JP2000150405A - Heat treatment device for substrate and temperature compensating ring - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment device for a substrate, which can evenly treat the substrate over the whole surface by reducing the temperature difference between a temperature compensating ring and the substrate at the time of heat treatment. SOLUTION: A temperature compensating ring 11 compensates the temperature of a substrate W during heat treatment by surrounding the outer periphery of the main surface of the substrate W. Such a material that has a nearly equal characteristic value to that of the substrate W is used for the ring 11, with the characteristic value of a material being defined as the quotient when the specific heat is divided by the emissivity. Therefore, the temperatures of the heated substrate W and ring 11 become closer to each other. Therefore, the temperature difference between the substrate W and ring 11 can be reduced and the substrate W can be treated evenly over the whole surface when the substrate W is heat-treated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate such as a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a substrate for an optical disk (hereinafter simply referred to as "substrate").
The present invention relates to a substrate heat treatment apparatus for performing heat treatment on a substrate by light irradiation.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, various processes are performed on substrates. Among these processes, there is a process of heating the substrate by light irradiation in a predetermined atmosphere (including vacuum) for the purpose of forming an oxide film, a nitride film, or the like on the substrate, or performing an annealing process. In such a process involving heating of the substrate, a uniform heat treatment is required over the entire surface of the substrate in order to prevent a slip line from being generated near the peripheral portion of the substrate and to further increase the yield.

As a method for uniformizing the temperature distribution in the substrate surface in order to perform a uniform heat treatment on the substrate, there is a method disclosed in, for example, JP-A-2-291118. In this method, the in-plane temperature distribution of the substrate is improved by supplying a radiant heat flux to a peripheral portion of the substrate from a temperature compensation ring disposed so as to surround the outer periphery of the main surface of the substrate. Further, this temperature compensation ring is formed of a material having excellent heat resistance and not becoming a source of impurity contamination. Materials satisfying this condition include, for example, CVD-SiC and a carbon base material coated with SiC by CVD.

[0004]

However, since the temperature compensating ring made of the above material has a material characteristic largely different from that of the substrate, the temperature deviation from the substrate in the heat treatment becomes large,
This has an adverse effect on the in-plane temperature distribution of the substrate. A specific example of a temperature compensation ring made of SiC will be briefly described below.

FIG. 4 is a diagram showing a temporal change in the temperature of the substrate and the temperature of the temperature compensation ring made of SiC in the heat treatment. The horizontal axis t indicates time, and the vertical axis θ indicates temperature. The solid line A indicates the temperature of the substrate, and the virtual line B indicates the temperature of the temperature compensation ring. In this case, the diameter 2
A 00 mm substrate is heated at about 120 ° C./S to a target temperature of 1100 ° C.

[0006] From t = 0 to t = ts, a substrate temperature raising step is performed, and after t = ts, a substrate temperature maintaining step is performed. First,
In the temperature raising step, first, the ring temperature B becomes higher than the substrate temperature A by about 100 ° C., but the substrate temperature A becomes higher than the ring temperature B until the substrate temperature A exceeds about 700 ° C. and reaches the target temperature 1100 ° C. . Then, when the process proceeds to the temperature holding step, the ring temperature becomes higher by about 10 to 15 ° C. than the substrate temperature again. Here, since the temperature compensation ring is disposed so as to surround the outer periphery of the substrate, the temperature deviation as described above adversely affects the processing of the peripheral portion of the substrate.

FIG. 5 is a diagram showing the relationship between the diameter direction X of the substrate and the oxide film thickness of the substrate when the heat treatment is performed under the above conditions. The horizontal axis indicates the diameter direction X (see FIG. 3) when the center position of the substrate is set to 0, and the vertical axis indicates the oxide film thickness of the substrate. According to this graph, the film thickness is adjusted to 114 ± 1 ° when X is within ± 80 mm, but the film thickness at the periphery of the substrate after ± 80 mm is considerably affected by the ring surrounding the outer periphery of the substrate. It is getting thicker. This is because the ring temperature B is higher than the substrate temperature A in the temperature holding step.

The present invention has been made in view of the above problems, and provides a substrate heat treatment apparatus capable of reducing a temperature deviation between a substrate and a temperature compensation ring during a heat treatment and performing uniform processing over the entire surface of the substrate. With the goal. In addition,
The entire surface of the substrate refers to a substrate surface which can be used after the substrate processing (corresponding to almost the entire surface). For example, a substrate having a diameter of 200 mm corresponds to a range of about ± 97 mm from the center of the substrate.

