JP5217700B2 - Semiconductor manufacturing equipment and exhaust trap equipment - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus and an exhaust trap apparatus, and more particularly, to a semiconductor manufacturing apparatus and an exhaust trap apparatus suitable for collecting unreacted gas discharged from a reactor of a MOCVD apparatus.

  In manufacturing a semiconductor device, a film such as InP (indium phosphide) or AlGaInP (aluminum gallium indium phosphide) is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus. When forming the above film, exhaust gas is discharged from the reactor of the MOCVD apparatus. This exhaust gas contains unreacted gas such as phosphine. The unreacted gas is collected from the exhaust gas by the exhaust trap device.

  Conventionally, as an exhaust trap apparatus for collecting unreacted gas, an apparatus disclosed in Japanese Patent Laid-Open No. 2006-314864 is known. In this apparatus, the exhaust gas is cooled by a cooling coil to solidify the unreacted gas, and the unreacted gas is collected from the exhaust gas.

JP 2006-314864 A

  On the other hand, in the conventional exhaust trap apparatus described above, the concentration of the unreacted gas is higher on the upstream side than on the downstream side in the exhaust gas passage in the apparatus. For this reason, in the cooling coil, unreacted gas accumulates in a concentrated manner at a location where the concentration of unreacted gas is high. As a result, the exhaust gas passage is locally blocked. Then, every time the exhaust gas passage is locally blocked, it is necessary to perform an operation of replacing the exhaust trap device.

  The present invention has been made to solve the above-described problems, and provides a semiconductor manufacturing apparatus and an exhaust trap apparatus that prevent an exhaust gas passage from being blocked by deposits of unreacted gas generated in a cooling coil. The purpose is to provide.

The first invention is an exhaust trap device for achieving the above object, wherein the housing, an exhaust gas introduction port for introducing exhaust gas into the housing, and exhaust gas to the outside of the housing are provided. An exhaust gas lead-out port to be led out, a cooling coil provided inside the housing, a refrigerant supply means for supplying a refrigerant to the cooling coil, a heating means for heating the cooling coil, a partition plate, and a pipe line And the heating means supplies a heating medium to the cooling coil, the inner surface of the housing is composed of a first bottom surface, a second bottom surface, and a side surface, and the first end of the cooling coil is Opposite the first bottom surface, the second end of the cooling coil is opposed to the second bottom surface, the exhaust gas inlet is provided on the side surface, and the exhaust gas outlet is the second Set on the bottom The partition plate closes a gap between the cooling coil and the first bottom surface, and the pipe line passes through the second end of the cooling coil from the exhaust gas outlet and the first end. It extends through the inside of the cooling coil to the end, and reaches the mouth provided on the first bottom surface side from the first end .

The second invention is a semiconductor manufacturing apparatus for achieving the above object, wherein a reactor for exhausting exhaust gas containing phosphorus, a housing, and exhaust for introducing the exhaust gas into the housing are provided. A gas inlet, an exhaust gas outlet for leading the exhaust gas to the outside of the housing, a cooling coil provided inside the housing, a refrigerant supply means for supplying a refrigerant to the cooling coil, and the cooling coil And an exhaust strap device including a partition plate and a conduit , wherein the heating means supplies a heating medium to the cooling coil, and an inner surface of the housing is a first bottom surface. The second end of the cooling coil faces the first bottom surface, the second end of the cooling coil faces the second bottom surface, An air gas inlet is provided on the side surface, the exhaust gas outlet is provided on the second bottom surface, and the partition plate closes a gap between the cooling coil and the first bottom surface, Extends through the interior of the cooling coil from the exhaust gas outlet to the first end through the second end of the cooling coil, and from the first end to the first bottom surface side. It is characterized by reaching the provided mouth .

  According to the present invention, when collecting unreacted gas in the exhaust gas in the exhaust trap device, it is possible to prevent the exhaust gas passage from being blocked by the deposit of unreacted gas generated in the cooling coil.

Embodiment 1 FIG.
The first embodiment relates to a semiconductor manufacturing apparatus and an exhaust trap apparatus that collect unreacted gas contained in the exhaust gas of the MOCVD apparatus with a cooling coil. The exhaust trap apparatus according to Embodiment 1 prevents the exhaust gas passage from being locally blocked by melting the deposits of unreacted gas generated in the cooling coil. First, the semiconductor manufacturing apparatus will be described below. Thereafter, the exhaust trap device will be described.

[Semiconductor Manufacturing Apparatus of First Embodiment]
The semiconductor manufacturing apparatus according to the first embodiment will be described below. FIG. 1 is a diagram showing this semiconductor manufacturing apparatus. In FIG. 1, the direction of the arrow indicates the downstream direction of the exhaust path in this semiconductor manufacturing apparatus. This semiconductor manufacturing apparatus is an apparatus for forming a phosphorus compound semiconductor and includes a reaction furnace 10. The reaction furnace 10 is connected to an exhaust trap device 12. The exhaust trap device 12 is connected to a decompression pump 16 through a slot valve 14. The semiconductor manufacturing apparatus also includes an exhaust trap device 12 at a position downstream of the decompression pump 16.

  In this semiconductor manufacturing apparatus, unreacted gas, reaction products, etc. (hereinafter simply referred to as “unreacted gas”) in the material for forming a phosphorus compound semiconductor film are discharged from the reaction furnace 10 as exhaust gas. . Next, the exhaust gas is introduced into the exhaust trap device 12. In the exhaust trap device 12, unreacted gas in the exhaust gas is collected. Thereafter, the exhaust gas is exhausted by a decompression pump. In this exhaust path, unreacted gas in the exhaust gas is also collected by the exhaust trap device 12 provided downstream of the decompression pump.

  As described above, in this semiconductor manufacturing apparatus, the unreacted gas in the exhaust gas discharged from the reaction furnace 10 is collected by the exhaust trap device 12 to make the exhaust gas harmless and discharged. Further, the collection efficiency is increased by disposing the exhaust trap device 12 downstream of the decompression pump.

[Configuration of Exhaust Trap Device of Embodiment 1]
Then, the structure of the exhaust trap apparatus 12 mentioned above is demonstrated. FIG. 2 is a schematic cross-sectional view of the exhaust trap device 12. As shown in FIG. 2, the exhaust trap 12 includes a housing 20. The housing 20 has a cylindrical shape with AA ′ as the central axis. The upper end of the housing 20 is closed with a flange 22. The lower end of the housing 24 is closed with a flange 24. An exhaust gas inlet 26 is provided on the side surface of the housing 20. In addition, a lead-out pipe 28 having AA ′ as a central axis is provided inside the housing 20. The outlet pipe 28 extends from the vicinity of the upper end of the housing 20 to the outside of the housing 20 through the lower end. The lead-out pipe 28 is connected to an exhaust gas lead-out port 30 provided at the lower end of the housing 20. A cooling coil 32 and a cooling coil 34 having different diameters are provided inside the housing 20 so as to surround the outlet pipe 28.

  The arrangement of the outlet tube 28, the cooling coil 32, and the cooling coil 34 described above will be described in detail. The distance between the outlet tube 28 and the inner cooling coil 32 is d1, the distance between the inner cooling coil 32 and the outer cooling coil 34 is d2, and the distance between the outer cooling coil 34 and the side surface of the housing 20 is d3. In this case, the outlet pipe 28, the cooling coil 32, and the cooling coil 34 are provided so that d1 <d2 <d3.

  Next, a cooling unit for cooling the exhaust gas in the exhaust trap device 12 will be described. The cooling coil 32 and the cooling coil 34 described above are composed of a single tube. A cooling water inlet 36 and a cooling water outlet 38 provided on the upper end side of the housing 20 are connected to the pipes constituting the cooling coil 32 and the cooling coil 34. The cooling unit for cooling the exhaust gas is configured as described above. For this reason, by introducing the cooling water into the cooling water inlet 36, the cooling water can be circulated inside the pipes of the cooling coil 32 and the cooling coil 34, and can be led out from the cooling water outlet 38. Further, the cooling coil 32, the cooling coil 34, the cooling water inlet 36 and the cooling water outlet 38 are fixed to the flange 22 on the upper end side of the housing 20. For this reason, the flange 22 can be removed together with the cooling coil 32, the cooling coil 34, the cooling water inlet 36 and the cooling water outlet 38. Thereby, the maintenance of the cooling coil 32 and the cooling coil 34 can be easily performed.

  Next, a heating unit that melts unreacted deposits generated in the cooling coil by cooling the exhaust gas by the cooling unit described above will be described. The heating unit in the first embodiment applies the above-described cooling unit as it is. Specifically, hot water is introduced from the cooling water inlet 36 described above, and the hot water is circulated inside the pipes of the cooling coil 32 and the cooling coil 34.

  Further, the outlet pipe inlet 40 that is the inlet of the outlet pipe 28 inside the housing 20 is disposed at a position closer to the flange 22 on the upper end side of the housing 20 than the cooling coil 32 and the cooling coil 34. For this reason, when the deposits of the cooling coil 32 and the cooling coil 34 are melted by the heating unit described above, they do not enter the outlet pipe inlet 40. On the other hand, the exhaust trap device 12 includes an accumulation container 42 on the flange 24 on the lower end side of the housing 20. For this reason, the deposit melted by the heating unit described above is accumulated in the accumulation container 42. Further, the accumulation container 42 can be removed together with the flange 24.

  Next, a mechanism for controlling the flow of exhaust gas in the exhaust trap device 12 will be described. The exhaust trap device 12 includes a partition plate 44 that closes a gap between the outer periphery of the outer cooling coil 34 and the upper end of the housing 20. Further, the outlet pipe inlet 40 is located at the center of the cooling coil 32. As described above, the outlet pipe inlet 40 is located on the upper end side of the housing 20 with respect to the cooling coil 32 and the cooling coil 34.

  Here, in FIG. 2, the direction in which the exhaust gas introduced into the exhaust trap device 12 flows is indicated by an arrow. As indicated by this arrow, the exhaust gas introduced from the exhaust gas inlet 26 by the mechanism described above first flows to the lower end side of the housing 20 along the outer periphery of the cooling coil 34 due to the partition plate 44. Thereafter, the exhaust gas flows from the lower end side of the housing 20 toward the outlet pipe inlet 40 on the upper end side.

[Collecting unreacted gas in the exhaust trap apparatus of Embodiment 1]
Next, a process for collecting unreacted gas in the exhaust gas by the exhaust trap device 12 will be described below. Exhaust gas is discharged from the reactor 10 of the semiconductor manufacturing apparatus described above. This exhaust gas is introduced into the exhaust trap device 12 from the exhaust gas inlet 26.

  As described above, the exhaust gas introduced into the exhaust trap device 12 first flows to the lower end side of the housing 20 along the outer periphery of the cooling coil 34. Next, the exhaust gas flows from the lower end side of the housing 20 toward the upper end side. At this time, the exhaust gas flows between the outlet pipe 28 and the cooling coil 32 and between the cooling coil 32 and the cooling coil 34. Then, the exhaust gas flowing to the upper end side enters the outlet pipe inlet 40, passes through the outlet pipe 28, and is discharged from the exhaust gas outlet 36.

  When the exhaust gas flows through the exhaust trap device 12 as described above, the cooling unit introduces the cooling water from the cooling water inlet 36 and circulates the cooling water through the cooling coil 32 and the cooling coil 34. . As a result, the exhaust gas is cooled by the cooling coil 32 and the cooling coil 34. The unreacted gas in the exhaust gas becomes a temperature below the melting point and solidifies. Solids of unreacted gas are deposited on the cooling coil 32 and the cooling coil 34. As a result, unreacted gas in the exhaust gas is collected. Then, the exhaust gas discharged from the exhaust gas outlet 36 is rendered harmless.

  On the other hand, the cooling operation of the cooling coil 32 and the cooling coil 34 is lowered by continuing the collection operation of the unreacted gas and accumulating solids of the unreacted gas in the cooling coil 32 and the cooling coil 34. Further, since the concentration of the unreacted gas is higher on the upstream side of the exhaust gas passage, the concentration of the unreacted gas concentrates on the lower end side of the cooling coil 32 and the cooling coil 34 (regions H1 and H2 shown in FIG. 2). Solidified material accumulates. As a result, the exhaust gas passage is locally blocked in the regions H1 and H2.

  Therefore, when this problem occurs, warm water is circulated through the cooling coil 32 and the cooling coil 34 by introducing warm water from the cooling water inlet 36 by the heating unit described above. As a result, the deposits on the cooling coil 32 and the cooling coil 34 become higher than the melting point and melt. As a result, the deposit is removed, and the cooling efficiency can be returned to the initial state. In addition, local blockage of the exhaust gas passage can be eliminated.

  On the other hand, the deposit that has been melted and separated from the cooling coil 32 and the cooling coil 34 is collected in the accumulation container 42. Further, the accumulation container 42 can store deposits for a plurality of times of the above-described melting process. For this reason, it is not necessary to replace the exhaust trap device 12 until deposits are accumulated up to the limit of the accumulation container 42. Therefore, the replacement period of the exhaust trap device 12 can be extended more than twice.

[Effect of Embodiment 1]
As described above, in the exhaust trap device 12 according to the first embodiment, it is possible to prevent the cooling efficiency of the cooling coil 32 and the cooling coil 34 from being lowered and the local blockage of the exhaust gas passage. In addition, the replacement period of the exhaust trap device 12 can be extended more than twice.

[Modification of Embodiment 1]
In the exhaust trap device 12 according to the first embodiment, the method for controlling the process for cooling the unreacted gas and the process for heating the deposit of the unreacted gas is automatically controlled by a method manually controlled by a person. It doesn't matter how.

Embodiment 2. FIG.
The second embodiment relates to an exhaust trap apparatus that collects unreacted gas contained in the exhaust gas of the MOCVD apparatus with a cooling coil. Only the differences from the first embodiment will be described below with respect to the exhaust trap device according to the second embodiment.

[Configuration of Exhaust Trap Device of Second Embodiment]
First, the configuration of the exhaust trap device according to the second embodiment will be described. FIG. 3 shows a schematic cross-sectional view of the exhaust trap device 46 according to the second embodiment. In this exhaust trap device 46, the diameters of the cooling coil 48 and the cooling coil 50 increase as they approach the flange 24 side. In addition, the distance between the outlet tube 28 and the cooling coil 48 increases as the distance from the flange 24 side approaches. Since other configurations are the same as those in the first embodiment, the description thereof is omitted.

[Collecting unreacted gas in the exhaust trap apparatus of Embodiment 2]
Next, collection of unreacted gas in the exhaust trap device 46 will be described. Exhaust gas is introduced into the exhaust trap device 46 from the exhaust gas inlet 26 as in the first embodiment. As described in the first embodiment, the concentration of the unreacted gas in the exhaust gas introduced into the exhaust trap device 46 is higher on the upstream side of the exhaust gas passage. In FIG. 3, the direction in which the exhaust gas introduced into the exhaust trap device 46 flows is indicated by arrows. As indicated by this arrow, the exhaust gas flows from the exhaust gas inlet 26 toward the flange 24 on the lower end side of the housing 20. Thereafter, the exhaust gas flows from the lower end side of the housing 20 to the upper end side of the housing 20 through the lead-out pipe 28 and the cooling coil 48 and between the cooling coil 48 and the cooling coil 50. Thus, in the cooling coil 48 and the cooling coil 50, the location on the flange 24 side (regions H1 and H2 shown in FIG. 3) is upstream of the exhaust gas passage. Therefore, since the concentration of the unreacted gas in the H1 and H2 regions is high, the unreacted gas coagulates accumulate in this region. Therefore, if the cooling coil 48 and the cooling coil 50 have the same shape as in the first embodiment, the space between the outlet pipe 28 and the cooling coil 48 is locally blocked in the regions H1 and H2.

  However, in the exhaust trap device 46, as described above, the distance between the outlet pipe 28 and the cooling coil 48 becomes larger as it approaches the flange 24 side. Therefore, the distance between the lead-out pipe 28 and the cooling coil 48 is larger in the H1 and H2 regions than in the first embodiment. For this reason, even if unreacted gas concentrates and accumulates in the H1 and H2 regions, blockage between the outlet tube 28 and the cooling coil 48 is less likely to occur. Therefore, in this exhaust trap device 46, it is possible to earn time until local blockage occurs in the exhaust gas passage. As a result, the time that can be used for collecting exhaust gas can be lengthened.

[Effect of Embodiment 2]
As described above, in the exhaust trap device 46 according to the second embodiment, the time available for collecting exhaust gas can be lengthened. For this reason, the operating rate of the semiconductor manufacturing apparatus using this exhaust trap device 46 can be increased.

[Modification of Embodiment 2]
In the exhaust trap device 46 according to the second embodiment, as shown in FIG. 3, the diameter of the cooling coil 48 and the diameter of the cooling coil 50 are increased at the same ratio toward the flange 24 side. The second embodiment is not limited to this. The diameter of the cooling coil 50 may be larger as it approaches the flange 24 side at a larger ratio than the diameter of the cooling coil 48. In this case, the distance between the cooling coil 48 and the cooling coil 50 increases as the distance from the flange 24 increases. For this reason, local blockage between the cooling coil 48 and the cooling coil 50 can also be prevented. As a result, the operating rate of the semiconductor manufacturing apparatus using the exhaust trap device 46 can be further increased.

Embodiment 3 FIG.
The third embodiment relates to an exhaust trap apparatus that collects unreacted gas contained in the exhaust gas of the MOCVD apparatus with a cooling coil. Only the differences from the first embodiment will be described below with respect to the exhaust trap device according to the third embodiment.

[Characteristics of Exhaust Trap Device of Embodiment 3]
FIG. 4 shows a schematic cross-sectional view of the exhaust trap device 52 according to the third embodiment. Unlike the first embodiment, the exhaust trap device 52 is provided with a heater 54 on the outer periphery of the housing 20. When deposits of unreacted gas are generated in the cooling coil 32 and the cooling coil 34 of the exhaust trap device 52, the cooling unit for cooling the cooling coil 32 and the cooling coil 34 is stopped, and the deposition is performed by the heater 54. Heat and melt the product.

[Effect of Embodiment 3]
As described above, in the exhaust trap device 52 according to the third embodiment, the unreacted gas deposit can be melted without flowing warm water through the cooling coil 32 and the cooling coil 34. Thereby, the fall of the cooling efficiency of the cooling coil 32 and the cooling coil 34 and local obstruction | occlusion can be prevented. In addition, the replacement period of the exhaust trap device 52 can be extended more than twice.

[Modification of Embodiment 3]
In the exhaust trap device 52 according to the third embodiment, the method of melting and peeling the deposits of unreacted gas without flowing hot water through the cooling coil 32 and the cooling coil 34 is limited to the method of heating with the heater 54. Absent. Instead of heating with the heater 54, for example, a method of introducing a high temperature gas from the exhaust gas inlet 26 and melting the deposit by the heat of the high temperature gas may be used.

  In the exhaust trap device 52 according to the third embodiment, cooling water may be circulated through the cooling coil 32 and the cooling coil 34 only when unreacted gas is collected. And when introducing the exhaust gas that does not need to collect the unreacted gas, by stopping the circulation of the cooling water, the deposit of the unreacted gas generated in the cooling coil 32 and the cooling coil 34, A method of melting by the heat of the exhaust gas itself may be used.

Embodiment 4 FIG.
The fourth embodiment relates to an exhaust trap apparatus that collects unreacted gas contained in the exhaust gas of the MOCVD apparatus with a cooling coil. Only the differences from the first embodiment will be described below with respect to the exhaust trap device according to the fourth embodiment.

[Configuration of Exhaust Trap Device of Embodiment 4]
First, the configuration of the exhaust trap device according to the fourth embodiment will be described. FIG. 5 shows a schematic cross-sectional view of the exhaust trap device 56 according to the fourth embodiment. Unlike the first embodiment, the exhaust trap device 56 is not provided with a flange and a collecting container on the lower end side of the housing 58. Instead, the bottom of the housing 58 has a conical shape, and a separation tank 60 is provided at the bottom of the housing 58. This separation tank 60 can be separated from the bottom of the housing 58. Further, a valve 62 and a valve 64 are provided at a connection portion between the separation tank 60 and the bottom of the housing 58. By opening the valve 62 and the valve 64, the melted unreacted gas deposit can be separated from the housing 58 side and accumulated in the tank 60. The housing 58 can be sealed by closing the valve 62 and the valve 64.

[Separation Tank of Exhaust Trap Device of Embodiment 4]
Next, the separation tank 60 in the exhaust trap device 56 will be described. In the exhaust trap device 56, the unreacted gas deposits generated in the cooling coil 32 and the cooling coil 34 can be melted and separated in the separation tank 60. Then, when deposits are accumulated in the separation tank 60 to the limit, the valve 62 and the valve 64 are closed, and only the separation tank 60 is replaced. When this separation tank 60 is replaced, the valve 62 and the valve 64 are closed. For this reason, the collection operation of unreacted gas can be continued without causing exhaust gas or the like to flow out.

[Effect of Embodiment 4]
As described above, in the exhaust trap device 56 according to the fourth embodiment, the deposit of unreacted gas can be discarded by replacing only the separation tank 60. This eliminates the need to replace the exhaust trap device 56. Thereby, the operation rate of the semiconductor manufacturing apparatus using the exhaust trap device 56 can be increased.

2 is a diagram showing an exhaust path of the semiconductor manufacturing apparatus in the first embodiment. FIG. 1 is a schematic cross-sectional view of an exhaust trap device in Embodiment 1. FIG. FIG. 5 is a schematic cross-sectional view of an exhaust trap device in a second embodiment. FIG. 6 is a schematic cross-sectional view of an exhaust trap device in a third embodiment. FIG. 6 is a schematic cross-sectional view of an exhaust trap device in a fourth embodiment.

Explanation of symbols

10 Reactor 12; 46; 52; 56 Exhaust trap device 20; 58 Housing 22, 24 Flange 26 Exhaust gas inlet 28 Lead pipe 30 Exhaust gas outlet 32; 48, 34; 50 Cooling coil 36 Cooling water inlet 38 Cooling Water outlet 40 Outlet inlet 42 Accumulated container 44 Partition plate 54 Heater 60 Separation tank 62, 64 Valve

Claims (5)

A housing;
An exhaust gas inlet for introducing exhaust gas into the housing;
An exhaust gas outlet for leading exhaust gas to the outside of the housing;
A cooling coil provided inside the housing;
Refrigerant supply means for supplying refrigerant to the cooling coil;
Heating means for heating the cooling coil;
A partition plate;
With a conduit ,
The heating means supplies a heating medium to the cooling coil;
The inner surface of the housing is composed of a first bottom surface, a second bottom surface and side surfaces,
A first end of the cooling coil faces the first bottom surface;
The second end of the cooling coil faces the second bottom surface;
The exhaust gas inlet is provided on the side surface;
The exhaust gas outlet is provided in the second bottom surface;
The partition plate closes a gap between the cooling coil and the first bottom surface,
The conduit extends through the cooling coil from the exhaust gas outlet to the first end through the second end of the cooling coil, and the first end from the first end. An exhaust trap device that reaches an opening provided on the bottom side . The exhaust trap apparatus according to claim 1 , wherein a diameter of the cooling coil increases as it approaches the second bottom surface. The exhaust trap apparatus according to claim 1, further comprising an accumulation container provided on the second bottom surface. The exhaust trap apparatus according to claim 3, wherein the accumulation container is removable. A reactor for exhausting exhaust gas containing phosphorus;
A housing, an exhaust gas inlet for introducing the exhaust gas into the housing, an exhaust gas outlet for introducing the exhaust gas to the outside of the housing, a cooling coil provided inside the housing, An exhaust strap device comprising a refrigerant supply means for supplying a refrigerant to the cooling coil, a heating means for heating the cooling coil, a partition plate, and a pipe line ;
Equipped with a,
The heating means supplies a heating medium to the cooling coil;
The inner surface of the housing is composed of a first bottom surface, a second bottom surface and side surfaces,
A first end of the cooling coil faces the first bottom surface;
The second end of the cooling coil faces the second bottom surface;
The exhaust gas inlet is provided on the side surface;
The exhaust gas outlet is provided in the second bottom surface;
The partition plate closes a gap between the cooling coil and the first bottom surface,
The conduit extends through the cooling coil from the exhaust gas outlet to the first end through the second end of the cooling coil, and the first end from the first end. A semiconductor manufacturing apparatus characterized by reaching a mouth provided on the bottom side .

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