JP5145984B2 - Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the same - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus for performing a heat treatment on a semiconductor wafer and a manufacturing method of a semiconductor device using the same.

  Conventionally, a semiconductor manufacturing apparatus including a susceptor and a susceptor support shaft has been proposed in Patent Document 1, for example. Specifically, in Patent Document 1, a susceptor support shaft composed of a main shaft and three arms extending radially from the main shaft, a semiconductor wafer on one surface, and a susceptor support shaft on the other surface are arranged. A single wafer type semiconductor manufacturing apparatus including a susceptor to which each arm is connected has been proposed. The arm is connected to the peripheral edge of the other surface of the susceptor. The susceptor is disposed in the processing chamber and heated by a halogen lamp disposed outside the processing chamber.

In such an apparatus, since the protrusion of the susceptor support shaft is not disposed at the center of the other surface of the susceptor, the radiant heat of the halogen lamp disposed at the lower side of the processing chamber is not hindered by the susceptor support shaft at the center of the susceptor. It is like that.
JP 2000-124141 A

  However, in the above conventional technique, although one semiconductor wafer on the susceptor can be soaked, the following problems arise when the plurality of semiconductor wafers are arranged on the susceptor. It became clear.

  First, when a plurality of semiconductor wafers are arranged on one surface of a susceptor and light is irradiated on the other surface of the susceptor from a halogen lamp below the susceptor, an arm shadow is formed on the other surface of the susceptor. Even if the susceptor is rotated, the arm rotates with the susceptor, so that the shadow of the arm is always formed on the other surface of the susceptor. Therefore, there is a problem that the film thickness of the portion of the semiconductor wafer arranged on the one surface of the susceptor corresponding to the shadow of the arm is not increased due to the influence of the shadow.

  In addition, since a film forming gas flows in one direction in the processing chamber, there is a heat escape from the susceptor to the processing chamber side. Therefore, connecting the arm to the peripheral portion of the susceptor means that the susceptor is connected via the arm. Heat will also escape to the main shaft. Thereby, a heat distribution is formed in the outer diameter direction of the semiconductor wafer, and a heat distribution in the circumferential direction of the semiconductor wafer is formed in order to escape the heat around the susceptor where the arm is connected to the arm side, There is a problem that the film thickness becomes non-uniform.

  Furthermore, when the combined weight of the susceptor and the semiconductor wafer increases due to the recent increase in the size of the semiconductor wafer, it is necessary to increase the number of arms that support the susceptor or to increase the number of arms. Accordingly, there is a problem that heat escape through the arm is increased and the shadow of the arm appearing on the other surface of the susceptor is increased, so that the temperature of the susceptor is lowered and film formation is affected.

  SUMMARY OF THE INVENTION In view of the above, the present invention provides a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device using the same, in which a plurality of semiconductor wafers are placed on a susceptor and heat-treated when the semiconductor wafers are heat-treated. The purpose is to do.

  In order to achieve the above object, according to the invention described in claim 1, the semiconductor wafer is disposed in the processing chamber (10), has one surface (21) and the other surface (22), and a plurality of semiconductor wafers ( 60) on which the susceptor (20) is disposed, and a rod-shaped main shaft (31) which is located on the other surface (22) side of the susceptor (20) and extends in a direction perpendicular to the other surface (22) of the susceptor (20). ) And a plurality of arms (32) extending radially from the upper end (31a) on the susceptor (20) side of the main shaft (31) and connected to the other surface (22) of the susceptor (20). This is a semiconductor manufacturing apparatus having a shaft (30) having a halogen lamp (40) which is disposed outside the processing chamber (10) on the other surface (22) side of the susceptor (20) and serves as a heating source. Susceptor ( 0) in the direction perpendicular to the one surface (21), the upper end portion (31a) of the main shaft (31) and the arms (32) are separated from the semiconductor wafer (60), and the arms (32) A semiconductor wafer (60) is disposed therebetween.

According to this, each semiconductor wafer (60) can be prevented from being shaded by the arm (32). That is, since the arm (32) can be prevented from hindering the radiant heat of the halogen lamp (40), each semiconductor wafer (60) can be heated uniformly, and the film in the semiconductor wafer (60) can be heated. The thickness can be made uniform.
In addition, film thickness control and impurity concentration controllability in the film formation of the semiconductor wafer (60) can be improved. Furthermore, it is possible to prevent the occurrence of slip that causes stress in the semiconductor wafer (60) due to the non-uniform temperature of the semiconductor wafer (60).

  In the invention according to claim 2, the main shaft (31) has the rotation mechanism (50) at the lower end (31b) opposite to the upper end (31a), and the rotation mechanism (50) causes the main shaft ( The susceptor (20) can be rotated around the central axis of 31).

  As a result, the susceptor (20) rotates and the semiconductor is rotated even when there is a variation in the arrangement position of the halogen lamp (40) and a variation in the illuminance of the halogen lamp (40) with respect to the circumferential direction of the susceptor (20). The temperature distribution in the circumferential direction of the susceptor (20) in the wafer (60) can be eliminated.

  The invention according to claim 3 is characterized in that the number of semiconductor wafers (60) arranged on one surface (21) of the susceptor (20) and the number of arms (32) are the same.

