JP5192854B2 - Phosphor and display panel using the same - Google Patents

Description

  The present invention relates to a phosphor, and more particularly, a display device or a light source using the phosphor, particularly a thin-film or powder phosphor used for an electroluminescence display device, a field emission display, a field emission lamp, a white LED, or the like. And a display panel using this phosphor.

  Conventionally, cold cathode fluorescent lamps (CCFLs) have been used mainly for liquid crystal backlights and lighting applications.

  However, when fluorescent lamps are downsized, luminous efficiency is drastically decreased and power consumption efficiency is deteriorated. In addition, since mercury is used, there is a problem that an environmental load is large.

  In contrast, a field emission display (FED), or a liquid crystal backlight or illumination light source is used as a display application that uses light emission when a phosphor is irradiated with an electron beam emitted from a cold cathode electron source. As a result, field emission lamps (FEL) have attracted attention.

  The phosphors used in these FEDs and FELs utilize light emission (cathode luminescence) when an electron beam is irradiated onto the phosphors, similarly to a cathode ray tube (CRT).

  Further, there is electroluminescence (EL) as a method for causing a phosphor to emit light with a carrier accelerated in a high electric field. In particular, a display using this EL as a display is generally called an electroluminescent display (ELD).

  Furthermore, there is photoluminescence (PL) as a method for obtaining light emission with a long wavelength by irradiating a phosphor with ultraviolet light or blue light with a short wavelength. Among the PLs, particularly, development research in the field of white LEDs (W-LEDs) has been actively conducted.

  FED, FEL, ELD, and W-LED are all common in that a phosphor material is used. Moreover, there exist a thin film or powder as a form of the fluorescent substance used for FED, FEL, ELD, and W-LED.

As such a phosphor material, phosphors based on strontium sulfide (SrS) or calcium sulfide (CaS) have been intensively researched and developed because of their high luminous efficiency and high brightness. (For example, refer to Patent Documents 1 and 2).
Japanese Patent Laid-Open No. 08-102359 Japanese Patent Application Laid-Open No. 09-274991

  By the way, to date, phosphor materials based on strontium sulfide (SrS), calcium sulfide (CaS), etc., are chemically unstable materials that have strong chemical reactivity and are hygroscopic, and intrude into water. Has not yet been put to practical use.

  One technique for increasing the durability of such a phosphor material is to stack a hygroscopic material such as strontium sulfide (SrS) with a moisture-resistant material thin film such as zinc sulfide (ZnS). For example, a multilayer thin film of ZnS / SrS: Ce / ZnS / SrS: Ce /.../ ZnS has been reported (R. H. Mauch et. Al. 1992 SID International Sympo. (1992) p.178).

  Here, the indication of strontium sulfide: cerium / zinc sulfide (SrS: Ce / ZnS) includes a strontium sulfide (SrS) layer doped with cerium (Ce) serving as a light emission center and an undoped zinc sulfide (ZnS). ) Layer.

  However, in the production of this strontium sulfide: cerium / zinc sulfide (SrS: Ce / ZnS) multilayer film, for example, when vacuum deposition is used, strontium sulfide: cerium (SrS: Ce) is 500 ° C. or higher and zinc sulfide ( ZnS) needs to have a substrate temperature of 200 ° C. or less, and the optimum substrate temperatures of the respective materials are greatly different, which causes problems such as yield and cost in manufacturing. In addition to this, in the case of a multilayer film, distortion may occur at the interface between different materials, or intrusion of moisture, etc., which may lead to damage of the laminated film if peeling occurs. There is.

  For example, in the case of strontium sulfide: cerium / zinc sulfide (SrS: Ce / ZnS), the band gaps of strontium sulfide (SrS) and zinc sulfide (ZnS) are 4.3 eV and 3.6 eV, respectively, and are excited. The band gap of strontium sulfide: cerium (SrS: Ce), which is the phosphor material to be used, is wider than that of zinc sulfide (ZnS) not doped with the luminescent center material. For this reason, there has been a problem that the excited carriers are likely to recombine in the narrow gap zinc sulfide (ZnS) region, and the light emission efficiency is likely to be reduced.

  Therefore, the present invention has a high luminous efficiency and can be produced (formed) easily and inexpensively. In particular, a thin-film or powder phosphor excellent in durability and reliability, and the phosphor are used. An object is to provide a display panel.

