JP5218507B2 - Sputtering equipment - Google Patents

Description

  The present invention relates to a sputtering apparatus that performs sputtering by a magnetron sputtering method with a surface of a processing substrate on which a film is formed and a target facing each other in parallel.

In recent years, progress toward an information society has been remarkable, and the use of display devices has been diversified, and various display devices have been developed and put into practical use.
In particular, liquid crystal display devices have been widely used in place of CRT (Cathode-Ray Tube, CRT).
In a liquid crystal panel for color display for a liquid crystal display device, light from a backlight is displayed through a colored layer of each color, but the light passing through the colored layer of each color is liquid crystal for each pixel. Are controlled on and off as switching elements.
A transparent conductive ITO film (indium oxide doped with tin) has been conventionally used as a material for a control electrode for on-off control using a liquid crystal as a switching element for each pixel.
As a method for forming an ITO film, a method for forming a desired ITO film by sputtering an ITO on a substrate under a predetermined sputtering condition using an ITO sintered body as a target is disclosed in JP-A-6-24826. It is known in Japanese Patent Publication (Patent Document 1), Japanese Patent Application Laid-Open No. 6-247765 (Patent Document 2), and the like.

Impositional production is carried out from the viewpoint of productivity improvement and cost reduction, but there is a strong demand for enlargement of the transparent glass substrate used for this, and recently, the G6 generation (1800 mm x 1500 mm size) ) Mass production with large glass substrates is becoming a reality.
And, from the aspect of productivity, in-line deposition of the ITO film on the processing substrate using such a large glass substrate is performed in-line, as shown in FIG. An inline ITO sputter deposition apparatus has also been proposed.
In the sputtering apparatus shown here, as shown in FIG. 6 (b), a processing substrate 863 having a large glass substrate as a base substrate is mounted on a carrier 860 and placed in a vertical direction 892, in-line. Then, sputtering is performed while being conveyed, and an ITO film for electrodes is formed on one surface side of the processing substrate 763 by sputtering.
Briefly, the processing substrate 863 is put into the loading chamber 811, passed through the preliminary chamber 812, put into the first sputter chamber 883, sputtered while being transported, and carried into the rotation processing unit 820, where Each carrier is rotated 180 degrees by the rotating unit, the direction is changed, and the carrier is put into the second sputtering chamber 833 and sputtered while being conveyed.
Then, after sputtering, the material is unloaded through the preliminary chamber 832 and the unloading chamber 831.
Here, as illustrated in FIG. 6B, in a state where the processing substrate 863 is placed on a support member having a frame body 861 for holding the processing substrate 863, which is called a carrier (also referred to as a substrate holder) 860. The carrier 860 is conveyed in a standing state.
The carrier 860 includes a processing substrate holding portion 101 that holds the processing substrate 863 in order by fitting the processing substrate 863 and the back plate 861 into the frame 861, and the processing substrate 863 is arranged along the vertical direction 892. The carrier 860 is fitted into the processing substrate holding part 101 in a state where it stands upright.
Then, as shown in FIG. 6A, the processing substrate 863 is mounted on the carrier 860 together with the processing substrate holding unit 101, transported in the horizontal direction 891, and stood along the vertical direction 892. Sputtering is performed parallel to 871 and facing.
In FIG. 6A, a dotted arrow indicates the conveyance direction of the carrier 860.
Although not shown, the sputtering method here is designed so that the magnetic field is closed between the outer magnetic pole and the inner magnetic pole on the back side of the target 871 (the side opposite to the processing substrate 863 side). Is of a magnetron sputtering method, so that it exists only in the vicinity of the target 871.
An example of a large-size processing substrate is a color filter-formed substrate in which a colored layer of each color is formed as a color filter (hereinafter also referred to as CF) on one surface side of a large-size transparent glass substrate. An ITO film for electrodes is formed on the CF forming surface side of the substrate.