  According to this, each semiconductor wafer (60) can be prevented from being shaded by the arm (32). That is, since the arm (32) can be prevented from hindering the radiant heat of the halogen lamp (40), each semiconductor wafer (60) can be heated uniformly, and the film in the semiconductor wafer (60) can be heated. The thickness can be made uniform. By setting the number of arms (32) to be the same as the number of semiconductor wafers (60), the number of arms (32) to be held without hindering radiant heat can be maximized. ) Can reduce the load of the susceptor (20), so that the thickness of the arm (32) can be reduced. Therefore, since the escape of heat from the portion where the arm (32) holds the susceptor (20) can be reduced, soaking can be further achieved.

  In the invention according to claim 4, the number of halogen lamps (40) arranged on the other surface (22) side of the susceptor (20) and the semiconductor wafer (60) arranged on one surface (21) of the susceptor (20). ) And the number of arms (32) are the same.

  Thereby, on the other surface (22) side of the susceptor (20) where the shadow of the arm (32) can be formed, the relationship among the semiconductor wafer (60), the arm (32), and the halogen lamp (40) is determined for all the semiconductor wafers (60). ), All semiconductor wafers (60) can be uniformly heat-treated.

  In the invention according to claim 5, the connection point (23) between the other surface (22) of the susceptor (20) and the arm (32) is most distant from the central axis of the main shaft (31) of the semiconductor wafer (60). It is characterized by being located closer to the central axis of the main shaft (31) than the distant position.

  Thereby, the connection point (23) of an arm (32) can be provided in the place away from the outer peripheral part of the susceptor (20) with large escape of heat to the processing chamber (10) side. Therefore, it is possible not to create a new heat escape path to the outer peripheral side of the susceptor (20), and to equalize the temperature of the semiconductor wafer (60).

  In the invention according to claim 6, in the surface direction of the one surface (21) of the susceptor (20), the shortest distance between the side surface of the semiconductor wafer (60) and the side surface of the susceptor (20) is b, and the semiconductor wafer (60). When the shortest distance between the side surface and the connection point (23) is c, the condition of c> b is satisfied.

  Thereby, the main escape route of heat of the susceptor (20) can be limited to the outer peripheral portion of the susceptor (20). That is, it is possible to make it difficult for heat to escape to the arm (32) side via the connection point (23) of the arm (32), so that the semiconductor wafer (60) can be uniformly heated.

  In the invention according to claim 7, the susceptor is disposed in the processing chamber (10), has one surface (21) and the other surface (22), and a plurality of semiconductor wafers (60) are disposed on the one surface (21). (20), a rod-shaped main shaft (31) that is positioned on the other surface (22) side of the susceptor (20) and extends in a direction perpendicular to the other surface (22) of the susceptor (20), and the main shaft ( 31) a shaft (30) having a plurality of arms (32) extending radially from the upper end (31a) of the susceptor (20) and connected to the other surface (22) of the susceptor (20); 22) side, outside the processing chamber (10), the halogen lamp (40) serving as a heating source, and the central axis of the main shaft (31) at the lower end (31b) of the main shaft (31) Centered susceptor (2 ) And a rotation mechanism (50) for rotating the semiconductor wafer, the number of semiconductor wafers (60) and the number of arms (32) are the same, and the semiconductor is centered on the central axis of the main shaft (31). The wafer (60) and the arm (32) are arranged so as to be rotationally symmetric.

  Thereby, since the relationship between the semiconductor wafer (60) and the arm (32) can be rotationally symmetric with respect to all the semiconductor wafers (60), the semiconductor wafer (60) can be heat-treated symmetrically. Further, even if the other surface (22) of the susceptor (20) is covered with the arm (32), the rotation of the susceptor (20) causes a shortage of heat in a portion where the light from the halogen lamp (40) is difficult to reach. The semiconductor wafer (60) can be heat-treated relatively uniformly.

  Further, as in the invention described in claim 8, the number of halogen lamps (40) disposed on the other surface (22) side of the susceptor (20) and the one surface (21) of the susceptor (20). The number of semiconductor wafers (60) is the same as the number of arms (32), and the semiconductor wafer (60), arms (32), halogen lamp (40), and the like are centered on the central axis of the main shaft (31). Can be arranged so as to be rotationally symmetric.

  This further improves the symmetry of the semiconductor wafer (60), the arm (32), and the halogen lamp (40) on the other surface (22) side of the susceptor (20) where the shadow of the arm (32) is shaded. it can.

  In the invention according to claim 9, the susceptor is disposed in the processing chamber (10), has one surface (21) and the other surface (22), and a plurality of semiconductor wafers (60) are disposed on the one surface (21). (20), a rod-shaped main shaft (31) that is positioned on the other surface (22) side of the susceptor (20) and extends in a direction perpendicular to the other surface (22) of the susceptor (20), and the main shaft ( 31) a shaft (30) having a plurality of arms (32) extending radially from the upper end (31a) of the susceptor (20) and connected to the other surface (22) of the susceptor (20); 22) is a semiconductor manufacturing apparatus having a halogen lamp (40) which is disposed outside the processing chamber (10) and serves as a heating source, and is provided with the other surface (22) of the susceptor (20) and an arm ( 32) connection point (23 There, characterized in that located on the center axis side of the main shaft (31) than the most distant position from the center axis of the main shaft (31) of the semiconductor wafer (60).

