JP5135769B2 - Manufacturing method of surface acoustic wave device - Google Patents

Manufacturing method of surface acoustic wave device Download PDF

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JP5135769B2
JP5135769B2 JP2006306346A JP2006306346A JP5135769B2 JP 5135769 B2 JP5135769 B2 JP 5135769B2 JP 2006306346 A JP2006306346 A JP 2006306346A JP 2006306346 A JP2006306346 A JP 2006306346A JP 5135769 B2 JP5135769 B2 JP 5135769B2
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electrode
hole
metal
piezoelectric substrate
acoustic wave
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JP2008124786A (en
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敦 鷹野
光弘 古川
了一 高山
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Description

本発明は、主として移動体通信機器にて使用される表面実装型の弾性表面波デバイスとその製造方法に関するものである。 The present invention relates to a surface-mount type surface acoustic wave device mainly used in mobile communication equipment and a method of manufacturing the same.

従来のこの種の弾性表面波デバイスとしては、図６に示すように、櫛型電極１の励振領域を形成するために、金属からなる側壁２および天板３で圧電基板４の上面部分を覆っていた。   As a conventional surface acoustic wave device of this type, as shown in FIG. 6, the upper surface portion of the piezoelectric substrate 4 is covered with a side wall 2 and a top plate 3 made of metal in order to form an excitation region of the comb-shaped electrode 1. It was.

なお、この出願の発明に関する先行技術文献情報としては、例えば、特許文献１が知られている。
特開２００４−３６４０４１号公報 As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.
Japanese Patent Laid-Open No. 2004-364041

上記した従来の弾性表面波デバイスは、側壁２が硬い金属で形成されていたため、実装時にこの弾性表面波デバイスの実装面に応力が加わると、側壁２を経由してその応力が圧電基板４に直接伝達されてしまい、これにより、圧電基板４に歪みを発生させるため、弾性表面波デバイスの周波数変動を引き起こすという課題を有していた。   In the conventional surface acoustic wave device described above, since the side wall 2 is formed of a hard metal, when stress is applied to the mounting surface of the surface acoustic wave device during mounting, the stress is applied to the piezoelectric substrate 4 via the side wall 2. In this case, the piezoelectric substrate 4 is distorted, which causes a distortion of the surface acoustic wave device.

本発明は、上記従来の課題を解決するもので、弾性表面波デバイスにおける面実装時の周波数変動を抑制することを得ることを目的とするものである。   The present invention solves the above-described conventional problems, and an object thereof is to obtain suppression of frequency fluctuations during surface mounting in a surface acoustic wave device.

上記目的を達成するために本発明は、圧電基板と、この圧電基板上に設けられた櫛型電極およびパッド電極と、圧電基板上において櫛型電極の励振領域を囲むように設けられた樹脂壁と、樹脂壁の開口部を覆い励振領域を密封する天板と、天板上に設けられパッド電極と接続される外部電極と、天板および樹脂壁中に設けられパッド電極と外部電極を接続するビア電極とを備え、ビア電極を圧電基板側に位置する第１のビア電極と天板側に位置する第２のビア電極とに分割し、第１のビア電極の中心位置と第２のビア電極の中心位置を異ならせたのである。   To achieve the above object, the present invention provides a piezoelectric substrate, a comb electrode and a pad electrode provided on the piezoelectric substrate, and a resin wall provided on the piezoelectric substrate so as to surround the excitation region of the comb electrode. A top plate that covers the opening of the resin wall and seals the excitation area; an external electrode that is provided on the top plate and connected to the pad electrode; and a pad electrode that is provided in the top plate and the resin wall and connects to the external electrode A via electrode, and the via electrode is divided into a first via electrode located on the piezoelectric substrate side and a second via electrode located on the top plate side, and a center position of the first via electrode and a second via electrode The center position of the via electrode was made different.

本発明の弾性表面波デバイスによれば、面実装時の周波数変動を抑制できるという効果が得られるものである。   According to the surface acoustic wave device of the present invention, it is possible to obtain the effect of suppressing frequency fluctuations during surface mounting.

