JP5189658B2 - 粉末を精密に計量する気化装置 - Google Patents
粉末を精密に計量する気化装置 Download PDFInfo
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- JP5189658B2 JP5189658B2 JP2010542208A JP2010542208A JP5189658B2 JP 5189658 B2 JP5189658 B2 JP 5189658B2 JP 2010542208 A JP2010542208 A JP 2010542208A JP 2010542208 A JP2010542208 A JP 2010542208A JP 5189658 B2 JP5189658 B2 JP 5189658B2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 150000004882 thiopyrans Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Description
(a)計量装置であって、
(i)微粒子材料を収容するための貯留室と、
(ii)内部容積空間を有し、貯留室からの微粒子材料を収容するための第1の開口部と、微粒子材料を吐出するための第2の開口部とを有するハウジングと、
(iii)内部容積空間内に配置される回転式シャフトであって、該シャフトは滑らかな表面と、貯留室からの微粒子材料を収容するための第1の開口部、及び微粒子材料を吐出するための第2の開口部と位置合わせされる外周溝とを有する、シャフトと、
(iv)微粒子材料が外周溝によって実質的に輸送され、回転式シャフトの残りの部分に沿って輸送されないように協動する、回転式シャフト及び内部容積空間と、
(v)第2の開口部との関連で配置され、その端部おいて、回転式シャフト内の溝と実質的に同じ断面を有するスクレーパであって、該スクレーパは、溝と協動して、該溝の中に保持される微粒子材料を取り除き、シャフトが回転するのに応じて、計量された量の微粒子材料を第2の開口部を通じて送達する、スクレーパとを備える、計量装置と、
(b)計量された材料を受け取り、気化するフラッシュ蒸発器とを備える、微粒子材料を気化するための装置によって達成される。
Gはアリーレン、シクロアルキレン又はアルキレン基のような、炭素−炭素結合の結合基である。
R3及びR4はそれぞれ個別にアリール基を表し、それはさらに、構造式Cによって示されるような、ジアリール置換アミノ基で置換される。
nは1〜4の整数であり、
Ar、R7、R8及びR9は個別に選択されるアリール基である。
nは1〜3の整数であり、
Zは、現れる度に個別に、少なくとも2つの縮合芳香環を有する核を完成する原子を表す。
7 滑らかな胴部
8 オーガ構造
9 ねじ山がない部分
10 気化デバイス
11 蒸発源
12 蒸発源
13 蒸発源
14 蒸気柱
15 基板
100 気化装置
120a フラッシュ蒸発器
120b フラッシュ蒸発器
120c フラッシュ蒸発器
125 楔形の入口
130a 貯留室
130b 貯留室
130c 貯留室
135 楔形の入口
140 ハウジング
145 可撓性壁部
150 内部容積空間
155 第1の開口部
160 第2の開口部
170 回転式シャフト
175 外周溝
180 モータ
185 スクレーパ
190a アジテータ
190b アジテータ
190c アジテータ
195 回転式シャフト
200 気化装置
205 ハウジング
210 蒸発器筐体
215 内部容積空間
220 断熱材
225 回転式シャフト
230 圧力センサ
235 蒸発器筐体
240 内部容積空間
250 マニホールド
260 スクレーパエッジ
270 空洞
275 ロードロック
280 堆積チャンバ
285 OLED基板
295 並進/支持装置
300 真空源
310 OLEDデバイス
320 基板
330 アノード
335 正孔注入層
340 正孔輸送層
350 発光層
355 電子輸送層
360 電子注入層
370 有機物層
390 カソード
Claims (19)
- 微粒子材料を気化するための装置であって、
(a)計量装置であって、
(i)微粒子材料を収容するための貯留室と、
(ii)内部容積空間を有し、前記貯留室からの前記微粒子材料を収容するための第1の開口部と、前記微粒子材料を吐出するための第2の開口部とを有するハウジングと、
(iii)前記内部容積空間内に配置される回転式シャフトであって、該シャフトは滑らかな表面と、前記貯留室からの前記微粒子材料を収容するための前記第1の開口部、及び前記微粒子材料を吐出するための前記第2の開口部と位置合わせされる外周溝とを有する、シャフトと、
(iv)前記微粒子材料が前記外周溝によって実質的に輸送され、前記回転式シャフトの残りの部分に沿って輸送されないように協動する、前記回転式シャフト及び前記内部容積空間と、
(v)前記第2の開口部との関連で配置され、その端部おいて、前記回転式シャフト内の前記溝と実質的に同じ断面を有し、前記溝と協動して、該溝の中に保持される微粒子材料を取り除き、前記シャフトが回転するのに応じて、計量された量の微粒子材料を前記第2の開口部を通じて送達する、スクレーパと
を包含する、計量装置と、
(b)前記計量された材料を受け取り、気化するフラッシュ蒸発器と
を備える、微粒子材料を気化するための装置。 - 前記溝内に前記微粒子材料を満たし、圧縮するために前記貯留室内に配置されるデバイスをさらに備える、請求項1に記載の装置。
- 前記装置は、前記貯留室内の前記微粒子材料を流動化し、前記微粒子材料を前記第1の開口部において溝の中に押し込むアジテータを備える、請求項2に記載の装置。
- 前記スクレーパは加熱される、請求項1に記載の装置。
- 前記貯留室及び前記ハウジングは能動的に冷却される、請求項1に記載の装置。
- 単一の溝しか存在しない、請求項1に記載の装置。