In the carrier 860 shown in FIG. 6B, a groove in which a groove for transmitting a driving force from a driving motor (not shown on the carrier side) (not shown) by meshing with a gear (not shown) is cut. A forming portion 868 is provided at the lower portion thereof, and in order to suppress wear by the gears as much as possible, conveyance support rails 866 and 867 having flat portions on both sides in the traveling direction of the groove forming portion 868 of the carrier 860 and below, It is provided to support the load of the carrier, and the flat portions of the carrier support rails 866 and 868 are placed on a rotating body 869 such as a bobbin different from the gear on the main body side.
The carrier 860 is conveyed by receiving the driving force from the driving motor by the engagement of the gears at the groove forming portion 868 while being held by the conveying support rails 866 and 867 provided below the carrier 860.
In the G6 generation, the combined weight of the processing substrate 863 to be sputtered and the carrier 860a is about 100 kg, so wear is inevitably generated. Thus, the fitting between the groove forming portion 200 and the gear is reduced as much as possible. doing.
As a material of the carrier 860, Ti is preferably used from the viewpoint of weight and rigidity.
Sputtering is performed in an Ar gas atmosphere under a pressure of 10 ⁻⁵ torr to 10 ⁻² torr using a ITO film having a film composition to be deposited as a target.
In this case, it is required to form the film at a low temperature from the viewpoint of heat resistance (degassing from CF) of the colored layer forming CF.
In addition, in such a magnetron sputtering method, for example, a sintered target material having a composition of In ₂ O ₃ , 90 w% + SnO ₂ , 10 w% is used in a low temperature sputtering with a thickness of 8 mm to 15 mm.
For example, as a target, a Cu plate is used as a backing material, indium solder is used as an adhesive layer, and several sintered target materials are joined together.

In such a sputtering apparatus, sputtering is performed with a target and a processing substrate based on a glass substrate to be sputtered facing each other in a parallel state, but JP-A-8-269686 (patent document) As described in 3), in order to increase the crystallinity of the ITO film for the purpose of reducing the resistance of the ITO film, a grounded conductive rod or net may be disposed between the processing substrate and the target material. It has been broken.
This removes the influence of hydrogen on the formation of the ITO film during sputtering (the influence of inhibiting crystallization and increasing the amorphousness), and improves the crystallinity of the ITO film.
For reducing the resistance of the ITO film, it is effective to use a crystallized ITO film.
In addition, in the conventional case where both ends of the anode rod are fixed in response to an increase in the size of the processed substrate, the deflection due to the weight of the anode rod is ignored in terms of discharge stability. I can't do it.
In consideration of discharge stability, a large-sized conductive bar (hereinafter referred to as an anode rod) that is grounded is used on the target side.
The anode rod is conventionally arranged with both ends fixed.

On the other hand, as described above, as shown in FIG. 6, in the sputtering apparatus, sputtering is performed with a target and a processing substrate based on a glass substrate to be sputtered facing each other in a standing state. However, originally, from the surface of the processing substrate on which foreign matter adheres, as shown in FIG. 5 (b), the processing substrate 130 is on the upper side with respect to the target 30, and it is desired to incline from the vertical direction.
However, in this case, particularly when a large-sized processing substrate is sputtered, if the processing substrate is tilted from the vertical direction with the processing substrate on the upper side, the processing base is warped. As shown, the substrate 30 may be tilted from the vertical direction with the processing substrate 130 on the lower side.
If a holding support bar is installed on the sputter processing surface side so that a large size processing substrate is on the upper side of the target and the processing substrate is not warped, the holding support bar can A shadowed part occurs and the film thickness distribution becomes non-uniform, but the applicant of the present application is not required to warp the processing substrate in such a case, so that the back side of the processing substrate is not the sputter processing side. A method for electrostatic adsorption is proposed in Japanese Patent Application No. 2005-284545 (Patent Document 4).
In addition, when a large-sized processing substrate is set on the upper side with respect to the target and no holding support bar is provided on the sputtering processing surface side, the processing substrate is warped and the film thickness distribution is deteriorated.

  Also, when the substrate is tilted from the vertical direction with the processing substrate on the lower side, the both ends of the anode rod described above are fixed. Warpage was generated, and discharge stability and plasma distribution deteriorated during sputtering, which caused variations in film thickness distribution.

Japanese Patent Laid-Open No. 6-24826 JP-A-6-247765 JP-A-8-269686 Japanese Patent Application No. 2005-284545

As described above, in recent years, progress toward the information society has been remarkable, and the use of display devices has been diversified. In particular, liquid crystal display devices have become widespread, improving productivity and reducing costs. Therefore, imposition production is performed, but there is a strong demand for larger processing based on the glass substrate used for this, and recently, a large transparent glass substrate of G6 generation (1800 mm × 1500 mm size). Mass production at has become a reality.
Under such circumstances, in the sputtering apparatus as shown in FIG. 6A, the sputtering process is performed while the target 871 and the processing substrate 863 are opposed to each other in parallel, and the processing substrate is placed below or below the target. When the upper side of the anode rod is tilted from the vertical direction, both ends of the anode rod described above are fixed. Therefore, due to its own weight, the lower side will be warped, and the discharge will stabilize during sputtering. The plasma distribution is deteriorated, which causes variations in the film thickness distribution, and this countermeasure has been demanded.
The present invention is corresponding to this, and is a sputtering apparatus for performing sputtering by placing the processing substrate downward or upward with respect to the target and inclining from the vertical direction with respect to the target. It is an object of the present invention to provide a sputtering apparatus having a structure capable of suppressing the downward warping due to its own weight.