  In this way, the connection point (23) of the arm (32) serving as a heat escape passage is provided at a location different from the outer periphery of the susceptor (20) where heat escape to the processing chamber (10) is large. By avoiding new heat escape from the outer periphery of the susceptor (20), the semiconductor wafer (60) can be uniformly heated.

  In the invention described in claim 10, the number of semiconductor wafers (60) arranged on one surface (21) of the susceptor (20) and the number of arms (32) are the same, and the central axis of the main shaft (31) The semiconductor wafer (60) and the arm (32) are arranged so as to be rotationally symmetric with respect to each other.

  Thereby, since the relationship between the semiconductor wafer (60) and the arm (32) can be rotationally symmetric with respect to all the semiconductor wafers (60), the semiconductor wafer (60) can be heat-treated symmetrically.

  In the invention according to claim 11, the number of halogen lamps (40) arranged on the other surface (22) side of the susceptor (20) and the semiconductor wafer (60) arranged on one surface (21) of the susceptor (20). ) And the number of arms (32) are the same, and the semiconductor wafer (60), the arm (32), and the halogen lamp (40) are rotationally symmetric about the central axis of the main shaft (31). It arrange | positions so that it may become.

  Thereby, the symmetry of the semiconductor wafer (60), the arm (32), and the halogen lamp (40) can be further improved.

  In the invention described in claim 12, the connecting portion between the surface (32a) of the arm (32) parallel to the central axis of the main shaft (31) and the side surface (31c) of the main shaft (31) is chamfered. It is characterized by being.

  According to this, since the connection part of the arm (32) with respect to the main shaft (31) becomes thick, the stress which arises in the said connection part can be reduced. Accordingly, the arm (32) for supporting the load of the susceptor (20) can be made thinner. Thereby, the area of the arm (32) which blocks the light of the halogen lamp (40) can be reduced, and the semiconductor wafer (60) can be more uniformly heated.

  Although the semiconductor manufacturing apparatus has been described above, the semiconductor wafer (60) can be heat-treated using the semiconductor manufacturing apparatus. That is, during the heat treatment, the semiconductor wafer (60) can be uniformly heated using the above-described apparatus, so that the film can be uniformly formed on the semiconductor wafer (60).

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The semiconductor manufacturing apparatus shown in the present embodiment is used for forming an epitaxial film or the like on a semiconductor wafer, for example.

  FIG. 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus according to the first embodiment of the present invention. As shown in this figure, the semiconductor manufacturing apparatus includes a processing chamber 10, a susceptor 20, a shaft 30, a halogen lamp 40, and a rotation mechanism 50.

  The processing chamber 10 includes a processing chamber 11 that is decompressed from atmospheric pressure and into which a film forming gas is injected, and heats the semiconductor wafer 60 in the processing chamber 11. Specifically, the processing chamber 10 includes quartz domes 12 and 13 and cooling chambers 14 and 15.

  The quartz domes 12 and 13 are composed of quartz windows 12a and 13a and flange portions 12b and 13b. The quartz windows 12 a and 13 a are containers that are arranged so as to form a part of the boundary of the processing chamber 11 and are convex outward from the processing chamber 11. The flange portions 12b and 13b are provided at the opening end portions of the quartz windows 12a and 13a. The cooling chambers 14 and 15 restrain the flange portions 12b and 13b of the quartz domes 12 and 13 through O-rings 16 and 17 and have a structure in which cooling water flows inside.

  Two of the quartz domes 12 and 13 are prepared by fixing the cooling chambers 14 and 15 to the flange portions 12b and 13b of the quartz domes 12 and 13 via O-rings 16 and 17, respectively. The recesses face each other, and the cooling chambers 14 and 15 are joined to constitute the processing chamber 10. Thus, the space closed by the quartz domes 12 and 13, the O-rings 16 and 17, and the cooling chambers 14 and 15 becomes the processing chamber 11.

  The susceptor 20 is a disk-shaped table having one surface 21 and another surface 22, and a plurality of semiconductor wafers 60 are disposed on the one surface 21.

  The shaft 30 supports the susceptor 20 and places the susceptor 20 in the processing chamber 10, and includes a main shaft 31 and a plurality of arms 32.

  The main shaft 31 is a rod-shaped member that is located on the other surface 22 side of the susceptor 20 and extends in a direction perpendicular to the other surface 22 of the susceptor 20. The susceptor 20 is disposed on the upper end portion 31a side of the main shaft 31 on the susceptor 20 side, and a lower end portion 31b opposite to the upper end portion 31a is provided in the rotation mechanism 50.

  As shown in FIG. 1, the main shaft 31 is inserted into a main shaft through portion 13c provided in the quartz window 13a. Thus, the upper end portion 31 a of the main shaft 31 is disposed in the processing chamber 11, and the lower end portion 31 b is disposed outside the processing chamber 11.

