JP5217144B2 - Organic EL display, optical component used therefor, gas barrier substrate used therefor - Google Patents

Description

The present invention relates to an organic EL display that emits light by converting electric energy into light, an optical component used therefor, and a gas barrier substrate used therefor.

An organic electroluminescence device (hereinafter referred to as an organic EL device) injects holes and electrons into a fluorescent organic compound and recombines them to generate excitons, and emits light when the excitons are deactivated. It is a self-luminous element to be used.

The biggest problem of the organic EL element is to extend the life of the light emitting part.

One cause of the short life is the generation of non-light emitting portions (dark spots).

The non-light emitting portion grows as the lighting accumulated time increases, the non-light emitting area increases, and the light emission luminance of the light emitting portion decreases.

When the diameter of the non-light emitting portion grows to about 20 μm or more, it can be visually confirmed, and the life as an organic EL element will be exhausted.

As a main cause of generation of non-light-emitting portions, contact of water vapor and oxygen with the organic EL layer is known.

As a countermeasure, an attempt has been made to dispose a water capturing agent (barium oxide) in the organic EL display. (For example, see Patent Document 1)

JP 2002-33187 A

However, since barium oxide (BaO) used as a water catching agent is a deleterious substance, an environmental problem arises.
In addition, since barium oxide is a powder, it is scattered when encapsulated, which has a problem of poor workability.

The subject of this invention is providing the organic electroluminescent display body which suppressed generation | occurrence | production and growth of a non-light-emitting part.

According to the first aspect of the present invention , an uneven layer is formed on one surface of a gas barrier substrate having a gas barrier layer on at least one surface of a base material, and a transparent electrode layer is formed on the other surface of the gas barrier substrate. An organic EL display having an optical article,
An organic EL element containing a phosphorescent compound is formed on the transparent electrode layer, a back electrode is formed on the organic EL element, the gas barrier layer is made of silicon nitride or silicon oxide, and the gas barrier layer An organic EL display having a thickness of 150 nm ± 10 nm .

As the substrate, it is preferable to use a plastic film having transparency, mechanical strength, and heat resistance.

As thickness of a base material, 6-30 micrometers is preferable.

The gas barrier layer may be a single layer or a multilayer.
When the gas barrier layer is a multilayer, different materials may be used for each layer.

A transparent inorganic material can be used as the material of the gas barrier layer.

The thickness of the gas barrier layer is preferably about 50 nm to 2 μm for the entire gas barrier layer.

As the transparent inorganic material, silicon oxide or silicon nitride can be used.

The composition of silicon oxide is preferably SiOx (x = 1.7 to 2.0).

As the silicon nitride, SiN (x = 1.0 to 1.4) can be used.

Examples of the polyester include polyethylene terephthalate, polybutylene terephthalate, polyethylene-2,6-naphthalate, and the like.

An example of a polyolefin is polypropylene.

Polyester, polyethylene, and polyolefin have high mechanical strength, and have a light transmittance of 80 to 97% in the visible light region with a wavelength of 450 to 600 nm. It is suitable as a material used for an electroluminescence (organic EL) display.

Polyester, polyethylene, and polyolefin may be unstretched, uniaxially stretched, or biaxially stretched, but biaxially stretched are preferable from the viewpoint of dimensional stability and mechanical properties.

Further, polyesters, polyethylenes, and polyolefins may contain additives (for example, antioxidants, weathering agents, heat stabilizers, lubricants, crystal nucleating agents) as long as transparency is not impaired.

An ionizing radiation curable acrylic resin can be used as the material for the uneven layer, and ITO (indium-tin oxide), In ₂ O ₃ , TiO ₂ , SnO ₂ , ZnO can be used as the material for the transparent electrode layer. it can.

As an ionizing radiation curable acrylic resin, for example, an ionizing radiation curable acrylic urethane resin, an ionizing radiation curable polyester acrylate resin, an ionizing radiation curable epoxy acrylate resin, or the like is used with a radiation (ultraviolet or electron beam) polymerization initiator. Added resin can be used.

