JP5181662B2 - Contact method and contact device - Google Patents

Description

  The present invention relates to a contact method and a contact device.

  Improvements in the bonding process for wafers and chips have attracted a great deal of attention in the MEMS and packaging fields. From the viewpoint of yield and throughput, relative alignment of the opposing surfaces (including alignment and twist direction), chips and wafers, etc. When joining the objects to be joined together, it is required to keep the relative positional relationship between the objects to be joined within a predetermined accuracy and to adjust the parallelism between both objects to be joined within a predetermined accuracy. Therefore, a joining method based on this requirement has been proposed (see, for example, Patent Documents 1, 2, and 3).

  In this bonding method, an upper reflection surface that converts an optical path between an upper direction and a side direction by reflection, and an optical path between a lower direction and a side direction between opposing surfaces of the objects to be bonded arranged above and below. One sensor disposed on the side of the mirror means by inserting a mirror means having a lower reflecting surface for converting the light, and selectively using one of the upper and lower reflecting faces by adjusting the position in the vertical direction The beam projecting / receiving unit is configured to project a beam onto each facing surface through the mirror unit and receive a reflected beam from each facing surface, and the position of the focused spot of the reflected beam in the beam projecting / receiving unit is shifted. Based on the amount, the inclination of each opposing surface with respect to the reference surface when the amount of positional deviation is zero is obtained, and the parallelism between the opposing surfaces is obtained from the inclination so that the parallelism falls within the target range. Adjust the inclination of at least one of the facing surfaces After, it is that joining the objects to be bonded to each other.

  Patent Document 2 discloses a method (FORMULA method) for forming a microstructure by bonding and transferring a thin film using room temperature bonding. Since room-temperature bonding is non-heated, high-precision microfabrication can be achieved, but on the other hand, very high relative parallelism is required on the opposing surface, so an electrostatic chuck that holds the substrate flat or parallel or twisted at any angle. A mechanism to adjust using the "neck swing mechanism" is shown.

On the other hand, nanoimprinting and micromolding have attracted attention in recent years for microfabrication technology that involves pressure welding, and an apparatus that puts an elastic body in part of the support part to adjust the parallelism between the mold and the workpiece is shown. It has been done.
JP 2004-266191 A JP 2001-115275 A JP 2004-34300 A

  Therefore, an object of the present invention is to provide a contact method and a contact device that can efficiently perform contact with less error in parallelism and twist between contact objects compared to the case where this configuration is not adopted. There is to do.

  In order to achieve the above object, one embodiment of the present invention provides the following contact method and contact device.

[ 1 ] On the first arrangement surface on which the first contact object is arranged, 45 with respect to the first side reflection surface perpendicular to the first arrangement surface and the first side reflection surface. A first disposing step of detachably disposing a first reflector having a 45-degree reflecting surface inclined at a degree;
First measurement emitted from the first light source from the measuring device to the first side reflective surface of the first reflector having a light source for emitting the installed laser beam to the side of the reflector A first adjustment that irradiates light, receives the first measurement light reflected by the first side reflection surface, and adjusts an attitude of the measurement device based on a light receiving position of the first measurement light. Steps,
Irradiate the second measuring light emitted from the light source in parallel to the first measuring light on the 45-degree reflecting surface of the first reflector from the measuring device, and reflect on the 45-degree reflecting surface, The second measurement light reflected by the second arrangement surface provided opposite to the first arrangement surface and reflected again by the 45-degree reflection surface is received, and the light receiving position of the second measurement light A second adjusting step for adjusting parallelism between the first and second arrangement surfaces based on
A first substrate carrying the first contact object is arranged on the first arrangement surface instead of the first reflector, and the second reflector is substituted on the second arrangement surface. A second arrangement step of arranging the second contact object;
A contact step of moving the second arrangement surface relative to the first arrangement surface to bring the contact surface of the first contact object into contact with the contact surface of the second contact object. Contact method.

[ 2 ] A first reflector having a 45-degree reflection surface inclined at 45 degrees with respect to the first arrangement surface is detachably arranged on the first arrangement surface on which the first contact object is arranged. And parallel to the second arrangement surface on a second arrangement surface on which the second contact object that is provided facing the first arrangement surface and is joined to the first contact object is arranged. A first disposing step of disposing a second reflector having a parallel reflecting surface and a second side reflecting surface perpendicular to the second disposing surface;
The measurement device disposed on the side of the first reflector irradiates the 45-degree reflection surface of the first reflector with measurement light, reflects the measurement light on the 45-degree reflection surface, and the second reflector. The measurement light reflected by the parallel reflection surface and reflected again by the 45 degree reflection surface is received, and the parallelism between the first and second arrangement surfaces is adjusted based on the light reception position of the measurement light. A second adjustment step;
Moving the second placement surface relative to the first placement surface to a position where the second side reflection surface of the second reflector is irradiated with the measurement light; Irradiating the second side reflection surface of the second reflector with the measurement light, receiving the measurement light reflected by the second side reflection surface, and based on a light receiving position of the measurement light A third adjusting step for adjusting a twist of the second arrangement surface with respect to the first arrangement surface;
A first substrate carrying the first contact object is arranged on the first arrangement surface instead of the first reflector, and the second reflector is substituted on the second arrangement surface. A second arrangement step of arranging the second contact object;
A contact step of moving the second arrangement surface relative to the first arrangement surface to bring the contact surface of the first contact object into contact with the contact surface of the second contact object. Contact method.