In the sputtering apparatus of the present invention, the surface of the processing substrate on which the film is to be formed and the target face each other in parallel, and the sputtering is performed by tilting the substrate from the vertical direction with the processing substrate facing downward or upward. A sputtering apparatus in which a plurality of grounded conductive bars are arranged between a processing substrate and a target along the target and the processing substrate so as to be parallel to each other. The both ends of each of the conductive rods are fixed obliquely with respect to the ground side direction from the top side of the target and the processing substrate and shorter than the ground side direction width from the top side of the target. And, it is characterized by being arranged .
In the sputtering apparatus, the processing substrate is mounted on a carrier and sputtered while being transported in-line to form a sputter film on one side of the processing substrate. The plurality of conductive rods arranged in a range, the range including the position range on the target in the direction orthogonal to the transport direction of each conductive rod includes the entire position range of the target in the direction orthogonal to the transport direction, And the position range on the target of the direction orthogonal to the conveyance direction of each said electroconductive rod is arrange | positioned so that it may not mutually overlap.
In this case, it is assumed that the longitudinal direction of the target is arranged in the vertical direction. Further, in any one of the above sputtering apparatuses, the processing substrate is mounted on a carrier and sputtered while being conveyed in-line, and an ITO film for electrodes is formed on one side of the processing substrate by sputtering. It is characterized by being a film.
In addition, any one of the above-described sputtering apparatuses is a magnetron sputtering type sputtering apparatus.

(Function)
According to the first aspect of the present invention , in the sputtering apparatus for performing sputtering by making the processing substrate face down or up with respect to the target and inclining from the vertical direction with respect to the target, the dead weight of the anode rod Therefore, it is possible to provide a sputtering apparatus having a structure capable of preventing the occurrence of warping downward.
In the case of the form of the invention of claim 1, both ends of the conductive rod are fixed, but by making it shorter than the width in the ground side direction from the top side of the target, the conductive rod is placed along the top side of the conductive rod. Compared with the case where it is arranged in the ground side direction, it is possible to suppress warpage due to its own weight.
As described above, in the case of the invention of claim 1, it is assumed that the longitudinal direction of the target is arranged in the vertical direction.
And, in the form of the invention of claim 1 , the processing substrate is mounted on a carrier and sputtered while being conveyed in-line, and a sputter film is formed on one surface side of the processing substrate. The plurality of conductive rods arranged obliquely has a total range of positions of the target in the direction perpendicular to the conveyance direction, the range including the position range on the target in the direction perpendicular to the conveyance direction of each conductive rod. hints, and the position range on the direction of the target perpendicular to the conveying direction of each conductive rod is arranged so as not to overlap each other, by the form of the invention of claim 2, uniform growth A membrane is possible.
The form of the invention of claim 3 , wherein the processing substrate is mounted on a carrier and sputtered while being conveyed in-line, and an ITO film for electrodes is sputter-formed on one surface side of the processing substrate. ani-up is.
And it is a sputtering apparatus of a magnetron sputtering method, by which the form of the invention of claim 4, in the case to achieve good deposition film thickness distribution is particularly effective.
By suppressing the warpage of the conductive rod due to its own weight as much as possible, the distribution of the film thickness to be formed can be improved.
Normally, in order to prevent abnormal discharge due to charge-up or the like and maintain a uniform plasma distribution, the conductive bar is dropped to the grounded anode side.

The present invention, as described above, is a sputtering apparatus that performs sputtering by placing a processing substrate below or above the target and tilting it from the vertical direction with respect to the target, and conducting sputtering. It is possible to provide a sputtering apparatus having a structure capable of suppressing the downward warping due to its own weight.
In particular, while the target and the processing substrate are opposed to each other and are transported, the processing substrate is disposed on the lower side or the upper side with respect to the target and is tilted from the vertical direction, and the conductive rod is disposed. In-line sputtering equipment that performs sputtering processing, especially for color filter forming substrates with a large glass substrate of G6 generation or larger as a base substrate, and a colored layer of each color formed as a color filter on one side of the glass substrate As a substrate, it is possible to provide a sputtering apparatus capable of improving the film thickness distribution in the case of performing a sputtering process.