[0009]

In order to solve the above-mentioned problems, the invention of claim 1 is a substrate heat treatment apparatus for performing heat treatment of a substrate by irradiating light, wherein (a) a processing chamber for accommodating the substrate; (B) a lamp for irradiating the substrate with the light, and (c) a temperature compensation for surrounding the outer periphery of the main surface of the substrate in the processing chamber to thereby perform temperature compensation of the substrate during the heat treatment. A characteristic value defined as a value obtained by dividing a specific heat by an emissivity, wherein a characteristic value of the temperature compensation ring is substantially equal to a characteristic value of the substrate.

According to a second aspect of the present invention, in the substrate heat treatment apparatus according to the first aspect, the temperature compensation ring is formed of the same material as the substrate.

According to a third aspect of the present invention, in the substrate heat treatment apparatus according to the first aspect, the substrate is a substrate made of single crystal silicon as a base material, and the base material of the temperature compensation ring is: It is selected from the group consisting of single crystal silicon and polycrystalline silicon.

The invention according to claim 4 is a substrate heat treatment apparatus for performing a heat treatment of a substrate by irradiating light, wherein (a) a processing chamber for accommodating the substrate; A lamp for performing irradiation; and (c) a temperature compensation ring for performing temperature compensation of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the processing chamber, and radiates a heat capacity per unit area. For an apparent heat capacity value defined as a value divided by a factor, the apparent heat capacity value of the temperature compensation ring is approximately equal to the apparent heat capacity value of the substrate.

According to a fifth aspect of the present invention, there is provided a substrate heat treatment apparatus for performing a heat treatment on a substrate having a multilayer film structure by irradiating the substrate with light, wherein (a) a processing chamber for accommodating the substrate; (B) a lamp for irradiating the substrate with the light, and (c) a temperature compensation for surrounding the outer periphery of the main surface of the substrate in the processing chamber to thereby perform temperature compensation of the substrate during the heat treatment. A multilayer film structure corresponding to the multilayer film structure of the substrate is formed on the temperature compensation ring.

According to a sixth aspect of the present invention, in a substrate heat treatment apparatus for performing a heat treatment of a substrate by light irradiation, a temperature for performing temperature compensation of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the treatment chamber. With respect to a characteristic value defined as a value obtained by dividing specific heat by emissivity, the characteristic value of the temperature compensating ring is substantially equal to the characteristic value of the substrate.

According to a seventh aspect of the present invention, in a substrate heat treatment apparatus for performing a heat treatment of a substrate by light irradiation, a temperature for performing temperature compensation of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the treatment chamber. For an apparent heat capacity value defined as the heat capacity per unit area divided by the emissivity of the compensation ring, the apparent heat capacity value of the temperature compensation ring is substantially equal to the apparent heat capacity value of the substrate.

According to another aspect of the present invention, there is provided a substrate heat treatment apparatus for performing heat treatment of a substrate having a multilayer structure by irradiating the substrate with light, by surrounding an outer periphery of a main surface of the substrate in the processing chamber. A temperature compensation ring for performing temperature compensation of a substrate during a heat treatment, wherein a multilayer film structure corresponding to a multilayer film structure of the substrate is formed on a surface of the temperature compensation ring.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <Main Configuration of Substrate Heat Treatment Apparatus 1 of First Embodiment> FIG. 1 is a longitudinal sectional view showing a substrate heat treatment apparatus 1 according to a first embodiment of the present invention.

The substrate heat treatment apparatus 1 of the present embodiment
And a lamp 31 that irradiates light for heating the substrate W.

The chamber 2 is provided with a quartz window 2 covering the upper part of the substrate W in a container body 21 covering the lower part and the side periphery of the substrate W.
2 is attached. The quartz window 22 is positioned between the substrate W placed in the chamber 2 and the lamp 31 and serves as a window for transmitting light from the lamp 31. The container body 21 has a carry-in / out entrance 21A for carrying in / out the substrate W, and a door 23 is provided at the carry-in / out entrance 21A so as to be openable and closable. Further, the container main body 21 is provided with a supply port 21B for supplying various gases such as nitrous oxide and ammonia into the chamber 2 and an exhaust port 21D for exhausting the gas in the chamber 2.

