JP5154074B2 - 放射線検出器 - Google Patents
放射線検出器 Download PDFInfo
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- JP5154074B2 JP5154074B2 JP2006340321A JP2006340321A JP5154074B2 JP 5154074 B2 JP5154074 B2 JP 5154074B2 JP 2006340321 A JP2006340321 A JP 2006340321A JP 2006340321 A JP2006340321 A JP 2006340321A JP 5154074 B2 JP5154074 B2 JP 5154074B2
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- 230000005855 radiation Effects 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims description 37
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 207
- 239000010408 film Substances 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 229910001507 metal halide Inorganic materials 0.000 description 6
- 150000005309 metal halides Chemical class 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
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- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
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- 238000007740 vapor deposition Methods 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- -1 polyparaxylylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- 239000011435 rock Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
まず、本発明の第1実施形態に係る放射線検出器について説明する。
次に、本発明の第2実施形態に係る放射線検出器について説明する。
Claims (3)
- 放射線を検出するための放射線検出器であって、
基板、及び当該基板の一方の主面側に1次元又は2次元に配列された複数の画素電極を有する信号読出し基板と、
前記信号読出し基板の一方の主面側に形成された結晶性光導電層と、
前記結晶性光導電層の一方の主面に形成された導電性中間層と、
前記導電性中間層の一方の主面に形成された結晶性中間層と、
前記結晶性中間層の一方の主面に形成された共通電極と、を備え、
前記結晶性中間層の結晶粒径は、前記結晶性光導電層の結晶粒径よりも小さく、
前記導電性中間層の抵抗値は、前記結晶性光導電層及び前記結晶性中間層よりも低いことを特徴とする放射線検出器。 - 前記導電性中間層の少なくとも一部は、前記結晶性光導電層の結晶粒子間に入り込んでいることを特徴とする請求項1記載の放射線検出器。
- 前記導電性中間層は、ダイヤモンドライクカーボンを含むことを特徴とする請求項1又は2記載の放射線検出器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006340321A JP5154074B2 (ja) | 2006-12-18 | 2006-12-18 | 放射線検出器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006340321A JP5154074B2 (ja) | 2006-12-18 | 2006-12-18 | 放射線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008153460A JP2008153460A (ja) | 2008-07-03 |
JP5154074B2 true JP5154074B2 (ja) | 2013-02-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006340321A Expired - Fee Related JP5154074B2 (ja) | 2006-12-18 | 2006-12-18 | 放射線検出器 |
Country Status (1)
Country | Link |
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JP (1) | JP5154074B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013094099A1 (ja) * | 2011-12-19 | 2013-06-27 | 株式会社島津製作所 | 放射線検出器およびその製造方法 |
JPWO2022149401A1 (ja) * | 2021-01-06 | 2022-07-14 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4092825B2 (ja) * | 1999-09-30 | 2008-05-28 | 株式会社島津製作所 | アレイ型検出装置、およびその製造方法 |
JP2003209238A (ja) * | 2002-01-17 | 2003-07-25 | Toshiba Corp | X線検出器及びその製造方法 |
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2006
- 2006-12-18 JP JP2006340321A patent/JP5154074B2/ja not_active Expired - Fee Related
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