  The arm 32 is a member that extends radially from the upper end portion 31 a of the main shaft 31 and is connected to the other surface 22 of the susceptor 20 to support the susceptor 20. In the present embodiment, five arms 32 are provided on the main shaft 31, and the susceptor 20 is supported by the five arms 32. In FIG. 1, only one arm 32 is shown.

  FIG. 2 is a partial perspective view of a connection portion between the upper end portion 31 a of the main shaft 31 and the arm 32. As shown in this figure, a connecting portion between a surface 32 a of the arm 32 parallel to the central axis of the main shaft 31 and a side surface 31 c of the main shaft 31 is chamfered.

  According to this, as shown by the broken line in FIG. 2, the connecting portion of the arm 32 to the main shaft 31 is made thicker than the case where the surface 32a of the arm 32 and the side surface 31c of the main shaft 31 intersect at a substantially right angle. It is possible to reduce the stress generated in the connection portion. That is, even if the arm 32 is made thin, the arm 32 can withstand the load of the susceptor 20.

  The thickness of the arm 32 is made 20% thinner than the arm 32 when the surface 32a of the arm 32 and the side surface 31c of the main shaft 31 intersect at a substantially right angle depending on the shape of the connecting portion between the arm 32 and the main shaft 31. Can do. That is, the area of the arm 32 that blocks the light of the halogen lamp 40 can be reduced, and as a result, the semiconductor wafer 60 can be more uniformly heated.

  In FIG. 2, only one connecting portion between the arm 32 and the main shaft 31 is shown, but in practice, all the connecting portions are chamfered.

  Further, the halogen lamps 40 shown in FIG. 1 are heating sources that emit radiant heat, and a plurality of halogen lamps 40 are arranged outside the processing chamber 10. Specifically, the halogen lamp 40 is disposed at a location facing each of the quartz windows 12a and 13a, and illuminates and heats one surface 21 and the other surface 22 of the susceptor 20.

  The rotation mechanism 50 supports the lower end portion 31b of the main shaft 31 and rotates the main shaft 31 around the central axis of the main shaft 31, and is a well-known one having a motor and the like. When the main shaft 31 is rotated by the rotating mechanism 50, the arm 32 is also rotated in conjunction with the main shaft 31, and the susceptor 20 supported by the arm 32 is also rotated.

  By rotating the susceptor 20 by the rotation mechanism 50, even if there is a variation in the arrangement position of the halogen lamp 40 or a variation in the illuminance of the halogen lamp 40 with respect to the circumferential direction of the susceptor 20, The temperature distribution in the circumferential direction can be eliminated.

  The above is the overall configuration of the semiconductor manufacturing apparatus according to the present embodiment. In this semiconductor manufacturing apparatus, the illuminance of the halogen lamp 40, the rotation speed of the rotation mechanism 50, the injection of the film forming gas into the processing chamber 11, the control of the cooling water in the cooling chambers 14 and 15, and the like are performed by a control device not shown. .

  Next, the relationship between the semiconductor wafer 60 disposed on the one surface 21 of the susceptor 20 and the shaft 30 in the above apparatus will be described. FIG. 3 is a plan view of one surface 21 of the susceptor 20 as viewed from the side where the semiconductor wafer 60 is disposed.

  First, as shown in the plan view of FIG. 3, the upper end portion 31 a and each arm 32 of the main shaft 31 and the semiconductor wafer 60 are separated from each other in the direction perpendicular to the one surface 21 of the susceptor 20 and each arm 32. A semiconductor wafer 60 is disposed between the two.

  Due to such an arrangement relationship, each semiconductor wafer 60 is not shaded by the upper end portion 31 a of the main shaft 31 or the arm 32 when viewed from the lower halogen lamp 40. That is, since the upper end portion 31a and the arm 32 of the main shaft 31 do not hinder the radiant heat of the halogen lamp 40 with respect to the semiconductor wafer 60, each semiconductor wafer 60 is heated uniformly.

  Further, in a state where the semiconductor wafer 60 is disposed on the one surface 21 of the susceptor 20, the connection point 23 between the other surface 22 of the susceptor 20 and the arm 32 is a position farthest from the central axis of the main shaft 31 in the semiconductor wafer 60. It is desirable to be located closer to the center axis side of the main shaft 30 than.

  The reason for defining the position of the connection point 23 in this way is to limit the route of heat escape of the susceptor 20. The heat of the susceptor 20 heated by the halogen lamp 40 escapes from the susceptor 20 to the cooling chambers 14 and 15 side. The heat of the susceptor 20 escapes to the main shaft 31 via the arm 32 via the connection point 23 between the other surface 22 of the susceptor 20 and the arm 32. If the two paths for such heat escape are close to each other, heat escapes from the two paths, so that the temperature near the two paths is lower than the surroundings. In order to avoid this, by defining the position of the connection point 23 that forms part of the path through which heat escapes, a new heat escape path to the outer periphery of the susceptor 20 is prevented. In this way, the temperature of the semiconductor wafer 60 is equalized so that no temperature distribution is formed in the outer diameter direction of the susceptor 20.

