JP5196743B2 - Processing method and apparatus, and device manufacturing method - Google Patents

Description

  The present invention generally relates to a processing method and apparatus, and more particularly, to a processing method and apparatus for transferring a pattern of a mold as an original to a substrate such as a wafer. The present invention is suitable for a processing method and apparatus using a nanoimprint technology for microfabrication for manufacturing, for example, a semiconductor or MEMS (Mirco Electro-Mechanical Systems).

  Nanoimprint has attracted attention as a technique that can replace a method for forming a fine pattern on a semiconductor device using photolithography using ultraviolet rays, X-rays, or an electron beam. Nanoimprint is a technique for transferring a pattern onto a resist by pressing (imprinting) a mold (template) on which a fine pattern is formed against a substrate such as a wafer coated with a resist (resin material).

  There are several transfer methods for nanoimprint, and a photocuring method has been proposed as one of such transfer methods (see, for example, Patent Document 1). The photocuring method uses an ultraviolet curable resin and a transparent mold, and irradiates ultraviolet rays in a state where the mold is pressed against the resin to sensitize and cure the resin, and then peels the mold.

  With reference to FIG. 9, the transfer of the pattern by the processing apparatus (nanoimprint apparatus) using the conventional photocuring method is demonstrated. First, the XY stage for positioning the wafer at a predetermined position is driven, and the wafer is mounted so that the position (shot) for transferring the pattern on the wafer is located below the nozzle for dropping the resist (photo-curing resin). The placed wafer chuck is moved (step 1001). Then, a predetermined amount of resist is applied to the shot on the wafer (step 1003).

  Next, the XY stage is driven, and the wafer chuck is moved so that the shot in which the resist is dropped faces the mold. Further, the height and inclination of the wafer chuck in the z direction are adjusted by the fine movement stage, and the surface of the wafer shot is adjusted to the reference plane of the processing apparatus (step 1005).

  Next, by driving the linear motor, the mold chuck stage on which the mold chuck for fixing the mold is mounted is lowered, and the mold is pressed against the resist dripped onto the wafer shot (step 1007). Then, it is determined whether the pressing force (impression force) of the mold against the resist is appropriate (predetermined value) (step 1009), and the impressing force of the mold is adjusted to a predetermined value (step 1011).

  After adjusting the stamping force of the mold, the wafer (resist) is irradiated with ultraviolet light from an ultraviolet light source (step 1013). When the ultraviolet light is irradiated for a predetermined time, the linear chuck is driven to raise the mold chuck stage to separate the mold from the wafer (step 1015). Then, in order to apply the resist to the next shot, the XY stage is driven to move the wafer (wafer chuck) (step 1017).

Such a series of steps is repeated until the pattern is transferred to all shots on the wafer (step 1019). When the pattern is transferred to all shots on the wafer, the XY stage is driven to move the wafer to a predetermined position (step 1021). Thereby, the pattern transfer to one wafer is completed.
JP 2000-194142 A

  However, since nanoimprinting requires imprinting of the mold (imprinting process), ultraviolet light irradiation (curing process), and mold release (releasing process) when transferring the pattern to the wafer, it is equivalent to the exposure apparatus. It is very difficult to achieve a high throughput.

  For example, when a pattern is transferred by the above-described step-and-repeat method, if the time required for the stamping process, the curing process, and the releasing process for one shot on the wafer becomes long, it is necessary to transfer the pattern of all shots on the wafer. The time increases proportionally. As a result, there arises a problem that the throughput is lowered. In particular, the relative movement of the mold and the wafer (resist) in the stamping process and the releasing process (contact and separation between the mold and the wafer) is unique to nanoimprinting that is not present in the exposure apparatus. Therefore, shortening the time required for the stamping and releasing of the mold is an issue for improving the throughput of the processing apparatus.

  Accordingly, an object of the present invention is to provide a processing method and apparatus that reduce the overall time required for mold stamping and mold release and realize excellent throughput.