A cooling water passage 211 is provided inside the container body 21 so as not to be heated by the light from the lamp 31.
Is formed, and the chamber 2 of the container main body 21 is formed.
The portion facing the inside is processed so that light can be reflected and the substrate W can be efficiently heated, and the substrate W
Is formed with a reflection surface 21E so that the radiation light from the substrate W can be efficiently reflected. Preferably, the reflection surface 21E is set to have a size larger than the substrate W.

The lamp 31 is provided such that a plurality of rod-shaped lamps are covered by a cover 61 outside the chamber 2. The lid portion 61 has a cooling water channel 611 formed in the same manner as the container body portion 21, and further has a mirror surface so that the substrate W can be efficiently heated by reflecting light from the lamp 31 and efficiently heating the substrate W. Has been processed.

Next, a configuration in which the substrate W is rotated while supporting the substrate W inside the chamber 2 will be described.

The supporting portion 10 is configured to compensate the temperature of the substrate W during the heat treatment and to support a temperature compensating ring 11 for supporting the peripheral portion of the substrate W on a supporting column 12. For details of the temperature compensation ring 11,
It will be described later. In addition, the support unit 10 is driven by the rotation drive unit 72 to perform a rotational movement about a shaft 21C that is the center of the substrate W to be supported. This allows
The substrate W being processed is rotated along the outer circumference.

The rotation drive section 72 is provided below the container body 21 and is connected to the support section 12 so as to be connected to the chamber 2.
The magnet 721 disposed inside, the magnet 722 disposed outside the chamber 2, the bearings 723 and 724 for guiding the magnets 721 and 722 respectively about the shaft 21 </ b> C, and the driving source for the movement of the magnet 722 outside the chamber 2 Motor 725 to be used. Also, the magnet 721 and the magnet 7
Pairs 22 are arranged on the circumference around the shaft 21C in pairs so as to sandwich a part of the container body 21 from inside and outside of the chamber 2, and the bearings 723 and 724 are arranged around the shaft 21C. It has a circular shape. FIG. 1 does not show these components.

When the motor 725 is driven, the magnet 722 rotates about the axis 21C, and the magnet 721 in the chamber 2 that interacts with the magnet 722 also rotates about the axis 21C. The magnet 721 is connected to the support column 12, and when the magnet 721 rotates around the shaft 21C, the support column 12 and the temperature compensation ring 11 rotate around the shaft 21C. Thereby, the substrate W is rotated along the outer circumference.

By rotating the substrate W in this manner, it is possible to contribute to the uniformization of the temperature distribution of the substrate W when the substrate W is subjected to a process involving heating.

In the lower part of the container body 21, three lift portions 8 for raising and lowering the substrate W are provided (two other lift portions are omitted in FIG. 1).
A radiation thermometer 6 for measuring the temperature of the substrate W
Is provided. The lift section 8 has a lift pin 81 that moves up and down inside.

<Details of Configuration of Temperature Compensation Ring 11> FIG.
FIG. 3 is a plan view of the temperature compensation ring 11 in a state where the substrate W is supported. FIG. 3 is a cross-sectional view as viewed from the position of III-III in FIG.

The temperature compensating ring 11 is an annular ring having a thickness of about 1 to 2 mm, and is provided with a step 11G having a depth of about 0.2 to 0.3 mm from an inner peripheral edge to an outer peripheral direction for mounting the substrate W thereon. 12 is connected to the upper part substantially horizontally.

The material of the temperature compensation ring 11 will be described below.

First, a value obtained by dividing the specific heat by the emissivity is defined as a “characteristic value”. In this definition, the division by the emissivity is because the substrate heat treatment apparatus performs heating by the irradiation light of the lamp, and thus the temperature rise is different depending on the emissivity. Then, a material having a characteristic value substantially equal to the characteristic value of the substrate W is used for the ring 11. Here, “approximately equal” means that the ratio of the characteristic value of the ring 11 divided by the characteristic value of the substrate W is about 0.95 to 1.10.

As a material of the temperature compensation ring 11, a substrate W
If the same material is used, the above characteristic value becomes substantially equal to the substrate W. When the substrate W is made of single-crystal silicon as a base material, if single-crystal silicon or polycrystalline silicon is used as a material of the base material of the ring 11, the characteristic value becomes substantially equal to that of the substrate W. Here, the “base material” of the substrate refers to a substance that is a basic material of the substrate including a case where the substrate contains impurities and the like.

Actually, when the substrate W is single crystal silicon, the relationship between the substrate W and the characteristic values of these materials is as shown in Table 1, and these materials are included in the range defined by the present invention. You can see that it is.

