JP5192732B2 - Semiconductor device and IC label, IC tag, and IC card including the semiconductor device - Google Patents

Semiconductor device and IC label, IC tag, and IC card including the semiconductor device Download PDF

Info

Publication number
JP5192732B2
JP5192732B2 JP2007138891A JP2007138891A JP5192732B2 JP 5192732 B2 JP5192732 B2 JP 5192732B2 JP 2007138891 A JP2007138891 A JP 2007138891A JP 2007138891 A JP2007138891 A JP 2007138891A JP 5192732 B2 JP5192732 B2 JP 5192732B2
Authority
JP
Japan
Prior art keywords
circuit
battery
signal
film
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007138891A
Other languages
Japanese (ja)
Other versions
JP2008009972A (en
JP2008009972A5 (en
Inventor
潤 小山
Original Assignee
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006152831 priority Critical
Priority to JP2006152831 priority
Application filed by 株式会社半導体エネルギー研究所 filed Critical 株式会社半導体エネルギー研究所
Priority to JP2007138891A priority patent/JP5192732B2/en
Publication of JP2008009972A publication Critical patent/JP2008009972A/en
Publication of JP2008009972A5 publication Critical patent/JP2008009972A5/ja
Application granted granted Critical
Publication of JP5192732B2 publication Critical patent/JP5192732B2/en
Application status is Expired - Fee Related legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Description

The present invention relates to a semiconductor device. In particular, the present invention relates to a semiconductor device that transmits and receives data and receives power via radio waves. Further, the present invention relates to a communication system using a semiconductor device via radio waves, an antenna and a reader / writer for transmitting / receiving data to / from the semiconductor device, and an antenna and a charger for supplying power to the semiconductor device.

Note that a semiconductor device in this specification refers to all devices that can function by utilizing semiconductor characteristics.

In recent years, individual identification technology using wireless communication such as electromagnetic fields or radio waves has attracted attention. In particular, as a semiconductor device that communicates data by wireless communication, an individual identification technique using an RFID (Radio Frequency Identification) tag has attracted attention. An RFID tag (hereinafter simply referred to as RFID) is also called an IC (Integrated Circuit) tag, an IC chip, an RF tag, a wireless tag, or an electronic tag. Individual identification technology using RFID has begun to be used for production and management of individual objects, and is expected to be applied to personal authentication.

RFID is an active type (active type) RFID capable of transmitting radio waves or electromagnetic waves containing RFID information and external radio waves depending on whether the power supply is built in or externally supplied with power. Alternatively, it can be divided into two types: passive type (passive type) RFID driven using electromagnetic wave (carrier wave) power (see Patent Document 1 for the active type and Patent Document 2 for the passive type). . Among these, the active type RFID has a built-in power source for driving the RFID, and includes a battery as a power source. In the passive type, an external radio wave or electromagnetic wave (carrier wave) is used as a power source for driving the RFID, and a configuration without a battery is realized.

FIG. 31 is a block diagram showing a specific configuration of an active type RFID. In the active type RFID 3100 in FIG. 31, a communication signal received by the antenna circuit 3101 is input to the demodulation circuit 3105 and the amplification circuit 3106 in the signal control circuit 3102. Usually, a carrier of 13.56 MHz, 915 MHz or the like is sent after being subjected to processing such as ASK modulation and PSK modulation. Here, FIG. 31 shows a 13.56 MHz communication signal as an example. In FIG. 31, a reference clock signal is required to process a signal, and here, a 13.56 MHz carrier is used as a clock. The amplifier circuit 3106 amplifies the 13.56 MHz carrier and supplies it to the logic circuit 3107 as a clock. A communication signal subjected to ASK modulation or PSK modulation is demodulated by a demodulation circuit 3105. The demodulated signal is also sent to the logic circuit 3107 and analyzed. The signal analyzed by the logic circuit 3107 is sent to the memory control circuit 3108. Based on the signal, the memory control circuit 3108 controls the memory circuit 3109, takes out the data stored in the memory circuit 3109, and sends it to the logic circuit 3110. The data is encoded by the logic circuit 3110 and then amplified by the amplifier circuit 3111. The modulation circuit 3112 modulates the carrier by the signal. Here, the power in FIG. 31 is supplied via a power supply circuit 3104 by a battery 3103 provided outside the signal control circuit. The power supply circuit 3104 supplies power to the amplifier circuit 3106, the demodulator circuit 3105, the logic circuit 3107, the memory control circuit 3108, the memory circuit 3109, the logic circuit 3110, the amplifier circuit 3111, the modulation circuit 3112, and the like. In this way, the active type RFID operates.

FIG. 32 is a block diagram showing a specific configuration of a passive type RFID. In the passive type RFID 3200 in FIG. 32, a communication signal received by the antenna circuit 3201 is input to the demodulation circuit 3205 and the amplification circuit 3206 in the signal control circuit 3202. Usually, a communication signal is sent after a carrier such as 13.56 MHz or 915 MHz is subjected to processing such as ASK modulation or PSK modulation. FIG. 32 shows an example of 13.56 MHz as a communication signal. In FIG. 32, in order to process a signal, a reference clock signal is required, and here, a 13.56 MHz carrier is used as a clock. The amplifier circuit 3206 amplifies the 13.56 MHz carrier and supplies it to the logic circuit 3207 as a clock. A communication signal subjected to ASK modulation or PSK modulation is demodulated by a demodulation circuit 3205. The demodulated signal is also sent to the logic circuit 3207 and analyzed. The signal analyzed by the logic circuit 3207 is sent to the memory control circuit 3208. Based on the signal, the memory control circuit 3208 controls the memory circuit 3209, takes out the data stored in the memory circuit 3209, and sends it to the logic circuit 3210. After being encoded by the logic circuit 3210 and amplified by the amplifier circuit 3211, the modulation circuit 3212 modulates the carrier by the signal. On the other hand, the communication signal input to the rectifier circuit 3203 is rectified and input to the power supply circuit 3204. The power supply circuit 3204 supplies power to the amplifier circuit 3206, the demodulator circuit 3205, the logic circuit 3207, the memory control circuit 3208, the memory circuit 3209, the logic circuit 3210, the amplifier circuit 3211, the modulation circuit 3212, and the like. In this way, the passive type RFID operates.
JP 2005-316724 A JP-T-2006-503376

However, as shown in FIG. 31, in the case of a semiconductor device having an active type RFID equipped with a battery for driving, the battery is used over time according to the intensity setting of radio waves necessary for transmission / reception of individual information and transmission / reception of signals. However, there is a problem that power necessary for transmitting / receiving individual information cannot be generated. For this reason, in order to continue to use a semiconductor device having an active type RFID equipped with a driving battery, there is a problem in that it is necessary to check the remaining capacity of the battery and replace the battery.

Further, as shown in FIG. 32, in the case of a semiconductor device having a passive type RFID that uses electric power of an external radio wave or electromagnetic wave (carrier wave) as a power source for driving, transmission / reception of a long distance signal, There is a problem that it is difficult to secure power necessary for transmission and reception, and it is difficult to realize a good transmission and reception state. For this reason, use of a semiconductor device having a passive type RFID that uses electric power of an external radio wave or electromagnetic wave (carrier wave) as a power source is a short distance from an antenna of a reader / writer that is a means for supplying the radio wave or electromagnetic wave (carrier wave). There was a problem that it was limited to.

Therefore, the present invention can transmit and receive individual information in a semiconductor device having an RFID without performing confirmation of the remaining capacity of the battery or replacement of the battery due to deterioration of the battery as a driving power source, and driving. It is an object of the present invention to provide a semiconductor device that maintains a good state of regular transmission / reception of individual information even when the power of an external radio wave or electromagnetic wave (carrier wave) is not sufficient as a power source for the purpose. In addition, another object is to provide a semiconductor device that can be driven with low power consumption by reducing power consumption in a signal control circuit to which power is supplied from a drive power supply.

In order to solve the above problems, the present invention is characterized in that a power supply circuit including a battery (here, a secondary battery) is provided as a power supply for supplying power in the RFID. The present invention is characterized in that the battery of the power supply circuit is charged with a radio signal. Further, a switch circuit is provided in a power supply circuit that supplies power to a signal control circuit that transmits and receives individual information to and from the outside, and the supply of power to the signal control circuit is periodically controlled. Hereinafter, a specific configuration of the present invention will be described.

One of the semiconductor devices of the present invention includes an antenna circuit, a power supply circuit, and a signal control circuit. The power supply circuit includes a rectifier circuit that rectifies a signal from the antenna circuit, and a rectified signal. It has a battery to be charged, a switch circuit, a low frequency signal generation circuit, and a power supply circuit, and the switch circuit controls power supplied from the battery to the power supply circuit by a signal from the low frequency signal generation circuit. Thus, the power supply to the signal control circuit is controlled.

Another semiconductor device of the present invention includes an antenna circuit, a power supply circuit, and a signal control circuit. The power supply circuit rectifies a signal from the antenna circuit, and a control circuit. And a battery charged by the rectified signal, a switch circuit, a low frequency signal generation circuit, and a power supply circuit, and the signal control circuit compares the power from the rectification circuit with the power from the battery. The switch circuit selects the power to be supplied to the switch circuit. The switch circuit controls the power supplied to the power supply circuit via the control circuit according to the signal from the low frequency signal generation circuit, thereby controlling the signal. The power supply to the circuit is controlled.

In the present invention, the battery may be a lithium battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, or a capacitor.

In the present invention, the battery includes a negative electrode active material layer, a solid electrolyte layer on the negative electrode active material layer, a positive electrode active material layer on the solid electrolyte layer, and a current collector thin film on the positive electrode active material layer. It may be.

In the present invention, the control circuit connects the battery and the switch circuit when the power from the rectifier circuit is smaller than the power from the battery, and when the power from the battery is smaller than the power from the rectifier circuit, A circuit that is not connected to the switch circuit may be used.

In the present invention, the semiconductor device may include a booster antenna, and the antenna circuit may receive an external signal via the booster antenna.

In the present invention, the antenna circuit may include a first antenna circuit for receiving power for charging the battery and a second antenna circuit for transmitting and receiving signals from the signal control circuit. Good.

In the present invention, the first antenna circuit may be composed of a plurality of antenna circuits.

In the present invention, any one of the first antenna circuit and the second antenna circuit may be configured to receive a signal by an electromagnetic induction method.

In the present invention, the low frequency signal generating circuit may be configured to generate a signal to be output to the switch circuit by dividing the generated clock signal.

In the present invention, the signal control circuit may include an amplifier circuit, a modulation circuit, a demodulation circuit, a logic circuit, and a memory control circuit.

  Note that in the present invention, the term “connected” includes the case of being electrically connected and the case of being directly connected. Therefore, in the configuration disclosed by the present invention, in addition to a predetermined connection relationship, other elements (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, etc.) that can be electrically connected are arranged. May be. Alternatively, they may be arranged directly connected without interposing another element therebetween. In addition, it is a case where it is connected without interposing other elements that enable electrical connection, and includes only the case where it is directly connected, and does not include the case where it is electrically connected Shall be described as being directly connected. Note that the description of being electrically connected includes the case of being electrically connected and the case of being directly connected.

  Note that various types of transistors can be applied to the present invention. Thus, there is no limitation on the type of applicable transistor. Therefore, a thin film transistor (TFT) using a non-single-crystal semiconductor film typified by amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, a MOS transistor, a junction transistor, or a bipolar transistor Alternatively, a transistor using a compound semiconductor such as ZnO or a-InGaZnO, a transistor using an organic semiconductor or a carbon nanotube, or another transistor can be used. Note that the non-single-crystal semiconductor film may contain hydrogen or halogen. In addition, various types of substrates on which the transistor is arranged can be used, and the substrate is not limited to a specific type. Therefore, for example, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, or the like can be used. Alternatively, a transistor may be formed using a certain substrate, and then the transistor may be moved to another substrate and placed on another substrate.

  Further, as a transistor structure applied to the semiconductor device of the present invention, for example, a multi-gate structure in which the number of gates is two or more may be used. The multi-gate structure reduces off-current, improves the breakdown voltage of the transistor to improve reliability, and even when the drain-source voltage changes when operating in the saturation region. The current does not change so much, and a flat characteristic can be obtained. Alternatively, a structure in which gate electrodes are arranged above and below the channel may be employed. By adopting a structure in which gate electrodes are arranged above and below the channel, the current value can be increased, a depletion layer can be easily formed, and the S value can be decreased. Further, a structure in which a gate electrode is disposed above a channel, a structure in which a gate electrode is disposed below a channel, a normal staggered structure, or an inverted staggered structure may be employed. The channel region may be divided into a plurality of regions, may be connected in parallel, or may be connected in series. In addition, a source electrode or a drain electrode may overlap with the channel (or a part thereof). By using a structure in which a source electrode or a drain electrode overlaps with a channel (or part of it), it is possible to prevent electric charges from being accumulated in part of the channel and unstable operation. There may also be an LDD region. By providing the LDD region, the off-current can be reduced, the breakdown voltage of the transistor can be improved to improve reliability, and the drain-source current can be changed even when the drain-source voltage changes when operating in the saturation region. Does not change so much, and a flat characteristic can be obtained.

Note that as described above, various types of transistors can be used for the semiconductor device of the present invention, and the transistor can be formed using various substrates. Therefore, the entire circuit may be formed using a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate. It may be formed using any substrate, and may be formed using any substrate. Since all the circuits are formed using one substrate, the number of parts can be reduced to reduce the cost, and the number of connection points with circuit parts can be reduced to improve the reliability. Alternatively, a part of the circuit may be formed using a certain substrate, and another part of the circuit may be formed using another substrate. That is, all of the circuits may not be formed on the same substrate. For example, a part of a circuit is formed using a transistor over a glass substrate, an IC chip is formed using a single crystal substrate as another part of the circuit, and the IC chip is formed by COG (Chip On Glass). It may be arranged on a glass substrate and connected to the other part of the circuit. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed wiring board. As described above, since a part of the circuit is formed on the same substrate, the number of parts can be reduced to reduce the cost, and the number of connection points with the circuit parts can be reduced to improve the reliability. In addition, since the power consumption is high in a portion where the drive voltage is high or a portion where the drive frequency is high, an increase in power consumption can be prevented if such a portion is not formed on the same substrate.

Note that a semiconductor device in this specification refers to all devices that can function by utilizing semiconductor characteristics.

A semiconductor device of the present invention includes a power supply circuit including a battery. For this reason, the battery can be charged periodically, and it is possible to prevent a shortage of electric power used for transmission / reception of individual information due to deterioration of the battery over time. The semiconductor device of the present invention is characterized in that when charging a battery, the antenna circuit provided in the RFID receives power and charges the battery. Therefore, it is possible to charge the battery by using electric power from an external radio wave or electromagnetic wave as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without checking the remaining capacity of the battery or replacing the battery as in the case of the active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

In addition to the advantages provided by the battery, the semiconductor device of the present invention is provided with a switch circuit in a power supply circuit that supplies power to a signal control circuit that transmits / receives individual information to / from the outside. The power supply to the control circuit is controlled. By controlling the power supply to the signal control circuit in the switch circuit provided in the power supply circuit, the RFID operation can be performed intermittently. Therefore, it is possible to reduce power consumption in the battery and to operate for a long time without supplying power by a wireless signal.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in the structures of the present invention described below, the same reference numeral is used in different drawings.
(Embodiment 1)

  One structural example of the semiconductor device of the present invention will be described with reference to block diagrams shown in FIGS. Note that in this embodiment, the case where a semiconductor device is used as an RFID tag (hereinafter also simply referred to as “RFID”) will be described.

The semiconductor device in FIG. 1 (hereinafter referred to as “RFID 101”) includes an antenna circuit 102, a power supply circuit 103, and a signal control circuit 104. The signal control circuit 104 includes an amplification circuit 105, a demodulation circuit 106, a logic circuit 107, a memory control circuit 108, a memory circuit 109, a logic circuit 110, an amplification circuit 111, and a modulation circuit 112. The power supply circuit 103 includes a rectifier circuit 113, a battery 114, a low frequency signal generation circuit 115, a switch circuit 116, and a power supply circuit 117.