As the phosphorescent compound, 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin platinum complex can be used.

As a material for the back electrode, Al, Li, Ag, Ca, Mg, Y, In, and alloys containing them can be used.

According to the first aspect of the present invention , an uneven layer is formed on one surface of a gas barrier substrate having a gas barrier layer on at least one surface of a base material, and a transparent electrode layer is formed on the other surface of the gas barrier substrate. An organic EL display having an optical article,
An organic EL element containing a phosphorescent compound is formed on the transparent electrode layer, a back electrode is formed on the organic EL element, the gas barrier layer is made of silicon nitride or silicon oxide, and the gas barrier layer An organic EL display having a thickness of 150 nm ± 10 nm .

By using such a gas barrier substrate for an organic EL display, an organic EL display in which generation and growth of non-light emitting portions are suppressed can be obtained.

By using such a gas barrier substrate for an organic EL display, an organic EL display capable of obtaining a high-luminance image display can be produced.

By using such a gas barrier substrate for an organic EL display,
An organic EL display having a high gas barrier property can be produced.

By setting x of SiOx to a range of 1.7 to 2.0, an organic EL display having a colorless and transparent and high gas barrier property can be produced.

When x of SiOx is less than 1.7, SiOx is yellow and transparent, and when x of SiOx exceeds 2.0, gas barrier properties may be insufficient.

By using such an optical component, an organic EL display having excellent light extraction properties and high gas barrier properties can be produced.

By using an ionizing radiation curable acrylic resin as the main component of the concavo-convex layer, a concavo-convex layer having high transparency can be formed with high productivity.

As a material for the transparent electrode layer, ITO (Indium-Tin Oxide), In ₂ O ₃ , TiO ₂ , SnO ₂ , and ZnO can be used, and particularly high transparency can be obtained by using ITO. .

By using a phosphorescent compound, an organic EL device having an internal quantum efficiency of about 4 times that of a conventional fluorescent light-emitting organic EL device can be produced.

The optical component manufacturing method of the present invention will be described with reference to FIGS.

First, the gas barrier substrate 3 is produced by laminating the gas barrier layer 2 on the substrate 1. (See Figure 1)

As the stacking method, when the gas barrier layer 2 is a transparent inorganic material (silicon nitride or silicon oxide), for example, chemical vapor deposition (CVD) method, plasma CVD (PECVD) method, sputtering method, ion plating method, Plasma CVD (PECVD) can be used from the viewpoint of being able to form vacuum barrier methods such as electron beam evaporation and resistance heating, laser ablation, etc., and especially to form a gas barrier layer with excellent productivity and quality stability. The method is preferred.

Next, a glass plate is used as the stamper substrate 100, and a positive photoresist 200 is applied to the surface of the glass plate. (See Fig. 2 (a))

The positive type resist has a higher resolution than the negative type resist and is suitable as a material used for a stamper that requires high definition as in the present invention.

In order to improve the adhesion between the photoresist 200 and the glass plate (stamper substrate 100), the surface of the glass plate (stamper substrate 100) may be subjected to vapor treatment with HMDS (hexamethyldisilazane).

Next, the photoresist 200 is exposed at the diffraction limit using a laser (for example, a HeCd laser (wavelength 442 nm) or the like) and an optical system mask (NA (numerical aperture) is 0.89 to 0.91). Then, the positive photoresist 200 is solubilized. (See Fig. 2 (b))

Next, the solubilized photoresist 200 ′ is removed (developed) using an alkaline solution. (See FIG. 2 (c))

Next, a Ni conductive layer 300 is formed on the photoresist 200 ″ by sputtering. (See Fig. 2 (d))

Next, using the Ni conductive layer 300 as an electrode, the Ni plating layer 400 is formed on the Ni conductive layer 300 using a plating method. (See Fig. 2 (e))

Next, the stamper 500 is obtained by removing the stamper substrate 100 and the photoresist 200 ″. (See Fig. 2 (f))

Next, a paste 4 mainly composed of an ionizing radiation curable acrylic resin is laminated on the base material 1 of the gas barrier substrate 3. (See Fig. 3 (b))

As paste 4 having ionizing radiation curable acrylic resin as a main component, paste obtained by diluting UV curable acrylic resin or electron beam curable acrylic resin to a solid content of 40 to 50% using a solvent such as methyl ethyl ketone (MEK). Can be used.