[0034]

[Table 1]

Further, as shown in FIG. 7, in a substrate W having a multilayer structure in which a silicon oxide film and a polysilicon layer are laminated on the upper and lower main surfaces of a silicon single crystal in this order, respectively. If the ring 11 has the same multilayer structure as that of the substrate W, the characteristic values are almost the same.

Here, preferably, the multilayer structure of the temperature compensation ring 11 is substantially the same as the multilayer structure of the substrate W, but the thickness of each film is slightly different between the substrate W and the temperature compensation ring 11. Even if they are different, it is sufficient that a similar multilayer film structure is formed as the thermal characteristics. If the thermal characteristics are similar, a part of the multilayer film on the substrate W in the temperature compensation ring 11 may be omitted.

Due to the configuration of the temperature compensation ring 11, the substrate W is held substantially horizontally. Further, the substrate W and the ring 1
Heat is conducted through the contact surface 11T of the first substrate 1 and radiant heat flux is supplied to the substrate W from the surface of the ring 11 facing the substrate W.

<Operation and Result of Processing of Substrate Heat Treatment Apparatus 1> The operation of the substrate heat treatment apparatus 1 having such a configuration is as follows.

First, an unprocessed substrate W gripped by the hand 91 shown in FIG. Then, the substrate W is placed on the lift pins 81 that are waiting to be lifted. Next, after the hand 91 is evacuated to the outside of the chamber 2, the substrate W is placed on the temperature compensation ring 11 by lowering the lift pins 81.

Thereafter, the rotation drive section 72 is activated to rotate the substrate W, and the substrate W is heated by irradiation with light from the lamp 31. Here, the in-plane temperature distribution of the substrate W is made substantially uniform by the temperature compensating ring 11 whose characteristic value is close to that of the substrate W, so that good processing is performed over the entire surface.

The operation of carrying out the heated substrate W out of the chamber 2 is the reverse of the above described carrying-in operation.

The result of performing the above-described operation in the substrate processing apparatus 1 and performing the heating process on the substrate W will be described below.

FIG. 6 is a diagram showing the relationship between the diameter direction X of the substrate and the oxide film thickness of the substrate when the temperature compensation ring 11 formed of the same material as the substrate W is used. The horizontal axis indicates the substrate diameter direction X in FIG. 3, and the vertical axis indicates the oxide film thickness of the substrate. When the substrate W to be subjected to the heat treatment is a single crystal silicon wafer having a diameter of 200 mm, the temperature compensation ring 11 removes a central portion of the single crystal silicon wafer having a diameter larger than the shape of the substrate W and having a diameter of 300 mm. It is made by doing. The condition of the graph of FIG. 5 is different in that the temperature compensation ring 11 is formed of the same material (single-crystal silicon) as the substrate W instead of SiC of a different material from the substrate W.

In the graph of FIG. 6, X is ± 8 in FIG.
The problem that the film thickness increases at the periphery of the substrate after 0 mm is solved, and the oxide film thickness is adjusted to ± 1 ° over the entire surface of the substrate to perform uniform processing.

The reason why the substrate processing is improved as described above is that the temperature compensating ring 11 has substantially the same characteristic value as the substrate W, and therefore the ring 11 and the substrate W
This is because there is almost no temperature deviation. That is,
It is as if the peripheral edge WE of the substrate W shown in FIG. Along with this, the portion where the oxide film thickness is favorably adjusted to ± 1 ° in FIG. 5, that is, the portion within the range of ± 80 mm from the center of the substrate is enlarged to include the substrate W having a diameter of 200 mm.
Thus, it is considered that the film thickness of the substrate W is favorably processed over the entire surface of the substrate W.

<Main Part Configuration of Substrate Heat Treatment Apparatus of Second Embodiment> The substrate heat treatment apparatus of the second embodiment of the present invention has a main part configuration of the substrate heat treatment apparatus 1 of the first embodiment shown in FIG. This is the same except for the compensation ring 11.

For the temperature compensating ring 11, in the first embodiment, a material whose characteristic value is similar is selected from the viewpoint of improving the ring material. In the second embodiment, when the material is not close to the substrate or when it is desired to further enhance the uniformity of the substrate processing even when the material is close to the substrate, the ring having the same thermal characteristics as the substrate W from the viewpoint of improving the ring shape is used. Perform temperature compensation of the substrate. Hereinafter, this ring shape will be described.

