JP5163731B2 - Defect candidate image display method - Google Patents

Description

  The present invention relates to a substrate manufacturing apparatus having a circuit pattern such as a semiconductor device or a liquid crystal, and more particularly to a technique for inspecting a pattern of a substrate being manufactured.

  Conventional optical or electron beam type pattern inspection apparatuses are described in Patent Document 1, Patent Document 2, and the like.

  FIG. 1 shows a configuration disclosed in Patent Document 1 as an example of an electron beam pattern inspection apparatus. The electron beam 2 from the electron beam source 1 is deflected in the X direction by the deflector 3, irradiated onto the object substrate 5 through the objective lens 4, and simultaneously moving the stage 6 continuously in the Y direction, 5 where secondary electrons and the like 7 from 5 are detected by the detector 8, and the detection signal is A / D converted by the A / D converter 9 to be a digital image, which can be expected to be essentially the same in the image processing circuit 10. Compared with the digital image, a place where there is a difference is detected as a pattern defect 11, and the defect position is determined.

  FIG. 2 shows the configuration of Patent Document 2 as an example of an optical inspection apparatus. The object substrate 5 is irradiated with light from the light source 21 via the objective lens 22, and reflected light at that time is detected by the image sensor 23. By repeating detection while moving the stage 6 at a constant speed, an image is detected as a detected image 24 and stored in the memory 25. Compared with the stored image 27 on the memory 25 which can be expected to be the same pattern as the detected image 24, if the same pattern is detected, it is detected as a normal part, and if the pattern is different, it is detected as a pattern defect 11 and the defect position is determined. It is.

  As an example, FIG. 3 shows a layout when the object substrate 5 is a wafer 31. Dies 32 are formed on the wafer 31 to be finally separated and become individual products of the same type. The stage 6 is moved along the scanning line 33 and an image of the stripe region 34 is detected. If the detection position A is currently 35, the image of the detection position B36 on the memory 25 is taken out as a stored image 27 and compared. This compares with the pattern which can be expected to be the same pattern. Here, the memory 25 has a capacity capable of holding an image that can be expected to have the same pattern, and configures an actual circuit by reusing it in a ring shape.

JP-A-5-258703 Japanese Patent Laid-Open No. 11-160247

  When checking the inspection results with any of the inspection devices, once the inspection results are output and the wafer is taken out, the wafer is mounted on a review station dedicated to defect confirmation, moved to the defect position, and an image of the location is displayed. By acquiring and observing the image visually, it was estimated whether it was a true defect or what was the cause. In these methods, it cannot be said that a huge amount of image information acquired at the time of inspection can be effectively utilized.

  An object of the present invention is to search for an image of a defective portion similar to an image of a defective portion designated based on the inspection result output by the inspection apparatus and the image data of the defective portion, and display the search result so that the search result can be identified. This is to make it possible to grasp the occurrence status of defects in a specific mode that occurred in the past.

  A first configuration according to the present invention for achieving the above object will be described. Here, a configuration using an electron beam is shown, but it is essentially the same as a configuration using other charged particles.

The configuration is shown in FIG. An electron beam source 1 that generates an electron beam 2, a deflector 3 that deflects the electron beam 2, an objective lens 4 that converges the electron beam 2 on the object substrate 5, and the object substrate 5 are held, scanned, or Originally based on the stage 6 for positioning, the detector 8 for detecting secondary electrons 7 from the object substrate 5, the A / D converter 9 for A / D converting the detection signal into a digital image, and the digital image An image processing circuit 10 that detects a place where there is a difference as a pattern defect 11 in comparison with a digital image at a place where it can be expected to be the same, and a defect that stores defect information 200 including the defect position of the pattern defect 11 and image information The information storage unit 201, the information output unit 203 that outputs the stored defect information 202, such as a network or a storage medium, and the information output unit 203 that outputs the information output to the information transmission unit 204. Selection for selecting a particular item of the input means 205, and the defect holding means 206, and a defect map 207 displaying the defect position information for holding the input defect information and defect map 207 inputs the defect information group on wafers Means 208, image display means 209 for displaying the image information of the selected defect information in an image format, search instruction means 210 for instructing a search for a defect image similar to the display image, and image information similar to the displayed image. The image search means 211 is configured to search for the held image.