The phosphor according to one aspect of the present invention includes a first phosphor material including a chemically unstable first host material, and a first phosphor material that covers the periphery of the first phosphor material and is chemically stable. have a second phosphor material comprising a second host material is larger band gap than the first phosphor material SrS: a Ce, the second phosphor material SrGa ₂ S ₄ or SrGa ₂ S ₄ : Ce, Mn .

  The first phosphor material may be ultrafine particles having a particle size of 1 to 10 nm.

    A display panel according to one aspect of the present invention uses any of the phosphors described above.

  According to the present invention, it is possible to produce (form) easily and inexpensively with high luminous efficiency, and in particular, a thin-film or powder phosphor excellent in durability and reliability, and a display using the same A specific effect that a panel can be provided is obtained.

  Hereinafter, embodiments in which the phosphor of the present invention and a display panel using the phosphor are applied will be described.

  In the present embodiment, a chemically unstable phosphor is embedded in a chemically stable material having a larger band gap than that of the phosphor, while ensuring high chemical stability. A phosphor having luminous efficiency is realized.

In the present embodiment, the notation of the base material is defined as follows. The phosphor material is usually expressed as “matrix material: luminescent center material”. For example, in strontium sulfide: cerium (SrS: Ce), the base material is strontium sulfide (SrS), and the emission center material is cerium (Ce). In this case, the luminescent center material is usually present in the base material in the form of ions, and in this case, it is present as cerium ions (Ce ³⁺ ). In such a case, in this embodiment, all the emission center materials are described in a unified manner by element names (Ce in this example). This also applies to the notation in the claims.

In addition, as a form of doping of the luminescent center material, an element having an element name (Ce in this example) may be contained. Examples of the form include cerium chloride (CeCl ₃ ) and cerium fluoride (CeF). ₃ ) Although there is dicerium trisulfide (Ce ₂ S ₃ ) and the like, the form is not particularly limited.

  In the present embodiment, a phosphor material having a hygroscopic and chemically unstable base material such as strontium sulfide (SrS) or calcium sulfide (CaS) is more banded than these strontium sulfide (SrS) and calcium sulfide (CaS). It is embedded in a material having a large gap (wide gap) and chemically stable and moisture resistance.

  As a result, it is possible to provide a phosphor in the form of a thin film or powder that has high luminous efficiency, can be easily and stably manufactured, and is excellent in durability and reliability.

To realize such a phosphor, in the present embodiment, the base material of the wide gap _{Sr x Ca 1-x (Ga} y Al 1-y) 2 S 4 (x = 0~1, y = 0-1), the host material of the phosphor is strontium sulfide (SrS), calcium sulfide (CaS), or magnesium magnesium sulfide (Zn _x Mg _1-x S (x = 0.50 to 0.95)). One form of material selected from the compositions shown is embedded.

In this case, if the embedded phosphor is strontium sulfide: cerium (SrS: Ce), strontium sulfide: copper (SrS: Cu), or calcium sulfide: copper (CaS: Cu), blue to green light emission can be obtained. , Strontium sulfide: europium (SrS: Eu), or calcium sulfide: europium (CaS: Eu), red light emission can be obtained, and zinc magnesium sulfide: manganese (Zn _x Mg _1-x S: Mn (x = 0.0)). 50 to 0.95)), green to orange light emission can be obtained.

Already, non-patent literature (TE Peters and JA Baglio: J. Electrochem. Soc., 119,
230 (1972)), SrGa ₂ S ₄ and CaGa ₂ S ₄ have moisture resistance because they are not hydrolyzed compared to SrS and CaS, and are excellent in terms of chemical stability. It is known to have properties.

In the _Sr x _{Ca 1-x} where increased performance range of this composition _{(Ga y Al 1-y)} 2 S 4 (x = 0~1, y = 0~1), the same crystal structure (orthorhombic D _2h ^24_Fddd ) is already known to make a solid solution in the above x and y range (PC Donohue and JE Hanlon: J. Electrochem. Soc., 121, 137 (1974)). For this reason, these materials have similar chemical and physical properties, and the same manufacturing method can be applied in the above ranges of x and y.