1 (a) is a diagram showing how the arrangement of the conductive bars of Reference Example 1 of a sputtering apparatus according to the present invention, FIG. 1 (b) conducting viewed from A1 side shown in FIG. 1 (a) It is the figure which showed the arrangement | positioning state of a stick | rod. FIG. 2A is a schematic cross-sectional view showing a state of the target and the processing substrate, a carrier for transporting the processing substrate, and a rotating roll for transport. FIG. 2B shows the carrier of FIG. It is the figure seen from the side. FIG. 3 is a view for explaining the arrangement of the conductive rods of the first example of the embodiment of the sputtering apparatus of the present invention. It is a figure for demonstrating the curvature at the time of fixing the both ends of an electroconductive rod. 5A and 5B are cross-sectional views showing the positional relationship between the target and the processing substrate, respectively. FIG. 6A is a schematic arrangement view of an in-line type ITO sputtering film forming apparatus, and FIG. 6B is a view showing a carrier used in the ITO sputtering film forming apparatus shown in FIG.

Embodiments of the present invention will be described with reference to the drawings.
FIG. 1 (a) is a diagram showing the arrangement of the conductive rods of Reference Example 1 relating to the sputtering apparatus of the present invention, and FIG. 1 (b) is a diagram showing the conductivity as viewed from the A1 side in FIG. 1 (a). FIG. 2A is a schematic sectional view showing a state of a target and a processing substrate, a carrier for transporting the processing substrate, and a rotating roll for transporting, and FIG. FIG. 3 is a view of the carrier of FIG. 2A as viewed from the target side, and FIG. 3 is a view for explaining the arrangement of the conductive rods of the first example of the embodiment of the sputtering apparatus of the present invention. FIG. 5 is a view for explaining warpage when both ends of the conductive rod are fixed, and FIGS. 5A and 5B are cross-sectional views showing the positional relationship between the target and the processing substrate, respectively. .
In FIG. 2, a rotating roll and gears are shown in addition to the carrier.
1 to 5, 10 is a conductive rod (also referred to as an anode rod), 11 to 15 is a conductive rod (also referred to as an anode rod), 30 is a target, 35 is a holding portion, 50 is a fixing portion, and 51 is a supporting portion. Part, 52 is a rotation support part, 53 is a support part, 54 is a screw part, 60 is a conductive rod guide support part, 61 is a through hole, 70 is a warp part, 100 is a carrier, 101 is a processing substrate holding part, 110 is Frame body, 120 is a back plate, 130 is a processing substrate, 150 is a support portion, 161 and 162 are positioning rotary rolls, 161a and 162a are shafts, 171 and 172 are conveyance support rails (also simply referred to as a support portion), and 190 is a rotation A roll (also referred to as a rotating body), 190a is a shaft, 200 is a groove forming portion, and 210 is a gear.

First , Reference Example 1 relating to the sputtering apparatus of the present invention will be described with reference to the drawings. The sputtering apparatus of this example transports in-line with a processing substrate 130 having a large transparent glass substrate of G6 generation size (1800 mm × 1500 mm size) or larger for a display panel as a base substrate mounted on a carrier. 6 is a magnetron sputtering type sputtering apparatus in which sputtering processing is performed and an ITO film for electrodes is formed on one surface side of the processing substrate by sputtering. The sputtering apparatus has the same arrangement as the arrangement shown in FIG.
In Reference Example 1 , during the sputtering process, as shown in FIG. 2A, the processing substrate 130 is mounted on the carrier 100, and the surface on the film forming side of the processing substrate 130 and the target 10 are parallel to each other. The sputtering process is carried out while facing the substrate and carrying it.
In particular, in the first embodiment , as shown in FIG. 1A, a plurality of grounded conductive rods (which are inclined with respect to the target 30 with the processing substrate 130 on the lower side and inclined from the vertical direction) (Also referred to as an anode rod) 10 are arranged between the processing substrate 130 and the target 30 from the top side to the ground side along the target 30 so as to be parallel to each other.
As shown in FIG. 1B, the plurality of conductive rods 10 are arranged so as to be parallel to each other from the top side to the ground side of the target.
Each of the conductive bars 10 is fixed in position with the top end of the conductive bar 10 as a fulcrum, and the ground side end is not fixed to the through hole 61 larger than the conductive bar 10 in a predetermined position. The position of the through hole 61 is controlled.
In the reference example 1 , the ground side portion of the conductive bar 10 is hung from the fulcrum of the end portion on the top side without passing through the through-hole portion 61 larger than the conductive rod 10 and being fixed.
In Reference Example 1 , as shown in FIG. 2, the carrier 100 includes a processing substrate holding unit 101 that holds the processing substrate 130 by fitting the processing substrate 130 and the back plate 120 into the frame 110 in order. ing.
Here, a color filter forming substrate in which a colored layer of each color is formed as a color filter on one surface side of a G6 generation size transparent glass substrate is used as the processing substrate 130, and an ITO film is formed by sputtering on the color filter forming surface side. To do.