In order to achieve the above object, a processing method according to one aspect of the present invention includes a processing method of pressing a mold on which a pattern is formed and a resin applied to a transfer target to transfer the pattern to the transfer target. a is, from said position (s) available on the transfer member opposes the nozzle for applying a resin to a position facing the mold, the material to be transferred with respect to the pressing direction of the mold or the transfer target body a step of moving in a vertical direction, and the and a step of pressing the said shot on applied resin mold on the transfer member, the pressing step may be started before the moving step is completed It is characterized by.

A processing method according to another aspect of the present invention is a processing method for transferring the pattern to the transferred body by pressing a mold on which the pattern is formed and a resin applied to the transferred body. and step pressed against mold and said resin and said pressing direction of separating by a predetermined distance in the spacing direction opposite said and said mold and the transfer member with respect to the spacing direction of the mold or the transfer target body Moving relative to the vertical direction, and the moving step is started before the separation step is completed.

A processing apparatus according to still another aspect of the present invention is a processing apparatus that presses a mold on which a pattern is formed and a resin applied to a transfer object to transfer the pattern to the transfer object. A mold chuck for holding the transfer object, an actuator for moving the mold chuck in the pressing direction of the transfer object and a separation direction opposite to the pressing direction, a transfer object chuck for holding the transfer object, and the transfer object A processing mode including a stage mounted with a body chuck and moving in a direction perpendicular to the pressing direction, and a nozzle for applying a resin to a shot on the transferred body, and capable of performing the above processing method It is characterized by having.

  A device manufacturing method as still another aspect of the present invention includes a step of transferring a pattern to a transfer target using the above-described processing apparatus, and a step of etching the transfer target having the pattern transferred thereto. It is characterized by.

  Further objects and other features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  ADVANTAGE OF THE INVENTION According to this invention, the processing time and apparatus which reduce the whole time which a mold stamping and mold release require, and implement | achieve the outstanding throughput can be provided.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted.

  FIG. 1 is a schematic cross-sectional view showing a configuration of a processing apparatus 1 as one aspect of the present invention. The processing apparatus 1 is a nanoimprint apparatus that presses a mold on which a pattern is formed against a resin (including a resist) applied to a transfer target body to transfer the pattern to the transfer target body. Here, “pressing the mold against the resin applied to the transfer object” refers to bringing the mold and the resin into contact, but the mold may be brought into contact with the transfer object or not. That is, what is necessary is just to press a mold to resin to such an extent that the shape of the resin before pressing a mold changes after pressing a mold. In this embodiment, the resin is a material that functions as a resist when a pattern is transferred by a mold, or a material that remains on a transfer target after transfer to form a pattern. May be substituted. In this embodiment, the processing apparatus 1 is a UV curable (photocuring method) step-and-repeat nanoimprint apparatus.

  As shown in FIG. 1, the processing apparatus 1 includes a wafer chuck 10, a fine movement stage 11, an XY stage 12, a base surface plate 13, a reference mirror 14, a laser interferometer 15, a column 16, and a top plate. 17. Further, the processing apparatus 1 includes a mold 18, a mold chuck 19, a mold chuck stage 20, an ultraviolet light source 21, a collimator lens 22, a guide bar plate 23, and a guide bar 24. Further, the processing apparatus 1 includes an actuator 25, a nozzle 26, a beam splitter 27, and an imaging system 28.

  Wafer chuck 10 holds wafer WF. The fine movement stage 11 has a function of correcting (adjusting) the position, z position, and tilt of the wafer WF in the θ (rotation around the z axis) direction. Fine movement stage 11 is arranged on XY stage 12 for positioning wafer WF at a predetermined position.

  The base surface plate 13 places the XY stage 12 thereon. The reference mirror 14 reflects the light from the laser interferometer 15 in order to measure the position of the fine movement stage 11. The support column 16 stands on the base surface plate 13 and supports the top plate 17.

  The mold 18 has a surface (pattern surface) on which a pattern to be transferred to the wafer WF is formed, and is fixed to the mold chuck 19. The mold chuck 19 is placed on the mold chuck stage 20. The mold chuck stage 20 has a function of correcting (adjusting) the position and inclination of the mold 18 (mold chuck 19) in the θ (rotation around the z axis) direction. The mold chuck 19 and the mold chuck stage 20 have an opening (not shown) for guiding ultraviolet light irradiated from the ultraviolet light source 21 through the collimator lens 22 to the mold 18.