FIG. 2 is a block diagram in which the antenna circuit 102 transmits and receives a signal from the reader / writer 201 and performs charging based on the signal from the reader / writer 201. In FIG. 2, a signal received by the antenna circuit 102 is input to the power supply circuit 103 and the signal control circuit 104.

In FIG. 2, a signal input from the antenna circuit 102 to the power supply circuit 103 is input to the power supply circuit 117 via the rectifier circuit 113 and the switch circuit 116. In FIG. 2, a signal received by the antenna circuit 102 is input to the battery 114 through the rectifier circuit 113, and the battery 114 is charged. In FIG. 2, the signal received by the antenna circuit 102 is input to the low frequency signal generation circuit 115 via the rectification circuit 113. Further, the low frequency signal generation circuit 115 outputs a signal for controlling on and off of the switch circuit 116.

In FIG. 2, a signal input from the antenna circuit 102 to the signal control circuit 104 is input to the demodulation circuit 106 via the amplifier circuit 105 and demodulated by the demodulation circuit 106. After that, the signal is input to the modulation circuit 112 through the logic circuit 107, the memory control circuit 108, the memory circuit 109, the logic circuit 110, and the amplification circuit 111, and is then modulated by the modulation circuit 112, and is read from the antenna circuit 102 by the reader / writer. 201 is transmitted.

  Note that the antenna circuit 102 is described as including an antenna 401 and a resonant capacitor 402 as illustrated in FIG. 4A, and the antenna 401 and the resonant capacitor 402 are collectively referred to as the antenna circuit 102. The rectifier circuit 113 may be a circuit that converts an AC signal induced by electromagnetic waves received by the antenna circuit 102 into a DC signal by rectifying and smoothing the AC signal. For example, as shown in FIG. 4B, a rectifier circuit 407 may be configured by a diode 404, a diode 405, and a smoothing capacitor 406.

  In the power supply circuit 117 in FIGS. 1 and 2, a carrier wave signal can be rectified by the rectifier circuit 113 and supplied to the power supply circuit 117 through the switch circuit 116. The power supplied from the battery 114 is supplied to the power supply circuit 117 via the switch circuit 116 by the power supplied from the battery 114 when sufficient power is not obtained from the antenna circuit 102 of the RFID 101 when the communication distance is extended. Electric power can be supplied.

  The shape of the antenna provided in the antenna circuit 102 in FIGS. 1 and 2 is not particularly limited. That is, as a signal transmission method applied to the antenna circuit 102 in the RFID 101, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be selected by the practitioner in consideration of the intended use, and an antenna having an optimal length and shape may be provided in accordance with the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a transmission method, a conductive film functioning as an antenna is formed in a ring shape (for example, an electromagnetic induction due to a change in electric field density). , Loop antenna), and spiral (for example, spiral antenna).

  In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a transmission method, a conductive function that functions as an antenna in consideration of the wavelength of a radio wave used for signal transmission. The length and shape of the film may be set as appropriate, and the conductive film functioning as an antenna can be formed, for example, in a linear shape (for example, a dipole antenna) or a flat shape (for example, a patch antenna). Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  The frequencies of signals transmitted and received between the antenna circuit 102 and the reader / writer 201 include 125 kHz, 13.56 MHz, 915 MHz, 2.45 GHz, and the like, and ISO standards are set for each. Of course, the frequency of the signal transmitted and received between the antenna circuit 102 and the reader / writer 201 is not limited to this. For example, the submillimeter wave is 300 GHz to less than 3 THz, the millimeter wave is 30 GHz to less than 300 GHz, and the microwave is 3 GHz or more. Less than 30 GHz, 300 MHz to less than 3 GHz, which is an ultra-high frequency, 30 MHz to less than 300 MHz, which is an ultrashort wave, 3 MHz to less than 30 MHz that is a short wave, 300 kHz to less than 3 MHz that is a medium wave, 30 kHz to less than 300 KHz that is a long wave, and a very long wave Any frequency of 3 KHz or more and less than 30 KHz can be used. A signal transmitted and received between the antenna circuit 102 and the reader / writer 201 is a signal obtained by modulating a carrier wave. The modulation method of the carrier wave may be analog modulation or digital modulation, and may be any of amplitude modulation, phase modulation, frequency modulation, and spread spectrum. Desirably, amplitude modulation or frequency modulation is used.

  Here, an example of the shape of the antenna provided in the antenna circuit 102 is shown in FIG. For example, as shown in FIG. 3A, a structure in which an antenna 333 is arranged around a chip 332 provided with a signal control circuit and a power supply circuit may be employed. Further, as shown in FIG. 3B, a structure in which a thin antenna 333 is provided over a chip 332 provided with a signal control circuit may be employed. Further, as shown in FIG. 3C, the shape of an antenna 333 for receiving high-frequency electromagnetic waves may be used for a chip 332 provided with a signal control circuit. Further, as shown in FIG. 3D, a shape of an antenna 333 that is 180 degrees omnidirectional (same reception is possible from any direction) with respect to the chip 332 provided with the signal control circuit may be employed. Further, as shown in FIG. 3E, an antenna 333 that is elongated in a rod shape with respect to a chip 332 provided with a signal control circuit may be used. The antenna circuit can use antennas of these shapes.

  Further, in FIG. 3, the connection between the chip 332 provided with the signal control circuit and the antenna is not particularly limited. For example, a method may be employed in which the antenna 333 and the chip 332 provided with the signal control circuit are connected using wire bonding connection or bump connection, or a part of the chip is attached to the antenna 333 as an electrode. In this method, the chip 332 can be attached to the antenna 333 by using an ACF (anisotropic conductive film). The length required for the antenna differs depending on the frequency used for reception. For this reason, the length is generally set to 1 / integer of the wavelength. For example, when the frequency is 2.45 GHz, the length may be about 60 mm (1/2 wavelength) and about 30 mm (1/4 wavelength).

FIG. 5 shows a configuration in which the antenna circuit is increased in the RFID in the configuration shown in FIGS. As shown in FIG. 5, the RFID 101 may be provided by dividing the antenna circuit 102 into a first antenna circuit 301 for the signal control circuit 104 and a second antenna circuit 302 for the power supply circuit 103. In this case, it is desirable that the wireless signal for supplying power to the power supply circuit 103 is supplied from the charger 303 separately from the signal transmitted from the reader / writer 201. The radio signal transmitted to the second antenna circuit 302 is desirably a signal having a frequency different from that of the signal transmitted from the reader / writer 201 in order to avoid interference with the signal transmitted / received from the reader / writer 201.

In the configuration illustrated in FIG. 5, the second antenna circuit 302 is not limited to receiving a signal from the charger 303, but may receive other wireless signals in the space and supply signals to the power supply circuit. Good. For example, as a radio signal (radio wave) received by the second antenna circuit 302 for charging the battery 114 of the RFID 101, radio waves (800 to 900 MHz band, 1.5 GHz, 1.9 to 2.1 GHz) of a mobile phone relay station are used. Bands), radio waves oscillated from mobile phones, radio clock radio waves (40 kHz, etc.), household AC power source noise (60 Hz, etc.), other readers / writers (readers / writers that do not communicate directly with RFID 101) It is possible to use radio waves that are generated at random.

  By receiving an external wireless signal and charging the battery wirelessly, a separate charger or the like for charging the battery is not required, so that the RFID can be provided at a lower cost. In addition, the antenna provided in the second antenna circuit 302 is provided with a length and shape that can easily receive these radio signals. In addition, when receiving a plurality of types (a plurality of frequency bands) of radio waves as described above, it is preferable to provide a plurality of antenna circuits including antennas having different lengths and shapes.

In the present invention, the on / off state of the switch circuit 116 is controlled by a signal from the low-frequency signal generation circuit 115 to operate the RFID intermittently to reduce power consumption. In general, an RFID always operates in response to a signal from a reader / writer. However, depending on the contents of data and application, it may not always be necessary to respond constantly. According to the present invention, in such a case, the consumption of electric power stored in the battery can be reduced by stopping the operation of the RFID. In the semiconductor device of the present invention, only the low frequency signal generation circuit 115 in FIGS. 1 and 2 is always operating. The low frequency signal generation circuit 115 operates based on the electric power stored in the battery 114.

  In the present invention, the battery refers to a battery that can recover the continuous use time by charging. As the battery, it is preferable to use a battery formed in a sheet shape having a thickness of 1 μm to several μm. For example, by using a lithium battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery, or the like, Miniaturization is possible. Needless to say, any rechargeable battery may be used, such as a nickel hydride battery or a nickel-cadmium rechargeable battery, or a large-capacity capacitor.

  Next, an example of the power supply circuit 117 in FIGS. 1 and 2 will be described with reference to FIG.

The power supply circuit 117 includes a reference voltage circuit and a buffer amplifier circuit. The reference voltage circuit includes a resistor 1000 and diode-connected transistors 1002 and 1003, and generates a reference voltage corresponding to twice the VGS of the transistor. The buffer amplifier circuit includes a differential circuit including transistors 1005 and 1006, a current mirror circuit including transistors 1007 and 1008, a current supply resistor 1004, a transistor 1009, and a source ground amplifier circuit including a resistor 1010. The

  In the power supply circuit shown in FIG. 6, when the current flowing from the output terminal is large, the current flowing through the transistor 1009 decreases, and when the current flowing from the output terminal is small, the current flowing through the transistor 1009 increases and flows through the resistor 1010. The current operates so as to be almost constant. Further, the potential of the output terminal is almost the same value as that of the reference voltage circuit. Although a power supply circuit having a reference voltage circuit and a buffer amplifier circuit is shown here, the power supply circuit used in the present invention is not limited to FIG. 6 and may be another type of circuit.

  Next, an operation when data is written from the reader / writer 201 to the signal control circuit 104 of the RFID 101 illustrated in FIGS. 1 and 2 will be described below. A signal received by the antenna circuit 102 is input to the logic circuit 107 through the amplifier circuit 105 as a clock signal. Further, the signal input from the antenna circuit 102 is demodulated by the demodulation circuit 106 and input to the logic circuit 107 as data.

  In the logic circuit 107, the input data is decoded. Since the reader / writer 201 encodes the data with a deformed mirror code, NRZ-L code or the like and transmits the data, the logic circuit 107 decodes the data. The decoded data is sent to the memory control circuit 108, and the data is written into the memory circuit 109 accordingly. The memory circuit 109 needs to be a nonvolatile memory circuit that can be retained even when the power is turned off, and a mask ROM or the like is used.

  When the reader / writer 201 reads data stored in the memory circuit 109 in the signal control circuit 104 of the RFID 101 shown in FIGS. 1 and 2, the following operation is performed. The AC signal received by the antenna circuit 102 is input to the logic circuit 107 through the amplifier circuit 105, and a logic operation is performed. Then, using the signal from the logic circuit 107, the memory control circuit 108 is controlled to read out data stored in the memory circuit 109. Next, the data called from the memory circuit 109 is processed by the logic circuit 110, amplified by the amplifier circuit 111, and then the modulation circuit 112 is operated. Data is processed in accordance with a method defined in standards such as ISO 14443, ISO 15693, and ISO 18000, but other standards may be used as long as consistency with a reader / writer is ensured.

  When the modulation circuit 112 operates, the impedance of the antenna circuit 102 changes. As a result, the signal of the reader / writer 201 reflected by the antenna circuit 102 changes. By reading this change, the reader / writer can know the data stored in the memory circuit 109 of the RFID 101. Such a modulation method is called a load modulation method.

  Note that various types of transistors can be used as the transistor provided in the signal control circuit 104. Thus, there is no limitation on the type of applicable transistor. Therefore, a thin film transistor (TFT) using a non-single-crystal semiconductor film typified by amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, a MOS transistor, a junction transistor, or a bipolar transistor Alternatively, a transistor using a compound semiconductor such as ZnO or a-InGaZnO, a transistor using an organic semiconductor or a carbon nanotube, or another transistor can be used. Note that the non-single-crystal semiconductor film may contain hydrogen or halogen. Various types of substrates on which the signal control circuit 104 is formed can be used, and are not limited to specific ones. Therefore, for example, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, or the like can be used. Alternatively, the signal control circuit 104 may be formed on a certain substrate, and then the signal control circuit 104 may be moved to another substrate and disposed on another substrate.

  Next, an operation when the RFID 101 shown in FIGS. 1 and 2 is charged with power from an external wireless signal will be described below. The external radio signal received by the antenna circuit 102 is half-wave rectified and smoothed by the rectifier circuit 113. The power output from the rectifier circuit 113 is supplied to the power supply circuit 117 via the switch circuit 116, and surplus power is stored in the battery 114.

Further, as described above, in the present invention, power consumption is reduced by intermittently operating the RFID. In general, an RFID always operates in response to a signal from a reader / writer. However, depending on the contents of data and application, it may not always be necessary to respond constantly. In such a case, the consumption of electric power stored in the battery can be reduced by stopping the operation of the RFID. In the present invention, only the low-frequency signal generation circuit 115 in FIGS. 1 and 2 is always operating. The low frequency signal generation circuit 115 operates based on the electric power stored in the battery 114. The output waveform of the low frequency signal generation circuit will be described with reference to FIG.

FIG. 7 shows a waveform of a signal output from the low frequency signal generation circuit to the switch circuit. In the example of FIG. 7, the power consumption can be reduced to about 1 / (n + 1) by setting the duty ratio of the output waveform to 1: n (n is an integer). Based on this signal, the switch circuit 116 is driven. The switch circuit 116 connects the battery 114 and the power supply circuit 117 only during a period when the output signal is high, and thereby operates the RFID only during that period.

FIG. 8 illustrates a specific configuration example of the low-frequency signal generation circuit in FIGS. 8 includes a ring oscillator 820, a frequency dividing circuit 821, an AND circuit 822, and inverters 823 and 824. The oscillation signal of the ring oscillator 820 is frequency-divided by the frequency dividing circuit 821, and the output is input to the AND circuit 822. The AND circuit 822 generates a low duty ratio signal. Further, the output of the AND circuit 822 is input to the switch circuit 116 including the transmission gate 825 via the inverter 823 and the inverter 824. The ring oscillator 820 is a ring oscillator that oscillates at a low frequency, and oscillates at 1 kHz, for example.

FIG. 9 is a timing chart of signals output from the components of the low-frequency signal generation circuit 115 shown in FIG. FIG. 9 shows the output waveform of the ring oscillator 820, the output waveform of the frequency dividing circuit 821, and the output waveform of the AND circuit 822. If the frequency dividing circuit 821 is a frequency dividing circuit having a frequency of 1024, the output signal of the frequency dividing circuit includes a frequency dividing circuit output waveform 1 which is a sequentially frequency-divided signal as shown in FIG. Waveform 2 and frequency divider circuit output waveform 3 are sequentially output. In this embodiment, as an example, when the frequency divider 821 is a frequency divider of 1024, the duty of a signal output from the AND circuit 822 to which a plurality of signals output from the frequency divider 821 are input. The ratio can be formed as a 1: 1024 signal. At this time, if the oscillation frequency of the ring oscillator 820 is 1 KHz, the operation period is 0.5 us and the non-operation period is 512 us in one cycle. The oscillation frequency of the ring oscillator is not limited to 1 KHz and may be other frequencies. Further, the number of frequency divisions in the frequency divider circuit is not limited to 1024, and may be other values.

The signal output from the low frequency signal generation circuit according to the present invention can periodically control on / off of the transmission gate of the switch circuit 116 and control the supply of power from the battery 114 to the power supply circuit. That is, the power consumption of the RFID can be reduced by intermittently supplying power from the battery 114 to the signal control circuit.

In the RFID of the present invention, the power consumption can be sufficiently reduced by transmitting a signal at a constant cycle rate relative to the signal from the reader / writer. In addition, the radio signal input from the outside of the RFID is received by the antenna circuit, and the electric power supplied to the signal control circuit is periodically supplied from the antenna circuit by storing the electric power in the battery in the power supply circuit. It becomes possible to operate without. Further, by comparing the power of the received signal from the antenna circuit with the power stored in the battery by the control circuit, it is possible to further select the power supply from the rectifier circuit or the power supply circuit from the battery. This is preferable because low power consumption can be achieved.