As a method for laminating the paste 4 containing ionizing radiation curable acrylic resin as a main component on the substrate 1, a known die coating method, spin coating method, screen printing method, bar coating method, gravure coating method, or the like may be used. it can.

Next, the stamper 500 is pressed against the paste 4 containing ionizing radiation curable acrylic resin as a main component to form a diffraction grating pattern 4 ′. (See Fig. 3 (c))

Next, the first diffraction grating layer 4 ″ is formed by irradiating the diffraction grating pattern 4 ′ with ionizing radiation. (See Fig. 3 (d))

As the ionizing radiation, ultraviolet rays having a wavelength region of 100 to 380 nm or electron beams having a wavelength region of 100 nm or less can be used.
By using the ultraviolet ray and the electron beam, a diffraction grating layer having a fine pattern of 1 μm or less can be produced in a short time and at a low cost.

In the case of irradiating ultraviolet rays, a carbon arc, a metal halide lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a low pressure mercury lamp, or the like is used, and the ultraviolet rays are irradiated in a wavelength region of 100 to 380 nm, preferably 200 to 300 nm.

When irradiating with an electron beam, various electron beam accelerators such as a dynamitron type, a linear type, a cockroft Walton type, a bandegraph type, a resonant transformer type, an insulated core transformer type, a high frequency type, etc. are used, preferably 100 nm or less, preferably An electron beam is irradiated in a wavelength region of 50 nm or less.

Next, the stamper 500 is removed. (See Fig. 3 (e))

Next, the transparent electrode layer 5 is formed on the gas barrier layer 2. (See Fig. 3 (f))

The thickness of the transparent electrode layer 5 can be 100 to 200 nm.

As a method for forming the transparent electrode layer 5, an ion plating method in which a patterning mask is placed on the gas barrier layer 2 can be used.

Next, the hole transport layer 6 is laminated on the transparent electrode layer 5. (See Fig. 4 (a))

The thickness of the hole transport layer 6 can be set to 40 to 60 nm.

As a method for stacking the hole transport layer 6, a method of vacuum-depositing m-MTDATXA on the transparent electrode layer 5 can be used.

Next, the light emitting layer 7 is formed on the hole transport layer 6. (See Fig. 4 (b))

The thickness of the light emitting layer 7 can be 20-40 nm.

As a method for forming the light emitting layer 7, a method in which m-MTDATXA, ATCBP, and Ir-12 are co-evaporated can be used.

Next, the hole blocking layer 8 is formed on the light emitting layer 7. (See Fig. 4 (c))

The thickness of the hole blocking layer 8 can be 5 to 15 nm.

As a method for forming the hole blocking layer 8, a method of vacuum-depositing bathocuproine on the light emitting layer 7 can be used.

Next, the electron transport layer 9 is formed on the hole blocking layer 8. (See Fig. 5 (d))

The thickness of the electron transport layer 9 can be set to 30 to 50 nm.

As a method for forming the electron transport layer 9, a method of vacuum-depositing Alq 3 (tris (8-hydroxyquinoline) aluminum) on the hole blocking layer 8 can be used.

Next, the back electrode buffer layer 10 is formed on the electron transport layer 9. (See Fig. 5 (e))

The thickness of the back electrode buffer layer 10 can be 0.4 to 0.6 nm.

As a method for forming the back electrode buffer layer 10, a method of vacuum-depositing lithium fluoride on the electron transport layer 9 can be used.

Finally, an organic EL display is obtained by forming the back electrode 11 on the back electrode buffer layer 10. (See FIG. 5 (f))

The thickness of the back electrode 11 can be 100 to 120 nm.

