooling water can flow inside. The high-voltage electrode 1D is a double-structured cylinder, and there is a cooling water supply port 1N through which cooling water flows into one end of the inner cylinder. The space between and returns to the reverse and exits from the cooling water discharge port 1P. A dielectric film 1J is coated on the outer surface of the high-voltage electrode 1D. That is, the high voltage electrode 1D that is an electrode adjacent to the dielectric is provided with an electrode cooling mechanism.
Since the inner surface of the high-voltage electrode 1D (the surface with which the cooling water contacts) is not coated, the cooling water has a specific resistance of 10 ⁴ (Ω ×) so that the high-voltage electrode 1D is not connected to the ground via the cooling water. m) More than pure water.
Outside the dielectric film 1J, a single row of spherical hydrophobic zeolite as the adsorbent 1C is arranged as in the second embodiment, and a metal cylindrical ground electrode 1A is arranged. Cooling water does not flow into the cavity 7D outside the ground electrode 1A.
Other configurations are the same as those of the first embodiment.

Also in the third embodiment, VOC can be processed efficiently with a small power source capacity, and generation of NOx can be reduced.
In the third embodiment, since the high voltage electrode 1D is coated with the dielectric film 1J, the dielectric film 1J can also be cooled by water cooling the high voltage electrode 1D. Therefore, when the temperature of the dielectric film 1J is set to about 100 ° C., which is the same as in the first embodiment, the gap between the ground electrode 1A and the high-voltage electrode 1D is higher than that in the first embodiment where the ground electrode 1A is cooled. The temperature of a certain discharge space can be increased. That is, even if the discharge current density is increased and the temperature of the discharge space is increased, the temperature of the dielectric 1J can be maintained at about 100 ° C. Since the discharge current density can be increased, the gas processing unit 1 can be further downsized for the same output. When there is a dielectric adjacent to the ground electrode 1A, such as coating the ground electrode 1A with the dielectric film 1J, the discharge current density can be increased by cooling the ground electrode 1A. If both the high-voltage electrode 1D and the ground electrode 1A are cooled, the discharge current density can be further increased.

In addition, by coating an insulating film on all surfaces of the high-voltage electrode 1D that are in contact with the cooling water, it is not necessary to use pure water, and cooling can be performed using normal tap water or industrial water.
The above also applies to other embodiments for cooling the electrodes.

Embodiment 4 FIG.
In the fourth embodiment, the third embodiment is modified so that a glass tube is used instead of the dielectric film in the third embodiment. FIG. 11 is a diagram for explaining the structure of the gas processing unit 1 according to the fourth embodiment. FIG. 11A shows a transverse sectional view, and FIG. 11B shows a longitudinal sectional view. In addition, the BB cross section in Fig.11 (a) is FIG.11 (b), and the AA cross section in FIG.11 (b) is FIG.11 (a).
The structure of the high voltage electrode 1D is substantially the same as that of the third embodiment. However, the outer surface of the high voltage electrode 1D is not coated with a dielectric film. A glass tube 1B is disposed outside the high-voltage electrode 1D, and a power supply layer 1Q that electrically and thermally couples the glass tube 1B and the high-voltage electrode 1D is provided between the glass tube 1B and the high-voltage electrode 1D. If the electrical coupling between the glass tube 1B and the high voltage electrode 1D is insufficient, abnormal discharge occurs between the high voltage electrode 1D and the glass tube 1B. If the thermal bonding is insufficient, the glass tube 1B cannot be cooled sufficiently. The power feeding layer 1Q is for preventing such a situation from occurring.
Other configurations are the same as those of the third embodiment.

FIG. 12 shows several examples of the structure of the power feeding layer 1Q. 12 (a) shows a case where steel wool 1Q1 is used, FIG. 12 (b) shows a case where metal mesh 1Q2 having spring properties is used, and FIG. 12 (c) shows a spring from above the steel wool 1Q1. FIG. 12 (d) shows the case where the shape metal alloy 1Q3 is used. In any case, the power supply layer 1Q is mounted on the outer surface of the high voltage electrode 1D, and then the high voltage electrode 1D with the power supply layer 1Q mounted is inserted into the glass tube 1B.
In order to enhance electrical and thermal coupling, it is desirable that the power feeding layer 1Q is thin. In order to insert the high-voltage electrode 1D equipped with the power feeding layer 1Q into the glass tube 1B, the power feeding layer 1Q has a predetermined flexibility and a predetermined thickness. Although depending on the material of the power supply layer 1Q, the thickness of the power supply layer 1Q is preferably about 0.5 mm or more.

When using steel wool 1Q1, it is set as the wire diameter from which required softness | flexibility is obtained, and it is set as the volume ratio from which required heat conductivity is obtained. Even when the metal mesh 1Q2 is used, the wire diameter is determined from the required flexibility. Further, the mesh density is determined from the viewpoint of heat conduction. Also when using shape memory alloy 1Q3, various characteristics are determined from the same viewpoint.
The power feeding layer 1Q may be any material having predetermined conductivity and heat conduction characteristics, and a conductive grease, a conductive adhesive, a conductive putty, a conductive clay, a conductive polymer, a metal plate, or the like can be substituted. It is good also as the electric power feeding layer 1Q which braided copper and aluminum with higher heat conductivity instead of steel wool. Furthermore, in order to increase the conductivity, a conductive layer may be provided on the inner surface of the glass tube 1B by plating such as nickel, aluminum, chromium, or gold.

Also in this embodiment, VOC can be processed efficiently with a small power source capacity, and emission of NOx can be reduced.
By using the glass tube 1B as the dielectric, it is possible to save the trouble of coating the high voltage electrode 1A with the dielectric film 1J and to reduce the cost.
By providing the power supply layer 1Q, the discharge current density when the temperature of the glass tube 1B is set to about 100 ° C., which is the same as that of the first embodiment, can be increased as compared with the case of the first embodiment. Can be made smaller.
In addition, you may use tubes, such as a ceramic, instead of a glass tube as a dielectric. If there is a possibility that a gap is generated between the electrode and a solid dielectric such as a glass tube, the dielectric and the electrode are coupled electrically and thermally so that no gap is generated. By providing the power feeding layer, it is possible to stably generate a discharge and maintain the cooling efficiency.

The electrode configuration in this embodiment is a case where the high-voltage electrode is inside and the ground electrode is outside, and a solid dielectric is arranged just outside the high-voltage electrode, but the dielectric is arranged inscribed in the ground electrode. In the case where a dielectric is disposed inside the high-voltage electrode or outside the ground electrode in an electrode configuration in which the high-voltage electrode and the ground electrode are interchanged, the same effect can be obtained when the power supply layer is provided between the dielectric and the electrode. There is. Furthermore, even in the case of a prismatic or planar electrode, the same effect can be obtained by a configuration in which a power feeding layer is provided between the dielectric and the electrode.
FIG. 13 is a diagram showing a longitudinal sectional view of the high-voltage electrode 1D. By providing an insulating layer 1R such as silicon carbide (SiC) or silicon (Si) rubber at the entrance of the glass cross section, it is possible to prevent dielectric breakdown due to creeping discharge and improve reliability.
The above also applies to other embodiments having a power feeding layer.

Embodiment 5 FIG.
In the fifth embodiment, the configuration of the adsorbent in the gas processing unit 1 is changed. FIG. 14 is a diagram for explaining the structure of the gas processing unit 1 according to the fifth embodiment. FIG. 14A shows a cross-sectional view, and FIG. 14B shows a vertical cross-sectional view. The adsorbent 1C has a structure in which a flat plate having protrusions and having elasticity is rounded into a cylindrical shape. In the adsorbent 1C, a component that adsorbs VOC is added to the surfaces of the flat plate and the protrusion. As can be seen from FIG. 14 (a), the protrusion of the adsorbent 1C also serves as a member that supports the glass tube 1B. Other configurations are the same as those of the first embodiment.

  Also in the fifth embodiment, VOC can be efficiently processed with a small power source capacity, and generation of NOx can be reduced.

Embodiment 6 FIG.
In the sixth embodiment, similarly to the fifth embodiment, the configuration of the adsorbent in the gas processing unit 1 is changed. FIG. 15 is a diagram for explaining the structure of the gas processing unit 1 according to the sixth embodiment. FIG. 15A shows a cross-sectional view, and FIG. 15B shows a vertical cross-sectional view. As shown in FIG. 15, the adsorbent 1 </ b> C is a cylinder (doughnut shape) with a missing central portion. An adsorbent 1C having a gas passage in the form of a honeycomb (honeycomb) in the longitudinal direction of the cylinder is disposed between the ground electrode 1A and the glass tube 1B. The gas passage is parallel to the gas flow direction indicated by the arrow in FIG. Here, a structure in which a large number of tubes having a small cross-sectional area are integrated is called a honeycomb shape. The honeycomb-like adsorbent 1C also serves as a member that supports the glass tube 1B. Electrodes are arranged perpendicular to the gas passages, and discharge is also generated substantially perpendicular to the gas passages. Other configurations are the same as those of the first embodiment.
The adsorbent 1C having such a shape is formed by forming a hole in the center portion after forming the hydrophobic zeolite into a cylindrical shape, or winding and stacking a sheet-like hydrophobic zeolite having a thin gas passage. In many cases, the sheet can be formed at a lower cost.

Also in the sixth embodiment, VOC can be efficiently processed with a small power source capacity, and generation of NOx can be reduced.
If the adsorbent 1C is a dielectric, a discharge is generated perpendicular to the wall surface of the gas passage, so that the adsorbent 1C exhibits the effect of stabilizing the discharge, similar to the glass tube 1B that is a dielectric. In addition, since the dielectric strength of the adsorbent 1C is not so large, the reliability of the apparatus is higher when the dielectric such as the glass tube 1B is between the electrodes.

If the electrodes are arranged in the intersecting direction even if not perpendicular to the adsorbent 1C and a discharge occurs between the electrodes, the adsorbent 1C has an effect of contributing to the stabilization of the discharge. The adsorbent 1C may not be a donut shape but may be a square or other shapes. Similarly, the electrode may not be cylindrical but may be a flat plate. Any structure may be used as long as the electrode is arranged so that a high voltage can be applied in a direction intersecting the wall surface of the gas passage of the adsorbent 1C.
The above also applies to other embodiments.

Embodiment 7 FIG.
In the seventh embodiment, the configuration of the adsorbent 1C in the gas processing unit 1 is changed with respect to the first embodiment. FIG. 16 shows a diagram for explaining the structure of the gas processing unit 1 according to the seventh embodiment.
FIG. 16A shows a transverse sectional view, and FIG. 16B shows a longitudinal sectional view. As shown in FIG. 16, the adsorbent 1 </ b> C is a cylindrical column (doughnut-shaped) having a height of about 5 to 100 mm and lacking a central portion obtained by sintering hydrophobic zeolite so as to form a large number of fine holes. An adsorbent 1C that constitutes a gas passage in the longitudinal direction of the cylinder is disposed so as to overlap between the ground electrode 1A and the glass tube 1B. The inner diameter and outer diameter of the donut are sized so that they can be inserted as little as possible between the glass tube 1B and the ground electrode 1A. The lower the adsorbent 1C, the easier to manufacture and the higher the yield, but the higher the adsorbent 1C, the better.