  As described above, a semiconductor device having an RFID of the present invention has a battery. As a result, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention includes an antenna that receives a signal for supplying power to the battery. Therefore, the battery can be charged by using an external wireless signal as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

Note that this embodiment can be implemented in free combination with the description of the other embodiments in this specification.
(Embodiment 2)

  In this embodiment mode, in the semiconductor device that is an RFID shown in Embodiment Mode 1, selection is made between using power from the rectifier circuit or power from the battery as power supplied to the power supply circuit in the power supply circuit. A configuration including a control circuit for controlling the above will be described with reference to the drawings. Note that in the drawings used in this embodiment, the same portions as those in Embodiment 1 may be denoted by the same reference numerals.

  One structural example of the semiconductor device of the present invention in this embodiment will be described with reference to block diagrams shown in FIGS. Note that in this embodiment, the case where a semiconductor device is used as an RFID will be described.

10 includes an antenna circuit 102, a power supply circuit 103, and a signal control circuit 104. The signal control circuit 104 includes an amplification circuit 105, a demodulation circuit 106, a logic circuit 107, a memory control circuit 108, a memory circuit 109, a logic circuit 110, an amplification circuit 111, and a modulation circuit 112. The power supply circuit 103 includes a rectifier circuit 113, a control circuit 1001, a battery 114, a low frequency signal generation circuit 115, a switch circuit 116, and a power supply circuit 117. The difference from the configuration of FIG. 1 in Embodiment 1 is that the control circuit 1001 is between the rectifier circuit 113 and the battery 114.

FIG. 11 illustrates a block diagram in which a signal is transmitted and received between the antenna circuit 102 and the reader / writer 201 and charging is performed based on the signal from the reader / writer 201. In FIG. 11, a signal received by the antenna circuit 102 is input to the power supply circuit 103 and the signal control circuit 104.

In FIG. 11, a signal input from the antenna circuit 102 to the power supply circuit 103 is input to the power supply circuit 117 through the rectifier circuit 113 and the switch circuit 116. In FIG. 11, a signal received by the antenna circuit 102 is input to the battery 114 via the rectifier circuit 113 and the control circuit 1001, and the battery 114 is charged.

In FIG. 11, a signal input from the antenna circuit 102 to the signal control circuit 104 is output to the demodulation circuit 106 via the amplifier circuit 105, demodulated by the demodulation circuit 106, and then the logic circuit 107 and the memory control circuit 108. The signal is input to the modulation circuit 112 via the memory circuit 109, the logic circuit 110, and the amplification circuit 111, modulated by the modulation circuit 112, and then transmitted from the antenna circuit 102 to the reader / writer 201.

  Note that the antenna circuit 102 may have the structure illustrated in FIG. 4A described in Embodiment 1. In addition, the rectifier circuit 113 may have the structure illustrated in FIG. 4B described in Embodiment 1.

  The antenna circuit 102 in FIGS. 10 and 11 is similar to the description of the antenna circuit 102 described in Embodiment Mode 1, and thus description thereof is omitted here.

  Note that as an example of the shape of the antenna provided in the antenna circuit 102, the shape shown in FIG. 3 described in Embodiment Mode 1 may be used, which is similar to the above description and is omitted here.

In addition, FIG. 12 shows a configuration in which the antenna circuit is increased in the RFID in the configuration shown in FIGS. The configuration shown in FIG. 12 corresponds to the configuration of FIG. 5 shown in the first embodiment. Therefore, this is the same as the description of FIG. 5 described in Embodiment 1, and is omitted here.

The configuration of the power supply circuit 117 in FIGS. 10 and 11 is the same as the description of the power supply circuit 117 described in Embodiment Mode 1 and the configuration of FIG.

In the present embodiment, in the power supply circuit 103, when the power output from the rectifier circuit 113 is sufficiently larger than the power required to operate the signal control circuit 104, the surplus of the power output from the rectifier circuit When the electric power is stored in the battery and the electric power output from the rectifier circuit is not sufficient to operate the signal control circuit, the battery control unit has control means for supplying electric power from the battery to the power supply circuit.

In this embodiment mode, power control to the power supply circuit can be realized by connecting the battery 114 to the rectifier circuit 113 via the control circuit 1001. By connecting the battery 114 to the rectifier circuit 113, surplus power is stored in the battery 114, and when the power output from the rectifier circuit 113 decreases, power is supplied from the battery 114 to the power supply circuit 117.

An example of the control circuit 1001 illustrated in FIGS. 10 and 11 will be described with reference to FIG.

In FIG. 13, the control circuit 1001 includes a rectifying element 1394, a rectifying element 1395, a voltage comparison circuit 1391, a switch 1392, and a switch 1393.

In FIG. 13, the voltage comparison circuit 1391 compares the voltage output from the battery 114 with the voltage output from the rectifier circuit 113. When the voltage output from the rectifier circuit 113 is sufficiently higher than the voltage output from the battery 114, the voltage comparison circuit 1391 turns on the switch 1392 and turns off the switch 1393. Then, a current flows from the rectifier circuit 113 to the battery 114 via the rectifier element 1394 and the switch 1392. On the other hand, when the voltage output from the rectifier circuit 113 is not sufficiently high compared to the voltage output from the battery 114, the voltage comparison circuit 1391 turns off the switch 1392 and turns on the switch 1393. At this time, if the voltage output from the rectifier circuit 113 is higher than the voltage output from the battery 114, no current flows through the rectifier element 1395, but the voltage output from the rectifier circuit 113 is the voltage output from the battery 114. If lower, a current flows from the battery 114 to the power supply circuit 117 via the switch 1393, the rectifier element 1395, and the switch circuit 116.

Note that the control circuit 1001 is not limited to the structure described in this embodiment mode, and other types may be used.

An example of the voltage comparison circuit 1391 described with reference to FIG. 13 will be described with reference to FIG.

In the configuration illustrated in FIG. 14, the voltage comparison circuit 1391 divides the voltage output from the battery 114 by the resistance elements 1403 and 1404, and the voltage output from the rectifier circuit 113 is generated by the resistance elements 1401 and 1402. The resistance is divided, and the potential obtained by the resistance division is input to the comparator 1405. An inverter type buffer circuit 1406 and a buffer circuit 1407 are connected in series to the output of the comparator 1405. The output of the buffer circuit 1406 is input to the control terminal of the switch 1393 in FIG. 13, the output of the buffer circuit 1407 is input to the control terminal of the switch 1392 in FIG. 13, and the switches 1392 and 1393 in FIG. To control. Note that the switch 1392 and the switch 1393 in FIG. 13 are turned on when the signal input to the control terminal is at the H level and turned off when the signal is at the L level.

Further, in the configuration shown in FIG. 14, when the voltage output from the battery 114 becomes higher than the voltage output from the battery 114 by dividing the resistance and adjusting the voltage input to the comparator 1405, the switch Whether the switch 1392 is turned on and the switch 1393 is turned off can be controlled.

Note that the voltage comparison circuit 1391 is not limited to the structure described in this embodiment mode, and other types may be used.

The reader / writer 201 stores data stored in the memory circuit 109 in the signal control circuit 104 of the RFID 101 and the operation when data is written to the signal control circuit 104 of the RFID 101 shown in FIGS. Since the calling operation is the same as the operation in FIGS. 1 and 2 described in the first embodiment, the description thereof is omitted in this embodiment.

  Next, an operation when the RFID 101 shown in FIGS. 10 and 11 is charged with power from an external wireless signal will be described below. The external radio signal received by the antenna circuit 102 is half-wave rectified and smoothed by the rectifier circuit 113.

Then, the control circuit 1001 compares the voltage output from the battery 114 with the voltage output from the rectifier circuit 113. If the voltage output from the rectifier circuit 113 is sufficiently higher than the voltage output from the battery 114, the rectifier circuit 113 and the battery 114 are connected. At this time, power output from the rectifier circuit 113 is supplied to both the battery 114 and the power supply circuit 117, and surplus power is stored in the battery 114.

The control circuit 1001 connects the power supply circuit 117 and the battery 114 when the voltage output from the rectifier circuit 113 is not sufficiently higher than the voltage output from the battery 114. At this time, when the voltage output from the rectifier circuit 113 is higher than the voltage output from the battery 114, the power output from the rectifier circuit 113 is supplied to the power supply circuit 117, and charging of the battery and consumption of the battery power are not performed. Absent. When the voltage output from the rectifier circuit 113 becomes lower than the voltage output from the battery 114, power is supplied from the battery 114 to the power supply circuit. That is, the control circuit 1001 controls the direction of current according to the voltage output from the rectifier circuit 113 and the voltage output from the battery 114.

Further, as described above, in the present invention, the switch circuit 116 is turned on and off by the output signal of the low frequency signal generation circuit 115, and the RFID is operated intermittently to reduce power consumption. In general, an RFID always operates with respect to a signal. However, depending on the contents of data and application, there is a case where it is not always necessary to respond. In such a case, the consumption of electric power stored in the battery can be reduced by stopping the operation of the RFID.

Note that the configuration and timing chart of the low-frequency signal generation circuit in this embodiment are the same as those in FIGS. 7, 8, and 9 described in Embodiment 1, and the description thereof. Will not be described.

In this way, in the RFID of the present invention, it is possible to sufficiently reduce power consumption by transmitting a signal at a constant period with respect to a signal from a reader / writer. In addition, a radio signal input from the outside of the RFID is received by the antenna circuit, and the electric power supplied to the signal control circuit is periodically supplied from the antenna circuit by storing the electric power in the battery in the power supply circuit. RFID can be operated without any problems. Also, the power of the received signal input from the antenna circuit and the power stored in the battery are compared by the control circuit, so that power is supplied from the rectifier circuit to the power circuit, or power is supplied from the battery to the power circuit. It is preferable to select whether or not to further reduce the power consumption of the battery.

As described above, a semiconductor device having an RFID of the present invention has a battery. Therefore, it is possible to prevent a shortage of electric power for transmitting / receiving individual information associated with deterioration of the battery over time, which has been regarded as a problem in the past. The semiconductor device of the present invention includes an antenna that receives a signal for supplying power to the battery. Therefore, the battery can be charged using an external radio signal as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without checking the remaining capacity of the battery or replacing the battery as in the active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

Note that this embodiment can be implemented in free combination with the description of the other embodiments in this specification.
(Embodiment 3)

  In this embodiment, a structure including a booster antenna circuit (hereinafter referred to as a booster antenna) in the semiconductor device including the RFID described in Embodiment 1 is described with reference to drawings. Note that in the drawings used in this embodiment, the same portions as those in Embodiment 1 are denoted by the same reference numerals.

Note that the booster antenna described in this embodiment refers to an antenna circuit (hereinafter referred to as a booster antenna) that is larger in size than an antenna circuit that receives a signal from a reader / writer or a wireless signal such as a charger. . It means that the signal oscillated from the reader / writer or the charger can be efficiently transmitted to the target RFID by resonating in the frequency band in which the antenna circuit and the booster antenna are used and magnetically coupled. Since the booster antenna is coupled to the coil antenna via a magnetic field, it is preferable that the booster antenna does not need to be directly connected to the chip antenna and the signal control circuit.

A semiconductor device used for the RFID in this embodiment will be described with reference to a block diagram shown in FIG.

15 includes an antenna circuit 102, a booster antenna 1501, a power supply circuit 103, and a signal control circuit 104. The signal control circuit 104 includes an amplification circuit 105, a demodulation circuit 106, a logic circuit 107, a memory control circuit 108, a memory circuit 109, a logic circuit 110, an amplification circuit 111, and a modulation circuit 112. The power supply circuit 103 includes a rectifier circuit 113, a battery 114, a low frequency signal generation circuit 115, a switch circuit 116, and a power supply circuit 117. FIG. 15 is a block diagram showing that signals are transmitted and received between the antenna circuit 102 and the reader / writer 201 via the booster antenna, and charging is performed based on the signal from the reader / writer 201. But there is. The difference from the configuration of FIG. 2 in Embodiment 1 is that the booster antenna 1501 is between the reader / writer 201 and the antenna circuit 102.

In FIG. 15, in the RFID 101, a booster antenna 1501 receives a signal from the reader / writer 201, and a signal from the reader / writer is received by the antenna circuit 102 by magnetic coupling between the antenna circuit 102 and the booster antenna 1501. In FIG. 15, a signal input from the antenna circuit 102 to the power supply circuit 103 is input to the power supply circuit 117 via the rectifier circuit 113 and the switch circuit 116. In FIG. 15, a signal received by the antenna circuit 102 is input to the battery 114 via the rectifier circuit 113, and the battery 114 is charged.

In FIG. 15, a signal input from the antenna circuit 102 to the signal control circuit 104 is demodulated by the demodulation circuit 106 via the amplifier circuit 105, and the logic circuit 107, the memory control circuit 108, the memory circuit 109, the logic circuit 110, The signal is modulated by the modulation circuit 112 through the amplifier circuit 111 and transmitted from the antenna circuit 102 to the reader / writer 201.

  Note that the antenna circuit 102 may have the structure illustrated in FIG. 4A described in Embodiment 1. In addition, the rectifier circuit 113 may have the structure illustrated in FIG. 4B described in Embodiment 1.

  15 is similar to the description of the antenna circuit 102 described in Embodiment Mode 1, and thus description thereof is omitted here.

In this embodiment, when the antenna circuit 102 receives a signal via the booster antenna 1501, the signal is communicated by an electromagnetic induction method. Therefore, the RFID 101 in FIG. 15 includes a coiled antenna circuit 102 and a booster antenna 1501. In FIG. 15, when the coiled antenna in the antenna circuit of the reader / writer 201 and the booster antenna 1501 of the RFID 101 are brought close to each other, an alternating magnetic field is generated from the coiled antenna of the antenna circuit in the reader / writer 201. An alternating magnetic field passes through the coiled booster antenna 1501 in the RFID 101, and an electromotive force is generated between terminals of the coiled booster antenna in the RFID 101 (between one end and the other end of the antenna) due to electromagnetic induction. In the coiled booster antenna 1501, an electromotive force is generated by electromagnetic induction, and an alternating magnetic field is generated from the booster antenna itself. An alternating magnetic field generated from the booster antenna 1501 passes through the coiled antenna circuit 102 in the RFID 101 and is generated between terminals of the coiled antenna circuit 102 in the RFID 101 (between one end and the other end of the antenna) by electromagnetic induction. Electric power is generated. In this way, the RFID 101 can obtain a signal and an electromotive force from the reader / writer 201.

In the present embodiment, the configuration including the booster antenna of FIG. 15 can increase the communication distance for transmission / reception of signals between the reader / writer 201 and the RFID 101, and can more reliably exchange signals. Therefore, it is preferable.

Further, like the antenna circuit shown in FIG. 5 of Embodiment Mode 1, the first antenna circuit 301 is used for transmitting / receiving a signal to / from the reader / writer 201, and the second antenna circuit 302 is used for receiving a radio signal from the charger 303. And a booster antenna may be used for transmission / reception of signals between the first antenna circuit 301 and the reader / writer 201. As an example, FIG. 16 illustrates a structure including a first antenna circuit 301, a second antenna circuit 302, and a charger 303. It is preferable that the signal oscillated from the reader / writer 201 can be efficiently transmitted to the target RFID by resonating in the frequency band in which the antenna circuit and the booster antenna are used and magnetically coupled.

In the configuration shown in FIG. 16, the tuning of the booster antenna 1501 is not limited to the first antenna circuit 301, but can be magnetically coupled to another antenna by changing the frequency band in which the booster antenna 1501 is tuned. For example, in the configuration shown in FIG. 16, the booster antenna 1501 receives a signal from the charger 303 and magnetically couples with the second antenna circuit 302 to transmit the signal from the charger to the second antenna. Good.