[ 3 ] On the first arrangement surface on which the first contact object is arranged, 45 with respect to the first side reflection surface perpendicular to the first arrangement surface and the first side reflection surface. A second contact object, which is detachably disposed with a first reflector having a 45-degree reflection surface inclined at an angle, is provided to face the first arrangement surface, and is joined to the first contact object. A second reflector having a parallel reflection surface parallel to the second arrangement surface and a second side reflection surface perpendicular to the second arrangement surface on the second arrangement surface where A first placement step for placement;
A first measurement is applied to the first side reflecting surface of the first reflector from a measuring device installed on the side of the first reflector, and the first side reflecting surface reflects the first measurement. A first adjustment step of receiving the first measurement light and adjusting an attitude of the measurement device based on a light receiving position of the first measurement light;
The second measuring light is irradiated from the measuring device onto the 45-degree reflecting surface of the first reflector in parallel with the first measuring light, reflected by the 45-degree reflecting surface, and the second reflector. The second measurement light reflected by the parallel reflection surface and reflected again by the 45-degree reflection surface is received, and the distance between the first and second arrangement surfaces is determined based on the light reception position of the second measurement light. A second adjustment step for adjusting the parallelism of
Relative to the first arrangement surface until the second arrangement surface is irradiated with the first or second measurement light on the second side reflection surface of the second reflector. The first measurement light is moved, irradiated with the first or second measurement light to the second side reflection surface of the second reflector from the measurement device, and reflected by the second side reflection surface. Or a third adjustment step of receiving the second measurement light and adjusting the twist of the second arrangement surface with respect to the first arrangement surface based on the light receiving position of the first or second measurement light;
A first substrate carrying the first contact object is arranged on the first arrangement surface instead of the first reflector, and the second reflector is substituted on the second arrangement surface. A second arrangement step of arranging the second contact object;
A contact step of moving the second arrangement surface relative to the first arrangement surface to bring the contact surface of the first contact object into contact with the contact surface of the second contact object. Contact method.

[ 4 ] In the contact step, the contact surface of the first contact target and the contact surface of the second contact target are brought into contact with each other, and the second placement surface is joined from the first placement surface. The contact method according to [1], [2], or [3] , wherein the first contact target is peeled off from the first substrate and transferred to the second contact target side.

[ 5 ] The contact step cleans the contact surface of the first contact object and the contact surface of the second contact object before the contact surfaces contact each other, The contact method according to [ 4 ], wherein the contact surface and the contact surface of the second contact target are directly contacted and joined.

[ 6 ] The placement of the first reflector and the first substrate in the first and second placement steps is performed using an electrostatic chuck, a magnetic chuck, or a vacuum chuck. [1], [2] Or the contact method as described in [3] .

[ 7 ] First and second arrangement surfaces that are provided to face each other and are relatively movable in a predetermined direction;
45 degrees tilted at 45 degrees with respect to the first side reflection surface that is detachably provided on the first arrangement surface and perpendicular to the first arrangement surface. A first reflector having a reflective surface;
A second reflection which is detachably provided on the second arrangement surface, and has a parallel reflection surface parallel to the second arrangement surface and a second side reflection surface perpendicular to the second arrangement surface. Body,
The first and second measurement lights are disposed on the side of the first reflector and have an interval corresponding to the first side reflection surface and the 45 ° reflection surface of the first reflector. Then, the reflected first and second measurement lights are received, the parallelism between the first and second arrangement surfaces based on the light receiving positions of the first and second measurement lights, and the first And a measuring device that measures a twist in the θ direction of the second arrangement surface with respect to the arrangement surface.

According to the contact method according to claim 1 , compared with the case where the present configuration is not adopted, even when the initial position of the measuring device is deviated, the contact with which the error in parallelism between the contact objects is reduced can be efficiently performed. Can be implemented.

According to the contact method according to claim 2 , it is possible to efficiently perform the contact in which the parallelism between the objects to be contacted and the torsion error are reduced as compared with the case where this configuration is not adopted.

According to the contact method according to claim 3 , compared to the case where this configuration is not adopted, even if the initial position of the measuring device is deviated, the contact with which the parallelism between the objects to be touched and the torsion error are reduced, Can be implemented efficiently.

According to the contact method of the fourth aspect , it is possible to perform peeling and transfer in one step compared to the case where this configuration is not adopted.

According to the contact method according to the fifth aspect , it is possible to efficiently produce a highly accurate component as compared with the case where this configuration is not adopted.

According to the contact method according to the sixth aspect , it is possible to efficiently produce a highly accurate component as compared with the case where this configuration is not adopted.

According to the contact device according to claim 7 , compared with the case where this configuration is not adopted, even if the initial position of the measurement device is displaced, the contact with which the parallelism between the contact objects and the error in torsion are reduced, Can be implemented efficiently.

[First Embodiment]
FIG. 1 is a diagram showing a bonding apparatus according to a first embodiment of the present invention, FIG. 2 is a plan view of a first reflector, and FIG. 3 is a plan view of a second reflector. In FIG. 1, x and y are two axes orthogonal to each other in the horizontal direction, z is an axis in the vertical direction, and θ is a rotation direction around the z axis. As this joining device (contact device) 1, for example, the one disclosed in Japanese Patent No. 3161362 can be used.

  In the bonding apparatus 1, a first stage 2 having a first arrangement surface 2a on which a first contact object is arranged on an upper surface and a second contact object that is in contact with the first contact object are arranged. A third stage 3 having a second arrangement surface 3a on the lower surface, a first reflector 5 detachably attached to the first arrangement surface 2a of the first stage 2 by an electrostatic chuck 4, and a second The second reflector 6 detachably attached to the second arrangement surface 3 a of the stage 3, the optical microscope 7 attached to the second stage 3, and the side of the first reflector 6. And the whole is installed in a vacuum chamber (not shown).