The diameter and the porosity of the adsorbent 1C are determined so that the pressure loss is less than a predetermined value and the necessary VOC adsorption capacity is obtained. For example, in order to make the adsorbent 1C thickness 5 mm and the pressure loss at a wind speed of 1 m / sec to 50 Pa (= about 0.0005 atm) or less, the diameter of the hole is about 0.01 to 1 mm, and the porosity is 5 It is made to be about 10 to 40%, desirably about 80%. In order to reduce the pressure loss, it is desirable that the pore diameter is large and the porosity is high, but in order to adsorb VOC, it is desirable that the pore diameter is small and the porosity is low. As the diameter of the holes increases, the number of holes decreases and the total surface area of the holes also decreases. In adsorbing VOC, it is advantageous that the total surface area of the pores is large. As the porosity increases, the amount of adsorbent 1C per unit volume decreases, and the amount of VOC that can be adsorbed per unit volume decreases.
Other configurations are the same as those of the first embodiment.

The adsorbent 1C is manufactured by mixing a hydrophobic zeolite powder with a substance such as urethane into a furnace and sintering it. When sintering in a furnace, urethane etc. burns and holes are formed after that. The adsorbent 1C having a predetermined diameter and a predetermined porosity can be easily manufactured at a low cost by adjusting the size of the material to be mixed such as urethane.
The adsorbent 1C having such a shape is preferably a hydrophobic zeolite, but other than natural zeolite and zeolite, one of high silica adsorbents such as mesoporous silicate, dealuminated faujasite, high silica pentasil zeolite, and silica gel is used. The same effect can be obtained even if one or a mixture of two or more is used. You may mix | blend metals, such as platinum, gold | metal | money, titanium dioxide, manganese dioxide which have a catalytic action of oxidative decomposition at the time of sintering of an adsorbent.

Also in the seventh embodiment, VOC can be efficiently processed with a small power source capacity, and generation of NOx can be reduced.
Since the adsorbent 1C is a dielectric, when a discharge occurs so as to cross the adsorbent 1C, the adsorbent 1C exhibits the effect of stabilizing the discharge, like the glass tube 1B that is a dielectric.
Since the adsorbent 1C is manufactured by sintering, there is an effect that it can be manufactured at low cost.
The above also applies to other embodiments.

Embodiment 8 FIG.
The eighth embodiment is an embodiment in which the sixth embodiment is changed so as to eliminate the glass tube 1B that is a dielectric. FIG. 17 is a diagram for explaining the structure of the gas processing unit 1 according to the eighth embodiment. FIG. 17 (a) shows a transverse sectional view, and FIG. 17 (b) shows a longitudinal sectional view. As shown in FIG. 17, the adsorbent 1 </ b> C is a cylinder (doughnut shape) with a missing central portion. An adsorbent 1C having a gas passage in a honeycomb shape in the longitudinal direction of the cylinder is disposed between the ground electrode 1A and the high-voltage electrode 1D. The adsorbent 1C having the honeycomb also serves as a member that supports the high-voltage electrode 1D. Electrodes are arranged perpendicular to the gas passages, and discharge is also generated substantially perpendicular to the gas passages. Other configurations are the same as those of the first embodiment.
The adsorbent 1C having such a shape is molded in the same manner as in the sixth embodiment.

  Also in the eighth embodiment, VOC can be efficiently processed with a small power source capacity, and generation of NOx can be reduced. There is no dielectric part such as the glass tube 1B, the structure is simpler than that of the sixth embodiment, and it can be manufactured at a lower cost. Since the adsorbent 1C is a dielectric, this embodiment 8 also has an effect that stable discharge can be generated. Since the dielectric strength of the adsorbent 1C is not so high, the reliability of the apparatus is lower than when a dielectric other than the adsorbent 1C is disposed between the electrodes. The eighth embodiment is applied when the reliability of the device does not have to be so high, such as when the current density is small.

Embodiment 9 FIG.
The ninth embodiment is a case where the gas processing unit 1 is placed vertically. FIG. 18 is a diagram for explaining the structure of the gas processing unit 1 according to the ninth embodiment. FIG. 18A shows a cross-sectional view on a horizontal plane, and FIG. 18B shows a vertical cross-sectional view on a plane perpendicular to FIG. FIG. 18 is obtained by rotating FIG. 3 in the first embodiment by 90 degrees so that the fuse 1F is on the top. The entire VOC processing apparatus is also rotated by 90 degrees, although not shown. Other configurations are the same as those of the first embodiment.

Also in the ninth embodiment, VOC can be efficiently processed with a small power source capacity, and the generation of NOx can be reduced. In the case of using a granular adsorbent, there is a feature that it is easier to enclose the adsorbent in the vertical orientation.
Although the ninth embodiment is based on the first embodiment, it is possible to apply the gas processing unit 1 in a vertical arrangement in other embodiments.

Embodiment 10 FIG.
In the tenth embodiment, the third embodiment is modified such that the gas processing unit is placed vertically and the high-voltage electrode 1D is cooled by a heat pipe. Vertical installation means that the high-voltage electrode 1D and the like are arranged in a direction perpendicular to the ground. A diagram for explaining the structure of the gas processing unit 1 is shown in FIG. FIG. 19A shows a cross-sectional view on a horizontal plane, and FIG. 19B shows a vertical cross-sectional view on a plane perpendicular to FIG. 19A corresponds to the AA cross section of FIG. 19B, and FIG. 19B corresponds to the BB cross section of FIG. 19A.

Here, the heat pipe 14 which is an electrode cooling mechanism used for the high voltage electrode 1D will be described. The heat pipe 14 closes the lower end of a copper tube as the high-voltage electrode 1D, encloses the refrigerant 14A inside the tube, and includes a heat radiating plate 14B for heat radiation at the top. Water is mainly used as the refrigerant 14A. The reason for using water is that it has a low global warming potential and is inexpensive.
The heat radiating plate 14B is formed by superposing thin aluminum plates at a predetermined interval. The upper end of the high voltage electrode 1D is connected to the high voltage conducting wire 1E, and a high voltage is applied to the entire heat sink 14B. The thickness of the heat radiating plate 14B and the interval between the heat radiating plates 14B are determined so that a surface area capable of obtaining the required cooling capacity can be obtained in a usable space.
The heat pipe 14 removes heat generated by the discharge from the high-voltage electrode 1D and the dielectric film 1J by the latent heat of vaporization of the refrigerant 14A. The evaporated refrigerant vapor is deprived of heat by the heat radiating plate 14B, cooled and condensed, and becomes a refrigerant liquid again.

Also in this embodiment, VOC can be efficiently processed with a small power source capacity, and generation of NOx can be reduced.
The effect that the high-voltage electrode 1D and the dielectric film 1J are efficiently cooled to increase the discharge current density, and the gas processing unit 1 can be further reduced in size is the same as that of the third embodiment. Furthermore, the use of the heat pipe 14 facilitates maintenance because it is not necessary to manage pure water. Further, since there is no need to circulate the cooling water, a pump for circulating the cooling water becomes unnecessary, and the operating cost can be reduced.

  When the heat pipe 14 is used as the high voltage electrode 1D, a high voltage is also applied to the heat radiating plate 14B, and abnormal discharge may occur from the heat radiating plate 14B. In order to avoid this, when the cooling efficiency may be slightly reduced, an insulator is used for the heat radiating plate 14B or an insulating layer is coated. Alternatively, as shown in FIG. 20, a safe gas processing unit can be designed by connecting the high voltage electrode 1D and the upper portion of the heat pipe 14 with an insulator 1S such as glass, ceramic, or epoxy. When the high voltage electrode 1D is exposed to a corrosive gas, the copper pipe is covered with stainless steel to prevent the copper pipe from being corroded. Note that the high-voltage electrode 1D may not be made of copper as long as the conductivity and the thermal conductivity are as high as necessary.

The refrigerant to be contained in the heat pipe may be anything other than water as long as it has a high cooling efficiency and a low global warming potential.
Similar effects can be obtained even when a solid dielectric such as a glass tube as shown in the fourth embodiment is used instead of the dielectric film 1J.
Although the heat pipe is applied to the high-voltage electrode for cooling, the heat electrode may be applied to the ground electrode for cooling. Both the high-voltage electrode and the ground electrode may be cooled by a heat pipe.
The above also applies to other embodiments using a heat pipe.

Embodiment 11 FIG.
In this eleventh embodiment, a flat electrode is used. FIG. 21 is a diagram for explaining the structure of the VOC processing apparatus according to the eleventh embodiment. FIG. 21 (a) shows a longitudinal sectional view, FIG. 21 (b) shows a transverse sectional view, and FIG. 21 (c) shows a transverse sectional view at another position. 21B corresponds to FIG. 21A, the BB cross section in FIG. 21A corresponds to FIG. 21B, and the CC cross section in FIG. 21B corresponds to FIG. Corresponds to c).
In FIG. 21, there are four gas processing units 1. One gas processing unit 1 is less than 2 cm in height, and has a width and a depth of about several tens of centimeters. In FIG. 21, in order to explain the structure, it is enlarged and expressed in the height direction.

The gas processing unit 1 is sandwiched between upper and lower planar cooling water passages 7J. The cooling water enters from the cooling water supply port 7G on the front side on the upper right side not shown in FIG. 21A, passes through the cooling water passage 7J, and exits from the cooling water discharge port 7H on the upper left side. There are two partition walls 7E, and the cooling water passage 7J makes one and a half reciprocations left and right in FIG. As shown in FIG. 21 (b), at the position of the BB cross section, there is one partition wall 7E and a through hole 7F.
The processing target gas that has passed through the filter 4 enters the inside of the container 7 from the intake port 7A on the right side, passes through the inside of the gas processing unit 1, and is exhausted from the exhaust port 7B on the left side. There is an exhaust fan 6 immediately in front of the exhaust port 7B.

The gas processing unit 1 has a ground electrode 1A on the upper and lower surfaces, and a high voltage electrode 1D having a dielectric film 1J such as ceramic coated on the outer surface in the center. Between the high voltage electrode 1D and the upper and lower ground electrodes 1A, there is an adsorbent 1C which is a granular hydrophobic zeolite. An insulator 7 </ b> K is provided on the inner side surface of the container 7 so that a discharge does not occur between the inner side surface of the container 7. The interval between the high voltage electrode 1D and the ground electrode 1A is about 5 mm, and an alternating voltage of about 20 kV is applied to the high voltage electrode 1D.
The high-voltage electrode 1D is connected to the voltage switching element 3A via the high-voltage conductor 1E and the fuse 1F, and the high-voltage conductor 1H connected to the other end of the voltage switching element 3A is the high-voltage line inlet at the upper part on the exhaust side of the container 7 It goes out of the container 7 from 7C and is connected to the high voltage generator 2.