  An electron beam 2 from an electron beam source 1 is irradiated onto an object substrate 5 through an objective lens 4, and secondary electrons 7 generated are detected by a detector 8. The deflector 3 deflects the electron beam 1 and scans the target substrate 5 on the stage 6 to obtain image information. The A / D converter 9 performs A / D conversion to obtain a digital image. The image processing circuit 10 compares it with a digital image at a place where it can be expected to be the same, and detects a place where there is a difference as a pattern defect 11. The defect information 200 including the defect position and image information of the detected pattern defect 11 is stored in the defect information storage unit 201, and the defect information 202 stored by the information output unit 203 is transferred to the information transmission unit such as a network or a storage medium as necessary. To 204.

Enter the defect information 200 of a plurality of wafers are output by the defect input means 205, and displays the defect position information among the input defect information in the defect map 20 7. Specific item defect map 207 in the selection means 20 8 displays the selected image information of the defect information in image format on the image display unit 20 9. A defect image similar to the display image to be indicated by the search instruction means 2 10 searches the image retrieval unit 21 1, to reflect the search result to the defect map 20 7. If necessary, see the search results by instructing the selection means 20 8. The display format of the defect map 20 7 can check the frequency of similar defect by displaying in chronological form shown in FIG. Thus, the image information acquired at the time of inspection can be used effectively.

  According to the present invention, an image of a defective portion similar to an image of a defective portion designated based on the inspection result output by the inspection apparatus and the image data of the defective portion is searched, and the search result is displayed so that it can be identified. It is possible to grasp the occurrence status of defects in a specific mode that occurred in the past, or to provide a function to issue an alarm for defects in a specific mode in the future by setting search conditions in the inspection device .

It is a front view which shows schematic structure of the conventional electron beam type pattern inspection apparatus. It is a front view which shows schematic structure of the conventional optical pattern inspection apparatus. It is a top view which shows the layout of a wafer. It is a block diagram which shows schematic structure of the solution means of this invention. It is a graph which shows the trend of the occurrence frequency of a defect. 1 is a block diagram showing an overall configuration of a pattern inspection system according to the present invention. It is a front view which shows schematic structure of the test | inspection apparatus by this invention. It is a front view of the display screen which shows an example of the display screen of the result confirmation apparatus by this invention.

  Hereinafter, embodiments of the present invention will be described with reference to specific drawings. The overall system will be described first, and then each part will be described.

(Overall system) The configuration of the first embodiment is shown in FIG. Inspects patterns such as SEM pattern inspection device, optical pattern inspection device, foreign matter inspection device, length measurement SEM, etc. for the server 151 for managing and storing various information arranged on the network 150 and the target substrate 5. A review device 154 for positioning the target substrate 5 at the point of failure indicated by receiving the inspection result from the inspection device A152, the inspection device B153, and the inspection device A or the inspection device B, And a result confirmation device 155 for receiving and confirming the inspection or measurement data at the time of the inspection. Each part operates as follows to satisfy its function.

That is, the object substrate 5 is loaded by the inspection apparatus A152 or the inspection apparatus B153, and the pattern inspection, foreign object inspection, or pattern dimension is measured. The image data of the defective part or the measurement part when inspecting and measuring is stored together with the measurement result, and the measurement result and the image data are output on the network 150. These data are temporarily stored in the server 151.

Transfer the information of the measurement result and the image data of a plurality of object substrate 5 that is stored in the server 151 to the result confirmation device 15 5, and displays the measurement result in the result confirmation device 155. Based on the display result, the image data of the defect portion similar to the image of the specific defect is searched by a method described later, and the search result is reflected on the display.