Note that in the configuration shown in FIG. 16, the tuning of the booster antenna 1501 is not limited to either the first antenna circuit 301 or the second antenna circuit 302. It can also be magnetically coupled to the antenna. For example, in the configuration shown in FIG. 16, the booster antenna 1501 receives signals from the reader / writer 201 and the charger 303 and magnetically couples with the first antenna circuit 301 and the second antenna circuit 302 so that the reader / writer The structure which transmits / receives the signal of and the signal from a charger may be sufficient. In this case, it is preferable to make the frequency with which the first antenna circuit 301 and the second antenna circuit 302 are tuned close to each other because the efficiency of electromagnetic induction in the booster antenna 1501 is further increased. Therefore, the frequency m (m is a positive number) of a signal transmitted and received between the second antenna circuit 302 and the charger 303 is the frequency M of the signal transmitted and received by the first antenna circuit 301 (M is a positive number). Number), it is desirable that the frequency satisfies the relationship of 0.5 m <M <1.5 m and satisfies m ≠ M. In addition to the effects described above, the shapes of the first antenna circuit 301 and the second antenna circuit 302 can be greatly different by setting the frequency of the signal input to the second antenna circuit 302 within the above-described range. It is possible to design without any problem. That is, it is possible to increase the communication distance for transmission / reception of signals between the reader / writer 201 and the RFID 101 and transmission / reception of signals between the charger 303 and the RFID 101, and it is possible to more reliably exchange data and charge the battery 114. This is preferable.

Further, an operation for writing data from the reader / writer 201 to the signal control circuit 104 of the RFID 101 shown in FIG. 15 and an operation for the reader / writer 201 to call data stored in the memory circuit 109 in the signal control circuit 104 of the RFID 101 are shown. Is the same as the operation in FIG. 1 and FIG. 2 described in the first embodiment except that the signal from the reader / writer 201 is input to the antenna circuit via the booster antenna. Is omitted.

15 is the same as the description of the operation in FIG. 1 described in the first embodiment because the operation when charging the RFID 101 shown in FIG. 15 from an external wireless signal is the same in the present embodiment. Is omitted.

The configuration and timing chart of the low-frequency signal generation circuit in this embodiment are the same as those in FIGS. 7, 8, and 9 described in Embodiment 1 and the description thereof. The description is omitted.

Note that in this embodiment mode, a control circuit in the power supply circuit 103 described in Embodiment Mode 2 may be provided. By using the configuration having the control circuit in this embodiment, in addition to the effect of the configuration in which the booster antenna is provided, the control circuit compares the power of the reception signal from the antenna circuit with the power stored in the battery. It is preferable that the power consumption in the battery can be further reduced by selecting whether the power is supplied from the rectifier circuit or from the battery to the power supply circuit.

As described above, a semiconductor device having an RFID of the present invention has a battery. As a result, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention includes an antenna that receives a signal for supplying power to the battery. For this reason, the battery can be charged by using the power of the radio wave or electromagnetic wave from the outside as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

Further, as described above, in the present invention, the switch circuit 116 is turned on and off by the output signal of the low frequency signal generation circuit 115, and the RFID is operated intermittently to reduce power consumption. In general, an RFID always operates with respect to a signal. However, depending on the contents of data and application, there is a case where it is not always necessary to respond. In such a case, by stopping the operation of the RFID, power consumption in a battery or a large-capacity capacitor can be reduced.

Further, the configuration of this embodiment is characterized by having a booster antenna in addition to the configuration of the first embodiment. Therefore, there is an advantage that more reliable communication can be performed with respect to transmission / reception of data between the RFID and the reader / writer and reception of a signal for charging from the RFID and the charger.

  Note that this embodiment can be implemented in free combination with the description of the other embodiments in this specification.

In this embodiment, an example of a battery in a semiconductor device (hereinafter referred to as RFID) that transmits and receives data by wireless communication according to the present invention will be described. In this specification, a battery is used to recover continuous use time by charging. A battery that can be used. As the battery, a battery formed in a sheet shape is preferably used. For example, a lithium battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery, or the like can be used to reduce the size. Of course, any rechargeable battery may be used, and a chargeable / dischargeable battery such as a nickel metal hydride battery or a nickel-cadmium battery may be used, or a large-capacity capacitor may be used.

In this embodiment, an example of a lithium ion battery will be described as a battery. Lithium ion batteries are widely used because they have no memory effect and have a large amount of current compared to nickel-cadmium batteries, lead batteries, and the like. In recent years, lithium ion batteries have been studied for thinning, and those having a thickness of 1 μm to several μm are being made (hereinafter referred to as thin film secondary batteries). By sticking such a thin film secondary battery to an RFID or the like, it can be used as a flexible secondary battery.

  FIG. 17 shows an example of a thin film secondary battery that can be used as the battery of the present invention. The example shown in FIG. 17 is a cross-sectional example of a lithium ion thin film battery.

The stacked structure in FIG. 17 will be described. A current collector thin film 7102 to be an electrode is formed over the substrate 7101 in FIG. The current collector thin film 7102 is required to have good adhesion to the negative electrode active material layer 7103 and low resistance, and aluminum, copper, nickel, vanadium, or the like can be used. Next, a negative electrode active material layer 7103 is formed over the current collector thin film 7102. In general, vanadium oxide (V 2 O 5 ) or the like is used. Next, a solid electrolyte layer 7104 is formed over the negative electrode active material layer 7103. In general, lithium phosphate (Li 3 PO 4 ) or the like is used. Next, a positive electrode active material layer 7105 is formed over the solid electrolyte layer 7104. Generally, lithium manganate (LiMn 2 O 4 ) or the like is used. Lithium cobaltate (LiCoO 2 ) or lithium nickelate (LiNiO 2 ) may be used. Next, a current collector thin film 7106 to be an electrode is formed over the positive electrode active material layer 7105. The current collector thin film 7106 is required to have good adhesion to the positive electrode active material layer 7105 and low resistance, and aluminum, copper, nickel, vanadium, or the like can be used.

Note that the current collector thin film 7102, the negative electrode active material layer 7103, the solid electrolyte layer 7104, the positive electrode active material layer 7105, and the current collector thin film 7106 may be formed using a sputtering technique or a vapor deposition technique. May be used. In addition, the thickness of the current collector thin film 7102, the negative electrode active material layer 7103, the solid electrolyte layer 7104, the positive electrode active material layer 7105, and the current collector thin film 7106 is preferably 0.1 μm to 3 μm.

  Next, the operation during charging and discharging will be described below. During charging, lithium is released from the positive electrode active material as ions. The lithium ions are absorbed by the negative electrode active material through the solid electrolyte layer. At this time, electrons are emitted from the positive electrode active material to the outside.

Further, during discharge, lithium is separated from the negative electrode active material as ions. The lithium ions are absorbed by the positive electrode active material through the solid electrolyte layer. At this time, electrons are emitted from the negative electrode active material layer to the outside. In this way, the thin film secondary battery operates.

Note that by forming the current collector thin film 7102, the negative electrode active material layer 7103, the solid electrolyte layer 7104, the positive electrode active material layer 7105, and the current collector thin film 7106 again, charging and discharging with higher power is possible. This is preferable.

As described above, by forming a thin film secondary battery, a sheet-like battery that can be charged and discharged can be formed.

  This embodiment can be freely combined with the above embodiment mode and other embodiments. That is, by periodically charging the battery, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention is characterized in that when charging a battery, the antenna circuit provided in the RFID receives power and charges the battery. For this reason, the battery can be charged by using the power of the radio wave or electromagnetic wave from the outside as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

In addition to the advantages provided by the battery, the semiconductor device of the present invention is provided with a switch circuit in a power supply circuit that supplies power to a signal control circuit that transmits / receives individual information to / from the outside. The power supply to the control circuit is controlled. By controlling the power supply to the signal control circuit in the switch circuit provided in the power supply circuit, the RFID operation can be performed intermittently. Therefore, it is possible to reduce power consumption in the battery and to operate for a long time without supplying power by a wireless signal.

  In this example, an example of a manufacturing method when the semiconductor device of the present invention described in the above embodiment mode is used as an RFID will be described with reference to drawings. In this embodiment, a structure in which an antenna circuit, a power supply circuit, and a signal control circuit are provided over the same substrate will be described. Note that it is preferable that an antenna circuit, a power supply circuit, and a signal control circuit be formed over the substrate at once, and the transistors constituting the power supply circuit and the signal control circuit be thin film transistors, which can be downsized. . In this embodiment, an example in which the thin film secondary battery described in the above embodiment is used as the battery in the power supply circuit will be described.

  Note that in this example, the antenna circuit described in the above embodiment is simply referred to as an antenna because only the shape and the mounting position thereof are described.

  First, a separation layer 1303 is formed over one surface of a substrate 1301 with an insulating film 1302 interposed therebetween, and then an insulating film 1304 functioning as a base film and a semiconductor film 1305 (for example, a film containing amorphous silicon) are stacked. It is formed (see FIG. 18A). Note that the insulating film 1302, the separation layer 1303, the insulating film 1304, and the amorphous semiconductor film 1305 can be formed successively.

  The substrate 1301 is selected from a glass substrate, a quartz substrate, a metal substrate (for example, a stainless steel substrate), a ceramic substrate, a semiconductor substrate such as a Si substrate, and the like. In addition, a substrate such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), or acrylic can be selected as the plastic substrate. Note that in this step, the separation layer 1303 is provided over the entire surface of the substrate 1301 with the insulating film 1302 interposed therebetween. However, if necessary, after the separation layer is provided over the entire surface of the substrate 1301, the separation layer 1303 can be selectively formed by a photolithography method. May be provided.

  The insulating films 1302 and 1304 are formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y>) by a CVD method, a sputtering method, or the like. 0) or the like. For example, in the case where the insulating films 1302 and 1304 have a two-layer structure, a silicon nitride oxide film may be formed as the first insulating film and a silicon oxynitride film may be formed as the second insulating film. Alternatively, a silicon nitride film may be formed as the first insulating film, and a silicon oxide film may be formed as the second insulating film. The insulating film 1302 functions as a blocking layer that prevents an impurity element from being mixed into the separation layer 1303 or an element formed thereon from the substrate 1301, and the insulating film 1304 is formed over the substrate 1301 and the separation layer 1303. It functions as a blocking layer that prevents an impurity element from entering the device. In this manner, by forming the insulating films 1302 and 1304 functioning as blocking layers, an alkali metal such as Na or alkaline earth metal from the substrate 1301 and an impurity element contained in the release layer from the release layer 1303 are formed thereon. It is possible to prevent an adverse effect on an element to be formed. Note that the insulating films 1302 and 1304 may be omitted when quartz is used for the substrate 1301.

For the separation layer 1303, a metal film, a stacked structure of a metal film and a metal oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), An element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or a film made of an alloy material or compound material containing the element as a main component, or a single layer. Form. These materials can be formed by using various CVD methods such as a sputtering method and a plasma CVD method. A stacked structure of a metal film and a metal oxide film, after forming a metal film described above, the plasma treatment in or under N 2 O atmosphere an oxygen atmosphere, by performing heat treatment in or under N 2 O atmosphere an oxygen atmosphere The oxide or oxynitride of the metal film can be provided on the surface of the metal film. For example, in the case where a tungsten film is provided as a metal film by a sputtering method, a CVD method, or the like, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In this case, the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO 2 ), X is 2.5 (W 2 O 5 ), and X is In the case of 2.75 (W 4 O 11 ), X is 3 (WO 3 ), and the like. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. In addition, for example, after a metal film (for example, tungsten) is formed, an insulating film such as silicon oxide (SiO 2 ) is provided on the metal film by a sputtering method, and a metal oxide (for example, for example, Tungsten oxide) may be formed over tungsten. Further, as the plasma treatment, for example, the above-described high-density plasma treatment may be performed. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or a nitrogen and oxygen atmosphere.

  The amorphous semiconductor film 1305 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a sputtering method, an LPCVD method, a plasma CVD method, or the like.

  Next, crystallization is performed by irradiating the amorphous semiconductor film 1305 with laser light. Note that the amorphous semiconductor film 1305 is crystallized by a combination of laser light irradiation, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like. You may go. After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 1305a to 1305f, and a gate insulating film 1306 is formed so as to cover the semiconductor films 1305a to 1305f (FIG. 18 ( B)).

  The gate insulating film 1306 is formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y> 0), or the like using a CVD method, a sputtering method, or the like. The insulating material is used. For example, in the case where the gate insulating film 1306 has a two-layer structure, a silicon oxynitride film may be formed as the first insulating film and a silicon nitride oxide film may be formed as the second insulating film. Alternatively, a silicon oxide film may be formed as the first insulating film, and a silicon nitride film may be formed as the second insulating film.

  An example of a manufacturing process of the crystalline semiconductor films 1305a to 1305f will be briefly described below. First, an amorphous semiconductor film with a thickness of 50 to 60 nm is formed using a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. After that, laser light is irradiated and crystalline semiconductor films 1305a to 1305f are formed by using a photolithography method. Note that the amorphous semiconductor film may be crystallized only by laser light irradiation without performing thermal crystallization using a metal element that promotes crystallization.

As a laser oscillator used for crystallization, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as Ar laser, Kr laser, or excimer laser, single crystal YAG, YVO 4 , forsterite (Mg 2 SiO 4 ), YAlO 3 , GdVO 4 , or polycrystalline ( (Ceramics) YAG, Y 2 O 3 , YVO 4 , YAlO 3 , GdVO 4 with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants Lasers oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO 4 laser (fundamental wave 1064 nm) can be used. In this case, a laser power density is about 0.01 to 100 MW / cm 2 (preferably 0.1 to 10 MW / cm 2) is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO 4 , forsterite (Mg 2 SiO 4 ), YAlO 3 , GdVO 4 , or polycrystalline (ceramic) YAG, Y 2 O 3 , YVO 4 , YAlO 3 , GdVO 4 , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as a medium, a laser, Ar ion laser, or Ti: sapphire laser with one or more added as a medium should be continuously oscillated It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

Alternatively, the gate insulating film 1306 may be formed by performing the above-described high-density plasma treatment on the semiconductor films 1305a to 1305f and oxidizing or nitriding the surface. For example, it is formed by plasma treatment in which a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO 2 ), ammonia, nitrogen, or hydrogen are introduced. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

  By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the thickness of the formed insulating film ideally has extremely small variation. can do. In addition, since oxidation is not strengthened even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

  As the gate insulating film, only an insulating film formed by high-density plasma treatment may be used, or an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride is deposited by a CVD method using plasma or thermal reaction. , May be laminated. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

  Further, the semiconductor films 1305a to 1305f obtained by scanning and crystallizing in one direction while irradiating the semiconductor film with a continuous wave laser beam or a laser beam oscillating at a frequency of 10 MHz or more are in the scanning direction of the beam. There is a characteristic that crystals grow. By arranging the transistors in accordance with the scanning direction in the channel length direction (the direction in which carriers flow when a channel formation region is formed) and combining the gate insulating layer, characteristic variation is small and field effect mobility is reduced. A high thin film transistor (TFT) can be obtained.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 1306. Here, the first conductive film is formed with a thickness of 20 to 100 nm by a CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

  Next, a resist mask is formed using a photolithography method, and an etching process for forming a gate electrode and a gate line is performed, so that a gate electrode 1307 is formed over the semiconductor films 1305a to 1305f. Here, an example in which the gate electrode 1307 has a stacked structure of a first conductive film 1307a and a second conductive film 1307b is shown.

Next, an impurity element imparting n-type conductivity is added to the semiconductor films 1305a to 1305f at a low concentration by ion doping or ion implantation using the gate electrode 1307 as a mask, and then a resist mask is formed by photolithography. An impurity element which is selectively formed and imparts p-type conductivity is added at a high concentration. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus (P) is used as an impurity element imparting n-type conductivity, and is selectively introduced into the semiconductor films 1305a to 1305f so as to be included at a concentration of 1 × 10 15 to 1 × 10 19 / cm 3. An impurity region 1308 indicating a mold is formed. Further, boron (B) is used as an impurity element imparting p-type, and is selectively introduced into the semiconductor films 1305c and 1305e so as to be included at a concentration of 1 × 10 19 to 1 × 10 20 / cm 3. An impurity region 1309 is formed (see FIG. 18C).