  Further, in a state where the semiconductor wafer 60 is disposed on the one surface 21 of the susceptor 20, the shortest distance between the side surface of the semiconductor wafer 60 and the side surface of the susceptor 20 in the surface direction of the one surface 21 of the susceptor 20 is b. When the shortest distance between the side surface and the connection point 23 is c, the semiconductor wafer 60 is arranged on the susceptor 20 so as to satisfy the condition of c> b. By defining in this way, the main escape route of heat of the susceptor 20 is limited to the outer peripheral portion of the susceptor 20, and it is difficult for the heat to escape to the arm 32 side via the connection point 23 of the arm 32. As a result, the design can be limited to heat escape to the outer peripheral portion, and the design is simplified.

  In this embodiment, the number of halogen lamps 40 disposed on the other surface 22 side of the susceptor 20, the number of semiconductor wafers 60 disposed on the one surface 21 of the susceptor 20, and the number of arms 32 are the same. . As described above, the number of halogen lamps 40 arranged on the other surface 22 side of the susceptor 20 defines the number of halogen lamps 40 on the other surface 22 side of the susceptor 20 where the shadow of the arm 32 can be shaded. This is because the relationship between the semiconductor wafers 60 and 40 is symmetrical with respect to all the semiconductor wafers 60 so that the temperature does not vary among the semiconductor wafers 60. On the one surface 21 side of the susceptor 20, this effect is effective even when the halogen lamp 40 is not disposed. In the present embodiment, the halogen lamp 40 is also disposed on the one surface 21 side of the susceptor 20.

  FIG. 4 is a plan view showing the positional relationship among the semiconductor wafer 60, the arm 32, and the halogen lamp 40, and corresponds to FIG. As shown in this figure, the semiconductor wafer 60 is disposed on one surface 21 of the susceptor 20, and when the susceptor 20 is stopped, each halogen lamp 40 and the semiconductor wafer in a direction perpendicular to the one surface of the susceptor 20. The halogen lamp 40 is arranged so as to overlap with 60. This is because halogen lamps 40 are arranged outside the processing chamber 10 in both directions of the one surface 21 side and the other surface 22 side of the susceptor 20.

  According to this, the relationship among the semiconductor wafer 60, the arm 32, and the halogen lamp 40 is symmetric with respect to all the semiconductor wafers 60, and it becomes possible to uniformly heat treat all the semiconductor wafers 60.

  Next, a process of performing a heat treatment on the semiconductor wafer 60 based on the positional relationship between the apparatus and the susceptor 20 and the semiconductor wafer 60 will be described.

  First, in a state where the processing chamber 10 is opened, the semiconductor wafer 60 is arranged on the one surface 21 of the susceptor 20 so as to have the arrangement relationship shown in FIGS. Subsequently, the processing chamber 10 is closed so that the processing chamber 11 is isolated from the outside of the processing chamber 10.

  Thereafter, the processing chamber 11 is depressurized from the atmospheric pressure to a vacuum state, and a film forming gas is poured into the processing chamber 11. In addition, the inside of the processing chamber 10 is heated by the halogen lamp 40 and the rotation mechanism 50 is driven to rotate the susceptor 20. In this state, a film forming gas (for example, dichlorosilane) is introduced into the processing chamber 10. Thereby, a film is formed on the semiconductor wafer 60.

  The inventors have grown an epitaxial film on the semiconductor wafer 60 and examined the film thickness. The results are shown in FIG. 5 and FIG. Here, as shown in FIG. 7, the outer diameter direction of the susceptor 20 in the semiconductor wafer 60 is defined as the + Y direction, and the direction in which the semiconductor wafer 60 is rotated in the clockwise direction in the direction perpendicular to the + Y direction is defined as the + X direction. Yes.

  5 and 6, in the direction perpendicular to one surface of the susceptor 20, “▲” indicates that the arm 32 overlaps the semiconductor wafer 60 and the position of the connection point 23 is arranged on the outer peripheral side of the susceptor 20. In the second case where the arm 32 overlaps the semiconductor wafer 60 and the position of the connection point 23 is arranged at the center of the semiconductor wafer 60, “♦” indicates that the arm 32 does not overlap the semiconductor wafer 60. 3 shows a case of the present embodiment in which the arrangement relationship 3 is satisfied.

  In the first case, as shown in FIG. 5, since the heat escape in the outer diameter direction of the susceptor 20 affects, the film thickness is smaller in the + Y direction (outer peripheral side of the susceptor 20) than in the + Y direction. It has become. Similarly, as shown in FIG. 6, the film thickness is small at the center of the semiconductor wafer 60 in the X direction.

  In the second case, as shown in FIG. 5, although the film thickness is not reduced in the Y direction, the connection point is located at the center of the semiconductor wafer 60, so that the connection point 23 is As shown in FIG. 6, a slight film thickness reduction is observed at the central portion of the semiconductor wafer 60 due to heat escape. There is also an effect that the central portion of the semiconductor wafer 60 is covered with the arm 32.