As a method for forming the back electrode 11, a method of vacuum-depositing aluminum on the back electrode buffer layer 10 can be used.

Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited thereto.

Further, the method for measuring the water vapor transmission rate and the oxygen transmission rate of the gas barrier substrate produced in the following examples and comparative examples, the method for measuring the total light transmittance of the gas barrier substrate, the method for measuring the film thickness of the gas barrier layer, and The composition analysis method, the measurement method of the adhesion strength between the base material of the gas barrier substrate and the gas barrier layer, and the moisture resistance and oxidation resistance evaluation method of the organic EL display are as follows.

Water vapor transmission rate of gas barrier substrate (JIS K7129 B method)
Using PERMATRAN W6 manufactured by Modern Control Co., measurement was performed in an atmosphere with an air temperature of 40 ° C. and a relative humidity of 90%.

Oxygen permeability of gas barrier substrate (JIS K7126 B method)
Using an OXTRAN 10 / 40A manufactured by Modern Control Co., Ltd., measurement was performed in an atmosphere having an air temperature of 20 ° C. and a relative humidity of 90%.

Gas barrier layer thickness (JIS K 0121) (X-ray fluorescence analysis)
Using a fluorescent X-ray analyzer (system 3270) manufactured by Rigaku Denki Co., Ltd., a rhodium tube was used as the X-ray source, and measurement was performed under conditions of 50 kV and 50 mA.

Composition of gas barrier layer (ESCA) Method Shimadzu Corporation, ESCA3200 (trade name), Mgα ray source is used as X-ray source, voltage 5 kV, current 30 mA, analyzer transmission energy 10 eV, photoelectron uptake is 0 The analysis was performed under the condition that the collection time of 1 point in 1 eV step was 100 ms.
Further, in order to obtain information in the depth direction of the film, etching was performed 10 times for 60 seconds using a hot cathode type etching ion gun to obtain a depth profile.
The analysis was performed with the detector set on the normal to the surface of the gas barrier layer, and appropriate charge correction was performed.
The composition ratio in the gas barrier layer is the peak area of N, Si, O, and C. The sensitivity correction coefficient of each element (on the basis of 1 s of C, 1 s of O is 2.85, 1 s of N is 1.77, Si 2p was corrected using 0.87), and the average of the depth profiles was defined as the film composition.

Total light transmittance of gas barrier substrate (JIS K 7361-1)
The measurement was performed using a spectrophotometer (Shimadzu autograph spectrophotometer UV-3100PC type) manufactured by Shimadzu Corporation.

Adhesive strength between gas barrier substrate and gas barrier layer (JIS K5600-5-6) (cross-cut method)
On the gas barrier layer side of the gas barrier substrate, 100 grid cuts are made using a cutter guide with a gap interval of 1 mm, and an adhesive tape (Nichiban Co., Ltd., CT24) is stuck on the grid cut surface, After pressurizing with a finger pad and bringing it into close contact with each other, it was peeled off from the surface in a direction of 90 ° at a stretch, and the peeling state of the gas barrier layer was visually confirmed.

Moisture resistance and oxidation resistance evaluation of organic EL display When the organic EL display is lit and stored for 1 year in an atmosphere with a temperature of 40 ° C. and a relative humidity of 90%, the maximum diameter of the non-light emitting part can be maintained at 50 μm or less. Good moisture resistance and oxidation resistance.

Sccm is an abbreviation for standard cubic cm per minute.

<Example 1>
(Production of gas barrier substrate)
First, a 12 μm thick polyethylene terephthalate film (NSC (trade name)) (manufactured by Teijin DuPont Films Ltd.) is mounted in a plasma CVD apparatus (manufactured by Anelva, parallel plate type plasma CVD apparatus, PED-401). Heated to ° C.

Next, the inside of the CVD apparatus was depressurized to an ultimate vacuum of 3.0 × 10 ⁻³ Pa using an oil rotary pump and a turbomolecular pump.