Furthermore, as luminescent colors of materials that have not been put into practical use because of their hygroscopicity, for example, strontium sulfide: cerium (SrS: Ce) and strontium sulfide: copper (SrS: Cu) emit light from blue to green (S Tanaka et. Al., Digest of 1985 SID International Symposium (1985) 218. and W. Lehmann: J. Electrochem. Soc., 117, 1389 (1970)), strontium sulfide: europium (SrS: Eu) Red (William, M. Yen and Marvin J. Weber eds. “INORGANIC PHOSPHORS” CRC Press (2004) 206), red if calcium sulfide: europium (CaS: Eu) (existing S. Tanaka et. Al. , Digest of 1985 SID International Symposium (1985) 218), Zn _x Mg _1-x S: Mn (x = 0.50-0.95), green to orange (A. Mikami et. Al., ^{Proc. Of 8 th International Workshop on} Electroluminescence (1996) 369)) to become that It is already known.

  For this reason, in addition to the emission of the phosphor material based on the embedded strontium sulfide (SrS), calcium sulfide (CaS), etc., an appropriate emission center material is also used for the matrix material having a wide gap on the surrounding material side. It is possible to emit light by doping, and it is possible to obtain light emission in which both light emissions are added and mixed. Examples of the doping material for forming the luminescent center in the surrounding wide gap base material include various transition elements and rare earth elements. Manganese (Mn), cerium (Ce), europium (Eu), or terbium (Tb) ) Are preferred.

For example, the surrounding wide gap base material is strontium thiogallate (SrGa ₂ S ₄ ), and phosphor material (SrGa ₂ S ₄ : Ce, in which cerium (Ce) and manganese (Mn) are co-added to this is used. In the case of Mn), red light emission can be obtained from this phosphor material. In this case, when the phosphor material to be embedded is strontium sulfide: cerium (SrS: Ce), red emission of SrGa ₂ S ₄ : Ce, Mn and blue-green emission of strontium sulfide: cerium (SrS: Ce) are added. Colors can be mixed and white light emission can be obtained.

Also, in this embedded structure, there is a ratio in which the common constituent elements (for example, Sr and S) are included in the surrounding wide gap matrix material (for example, SrGa ₂ S ₄ ) and the embedded phosphor matrix material (for example, SrS). If it is high, the defect density at the junction interface of those materials (for example, SrGa ₂ S ₄ and SrS) can be reduced. Such a reduction in the defect density is easier than in the case where the ratio of the common constituent elements is low, so that it is possible to suppress the deactivation (extinction) of electron-hole pairs on the embedded phosphor surface.

  In this embodiment, since the surrounding material has a wider gap than the material to be embedded, the particle size (size) of the embedded material is made ultrafine and made about nanometers (1 to 10 nm), Furthermore, the luminous efficiency can be improved.

  In this case, energy absorbed by the base material (SrS or CaS) of the material to be embedded can be efficiently transferred to the luminescent center ion without being dissipated from the 1 to 10 nm region of the ultrafine particles, so that highly efficient energy transfer Can be used, and a phosphor with high emission efficiency can be manufactured. Another factor for this high efficiency is considered to be that thermal dissociation is less likely to occur because electrons and holes are spatially confined in the region of 1 to 10 nm.

  According to the present embodiment, since it is hygroscopic and chemically unstable, a phosphor material based on strontium sulfide (SrS), calcium sulfide (CaS) or the like that has not been put into practical use in the past is used. A thin-film or powder-like phosphor having high luminous efficiency and excellent durability and reliability can be produced (formed) easily and inexpensively.

  Hereinafter, the thin film phosphors of Examples 1 to 3 (hereinafter referred to as thin film phosphors) will be described.

"Example 1"
In Example 1, a method for producing a thin-film phosphor using strontium sulfide: cerium (SrS: Ce) as a phosphor to be embedded and strontium thiogallate (SrGa ₂ S ₄ ) as a wide gap base material on the embedding side Will be described. Here, a multi-source vapor deposition method using an MBE (Molecular Beam Epitaxy) apparatus is used as a method for manufacturing a thin film phosphor.

  Table 1 is a table showing conditions for producing the thin film phosphor of Example 1.

ＭＢＥ装置のクヌーセンセル（Knudsen Cell，以下、「Ｋセル」と称す）に充填された原料は、それぞれの温度で蒸発し、基板上では、以下の化学反応によりストロンチウムチオガレイト（ＳｒＧａ_２Ｓ_４）母体結晶薄膜が成長する。

The raw material filled in the Knudsen Cell (hereinafter referred to as “K cell”) of the MBE apparatus evaporates at each temperature, and strontium thiogallate (SrGa ₂ S ₄₎ is formed on the substrate by the following chemical reaction. ) A matrix crystal thin film grows.