  Subsequently, an insulating film is formed so as to cover the gate insulating film 1306 and the gate electrode 1307. The insulating film is formed by a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide or silicon nitride, or a film containing an organic material such as an organic resin, by plasma CVD or sputtering. To do. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction, so that an insulating film 1310 (also referred to as a sidewall) in contact with the side surface of the gate electrode 1307 is formed. The insulating film 1310 is used as a mask for doping when an LDD (Lightly Doped Drain) region is formed.

Subsequently, an impurity element imparting n-type conductivity is added to the semiconductor films 1305a, 1305b, 1305d, and 1305f at a high concentration using a resist mask formed by a photolithography method, the gate electrode 1307, and the insulating film 1310 as masks. Thus, an n-type impurity region 1311 is formed. Here, phosphorus (P) is used as an impurity element imparting n-type conductivity, and the semiconductor films 1305a, 1305b, 1305d, and 1305f are selectively used so as to be included at a concentration of 1 × 10 19 to 1 × 10 20 / cm 3. Then, an impurity region 1311 having an n type concentration higher than that of the impurity region 1308 is formed.

  Through the above steps, n-channel thin film transistors 1300a, 1300b, 1300d, and 1300f and p-channel thin film transistors 1300c and 1300e are formed (see FIG. 18D).

  In the n-channel thin film transistor 1300a, an impurity which forms a channel formation region in a region of the semiconductor film 1305a overlapping with the gate electrode 1307 and forms a source region or a drain region in a region of the semiconductor film 1305a not overlapping with the gate electrode 1307 and the insulating film 1310 A region 1311 is formed, and a low concentration impurity region (LDD region) is formed between the channel formation region and the impurity region 1311 in the region of the semiconductor film 1305a that overlaps with the insulating film 1310. Similarly, channel formation regions, low-concentration impurity regions, and impurity regions 1311 are also formed in the n-channel thin film transistors 1300b, 1300d, and 1300f.

  In the p-channel thin film transistor 1300c, a channel formation region is formed in a region of the semiconductor film 1305c that overlaps with the gate electrode 1307, and an impurity region 1309 that forms a source region or a drain region is formed in a region of the semiconductor film 1305c that does not overlap with the gate electrode 1307. Has been. Similarly, the channel formation region and the impurity region 1309 are formed in the p-channel thin film transistor 1300e. Note that although the LDD region is not provided in the p-channel thin film transistors 1300c and 1300e here, an LDD region may be provided in the p-channel thin film transistor, or an LDD region may not be provided in the n-channel thin film transistor. Good.

  Next, an insulating film is formed as a single layer or a stacked layer so as to cover the semiconductor films 1305a to 1305f, the gate electrode 1307, and the like, and an impurity region that forms a source region or a drain region of the thin film transistors 1300a to 1300f A conductive film 1313 which is electrically connected to 1309 and 1311 is formed (see FIG. 19A). Insulating film is formed by CVD, sputtering, SOG, droplet discharge, screen printing, etc., inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, etc. A single layer or a stacked layer is formed using an organic material, a siloxane material, or the like. Here, the insulating film is provided in two layers, and a silicon nitride oxide film is formed as the first insulating film 1312a, and a silicon oxynitride film is formed as the second insulating film 1312b. The conductive film 1313 can form a source electrode or a drain electrode of the thin film transistors 1300a to 1300f.

  Note that before the insulating films 1312a and 1312b are formed or after one or more thin films of the insulating films 1312a and 1312b are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  The conductive film 1313 is formed by a CVD method, a sputtering method, or the like by aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper ( Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or an alloy material containing these elements as a main component or The compound material is formed as a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. For the conductive film 1313, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride film, and a barrier film may be employed. . Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 1313 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

  Next, an insulating film 1314 is formed so as to cover the conductive film 1313, and conductive films that are electrically connected to the conductive film 1313 that forms source and drain electrodes of the thin film transistors 1300 a and 1300 f over the insulating film 1314, respectively. 1315a and 1315b are formed. In addition, a conductive film 1316 that is electrically connected to the conductive film 1313 that forms the source electrode or the drain electrode of the thin film transistor 1300b is formed. Note that the conductive films 1315a and 1315b and the conductive film 1316 may be formed using the same material at the same time. The conductive films 1315a and 1315b and the conductive film 1316 can be formed using any of the materials described for the conductive film 1313.

  Next, a conductive film 1317 functioning as an antenna is formed so as to be electrically connected to the conductive film 1316 (see FIG. 19B).

  The insulating film 1314 is formed by silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y>) by CVD or sputtering. 0) and other insulating films having oxygen or nitrogen, films containing carbon such as DLC (diamond-like carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and acrylic, or siloxane materials such as siloxane resin It can be provided in a single layer or laminated structure. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  The conductive film 1317 is formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure.

  For example, when the conductive film 1317 that functions as an antenna is formed using a screen printing method, a conductive paste in which conductive particles having a particle size of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is selected. Can be provided by printing. Conductor particles include silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti). Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins functioning as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the conductive paste. For example, when fine particles containing silver as a main component (for example, a particle size of 1 nm or more and 100 nm or less) are used as a conductive paste material, the conductive film is obtained by being cured by baking in a temperature range of 150 to 300 ° C. Can do. Further, fine particles mainly composed of solder or lead-free solder may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder and lead-free solder have the advantage of low cost.

  In addition, the conductive films 1315a and 1315b can function as wirings that are electrically connected to a battery included in the semiconductor device of the present invention in a later step. Further, when the conductive film 1317 functioning as an antenna is formed, a separate conductive film may be formed so as to be electrically connected to the conductive films 1315a and 1315b, and the conductive film may be used as wiring for connecting to the battery. .

Next, after an insulating film 1318 is formed so as to cover the conductive film 1317, a layer including the thin film transistors 1300 a to 1300 f, the conductive film 1317, and the like (hereinafter referred to as “element formation layer 1319”) is peeled from the substrate 1301. Here, after an opening is formed in a region avoiding the thin film transistors 1300a to 1300f by irradiating laser light (for example, UV light) (see FIG. 12C), the element is removed from the substrate 1301 using physical force. The formation layer 1319 can be peeled off. Alternatively, before the element formation layer 1319 is peeled from the substrate 1301, an etching agent may be introduced into the formed opening to selectively remove the peeling layer 1303. As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF 3 ) is used as a gas containing halogen fluoride. Then, the element formation layer 1319 is peeled from the substrate 1301. Note that a part of the peeling layer 1303 may be left without being removed. By doing so, it is possible to suppress the consumption of the etching agent and shorten the processing time required for removing the release layer. Further, the element formation layer 1319 can be held over the substrate 1301 even after the peeling layer 1303 is removed. In addition, cost can be reduced by reusing the substrate 1301 from which the element formation layer 1319 is peeled.

  The insulating film 1318 is formed by silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y>) by a CVD method, a sputtering method, or the like. 0) and other insulating films having oxygen or nitrogen, films containing carbon such as DLC (diamond-like carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and acrylic, or siloxane materials such as siloxane resin It can be provided in a single layer or laminated structure.

  In this embodiment, after an opening is formed in the element formation layer 1319 by laser light irradiation, the first sheet material 1320 is attached to one surface of the element formation layer 1319 (the surface where the insulating film 1318 is exposed). After the alignment, the element formation layer 1319 is peeled from the substrate 1301 (see FIG. 20A).

  Next, the second sheet material 1321 is attached to the other surface (the surface exposed by peeling) of the element formation layer 1319 by performing one or both of heat treatment and pressure treatment (see FIG. 20B). . As the first sheet material 1320 and the second sheet material 1321, a hot melt film or the like can be used.

  In addition, as the first sheet material 1320 and the second sheet material 1321, films provided with antistatic measures for preventing static electricity or the like (hereinafter referred to as antistatic films) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, surfactants such as metals, oxides of indium and tin (ITO), amphoteric surfactants, cationic surfactants and nonionic surfactants can be used. . In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  Note that the battery is formed by connecting the thin film secondary battery described in Embodiment 1 to the conductive films 1315a and 1315b. Before the element formation layer 1319 is peeled from the substrate 1301, the battery is connected (see FIG. 19 (B) or FIG. 19 (C), or after the element formation layer 1319 is peeled from the substrate 1301 (stage (A) of FIG. 20), or the element formation layer. You may perform after sealing 1319 with the 1st sheet material and the 2nd sheet material (the stage of Drawing 20 (B)). Hereinafter, an example in which the element formation layer 1319 and the battery are connected to each other will be described with reference to FIGS.

  In FIG. 19B, conductive films 1331a and 1331b which are electrically connected to the conductive films 1315a and 1315b, respectively, are formed at the same time as the conductive film 1317 functioning as an antenna. Subsequently, after an insulating film 1318 is formed so as to cover the conductive films 1317 and 1331a and 1331b, openings 1332a and 1332b are formed so that the surfaces of the conductive films 1331a and 1331b are exposed. Then, after an opening is formed in the element formation layer 1319 by laser light irradiation, the first sheet material 1320 is bonded to one surface of the element formation layer 1319 (the exposed surface of the insulating film 1318). The element formation layer 1319 is peeled from the substrate 1301 (see FIG. 21A).

  Next, after the second sheet material 1321 is attached to the other surface (the surface exposed by peeling) of the element formation layer 1319, the element formation layer 1319 is peeled from the first sheet material 1320. Therefore, here, the first sheet material 1320 having weak adhesive force is used. Subsequently, conductive films 1334a and 1334b that are electrically connected to the conductive films 1331a and 1331b through the openings 1332a and 1332b, respectively, are selectively formed (see FIG. 21B).

  The conductive films 1334a and 1334b are formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure.

  Note that here, the conductive films 1334a and 1334b are formed after the element formation layer 1319 is peeled from the substrate 1301, but the element formation layer 1319 is peeled from the substrate 1301 after the conductive films 1334a and 1334b are formed. You may go.

  Next, in the case where a plurality of elements are formed over the substrate, the element formation layer 1319 is divided for each element (see FIG. 22A). For the division, a laser irradiation device, a dicing device, a scribe device, or the like can be used. Here, a plurality of elements formed on one substrate are divided by irradiation with laser light.

  Next, the separated element is electrically connected to the battery (see FIG. 22B). In this example, the thin film secondary battery shown in Example 1 is used as the battery, and a current collector thin film, a negative electrode active material layer, a solid electrolyte layer, a positive electrode active material layer, and a current collector thin film thin film layer. Are sequentially stacked.

  The conductive films 1336a and 1336b are formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure. Note that the conductive film 1334a and the conductive film 1334b correspond to the current collector thin film 7102 described in Embodiment 1. Therefore, the conductive material is required to have good adhesion to the negative electrode active material and low resistance, and aluminum, copper, nickel, vanadium, and the like are particularly preferable.

Next, the structure of the thin film secondary battery will be described in detail. A negative electrode active material layer 1381 is formed over the conductive film 1336a. In general, vanadium oxide (V 2 O 5 ) or the like is used. Next, a solid electrolyte layer 1382 is formed over the negative electrode active material layer 1381. In general, lithium phosphate (Li 3 PO 4 ) or the like is used. Next, a positive electrode active material layer 1383 is formed over the solid electrolyte layer 1382. Generally, lithium manganate (LiMn 2 O 4 ) or the like is used. Lithium cobaltate (LiCoO 2 ) or lithium nickelate (LiNiO 2 ) may be used. Next, a current collector thin film 1384 serving as an electrode is formed over the positive electrode active material layer 1383. The current collector thin film 1384 is required to have good adhesion to the positive electrode active material layer 1383 and low resistance, and aluminum, copper, nickel, vanadium, or the like can be used.

The thin film layers of the negative electrode active material layer 1381, the solid electrolyte layer 1382, the positive electrode active material layer 1383, and the current collector thin film 1384 may be formed by a sputtering technique or a vapor deposition technique. The thickness of each layer is preferably 0.1 μm to 3 μm.

Next, a resin is applied to form an interlayer film 1385. Then, the interlayer film 1385 is etched to form a contact hole. The interlayer film 1385 is not limited to resin, and may be another film such as a CVD oxide film, but is preferably a resin from the viewpoint of flatness. Alternatively, a contact hole may be formed using a photosensitive resin without using etching. Next, a wiring layer 1386 is formed over the interlayer film 1385 and connected to the conductive film 1334b, thereby ensuring electrical connection of the thin film secondary battery.

Here, the conductive films 1334a and 1334b provided in the element formation layer 1319 are connected to the conductive films 1336a and 1336b which serve as connection terminals of the thin film secondary battery 1389 which is a stacked battery, respectively. Here, the conductive film 1334a and the conductive film 1336a or the conductive film 1334b and the conductive film 1336b are connected by an anisotropic conductive film (ACF (Anisotropic Conductive Film)) or an anisotropic conductive paste (ACP (Anisotropic)). The case where it electrically connects by making it crimp through the material which has adhesiveness, such as Conductive Paste)) is shown. Here, an example is shown in which the conductive particles 1338 included in the adhesive resin 1337 are used for connection. In addition, it is also possible to perform connection using a conductive adhesive such as silver paste, copper paste, or carbon paste, solder bonding, or the like.

  When the battery is larger than the element, as shown in FIGS. 21 and 22, a plurality of elements are formed on a single substrate, and the elements are divided and connected to the battery, thereby forming a single substrate. Since the number of elements that can be manufactured can be increased, a semiconductor device can be manufactured at lower cost.

  Note that this embodiment can be freely combined with the above embodiment mode and other embodiments. That is, by periodically charging the battery, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention is characterized in that when charging a battery, the antenna circuit provided in the RFID receives power and charges the battery. For this reason, the battery can be charged by using the power of the radio wave or electromagnetic wave from the outside as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

In addition to the advantages provided by the battery, the semiconductor device of the present invention is provided with a switch circuit in a power supply circuit that supplies power to a signal control circuit that transmits / receives individual information to / from the outside. The power supply to the control circuit is controlled. By controlling the power supply to the signal control circuit in the switch circuit provided in the power supply circuit, the RFID operation can be performed intermittently. Therefore, it is possible to reduce power consumption in the battery and to operate for a long time without supplying power by a wireless signal.

  In this example, an example of a manufacturing method when the semiconductor device of the present invention described in the above embodiment mode is used as an RFID will be described with reference to drawings. In this embodiment, a configuration in which a power supply circuit and a signal control circuit are provided over the same substrate will be described. Note that a transistor with less variation in transistor characteristics is formed by forming a power supply circuit and a signal control circuit over a substrate and using a transistor formed using a single crystal substrate as a transistor constituting the power supply circuit and the signal control circuit. This is preferable because an RFID can be configured. In this embodiment, an example in which the thin film secondary battery described in the above embodiment is used as the battery in the power supply circuit will be described.

  First, regions 2304 and 2306 (hereinafter, also referred to as regions 2304 and 2306) in which elements are separated are formed in the semiconductor substrate 2300 (see FIG. 23A). The regions 2304 and 2306 provided in the semiconductor substrate 2300 are separated by an insulating film 2302 (also referred to as a field oxide film). Here, an example in which a single crystal Si substrate having n-type conductivity is used as the semiconductor substrate 2300 and a p-well 2307 is provided in a region 2306 of the semiconductor substrate 2300 is shown.

  The substrate 2300 can be used without any particular limitation as long as it is a semiconductor substrate. For example, a single crystal Si substrate having an n-type or p-type conductivity, a compound semiconductor substrate (GaAs substrate, InP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by Implanted) An SOI (Silicon on Insulator) substrate manufactured by an Oxygen method or the like can be used.

  For the element isolation regions 2304 and 2306, a selective oxidation method (LOCOS (Local Oxidation of Silicon) method), a trench isolation method, or the like can be used as appropriate.

  The p-well formed in the region 2306 of the semiconductor substrate 2300 can be formed by selectively introducing an impurity element having p-type conductivity into the semiconductor substrate 2300. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used.