Next, from a gas inlet of the plasma CVD apparatus, tetramethoxysilane gas (TMOS) (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-04) 10 sccm, oxygen gas (Taiyo Toyo Oxygen Co., Ltd., purity 99.9999% or more) 10 sccm, helium gas (Taiyo Toyo Oxygen Co., Ltd., purity 99.999% or more) 30 sccm is introduced, the pressure in the film formation chamber of the plasma CVD apparatus is kept at 33.2 to 33.3 Pa, and the power has a frequency of 90 kHz By applying (input power 150 W), SiOx (x = 1.8) having a film thickness of 150 nm ± 10 nm on the polyethylene terephthalate film (NSC (trade name)) (made by Teijin DuPont Films) having a thickness of 12 μm. Were stacked to obtain a gas barrier substrate.

The water vapor transmission rate (JIS K7129 B method) of the gas barrier substrate was 0.11 g / m ² · day · atm.
The oxygen permeability (JIS K7126 B method) of the gas barrier substrate was 0.10 cc / m ² · day · atm.

The total light transmittance (JIS K 7361-1) of the gas barrier substrate was 75%.

The gas barrier substrate adhesion strength test result (JIS K5600-5-6) is classified as 0 (the cut edge is completely smooth and the gas barrier layer is not peeled), and the adhesion strength between the gas barrier substrate and the gas barrier layer is good. It was confirmed that there was.

(Production of stamper)
First, the surface of a glass plate (manufactured by Corning, 1737 (trade name)) was cleaned with an automatic cleaning device manufactured by Shimada Rika Co., Ltd., and then this glass plate was HMDS (hexamethyldisilazane) (Tokyo) A vapor treatment was performed for 2 minutes at 90 ° C. using steam produced by Oka Kogyo Co., Ltd. (OAP (trade name)).

Next, a photoresist (positive type photoresist) (manufactured by Tokyo Ohka Kogyo Co., Ltd., OFPR-800 (trade name)) is applied to the vapor treated surface of the glass plate at 4000 rpm for 30 seconds using a spin coater manufactured by Yuasa. The film was applied so that the film thickness was in the range of 3 ± 1 μm under the above spin coating conditions, and then pre-baked for 50 minutes at 90 ° C. in a clean oven manufactured by DAITRON.

Next, using a laser interference exposure apparatus, the wavelength is incident on the pre-baked photoresist at an incident angle of 40 degrees from three directions through an optical system mask (NA (numerical aperture) 0.90) having a predetermined pattern. Exposure was performed by irradiation with a 442 nm HeCd laser.

Next, using a 0.3% tetramethylammonium aqueous solution, development processing was performed at 25 ° C. for 60 seconds, and then rinse treatment with ultrapure water was performed for 25 seconds, followed by drying.

Next, in a DC parallel plate type magnetron sputtering apparatus (XM-8 (trade name), manufactured by Va-Rian Co., Ltd.), a Ni target is used as a sputtering target, and an Ar gas having a pressure of 0.3 Pa is used as a sputtering gas. A Ni conductive layer having a thickness of 600 mm was formed on the photoresist by sputtering Ni at a temperature of 5 × 10 ⁻³ Pa and an RF power of 300 W.

Next, the following Ni plating solution was produced.
Nickel sulfamate tetrahydrate ... 500g / L
Boric acid ... 37g / L
pH ... 3.8

Next, the Ni conductive layer is dipped in the Ni plating solution kept at 40 ° C., and plated under the condition of an energization current time integral value of 300 AH, whereby a thickness of 300 μm is formed on the Ni conductive layer. A nickel plating film was formed.

Next, the stamper was obtained by removing the stamper substrate and the photoresist.

(Production of optical parts)
First, using methyl ethyl ketone (MEK), a paste obtained by diluting UV curable acrylic monomer R128H (trade name) (manufactured by Nippon Kayaku Co., Ltd.) to a solid content of 45% by mass on the polyethylene terephthalate film surface of the gas barrier substrate, Using a gravure coater, it was applied to a film thickness of 3 ± 1 μm and then pre-dried at 60 ° C.