Sr + 2Ga ₂ S ₃ → SrGa ₂ S ₄ + 2GaS (↑) (1)
In the formula (1), all of gallium sulfide (GaS) is re-evaporated on the substrate, and gallium sulfide (GaS) does not remain in strontium thiogallate (SrGa ₂ S ₄ ).

  In addition to the reaction of the formula (1), the reaction of the following formula (2) also occurs simultaneously.

Sr + Ga ₂ S ₃ → SrS + 2GaS (↑) (2)
In the equation (2), all of gallium sulfide (GaS) is re-evaporated on the substrate, and gallium sulfide (GaS) does not remain in strontium sulfide (SrS).

At this time, by simultaneously heating the K cell of cerium trichloride (CeCl ₃ ), cerium (Ce) is taken into the strontium sulfide (SrS) crystal and strontium sulfide: cerium (SrS: Ce) is strontium thiogallate. It precipitates in a form embedded in (SrGa ₂ S ₄ ).

  FIG. 1 is a diagram showing an emission spectrum when the thin film phosphor obtained in Example 1 is irradiated with an electron beam.

Peak of luminescence band of cerium ion (Ce ³⁺ ) when strontium thiogallate (SrGa ₂ S ₄ ) base material is mixed with a strontium sulfide: cerium (SrS: Ce) phase and a phosphor is irradiated with an electron beam The wavelength is blue-green light emission in the vicinity of 498 nm.

As described above, according to Example 1, strontium sulfide: cerium (SrS: Ce) is used as the phosphor to be embedded, and strontium thiogallate (SrGa ₂ S ₄ ) is used as the wide gap base material on the surrounding material side, and strontium is used. By mixing the strontium sulfide: cerium (SrS: Ce) phase into the thiogallate (SrGa ₂ S ₄ ) base material, it has high luminous efficiency, excellent durability and reliability, and can obtain blue-green light emission. A thin-film phosphor that can be produced can be produced easily and inexpensively.

"Example 2"
In Example 2, the particle size of the phosphor to be embedded is controlled to about nanometers (1 to 10 nm). Here, strontium sulfide: cerium (SrS: Ce) is used as the phosphor material to be embedded, and strontium thiogallate (SrGa ₂ S ₄ ) is used as the wide gap base material on the surrounding material side.

  FIG. 2 is a diagram schematically showing a cross-sectional structure of the thin film phosphor of the second embodiment. This figure schematically shows a cross-sectional structure. In the actual thin-film phosphor structure, the periodic interval of the particulate phosphor embedded in an extremely small area of nanometers and irregularities at the interface are generated, but this is not shown in the schematic diagram for convenience of explanation.

In Example 2, a multi-source vapor deposition method using an MBE apparatus is used as a method for producing a thin film phosphor. Table 2 shows the production conditions for each material of strontium thiogallate (SrGa ₂ S ₄ ), and Table 3 shows the production conditions for each material of strontium sulfide: cerium (SrS: Ce).

The raw material filled in the K cell of the MBE apparatus is evaporated at each evaporation temperature, and strontium thiogallate (SrGa ₂ S ₄ ) and strontium sulfide: cerium (SrS: Ce) (however, SrGa ₂ as a different phase). containing S ₄₎ are grown, respectively. By sequentially opening and closing the shutters of the K cells of the MBE apparatus during this growth, as shown in FIG. 2, strontium sulfide: cerium (cerium) is formed inside the thin film 1 made of strontium thiogallate (SrGa ₂ S ₄ ). It is possible to grow a thin-film phosphor having a cross-sectional structure in which the ultrafine particle phosphor 2 composed of SrS: Ce is embedded.

表２及び表３において、特に同一の基板温度とＫセル温度を使用していることが実施例２の特徴であり、Ｋセルのシャッターを開閉するだけで図２の構造を有する薄膜を容易に作製することが可能となる。

In Table 2 and Table 3, the same substrate temperature and K cell temperature are used in particular, which is a feature of the second embodiment. The thin film having the structure of FIG. 2 can be easily formed by simply opening and closing the shutter of the K cell. It can be produced.