First, a value obtained by dividing the heat capacity per unit area by the emissivity is defined as "apparent heat capacity value". Here, the reason why the division is made by the emissivity is that, like the characteristic value, the temperature rise is different depending on the emissivity, and the smaller the emissivity, the more difficult it is to heat and the larger the apparent heat capacity value.
The ring 11 is shaped so that the apparent heat capacity value of the temperature compensation ring 11 and the apparent heat capacity value of the substrate W are substantially equal.

As a specific example, the thickness tr (see FIG. 3) of the ring 11 is obtained when SiC of a material having a different characteristic value from the substrate W is used for the temperature compensation ring 11.

First, the heat capacity Q of the temperature compensation ring is

[0051]

(Equation 1)

Is as follows. And the heat capacity q per unit area is

[0053]

(Equation 2)

Thus, the apparent heat capacity value qw of the substrate W having the emissivity εw and the apparent heat capacity value qr of the temperature compensation ring 11 having the emissivity εr are as follows from the above definition.

[0055]

(Equation 3)

Here, the ring thickness tr such that qw = qr is

[0057]

(Equation 4)

Is obtained.

Assuming a single crystal silicon wafer as the actual substrate W and a substrate having a thickness tw of 0.725 mm, the ring thickness tr made of SiC is calculated from the above equation as follows. .

In the above formula, Cw = 0.168 cal / g. ° C., gw = 2.3 g
/ cm3, εw = 0.7, Cr = 0.20cal / g · ° C, gr = 3.2g / cm
3. Substituting εr = 0.9, the ring thickness is tr = 0.563mm
Becomes

The temperature deviation between the substrate W and the ring 11 during the heating process is reduced by the temperature compensating ring 11 having the shape tr having the thickness tr thus obtained, and good processing is performed over the entire surface.

In addition, a multi-layer structure, which is a single-crystal silicon wafer having a diameter of 200 mm corresponding to the multi-layer structure of the substrate W, is formed on the temperature compensation ring 11 with respect to the multi-layer structure of the substrate shown in FIG. The other points are the same as in the first embodiment.

The operation of the substrate heat treatment apparatus of the second embodiment is the same as that of the apparatus 1 of the first embodiment.

[0064]

As described above, according to the first aspect of the present invention, the characteristic value of the material of the temperature compensation ring is substantially equal to the characteristic value of the substrate. The temperature becomes similar.

Accordingly, the temperature deviation between the substrate and the temperature compensation ring during the heat treatment in the substrate heat treatment apparatus is reduced, and uniform and favorable processing can be performed over the entire surface of the substrate.

According to the second aspect of the present invention, since the temperature compensating ring is formed of the same material as the substrate, the characteristic values of the substrate and the ring become substantially equal, so that more favorable processing of the substrate becomes possible. Become.

According to the third aspect of the present invention, when the substrate is a substrate made of single crystal silicon as a base material, single crystal silicon or polycrystalline silicon is used as a base material of the temperature compensation ring. As in the case of the second aspect, the characteristic values of the substrate and the ring are substantially equal to each other, and excellent substrate processing can be performed.

According to the fourth aspect of the present invention, since the apparent heat capacity of the temperature compensation ring is substantially equal to the apparent heat capacity of the substrate, the temperature deviation between the substrate to be heated and the temperature compensation ring is almost eliminated. . Therefore, uniform processing can be performed over the entire surface of the substrate.

According to the fifth aspect of the present invention, in the case of a substrate having a multilayer film structure, the temperature compensation ring has a multilayer film structure corresponding to this substrate. As a result, the substrate can be processed satisfactorily.

According to the invention of claim 6, according to claim 1,
As in the invention of the third aspect, since the characteristic value of the material of the temperature compensation ring is substantially equal to the characteristic value of the substrate, the temperature of the substrate to be heated and the temperature of the temperature compensation ring become similar. Therefore, the temperature deviation between the substrate and the temperature compensation ring during the heat treatment is reduced, and uniform processing can be performed over the entire surface of the substrate.

According to the invention of claim 7, according to claim 4,
Since the apparent heat capacity value of the temperature compensating ring is substantially equal to the apparent heat capacity value of the substrate, the temperature deviation between the substrate to be heated and the temperature compensating ring is almost eliminated. Therefore, uniform processing can be performed over the entire surface of the substrate.