  However, in the case of the present embodiment, the arm 32 does not cover the surface of the semiconductor wafer 60, that is, does not become a shadow of the semiconductor wafer 60, so that the film thickness distribution is uniform as shown in FIGS. 5 and 6. ing. Further, since the heat escape paths are dispersed, it can be said that the semiconductor wafer 60 is uniformly heated and the film thickness is uniform. From these results as well, it can be seen that the semiconductor wafer 60 is separated from the arm 32 and the position of the connection point 23 is defined, so that the semiconductor wafer 60 can be heated so that a uniform film can be formed.

  In this case, by rotating the susceptor 20 by the rotation mechanism 50, the temperature distribution in the circumferential direction of the susceptor 20 in the semiconductor wafer 60 can be eliminated. Also by this, the soaking of the semiconductor wafer 60 can be achieved.

  In addition to forming a uniform film, it is possible to improve film thickness control and impurity concentration controllability in the formation of the semiconductor wafer 60. Further, since the temperature of the semiconductor wafer 60 can be equalized, it is possible to prevent the occurrence of slip that causes stress in the semiconductor wafer 60 due to non-uniform temperature of the semiconductor wafer 60.

  As described above, in the present embodiment, the upper end portion 31a of the main shaft 31 and each arm 32 and the semiconductor wafer 60 are separated from each other in the direction perpendicular to the one surface 21 of the susceptor 20 and between the arms 32. The semiconductor wafer 60 is arranged on the surface.

  Thereby, each semiconductor wafer 60 can be prevented from being shaded by the arm 32, and the arm 32 can be prevented from hindering the radiant heat of the halogen lamp 40. Therefore, each semiconductor wafer 60 can be heated uniformly.

  Further, by regulating the positional relationship between the semiconductor wafer 60 and the arm 32 and the position of the connection point 23 between the susceptor 20 and the arm 32, the temperature uniformity of the semiconductor wafer 60 can be achieved.

(Second Embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In the first embodiment, the arm 32 and the semiconductor wafer 60 are separated from each other in the direction perpendicular to the one surface 21 of the susceptor 20, and the semiconductor wafer 60 is disposed between the arms 32. The semiconductor wafer 60 and the arms 32 are the same in number, and the semiconductor wafer 60 and the arms 32 are arranged so as to be rotationally symmetric about the central axis of the main shaft 31.

  That is, if the semiconductor wafer 60 and the arm 32 are arranged so as to be rotationally symmetric, the arm 32 and the semiconductor wafer 60 may not be separated from each other in a direction perpendicular to the one surface 21 of the susceptor 20. The semiconductor wafer 60 may not be disposed between the arms 32. Further, the condition of c> b may not be satisfied. The apparatus shown in FIG. 1 is employed.

  FIG. 8 is a plan view when the semiconductor wafer 60 is disposed on the susceptor 20 in the present embodiment, and corresponds to FIG. FIG. 8A is a plan view seen from one surface 21 of the susceptor 20. FIG. 8B is a plan view of the other surface 22 of the susceptor 20 as viewed from the lower halogen lamp 40 side. As shown in FIG. 8A, the semiconductor wafer 60 and the arm 32 are arranged so as to be rotationally symmetric with respect to the central axis of the main shaft 31. Further, the arm 32 and the semiconductor wafer 60 overlap in a direction perpendicular to the one surface 21 of the susceptor 20.

  The number of halogen lamps 40 disposed on the other surface 22 side of the susceptor 20 is also the same as the number of semiconductor wafers 60 and the number of arms 32 disposed on the one surface 21 of the susceptor 20. As shown in FIG. 8B, the semiconductor wafer 60, the arm 32, and the halogen lamp 40 are arranged so as to be rotationally symmetrical.

  When an epitaxial film is grown on the semiconductor wafer 60 by such an arrangement relationship, the film thickness is represented by “□” in FIGS. 5 and 6. Even in this case, by rotating the susceptor 20 by the rotation mechanism 50, each semiconductor wafer 60 can be heated in the same manner, and further, each semiconductor wafer 60 can be soaked. The film thickness can be made more uniform than in the case of “▲”.

  Moreover, even if the other surface 22 of the susceptor 20 is shaded by the arm 32, the rotation of the susceptor 20 allows the heat of the halogen lamp 40 to reach a portion where the light of the halogen lamp 40 is difficult to reach. Thereby, the shortage of heat in the shadowed portion is compensated for by the arm 32, and the temperature distribution in the semiconductor wafer 60 is avoided, and the temperature uniformity in the semiconductor wafer 60 is achieved. As a result, as shown in FIG. 5, a decrease in the film thickness in the + Y direction of the semiconductor wafer 60 is avoided.

  As described above, by arranging the relationship between the semiconductor wafer 60 and the arm 32 so as to be rotationally symmetric with respect to all the semiconductor wafers 60, it becomes possible to heat-treat each semiconductor wafer 60 symmetrically. Further, the same number of halogen lamps 40 as the arms 32 and the semiconductor wafers 60 are provided, and they are arranged rotationally symmetrically, so that the symmetry of the semiconductor wafer 60, the arms 32, and the halogen lamps 40 can be further improved. It becomes.

(Third embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In the present embodiment, of the arrangement relationship between the semiconductor wafer 60 and the arm 32 in the first embodiment, the connection point 23 between the other surface 22 of the susceptor 20 and the arm 32 is the central axis of the main shaft 31 in the semiconductor wafer 60. It is characterized in that it only defines that it is positioned closer to the central axis of the main shaft 30 than the position farthest from the center.