  Note that in this embodiment, since a semiconductor substrate having n-type conductivity is used as the semiconductor substrate 2300, no impurity element is introduced into the region 2304, but an impurity element exhibiting n-type is introduced. Thus, an n-well may be formed in the region 2304. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. On the other hand, when a semiconductor substrate having p-type conductivity is used, an n-type impurity element is introduced into the region 2304 to form an n-well, and no impurity element is introduced into the region 2306. Good.

  Next, insulating films 2332 and 2334 are formed so as to cover the regions 2304 and 2306, respectively (see FIG. 23B).

  The insulating films 2332 and 2334 can be formed using a silicon oxide film, for example, by performing heat treatment to oxidize the surfaces of the regions 2304 and 2306 provided in the semiconductor substrate 2300. In addition, after a silicon oxide film is formed by a thermal oxidation method, the surface of the silicon oxide film is nitrided by performing nitriding treatment, so that a silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film) are stacked. You may form with a structure.

  In addition, as described above, the insulating films 2332 and 2334 may be formed by plasma treatment. For example, the surfaces of the regions 2304 and 2306 provided in the semiconductor substrate 2300 are subjected to oxidation treatment or nitridation treatment by high-density plasma treatment, whereby silicon oxide (SiOx) films or silicon nitride (SiNx) films are formed as the insulating films 2332 and 2334. Can be formed. Alternatively, the surface of the regions 2304 and 2306 may be oxidized by high-density plasma treatment, and then nitridation may be performed by performing high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 2304 and 2306, a (silicon oxynitride film) is formed over the silicon oxide film, and the insulating films 2332 and 2334 are formed of a silicon oxide film and a silicon oxynitride film. Becomes a laminated film. Alternatively, after a silicon oxide film is formed on the surfaces of the regions 2304 and 2306 by a thermal oxidation method, oxidation treatment or nitridation treatment may be performed by high-density plasma treatment.

In addition, the insulating films 2332 and 2334 formed in the regions 2304 and 2306 of the semiconductor substrate 2300 function as gate insulating films in transistors to be completed later.

  Next, a conductive film is formed so as to cover the insulating films 2332 and 2334 formed over the regions 2304 and 2306 (see FIG. 23C). Here, an example is shown in which a conductive film 2336 and a conductive film 2338 are sequentially stacked as the conductive film. Needless to say, the conductive film may be formed of a single layer or a stacked structure of three or more layers.

  The conductive films 2336 and 2338 are selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), and the like. Or an alloy material or a compound material containing these elements as main components. Alternatively, a metal nitride film obtained by nitriding these elements can be used. In addition, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus can be used.

  Here, the conductive film 2336 is formed using tantalum nitride, and the conductive film 2338 is formed using tungsten in a stacked structure. In addition, a single layer or a stacked film selected from tungsten nitride, molybdenum nitride, or titanium nitride is used as the conductive film 2336, and a single layer or a stacked film selected from tantalum, molybdenum, or titanium is used as the conductive film 2338. Can be used.

  Next, the conductive films 2336 and 2338 provided in a stacked manner are selectively removed by etching, so that the conductive films 2336 and 2338 are left in portions above the regions 2304 and 2306, respectively. 2342 are formed (see FIG. 24A).

  Next, a resist mask 2348 is selectively formed so as to cover the region 2304, and an impurity element is formed by introducing an impurity element into the region 2306 using the resist mask 2348 and the gate electrode 2342 as masks (FIG. 24B )reference). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus (P) is used as the impurity element.

  In FIG. 24B, an impurity region 2352 and a channel formation region 2350 which form a source region or a drain region are formed in the region 2306 by introducing an impurity element.

  Next, a resist mask 2366 is selectively formed so as to cover the region 2306, and an impurity region is formed by introducing an impurity element into the region 2304 using the resist mask 2366 and the gate electrode 2340 as masks (FIG. 24C )reference). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, an impurity element (eg, boron (B)) having a conductivity type different from that of the impurity element introduced into the region 2306 in FIG. 24C is introduced. As a result, an impurity region 2370 that forms a source region or a drain region and a channel formation region 2368 are formed in the region 2304.

  Next, a second insulating film 2372 is formed so as to cover the insulating films 2332 and 2334 and the gate electrodes 2340 and 2342, and impurity regions 2352 formed in regions 2304 and 2306 on the second insulating film 2372, respectively. A wiring 2374 which is electrically connected to 2370 is formed (see FIG. 25A).

  The second insulating film 2372 is formed by silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x) by CVD or sputtering. > Y> 0) and other insulating films having oxygen or nitrogen, films containing carbon such as DLC (diamond-like carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or siloxane resins It can be provided in a single layer or a laminated structure made of a siloxane material. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  The wiring 2374 is formed of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu) by CVD or sputtering. ), Gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or an alloy material or compound containing these elements as a main component The material is a single layer or a laminate. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. For the wiring 2374, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride film, and a barrier film may be employed. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are optimal materials for forming the wiring 2374 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

Note that the structure of the transistor constituting the transistor of the present invention is not limited to the illustrated structure. For example, a transistor structure such as an inverted stagger structure or a fin FET structure can be employed. The fin FET structure is preferable because the short channel effect accompanying the miniaturization of the transistor size can be suppressed.

The semiconductor device according to the present invention includes a battery. As the battery, it is preferable to use the thin film secondary battery shown in the above embodiment. Therefore, in this embodiment, connection with a thin film secondary battery in the transistor formed in this embodiment will be described.

In this embodiment, the thin film secondary battery is formed by being stacked over the wiring 2374 connected to the transistor. In the thin film secondary battery, a current collector thin film, a negative electrode active material layer, a solid electrolyte layer, a positive electrode active material layer, and a current collector thin film are sequentially stacked (FIG. 25B). Therefore, the material of the wiring 2374 that is also used as the current collector thin film of the thin film secondary battery is required to have good adhesion to the negative electrode active material and low resistance, and aluminum, copper, nickel, vanadium, and the like are particularly preferable. is there.

Next, the structure of the thin film secondary battery will be described in detail. A negative electrode active material layer 2391 is formed over the wiring 2374. In general, vanadium oxide (V 2 O 5 ) or the like is used. Next, a solid electrolyte layer 2392 is formed over the negative electrode active material layer 2391. In general, lithium phosphate (Li 3 PO 4 ) or the like is used. Next, a positive electrode active material layer 2393 is formed over the solid electrolyte layer 2392. Generally, lithium manganate (LiMn 2 O 4 ) or the like is used. Lithium cobaltate (LiCoO 2 ) or lithium nickelate (LiNiO 2 ) may be used. Next, a current collector thin film 2394 serving as an electrode is formed over the positive electrode active material layer 2393. The current collector thin film 2394 is required to have good adhesion to the positive electrode active material layer 2393 and low resistance, and aluminum, copper, nickel, vanadium, or the like can be used.

The thin film layers of the negative electrode active material layer 2391, the solid electrolyte layer 2392, the positive electrode active material layer 2393, and the current collector thin film 2394 may be formed by a sputtering technique or an evaporation technique. The thickness of each layer is preferably 0.1 μm to 3 μm.

Next, a resin is applied to form an interlayer film 2396. Then, the interlayer film 2396 is etched to form a contact hole. The interlayer film 2396 is not limited to a resin, and may be another film such as a CVD oxide film, but is preferably a resin from the viewpoint of flatness. Alternatively, a contact hole may be formed using a photosensitive resin without using etching. Next, a wiring layer 2395 is formed over the interlayer film 2396 and connected to the wiring 2397 to ensure electrical connection of the thin film secondary battery.

With the above structure, the semiconductor device of the present invention can have a structure in which a transistor is formed using a single crystal substrate and a thin film secondary battery is provided thereover. Therefore, in the semiconductor device of the present invention, it is possible to provide a semiconductor device having flexibility that achieves ultrathinning and miniaturization.

  Note that this embodiment can be freely combined with the above embodiment mode and other embodiments. That is, by periodically charging the battery, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention is characterized in that when charging a battery, the antenna circuit provided in the RFID receives power and charges the battery. For this reason, the battery can be charged by using the power of the radio wave or electromagnetic wave from the outside as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

In addition to the advantages provided by the battery, the semiconductor device of the present invention is provided with a switch circuit in a power supply circuit that supplies power to a signal control circuit that transmits / receives individual information to / from the outside. The power supply to the control circuit is controlled. By controlling the power supply to the signal control circuit in the switch circuit provided in the power supply circuit, the RFID operation can be performed intermittently. Therefore, it is possible to reduce power consumption in the battery and to operate for a long time without supplying power by a wireless signal.

  In this embodiment, an example of a manufacturing method when the semiconductor device of the present invention, which is different from that of Embodiment 3 described above, is used as an RFID will be described with reference to drawings. In this embodiment, a configuration in which a power supply circuit and a signal control circuit are provided over the same substrate will be described. Note that a transistor with less variation in transistor characteristics is formed by forming a power supply circuit and a signal control circuit over a substrate and using a transistor formed using a single crystal substrate as a transistor constituting the power supply circuit and the signal control circuit. This is preferable because an RFID can be configured. In this embodiment, an example in which the thin film secondary battery described in the above embodiment is used as the battery in the power supply circuit will be described.

  First, an insulating film is formed over the substrate 2600. Here, single crystal Si having n-type conductivity is used as the substrate 2600, and an insulating film 2602 and an insulating film 2604 are formed over the substrate 2600 (see FIG. 26A). For example, heat treatment is performed on the substrate 2600 to form silicon oxide (SiOx) as the insulating film 2602, and silicon nitride (SiNx) is formed over the insulating film 2602 by a CVD method.

  The substrate 2600 can be used without any particular limitation as long as it is a semiconductor substrate. For example, a single crystal Si substrate having an n-type or p-type conductivity, a compound semiconductor substrate (GaAs substrate, InP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by IMplanted) An SOI (Silicon on Insulator) substrate manufactured using an OXygen method or the like can be used.

  The insulating film 2604 may be provided by nitriding the insulating film 2602 by high-density plasma treatment after the insulating film 2602 is formed. Note that the insulating film provided over the substrate 2600 may be a single layer or a stacked structure including three or more layers.

  Next, a pattern of a resist mask 2606 is selectively formed over the insulating film 2604, and selective etching is performed using the resist mask 2606 as a mask, whereby a recess 2608 is selectively formed in the substrate 2600 (FIG. 26). (See (B)). Etching of the substrate 2600 and the insulating films 2602 and 2604 can be performed by dry etching using plasma.

  Next, after the pattern of the resist mask 2606 is removed, an insulating film 2610 is formed so as to fill the recess 2608 formed in the substrate 2600 (see FIG. 26C).

  The insulating film 2610 is formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x> y> 0), or the like using a CVD method, a sputtering method, or the like. It is formed using an insulating material. Here, as the insulating film 2610, a silicon oxide film is formed using TEOS (tetraethylorthosilicate) gas by an atmospheric pressure CVD method or a low pressure CVD method.

  Next, the surface of the substrate 2600 is exposed by performing a grinding process, a polishing process, or a CMP (Chemical Mechanical Polishing) process. Here, regions 2612 and 2613 are provided between the insulating films 2611 formed in the recesses 2608 of the substrate 2600 by exposing the surface of the substrate 2600. Note that the insulating film 2611 is obtained by removing the insulating film 2610 formed over the surface of the substrate 2600 by grinding treatment, polishing treatment, or CMP treatment. Subsequently, a p-well 2615 is formed in the region 2613 of the substrate 2600 by selectively introducing an impurity element having p-type conductivity (see FIG. 27A).

  As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, boron (B) is introduced into the region 2613 as the impurity element.

  Note that in this embodiment, since a semiconductor substrate having n-type conductivity is used as the substrate 2600, no impurity element is introduced into the region 2612; however, by introducing an impurity element exhibiting n-type conductivity An n-well may be formed in the region 2612. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used.

  On the other hand, when a semiconductor substrate having p-type conductivity is used, an n-type impurity element is introduced into the region 2612 to form an n-well, and no impurity element is introduced into the regions 2612 and 2613. It is good.

  Next, insulating films 2632 and 2634 are formed over the surfaces of the regions 2612 and 2613 of the substrate 2600, respectively (see FIG. 27B).

  For example, the insulating films 2632 and 2634 can be formed using silicon oxide films by oxidizing the surfaces of the regions 2612 and 2613 provided in the substrate 2600 by performing heat treatment. In addition, after a silicon oxide film is formed by a thermal oxidation method, the surface of the silicon oxide film is nitrided by performing nitriding treatment, so that a silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film) are stacked. You may form with a structure.

  In addition, as described above, the insulating films 2632 and 2634 may be formed by plasma treatment. For example, the surface of the regions 2612 and 2613 provided in the substrate 2600 is subjected to oxidation treatment or nitridation treatment by high-density plasma treatment, so that a silicon oxide (SiOx) film or a silicon nitride (SiNx) film is formed as the insulating films 2632 and 2634. Can be formed. Alternatively, after the surface of the regions 2612 and 2613 is oxidized by high-density plasma treatment, nitriding treatment may be performed by performing high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 2612 and 2613, a (silicon oxynitride film) is formed over the silicon oxide film, and the insulating films 2632 and 2634 are formed of a silicon oxide film and a silicon oxynitride film. Becomes a laminated film. Alternatively, after a silicon oxide film is formed on the surfaces of the regions 2612 and 2613 by a thermal oxidation method, oxidation treatment or nitridation treatment may be performed by high-density plasma treatment.

  Note that the insulating films 2632 and 2634 formed in the regions 2612 and 2613 of the substrate 2600 function as gate insulating films in transistors to be completed later.

  Next, a conductive film is formed so as to cover the insulating films 2632 and 2634 formed over the regions 2612 and 2613 provided in the substrate 2600 (see FIG. 27C). Here, an example is shown in which a conductive film 2636 and a conductive film 2638 are sequentially stacked as the conductive film. Needless to say, the conductive film may be formed of a single layer or a stacked structure of three or more layers.

  The conductive films 2636 and 2638 are selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), and the like. Or an alloy material or a compound material containing these elements as main components. Alternatively, a metal nitride film obtained by nitriding these elements can be used. In addition, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus can be used.

  Here, the conductive film 2636 is formed using tantalum nitride, and the conductive film 2638 is formed using tungsten in a stacked structure. In addition, a single layer or stacked film selected from tungsten nitride, molybdenum nitride, or titanium nitride is used as the conductive film 2636, and a single layer or stacked film selected from tantalum, molybdenum, or titanium is used as the conductive film 2638. Can be used.

  Next, the conductive films 2636 and 2638 provided in a stacked manner are selectively removed by etching, whereby the conductive films 2636 and 2638 are left in portions above the regions 2612 and 2613 of the substrate 2600, respectively. Conductive films 2640 and 2642 functioning as electrodes are formed (see FIG. 28A). Here, in the substrate 2600, the surfaces of the regions 2612 and 2613 that do not overlap with the conductive films 2640 and 2642 are exposed.

  Specifically, in the region 2612 of the substrate 2600, a portion of the insulating film 2632 formed below the conductive film 2640 that does not overlap with the conductive film 2640 is selectively removed, so that the edges of the conductive film 2640 and the insulating film 2632 are removed. The parts are formed so as to roughly match. Further, in a region 2613 of the substrate 2600, a portion of the insulating film 2634 formed below the conductive film 2642 that does not overlap with the conductive film 2642 is selectively removed, so that end portions of the conductive film 2642 and the insulating film 2634 are roughly formed. Form to match.

  In this case, an insulating film or the like which does not overlap with the formation of the conductive films 2640 and 2642 may be removed, or the resist mask remaining after the formation of the conductive films 2640 and 2642 or the conductive films 2640 and 2642 may be used as a mask. A portion of the insulating film that does not become necessary may be removed.

  Next, an impurity element is selectively introduced into the regions 2612 and 2613 of the substrate 2600 (see FIG. 28B). Here, a low-concentration impurity element imparting n-type conductivity is selectively introduced into the region 2650 using the conductive film 2642 as a mask, and a low-concentration impurity element imparting p-type conductivity is selected in the region 2648 using the conductive film 2640 as a mask. Introduced. As the impurity element imparting n-type conductivity, phosphorus (P), arsenic (As), or the like can be used. As the impurity element imparting p-type conductivity, boron (B), aluminum (Al), gallium (Ga), or the like can be used.