  The guide bar plate 23 fixes the guide bar 24. The guide bar 24 penetrates the top plate 17, one end is fixed to the mold chuck stage 20, and the other end is fixed to the guide bar plate 23.

  The actuator 25 is a linear actuator composed of an air cylinder or a linear motor, and drives the guide bar 24 in the z direction. As a result, the mold 18 held by the mold chuck 19 can be pressed against the wafer WF (imprint), or the mold 18 can be separated from the wafer WF (release).

  The nozzle 26 drops a liquid UV curable resin (hereinafter referred to as “resin”) onto the surface of the wafer WF. The UV curable resin is a material that cures when irradiated with ultraviolet light, and is a viscous material or liquid before being irradiated with ultraviolet light. The beam splitter 27 is disposed in the optical path of the ultraviolet light source 21 and separates the ultraviolet light from the ultraviolet light source 21. The imaging system 28 observes the pressing state between the mold 18 and the wafer WF (resin) using the ultraviolet light separated by the beam splitter 27. An object to be measured (measured) as an element for determining the pressing state between the mold 18 and the wafer WF (resin) is, for example, a contact area or a contact region between the mold 18 and the resin applied on the wafer WF. .

  With reference to FIG. 2, the pattern transfer by the processing apparatus 1 will be described. FIG. 2 is a flowchart for explaining a processing method according to one aspect of the present invention. Unlike the conventional processing method (FIG. 9), the processing method of the present invention executes part of the processing operations (steps) in the stamping step and the release step in parallel. Specifically, in the processing method of the present invention, in the stamping process, before the alignment of the wafer WF and the mold 18 (that is, the shot on the wafer WF is opposed to the mold 18) is completed, the resin and the mold 18 are processed. Start pressing with. In the present embodiment, the mold 18 (the mold chuck 19 and the mold chuck stage 20) starts to descend while the fine movement stage 11 and the XY stage 12 are moving. Further, the processing method of the present invention is such that, in the mold releasing step, before the separation between the mold 18 pressed against the resin and the wafer WF (resist) is completed, the resin is applied to the next shot and the wafer WF and the mold 18 are separated. Start alignment. In the present embodiment, the movement of the wafer WF (XY stage 12) is started while the mold 18 (the mold chuck 19 and the mold stage 20) is raised.

  In the present embodiment, the resin applied to the wafer WF is pressed against the mold 18 by lowering the mold 18. However, the resin applied to the wafer WF and the mold 18 may be pressed by raising the wafer WF, and the mold 18 and the wafer WF are relatively moved in the pressing direction (Z direction in FIG. 1). You can do it. Similarly, in this embodiment, the mold 18 is raised to separate the resin applied to the wafer WF from the mold 18. However, the resin applied to the wafer WF and the mold 18 may be separated by lowering the wafer WF, and the mold 18 and the wafer WF are relatively moved in the separation direction (Z direction in FIG. 1). You can do it. In the present embodiment, the wafer WF and the mold 18 are aligned by moving the wafer WF. However, by moving the mold 18, the wafer WF and the mold 18 may be aligned, and the mold 18 and the wafer WF are relatively pressed in the direction perpendicular to the pressing direction or the separation direction (see FIG. 1). XY direction).

  Referring to FIG. 2, first, the XY stage 12 is driven, and the wafer WF is moved so that the shot on the wafer WF is positioned below the nozzle 26 (step 101). Then, a predetermined amount of resin (including resist) is applied to the shot on the wafer WF through the nozzle 26 (step 103).

Next, the wafer WF is moved in the XY direction (direction perpendicular to the pressing direction) so that the shot on the wafer WF faces the mold 18 (step 105). In other words, the positions of the shot on the wafer WF and the mold 18 are matched. Specifically, first, the XY stage 12 is driven, and the position of the shot on the wafer WF and the mold 18 is aligned with a relatively rough accuracy (first accuracy) (first alignment) . Next, the fine movement stage 11 is driven, and the position of the shot on the wafer WF and the mold 18 is aligned with high accuracy (second accuracy having higher accuracy than the first accuracy) (second alignment) . The XY stage 12 adjusts the position of the wafer WF in the XY direction, and the fine movement stage 11 adjusts the position and inclination of the wafer WF in the Z direction. That is, before the alignment (movement) between the mold and the wafer (shot) in the XY plane is completed, relative movement in the Z direction (movement in the pressing direction) between the mold and the wafer is started. Here, it is desirable that the mold and the wafer are aligned in the XY plane (relative movement in the XY directions) even after the resin applied on the wafer and the mold come into contact with each other.