On the exhaust side of the gas processing unit 1, as shown in FIG. 21 (c), a predetermined number (eight in the eleventh embodiment) rectangular exhaust ports 1K are slightly larger than the width of the exhaust port 1K. Be at a great distance. On the exhaust side of the exhaust port 1K, there is a shielding plate 1L that opens and closes the exhaust port 1K. The shielding plate 1L is a plate having the same size as the exhaust port 1K and having a smaller number of openings. When the shielding plate 1L moves to the left and right, all the exhaust ports 1K of the gas processing unit 1 open and close simultaneously. In FIG. 21 (c), the exhaust port 1K of the uppermost gas processing unit 1 is closed, and the other exhaust ports 1K of the gas processing unit 1 are open. In FIG. 21, the flow rate adjusting mechanism 5 (not shown) controls the movement of the shielding plate 1L.
The operation state A in the eleventh embodiment is a state in which the exhaust port 1K is opened and a high voltage is not applied to the high voltage electrode 1D. The operation state B is a state in which the exhaust port 1K is closed and a high voltage is applied to the high voltage electrode 1D to discharge.

  Next, the operation will be described. The four gas processing units 1 are controlled by the voltage switching control device 3 and the flow rate adjusting mechanism 5 so that each of the four gas processing units 1 takes the operating state B in order and the other gas processing units 1 are in the operating state A. FIG. 21 shows a case where the uppermost gas processing unit 1 is in the operating state B.

Also in the eleventh embodiment, VOC can be processed efficiently with a small power supply capacity, and the generation of NOx can be reduced.
In the eleventh embodiment, since a plurality of stacked gas processing units 1 are housed in one container 7, a practical apparatus can be obtained at a lower cost. In addition, you may make it provide the pipe | tube 7, the piping of process target gas, and a cooling water for every one gas processing unit 1. FIG.
The above also applies to other embodiments having the same configuration.

Embodiment 12 FIG.
In this twelfth embodiment, a flat electrode and a honeycomb adsorbent are used. FIG. 22 is a diagram for explaining the structure of the VOC processing apparatus according to the twelfth embodiment. FIG. 22 (a) shows a longitudinal sectional view, FIG. 22 (b) shows a transverse sectional view, and FIG. 22 (c) shows a transverse sectional view at another position. 22B corresponds to FIG. 22A, the BB cross section in FIG. 22A corresponds to FIG. 22B, and the CC cross section in FIG. 22B corresponds to FIG. Corresponds to c).
The adsorbent 1C is a honeycomb-like hydrophobic zeolite. Discharge occurs almost at right angles to the walls of the honeycomb gas passage. Other structures are the same as those in the eleventh embodiment.

  Also in the twelfth embodiment, VOC can be processed efficiently with a small power source capacity, and the generation of NOx can be reduced. Since the honeycomb-shaped adsorbent is used, the pressure loss when the gas flow is made becomes small, and a more practical VOC processing apparatus is obtained.

Embodiment 13 FIG.
In the previous embodiments, the discharge was generated at right angles to the gas flow direction. However, the thirteenth embodiment is a case where the discharge is generated parallel to the gas flow direction. FIG. 23 is a diagram for explaining the structure of the VOC processing apparatus according to the thirteenth embodiment. FIG. 23 (a) shows a transverse sectional view, and FIG. 23 (b) shows a longitudinal sectional view. Note that the AA cross section in FIG. 23B corresponds to FIG. 23A, and the BB cross section in FIG. 23A corresponds to FIG. However, in FIG. 23 (b), only the inside of the container 7 is a sectional view.
Four containers 7 containing the gas processing units 1 having a horizontally long rectangular cross section are arranged in a stack of four vertically. Each container 7 is connected with a supply pipe 8 and an exhaust pipe 9 for the gas to be treated. In front of the exhaust pipe 9, there is a valve 5A. Gas flows from right to left in the figure. The supply pipe 8 is one at the inlet of the gas to be processed, but branches toward each gas processing unit 1, and the exhaust pipe 9 from each gas processing unit 1 merges into one. An exhaust fan 6 is disposed in front of the exhaust port 7B.

In the gas processing unit 1, a mesh-shaped ground electrode 1A is provided on the exhaust side, and a linear or rod-shaped high-voltage electrode 1D is disposed with a honeycomb-shaped adsorbent 1C interposed therebetween. The ground electrode 1A is coated with a dielectric film 1J such as ceramic. The thickness of the adsorbent 1C is set to a thickness suitable for generating discharge at a high voltage to be applied. The high voltage electrode 1D is connected to the high voltage generator 2 that generates an alternating high voltage from the intake side via the high voltage conductor 1E, the fuse 1F, the voltage switching element 3A, and the high voltage conductor 1H. In order to prevent unnecessary discharge from occurring, an insulator 7K having a predetermined width is added to the inner side surface of the container 7.
The flow rate adjusting mechanism 5 controls the opening and closing of the valve 5A, the voltage switching control device 3 controls the voltage switching element 3A, one gas processing unit 1 sequentially takes the operating state B, and the other gas processing units 1 Take operating state A.

Also in the thirteenth embodiment, VOC can be efficiently processed with a small power source capacity, and the generation of NOx can be reduced.
Since the discharge is generated in the gas flow direction, the electrode is mesh-shaped, linear, or rod-shaped so that the gas can flow. Even if it is not mesh-shaped, it may be a plate with holes of the required size or a plurality of linear or rod-shaped electrodes arranged at intervals, and it can flow a gas flow and generate a discharge. If possible, the electrode may have any shape.

Since the ground electrode 1A is covered with the dielectric film 1J and an AC voltage is applied, a discharge having a high power density can be stably generated, and a compact VOC processing apparatus can be obtained. The high voltage electrode 1D may be covered with a dielectric. If a dielectric is appropriately disposed between the high-voltage electrode and the ground electrode, the power density of discharge can be increased and the VOC processing apparatus can be made compact.
When it is not necessary to increase the power density of the discharge so much, it is not necessary to dispose a dielectric between the high voltage electrode and the ground electrode. In that case, when the ground electrode is formed into a plane such as a mesh, the high voltage electrode is formed into a line, and a negative high voltage is applied to the high voltage electrode, stable discharge is easily obtained.
The above also applies to other embodiments having the same configuration.

Embodiment 14 FIG.
In the fourteenth embodiment, a cylindrical high voltage electrode cooled by a heat pipe and a ground electrode made of a metal mesh (metal mesh) or punching metal (perforated metal plate) are used in a configuration that generates a discharge parallel to the gas flow direction. Is the case. FIGS. 24 to 27 are diagrams for explaining the configuration of the VOC processing apparatus according to the fourteenth embodiment. 24 is an overall view of the system, FIG. 25 is a longitudinal sectional view of the inside of the gas processing unit 1, FIG. 26 is a transverse sectional view showing an electrode arrangement inside the gas processing unit 1, and FIG. 27 is a VOC processing. It is a longitudinal cross-sectional view explaining the structure of the electrode of an apparatus. 26 corresponds to FIG. 27, and the AA section in FIG. 27 corresponds to FIG.

  In FIG. 24, one VOC processing apparatus is constituted by four towers of gas processing units 1 each having a sealable compartment. The VOC processing apparatus sucks the gas to be processed with the exhaust fan 6 and removes dust, paint waste, and the like with the filter 4. In the figure, the three gas processing units 1 from the top open both the inlet side valve 5A and the outlet side valve 11D, and adsorb the processing target gas to the adsorbent to purify the air. Further, the gas processing unit 1 in the lowermost stage is sealed by closing the inlet side valve 5A and the outlet side valve 11D, and a high voltage is applied from the high voltage power source 2 through the voltage switching element 3A, so that desorption processing by discharge is performed. Has been done.

FIG. 25 shows a longitudinal sectional view of the inside of the gas processing unit 1. The gas processing unit 1 shown in FIG. 25 is in a discharge regeneration mode in which the valves 5A and 11D are closed and discharging is performed. In order to keep the temperature of the glass tube 1B from rising too high and to operate at around 100 ° C., cooling is performed by the heat pipe 14 that also serves as the high-voltage electrode 1D. The heat pipe 14 has the same configuration as that of the tenth embodiment as shown in FIG.
The gas processing unit 1 includes a rectangular cylindrical metal structural member 1T through which a gas to be processed passes, and a predetermined number of pillars 1U on the outer side of the outermost ground electrode 1A in a direction intersecting with the flow of the gas to be processed. The structural member 1T is connected to the supply pipe 8 and the exhaust pipe 9, and constitutes a compartment in which gas does not leak to the outside. The structural member 1T is a steel plate having a predetermined thickness, and a reinforcing rib for increasing the strength is provided at a predetermined position on the outside. Holes for inserting one glass tube 1B at a time are provided in the upper and lower surfaces of the rectangular tubular structural member 1T. The glass tube 1B is inserted into this hole and fixed at a predetermined position. The column 1U supports the outermost ground electrode 1A to which the load of the adsorbent 1C is applied, and connects the upper surface and the lower surface of the structural member 1T to make it more sturdy. The column 1U is arranged at a position where there is a ground electrode 1A parallel to the gas flow so as not to disturb the gas flow as much as possible.

An insulator 1V is installed inside the upper surface and the lower surface of the structural member 1T so that no discharge occurs between the structural member 1T and the high-voltage electrode 1A. The insulator 1V is also provided with a hole through which the glass tube 1B is passed. However, the gas to be processed is prevented from leaking as a structure having airtightness between the hole of the insulator 1V and the glass tube 1B.
Further, the heat pipe 14 is cooled by forcibly applying air to the heat radiating plate 14B by the cooling fan 15A. The periphery of the heat radiating plate 15A is surrounded by a cylindrical air guide 15B so as to form a ventilation path in which the air flow by the cooling fan 15A is stabilized. In order to prevent external dust or dust from being sucked by the cooling fan 15A, filters 15C are provided at the inlet and outlet of the ventilation path. A cylindrical air guide 15B serving as a ventilation path is provided on the structural member 1T. If the glass tube 1B can be appropriately cooled by natural heat exchange between the heat radiating plate 14B and the outside air, the cooling fan 15A, the air blowing guide 15B, and the filter 15C are unnecessary.

FIG. 26 shows the electrode arrangement inside one gas processing unit 1. In FIG. 26, there are four rows of high voltage electrodes 1D in seven rows. The position of the high-voltage electrode 1D in the vertical direction in the drawing is arranged so as to be intermediate between the positions in adjacent rows. The reason for this arrangement is to prevent the gas to be processed from passing through the portion of the high-voltage electrode 1D so that the gas to be processed flows as uniformly as possible in the discharge space. The number of high voltage electrodes 1D in one row and the number of rows may be any number.
FIG. 27 is a longitudinal sectional view for explaining the configuration of the high-voltage electrode 1D and its surroundings. The high voltage electrode 1D is a cylinder in which water is sealed as a coolant. A glass tube 1B is installed concentrically outside the high voltage electrode 1D, and a power supply layer 1Q made of a flexible metal having good electrical and thermal conductivity is provided between the high voltage electrode 1D and the glass tube 1B. Yes. A predetermined number of heat dissipating plates 14B are provided on the high voltage electrode 1D. The heat radiating plate 14B is shared by the heat pipe 14 that cools all four rows of high-voltage electrodes 14D shown in FIG. Here, in order to avoid complexity in the longitudinal sectional view of FIG. 27 and the like, the air guide 15B and the like are not shown. Since a high voltage is applied to the high-voltage electrode 1D and the heat radiating plate 14B, suitable members are arranged to prevent discharge from occurring between the high-pressure electrode 1D and the heat radiating plate 14B. In addition, as shown in FIG. 20, if a high voltage is not applied to the heat radiating plate 14B, a member for preventing discharge from occurring with the air blowing guide 15B or the like is unnecessary.