Next, after applying the pressure of 1 MPa on the application surface of the ultraviolet curable acrylic resin R128H (trade name) (manufactured by Nippon Kayaku Co., Ltd.) and pressing the stamper for 1 minute, the gas barrier layer forming surface side of the gas barrier substrate The ultraviolet curable acrylic resin was cured by irradiating ultraviolet rays having a wavelength of 250 nm with energy of 750 mJ / cm ² to form a diffraction grating layer, and then the stamper was removed.

Next, a patterning mask is placed on the gas barrier layer, and ITO (indium-tin oxide) with a film thickness of 150 nm ± 12 nm is laminated using a known ion plating method to form a transparent electrode layer. Thus, an optical component was obtained.

(Production of organic EL display)
First, under 3 × 10 ⁻⁴ Pa, m-MTDATXA was vacuum-deposited on the transparent electrode layer (surface temperature 25 ± 1 ° C.) at a deposition rate of 0.2 nm / sec to obtain a positive film thickness of 50 ± 11 nm. A hole transport layer was formed.

Next, under 3 × 10 ⁻⁴ Pa, ATCBP and Ir-12 are deposited on the hole transport layer (surface temperature 25 ± 1 ° C.) at a deposition rate of 0.3 nm / sec and 0.013 nm / sec, respectively. By co-evaporation, a light emitting layer with a thickness of 30 ± 10 nm was formed.

Next, under a vacuum of 3 × 10 ⁻⁴ Pa, bathocuproine is vacuum-deposited on the light emitting layer (surface temperature 25 ± 1 ° C.) at a deposition rate of 0.2 nm / sec, thereby forming a hole with a thickness of 10 ± 5 nm. A blocking layer was formed.

Next, under 3 × 10 ⁻⁴ Pa, Alq3 is vacuum-deposited on the hole blocking layer (surface temperature 25 ± 1 ° C.) at a deposition rate of 0.2 nm / sec to obtain a film thickness of 40 ± 11 nm. An electron transport layer was formed.

Next, under 3 × 10 ⁻⁴ Pa, lithium fluoride is vacuum-deposited on the electron transport layer (surface temperature 25 ± 1 ° C.) at a deposition rate of 0.2 nm / sec to obtain a film thickness of 1 ± 0. A 5 nm back electrode buffer layer was formed.

Finally, under 3 × 10 ⁻⁴ Pa, aluminum is vacuum-deposited on the back electrode buffer layer (surface temperature 25 ± 1 ° C.) at a deposition rate of 1 nm / sec, thereby forming a back electrode having a thickness of 110 ± 10 nm. A layer was formed to obtain an organic EL display.

The evaluation of moisture resistance and oxidation resistance of the organic EL display was good.

<Example 2>
(Production of gas barrier substrate)
First, a 12 μm thick polyethylene terephthalate film (NSC (trade name)) (manufactured by Teijin DuPont Films Ltd.) is mounted in a plasma CVD apparatus (manufactured by Anelva, parallel plate type plasma CVD apparatus, PED-401). Heated to ° C.

Next, the inside of the CVD apparatus was depressurized to an ultimate vacuum of 3.0 × 10 ⁻³ Pa using an oil rotary pump and a turbomolecular pump.

Next, monosilane gas (SiH ₄ ) 10 sccm, ammonia gas (NH ₃ ) 20 sccm, and hydrogen gas (H ₂ ) 400 sccm are introduced from the gas inlet of the plasma CVD apparatus, and the pressure in the film formation chamber of the plasma CVD apparatus is set to 9. On the polyethylene terephthalate film (NSC (trade name)) (made by Teijin DuPont Films Co., Ltd.) having a thickness of 12 μm by applying power having a frequency of 13.56 MHz (input power 300 W) while maintaining the pressure at 9 to 10.1 Pa. Was laminated with SiNx (x = 1.2) having a film thickness of 150 nm ± 10 nm to obtain a gas barrier substrate.