  The first stage 2 includes an x stage 20 that moves in the x-axis direction, a y stage 21 that moves in the y-axis direction, and a θ stage 22 that moves in the θ direction, and is movable in the x, y, and θ directions. It is configured. The first stage 2 is made of a metal such as stainless steel or aluminum alloy.

  The second stage 3 includes a top plate 30 having a second arrangement surface 3a on the lower surface, a lifting shaft 31 that raises and lowers the top plate 30 in the z-axis direction, and the entire second stage 3 in a direction around the x-axis ( And an angle adjustment mechanism (not shown) capable of adjusting the angle in the direction around the y-axis (roll) and the direction around the z-axis (yaw). The second stage 3 is made of a metal such as stainless steel or aluminum alloy.

  The electrostatic chuck 4 fixes the object to be adsorbed by electrostatic force acting between the internal electrodes when a voltage is applied to the internal electrode (however, limited to the dielectric substrate). In addition, instead of the electrostatic chuck, a magnetic chuck (limited to the magnetic substrate) that is fixed by a magnetic force using an electromagnet, etc., a vacuum (porous body) that serves as an adsorption surface, and a vacuum that adsorbs an object to be adsorbed using negative pressure A chuck (however, only for use other than the vacuum process) may be used.

(First reflector)
As shown in FIG. 1, the first reflector 5 includes a first reflecting member carrying substrate 50 that is detachably attached to the first arrangement surface 2 a of the first stage 2 by an electrostatic chuck 4, and the first reflector 5. And the first reflecting member 51 fixed on the reflecting member carrying substrate 50.

  As shown in FIG. 2, the first reflecting member carrying substrate 50 has a disk shape, and a part of the side surface is a flat reference surface 50 a, and a plurality of (for example, three) locations are provided on the upper surface. Are provided with an alignment mark 50b by a cross mark. The first reflecting member carrying substrate 50 is formed of a material that can be adsorbed to the electrostatic chuck 4, for example, a Si wafer, a glass substrate, or the like.

  As shown in FIG. 1 and FIG. 2, the first reflecting member 51 has a quadrangular prism shape, and the bottom surface 51 a becomes a surface joined to the first reflecting member carrying substrate 50, and among the four side surfaces of the quadrangular prism shape. One side surface is a first side reflecting surface 51b perpendicular to the bottom surface 51a, and a 45 degree reflecting surface 51c inclined at 45 degrees with respect to the first side reflecting surface 51b is formed. The first reflecting member 51 is made of metal, and the first side reflecting surface 51b and the 45 ° reflecting surface 51c are mirror-finished. The first reflecting member 51 may be formed of a non-metal, and a metal film may be deposited on the non-metallic surface as the first side reflecting surface 51b and the 45-degree reflecting surface 51c.

(Second reflector)
As shown in FIG. 1, the second reflector 6 includes a second reflecting member carrying substrate 60 detachably attached to the second arrangement surface 3 a of the second stage 3, and a second reflecting member carrying substrate. And a second reflecting member 61 fixed on 60.

  As shown in FIG. 3, the second reflecting member carrying substrate 60 has a rectangular shape. The second reflecting member carrying substrate 60 abuts a rectangular bottom surface and an end surface on two abutting surfaces (not shown) of the second stage 3, and a second arrangement surface 3a of the second stage 3 with an adhesive. Fixed on top.

  As shown in FIGS. 1 and 3, the second reflecting member 61 has a quadrangular prism shape, the bottom surface 61a is a surface joined to the second reflecting member carrying substrate 60, and the top surface is parallel to the bottom surface 61a. The parallel reflection surface 61b is formed, and one of the four side surfaces of the quadrangular prism shape is the second side reflection surface 61c perpendicular to the bottom surface 61a. The second reflecting member 61 is made of metal, and the parallel reflecting surface 61b and the second side reflecting surface 61c are mirror-finished. The second reflecting member 61 may be formed of a non-metal, and a metal film may be deposited on the non-metallic surface as the parallel reflecting surface 61b and the second side reflecting surface 61c.

(Measurement device)
FIG. 4 is a diagram illustrating an example of the internal structure of the measuring device 8. The measuring device 8 has a light source for emitting laser light, an autocollimator 80 having a light receiving element for detecting a light receiving position of the return light of the laser light, and first measurement of the laser light emitted from the light source of the autocollimator 80. A beam splitter prism 81 branched into two of the light 17A and the second measuring light 17B, a reflecting prism 82 reflecting one of the second measuring beams 17B branched by the beam splitter prism 81, a beam splitter prism 81, and The angle of the first and second shutters 83A and 83B disposed in front of the reflecting prism 82 and the housing 84 can be adjusted to the pitch (around the x axis), the roll (around the y axis), and the yaw (around the z axis). An angle adjustment unit 85. The measuring device 8 is not limited to that shown in the figure.

  The first measurement light 17A emitted from the measurement device 8 irradiates the side reflection surface 51b of the first reflection member 51, and the second measurement light 17B emitted from the measurement device 8 is the first measurement light. The positional relationship is such that the 45-degree reflecting surface 51c of the first reflecting member 51 is irradiated in parallel with the light 17A.