Moreover, the vapor deposition raw material (ZnS) shown in Table 2 functions as a supply source of sulfur (S) necessary for the production of strontium thiogallate (SrGa ₂ S ₄ ), and has a temperature of 400 ° C. or higher including the substrate temperature shown in Table 2. With respect to temperature, the Zn component completely re-evaporates on the substrate and does not remain in the grown thin film.

  In this case, since the layer thickness of strontium sulfide: cerium (SrS: Ce) is as thin as 2 nm, it is formed in an island shape (dot shape) and is equivalent to an ultrafine particle having a particle size of 2 nm. Is formed.

Further, when the layer thickness of strontium thiogallate (SrGa ₂ S ₄ ) becomes, for example, 5 nm or more, the unevenness at the interface decreases, and strontium sulfide: cerium (SrS: Ce) and strontium thiogallate (SrGa ₂ S). ₄ ), even in such a case, the strontium sulfide: cerium (SrS: Ce) layer is not a strontium sulfide: cerium (SrS: Ce) single phase but a strontium thiogallate as a different phase. Since it is a layer containing a (SrGa ₂ S ₄ ) phase, SrS: Ce fine particles can be easily embedded in strontium thiogallate (SrGa ₂ S ₄ ).

As described above, according to Example 2, here, strontium sulfide: cerium (SrS: Ce) is used as the phosphor material to be embedded, and strontium thiogallate (SrGa ₂ S ₄ ) is used as the embedded wide gap base material. By controlling the particle size of the embedded phosphor to about nanometers (1 to 10 nm), a thin-film phosphor that has high luminous efficiency, excellent durability and reliability, and can obtain blue-green light emission is simple and simple. It can be manufactured at low cost.

"Example 3"
In Example 3, white light emission can be obtained by using strontium sulfide: cerium (SrS: Ce) as the phosphor to be embedded, and red emission of SrGa ₂ S ₄ : Ce, Mn as the embedded wide gap material. A method for producing a thin film phosphor that can be produced will be described.

In Example 3, the K cell was filled with strontium (Sr), digallium trisulfide (Ga ₂ S ₃ ), manganese (Mn), and cerium trichloride (CeCl ₃ ). Heat and feed onto substrate.

In Example 3, in addition to the preparation conditions of Example 1, by simultaneously heating a K cell of manganese (Mn) and cerium trichloride (CeCl ₃ ), strontium thiogallate (SrGa ₂ S ₄ ) Manganese (Mn) and cerium (Ce) are taken in to grow a SrGa ₂ S ₄ : Mn, Ce crystal thin film.

At this time, strontium sulfide: cerium (SrS: Ce) is deposited in a form embedded in the SrGa ₂ S ₄ : Mn, Ce thin film. Each condition of the temperature of the K cell, the substrate temperature, and the deposition rate is as shown in Table 4 below.

図３は、実施例３の薄膜状蛍光体に電子線を照射した際の発光スペクトルを示す図である。

FIG. 3 is a diagram showing an emission spectrum when the thin-film phosphor of Example 3 is irradiated with an electron beam.

  FIG. 4 is a graph showing the change characteristics of the chromaticity coordinates of the thin film phosphor of the third embodiment.

In the SrGa ₂ S ₄ : Ce, Mn phosphor material in which manganese (Mn) and cerium (Ce) are incorporated into the strontium thiogallate (SrGa ₂ S ₄ ) base material, strontium sulfide: cerium (SrS: Ce) is present. The peak wavelength of the emission band of cerium ion (Ce ³⁺ ) when the phosphor deposited in an embedded form is irradiated with an electron beam is blue-green light emission around 498 nm. Further, the peak wavelength of the red emission band due to manganese (Mn) is in the vicinity of 694 nm.

As described above, strontium sulfide: cerium (SrS: SrS) is incorporated into the SrGa ₂ S ₄ : Ce, Mn phosphor material in which manganese (Mn) and cerium (Ce) are incorporated into the strontium thiogallate (SrGa ₂ S ₄ ) base material. In the thin film phosphor in which the Ce) phase is embedded, when the doping concentration of cerium (Ce) and manganese (Mn) is changed, the chromaticity coordinates of the emission color of the thin film phosphor along the solid line portion of FIG. Can be changed. Therefore, it is possible to obtain paper white light with good color purity of x = 0.30 and y = 0.38.