Further, according to the invention of claim 8, according to claim 5,
As in the invention of the above, in the case of a substrate having a multilayer structure,
To use a ring with a multilayer structure corresponding to this substrate,
The characteristic values of the substrate and the ring become almost equal, and good substrate processing becomes possible.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a substrate heat treatment apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view of the temperature compensation ring in a state where the substrate is supported.

FIG. 3 is a cross-sectional view as viewed from a position III-III in FIG. 2;

FIG. 4 is a diagram showing a temporal change of a substrate temperature and a temperature of a temperature compensation ring made of SiC in a substrate heating process.

FIG. 5 is a diagram illustrating a relationship between a diameter direction X of a substrate and an oxide film thickness of the substrate when a temperature compensation ring made of SiC is used.

FIG. 6 is a diagram illustrating a relationship between a diameter direction X of the substrate and an oxide film thickness of the substrate when a temperature compensation ring formed of the same material as the substrate is used.

FIG. 7 is a diagram showing an example of a substrate having a multilayer structure.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate heat treatment apparatus 2 Chamber 10 Support part 11 Temperature compensation ring 12 Support pillar 21 Container main body part 31 Lamp 61 Cover part W Substrate

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Toshiyuki Kobayashi 4-chome Tenjin Kitamachi 1-chome, Horikawa-dori-Terauchi, Kamigyo-ku, Kyoto F-term (reference) 5F045 AF03 AF07 BB02 DP04 EB02 EB03 EK12 EK21 EM01 EM09 EM10

Claims (8)

[Claims] 1. A substrate heat treatment apparatus for performing heat treatment of a substrate by light irradiation, comprising: (a) a processing chamber for accommodating the substrate; (b) a lamp for irradiating the substrate with the light; c) a temperature compensating ring for compensating the temperature of the substrate during the heat treatment by surrounding the outer periphery of the main surface of the substrate in the processing chamber, wherein the temperature is defined as a value obtained by dividing specific heat by emissivity. As for the characteristic value, the characteristic value of the temperature compensation ring is substantially equal to the characteristic value of the substrate. 2. The substrate heat treatment apparatus according to claim 1, wherein the temperature compensation ring is formed of the same material as the substrate. 3. The substrate heat treatment apparatus according to claim 1, wherein the substrate is a substrate made of single crystal silicon as a base material, and a material of the base material of the temperature compensation ring is made of single crystal silicon or polycrystalline silicon. A substrate heat treatment apparatus selected from the group consisting of: 4. A substrate heat treatment apparatus for performing heat treatment of a substrate by light irradiation, comprising: (a) a processing chamber for accommodating the substrate; (b) a lamp for irradiating the substrate with the light; c) a temperature compensation ring for performing temperature compensation of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the processing chamber, wherein a heat capacity per unit area is divided by an emissivity. An apparatus for heat treating a substrate, wherein an apparent heat capacity value of the temperature compensation ring is substantially equal to an apparent heat capacity value of the substrate with respect to an apparent heat capacity value defined. 5. A substrate heat treatment apparatus for performing heat treatment on a substrate having a multilayer film structure by irradiating the substrate with light, comprising: (a) a processing chamber for accommodating the substrate; And (c) a temperature compensation ring that performs temperature compensation of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the processing chamber. A substrate heat treatment apparatus, wherein a multilayer structure corresponding to the multilayer structure of the substrate is formed on the temperature compensation ring. 6. A temperature compensation ring for performing a heat treatment of a substrate by light irradiation, wherein the temperature compensation ring is configured to compensate for the temperature of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the treatment chamber. Wherein the characteristic value of the temperature compensating ring is approximately equal to the characteristic value of the substrate. 7. A substrate heat treatment apparatus for performing heat treatment of a substrate by light irradiation, a temperature compensation ring for performing temperature compensation of the substrate during the heat treatment by surrounding an outer periphery of a main surface of the substrate in the treatment chamber, comprising: With respect to an apparent heat capacity value defined as a heat capacity per area divided by an emissivity, an apparent heat capacity value of the temperature compensation ring is substantially equal to an apparent heat capacity value of the substrate. . 8. A substrate heat treatment apparatus for performing heat treatment of a substrate having a multilayer film structure by irradiating light to the substrate, wherein the temperature of the substrate during the heat treatment is increased by surrounding an outer periphery of a main surface of the substrate in the treatment chamber. A temperature compensation ring for performing compensation, wherein a multilayer structure corresponding to a multilayer structure of the substrate is formed on a surface of the temperature compensation ring.