  The beam splitter prism 81 has a half mirror 81a formed on the 45-degree plane of the triangular prism, and the laser light emitted from the autocollimator 80 is transmitted in two directions, that is, light transmitted through the half mirror 81a and reflected light. Branch off. The first measurement light 17A reflected by the first reflector 5 is transmitted through the half mirror 81a of the beam splitter prism 81, and the second measurement light 17B reflected by the first reflector 5 is the beam splitter. It returns to the autocollimator 80 by being reflected by the half mirror 81a of the prism 81.

(Positioning of first and second arrangement surfaces)
Next, positioning of the first and second arrangement surfaces will be described with reference to FIGS. The following adjustment methods are performed in a vacuum chamber.

(1) Set of 1st and 2nd reflector In addition, the 1st arrangement surface 2a of the 1st stage 2 shall be installed horizontally using the level etc. The first reflecting member carrying substrate 50 on which the first reflecting member 51 is fixed is set on the first arrangement surface 2 a of the first stage 2 by the electrostatic chuck 4. The second reflecting member carrying substrate 60 to which the second reflecting member 61 is fixed is set on the second arrangement surface 3 a of the second stage 3.

(2) Initialization of the first stage 2 The x-axis and y-axis of the first stage 2 are matched with the x-axis and y-axis of the first reflector 5. This is performed by observing the alignment mark 50 b formed on the first reflecting member carrying substrate 50 with the optical microscope 7.

(3) Calibration of Measuring Device The first shutter 83A of the measuring device 8 is opened, the second shutter 83B is closed, and laser light is emitted from the light source of the autocollimator 80. The laser light emitted from the light source is branched by the beam splitter prism 81, and then irradiated to the side reflecting surface 51b of the first reflecting member 51 as the first measuring light 17A via the first shutter 83A. The first measurement light 17 </ b> A reflected by the side reflection surface 51 b passes through the beam splitter prism 81 and is then received by the light receiving element of the autocollimator 80. The pitch and yaw of the measuring device 8 are measured based on the light receiving position of the first measuring light 17A in the light receiving element.

  Based on the pitch and yaw measurement results of the measuring device 8, the pitch and yaw of the measuring device 8 are adjusted by the angle adjustment unit 85 so that the first measurement light 17 </ b> A returns to the center of the light receiving element.

  5A shows a state in which the measuring device 8 is inclined by a pitch (around the x axis) φ1. In this case, by adjusting the pitch φ1 so that the first measurement light 17A emitted from the measurement device 8 returns to the center of the light receiving element, as shown in FIG. The posture is adjusted so that the measurement light 17A coincides with the y-axis direction.

(4) Measurement of parallelism between first and second arrangement surfaces Both first and second shutters 83A and 83B of measurement device 8 are opened, and laser light is emitted from the light source of autocollimator 80. The laser beam emitted from the light source is branched into the first and second measurement beams 17A and 17B by the beam splitter prism 81, and the first measurement beam 17A is the first side reflection surface of the first reflection member 51. The light is reflected by 51 b and received by the light receiving element via the beam splitter prism 81 again. On the other hand, the second measurement light 17B is reflected by the reflecting prism 82 and emitted, then reflected by the 45 ° reflecting surface 51c, reflected by the parallel reflecting surface 61b of the second reflecting member 61, and again by the 45 ° reflecting surface. 51 c, reflected by the reflecting prism 82 and the beam splitter prism 81, and received by the light receiving element of the autocollimator 80. Based on the light receiving positions of the first and second measuring beams 17A and 17B, the parallelism between the first and second arrangement surfaces 2a and 3a is measured.

  The inclination (pitch, roll) of the second placement surface 3a of the second stage 3 is adjusted based on the parallelism measurement result. In the case shown in FIG. 5C, the parallel reflection surface 61b of the second reflection member 61 is inclined by φ2. In this case, by adjusting the inclination φ2 of the second placement surface 3a of the second stage 3, as shown in FIG. 5D, the first placement surface 2a and the second placement surface 2a of the first stage 2 are adjusted. The second arrangement surface 3a of the stage 3 becomes parallel.

(5) Measurement of torsion between first and second arrangement surfaces Next, the first reflector 5 is placed on the first stage 2 so that the first reflector 5 and the second reflector 6 do not interfere with each other. To move away from the measuring device 8. Next, the second reflector 6 is lowered by the second stage 3, and the second measurement light 17 </ b> B is reflected by the second side reflection surface of the second reflection member 61 as shown in FIG. 6A. It moves to the position which irradiates 61c.

  The first shutter 83 </ b> A of the measuring device 8 is closed, the second shutter 83 </ b> B is opened, and laser light is emitted from the light source of the autocollimator 80. After the laser light emitted from the light source is branched by the beam splitter prism 81, the second measurement light 17B is reflected by the reflecting prism 82, and the second light of the second reflecting member 61 is reflected via the second shutter 83B. The side reflecting surface 61c is irradiated. The second measurement light 17B reflected by the second side reflecting surface 61c is reflected by the reflecting prism 82 and the beam splitter prism 81 and then received by the light receiving element of the autocollimator 80. Based on the light receiving position of the second measurement light 17B in the light receiving element, the twist between the first and second arrangement surfaces, that is, the yaw (angle around the z axis) of the second reflector 6 with respect to the first arrangement surface 2a. ).

  An angle adjustment mechanism (not shown) of the second stage 3 is adjusted so that the second measurement light 17B returns to the center of the light receiving element based on the yaw measurement result of the second reflector 6.