As shown in FIG. 4, when both ends of the conductive rod 10 are fixed by the fixing unit 50 and inclined obliquely from the vertical direction, warpage (warping part 70) occurs due to its own weight. In the first example, as described above, each of the conductive bars 10 is fixed in position with the top end portion as a fulcrum, and the ground end portion is not fixed, and the conductive rod 10 in a predetermined position is fixed. By passing the through hole 61 larger than the conductive rod and controlling the position in the through hole 61, the end on the ground side is not fixed as compared with the case where both ends of the conductive rod 61 are fixed. Therefore, the warp deformation can be released by the end portion on the ground side, so that the warp due to its own weight can be suppressed.
Thus, by suppressing the warpage due to the weight of the conductive rod 10, the distribution of the film thickness to be formed can be improved.

Here, as the target 10, for example, a sintered target material having a composition of In ₂ O ₃ , 90 w% + SnO ₂ , 10 w% and having a thickness of 8 mm to 15 mm is used, but the size is increased. For this purpose, a Cu plate is used as a backing material, indium solder is used as an adhesive layer, and a plurality of sintered target materials are connected to form a square shape.
Sputtering is performed in an Ar gas atmosphere under a pressure of 10 ⁻⁵ torr to 10 ⁻² torr using a plate-shaped ITO having a film composition to be formed as a target.
In this case, the film is formed at a low temperature from the viewpoint of the heat resistance (degassing from CF) of the colored layer forming the CF.

The sputtering apparatus of this example performs the sputtering process while being transported in the same way as the sputtering apparatus shown in FIG. 6. The flow from the placement of each chamber and the loading and unloading of the processing substrate is basically shown in FIG. This is the same as the sputtering apparatus shown in FIG.
The carrier 100 in this example is the same as the carrier 860 shown in FIG.
The carrier 100 is basically transported in the same manner as the sputtering apparatus shown in FIG. 6, and as shown in FIG. 4, a groove is formed by cutting a groove that transmits the driving force from the driving motor by meshing with the gear 210. The portion 200 is provided at the lower portion of the carrier 100, and further, in order to suppress wear due to the gear 210 as much as possible, a conveyance support rail 171 having a flat portion on both sides and below the groove forming portion 200 of the carrier 100, 172 is provided to support the load of the carrier so that the flat portions of the carrier-side transport support rails 171 and 172 ride on a rotating body 190 such as a bobbin different from the gear 210 on the main body side. It has become.
In this example, a plurality of such rotating bodies 190 and gears 210 are arranged along the conveyance path for conveyance.

In the sputtering apparatus of this example, simply, the processing substrate 130 (corresponding to 863 in FIG. 6) is put into a loading chamber (corresponding to 811 in FIG. 6), and a spare chamber (corresponding to 812 in FIG. 6) is provided. After that, it is put into the first sputter chamber (corresponding to 813 in FIG. 6), sputtered while being transported, and carried into the rotation processing part (corresponding to 820 in FIG. 6). The direction is changed, the direction is changed, and the second sputter chamber (corresponding to 833 in FIG. 6) is charged and sputtered while being conveyed.
Then, after sputtering, it is unloaded through a preliminary chamber (corresponding to 832 in FIG. 6) and an unloading chamber (corresponding to 831 in FIG. 6).
In addition, there is a mechanical partition at the boundary of each chamber, and the opening of each partition is performed with the same degree of vacuum in the chambers on both sides.
Moreover, about the material of frame 110 other than the process board | substrate holding | maintenance part 101, rigidity, big, strong, and a light thing are preferable, and Ti and stainless steel are mentioned.

A first example of the embodiment of the sputtering apparatus of the present invention will be described with reference to FIG.
The first example is the same as the reference example 1 except that the arrangement and fixing method of the conductive rods are changed in the reference example 1 described above.
In the first example , as shown in FIG. 3, a plurality of grounded conductive rods 11 to 15 are arranged between the processing substrate 130 and the target 30 along the target 30 so as to be parallel to each other. The plurality of grounded conductive rods 11 to 15 are inclined with respect to the ground side direction from the top side of the target and the processing substrate, and from the top side of the target to the ground side. It is shorter than the width in the direction, and both ends thereof are fixed and arranged.
The same fixing part as in Reference Example 1 is used for fixing.
In the case of the first example , warping is suppressed by shortening the length of the conductive rods 11 to 15.
The first example is similar to Reference Example 1, in which a processing substrate is mounted on a carrier and sputtered while being transported in-line, and sputter deposition is performed on one side of the processing substrate. The plurality of conductive rods 11 to 15 arranged obliquely have a range of positions on the target in a direction perpendicular to the conveyance direction of each conductive rod, and the target position in the direction perpendicular to the conveyance direction. The film thickness distribution of the film is improved by arranging the position ranges on the target in the direction including the entire range and orthogonal to the transport direction of each conductive rod so as not to overlap each other.
As shown in FIG. 3, the position ranges of the conductive bars 11 to 15 on the target in the direction (y direction) orthogonal to the transport direction (x direction) are y0 to y1, y1 to y2, respectively. y2 to y3, y3 to y4, and y4 to y5.

The first example is one example and the present onset Ming is not limited thereto.
In the fixing method of the conductive rod of Reference Example 1 , as in the first example , a plurality of grounded conductive rods are respectively connected from the top side to the ground side direction of the target and the processing substrate. A configuration in which the target is arranged obliquely and shorter than the width in the ground side direction from the top side of the target is also exemplified. Of course, it is good also as a form which provided the structure arrangement | positioning of each part shown in FIG. 6 linearly.

10 Conductive rod (also called anode rod)
11-15 Conductive rod (also called anode rod)
30 target 35 holding part 50 fixing part 51 support part 52 rotation support part 53 support part 54 screw part 60 conductive rod guide support part 61 through hole 70 warp part 100 carrier 101 processing substrate holding part 110 frame body 120 back plate 130 processing board 150 Support portions 161 and 162 Positioning rotary rolls 161a and 162a Shafts 171 and 172 Conveyance support rails (also simply referred to as support portions)
190 Rotating roll (also called rotating body)
190a Shaft 200 Groove forming part 210 Gear 811 Loading chamber 812 Preliminary chamber 813 Sputtering chamber 820 Rotating processing part 821 Rotating part 831 Unloading chamber 832 Preliminary chamber 833 Sputtering chamber 841 to 843 Chamber partition 841a to 843a Chamber partition 860, 860a Carrier 860A Substrate Holding portion 861 Frame body 862 Back plate (also referred to as pressing plate)
863 Processing substrate 864 Support unit 865 Positioning rotation rollers 865a and 865b Shafts 866 and 867 Support unit (support unit for conveyance)
868 Groove forming portion 869 Rotating roller (also referred to as rotating portion)
869a shaft 871 target 891 horizontal direction 892 vertical direction

Claims (4)

  A plurality of grounded sputtering apparatuses that perform sputtering by placing the processing substrate surface on the side facing the target and the target in parallel, and inclining from the vertical direction with the processing substrate facing downward or upward with respect to the target. A plurality of grounded conductive bars, each of which is arranged between the processing substrate and the target so as to be parallel to each other, along the target and the processing substrate. The both ends of the target and the processing substrate are fixed obliquely with respect to the ground side direction from the top side and shorter than the ground side direction width from the top side of the target. A sputtering apparatus characterized by comprising: 2. The sputtering apparatus according to claim 1 , wherein the processing substrate is mounted on a carrier and sputtered while being conveyed in-line, and a sputter film is formed on one side of the processing substrate. A plurality of conductive rods arranged obliquely has a range including the position range on the target in the direction orthogonal to the conveyance direction of each conductive rod, and the entire range of the target position in the direction orthogonal to the conveyance direction. And a position range on the target in a direction perpendicular to the conveying direction of each of the conductive bars is arranged so as not to overlap each other. A sputtering apparatus according to claims 1 to 1 wherein 2 Neu Zureka, the processing substrate, and mounted on a carrier, in-line, performs a sputtering process while conveying, on one side of the substrate A sputtering apparatus characterized by sputtering an ITO film for electrodes. A sputtering apparatus according to claim 1 for stone 3 Neu Zureka item 1, the sputtering apparatus which is a sputtering apparatus of a magnetron sputtering method.

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