- 可撓性壁部をさらに備え、前記可撓性壁部は前記内部容積空間の周囲の少なくとも一部を提供する、請求項1に記載の装置。
- 前記溝の幅は0.01mm〜2mmの範囲にある、請求項1に記載の装置。
- 前記溝の深さは0.01mm〜5mmである、請求項1に記載の装置。
- 複数の微粒子材料を気化するための装置であって、
(a)2つの別個の計量装置であって、該計量装置はそれぞれ、
(i)微粒子材料を収容するための貯留室と、
(ii)内部容積空間を有し、前記貯留室からの前記微粒子材料を収容するための第1の開口部と、前記微粒子材料を吐出するための第2の開口部とを有するハウジングと、
(iii)前記内部容積空間内に配置される回転式シャフトであって、該シャフトは滑らかな表面と、前記貯留室からの前記微粒子材料を収容するための前記第1の開口部、及び前記微粒子材料を吐出するための前記第2の開口部と位置合わせされる外周溝とを有する、シャフトと、
(iv)前記微粒子材料が前記外周溝によって実質的に輸送され、前記回転式シャフトの残りの部分に沿って輸送されないように協動する、前記回転式シャフト及び前記内部容積空間と、
(v)前記第2の開口部との関連で配置され、その端部おいて、前記回転式シャフト内の前記溝と実質的に同じ断面を有し、前記溝と協動して、該溝の中に保持される微粒子材料を取り除き、前記シャフトが回転するのに応じて、計量された量の微粒子材料を前記第2の開口部を通じて送達する、スクレーパと
を包含する、2つの別々の計量装置と、
(b)各前記計量装置から前記計量された材料を受け取り、気化するフラッシュ蒸発器手段と
を備える、複数の微粒子材料を気化するための装置。 - 前記回転式シャフトは各前記計量装置に共通である、請求項10に記載の装置。
- 前記フラッシュ蒸発器手段は、前記2つの計量装置からの前記計量された微粒子材料をそれぞれ受け取り、気化する2つの別個のフラッシュ蒸発器を含む、請求項10に記載の装置。
- 前記2つの計量装置内の前記溝は異なる容積を有する、請求項10に記載の装置。
- 前記2つの計量装置内の前記シャフトは異なる速度で回転する、請求項10に記載の装置。
- 各前記計量装置は、可撓性壁部をさらに備え、該可撓性壁部は、前記内部容積空間の周囲の少なくとも一部を提供する、請求項10に記載の装置。
- 前記溝の幅は0.01mm〜2mmの範囲にある、請求項10に記載の装置。
- 前記溝の深さは0.01mm〜5mmである、請求項10に記載の装置。
- 微粒子材料を気化するための方法であって、
(a)貯留室内に微粒子材料を収容すること、
(b)ハウジング内に内部容積空間を形成し、そのようなハウジング内に、前記貯留室からの前記微粒子材料を収容するための第1の開口部、及び前記微粒子材料を吐出するための第2の開口部を形成すること、
(c)前記内部容積空間内に配置されるシャフトであって、滑らかな表面と、前記貯留室からの微粒子材料を収容するための前記第1の開口部、及び前記微粒子材料を吐出するための前記第2の開口部と位置合わせされる外周溝とを有する、シャフトを回転させると共に、該シャフトと前記ハウジングとの間に、前記微粒子材料の平均粒径よりも小さい間隙を設けることと、
(d)前記溝から前記微粒子材料をすくい取ると共に、計量された量の微粒子材料を、前記第2の開口部を通じて送達すること、並びに
(e)前記計量された材料をフラッシュ蒸着すること
を含む、微粒子材料を気化するための方法。 - 前記すくい取ることは、スクレーパによって提供され、該スクレーパの位置を調整して、前記第2の開口部を通じて送達される計量された材料の量を制御する、請求項18に記載の方法。
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US11/970,548 US7883583B2 (en) | 2008-01-08 | 2008-01-08 | Vaporization apparatus with precise powder metering |
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PCT/US2008/013973 WO2009088444A1 (en) | 2008-01-08 | 2008-12-22 | Vaporization apparatus with precise powder metering |
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- 2008-12-22 JP JP2010542208A patent/JP5189658B2/ja active Active
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WO2009088444A1 (en) | 2009-07-16 |
TWI432596B (zh) | 2014-04-01 |
KR101577683B1 (ko) | 2015-12-15 |
CN101939463A (zh) | 2011-01-05 |
US8101235B2 (en) | 2012-01-24 |
US20090176016A1 (en) | 2009-07-09 |
EP2242868A1 (en) | 2010-10-27 |
JP2011511154A (ja) | 2011-04-07 |
US7883583B2 (en) | 2011-02-08 |
KR20100102206A (ko) | 2010-09-20 |
CN101939463B (zh) | 2012-02-29 |
US20110076403A1 (en) | 2011-03-31 |
TW200940739A (en) | 2009-10-01 |
EP2242868B1 (en) | 2013-10-30 |
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