  The case shown in FIG. 6B shows a state where the second reflector 6 is shifted by θ1. In this case, by adjusting the second stage 3 so that the second measurement light 17B emitted from the measuring device 8 returns to the center of the light receiving element, as shown in FIG. The second arrangement surface 3a is not twisted with respect to the surface 2a.

  After the adjustment of the first and second arrangement surfaces 2a and 3a is completed, the first and second reflectors 5 and 6 are removed from the first and second arrangement surfaces 2a and 3a.

(Manufacturing method of microstructure)
FIG. 7 is a diagram illustrating an example of a manufacturing process of a microstructure. After the positioning of the first and second arrangement surfaces is completed as described above, a microstructure as a joining component is manufactured as follows.

(1) Production of donor substrate First, a first substrate made of a Si wafer is prepared. Note that a glass substrate or the like may be used as the first substrate in addition to the Si wafer.

  Next, a release layer made of polyimide is deposited on the first substrate to a thickness of 5 μm, for example, by sputtering. In addition to the polyimide, a known material such as fluorinated polyimide or silicon oxide can be used as the release layer. Further, as the release layer, a thermal oxide film having a thickness of, for example, 0.3 μm formed by performing a thermal oxidation process on the first substrate may be used. In addition to the sputtering method, a general thin film forming method such as a molecular beam epitaxial method, a chemical vapor deposition method, a vacuum vapor deposition method, or a spin coating method can be used as a method for depositing a release layer. . By using the release layer, when the first substrate placed on the first stage 2 and the second substrate placed on the second stage 3 are pressed and separated, the thin film pattern becomes the release layer. Can be easily peeled off and transferred to the second substrate side.

  Next, a thin film as a constituent material of the microstructure is deposited on the surface of the release layer to a thickness of 0.5 μm, for example, by sputtering. As a constituent material of the microstructure, for example, a metal such as Al, copper, tantalum, or indium, an insulator such as ceramics (alumina, aluminum nitride, silicon carbide), or the like can be used. As a thin film deposition method, in addition to the sputtering method, a general thin film formation method such as a molecular beam epitaxial method, a chemical vapor deposition method, a vacuum vapor deposition method, a spin coating method, or the like can be used.

  Next, the thin film is patterned by lithography to form a thin film pattern and alignment marks as a plurality of first, second, and third layers of the microstructure at the same time, thereby producing a donor substrate. To do. For the patterning, a focused ion beam (FIB) method, an electron beam direct writing method, or the like can be used in addition to the above-described lithography method. However, the lithography method is preferable because high planar shape accuracy is obtained and mass productivity is high. . In order to simplify the description, three cases are shown as thin film patterns constituting the microstructure. Further, the number of alignment marks is not limited to one, and two or more alignment marks may be provided. By providing two or more, positioning in the θ direction can be performed.

  As described above, as shown in FIG. 7A described later, a plurality of thin film patterns 14A, 14B, 14C, and alignment marks 15 are formed on the first substrate 11 with the release layer 12 interposed therebetween. The donor substrate 10 arranged on the first arrangement surface 2a is produced.

(2) Production of Second Substrate As shown in FIG. 7A to be described later, a second substrate 18 is produced as a bonding target arranged on the second arrangement surface 3a. The second substrate 18 has, for example, a convex portion 18 a having a size of 1 mm square and a height of 20 to 30 μm at the center of the surface on the first stage 2 side, and is located at the center of the surface on the second stage 3 side. For example, the projection 18b has a size of 1 mm square and a height of 20 to 30 μm.

  The second substrate 18 may be made of a material that can be removed by etching from the microstructure after the thin film pattern is transferred to the top surface of the protrusion 18a to form the microstructure, for example, a Si wafer. it can. By providing the convex portion 18a on the surface of the second substrate 18 on the first stage 2 side, the thin film pattern that the second substrate 18 is currently transferring when the second substrate 18 and the donor substrate 10 are pressed against each other. It is possible to prevent interference with other thin film patterns. Further, by providing the convex portion 18b on the surface of the second substrate 18 on the second stage 3 side, the periphery of the second stage 3 is deformed when the second substrate 18 and the donor substrate 10 are pressed. However, it is possible to uniformly apply a load to the entire thin film pattern and to prevent a decrease in yield.

  In addition, although the top surface of the convex part 18a is a flat surface, in order to make load distribution of a thin film pattern uniform, a curved surface with a high center may be sufficient. Further, when there is little deformation around the second stage 3 during pressure contact, the second substrate 18 does not have to be provided with the convex portion 18b on the second stage 3 side.

(3) Lamination | stacking of thin film pattern Fig.7 (a)-(i) is a front view which shows a lamination process. First, as shown in FIG. 7A, the donor substrate 10 is set on the first arrangement surface 2a of the first stage 2 using an electrostatic chuck. At this time, the alignment mark 15 is observed with the optical microscope 7. Further, the second substrate 18 is set on the second arrangement surface 3 a of the second stage 3. The second substrate 18 is set using an adhesive.

  Next, the inside of the vacuum chamber is evacuated to a high vacuum state or an ultrahigh vacuum state. Next, the first stage 2 is moved in the horizontal direction, and the first thin film pattern 14 </ b> A of the donor substrate 10 is positioned immediately below the convex portion 18 a of the second substrate 18. Next, the surface of the second substrate 18 and the surface of the first thin film pattern 14A are cleaned by irradiating them with an argon atom beam.