A first modification of the present embodiment will be described. That is, instead of executing the search by the result confirmation device 155 , the search can be executed by the inspection device A 152, the inspection device B 153, the server 151, or the review device 154.
(Inspection apparatus) FIG. 7 shows the configuration of an SEM pattern inspection apparatus. An electron beam source 1 for generating an electron beam 2 and an electron gun for accelerating the electron beam 2 from the electron beam source 1 with an electrode and creating a virtual light source (not shown) at a fixed place by an electrostatic or magnetic field superimposing lens; A blanking plate 104 for controlling the ON / OFF of the electron beam 2 and the electron beam 2 are placed in the X and Y directions by being placed in the vicinity of the position where the electron beam 2 from the virtual light source is converged to a fixed place by the condenser lens 60 and the electron gun. An electron optical system 64 composed of a deflector 105 that deflects the electron beam 2 and an objective lens 4 that converges the electron beam 2 on the target substrate 5, a sample chamber 107 that holds the wafer 31 that is the target substrate in a vacuum, and the wafer 31. A stage 6 mounted with a retarding voltage 108 that enables detection of an image at an arbitrary position, a detector 8 that detects secondary electrons 7 from the wafer 31 , and a detection signal detected by the detector 8. A / D converter 9 that obtains a digital image by A / D conversion, memory 109 that stores the digital image, and the stored image stored in memory 109 and the A / D converted digital image are compared, An image processing circuit 10 that detects a place where there is a difference as a pattern defect 11, and the coordinates, projection length, area, and limit threshold value DD of the pattern defect 11 (a defect is detected when the threshold value is less than this value) Threshold value), difference image average value, difference image variance, maximum image difference, defect image texture, reference image texture, defect portion image, pattern defect that stores defect information 200 such as a reference image having the same pattern as the defect portion Information storage means 201, information output means 203 that outputs information such as a network or a storage medium from the stored defect information 200, and an overall control unit 110 that controls the entire apparatus (overall control Control lines from the unit 110 are omitted in the figure), an operation screen 45 for performing various operations, a keyboard, a mouse and a knob (not shown) for instructing operations, and the height of the wafer 31 are measured to measure the objective lens. 4 is controlled by adding an offset 112 to the Z sensor 113 that keeps the focal position of the detected digital image constant, and a loader (not shown) that loads the wafer 31 in the cassette 114 into and out of the sample chamber 107. And an orientation flat detector (not shown) for positioning the wafer 31 with reference to the outer shape of the wafer 31, an optical microscope 118 for observing a pattern on the wafer 31, and a standard sample piece 119 provided on the stage 6 It becomes more.

The operation of the inspection apparatus will be described. That is, when the inspection is started by an instruction from the user, the stage 6 is moved and moved to the scanning start position of the area to be inspected on the mounted wafer 31. The offset 112 is set by adding an offset specific to the wafer measured in advance, the Z sensor 113 is enabled, the stage 6 is scanned in the Y direction along the scanning line 33 shown in FIG. 3, and is synchronized with the stage scanning. Then, the deflector 105 is scanned in the X direction, the voltage of the blanking plate 104 is turned off during the effective scanning, and the electron beam 2 is irradiated and scanned on the wafer 31. Reflected electrons or secondary electrons generated from the wafer 31 are detected by the detector 8, and a digital image of the stripe region 34 is obtained by the A / D converter 9 and stored in the memory 109 . After the scanning of the stage 6 is completed, the Z sensor 113 is invalidated.

By repeating the stage scanning, the entire necessary area is inspected. When the image processing circuit 10 detects the detection position A 35 (see FIG. 3), the pattern defect 11 is a place where there is a difference compared with the image of the detection position B 36 (see FIG. 3) stored in the memory 109. The extracted image at the detection position B 36 is stored in the memory 109. The coordinates of the extracted pattern defect 11, the projection length, the area, the threshold threshold DD (the threshold that is detected as a defect when the threshold is less than this value), the difference image average value, the difference image variance, and the maximum image The defect information 200 such as the difference, the defect image texture, the reference image texture, and the image information is stored in the defect information storage unit 201, and the defect information 200 stored by the information output unit 203 is stored in the network or Mo, CDR, DVD, if necessary. , Output to the information transmission means 204 which is a storage medium such as FD.
(Result confirmation device) The output defect information 200 is input via the network or from the storage medium by the input means 205 of the result confirmation device 155 , and the defect position information of the input defect information is displayed on the defect map 207. When a specific item of the defect map is selected by the selection unit 208, the image information of the defect information is displayed on the image display unit 209 in an image format. When instructed by the search instruction unit 210, a defect image similar to the display image is searched from the defect information group by the image search unit 211, and the search result is reflected in the defect map 207. If necessary, the search result can be confirmed by instructing the selection means 208. The frequency of occurrence of similar defects can be confirmed by displaying the display format on the defect map 207 in the time series format shown in FIG. Thus, the image information acquired at the time of inspection can be used effectively.

  An example of the display screen of the result confirmation apparatus 200 is shown in FIG. The map display unit 55 corresponding to the defect map 207 in FIG. 4 displays the position of each detected defect on the substrate (wafer).

  In addition, an image of a defect designated from the defects displayed on the map display unit is displayed on the image display unit 56 corresponding to the image display unit 209 of FIG. The designation of the defect for displaying the image is performed by operating the mouse operation instruction button 140. That is, the user wants to view the current position display 59 by moving the current position display 59 with the mouse (not shown) by selecting the selection mode or the zooming mode with the mouse operation instruction button 140 and displaying the current position display 59 on the screen. By clicking on the position of the defect, an image of the defect to be viewed is displayed on the image display unit 56.