図１は本発明の一実施の形態における弾性表面波デバイスの断面図であり、圧電基板１１と、この圧電基板１１上に設けられた櫛型電極１２およびパッド電極１３と、圧電基板１１上において櫛型電極１２の励振領域を囲むように設けられた樹脂壁１４と、樹脂壁１４の開口部を覆い励振領域を密封する天板１５と、天板１５上に設けられパッド電極１３と接続される外部電極１６と、天板１５および樹脂壁１４中に設けられパッド電極１３と外部電極１６を接続するビア電極１７とを備え、ビア電極１７を圧電基板１１側に位置する第１のビア電極１７ａと天板１５側に位置する第２のビア電極１７ｂとに分割し、第１のビア電極１７ａの中心位置と第２のビア電極１７ｂの中心位置を異ならせている。   FIG. 1 is a cross-sectional view of a surface acoustic wave device according to an embodiment of the present invention. In the piezoelectric substrate 11, a comb electrode 12 and a pad electrode 13 provided on the piezoelectric substrate 11, and the piezoelectric substrate 11. The resin wall 14 provided so as to surround the excitation region of the comb-shaped electrode 12, the top plate 15 covering the opening of the resin wall 14 and sealing the excitation region, and the pad electrode 13 provided on the top plate 15 and connected to the pad electrode 13. And a via electrode 17 provided in the top plate 15 and the resin wall 14 to connect the pad electrode 13 and the external electrode 16, and the via electrode 17 is located on the piezoelectric substrate 11 side. 17a and the second via electrode 17b located on the top plate 15 side, and the center position of the first via electrode 17a is different from the center position of the second via electrode 17b.

そして、第２のビア電極１７ｂの中心位置に対して第１のビア電極１７ａの中心位置を、近接する圧電基板１１の端面より内側に向け、かつ、第１のビア電極１７ａの径を第２のビア電極１７ｂの径より小さくしている。   Then, the center position of the first via electrode 17a is directed inward from the end face of the adjacent piezoelectric substrate 11 with respect to the center position of the second via electrode 17b, and the diameter of the first via electrode 17a is set to the second value. The diameter of the via electrode 17b is smaller.

圧電基板１１は、３９°ＹカットＸ伝播ＬｉＴａＯ3で構成され、その表面には弾性表面波を励振及び受信するための櫛型電極１２と、この櫛型電極１２の信号を取り出すパッド電極１３が形成されている。また、圧電基板１１上には櫛型電極１２の励振領域を囲むように感光性エポキシ樹脂からなる厚み２５μｍの樹脂壁１４が設けられている。また、樹脂壁１４中には銅からなる第１のビア電極１７ａがパッド電極１３と接続されるように形成されている。 The piezoelectric substrate 11 is made of 39 ° Y-cut X-propagating LiTaO 3 , and has a comb electrode 12 for exciting and receiving a surface acoustic wave on its surface, and a pad electrode 13 for extracting a signal from the comb electrode 12. Is formed. On the piezoelectric substrate 11, a resin wall 14 having a thickness of 25 μm made of a photosensitive epoxy resin is provided so as to surround the excitation region of the comb-shaped electrode 12. Further, a first via electrode 17 a made of copper is formed in the resin wall 14 so as to be connected to the pad electrode 13.

天板１５は、樹脂壁１４の開口部を覆い櫛型電極１２の励振領域を密封するものであり、特に励振領域と対峙する部分にはグランドに接続される銅製の金属領域１８が設けられ、この金属領域１８におけるビア電極１７部分には、金属領域１８とビア電極１７を分離するための樹脂層１９が設けられている。   The top plate 15 covers the opening of the resin wall 14 and seals the excitation region of the comb-shaped electrode 12. In particular, a copper metal region 18 connected to the ground is provided at a portion facing the excitation region. A resin layer 19 for separating the metal region 18 and the via electrode 17 is provided in the via electrode 17 portion of the metal region 18.

以下、本発明の一実施の形態における弾性表面波デバイスの製造方法について説明する。   Hereinafter, a method for manufacturing a surface acoustic wave device according to an embodiment of the present invention will be described.

まず、図２（ａ）に示すように、圧電基板１１上に櫛型電極１２およびパッド電極１３を、フォトリソグラフィー技術により形成し、その後、圧電基板１１上において櫛型電極１２の外周部分を囲むように厚さ２５μｍの感光性エポキシシートをラミネートし、露光、現像して樹脂壁１４を形成する。このとき、第１のビア電極１７ａに対応する部分に第１の貫通孔２０を形成しておく。   First, as shown in FIG. 2A, the comb electrode 12 and the pad electrode 13 are formed on the piezoelectric substrate 11 by photolithography, and then the outer peripheral portion of the comb electrode 12 is surrounded on the piezoelectric substrate 11. In this manner, a photosensitive epoxy sheet having a thickness of 25 μm is laminated, exposed, and developed to form the resin wall 14. At this time, the first through hole 20 is formed in a portion corresponding to the first via electrode 17a.