Next, as shown in FIG. 7B, the second stage 2 is lowered, and the second substrate 18 and the donor substrate 10 are kept at a predetermined time (for example, 10 kgf / cm ² ) with a predetermined load force (for example, 10 kgf / cm ² ). For example, pressing is performed for 5 minutes, and the second substrate 18 and the first thin film pattern 14A are bonded at room temperature.

  Here, “normal temperature bonding” means that the surfaces to be bonded are irradiated with a neutral atom beam, an ion beam or the like to clean the surfaces, and then the cleaned bonding surfaces are in a normal temperature (for example, 15 to 25 ° C.) atmosphere. This is a bonding method in which atoms directly contact each other and atoms are directly bonded to each other, and is also referred to as surface activated bonding. By bonding the thin film pattern by room temperature bonding, a change in the shape and thickness of the thin film pattern is small, and a highly accurate microstructure can be obtained. When joining, no load may be applied. In addition to room temperature bonding, the cleaned bonding surfaces may be bonded to each other by heating at a predetermined temperature (for example, 100 ° C. or less). Moreover, the object to be joined is not limited to a thin film of 100 μm or less, and may be thicker than 100 μm.

  Next, as shown in FIG. 7C, when the second stage 3 is raised, the first thin film pattern 14A is peeled off from the first substrate 11 and transferred to the second substrate 18 side. . This is because the adhesion between the thin film pattern 14A and the second substrate 18 is greater than the adhesion between the thin film pattern 14A and the release layer 12 of the first substrate 11.

  Next, as shown in FIG. 7D, the first stage 2 is moved in the horizontal direction, and the second-layer thin film pattern 14 </ b> B on the donor substrate 10 is positioned immediately below the second substrate 18. Next, the surface of the thin film pattern 14A transferred to the second substrate 18 side (the surface in contact with the first substrate 11) and the surface of the second thin film pattern 14B are irradiated with an argon atom beam. Clean.

  Next, as shown in FIG. 7 (e), the second stage 3 is lowered to join the first thin film pattern 14A and the second thin film pattern 14B, as shown in FIG. 7 (f). When the second stage 3 is raised, the second-layer thin film pattern 14B is peeled off from the first substrate 11 and transferred to the second substrate 18 side.

  In the same manner as described above, the third-layer thin film pattern 14C is positioned, pressed, and separated between the donor substrate 10 and the second substrate 18 as shown in FIGS. 7 (g), (h), and (i). By repeating, a plurality of thin film patterns 14A, 14B, and 14C corresponding to each cross-sectional shape of the microstructure are transferred onto the second substrate 18 as shown in FIG. 7 (i). When the laminated body transferred onto the second substrate 18 is removed from the second stage 3, a microstructure including the thin film patterns 14A, 14B, and 14C is obtained.

(Effects of the first embodiment)
According to the present embodiment, the posture is adjusted, the measurement light is emitted from the fixed measuring device 8, and the first and second arrangement surfaces 2a and 3b are highly accurate based on the light receiving position of the reflected light. Therefore, the parallelism between the first and second arrangement surfaces 2a and 3a and the torsion degree of the first and second arrangement surfaces can be measured within plus or minus 0.02 °, and the stage geometry can be measured. Control was possible within the same error.

[Second Embodiment]
FIG. 8 shows an LED chip mounting apparatus according to the second embodiment of the present invention. This LED chip device (contact device) 100 is for LPH (LED Print Head Module). In LPH, it is necessary to mount an LED array chip, a lens on the LED array chip, and the like on a substrate on which a driver IC and the like are pre-assembled with high accuracy in all of parallelism, torsion, and relative position. In FIG. 8, 101 is a microscope, 102 is a first stage, 103 is a component replacement robot, 110 is a second stage, 111 is an ultrasonic generator, 112 is a vacuum suction stage, 120 is a component to be mounted, 130 Is a mounting substrate.

  8 differs from FIG. 1 in that the position of the microscope 101 that aligns a component mounted on a substrate such as an LED chip array with the mounting substrate is disposed below the first stage 102. The alignment marks on the upper substrate and the substrate on the second stage 110 are individually detected by the microscope 101, and the image is stored in a computer or the like and image processing is performed, thereby enabling more precise alignment. Moreover, it is necessary to form the alignment mark formed on the first reflector on the back surface of the reflector.

  As described in the first embodiment, after positioning the first and second arrangement surfaces and removing the first and second reflectors from the first and second arrangement surfaces, the first and second arrangement surfaces are removed. A component 120 to be mounted is placed on the stage 102, and a mounting substrate 130 is placed on the second stage 110. After positioning, the components are pressed with a constant load. Ultrasonic waves are generated by an ultrasonic generator 111 incorporated in the second stage 110, and gold bumps (not shown) provided in the component installation by ultrasonic bonding are bonded to gold pads provided on the substrate. . After bonding, when the chuck of the first stage 102 is turned off and separated, components are mounted and transferred to the second stage 110 side, and an electric circuit is formed between the LED chip and the substrate. Next, a desired LPH mounting substrate can be obtained by exchanging the components arranged on the first stage 102 and repeating the component mounting process.

  In the above embodiment, the LED chip is bonded by ultrasonic bonding, but may be soldered by heating, and any bonding means can be used depending on the required accuracy and throughput.

[Third Embodiment]
FIG. 9 shows a nanoimprint apparatus according to a third embodiment of the present invention. In FIG. 9, 201 is a microscope, 210 is a first stage, 211 is a heater, 212 is an electrostatic chuck, 220 is a second stage, 221 is a heater, 222 is a magnetic chuck, and 230 is an object to be molded. A processing member (thermoplastic resin), 240 is a micromold (magnetic material).