  In addition to Example 3, zinc sulfide (ZnS) is co-evaporated as in Example 2, and the particle size of the embedded strontium sulfide: cerium (SrS: Ce) phosphor is reduced to nanometers by shutter control. It is also possible to control to the extent (1 to 10 nm).

  In the above-described embodiment, the multi-source vapor deposition method using the MBE apparatus has been described as a thin film phosphor production method. However, other thin film production methods, for example, electron beam vapor deposition are specifically described. It is also possible to use a method, a sputtering method, a CVD method, an ion plating method, or the like.

  As described above, the thin film phosphor has been described as an example. However, it is also possible to produce a powder phosphor having the same embedded structure by using a normal sintering method.

"Application to display devices"
FIG. 5 is a diagram showing an FED element having a structure in which a thin film phosphor and an electron source are opposed to each other, and FIG. 6 is a diagram showing a thin film EL element using the thin film phosphor as a light emitting layer.

  As shown in FIG. 5, the FED element has a transparent conductive thin film 4 and a thin-film phosphor 5 made of ITO (Indium Tin Oxide) or the like laminated on one surface 3A of a glass substrate 3. The electron emission source 6 is disposed opposite to the electron emission source 6. Although not shown in FIG. 5, the space between the glass substrate 3 and the electron emission source 6 is sealed by a sealing body and kept in a vacuum. The thin film phosphor 5 is irradiated with electrons emitted from the electron emission source 6 to obtain light emission.

  Further, as shown in FIG. 6, the thin film EL element is formed by laminating a transparent conductive thin film 8 made of ITO or the like, a first insulating layer 10a, and a thin film phosphor 9 on a glass substrate 7. The back electrode 11 is disposed via the second insulating layer 10b that covers the phosphor 9. When a voltage is applied between the conductive thin film 8 and the back electrode 11, light emission from the thin film phosphor 9 is obtained. FIG. 5 shows the structure of an FED panel, and FIG. 6 shows the structure of an element corresponding to one pixel of a thin film EL display. By arranging these structures (matrixing) using a known technique, a planar type is shown. It can be a display (panel).

  In Example 1 and Example 2, a method for producing a thin film phosphor capable of obtaining blue-green light emission was described, and in Example 3, a method for producing a white thin film phosphor was described. These thin-film phosphors are thin-film phosphors 5 of FED elements as shown in FIG. 5, thin-film phosphors 9 of thin-film EL elements as shown in FIG. 6, or thin-film phosphors of FEL (not shown). It can be used for a phosphor. Moreover, it becomes possible to produce a white LED (not shown) by exciting these thin-film phosphors with a near-ultraviolet or blue LED.

  The phosphor of the exemplary embodiment of the present invention has been described above, but the present invention is not limited to the specifically disclosed embodiment, and does not depart from the scope of the claims. Various modifications and changes are possible.

It is a figure which shows the emission spectrum at the time of irradiating an electron beam to the fluorescent thin film obtained in Example 1. FIG. It is a figure which shows typically the cross-section of the thin film fluorescent substance of Example 2. FIG. It is a figure which shows the emission spectrum at the time of irradiating an electron beam to the thin film fluorescent substance of Example 3. It is a figure which shows the change characteristic of the chromaticity coordinate of the thin film fluorescent substance of Example 3. FIG. It is a figure which shows the FED element which has a structure where the thin film fluorescent substance and the electron source were made to oppose. It is a figure which shows the thin film EL element which uses a thin film phosphor as a light emitting layer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Thin film 2 Ultrafine particle fluorescent substance 3, 7 Glass substrate 4, 8 Conductive thin film 5, 9 Thin film fluorescent substance 6 Electron emission source 10a 1st insulating layer 10b 2nd insulating layer 11 Back electrode

Claims (3)

A first phosphor material comprising a chemically unstable first host material;
Covering the periphery of the first phosphor material, it has a second phosphor material comprising a chemically stable second base material having a band gap larger than the first base material,
The phosphor in which the first phosphor material is SrS: Ce and the second phosphor material is SrGa ₂ S ₄ or SrGa ₂ S ₄ : Ce, Mn . The phosphor according to claim 1, wherein the first phosphor material has an ultrafine particle size of 1 to 10 nm. A display panel using a phosphor according to claim 1 or 2.

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