  That is, the arm 32 and the semiconductor wafer 60 may not be separated from each other in the direction perpendicular to the one surface 21 of the susceptor 20, and the semiconductor wafer 60 may not be disposed between the arms 32. Of course, the condition of c> b may not be satisfied. The apparatus shown in FIG. 1 is employed.

  The positional relationship between the arm 32 and the semiconductor wafer 60 in this embodiment is the same as that shown in FIG. 8, for example. With this arrangement relationship, a new heat escape path is not formed in the heat path that escapes from the susceptor 20 to the processing chamber 10, so that no heat distribution is formed on the semiconductor wafer 60.

  In the present embodiment, the number of the semiconductor wafers 60 and the arms 32 is the same. The semiconductor wafer 60 and the arm 32 are arranged so as to be rotationally symmetrical about the central axis of the main shaft 31.

  Further, as shown in FIG. 8B, when the halogen lamps 40 are arranged on the other surface 22 side of the susceptor 20, the number of the halogen lamps 40 is equal to the number of semiconductor wafers 60 arranged on the one surface 21 of the susceptor 20. The number of the arms 32 is the same as the number of the arms 32, and the semiconductor wafer 60, the arms 32, and the halogen lamps 40 are rotationally symmetrically arranged around the central axis of the main shaft 31.

  As a result, the relationship between the semiconductor wafer 60, the arm 32, and the halogen lamp 40 is rotationally symmetric with respect to all the semiconductor wafers 60, and each semiconductor wafer 60 can be subjected to heat equalization and heat treatment.

  As described above, the temperature equalization of the semiconductor wafer 60 can be achieved only by defining the position of the connection point 23 between the susceptor 20 and the arm 32 so as not to make a new heat escape in the outer peripheral portion of the susceptor 20. Can be achieved.

(Other embodiments)
The configuration of the apparatus shown in FIG. 1 is an example, and is not limited to the configuration. For example, the processing chamber 10 may be configured by other shapes or other parts.

  In each of the above-described embodiments, five semiconductor wafers 60, five arms 32, and five halogen lamps 40 are shown as examples, but the number is not limited to these, and other numbers may be used. It does not matter. In this case, for example, in the first embodiment, the number of arms 32 and the number of semiconductor wafers 60 do not have to be the same. For example, three semiconductor wafers 60 are arranged on the susceptor 20 with respect to five arms 32. Even in this case, the arrangement conditions defined in the first embodiment can be satisfied.

  In the first embodiment, it has been described that the number of halogen lamps 40, the number of semiconductor wafers 60, and the number of arms 32 are the same. However, the halogen lamps 40 are arranged on one surface 21 of the susceptor 20 regardless of the number of halogen lamps 40. The number of semiconductor wafers 60 and the number of arms 32 may be the same. Even in this case, each semiconductor wafer 60 can be prevented from being shaded by the arm 32, and the arm 32 can be prevented from hindering the radiant heat of the halogen lamp 40, so that each semiconductor wafer 60 is made uniform. The film thickness in the semiconductor wafer 60 can be made uniform.

1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. It is a partial perspective view of the connection part of the upper end part of a main shaft and an arm. It is the top view which looked at one surface of the susceptor from the side by which a semiconductor wafer is arrange | positioned. It is the top view which showed the positional relationship of a semiconductor wafer, an arm, and a halogen lamp. It is the figure which showed the film thickness of the epitaxial film of a Y direction in a semiconductor wafer. It is the figure which showed the film thickness of the epitaxial film of a X direction in a semiconductor wafer. It is the figure which prescribed | regulated the X direction and the Y direction in the semiconductor wafer. In 2nd Embodiment of this invention, it is a top view when a semiconductor wafer is arrange | positioned to a susceptor.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Processing chamber 20 Susceptor 21 One surface of semiconductor wafer 22 Other surface of semiconductor wafer 23 Connection point 30 Shaft 31 Main shaft 31a Upper end portion of main shaft 31b Lower end portion of main shaft 31c Side surface of main shaft 32 Arm 32a Arm surface 40 Halogen lamp 50 Rotating mechanism 60 Semiconductor wafer

Claims (13)