  When the zooming mode is selected with the mouse operation instruction button 140, the display of the distribution of defects on the substrate on the map display unit 55 can be enlarged or reduced.

1 .... Electron beam source 2 .... Electron beam 3 .... Deflector 4 .... Objective lens 5 .... Substrate substrate 6..Stage 7 .... Secondary electron etc. 8 .... Detector 9 .... A / D conversion Device 10 Image processing circuit 11 Pattern defect candidate 21 Light source 22 Object lens 23 Image sensor 24 Detection image 25 Memory 27 Memory image 31 Wafer 32 Die 33 ..Scanning line 34 ..Stripe area 35 ..Detection position A 36 ..Detection position B 45 ..Operation screen 55 ..Map display part 56 ..Image display part 59 ..Current position 60. Electron optical system 101 Virtual light source 102 Electron gun 104 Blanking plate 105 Deflector 106 Sub optical system 107 ..Sample chamber 108 ..Retarding voltage 109 ..Memory 110 ..Overall control unit 111 ..Optimal offset 112 ..Offset 113 ..Z sensor 114 ..Cassette 116. Detector 118 .. Optical microscope 119 .. Standard specimen 120 .. Keyboard 121 .. Mouse 122 .. Knob 140 .. Mouse operation instruction button 141 .. Image switching button 143 .. Inspection start button 144. Button 150 ··· Network 151 ··· Server 152 ··· Inspection device A 153 ··· Inspection device B 154 · · Review device 155 · · Result confirmation device 200 · · Defect information 201 · · Defect information storage means ..Saved defect information 203 ..Defect information output means 204 ..Transmission means 205 ..Defect input means 206 ..Defect holding means 207 ..Defect map 208 ..Selection means 209. Means 211 .. Search means 220 .. All defects 221 .. Search defects

Claims (6)

An image display method for defect candidates,
A stage on which a substrate having a pattern formed thereon is scanned to sequentially irradiate a plurality of regions of the substrate surface with charged particles or light, and reflected light generated from the substrate by the irradiation, secondary electrons, reflected electrons, Detecting either transmitted electrons or absorbed electrons to obtain a plurality of images, and extracting a plurality of defect candidates on the substrate surface based on the plurality of images;
Storing the extracted images of the plurality of defect candidates on the substrate surface and information including the positions of the plurality of defect candidates on the substrate surface in a storage unit;
Displaying the position of a plurality of defect candidates on the stored substrate surface on a screen in a map format;
When one of the plurality of defect candidates on the substrate surface displayed in the map format is selected, the selected defect candidate from among the plurality of defect candidate images on the substrate surface stored in the storage means in advance. Reading the image of the defect candidate on the substrate surface corresponding to the step of displaying the image of the read defect candidate on the substrate surface together with the display in the map format;
A defect candidate image display method characterized by comprising: The defect candidate image display method according to claim 1,
When the threshold information for extracting the defect candidate on the substrate surface is changed on the screen, the position information of the defect candidate displayed in the map format is updated corresponding to the changed threshold information. An image display method for defect candidates, characterized in that the image is displayed. A defect candidate image display method according to claim 1 or 2,
In the step of displaying the positions of the plurality of defect candidates on the substrate surface in a map format on the screen, the information including the extracted images of the plurality of defect candidates on the substrate surface and the positions of the plurality of defect candidates on the substrate surface And classifying the plurality of defect candidates, identifying the positions of the plurality of classified defect candidates for each classification, and displaying them in a map format. The defect candidate image display method according to claim 3,
The defect candidate image display method characterized in that the information including the positions of a plurality of defect candidates on the substrate surface includes information capable of classifying defects. A defect candidate image display method according to any one of claims 1 to 4,
In the step of displaying an image of the read defect candidate on the substrate surface together with the display in the map format,
An image display method for defect candidates, characterized in that one of the selected defect candidates is displayed so as to be distinguished from other defect candidates in the display in the map format. A defect candidate image display method according to any one of claims 1 to 5,
In the step of extracting a plurality of defect candidates on the substrate surface,
By detecting any of reflected light, secondary electrons, reflected electrons, transmitted electrons, and absorbed electrons generated from the substrate by the irradiation, an image signal is obtained for each of a plurality of regions on the substrate surface, and the obtained plurality of An image display method of defect candidates, wherein the plurality of images are obtained by A / D converting each image signal.

Images