  Next, sidewalls 2654 that are in contact with the side surfaces of the conductive films 2640 and 2642 are formed. Specifically, an insulating film such as a film containing an inorganic material of silicon, silicon oxide, or silicon nitride, or a film containing an organic material such as an organic resin is formed by a plasma CVD method or a sputtering method. Alternatively, they are stacked. Then, the insulating film can be selectively etched by anisotropic etching mainly in the vertical direction so as to be in contact with the side surfaces of the conductive films 2640 and 2642. Note that the sidewall 2654 is used as a mask for doping when an LDD (Lightly Doped Drain) region is formed. Here, the sidewall 2654 is formed so as to be in contact with the insulating film formed below the conductive films 2640 and 2642 and the side surfaces of the conductive films 2640 and 2642.

  Subsequently, an impurity element functioning as a source region or a drain region is formed by introducing an impurity element into the regions 2612 and 2613 of the substrate 2600 using the sidewalls 2654 and the conductive films 2640 and 2642 as masks (FIG. 28C )reference). Here, an impurity element imparting high concentration n-type is introduced into the region 2613 of the substrate 2600 using the sidewall 2654 and the conductive film 2642 as a mask, and a high concentration p is applied to the region 2612 using the sidewall 2654 and the conductive film 2640 as a mask. Impurity elements that impart molds are introduced.

  As a result, an impurity region 2658 that forms a source region or a drain region, a low-concentration impurity region 2660 that forms an LDD region, and a channel formation region 2656 are formed in the region 2612 of the substrate 2600. In the region 2613 of the substrate 2600, an impurity region 2664 that forms a source region or a drain region, a low-concentration impurity region 2666 that forms an LDD region, and a channel formation region 2662 are formed.

  Note that in this embodiment, the impurity element is introduced in a state where the regions 2612 and 2613 of the substrate 2600 which do not overlap with the conductive films 2640 and 2642 are exposed. Accordingly, channel formation regions 2656 and 2662 formed in the regions 2612 and 2613 of the substrate 2600 can be formed in self-alignment with the conductive films 2640 and 2642, respectively.

  Next, a second insulating film 2677 is formed so as to cover insulating films, conductive films, and the like provided over the regions 2612 and 2613 of the substrate 2600, and an opening 2678 is formed in the insulating film 2677 (FIG. 29 (A)). A)).

  The second insulating film 2677 is formed by silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x) by a CVD method, a sputtering method, or the like. > Y> 0) and other insulating films having oxygen or nitrogen, films containing carbon such as DLC (diamond-like carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or siloxane resins It can be provided in a single layer or a laminated structure made of a siloxane material. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  Next, a conductive film 2680 is formed in the opening 2678 using a CVD method, and conductive films 2682a to 2682d are selectively formed over the insulating film 2677 so as to be electrically connected to the conductive film 2680 (FIG. 29). (See (B)).

  The conductive films 2680 and 2682a to 2682d are formed of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt) by CVD or sputtering. ), Copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or these elements as main components An alloy material or a compound material to be formed is a single layer or a laminated layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive films 2680 and 2682a to 2682d include, for example, a laminated structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, and a laminated structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride film, and a barrier film. Should be adopted. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon have low resistance and are inexpensive, and thus are optimal materials for forming the conductive films 2680 and 2682a to 2682d. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made. Here, the conductive films 2680 and 2682a to 2682d can be formed by selectively growing tungsten (W) by a CVD method.

  Through the above steps, a semiconductor device including a p-type transistor formed in the region 2612 of the substrate 2600 and an n-type transistor formed in the region 2613 can be obtained.

Note that the structure of the transistor constituting the transistor of the present invention is not limited to the illustrated structure. For example, a transistor structure such as an inverted stagger structure or a fin FET structure can be employed. The fin FET structure is preferable because the short channel effect accompanying the miniaturization of the transistor size can be suppressed.

The semiconductor device according to the present invention includes a battery. As the battery, it is preferable to use the thin film secondary battery shown in the above embodiment. Therefore, in this embodiment, connection with a thin film secondary battery in the transistor formed in this embodiment will be described.

In this embodiment, the thin film secondary battery is stacked over the conductive film 2682d connected to the transistor. In the thin film secondary battery, a current collector thin film, a negative electrode active material layer, a solid electrolyte layer, a positive electrode active material layer, and a current collector thin film are sequentially stacked (FIG. 29B). Therefore, the material of the conductive film 2682d used also as the current collector thin film of the thin film secondary battery is required to have good adhesion to the negative electrode active material and low resistance, and aluminum, copper, nickel, vanadium, and the like are particularly preferable. It is.

Next, the structure of the thin film secondary battery will be described in detail. A negative electrode active material layer 2691 is formed over the conductive film 2682d. In general, vanadium oxide (V 2 O 5 ) or the like is used. Next, a solid electrolyte layer 2692 is formed over the negative electrode active material layer 2691. In general, lithium phosphate (Li 3 PO 4 ) or the like is used. Next, a positive electrode active material layer 2693 is formed over the solid electrolyte layer 2692. Generally, lithium manganate (LiMn 2 O 4 ) or the like is used. Lithium cobaltate (LiCoO 2 ) or lithium nickelate (LiNiO 2 ) may be used. Next, a current collector thin film 2694 serving as an electrode is formed over the positive electrode active material layer 2693. The current collector thin film 2694 is required to have good adhesion to the positive electrode active material layer 2693 and low resistance, and aluminum, copper, nickel, vanadium, or the like can be used.

The thin film layers of the negative electrode active material layer 2691, the solid electrolyte layer 2692, the positive electrode active material layer 2693, and the current collector thin film 2694 may be formed by a sputtering technique or an evaporation technique. The thickness of each layer is preferably 0.1 μm to 3 μm.

Next, resin is applied to form an interlayer film 2696. Then, the interlayer film 2696 is etched to form contact holes. The interlayer film 2696 is not limited to resin, and may be another film such as a CVD oxide film, but is preferably a resin from the viewpoint of flatness. Alternatively, a contact hole may be formed using a photosensitive resin without using etching. Next, a wiring layer 2695 is formed over the interlayer film 2696 and connected to the wiring 2697, so that electrical connection of the thin film secondary battery is ensured.

With the above structure, the semiconductor device of the present invention can have a structure in which a transistor is formed using a single crystal substrate and a thin film secondary battery is provided thereover. Therefore, in the semiconductor device of the present invention, it is possible to provide a semiconductor device having flexibility that achieves ultrathinning and miniaturization.

  Note that this embodiment can be freely combined with the above embodiment mode and other embodiments. That is, by periodically charging the battery, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention is characterized in that when charging a battery, the antenna circuit provided in the RFID receives power and charges the battery. For this reason, the battery can be charged by using the power of the radio wave or electromagnetic wave from the outside as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

In addition to the advantages provided by the battery, the semiconductor device of the present invention is provided with a switch circuit in a power supply circuit that supplies power to a signal control circuit that transmits / receives individual information to / from the outside. The power supply to the control circuit is controlled. By controlling the power supply to the signal control circuit in the switch circuit provided in the power supply circuit, the RFID operation can be performed intermittently. Therefore, it is possible to reduce power consumption in the battery and to operate for a long time without supplying power by a wireless signal.

In this embodiment, a charge management circuit for performing charge management of a battery of a power supply circuit in the semiconductor device of the present invention described in the above embodiment modes and embodiments will be described. In the present invention, when a secondary battery is used as a battery, it is generally necessary to manage charge and discharge. In order to prevent overcharging when charging, it is necessary to charge while monitoring the charging status. In the secondary battery used in the present invention, a dedicated circuit is required for charge management. FIG. 33 is a block diagram of a charge management circuit for performing charge management.

The charge management circuit shown in FIG. 33 includes a constant current source 7401, a switch circuit 7402, a charge amount control circuit 7403, and a secondary battery 7404. Note that the constant current source 7401, the switch circuit 7402, the charge amount control circuit 7403, and the secondary battery 7404 in the configuration shown in FIG. 33 generally correspond to the battery 114 of FIG. 1 described in Embodiment 1. That is, the constant current source 7401 in the battery 114 is input with signals from the rectifier circuit 113 in FIG. 1 and the control circuit 1001 in FIG.

The charge management circuit described here is an example, and the present invention is not limited to this configuration, and may have other configurations. In this embodiment, the secondary battery is charged with a constant current, but it may be switched to constant voltage charging in the middle instead of charging only with a constant current. Another method that does not use a constant current may be used. In addition, a transistor included in the circuit in the block diagram of FIG. 33 described below may be a thin film transistor, a transistor using a single crystal substrate, or an organic transistor.

FIG. 34 shows the details of the block diagram shown in FIG. The operation will be described below.

34, the constant current source 7401, the switch circuit 7402, and the charge amount control circuit 7403 use the high potential power line 7526 and the low potential power line 7527 as power lines. In FIG. 34, the low potential power line 7527 is used as the GND line. Note that the potential is not limited to the GND line and may be another potential.

The constant current source 7401 includes transistors 7502 to 7511, a resistor 7501, and a resistor 7512. Current flows from the high potential power line 7526 to the transistors 7502 and 7503 through the resistor 7501, so that the transistors 7502 and 7503 are turned on.

The transistor 7504, the transistor 7505, the transistor 7506, the transistor 7507, and the transistor 7508 constitute a feedback differential amplifier circuit, and the gate potential of the transistor 7507 is almost the same as the gate potential of the transistor 7502. The drain current of the transistor 7511 has a value obtained by dividing the potential difference between the gate potential of the transistor 7507 and the low potential power supply line 7527 by the resistance value of the resistor 7512. The current is input to a current mirror circuit including transistors 7509 and 7510, and an output current of the current mirror circuit is supplied to the switch circuit 7402. The constant current source 7401 is not limited to this configuration, and other configurations may be used.

  The switch circuit 7402 includes a transmission gate 7515, an inverter 7513, and an inverter 7514, and controls whether or not the current of the constant current source 7401 is supplied to the secondary battery 7404 according to an input signal of the inverter 7514. The switch circuit is not limited to this configuration, and other configurations may be used.

  The charge amount control circuit 7403 includes transistors 7516 to 7524 and a resistor 7525. A current flows from the high potential power line 7526 to the transistors 7523 and 7524 through the resistor 7525, so that the transistors 7523 and 7524 are turned on. The transistors 7518, 7519, 7520, 7521, and 7522 form a differential comparator. When the gate potential of the transistor 7520 is lower than the gate potential of the transistor 7521, the drain potential of the transistor 7518 is substantially equal to the potential of the high potential power supply line 7526, and when the gate potential of the transistor 7520 is higher than the gate potential of the transistor 7521, The drain potential of 7518 is substantially equal to the source potential of the transistor 7520.

When the drain potential of the transistor 7518 is substantially equal to the high potential power supply line, the charge amount control circuit outputs low through a buffer including the transistors 7517 and 7516.

When the drain potential of the transistor 7518 is substantially equal to the source potential of the transistor 7520, the charge amount control circuit outputs high through a buffer including the transistors 7517 and 7516.

When the output of the charge amount control circuit 7403 is low, a current is supplied to the secondary battery through the switch circuit 7402. When the output of the charge amount control circuit 7403 is high, the switch circuit 7402 is turned off and no current is supplied to the secondary battery.

Since the gate of the transistor 7520 is connected to the secondary battery 7404, charging is stopped when the secondary battery is charged and its potential exceeds the threshold value of the comparator of the charge amount control circuit 7403. In this embodiment, the threshold value of the comparator is set by the gate potential of the transistor 7523, but is not limited to this value, and may be another potential. In general, the set potential is appropriately determined depending on the use of the charge amount control circuit 7403 and the performance of the secondary battery.

In the present embodiment, the charging circuit for the secondary battery as described above is configured, but the present invention is not limited to this configuration.

With the above structure, a function for managing charging of a battery in a power supply circuit in the semiconductor device can be added to the semiconductor device of the present invention. Therefore, in the semiconductor device of the present invention, it is possible to provide a semiconductor device that can prevent problems such as overcharging of a battery in a power supply circuit in the semiconductor device.

  Note that this embodiment can be freely combined with the above embodiment mode and other embodiments. That is, by periodically charging the battery, it is possible to prevent a shortage of power for transmitting / receiving individual information associated with deterioration of the battery over time, as in the past. The semiconductor device of the present invention is characterized in that when charging a battery, the antenna circuit provided in the RFID receives power and charges the battery. For this reason, the battery can be charged by using the power of the radio wave or electromagnetic wave from the outside as a power source for driving the RFID without being directly connected to the charger. As a result, it is possible to continue using the battery without confirming the remaining capacity of the battery or exchanging the battery, such as active type RFID. In addition, by always holding the power for driving the RFID in the battery, sufficient power for operating the RFID can be obtained, and the communication distance with the reader / writer can be extended.

In addition to the advantages provided by the battery, the semiconductor device of the present invention is provided with a switch circuit in a power supply circuit that supplies power to a signal control circuit that transmits / receives individual information to / from the outside. The power supply to the control circuit is controlled. By controlling the power supply to the signal control circuit in the switch circuit provided in the power supply circuit, the RFID operation can be performed intermittently. Therefore, it is possible to reduce power consumption in the battery and to operate for a long time without supplying power by a wireless signal.

  In this embodiment, an application of a semiconductor device (hereinafter referred to as RFID) that performs data communication by wireless communication according to the present invention will be described. The semiconductor device of the present invention includes, for example, banknotes, coins, securities, bearer bonds, certificate documents (driver's license, resident's card, etc.), packaging containers (wrapping paper, bottles, etc.), recording media (DVD software) And video tapes), vehicles (bicycles, etc.), personal items (such as bags and glasses), foods, plants, animals, human bodies, clothing, daily necessities, electronic equipment, etc. and luggage tags It can be used as a so-called IC label, IC tag, or IC card provided on an article. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), mobile phones, and the like.

  Note that in this specification, an IC card is a card in which information is recorded by embedding a sliced semiconductor integrated circuit (IC chip) in a plastic card. It is divided into “contact type” and “non-contact type” depending on the method of reading and writing data. The non-contact card has a built-in antenna and can communicate with the terminal using weak radio waves. An IC tag is a tag in which information such as its own identification code is recorded on a minute IC chip used for identifying an object, and has the ability to transmit and receive information to and from a management system using radio waves. With a size of several tens of millimeters, it can communicate with a reader using radio waves or electromagnetic waves. There are various types of IC tags used for RFID that performs data communication by wireless communication of the present invention, and there are card-type, labels (referred to as IC labels), certificates, and the like.

  In this embodiment, with reference to FIG. 30, an application example of the present invention and an example of a product with them will be described.

  FIG. 30A illustrates an example of a state of a finished product of a semiconductor device having an RFID according to the present invention. A plurality of IC labels 3003 incorporating RFID 3002 are formed on a label mount 3001 (separate paper). The IC label 3003 is stored in the box 3004. In addition, on the IC label 3003, information (product name, brand, trademark, trademark owner, seller, manufacturer, etc.) regarding the product or service is recorded, while the built-in RFID includes An ID number unique to the product (or product type) is attached, and it is possible to easily grasp illegal activities such as forgery, infringement of intellectual property rights such as trademark rights and patent rights, and unfair competition. In addition, in the RFID, a great deal of information that cannot be clearly stated on the container or label of the product, for example, the product's production area, sales place, quality, raw materials, efficacy, use, quantity, shape, price, production method, usage method, Production time, use time, expiration date, handling instructions, intellectual property information related to products, etc. can be input, and a trader and a consumer can access such information with a simple reader. In addition, rewriting and erasing can be easily performed from the producer side, but rewriting and erasing etc. are not possible from the trader and the consumer side.