A susceptor (20) disposed in the processing chamber (10), having one surface (21) and the other surface (22), wherein a plurality of semiconductor wafers (60) are disposed on the one surface (21);
A rod-shaped main shaft (31) located on the other surface (22) side of the susceptor (20) and extending in a direction perpendicular to the other surface (22) of the susceptor (20), and a main shaft (31) A shaft (30) having a plurality of arms (32) extending radially from an upper end (31a) on the susceptor (20) side and connected to the other surface (22) of the susceptor (20);
A semiconductor manufacturing apparatus having a halogen lamp (40) on the other surface (22) side of the susceptor (20) and disposed outside the processing chamber (10) and serving as a heating source;
In the direction perpendicular to the one surface (21) of the susceptor (20), the upper end portion (31a) of the main shaft (31) and the arms (32) are separated from the semiconductor wafer (60), and A semiconductor manufacturing apparatus, wherein the semiconductor wafer (60) is disposed between the arms (32).   The main shaft (31) has a rotation mechanism (50) at a lower end (31b) opposite to the upper end (31a), and the rotation mechanism (50) causes a central axis of the main shaft (31) to be provided. The semiconductor manufacturing apparatus according to claim 1, wherein the susceptor (20) is rotated around the center of the susceptor (20).   3. The semiconductor according to claim 1, wherein the number of the semiconductor wafers (60) arranged on one surface (21) of the susceptor (20) and the number of the arms (32) are the same. manufacturing device.   The number of halogen lamps (40) disposed on the other surface (22) side of the susceptor (20), the number of semiconductor wafers (60) disposed on one surface (21) of the susceptor (20), and 4. The semiconductor manufacturing apparatus according to claim 1, wherein the number of the arms is the same.   The connection point (23) between the other surface (22) of the susceptor (20) and the arm (32) is located farthest from the central axis of the main shaft (31) in the semiconductor wafer (60). The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is located on a central axis side of the main shaft (31).   In the surface direction of the one surface (21) of the susceptor (20), the shortest distance between the side surface of the semiconductor wafer (60) and the side surface of the susceptor (20) is b, and the side surface of the semiconductor wafer (60) and the connection The semiconductor manufacturing apparatus according to claim 5, wherein the condition of c> b is satisfied, where c is the shortest distance from the point (23). A susceptor (20) disposed in the processing chamber (10), having one surface (21) and the other surface (22), wherein a plurality of semiconductor wafers (60) are disposed on the one surface (21);
A rod-shaped main shaft (31) located on the other surface (22) side of the susceptor (20) and extending in a direction perpendicular to the other surface (22) of the susceptor (20), and a main shaft (31) A shaft (30) having a plurality of arms (32) extending radially from the upper end (31a) and connected to the other surface (22) of the susceptor (20);
A halogen lamp (40) on the other surface (22) side of the susceptor (20), disposed outside the processing chamber (10) and serving as a heating source;
A semiconductor manufacturing apparatus having a rotation mechanism (50) for rotating the susceptor (20) about a central axis of the main shaft (31) at a lower end (31b) of the main shaft (31),
The number of the semiconductor wafer (60) and the arm (32) is the same, and the semiconductor wafer (60) and the arm (32) are rotationally symmetric about the central axis of the main shaft (31). The semiconductor manufacturing apparatus is arranged so as to be.   The number of halogen lamps (40) disposed on the other surface (22) side of the susceptor (20), the number of semiconductor wafers (60) disposed on one surface (21) of the susceptor (20), and The number of the arms (32) is the same, and the semiconductor wafer (60), the arms (32), and the halogen lamp (40) are rotationally symmetric about the central axis of the main shaft (31). The semiconductor manufacturing apparatus according to claim 7, wherein the semiconductor manufacturing apparatus is arranged as follows. A susceptor (20) disposed in the processing chamber (10), having one surface (21) and the other surface (22), wherein a plurality of semiconductor wafers (60) are disposed on the one surface (21);
A rod-shaped main shaft (31) located on the other surface (22) side of the susceptor (20) and extending in a direction perpendicular to the other surface (22) of the susceptor (20), and a main shaft (31) A shaft (30) having a plurality of arms (32) extending radially from the upper end (31a) and connected to the other surface (22) of the susceptor (20);
A semiconductor manufacturing apparatus having a halogen lamp (40) on the other surface (22) side of the susceptor (20) and disposed outside the processing chamber (10) and serving as a heating source;
The connection point (23) between the other surface (22) of the susceptor (20) and the arm (32) is located farthest from the central axis of the main shaft (31) in the semiconductor wafer (60). The semiconductor manufacturing apparatus is located on the central axis side of the main shaft (31).   The number of the semiconductor wafers (60) and the number of the arms (32) arranged on one surface (21) of the susceptor (20) are the same, and the center axis of the main shaft (31) is the center. 10. The semiconductor manufacturing apparatus according to claim 9, wherein the semiconductor wafer (60) and the arm (32) are arranged so as to be rotationally symmetric.   The number of halogen lamps (40) disposed on the other surface (22) side of the susceptor (20), the number of semiconductor wafers (60) disposed on one surface (21) of the susceptor (20), and The number of the arms (32) is the same, and the semiconductor wafer (60), the arms (32), and the halogen lamp (40) are rotationally symmetrical about the central axis of the main shaft (31). The semiconductor manufacturing apparatus according to claim 9, wherein the semiconductor manufacturing apparatus is arranged as follows.   A connecting portion between a surface (32a) of the arm (32) parallel to the central axis of the main shaft (31) and a side surface (31c) of the main shaft (31) is chamfered. The semiconductor manufacturing apparatus according to claim 1. A method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to any one of claims 1 to 12,
A plurality of semiconductor wafers (60) are disposed on the susceptor (20), the inside of the processing chamber (10) is heated by the halogen lamp (40), and a reaction gas is flowed into the processing chamber (10) to A method of manufacturing a semiconductor device, comprising forming a film on a semiconductor wafer (60).

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