次に、図２（ｂ）に示すように、樹脂壁１４の開口部を覆い櫛型電極１２の励振領域を密封するように、銅箔２１を樹脂壁１４の上端及び開口部の全体にラミネートする。   Next, as shown in FIG. 2B, a copper foil 21 is laminated on the upper end of the resin wall 14 and the entire opening so as to cover the opening of the resin wall 14 and seal the excitation region of the comb electrode 12. To do.

次に、図２（ｃ）に示すように、銅箔２１をエッチングし、弾性表面波デバイスの少なくとも信号経路に位置する電極をグランド接続される金属領域１８を形成する部分から分離する。   Next, as shown in FIG. 2C, the copper foil 21 is etched to separate the electrode located at least in the signal path of the surface acoustic wave device from the portion where the metal region 18 to be grounded is formed.

次に、図３（ａ）に示すように、銅箔２１を形成した面上に感光性樹脂を塗布し、露光、現像した後、１６０℃、６０分で加熱硬化することにより樹脂層１９を形成する。このとき、第２のビア電極１７ｂに対応する第２の貫通孔２２も同時に形成する。また、第１の貫通孔２０の中心位置は、第２の貫通孔２２の中心位置と異なり、第２の貫通孔２２の中心位置に対して近接する圧電基板１１の端面より内側に向くようにする。   Next, as shown in FIG. 3A, a photosensitive resin is applied on the surface on which the copper foil 21 is formed, exposed and developed, and then heated and cured at 160 ° C. for 60 minutes to form the resin layer 19. Form. At this time, a second through hole 22 corresponding to the second via electrode 17b is also formed at the same time. Also, the center position of the first through hole 20 is different from the center position of the second through hole 22, and is directed inward from the end surface of the piezoelectric substrate 11 that is close to the center position of the second through hole 22. To do.

次に、銅箔２１の露出部分に対して図３（ｂ）に示すように銅めっき２１ａを施すことによって、金属領域１８の厚みを厚くするとともに、貫通孔２０，２２を銅で充填し第１、第２のビア電極１７ａ，１７ｂを形成する。   Next, as shown in FIG. 3B, the exposed portion of the copper foil 21 is subjected to copper plating 21a to increase the thickness of the metal region 18 and fill the through holes 20 and 22 with copper. First, second via electrodes 17a and 17b are formed.

最後に、図３（ｃ）に示すように、天板１５の上面部分を研磨して平坦化してから第２のビア電極１７ｂに接続する外部電極１６を形成する。   Finally, as shown in FIG. 3C, the upper surface portion of the top plate 15 is polished and flattened, and then the external electrode 16 connected to the second via electrode 17b is formed.

また、金属で形成された第１、第２のビア電極１７ａ，１７ｂが軟質な樹脂壁１４および樹脂層１９の中に埋設されているため、実装面となる天板１５から応力が加わることにより、第１、第２のビア電極１７ａ，１７ｂを介して応力が伝わるが、本発明のように、第１のビア電極１７ａの中心位置と第２のビア電極１７ｂの中心位置を異ならせることによって、第１のビア電極１７ａと第２のビア電極１７ｂとの中心位置のずれた部分、つまり、第１のビア電極１７ａの中心位置と第２のビア電極１７ｂの中心位置との間に、応力に伴う歪みを集中させることができ、結果的に圧電基板１１における歪み量が減り、面実装時の周波数変動を抑制できる。   Further, since the first and second via electrodes 17a and 17b made of metal are embedded in the soft resin wall 14 and the resin layer 19, stress is applied from the top plate 15 serving as a mounting surface. The stress is transmitted through the first and second via electrodes 17a and 17b, but the center position of the first via electrode 17a is different from the center position of the second via electrode 17b as in the present invention. , A stress is generated between the first via electrode 17a and the second via electrode 17b, which are shifted from each other, that is, between the central position of the first via electrode 17a and the central position of the second via electrode 17b. As a result, the amount of distortion in the piezoelectric substrate 11 is reduced, and frequency fluctuations during surface mounting can be suppressed.

また、第２のビア電極１７ｂの中心位置に対して第１のビア電極１７ａの中心位置を、図４に示すように近接する圧電基板１１の端面より内側に向けるようにずらせているため、異なる第１のビア電極１７ａ間の距離を小さくすることができ、これにより、圧電基板１１が第１のビア電極１７ａから受ける応力のモーメントを小さくできる。この結果、第１のビア電極１７ａが圧電基板１１に与える応力を緩和でき、これにより、圧電基板１１における歪み量が減り、面実装時の周波数変動を抑制できる。   Further, the center position of the first via electrode 17a is shifted from the center position of the second via electrode 17b so as to be directed inward from the end face of the adjacent piezoelectric substrate 11 as shown in FIG. The distance between the first via electrodes 17a can be reduced, whereby the moment of stress that the piezoelectric substrate 11 receives from the first via electrode 17a can be reduced. As a result, the stress applied to the piezoelectric substrate 11 by the first via electrode 17a can be relieved, thereby reducing the amount of distortion in the piezoelectric substrate 11 and suppressing the frequency fluctuation during surface mounting.

さらに、第１のビア電極１７ａの径を第２のビア電極１７ｂの径より小さくしているため、第１のビア電極１７ａと圧電基板１１側との当接面積が小さくなり、これにより、第１のビア電極１７ａが圧電基板１１に与える実装応力を緩和できるため、圧電基板１１における歪み量が減り、面実装時の周波数変動を抑制できる。   Furthermore, since the diameter of the first via electrode 17a is smaller than the diameter of the second via electrode 17b, the contact area between the first via electrode 17a and the piezoelectric substrate 11 side is reduced, and thereby Since the mounting stress applied to the piezoelectric substrate 11 by the one via electrode 17a can be relaxed, the amount of distortion in the piezoelectric substrate 11 is reduced, and the frequency fluctuation during surface mounting can be suppressed.

なお、ビア電極１７ａ，１７ｂは元来、電気信号の経路として機能するだけでなく、櫛型電極１２の励振による発熱を外部に逃がす役割も果たしているが、圧電基板１１側に配置される第１のビア電極１７ａの中心位置や径を小さくしたことによって、熱伝達経路内に狭小部が生じてしまい結果として熱伝達量が低下するが、本発明では、励振領域に対応する天板１５部分にグランドに接続される金属領域１８を設けているので、励振領域で発生した輻射熱が金属領域１８を介してグランドに放出されるようになり、これにより、弾性表面波デバイスの放熱性が高くなるため、弾性表面波デバイスの耐電力性が向上できるのである。   The via electrodes 17a and 17b not only function as an electric signal path, but also play a role of releasing heat generated by the excitation of the comb-shaped electrode 12 to the outside. However, the via electrodes 17a and 17b are arranged on the piezoelectric substrate 11 side. By reducing the center position and diameter of the via electrode 17a, a narrow portion is generated in the heat transfer path, resulting in a decrease in the amount of heat transfer. In the present invention, however, the top plate 15 corresponding to the excitation region Since the metal region 18 connected to the ground is provided, the radiant heat generated in the excitation region is released to the ground through the metal region 18, thereby increasing the heat dissipation of the surface acoustic wave device. The power durability of the surface acoustic wave device can be improved.

また、上述した製造工程において、径の小さい第１のビア電極１７ａを樹脂壁１４部分に設け、径の大きい第２のビア電極１７ｂを天板１５部分に設けることによって、それぞれの径の大きさが貫通孔２０，２２の大きさとして自在に決められるため容易にビア電極１７ａ，１７ｂ径を調節することができるのである。なお、上述した一実施形態においては、第１のビア電極１７ａが第２のビア電極１７ｂの重なる位置に配置した構成を例に挙げて説明したが、図５に示されるように、第１のビア電極１７ａと第２のビア電極１７ｂを互いに重ならない位置に接続し、それらを接続電極２３で接続した構成とすれば、金属で形成され硬質な柱状体である第１、第２のビア電極が一直線上に配置されなくなり、実装により生じる応力をより緩和でき、これにより、圧電基板１１における歪み量が減り、面実装時の周波数変動をさらに抑制できるのである。   Further, in the manufacturing process described above, the first via electrode 17a having a small diameter is provided in the resin wall 14 portion, and the second via electrode 17b having a large diameter is provided in the top plate 15 portion. Since the through holes 20 and 22 can be freely determined, the via electrodes 17a and 17b can be easily adjusted in diameter. In the embodiment described above, the configuration in which the first via electrode 17a is disposed at the position where the second via electrode 17b overlaps has been described as an example. However, as illustrated in FIG. If the via electrode 17a and the second via electrode 17b are connected to a position where they do not overlap each other and are connected by the connection electrode 23, the first and second via electrodes which are formed of metal and are hard columnar bodies Are not arranged on a straight line, and stress generated by mounting can be further relaxed, whereby the amount of distortion in the piezoelectric substrate 11 is reduced, and frequency fluctuations during surface mounting can be further suppressed.

また、接続電極２３を金属領域１８と同じ金属材料で形成すれば、先に図２（ｃ）で述べた銅箔２１をエッチングする際に接続電極２３を併せて形成できるため、容易に接続電極２３を設けることができるのである。   Further, if the connection electrode 23 is formed of the same metal material as that of the metal region 18, the connection electrode 23 can be formed together when the copper foil 21 described above with reference to FIG. 23 can be provided.

本発明に係る弾性表面波デバイスは、面実装時の周波数変動を抑制できるという効果を有するものであり、主として移動体通信機器に用いられる面実装型の弾性表面波フィルタや弾性表面波デュプレクサなどの弾性表面波デバイス等において有用となるものである。   The surface acoustic wave device according to the present invention has an effect of suppressing frequency fluctuations during surface mounting, such as a surface mounting type surface acoustic wave filter or a surface acoustic wave duplexer mainly used in mobile communication devices. This is useful in a surface acoustic wave device or the like.

本発明の実施の形態１における弾性表面波デバイスの断面図Sectional drawing of the surface acoustic wave device in Embodiment 1 of this invention 同弾性表面波デバイスの製造工程を示す断面図Sectional drawing which shows the manufacturing process of the surface acoustic wave device 同弾性表面波デバイスの製造工程を示す断面図Sectional drawing which shows the manufacturing process of the surface acoustic wave device 同弾性表面波デバイスのビア電極のずらせ方向を示す模式図Schematic showing the direction of displacement of the via electrode of the surface acoustic wave device 本発明の実施の形態２における弾性表面波デバイスの断面図Sectional drawing of the surface acoustic wave device in Embodiment 2 of this invention 従来の弾性表面波デバイスの断面図Sectional view of a conventional surface acoustic wave device

符号の説明Explanation of symbols

１１ 圧電基板
１２ 櫛型電極
１３ パッド電極
１４ 樹脂壁
１５ 天板
１６ 外部電極
１７ ビア電極
１７ａ 第１のビア電極
１７ｂ 第２のビア電極
２３ 接続電極 DESCRIPTION OF SYMBOLS 11 Piezoelectric substrate 12 Comb electrode 13 Pad electrode 14 Resin wall 15 Top plate 16 External electrode 17 Via electrode 17a 1st via electrode 17b 2nd via electrode 23 Connection electrode

Claims (1)

圧電基板上に弾性表面波素子を構成する櫛型電極およびパッド電極を形成する工程と、前記圧電基板上において感光性樹脂を用いて露光・現像することにより、前記櫛型電極が形成された励振領域を囲み、前記パッド電極上に第１の貫通穴を有する樹脂壁を形成する工程と、前記樹脂壁の開口部を覆い前記励振領域を密閉するように前記樹脂壁の上面に金属箔をラミネートする工程と、前記励振領域を密閉する金属領域を残して前記金属箔をエッチングする工程と、前記金属箔をエッチングすることにより露出した前記樹脂壁の上面と前記金属領域の金属箔の上面に感光性樹脂を塗布し、露光・現像することにより、前記第１の貫通穴を露出させる第２の貫通穴を有し、前記金属領域の金属箔を露出させる樹脂層を形成する工程と、金属めっきを施すことによって、前記金属領域の金属箔の厚みを厚くすると同時に、前記第１の貫通穴と前記第２の貫通穴を充填するビア電極を形成する工程と、前記金属めっきを施した前記金属領域の上面を研磨して平坦化し、前記ビア電極に接続された外部電極を形成する工程とを備え、前記第２の貫通穴の中心位置と前記第１の貫通穴の中心位置を平面視において異ならせるとともに、前記第２の貫通穴は前記第１の貫通穴を平面視において包含するように設けたことを特徴とする、前記圧電基板と同等の占有面積を有する弾性表面波デバイスの製造方法。 A step of forming a comb electrode and a pad electrode constituting a surface acoustic wave element on a piezoelectric substrate, and an excitation in which the comb electrode is formed by exposure and development using a photosensitive resin on the piezoelectric substrate; Forming a resin wall having a first through hole on the pad electrode, and laminating a metal foil on an upper surface of the resin wall so as to cover the opening of the resin wall and seal the excitation region Etching the metal foil leaving a metal region that seals the excitation region, and exposing the top surface of the resin wall exposed by etching the metal foil and the top surface of the metal foil in the metal region. Forming a resin layer having a second through hole that exposes the first through hole and exposing the metal foil of the metal region by applying a photosensitive resin, exposing and developing, and Tsu Forming a via electrode that fills the first through hole and the second through hole at the same time as increasing the thickness of the metal foil in the metal region, and applying the metal plating to the metal And polishing and flattening the upper surface of the region to form an external electrode connected to the via electrode, and the center position of the second through hole and the center position of the first through hole in plan view A method of manufacturing a surface acoustic wave device having an occupied area equivalent to that of the piezoelectric substrate, wherein the second through hole includes the first through hole in a plan view. .
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