  FIG. 30B illustrates a label-like IC tag 3011 in which an RFID 3012 is incorporated. By providing the IC tag 3011 in the product, product management becomes easy. For example, when a product is stolen, the culprit can be quickly grasped by following the route of the product. As described above, by providing the IC tag, it is possible to distribute a product excellent in so-called traceability. Moreover, in this invention, the structure which comprises a thin film secondary battery as a battery can be taken. Therefore, as shown in FIG. 30B, the present invention is also useful when sticking to an article having a curved shape.

  FIG. 30C shows an example of a state of a completed product of the IC card 3021 including the RFID 3022 according to the present invention. The IC card 3021 includes all cards such as a cash card, a credit card, a prepaid card, an electronic ticket, electronic money, a telephone card, and a membership card.

Note that the IC card shown in FIG. 30C can have a structure including a thin film secondary battery as a battery in the present invention. Therefore, the present invention is very useful because it can be used even if it is deformed into a bent shape as shown in FIG.

  FIG. 30E shows a state of a completed product of the bearer bond 3031. An RFID 3032 is embedded in the bearer bond 3031 and the periphery thereof is molded with resin to protect the RFID. Here, the resin is filled with a filler. The bearer bond 3031 can be created in the same manner as the IC label, IC tag, and IC card according to the present invention. The bearer bonds include stamps, tickets, tickets, admission tickets, gift certificates, book coupons, stationery tickets, beer tickets, gift tickets, various gift certificates, various service tickets, etc. Is not to be done. Further, by providing the RFID 3032 of the present invention to bills, coins, securities, bearer bonds, certificates, etc., an authentication function can be provided, and forgery can be prevented by utilizing this authentication function. .

Although not shown here, the efficiency of a system such as an inspection system can be improved by providing the RFID of the present invention in books, packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc. Can be achieved. In addition, forgery and theft can be prevented by providing RFID for vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding RFID in a living creature such as livestock, it becomes possible to easily identify the year of birth, sex, type, or the like.

  As described above, the RFID of the present invention can be provided and used for any article (including living creatures).

  This embodiment can be freely combined with the above embodiment mode and other embodiments.

FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 3 illustrates a structure of Embodiment 1; FIG. 6 illustrates a structure of Embodiment 2; FIG. 6 illustrates a structure of Embodiment 2; FIG. 6 illustrates a structure of Embodiment 2; FIG. 6 illustrates a structure of Embodiment 2; FIG. 6 illustrates a structure of Embodiment 2; FIG. 10 illustrates a structure of Embodiment 3; FIG. 10 illustrates a structure of Embodiment 3; FIG. 3 is a diagram illustrating a configuration of Embodiment 1. FIG. 6 is a diagram illustrating a configuration of a second embodiment. FIG. 6 is a diagram illustrating a configuration of a second embodiment. FIG. 6 is a diagram illustrating a configuration of a second embodiment. FIG. 6 is a diagram illustrating a configuration of a second embodiment. FIG. 6 is a diagram illustrating a configuration of a second embodiment. FIG. 6 is a diagram illustrating a configuration of a third embodiment. FIG. 6 is a diagram illustrating a configuration of a third embodiment. FIG. 6 is a diagram illustrating a configuration of a third embodiment. FIG. 6 is a diagram illustrating a configuration of a fourth embodiment. FIG. 6 is a diagram illustrating a configuration of a fourth embodiment. FIG. 6 is a diagram illustrating a configuration of a fourth embodiment. FIG. 6 is a diagram illustrating a configuration of a fourth embodiment. FIG. 10 is a diagram illustrating a configuration of Example 6. The figure which shows the conventional structure. The figure which shows the conventional structure. FIG. 10 is a diagram illustrating a configuration of a fifth embodiment. FIG. 10 is a diagram illustrating a configuration of a fifth embodiment.

Explanation of symbols

101 RFID
102 antenna circuit 103 power supply circuit 104 signal control circuit 105 amplifying circuit 106 demodulating circuit 107 logic circuit 108 memory control circuit 109 memory circuit 110 logic circuit 111 amplifying circuit 112 modulating circuit 113 rectifying circuit 114 battery 115 low frequency signal generating circuit 116 switch circuit 117 Power supply circuit 201 Reader / writer 301 First antenna circuit 302 Second antenna circuit 303 Charger 332 Chip 333 Antenna 401 Antenna 402 Resonant capacitor 403 Antenna circuit 404 Diode 405 Diode 406 Smoothing capacitor 407 Rectifier circuit 820 Ring oscillator 821 Frequency division Circuit 822 AND circuit 823 inverter 824 inverter 825 transmission gate 1000 resistor 1001 control circuit 1004 resistor 101 Resistor 1002 Transistor 1003 Transistor 1005 Transistor 1006 Transistor 1007 Transistor 1008 Transistor 1009 Transistor 1301 Substrate 1302 Insulating film 1303 Release layer 1304 Insulating film 1305 Semiconductor film 1306 Gate insulating film 1307 Gate electrode 1308 Impurity region 1309 Impurity region 1310 Insulating film 1311 Impurity region 1313 Conduction Film 1314 Insulating film 1316 Conductive film 1317 Conductive film 1318 Insulating film 1319 Element forming layer 1320 First sheet material 1321 Second sheet material 1337 Resin 1338 Conductive particles 1381 Negative electrode active material layer 1382 Solid electrolyte layer 1383 Positive electrode active material layer 1384 Current collector thin film 1385 Interlayer film 1386 Wiring layer 1389 Thin film secondary battery 1391 Voltage comparison circuit 1392 H 1393 switch 1394 rectifier element 1395 rectifier element 1401 resistor element 1402 resistor element 1403 resistor element 1404 resistor element 1405 comparator 1406 buffer circuit 1407 buffer circuit 1501 booster antenna 2300 substrate 2302 insulating film 2304 region 2306 region 2307 p-well 2332 insulating film 2336 conductive Film 2338 conductive film 2340 gate electrode 2342 gate electrode 2348 resist mask 2350 channel formation region 2352 impurity region 2366 resist mask 2368 channel formation region 2370 impurity region 2372 insulating film 2374 wiring 2391 negative electrode active material layer 2392 solid electrolyte layer 2393 positive electrode active material layer 2394 Current collector thin film 2395 Wiring layer 2396 Interlayer film 2397 Wiring 2600 Substrate 2602 Edge film 2604 Insulating film 2606 Resist mask 2608 Recessed film 2610 Insulating film 2611 Insulating film 2612 Region 2613 Region 2614 Region 2615 P well 2632 Insulating film 2634 Insulating film 2636 Conductive film 2638 Conductive film 2640 Conductive film 2642 Conductive film 2648 Area 2650 Area 2654 Side wall 2656 Channel formation region 2658 Impurity region 2660 Low concentration impurity region 2662 Channel formation region 2664 Impurity region 2666 Low concentration impurity region 2677 Insulating film 2678 Opening 2680 Conductive film 2691 Negative electrode active material layer 2692 Solid electrolyte layer 2693 Positive electrode active material layer 2694 Current collector Thin body film 2695 Wiring layer 2696 Interlayer film 2697 Wiring 3001 Label mount 3002 RFID
3003 IC label 3004 Box 3011 IC tag 3012 RFID
3021 IC card 3022 RFID
3031 bearer bond 3032 RFID
3100 RFID
3101 Antenna circuit 3102 Signal control circuit 3103 Battery 3104 Power supply circuit 3105 Demodulation circuit 3106 Amplification circuit 3107 Logic circuit 3108 Memory control circuit 3109 Memory circuit 3110 Logic circuit 3111 Amplification circuit 3112 Modulation circuit 3200 RFID
3201 Antenna circuit 3202 Signal control circuit 3203 Rectifier circuit 3204 Power circuit 3205 Demodulator circuit 3206 Amplifier circuit 3207 Logic circuit 3208 Memory control circuit 3209 Memory circuit 3210 Logic circuit 3211 Amplifier circuit 3212 Modulator circuit 7101 Substrate 7102 Current collector thin film 7103 Negative electrode active material layer 7104 Solid electrolyte layer 7105 Positive electrode active material layer 7106 Current collector thin film 7401 Constant current source 7402 Switch circuit 7403 Charge amount control circuit 7404 Secondary battery 7501 Resistor 7502 Transistor 7504 Transistor 7505 Transistor 7506 Transistor 7507 Transistor 7508 Transistor 7509 Transistor 7511 Transistor 7512 Resistor 7513 Inverter 7514 Inverter 7515 Transmission Gate 7516 Transistor 7517 Transistor 7518 Transistor 7518 Transistor 7520 Transistor 7521 Transistor 7523 Transistor 7525 Resistor 7526 High potential power line 7527 Low potential power line 1300a Thin film transistor 1300b Thin film transistor 1300c Thin film transistor 1300d Thin film transistor 1300e Thin film transistor 1300f Thin film transistor 1305a Semiconductor film 1305c Semiconductor film 1305d Semiconductor film 1305d Semiconductor film 1305d Semiconductor film 1305f semiconductor film 1307a conductive film 1307b conductive film 1312a insulating film 1312b insulating film 1315a conductive film 1315b conductive film 1331a conductive film 1331b conductive film 1332a opening 1332b opening 1334a conductive film 1334b conductive film 1336a Conductive film 1336b conductive film 2682a conductive film 2682b conductive film 2682c conductive film 2682d conductive film

Claims (9)

  1. An antenna circuit, a power supply circuit, a signal control circuit, and a booster antenna;
    The power supply circuit includes a rectifier circuit that rectifies a signal from the antenna circuit, a control circuit, a battery that is charged by the rectified signal, a switch circuit, a low-frequency signal generation circuit, and a power supply circuit Have
    The antenna circuit receives an external signal via a booster antenna,
    The control circuit includes:
    A circuit that compares the power from the rectifier circuit with the power from the battery and selects the power to be supplied to the switch circuit;
    When the power from the rectifier circuit is smaller than the power from the battery, the battery and the switch circuit are connected, and when the power from the battery is smaller than the power from the rectifier circuit, the battery and the switch It is a circuit that does not connect the circuit,
    The low-frequency signal generating circuit is a circuit that generates an output signal having a duty ratio of 1: n (1 is a high signal, n is a low signal, and n is an integer),
    The switch circuit is
    When the output signal is a high signal, the power supplied by the control circuit is supplied to the power supply circuit,
    When the output signal is a low signal, the power supplied by the control circuit is a circuit that does not supply the power supply circuit,
    The power supply circuit has a circuit for generating a reference voltage,
    The power supply circuit to which the power is supplied by the switch circuit outputs the same potential as the reference voltage to the signal control circuit in a period corresponding to the duty ratio .
  2. 2. The semiconductor device according to claim 1, wherein the battery is a lithium battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, or a capacitor.
  3. 2. The battery according to claim 1, wherein the battery includes a negative electrode active material layer, a solid electrolyte layer on the negative electrode active material layer, a positive electrode active material layer on the solid electrolyte layer, and a current collector thin film on the positive electrode active material layer. And a semiconductor device.
  4. 4. The antenna circuit according to claim 1, wherein the antenna circuit transmits / receives a signal input / output to / from the signal control circuit with a first antenna circuit for receiving a signal for charging the battery. 5. A semiconductor device comprising the second antenna circuit.
  5. 5. The semiconductor device according to claim 4, wherein the first antenna circuit includes a plurality of antenna circuits.
  6. 6. The semiconductor device according to claim 4, wherein one of the first antenna circuit and the second antenna circuit receives a signal by an electromagnetic induction method.
  7. 7. The semiconductor according to claim 1, wherein the low-frequency signal generation circuit is a circuit that generates a signal to be output to the switch circuit by dividing a generated clock signal. apparatus.
  8. 8. The semiconductor device according to claim 1, wherein the signal control circuit includes an amplifier circuit, a modulation circuit, a demodulation circuit, a logic circuit, and a memory control circuit.
  9. An IC label, an IC tag, or an IC card comprising the semiconductor device according to any one of claims 1 to 8.
JP2007138891A 2006-05-31 2007-05-25 Semiconductor device and IC label, IC tag, and IC card including the semiconductor device Expired - Fee Related JP5192732B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006152831 2006-05-31
JP2006152831 2006-05-31
JP2007138891A JP5192732B2 (en) 2006-05-31 2007-05-25 Semiconductor device and IC label, IC tag, and IC card including the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007138891A JP5192732B2 (en) 2006-05-31 2007-05-25 Semiconductor device and IC label, IC tag, and IC card including the semiconductor device

Publications (3)

Publication Number Publication Date
JP2008009972A JP2008009972A (en) 2008-01-17
JP2008009972A5 JP2008009972A5 (en) 2010-06-24
JP5192732B2 true JP5192732B2 (en) 2013-05-08

Family

ID=39068067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007138891A Expired - Fee Related JP5192732B2 (en) 2006-05-31 2007-05-25 Semiconductor device and IC label, IC tag, and IC card including the semiconductor device

Country Status (1)

Country Link
JP (1) JP5192732B2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009205669A (en) * 2008-01-31 2009-09-10 Semiconductor Energy Lab Co Ltd Semiconductor device
JP5181759B2 (en) 2008-03-21 2013-04-10 ソニー株式会社 IC card
WO2010035848A1 (en) 2008-09-23 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101770981B1 (en) 2009-10-30 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
JP2011188733A (en) * 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd Moving object, and system and method for wireless power feeding
JP2011165997A (en) * 2010-02-12 2011-08-25 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor device
JP5899994B2 (en) * 2012-02-10 2016-04-06 ソニー株式会社 Power feeding device, power receiving device, and program
US9285848B2 (en) * 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
JP6213559B2 (en) * 2013-03-18 2017-10-18 富士通株式会社 Electronic device, manufacturing method thereof, and network system
US10290908B2 (en) 2014-02-14 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6248779B2 (en) * 2014-04-18 2017-12-20 富士通セミコンダクター株式会社 Power supply switching circuit, semiconductor integrated circuit, wireless device, wireless system, and power supply switching method
JP6384193B2 (en) * 2014-08-18 2018-09-05 株式会社ソシオネクスト Wireless tag, wireless communication circuit, and degradation detection method
KR101756685B1 (en) * 2015-01-09 2017-07-12 한국산업기술대학교산학협력단 Apparatus for both Signal Amplification and Charging and System thereof

Also Published As

Publication number Publication date
JP2008009972A (en) 2008-01-17

Similar Documents

Publication Publication Date Title
KR101217109B1 (en) Id label, id tag, and id card
CN100454520C (en) Method for manufacturing film integrated circuit and element substrate
US7932589B2 (en) Semiconductor device and method for manufacturing the same
US20080024091A1 (en) Power storage device
US20070216593A1 (en) Energy source communication employing slot antenna
US20070216348A1 (en) Electric power supply system and electric power supply system for motor vehicle
AU2003236523B2 (en) Radio frequency identification tag with thin-film battery for antenna
US8049669B2 (en) Semiconductor device comprising circuit between first and second conducting wires
US7465647B2 (en) Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
CN101192704B (en) Antenna and semiconductor device having the same
CN1893003B (en) Manufacturing method of wiring board and semiconductor device
TWI431848B (en) Semiconductor device
KR101113010B1 (en) Semiconductor device
US8977203B2 (en) Semiconductor device
CN101136556B (en) Electricity storage device and semiconductor device having the same
JP2007013120A (en) Semiconductor device
CN101154823B (en) Wireless power storage device, semiconductor device including the wireless power storage device, and method for operating the same
JP5514429B2 (en) Semiconductor device
CN1894803B (en) Semiconductor apparatus and method for manufacturing the same
JP2019066486A (en) Device
CN1910600A (en) ID label, ID card, and ID tag
CN101202472B (en) Rectifier circuit, power supply circuit, and semiconductor device
KR20070001093A (en) Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US8344888B2 (en) Semiconductor device
US7635014B2 (en) Method for pressure bonding and method for manufacturing semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100511

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100511

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120612

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120719

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20120720

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20120820

TRDD Decision of grant or rejection written
A072 Dismissal of procedure

Free format text: JAPANESE INTERMEDIATE CODE: A073

Effective date: 20130108

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130122

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130201

R150 Certificate of patent or registration of utility model

Ref document number: 5192732

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160208

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160208

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees