JP5124520B2 - 薄膜トランジスタ - Google Patents

薄膜トランジスタ Download PDF

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Publication number
JP5124520B2
JP5124520B2 JP2009092899A JP2009092899A JP5124520B2 JP 5124520 B2 JP5124520 B2 JP 5124520B2 JP 2009092899 A JP2009092899 A JP 2009092899A JP 2009092899 A JP2009092899 A JP 2009092899A JP 5124520 B2 JP5124520 B2 JP 5124520B2
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JP
Japan
Prior art keywords
polymer
semiconductor
semiconductor layer
insulating polymer
thin film
Prior art date
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JP2009092899A
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English (en)
Japanese (ja)
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JP2009260340A (ja
JP2009260340A5 (enExample
Inventor
ウー イリアン
パン フアロン
リウ ピン
リ ユニン
エフ． スミス ポール
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Xerox Corp
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Xerox Corp
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Publication date
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Publication of JP2009260340A publication Critical patent/JP2009260340A/ja
Publication of JP2009260340A5 publication Critical patent/JP2009260340A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/254—Polymeric or resinous material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/258—Alkali metal or alkaline earth metal or compound thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009092899A 2008-04-11 2009-04-07 薄膜トランジスタ Active JP5124520B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/101,945 2008-04-11
US12/101,945 US8049209B2 (en) 2008-04-11 2008-04-11 Thin-film transistors

Publications (3)

Publication Number Publication Date
JP2009260340A JP2009260340A (ja) 2009-11-05
JP2009260340A5 JP2009260340A5 (enExample) 2012-05-24
JP5124520B2 true JP5124520B2 (ja) 2013-01-23

Family

ID=40679333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009092899A Active JP5124520B2 (ja) 2008-04-11 2009-04-07 薄膜トランジスタ

Country Status (3)

Country Link
US (2) US8049209B2 (enExample)
EP (1) EP2109161B1 (enExample)
JP (1) JP5124520B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115200B2 (en) * 2007-12-13 2012-02-14 E.I. Du Pont De Nemours And Company Electroactive materials
US8212239B2 (en) * 2007-12-13 2012-07-03 E I Du Pont De Nemours And Company Electroactive materials
US8216753B2 (en) 2007-12-13 2012-07-10 E I Du Pont De Nemours And Company Electroactive materials
US8067764B2 (en) * 2007-12-17 2011-11-29 E. I. Du Pont De Nemours And Company Electroactive materials
US8461291B2 (en) * 2007-12-17 2013-06-11 E I Du Pont De Nemours And Company Organic electroactive materials and an organic electronic device having an electroactive layer utilizing the same material
US8304512B2 (en) * 2010-01-19 2012-11-06 Xerox Corporation Benzodithiophene based materials compositions
US8643001B2 (en) * 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition
US8742403B2 (en) 2011-03-08 2014-06-03 Samsung Electronics Co., Ltd. Xanthene based semiconductor compositions
WO2012156500A1 (en) * 2011-05-18 2012-11-22 Université Libre de Bruxelles Semiconducting compound for gas sensing
JP6342806B2 (ja) * 2011-09-28 2018-06-13 メルク パテント ゲーエムベーハー 共役ポリマー
US9881712B2 (en) * 2012-07-20 2018-01-30 Rohm And Haas Electronic Materials Llc Highly crystalline electrically conducting polymers, methods of manufacture thereof and articles comprising the same
KR20150099801A (ko) * 2012-12-18 2015-09-01 메르크 파텐트 게엠베하 축합 고리계를 갖는 방출체
CN103151461A (zh) 2013-02-27 2013-06-12 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法和制备装置
US10600964B2 (en) * 2013-12-17 2020-03-24 Rohm And Haas Electronic Materials Llc Highly crystalline electrically conducting organic materials, methods of manufacture thereof and articles comprising the same
WO2016046659A1 (en) 2014-09-25 2016-03-31 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
JP6562398B2 (ja) * 2015-03-19 2019-08-21 三菱ケミカル株式会社 半導体デバイス、太陽電池、太陽電池モジュール、及び組成物
CN108780844B (zh) * 2016-03-16 2022-04-29 富士胶片株式会社 有机半导体组合物、有机薄膜晶体管的制造方法及有机薄膜晶体管
US11005043B2 (en) * 2017-08-11 2021-05-11 Raynergy Tek Incorporation Organic semiconducting polymer
GB2569637A (en) * 2017-12-21 2019-06-26 Sumitomo Chemical Co Electronic device
CN116709790A (zh) * 2023-06-29 2023-09-05 南京邮电大学 一种有机场效应晶体管、制备方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030227014A1 (en) * 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
CN101747493B (zh) * 2003-10-28 2014-07-02 西巴特殊化学品控股有限公司 二酮基吡咯并吡咯聚合物
US7300861B2 (en) * 2004-06-24 2007-11-27 Palo Alto Research Center Incorporated Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer
US9150687B2 (en) * 2004-10-01 2015-10-06 Merck Patent Gmbh Electronic devices containing organic semi-conductors
KR101130404B1 (ko) * 2005-02-16 2012-03-27 삼성전자주식회사 고차가지형 고분자에 분산된 고유전율 절연체를 포함하는유기 절연체 조성물 및 이를 이용한 유기박막 트랜지스터
CN100443483C (zh) 2005-12-08 2008-12-17 中国科学院长春应用化学研究所 稠环单元封端的齐聚噻吩类高迁移率有机半导体材料及用途
JP5121355B2 (ja) * 2006-08-25 2013-01-16 住友化学株式会社 有機薄膜の製造方法

Also Published As

Publication number Publication date
JP2009260340A (ja) 2009-11-05
US8049209B2 (en) 2011-11-01
US20090256139A1 (en) 2009-10-15
US20120034736A1 (en) 2012-02-09
EP2109161A1 (en) 2009-10-14
EP2109161B1 (en) 2017-07-26
US8293363B2 (en) 2012-10-23

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