  In addition, before the movement of the wafer WF (positioning of the wafer WF and the mold 18) is completed, the mold 18 is lowered in the Z direction (pressing direction), and the resin applied to the wafer WF and the pressing of the mold 18 are started. (Step 107). Specifically, the actuator 25 is driven to lower the mold chuck stage 20 and press the mold 18 against the resin on the wafer WF. When the mold 18 comes into contact with the resin on the wafer WF, it is determined whether the pressing force (imprinting force) of the mold 18 against the resin is appropriate (predetermined value) (step 109). The value is adjusted (step 111). For example, the pressing force of the mold 18 is adjusted by changing the pressing amount of the mold 18 against the wafer WF (resin) via the actuator 25. Further, the imprinting force of the mold 18 may be adjusted by changing the inclination of the mold 18 based on the outputs of a plurality of load cells (not shown) arranged on the mold chuck 19 (mold chuck stage 20). The specific timing for starting the pressing of the resin applied to the wafer WF and the mold 18 will be described later in detail.

  After adjusting the stamping force of the mold 18, the wafer WF (resin coated on the wafer WF) is irradiated with ultraviolet light from the ultraviolet light source 21 (step 113).

  When the ultraviolet light is irradiated for a predetermined time, the mold 18 is raised in the Z direction (separation direction), and the mold 18 pressed against the resin on the wafer WF is separated from the resin (step 115). Specifically, the actuator 25 is driven to raise the mold chuck stage 20, and the mold 18 is separated from the resin on the wafer WF.

  Further, before the separation between the mold 18 and the resin is completed, the XY stage 12 is driven to apply the resin to the next shot on the wafer WF, and the wafer WF is moved in the XY direction (perpendicular to the separation direction). (Direction) is started (step 117). The specific timing for starting the movement of the wafer WF will be described later in detail.

  Such a series of steps is repeated until the pattern is transferred to all shots on the wafer WF (step 119). When the pattern is transferred to all shots on the wafer WF, the XY stage 12 is driven to move the wafer WF to a predetermined position (step 121).

  Here, with reference to FIG. 3, the timing for starting the pressing of the resin and the mold 18 in Step 107 and the timing for starting the movement of the wafer WF in Step 117 will be described. FIG. 3 focuses on the movement of the wafer WF (XY stage 12) in the XY direction (direction perpendicular to the pressing direction or the separation direction) and the raising / lowering operation of the mold 18, and changes in the movement speed of the wafer WF with respect to time and It is a figure which shows the change of the moving speed (elevating speed) of the mold. 3A corresponds to the conventional example shown in FIG. 9, and FIG. 3B corresponds to the processing method shown in FIG. In FIG. 3, the adjustment of the stamping force of the mold 18 (steps 109 and 111 in FIG. 1, steps 1009 and 1011 in FIG. 9) is omitted for the sake of simplicity.

  Comparing FIG. 3A and FIG. 3B, in the conventional example, the movement of the wafer WF and the movement of the mold 18 are continued (continuous). On the other hand, in the processing method of the present invention, in the stamping process, the lowering M1 of the mold 18 in Step 107 is started at the time tx when the moving speed W1 of the wafer WF in Step 105 starts to decelerate. That is, when the relative movement speed between the wafer WF and the mold 18 is in a decelerating state, the resin on the wafer WF and the mold 18 are pressed. As described above, the movement of the wafer WF in step 105 and the lowering (pressing) of the mold 18 in step 107 are partially executed in parallel (that is, step 105 and step 107 at least partially overlap in time). .