  The nanoimprint apparatus (contact apparatus) 200 differs from FIG. 1 in that a heater is incorporated in the first stage 210 and the second stage 220.

  As described in the first embodiment, after positioning the first and second arrangement surfaces and removing the first and second reflectors from the first and second arrangement surfaces, the first and second arrangement surfaces are removed. The processing member 230 molded on the stage 210 is set, and the micromold 240 is set on the second stage 220, and both the stages 210 and 220 are heated and pressed. When the micromold 240 is separated after a predetermined time, the inverted shape of the micromold 240 is transferred to the processing member 230 on the first stage 210. In this example, nanoimprint using a thermoplastic resin (thermal nanoimprint) is used. However, a flash lamp is used instead of a heater, and a photocurable resin is used, so that it can be applied to an optical nanoimprint apparatus. Alternatively, nanoimprint using only plastic deformation, or improved nanoimprint using an ultrasonic transducer and improved releasability may be used.

  The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. For example, in the first embodiment, the thin film pattern is formed using a semiconductor process, but may be formed using electroforming. In this case, a metal substrate or a non-metal substrate with a metal film formed thereon is used as the substrate.

  In the measurement of parallelism shown in FIG. 5C, the parallelism is measured by irradiating the 45-degree reflection surface 51c of the first reflector 5 with the second measurement light 17B. The parallelism may be measured by irradiating the reflection surface 51c with 17A.

  In the measurement of parallelism shown in FIG. 5C, the parallelism is measured by irradiating the second measuring light 17B to the parallel reflecting surface 61b of the second reflector 6, but the second reflector 6 is measured. The parallelism may be measured by directly irradiating the second measuring surface 17B to the second arrangement surface 3a without using the above.

  In the twist measurement shown in FIG. 6A, the second measurement light 17B is applied to the second side reflection surface 61c of the second reflector 6 to measure the twist. You may measure (theta) by irradiating the light 17B to the 2nd side reflective surface 61c.

  Further, the target substrate may be used as the second reflector. In this case, the top surface of the convex portion on the first stage side of the target substrate is a parallel reflecting surface, and the side surface or the other side surface of the convex portion is the second side reflecting surface.

  In addition to room temperature bonding, the technology of the present invention can be applied to the nanoimprint apparatus, wafer bonding apparatus, electronic component mounting apparatus (mounter), and the like.

It is a figure which shows the joining apparatus which concerns on the 1st Embodiment of this invention. FIG. 2 is a plan view of the first reflector. FIG. 3 is a plan view of the second reflector. FIG. 4 is a diagram showing the internal structure of the measuring device. FIGS. 5A to 5D are diagrams for explaining a method of adjusting the second stage. FIGS. 6A to 6C are diagrams for explaining a method of adjusting the second stage. 7A (a) to 7 (d) are front views showing a stacking process according to the embodiment of the present invention. 7B (e) to (i) are front views showing the stacking process according to the embodiment of the present invention. FIG. 8 is a diagram showing an LED chip mounting apparatus according to the second embodiment of the present invention. FIG. 9 is a diagram showing a nanoimprint apparatus according to the third embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Joining apparatus 2 1st stage 2a 1st arrangement surface 3 2nd stage 3a 2nd arrangement surface 4 Electrostatic chuck 5 1st reflector 6 2nd reflector 7 Optical microscope 8 Measuring device 10 Donor substrate 11 First substrate 12 Release layer 14A, 14B, 14C Thin film pattern 17A First measurement light 17B Second measurement light 18 Second substrate 18a, 18b Convex part 20 x stage 21 y stage 22 θ stage 30 Top plate 31 Elevating shaft 50 First reflecting member carrying substrate 50a Reference surface 50b Alignment mark 51 First reflecting member 51a Bottom surface 51b First side reflecting surface 51c 45 degree reflecting surface 60 Second reflecting member carrying substrate 61 Second Reflective member 61a Bottom surface 61b Parallel reflective surface 61c Second side reflective surface 80 Autocollimator 81 Beam splitter prism 81a Half mirror 82 Reflective prism 83A First shutter 83B Second shutter 84 Housing 85 Angle adjustment unit 100 LED chip device 101 Microscope 102 First stage 103 Parts replacement robot 110 Second stage 111 Ultrasonic generator 112 Vacuum suction stage 120 Mounted Component 130 Mounting substrate 200 Nanoimprint apparatus 201 Microscope 210 First stage 211 Heating heater 212 Electrostatic chuck 220 Second stage 221 Heating heater 222 Magnetic chuck 230 Processing member (thermoplastic resin)
240 Micromold

Claims (7)