The water vapor transmission rate of the gas barrier substrate (JIS K7129 B method) was 0.10 g / m ² · day · atm.
The oxygen permeability (JIS K7126 B method) of the gas barrier substrate was 0.11 cc / m ² · day · atm.

The total light transmittance (JIS K 7361-1) of the gas barrier substrate was 75%.

The gas barrier substrate adhesion strength test result (JIS K5600-5-6) is classified as 0 (the cut edge is completely smooth and the gas barrier layer is not peeled), and the adhesion strength between the gas barrier substrate and the gas barrier layer is good. It was confirmed that there was.

An optical component and an organic EL display were produced in the same manner as in Example 1 except that the gas barrier substrate was produced.

The obtained organic EL display body had good moisture resistance and oxidation resistance evaluation.

<Comparative example>
A gas barrier substrate, optical component, and organic EL display were produced in the same manner as in Example 1 except that the thickness of the SiOx (x = 1.8) layer in Example 1 was changed to 20 nm ± 10 nm.

The water vapor transmission rate of the gas barrier substrate (JIS K7129 B method) was 2.00 g / m ² · day · atm.
The oxygen permeability (JIS K7126 B method) of the gas barrier substrate was 2.01 cc / m ² · day · atm.

The total light transmittance (JIS K 7361-1) of the gas barrier substrate was 75%.

The gas barrier substrate adhesion strength test result (JIS K5600-5-6) is classified as 0 (the cut edge is completely smooth and the gas barrier layer is not peeled), and the adhesion strength between the gas barrier substrate and the gas barrier layer is good. It was confirmed that there was.

The resulting organic EL display was poor in moisture resistance and oxidation resistance evaluation results.
(When the organic EL display was lit and stored for 6 months in an atmosphere with a temperature of 40 ° C. and a relative humidity of 90%, the maximum value of the diameter of the non-light-emitting portion exceeded 50 μm.)

The optical component and the organic EL display using the optical component of the present invention can be used for various display devices and commercial displays such as billboards and neon using them.

It is sectional drawing for demonstrating the structure of the gas barrier board | substrate of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic EL display body of this invention, the optical component used therewith, and the gas barrier board | substrate used therefor. It is sectional drawing for demonstrating the manufacturing method of the organic EL display body of this invention, the optical component used therewith, and the gas barrier board | substrate used therefor. It is sectional drawing for demonstrating the manufacturing method of the organic EL display body of this invention, the optical component used therewith, and the gas barrier board | substrate used therefor. It is sectional drawing for demonstrating the manufacturing method of the organic EL display body of this invention, the optical component used therewith, and the gas barrier board | substrate used therefor.

Explanation of symbols

1 .... Base material 2 .... Gas barrier layer 3 .... Gas barrier substrate 4 .... Paste mainly composed of ionizing radiation curable acrylic resin 4 '... Diffraction grating pattern 4 "... Diffraction grating layer 5 ... Transparent electrode layer 6 ... Hole transport layer 7 ... ... Emission layer 8 ... Hole blocking layer 9 ... Electron transport layer 10 ... Back electrode buffer layer 11 ... Back electrode 100 ... ... Stamper substrate 200 ... Photoresist 200 '... Solubilized photoresist 200 "... Photoresist 300 ... Ni conductive layer 400 ...・ Ni plating layer 500 ... Stamper

Claims (1)

An organic EL display having an optical article in which an uneven layer is formed on one surface of a gas barrier substrate having a gas barrier layer on at least one surface of a substrate, and a transparent electrode layer is formed on the other surface of the gas barrier substrate Because
An organic EL element containing a phosphorescent compound is formed on the transparent electrode layer, a back electrode is formed on the organic EL element , the gas barrier layer is made of silicon nitride or silicon oxide, and the gas barrier layer An organic EL display having a thickness of 150 nm ± 10 nm .