The ground electrode 1A is disposed so as to surround each high-voltage electrode 1D squarely. The ground electrode 1A is installed so that the shortest distance between the ground electrode 1A and each glass tube 1B, that is, the discharge gap length is uniform at a predetermined value in the range of 5 to 20 mm. If the discharge gap is short, there is an advantage that the applied voltage may be small. If the discharge gap is long, there is an advantage that the number of electrodes can be reduced although it is necessary to increase the applied voltage. The discharge gap is determined comprehensively in consideration of various conditions such as performance values to be realized, cost, and restrictions that must be observed.
The adsorbent 1C is granular and filled in a range surrounded by the outermost ground electrode 1A.

Since the ground electrode 1A also has a portion that intersects with the flow of the gas to be processed, the ground electrode 1A is made of a metal mesh or punching metal so that the gas to be processed can easily flow. In the ground electrode 1A other than the outermost side, the mesh size of the metal mesh and the hole diameter of the punching metal are set to a size that allows the adsorbent 1C to pass through easily. For example, it is about 1.5 times the diameter of the adsorbent 1C which is granular. In order to generate discharge efficiently, the hole diameter is about 6 mm or less. The reason is that it is known that the discharge occurs in a columnar shape having a diameter of about 1 to 4 mm, and the number of discharges is about 3 mm. If the hole diameter is about 6 mm, the decrease in the number of discharge columns due to the presence of holes can be suppressed to about 10%. From the above, when a spherical adsorbent having a particle diameter of 2 mm is used, the hole diameter of the ground electrode 1A is about 3 mm or more, preferably about 3 to 6 mm. In a pellet mold having a particle diameter of 3 mm, the hole diameter is about 4.5 mm or more, preferably about 4.5 to 6 mm. In the outermost ground electrode 1A in the direction crossing the flow of the gas to be processed, the mesh size of the metal mesh and the hole diameter of the punching metal are set so that the granular adsorbent 1C does not leak. And less than the diameter of the adsorbent 1C. The outermost ground electrode 1A in the direction parallel to the flow of the gas to be processed is not provided with a hole so that the adsorbent 1C does not leak.
Other structures are the same as those in the thirteenth embodiment.

The operation is the same as in the thirteenth embodiment. Since the cross section of the ground electrode 1A on the horizontal plane is square and the cross section of the high-voltage electrode 1D is circular, the discharge density on the horizontal plane is not uniform, but the square ground electrode 1A has a long gap between the electrodes. The discharge time is adjusted so that the adsorbent 1C near the corner can be desorbed to a necessary extent.
Also in this embodiment, VOC can be efficiently processed with a small power source capacity, and generation of NOx can be reduced. By making the hole diameter of the ground electrode 1A sufficiently larger than the diameter of the adsorbent 1C, the outermost ground electrode in the gas processing unit 1 can be inserted even if the adsorbent is introduced from one place when the adsorbent 1C is packed. Since the adsorbent 1C spreads over the entire discharge space surrounded by 1A, assembly is facilitated.
Note that it is not necessary that all ground electrodes 1A in the discharge space have the same hole diameter. For example, in the ground electrode 1A in the horizontal direction in FIG. 26, the number of holes may be reduced, the diameter of the holes may be reduced, or the holes may be eliminated. The reason is that the ground electrode 1A is parallel to the direction in which the gas to be processed flows, and therefore the gas to be processed can flow without a hole.

If the cross section of the ground electrode 1A is a regular hexagon, the change in the distance between the high-voltage electrode 1D and the ground electrode 1A is smaller than that in the case of a square, and the dead space (the portion not between the high-voltage electrode 1D and the ground electrode 1A) Less). If it is allowed to generate a dead space, it may be a regular octagon.
The high-voltage electrode 1D has a cylindrical shape, but may have a square column shape with a predetermined roundness at the corner. If the high voltage electrode 1D is formed in a quadrangular prism shape, the variation in the distance between the high voltage electrode 1D and the ground electrode 1A can be reduced. The reason for rounding the corners of the quadrangular prism is to prevent the discharge from concentrating on the corners. The corners are not necessarily rounded.

Furthermore, the discharge power can be saved by considering the amount of VOC adsorbed by the adsorbent 1C. In FIG. 28, when the VOC in the gas to be processed cannot be completely adsorbed and VOC of 10% of the VOC concentration at the inlet of the gas processing unit 1 remains in the processed gas exiting from the gas processing unit 1, for example. The figure explaining the VOC adsorption amount of 1 C of adsorbent of this is shown.
FIG. 28A is a conceptual diagram illustrating the distance from the inlet of the gas to be processed. FIG. 28B shows a change in the VOC adsorption amount of the adsorbent 1C depending on the distance from the inlet of the gas processing unit 1. The distance here is expressed as a relative distance which is a ratio to the total length of the adsorbent. In FIG. 28 (b), the vertical axis represents the adsorbed rate, which means what percentage of the actually adsorbed amount of the adsorbent 1C adsorbable VOC.
FIG. 28A shows the case where the discharge is generated perpendicular to the gas flow, but even when the discharge is generated parallel to the gas flow as in the present embodiment, it depends on the distance from the inlet of the gas processing unit 1. The change in the adsorption rate of the adsorbent 1C is as shown in FIG.

As shown in FIG. 28 (b), the adsorbent 1C adsorbs 100% of VOC from the portion near the inlet in the gas processing unit 1 to about half of the total length. The adsorbed rate gradually decreases downstream of almost half of the entire length, and is about 10% in the portion close to the outlet.
Here, a portion where almost 100% of the VOC upstream from the center of the full length of the adsorbent 1C is adsorbed is referred to as the windward portion, and a portion where the downstream VOC can be sufficiently adsorbed is referred to as the leeward portion. In FIG. 28 (b), the adsorption rate averaged at the windward is close to 100%, but the average adsorption rate at the leeward is about 50%. Since the amount of energy required for desorbing VOC from the adsorbent 1C is proportional to the amount of adsorbed VOC, the time for generating discharge in the leeward is about half that of the windward. In this way, it is possible to save energy that is wasted in the lee when the discharge time in the leeward and the leeward is the same.

The discharge energy amount may be changed with the same discharge time. In FIG. 25, the number of high-voltage electrodes 1D is the same in the leeward and leeward, but the number of high-voltage electrodes 1D in the same area may be reduced in the leeward. Note that if the number of high voltage electrodes 1D within the same area is changed, the minimum distance between the high voltage electrode 1D and the ground electrode 1A, that is, the discharge gap also changes and the discharge voltage also changes. There is a need to have a separate high-voltage power supply. Even when the amount of discharge energy is changed between the windward and leeward areas, it is necessary to separately provide a high-voltage power supply for the windward and leeward areas. If a plurality of high-voltage power supply devices are used, the manufacturing cost of the device increases, but the number of high-voltage power supply devices and their voltages are determined by comprehensively judging the cost and performance.
Here, it is assumed that the windward and leeward parts are divided at approximately the center of the entire length of the adsorbent 1C, but the position to be divided differs depending on the total length of the adsorbent 1C. If the total length of the adsorbent 1C is long, the ratio of the windward becomes large. The reason for this is that if there is a VOC processing apparatus having the characteristics shown in FIG. 28 (b), whether or not VOC remains in the treated gas depends on the amount of adsorbent 1C that can sufficiently adsorb VOC, that is, the length of the leeward part. This is because the length of the adsorbent 1C is increased and the longer portion enters the windward portion.

  The cross-sectional area of the space holding the adsorbent in the direction in which the gas to be processed flows, the total length of the adsorbent in the direction in which the gas to be processed flows, the size and number of high voltage electrodes to be arranged, and the minimum between the high voltage electrode and the ground electrode The distance is the flow rate per unit time of the gas to be processed to be processed, the VOC concentration in the gas to be processed, the ease of passing the gas in the space holding the adsorbent, the structural strength, the cycle of adsorption and desorption, the production Design with comprehensive consideration of cost and operation cost. For example, consider the following points. It is necessary to set the total amount of the adsorbent to a value commensurate with the period and the VOC concentration so that the adsorbent does not break through within the treatment cycle. The cross-sectional area of the space holding the adsorbent and the gas flow rate are determined from the flow rate of the gas to be processed. The total length of the adsorbent is determined so that no VOC that is not adsorbed immediately before the start of desorption is generated, and the pressure loss of the gas falls within a predetermined range. The shape of the space for holding the adsorbent may be determined by determining the size and number of the discharge gap and the high-voltage electrode, or the shape of the space for holding the adsorbent may be determined after the discharge gap is first determined.

By providing the column 1U outside the outermost ground electrode 1A in the direction crossing the flow of the gas to be treated, the outermost ground electrode 1A can be deformed or damaged by the weight of the filled adsorbent 1C. The sex becomes smaller. Moreover, since the upper surface and the lower surface of the structural member 1T are connected, the structural strength of the structural member 1T is increased. The column 1U may be a horizontal beam or an oblique beam.
Although the structural member 1T is made of metal, it may be made of reinforced ceramic, reinforced plastic, or the like if sufficient strength is obtained. When a structural member is manufactured from reinforced ceramics or reinforced plastic having insulating properties, the function of an insulator for preventing unnecessary discharge of the structural member is also realized.
The thickness, number, position, and the like of the column 1U are determined so that a predetermined strength is obtained and the flow of the processing target gas is not hindered as much as possible. When sufficient strength is obtained with a cylindrical structural member in a small apparatus, the structural member may not be provided outside the outermost ground electrode 1A in the direction intersecting with the flow of the gas to be processed. If the strength of the structural member outside the space holding the adsorbent 1C is not sufficient, a structural member surrounded by a ground electrode is placed inside the space holding the adsorbent 1C so as not to affect the discharge. May be.
Although the space for holding the adsorbent of the gas processing unit 1 is a rectangular parallelepiped, it may be a shape other than a rectangular parallelepiped, such as a polygonal cylinder, a cylinder, or a shape combining a rectangular parallelepiped.
The above also applies to other embodiments.

Embodiment 15 FIG.
In the fifteenth embodiment, the cross section of the ground electrode 1A surrounding the high-voltage electrode 1D is a regular octagon, and the fourteenth embodiment is modified such that a metal pillar is passed through a rectangular portion surrounded only by the ground electrode 1A. It is.
29 to 31 are views for explaining the structure of the VOC processing apparatus according to the fifteenth embodiment. 29 is a transverse sectional view, FIG. 30 is a longitudinal sectional view in the BB section of FIG. 29, and FIG. 31 is a longitudinal sectional view in the CC section of FIG.
Only differences from FIG. 26 and FIG. 27 in the case of the fourteenth embodiment will be described. The high-voltage electrode 1D and the glass tube 1B surrounding the high-voltage electrode 1D are arranged to be in the same position in adjacent rows, and the cross section of the ground electrode 1A surrounding the high-voltage electrode 1D is a regular octagon. Then, since a quadrangular portion surrounded by the ground electrode 1A is generated, a column 1U is provided as a reinforcing member that causes the surface to function as the ground electrode 1A and structurally strengthens the gas processing unit. The column 1U connects the upper surface and the lower surface of the cylindrical structural member 1T. The column 1U is made of metal having high conductivity and high thermal conductivity. On the inner side of the side surface of the structural member 1T, a ground electrode 1A in which a groove of a right isosceles triangle cross section is provided at a predetermined position of a plate member without a hole by pressing or the like is attached so that the bottom of the groove faces the inside, The cross section of the ground electrode 1A is a regular octagon. The reason for not providing a hole in the ground electrode 1A is to prevent the adsorbent 1C from entering the space between the ground electrode 1A and the structural member 1T. The adsorbent 1C that has entered this space is wasted because it cannot be desorbed by discharge.
Other structures are the same as those in the fourteenth embodiment.
Since the high-voltage electrode 1D and the glass tube 1B surrounding the high-voltage electrode 1D are arranged at the same position in adjacent rows, in FIG. 30, four rows of the high-voltage electrodes 1D and the glass tubes 1B are on the cross section. In FIG. 31, which is a cross section very close to the ground electrode 1A in a direction parallel to the flow of the gas to be processed, a hole is provided in the ground electrode 1A, and the adsorbent 1C is filled on the other side of the hole. I understand that.

The fifteenth embodiment operates in the same manner as the fourteenth embodiment and has the same effect. Furthermore, since the metal column 1U is provided inside the space for holding the adsorbent, a sturdy gas processing unit can be realized as a structure. Since the metal column 1U transfers heat generated by the discharge to the structural member 1T, the discharge current can be increased even if the temperature inside the gas processing unit is the same. In addition, since the cross section of the ground electrode surrounding the high voltage electrode is a regular octagon, the gap length between the high voltage electrode and the ground electrode can be made closer to a constant value than in the case of a square, and discharge can be generated more evenly. .
The column 1U is also used as the ground electrode 1A. However, when the column 1U is made of a material having a low conductivity, the ground electrode 1A may be provided separately from the column 1U.
One ground electrode provided inside the side surface of the structural member 1T may be attached to the structural member one by one. Further, the ground electrode 1A may be a pillar material having a right-angled isosceles triangle section instead of a plate material. This is also true for other embodiments having similar ground electrodes.

Embodiment 16 FIG.
In the sixteenth embodiment, in order to increase the strength and facilitate the assembly, the fifteenth embodiment is modified so that the ground electrode on the side surface parallel to the gas flow is also used as a structural member. .
FIG. 32 is a cross sectional view for explaining the structure of the VOC processing apparatus according to the sixteenth embodiment. Only differences from FIG. 29 which is the case of the fifteenth embodiment will be described. As a reinforcing member for increasing the strength in a direction parallel to the flow of the gas to be processed, the plate material 1W is used instead of the column 1U. The plate material 1W is made of metal having high conductivity and high thermal conductivity. The ground electrode 1A having the same shape as the inner surface of the structural member 1T is attached to both surfaces of the plate 1W. By providing such a ground electrode 1A, the cross section of the ground electrode 1A surrounding the high voltage electrode 1D becomes a regular octagon, and the discharge density can be made nearly uniform. The thickness of the plate 1W is set to a thickness that provides a predetermined structural strength.
Other structures are the same as those of the fifteenth embodiment.

The sixteenth embodiment operates in the same manner as the fifteenth embodiment and has the same effect. Since the reinforcing member is changed from the pillar 1U to the plate member 1W, there is an effect that the labor for attaching the reinforcing member to the structural member 1T is reduced, and the assembly of the gas processing unit becomes easier.
Since the ground electrode 1A for making the cross section of the ground electrode 1A surrounding the high voltage electrode 1D a regular octagon is attached, there is an effect that the discharge becomes nearly uniform. The ground electrode 1A may not be attached to the plate 1W. In that case, although the degree of non-uniform discharge is deteriorated, there is an effect that the manufacturing cost of the gas processing unit 1 can be reduced.
The structural member that structurally reinforces the gas processing unit 1 may be any member as long as a predetermined strength can be obtained.

Embodiment 17. FIG.
The seventeenth embodiment is a case where the fourteenth embodiment is changed so that the processed gas is used for cooling the heat pipe.
FIG. 33 is a plan view for explaining the structure of the VOC processing apparatus according to the seventeenth embodiment. FIG. 34 is a longitudinal sectional view for explaining the structure of the VOC processing apparatus according to the seventeenth embodiment. Only differences from FIG. 24 in the case of the fourteenth embodiment will be described. In order to use the treated gas for cooling the heat pipe 14, a cooling air supply pipe 16 is provided between the air blowing guide 15 </ b> B and the exhaust pipe 9 at the top of each gas processing unit 1. Since air is sent to the heat pipe 14 through the cooling air supply pipe 16 by the exhaust fan 6, there is no cooling fan 15A.
Other structures are the same as those in the fourteenth embodiment.

The seventeenth embodiment operates in the same manner as the fourteenth embodiment and has the same effect. The gas processed by the VOC processing apparatus is clean, and when the room gas is processed, the processed gas at about room temperature is discharged. In this embodiment, since the treated gas is used for cooling the heat pipe, in the VOC processing apparatus installed outdoors, the heat pipe can be cooled with indoor air-conditioned air especially in summer. Therefore, there is an advantage that the cooling efficiency is improved.
Since the temperature of the outside air is lower than the room temperature in the winter season or the like, a structure that can cool the heat pipe with the outside air may be provided when the temperature of the outside air is lower than the room temperature.

Embodiment 18 FIG.
The eighteenth embodiment is a case where the thirteenth embodiment is changed so that the ground electrode 1A and the adsorbent 1C are shared by a plurality of gas processing units 1. FIG. 35 is a diagram for explaining the structure of the VOC processing device according to the eighteenth embodiment. FIG. 35 (a) shows a transverse sectional view, and FIGS. 35 (b) and 35 (c) show longitudinal sectional views, respectively. 35 (b) corresponds to FIG. 35 (a), the BB cross section in FIG. 35 (a) corresponds to FIG. 35 (b), and the CC cross section in FIG. 35 (a) corresponds to FIG. Corresponds to c).

  Only differences from the thirteenth embodiment will be described. In the eighteenth embodiment, a plurality of gas processing units 1 are accommodated in one container 7, and the supply pipe 8 is not necessary. The ground electrode 1A and the adsorbent 1C are shared by all the gas processing units 1.

  Also in the eighteenth embodiment, VOC can be processed efficiently with a small power supply capacity, and the generation of NOx can be reduced. Since the ground electrode 1A and the adsorbent 1C are shared by the gas processing unit 1, it is possible to reduce the size and cost of the apparatus. Only one of the ground electrode 1A and the adsorbent 1C may be used, or the other may be used. The shared use of parts can also be applied to other embodiments, and when applied, the same effect is obtained.

Embodiment 19. FIG.
In this nineteenth embodiment, the ground electrode is rotated. FIG. 36 is a diagram for explaining the structure of the VOC processing device according to the nineteenth embodiment. FIG. 36 (a) shows a transverse sectional view, and FIG. 36 (b) shows a longitudinal sectional view. Note that the AA cross section in FIG. 36 (b) corresponds to FIG. 36 (a), and the BB cross section in FIG. 36 (a) corresponds to FIG. 36 (b).

  A circular mesh-shaped high-voltage electrode 1D and a sector-shaped rotatable ground electrode 1A are arranged in a cylindrical container 7 with a circular honeycomb-shaped adsorbent 1C interposed therebetween. An insulator 7K having a predetermined width is added to the inner surface of the container 7 to prevent unnecessary discharge. The insulator 7K is added to a portion where the high voltage electrode 1D, the adsorbent 1C and the ground electrode 1A are present and a portion having a predetermined margin on both sides thereof. The ground electrode 1A and the high-voltage electrode 1D are made of a highly conductive metal such as molybdenum, tungsten, or stainless steel, or a metal such as platinum, gold, titanium dioxide, or manganese dioxide that has a catalytic action for oxidative decomposition on the surface of these metals. It shall be a coated material.

  The cross section of the adsorbent 1C and the high voltage electrode 1D is made to fill the inside of the container 7. The radius of the ground electrode 1 </ b> A is slightly smaller than the radius of the adsorbent 1 </ b> C and can be rotated in the container 7. The fan-shaped angle α of the ground electrode 1A is a predetermined value corresponding to the number of groups of the gas processing units 1 in Embodiment 1 or the like, which is a value obtained by dividing 360 degrees by α (not necessarily an integer). Like that. The sector shape of the ground electrode 1A may be divided into a plurality. In the case of dividing into a plurality, the sector angle is determined in consideration of the same point.

The gas to be processed flows from left to right in the figure, the high-voltage electrode 1D is on the intake side, and the ground electrode 1A is on the exhaust side. On the exhaust side of the ground electrode 1A, there is a rotating mechanism 10 that rotates the ground electrode 1A. The rotation mechanism 10 includes a rotation shaft 10A, a fixed frame 10B that fixes the rotation shaft 10A to the container 7, a drive shaft 10C that is parallel to the rotation shaft 10A immediately below the rotation shaft 10A, and a container that rotationally drives the drive shaft 10C. 7 and a belt 10E that transmits the rotation of the drive shaft 10C to the rotation shaft 10A.
The rotating mechanism 10 is a discharge control mechanism and a flow rate adjusting mechanism.

  The interval between the ground electrode 1A and the high-voltage electrode 1D is set to an appropriate interval at which discharge can be generated with the applied high voltage. The distance between the ground electrode 1A and the adsorbent 1C is shortened so that the gas flow flowing through the adsorbent 1C in the portion where the ground electrode 1A is downstream is smaller than in the other portions. Specifically, it is 5 mm or less, preferably 1 mm or less. It should be noted that the adsorbent 1C in the portion where the ground electrode 1A is downstream is the portion that is in contact with the discharge.

Next, the operation will be described. A DC positive high voltage is applied to the high-voltage electrode 1C whenever the VOC processing apparatus is in operation. The ground electrode 1A is moved by an angle α every predetermined time of about several minutes. As a result, a discharge occurs between the ground electrode 1A and the portion of the high-voltage electrode 1D that faces the ground electrode. In the adsorbent 1C that is in contact with the discharge, the VOC is desorbed, and the desorbed VOC is discharged into water and carbon dioxide by the discharge. Decomposed into carbon. A portion of the adsorbent 1C not touching the discharge adsorbs VOC. This means that a part of the adsorbent 1C comes into contact with the discharge in order. It should be noted that the time interval for moving the ground electrode 1A is sufficient to decompose and desorb the VOC with the adsorbent 1C in contact with the discharge, and the time interval until the discharge is touched is longer than the time for breakthrough. It decides so that adsorbent 1C which becomes long may not occur.
In the nineteenth embodiment as well, VOC can be processed efficiently with a small power supply capacity. Furthermore, there is a feature that piping and valves for flowing gas are unnecessary.

  Since the distance between the ground electrode 1A and the adsorbent 1C is shortened, the gas flow is reduced in the portion of the adsorbent 1C where discharge occurs, and the generation of NOx can also be reduced. Further, since only one high-pressure electrode 1D, one adsorbent 1C, and one container 7 are required, and a water cooling device and a gas flow adjusting valve are not necessary, there is an advantage that it can be manufactured at low cost.

  Although the rotation of the ground electrode 1A is intermittently rotated at the same angle as the sector angle α of the ground electrode 1A at a time, it may be rotated continuously. In the case of intermittent rotation, the one rotation angle β may not be α. The movement interval may be shortened at an angle smaller than α, or may be moved at a predetermined interval at an angle larger than α. The movement at an angle larger than α desorbs the part of the adsorbent that is separated from the previously desorbed part, so that desorption can be performed more efficiently.

In order to prevent the adsorbent parts from desorbing in order and generating an adsorbent part that cannot be desorbed, or desorbing parts that have not been desorbed yet to occur Rotate 1A. Here, the part of the adsorbent that cannot be desorbed is generated, for example, when α = 30 degrees and β = 120 degrees. In this case, only three adsorbents of 0 ° to 30 °, 120 ° to 150 °, and 240 ° to 270 ° are desorbed, and the other portions of the adsorbent cannot be desorbed. The case where the desorbed portion is desorbed even though there is a portion that has not been desorbed is, for example, when α = 30 degrees and β = 125 degrees. In this case, the ranges of 0 degrees to 30 degrees, 125 degrees to 155 degrees, 250 degrees to 280 degrees, 15 degrees to 45 degrees are desorbed, and the angle range of 240 degrees is not yet desorbed. Degrees to 30 degrees will be desorbed for the second time. Even when there are a plurality of ground electrodes 1A, the ground electrode 1A is rotated while paying attention to the same point.
Although the efficiency is lowered, it may be allowed that a portion of the adsorbent that cannot be desorbed is generated, or that a desorbed portion is desorbed while there is a portion that has not been desorbed.

  The shape of the electrode may not be a sector, but may be a rectangle or a combination of a sector and a rectangle. When combining a sector and a rectangle, a portion with a large radius is preferably a sector, and a portion with a small radius is preferably a rectangle. Furthermore, the electrode may have any shape as long as it covers a part of the adsorbent 1C and can cover most of the adsorbent when the electrode rotates once.

  Although a positive high voltage is applied to the high-voltage electrode 1D, a negative DC high voltage may be applied. A dielectric may be placed on at least one discharge surface of either the ground electrode 1A or the high-voltage electrode 1D to apply an AC voltage. The application of an AC voltage tends to provide a stable discharge with higher power. In the case of using a dielectric, it is effective that the ground electrode 1A in FIG. 36 has a structure in which a metal electrode is arranged in a glass tube, that is, the structure of the high-voltage electrode 1D in the first embodiment. Alternatively, the high voltage electrode 1D in FIG. 36 may have a structure in which a plurality of glass tubes in which metal electrodes are placed are arranged. Glass is an example of a dielectric, and other dielectrics may be used. A metal electrode may be coated with a dielectric.

The rotating small electrode may be the high-voltage electrode 1D instead of the ground electrode 1A. When the high-voltage electrode 1D is smaller than the ground electrode 1A, the discharge stability is increased and a more practical device is obtained. However, when moving an electrode to which a high voltage is applied, it is necessary to consider insulation and the structure becomes complicated. Therefore, depending on the application, it can be determined whether the rotating electrode is the ground electrode 1A or the high-voltage electrode 1D. That's fine.
Although the cooling device is omitted in the nineteenth embodiment, a device for cooling the electrodes may be provided by comprehensively judging the cost and performance. It should be noted that cooling the electrode is effective in stably discharging with high power.

  In the case of a honeycomb-shaped adsorbent, the gas flows linearly through the gas passage inside the adsorbent, so that the gas flow rate can be greatly reduced by generating a slight pressure loss at the inlet or outlet of the gas passage. it can. In other words, in the case of the honeycomb shape, when the distance between the ground electrode 1A and the adsorbent 1C is the same, the effect of reducing the gas flow rate, that is, the effect of reducing the amount of NOx generated is greater. Even if it is not honeycomb-shaped, if the interval is made sufficiently small, the required NOx generation amount can be reduced. Note that the interval between the ground electrode 1 </ b> A and the adsorbent 1 </ b> C may be increased when allowing the NOx generation amount not to be reduced or taking another measure to reduce the NOx generation amount.

In the nineteenth embodiment, the ground electrode 1A is rotated, but it may be translated. Although the high voltage electrode 1D is not moved as a mesh, the high voltage electrode 1D may have the same shape as the ground electrode 1A, and the ground electrode 1A and the high voltage electrode 1D may be moved together. The adsorbent may be moved while the electrode is fixed. When the adsorbent is moved, if the adsorbent is rotated in a circular shape, there is little waste in space arrangement. If a discharge occurs between a pair of electrodes in contact with some adsorbent and at least one of the electrodes or adsorbent moves, so that most adsorbent can touch the discharge, Any shape and moving method may be used for the electrode and the adsorbent.
The above also applies to other embodiments having the same configuration.

Embodiment 20. FIG.
The twentieth embodiment is another case in which the ground electrode is rotated. FIG. 37 shows a diagram for explaining the structure of the VOC processing device according to the twentieth embodiment. FIG. 37 (a) shows a transverse sectional view, and FIG. 37 (b) shows a longitudinal sectional view. In addition, the AA cross section in FIG. 37 (b) corresponds to FIG. 37 (a), and the BB cross section in FIG. 37 (a) corresponds to FIG. 37 (b).
Only differences from the embodiment 19 in FIG. 36 will be described. The ground electrode 1A is linear, and there is a baffle plate 1M on the downstream side of the gas flow of the ground electrode 1A. The width of the baffle plate 1M is set to a length that is necessary and sufficient to conceal the honeycomb gas passage in a range that is in contact with the discharge. There are three sets of the ground electrode 1A and the baffle plate 1M at an angular interval of 120 degrees. Other structures are the same as those in the nineteenth embodiment.

  Also in this twentieth embodiment, VOC can be efficiently processed with a small power source capacity, generation of NOx can be reduced, the number of parts can be reduced, and manufacturing can be performed at low cost. Furthermore, since the ground electrode 1A is linear, the electric field strength near the electrode increases and discharge tends to occur.

  The width of the baffle plate 1M covers the portion of the adsorbent that touches the discharge, and does not cover the portion of the adsorbent that does not touch the discharge. When the baffle plate 1M covers the part of the adsorbent that is not in contact with the discharge and stops the gas flow, the adsorbent does not adsorb or desorb the VOC at that part, and the efficiency of the VOC processing apparatus decreases. In the case of a honeycomb-shaped adsorbent, the cross-sectional area of one gas passage is small, so if one gas passage can be covered, the gas can be prevented from flowing into the gas passage without covering the outside of the gas passage. . Therefore, in the case of the honeycomb shape, an adsorbent that does not adsorb or desorb VOC is minimized. Therefore, it is possible to reduce the generation of NOx without reducing the efficiency of the VOC processing apparatus. When the adsorbent is not in a honeycomb shape, measures such as increasing the baffle plate 1M or shortening the interval between the baffle plate 1M and the adsorbent are taken. The baffle plate 1M may not be plate-shaped. In any case, the baffle plate 1M has a shape and size necessary and sufficient to reduce the gas flow to the adsorbent in contact with the discharge. Note that the baffle plate 1M may not be provided when the NOx generation amount is allowed not to be reduced or when another measure for reducing the NOx generation amount is taken.

  If only the ground electrode 1A is linear, the proportion of the adsorbent part that is in contact with the discharge decreases, so the ground electrode 1A is made plural. The shape, size, and number of the moving electrode or baffle plate 1M are determined comprehensively in consideration of the extent of the adsorbent that is in contact with the discharge, the extent to which the gas flow rate is reduced, and the degree thereof. Decide.

Embodiment 21. FIG.
In the twenty-first embodiment, the gas processing unit 1 to be discharged is supplied with a special gas mixture in which an oxygen concentration is increased and an inert gas is mixed instead of nitrogen. FIG. 38 is a system block diagram of the VOC processing device in the twenty-first embodiment.

  The VOC processing apparatus according to the twenty-first embodiment adds the following for processing a special gas mixture to the first embodiment. (1) A special compound gas supply mechanism 11A which is a gas supply mechanism for supplying a special compound gas. (2) A pipe 11B between the special combination gas supply mechanism 11A and the gas processing unit 1. (3) A valve 11C that adjusts the flow rate of the special combination gas flowing through the pipe 11B. (4) A valve 11D that adjusts whether or not the exhaust gas of the gas processing unit 1 flows toward the exhaust fan 6. (5) A special combination gas recovery / regeneration mechanism 11E that recovers and regenerates the special combination gas from the gas processing unit 1. (6) A pipe 11F connecting the gas processing unit 1 and the special combination gas recovery / regeneration mechanism 11E. (7) A valve 11G that adjusts the flow rate of the pipe 11F. (8) An exhaust fan 11H located in front of the exhaust port inside the pipe 11F. (9) A pipe 11J connecting the special combination gas recovery / regeneration mechanism 11E and the special combination gas supply mechanism 11A.

The special gas mixture is a mixture of an inert gas and oxygen at a predetermined ratio so that the nitrogen content is minimized. The composition of the special gas mixture is determined by comprehensively judging the performance improvement effect and cost.
The special blended gas supply mechanism 11A is a mechanism for supplying a special blended gas in which oxygen and an inert gas are blended at a predetermined ratio. The special combination gas recovery / regeneration mechanism 11E is a mechanism that removes components other than oxygen and inert gas from the recovered special combination gas and regenerates them so that they can be used again as a special combination gas. The regenerated special compound gas is supplied to the gas processing unit 1 by adding oxygen or an inert gas so as to obtain a predetermined compound by the special compound gas supply mechanism 11A.

  One gas processing unit 1 includes a sealable compartment, and has a valve 5A and a valve 11C on the intake side, and a valve 11D and a valve 11G on the exhaust side. Depending on the open / closed state of these valves and the presence / absence of application of a high voltage, the gas processing unit 1 takes the following four types of operation states. The operation state A is a state in which the adsorbent adsorbs VOC in the processing target gas. The operation state B is a state in which the VOC is decomposed by desorbing the adsorbent that has adsorbed the VOC. On the other hand, the operation state C and the operation state D are transitional states during the state transition. The operation state C is taken during the transition from the operation state A to the operation state B, and the operation state D is taken while returning from the operation state B to the operation state A.

  FIG. 39 shows a diagram for explaining each operation state. The special gas mixture is expressed in a thin pear ground. The operation state A is a state in which the valve 5A and the valve 11D are open, the valve 11C and the valve 11G are closed, and the gas to be processed flows through the gas processing unit 1 as shown in FIG. 39 (a). No high voltage is applied to the high-voltage electrode 1D, and no discharge is generated. The operation state C is a state changed from the operation state A so that the valve 5A is closed, the valve 11C is opened, and the valve 11D is closed and the valve 11G is opened, as shown in FIG. 39 (b). In the operation state A, the gas processing unit 1 is filled with the gas to be processed, but the state in the middle of switching to the special blended gas is the operation state C. When the inside of the gas processing unit 1 is filled with the special compound gas, the valve 11C and the valve 11G are closed, and a high voltage is applied to the high voltage electrode 1D to generate a discharge. Thus, the operation state B shown in FIG. In the operation state B, either the valve 11C or the valve 11G may be open. Furthermore, although the consumption amount of the special compound gas increases, both the valve 11C and the valve 11G may be opened in the operation state B.

  If the high voltage is not applied to the high voltage electrode 1D from the operation state B and the valve 5A and the valve 11G are opened, the operation state D shown in FIG. In the operation state D, the special gas mixture filled in the gas processing unit 1 in the operation state B is replaced with the gas to be processed. When the special gas mixture is exhausted from the inside of the gas processing unit 1, the valve 11G is closed and the valve 11D is opened to return to the operation state A. These valves are controlled by the flow rate adjusting mechanism 5. In addition, you may make it control the valve | bulb regarding special compound gas from other mechanisms, such as special compound gas supply mechanism 11A and special compound gas collection | recovery reproduction | regeneration mechanism 11E.

  FIG. 40 is a diagram for explaining a sequence of operation states taken by the group of gas processing units 1 in the VOC processing apparatus. In FIG. 40, the operation state A, the operation state C, the operation state D, and the operation state B are arranged in order from the bottom. There are operating states from phase 1A to phase 6B. Phase 1A, phase 1B, phase 2A, phase 2B, phase 3A,..., Phase 6A, phase 6B are changed in order, and the phase 6B is repeatedly returned to phase 1A. In phase nB, group n is in operating state B and the rest is in operating state A. In phase nA, group n-1 is in operating state D, group n is in operating state C, and the remaining groups are in operating state A. Since the group n-1 is set to the operating state C at the same time as the group n-1 is set to the operating state D, it is possible to shorten the time required for the group n-1 to be the operating state A and the group n to be the operating state B. it can.

  Although time is required, group n-1 may be set to operating state A and then group n may be set to operating state C. In addition, group n may be set to operating state C after group n-1 is set to operating state D, and group n-1 may be set to operating state D after group n is set to operating state C. In these cases, strictly speaking, the number of phases becomes larger. In the following, phase is not particularly mentioned, but when the sequence of operation states taken for each group is changed, the number of phases is also changed in accordance with the sequence.

Even in the twenty-first embodiment, VOC can be efficiently processed with a small power source capacity, and discharge is generated in a special compound gas not containing nitrogen, so that almost no NOx is generated. Furthermore, if the oxygen concentration in the special gas mixture is increased, the generation probability of active species such as oxygen atoms and ozone is increased, and the decomposition efficiency of VOC is improved. If the special compound gas contains oxygen and has either a higher oxygen concentration than the atmosphere or a lower nitrogen concentration than the atmosphere, the generation of NOx will increase the VOC decomposition efficiency. Has any effect of reducing. An inert gas is blended in place of nitrogen. However, any gas may be used as long as it does not react with oxygen even if it is not an inert gas or does not generate harmful substances even when reacted.
The twenty-first embodiment is modified based on the first embodiment to use a special blend gas, but may be based on another embodiment.

  In the twenty-first embodiment, the valve is opened and closed so as not to leak the special blended gas to the outside as much as possible. When importance is attached to the fact that the gas to be treated is not mixed in the special gas mixture to be recovered, when the operation state A changes from the operation state A to the operation state C, the valve 11D and the valve 11G are not opened and closed. When changing to the operating state B, only the valve 11D is closed. And the timing which returns to the operation state A from the operation state D is advanced, and it returns to the operation state A before the special mixing | blending gas in the gas processing unit 1 is discharged | emitted completely. In addition, the order which operates these valves may be other than this. A plurality of valves are operated at the same time, but only one valve may be operated at a time. Further, the start and end timings of the discharge may be changed. In addition, by changing the timing of control and discharge start and end of each bulb, the transient operation state between the operation state A and the operation state B is changed, and the operation states other than the operation state C and the operation state D are changed. Will take. However, when an operation state in which a plurality of groups are discharged at the same time is taken, it is necessary to take measures to prevent the power consumed by the discharge from exceeding the power supply capacity. If measures to prevent the power consumed by the discharge from exceeding the power supply capacity cannot be implemented, the plurality of groups are not discharged at the same time.

  The time for the operation state C and the time for the operation state D are the same, but may be different. In another case, the start timing of the operation state C and the operation state D may be the same, or the end timing may be the same. Furthermore, the start and end timings of the operation state C may be different from the start and end timings of the operation state D.

  In the twenty-first embodiment, the recovered special combination gas is regenerated and reused as the special combination gas. However, it may be recovered and not reused. Further, the special blend gas may not be recovered. Whether or not to recover or regenerate the special compound gas depends on the composition of the special compound gas, the degree of performance improvement by using the special compound gas, the cost of the special compound gas, the cost of equipment required for recovery and regeneration, Considering the demerits when not collecting, make a comprehensive decision.

Embodiment 22. FIG.
In the twenty-second embodiment, the gas remaining in the gas processing unit 1 (referred to as a gas after desorption) after the flow of the gas to be processed is stopped and the VOC is desorbed by discharge is returned to the intake side by the treated gas. It is a thing. FIG. 41 is a system block diagram of the VOC processing device in the twenty-second embodiment.
The VOC processing apparatus according to the twenty-second embodiment adds the following to the first embodiment as a gas return mechanism for returning the desorbed gas to the intake side. (1) An exhaust fan 11H for returning the processed gas to the intake pipe 8 through the inside of the gas processing unit 1. (2) Pipe 11F connecting the gas processing unit 1 and the exhaust fan 11H (3) Valve 11G for adjusting the flow rate of the pipe 11F (4) Valve for adjusting whether the exhaust gas from the gas processing unit 1 flows toward the exhaust fan 6 11D.

  One gas processing unit 1 is a sealed chamber, and has a valve 5A on the intake side and a valve 11D and a valve 11G on the exhaust side. Depending on the open / closed state of these valves and the presence or absence of application of a high voltage, the gas processing unit 1 takes the following three types of operating states. The operation state A is a state in which the adsorbent adsorbs VOC in the processing target gas. The operation state B is a state where the VOC is decomposed by desorbing the adsorbent adsorbing the VOC by discharge. The operation state D is a state in which the desorbed gas is returned to the intake side by the processed gas. The operation state D is a transient state temporarily taken while returning from the operation state B to the operation state A.

  FIG. 42 shows a diagram for explaining each operation state. In addition, the gas after desorption is expressed as a thin pear ground. The operation state A is a state in which the valve 5A and the valve 11D are open, the valve 11G is closed, and the gas to be processed flows through the gas processing unit 1 as shown in FIG. No high voltage is applied to the high-voltage electrode 1D, and no discharge is generated. In the operation state B, as shown in FIG. 42 (b), the valve 5A, the valve 11D, and the valve 11G are closed and a high voltage is applied to the high voltage electrode 1D to generate a discharge. The valve 5A may be opened. If the high voltage is not applied to the high voltage electrode 1D from the operation state B and the valve 5A and the valve 11G are opened, the operation state D shown in FIG. When the valve 11D is opened and the valve 11G is closed from the operation state D, the operation state A is restored. These valves are controlled by the flow rate adjusting mechanism 5. In addition, you may make it control the valve regarding the return of the gas after desorption to the intake side from another newly provided mechanism.

  In the operation state D, the desorbed gas containing the discharge by-product filled in the gas processing unit 1 in the operation state B is sent to the supply pipe 8 by the processed gas, and the gas processing in the other operation state A is performed. By-products are adsorbed in unit 1. The direction in which the gas flows in the operation state D is opposite to the direction in which the gas to be processed flows in the operation state A in which VOC is adsorbed. The period in which the operating state D is taken is a predetermined period during which all the desorbed gas can be returned to the intake pipe 8. The destination for returning the gas after desorption may be anywhere as long as it is not discharged to the outside on the intake side, even if it is not the intake pipe 8.

FIG. 43 shows a diagram for explaining the sequence of operation states taken by the group of gas processing units 1 in the VOC processing apparatus. In FIG. 43, the operation state A, the operation state D, and the operation state B are arranged in this order from the bottom. There are operating states from phase 1A to phase 6B. Phase 1A, phase 1B, phase 2A, phase 2B, phase 3A,..., Phase 6A, phase 6B are changed in order, and the phase 6B is repeatedly returned to phase 1A. In phase nB, group n is in operating state B and the rest is in operating state A. In phase nA, group n-1 is in operating state D and the remaining groups are in operating state A. The pattern of change in the operating state that each group described above takes is called pattern A.
Here, in the phase nA, the group n-1 may be in the operation state D, the group n may be in the operation state B, and the remaining groups may be in the operation state A. Such a change pattern of the operation state taken by each group is referred to as a pattern B. In pattern B, one group is always in operation state B, and the number of groups taking operation state A in phase nA is one less than in pattern A. If the number of groups is sufficiently large, it is not a problem that the number of groups taking the operating state A is one less than in the case of pattern A. A situation that cannot be done does not occur.

Also in the twenty-second embodiment, VOC can be processed efficiently with a small power supply capacity, and the generation of NOx can be reduced. Further, since the by-product is adsorbed and removed by the adsorbent 1C after returning the desorbed gas containing the by-product such as NOx generated by the discharge to the supply pipe, the by-product such as NOx discharged as the treated gas is Very little.
Although the twenty-second embodiment has been modified to include a gas return mechanism that returns the processed gas to the supply pipe based on the first embodiment, another embodiment may be used.

  Even if the gas processing unit 1 is divided into a plurality of groups and a VOC processing apparatus that performs desorption processing of the adsorbent for each group is provided, a discharge amount of by-products such as NOx can be reduced by providing a gas return mechanism. There is an effect. In the operation state D when the VOC processing apparatus is not a VOC processing apparatus that performs adsorbent desorption processing for each group, outside air or the like is sent from the valve 11D into the gas processing unit 1 filled with gas after desorption to return the desorption gas to the intake side. . In addition, in the case of the VOC processing apparatus that performs desorption processing of the adsorbent for each group, the processed gas can be used for returning the gas after desorption to the intake side, and the gas returned to the intake side is immediately replaced with another gas. There is an advantage that adsorption processing can be performed in the processing unit.

By returning the gas to the intake side even when the discharge occurs, it is possible to prevent discharge of by-products such as NOx generated by the discharge. However, when the flow rate of the gas flowing in the opposite direction when the discharge is generated is the same as or larger than the flow rate when the discharge is not being generated, there is no effect of reducing the amount of NOx generated by the discharge. When the flow rate of the gas flowing in the reverse direction when the discharge is generated is smaller than the flow rate when the discharge is not being generated, the reduction amount of NOx generated by the discharge increases as the degree of decrease increases.
When returning the gas to the intake side even when a discharge occurs, the amount of by-products remaining in the gas processing unit 1 is small, so the predetermined time for returning the gas to the intake side after the occurrence of discharge may be shortened.
The above also applies to other embodiments.

Embodiment 23. FIG.
The VOC processing apparatus according to the twenty-third embodiment is based on the first embodiment, measures the VOC concentration in the gas to be processed, and adjusts the power consumption of discharge according to the VOC concentration. is there. FIG. 44 is a system block diagram of the VOC processing device in the twenty-third embodiment. The following points are different from FIG. 1 which is the case of the first embodiment. A VOC concentration sensor 12 that measures the VOC concentration in the gas to be processed is added immediately after the filter 4. Instead of the voltage switching control device 3 and the flow rate adjustment mechanism 5, there is a discharge power control mechanism 13 which is a discharge control mechanism. The discharge power control mechanism 13 calculates the amount of VOC adsorbed by the adsorbent 1C from the VOC concentration measured by the VOC concentration sensor 12 (referred to as VOC adsorption amount), and according to the VOC adsorption amount at the start of discharge, VOC. The voltage switching element 3A and the bulb 5A are controlled so that the power consumption of the discharge necessary for disassembling is minimized. Other configurations are the same as those of the first embodiment.

Next, the operation will be described. In the twenty-third embodiment, the gas processing unit 1 takes the following operation state E in addition to the same operation state A and operation state B as in the first embodiment. The operation state E is a state in which the valve 5A is closed and no high voltage is applied to the high voltage electrode 1D. In the operation state E, when the desorption of the adsorbent 1C in the operation state B is completed when the VOC adsorption amount is small, the gas processing unit 1 of the next group becomes the operation state B and this group becomes the operation state A. It is the operation state to take between.
The reason why the operation state E is necessary will be described. When the VOC concentration is low, the time for disassembling the VOC in the operation state B is shortened. If the operation state B is finished in a certain group without taking the operation state E, and the operation state B is taken in the next group, the operation cycle of the VOC processing device changes according to the VOC concentration. Become. When the VOC concentration is low, the processing cycle is shortened, and the adsorbent is decomposed by discharge before sufficiently adsorbing the VOC, so that the VOC decomposition efficiency decreases. The operation state E is necessary so that the cycle of processing is not less than a predetermined length so as not to lower the decomposition efficiency when the VOC concentration is low.

  FIG. 45 illustrates a relationship between the VOC concentration in the gas to be processed and the VOC adsorption amount of the adsorbent 1C in each group of the gas processing unit 1. FIG. 45 (a) shows the VOC concentration in the gas to be processed, and FIG. 45 (b-g) shows the VOC adsorption amount of the adsorbent 1C in the gas processing units 1 of group 1 to group 6. The VOC concentration in the gas to be processed is expressed as a percentage of the assumed maximum concentration. The VOC adsorption amount of the adsorbent 1C is expressed as a percentage of the amount of VOC that is adsorbed in one cycle when the processing target gas having the maximum concentration assumed continues. Here, it is assumed that in the region where the adsorbent 1C does not break through, all the VOCs in the gas to be processed that the adsorbent 1C touches can be adsorbed. This means that if the gas flow rate is constant over time, the VOC adsorption amount of the adsorbent 1C can be calculated by multiplying the time integral of the VOC concentration by the gas flow rate per unit time. It is assumed that the amount of VOC that can be decomposed is proportional to the power consumption. Actually, the adsorption of VOC depends on other conditions such as the amount of VOC adsorption. The rate at which VOC is decomposed also depends on the amount of VOC adsorption.

  In FIG. 45 (a), it is assumed that the VOC concentration was initially about 100% of the maximum amount assumed, but changed to 50% from the middle. It is assumed that the VOC processing apparatus starts operation from the time point of time zero, and the adsorbent does not adsorb VOC in all the gas processing units 1 at the start of the operation. The amount of VOC adsorbed by the adsorbent is the gas per unit time in the time integration of the VOC concentration of the gas to be processed from the time when it comes into contact with the gas to be processed after desorption is completed, based on the premise described above. The flow rate is applied. Therefore, the discharge power control mechanism 13 calculates the VOC adsorption amount at the start time of the operation state B for each group of the gas processing units 1. Further, the discharge power control mechanism 13 determines the duration of the operation state B according to the VOC adsorption amount, and controls the on / off of the voltage switching element 3A so that the duration of the operation state B becomes the determined time. After the operation state B is completed, the operation state E is set.

Control is performed so that the time taken for the operation state B or the operation state E is a predetermined time T (10 minutes in FIG. 45). For a predetermined time T, when the group of the gas processing unit 1 is N, when the gas to be processed having a VOC concentration of 100% continues for a time of T × (N−1), the adsorbent has a VOC of 100%. It is the time to adsorb and needs to be longer than the time required for the VOC decomposition process.
In group 1, since the VOC adsorption amount is zero at time 0, operation state B is not taken and operation state E is entered. It can be seen that as the VOC adsorption amount increases, the time taken for the operation state B becomes longer. Further, it can be seen that after the VOC adsorption amount becomes zero, the operation state E is taken instead of the operation state B.

Also in the twenty-third embodiment, VOC can be processed efficiently with a small power source capacity, generation of NOx can be reduced, and power consumption required for decomposition of VOC can be reduced to the minimum necessary. In order to reliably decompose the VOC, the time taken for the operation state B may be slightly longer than the minimum necessary time. Even in such a case, there is an effect that power consumption can be reduced by eliminating wasteful discharge after the VOC decomposition process is completed.
In the twenty-third embodiment, the discharge time is changed with the applied voltage and the discharge current and thus the power consumption constant, but the amount of VOC adsorbed by controlling the high voltage generator 2 with the discharge time constant. Depending on the above, either or both of the applied voltage and the discharge current and thus the power consumption of the discharge may be changed. Furthermore, the discharge time may be changed together with either or both of the applied voltage and the discharge current. Any method may be used as long as the power consumption for desorbing and decomposing the VOC can be reduced. In addition, it is desirable that the power consumption is as close as possible to the minimum necessary within the range where VOC can be reliably decomposed.

In this Embodiment 23, it is assumed that the speed at which the adsorbent 1C adsorbs VOC is proportional to the VOC concentration, and the speed at which the adsorbent 1C desorbs VOC is proportional to the power consumption. You may make it calculate by a strict method. Use a reasonable formula that suits your purpose.
The time taken for the operation state B or the operation state E is set to a predetermined value, but may be variable. As an example of making it variable, it is conceivable that the VOC adsorption amount of the gas processing unit 1 of the group that will be in the operation state B next becomes a predetermined value (for example, 75%) or more. In the case of making variable, when the situation where the VOC concentration is high continues, the operation state E is not taken after the operation state B, and the gas processing unit 1 of the next group is set to the operation state B. Also good.

By making the time taken for the operation state B or the operation state E variable, even when the VOC concentration is low, the decomposition can be performed after the adsorbent has sufficiently adsorbed the VOC, so that the VOC can be decomposed efficiently. However, when waiting for sufficient adsorption of VOC, it is considered that the adsorbent does not break through even if the VOC concentration suddenly increases and continues to be high. More specifically, even if the VOC concentration suddenly increases to 100% and continues thereafter at 100%, until the operation state B in the next group of gas processing units 1 is completed, The start time of the operation state B in the next group of gas processing units 1 is controlled so that the subsequent groups of gas processing units 1 do not break through.
The applied voltage, discharge current, and discharge duration in operation state B may be fixed, and only the time in operation state E may be variable.

Instead of the operation state E after the operation state B, the operation state A may be taken. In this case, the number of groups in which the operating state A is taken is different between the phase 0 in which all groups take the operating state A and the phase in which one group takes the operating state B or the operating state E. If the number of groups having the operation state A is different, the gas flow rate per gas processing unit 1 changes if the flow rate of the processing target gas is the same. When the gas flow rate changes, the VOC adsorption amount is calculated by integrating the VOC concentration with the gas flow rate. In addition, even if the number of groups taking the operation state A changes, the total amount of gas flow may be controlled so as not to change the gas flow rate per gas processing unit 1.
The twenty-third embodiment is based on the first embodiment, but may be based on other embodiments.
The above also applies to other embodiments using a VOC concentration sensor.

1: Gas processing unit 1A: Ground electrode 1B: Glass tube (dielectric)
1C: Adsorbent (adsorbent)
1D: High voltage electrode 1E: High voltage lead 1F: Fuse 1G: Support material 1H: High voltage lead 1J: Dielectric film 1K: Exhaust port 1L: Shield plate 1M: Baffle plate 1N: Cooling water supply port 1P: Cooling water discharge port 1Q: Feed layer 1R: Insulating layer 1S: Insulator 1T: Structural member 1U: Column (reinforcing member)
1V: Insulator 1W: Plate material (reinforcing member)
2: High voltage generator 3: Voltage switching controller (discharge control mechanism)
3A: Voltage switching element 4: Filter 5: Flow rate adjusting mechanism 5A: Valve 6: Exhaust fan 7: Container 7A: Intake port 7B: Exhaust port 7C: High-pressure line introduction port 7D: Cavity 7E: Bulkhead 7F: Through hole 7G: Cooling Water supply port 7H: Cooling water discharge port 7J: Cooling water passage 7K: Insulator 8: Supply piping 9: Exhaust piping 10: Rotating mechanism (discharge control mechanism, flow rate adjusting mechanism)
10A: Rotating shaft 10B: Fixed frame 10C: Motor 10D: Disk 10E: Belt 11A: Special blend gas supply mechanism (gas supply mechanism)
11B: Pipe 11C: Valve 11D: Valve 11E: Special blended gas recovery and regeneration mechanism 11F: Pipe 11G: Valve 11H: Exhaust fan 11J: Pipe 12: VOC concentration sensor 13: Discharge power control mechanism (discharge control mechanism, flow rate adjustment mechanism)
14: Heat pipe (electrode cooling mechanism)
14A: Refrigerant 14B: Radiator 15A: Cooling fan 15B: Blower guide 15C: Filter 16: Cooling air supply pipe

Claims (5)

An adsorbent that touches the gas to be treated and adsorbs volatile organic compounds;
A pair of electrodes consisting of a ground electrode and a high-voltage electrode , which are arranged with the adsorber sandwiched between them and an AC voltage is applied to generate a discharge;
A solid dielectric disposed between the pair of electrodes and between the adsorbent and the high voltage electrode ;
Said provided between the dielectric and the high voltage electrode, wherein the dielectric and the high voltage electrode you coupled thermally and electrically feeding layer,
The AC voltage is applied between the electrode pair to generate the discharge that touches the adsorbent and the voltage is not applied between the electrode pair and the adsorbent is volatile organic. A switching element for switching between the second state for adsorbing the compound;
The volatile organic compound processing apparatus provided with the electrode cooling mechanism which cools the said high voltage electrode thermally and electrically couple | bonded with the said dielectric material and the said electric power feeding layer in the said 1st state and the said 2nd state. The volatile organic compound processing apparatus according to claim 1, wherein the power feeding layer has flexibility. An electrode having a space in which at least one of the electrodes of the pair of electrodes has a sealed space therein, a refrigerant sealed in the space in the electrode, and a heat radiating plate for removing heat from the vapor of the refrigerant The volatile organic compound processing apparatus according to claim 1, further comprising a cooling mechanism. The volatile organic compound processing apparatus according to claim 3, wherein the heat radiating plate and the electrode cooled by the heat radiating plate are insulated. The volatile organic compound processing apparatus according to claim 3, wherein the heat radiating plate is cooled by a processed gas after the volatile organic compound is adsorbed by the adsorbent.

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