On the first arrangement surface on which the first contact object is arranged, the first side reflection surface perpendicular to the first arrangement surface and the first side reflection surface are inclined at 45 degrees. A first disposing step of detachably disposing the first reflector having a 45-degree reflecting surface;
First measurement emitted from the first light source from the measuring device to the first side reflective surface of the first reflector having a light source for emitting the installed laser beam to the side of the reflector A first adjustment that irradiates light, receives the first measurement light reflected by the first side reflection surface, and adjusts an attitude of the measurement device based on a light receiving position of the first measurement light. Steps,
Irradiate the second measuring light emitted from the light source in parallel to the first measuring light on the 45-degree reflecting surface of the first reflector from the measuring device, and reflect on the 45-degree reflecting surface, The second measurement light reflected by the second arrangement surface provided opposite to the first arrangement surface and reflected again by the 45-degree reflection surface is received, and the light receiving position of the second measurement light A second adjusting step for adjusting parallelism between the first and second arrangement surfaces based on
A first substrate carrying the first contact object is arranged on the first arrangement surface instead of the first reflector, and the second reflector is substituted on the second arrangement surface. A second arrangement step of arranging the second contact object;
A contact step of moving the second arrangement surface relative to the first arrangement surface to bring the contact surface of the first contact object into contact with the contact surface of the second contact object. Contact method. On the first arrangement surface where the first contact object is arranged, the first reflector having a 45-degree reflection surface inclined at 45 degrees with respect to the first arrangement surface is detachably arranged, and Parallel reflection parallel to the second arrangement surface on the second arrangement surface, which is provided opposite to the first arrangement surface and on which the second contact object to be joined to the first contact object is arranged. A first disposing step of disposing a second reflector having a surface and a second side reflecting surface perpendicular to the second disposing surface;
The measurement device disposed on the side of the first reflector irradiates the 45-degree reflection surface of the first reflector with measurement light, reflects the measurement light on the 45-degree reflection surface, and the second reflector. The measurement light reflected by the parallel reflection surface and reflected again by the 45 degree reflection surface is received, and the parallelism between the first and second arrangement surfaces is adjusted based on the light reception position of the measurement light. A second adjustment step;
Moving the second placement surface relative to the first placement surface to a position where the second side reflection surface of the second reflector is irradiated with the measurement light; Irradiating the second side reflection surface of the second reflector with the measurement light, receiving the measurement light reflected by the second side reflection surface, and based on a light receiving position of the measurement light A third adjusting step for adjusting a twist of the second arrangement surface with respect to the first arrangement surface;
A first substrate carrying the first contact object is arranged on the first arrangement surface instead of the first reflector, and the second reflector is substituted on the second arrangement surface. A second arrangement step of arranging the second contact object;
A contact step of moving the second arrangement surface relative to the first arrangement surface to bring the contact surface of the first contact object into contact with the contact surface of the second contact object. Contact method. On the first arrangement surface on which the first contact object is arranged, the first side reflection surface perpendicular to the first arrangement surface and the first side reflection surface are inclined at 45 degrees. The first reflector having a 45-degree reflective surface is detachably disposed, and a second contact target that is provided facing the first layout surface and is joined to the first contact target is disposed. A second reflector having a parallel reflection surface parallel to the second arrangement surface and a second side reflection surface perpendicular to the second arrangement surface on the second arrangement surface; 1 placement step;
A first measurement is applied to the first side reflecting surface of the first reflector from a measuring device installed on the side of the first reflector, and the first side reflecting surface reflects the first measurement. A first adjustment step of receiving the first measurement light and adjusting an attitude of the measurement device based on a light receiving position of the first measurement light;
The second measuring light is irradiated from the measuring device onto the 45-degree reflecting surface of the first reflector in parallel with the first measuring light, reflected by the 45-degree reflecting surface, and the second reflector. The second measurement light reflected by the parallel reflection surface and reflected again by the 45-degree reflection surface is received, and the distance between the first and second arrangement surfaces is determined based on the light reception position of the second measurement light. A second adjustment step for adjusting the parallelism of
Relative to the first arrangement surface until the second arrangement surface is irradiated with the first or second measurement light on the second side reflection surface of the second reflector. The first measurement light is moved, irradiated with the first or second measurement light to the second side reflection surface of the second reflector from the measurement device, and reflected by the second side reflection surface. Or a third adjustment step of receiving the second measurement light and adjusting the twist of the second arrangement surface with respect to the first arrangement surface based on the light receiving position of the first or second measurement light;
A first substrate carrying the first contact object is arranged on the first arrangement surface instead of the first reflector, and the second reflector is substituted on the second arrangement surface. A second arrangement step of arranging the second contact object;
A contact step of moving the second arrangement surface relative to the first arrangement surface to bring the contact surface of the first contact object into contact with the contact surface of the second contact object. Contact method. In the contact step, the contact surface of the first contact object and the contact surface of the second contact object are brought into contact with each other, and the second disposition surface is separated from the first disposition surface. The contact method according to claim 1, 2, or 3 , wherein the first contact object is peeled off from the first substrate and transferred to the second contact object side. The contact step cleans the contact surface of the first contact object and the contact surface of the second contact object before the contact between the contact surfaces, and the contact surface of the first contact object The contact method according to claim 4 , wherein the contact surface and the contact surface of the second contact target are directly contacted and joined. The contact according to claim 1, 2, or 3 , wherein the first reflector and the first substrate in the first and second arrangement steps are arranged using an electrostatic chuck, a magnetic chuck, or a vacuum chuck. Method. First and second arrangement surfaces which are provided facing each other and are relatively movable in a predetermined direction;
45 degrees tilted at 45 degrees with respect to the first side reflection surface that is detachably provided on the first arrangement surface and perpendicular to the first arrangement surface. A first reflector having a reflective surface;
A second reflection which is detachably provided on the second arrangement surface, and has a parallel reflection surface parallel to the second arrangement surface and a second side reflection surface perpendicular to the second arrangement surface. Body,
The first and second measurement lights are disposed on the side of the first reflector and have an interval corresponding to the first side reflection surface and the 45 ° reflection surface of the first reflector. Then, the reflected first and second measurement lights are received, the parallelism between the first and second arrangement surfaces based on the light receiving positions of the first and second measurement lights, and the first And a measuring device that measures a twist in the θ direction of the second arrangement surface with respect to the arrangement surface.

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