  Further, in the mold release process, the movement W2 of the wafer WF in step 117 is started at the time ty when the movement speed (elevating speed) M2 of the mold 18 in step 115 starts to decelerate. That is, when the moving speed (elevating speed) of the mold 18 is decelerated, the relative movement (XY direction) between the wafer WF and the mold 18 is started. As described above, the mold 18 is lifted (separated) in step 115 and the wafer WF is moved in step 117 partially in parallel (that is, step 115 and step 117 overlap at least partially in time). .

  As a result, as shown in FIG. 3B, the time required for pattern transfer for one shot can be shortened. Specifically, the time Ta in which the steps 105 and 107 are executed in parallel in the stamping process and the time Tb in which the steps 115 and 117 are executed in parallel in the releasing process are shortened by the sum (time Ts). be able to.

  When the time required for the lowering M1 of the mold 18 is shorter than the time (Ta) in which the moving speed W1 of the wafer WF is decelerated, the pressing of the mold 18 (step 107) is started, and the coarse movement of the XY stage 12 is started. You may delay until the operation is completed. Thereby, the fine movement operation by the fine movement stage 11 and the pressing of the mold 18 (step 107) are executed in parallel. In other words, when the alignment of the mold 18 and the shot on the wafer WF by the XY stage 12 is completed, the pressing (lowering) of the mold 18 is started. The completion of the coarse movement operation of the XY stage 12 can be easily known by using, for example, a positioning completion signal generated by the coarse movement driver of the XY stage 12.

  As described above, the processing apparatus 1 performs a part of the process of transferring the pattern of the mold 18 on one shot on the wafer WF in parallel, thereby reducing the transfer time required for one shot and throughput. Can be improved.

  FIG. 4 is a diagram schematically illustrating the movement trajectory of the mold 18 in the stamping process and the mold releasing process. 4A shows the movement trajectory of the mold 18 from the wafer side in Step 107, and FIG. 4B shows the movement trajectory of the mold 18 from the wafer side in Step 115.

  Referring to FIG. 4A, in the stamping process, in the conventional example (FIG. 9), the mold 18 shows a locus (dashed line) from Pa to Pb and Pb to Pc. On the other hand, in the processing method shown in FIG. 2, a case is considered in which pressing of the mold 18 (step 107) is executed in parallel (parallel processing) just before the movement of the wafer WF in the XY direction (step 105). In this case, if the time required for lowering the mold 18 is short, the movement of the wafer WF (XY stage 12) in the XY directions is continued even after the pressing of the mold 18 to the wafer WF (resin) is completed. Therefore, when the patterns are transferred while being superimposed, there is a possibility that the existing pattern is destroyed.

  Therefore, in the present embodiment, the remaining movement amount (remaining amount) relative to the total movement amount in the XY direction of the wafer WF (wafer stage 12) from the start point Px at which the parallel processing of Step 105 and Step 107 is started, and the mold 18 are performed. Interpolation drive is performed with the amount of movement in the Z direction. That is, linear interpolation or circular interpolation is performed between the movement amount of the mold 18 (wafer WF) in the XY direction in step 107 and the remaining amount with respect to the total movement amount of the relative movement of the wafer WF and the mold 18 in step 105. As a result, the lowering of the mold 18 (movement in the Z direction) and the movement of the wafer WF are completed at the same time, and the destruction of the existing pattern can be prevented. Interpolation driving is a general-purpose motor control technique used in multi-axis control such as robots, and detailed description thereof is omitted here.

  The broken line shown in FIG. 4A shows the movement locus of the mold 18 when linear interpolation is performed, and the solid line shown in FIG. 4A shows the movement locus of the mold 18 when circular interpolation is performed. Circular interpolation is preferable because the mold 18 can finally be brought into perpendicular contact with the wafer WF. If there is no existing pattern (transferred shot) around the shot on the wafer WF, if the resin (resist) applied to the wafer WF is liquid, even after the pressing of the mold 18 is completed. The wafer WF can be moved in the XY directions. Therefore, pressing of the mold 18 (movement of the pressing direction (Z direction) of the mold 18 or the wafer WF) may be completed in the resin applied to the wafer WF. In other words, the mold 18 may be moved obliquely with respect to the wafer WF in the resin applied to the wafer WF in step 107. Thereby, the start point Px which starts the parallel processing of step 105 and step 107 can be accelerated.

  Referring to FIG. 4B, in the mold release process, in the conventional example (FIG. 9), the mold 18 shows a trajectory (dotted line) from Pd to Pe and from Pe to Pf. On the other hand, in the processing method shown in FIG. 2, a case is considered in which the movement of the wafer WF in the XY direction (step 117) is executed in parallel (parallel processing) just before the separation of the mold 18 (step 115) ends. In this case, if the parallel processing starts too early, the wafer WF (XY stage 12) moves in the XY direction while the mold 18 and the resin on the wafer WF are partially in contact with each other. The pattern may be destroyed.

  Therefore, the mold 18 rises to a distance Pd to Py that is shorter than the distance Pd to Pe after the mold 18 and the wafer WF have been released and is not completely in contact with the resin on the wafer WF. After (moving), the movement of the wafer WF in the XY direction is started. Also, consider a case where the movement distance (movement amount) of the wafer WF in the XY direction is small and the movement of the wafer WF in the XY direction is finished before the mold 18 is raised. In this case, as in the stamping step, the remaining movement amount (remaining amount) relative to the total movement amount in the Z direction of the mold 18 and the movement of the wafer WF in the XY direction from the parallel processing start point Py in the mold release step. Interpolation drive may be performed depending on the amount. That is, the remaining amount with respect to the total movement amount of movement of the mold 18 (wafer WF) in the Z direction (pressing direction) in step 115 and the relative movement amount of the wafer WF and the mold 18 in step 117 are linearly interpolated or circular arcs. Interpolation may be performed.

  The broken line shown in FIG. 4B shows the movement locus of the mold 18 when linear interpolation is performed, and the solid line shown in FIG. 4B shows the movement locus of the mold 18 when circular interpolation is performed. In the circular interpolation, since the movement locus of the mold 18 when starting interpolation driving becomes more perpendicular to the wafer WF, the position of the start point Py can be made closer to the wafer WF side, and the time for parallel processing can be further increased. It has the effect that many can be secured.

  As described above, the parallel processing of the raising / lowering (pressing and releasing) of the mold 18 and the movement of the wafer WF in the X and Y directions is interpolated, so that the pattern in the pressing or separating of the mold 18 and the wafer WF (resin) is changed. Destruction can be prevented.

  In the embodiment described above, the parallel processing of the separation between the mold 18 and the wafer WF (step 115) and the movement of the wafer WF in the XY direction (step 117) in the mold release process is performed at the position of the mold 18 (FIG. 4B). Start based on position Py). However, it is necessary to change the position Py depending on the thickness of the resin applied to the wafer WF or the wafer WF. Therefore, in the following, the parallel processing of the separation between the mold 18 and the wafer WF (step 115) and the movement of the wafer WF in the XY direction (step 117) in the mold release process is based on the load acting on the mold 18 or the wafer WF. Start. The load acting on the mold 18 or the wafer WF can be detected by a load cell or the like.

  FIG. 5 is a diagram showing the time change of the load acting on the mold 18 in the mold release process, where the vertical axis shows the load acting on the mold 18 and the horizontal axis shows the time. In the present embodiment, the load acting on the mold 18 will be described as an example.

  Referring to FIG. 5, the load that was Fa after the stamping process and the curing process decreases to 0 when the mold 18 rises in the mold release process, and changes from a compressive force to a tensile force. The load acting on the mold 18 reaches 0 when the load (compression force) Fb reaches the maximum load (tensile force) Fc and the mold 18 is completely separated from the resin on the wafer WF. In this embodiment, after the load reaches the maximum load Fc, parallel processing is started when the load (tensile force) Fd becomes zero or near zero. In other words, a load acting on the mold 18 (wafer WF) is detected, the load is changed from a compressive force to a tensile force, and parallel processing is performed when the absolute value of the load reaches a threshold value (Fd in this embodiment). Start. As a result, even if transfer conditions such as the thickness of the wafer WF and the resin applied to the wafer WF change, after the mold 18 is completely separated from the wafer WF (resin), the mold 18 is lifted and the wafer WF is moved in the XY direction. The movement to can be processed in parallel.

  Note that when a load (load change) acting on the mold 18 (wafer WF) is used, the load may be erroneously detected due to hysteresis or noise of the load cell. Therefore, in the following, based on the pressing state between the mold WF and the resin on the wafer WF, the separation between the mold 18 and the wafer WF in the mold release process (step 115) and the movement of the wafer WF in the XY direction (step 117). Start parallel processing.

  FIG. 6 is a view showing an observation screen of the pressing state of the mold WF and the resin on the wafer WF by the imaging system 28 of the processing apparatus 1. In FIG. 6, 281 indicates a field of view, and 181 indicates a transfer area of the mold 18. Sa to Sc indicate ranges where the mold 10 is in contact with the resin on the wafer WF. That is, the pressed state between the mold WF and the resin on the wafer WF is a contact area between the mold WF and the resin in the present embodiment.

  After the curing process is completed, the observation image observed by the imaging system 28 changes in the order of, for example, FIG. 6A, FIG. 6B, and FIG. 6C as the mold 18 rises in the mold release process. To do. When the mold 18 is completely separated from the resin (wafer WF), the contact between the mold 18 and the resin is eliminated, so that the range (contact area) where the mold 10 is in contact with the resin eventually disappears. Accordingly, the range (contact area) where the mold 18 and the resin are in contact is observed. For example, when the contact area becomes 0 by image processing, the mold 18 rises in the mold release process and the wafer is in the XY direction. It is possible to set the timing for starting the parallel processing of the movements. Accordingly, the timing for starting the parallel processing of the rise of the mold 18 and the movement of the wafer in the XY direction in the mold release process is set more accurately than the field using the load (load change) acting on the mold 18 (wafer WF). be able to.

  Thus, the processing apparatus 1 and the processing method of the present invention start relative pressing between the mold 18 and the wafer WF (resin) before the relative movement of the mold 18 and the wafer WF in the XY directions is completed. To do. Moreover, the processing apparatus 1 and the processing method of the present invention start relative movement of the mold 18 and the wafer WF in the XY directions before the separation between the mold 18 and the wafer WF (resin) is completed. As a result, the processing apparatus 1 and the processing method of the present invention reduce the overall time required to press and separate the mold 18 when transferring the pattern of the mold 18 to the wafer WF, and to move the wafer WF in the XY direction. Can achieve excellent throughput. In addition, the structure of the processing apparatus 1 shown in FIG. 1 is an example, and should just have the processing mode which can perform the processing method mentioned above. In other words, a processing apparatus having a processing mode capable of performing the above-described processing method also constitutes one aspect of the present invention.

  Next, an embodiment of a device manufacturing method using the processing apparatus 1 is described with reference to FIGS. FIG. 7 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, etc.). Here, the manufacture of a semiconductor chip will be described as an example. In step 1 (circuit design), a device circuit is designed. In step 2 (mold production), a mold on which the designed circuit pattern is formed is produced. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer using a mold and a wafer. Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 4. The assembly process (dicing, bonding), packaging process (chip encapsulation), and the like are performed. Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 8 is a detailed flowchart of the wafer process in Step 4. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist process), a resist (resin) is applied to the wafer. In step 16 (transfer), the processing device 1 presses the mold against the resist to transfer the circuit pattern. In step 17 (etching), portions other than the transferred circuit pattern are removed. In step 18 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. According to such a device manufacturing method, a device can be manufactured with higher productivity than in the past. As described above, the device manufacturing method using the processing apparatus 1 and the resulting device also constitute one aspect of the present invention.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist. For example, although the example applied to the nanoimprint of a photocuring method was shown, it can apply to the nanoimprint of a heat cycle method, and can obtain the same effect.

It is a schematic sectional drawing which shows the structure of the processing apparatus as one side surface of this invention. It is a flowchart for demonstrating the processing method as 1 side surface of this invention. In the processing method shown in FIG. 2, paying attention to the movement of the wafer in the XY direction and the raising / lowering operation of the mold, it is a diagram showing the change in the moving speed of the wafer and the change in the moving speed (elevating speed) of the mold with respect to time. It is a figure which shows typically the movement locus | trajectory of the mold in a stamping process and a mold release process. It is a figure which shows the time change of the weight which acts on a mold in a mold release process. It is a figure which shows the observation screen of the press state of the mold and resin on a wafer by the imaging system of the processing apparatus shown in FIG. It is a flowchart for demonstrating manufacture of devices (semiconductor chips, such as IC and LSI, LCD, CCD, etc.). 8 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 7. It is a flowchart for demonstrating the transcription | transfer of the pattern by the conventional processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing apparatus 10 Wafer chuck 11 Fine movement stage 12 XY stage 13 Base surface plate 14 Reference mirror 15 Laser interferometer 16 Support column 17 Top plate 18 Mold 19 Mold chuck 20 Mold chuck stage 21 Ultraviolet light source 22 Collimator lens 23 Guide bar plate 24 Guide bar 25 Actuator 26 Nozzle 27 Beam splitter 28 Imaging system WF Wafer

Claims (13)

A processing method of transferring the pattern to the transferred body by pressing a mold on which a pattern is formed and a resin applied to the transferred body,
Wherein the position of the shot on the body to be transferred nozzle opposed to applying a resin to a position facing the mold, the material to be transferred in the direction perpendicular to the pressing direction of the mold or the transfer target body and the step of moving,
Pressing the resin applied to the shot on the transferred body and the mold,
The processing method according to claim 1, wherein the pressing step is started before the moving step is completed.   2. The processing method according to claim 1, wherein the pressing step is started when a relative moving speed between the transfer object and the mold in the moving step is decelerated. 3. 2. The pressing step is started when a relative movement amount in a direction perpendicular to the pressing direction between the transfer object and the mold in the moving step reaches a predetermined value. The processing method described. The pressing step moves the mold or the transfer target in the pressing direction,
A first position of the mold as viewed from the material to be transferred at the start of the pressing step,
And a second position of the mold as viewed from the material to be transferred at the end of the moving step,
The processing method according to claim 1 , wherein linear interpolation or circular interpolation is performed within a plane including the pressing direction . 5. The processing method according to claim 4 , wherein the pressing step moves the mold or the transferred body so that the mold and the resin are partially in contact before the moving step is completed. A processing method of transferring the pattern to the transferred body by pressing a mold on which a pattern is formed and a resin applied to the transferred body,
Separating the mold pressed against the resin and the resin by a predetermined distance in a separation direction opposite to the pressing direction ;
Wherein and a step of relatively moving in a direction perpendicular to said mold and the transfer member with respect to the spacing direction of the mold or the transfer target body,
The processing method, wherein the moving step is started before the separation step is completed. The separation step moves the mold or the transfer target in the separation direction,
The processing method according to claim 6 , wherein the moving step is started when a moving speed of the mold or the transfer target in the separating step is decelerated. A step of detecting a load acting on the mold or the transfer object;
The processing method according to claim 6 , wherein the moving step is started when the load detected in the detecting step changes from a compressive force to a tensile force and the absolute value of the load reaches a threshold value. The separation step moves the mold or the transfer target in the separation direction,
The processing method according to claim 6 , wherein the moving step is started when a moving amount of the mold or the transfer target in the separating step reaches a predetermined value. The separation step moves the mold or the transfer target in the separation direction,
A first position of the mold when viewed from the transferred body at the start of the moving step;
A second position of the mold when viewed from the transfer object at the end of the separation step;
The processing method according to claim 6 , wherein linear interpolation or circular interpolation is performed within a plane including the separation direction . Detecting the contact area between the mold and the resin;
The processing method according to claim 6 , wherein the moving step is started when the contact area detected in the detecting step disappears. A processing device that presses a mold on which a pattern is formed and a resin applied to a transfer object to transfer the pattern to the transfer object,
A mold chuck for holding the mold;
An actuator for moving the mold chuck in a pressing direction of the transfer target body and a separation direction opposite to the pressing direction;
A transferred object chuck for holding the transferred object;
A stage mounted with the transfer body chuck and moving in a direction perpendicular to the pressing direction;
A nozzle for applying a resin to a shot on the transfer object,
Processing apparatus characterized by having a processing mode that can perform processing method as claimed in any one of claims 1 to 11. Using the processing apparatus according to claim 12 to transfer a pattern to a transfer target;
And a step of etching the transferred body onto which the pattern has been transferred.